MICROELECTRONICS ENGINEERING GROUP Contact: Assoc. Prof. Yasar Gurbuz Faculty of Engineering & Natural Sciences Sabanci University Orhanli, 34956 Tuzla, Istanbul, Turkey Tel: +90 216- 483 9533, Fax: +90 216- 483 9550 e-mail: yasar@sabanciuniv.edu MAJOR AREAS OF RESEARCH Microelectromechanical Systems (MEMS): Modeling, simulation and fabrication of silicon micromachined mechanical systems; pressure, acceleration sensors, ultrasonic transducers, RF-MEMS; resonators, oscillators, filters. Integrated Circuits and VLSI Design and Technology: RF/Analog/Digital/Mixed Signal ICs, SoC ASIC Design, Hardware realization of dedicated DSP architectures, High Speed A/D, D/A Converters, Modeling and Simulation of Semiconductor Devices. Photonics and Optoelectronics: High Speed ElectroOptic Modulators, Chip-scale Photonic ICs, Wavelength Division Multiplexing (WDM) Fiber Optic Network Components, Quantum Dots, Quantum Cyptography, Optical Thin Film Coating and Fiber Optic Sensors. MICROELECTRONICS GROUP Ayhan BOZKURT E-mail : abozkurt@sabanciuniv.edu Phone : +90 216 483 9537 Fax : +90 216 483 9550 Education •PhD. in Electrical and Electronics Eng., Bilkent University, Ankara, Turkey,1994-2000 •MSc. in Electrical and Electronics Eng., Bilkent University, Ankara, Turkey,1992-1994 •BSc. in Electrical and Electronics Eng., Bilkent University, Ankara, Turkey,1987-1992 Research Interest • Acoustic Non-destructive Evaluation (NDE) • Modeling and Fabrication of Microelectromechanical Systems (MEMS) • Transducer Design for Ultrasonic Imaging • IC Design for Sensor Interfaces • Low-level Microprocessor/DSP Programming MICROELECTRONICS GROUP Cem ÖZTÜRK E-mail : cemozturk@sabanciuniv.edu Phone : +90 216 483 9593 Fax : +90 216 483 9550 Education •PhD, Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA, 2002 •MSc, Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA, 1997 •BSc, Electrical and Electronics Engineering, Bogazici University, Istanbul, Turkey, 1995 Work Experience •Sabanci University, Faculty of Engineering & Natural Sciences, Microelectronics Group (Sep 2003present) •Assistant Research Engineer, Electrical and Computer Engineering Dept., University of California, Santa Barbara, CA, USA (Mar 2002- Aug 2003) •Research Assistant, Electrical and Computer Engineering Dept., University of California, Santa Barbara, CA, USA (Sep 1995- Mar 2002) Research Interests •Photonics, Chip-scale Photonic Integrated Circuits, Optoelectronic filters and add/drop Mux/DeMux, WDM Fiber Optic Networks and Components, Ultra-high speed electrooptic and quantum well modulators, Semiconductor and hybrid integrated processing technologies. MICROELECTRONICS GROUP İlker HAMZAOĞLU E-mail : hamzaoglu@sabanciuniv.edu Phone : +90 216 483 9577 Fax : +90 216 483 9550 Education •PhD, Computer Science, University of Illinois at Urbana-Champaign, IL, USA, 1999 •MSc, Computer Engineering, Bogazici University, Istanbul, Turkey, 1993 •BSc, Computer Engineering, Bogazici University, Istanbul, Turkey, 1991 Work Experience •Faculty Member, Sabanci University, Faculty of Engineering & Natural Sciences, Microelectronics Group (Sep 2003-present) •Principle Staff Engineer (Dec 2002- Aug 2003), Senior Staff Engineer (Aug 1999- Dec 2002), Multimedia Architecture Lab, Motorola Labs, Schaumburg, IL, USA •Visiting Lecturer, Computer Science Dept., University of Illinois at Urbana-Champaign, IL, USA (Summer 1998, Summer 1999) •Teaching and Research Assistant, Computer Science Dept. and Electrical and Computer Engineering Dept., University of Illinois at Urbana-Champaign, IL, USA (Jan 1994- July 1999) Research Interests Embedded Systems (Hw/Sw) Design, Digital SoC ASIC Design, Computer-aided Design, Verification and Testing for Digital SoC ASICs, Embedded Microprocessor Architectures, Parallel Processing. MICROELECTRONICS GROUP Meriç ÖZCAN E-mail : meric@sabanciuniv.edu Phone : +90 216 483 9506 Fax : +90 216 483 9550 Education •PhD, Electrical Engineering, Stanford University, Stanford, CA, USA, 1991 •MSc, Electrical Engineering, Stanford