Use of Electroless Nickel To Reduce Gold Requirements By Donald W. Baudrand The high price of gold and the unpredictability of its supply make the substitution of less costly metals an important consideration for the electronics industry. Electroless nickel alloys are logical choices by virtue of their solderability, diffusion-barrier effectiveness, and bondability. These performance characteristics are discussed, and supportive test data are presented and evaluated. Also provided are examples of applications where electroless nickel is being used to reduce gold requirements. p recluding an extraordinary metallurgical break through, the unique properties of gold will ensure its continued use in modern electronic applications. But t he c os t o f g old is e x c e p tiona lly h ig h, t he market volatile, and the supply vulnerable to world conditions. As a matter of economic survival, the electronics industry must minimize gold usage. One logical approach is the selective substitution of less costly metals. Toward this goal, numerous electroplated metals, each having merit for one or more electronic applications, have been studied and reported.' Additional studies indicate that certain characteristics of autocatalytically plated nickel -alloys permit the deposits to serve functionally as well as gold. The electroless nickel deposits also can be used satisfactorily as an undercoat for a thin layer of gold. Among the deposit characteristics of importance are: (1) solderability, (2) diffusion-barrier effectiveness, and (3) bondability. This paper discusses these characteristics and presents related test data and evaluations. Examples of applications for which electroless nickel is being used to reduce gold requirements also are cited. Solderability Gold is used for solderability even though it is well known that it dissolves in the solder and that soldering takes place onto the basis metal. A high gold content in solder causes a weak, dull joint. 2 Thus, a thin gold deposit is better than a thick deposit when a non-activated flux is used. Considering these shortcomings, various electroless nickel deposits were tested to evaluate their solderability. T he s olde r ab ility te s ts w e re c ond uc te d on c lea ned, polished-steel Hull cell panels plated in eight diffe rent electroless nickel baths. Deposit compositions from these baths* were: 1. 2. 3. 4. 5. N ic ke l -b or o n ( 0 .2 % B) N icke l -b or on (0.3 % B) Nickel-boron (3% B) Nickel-boron-tungsten (0.3% B, 1% W) Nickel-boron-tungsten (0.3% B, 3% W) 6. Nickel-phosphorus (4% P) 7. Nickel-phosphorus (8% P) 8 . N ic ke l -p ho s p ho r us ( 1 1 % P ) The following cleaning cycle was used to prepare the test panels for plating: (1) alkaline soak-clean and scrub; (2) water rinse; (3) acid dip in 50 percent HCI; (4) water rinse; and (5) deionized water rinse. A sufficient number of panels was plated in each bath to assure an accurate evaluation of the solderability of each type of deposit. All panels were plated with 5 to 6.3 Am (200 to 250 Ain.) of nickel alloy, using a bath loading of 1.2 dm 2 /L (0.75 ft'-/gal). Following plating, some of the panels were (1) treated with a mineral -oil lubricant to try to minimize oxidation, (2) treated with an organic polymer to try to eliminate oxidation or (3) plated with 2.5 to 3.8 MO to 150 min.) of bright acid tin.** To establish the effect of aging on solderability, different groups of the plated panels received the following attention prior to solderability testing: (1) no treatment —used asplated; (2) degreasing; (3) degreasing and steam-aging for 1 hr in acc or da nc e w ith MI L -ST D -202 , Method 208; (4) degreasing and heating to 500° C (932° F) for 5 min. All panels were solder-tested using a Men iscograph with a Soltec recorder. The solder was 63/37 tin -lead at 240° C (464° F). The fluxes employed were Type R (water -white r os i n) , T yp e R A ( a c ti va t ed r os in) , T y p e R M A ( mi ld l y activated rosin), and organic intermediate fluxes. Tables 1 and 2 give test conditions and results. The last column in each table shows the time in sec to reach zero force axis—the moment when the wetting force is equal and opposite to the buoyancy of the specimen. A time of 1 sec or les s is c ons id er ed ex c ell en t a nd a t ime o f 2 .5 s ec is considered satisfactory. Several conclusions emerged from the solderability test, as follows: 1. All surfaces soldered well using Type RMA flux except for aged nickel-phosphorus deposits. 