資訊系 - 國立成功大學

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國立成功大學「發展國際一流大學及頂尖研究中心計畫」獎勵學術期刊論文發表補助
電機資訊
學院申請表
ㄧ、論文發表
加權分數
作者
序號
篇名
(請依原論文發表之
作者順序列出所有作
者,以底線標示申請
人,另共同作者如為
所指導之學生或非本
校人員請註明)
期刊名稱;發表年
份;卷數:起迄頁
數
(J,計算方式請二者擇一)
「期刊分類排
名」
1.
Electronic Transport and Schottky
Barrier Heights of Ni/Au Contacts
on n-Type GaN Surface with and
without a Thin Native Oxide layer
subject category
Y. J. Lin (非本校
Jpn.
J.
Appl.
PHYSICS,
人 員 ), W. X.
Phys., 2006, vol. APPLIED,
Lin( 非 本 校 人
45, pp. 2505-2508 Ranking
41/83
員 ), C. T. Lee,
= 49
%,
and H. C. Chang
J=
2.
3
Fabrications of large-scaled organic
light emitting devices on the flexible
substrates using a combined roller
imprinting and photolithography
Journal of the ENGINEERING,
ELECTRICAL
&
Vacuum Science ELECTRONIC,
and Technology Ranking
41/ 208
B:, 2006, V24, = 19.71
%,
第 1 頁,共 19 頁
「影響係
數」
IF( 1.096 )*4
J= 4
1
(第三
作者)
4
0.15
0.6
李清庭
微電子所
4
subject category
Po-Ching Kao,
MATERIALS
Sheng-Yuan
Journal of the SCIENCE,
Improved performance of the organic Chu*, Zong-Xian
&
Electrochemical COATINGS
light-emitting
diodes
using You, S.J.Liou (台
FILMS
,
Ranking
Society 2006, V.
metal-phthalocyanine hole-injection
南 大 學 ) and 153 (6), H122 – 2/ 19
layer
= 10.52
%,
Chan-An Chuang H126
(台南大學)
J= 16
Po-Ching Kao,
Sheng-Yuan
Chu*, Chuan-Yi
Zhan,
研究
成果
分類 補助金額
「著作
分數 補助 JxAxS
貢獻指
老師姓名
JxA 額度 (單位:新台
標」(A)
(S) 幣萬元)
(註
)
IF(
J=
)*4
3
48 0.15 7.2
朱聖緣
電機系
3
48 0.15 7.2
朱聖緣
電機系
2
patterning technique
Lien-Chung
n3, p. 1278 –
Hsu( 成 大 材 料 1282
系 ), Wen-Chang
Liao( 成 大 材 料
系)
J= 16
ENGINEERING,
ELECTRICAL
&
ELECTRONIC,
4
Integrated
Ming-Ru Yang
Studies on the characterization of the
Ferroelectrics, Ranking
and Sheng-Yuan
SnO2 nanowires growth
2006, V. 78, p. 208
Chu*
1–9
= 73.55
153/
3
6
0.15 0.9
朱聖緣
電機系
1
8
0.15 1.2
朱聖緣
電機系
3
24 0.15 3.6
王振興
電機系
%,
J= 2
5
Kuang Yao Lo
(嘉義大學),
Analysis of the growth of rf Shih-Chieh Lo
sputtered ZnO thin films using the ( 嘉 義 大 學 ) ,
optical reflective second harmonic Sheng-Yuan
Chu,
generation
Ren-ChuanChan
g, Chang-Feng
Yu
6
subject category
IEEE
,
A Fully Automated Recurrent Neural Jeen-Shing Wang Transactions on
Ranking7357/ 209208
Network for Unknown Dynamic and
Yen-Ping Circuits
and = 34.9329 %,
System Identification and Control
Chen
Systems-I; 2006;
vol. 56, no. 6.
J= 8
7
Dielectric
Characteristics
Nd(Zn1/2Ti1/2)O3
Ceramics
Microwave Frequencies
Ching-Fang
Tseng
of
Cheng-Liang
at
Huang
Wen-Ruei Yang
Cheng-Hsing Hsu
Journal
of CRYSTALLOGRAP
HY Ranking
8/
Crystal
24
Growth,2006,
%,
V. 290, n2, p. = 33.33
J= 8
532 – 538
Journal of the subject category
Materials Science:
American
Ceramics, Ranking 1
Ceramic Society, / 2528
Vol. 89, No. 4, = 4 %,
pp. 1465-1470,
April 2006
J= 32
第 2 頁,共 19 頁
IF(
J=
IF(
J=
)*4
)*4
本人為
通訊作
者, 第
一作者 96 0.15
為研究
生
(3)
14.4
黃正亮
電機系
3
8
New
Dielectric
Materials
of
Jin-Jie Wang
xSrTiO3-(1-x)Ca(Mg1/3Nb2/3)O3
Cheng-Liang
Ceramic System at Microwave
Huang
Frequency
subject category
Materials Letters, Materials Science:
Vol. 60, No. Multidisciplinary,
9-10,
pp. Ranking 6056 /
1280-1283, May 177178
= 33.831.5 %,
2006
J= 8
本人為
通訊作
者, 第
一作者 24 0.15
為研究
生
(3)
3.6
黃正亮
電機系
9
Dielectric Properties of Copper Cheng-Liang
Oxide
Doped Huang
0.95Ba(Zn1/3Ta2/3)O3-0.05BaZrO3
Ruei-Jsung Lin
Ceramics at Microwave Frequency Jing-Fang Tseng
Materials
subject category
Chemistry and Materials Science:
Physics, Vol. 97, Multidisciplinary,
Ranking
6670
/
No. 2-3, pp.
