VN5E050MJ-E
Single-channel high-side driver with analog current sense
for automotive applications
Features
Max supply voltage
VCC
41 V
Operating voltage range
VCC
4.5 V to 28V
Max on-state resistance
RON
50 mΩ
Current limitation (typ)
ILIMH
27 A
Off-state supply current
IS
2 µA(1)
■
■
General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Overload and short to ground (power
limitation) indication
– Thermal shutdown indication
Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Overtemperature shutdown with auto
restart (thermal shutdown)
– Reverse battery protected (see Figure 29)
September 2013
– Electrostatic discharge protection
Application
1. Typical value with all loads connected.
■
PowerSSO-12
■
All types of resistive, inductive and capacitive
loads
■
Suitable as LED driver
Description
The VN5E050MJ-E is a single channel high-side
driver manufactured in the ST proprietary
VIPower™ M0-5 technology and housed in the
tiny PowerSSO-12 package. The VN5E050MJ-E
is designed to drive 12 V automotive grounded
loads delivering protection, diagnostics and easy
3 V and 5 V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
Enhanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation and overtemperature
indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
Doc ID 16611 Rev 2
1/35
www.st.com
1
Contents
VN5E050MJ-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.5
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.1
4
3.1.1
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 23
3.1.2
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . . 24
3.2
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.3
MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.4
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.5
Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 26
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
4.1
5
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 23
PowerSSO-12 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.1
ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.2
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.3
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2/35
Doc ID 16611 Rev 2
VN5E050MJ-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC= 13V; Tj= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Current sense (8V<VCC<18V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PowerSSO-12 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Doc ID 16611 Rev 2
3/35
List of figures
VN5E050MJ-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
4/35
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Delay response time between rising edge of output current and rising edge of current sense
(CS enabled). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
IOUT/ISENSE vs. IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Maximum current sense ratio drift vs. load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Overload or Short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Intermittent Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
TJ evolution in Overload or Short to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input clamp level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
On-state resistance vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
On-state resistance vs. VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
ILIMH Vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
PowerSSO-12 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Rthj-amb Vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . 27
PowerSSO-12 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . 28
Thermal fitting model of a single channel HSD in PowerSSO-12 . . . . . . . . . . . . . . . . . . . 28
PowerSSO-12 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
PowerSSO-12 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
PowerSSO-12 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Doc ID 16611 Rev 2
VN5E050MJ-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
VCC
Signal Clamp
Undervoltage
IN
Control & Diagnostic
Power
Clamp
DRIVER
VON
Limitation
Over
temp.
Current
Limitation
CS_
DIS
VSENSEH
CS
Current
Sense
OUT
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
LOGIC
GND
Table 1.
Pin function
Name
Function
VCC
Battery connection.
OUT
Power output.
GND
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
IN
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
CS
Analog current sense pin, delivers a current proportional to the load current.
CS_DIS
Active high CMOS compatible pin, to disable the current sense pin.
Doc ID 16611 Rev 2
5/35
Block diagram and pin description
Figure 2.
VN5E050MJ-E
Configuration diagram (top view)
TAB = Vcc
N.C.
1
12
N.C.
GND
2
11
OUT
IN
3
10
OUT
CS
4
9
OUT
CS_DIS
5
8
OUT
6
7
N.C.
N.C.
Table 2.
6/35
Suggested connections for unused and not connected pins
Connection /
pin
Current sense
N.C.
Output
Input
CS_DIS
Floating
Not allowed
X
X
X
X
To ground
Through 1 KΩ
resistor
X
Through 22 KΩ
resistor
Through 10 KΩ
resistor
Through 10 KΩ
resistor
Doc ID 16611 Rev 2
VN5E050MJ-E
2
Electrical specifications
Electrical specifications
Figure 3.
Current and voltage conventions
IS
VCC
VCC
IOUT
ICSD
OUT
CS_DIS
VCSD
VF
VOUT
ISENSE
IIN
IN
CS
VIN
VSENSE
GND
IGND
Note:
VF = VOUT - VCC during reverse battery condition.
