INUP
Hands-on Training on “Nanofabrication Technologies”
9 – 18 December 2014
Participants List
Batch A:
MEMS
Cantilever
Batch B:
MOS Capacitor
Batch C:
Photovoltaic
Batch D:
Biosensors &
Microfluidics
Soumi Saha
Ribu Mathew
Lintu Rajan
Robin Khosla
Varun Thakur
Deepak K
Jyotirmoy Dutta
Sourav Sarkar
Chinthlakunta
Ashok
A Nallathambi
Sanjay Kumar
Nayak
Tarun Sharma
J V V N Kesava
Rao
Jashan Deep Singh
Anil Kumar Pal
Dr. Jayaramaiah J
R
Sankaranarayanan
S
CH. Shilpa Chakra
Arpan De
N Aruna
1
Dr. Sanjeev Kumar
Mahto
Anil Babasaheb Vir
Utkarsh
Vinodchandra
Pancholi
Anjali Chaudhary
INUP
Hands-on Training on “Nanofabrication Technologies”
9th December to 18th December 2014
Program Schedule
9th December 2014 Tuesday (2nd Floor Conference Room)
Time
Event
8.00 AM - 9.00 AM
Breakfast @CeNSE (TF-08)
9.00 AM – 10.00 AM
Registration (Ground Floor Reception)
10.00 AM – 11.00 AM
11.00 AM – 1.00 PM
Cleanroom protocols & Safety Training – Dr. Savitha
Overview of device modules – Smitha Nair/Sangeeth K
1.00 PM – 2.30 PM
Lunch and Interaction
2.30 PM - 3.30 PM
About MNCF - Dr. Girish Kunte
3.30 PM - 4.15 PM
Dr. Prabhakar, about execution of project proposal at CeNSE (Technical
Information)
Tea Break
Clean Room Safety Training Quiz
4.15 PM - 4.30 PM
4.30 PM – 5.00 PM
10th December 2014 Wednesday
8.00 AM - 9.00 AM
Batch C
Photovoltaic:
Time 9:30 AM – 1.30 PM
Step 1: (9:30- 10:30)
Wafer Cleaning
Step 2 : (10:30 – 11:30)
Wet Oxidation
Step 3: (11:30-12:00)
Measurement
Step 4: ( 12:00 - 1:30 )
Lithography for diffusion,
backside PR coating
Tea and Breakfast
Batch B
MOS Capacitor
Time 9:30 AM – 1.30 PM
Training SEM
Batch A
MEMS: Cantilever
Time 9:30 AM – 1.30 PM
Step 1: (9:30- 10:30) Wafer
Cleaning
Batch D
PDMS Microchannel
Time 9:30 AM – 1.30 PM
Training DC Probe
Step 2: (10:30 -1:00 )EVG
Lithography (for Cantilever)
And Inspection
1.30 PM -2.30 PM: Lunch and Interaction
Batch C
Time: 2:30 PM – 5.00 PM
Step 5 : (2:30 -3 :30)Oxide Etching + PR strip
Batch B
Time: 2.30 PM – 5.00 PM
Training DC probe
Introduction to other bay
5:00 PM – 5:30 PM
Batch A
Time: 2.30 PM – 5.00 PM
Step 3: (2:00 -3:30) RIE
Etching Silicon
Step 4: (3:30 -5:00) PR
Removal and inspection
Tea Break
2
Batch D
Time: 2.30 PM – 5.00 PM
Training SEM
11th December 2014 Thursday
8.00 AM - 9.00 AM
Batch C
Time: 9:30 AM – 1.30 PM
Step 6 : (9:30 – 10:30)
wafer cleaning (RCA)
Tea and Breakfast
Batch B
Time: 9:30 AM – 1.30 PM
Training AFM
Step 6: (10:30 - 2:30)
POCL3 Diffusion
Batch A
Time: 9:30AM – 1.30 PM
Step 5: (9:30 – 11:00)Wet
OXIDE etching
Batch D
Time: 9:30 AM – 1.30 PM
Other small Equipments
Step 6: (11:00 -1:00)CPD
1.30 PM -2.30 PM: Lunch and Interaction
Batch C
Time 2.30PM – 5.00 PM
Batch B
Time: 2.30PM – 5.00 PM
Batch A
Time: 2.30PM – 5.00 PM
Batch D
Time: 2.30PM – 5.00 PM
Step 7: ( 2:30 - 3:30)PSG
etching
Step 8: (3:30 - 4:00) four
probe measurement
(sheet resistance )
Step 9: (4:00 – 4:30)
wafer front side PR
coating
Step 10: (4:30 – 5:00)
back oxide etch
5:00 PM – 5:30 PM
Other small Equipments
