Final Report : GR/M93383/01: 1/4/2000 to 30/11/2003
Nanofabrication Technology driven by High Speed Devices
Journal Papers
Papers describing work on fabrication of devices for this grant
J1. Characteristics of gated GaAs/Al0.3Ga0.7As heterostructures., Abd-El Mongy, A., Belal, A. A. E., Ali, K., and
Long, A. R.
Physica Status Solidi A-Applied Research, Vol. 187, [Issue 2], pp 575-583. 2001
J2. Mobility variations in ultra-small devices due to discrete charges., Alexander, C., Watling, J. R., and Asenov, A.
Journal of Computational Electronics, Vol. 2, pp 285-289. 2003
J3.
Traversal times and charge confinement for spatially dependent effective masses within semiconductor
heterostructures: the quantum potential approach., Barker, J. R. and Watling, J. R.
Microelectronic Engineering, Vol. 63, [Issue 1-3], pp 97-103. Aug. 2002
J4.
Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InPHEMTs.,
Cao, X. and Thayne, I. G.
Microelectronic Engineering, Vol. 67, [Issue 8], pp 333-337. June 2003
J5.
A non-destructive method for the removal of residual resist in imprinted patterns., Chen, Y., MacIntyre, D. S.,
and Thoms, S.
Microelectronic Engineering, Vol. 67, [Issue 8], pp 245-251. June 2003
J6.
A study of electron forward scattering effects on the footwidth of T-gates fabricated using a bilayer of PMMA
and UVIII., Chen, Y., MacIntyre, D. S., and Thoms, S.
Microelectronic Engineering, Vol. 53, [Issue 1-4], pp 349-352. 2000
J7. Effect of resist sensitivity ratio on T-gate fabrication., Chen, Y., MacIntyre, D. S., and Thoms, S.
Journal Of Vacuum Science & Technology B, Vol. 19, [Issue 6], pp 2494-2498. 2001
J8.
Fabrication of 30 nm T gates using SiNx as a supporting and definition layer., Chen, Y., Edgar, D., Li, X,
MacIntyre, D. S., and Thoms, S.
Journal Of Vacuum Science & Technology B, Vol. 18, [Issue 6], pp 3521-3524. 2000
J9.
Fabrication of ultrashort T-gate using a PMMA/LOR/UVIII resist stack., Chen, Y., MacIntyre, D. S., Boyd, E.,
Moran, D., Thayne, I. G., and Thoms, S.
Microelectronic Engineering, Vol. 67-68, pp 189-195. June 2003
J10. Fabrication of ultrashort T-gate using a PMMA/LOR/UVIII resist stack., Chen, Y., MacIntyre, D. S., Boyd, E.,
Moran, D., Thayne, I. G., and Thoms, S.
Journal Of Vacuum Science & Technology B, Vol. 21, pp 3012-3016. June 2003
J11. High electron mobility transistors fabricated by nanoimprint lithography., Chen, Y., MacIntyre, D. S., Boyd, E.,
Moran, D., Thayne, I. G., and Thoms, S.
Microelectronic Engineering, Vol. 67, [Issue 8], pp 189-195. June 2003
J12. T-gate fabrication using a ZEP520A/UVIII bilayer., Chen, Y., MacIntyre, D. S., and Thoms, S.
Microelectronic Engineering, Vol. 57-8, pp 939-943. 2001
J13. Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped
semiconductors., Cusco, R., Artus, L., Ibanez, J., Blanco, N., Gonzalez-Diaz, G., Rahman, M., and Long, A. R.
Journal Of Applied Physics, Vol. 88, [Issue 11], pp 6567-6570. 2000
J14. Relaxation of a strained quantum well at a cleaved surface., Davies, J. H., Bruls, D. M., Vugs, J.-W. A. M., and
Koenraad, P. M.
Journal Of Applied Physics, Vol. 91, pp 4171-4176. 1 Apr. 2002
J15. Relaxation of a strained quantum well at a cleaved surface., Davies, J. H., Bruls, D. M., Vugs, J.-W. A. M., and
Koenraad, P. M.
Virtual Journal of Nanoscale Science and Technology, Vol. 5, [Issue 14]. 8 Apr. 2002
J16. Enhanced damage due to light in low-damage reactive-ion etching processes., Deng, L. G., Rahman, M., and
Wilkinson, C. D. W.
Applied Physics Letters, Vol. 76, [Issue 20], pp 2871-2873. 2000
J17. Fabrication of on-wafer MMIC compatible integrated NiCr loads., Elgaid, K., Edgar, D. L., Ferguson, S. M.,
Beaumont, S. P., and Thayne, I. G.
Microelectronic Engineering, Vol. 57-8, pp 801-806. 2001
J18. Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates., Elgaid, K.,
Mccloy, D. A., and Thayne, I. G.
Microelectronic Engineering, Vol. 67, [Issue 8], pp 417-421. June 2003
J19. Arrays of nano-dots for cellular engineering., Gadegaard, N., Thoms, S., MacIntyre, D. S., McGhee, K.,
Gallagher, J., Casey, B., and Wilkinson, C. D. W.
Microelectronic Engineering, Vol. 67, [Issue 8], pp 162-168. June 2003
J20. 3D Parallel simulation of fluctuations effects on pHEMTs., Garcia-Lourelo, A. J., Kalna, K., and Asenov, A.
Journal of Computational Electronics, Vol. 2, pp 369-373. 2003
J21. Gate tunnelling and impact ionisation in sub 100nm PHEMTs., Kalna, K. and Asenov, A.
The Institute of Electronics, Information and Communication Engineers IEICE Transactions on Electronics, Vol. E86C, pp 330-335. 2003
J22. Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation
study., Kalna, K. and Asenov, A.
