Silanna Semiconductor
INTRODUCTION
The Carbon Tax has increased the cost of operating in Australia by 10% that cannot be passed onto
our customers as all our products are 100% exported. This now questions the viability of
manufacturing in Australia. In addition to the energy increases, the carbon tax is wrongly applied to
reacted gases in the manufacturing process with a burden of $160,000pa.
COMPANY OVERVIEW
Silanna Semiconductor is an Australian owned, very advanced semiconductor design and
manufacturing facility that was incorporated in 1996 and now has over 15 years of experience in
delivering high performance integrated circuits into the global
space, defence, medical and consumer markets. Silanna has built
a strong production team that maintains its manufacturing
processes at high levels of yield and performance.
Silanna has developed a strong development team, with systems
in place that enable it to rapidly bring processes from concept to
development and into production.
Apart from being a commercially focussed organisation with almost all of the products being exported,
we have considerable strategic value to research organisations including Universities, NICTA, CSIRO
and DSTO. We support major research projects such as the CSIRO's Square Kilometre Array Radio
Telescope, the UNSW Quantum Computing Project and many University Linkage projects.
Silanna has a strong record of collaboration and engagement with
Universities (Australian as well as USA, including Yale and Johns
Hopkins).
These engagements develop research ideas, address
research problems, and harness complementary strengths and facilities.
We have also collaborated successfully with other Australian research
organizations, as well as private industry. We value these engagements
and see them as a crucial element in the development of new
approaches to harness our technology to solve important problems.
Silanna Semiconductor has two facilities in Australia, one in Sydney Olympic Park and the other in
Brisbane. The Sydney facility has an advanced fab with capabilities to produce both CMOS and
Compound Semiconductors. We currently employee 100 highly trained operators, engineers and
scientists.
We have intellectual property in manufacturing processes that extends more than 30 years and our
expertise is in commercialising R&D.
Successes
 Manufactured 100’s of millions of parts and 100’s of designs.
 Manufactures 100% of Peregrine Semiconductor’s space and defence
products
 Parts used on all 3 Mars Rovers
 Most US satellites launched use parts manufactured by Silanna
 Supplied in excess of one million chips per week to the mobile phone
market, that feeds the supply chain of Nokia, Motorola, Apple (iPhone) and RIM (Blackberry)
to name a few.
MANUFACTURING CAPABILITY
The CMOS manufacturing operation is performed in Fab 1 and Fab 2. Fab
1 has Class 10 cleanrooms and Fab 2 has Class 1 cleanrooms. Tooling is
supplied by industry standard vendors such as ASML photolithography
wafer scanner and steppers, SVG deep-UV photoresist tracks, Varian highangle ion-implanter, SVG vertical furnaces, Mattson Rapid Thermal
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Silanna Semiconductor
Processor, advanced metrology tools and other facilities support equipment. Silanna currently
produces 150mm wafers in both UltraCMOS™ and bulk silicon.
A recent investment of $30 million in a compound semiconductor facility focused around a Veeco
dual-chamber molecular beam epitaxy tool (MBE). This facility manufactures very low defect density
wafers of GaN (plus variants) with wafer sizes ranging from 50mm to 150mm.
Gases Used in the Manufacturing Process.
Gases
There are three classes of gases we use; gases that are reacted and consumed in the manufacturing
process, refrigeration gases that are not reacted and inert gases such as nitrogen and argon.
Refrigeration Gases
The following list is the refrigeration gases that are not used in the process but in manufacturing
equipment that could be the subject of reclaim or destruction.
Refrigeration Gases
Stock #
Chemical
Formula
CHClF2
Gas type
R22 ChloroDiFluoroMethane
R134a - Tetrafluoroethane
C2H2F4(CH2FCF3)
R402a (38% R-22, 60% R-125, 2% R-290)
R404a (44% R-125, 52% R-143a, 4% R-134a)
R409a (R-22, R-124, R-142b)
R410a (R-32, R-125)
TOTAL
Amount
ODP
GWP
(Kg)/yr
0.05
1700
40
0
0.02
0
0.047
0
1300
2600
3300
1585
2100
10
10
10
10
10
90
CO2 /yr
(ton)
68
13
26
34
16
21
178
Carbon
Tax
Refrigerant Total CTax CTax per
($/kg)
tax ($/kg)
($/kg)
Bottle $ Total CTax/yr
$39.10
$0.165
$39.265 $1,564.00
$1,570.60
$29.90
$59.80
$75.90
$36.46
$48.30
$0.165
$0.165
$1.165
$0.165
$0.165
$30.065
$59.965
$77.065
$36.620
$48.465
$299.00
$598.00
$759.00
$364.55
$483.00
$4,067.55
$300.65
$599.65
$770.65
$366.20
$484.65
$4,092.40
New
Gas
Bottle
No. of
Country
Total Gas Price/bottle
Price inc
bottles
Imported
Price/yr
AUD
Cyl. kg
Ctax
used /yr
From:
$22
$22
40.0
$1,586
1
Australia
$22
$25
$24
$25
$25
$143
$22
$25
$24
$25
$25
$143
10.0
10.0
10.0
10.0
10.0
$321
$623
$783
$390
$508
$4,211
1
1
1
1
1
6
Australia
Australia
Australia
Australia
Australia
As shown the total gas price of the 6 bottles per year is $143 but when the carbon tax of $4092 is
applied takes the gas price to $4235. This is a 28 times increase. The total CO2 equivalent mass is
178 tonnes.
