APPLIED PHYSICS LETTERS 101 , 139902 (2012)
Publisher’s Note: “Defect mechanisms in high resistivity
BaTiO
3
–Bi(Zn
1/2
Ti
1/2
)O
3 ceramics” [Appl. Phys. Lett. 101, 112904 (2012)]
Natthaphon Raengthon,
1
Victoria J. DeRose,
2
Geoffrey L. Brennecka,
3 and David P. Cann
1
Materials Science, School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State
1
University, Corvallis, Oregon 97331, USA
2
3
Department of Chemistry, University of Oregon, Eugene, Oregon 97403, USA
Sandia National Laboratories, Materials Science and Engineering Center, Albuquerque,
New Mexico 87185, USA
(Received 13 September 2012; published online 28 September 2012)
[ http://dx.doi.org/10.1063/1.4757256
]
ð V
00
Ba
This article was originally published online on 13 September with the defect associate appearing incorrectly in two lines
V ••
O
Þ
0 instead of ð V
00
Ba
V •
O
Þ
0
. AIP apologizes for this error. The article was correct as it appeared in the printed version of the journal. All online versions of the article were corrected on 14 September 2012.
0003-6951/2012/101(13)/139902/1/$30.00
101 , 139902-1 2012 American Institute of Physics
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