177178
256-260,
June = 37.339 %,
2006
J= 8
本人為
第一作
24 0.15
者
(3)
3.6
黃正亮
電機系
Japanese Journal
of
Applied subject category
Physics, Vol. 45, Physics Applied,
No. 4A, pp. Ranking 3941 /7983
= 49.349.4 %,
2680-2682, April
J= 4
2006
本人為
通訊作
者, 第
一作者 12 0.15
為研究
生
(3)
1.8
黃正亮
電機系
10
11
12
Ching-Fang
Tseng
Microwave Dielectric Characteristics Cheng-Hsing Hsu
of Zr0.8Sn0.2TiO4 Ceramics with WO3 Cheng-Liang
Additives
Huang
Chung-Chuang
Wei
Wen-His Lee,
Wei-Ting Chen,
Characterization of ZnO-based
Ching-Li Hu,
Multilayer Varistor Sintered by
Ying-Chieh
Hot-Press Sintering
Lee
Shih-Ping Lin
Chi-Yi Su
Wen-His Lee
Relationship between Microstructure Wei-Ting Chen
and Electrical Properties of
Ying-Chieh Lee
ZnO-based Multilayer Varistor
Shih-Pin Lin
Tong Yang
THE
INSTITUTE OF
PURE AND
APPLIED
PHYSIC; Vol.
45, No4A, 2006
pp.2689-2694
THE
INSTITUTE OF
PURE AND
APPLIED
PHYSIC;Vol. 45
No.6A, 2006
pp5126
第 3 頁,共 19 頁
非 SCI
IF(1.17 )*4
J= 6
非 SCI
IF(1.17 )*4
J= 6
3
18
3
18
0.15
2.7
0
李文熙
電機系
0.15
2.7
0
李文熙
電機系
4
13
14.
15.
16.
17
18
Chen CY (指導
Efficient news video querying and 學生), Wang JC
browsing based on distributed news ( 指 導 學 生 ),
video servers
Wang JF
Nai Ren Guo,
Tzuu-Hseng S.
Design of hierarchical fuzzy model for
Li *, Chao-Lin
classification problem using GAs
Kuo
IEEE
TRANSACTION
S
ON
MULTIMEDIA 8
(2):
257-269
APR 2006
王駿發
電機系
IF( 1.597 )*4
J= 6.388
3
18
0.15
IF(0.347)*4
J= 1,388
3
6
0.15
12
0.15
1.8
方炎坤
微電子所
12
0.15
1.8
方炎坤
微電子所
12
0.15
1.8
方炎坤
微電子所
48
0.15
7.2
方炎坤
微電子所
2.7
subject category
Computers
& ENGINEERING,
Industrial
INDUSTRIAL,
Engineering
Ranking 24/33
Volume: 50, Issue:
= 72 %,
1-2, May, 2006, pp.
90-104
J= 2
Stress Technology Impact on Device Chieh-Ming Lai, Japanese Journal of
IF( 1.096 )*4
Applied
Physics,
Performances and Reliability for Yean-Kuan Fang, Vol. 45, No. 4B,
J= 4
sub-90 nm SOI CMOSFETs
Wen-Kuan Yeh
2006, pp.3053-3057
Mao-Chyuan
Tang, Yean-Kuen Japanese Journal of
Systematic Analysis and Modeling
IF( 1.096 )*4
Fang, Wen-Kuan Applied Physics,
of On-Chip Spiral Inductors for
J= 4
Yeh,
S.-H Vol. 45, No. 4B,
CMOS RFIC Applications
2006,
pp.3247-3250
Chen,Ta-Hsun
Yeh
Chieh-Ting Lin,
Yean-Kuen Fang,
Wen-Kuan Yeh, Japanese Journal of
Invesitgation and Modeling of Stress
Tung-Hsing Lee, Applied Physics,
IF( 1.096 )*4
Interactions on 90 nm SOI CMOS
Ming-Hing Chen, Vol. 45, No. 4B,
J= 4
with Various Mobility Enhancement
pp.
Che-Hwa
Hsu, 2006,
Approcaches
Liang-Wei Chen, 3049-3052
Hui-Chen Chang,
Cheng-Tzung
Failure
Mechanism
of Y. L. Hsu, Y. K. Journal of The
category
Electromigration in Via Sidewall for Fang,
Y.
T. Electrochemical subject
MATERIALS
Copper
Dual
Damascene Chiang, S. F. Society, 153 (8) SCIENCE, COATINGS &
FILMS , Ranking
Interconnection.
Chen, C. Y. Lin, G782-G786
第 4 頁,共 19 頁
0.9
3
[本人為
通訊作
者]
3
[本人為
通訊作
者]
3
[本人為
通訊作
者]
3
[本人為
通訊作
者]
李祖聖
電機系
5
T. H. Chou, and S. 2006
H. Chang
19
20
21
Y. D. Jhou1, C. H.
Chen2,
S.
J.
Chang, Y. K. Su,
High UV/visible rejection contrast
P. C. Chang, P. C.
AlGaN/GaN MIS photodetectors
Chen, H. Hung, C.
L. Yu, S. M. Wang
and M. H. Wu
S. J. Chang, T. K.
Ko, Y. K. Su, Y. Z.
Chiou,
C.
S.
GaN-based p-i-n sensors with ITO Chang, S. C. Shei,
contacts
J. K. Sheu, W. C.
Lai, Y. C. Lin, W.
S. Chen and C. F.
Shen
C. W. Huang1, S.
A Ku band four-stage PHEMT 1W J. Chang, W. Wu,
MMIC power amplifier
C. L. Wu and C.
S. Chang
2/19
= 10.5 %,
J= 16
subject category
Microelectron. ENGINEERING,
ELECTRICAL
&
Journal,
Vol. ELECTRONIC ,
37, No. 4, pp. Ranking 151 / 208
328-331, April = 72.6 %,
IF(0.35 )*4
J= 1.4
3 (通訊
作者)
6
0.15
0.9
張守進
微電子所
IF(1.1 )*4
J= 4.4
3 (第一
24
作者)
0.15
3.6
張守進
微電子所
IF(0.35 )*4
J= 1.4
3 (第一
作者)
6
0.15
0.9
張守進
微電子所
Jpn. J. Appl. PHYSICS,
Phys., Vol. 45, APPLIED ,Ranking IF(1.096 )*4
3 (通訊
No. 5A, pp. 41 / 83
12
J
= 4.38
作者)
4006-4008, May = 49.4 %,
2006
J= 4
0.15
0.9
張守進
微電子所
2006
J= 2
subject category
IEEE Sensors ENGINEERING,
ELECTRICAL
&
Journal, Vol. 6, ELECTRONIC ,
No.