Reacted Gases
The following list is the gases that are reacted (destroyed) in the manufacturing process.
Manufacturing Gases
Chemical
Formula
Stock #
Gas type
8020 R116 - Hexafluoroethane
Amount
GWP
(Kg)/yr
9200
517
ODP
C2F6
CO2 /yr
(ton)
4,762
Carbon
Tax
Refrigerant Total CTax CTax per
($/kg)
tax ($/kg)
($/kg)
Bottle $ Total CTax/yr
$211.60
$0.165
$211.765 $9,119.96 $109,524.86
8029 Sulphur Hexafluoride
SF6
23900
34
814
$549.70
$0.165
8026 Nitrous Oxide
N2O
310
1633
506
$7.13
$0.000
$7.130
$194.01
8052 Nitrogen Trifluoride
NF3
17200
20
344
$395.60
$0.000
$395.600
$7,912.00
$7,912.00
8038 R14 - Tetrafluoromethane
CF4
6500
48
310
$149.50
$0.165
$149.665
$4,746.63
8021 R23 - Trifluoromethane
CHF3
11700
16
186
$269.10
$0.165
$269.265
$8,543.93
3
8085 Methane (12.5m )
CH4
21
11
0
$0.48
$0.000
$0.483
8061 Carbon Monoxide (5.9m3)
8053 Carbon Dioxide
CO
CO2
3
1
6
9
0
0
$0.07
$0.023
$0.000
$0.000
$0.069
$0.023
2293
6,922
TOTAL
0
0
$549.865 $12,478.19
$18,722.90
New
Gas
Bottle
No. of
Country
Total Gas Price/bottle
Price inc
bottles
Imported
Price/yr
AUD
Cyl. kg
Ctax
used /yr
From:
$96,280.20
$8,023
43.1
$17,143
12
USA
$3,164.00
$2,109
22.7
$14,588
1.5
USA
$11,640.44 $131,040.00
$2,184
27.2
$2,378
60
USA
$14,434.00
$14,434
20.0
$22,346
1
USA
$7,127.80
$6,119.24
$4,079
31.8
$8,826
1.5
USA
$4,274.58
$2,908.15
$5,816
31.8
$14,360
0.5
USA
$5.26
$5.26
$1,430.00
$1,430
10.9
$1,435
1
Singapore
$1.32
$0.69
$0.40
$0.21
$472.30
$104.56
$1,574
$349
19.1
30.0
$1,576
$349
0.3
0.3
Singapore
Singapore
$43,001.98 $159,208.44 $255,952.44
$39,999
$83,001
78
The manufacturing gases in the table above are in order of the greatest impact from the carbon tax.
As shown the total gas price of the 78 bottles per year is $255,952 but when the carbon tax of
$159,208 is applied takes the gas price to $415,160. This is an increase of 162% in cost. The total
CO2 equivalent mass is 6,922 tonnes.
Since these gases are reacted in the process we are unfairly being taxed for gas byproducts that are
non-polluting.
Inert Gases
The inert gases such as liquid nitrogen, liquid oxygen and argon do not have a carbon tax directly
applied but because these gases are produced from high electricity consumption during the air
separation process there are increases applied to them. For instances liquid nitrogen will increase by
14% and we use $1 million dollars of LN2 annually which means this gas alone has increased by
$140,000. When oxygen and argon are taken into account this adds another $10,000 in carbon tax.
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Silanna Semiconductor
Detail of Gas Reaction Process
The following text explains the reaction products of each of these gases used in the manufacturing
process.
R116 - Hexafluoroethane
C2F6
C2F6 is used in the Novellus Plasma Enhanced Chemical Vapour Deposition system for a chamber
clean. The main aim of this gas is to convert SiO2 and Si3N4 that is deposited on the heater block into
gaseous SiF4 which leaves a carbon residue in the chamber. The C2F6 and O2 react to release F ions.