Mathematics and Computers in Simulation. 2002
J23. Nonequilibrium and ballistic transport, and backscattering in decanano MOSFET's: A Monte Carlo simulation
study., Kalna, K. and Asenov, A.
Mathematics and Computers in Simulation, Vol. 62, pp 357-366. 2003
J24. Nonequilibrium transport in scaled high electron mobility transistors., Kalna, K. and Asenov, A.
Semiconductor Science And Technology, Vol. 17, pp 579-584. 2002
J25. Quantum corrections in the Monte Carlo simulations of scaled PHEMTs with multiple delta doping., Kalna, K.
and Asenov, A.
Journal of Computational Electronics, Vol. 1, pp 257-261. 2002
J26. Scaling of pHEMTs to decanano dimensions., Kalna, K., Asenov, A., Elgaid, K., and Thayne, I. G.
VLSI Design, Vol. 13, [Issue 1-4], pp 435-439. 2001
J27. Scaling of pseudomorphic high electron mobility transistors to decanano dimensions., Kalna, K., Roy, S., Asenov,
A., Elgaid, K., and Thayne, I. G.
Solid State Electronics, Vol. 46, [Issue 5], pp 631-638. 1 May 2002
J28. Simulation study of high performance III-V MOSFETs for digital applications., Kalna, K., Yang, L., and Asenov,
A.
Journal of Computational Electronics, Vol. 2, pp 341-345. 2003
J29. Composition profiling at the atomic scale in III-V nanostructures by cross-sectional STM., Koenraad, P. M.,
Bruls, D. M., Davies, J. H., Gill, S. P. A., Long, F., Hopkinson, M., Skolnick, M., and Wolter, J. H.
Physica E-Low-Dimensional Systems & Nanostructures, Vol. 17, [Issue 1-4], pp 526-532. Apr. 2003
J30. Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by
SiCl4/SiF4/O-2 reactive ion etch., Li, X., Elgaid, K., McLelland, H., and Thayne, I. G.
Microelectronic Engineering, Vol. 57-8, pp 633-640. 2001
J31. Fabrication of T gate structures by nanoimprint lithography., MacIntyre, D. S., Chen, Y., Lim, D., and Thoms, S.
Journal Of Vacuum Science & Technology B, Vol. 19, [Issue 6], pp 2797-2800. 2001
J32. Quantum electron beam probe of sidewall dry-etch damage., Rahman, M., Williamson, J. G., Mathieson, K.,
Dick, G., Brown, M. J., Duffy, S., and Wilkinson, C. D. W.
Microelectronic Engineering, Vol. 53, [Issue 1-4], pp 371-374. 2000
J33. Quantum aspects of resolving discrete charges in atomistic device simulation., Roy, G., Brown, A. R., Asenov,
A., and Roy, S.
Journal of Computational Electronics, Vol. 2, pp 323-327. 2003
J34. Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron
densities and measurement of InAlAs surface potential., Skuras, E., Pennelli, G., Long, A. R., and Stanley, C. R.
Journal Of Vacuum Science & Technology B, Vol. 19, [Issue 4], pp 1524-1528. 2001
J35. Can density-gradient approach describe the source-to-drain tunneling in decanano double gate devices., Watling,
J. R., Brown, A. R., and Asenov, A.
Journal of Computational Electronics, Vol. 1, pp 289-293. 2002
J36. Issues in etching compound and Si-based devices., Wilkinson, C. D. W., Deng, L. G., and Rahman, M.
Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Vol. 41, [Issue 6B], pp
4261-4266. 2002
J37. The use of materials patterned on a nano- and micro-metric scale in cellular engineering., Wilkinson, C. D. W.,
Riehle, M., Wood, M., Gallagher, J., and Curtis, A. S. G.
Materials Science & Engineering C., Biomimetic.and Supramolecular.Systems., Vol. C19, pp 263-269. 2 Jan. 2002
J38. Accurate non-uniform transmission line model and its application to the de-embedding of on-wafer
measurements., Young, P. R., McPherson, D. S., Chrisostomidis, C., Elgaid, K., Thayne, I. G., Lucyszyn, S., and
Robertson, I. D.
IEEE Proceedings-Microwaves Antennas And Propagation, Vol. 148, [Issue 3], pp 153-156. 2001
Papers describing work that was enabled by the grant
J39.
Commensurability oscillations on lateral surface superlattices with large periods., Abd-El Mongy, A., Long, A.
R., Belal, E., and Ali, K.
Thin Solid Films, Vol. 396, [Issue 1-2], pp 219-224. 2001
J40.
Magnetization reversal of patterned spin-tunnel junction material: A transmission electron microscopy study.,
Ardhuin, H., Chapman, J. N., Aitchison, P. R., Gillies, M. F., Kirk, K. J., and Wilkinson, C. D. W.
Journal Of Applied Physics, Vol. 88, [Issue 5], pp 2760-2765. 2000
J41.
3D statistical simulation of intrinsic fluctuations in decanano MOSFETs introduced by discrete dopants, oxide
thickness fluctuations and LER., Asenov, A.
Simulation Of Semiconductor Processes And Devices 2001, pp 162-169. 2001
J42.
Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study., Asenov,
A., Balasubramaniam, R., Brown, A. R., and Davies, J. H.
Superlattices And Microstructures, Vol. 27, [Issue 5-6], pp 411-416. 2000
J43.
Implications of imperfect interfaces and edges in ultra-small MOSFET characteristics., Asenov, A., Kaya, S.,
and Brown, A. R.
Physica Status Solidi B-Basic Research, Vol. 233, [Issue 1], pp 101-112. 2002
J44.
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to
quantum effects: A 3- D density-gradient simulation study., Asenov, A., Slavcheva, G., Brown, A. R., Davies, J.
