Molybdenum disulfide is the inorganic compound composed of only two elements: molybdenum and sulfur.
Tin dioxide
Tin (IV) oxide, also known by the systematic name stannic oxide in the older notation, is the inorganic compound with the formula SnO2.
Lead telluride
Lead telluride is a compound of lead and tellurium (PbTe).
Semiconductor
Semiconductors are crystalline or amorphous solids with distinct electrical characteristics.
Solid-state electronics
Solid-state electronics are those circuits or devices built entirely from solid materials and in which the electrons, or other charge carriers, are confined entirely within the solid material.
Zinc oxide
Zinc oxide is an inorganic compound with the formula ZnO.
Aluminium arsenide
Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
Aluminium phosphide
Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.
Bismuth telluride
Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride.
Cadmium oxide
Cadmium oxide is an inorganic compound with the formula CdO.
Gallium antimonide
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.
Silicon carbide
Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a compound of silicon and carbon with chemical formula SiC.
Zinc sulfide
Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS.
Beryllium telluride
Beryllium telluride (BeTe) is a chemical compound of beryllium and tellurium.
Cadmium selenide
Cadmium selenide is an inorganic compound with the formula CdSe.
Gallium phosphide
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.
Indium arsenide
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.
Indium nitride
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
Indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
Zinc telluride
Zinc telluride is a binary chemical compound with the formula ZnTe.
Aluminium nitride
Aluminium nitride (AlN) is a nitride of aluminium.
Gallium arsenide
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Mercury sulfide
Mercury sulfide, mercuric sulfide, mercury sulphide, or mercury(II) sulfide is a chemical compound composed of the chemical elements mercury and sulfur.
Boron phosphide
Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.
Cadmium sulfide
Cadmium sulfide is the inorganic compound with the formula CdS.
Cadmium telluride
Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium.
Electron mobility
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.
Gallium nitride
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.
Lead(IV) sulfide
Lead(IV) sulfide is a chemical compound with the formula PbS2.
Lead(II) sulfide
Lead(II) sulfide (also spelled sulphide) is an inorganic compound with the formula PbS.
Mercury selenide
Mercury selenide (HgSe) is a chemical compound of mercury and selenium.
Copper indium gallium selenide
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium.
Mercury telluride
Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium.
Zinc selenide
Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se).
Tin telluride
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.
Indium antimonide
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).
Isobutylgermane
Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3), is an organogermanium compound.
Photoelectrochemical process
Photoelectrochemical processes are processes in photoelectrochemistry; they usually involve transforming light into other forms of energy.
Bismuth antimonide
Bismuth antimonides, Bismuth-antimonys, or Bismuth-antimony alloys, (Bi1-xSbx) are binary alloys of bismuth and antimony in various ratios.
Molybdenum disulfide is the inorganic compound composed of only two elements: molybdenum and sulfur.
Tin dioxide
Tin (IV) oxide, also known by the systematic name stannic oxide in the older notation, is the inorganic compound with the formula SnO2.
Lead telluride
Lead telluride is a compound of lead and tellurium (PbTe).
Semiconductor
Semiconductors are crystalline or amorphous solids with distinct electrical characteristics.
Solid-state electronics
Solid-state electronics are those circuits or devices built entirely from solid materials and in which the electrons, or other charge carriers, are confined entirely within the solid material.
Zinc oxide
Zinc oxide is an inorganic compound with the formula ZnO.
Aluminium arsenide
Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
Aluminium phosphide
Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.
Bismuth telluride
Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride.
Cadmium oxide
Cadmium oxide is an inorganic compound with the formula CdO.
Gallium antimonide
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.
Silicon carbide
Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a compound of silicon and carbon with chemical formula SiC.
Zinc sulfide
Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS.
Beryllium telluride
Beryllium telluride (BeTe) is a chemical compound of beryllium and tellurium.
Cadmium selenide
Cadmium selenide is an inorganic compound with the formula CdSe.
Gallium phosphide
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.
Indium arsenide
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.
Indium nitride
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
Indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
Zinc telluride
Zinc telluride is a binary chemical compound with the formula ZnTe.
Aluminium nitride
Aluminium nitride (AlN) is a nitride of aluminium.
Gallium arsenide
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Mercury sulfide
Mercury sulfide, mercuric sulfide, mercury sulphide, or mercury(II) sulfide is a chemical compound composed of the chemical elements mercury and sulfur.
Boron phosphide
Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.
Cadmium sulfide
Cadmium sulfide is the inorganic compound with the formula CdS.
Cadmium telluride
Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium.
Electron mobility
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.
Gallium nitride
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.
Lead(IV) sulfide
Lead(IV) sulfide is a chemical compound with the formula PbS2.
Lead(II) sulfide
Lead(II) sulfide (also spelled sulphide) is an inorganic compound with the formula PbS.
Mercury selenide
Mercury selenide (HgSe) is a chemical compound of mercury and selenium.
Copper indium gallium selenide
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium.
Mercury telluride
Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium.
Zinc selenide
Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se).
Tin telluride
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.
Indium antimonide
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).
Isobutylgermane
Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3), is an organogermanium compound.
Photoelectrochemical process
Photoelectrochemical processes are processes in photoelectrochemistry; they usually involve transforming light into other forms of energy.
Bismuth antimonide
Bismuth antimonides, Bismuth-antimonys, or Bismuth-antimony alloys, (Bi1-xSbx) are binary alloys of bismuth and antimony in various ratios.
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