信息
周
刊
主办：图书信息中心 总第
112
(1)
期
2003 年 11 月 15 日 星期五
金融
(1) 香港金管局 60 亿救港币
科技
(2) 印度出台 2003 科技政策
(3) 科学信息
人才
(4) 全国物业管理企业经理岗培训
(5) 我国将实行注册设备监理师制度
(6) 大学生见习就业活动网上咨询开始
(7) 李佩钰谈局部经营危机不代表企业
全盘失败
产品
(8) 16 位 250K SPS 模数转换器
(9) 输入为 4.7-24V 的电池充电器
(10) AC’97 八声道音频转换芯片
(11) 用于液晶显示器和数字电视的系统
级芯片
(12) 18 位 LVDS 串联/解串器
市场
(13) 科技会展中心举行高技术产业专项
资金发放仪式
(14) 德开始关闭核电站
(15) 社科院公布中国启动新一轮税制改
革
(16) 北京生物基地选出三项方案
(17) 华为迈入小灵通领域
证券
(18) 沪深股市 A,B 股前五名
(19) 期货数据
(20) 开放式基金
(21) 国债收益率
为狙击港币上升势头，两个月来，金管局
十次干预货币市场，最终入市平抑美元兑
港币汇率维持在 7.76 水平,以维护港币与
美元挂钩的政策，此前美元兑港币的汇率
曾一度拉高至 6 年来最高水平，达 1 美元
兑 7.702 港币，当天美元兑港币汇率企稳
至 7.76 水平，随后香港金管局先后在市场
购入 4.25 亿美元，抛售港币,本周一香港
收市后，伦敦市场上美元兑港币汇率曾一
路莫高至 7.7380/90.本周二港币涨势是由
香港股市即将有 IPO 活动吸引的资金流入
导致的，香港金融管理局表示无意改变联
系汇率制度，将不会为港币兑美元升至多
少设定上限。
(2)
印度科技部长说：“2003 年科技政策为科
技与社会问题直接结合提供了一个路
图”。
1,保证每个公民都获得科学信息，让全国
人民都有可能充分参与科技发展及其应
用，为人类造福。
2,在可持续基础上，保证人民的粮食，农
业，营养，环境，水，卫生和能源的安全。
3,利用科技能力以及我们传统的知识财
富，为减轻贫困，加强生活保障，消除饥
饿和营养不良，减少苦工和城乡之间的地
区发展不平衡以及创造就业机会做出直
接和持续的努力。这就要求创造和选择一
切重要的技术，通过网络广泛传播这些技
术，并支持我们经济中的这个巨大而欠组
织的科技部门.
4,大力促进大学及其它学术，科学和工程
机构中的科学研究,也要建设和保持优秀
中心，将一些选定领域的研究的水平提高
到国际最高标准。
5,提高妇女参加一切科技活动的权力，并
保证有充分和平等地参与。
6,为了所有学术和研发机构能行使其职
能，要给予他们必需的自治和自由，以便
形成一个确实进行创造性研究的环境，同
时要保证科学技术事业充分承担其社会
职责和义务。
7,利用现代科技全部潜力保护，保全，评
价，更新，尊重和利用印度悠久文明历程
所产生的广泛知识.
8,利用更新的科技进步实现国家战略和安
全目标.
9,促进与经济和社会有重大关系领域的研究
和创新，尤其要促进私营和公共科技机构之
间的紧密，有效的互动。农业，水利，卫生
教育，工业，能源（包括可再生能源）,通信
和运输等部门将被置于最优先的地位。信息
技术，生物技术，材料科学和技术等起杠杆
作用的关键技术将享有特别重要的地位。
10,持续加强与技术发展，教育，概念吸收和
利用相关的启动机制.
11,建立知识产权制度，最大限度激发各类发
明人创造和保护知识产权的积极性，知识产
权制度也要为那些发明在国内快速有效的商
业化提供一个强有力的积极的全面的政策环
境，使公共利益最大化。
12,在信息对科技发展起关键作用的时代，要
做出种种努力来保证人们以可负担的费用，
高速，保质保量地存取信息，而且要创造印
度原创的，正确的和有用的数字化内容。
13,促进自然灾害预报，预防和损失减轻的研
究与成果应用。尤其是要重视河水泛滥，旋
风，地震，干旱和滑坡。
14,为实现国家发展和安全目标，要促进国际
合作，而且这种合作要成为我们的国际关系
的关键要素；
15，将科学知识与其它学科产生的见识结合
起来，并且保证科学家和技术专家充分参与
国家管理，让科学探求的精神和方法渗透公
共政策制订的所有方面。依靠动态，灵活的
科技政策，上述目标将能够全面实现。科技
政策要便于修订，以适应世界秩序的迅速变
化.要牢记这些大目标，须制定一项实施战略,
这项战略使得确定具体规划，计划和项目成
为可能，而且有明确的任务，必要资源的估
计和期限，实施战略的一些重要因素: 发展适
宜的机制，让各部门科学家和技术专家源源
不绝地提出有关科技政策和规划的独立见
解。发挥学术和专业机构的作用。社会经济
部门的计划与研发活动要进一步一体化。这
就要求政府的每一个社会经济部门将其总经
费的一部分用于相关的科技计划和活动。还
要鼓励和帮助各个邦通过相应的机制将科技
用于发展目的，以及为了解决他们地区和地
方特有的问题，与国家科技机构建立联系。
为了往我们的科技机构注入一种新的活力
感，一项一致的战略是必要的。各科技部局
及包括大学在内的其他学术机构，即整个科
技体系，必须切实地得到加强，给予他们充
分的自治，灵活性和排除官僚主义。政府各
个以科学为基础的部要保证由科学家和技术
专家来运作。所有主要的社会经济部局都要
有高级科学顾问机构。
政府永远保留一个最高科技顾问机构，对
制定和实施各项计划和项目给予支持。政
府要给高等教育和科学技术必要的预算
投入，通过它自己的资源以及产业界的贡
献，在第十个计划结束时（2007 年）将科
技投资水平提高到 GDP 的 2%。为此，产
业界必须明显地增加研发投资。要鼓励产
业界从经济上利用或支持教育和研究机
构。产业界必须从自身利益出发，增加研
发投资，以形成有效的重要的全球竞争
力，为使产业界增加研发投资，将发展灵
活的机制。
(3)
一 ,CELEBRATING 35 YEARS 1967-2002
FOR JOURNAL OF CRYSTAL GROWTH
AUTUST I(2002)
Properties of InGaAs/GaAsSb type II multiple
quantum well structures grown on(111)B InP
substrates by molecular beam epitaxy;
ZnO thin film grown on silicon by
metal-organic chemical vapor deposition ;
The structure and current-voltage characteristics
of multi-sheet InGaN quantum dots grown by a
new multi-step method;
A novel application to quantum dot materials ot
the active region of superluminescent diodes;
Thermal desorption effects in chemical vapor
depositon of silicon nanoparticles;
Some properties of carbon-doped GaAS using
carbon tetrabromide in solid-source molecular
beam epitaxy;
Developent of three-dimensional dislocation
density analysis code for annealing process of
single crystal ingot;
Mechanisms of heat and oxygen transfer in
silicon melt in an electromagnetic Czochralski
system;
Photoluminescence and photoreflectance of
AlGaAs/InGaAs/GaAs pseudomorphic high
electron mobility transistor structures after rapid
thermal annealing;
Strain relaxation of InP film directly grown on
GaAs patterned compliant substrate;
Defect structure of Ge-Doped CdTe;
Optimization of process conditions of selective
epitaxial growth for elevated source/drain
CMOS transistor;
Determination of crystal misorientation in
epitaxial lateral overgrowth ofGaN;
Investigations of growth of self-asembled
GaInN-GaN islands on SiC substrate by
metalorganic vapor phase epitaxy;
Magnetic stabilization of the buoyant
convection
in
the
liquid-encapsulated
czochralski process;
Growth and characterization of CdS and doped
CdS single crystals;
Generation of misfit dislocations in high indium
content InGaN layer grown on GaN;
Formation of GaN nanopillars by selective area
growth using ammonia gas source molecular
beam epitaxy;
Growth of epitaxial multilayers consisting of
alternately stacked superconducting YbaCuO
and colossal magnetoresistive LaPbMnO layers;
Process ofcrystallization in thin amorphous tin
oxide film;
The growth and annealing of single
crystalline ZnO films by low-pressure
MOCVD;
Growth of BiGeO single crystal by the
micro-pulling-down method from bismuth
rich composition;
Thin film crystal growth of BaZrO at low
oxygen partial pressure;
Growth rate predictions of chemical vapor
deposited silicon carbide epitaxial layers;
Fabication of periodic domain structure in
β-Gd(MoO) crystal;
Effects of Tl on the electrocrystallisation of
thick Au layers from Kau(CN) solutions;
Dynamics of crystal size distributions with
size-dependent rates;
Low-temperature hydrothermal synthesis of
pure
metastable
γ
-manganese
sulfide(MnS)crystallites;
Transmission
electron
microscopy
observations on fine structures of
shish-kebab crystals of isotactic polystyrene
by sprtial meting;
Carbon nanotube synthesis using a magnetic
fluid via thermal chemical vapor deposition;
二 ,JOURNAL OF CRYSTAL GROWTH
OCTOBER II 2003-11-10
Two-particle surface diffusion-reaction
models of vapour-phase epitaxial growth on
vicinal surfaces;
Direct condendation modeling for at
two-particle growth system: application to
GaAs grown by hydride vapour phase
epitaxy;
Overgrowth on InP corrugations for 1.55 μ
m DFB LDs by reduction ofcarrier gas flow
in LPMOCVD;
Influence of high-temperature AIN buffer
thickness on the properties of GaN grown
on Si(111);
Angular dependence of lateral growth rate
on the InP (111)A,B surface by liquid-phase
epitaxy;
A one-dimensioal model to pro\edict the
growth conditions of InGaAs alloy crystals
grown by the traveling liquidus-zone
method;
Dislocation-free czochralski Si cxrystal
growth without a thin neck: dislocation
behavior due to incomplete seeding;
Nucleation and initial growth kinetics of
GaN on sapphire substrate by hydride vapor
phase epitaxy ;
Domain structures in 6H-SiC wafers and their
effect on the microstructures of GaN films
grown on AlN and AlGaN buffer layers;
Critical layer thickness enhancement of InAs
overgrowth on porous GaAs;
Effect of anneal temperature on GaN nucleation
layer transformation ;
Factors affecting the fraphitization behavior of
the powder source during seeded sublimation
growth of SiC bulk crystal;
Solvothermal synthesis of Sb2S3 nanowires on
a large scale;
Uniformaity of 4H-SiC epitaxial layers grown
on 3-in diameter substrates;
Studies on single-and multi-layer InAsN
