Fall 2005
Handout #1
Santa Clara University
Department of Electrical Engineering
Fall 2005
ELEN 384: Advanced MOSFET Physics and Modeling
Instructor:
Samar Saha, Ph. D.
Email: samar@ieee.org / samarsah@pacbell.net
(408) 655-8737 (cell)
Lecturers:
ENGR 304
Thursday 5:10 PM – 7:00 PM
Credit:
2 units
Office hours: By appointment / email
Course objective:
To expose students the advanced theory of Metal-Oxide-Semiconductor Transistors
(MOSFET) with emphasis on the parameters, performance factors, and models that are
particularly important for deep-submicron VLSI devices and circuit design.
Course description:
In this class you will learn the fundamentals of MOSFETs and the physical phenomena
observed in small geometry MOSFETs; basic theory of MOSFETs to derive compact models
for VLSI circuit simulation; challenges and options for modeling devices of advanced VLSI
technologies; detailed formulation of industry standard and emerging compact MOS models;
and techniques to extract model parameters for VLSI circuit simulation.
Pre-requisite:
ELEN 265 (Semiconductor Device Theory II) or equivalent; ELEN 251 (Transistor Models
for IC Design) or equivalent; and the basic knowledge of MOSFET process technology and
device architecture.
Textbooks:
1. Operation and Modeling of the MOS Transistor, Y. Tsividis, Second Ed., Oxford
University Press (1999).
2. MOSFET Models for VLSI Circuit Simulation - Theory and Practice by N. Arora,
Springer-Verlag (1993).
Reference Textbooks:
1. Fundamentals of Modern VLSI Devices, Y. Taur and T. H. Ning, Cambridge Univ. Press
(1998).
2. Device Electronics for Integrated Circuits, 3rd ed., R.S. Muller, T.I. Kamins, and M.
Chan, Wiley (2003).
Fall 2005
Handout #1
Deliverables:
1. There will be 6/7 homework-sets. Homeworks will be assigned approximately every
Thursday and will be due following Thursday in Class. Late homework will not be
accepted.
1. A midterm exam will be given on October 27th. It will be an open book and open notes
exam.
2. Final design project will be due on December 1st in class. You will prepare a 10-minute
presentation of your work. You will have three weeks to complete the project and you
must work alone on this project.
Grading:
Homework:
Midterm exam:
Project:
Final:
20%
30%
20%.
30%.
Course syllabus and schedule:
Week Dates
Topics
Sep 22 Introduction and course overview: two-terminal
1
MOS structures, band diagrams, C – V characteristics,
oxide charges and traps, and measurement techniques.
2
Sep 29 Scaled MOSFETs: scaling MOSFETs, low-field and
high-field characteristics, small-dimension effects, and
threshold voltage extractions.
3
Oct 06 MOSFET DC models: overview of piece-wise current
models, surface mobility and high field effects, model
parameters and extraction techniques …
4
Oct 13 …surface potential based compact models, basic
formulation, 2d/3d effects, and parameter extraction
techniques.
5
Oct 20 Capacitance models: charge-based model, long and
short channel capacitances, charge partitioning, and
parasitic capacitance models.
Oct 27 Midterm Exam
6
7
Nov 03 Hot-carrier effects: gate current and lucky electron
model, substrate current model, and parameter
extraction.
8
Nov 10
9
Nov 17
10
11
Nov 24
Dec 01
12
Dec 08
Assignments
HW # 1
Tsividis – Ch. 2
Arora – Ch. 4
HW # 2
Tsividis – Ch. 6
Arora – Ch. 5
HW # 3
Tsividis – Ch. 4
Arora – Ch. 6
HW # 4
Tsividis – Ch. 7
Arora – Ch. 7
HW # 5
Arora – Ch. 3
HW # 6
Arora – Ch. 8
Design project
Noise model: basic theory of noise models and HW # 7
temperature effects on MOS models.
Tsividis – Ch. 8
Non Quasi-Static (NQS) effects: modeling Tsividis – Ch. 7
Arora – Ch. 7, 8
approaches of NQS effects in MOSFETs.
Thanksgiving recess
Advanced MOS Compact models: survey of the Project due
challenges in MOS modeling and emerging models.
Final Exam
Due
HW # 1
HW # 2
HW # 3
HW # 4
HW # 5
HW # 6
HW # 7