H., and Saini, S.
IEEE Transactions On Electron Devices, Vol. 48, [Issue 4], pp 722-729. 2001
J45.
Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness., Asenov,
A., Kaya, S., and Brown, A. R.
IEEE Transactions On Electron Devices, Vol. 50, [Issue 5], pp 1254-1260. May 2003
J46.
Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations., Asenov,
A., Kaya, S., and Davies, J. H.
IEEE Transactions On Electron Devices, Vol. 49, pp 112-119. Jan. 2002
J47.
Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient
simulation study., Asenov, A., Kaya, S., Davies, J. H., and Saini, S.
Superlattices And Microstructures, Vol. 28, [Issue 5-6], pp 507-515. 2000
J48.
Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm
MOSFET's with ultrathin gate oxide., Asenov, A. and Saini, S.
IEEE Transactions On Electron Devices, Vol. 47, [Issue 4], pp 805-812. 2000
J49.
Quantum corrections to the 'atomistic' MOSFET simulations., Asenov, A., Slavcheva, G., Kaya, S., and
Balasubramaniam, R.
VLSI Design, Vol. 13, [Issue 1-4], pp 15-+. 2001
J50.
Quantum corrections in the simulation of decanano MOSFETs., Asenov, A., Brown, A. R., and Watling, J. R.
Solid-State Electronics, Vol. 47, [Issue 7], pp 1141-1145. July 2003
J51.
Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: A 3D 'atomistic' simulation study.,
Asenov, A., Balasubramaniam, R., Brown, A. R., Davies, J. H., and Saini, S.
International Electron Devices Meeting 2000, Technical Digest, pp 279-282. 2000
J52.
RTS amplitudes in decananometer MOSFETs: 3-D Simulation Study., Asenov, A., Balasubramaniam, R.,
Brown, A. R., and Davies, J. H.
IEEE Transactions On Electron Devices, Vol. 50, [Issue 3], pp 839-845. Mar. 2003
J53.
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs., Asenov, A.,
Brown, A. R., Davies, J. H., Kaya, S., and Slavcheva, G.
IEEE Transactions On Electron Devices, Vol. 50, [Issue 9], pp 1837-1852. Sept. 2003
J54.
Statistical 3D 'atomistic' simulation of decanano MOSFETs., Asenov, A., Slavcheva, G., Brown, A. R.,
Balasubramaniam, R., and Davies, J. H.
Superlattices And Microstructures, Vol. 27, [Issue 2-3], pp 215-227. 2000
J55.
A fast algorithm for the study of wave-packet scattering at disordered interfaces., Barker, J. R., Watling, J. R.,
and Wilkins, R. C. W.
VLSI Design, Vol. 13, [Issue 1-4], pp 199-204. 2001
J56.
A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures
in the presence of vortices., Barker, J. R.
VLSI Design, Vol. 13, [Issue 1-4], pp 237-244. 2001
J57.
A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor
devices using non-self-averaged Green functions., Barker, J. R.
Physica E-Low-Dimensional Systems & Nanostructures, Vol. 19, [Issue 1-2], pp 62-70. July 2003
J58.
Green function simulation study of non self-averaging scattering processes atomistic semiconductor devices.,
Barker, J. R.
Journal of Computational Electronics, Vol. 2, pp 153-161. 2003
J59.
Normal vortex states and their application in mesoscopic semiconductor devices., Barker, J. R.
Microelectronic Engineering, Vol. 63, [Issue 1-3], pp 223-231. Aug. 2002
J60.
On the completeness of quantum hydrodynamics., Barker, J. R.
Journal of Computational Electronics, Vol. 1, pp 17-21. 2002
J61.
On the current and density representation of Many-body quantum transport theory., Barker, J. R.
Journal of Computational Electronics, Vol. 1, [Issue 23], pp 26. 2002
J62.
On the use of Bohm trajectories for interpreting quantum flows in quantum dot structures., Barker, J. R., Akis,
R., and Ferry, D. K.
Superlattices And Microstructures, Vol. 27, [Issue 5-6], pp 319-325. 2000
J63.
Quantum potential corrections for spatially dependent effective masses with application to charge confinement
at heterostructure interfaces., Barker, J. R.
Journal of Computational Electronics, Vol. 1, [Issue 279], pp 282. 2002
J64.
Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices.,
Barker, J. R. and Watling, J. R.
VLSI Design, Vol. 13, [Issue 1-4], pp 453-458. 2001
J65.
Three-dimensional modelling of dissipative quantum transport in quantum dots and atomistic scale devices
using nonHermitian generalized potentials., Barker, J. R. and Watling, J. R.
Superlattices And Microstructures, Vol. 27, [Issue 5-6], pp 347-351. 2000
J66.
A non pertubative model of surface roughness scattering for Monte Carlo simulation of relaxed silicon nMOSFETs., Borici, M., Watling, J. R., Wilkins, R. C. W., Yang, L., and Barker, J. R.
Journal of Computational Electronics, Vol. 2, pp 163-167. 2003
J67.
A 3-D atomistic study of archetypal double gate MOSFET structures., Brown, A. R., Watling, J. R., and
Asenov, A.
Journal of Computational Electronics, Vol. 1, pp 165-169. 2002
J68.
Wavebreaking on CMOS interconnect., Chai, T. C., Lister, K. A., and Cumming, D. R. S.
Electronic Letters, Vol. 38, [Issue 16], pp 878-879. 2002
J69.
Scanning Hall probe microscopy on an atomic force microscope tip., Chong, B. K., Zhou, H., Mills, G.,
Donaldson, L., and Weaver, J. M. R.
