Provisional Programme of the ISPS'12
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Tuesday, 28 August
16:00 – 18:00 ISPS’12 registration
Wednesday, 29 August
8:00 – 9:30 ISPS’12 registration
9:30
Opening session (V. Benda)
9:40-10:30
INVITED LECTURE 1
M. Rahimo: Future Trends in High Power MOS Controlled Power Semiconductors
10:30-11:00
coffee break
11.00-12:15
DEVICE PHYSICS AND TECHNOLOGY
J. Vobecky, P. Hazdra and V: Zahlava. Radiation Enhanced Diffusion of Nickel in Silicon Diodes
C. Weiß and G. Wachutka: Destructive Effects in Silicon Power Devices After the Impact of a Cosmic
Particle
M. Rahimo, J. Vobecky, C. Corvasce and Y. Otani: Thin Silicon Wafer Device Concept with
Advanced Laser Annealing and Sintering Process
13:00-14:00
lunch time
14:20-15:30
POWER BIPOLAR DEVICES
E. Pertermann, J. Lutz, H.-J.Schulze, H. P. Felsl, F.-J. Niedernostheide, S. Voss, H. Hüsken and
R.Baburske: The Effect of Selenium Deep Energy Levels in Si on the Turn-Off Behaviour of Diodes
R. Baburske and J. Lutz: Diodes using the SPEED concept: trade-off between switching ruggedness
and surge Current
N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström and J. Vobecky: Optimization
of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors
19:00-21:00
Welcome party
Thursday 30 August
8:30-10:00
DIALOG SESSION 1
G. Toulon, A. Bourennane and K. Isoird: Impact of a backside Schottky contact on the thyristor characteristics
at high temperatures
P. Hazdra, V. Záhlava, J. Vobecký, M. Berthou and A. Mihaila: Effect of Ion Irradiation on Electrical
Characteristics of 1200V SiC Schottky Diodes
P. Fernandez-Martinez, S.dor Hidalgo, D. Flores and G. Pellegrini: Edge Termination Techniques in 300 µm
Thick Silicon Reach-Through Avalanche Photodiodes
K. Górecki: Measurements of the thermal resistance of power LEDs
T. Azoui, P. Tounsi and J.-M. Dorkel: Auto-adaptive Multi-heat sources and Multi-cooling Surfaces Dynamic
Compact Thermal Model
J. Wozny: ELTER-SiC - Simulation of SiC Device Structure with Remote Access
A. Kubiak, Z. Lisik and J. Rogowski: Manufacturing and characterisation of Ni and Al contacts to n-type 4H
silicon carbide
N. Shammas.: High-Power Light Emitting Diodes (LED's) and their use in medical applications
C. Fisher, M. Jennings, S. Thomas, P. Gammon and P. Mawby: Development and Characterisation of Large
Area 4H-SiC PiN Diodes
V. Papez, J. Hajek and B. Kojecky. The Influence of Surface States on Reverse and Noise Properties of Silicon
Power Diodes
10:00-11:30
INVITED LECTURES 2
S. Pendharkar: Mixed signal and power technologies enabling power SOC and SIP
N. Kaminski and O. Hilt: SiC and GaN Devices - The different Wide Band-Gap Sisters
11:30-11:40
coffee break
11:40-13:00
ROUND TABLE DISCUSSION
13:00-14:00
lunch time
14:15 Excursion
19:30 Social dinner
Friday, 31 August
8:30-10:00
DIALOG SESSION 2
I. Cortes, J. Roig, S. Mouhoubi, V. Velayudhan, J. Rebollo, F. Bauwens and D. Flores: Numerical Modelling
of Multi-Stage HCI Degradation in Advanced STI DeMOS Transistors
U. R. Vemulapati, N. Kaminski, D. Silber, L. Storasta and M. Rahimo: Analytical Model for the Initial
Snapback Phenomena in RC-IGBTs
R. Siemieniec and O. Blank: Power MOSFET Design for Synchronous Rectification
E. Marcault, A. Bourennane and M. Breil: Mechanical stress indicators for monitoring the mechanical state of
a VDMOS power assembly: Overview and discussion
J. Marek: Temperature dependent Cauer RC network for more accurate SPICE-like circuit simulations of power
MOSFET with parasitic elements
K. Menon: Comparison of 10kV N-channel and P-channel TCIGBT
A. Balachandran: Evaluation of 1.2kV segmented cathode cell design for Trench-Gate Clustered Insulated Gate
Bipolar Transistor (TCIGBT)
A. El Khadiry, A. Bourennane, M. Breil and F. Richardeau.: Monolithically integrated switching cells dedicated
to high density power conversion
J. Böhmer and H-G. Eckel: Effect of the miller-capacitance during turn-off of IGBTs at different temperatures
A. Villamor-Baliarda, F. Bogman, D. Flores and P. Moens: Breakdown location for different Charge Balance on
Super Junction Trench-Based MOSFET devices
D. Danković, A. Prijić, I. Manić, Z. Prijić and N. Stojadinović: Measurements of Negative Bias Temperature
Instability (NBTI) in p-channel Power VDMOSFETs
10:00-10:20
coffee break
10:20-12:00
VOLTAGE CONTROLLED DEVICES
I, Sheikhian, N. Kaminski, S. Voß, W. Scholz and E. Herweg: RC-IGBT in Quasi-Resonant
Applications like Induction Cooker
Hong Long: Enhanced Dynamic Voltage Clamping Capability of 3.3kV Field-Stop Clustered IGBT
J. Urresti, S. Hidalgo and D. Flores: 3.3 kV PT-IGBT with Voltage-Sensor Monolithically Integrated
M. Dommaschk: Calculation and Evaluation of Transient Thermal Stress in the Frequency Domain
of Modular Multilevel Converters
12:00-13:00
lunch time
13:00-14:40
POWER INTEGRATION
R. Charavel, H. de Vleeschouwers, J. Baele, P. Gassot, E. De Backer and M. Tack: Development of a
Trench isolated 50V technology on an SOI substrate
E. Stefanov: Cross-talk Degradation of Current Sense Ratio in Single Die Integrated Power FETs
G. Toulon, I. Cortes, F. Morancho, K. Isoird and A. Bourennane: Analysis and Optimization of a
Novel High Voltage Striped STI-LDMOS Transistor on SOI CMOS Technology
15:00
Closing the ISPS'12