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
DC supply voltage
41
V
-VCC
Reverse DC supply voltage
0.3
V
- IGND
DC reverse ground pin current
200
mA
Internally limited
A
20
A
DC input current
-1 to 10
mA
DC current sense disable input current
-1 to 10
mA
200
mA
VCC - 41 to
+VCC
V
104
mJ
IOUT
- IOUT
IIN
ICSD
DC output current
Reverse DC output current
-ICSENSE DC reverse CS pin current
VCSENSE Current sense maximum voltage
EMAX
Maximum switching energy (single pulse)
(L= 3mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(Typ.))
Doc ID 16611 Rev 2
7/35
Electrical specifications
Table 3.
Absolute maximum ratings (continued)
Symbol
Value
Unit
VESD
Electrostatic discharge
(Human Body Model: R=1.5KΩ; C=100pF)
– INPUT
– CURRENT SENSE
– CS_DIS
– OUTPUT
– VCC
4000
2000
4000
5000
5000
V
V
V
V
V
VESD
Charge device model (CDM-AEC-Q100-011)
750
V
Junction operating temperature
-40 to 150
°C
Storage temperature
-55 to 150
°C
Max. value
Unit
2.7
°C/W
See Figure 33
°C/W
Tj
Tstg
2.2
VN5E050MJ-E
Parameter
Thermal data
Table 4.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case (with one channel ON)
Rthj-amb Thermal resistance junction-ambient
8/35
Doc ID 16611 Rev 2
VN5E050MJ-E
2.3
Electrical specifications
Electrical characteristics
Values specified in this section are for 8V <VCC< 28V; -40°C< Tj <150°C, unless otherwise
stated.
Table 5.
Power section
Symbol
Parameter
VCC
Operating supply
voltage
VUSD
Test conditions
Min. Typ. Max. Unit
13
28
V
Undervoltage shutdown
3.5
4.5
V
VUSDhyst
Undervoltage
shutdown hysteresis
0.5
RON
On-state resistance
IOUT= 2A; Tj= 25°C
IOUT= 2A; Tj= 150°C
IOUT= 2A; VCC= 5V; Tj= 25°C
Vclamp
Clamp voltage
IS= 20 mA
IS
Supply current
Off-state; VCC=13V; Tj=25°C;
VIN=VOUT=VSENSE=VCSD=0V
On-state; VCC=13V; VIN=5V; IOUT=0A
Off-state output current
VIN=VOUT=0V; VCC=13V; Tj=25°C
VIN=VOUT=0V; VCC=13V; Tj=125°C
Output - VCC diode
voltage
-IOUT= 2A; Tj= 150°C
IL(off1)
VF
4.5
41
0
0
V
50
100
65
mΩ
mΩ
mΩ
46
52
V
2(1)
1.5
5(1)
3
µA
mA
0.01
3
5
µA
0.7
V
1. PowerMOS leakage included.
Table 6.
Symbol
Switching (VCC= 13V; Tj= 25°C)
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
Turn-on delay time
RL= 6.5Ω (see Figure 5.)
-
20
-
µs
td(off)
Turn-off delay time
RL= 6.5Ω (see Figure 5.)
-
40
-
µs
(dVOUT/dt)on Turn-on voltage slope RL= 6.5Ω
-
See Figure 23
-
V/µs
(dVOUT/dt)off Turn-off voltage slope RL= 6.5Ω
-
See Figure 25
-
V/µs
WON
Switching energy
losses during ton
RL= 6.5Ω (see Figure 5.)
-
0.20
-
mJ
WOFF
Switching energy
losses during toff
RL= 6.5Ω (see Figure 5.)
-
0.3
-
mJ
Doc ID 16611 Rev 2
9/35
Electrical specifications
Table 7.