2. Electroless nickel -boron deposits exhibited good solderability when Type RMA flux (or stronger) was used, even after steam aging. As a point of information, a sulfide aging test (not covered in this paper) was conducted (per French National Specification NF -C90" NIKLAD 752, 750, 740, 6000, 6000W, 776, 795, and 1000, respectively. NIKLAD is a tradename of Allied-Kelite, Des Plaines, IL. *Vulcan Bright Acid Tin, Allied-Kelite, Des Plaines, IL. 3. 4. 5. 6. 550) under test conditions similar to those in this paper. The results of this previously run test showed that sulfide exposure of nickel-boron deposits did not adversely affect their solderability. Steam-aged nickel-phosphorus deposits had marginalto-poor solderability with Type RMA flux, but soldered well with Type RA flux. The solderability of all samples heat-aged at 500° C for 5 min was not acceptable. No appreciable difference in solderability was noted as a result of pH variations in baths of the same formulation. The organic polymer coating did not improve solderability and did not withstand steam-aging. Diffusion Barrier Effectiveness - Copper and electrodeposited nickel readily diffuse or migrate through a gold overplate. Oxides of these metals on the gold surface can cause poor solderability and increased contact resistance.' Preventing this degradation is especially important to the electronics industry. To this end, several investigators have studied and reported on the effectiveness of various metal underplates as barriers to diffusion. According to Turn and Owen," "Pure hexavalent chromium, and nickel with 8 to 10 wt percent phosphorus, are the most effective barriers. A thickness of 2 pm of these yield negligible copper penetration after 12 hr at 550° C." They further state, "Nickel with 2 to 3 wt percent phosphorus, nickel with 1 wt percent boron and pure nickel are effective barriers." In another report,' the authors state that, "The Co and Co-5 wt percent P barriers are the most effective of those investigated in this work, and are comparable to the nickel-8 wt percent P barrier investigated by Turn.' Chromium and tin-nickel failed to significantly impede copper penetration, and are similar to the precious metals in this regard." Table 1 Solderability Test Results for Nickel-Boron Alloys Average value in sec to reach Boron content, % pH Pretest treatment Flux zero-force axis 0.2 0.2 0.2a 6.5 6.5 6.5 6.5 Degreased Steam-aged Steam-aged As-received RMA RMA RA RMA 1,18 2.30 0.73 1.25 0.2" 6.5 Degreased R 1.98 0.2 h 6.5 Degreased RMA 1.15 0.3 3.0 3.0 3.0 6.5 6.0 6.0 6.0 Degreased Degreased Steam-aged Steam-aged RMA RMA RMA RA 1.18 1.13 1.65 0.80 0.3' 0.3' 0.3' 0.3d 6.0 6.0 6.0 6.0 Degreased Steam-aged Steam-aged Degreased RMA RMA RA RMA 1.10 2.45 0.75 0.72 0.2 Bath 'Coated with organic polymer. Differences were noted in the results obtained with these panels. "Tin plated. `These deposits also contained 1% W. ° This deposit also contained 3% W. The results of our investigation of diffusion barriers (using a 100-hr steam-aging test) was supportive of the findings of the studies cited above. In summary, the results showed that: (1) an electroless nickel-phosphorus barrier (underplate) virtually prevents copper diffusion into the gold overlay and (2) because of its superior surface properties, a nickel/3% boron deposit plated on a nickel-phosphorus deposit provides the best overall performance. This combination not only serves as an effective barrier, but remains solderable and retains its desirable electrical properties under more severe exposure conditions than any other barrier material tested. Bondability Electroless nickel-phosphorus and nickel-boron deposits exhibit excellent bondability. As a result, they are finding increased use in two process areas of electronic packaging-wire bonding and diode attachment. Wire Bonding-Ultrasonic bonding of aluminum wire to pads and header pins plated with Ni -B has proved economical and reliable, and a number of manufacturers use this method. No special preparation is necessary and the process produces these favorable results: (1) gold plating on the pads and header pins is eliminated; (2) gold wire is eliminated in favor of aluminum wire; and (3) defects (Kirkendall voidine7) caused by the bonding of aluminum to gold are eliminated. Table 3 is a tabulation