2,
pp. Ranking 64 / 208
406-411, April = 30.8 %,
2006
J= 8
subject category
Microelectron. ENGINEERING,
ELECTRICAL
&
Journal,
Vol. ELECTRONIC ,
37, No. 5, pp. Ranking 151 / 208
428-432, May = 72.6 %,
2006
J= 2
22
Hole confinement and 1/f noise
Y. M. Lin1, S. L.
characteristics
of
SiGe
Wu2, S. J. Chang,
double-quantum-well
p-type
P. S. Chen and C.
metal-oxide-semiconductor
W. Liu
field-effect transistors
subject category
第 5 頁,共 19 頁
6
23
24
T. K. Lin1, S. J.
Chang, Y. Z.
Homoepitaxial
ZnSe
MIS Chiou, C. K.
photodetectors with SiO2 and BST Wang,
S.
P.
insulator layers
Chang, K. T. Lam,
Y. S. Sun and B.
R. Huang
Nitride-based
ultraviolet
metal-semiconductor-metal
photodetectors with low-temperature
GaN cap layers and Ir/Pt contact
electrodes
subject category
Solid
State ENGINEERING,
ELECTRICAL
&
Electron. , Vol. ELECTRONIC , IF(1.247 )*4 3 (第一
24
50, No. 5, pp. Ranking 58 / 208
J= 4.99
作者)
750-753, May = 27.8 %,
2006
J= 8
subject category
Sci. MATERIALS
Vol. SCIENCE,
COATINGS&FILMS IF(1.399 )*4
pp. ,Ranking 6 / 19
J= 5.6
= 31.6 %,
J. Vac.
S. J. Chang, C. L.
Technol. A,
Yu, C. H. Chen, P.
24, No. 3,
C. Chang, and K.
637-640,
C. Huang
May/June 2006
0.15
3.6
張守進
微電子所
3 (第一
24
作者)
0.15
3.6
張守進
微電子所
2 (第二
16
作者)
0.15
2.4
張守進
微電子所
3 (第一
72
作者)
0.15
10.8
張守進
微電子所
2 (第二
8.33 0.15
作者)
1.25
張守進
微電子所
J= 8
J. Vac.
Inductively coupled plasma etching S. L. Wu , C. H. Technol. A,
of Si1–xGex in CF4/Ar and Cl2/Ar Lee1, S. J. Chang 24, No. 3,
discharges
and Y. M. Lin
728-731,
May/June 2006
2
25
subject category
Sci. MATERIALS
Vol. SCIENCE,
COATINGS&FILMS IF(1.399 )*4
pp. ,Ranking 6 / 19
J= 5.6
= 31.6 %,
J= 8
26
T. J. Hsueh1, S. J.
Chang, Y. R. Lin,
A novel method for the formation of
S. Y. Tsai, I. C.
ladder-like ZnO nanowires
Chen and C. L.
Hsu
subject category
MATERIALS
Crystal Growth SCIENCE,
& Design, Vol. MULTIDISCIPLINA IF(3.551 )*4
6, No. 6, pp. RY , Ranking 14 /
J= 14.2
1282-1284, June 178
= 7.9 %,
2006
J= 24
27
Nitride-based light emitting diodes C. H. Kuo2, S. J. Phys.
Status
with quaternary p-AlInGaN surface Chang, G. C. Chi, Solidi A, Vol. 3, subject category
第 6 頁,共 19 頁
IF(1.041 )*4
J= 4.16
7
layers
K. T. Lam and Y. No.
6,
S. Sun
2153-2155,
2006
pp. MATERIALS
June SCIENCE,
MULTIDISCIPLINA
RY , Ranking 76 /
178
= 42.7 %,
J= 4
2
28.
subject category
J. Electrochem. MATERIALS
Soc., Vol. 153, SCIENCE,
COATINGS&FILMS
No.
4,
pp. ,Ranking 2 / 19
G333-G336,
= 10.5 %,
C. L. Hsu , Y. R.
Influence of the formation of the Lin2, S. J. Chang,
second phase in ZnO/Ga nanowire T. H. Lu, T. S.
systems
Lin, S. Y. Tsai and
I. C. Chen
April 2006
IF(2.19 )*4
J= 8.76
1 (第三
16
作者)
0.15
張守進
微電子所
2.4
J= 16
subject category
27.
Jui-Chieh Chiu,
A PCB-compatible 3dB Coupler Using Jih-Ming Lin,
Microstrip-to-CPW Transitions
Mau-Phon Houng,
and Yeong-Her Wang
IEEE Microwave and
ENGINEERING,
Wireless
ELECTRICAL&
Components Letters,
ELECTRONIC,
vol.16,
no.6,
pp369-371,.
