o to turn OFF the device, VGS < -VP
n-channel Depletion mode MOSFET
o VGS > +VP, to turn OFF the device
p-channel Depletion mode MOSFET
•
For conduction VGS > +VT(threshold voltage)
n-channel Enhancement mode MOSFET
Voltage difference (across the insulation layer) at the drain end = VGS -VDS
When VDS increased from 0V, and when reach VDS = VDSsat , VT = VGS -VDSsat , device operate in current
saturation
VDSsat = VGS - VT
•
For conduction VGS < -VT(threshold voltage)
p-channel Enhancement mode MOSFET
n-channel Enhancement mode MOSFET