Lecture 24 Dynamic Logic Mar. 10, 2003 Modern VLSI Design 3e: Chapters 3 & 5 week10-1 Partly from 2002 Prentice Hall PTR Topics Pseudo-nMOS gates. DCVS logic. Domino gates. Modern VLSI Design 3e: Chapters 3 & 5 week10-2 Partly from 2002 Prentice Hall PTR Pseudo-nMOS Uses a p-type as a resistive pullup, n-type network for pulldowns. Modern VLSI Design 3e: Chapters 3 & 5 week10-3 Partly from 2002 Prentice Hall PTR Characteristics Consumes static power. Has much smaller pullup network than static gate. Pulldown time is longer because pullup is fighting. Modern VLSI Design 3e: Chapters 3 & 5 week10-4 Partly from 2002 Prentice Hall PTR Output voltages Logic 1 output is always at VDD. Logic 0 output is above Vss. VOL = 0.25 (VDD - VSS) is one plausible choice. Modern VLSI Design 3e: Chapters 3 & 5 week10-5 Partly from 2002 Prentice Hall PTR Producing output voltages For logic 0 output, pullup and pulldown form a voltage divider. Must choose n, p transistor sizes to create effective resistances of the required ratio. Effective resistance of pulldown network must be comptued in worst case—series ntypes means larger transistors. Modern VLSI Design 3e: Chapters 3 & 5 week10-6 Partly from 2002 Prentice Hall PTR Transistor ratio calculation In steady state logic 0 output: – pullup is in linear region,Vds = Vout - (VDD VSS) ; – pulldown is in saturation. Pullup and pulldown have same current flowing through them. Modern VLSI Design 3e: Chapters 3 & 5 week10-7 Partly from 2002 Prentice Hall PTR Transistor ratio, cont’d. Equate two currents: – Idp = Idd. Using 0.5 mm parameters, 3.3V power supply: – Wp/Lp / Wn/Ln = 3.9. Modern VLSI Design 3e: Chapters 3 & 5 week10-8 Partly from 2002 Prentice Hall PTR DCVS logic DCVSL = differential cascode voltage logic. Static logic—consumes no dynamic power. Uses latch to compute output quickly. Requires true/complement inputs, produces true/complement outputs. Modern VLSI Design 3e: Chapters 3 & 5 week10-9 Partly from 2002 Prentice Hall PTR DCVS structure Modern VLSI Design 3e: Chapters 3 & 5 week10-10 Partly from 2002 Prentice Hall PTR DCVS operation Exactly one of true/complement pulldown networks will complete a path to the power supply. Pulldown network will lower output voltage, turning on other p-type, which also turns off p-type for node which is going down. Modern VLSI Design 3e: Chapters 3 & 5 week10-11 Partly from 2002 Prentice Hall PTR DCVS example Modern VLSI Design 3e: Chapters 3 & 5 week10-12 Partly from 2002 Prentice Hall PTR Precharged logic Precharged logic uses stored charge to help evaluation. Precharge node, selectively discharge it. Take advantage of higher speed of n-types. Requires multiple phases for evaluation. Modern VLSI Design 3e: Chapters 3 & 5 week10-13 Partly from 2002 Prentice Hall PTR Domino logic Uses precharge clock to compute output in two phases: – precharge; – evaluate. Is not a complete logic family—cannot invert. Modern VLSI Design 3e: Chapters 3 & 5 week10-14 Partly from 2002 Prentice Hall PTR Domino gate structure Modern VLSI Design 3e: Chapters 3 & 5 week10-15 Partly from 2002 Prentice Hall PTR Domino phases Controlled by clock . Precharge: p-type pullup precharges the storage node; inverter ensures that output goes low. Evaluate: storage node may be pulled down, so output goes up. Modern VLSI Design 3e: Chapters 3 & 5 week10-16 Partly from 2002 Prentice Hall PTR Domino buffer Output inverter is needed for two reasons: – make sure that outputs start low, go high so that domino output can be connected to another domino gate; – protects storage node from outside influence. Modern VLSI Design 3e: Chapters 3 & 5 week10-17 Partly from 2002 Prentice Hall PTR Domino operation Modern VLSI Design 3e: Chapters 3 & 5 week10-18 Partly from 2002 Prentice Hall PTR Domino effect Gate outputs fall in sequence: gate 1 Modern VLSI Design 3e: Chapters 3 & 5 gate 2 week10-19 gate 3 Partly