Journal Of Vacuum Science & Technology A-Vacuum Surfaces And Films, Vol. 19, [Issue 4], pp 1769-1772. 2001
J70.
Importance of symmetry breaking in two-dimensional lateral- surface superlattices., Chowdhury, S., Emeleus,
C. J., Milton, B., Skuras, E., Long, A. R., Davies, J. H., Pennelli, G., and Stanley, C. R.
Physical Review B, Vol. 62, [Issue 8], pp R4821-R4824. 2000
J71.
Switching of guiding center-drift direction in asymmetric two- dimensional lateral surface superlattices.,
Chowdhury, S., Skuras, E., Emeleus, C. J., Long, A. R., Davies, J. H., Pennelli, G., and Stanley, C. R.
Physical Review B, Vol. 6315, [Issue 15], pp art-153306. 2001
J72.
Transport of electrons in two-dimensional square and rectangular lateral surface superlattices., Chowdhury, S.,
Long, A. R., Skuras, E., Emeleus, C. J., and Davies, J. H.
Journal Of The Korean Physical Society, Vol. 39, [Issue 3], pp 529-533. 2001
J73.
Coherent manipulation of semiconductor quantum bits with terahertz radiation., Cole, B. E., Williams, J. B.,
King, B. T., Sherwin, M. S., and Stanley, C. R.
Nature, Vol. 410, [Issue 6824], pp 60-63. 2001
J74.
Odour mapping using microresistor and piezo-electric sensor pairs., Cui, L., Swann, M. J., Glidle, A., Barker,
J. R., and Cooper, J. M.
Sensors And Actuators B-Chemical, Vol. 66, [Issue 1-3], pp 94-97. 2000
J75.
Fabrication of microelectrode arrays for neural measurements from retinal tissue., Cunningham, W.,
Mathieson, K., McEwan, F. A., Blue, A., McGeachy, R., McLeod, J. A., Morris-Ellis, C., O'Shea, V, Smith, K.
M., Litke, A., and Rahman, M.
Journal Of Physics D-Applied Physics, Vol. 34, [Issue 18], pp 2804-2809. 2001
J76.
Performance of bulk SiC radiation detectors., Cunningham, W., Gouldwell, A., Lamb, G., Scott, J., Mathieson,
K., Roy, P., Bates, R., Thornton, P., Smith, K. M., Cusco, R., Glaser, M., and Rahman, M.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 487, [Issue 1-2], pp 33-39. 2002
J77.
Probing bulk and surface damage in widegap semiconductors., Cunningham, W., Gouldwell, A., Lamb, G.,
Roy, P., Scott, J., Mathieson, K., Bates, R., Smith, K. M., Cusco, R., Watson, I. M., Glaser, M., and Rahman,
M.
Journal Of Physics D-Applied Physics, Vol. 34, [Issue 18], pp 2748-2753. 2001
J78.
Substratum nanotopography and the adhesion of biological cells., Curtis, A. S. G., Casey, B., Gallagher, J. O.,
Pasqui, D., Wood, M. A., and Wilkinson, C. D. W.
Biophysical Chemistry, Vol. 94, pp 275-283. 25 Dec. 2001
J79.
Nucleus alignment and cell signaling in fibroblasts: response to a micro-grooved topography., Dalby, M. J.,
Riehle, M. O., Yarwood, S. J., Wilkinson, C. D. W., and Curtis, A. S. G.
Experimental Cell Research, Vol. 284, [Issue 2], pp 274-282. 1 Apr. 2003
J80.
Elastic field in a semi-infinite solid due to thermal expansion or a coherently misfitting inclusion., Davies, J. H.
Journal of Applied Mechanics-Transactions of the Asme, Vol. 70, [Issue 5], pp 655-660. Sept. 2003
J81.
Ballistic electron transport in stubbed quantum waveguides: Experiment and theory., Debray, P., Raichev, O.
E., Vasilopoulos, P., Rahman, M., Perrin, R., and Mitchell, W. C.
Physical Review B, Vol. 61, [Issue 16], pp 10950-10958. 2000
J82.
Experimental observation of Coulomb drag in parallel ballistic quantum wires., Debray, P., Vasilopoulos, P.,
Raichev, O. E., Perrin, R., Rahman, M., and Mitchel, W. C.
Physica E, Vol. 6, [Issue 1-4], pp 694-697. 2000
J83.
A tunable photonic crystal filter for terahertz frequency applications., Drysdale, T. D., Blaikie, R. J., and
Cumming, D. R. S.
Terahertz for Military and Security Applications, Vol. 5070, pp 89-97. 2003
J84.
Artificial dielectric devices for variable polarization compensation at millimeter and submillimeter
wavelengths., Drysdale, T. D., Blaikie, R. J., Chong, H. M. H., and Cumming, D. R. S.
IEEE Transactions on Antennas and Propagation, Vol. 51, [Issue 11], pp 3072-3079. Nov. 2003
J85.
Calculated and measured transmittance of a tunable metallic photonic crystal filter for terahertz frequencies.,
Drysdale, T. D., Blaikie, R. J., and Cumming, D. R. S.
Applied Physics Letters, Vol. 83, [Issue 26], pp 5362-5364. 2003
J86.
Metallic tuneable photonic crystal filter for terahertz frequencies., Drysdale, T. D., Mills, G., Ferguson, S. M.,
Blaikie, R. J., and Cumming, D. R. S.
Journal Of Vacuum Science & Technology B, Vol. 21, [Issue 6], pp 2878-2882. 2003
J87.
Variable polarisation compensator using artificial dielectrics for millimetre and submillimetre waves.,
Drysdale, T. D., Chong, H. M. H., Blaikie, R. J., and Cumming, D. R. S.
Electronics Letters, Vol. 37, [Issue 3], pp 149-150. 2001
J88.