quantum dots grown by solid source molecular
beam epitaxy;
High-quality ZnO/GaN/Al2O3 heteroepitaxial
structure grown by LP=MOCVD;
Growth parameters effect on the thermoelectric
characteristics of Bi2Se3 thin films rown by
MOCVD system using ditertiary butylselenide
as a precursor;
Annealing studies on CBD grown CdS thin
films;
Prismatic faces of KDP crystal,kinetic and
mechanism of growth from solutions;
Effects of organic additives on hydrothermal
zirconia nanocrystallites;
Influence of magnetic field on the morphology
of the androgrpholide crystal from supercritical
carbon dioxide extraction-crystallization;
Explaining the formation of thin ice crystal
plates with structure-dependent attachment
kinetics;
Photochemical synthesis of Au and Ag
nanowites on a porous aluminum oxide
template;
Modeling of ammonothermal growth of nitrides;
Morphological instabilities during growth of a
rough interface: AFM observations of cobbles
on the(0001) face of synthetic quartz crystals;
Growth
of
cubic
crystals
of
cobalt-hexacyanoferrate under the octadecyl
amine monolayer;
Dependence of growth rate on initial crystal
size;
Vibroconvective mixing applied to vertical
Bridgman growth ;
三 ,JOUNAL OF CRYSTAL GROWTH
OCTOBER I(2003)
point defects in CdZnTe;
Effect of thn GaAs interface layer on InAs
quantum dots grown on InGaAs/InP using
metalorganic vapor phase epitaxy;
Cd-vacancy-related excitonic emission in CdTe;
Imaging of convection in a czochralski
crucible under ultrasound waves;
Selective epitaxial growth of 3C-SiC on
patterned Si using hexamethyldisilane by
APCVD;
Evolution and growth of ZnO thin films on
GaN(0001)epilayers via metalorganic vapor
phase epitaxy;
Effects of photoassisted epositon and/or
photoassisted annealing on characteristics of
ZnS:Mn
htin-film
electroluminescent
devices;
Crystal growth and spectral properties of
Yb3Al5O12;
Characterization of ZnSe spheres via a rapid
polyol process;
The investigation of preferred orientation
growth of ZnO films on the PbTiO-based
ceramics and tis application for SAW
devices;
Effects of the sulfur pressure on pyrite FeS2
films prepared by sulfurizing thermally iron
films;
Synthesis of ternary sulfides Cu(Au)-Bi-S
coral-shaped crystals from single-source
precursors;
Comparison of Yb:YAG crystals grown by
CZ andTGT method;
Gamma-rays and excimer laser irradiation
effect on YAG crystals;
Growth and characterization of a new
organic
nonlinear
optical
crystal:
semicarbazone
of
p-dimethylamino
benzaldehyde;
Solvothermal systhessi of nanocrystallie
TiO2 in toluene with surfactant;
Using raman cattering to study the doping
effect and low-temperature phase transition
of LiKNbO3 ceramics;
Strain accommodation of 3C-SiC grown on
hydrogen implanted Si(001) substrate;
Effects of TMIn flow rate of barrier layer on
the optical and structural properties of
InGaN/InGaN multiple quantum wells;
Interpretation of gas-liquid reactive
crystallizatio data using a size-independent
agglomeration model;
Effect of habit modifiers on the morphology
and purity of soda ash;
Measurment of thermophysical properties of
molten silicon using an upgraded
electrostatic levitator;
Membrane crystallization of lysorzyme:
kinetic aspects;
Study of the dolubility and the metastable
zone of 1,3-dihydroxyacetone for the
drowning-out process;
Comtrollable synthesis of nanocrystalline gold
assembled whiskery structures via sonochemical
route;
Denddritic growth of PbS crystals with different
morphologies ;
Crystallogenesis studies of proteins in agarose
gelcombined effect of high hydrostatic pressue
and pH ;
Solubility and crystallization of xylose
isomerase from streptomyces rubiginosus;
Air-hydrate crystal growth in polar ice;
Growth and characterization of high-quality
SrFeP
Single crystals;
四 ,JAPANESE JOURNAL OF APPLIED
PHYSICS AUGUST 2003-11-10
Evaluation of band-gap energies and
charadterization of nonradiative recombination
centers of film and bulk GaN crystals;
Growth of high electron mobility transisitor
structure with InAIP carrier supply layer ;
Direct growth of high-quality InP layers on
GaAs substrates at low temperature by
metalorganic vapor phase wpitaxy;
Femtosecond pump-probe spectroscopy of
GaAs crescent quantum wires;
Effect of silicon nitride cap on the activation fo
implanted silicon in gallium arsenide;
Stress
effect
on
aluminum-inducecd
crystallization of sputtered amorphous silicon
thin films;
Large area deposition of polymorphous silicon
by plasma enhanced chemical vapor deposition
at 27.12 MHz and 13.56MHz;
Crystal structure analysis of metalorganic
chemical vapor depositon-βFeSi2 thin film by
X-ray diffraction measurement ;
Characteristics and growth mechanism of ZnO
whiskers fabricated by vapor phase transpor;
Voltage-controlled
phase
shifter
with
traveling-wave field-effect transistors;
An investigation of direct-current characteristics
of composite-emitter heterojunction bipolar
transistors;
Properties of pulsed –laser-deposited CuI and
characteristics of constructed dye-sensitized
TiO2 dye CuI solid-state photovoltaic solar
cells;
Drift and hysteressi effects on AIN/SiO2 gate
pH ion-sensitive field-effect transistor ;
Interfacisl
state
density
and
conductance-transient
three-dimensional
profiling of disordered-induced gap states on
metal insulator semiconductor capacitors
fabricated from electron-cyclor\tron resonance
plasma-enhanced chemical vapor deposited
SiONH films;
0.5μm silicon-on-sapphire metal oxide
semiconductor field effect transistor for RF
power amplifier applications;
Simulation
of
ultrathin
body
silicon-on-insulator
metal-oxide-semiconductor
field-effect
transistors based on drift-diffusion model
incorporating an effective potential;
The effects of nodular colloidal silica on
chemical mechanical polishing;
Impact of NF3-added interlayer dielectric
high density plasma process on hump effect
in submicron n-type metal oxide silicon
field effect transistor ;
Control of SCI wet cleaning process for
nano-scle gate oxide integrity;
Metal oxide semiconductor field effect
transistor chanracteristics with iridum gate
electrode on atomic layer deposited ZrO2
high-k dielectrics;
Correlation between threshold voltage and
the S-factor of polysilicon thin-film
transistors and the changes due to bias
stress;
Observation of mesoscopic structures in
NdBaCuO b small-angle neutron scattering;
Growth of single phase BiSrCaCuO
whiskers using optimized
starting
compositions for glassy precursors;
Magnetic states and magnetization process
in Ni-Fe sub-micron cup-shaped dots;
Stray-field-driven
switchable
superconducting devices;
Thickness dependences of nucleation and
annihilation fields of magnetic vortices in
submicron supermalloy dots;
Temperature-insensitive second-harmonic
generation at 0.5321 μm in Yca4(BO3)3;
Second
harmonic
generation
from
Yal3(BO)4-containing
glass-ceramis
prepared
by
thermal
