CA2-38
Optical proprieties of silicon nanowires made by metal assisted
chemical etching method: effect of H2O2 concentration and
etching time
A. Daami Ben Aicha*, A. Ben Jaballah, B. Moumni, M. Khardani, W. Dimassi,
H. Ezzaouia
*
Laboratory of Photovoltaic, Research and Technology Centre of Energy, Borj
Cedria Technopark, BP. 95, Hammam-Lif 2050, Tunisia
In this work ,we have investigated the silicon nanowires arrays
(SiNWs) which are fabricated on both sides of solar grade silicon
(SiGS) through tow-step silver assisted electro less etching method in
an etching solution composed of HF and H2O2.by controlling the
hydrogen peroxide concentration in the etching solution and reaction
time two different morphologies and surface characters are obtained:
porous silicon for low concentration (1%) and SiNWs for greater
H2O2 concentration, SEM image show that the length of SiNWs
increase with increasing of reaction time and H2O2 concentration. The
U.V.Visible exhibits an excellent antireflection character of the
SiNWs arrays with an overall reflex ion of 3% in the range of 300 to
1000 nm.
Keywords: Silicon nanowires, chemical etching method, SEM,
U.V.Visible.
Matériaux 2015