Magnetoresistance oscillations due to internal Landau band structure of a two-dimensional electron system in a
periodic magnetic field., Edmonds, K. W., Gallagher, B. L., Main, P. C., Overend, N., Wirtz, R., Nogaret, A.,
Henini, M., Marrows, C. H., Hickey, B. J., and Thoms, S.
Physical Review B, Vol. 6404, [Issue 4], pp art-041303. 2001
J89.
Magnetoresistance oscillations in a periodic magnetic field due to internal Landau band structure., Edmonds,
K. W., Gallagher, B. L., Main, P. C., Nogaret, A., Henini, M., Marrows, C. H., and MacIntyre, D. S.
Physica E, Vol. 12, pp 1-4. Jan. 2002
J90.
2D electron gas in non-uniform magnetic fields., Gallagher, B. L., Kubrak, V, Rushforth, A. W., Neumann, A.
C., Edmonds, K. W., Main, P. C., Henini, M., Marrows, C. H., Hickey, B. J., Thoms, S., and Dahlbarg, D. E.
Acta Physica Polonica A, Vol. 98, [Issue 3], pp 217-230. 2000
J91.
Electrical transport of 2D electrons in non-uniform magnetic fields., Gallagher, B. L., Kubrak, V, Rushforth, A.
W., Neumann, A. C., Edmonds, K. W., Main, P. C., Henini, M., Marrows, C. H., Hickey, B. J., and Thoms, S.
Physica E, Vol. 11, [Issue 2-3], pp 171-176. 2001
J92.
3D Parallel simulation of fluctuations effects on pHEMTs., Garcia-Lourelo, A. J., Kalna, K., and Asenov, A.
Journal of Computational Electronics, Vol. 2, pp 369-373. 2003
J93.
Commensurability oscillations due to pinned and drifting orbits in a two-dimensional lateral surface
superlattice., Grant, D. E., Long, A. R., and Davies, J. H.
Physical Review B, Vol. 61, [Issue 19], pp 13127-13130. 2000
J94.
Highly localized thermal, mechanical, and spectroscopic characterization of polymers using miniaturized
thermal probes., Hammiche, A., Bozec, L., Conroy, M., Pollock, H. M., Mills, G., Weaver, J. M. R., Price, D.
M., Reading, M., Hourston, D. J., and Song, M.
Journal Of Vacuum Science & Technology B, Vol. 18, [Issue 3], pp 1322-1332. 2000
J95.
Two new microscopical variants of thermomechanical modulation: scanning thermal expansion microscopy
and dynamic localized thermomechanical analysis., Hammiche, A., Price, D. M., Dupas, E., Mills, G., Kulik,
A., Reading, M., Weaver, J. M. R., and Pollock, H. M.
Journal Of Microscopy-Oxford, Vol. 199, pp 180-190. 2000
J96.
Quasi-ballistic transport of 2D electrons through magnetic barriers., Hong, J., Kubrak, V., Edmonds, K. W.,
Neumann, A. C., Gallagher, B. L., Main, P. C., Henini, M., Marrows, C. H., Hickey, B. J., and Thoms, S.
Physica E, Vol. 12, [Issue 1-4], pp 229-232. 2002
J97.
Heat conduction nanocalorimeter for pl-scale single cell measurements., Johannessen, E. A., Weaver, J. M. R.,
Cobbold, P. H., and Cooper, J. M.
Applied Physics Letters, Vol. 80, [Issue 11], pp 2029-2031. 18 Mar. 2002
J98.
Indication of velocity overshoot in strained Si0.8Ge0.2 p- channel MOSFETs., Kaya, S., Zhao, Y. P., Watling,
J. R., Asenov, A., Barker, J. R., Ansaripour, G., Braithwaite, G., Whall, T. E., and Parker, E. H. C.
Semiconductor Science And Technology, Vol. 15, [Issue 6], pp 573-578. 2000
J99.
On the breakdown of Universal mobility curves: a Brownian 3D simulation networks., Kaya, S., Asenov, A.,
and Roy, S.
Journal of Computational Electronics, Vol. 1, pp 375-379. 2002
J100.
Imaging magnetic domain structure in sub-500 nm thin film elements., Kirk, K. J., McVitie, S., Chapman, J.
N., and Wilkinson, C. D. W.
Journal Of Applied Physics, Vol. 89, [Issue 11], pp 7174-7176. 2001
J101.
Interactions and switching field distributions of nanoscale magnetic elements., Kirk, K. J., Chapman, J. N.,
McVitie, S., Aitchison, P. R., and Wilkinson, C. D. W.
Journal Of Applied Physics, Vol. 87, [Issue 9], pp 5105-5107. 2000
J102.
An electron emission model for use with 3D electromagnetic finite element simulation., Knox, A. R., Asenov,
A., and Lowe, A. C.
Solid-State Electronics, Vol. 45, [Issue 6], pp 841-851. 2001
J103.
Giant magnetoresistance induced by magnetic barriers., Kubrak, V., Edmonds, K. W., Neumann, A. C.,
Gallagher, B. L., Main, P. C., Henini, M., Marrows, C. H., Hickey, B. J., and Thoms, S.
IEEE Transactions On Magnetics, Vol. 37, [Issue 4], pp 1992-1994. 2001
J104.
Interactions in magnetic arrays for storage and computation., Kundrotaite, A., Rahman, M., Aitchison, P. R.,
and Chapman, J. N.
Microelectronic Engineering, Vol. 57-8, pp 975-979. 2001
J105.
Efficient direct locking of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 mu m., Lee, H.
K., Loyo-Maldonado, V, Qiu, B. C., Lee, K. L., Shu, C., Pinches, S., Thayne, I. G., Bryce, A. C., and Marsh, J.