poling
of
Y2O3-Al2O3-B2O3 glasses;
Generation of squeezed vacuum using
spectral filter by spatial light modulator and
nonlinear polarization interferometer;
Piezoelectirc and spontaneous polarization
effects on many-body optical gain of
wurtzite InGaN/GaN quantum well with
arbitrary crystal orientation;
CW-measurements of common cavity
semiconductor lasers;
Injextion-locking of blue laser diodes and its
application to the laser cooling of neutral
ytterbium atoms;
Electronic structure of Al2O3 thin film
studied using first-principle band
calculation ;
Annealingbehavior of donorlike defects
induced by high-fluence irradiation of
high-energy
particles
in
p-type
silicon;
Light polarization by cholesteric
layers;
Determination
of
mean-field
coefficients of ferroelectric liquid
crystals;
Morphology of small particles of binary
systems
forming
complete
solid
solutions prepared by gas-evaporation
technique;
Temperature
dependence
of
sound
velocity
in
high-strength
fiber-reinforced plastics;
Electric signals accompanying fracture
of granite;
Hardness and oxidation resistance of
perovskite-type solid dolution of the
SvRh3C system ;
The relationship between the eutectic
and melting point temperatures of biary
alloys under high pressure;
Fabrication and optical property of
GaSe thin films grown by pulsed laser
deposition;
Processing and properties of rare earth
ion-doped bismuth titanate thin films
by chemical solution deposition method;
Preparation of lithium niobate thin
film by thermal chemical vapor
deposition;
Characterization of α -NPD thermally
deposited
on
Hydrogen-terminated
sigle-crystal
chemical-vapor-deposited diamond films
structural sturdy of Si(111)(2√3x2√
3)R30℃-Sn surfaces;
Physical and barrier properties of
plasema-enhanced
chemical
vapor
deposited α -SiCNH:H films with
different hydrogen contents;
Hydrogen
storage
phenomenon
in
amorphous phase of hydrogenated carbon
nitride;
Photocatalytic characteristics of
TiO2 thin films prepared by Dc
reactive magnetron sputtering with
added H2O;
Dynamic behavior of carbon deposited
on tungsten surface due to carbon ion
bombardment and its influence on
ion-solid interactions ;
Theoretical study on the scanning
tunneling microscopy image of
Cl-adsorbed Si(001);
Simple method for depleted uranium
determination;
Control of the locked mode in aa
reversed –field pinch plasma using
a rotinating toroidal field;
Hydrodynamic implosion simulation
including relativistic effects on
petawatt-class pulse heating;
Performances of Ne-like Ar soft
X-ray laser using capillary Z-pinch
discharge;
A simple cold-electrode erosion
model
for
non-stationary
arc
spots:I. Application to electric arc
heaters;
Calculation of sputtering rate
during a plasema-assisted process;
Electron transport in nonorthogonal
crossed DC electric and magnetic
fields;
Developmemnt
of
a
compact
time-of-flight mass spectromenter
with a length of 1m ofr processing
plasma diagnostics;
Ozone production efficiency in
atmospheric
dielectric
barrier
discharge
of
oxygen/rare-gas
mixturd;
Radical species formed by the
catalytic decomposition of NH3 on
heated W surfaces;
Mass
transfer
process
by
magneto-convection
at
a
solid-liquid
interface
in
a
heterogeneous vertical magnetic
field;
Photovoltaic
characteristics
of
copper
phthalocyanine-poly(p-pheny-lene
Co-evaporation films;
Preparation and electrical properties
of metallized polyvinyl acetate-silver
nitrate/polyethylene
terphthalate
films;
Scanning
tunneling
microscopy
boservation of apparent molecular
motion induced by polarity change of
electric fields;
Wavelet analysis of partial discharge
acoustic
signals
in
a
model
transformer;
Limited-diffraction-beam
ultrasoud
transducers of conical type with
enhanced time resolution fabricated
using
a
functionally
graded
piezocomposite;
Analysis of time constant of calculable
AC/DC resistors for the phase angle
standard;
A
multifunctional
sensor
for
concentrations of ternary solution with
NaCl and sucrose employed in osmotic
dehydration process;
Grid-controlled
extraction
of
low-charged ions from a laser ions from
a laser ion source;
Tempertature measurement using a dual
frequency
coustic
delay
line
oscillator;
Strain evaluatio for sapphire using a
microfocus X-ray diffraction system ;
Transition
probability
and
polarization of final photons in
nonlinear Compton scattering for
linearly polarized laser;
Overshooting
phenomenon
in
the
hyperbolic heat conduction model
synthesis of HfO2 whiskers by chemical
vapor deposition techique operated
under atmospheric pressure;
The nano-memory devices of a single wall
and peapod structural carbon nanotube
field effect transistor;
五 ,JAPANESE JOURNAL OF APPLIED
PHYSICS 1 AUGUST
novel liquid phase epitaxy(LPE) growth
method for growing large GaN single
crystals: introduction of the flux film
coated-liquid phase epitaxy (FFC_LPE)
method;
Ohomic contact formation for N-type
diamond by selective doping;
A UV light-emitting diode incorporating
GaN quantum dots;
Tc-enhanced
codoping
method
for
GaAs-based
dilute
magnetic
semiconductors;
Tight-binding calculation of current
distribution in a porphin connected to two
semi-infinite wires;
Improved annealing process for electroless
Pd Plating induced crystallization of
amorphous silicon;
Insitu
resistance
measurement
of
nickel-induced lateral crystal-lization of
amorphous silicon;
Origin of the improved performance of
high-deposition-rate
micro-crystalline
silicon solar cells by high-pressure glow
discharge;
Preparation of ZnO thin films on sapphire
substrates by sol-gel method;
Contact resistance in schottky contact
gated-four-probe a-Si thin-film transistor;
Characteristics
under
bias-temperature-stress
of
Cu/Lpw-k
a-SiCO:H structures prepared by plasma
enhanced chemical vapor deposition using a
hexamethyldisilane preursor and Cu
sputtering magnetooptical kerr effect of
semiconductor-based multiplayer structures
containing a GaAs:MnAs granular thin film;
Field induced structural transformation in
MnAs;
Distributed reflector laser integrated with
active and passive grating sections using
lateral quantum confinement effect;
Development of an intensity stabilized laser
system with frequency offser of 9.2GHz;
Diffraction properties of volume holograms
recorded in SiO2 nanoparticle-dispersed
methacrylate photopolymer films;
A new gain-clamped L-band erbium-doped
fiber amplifier with highly efficient gain;
Identification of potential estogenic
environmental pollutants by terahertz
transmission spectroscopy;
Photoluminescence properties of ZnO thin films
grown by electrochemical depositon;
TiO2/C composite microcoils and TiO2 hollow
microcoils with high photocatalytic activities
and electromagnetic(EM) wave absorption
abilities;
Band structure of TiO2-doped yttria-stabilized
zirconia probed by soft-X-ray spectroscopy;
In situ raman spectroscopy observation of
