Semiconductors

2017-07-27T22:30:06+03:00[Europe/Moscow] en true Molybdenum disulfide, Tin dioxide, Lead telluride, Semiconductor, Solid-state electronics, Zinc oxide, Aluminium arsenide, Aluminium phosphide, Bismuth telluride, Cadmium oxide, Gallium antimonide, Silicon carbide, Zinc sulfide, Beryllium telluride, Cadmium selenide, Gallium phosphide, Indium arsenide, Indium nitride, Indium phosphide, Zinc telluride, Aluminium nitride, Gallium arsenide, Mercury sulfide, Boron phosphide, Cadmium sulfide, Cadmium telluride, Electron mobility, Gallium nitride, Lead(IV) sulfide, Lead(II) sulfide, Mercury selenide, Copper indium gallium selenide, Mercury telluride, Zinc selenide, Tin telluride, Indium antimonide, Isobutylgermane, Photoelectrochemical process, Bismuth antimonide flashcards Semiconductors
Click to flip
  • Molybdenum disulfide
    Molybdenum disulfide is the inorganic compound composed of only two elements: molybdenum and sulfur.
  • Tin dioxide
    Tin (IV) oxide, also known by the systematic name stannic oxide in the older notation, is the inorganic compound with the formula SnO2.
  • Lead telluride
    Lead telluride is a compound of lead and tellurium (PbTe).
  • Semiconductor
    Semiconductors are crystalline or amorphous solids with distinct electrical characteristics.
  • Solid-state electronics
    Solid-state electronics are those circuits or devices built entirely from solid materials and in which the electrons, or other charge carriers, are confined entirely within the solid material.
  • Zinc oxide
    Zinc oxide is an inorganic compound with the formula ZnO.
  • Aluminium arsenide
    Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
  • Aluminium phosphide
    Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.
  • Bismuth telluride
    Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride.
  • Cadmium oxide
    Cadmium oxide is an inorganic compound with the formula CdO.
  • Gallium antimonide
    Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.
  • Silicon carbide
    Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a compound of silicon and carbon with chemical formula SiC.
  • Zinc sulfide
    Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS.
  • Beryllium telluride
    Beryllium telluride (BeTe) is a chemical compound of beryllium and tellurium.
  • Cadmium selenide
    Cadmium selenide is an inorganic compound with the formula CdSe.
  • Gallium phosphide
    Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.
  • Indium arsenide
    Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.
  • Indium nitride
    Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
  • Indium phosphide
    Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
  • Zinc telluride
    Zinc telluride is a binary chemical compound with the formula ZnTe.
  • Aluminium nitride
    Aluminium nitride (AlN) is a nitride of aluminium.
  • Gallium arsenide
    Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
  • Mercury sulfide
    Mercury sulfide, mercuric sulfide, mercury sulphide, or mercury(II) sulfide is a chemical compound composed of the chemical elements mercury and sulfur.
  • Boron phosphide
    Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.
  • Cadmium sulfide
    Cadmium sulfide is the inorganic compound with the formula CdS.
  • Cadmium telluride
    Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium.
  • Electron mobility
    In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.
  • Gallium nitride
    Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.
  • Lead(IV) sulfide
    Lead(IV) sulfide is a chemical compound with the formula PbS2.
  • Lead(II) sulfide
    Lead(II) sulfide (also spelled sulphide) is an inorganic compound with the formula PbS.
  • Mercury selenide
    Mercury selenide (HgSe) is a chemical compound of mercury and selenium.
  • Copper indium gallium selenide
    Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium.
  • Mercury telluride
    Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium.
  • Zinc selenide
    Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se).
  • Tin telluride
    Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.
  • Indium antimonide
    Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).
  • Isobutylgermane
    Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3), is an organogermanium compound.
  • Photoelectrochemical process
    Photoelectrochemical processes are processes in photoelectrochemistry; they usually involve transforming light into other forms of energy.
  • Bismuth antimonide
    Bismuth antimonides, Bismuth-antimonys, or Bismuth-antimony alloys, (Bi1-xSbx) are binary alloys of bismuth and antimony in various ratios.