H.
IEEE Photonics Technology Letters, Vol. 14, [Issue 8], pp 1049-1051. 1 Jan. 2002
J106.
Asymmetric magnetization reversal of the free layer of a spin- valve., Lim, C. K., Chapman, J. N., Rahman,
M., Johnston, A. B., and O'Donnell, D. O.
Journal Of Physics D-Applied Physics, Vol. 35, [Issue 19], pp 2344-2351. 2002
J107. Study of RF linearity in sub-50nm MOSFETs using simulations., Ma, W., Kaya, S., and Asenov, A.
Journal of Computational Electronics, Vol. 2, pp 347-352. 2003
J108.
Nonlinear hole transport through a submicron-size channel., Makarovsky, O., Neumann, A., Martin, A. M.,
Turyanska, L., Patane, A., Eaves, L., Henini, M., Main, P. C., Thoms, S., Wilkinson, C. D. W., Maude, D. K.,
and Portal, J. C.
Applied Physics Letters, Vol. 82, [Issue 6], pp 925-927. 10 Feb. 2003
J109.
Nonlinear hole transport through a submicron-size channel., Makarovsky, O., Neumann, A., Martin, A. M.,
Turyanska, L., Patane, A., Eaves, L., Henini, M., Main, P. C., Thoms, S., Wilkinson, C. D. W., Maude, D. K.,
and Portal, J. C.
Applied Physics Letters, Vol. 82, [Issue 6], pp 925-927. 10 Feb. 2003
J110.
Quantum Hall effect breakdown: can the bootstrap heating and inter-Landau-level scattering models be
reconciled?, Makarovsky, O., Neumann, A., Dickinson, L. A., Eaves, L., Main, P. C., Henini, M., Thoms, S.,
and Wilkinson, C. D. W.
Physica E, Vol. 12, pp 178-181. Jan. 2002
J111.
Active pixel detector for ion beam profiling., Marchal, J., Passmore, M. S., Abdalla, M., van den Berg, J.,
Nejim, A., Frojdh, C., O'Shea, V., Smith, K. M., and Rahman, M.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 487, [Issue 1-2], pp 224-231. 2002
J112.
Charge sharing in silicon pixel detectors., Mathieson, K., Passmore, M. S., Seller, P., Prydderch, M. L., O'Shea,
V., Bates, R. L., Smith, K. M., and Rahman, M.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 487, [Issue 1-2], pp 113-122. 2002
J113.
Simulated and experimental results from a room temperature silicon X-ray pixel detector., Mathieson, K.,
Bates, R., Iles, G. M., Manolopoulos, S., O'Shea, V, Passmore, S., Prydderch, M. L., Rahman, M., Seller, P.,
Smith, K. M., Thomas, S. L., Watt, J., and Whitehill, C.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 460, [Issue 1], pp 191-196. 2001
J114.
Simulation of GaAs 3-D pixel detectors., Mathieson, K., Bates, R., Meikle, A., O'Shea, V, Passmore, M. S.,
Rahman, M., and Smith, K. M.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 466, [Issue 1], pp 194-201. 2001
J115.
The simulation of charge sharing in semiconductor X-ray pixel detectors., Mathieson, K., Bates, R., O'Shea, V.,
Passmore, M. S., Rahman, M., Smith, K. M., Watt, J., and Whitehill, C.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 477, [Issue 1-3], pp 191-197. 2002
J116. Brownian ionic channel simulation., Millar, C., Asenov, A., and Roy, S.
Journal of Computational Electronics, Vol. 2, pp 257-262. 2003
J117. Excessive over-relaxation methid, for multigride Poisson solvers., Millar, C., Asenov, A., and Watling, J. R.
Journal of Computational Electronics, Vol. 1, pp 341-345. 2002
J118.
Generic particle-mesh framework for the simulation of ionic channels., Millar, C., Asenov, A., Roy, S., and
Cooper, J. M.
Journal of Computational Electronics, Vol. 1, pp 405-409. 2002
J119.
Modulation of Landau levels by a one-dimensional periodic potential., Milton, B., Emeleus, C. J., Lister, K.,
Davies, J. H., and Long, A. R.
Physica E, Vol. 6, [Issue 1-4], pp 555-557. 2000
J120.
Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors
with thin silicon capping layers., Palmer, M. J., Braithwaite, G., Grasby, T. J., Phillips, P. J., Prest, M. J.,
Parker, E. H. C., Whall, T. E., Parry, C. P., Waite, A. M., Evans, A. G. R., Roy, S., Watling, J. R., Kaya, S., and
Asenov, A.
Applied Physics Letters, Vol. 78, [Issue 10], pp 1424-1426. 2001
J121.
Characterisation of a single photon counting pixel detector., Passmore, M. S., Bates, R., Mathieson, K., O'Shea,
V, Rahman, M., Seller, P., and Smith, K. M.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 466, [Issue 1], pp 202-208. 2001
J122.
Technology development of 3D detectors for high-energy physics and imaging., Pellegrini, G., Roy, P., Bates,
R., Jones, D., Mathieson, K., Melone, J., O'Shea, V., Smith, K. M., Thayne, I. G., Thornton, P., Linnros, J., and
Rodden, W.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 487, [Issue 1-2], pp 19-26. 2002
J123.
Technology development of 3D detectors for high-energy physics and imaging., Pellegrini, G., Roy, P., Bates,
R., Jones, D., Mathieson, K., Melone, J., O'Shea, V, Smith, K. M., Thayne, I. G., Thornton, P., Linnros, J.,
Rodden, W., and Rahman, M.
