DMJ70H1D3SI3
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
ADVANCED INFORMATION
Product Summary
Features and Benefits
BVDSS
RDS(on) max
ID
TC = +25°C

Low On-Resistance

High BVDss rating for power application
700V
1.3Ω @ VGS = 10V
4.6A

Low Input Capacitance


Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it

Case: TO251

Case Material: Molded Plastic, “Green” Molding Compound.
ideal for high-efficiency power management applications.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Motor Control


Terminal Connections: See Diagram
Backlighting


AC-DC Converters
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3

Weight: 0.33 grams (Approximate)
TO251
TO251
Top View
TO251
Bottom View
(MIPAK)
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Part Number
DMJ70H1D3SI3
Notes:
Case
TO251
Packaging
75pieces / tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
TO251
7N70SI
YYWW
DMJ70H1D3SI3
Document number: DS38121 Rev. 1 - 2
= Manufacturer’s Marking
7N70SI = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Digit of Year (ex: 15 = 2015)
WW or WW = Week Code (01 to 53)
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DMJ70H1D3SI3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = +25°C
TC = +100°C
Continuous Drain Current (Note 5) VGS = 10V
NEW PRODUCT
ADVANCED INFORMATION
Value
700
Units
V
±30
V
4.6
2.9
A
IS
IDM
3.0
A
5.4
A
VDSS
VGSS
ID
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
L = 60mH
IAS
1.1
A
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt (Note 7)
L = 60mH
EAS
dv/dt
40
5
mJ
V/ns
Symbol
Units
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Value
41
16
79
Thermal Resistance, Junction to Case (Note 5)
RθJC
3.0
TJ, TSTG
-55 to +150
TC = +25°C
Total Power Dissipation (Note 5)
PD
TC = +100°C
Operating and Storage Temperature Range
Electrical Characteristics
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
700

VGS = 0V, ID = 250µA
IDSS



1
V
Zero Gate Voltage Drain Current
µA
VDS = 700V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSS


100
nA
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS(th)
2
RDS(ON)
VSD

2.9
1.0
4
1.3
V
Ω

0.9
1.3
V

351
66

Output Capacitance
Ciss
Coss

pF
Reverse Transfer Capacitance
Crss
1.1
Gate Resistance
RG


3.5


VDS = 50V, f = 1MHz,
VGS = 0V
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Gate-Source Charge
Qg

13.9

Qgs

1.9

nC

8.5
8.5

Turn-On Delay Time
Qgd
tD(on)
VDD = 560V, ID = 5A,
VGS = 10V
Turn-On Rise Time
Turn-Off Delay Time
ns
VDD = 350V, VGS = 10V,
RG = 4.7Ω, ID = 2.5A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Gate-Drain Charge

tr


11.6


tD(off)

24.5

tf

10


212
251

Body Diode Reverse Recovery Time (TJ = +150°C)
Body Diode Reverse Recovery Charge
trr
trr

ns
Qrr
1.8
Qrr


µC
Body Diode Reverse Recovery Charge (TJ = +150°C)


Turn-Off Fall Time
Body Diode Reverse Recovery Time
Notes:

2.3
VGS = 10V, ID = 2.5A
VGS = 0V, IS = 5A
ns
IS = 5A, dI/dt = 100A/μs
µC
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMJ70H1D3SI3
Document number: DS38121 Rev. 1 - 2
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November 2015
© Diodes Incorporated
DMJ70H1D3SI3
6.0
5
VGS = 25V
VDS = 20V
VGS = 15V
4
4.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 5.5V
VGS = 10V
VGS = 8.0V
VGS = 5.0V
VGS = 6.0V
3.0
VGS = 4.5V
2.0
3
TA = 150°C
2
TA = 125°C
TA = 25°C
TA = 85°C
1
1.0
TA = -55°C
VGS = 4.0V
VGS = 3.5V
0.0
0
1
2
3
4
5
6
7
8
9
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
1.4
VGS = 10V
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
5
5
0
1
2
3
4
5
6
7
8
9
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
10
5
4
3
ID = 2.5A
2
1
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
5
VGS = 10V
4.5
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.8
1.2
0
10
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
NEW PRODUCT
ADVANCED INFORMATION
5.0
T A = 150°C
4
TA = 125°C
3
TA = 85°C
2
T A = 25°C
1
TA = -55°C
4
3.5
VGS = 10V
ID = 5A
3
2.5
2
1.5
VGS = 5.0V
ID = 1A
1
0.5
0
0
1
2
3
4
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMJ70H1D3SI3
Document number: DS38121 Rev. 1 - 2
5
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0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
November 2015
© Diodes Incorporated
DMJ70H1D3SI3
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
5
4
VGS = 10V
ID = 5A
3
2
VGS = 5.0V
ID = 1A
1
4.5
4
3.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75 100 125 150
T J, JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
5
10000
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
ID = 250µA
2.5
0
-50
4
TA = 150°C
3
TA = 125°C
2
T A = 25°C
TA = 85°C
TA = -55°C
1
0
ID = 1mA
3
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
0
1000
C iss
C oss
100
10
Crss
f = 1MHz
1
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
10
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
40
PW = 1µs
RDS(on)
Limited
PW = 10µs
8
-ID , DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
ADVANCED INFORMATION
5
VDS = 560V
ID = 5A
6
4
PW = 1s
1
PW = 100s
PW = 10ms
PW = 1ms
PW = 100µs
0.1
T J(max) = 150°C
T A = 25°C
2
VGS = 10V
Single Pulse
DUT on infinite heatsink
0
0
3
6
9
12
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMJ70H1D3SI3
Document number: DS38121 Rev. 1 - 2
15
0.01
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1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
November 2015
© Diodes Incorporated
DMJ70H1D3SI3
D = 0.9
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
ADVANCED INFORMATION
1
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJC(t) = r(t) * RJC
RJC = 3.3°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
1
10
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E
L4
b3
15°
L3
D1
L5
Ø1.2x0.1
D
TOP E-MARK
01
E1
b2
L1
e
b
02
A
k
DMJ70H1D3SI3
Document number: DS38121 Rev. 1 - 2
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TO251 (Type TH2)
Dim
Min Max Typ
A
2.20 2.40 2.30
A2
0.97 1.17 1.07
b
0.68 0.90 0.78
b2
0.76 0.95 0.84
b3
5.20 5.50 5.33
c
0.43 0.63 0.53
D
5.98 6.22 6.10
D1
5.30 REF
e
2.286 BSC
E
6.40 6.80 6.60
E1
4.63 5.03 4.83
H
10.42 10.82 10.62
k
0.40REF
L1
3.30 3.70 3.50
L3
0.88 1.28 1.02
L4
0.75 REF
L5
1.65 1.95 1.80
θ1
5°
9°
7°
θ2
5°
9°
7°
All Dimensions in mm
November 2015
© Diodes Incorporated
DMJ70H1D3SI3
IMPORTANT NOTICE
NEW PRODUCT
ADVANCED INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMJ70H1D3SI3
Document number: DS38121 Rev. 1 - 2
6 of 6
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November 2015
© Diodes Incorporated