Introduction to other tools
(not included in the module)
Training AFM
Tea Break
3
12th December 2014 Friday
8.00 AM - 9.00 AM
Batch C
Time 9:30 AM - 1:30 PM
Step 11: Front Al
evaporation
Step 12: (9:30 – 10:30)
Lithography (contact
pads)
Step 13: (10:30 -11:00)
wet Al etch
Step 14: (11:00 – 11:30)
back oxide etch
Step 15: (11:30 – 1:00)
back Al evaporation
Unloading at 2:30
Tea and Breakfast
Batch B
Time: 9:30 AM- 1:30 PM
Step 1: (9:30 -10:30)RCA
cleaning
Batch A
Time 9:30 AM – 1.00 PM
Characterization
(Vibrometer)
Step 2: (10:30 – 11:30)Dry
Oxidation (SiO2)
Note: samples need to be
prepared earlier
Batch D
Time 9:30 AM – 1.00 PM
Step 1: (9:30- 10:00)Wafer
Cleaning (piranha)
Step 2: (10:00- 11:00)Oxide
layer growth
Step 3: (11:00 – 12:00)
Lithography
Ellipsometer
Step 3 : (11:30 -12:30) PR
spinning + Etching of
backside oxide
(Load for evaporation
parallel in the morning)
1.30 PM -2.30 PM: Lunch and Interaction
Batch C
Time 2.30PM – 5.00 PM
Step 16: (3:30 -4 :30 )
annealing
Batch B
Time 2.30 PM – 5.00 PM
Step 4: Front
metallization
Batch A
Time 2.00PM – 5.00 PM
Optical Profilometer
Step 5: Lithography
Step 5: (3:30 – 4:30 ) DRIE
silicon etch
Step 6: Metal etch
5:00 PM – 5:30 PM
Batch D
Time 2.30 PM – 5.00 PM
Step 4: (2:30 – 3:30) Oxide
etching ( dry) + Ashing
Tea Break
4
15th December 2014 Monday
8.00 AM - 9.00 AM
Batch C
Time 9:30 AM – 1.30 PM
Characterization :
Tea and Breakfast
Batch B
Time: 9:30 AM- 1:30 PM
Step 7: native oxide
removal
Batch A
Time 9:30 AM – 1.00 PM
Training DC Probe station
Batch D
Time 9:30AM – 1.30 PM
Step 6: PDMS coating
Dc probe station
Step 8: back metal
evaporation
1.30 PM -2.30 PM: Lunch and Interaction
Batch C
Time 2.30 PM – 5.00 PM
Batch B
Time 2.30 PM – 5.00 PM
Batch A
Time 2.00 PM – 5.00 PM
Batch D
Time 2.00 PM – 5.30 PM
Characterization :
Step 6: (2:30- 3:30)
Annealing
Training other small
equipments
Step 7: (2:00 -2:30) Glass
piranha clean
Solar simulator
Introduction to other
bays
Step 8: (2:30-3:00)PDMS
Peeling
Step 9: (3:00-5:00) Bonding
5:00 PM – 5:30 PM
Tea Break
16th December 2014 Tuesday
8.00 AM - 9.00 AM
Batch C
Time 9:30 AM – 1.00 PM
Training AFM
Tea and Breakfast
Batch B
Time 9:30AM – 1.00 PM
Electrical
Characterization
Batch A
Time 9:30 AM – 1.00 PM
Training SEM
Batch D
Time 9:30 AM – 1.00 PM
Characterization
1.30 PM -2.30 PM: Lunch and Interaction
Batch C
Time 2:30pm-5pm
Training SEM
Batch B
Time 2:30pm-5pm
Training AFM
5:00 PM – 5:30 PM
Tea Break
Batch A
Time 2pm-5pm
Training AFM
5
Batch D
Time 2pm-5pm
Characterization
17th December 2014 Wednesday (Second Floor Conference Room)
8.00 AM - 9.00 AM
Tea and Breakfast
9:00 AM onwards
Presentation by Participants
1:00 PM – 2:00 PM
Lunch and Interaction
2:00 PM onwards
Presentation by Participants & Lab Visits
18th December 2014 Thursday (Second Floor Conference Room)
8.00 AM - 9.00 AM
Tea and Breakfast
9:00 AM onwards
Lab Tours
1:00 PM – 2:00 PM
Lunch and Interaction
2:00 PM onwards
TA distribution/ Feedback/Concluding Session/ Certificate Distribution
6