June, Ranking
2006
43/208=20.67%
3
IF(1.474 )*4 (本人為
通信作
J=
者)
24
2
(Chiu
係本人
指導研
究生))
32
3
IF(1.474 )*4 (本人為
通信作
J=
者)
24
0.15
3.6
王永和
微電子所
4.8
王永和
微電子所
3.6
王永和
微電子所
J= 8
Journal of the
Electrochemical
Society, Vol. 153,
no.8, pp. D129-D133,
June, 2006
subject category
MATERIALS
SCIENCE,
COATINGS &
FILMS,Ranking
2/19=10.52%,
J= 16
28
Chien-Jung Huang,
Pin-Hsiang Chiu,
Synthesis of the Gold Nanocubes by
Yeong-Her Wang
Electrochemical Technique
Wen-Ray Chen and
Teen-Hang Meen
29
H. Z. Liu, C. H. Lin, C. IEEE Microwave and
A Self-bias Ku-band 1-Watt PHEMT Power K. Chu, H. K. Huang, Wireless Components subject category
Amplifier MMIC With A Compact Source C. H. Chang, C. L. Letters, vol.16, no.6,
Capacitor
June, ENGINEERING,
Wu,C. S. Chang, and pp330-332,.
ELECTRICAL&
2006
Y. H. Wang ,
第 7 頁,共 19 頁
IF(2.190 )*4
J=
0.15
0.15
8
ELECTRONIC,
Ranking
43/208=20.67%
J= 8
30
New
Design
Concept
of
Dual-Mode Bandpass Filter by
Using Nonorthogonal Input and
Output
Ports
for
Wireless
Application
H.-J. Chen, T.-H.
Huang,
L.-S.
Chen,
J.-H.
Horng, and M.-P.
Houng
Han-Jan Chen,
Tsung-Hui
Huang,
Chin-Shen
A Novel Cross-Shape DGS Applied Chang, Lih-Shan
31 to Design Ultra-Wide Stopband Chen,
Na-Fu
Low-Pass Filters
Wang,
Yeong-Her
Wang,
and
Mau-Phon
Houng
Tsung-Hui
Huang, Han-Jan
A Novel compact Ring Dual-Mode Chen, Chin-Shen
Filter
With
Adjustable Chang, Lih-Shan
32
Second-Passband for Dual-Band Chen, Yeong-Her
Applications
Wang,
and
Mau-Phon
Houng
33
Evolution of conduction and
interface states of laterally
Chen JF, Hsiao
RS, Hung WK,
subject category
Microwave and ENGINEERING,
ELECTRICAL
&
Optical
ELECTRONIC;
IF(0.467)*4
Technology
OPTICS,
J= 2
Letters
Ranking 42 / 55
48(4):639-641, = 76.4 %,
3(本人
為通信
作者)
6
0.15
0.9
洪茂峰
微電子所
IEEE
MICROWAVE subject category
AND
Engineering,Electri
3(本人
cal, Electronic
WIRELESS
IF(1.474)*4
Ranking
43
/
208
為通信 24
COMPONENT
J= 6
=20.7
%,
S LETTERS,
作者)
VOL.16, no.5,
J= 8
252-254, MAY
2006
0.15
3.6
洪茂峰
微電子所
0.15
3.6
洪茂峰
微電子所
April 2006
J= 2
IEEE
MICROWAVE subject category
AND
Engineering,Electri
cal, Electronic
WIRELESS
IF(1.474)*4
COMPONENT Ranking 43 / 208
J= 6
S LETTERS, =20.7 %,
VOL.16, no.6,
J= 8
360-362, JUNE
2006
IF(
)*4
JOURNAL OF subject category
J=
APPLIED
PHYSICS,
第 8 頁,共 19 頁
3(本人
為通信 24
作者)
3
(第一
48
0.15
7.2
蘇炎坤
9
wet-oxidized AlGaAs with oxidation Wang JS, Chi JY,
time
Yu HC, Su YK
(所指導的學生)
APPLIED,Ranking
PHYSICS 99
12/83
(2): Art. No.
023711 JAN 15 = 14%,
2006
J= 16
作者)
微電子所
subject category
Effect of thickness on the structural
and electrical properties of
34
sol-gel-derived (Zr, Sn)TiO4 thin
films
Yang RY, Weng
MH, Ho YS, Su
YK, Yeh YM
(所指導的學生)
ELECTROCHE MATERIALS
SCIENCE,
MICAL AND MULTIDISCIPLINA
SOLID STATE RY,
LETTERS 9 (5): Ranking 32/178
F31-F33 2006 = 18 %,
3
(第一
作者)
48
0.15
7.2
蘇炎坤
微電子所
3
(第一
作者)
12
0.15
1.8
蘇炎坤
微電子所
3
(第一
作者)
12
0.15
1.8
蘇炎坤
微電子所
J= 16
JAPANESE
JOURNAL OF
APPLIED
PHYSICS PART
category
Su YK, Chen WC, 1-REGULAR subject
Improvement in linearity of novel
PHYSICS,
APPLIED
Hsu SH, Wu JD,
PAPERS BRIEF
35 InGaAsN-based high electron
Chang SJ, Chuang COMMUNICA ,Ranking 41/83
mobility transistors
= 49 %,
RW, Chen WR
TIONS &
J= 4
REVIEW
PAPERS 45
(4B): 3372-3375
APR 2006
JAPANESE
JOURNAL OF
APPLIED
Noise analysis of nitride-based metal Chiou YZ, Su
PHYSICS PART
subject
category
oxide-semiconductor heterostructure YK, Gong J,
1-REGULAR PHYSICS, APPLIED
field effect transistors with
Chang SJ, Wang
36
PAPERS BRIEF ,Ranking 41/83
photo-chemical vapor deposition
CK
COMMUNICA = 49 %,
SiO2 gate oxide in the linear and
(所指導的學生) TIONS &
J= 4
saturation regions
REVIEW
PAPERS 45
(4B): 3405-3409
第 9 頁,共 19 頁
10
APR 2006
JAPANESE
JOURNAL OF
APPLIED
PHYSICS PART
subject category
Chen