of data from a typical ultrasonic bond test. With this test, the bond strength of aluminum wire was determined for different thicknesses of nickel-boron plate. The wire diameter was 25.4 pm (0.001 in.) and the nickel-boron deposit contained 0.3 to 0.35 percent boron. Prior to bonding, the nickel-boron plate was baked at 120° C (248° F) for 1 hr in air. Testing equipment consisted of a Lindberg 1101 Ultrasonic Wire Bonder and a Tempress 12965 bonding tool. Bond load was 15 g, power setting 5.5, Table 2 Solderability Test Data for Nickel-Phosphorus Alloys Phosphorus Bath content, % pH Pretest treatment 4' 8 8 8 8 8 9.5 4.8 4.8 5.2 4.8 4.8 Degreased Steam-aged Steam-aged Degreased Degreased Steam-aged 8 8 8 4.8 4.8 5.2 d 8° 8 d 11 11 11 11 11 Average value in sec to reach zero-force Flux axis 1.98 RMA RA RMA RMA RMA RMA 1.10 2.70 0.73 1.38 3.13 Steam-aged 500° C As-received RA All RMA 0.90 4,4 4.4 4.8 4.8 4.8 4.8 Degreased Degreased As-received As-received Degreased 500° C R RMA 1.88 0.90 1.65 0.90 1.09 4.8 4.8 4.8 4.8 5.2 As-received Degreased Steam-aged 500° C Degreased RMA RMA RMA All RMA 'Slight dewetting. 'Some dewetting. No wetting. 'Tin plated. `Dewetting on one edge. 'Slight wetting with acid flux. RMA RMA All 1.93 1.85 1.75 2.63 1.89 Table 3 Ultrasonic Bond Strength of Aluminum Deposit thickness pm 0.31 pin. 12.5 0.74 1.23 1.63 2.15 2.85 24.4 49.0 65.0 86.0 114.0 Table 4 Effect of Post-Treatments on Ultrasonic Wire Bondability Wire on Electroless Nidcel-Boron• Wire bond strength, g Number of bonds made 12 6.24± 0.41 6.38 ± 0.42 6.51 ± 0.38 6.0 ± 0.27 6.51 ± 0.34 6.4 ± 0.26 The deposit contained 0.3% B. The wire diameter 12 12 12 12 396 was 25.4-um (0.001-in.). and time setting 5. The test data indicate that lead-wire bond strength was excellent and was not significantly affected by deposit thickness. (The lower limit accepted by industry for a bond of this type is 2.5 g.) These results reinforce those obtained by Estep, who reported that. "Aluminum ultrasonic wirebonding to the Ni-B layer has been accomplished with bond strengths approaching 11 g for 1-mil wire." The reliability and stability of the wire bonds were evaluated in the second phase of the bond test. The wire bonds were exposed to simulated environmental effects and to prolonged baking that reflected conditions that might occur during repair. Then, using the original test conditions, new bond strengths were measured. As shown in Table 4, bond strength was not adversely affected by exposure to steam, heat or passivation. The exposure to prolonged baking did result in a decrease in bond strength, but the value still exceeded the industry's requirement of at least 2.5 g. Diode Attachment-Preform processing using electroless nickel-boron has replaced gold spot-plating for diode attachment in numerous applications. Gold/silicon preforms bond well to nickel-boron, as do conductive and nonconductive epoxy diode-attach systems. In fact, there is a broad choice of electroless nickel alloys that exhibit satisfactory diode-bonding characteristics. These include nickel/low phosphorus, nickel-boron (0.2-3% B), and nickel polyalloys such as Ni-Mo-B, Ni-W-B, and Ni-Sri-B. The final selection depends on solderability, diffusion-barrier effectiveness, wire bondability or electrical conductivity. Cox and Dean Nreported difficulties in diode bonding to Alloy 194 copper lead frames with an electrodeposited nickel barrier. They additionally noted that, "No problems were experienced with electroless nickel-plated frames." In their analysis, they considered two possible causes of the diode bond failure: "First is the presence of a foreign metallic impurity which can cause a low surface free energy layer. Zinc has been found to be detrimental to the solderability of copper alloys. There has been no evidence of zinc in this system, but copper has been found in many of the failed interfaces. Copper can codeposit with gold or nickel in electroplating systems. Copper can also diffuse through the nickel barrier from the 194 Alloy substrate. . The other possibility for the cause of failure is the presence of oxygen to form an oxide at the nickel eutectic interface." In describing the role of the electroless nickel barrier in minimizing the detrimental effects of both the copper and oxygen, the investigators noted that, "The phosphorus in the electroless nickel would tend to deoxidize this system and thus