Symbol
VN5E050MJ-E
Logic inputs
Parameter
Test conditions
VIL
Input low level voltage
IIL
Low level input current
VIH
Input high level voltage
IIH
High level input current
VI(hyst)
Input hysteresis voltage
VICL
VIN=0.9V
ICSDL
Low level CS_DIS current
VCSDH
CS_DIS high level voltage
ICSDH
High level CS_DIS current
VCSD=0.9V
Table 8.
Symbol
CS_DIS clamp voltage
ICSD=1mA
ICSD=-1mA
Parameter
Test conditions
VCC= 13V
5V < VCC < 28V
IlimL
Short circuit current
during thermal cycling
VCC= 13V; TR<Tj<TTSD
TTSD
Shutdown temperature
µA
2.1
V
10
7
V
V
0.9
V
-0.7
1
µA
2.1
V
10
µA
V
5.5
7
-0.7
V
V
Min.
Typ.
Max.
Unit
19
27
38
38
A
A
7
Reset temperature
TRS
Thermal reset of status
175
A
200
TRS + 1 TRS + 5
135
Thermal hysteresis
(TTSD-TR)
Turn-off output voltage
clamp
IOUT= 2A; VIN=0; L= 6mH
Output voltage drop
limitation
IOUT=0.1A;
Tj=-40°C to 150°C
(see Figure 6)
Doc ID 16611 Rev 2
°C
°C
°C
7
°C
VCC-41 VCC-46 VCC-52
V
25
mV
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
10/35
µA
V
5.5
150
TR
VON
V
Protections and diagnostics (1)
DC short circuit current
VDEMAG
0.9
0.25
IlimH
THYST
Unit
1
VCSD=2.1V
VCSD(hyst) CS_DIS hysteresis voltage
VCSCL
Max.
0.25
IIN=1mA
IIN=-1mA
CS_DIS low level voltage
Typ.
VIN=2.1V
Input clamp voltage
VCSDL
Min.
VN5E050MJ-E
Electrical specifications
Table 9.
Symbol
K0
K1
dK1/K1(1)
K2
dK2/K2(1)
K3
dK3/K3(1)
ISENSE0
IOL
Current sense (8V<VCC<18V)
Parameter
Test conditions
Min. Typ. Max. Unit
IOUT/ISENSE
IOUT=0.05A; VSENSE=0.5V;VCSD=0V;
Tj= -40°C to 150°C
1170 2000 3090
IOUT/ISENSE
IOUT= 1A; VSENSE=4 V; VCSD=0V
Tj= -40°C to 150°C
Tj=25°C to 150°C
1575 2000 2750
1575 2000 2465
Current sense
ratio drift
IOUT= 1A; VSENSE= 4 V; VCSD=0V;
TJ= -40 °C to 150 °C
IOUT/ISENSE
IOUT = 2A; VSENSE= 4V; VCSD=0V;
Tj= -40°C to 150°C
Tj=25°C to 150°C
Current sense
ratio drift
IOUT= 2A; VSENSE= 4V; VCSD=0V;
TJ=-40 °C to 150 °C
IOUT/ISENSE
IOUT= 4A; VSENSE=4V; VCSD=0V;
Tj= -40°C to 150°C
Tj= 25°C to 150°C
Current sense
ratio drift
IOUT= 4A; VSENSE= 4 V; VCSD=0V;
TJ= -40 °C to 150 °C
Analog sense
leakage current
Open load onstate current
detection
threshold
-10
10
%
1765 2000 2315
1765 2000 2155
-7
7
%
1840 2000 2135
1840 2000 2080
-4
4
%
IOUT=0A; VSENSE=0V;
VCSD=5V; VIN=0V; Tj=-40°C to 150°C
VCSD=0V; VIN=5V; Tj=-40°C to 150°C
0
0
1
2
µA
µA
IOUT=2A; VSENSE=0V;
VCSD=5V; VIN=5V; Tj=-40°C to 150°C
0
1
µA
4
20
mA
VIN = 5V, 8V<VCC<18V
ISENSE = 5 µA
VSENSE
Max analog sense
IOUT = 4A; VCSD = 0V
output voltage
VSENSEH
Analog sense
output voltage in
fault condition(2)
VCC = 13V; RSENSE = 3.9 KΩ
8
V
ISENSEH
Analog sense
output current in
fault condition(2)
VCC = 13V; VSENSE = 5V
9
mA
tDSENSE1H
Delay response
time from falling
edge of CS_DIS
pin
VSENSE<4V, 0.5A<Iout<4A
ISENSE = 90% of ISENSE max
(see Figure 4.)