from 2002 Prentice Hall PTR Monotonicity Domino gates inputs must be monotonically increasing: glitch causes storage node to discharge. Modern VLSI Design 3e: Chapters 3 & 5 week10-20 Partly from 2002 Prentice Hall PTR Output buffer Inverting buffer isolates storage node. Storage node and inverter have correlated values. Modern VLSI Design 3e: Chapters 3 & 5 week10-21 Partly from 2002 Prentice Hall PTR Using domino logic Can rewrite logic expression using De Morgan’s Laws: – (a + b)’ = a’b’ – (ab)’ = a’ + b’ Add inverters to network inputs/outputs as required. Modern VLSI Design 3e: Chapters 3 & 5 week10-22 Partly from 2002 Prentice Hall PTR Domino and stored charge Charge can be stored in source/drain connections between pulldowns. Stored charge can be sufficient to affect precharge node. Can be averted by precharging the internal pulldown network nodes along with the precharge node. Modern VLSI Design 3e: Chapters 3 & 5 week10-23 Partly from 2002 Prentice Hall PTR Example 1 Modern VLSI Design 3e: Chapters 3 & 5 week10-24 Partly from 2002 Prentice Hall PTR Lecture 25 RC Transmission Line Mar. 12, 2003 Modern VLSI Design 3e: Chapters 3 & 5 week10-25 Partly from 2002 Prentice Hall PTR Topics Wire delay. Buffer insertion. Crosstalk. Inductive interconnect. Modern VLSI Design 3e: Chapters 3 & 5 week10-26 Partly from 2002 Prentice Hall PTR Wire delay Wires have parasitic resistance, capacitance. Parasitics start to dominate in deepsubmicron wires. Distributed RC introduces time of flight along wire into gate-to-gate delay. Modern VLSI Design 3e: Chapters 3 & 5 week10-27 Partly from 2002 Prentice Hall PTR RC transmission line Assumes that dominant capacitive coupling is to ground, inductance can be ignored. Elemental values are ri, ci. Modern VLSI Design 3e: Chapters 3 & 5 week10-28 Partly from 2002 Prentice Hall PTR RC trees Generalization of RC transmission line. Modern VLSI Design 3e: Chapters 3 & 5 week10-29 Partly from 2002 Prentice Hall PTR RC crosstalk Crosstalk slows down signals---increases settling noise. Two nets in analysis: – aggressor net causes interference; – victim net is interfered with. Modern VLSI Design 3e: Chapters 3 & 5 week10-30 Partly from 2002 Prentice Hall PTR Crosstalk delay There is an optimum wire width for any given wire spacing---at bottom of U curve. Optimium width increases as spacing between wires increases. Modern VLSI Design 3e: Chapters 3 & 5 week10-31 Partly from 2002 Prentice Hall PTR Example 2 Modern VLSI Design 3e: Chapters 3 & 5 week10-32 Partly from 2002 Prentice Hall PTR Lecture 26 Sequencial Logic Mar. 14, 2003 Modern VLSI Design 3e: Chapters 3 & 5 week10-33 Partly from 2002 Prentice Hall PTR Topics Memory elements. Basics of sequential machines. Modern VLSI Design 3e: Chapters 3 & 5 week10-34 Partly from 2002 Prentice Hall PTR Memory elements Stores a value as controlled by clock. May have load signal, etc. In CMOS, memory is created by: – capacitance (dynamic); – feedback (static). Modern VLSI Design 3e: Chapters 3 & 5 week10-35 Partly from 2002 Prentice Hall PTR Variations in memory elements Form of required clock signal. How behavior of data input around clock affects the stored value. When the stored value is presented to the output. Whether there is ever a combinational path from input to output. Modern VLSI Design 3e: Chapters 3 & 5 week10-36 Partly from 2002 Prentice Hall PTR Memory element terminology Latch: transparent when internal memory is being set from input. Flip-flop: not transparent—reading input and changing output are separate events. Modern VLSI Design 3e: Chapters 3 & 5 week10-37 Partly from 2002 Prentice Hall PTR Clock terminology Clock edge: rising or falling transition. Duty cycle: fraction of clock period for which clock is active (e.g., for active-low clock, fraction of time clock is 0). Modern VLSI Design 3e: Chapters 3 & 5 week10-38 Partly from 2002 Prentice Hall