WC,
Su
YK,
Triple luminescence peaks observed
1-REGULAR PHYSICS,
in the InGaAsN/GaAs single Chuang RW, Hsu PAPERS BRIEF APPLIED,Ranking
37
quantum well grown by metalorganic SH
COMMUNICA 41/83
= 49 %,
(所指導的學生) TIONS &
vapor phase epitaxy
REVIEW
J= 4
PAPERS 45
(4B): 3537-3539
APR 2006
IEICE
TRANSACTIO subject category
Wu HW, Weng
ENGINEERING,
Spurious suppression of a parallel
NS
ON
ELECTRICAL &
MH, Su YK, Yang
coupled microstrip bandpass filter
ELECTRONIC
38
ELECTRONIC,
RY, Hung CY
with simple ring EBG cells on the
Ranking 132/208
S E89C (4):
(所指導的學生)
middle layer
= 63 %,
568-570 APR
J= 2
2006
Hsu SH, Chen
JOURNAL OF
subject category
Effects of nitrogen incorporation on WR, Su YK,
CRYSTAL
CRYSTALLOGRAP
Chuang RW,
the electronic properties of
GROWTH
290
39
HY,Ranking 8/24
GaxN1-xAs1-y epilayers probed by Chang SJ, Chen
(1):
87-90
APR
= 33%,
WC
persistent photoconductivity
15 2006
J= 8
(所指導的學生)
IEEE
TRANSACTIO subject category
ENGINEERING,
Wang JP, Su YK, NS ON
Device enhancement using
ELECTRICAL &
Chen JF
40 process-strained-Si for sub-100-nm
ELECTRON
ELECTRONIC,
(所指導的學生) DEVICES 53
Ranking 25/208
nMOSFET
(5): 1276-1279 = 12 %,
J= 16
MAY 2006
第 10 頁,共 19 頁
3
(第一
作者)
12
0.15
1.8
蘇炎坤
微電子所
3
(第一
作者)
6
0.15
0.9
蘇炎坤
微電子所
3
(第一
作者)
24
0.15
3.6
蘇炎坤
微電子所
3
(第一
作者)
48
0.15
7.2
蘇炎坤
微電子所
11
Electrical and surface composition
41 properties of phosphorus
implantation in Mg-doped GaN
Liu KT, Su YK,
Chuang RW,
Chang SJ,
Horikoshi Y
(所指導的學生)
Investigation of the optical
properties of InGaAs(N):(Sb)
42
quantum wells grown by metal
organic vapor phase epitaxy
Chen W.C., Su Y.
K., Chuang R. W.
Hsu S. H
(所指導的學生)
MICROELECT subject category
ENGINEERING,
RONICS
ELECTRICAL &
JOURNAL 37 ELECTRONIC,
Ranking 151/208
(5): 417-420
= 73%,
MAY 2006
J= 2
Journal of
Vacuum Science subject
category
& Technology MATERIALS
SCIENCE,
A: Vacuum,
COATINGS
&
Surfaces, and
FILMS
Films -- May
,Ranking 6/19
2006 -- Volume = 32 %,
24, Issue 3, pp.
J= 8
591-594
C.C. Cheng, Y.Y.
Tsai, K.W. Lin,
Pd-oxide-Al0.24Ga0.76As (MOS) high
H.I. Chen, W.H. IEEE SENSORS
JOURNAL 6 (2):
mobility
transistor
43 electron
Hsu, C.W. Hong, 287-292 APR. 2006
(HEMT)-based hydrogen sensor
R.C. Liu, and
W.C. Liu
subject category
ENGINEERING,
ELECTRICAL
&
ELECTRONIC
, IF(1.100)*4
Ranking 64/208
J=
= 30.8 %,
3
(第一
作者)
6
0.15
0.9
蘇炎坤
微電子所
3
(第一
作者)
24
0.15
3.6
蘇炎坤
微電子所
0.15
3.6
劉文超
微電子所
0.15
3.6
劉文超
微電子所
0.15
0.6
劉文超
微電子所
3
(本人
24
為通信
作者)
J= 8
P.H. Lai, S.I Fu,
Y.Y. Tsai, C.H.
Thermal-stability improvement of a
Yen,
H.M.
44 sulfur-passivated
Chuang,
S.Y.
InGaP/InGaAs/GaAs HFET
Cheng, and W.C.
Liu
IEEE
TRANSACTIONS
ON DEVICE AND
MATERIALS
RELIABILITY 6
(1): 52-59 MAR.
2006
S.I
Fu,
S.Y.
Characteristics
of
InGaP/GaAs Cheng, and W.C.
45 heterojunction bipolar transistors Liu
(S.I Fu 為本人之
(HBTs) with sulfur treatments
指導學生)
SUPERLATTICES subject category
AND
PHYSICS,
IF(0.702)*4
MICROSTRUCTU CONDENSED
RES
39
(5): MATTER ,Ranking J=
436-445 MAY 2006
41/60
subject category
ENGINEERING,
ELECTRICAL
& IF(1.044)*4
ELECTRONIC
, J=
Ranking 67/208
= 32.2 %,
3
(本人
24
為通信
作者)
J= 8
第 11 頁,共 19 頁
2
(本人
為第二
作者)
4
12
= 68.3 %,
J= 2
Improved
temperature-dependent
characteristics of a sulfur-passivated
46 AlGaAs/InGaAs/GaAs
pseudomorphic
high-electron-mobility transistor
P.H. Lai, S.I Fu,
Y.Y. Tsai, C.W.
Hung, C.H. Yen,
H.M. Chuang, and
W.C. Liu
JOURNAL
OF subject category
MATERIALS
THE
SCIENCE,
IF(2.190)*4
ELECTROCHEMI
CAL
SOCIETY COATINGS&FILMS J=
153
(7): ,Ranking 2/19
G632-G635 2006 = 10.5 %,
3
0.15
7.2
劉文超
微電子所
0.15
3.6
劉文超
微電子所
12 0.15
1.8
王水進
微電子所
(本人
為指導
&
IF( 2.825 )*4
學生外 32 0.15
J= 11.3
第三作
者,C.
4.8
王水進
微電子所
(本人
48
為通信
作者)
J= 16
Three-terminal-controlled
47
resistor-type hydrogen sensor
C.W. Hung, H.L.