50
100
µs
tDSENSE1L
Delay response
time from rising
edge of CS_DIS
pin
VSENSE < 4V, 0.5A<Iout<4A
ISENSE = 10% of ISENSE max
(see Figure 4.)
5
20
µs
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5
V
11/35
Electrical specifications
Table 9.
Symbol
tDSENSE2H
ΔtDSENSE2H
tDSENSE2L
VN5E050MJ-E
Current sense (8V<VCC<18V) (continued)
Parameter
Test conditions
VSENSE < 4V, 0.5A<Iout<4A
Delay response
time from rising
ISENSE = 90% of ISENSE max
edge of INPUT pin (see Figure 4.)
Delay response
time between
rising edge of
output current and
rising edge of
current sense
80
VSENSE < 4V,
ISENSE = 90% of ISENSEMAX,
IOUT = 90% of IOUTMAX
IOUTMAX = 2A (see Figure 7)
VSENSE < 4V, 0.5A<Iout<4A
Delay response
ISENSE = 10% of ISENSE max
time from falling
edge of INPUT pin (see Figure 4.)
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation and overtemperature.
12/35
Min. Typ. Max. Unit
Doc ID 16611 Rev 2
100
250
µs
40
µs
250
µs
VN5E050MJ-E
Electrical specifications
Figure 4.
Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
tDSENSE2H
Figure 5.
tDSENSE1L
tDSENSE1H
tDSENSE2L
Switching characteristics
VOUT
tWon
tWoff
90%
80%
dVOUT/dt(on)
dVOUT/dt(off)
tr
10%
tf
t
INPUT
td(on)
td(off)
t
Figure 6.
Output voltage drop limitation
Vcc-Vout
Tj=150oC
Tj=25oC
Tj=-40oC
Von
Iout
Von/Ron(T)
Doc ID 16611 Rev 2
13/35
Electrical specifications
Figure 7.
VN5E050MJ-E
Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
VIN
ΔtDSENSE2H
t
IOUT
IOUTMAX
90% IOUTMAX
t
ISENSE
ISENSEMAX
90% ISENSEMAX
t
14/35
Doc ID 16611 Rev 2
VN5E050MJ-E
Electrical specifications
Figure 8.
IOUT/ISENSE vs. IOUT
Iout / Isense
3000
2800
max Tj = -40 °C to 150 °C
2600
2400
2200
max Tj = 25 °C to 150 °C
typical value
2000
1800
1600
min Tj = 25 °C to 150 °C = min Tj = -40 °C to 150 °C
1400
1200
1
1,5
2
2,5
3
3,5
4
IOUT (A)
Figure 9.
Maximum current sense ratio drift vs. load current
dk/k(%)
20
15
10
5
0
-5
-10
-15
-20
1
Note:
2
IOUT (A)
3
4
Parameter guaranteed by design; it is not tested.
Doc ID 16611 Rev 2
15/35
Electrical specifications
Table 10.
VN5E050MJ-E
Truth table
Input
Output
Sense (VCSD = 0V)(1)
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
VSENSEH
Undervoltage
L
H
L
L
0
0
H
X
(no power limitation)
Cycling
(power limitation)
Nominal
Conditions
Overload
H
VSENSEH
Short circuit to GND
(power limitation)
L
H
L
L
0
VSENSEH
Negative output voltage
clamp
L
L
0
1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents
and external circuit.
16/35
Doc ID 16611 Rev 2
VN5E050MJ-E
Electrical specifications
Table 11.