University, Stanford, CA, USA, 1986 •BSc, Electrical Engineering, Middle East Technical University, Ankara, Turkey, 1984 Work Experience •Sabanci University, Faculty of Engineering & Natural Sciences, Microelectronics Group (02-present) •K2 Optronics Inc., Director of Advanced Research, Sunnyvale, CA, (00-01) •NASA Ames Research Center, Research Scientist, Moffett Field, CA (91-00) •Stanford University, Research Assistant, Stanford, CA (84-91) Research Interests •Analog and Digital Electronic Design, High Frequency Electronic Design, Optoelectronics, Fiber Optic Communication, Quantum Electronics, Quantum Computing, Quantum Cryptography. MICROELECTRONICS GROUP Yasar GÜRBÜZ E-mail : yasar@sabanciuniv.edu Phone : +90 216 483 9533 Fax : +90 216 483 9550 Education •1997 Ph. D., Electrical Engineering, Vanderbilt University, Nashville, TN •1993 MSc, Electrical Engineering, Vanderbilt University, Nashville, TN •1990 BSc, Electronics Engineering, Erciyes University, Kayseri - Turkey Work Experience •2000- Faculty Member, Sabanci University, FENS •1999-2000 Project Manager, Aselsan Inc., MGEO, Ankara •1997-1999 Senior Research Associate, Vanderbilt University •1991-1997 Research / Teaching Assistant, Vanderbilt University Research Interests •Microelectromechanical Systems (MEMS) •Analog and RF Integrated Circuits •Solid-State Sensors •Microelectronics Devices •Semiconductor Technology Memberships:IEEE Solid-State Circuits Society, SPIE MICROELECTRONICS GROUP Chem/Bio Pressure Light Thermal Electrical etc. LAB CAPABILITIES Idea Design/Simulation Mask Making (outsourcing) Etching (wet/dry) Patterning Wire Bonding Packaging Deposition/Sputter Testing (Atmospheric Pressure) Sensors & Transducers Testing (Sub-Atmospheric Environment) MICROELECTRONICS GROUP Vacuumed Cavity Cleaned Silicon Substrate Design and Simulation Lab Software: Hardware: •SUN Workstations • Europractice • 3x ULTRA-10 (1 GByte RAM) • Cadence / Synopsys • 4x ULTRA-5 (512 MByte RAM) • HSpice, Saber •24x HP Pentium IV PCs MICROELECTRONICS GROUP • MemsCap, MemCad, Ansys Class 1000 Clean Room MASK ALIGNER Specs •Exposure Optics UV: 300nm •Automated delivery system •Variable Dose •Separate View Aligners Capability •1um resolution MISC. FACILITIES SPUTTER •Microscope •Ultrasonic Cleaner •Balance •Hot Plate Stirrer •Small Capacity Furnace, 3 zone (1200oC) Specs.: •Vacuum: 10-7 Torr •Temperature 350oC •RF Power (600W) , DC Power (500W) •20 – 100kHz variable frequency pulse •3 Gas inputs •Load Lock Chamber •Computer Controlled Deposition Capability: •Metals •Oxides •Reactive coating •oxides & nitrides WET BENCH •Class 100 Hood •Hot plate •Spinner •Ultrasonic Cleaner •Etch Basin •DI Water & dry air MICROELECTRONICS GROUP RIE Specs: ICP, 1500W, 13.56MHz •RIE, 600W •4 Gas Lines •0.05-0.5mbar •End Point Detector Etch Capabilities: Oxide •Nitride •Semiconductor (Si. GaAs etc…) •Metals Test and Measurement Lab • IC Probe Station • Surface Profiler • Logic Analysis System • Semiconductor Parameter Analyzer • 500 MHz Infiniium Oscilloscope • 1 GHz Infiniium Oscilloscope • Spectrum Analyzer • Impedance Analyzer • RF Signal Generator • Sampling Oscilloscope • Arbitrary Waveform Generator • Pulse Generator MICROELECTRONICS GROUP SPONSORED RESEARCH EXAMPLES and WORKING ENVIRONMENT •TARGET, EU-6th Frame Work Project (2004-2008) (http://www.target-net.org): European research in the field of microwave power amplifiers for broadband wireless access (including RF-semiconductor technology, RF-IC, RF-MEMS, RF system architectures) • RF-MEMS for wireless appications: •MINAEAST-NET, EU-6th Frame Work Project Project Resonators, Filters and Oscillators (2004-2006), http://www.minaeast.net involving micro and nanotechnologies. •MEMS-Based Chemical Sensors and Interface Electronics (Mixed-Signal IC) (TUBITAK, 2001-2004) •High-Voltage Front-End IC Design CMUT (TUBITAK, 2003-2005) Sensor Read-out CDR PLL • High-Voltage Front-End IC Design CMUT •MEMS-Based Chemical Sensors DC-DC Conv. Sensor Read-out IC & MEMS Design and simulation