SiPM from ST-Microelectronics Nepomuk Otte & Hector Romo Santa Cruz Institute for Particle Physics University of California, Santa Cruz nepomuk@scipp.ucsc.edu Main Characteristics (Module H) • • • 3 samples packaged in TO-39 cans The devices belong to the lot Y745439, Wafer 3 The SiPM has the following characteristics: 1 mm2 total area (excluding metal pads) n-on-p device 289 (17 x 17) pixels ( 60 µm pitch) 40 µm single pixel active area side (45% geometrical fill factor) Single pixel quenching resistor value about 1.3 MΩ Optical insulation to avoid optical cross-talk effects between adjacent pixels Info from ST Microelectronics Thanks to Massimo Mazzillo for samples Layout Mod H Array Area: 1 x1 mm2 (excluding metal pads) Chip size: 4.37 x 4.37 mm2 Anode Cathode Measurements with Noise: Gain Procedure: Gain derived from average single cell amplitude Temperature: 0°C ΔQ assumption of triangular pulse shape ΔU single cell signals: • 4 ns full width • symmetric effective capacitance of single cell: Ceff=ΔQ/ΔU ~ 15fF breakdown voltage: extrapolation to zero gain Ubreak=29.3 V Operational range: 30V-40V >30% above breakdown Gain/Breakdown/Capacitance vs. Temperature @ 35V parameters from linear fit of gain vs. bias measurements eff. cell capacitance uncertainty ~ 5% breakdown voltage change of gain 0.5% per 1°C ! 0.1% per 1°C Dark Rates discriminator set to < single cell signal Sensor area: 1mm² Dark rate: 100kHz-1MHz @ 0°C: rate doubles every 2 Volts or rate doubles if gain increases by 2·105 Dark Rates vs. Temperature Gain ~ 500,000 factor 2 change per 5°C factor 2 change per 12°C Measurements with Noise: Optical Crosstalk direct and indirect (delayed by max 20 ns) + extra dark counts optical crosstalk 1 phe 2phe naively expect change equal to relative change of gain but optical crosstalk increases faster probably due to increased breakdown probability nice task to simulate with SiSi Optical Crosstalk vs. Temperature 3% optical crosstalk rise above 20°C can be explained by additional darkcounts e.g.: 2 MHz @ 25°C & 20ns gate 4% probability for additional dark count groves ! 0.8 µm wide, 8 µm long IEEE PTL, VOL. 18, NO. 15, 2006 Photon Detection Efficiency Yeah, if only I would know the PDE. packaging complicates mounting into our setup but we will fix this next probably green sensitive (n-on-p) IEEE TED, VOL. 55, NO. 10, 2008 Otherwise: • • • • good gain vs. temperature dependence (0.5% / °C) large bias range (30V-40V) good dark rate behaviour fast signals 3x3 mm² devices in the pipeline