ISO 7637-2:
2004(E)
Test pulse
Electrical transient requirements (part 1)
Test levels(1)
III
IV
1
-75V
-100V
2a
+37V
3a
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
Impedance
Min.
Max.
5000 pulses
0.5s
5s
2 ms, 10Ω
+50V
5000 pulses
0.2s
5s
50µs, 2Ω
-100V
-150V
1h
90ms
100ms
0.1µs, 50Ω
3b
+75V
+100V
1h
90ms
100ms
0.1µs, 50Ω
4
-6V
-7V
1 pulse
100ms, 0.01Ω
+65V
+87V
1 pulse
400ms, 2Ω
(2)
5b
1. The above test levels must be considered referred to VCC = 13.5 V except for pulse 5b.
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 12.
Electrical transient requirements (part 2)
Test level results(1)
ISO 7637-2:
2004(E)
Test pulse
III
IV
1
C
C
2a
C
C
3a
C
C
3b
C
C
4
C
C
5b(2)
C
C
1. The above test levels must be considered referred to VCC = 13.5 V except for pulse 5b
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 13.
Electrical transient requirements (part 3)
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 16611 Rev 2
17/35
Electrical specifications
2.4
VN5E050MJ-E
Waveforms
Figure 10. Normal operation
Normal operation
INPUT
Nominal load
Nominal load
IOUT
VSENSE
VCS_DIS
Figure 11.
Overload or Short to GND
Overload or Short to GND
INPUT
ILimH >
Power Limitation
Thermal cycling
ILimL >
IOUT
VSENSE
VCS_DIS
18/35
Doc ID 16611 Rev 2
VN5E050MJ-E
Electrical specifications
Figure 12. Intermittent Overload
Intermittent Overload
INPUT
Overload
ILimH >
ILimL >
Nominal load
IOUT
VSENSEH >
VSENSE
VCS_DIS
Figure 13. TJ evolution in Overload or Short to GND
TJ evolution in
Overload or Short to GND
INPUT
Self-limitation of fast thermal transients
TTSD
THYST
TR
TJ_START
TJ
ILimH >
Power Limitation
< ILimL
IOUT
Doc ID 16611 Rev 2
19/35
Electrical specifications
2.5
VN5E050MJ-E
Electrical characteristics curves
Figure 14. Off-state output current
Figure 15. High level input current
Iih (µA)
Iloff (nA)
5
700
4,5
600
Vin=2.1V
Off State
Vcc=13V
Vin=Vout=0V
500
4
3,5
3
400
2,5
300
2
1,5
200
1
100
0,5
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
50
75
100
125
150
175
100
125
150
175
150
175
Tc (°C)
Figure 16. Input clamp level
Figure 17. Input low level
Vicl (V)
Vil (V)
7
2
6,8
1,8
lin=1mA
6,6
1,6
6,4
1,4
6,2
1,2
6
1
5,8
0,8
5,6
0,6
5,4
0,4
5,2
0,2
5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
50
75
Tc (°C)
Figure 18. Input high level
Figure 19. Input hysteresis voltage
Vih (V)
Vihyst (V)
4
1
0,9
3,5
0,8
3
0,7
2,5
0,6
2
0,5
0,4
1,5
0,3
1
0,2
0,5
0,1
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
Tc (°C)
20/35
-25
0
25
50
75
Tc (°C)
Doc ID 16611 Rev 2
100
125
VN5E050MJ-E
Electrical specifications
Figure 20. On-state resistance vs. Tcase
Figure 21. On-state resistance vs. VCC
Ron (mOhm)
Ron (mOhm)
300
100
Iout= 2A
Vcc=13V
250
Tc=150°C
80
Tc=125°C
200
60
150
Tc=25°C
40
100
Tc=-40°C
20
50
0
0
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
Tc (°C)
20
25
30
35
40
150
175
150
175
Vcc (V)
Figure 22. Undervoltage shutdown
Figure 23. Turn-on voltage slope
Vusd (V)
(dVout/dt )On (V/ms)
16
1000
900
14
Vcc=13V
RI=6.5 Ohm
800
12
700
10
600
8
500
400
6
300
4
200
2
100
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
50
75
100
125
Tc (°C)
Figure 24. ILIMH Vs. Tcase
Figure 25. Turn-off voltage slope
Ilimh (A)
(dVout/dt )Off (V/ms)
40
600
550
35
500
Vcc=13V
Vcc=13V
RI= 6.5 Ohm
450
30
400
350
25
300
250
20
200
150
15
100
50
10
0
-50
-25
0
25
50
75
100
125
150
175
-50
Tc (°C)
-25
0
25
50
75
100
125
Tc (°C)
Doc ID 16611 Rev 2
21/35
Electrical specifications
VN5E050MJ-E
Figure 26. CS_DIS high level voltage
Figure 27. CS_DIS clamp voltage