crystallization process of sol-gel derived
BiLaTi3O12 films;
New ferroelectric BaTi2O5;
Synthesis and electrical properties of Sr- and
Nb-cosubstituted BiSrTiNbO polycrystalline
thin films;
Seedless fill-up of the damascene structure only
by copper electroless plating;
Lpw temperature growth of wpitaxial LaSrMnO
thin films by an excimer-laser-assisted coating
pyrolysis process;
Gas temperature evolution fo the gravity –free
gas arc discharge under a parabolic flight of jet
plane;
Photoassisted electrochemical deposition of
copper from a athocuproin complex;
Benefits of flat polymer dielectric surface
loading organic semiconductors in field-effect
transistors prepared by electrode-peeling
transfer;
Tuning of laser frequency in random media of
dye-doped polymer and glass-particle hybrid;
A first-order matrix approach ot the analysis of
electron beam emittance growth caused by
coherent synchrotron radiation;
Delivery of photosensitizer to cells by the stress
wave induced by a single nanosecond laer pulse;
Flexible control of electrode pattern on
cultivation chamber during cultivation of cells
using nondestructive optical etching;
Addition of functional characteristics of organic
phtotchromic dye to nano-structures by selective
doping on a polymer surface;
六 ,JAPANESE JUORNAL OF APPLIED
PHYSICS 15 AUGUST 2003-11-10
STRUCTURE AND PROPERTIES OF
SILICON THIN FILMS DEPOSITED AT LOW
SUBSTRATE TEMERATURES;
Enhanced water-window X-ray pulse generation
from femtosecond-laser-produced plasma with a
carbon nanotube target;
Effects off low-oxygen-contents metalorganic
precursors on AlInAs buffer layer;
Enhanced field emission of boron nitride
nanofilms on roughened GaN substrates;
Rapid energy transfer annealing for the
crystallization of amorphous siliscon;
Homoepitaxial growth of high-quality
Zn-polar ZnO films by plasma-assisted
molecular beam epitaxy;
Fabrication of full high-Tc superconducting
YbaCuO trilayer junctions using a polishing
technique;
Magnetoresistance
effect
of
Co/AlO/NiFe/Au/n-Si diode structure ;
Amplified
spontaneous
emission
measurement of GaInNAs laser wafers with
and without rapid thermal annealing;
Resistance of LiCaAlF6 single crystals
against F2 laser irradiation;
High-luminance
multicolor-emitting
thin-film electroluminescent devices using
(Y2O3-Ga2O3):Mn phosphors;
Ion beam induced effects in RF plasma
chemical vapor deposition deposited
hydrogenated amorphous carbon thin films;
Laser damage threshold of ceramic YAG;
Preparation of fulerene by pulsed wire
discharge;
Prduction of liquid cluster ions for surface
treatment;
Field
emission
from
bamboo-like
multiwalled carbon nanotube arrays
enhanced by mild oxidation;
七,JOURNAL OF APPLIED PHYSICS 15
OCTOBER 2003
Fluorescence intensity ratio technique for
optical fiber point temperature sensing;
Perfect two-dimensional porous alumina
photonic crystals with duplex oxide layers;
Beam fanning reversal in the ferroelectic
relaxor SrBaNbO at hige external electric
fields;
Optical nonlinear properties and optical
limiting for [(n-Bu)4N]4[MoS4Cu]4;
Simultaneous, multiplayer plasma etching
and deposition of fluorocarbon layers on
silicon;
Prebreakdown phenomena and formation
processes of low pressure glpw discharges
in N2,O2 and N2/O2 mixtrues;
Analytical fit of the I-V characteristic for
cylindrical and spherical langmuir probes;
Influence of the expansion dynamics of
laser-produced gold plasmas on thin film
stucture grown in various atmospheres;
Aluminum oxynitride at pressures up to 180
Gpa;
Postgrwth annealing of defects in ZnO
studied by positron annihilation,x-ray
diffraction,
Rutherford
backscattering,
cathodoluminescence,
and
Hall
measurements;
Optical
characterization
of
AIN/GaN
heterostructures;
Experimental findings in support of atomic
transport of hydrogen in silica ;
Fictive temperature dependence of density
fluctuation in SiO2 glass;
Enhancement of sp3 hybridized C in amorphous
carbon films by Ar ion bombardment and Si
incorporation;
Modeling the absorption spectra of Er3+ and
Yb3+ in a phosphate glass;
Formation of self-asembled epitaxial nickel
nanostructures;
Gd on GaN(0001) surface: gurwth ,interaction,
and fermi lievel movement;
Stress development in sputtered InO thin films
during heat treatment;
Atomic stucture of random and c-axis oriented
YmnO3 thin films deposited on Si and Y2O3/Si
substrates;
Selecttively excited photoluminescence of
GaAsN single quantum wells;
Temperature and thickness dependence of
molecular orientation of α -sexithienyl on
Cu(111);
Observation of reflection high-energy electron
diffraction
oscillation
during
metalorganic-molecular-veam epitaxy of AlAs
and control of carbon incorporation;
Brilouin scattering in planar waveguides .I.
numerical model;
Brilouin scattering in planar waveguides. II.
Experiments;
Arsenic incorporation into InGaPsP grown by
low-pressure metalorganic vapor phase epitaxy
using
tertiary
butylarsine
and
tertiarybutylphosphine in N2 ambient;
Optical, photoelectric, and photorefractive
properties of Ti-doped CdTe crystals;
Dose dependence of carrier and heat dynamics
at an ion-implanted silicon surface measured
using lens-free heterodyne transient grating
method;
Viscosity and elastic constants of thin films of
amorphous Te alloys used for optical data
storage ;
Capillary
condensation
monitored
in
birefringent porous silicon layers;
Configurations, energies, and thermodynamics
of the neutral MgH complex InGaN;
Anisotropy of optical properties of conjugated
polymer
thin
films
by spectroscopic
ellipsometry;
Temperature dependence of the radiative
recombination coefficient of intrinsic crystalline
silicon;
Modeling plate impact response of
particle-polymer composite;
Influence of local heating on micro-raman
spectroscopy of silicon;
Transient enhanced diffusion of arsenic in
silicon;
Transition metal ion implantation into
AlGaN;
Time resolved dynamics of rapid melting
and resolidification of Sb thin films under ns
and ps laser pulse irradiation nanofluids
containing mutiwalled caron nanotubes and
thir enhanced thermal conductivities;
Ab initio study of 3C inclusions and
stacking fault-stacking fault interactions in
6H-SiC;
Low-temperature GaAs flims grown on Ge
and Ge/Si/Ge/Si substrates;
Fokker-planck approach to extending the
one-flux method of carrier transport in
semiconductors to variable energies;
Temperature
dependent
contactless
electroreflectance study of intersubband
transitions
in
a
self-assembled
InAs/InP(001) quantum dot structure;
Optical injection and coherent control of a
ballistic charge current in GaAs/AlGaAs
quantum wells;
Ful band modeling og the excess current in
a delta-doped silicon tunnel diode;
Electrical characterization of InGaN/GaN
light emitting diodes grown by molecular
beam epitaxy;
Magnetoresistance in step-edge junctions
based on LaSrMnO3 films;