Nuclear.Instruments.& Methods in Physics Research., Section.A.Accelerators., Spectrometers., Detectors.and
Associated.Equipment., Vol. 486, [Issue 1-2], pp 19-26. 11 July 2002
J124.
Technology development of 3D detectors for medical imaging., Pellegrini, G., Roy, P., Al Ajili, A., Bates, R.,
Haddad, L., Horn, M., Mathieson, K., Melone, J., O'Shea, V., Smith, K. M., Thayne, I. G., and Rahman, M.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 504, [Issue 1-3], pp 149-153. 21 May 2003
J125.
Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs., Prest, M. J., Palmer, M.
J., Grasby, T. J., Phillips, P. J., Mironov, O. A., Parker, E. H. C., Whall, T. E., Waite, A. M., Evans, A. G. R.,
Watling, J. R., Asenov, A., and Barker, J. R.
Materials Science And Engineering B-Solid State Materials For Advanced Technology, Vol. 89, [Issue 1-3], pp 444448. 2002
J126.
Transconductance, carrier mobility and 1/f noise in Si/Si/sub 0.64/Ge/sub 0.36//Si pMOSFETs., Prest, M. J.,
Palmer, M. J., Grasby, T. J., Phillips, P. J., Mironov, O. A., Parker, E.-H. C., Whall, T. E., Waite, A. M., Evans,
A.-G. R., Watling, J. R., Asenov, A., and Barker, J. R.
Materials Science & Engineering B Solid.State.Materials for.Advanced.Technology, Vol. B89, pp 1-3. Feb. 2002
J127. Damage in III-V semiconductors from very low-energy process plasmas., Rahman, M.
Defects And Diffusion In Semiconductors, Vol. 183-1, pp 61-75. 2000
J128.
Minimization of dry etch damage in III-V semiconductors., Rahman, M., Deng, L. G., van den Berg, J., and
Wilkinson, C. D. W.
Journal Of Physics D-Applied Physics, Vol. 34, [Issue 18], pp 2792-2797. 2001
J129.
Studies of damage in low-power reactive-ion etching of III-V semiconductors., Rahman, M., Deng, L. G.,
Wilkinson, C. D. W., and van den Berg, J. A.
Journal Of Applied Physics, Vol. 89, [Issue 4], pp 2096-2108. 2001
J130. Topographic effects in low-energy radiation damage., Rahman, M. and Mathieson, K.
Applied Physics Letters, Vol. 77, [Issue 9], pp 1322-1324. 2000
J131.
A methodology for introducing atomistic parameter fluctuations into compact device models for circuit
simulation., Roy, S., Cheng, B. J., Roy, G., and Asenov, A.
Journal of Computational Electronics, Vol. 2, pp 427-431. 2003
J132.
Application of quasi-3D and 3D MOSFET simulations in the atomistic regime., Roy, S., Lee, A., Brown, A. R.,
and Asenov, A.
Journal of Computational Electronics, Vol. 2, pp 423-426. 2003
J133.
RF analysis methodology for Si and SiGeFETs based on transient Monte Carlo simulation., Roy, S., Kaya, S.,
Asenov, A., and Barker, J. R.
Ieice Transactions On Electronics, Vol. E83C, [Issue 8], pp 1224-1227. 2000
J134.
Anisotropy effects in two-dimensional magnetic superlattices., Skuras, E., Long, A. R., Chowdhury, S., Boyd,
E., Rahman, M., Kirk, K. J., and Davies, J. H.
Journal Of The Korean Physical Society, Vol. 39, [Issue 3], pp 544-548. 2001
J135.
Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional
electron gas., Skuras, E., Long, A. R., Chowdhury, S., Rahman, M., Kirk, K. J., and Davies, J. H.
Journal Of Applied Physics, Vol. 90, [Issue 5], pp 2623-2625. 2001
J136.
Potential fluctuations in metal-oxide-semiconductor field-effect transistors generated by random impurities in
the depletion layer., Slavcheva, G., Davies, J. H., Brown, A. R., and Asenov, A.
Journal Of Applied Physics, Vol. 91, pp 4326-4334. Apr. 2002
J137.
Fermi-edge singularities in a one-dimensional electron system in magnetic field., Stallard, W. G., Plaut, A. S.,
Thoms, S., Holland, M. C., Beaumont, S. P., Stanley, C. R., and Hopkinson, M.
Solid State Communications, Vol. 119, [Issue 1], pp 55-58. 2001
J138.
Fabrication of metallic tunnel junctions for the scanning single electron transistor atomic force microscope.,
Steinmann, P., Lister, K. A., and Weaver, J. M. R.
Journal Of Vacuum Science & Technology B, Vol. 21, [Issue 5], pp 2138-2141. Oct. 2003
J139.
On the mobility extraction for HMOSFETs., Straube, U. N., Evans, A. G. R., Braithwaite, G., Kaya, S.,
Watling, J., and Asenov, A.
Solid-State Electronics, Vol. 45, [Issue 3], pp 527-529. 2001
J140.
Distribution of adsorbed molecules in electronic nose sensors., Swann, M. J., Glidle, A., Gadegaard, N., Cui,
L., Barker, J. R., and Cooper, J. M.
Physica B, Vol. 276, pp 357-358. 2000
J141.
Characterisation of semiconductor materials for ionising radiation detectors., Vaitkus, J., Gaubas, E.,
Jasinskaite, R., Juska, G., Kazukauskas, V., Puras, R., Rahman, M., Sakalauskas, S., and Smith, K.
Nuclear Instruments & Methods In Physics Research Section A- Accelerators Spectrometers Detectors And Associated
Equipment, Vol. 487, [Issue 1-2], pp 1-12. 2002
J142.
Degeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETs., Watling, J. R.,
Yang, L., Borici, M., Barker, J. R., and Asenov, A.