Vcsdcl(V)
Vcsdh (V)
10
4
9
3,5
8
3
Iin = 1 mA
7
2,5
6
5
2
4
1,5
3
1
2
0,5
1
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
Figure 28. CS_DIS low level voltage
Vcsdl (V)
3
2,5
2
1,5
1
0,5
0
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
22/35
-25
0
25
50
75
Tc (°C)
Tc (°C)
Doc ID 16611 Rev 2
100
125
150
175
VN5E050MJ-E
3
Application information
Application information
Figure 29. Application schematic
+5V
VCC
Rprot
CS_DIS
Dld
ΜCU
Rprot
IINPUT
OUTPUT
Rprot
CURRENT SENSE
GND
RGND
RSENSE
VGND
Cext
3.1
DGND
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1
Solution 1: resistor in the ground line (RGND only)
This can be used with any type of load.
The following show how to dimension the RGND resistor:
1.
RGND ≤ 600mV / (IS(on)max)
2.
RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in RGND (when VCC<0 during reverse battery situations) is:
PD= (-VCC)2/RGND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output
Doc ID 16611 Rev 2
23/35
Application information
VN5E050MJ-E
values. This shift varies depending on how many devices are ON in the case of several high
side drivers sharing the same RGND.
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2
Solution 2: diode (DGND) in the ground line
Note that a resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device drives
an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (j600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
3.2
Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3
MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins is pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent
the MCU I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of MCU and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of MCU
I/Os:
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHμC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak = - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 180kΩ
Recommended values: Rprot =10kΩ, CEXT=10nF.
24/35
Doc ID 16611 Rev 2
VN5E050MJ-E
3.4
Application information
Current sense and diagnostic
The current sense pin performs a double function (see Figure 30: Current sense and
diagnostic):
●
Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a know ratio KX.
The current ISENSE can be easily converted to a voltage VSENSE by means of an
external resistor RSENSE. Linearity between IOUT and VSENSE is ensured up to 5V
minimum (see parameter VSENSE in Table 9: Current sense (8V<VCC<18V)). The
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8V<VCC<18V)).
●
Diagnostic flag in fault conditions, delivering a fixed voltage VSENSEH up to a
maximum current ISENSEH in case of the following fault conditions (refer to Truth table):
–
Power limitation activation
–
Overtemperature
A logic level high on CS_DIS pin sets at the same time all the current sense pins of the
device in a high impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
Figure 30. Current sense and diagnostic
VBAT
VCC
Main MOSn
41V
Overtemperature
IOUT/KX
ISENSEH
Pwr_Lim
OUTn
VSENSEH
CS_DIS
CURRENT
SENSEn
GND
Load
RPROT
To uC ADC
RSENSE
VSENSE
Doc ID 16611 Rev 2
25/35
Application information
3.5
VN5E050MJ-E
Maximum demagnetization energy (VCC = 13.5V)
Figure 31. Maximum turn-off current versus inductance
100
A
B
C
I (A)
10
1
0,1
1
L (mH)
10
100
A: Tjstart = 150°C single pulse
B: Tjstart = 100°C repetitive pulse
C: Tjstart = 125°C repetitive pulse
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
LΩ. In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves A and B.