Role of interface states in electronic
properties of (ZnSe/Si2(001) superlattices;
Infuence of ferromagnetic substrate on the
magnetoresistance of Cr film across a
nonmagnetic insulatinglayer;
Photothermal investigations of thermal and
optical properties of GaAlAsSb and AlAsSb
thin layers;
Intersubband absorption in V-groove
quantum wires;
Simple
one-dimendional
model
for
electronic stucture calulation of unbiased
and bis\ased silicon quantum dots in
coulomb lbockade applications;
Metallic
prcipitate
contricution
to
generation and recombination currents in
p-n junction devices due ti the schottky
effect;
Photocarrier
transport
in
undoped
microcrystalline silico studied vy the
modulated photocurrent technique;
The electronic structure and lithiation of
electrodes based on vandiumoxide nanotubes ;
Stranend
silicon
on
SiGe:temperature
dependence of carrier effective masses;
Local structure of LIB3O5 single crystal from
7Li nuclear magnetic resonance;
Spin reorientation induced by Ni atoms in
Fe/Cu(001);
Optimized pulse laser depositied barium ferrite
thin filmd with narrow ferromagnetic resonance
linewidths;
Numerical modeling of magnetoelectric effect
in a composite structure;
Effect of magnetic bias field on magnetoelectric
coupling in magnetoelectric composites;
x-ray diffraction and mossbauer studies of
structural changes and Li ordefing kinetics
during annealing of polycrystalline Fe51Pt49
thin films;
dielectric
relaxation
in
laser
ablatedpolycrystalline ZrTiO4 thin films;
properties and lanthanum distribution of
BiLaTiSrBiLaTiO intergrowth ferroelectrics;
nonlinear electri field dependence of
piezoresponse in epitaxial ferroelectric lead
zirconate titanate thin films;
structural and dielectric properties of
Ga-modified
BiFeO3-PbTiO3
crystalline
solutions;
electron beam generation in a diode with
different ferrelectric cathodes;
leakage current and relaxation characteristics of
highly(111)-oriented lead calcium titanate thin
films;crystallographic and optical properties of
epitaxial Pb(Zr,Ti)O3 thin films grown on
LaAlO3 substrates;
model of the polarization response of
single-crystal lead magnesium niobate-lead
titanate for transducerapplications;
frequency and teperature dependent dielectric
and conductivity behavior of KnbO3 ceramics;
effects of La substituent on ferroelectric
rhombohedral/tetragonal morphotropic phase
boundary
in(1-x)(Bi,La)(GaFe)O3-xPbTiO3
piezoelectric ceramics;
defects in CeO2/SrTiO3 fabricated by automatic
feeding epitaxy probed using positron
annihilation;
electric field induced piezoelectric resonance in
the micrometer ot millimeter waveband in a thin
film SrTiO3 capacitor;
Optomechanical effect in ferroelectric liquid
crystal freely suspended films;
Origin and implications of the observed
rhombohedral phase in nominally tetragonal
Pb(ZrTi)O3 thin films;
Allowed mesoscopic pont group symmetries
in domain average engineering of perovskte
ferroelectric crystals;
Improved ferroelectric and pyroelectric
properties in Mn-doped lead zirconate
titanate thin films;hybrid silicon-organic
nanoparticle memory device;
Self-assembly
of
well-aligned
gallium-doped
zinc
oxide
nanorods;self-orgnazed grwth and optical
emission of silicon-based nanoscale β-SiC
quantum dots;
Low
temperature
deposition
of
nanocrystalline silicon carbide films by
plasma enhanced chemical vapor depositon
and
their
structural
and
optical
characterization;
Effect of humidity on the ac conductivity of
nanoporous TiO2;
Elastic and mechanical properties of
transparent nanocrystallized KnbGeO5
glass;
Modeling of charge quantization and wave
function
penetration
effects
in
a
metal-oxide-semiconductor system with
ultrathi gate oxide;
Magnetic storage device using induced
magnetic reversal of a cobalt element array;
Influence of rapid thermal annealing on a 30
stack InAs/GaAs quantum dot infrared
photodetector;
Tuning the emission characteristics of
top-emitting orgnic light-emitting devices
by means of a dielectric capping layer: an
experimental and theoretical study;
Origin of hole-like peaks in current deep
level transient spectroscopy of n-channel
AlGaAs/GaAs heterosturcture field-effect
transistors;
Effect of field dependent trap occupancy on
organic thin film transistor characteristics;
Invertibility of current density from
near-field electromagnetic data;
Staircase-liked metamagnetic transitions in
phase-separated manganites: influence of
thermal and mechanical treatments;
High conductivity modulation doped
AlgaN/GaN
multiple
channel
heterostructures;
Characterization of amorphous GeSiP for
micromachined
uncooled
bolometer
applications ;
Curvaturd estimation for multiplayer hinged
structures with initial strains;
Micorstructure changes in fired ceramics
quantified by magnetic resonance relaxation
and imaging;
Numerical
modeling
of
large-area
electron-beam diodes for KrF lasers;
Geologic lithofacies identification using the
multiscale character of seismic reflections;
Magnetic resonance imaging of convetion in an
electrolyte solution and extrcellular fluid
associated with stationary electric currents;
Influence of electrode configuration and liquid
crystalline polymer tye on electroheological
effect;
Effect of metal underlayers on low temperature
silicon growth ;
Alternated high-and low-pressue nitriding of
austenitic stainless steel: mechanisms and
results;
Secondary electron emission and self-consistent
charge transport and storage in bluk insulators:
applications to alumina;
Improvement of the thermal stability of silver
metallization ;
Influence of Ta/Si atomic ratio on the
interdiffusion between Ta-Si-N and Cu at
elevated temperature ;
Optical properties of GaSe grown with an
excess and a lack of Ga atoms ;
Electron transport through coupled quantum
dots;
Rapid single-flux quantum logic using π
-shifters;
Improved
metal-oxide
–oxide-nitride-oxide-silicon-type flash device
with high-k dielectrics for blockinglayer;
Decrease of breakdown voltages for
micrometer-scale gap electrodes for carbon
dioxide near the critical point: temperature and
pressure dependences;
InSb high-speed photodetectors grown on GaAs
substruate ;
Perpendicular magnetic anisotropy of LaSrMnO
thin films grown on CaMnO3 buffered SrTiO3;
Magnetoresistance oscillations induced by
intersubband scattering of two-dimensional
electron gas in AlGaN/GaN heterostructures;
Emitter injection efficiency and base transport
factor in InAs bipolar transistors;
Linewidth enhancement factor of a type-l
quantum-cascade laser;
Preparation
and
characterization
of
nanostructured film of graphitized diamond
crystallites for field electron emission;
Current and spin-fitering dual diodes based on
diluted magnetic semiconductor heterostructures
with a nonmagnetic barrier;
Identification of the mechanism-limiting
mitrogen diffusion in metallic alloys by in situ