explain the greater eutectic spread we observed. In addition, the lamellar grain structure which is developed in electroless nickel also would minimize grain boundary diffusion of copper through the deposit." The mode of failure from electroplated nickel was dewetting of the gold/silicon eutectic from the lead frame. No dewetting was observed when 1.25 pm (50 pin.) of electroless nickel was plated on the copper alloy. Post treatment Wire bond strength, g Immersion in chromic acid, then 120° C bake for 1 hr. 6.03 ± 0.21 Immersion in boiling water for 4 hr, then 120° C bake for 1 hr. 6.03 ± 0.25 Exposure to steam for 4 hr, then 120° C bake for 1 hr. 130° C bake for 64 hr. 6.09± 0.16 4.5 ± 0.69 Gold Reducing Applications - The following applications are typical examples of how electroless nickel alloys are used to reduce gold requirements in the electronics industry: TO-8 hybrid packages, previously plated with 2.5 to 3.8 pm (100 to 150 pin.) of sulfamate nickel and then 12.5 to 20 pm (500 to 800 pin.) of gold, are now plated with 20 ± 5 pm (800± 200 pin.) of electroless nickel/3% boron in place of gold. Soldering, wire bonding, and epoxy diode attaching are carried out satisfactorily on this production component. Dual inline sockets, previously plated with 5 pm (200 pin.) of nickel and then 5 pm of gold, are now finished with 2.5 pm (100 pin.) of electroless nickel/0.3% boron. The basis metal is beryllium-copper. Using a "burn-in" or "heat-soak" test for quality control, there was no failure of the parts plated with nickel-boron after 500 hr at 95° C (203° F), whereas the goldplated parts often would not survive 500 hr. The mode of failure was an unacceptably high resistance or a complete loss of contact. In addition, the mating fingers of the PC board in this application are now plated with 0.25 pm (10 pin.) of an electroless nickel-tin-boron strike and then with 2.5 pm (100 pin.) of electroless nickel/0.3°/0 boron. Good results were obtained from the same QC test used for the sockets. Isolated copper circuits are now plated in an electroless nickel-tin-boron strike solution. This bath deposits directly onto copper without any special steps such as palladium activation and without the need to make contact with a dissimilar metal. The circuits are then plated with 37.5 to 87.5 pm (1500 to 3500 pin.) of electroless nickel-phosphorus or nickel-boron, depending on requirements. Immersion gold is sometimes used over the electroless nickel. The ability to plate onto isolated r.;27per-circuit elements eliminates the need for connecting bars, on which gold is pl ated unnecessarily. Presently, circuits for watches and minicalculators are produced using this technique. Other applications are being evaluated. Transformer copper contacts, previously plated with 0.7 pm (28 pin.) of gold, are now plated with 2.5 to 3.8 pm (100to 150 pin.) of electroless nickel/3% boron. The life expectancy of the transformer was determined by continuously contacting two transformer turns at the contact point, imposing a voltage, and measuring heat rise using a thermocouple on the contact. In comparison tests, the gold-plated contacts generally would fail by "burn out" at about 500 hr, whereas the electroless nickel deposit showed no failure after 700 hr, at which time the test was terminated. There was a fairly constant 4° C (39° F) differential between the contacts plated with electroless nickel and those plated with gold until near the "burn out" stage of the goldplated contacts. At that point, the temperature of the goldplated contacts rose suddenly, and was followed by a loss of contact. Thin-film hybrid microcircuit devices employ electroless nickel/3% boron as an improved finish for a gold/silicon diode attachment. The metallization process consists of a sputter-deposited nickel-chromium film on an alumina substrate. This step is followed by nickel deposition, then a 1.3µm (50 pin.) deposit of electroless nickel/3% boron, and a final 1.3 pm electroplate of gold. As described by Estep,8 "By incorporating the Ni-B layer under thin gold, the process allows nearly complete freedom in the selection of mediumtemperature solders, with primary consideration being bond strength." (The solder selected was 95/5 tin-silver.) Estep further states that, "The limited solubility of nickel in tin permits a good bond between the solder and the Ni-B layer through the thin gold without