Supplementary Information
Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced
Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an
Oxidant
Ya Hu,1 Kui-Qing Peng,1* Lin Liu,1 Zhen Qiao,1 Xing Huang,2 Xiao-Ling Wu,1 Xiang-Min
Meng,2 Shuit-Tong Lee3*
Beijing Key Laboratory of Energy Conversion and Storage Materials and Department
of Physics, Beijing Normal University, Beijing, China, 2Technical Institute of Physics
and Chemistry, Chinese Academy of Sciences, Beijing, China,3Jiangsu Key Laboratory
of Carbon-based Functional Materials and Devices & Institute of Functional Nano and
Soft Materials (FUNSOM), Soochow University, Suzhou, China
1
Supplementary Figures
Figure S1. Typical SEM image of porous silicon layer produced on Si substrate in
the absence of noble metal catalysts.
Figure S2. High-resolution TEM image of a mesoporous Si nanowire produced
from a p-type 0.001-0.008 Ω·cm Si(100) wafer.
Figure S3. SEM image of ordered silicon nanohole array produced on a p-type 110 Ω·cm Si(100) wafer.
Figure S4. SEM image of AgNPs-induced shallow pits on the surface of a p-type
1-10 Ω · cm Si(100) wafer after 3-hours immersion in aqueous HF solution.
Graphite or noble metal board was not used.