photoemission wlwctron spectroscopy;
八 ,JOURNAL OF APPLIED PHYSICS
1OCTOBER 2003
Phase conjugation and perfect lensing;
Multiple photonic band gaps in the
structures composed of core-shell particles;
InGaAsSbN: a dilute nitride compound for
midinfrared optioelectronic devices;
Magnetic insulation of a space-charge
dominatedflow;
Remote hydrogen plasma rocessing of ZnO
single crystal surfaces;
Emission and relflection spectra from
AlGaN/GaN single heterostructures;
Spontaneous
emission
,light-current
characteristics, and polarization bistability
range in vertical-cavity surface-emitting
lasers;
Intrinsic stress evolution in laser deposited
thin films;
x-ray photoelectron spectroscopy and
magnetic properties in De-SiO2 granular
films;
field enhanced diffusion of nitrogen and
bornon in4H-silicon carbide;
laser induced transformation of TiSi2;
structural and optical characterization of
porous anodic aluminum oxide;molecular
dynamics simulations of asperity shear in
aluminum;
cathodoluminescence characterization of
dislocations in gallium nitride using a
transmission electron microscope;
shock viscosity and rise time of explosion
waves in geologic media ;
crystalline orientation of polycrystalline
silicon with disklick grains produced by
silicide-mediated
crystallization
of
amorphous silicon;
color center formation in soda-lime glass
with femtosecond laser pulses;
compositional dependence of raman
scttering and photoluminescence emission
in CuGaSe thin films;
recovery of close frenkel pairs produced by
low energy recoils in SiC;
monte carlo simulation of organic
lifht-emitting devices under alternating
applied field;
complementary infrared and transmission
electron microscopy studies of te effect of
high temperature-high pressure treatments
on oxygen-related defects in irradiated
dilicon ;
infrared spectroscopic study on the
langmuir-blodgett films of merocyanine
dye-arachidic acid-n-octadecane ternary
system;
three-dimensional simulation of rapid melting
and resolidification of thin Si films by excimer
laser annealing;
improved depth profiling with slow positrons of
ion implantation-induced damage in silixon ;
raman study of Mg,Si,O and N implanted GaN;
specific heat and magnetic properties of
NdSrMnO and RcaMno(R=Nd,Sm,Dy, and Ho);
line shape analysis of electron –hole plasma
electrolumiescence in fully strained SiGe
epitaxial layers;
crystallization and phase separation in GeSbTe
thin films;
photoluminescence
behaviors
from
stoichiometric gadolinium oxide films;
near-absolute hugoniot measurements in
aluminum to 500 Gpa using a magnetically
accelerated flyer plate technique;
ion beam smoothening of metal surfaces;
trapping of negative and positive charges in Ge+
ion implanted silicon dioxide layers subjected to
high-field electron injection;
electrothermal failure of metallized film
capacitor end connections-computiation of
temperature rise at connection spots;
temperature dependence of the fundamental
band gap of InN;
electron
valence-band
tunneling-induced
lorentzian noise in deep submicron silicon-on
–insulator metal-oxide-semiconductor field
–effect transistors;
electrical transport within polymeric amorphous
carbon thin films and the effects of tion
implantation ;
injection-limited electron current in a
methanofullerene;
numercal investigation on the current mirror
effect in a single-electron turnstile capacitively
coupled to a one-dimensional array of small
junctions ;
improvement in the thermoelectric properties of
pressure-tuned β-K2Bi8Se13;
self-consistent
calculation
of
subband
occupation and electron –hole plasma effects :
variational approach to quantum well states with
hartree and exchange-correlation interactions;
effect of spin orbit on the electronic properties
of zinc-blende compounds;multiple-level defect
species evaluation from average carrier ecay;
effects of a the AlAs layer on InAs quantum dot
electronic structure;
luminescence energy and carrier lifetime in
InGaN/GaN quantum wells as a function of
applied biaxial strain;
Magnetic anisotropy and switching process
in diluted GaMnAs magnetic semiconductor
films;
Soft/hard
exchange-coupled
layered
structures with modulated exchange
coupling;
Domain structure in joule-heated CoFeSiB
glass-covered
amorphous
microwires
probed
by
magnetoimedance
and
ferromagnetic resonance;
Exchange anisotropy determined yb
magnetic field dependence of ac
susceptibility;
Characterizing the interphase dielectric
constant of polymer composite materials:
effect of chemical coupling agents;
Optical properties of p-type in-doped
SrTiO3 thin films ;
Microstructural evolution and macroscopic
property relationship in antiferroelectric
lead lanthanum stanate zirconate titanate
ceramics;
Temperature and frequency characteristics
of the interfacial capacitance in thin-film
barlum-strontium-titanate capacitors;
Capacitance-voltage
characteristics
of
NaNbO3thin films;
On crystallite size dependence of phase
stability of nanocrystalline TiO2;
Chemical-state analysis for low-dimensional
Si and Ge films on graphite;
Hydrogen content and density in
annocrystalline carbon films of a
predominant diamond character;
Grain size analysis of C54-YiSi2 under
different
processing
conditions
for
deep-submicron polycrystalline silicon gate
length;
Displacement and polarizationswitching
properties of piezoelectric laminated
actuators under bending;
Effect of depositon conditions of poly SiGe
films and Ge atoms ofn the electrical
properties of poly SiGe/HfO2 gate stack;
Reversible
electrostatic
control
of
micromechanical
structure
tunneling
characteristics;
Refrigerator with phonon filters: an
application of the phonon deficit effect in
superconducting tunnel junctions;
Improved detection of themally induced
higher resonance modes and harmonics of a
microcantilever;
Optical anteneas: resonators for local field
enhancement;
Formation of GaAs three-dimensional objects
using AlAs “facet-forming” sacrificial layer and
H3PO4,H2O2,H2O based solution;
Electronic stucture studies of the buried Ni layer
in a Cu/Ni/Cu multiplayer by resonant
photoemission at the NiL3 edge;
Auger mechanism of exoelectron emission in
dielectrics with high electron affinity;
Electrochemical
kinetics
of
hydrogen
intercalation in gadolinium switchable mirrors;
Heating in mesa structures;
Spin-polarized vacuum tunneling in field
emission from Co-coatedW(111) tips;
Investigation of antiphase domain annihilation
mechanism in 3C-SiC on Si substrates;
Measurements of cooling by room-temperature
themionic emission across a nanometer gap;
Suppression of native oxide growth in sputtered
TaN films and its application to Cu electroless
plationg;
Influence of the polarization on interfacial
properties
in
Al/SiO2/GaN/AlGaN/GaN
heterojunction metal-insulator-semiconductor
structures;
Influence of band folding in InAs/GaSb
superlattices;