PTR Memory element parameters Setup time: time before clock during which data input must be stable. Hold time: time after clock event for which data input must remain stable. clock data Modern VLSI Design 3e: Chapters 3 & 5 week10-39 Partly from 2002 Prentice Hall PTR Dynamic latch Stores charge on inverter gate capacitance: Modern VLSI Design 3e: Chapters 3 & 5 week10-40 Partly from 2002 Prentice Hall PTR Latch characteristics Uses complementary transmission gate to ensure that storage node is always strongly driven. Latch is transparent when transmission gate is closed. Storage capacitance comes primarily from inverter gate capacitance. Modern VLSI Design 3e: Chapters 3 & 5 week10-41 Partly from 2002 Prentice Hall PTR Latch operation = 0: transmission gate is off, inverter output is determined by storage node. = 1: transmission gate is on, inverter output follows D input. Setup and hold times determined by transmission gate—must ensure that value stored on transmission gate is solid. Modern VLSI Design 3e: Chapters 3 & 5 week10-42 Partly from 2002 Prentice Hall PTR Stored charge leakage Stored charge leaks away due to reversebias leakage current. Stored value is good for about 1 ms. Value must be rewritten to be valid. If not loaded every cycle, must ensure that latch is loaded often enough to keep data valid. Modern VLSI Design 3e: Chapters 3 & 5 week10-43 Partly from 2002 Prentice Hall PTR Stick diagram VDD Q’ D VSS Modern VLSI Design 3e: Chapters 3 & 5 ’ week10-44 Partly from 2002 Prentice Hall PTR Layout VDD Q’ D VSS Modern VLSI Design 3e: Chapters 3 & 5 ’ week10-45 Partly from 2002 Prentice Hall PTR Multiplexer dynamic latch Modern VLSI Design 3e: Chapters 3 & 5 week10-46 Partly from 2002 Prentice Hall PTR Non-dynamic latches Must use feedback to restore value. Some latches are static on one phase (pseudo-static)—load on one phase, activate feedback on other phase. Modern VLSI Design 3e: Chapters 3 & 5 week10-47 Partly from 2002 Prentice Hall PTR Flip-flops Not transparent—use multiple storage elements to isolate output from input. Major varieties: – master-slave; – edge-triggered. Modern VLSI Design 3e: Chapters 3 & 5 week10-48 Partly from 2002 Prentice Hall PTR Master-slave flip-flop master slave D Q Modern VLSI Design 3e: Chapters 3 & 5 week10-49 Partly from 2002 Prentice Hall PTR Master-slave operation = 0: master latch is disabled; slave latch is enabled, but master latch output is stable, so output does not change. = 1: master latch is enabled, loading value from input; slave latch is disabled, maintaining old output value. Modern VLSI Design 3e: Chapters 3 & 5 week10-50 Partly from 2002 Prentice Hall PTR Sequential machines Use memory elements to make primary output values depend on state + primary inputs. Varieties: – Mealy—outputs function of present state, inputs; – Moore—outputs depend only on state. Modern VLSI Design 3e: Chapters 3 & 5 week10-51 Partly from 2002 Prentice Hall PTR Sequential machine definition Machine computes next state N, primary outputs O from current state S, primary inputs I. Next-state function: – N = (I,S). Output function (Mealy): – O = (I,S). Modern VLSI Design 3e: Chapters 3 & 5 week10-52 Partly from 2002 Prentice Hall PTR FSM structure Modern VLSI Design 3e: Chapters 3 & 5 week10-53 Partly from 2002 Prentice Hall PTR Constraints on structure No combinational cycles. All components must have bounded delay. Modern VLSI Design 3e: Chapters 3 & 5 week10-54 Partly from 2002 Prentice Hall PTR Signal skew Machine data signals must obey setup and hold times—avoid signal skew. Modern VLSI Design 3e: Chapters 3 & 5 week10-55 Partly from 2002 Prentice Hall PTR Clock skew Clock must arrive at all memory elements in time to load data. Modern VLSI Design 3e: Chapters 3 & 5 week10-56 Partly from 2002 Prentice Hall PTR Modern VLSI Design 3e: Chapters 3 & 5 week10-57 Partly from 2002 Prentice Hall PTR