The reaction components are:
C2F6 + 2O2 =CO2 +6F_+ C
SiO2 + 4F- = SiF4 (gas) + O2
Si3N4 + 12F- = 3SiF4 + 2N2
The by-products SiF4 and SFx are eliminated by the scrubber.
Sulphur Hexafluoride
SF6
SF6 is used in the plasma etcher as a silicon etch. The reaction is:
SF6 + e- → SF5 + F + eSi + F → SiF4
The by-products SiF4 and SFx are eliminated by the scrubber.
Nitrous Oxide
N2O
N2O is used in the Novellus Plasma Enhanced Chemical Vapour Deposition system as the O2 source
and the precursor used for NSG, BSG, PSG and BPSG oxide deposition. The reaction is:
3SiH4 + 6N2O → 3SiO2 + 4NH3 + 4N2
For doped oxides, B2H6 and PH3 are added in specific amount to maintain B% and P% in the glass.
The by-product NH3 is eliminated by the scrubber
Nitrogen Trifluoride
NF3
NF3 is used in the plasma etcher as a silicon nitride etch. The reaction is:
NF3 → NFx + F
Si3N4 + F → SiF4 + N
The by-product SiF4 is eliminated by the scrubber.
R14 - Tetrafluoromethane
CF4
CF4 is used in the plasma etcher as a silicon dioxide etch. The reaction is:
CF4 + e- → CHF3+ + F + 2eSiO2 + F- → SiF4 + O
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CF4 + e- → CHF3 + F + eCFx + O → CO + COF2 + CFy
The by-product SiF4, CFx, CO, COF2 and CFy are eliminated by the scrubber.
CF4 is also used in the plasma etcher as a silicon nitride etch. The reaction is:
Si3N4 + F → SiF4 + N
CFx + N → CN + CFy
The by-products SiF4, CN and CFy are eliminated by the scrubber.
R23 - Trifluoromethane
CHF3
CHF3 is used in the plasma etcher as a silicon dioxide etch. The reaction is:
CHF3 → CHF+ + F
SiO2 + F → SiF4 + O
CHFx + O → CO + COF2 + CHFy
The by-products SiF4, CHFx, CO, COF2 and CHFy are eliminated by the scrubber.
Methane
CH4
N2O is the O2 source and the precursor used for NSG, BSG, PSG and BPSG oxide deposition.
Chemistry NSG oxide:
3 SiH4
+
6 N2O
→
3 SiO2
+
4 NH3
+
4 N2
For doped oxides, B2H6 and PH3 are added in specific amount to maintain B% and P% in the glass.
Carbon Monoxide
CO
CO is used in the plasma etcher to help govern the silicon dioxide etch. The addition of CO reduces
the amount of O available and slows down the reaction. The chemistry is the same as for CF 4 shown
above.
CO + O2 → CO2 + O
The by-products are eliminated by the scrubber.
Carbon Dioxide
CO2
CO2 is used in the DI water rinse bath for post cleaning of wafers. It is bubbled into the water at a very
low rate and reacts to form a very weak carbonic acid solution.
CO2 + H2O → H2CO3
The wet scrubbers employed at Silanna Semiconductor is a simple method to clean exhaust air,
exhaust gas and remove toxic or smelling compounds. In the flue gas scrubber, the gas gets in close
contact with fine water drops in a co-current or counter current flow. This method is more effective
when the water drop size gets smaller and the total surface between water or washing fluid and the
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Silanna Semiconductor
gas gets larger. The water or washing fluid is recirculated normally in order to save water and reduce
the amount of waste water.
The following components are removed from the exhaust gas:




Water soluble substances will be dissolved.
Dust will be precipitated.
Chemicals that can be hydrolysed are decomposed.
Steam will be condensed.
The result is decontamination, detoxification, dedusting or dust removal, dehumidification, as well as
removal of smelling for the benefit of our environment.
Especially water soluble components can be removed very well from the gas. By dissolving those
components, the water or washing liquid will be contaminated in many cases. The dissolved
components are frequently acid or basic chemicals like hydrogen chloride (HCl), nitric / nitrogen oxide
NO / NO2 or ammonia NH3. A neutralization unit is installed in the scrubber using caustic soda, to
keep the pH value of the washing liquid and the waste water at a neutral level. Furthermore
absorption of acid components is improved by using basic washing liquid and removal of basic
chemicals is more effective by using acid washing liquid.
Compounds which hydrolyse decompose in contact with water. During the chemical reaction new
soluble compounds might be created which are then removed immediately by the spray water. Solid
reaction products end up in the waste water as slurry and have to be filtered out and disposed.
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