Lin, Y.Y. Tsai,
P.H. Lai, S.I Fu,
H.I. Chen, and
W.C. Liu
subject category
ENGINEERING,
ELECTRONICS
& IF(1.016)*4
LETTERS 42 (10): ELECTRICAL
ELECTRONIC
,
578-580 MAY 11
J=
Ranking 70/208
2006
= 33.7 %,
3
(本人
24
為通信
作者)
J= 8
Shui-Jinn Wang,
Chen,
A Vertical-structured Ni/GaN Schottky Tron-Min
Kai-Ming
Uang,
Barrier Diode Using Electroplating
48
Shiue-Lung Chen,
Nickel Substrate
Tung-Sheng Hsiao,
Shu-Cheng Chang,
Hon-Yi Kuo, and
Bor-Wen Liou
subject category
Japanese
PHYSICS,
Journal
of APPLIED ,
Applied
Ranking=41/83
Physics, 2006, = 49.3 %,
Vol. 45, No. 22,
J= 4
pp.L555-L558
C. H. Wu, B. F.
subject category
Hung,
Albert IEEE Electron ENGINEERING,
HfAlON n-MOSFETs Incorporating Chin, S. J. Wang, Device Letters, ELECTRICAL
2006, Vol. 27,
49 Low Work Function Gate Using F. Y. Yen, Y. T. No. 6, pp. 454- ELECTRONIC,
Ranking=7/208
Ytterbium-Silicide
Hou, Y. Jin, H. J. 456,
= 3.36 %,
Tao, S. C. Chen,
J= 32
and M. S. Liang,
第 12 頁,共 19 頁
3
IF( 1.096 )*4 (本人
J= 4.384 為通信
作者)
1
H. Wu
13
為本人
指導學
生)
1
C. H. Lai, C. H.
A Quantum Trap MONOS Memory Wu, Albert Chin,
50
Device Using AlN
S. J. Wang, and S.
P. McAlister,
Effect of Surface Treatment on the
Performances of Vertical-structure
51
GaN-based High-power LEDs with
Electroplating Metallic Substrate
The use of transparent conducting
indium-zinc oxide film as a current
layer
for
52 spreading
vertical-structured
high-power
GaN-based light-emitting diodes
subject category
Journal of The MATERIALS
Electrochemical SCIENCE,
IF( 2.190 )*4
Society, 2006, COATINGS&FILMS
J= 8.76
Vol. 153, No. 8, , Ranking=2/19
= 10.5 %,
pp. G738–G741
J= 16
Kai-Ming Uang, Japanese
Shui-Jinn Wang, Journal
of subject category
PHYSICS,
Shiue-Lung Chen, Applied
APPLIED ,
Yu-Cheng Yang, Physics, 2006, Ranking=41/83
Tron-Min
Chen Vol. 45, No. 4B, = 49.3 %,
and
Bor-Wen pp. 3436-3441, J= 4
Liou,
A
Shui-Jinn Wang, IEEE
subject category
Shiue-Lung Chen, Photonics
ENGINEERING,
ELECTRICAL
Kai-Ming Uang, Technology
ELECTRONIC,
Letters,
2006,
Wei-Chi
Lee,
Ranking=19/208
Vol.18,
issue
10,
Tron-Min Chen,
= 9.13 %,
pp.1146-1148
and Chao-Hsuing
J= 24
Chen,
(本人
為指導
學生外
第三作
者,C. 16 0.15
2.4
王水進
微電子所
12 0.15
1.8
王水進
微電子所
72 0.15
10.8
王水進
微電子所
24
3.6
許渭州
微電子所
H. Wu
為本人
指導學
生)
3
IF( 1.096 )*4 (本人
J= 4.384 為通信
作者)
&
3
IF( 2.266 )*4 (本人
J= 9.064 為通信
作者)
Comparative study of
In0.52Al0.48As/InxGa1-xAs/InP
53 high-electron-mobility transistors with a
symmetrically graded and an inversely
graded channel
subject category
Huang, DH(所指導之 SEMICOND SCI ENGINEERING,
ELECTRICAL &
TECH 21 (6):
學生) ,Hsu, WC, Lin,
781-785 JUN 2006 ELECTRONIC,
YS
Ranking 60/208
=28.8%,
第 13 頁,共 19 頁
3
IF( 1.222 )*4 (本人
J=4.888
為通信
作者)
0.15
14
J=
High-temperature threshold
Lee CS(非本校人員), APPLIED PHYSICS
characteristics of a symmetrically graded Chen YJ, Hsu WC, Su LETTERS 88 (22):
54 InAlAs/In Ga As/GaAs metamorphic KH, Huang JC, Huang Art. No. 223506
x
1-x
MAY 29 2006
DH, Wu CL
high electron mobility transistor
55
8
subject category
APPLIED PHYSICS
LETTER,
Ranking 4/83
=4.82%,
J= 32
subject category
ENGINEERING,
SEMICONDUCTOR
Lin YS(非本校人員),
ELECTRICAL &
SCIENCE AND
Improved InAlGaP-based heterostructure Huang DH, Hsu WC,
ELECTRONIC,
TECHNOLOGY 21
Wang TB, Su KH,
field-effect transistors
(4): 540-543 APR Ranking 60/208
Huang JC, Ho CH
=28.8%,
2006
J=
2
(本人
64
非通信
作者)
0.15
2
(本人
IF( 1.222 )*4
16
J=4.888
非通信
作者)
0.15
IF(4.127)*4
J=16.508
9.6
2.4
許渭州
微電子所
許渭州
微電子所
8
Lee CS(非本校人員),
Hsu WC, Su KH,
JOURNAL OF THE
Ni/Au-Gate
Huang JC, Huang DH,
KOREAN
In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/Ga
PHYSICAL
Chen YJ Yu-Hsiang
56 As
metamorphic high-electron-mobility
SOCIETY 48 (4):
CHANG, Hsin-Chieh 653-657 APR 2006
transistors
YU and Tsin-Dong
subject category
PHYSICS,
MULTIDISCIPLINA
Y,Ranking 41/69
=59.42%,
J= 4
IF(0.828)*4
J=3.312
2
(本人
非通信
作者)
8
0.15
1.2
3
72
0.15
10.8
許渭州
微電子所
LEE
57
The Effects of Component Q
Distribution on Microwave Filters
C. -M. Tsai
and H. -M. Lee
(H.-M. Lee 在論
文送審時為本校
博士班學生,論文
刊出時為本校博
士後研究員)
IEEE Trans.