26/35
Doc ID 16611 Rev 2
VN5E050MJ-E
Package and PCB thermal data
4
Package and PCB thermal data
4.1
PowerSSO-12 thermal data
Figure 32. PowerSSO-12 PC board
Note:
Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4
area = 77 mm x 86 mm, PCB thickness = 1.6 mm, Cu thickness = 70 µm (front and back
side), Copper areas: from minimum pad lay-out to 8 cm2).
Figure 33. Rthj-amb Vs. PCB copper area in open box free air condition
RTHj_amb( °C/ W)
65
60
55
50
45
40
35
0
2
4
6
8
10
PCB Cu heatsink area (cm^ 2)
Doc ID 16611 Rev 2
27/35
Package and PCB thermal data
VN5E050MJ-E
Figure 34. PowerSSO-12 thermal impedance junction ambient single pulse
ZTH ( °C/ W)
Footprint
100
2 cm2
8 cm2
10
1
0,1
0,001
0,01
0,1
1
Time ( s)
10
100
1000
Equation 1: pulse calculation formula
Z
THδ
= R
TH
⋅δ+Z
THtp
(1 – δ)
where δ = tP/T
Figure 35. Thermal fitting model of a single channel HSD in PowerSSO-12
(a)
a. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
28/35
Doc ID 16611 Rev 2
VN5E050MJ-E
Package and PCB thermal data
Table 14.
Thermal parameter
Area/island (cm2)
Footprint
R1 (°C/W)
0.7
R2 (°C/W)
2.8
R3 (°C/W)
3
R4 (°C/W)
2
8
8
8
7
R5 (°C/W)
22
15
10
R6 (°C/W)
26
20
15
C1 (W.s/°C)
0.001
C2 (W.s/°C)
0.0025
C3 (W.s/°C)
0.0166
C4 (W.s/°C)
0.2
0.1
0.1
C5 (W.s/°C)
0.27
0.8
1
C6 (W.s/°C)
3
6
9
Doc ID 16611 Rev 2
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Package information
VN5E050MJ-E
5
Package information
5.1
ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
5.2
Package mechanical data
Figure 36. PowerSSO-12 package dimensions
30/35
Doc ID 16611 Rev 2
VN5E050MJ-E
Package information
Table 15.
PowerSSO-12 mechanical data
Millimeters
Symbol
Min.
Typ.
Max.
A
1.250
1.620
A1
0.000
0.100
A2
1.100
1.650
B
0.230
0.410
C
0.190
0.250
D
4.800
5.000
E
3.800
4.000
e
0.800
H
5.800
6.200
h
0.250
0.500
L
0.400
1.270
k
0°
8°
X
2.200
2.800
Y
2.900
3.500
ddd
0.100
Doc ID 16611 Rev 2
31/35
Package information
5.3
VN5E050MJ-E
Packing information
Figure 37. PowerSSO-12 tube shipment (no suffix)
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
A
100
2000
532
1.85
6.75
0.6
All dimensions are in mm.
Figure 38. PowerSSO-12 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.05)
D1 (min)
F (± 0.1)
K (max)
P1 (± 0.1)
12
4
8
1.5
1.5
5.5
4.5
2
All dimensions are in mm.
End
Start
Top
cover
tape
No components
Components
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
32/35
Doc ID 16611 Rev 2
No components
500mm min
VN5E050MJ-E
6
Order codes
Order codes
Table 16.
Device summary
Order codes
Package
PowerSSO-12
Tube
Tape and reel
VN5E050MJ-E
VN5E050MJTR-E
Doc ID 16611 Rev 2
33/35
Revision history
7
VN5E050MJ-E
Revision history
Table 17.
34/35
Document revision history
Date
Revision
Changes
03-Nov-2009
1
Initial release.
19-Sep-2013
2
Updated Disclaimer.
Doc ID 16611 Rev 2
VN5E050MJ-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
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