Low-loss optical planar waveguides in YVO4
produced by silicon ion implantation at low
doses;
Molecular coulomb islands for single-electron
tunneling in SiO2/molecular layer/SiO2
multilayers on Si(100);
Effect of chemical substitution on the electronic
properties of highly aligned thin films of
SrAFeMoO6;
Optical
properties
ofmolecular
beam
epitaxy-grown ZnMnTe thin films measured by
complementary techniques;
High quality type II InAs/GaSb superlattices
with cutoff wavelength –3.7
Μm using interface engineering;
Spin injection at heusler/semiconductor
interfaces: first-principles determination of
potential discontinuity and half-metallicity;
Giant
magnetoresistance
in
MnCuSb
compounds carbazole-functionalized europium
compiex and its high-efficiency organic
electroluminescent properties;
九 ,JOURNAL OF VACUUM SCIENCE &
TECHNOLOGY A SEPTEMBER/OCTOBER
2003
preliminary program of the AVS 50th
international symposium;
Electrical characteristics of ZrO2 prepared by
electrochemical anodization of Zr in an
ammonium tartrate electrolyte;
Titanium alloy material with very low
outgassing;
Controlling the composition of TiAlN thin
films by modifying the number of TiN and
AlN subcycles in atomic layer deposition;
Atomic layer deposition of zirconium
silicate
films
using
zirconium
tetra-tert-butoxide and silicon tetrachloride;
Mtrology of 1-10 nm thick CN films:
thickness, density, and surface roughness
measurements;
Real-time etching monitor using argon
quadrupole mass spectrometry for 100 nm
class WsiN gate fabrication;
Preparation
and
characterization
of
superhard boron-suboxide films;
Properties of Au and Ag schottky diodes
prepared on undoped n-ZnO;
Deposition pressure dependence of internal
stress in TiN films deposited by filtered
cathodic vacuum arc;
Etch characteristics of (Pb,Sr)TiO3 thin
films using CF4/Ar inductively coupled
plasema;
Surface
reaction
of
bis(terbutylimido)bis(diethylamido)tungsten
precursor on Si(100)-(2x1);
X-ray photoelectron spectroscopy and
secondary electron yield analysis of Al and
Cu samples exposed to an accelerator
environment;
Ultrathin copper aluminum and nickel
aluminde protective oxidation studied with
an x-ray photoelectron spectrometer;
Corrosion behavior of sputter-deposited TiN
thin films;
The role of trapped Ar atoms in the
mechanical properties of boron carbide
films deposited by dc-magnetron sputtering;
Method
to
characterize
the
three-dimensional distribution of focused
ion beam induced damage in silicon after 50
keV Ga+ irradiation;
Optimization of secondary
ion mass
spectrometry detection limit for N in SiC;
Oxygenated polymeric thin films deposited
from toluene and oxygen by remote plasma
enhanced chemical vapor deposition;
Influence of the incident angle of energetic
carbon ions on the properties of tetrahedral
amorphous carbon(ta-C) films;
Focusing of MeV ion beams by means of
tapered glass capillary optics;
Plasma load characteristics of pulsed –bias
arc ion plating;
Reaction between nitrogen gas and silicon
species during pulsed laser ablation;
Investigation of interactions between inert gases
and nitrogen in direct current triode discharges;
Mechanisms for deposition and etching in
fluorosilane plasma processing of silicon;
X-ray diffraction analyses of titanium coatings
produced by electron beam evaporation in neon
and argon inert gases;
Study of C4F8/N2 and C4F8/Ar/N2 plasmas for
highly selective organosilicate glass etching
over Si3N4 and SiC;
Initial growth stage of nanoscaled TiN films:
formation of continuous amorphous layers and
thickness-dependent crystal nucleation;
Measurements of neutral plasma species in an
argon/isopropyl alcohol plasma for the
deposition of organic films;
Observation of the phase formation in Fe-N
films deposited by reactive pulsed laser
deposition;
Damage effects from medium-energy ion
bombardment during the growth of cubic-boron
nitride films;
Composition control and dielectric properties of
bismuth zinc niobate thin films synthesized by
radio-frequency magnetron sputtering;
Evidences for dry deintercalation in layered
compounds upon controlled surface charging in
x-ray photoelectron spectroscopy;
Structural and electrical characteristics of the
interfacial layer of ultrathin ZrO2 films on
partially strain compensated SiGeC layers;
Measurement of charge-separation potentials in
GaAsN;
Photoinduced anisotropy of second-harmonic
generation
from
azobenzene-modified
alkylsiloxane monolayers;
Photodesorption of gases in vacuum glazing;
Fluorinated amorphous carbon films prepared
by plasema enhanced chemical vapor deposition
for solar cell applications;
Influence of sputtering conditions on
microstructure and mechanical properties of
Zr-Si-N
films
prepared
by
radio-frequency-reactive sputtering;
Mass spectral resolution of F+ and H3P+ in
very high vacuum;
(4)
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人事部，国家质检总局联合发文，将于 2003
年 12 月 1 日起，在全国建立注册设备监理师
制度。通过考试取得中华人民共和国注册设
备监理师执业资格证书，并经注册后即可在
受聘的设备监理机构中根据设备监理合同独
立执行相应专业设备工程的监理业务，原则
每年举行一次考试。
(6)
第一系列的网上咨询活动将于 11 月 24 日至
23 日 每 晚 19:00-20:30 举 行 ， 网 址 是 ：
http://jobsohu.com ,大学生见习就业活动组委
会精心安排了网上互动式咨询活动，邀请知
名企业老总，职业规划师，测评专家，政府
官员以及往届毕业生来到网上论坛，与广大
学生面对面，回答它们心中的疑问和困惑，
为它们提供实习与见习，勤工俭学和就业岗
位。咨询电话：021-63906611
(7)
经营危机常出现在企业做大后，有的企业是
因为向多元化发展，有的是因为转型失败。
在李佩钰看来，多元化发展的企业由于面临
未知领域，要超越就有未知，就容易产生危
机。转型时期容易出现经营危机，这是对企
业竞争力的考验。企业不可能靠一个产品吃
一辈子，就像演员不能凭着一部电影永远走
红的道理一样，成功的企业转型失败后会做
另一种调整或转型，一般来说企业做到 1 亿
元以上危机产生的可能性就很大。有的房地
产公司只在一开始做火了一个楼盘，但如果
不善经营，照样倒掉。做一把生意，签一个
订单的企业不是成熟的企业，成功的企业转
型失败后会做另一种调整或转型，我们不能
因为部分的失败就否定全盘。
_今日电子 2003(10)
(9)
独立的开关模式锂离子电池充电器
LTC4002 具有 500kHz 开关频率的高校电
流模式 PWM 控制器，输入电压 4.7-24V,
无需输入瞬变保护，使 4.2V 锂电池可从
5V 变压器持续充电，可驱动一个外部 P
沟道 MOSFET，以最高 87%的效率提供
2A 充电电流，一个内部比较器检测充电
结束电流，而集成的定时器设定总充电时
间，3 小时后终止充电，自动进入休眠模
式，使电池耗用电流降至 10 微安。当电
池电压降至 4.05v 以下时，这种集成电路
还能自动开始充电，工作温度为－40-85
度，采用 3x3 毫米 DFN 和 8 引线 SO 封装。
(10)
支持 8 声道的高阶音频转换芯片 ALC850
支 持 最 新 的 AC’97Rev2.3 规 格 ， 包 括
Jack-sensing,PCBEEP
Generator
与
Interrupt capability 等功能特色，提供 3 组
（Line-out,mic-in,line-in）UAJa(Universal
audio jacka)功能，并支持 S/PDIF 接口，可
是计算机系统外接 DVD 等多媒体视听设
备，采用 48 脚 LQFP 封装。
(11)
该系统芯片支持所有模拟和数字电视标
准，画面改进特性，以及多格式音频、视
频解码和绘制等先进特性，并提供应用程
序接口（API）
。
(12)
18 位串联、解串器 DS92LV18 采用低电压
差分信号传输（LVDS）技术，能以现有
的系统数据总线时钟频率将额外的信息
与数据串联一起，可支持各自独立的传送
及接收通道，允许上游及下游数据分别以
不同速率传送，发送器，接收器空闲或停
用时，可以将电源关闭，可支持线路及局
域环回测试模式，具有即插即用模式，
带宽 15-66MHz，有效载荷 0.27-1.188Gbps，
采用 80 脚 PQFP 封装.
(13)
去年 3 月北京市高新技术成果转化服务中心
正式成立，有 318 项被认定为高新成果转化
项目，今年市财政拨款近亿元对其中 209 家
在孵企业，两家科技中介和 5 家风险投资提
供专项资金支持 2965.5 万元。截止到目前我
市共认定高新技术成果转化项目 424 项，通
过省部级的成果鉴定项目占 25%，取得国家
专利及获得软件著作权登记的项目占 52%,总
投资 118 亿元。
(14)
德国 11 月 14 日开始关闭了北部港口城市汉堡
附近的施塔德核电站，此举意味着其正式开
始实施放弃发展核能源战略。该占是德国目
前运行的 19 座核电站中第一座被关闭的核设
施，停运后，要首先拆卸废旧核燃料棒，并
把它们运到法国处理，因为德国目前还没有
处理核燃料棒的设备。
(15)
社科院财政与贸易经济研究所日前公布《中
国：启动新一轮税制改革》
，报告认为，形成
于 10 年前的中国现行税制今天已同其赖以生
存的经济社会环境之间出现了诸多摩擦，内
外资企业所得税统一后，税率的确定应当设
计在 24%左右。报告还认为，对于企业所得
税的改革中，税法统一，实行统一税率是毫