Journal of Computational Electronics, Vol. 2, pp 475-479. 2003
J143.
Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs., Watling, J. R., Zhao, Y. P.,
Asenov, A., and Barker, J. R.
VLSI Design, Vol. 13, [Issue 1-4], pp 169-173. 2001
J144.
Quantum corrections in 3-D drift diffusion simulations of decanano MOSFETs using an effective potential.,
Watling, J. R., Brown, A. R., Asenov, A., and Ferry, D. K.
Simulation Of Semiconductor Processes And Devices 2001, pp 82-85. 2001
J145.
Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices.,
Watling, J. R., Barker, J. R., and Asenov, A.
VLSI Design, Vol. 13, [Issue 1-4], pp 441-446. 2001
J146. Patterning collodial nanotopographies., Wood, M. A., Riehle, M., and Wilkinson, C. D. W.
Nanotechnology, Vol. 13, [Issue 5], pp 605-609. Oct. 2002
J147.
Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETs., Yang, L., Watling, J. R., Borici, M.,
Wilkins, R. C. W., Asenov, A., Barker, J. R., and Roy, S.
Journal of Computational Electronics, Vol. 2, pp 363-368. 2003
J148.
Passive harmonic modelocking in monolithic compound-cavity laser diodes., Yanson, D. A., Street, M. W.,
Avrutin, E. A., McDougall, S. D., Thayne, I. G., and Marsh, J. H.
Electronics Letters, Vol. 36, [Issue 23], pp 1930-1931. 2000
J149.
Terahertz-frequency mode-locking of monolithic compound-cavity laser diodes., Yanson, D. A., Street, M. W.,
McDougall, S. D., Thayne, I. G., Marsh, J. H., Bryce, A. C., and Avrutin, E. A.
2002 IEEE /LEOS Annual Meeting Conference Proceedings, Vols 1 And 2, pp 710-711. 2002
J150.
Terahertz frequency mode-locking of monolithic compound-cavity laser diodes incorporating photonicbandgap reflectors., Yanson, D. A., Street, M. W., McDougall, S. D., Thayne, I. G., Marsh, J. H., and Avrutin,
E. A.
2001 International Topical Meeting On Microwave Photonics, Technical Digest, pp 25-28. 2001
J151.
Terahertz repetition frequencies from harmonic mode-locked monolithic compound-cavity laser diodes.,
Yanson, D. A., Street, M. W., McDougall, S. D., Thayne, I. G., Marsh, J. H., and Avrutin, E. A.
Applied Physics Letters, Vol. 78, [Issue 23], pp 3571-3573. 2001
J152.
Ultrafast harmonic mode-locking of monolithic compound-cavity laser diodes incorporating photonic-bandgap
reflectors., Yanson, D. A., Street, M. W., McDougall, S. D., Thayne, I. G., Marsh, J. H., and Avrutin, E. A.
Photonics Technology In The 21St Century, Vol. 4598, pp 133-147. 2001
J153.
Ultrafast harmonic mode-locking of monolithic compound-cavity laser diodes incorporating photonic-bandgap
reflectors., Yanson, D. A., Street, M. W., McDougall, S. D., Thayne, I. G., Marsh, J. H., and Avrutin, E. A.
IEEE Journal Of Quantum Electronics, Vol. 38, [Issue 1], pp 1-11. 1 Jan. 2002
J154.
Influence of end shape, temperature, and time on the switching of small magnetic elements., Yi, G., Aitchison,
P. R., Doyle, W. D., Chapman, J. N., and Wilkinson, C. D. W.
Journal Of Applied Physics, Vol. 92, pp 6087-6093. 15 Nov. 2002
J155.
Ground-state transition in few-electron quantum dots observed by magnetophotoluminescence., Zhang, Y. H.,
Plaut, A. S., Weis, J., Harbison, J. P., Florez, L. T., Holland, M. C., and Stanley, C. R.
Physical Review B, Vol. 68, [Issue 7]. 15 Aug. 2003
J156.
Drift diffusion and hydrodynamic simulations of Si/SiGe p- MOSFETs., Zhao, Y. P., Watling, J. R., Kaya, S.,
Asenov, A., and Barker, J. R.
Materials Science And Engineering B-Solid State Materials For Advanced Technology, Vol. 72, [Issue 2-3], pp 180183. 2000
J157.
Lithographically defined nano and micro sensors using "float coating" of resist and electron beam lithography.,
Zhou, H., Chong, B. K., Stopford, P., Mills, G., Midha, A., Donaldson, L., and Weaver, J. M. R.
Journal Of Vacuum Science & Technology B, Vol. 18, [Issue 6], pp 3594-3599. 2000
J158
Inverse flux quantum periodicity in the amplitudes of commensurability oscillations in two-dimensional lateral
surface superlattices, S. Chowdhury, A. R. Long, E. Skuras, J. H. Davies, K.Lister, G. Pennelli and C. R.
Stanley, Phys Rev B 69, 035330 (2004)
J159
The 2DEG as a non-invasive tool for determining the switching behaviour in Cobalt needle arrays,T.
McMullen, E. Skuras, K. J. Kirk, J. H. Davies and A. R. Long, Physica E (2004), accepted.
J160
Magnetoresistance oscillations in a modulated 2DEG periodic in the ratio h/e to the flux per unit cell, X. F.
Wang, P. Vasilopoulos, F. M. Peeters, S. Chowdhury, A. R. Long and J. H. Davies, Physica E (2004), accepted
J161
Magnetization of Co elements sensed by semiconductor transport magnetometry and transmission electron
microscopy,K. J. Kirk, S. McVitie, A. R. Long and E. Skuras, Journal of Applied Physics 93, 7906-8 (2003).