conductor failure; rework of the bonds can be performed several times without conductor damage. ... Wetting of the conductor is excellent (even after exposure to the high temperatures used in film heat treatment) with a maximum exposure of the hybrid to 280° C for 3 min during reflow." The phosphorus (or boron) content of the electroless nickel deposit provides unique properties that permit its effective use as a barrier layer between the substrate and a thin gold overplate. The barrier layer virtually prevents diffusion of copper into the gold plate and the alloy minimizes the diffusion of nickel through the gold. Electroless nickel deposits provide generally better corrosion protection for the basis metal than other barriers, except when cracking of the deposit occurs. Severe deformation can be the cause of such cracking. Wire bonding to electroless nickel-boron deposits is, in all cases studied by this author, superior to wire bonding to gold. Eutectic diode bonding to electroless nickel is equal or superior to eutectic diode bonding to gold. Soldering to fresh or cleaned electroless nickel-boron and nickel/lowphosphorus deposits is excellent using RMA fluxes. TO-5 headers and pins, formerly plated with gold, are now plated with electroless nickel/8% phosphorus. The transition from gold to electroless nickel among a number of manufacturers is interesting. It was customary to plate TO-5 headers and pins with 2.5 pm (100 gin.) of gold to provide good solderability to the pins and gold/silicon eutectic bonding to the diode chip. Later, this requirement for gold thickness was reduced to 1.5 gm (60 gin.), and the next step was to spot plate only on the areas where attachment was to be made. A subsequent major change in the evolution of the finish was to replace all of the gold plate with electroless nickel/8% phosphorus. The diode is bonded using epoxy, cured, and then the electroless nickel deposit is activated in hydrochloric acid and leads are welded. Some components are soldered. in the Electronics Industry (Jan. 1979). 2. H. Manko, Solders and Soldering, 2nd Ed., McGraw-Hill Book Co., New York, NY, 1979; p. 76. 3. M. Antler, Plating, 57,615 (1970). 4. J. C. Turn and E. L. Owen, Plating, 61, 1015 (1974). 5. D. R. Marx, W. R. Bitler and H. W. Pickering, Plating & Surf. Fin., 64, 69 (1977). 6. E. Philofsky, Solid State Electronics, 13, 1391 (1970). 7. C. W. Horsting, Proc. 10th An. Reliability Physics, IEEE, 155 (1972). 8. G. J. Estep, Elec. Pack. and Prod., 86 (Jan. 1974). 9. B. T. Cox and S. W. Dean Jr., Proc. NEPCON, 111 (1976). References 1. R. G. Baker and R. Sard, Proc. AES 7th Symp. on Plating Metallized ceramic resistors, previously plated with gold, were plated with electroless nickel/3% boron. Later, the manufacturer eliminated prior metallization (molybdenummanganese) by plating a very thin electroless nickel/3% boron strike directly on the ceramic, after appropriate catalyzation of the surface. This was followed by a heavier deposit of electroless nickel-phosphorus alloy. Resistor patterns are evaporated onto the ceramic. Silicon wafers, once finished with gold, are now plated with nickel/0.2% boron from an alkaline electroless solution. Three years of productio n experience by several manufacturers has validated this application. Summary There is increasing use of electroless nickel by the electronics industry as a means of reducing or eliminating gold requirements. For many applications, electroless nickel offers characteristics that allow it to function as well or better than gold, or as an excellent barrier underplate for thin gold deposits. About the Author Donald W. Baudrand, CEF, is vice president, Research and Development, for the Allied-Kelite Products Division of The Richardson Company, 29111 Milford Rd., New Hudson, MI 48165. Mr. Baudrand graduated from Whittler College with a BA degree in chemistry and mathematics. Graduate studies at the University of California at Berkeley consisted of nuclear physics and chemical engineering. He has served Allied-Kelite since 1966 after their acquisition of Electrochemical Laboratories in Los Angeles, a firm he founded and served as president for 14 years. Mr. Baudrand is a member of the AES Detroit Branch. Reprinted Courtesy of Allied-Kelite Products Division The Richardson Company 2400 East Devon Avenue/Des Plaines, Illinois 60018 REPRINTED FROM PLATING & SURFACE FINISHING, DECEMBER, 1981