lab. Class-1000 Clean Room Test and Characterization (RF/microwave, small/large power and optical) IEEE 802.11a-b: - Bit rate: 110 and 220Mb/s - Power consumption: 100mW and 250mW - Bandwidth ≥ 500MHz - Number of channels: 5 -Total signal power: +20dBm -- Adjacent channel power ratio, (ACPR) better than 30dBc at 500MHz bandwidth -PAE PA unit: better than 40% -Reference PLL from 3.35GHz to 10.35GHz, step 250MHz - MEMS based pass-band filter: 3.1-10.6GHz, roll-off selectivity 20dB/500MHz. Important semiconductors MOSFET structure Source Group IV materials III-V compounds Drain elements: C (diamond), Si, Ge compound: SiC solid solution: SixGe1-x, x = 0 … 1 GaAs, AlAs, InP, … low gap: InAs, InSb wide gap: GaN, AlN solid solutions: GaxAl1-xAs, … Gate Source n+ II-VI compounds Gate ZnSe, CdTe wide gap: ZnS, MgS solid solutions: ZnxMg1-xSySe1-y, … Drain n+ cap Barrier cap L Barrier / buffer High Electron Mobility Transistor Substrate Channel layer 2DEG channel E B C B C HeterostructureBipolarTransistor RF Devices E MOSFET structure Source Gate B Gate Source Drain n+ cap L B Drain n+ cap Barrier C C Barrier / buffer High Electron Mobility Transistor Substrate Channel layer 2DEG channel HeterostructureBipolarTransistor RF ICs PLL / VCO Power Amplifer LNA Mixer TRx – RF System MICROELECTRONICS GROUP RF MEMS for TRx Resonators VC-Capacitors Filters Switches Inductors MICROELECTRONICS GROUP RF Integrated Circuits and MEMS for TRx PLL / VCO Power Amplifer Mixer LNA MICROELECTRONICS GROUP Micro and Nanotechnologies going Eastern Europe through Networking INCO-CT-2004-510470 Project Objectives MINAEAST-NET is intended to be a tool for achieving a better integration of eight ACCs (Romania, Hungary, Poland, Slovenia, Slovakia, Lithuania, Bulgaria and Turkey), in projects for FP6 on Micro and Nano Technologies. •MINAEAST-NET will be established as the premier source of information about resources and results in MNT from ACCs and about the strong points of the ACC organisations. •Organisations and companies from MS (and world-wide) that are looking for partners in MNT for any kind of projects, should address their needs to MINAEAST-NET and MINAEAST-NET will definitely find the best partner suited for them. Acad. Dan Dascalu, Project coordinator Email: dascalu@imt.ro www.imt.ro •For all MNT interested organisations from ACC, MINAEAST-NET will be the main source of MNT specific project and partnership information: MNT related information about EC calls, international networking activities, partnership search from abroad. Turkey contact point: •MINAEAST-NET will support interaction between ACC and MS organisations to initiate FP6 proposals through organising meetings, workshops and support travel cost. Yasar Gurbuz, Sabanci University www.sabanciuniv.edu Email: yasar@sabanciuniv.edu •MINAEAST-NET will also be the little helper with any questions concerning proposal set-up and regulations for ACC organisations all that especially for MNT. Micromachined Chemical Gas Sensor and Signal ReadOut Integrated Circuitry Material characterisation Electrical characterisation Micromachined Gas Sensor Sensor Read-out IC Back-side etched Sensors Close-up view Sensors MEMS for Ultrasonic Imaging Capacitive Micromachined Ultrasonic Transducer (CMUT) Annular Array used in IVUS Imaging Ultrasound Generation Echo Detection MICROELECTRONICS GROUP MEMS for Ultrasonic Imaging High-Voltage Front-End IC Design CMUT MICROELECTRONICS GROUP Pending Projects • Micro and NanoTechnologies for Automotive Applications - EU 6th FrameWork • Sensors / MEMS and IC / VLSI Systems • Protein microchip design; cardiovascular risk assessment platform – DPT / TÜBİTAK MICROELECTRONICS GROUP Ultra Wide Band (UWB) Wall Penetrating Radar • Ultra wideband technology has its origins in the development of time domain (impulse response) techniques for the characterization of linear, time invariant microwave structures. • A short pulse in time has a large bandwidth in frequency domain hence it is called ultra wide band waveform. • UWB