无疑问的，问题在于税率多少才合适，考虑
到当前内外资资的实际税收负担水平，兼顾
与世界大多数国家税率保持大致平衡，统一
后的内外资企业所得税税率应当在 24%左右，
小企业还要更低一些。为了照顾外商实际利
益和平稳过渡，税法合并不排除分步并轨或
保留一定优惠待遇的实施方式。
(16)
北京生物工程与医药产业基地概念性总体规
划设计方案征集活动在大兴揭晓，来自西班
牙，美国和中国的设计联合体设计的 3 个方
案被评为最优，北京生物工程与医药产业基
地位于北京大兴区，是北京现代制造业四大
产业基地之一，规划总面积为 28 平方公里。
(17)
一直以通讯设备制造为主的华为公司，在
2003 年北京国际通信展期间，隆重推出小
灵通产品，并公布了其在手机方面的战略
布局。首次推出的产品有三款，并在 100
多个国内地市铺开营销网络，销售数量超
过 10 万，其目标是年底销售超过 30 万，
明年全年突破 300 万。进入一个市场容易
但站住很难，作为老牌设备商，华为在经
营终端产品上是否有渠道和经验？过去
UT 斯达康和中兴都是在销售小灵通设备
的同时销售手机，来自信息产业部电信研
究院的一份资料表明，小灵通目前的网络
建设情况已经遍布全国绝大部分地区，但
是由于网络使用率低下，在 40%,一些地区
正在考虑压缩在小灵通的投资建设，因为
无论中国电信还是中国网通，近年内新建
和扩建网络几无可能。与此同时华为还要
面临一个问题是，现在进军小灵通，不仅
要撼动 UT 斯达康和中兴这样的强敌，而
且还要对付身边的对手。就在华为宣布冲
向手机市场之际，以生产电话著称并在纳
斯达克上市的侨兴集团，也在日前宣布推
出第一款小灵通手机。两家在各自领域都
占据绝对主导地位的通讯巨头，同时宣布
进军小灵通，已让人看到小灵通市场为来
的激烈竞争。
(18)
11 月 15 日 A,B 股前 5 名统计结果，请参
见下页图表。
(19)
期货数据请您参见下页图表。
(20)
开放式基金净值数据请您参见下页图表。
(21)
国债收益率统计请您参见下页图表。
图书信息中心负责人：李树深
编
辑：张谊娃
工作信箱：
gladyouasked@red.semi.ac.cn
2003.3.15
沪深市 A 股涨幅前 5 名
股票代码
股票名称
600691
林凤控股
600771
东盛科技
600748
上实发展
600129
太极集团
600073
上海梅林
000667
名流置业
000605
四环药业
000698
沈阳化工
000096
广聚能源
000901
航天科技
收盘
5.70
6.8
5.61
17.16
6.75
5.58
8.34
5.16
10.75
6.92
涨幅%
10.04
10.03
10.00
10.00
9.93
10.06
10.03
6.39
6.23
5.97
换手率%
0.99
2.72
2.32
0.49
7.16
2.40
5.71
2.31
2.13
7.66
沪深市 A 股跌幅前 5 名统计
股票代码
股票名称
收盘
600794
8.77
保税科技
6000090
5.81
啤酒花
600659
5.07
神龙发展
600843
7.68
上工股份
600796
8.88
钱江生化
000558
6.04
莱茵置业
000525
4.50
红太阳
000826
8.65
*ST 资源
000877
9.63
天山股份
000937
8.8
金牛能源
跌幅%
-9.96
-9.92
-4.16
-4.12
-3.90
-9.99
-5.86
-5.05
-4.94
-4.35
换手率%
0.01
0.03
8.07
1.95
1.59
0.79
4.66
0.53
2.74
0.81
沪深市 B 股涨幅前 5 名统计
股票代码
股票名称
收盘
9000932
陆家 B 股 0.738
900921
大盈 B 股 0.382
900911
金桥 B 股 0.576
900906
中纺 B 股 0.418
900952
ST 锦港 B 0.485
200025
ST 特力 B 3.70
200028
3.80
一致 B
200057
ST 大洋 B 1.86
200020
3.42
深华发 B
200019
4.08
深深宝 B
涨幅%
1.65
1.60
1.41
0.97
0.83
2.49
1.88
1.64
0.88
0.74
换手率%
0.12
0.14
0.18
0.12
0.19
4.86
0.36
0.24
0.18
0.18
沪深市 B 股跌幅前 5 名统计
股票代码
股票名称
收盘
900933
华新 B 股 0.545
900924
上工 B 股 0.503
900935
阳晨 B 股 0.597
900949
东电 B 股 0.757
900914
新锦 B 股 0.457
200770
4.35
武锅 B
200581
7.75
苏威孚 B
200022
11.22
深赤湾 B
200037
8.23
深南电 B
200160
4.34
帝贤 B
跌幅%
-1.80
-1.57
-1.49
-1.30
-1.08
-4.61
-4.32
-4.10
-2.83
-2.69
换手率%
0.15
0.73
0.17
0.44
0.10
1.34
0.40
0.45
1.01
0.94
5 月 30 日 9 月 27 日 10 月 11 日 11 月 15 日期市数据主力合约报价表
5 月 30 日
开盘
最高
最低
收盘
涨跌(元)
成交量
持仓量
黄豆 307
黄豆 309
2707
2672
2715
2672
2681
2609
2681
2629
-82
-60
163068
418072
191754
488284
黄豆 311
2460
2462
2420
2454
-15
556612
357144
黄豆 401
2410
2425
2391
2418
-23
54324
41976
豆粕 308
2066
2067
2048
2059
-12
47266
85534
强麦 309
1646
1647
1601
1623
-26
106084
126220
强麦 311
1666
1634
1605
1617
-18
10850
41408
硬麦 309
1490
1490
1467
1470
-20
72986
191510
铜 309
铝 309
天胶 307
17280
14670
11500
17360
14690
11520
17220
14660
11120
17260
14690
11120
-160
-20
-345
15368
4768
51630
89474
18540
69682
天胶 308
11460
11495
10985
10985
-340
167146
106834
9 月 27 日
开盘
最高
最低
收盘
涨跌(元)
成交量
持仓量
黄豆 0311
黄豆 0401
2670
2751
2685
2778
2660
2749
2682
2770
32
40
20926
186362
114512
411316
黄豆 0405
2776
2790
2769
2783
26
312286
325944
豆粕 0311
2441
2467
2420
2438
26
8340
40312
豆粕 0401
2349
2350
2323
2341
21
83338
99030
强麦 0401
1596
1606
1583
1586
-7
116316
110814
硬麦 0401
1342
1348
1328
1333
-4
58358
116402
铜 0401
18460
18550
18460
18550
130
10856
88596
铝 0401
天胶 0403
10 月 11 日
14630
14520
开盘
14640
14665
最高
14630
14470
最低
14640
14665
收盘
10
185
涨跌(元)
1196
76418
成交量
13050
62254
持仓量
黄豆 0311
黄豆 0401
黄豆 0405
豆粕 0311
豆粕 0401
强麦 0401
硬麦 0401
铜 0401
2851
2896
2977
2619
2615
1631
1373
18810
2878
2945
3026
2679
2620
1642
1401
18870
2834
2895
2977
2619
2599
1622
1371
18760
2875
2930
3025
2678
2620
1637
1397
18850
35
49
74
102
76
3
20
0
33884
265796
406504
15792
54038
80928
93312
6192
74928
272008
280426
7388
81516
119442
128630
72138
铝 0401
天胶 0403
11 月 15 日
14660
15140
开盘
14660
15185
最高
14360
14655
最低
14440
14940
收盘
-210
-170
涨跌(元)
5378
148916
成交量
16114
53458
持仓量
黄豆 0405
黄豆 0409
豆粕 0403
豆粕 0405
强麦 0405
硬麦 0405
铜 0405
铝 0405
天胶 0405
3305
3280
2768
2762
1911
1775
21480
15700
14545
3312
3297
2770
2763
1917
1778
21590
15770
14750
3282
3252
2690
2710
1882
1751
21400
15680
14485
3291
3267
2710
2736
1899
1766
21480
15690
14535
14
6
-27
-1
-11
4
-300
-100
0
421042
37814
36014
72924
47866
205716
31816
4036
128566
340858
64234
47514
57812
62908
174774
138620
24138
50966
10 月 29 日 11 月 15 日开放式基金净值
10.29 开放式基金
单位净值 累计净值
名称
1.130
1.221
博时价值增长
1.0233
1.0633
南方稳健
1.011
1.011
嘉实增长
1.0076
1.0076
招商安泰股票
1.0070
1.0820
长盛成长价值
1.0043
1.0643
嘉实成长收益
1.003
易方达平稳增长
1.0029
1.0029
宝康债券
1.001
1.013
华夏债券
0.9998
0.9998
宝康灵活配置
0.999
华夏回报
0.9987
1.0587
融通新蓝筹
0.9974
宝盈鸿利
0.9970
0.9970
宝康消费品
0.9926
0.9926
南方避险
0.9926
0.9926
招商安泰平衡
0.9908
1.0228
南方宝元
0.9899
0.9899
大成债券
0.988
0.988
嘉实稳健
0.9867
湘财合丰周期
0.9850
0.9850
招商安泰债券
0.981
0.981
嘉实债券
0.9796
1.0696
大成价值成长
0.9791
0.9791
中融融华
0.9744
富国动态平衡
0.967
1.007
华安创新
0.963
1.013
华安 180
0.9593
湘财合丰稳定
0.9450
0.9450
天同 180 指数
0.945
0.945
国泰金鹰
0.941
1.001
华夏成长
0.9362
湘财合丰成长
0.9119
鹏华行业
11.15 开放式基金
名称
博时价值增长
南方稳健
嘉实成长受益
易方达平稳增长
招商股票
华夏债券
宝康债券
华夏回报
长盛成长价值
融通蓝筹成长
融通新蓝筹
嘉实增长
南方避险
宝康灵活配置
湘财合丰周期
南方宝元
招商平衡
宝康消费品
招商债券
大成债券
嘉实稳健
融通债券
嘉实债券
中融融华
银华优势企业
富国动态平衡
大成价值增长
华安创新
博时裕富
国泰金鹰
湘财合稳定
华安 180
华夏成长
天同 180 指数
单位净值
累计净值
1.123
1.0276
1.0162
1.009
1.0073
1.004
1.0040
1.004
1.0020
1.002
0.9990
0.997
0.9952
0.9948
0.9948
0.9946
0.9930
0.9900
0.9896
0.9890
0.989
0.988
0.985
0.9821
0.9800
0.9782
0.9765
0.975
0.974
0.963
0.9562
0.952
0.931
0.9300
1.214
1.0676
1.0762
1.049
1.0073
1.016
1.0040
1.004
1.0770
1.002
1.0590
0.997
0.9952
0.9948
-1.0266
0.9930
0.9900
0.9896
0.9890
0.989
0.988
0.985
0.9821
1.0500
-1.0665
1.015
0.974
0.963
-1.002
0.991
0.9300
湘财合丰成长
鹏华行业
10 月 11 日 29 日 11 月 15 日国债收益率
10.11
交易
品种
收益率
净价
代码
（％）
000696
124.20
2.3792
96 国债(6)
000896
100.36
2.3867
96 国债(8)
009704
125.20
2.8627
97 国债(4)
009905
101.47
2.8707
99 国债(5)
009908
99.55
3.3843
99 国债(8)
010004
98.23
20 国债(4)
010010
97.36
20 国债(10)
010103
100.30
3.1948
21 国债(3)
010107
107.31
3.6957
21 国债(7)
010110
3.5726
21 国债(10) 95.75
010112
96.47
3.5614
21 国债(12)
010115
3.3049
21 国债(15) 98.56
010203
92.13
3.6288
02 国债(3)
010210
3.3562
02 国债(10) 94.94
010213
3.1528
02 国债(13) 93.80
020314
3.1717
02 国债(14) 98.05
010215
3.2489
02 国债(15) 98.24
010301
96.19
3.3327
03 国债(1)
010303
94.86
3.7758
03 国债(3)
010307
95.98
3.3241
03 国债(7)
010308
95.23
3.5991
03 国债(8)
10.29
净价
123.99
100.04
125.08
100.4
98.35
97.39
97.40
99.78
102.27
93.39
94.08
97.75
90.19
93.30
91.51
97.4
97.8
95.97
91.00
95.39
92.51
收益率
（％）
2.3031
2.5523
2.8182
2.8848
3.6144
3.3203
4.0787
3.9381
3.9260
3.4844
3.9217
3.6931
3.3700
3.3571
3.3333
3.3779
4.0739
3.4293
3.9490
0.9103
0.9062
11.15
净价
123.75
-------124.99
101.46
98.50
100.23
99.34
100.20
101.77
94.09
94.67
98.18
90.60
93.8
92.40
98.43
97.75
96.00
91.14
95.93
92.88
---
收益率
（％）
2.2429
2.7696
2.8630
3.5871
3.2178
4.1178
3.8338
3.8396
3.3942
3.8670
3.6008
3.2873
3.0784
3.3458
3.3774
4.0638
3.3409
3.9043