Microwave
Theory and
Tech.,
pp.1545-1553,
April 2006.
subject category
ENGINEERING,
ELECTRICAL
&
ELECTRONIC,
Ranking
=
18/208
8.65 %,
J=
第 14 頁,共 19 頁
24
IF(
J=
)*4
蔡智明
電通所
15
Comments on Automatic Analysis of
58 Consistency between Requirements
and Designs
Building and Using Object-Oriented
Frameworks for CAD Rapid
59
Prototyping
60
61
H. C. Jiau,
D.-F. Yu.
H. C. Jiau,
K. F. Ssu.
TeMeFr: Towards a Reuse-Based
Development for
Conference-Oriented Telemedicine
Systems
H. C. Jiau,
J. C. Chen,
K. F. Ssu.
MPM: a hierarchical clustering
algorithm using matrix partitioning
method for non-numeric data
H. C. Jiau,
Y. J. Su,
Y. M. Lin,
S. R. Tsai.
IEEE
Transactions on
Software
Engineering;
2006;
Vol. 32;
pp. 279-280.
Journal of
Information
Science and
Engineering;
2006;
Vol. 22;
pp. 595-609.
Journal of
Information
Science and
Engineering;
Vol. 22;
pp. 625-640.
Journal of
Intelligent
Information
Systems;
Vol. 26;
pp. 185-207.
subject category
COMPUTER
SCIENCE,
SOFTWARE
ENGINEERING ,
焦惠津
電通所
IF(1.967)*4
J=7.868
3
72
0.15
IF(0.268)*4
J=1.702
3
6
0.15
0.9
焦惠津
電通所
IF(0.268)*4
J=1.702
3
6
0.15
0.9
焦惠津
電通所
IF(1.234)*4
J=4.936
3
24
0.15
3.6
焦惠津
電通所
IF(0.978)*4
J=3.912
3
24
0.15
10.8
Ranking 7 / 79=
8.86%, J= 24
Subject category
COMPUTER
SCIENCE,
INFORMATION
SYSTEMS , Ranking
77/ 83= 92.771%,
J= 2
Subject category
COMPUTER
SCIENCE,
INFORMATION
SYSTEMS, Ranking
77/ 83= 92.771%,
J= 2
Subject category
COMPUTER
SCIENCE,
INFORMATION
SYSTEMS, Ranking
30/ 83= 36.145%,
J= 8
subject category
62
Detection and diagnosis of data
inconsistency failures in wireless
sensor networks
Ssu KF,
Chou CH,
Jiau HC,
Hu WT
Computer
ENGINEERING,
Networks;
ELECTRICAL
&
2006;
ELECTRONIC,
Vol. 50;
Ranking 77 / 208=
pp. 1247-1260.
37.0.2%, J= 8
第 15 頁,共 19 頁
3.6
斯國峰
電通所
16
A new derivation of
63 least-squares-fitting principle for
OFDM channel estimation
IEEE
Transactions on
Wireless
Ming-Xian Chang Communication
s,
(張名先)
vol. 5,
pp. 726-731,
Apr. 2006.
subject category
Telecommuications
,
Ranking 12/59
= 20 %,
IF(1.395)*4
J=
3
(第一
作者)
0.15
3.6
張名先
電通所
2*3
0.15
=6
0.9
莊惠如
電通所
1.35
黃振發
電通所
24
J= 8
subject category
A 2 GHz, 0.25 m CMOS
complementary VCO with
64
differentially tuned MOS varactors
for wireless applications
ENGINEERING,
H.-T. Lin, Y.-K.
Chu, and H.-R.
Chuang
ELECTRICAL &
Microwave
Journal, vol.49, ELECTRONIC,
no.1, pp.94-102, Ranking 180 /208
= 86.5 %,
Apr. 2006.
3
IF( 0.167 )*4 (本人
J= 0.67 為通信
作者)
J= 2
Complementary Bipolar Spectral
Yao-Tang
Amplitude and Polarization Coding
Chang(學生)
65
over
Fiber-Grating-Based
Jen-Fa Huang
Differential Photo-Detectors
Optical
subject category
Engineering,
OPTICS
,
Vol. 45(4),
0.754*4=3
pp. 045004-1 – Ranking 33 / 54
045004-11,
= 61.1 %,J= 3
April 2006.
Journal of
Jung-Shian
Systems and
Effective fair allocation using smart
Li ,Chu-Fen Li
66 market label auction with CSLF and
Software; 2006,
and Cheng-Pong
CR-CSFQ
May, vol. 79/5
Lo
pp. 665-673
COMPUTER
SCIENCE
SOFTWARE
ENGINEERING
36/76 = 47%
Computer
Improve
routing
trust
with
Communications, ELECTRICAL
promiscuous
listening
routing Jung-Shian Li and
ENGINEERING
67
2006, April, vol.
security algorithm in mobile ad hoc Cheng-Ta Lee
108/209 = 51%
29/8 pp.