radar also uses radiated and reflected electromagnetic waves to detect, locate and identify targets. • The advantage of using UWB waveforms for radar include better spatial resolution, detectable materials penetration, easier target information recovery from reflected signals and lower probability of interference than with the narrowband signals. • Here we are developing a hand held behind the wall moving object/persons detector for intelligence and surveillance. Same system can also be used for people detection under the ruins after an earthquake for example…. MICROELECTRONICS GROUP Ultra Wide Band (UWB) Wall Penetrating Radar Block Diagram of the system currently under development: Transmitter Code Generator Pulse Generator I Programmable Time Delay Adjustable Delay Clock Oscillator Pulse Generator II Pulse length <1ns Energy concentrated in 2-6GHz band Average Power < 10uW Receiver Correlator Baseband Signal Processing S/H MICROELECTRONICS GROUP Integrator Multiplier Hybrid Tunable Wavelength Division Multiplexed (WDM) Filter Cladding Core Polymer Cladding 1500 0 -2 1505 1510 1515 TE -4 -6 -8 -10 -12 -14 -16 Vr = 5 V No bias -18 1520 Fiber to fiber insertion loss (dB) GaAs Epi Fiber to fiber insertion loss (dB) (MOST Research Center funded by DARPA @ UCSB) 1500 0 1505 1510 1520 -2 -4 -6 -8 -10 -12 No Bias Vf=2.1 V If=20 mA -14 -16 Vf=1.5 V If=14 mA -18 Wavelength (nm) 1515 TE W avelength (nm) Gold •Low loss and low cost due to fiber matched Polymer waveguide, fast tuning through GaAs electrooptic effect (nanosec.s) p-contact PMGI BCB GaAs p-GaAs GaAs n-GaAs PDBCB n-contact PMGI BCB •Fast thermoelectric control (microsec.s) GaAs transfer substrate MICROELECTRONICS GROUP •Arbitrary filter spectra and multiwavelength operatiom easily achiavable. Gold InP-and GaAs-based Optical Microresonator Devices (CSWDM Research Center funded by DARPA @ UCSB) GaAs Microdisc Active WG Structure 1.9 m 2265 A 0.1 m p-InGaAs 0.8 m p-InP 1 m p-InP 500 A nid InP 500 A p-InP 500 A nid InP 250 A 1.226Q 1015 A QW BCB PMGI Passive WG Structure 0.1 m p-InGaAs 0.8 m p-InP 1 m p-InP PDBCB BCB 1.9 m 500 A nid InP 100 A nid InP 3500 A 1.4Q 1.8 m n-InP Common WG Core 1 Transmission 0.95 m=124 1 0.9 m=122 0.95 0.85 0.9 0.8 0.85 m=123 0.8 0.75 MICROELECTRONICS GROUP 0.75 1535.5 0.7 1500 1536 1536.5 1510 1537 1537.5 1520 1538 1538.5 1530 Wavelength (nm) 1540 1550 1560 Digital SoC ASIC Examples Personal Digital Assistants (Application Processors and Hardware Accelerators) Digital Cameras/Camcorders (Image/Video Processing/Compression Systems) Cellular Phones (Baseband Processors, Application Processors and Hardware Accelerators) Entertainment Devices (Game Station (Graphics Processors), MP3 Player (Audio Processors), Set-Top Box (Video Processing, Security)) Storage Devices (Hard Disk Controllers, RAID Controllers) Biometric Devices (Image Processing, Cryptography) Networking Devices (Switches, Routers) Automobiles (Engine Control, Lane Departure Warning Systems) MICROELECTRONICS GROUP H.264 / MPEG4 Part 10 Video Compression Standard • The latest video compression standard • Performs 50% better than the next best standard • Standardized by both ISO and ITU • Targets a broad range of applications, e.g. wireless video, digital TV, video-on-demand, DVD The improved quality of H.264 requires intense computational power making it a very exciting challenge for real-time implementation ! MICROELECTRONICS GROUP H.264 / MPEG4 Part 10 Encoder Current Frame (Fn) Reference Frame(s)(F'n-1) Reconstructed Frame (F'n) Transform Quant Inverse Transform Inverse Quant CAVLC Motion Estimation Mode Decision Intra Prediction Deblocking Filter • Designed and Implemented Modules • Forward Transform and Quant, Inverse Transform and Quant, CAVLC • Module Implementations in Progress • Motion Estimation, Intra Prediction, Deblocking Filter, Mode Decision MICROELECTRONICS GROUP Arm Processor and Xilinx FPGA based Prototype Platform Xilinx FPGA Board Xilinx Virtex II FPGA Arm Processor Motherboard MICROELECTRONICS GROUP