Flashcards: Semiconductors

Molybdenum disulfide is the inorganic compound composed of only two elements: molybdenum and sulfur.

Tin (IV) oxide, also known by the systematic name stannic oxide in the older notation, is the inorganic compound with the formula SnO2.

Lead telluride is a compound of lead and tellurium (PbTe).

Semiconductors are crystalline or amorphous solids with distinct electrical characteristics.

Solid-state electronics are those circuits or devices built entirely from solid materials and in which the electrons, or other charge carriers, are confined entirely within the solid material.

Zinc oxide is an inorganic compound with the formula ZnO.

Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.

Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.

Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride.

Cadmium oxide is an inorganic compound with the formula CdO.

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.

Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a compound of silicon and carbon with chemical formula SiC.

Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS.

Beryllium telluride (BeTe) is a chemical compound of beryllium and tellurium.

Cadmium selenide is an inorganic compound with the formula CdSe.

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.

Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

Zinc telluride is a binary chemical compound with the formula ZnTe.

Aluminium nitride (AlN) is a nitride of aluminium.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Mercury sulfide, mercuric sulfide, mercury sulphide, or mercury(II) sulfide is a chemical compound composed of the chemical elements mercury and sulfur.

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.

Cadmium sulfide is the inorganic compound with the formula CdS.

Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium.

In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.

Lead(IV) sulfide is a chemical compound with the formula PbS2.

Lead(II) sulfide (also spelled sulphide) is an inorganic compound with the formula PbS.

Mercury selenide (HgSe) is a chemical compound of mercury and selenium.

Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium.

Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium.

Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se).

Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).

Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3), is an organogermanium compound.

Photoelectrochemical processes are processes in photoelectrochemistry; they usually involve transforming light into other forms of energy.

Bismuth antimonides, Bismuth-antimonys, or Bismuth-antimony alloys, (Bi1-xSbx) are binary alloys of bismuth and antimony in various ratios.