networks
1121-1132
第 16 頁,共 19 頁
3
9
0.15
3
(本人
12
為第一
作者)
0.15
1.8
李忠憲
電通所
3
(本人
12
為第一
作者)
0.15
1.8
李忠憲
電通所
17
Journal of
Systems
Random early detection with flow
Jung-Shian Li, Su Architecture
68 number estimation and queue length
YS
June
feedback control
2006 ,vol.52/6
pp. 359-372
69
70
Efficient rate-distortion
estimation for H.264/AVC coders
Aggregate a Posteriori
Regression Adaptation
Tu YK(所指導的學生)
Yang JF
Sun MT
IEEE
TRANSACTIONS
ON CIRCUITS
AND SYSTEMS
FOR VIDEO
TECHNOLOGY 16
(5): 600-611
MAY 2006
subject category
ENGINEERING,
ELECTRICAL
&
ELECTRONIC
, IF(3.022 )*4
Ranking 5 / 208
J= 12
= 2.4
%,
6
0.15
0.9
李忠憲
電通所
3
(第一 96
作者)
0.15
14.4
楊家輝
電通所
J= 32
IEEE
Trans. subject category
Audio,
Speech,
,
Jen-Tzung Chien,
Linear Chih-Hsien Huang and Language Ranking
/
Processing, vol. =
%,
(學生)
14, no. 3, pp.
J= 4
797- 807, 2006
IEEE
Transactions on
Sheng-Tzong
Circuits
and
and Systems
Quantum Switching and Quantum Cheng
I:
71
Chun-Yen Wang Regular Papers;
Merge Sorting
(指導之學生)
2006; vol. 53;
no. 2, pp. 316 -325
Computer
Chung-Ming
Communication
MultiGate6: An IPv6 Multihoming
Huang,
s, VOL. 29,
72
Gateway Using a Hybrid Approach
Ching-Hsien Tsai, Issue 10, pp.
and Po-chou Su
1842-1857,
2006
2
(本人
為第一
作者)
COMPUTER
SCIENCE,
HARDWARE &
ARCHITECTURE
32/44=73%
3
12
0.15
1.8
簡仁宗
資訊系
8
3
24
0.15
3.6
鄭憲宗
資訊系
期刊分類排名加
權分數27/59=46%: 4
(“Telecommunica
tions” category)
3
12
0.15
1.8
黃崇明
資訊系
第 17 頁,共 19 頁
IF(
)*4
J=
18
Information and
Efficient Mining and Prediction of Vincent S. Tseng Software
0.435 * 4 = 1.74
73 User Behavior Patterns in Mobile and K. W. Lin (指 Technology, Vol.
Web Systems
48, No. 6, pp.
導學生)
357 - 369, 2006
Y. H. Huang (非
本 校 人 員 ), H.
Yu-Hsieh (指導學
生), C. C. Huang
( 非 本 校 人 員 ), Pediatric
Liver Hepcidin and Stainable Iron
Research, Vol.
Vincent S. Tseng,
2.875 * 4 = 11.5
74
Expression in Biliary Atresia
59, pp. 662-666,
M. H. Tai (非本校
2006
人員), C. L. Chen
(非本校人員) and
J. H. Chuang (非
本校人員)
Chun-Rong
Reconstruction and Rendering of Huang, Pau-Choo
Microcalcifications
from
Two Chung, Tong-Yee
75 Mammogram Views by Modified Lee , Sheng-Chih
Projective Grid Space (MPGS)
Yang,
San-Kan
Lee
Computerized subject category
Medical
,
Imaging
and Ranking /
=
%,
Graphics
30 (2006) pp.
J=
123-133
Lecture
IF( 1.087
J
)*4
=
4.348
Notes subject category
,
76 Multiresolution Remeshing Using C.-H. Lin, C-R on
Computer
Weighted
Centroidal
Voronoi Ran,
J.-H.Hsu,
Ranking
62
/ 71
Science,
Tong-Yee Lee
Diagram
=
87 %,
2006, May
6
0.15
0.9
曾新穆
資訊系
1
12
0.15
1.8
曾新穆
資訊系
3
(通訊 13.0 0.15
44
作者)
1.96
李同益
資訊系
3
(通訊
作者)
6
0.15
0.9
李同益
資訊系
3
24
0.15
0.54
3.6
鄭芳田
製造所
J= 2
IEEE
Subject Category
Y.-C. Su, F.-T. Transactions on
IF(0.774)*4
Prognostics
System Cheng,
M.-H. Semiconductor ENGINEERING,
77 Intelligent
MANUFACTURING
Design and Implementation
Hung, and H.-C. Manufacturing,
J= 3
Huang
vol. 19, no. 2, Ranking10/37=27.0
May 2006
%,J=8
第 18 頁,共 19 頁
3
19
IEEE
Subject Category
Y.-C. Su, M.-H. Transactions on
A Processing Quality Prognostics
IF(0.774)*4
Hung,
F.-T. Semiconductor ENGINEERING,
78 Scheme for Plasma Sputtering in Cheng, and Y.-T.
MANUFACTURING
Manufacturing,
TFT-LCD Manufacturing
J= 3
Chen
vol. 19, no. 2, Ranking10/37=27.0
May 2006
%,J=8
3
24
0.15
0.54
鄭芳田
3.6
製造所
電資學院總合計:新台幣 272.94 279.06 萬元
註:若為 SCI 論文,則(S)值為 0.15;若為 SSCI 論文,則(S)值為 0.3;若為 A&HCI 論文,每篇補助十萬元(無須計算)。
二、專書發表(須附國科會審查通過證明)
序號
書刊名
作者/出版商
出版地/出版年
ARS Press, Vienna, Austria
Pro Literatur Verlag, Mammendorf, Germany / 2006
ISBN
ADVANCED TECHNOLOGIES:
1
Research - Development Application
合計:
本次申請補助金額總計新台幣
承辦人
(分機
貳 百 捌
1
本 x 5 萬/本= 新台幣
十 肆
萬 零
) 單位主管
第 19 頁,共 19 頁
千 陸
5
萬元
百 零
十
零 元整
教師姓名
鄭芳田
製造所
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