BSL316C
OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor
Product Summary
Features
P
N
-30
30
V
VGS=±10 V
150
160
mW
VGS=±4.5 V
270
280
-1.5
1.4
· Complementary P + N channel
VDS
· Enhancement mode
RDS(on),max
· Logic level (4.5V rated)
· Avalanche rated
ID
A
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
PG-TSOP6
· Halogen free according to IEC61249-2-21
6
1
2
5
4
3
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSL316C
PG-TSOP-6
H6327: 3000 pcs / reel
sPJ
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Continuous drain current
ID
N
T A=25 °C
-1.5
1.4
T A=70 °C
-1.2
1.1
-6.0
5.6
11
3.7
I D,pulse
T A=25 °C
Avalanche energy, single pulse
E AS
P: I D=-1.5 A,
N: I D=1.4 A,
R GS=25 W
Gate source voltage
V GS
Power dissipation1)
P tot
Operating and storage temperature
T j, T stg
ESD class
T A=25 °C
JESD22-A114-HBM
T solder
A
mJ
±20
V
0.5
W
-55 ... 150
°C
0 (<250V)
260
°C
55/150/56
IEC climatic category; DIN IEC 68-1
1)
Unit
P
Pulsed drain current
Soldering temperature
Value
Symbol Conditions
Remark: only one of both transistors active
Rev. 2.3
page 1
2014-07-21
BSL316C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
K/W
-
-
-30
V
Thermal characteristics
Thermal resistance, junction ambient1)
P
R thJA
minimal footprint 2)
N
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
P V (BR)DSS V GS=0 V, I D=-250 µA
N
V GS=0 V, I D=250 µA
30
-
-
P V GS(th)
V DS=V GS, I D=-11 µA
-2
-1.5
-1
N
V DS=V GS, I D=3.7 µA
1.2
1.6
2
P I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-
-1
N
V DS=30 V, V GS=0 V,
T j=25 °C
-
-
1
P
V DS=-30 V, V GS=0 V,
T j=150 °C
-
-
-100
N
V DS=30 V, V GS=0 V,
T j=150 °C
-
-
100
V GS=±20 V, V DS=0 V
-
-
±100
nA
P R DS(on)
V GS=-4.5 V, I D=1.1 A
-
177
270
mW
N
V GS=4.5 V, I D=-1.1 A
-
191
280
P
V GS=-10 V, I D=-1.5 A
-
113
150
N
V GS=10 V, I D=1.4 A
-
119
160
P g fs
|V DS|>2|I D|R DS(on)max,
I D=-1.18 A
-
2.7
-
N
|V DS|>2|I D|R DS(on)max,
I D=1.1 A
-
2.3
-
P
I GSS
µA
N
Drain-source on-state
resistance
Transconductance
S
2)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB
Rev. 2.3
page 2
2014-07-21
BSL316C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
212
282
-
71
94
-
69
91
-
26
35
P Crss
-
56
84
N
-
5
7
P t d(on)
-
5.0
-
-
3.4
-
-
6.5
-
-
2.3
-
-
14.3
-
-
5.8
-
P tf
-
7.5
-
N
-
1.0
-
P Q gs
-
-0.6
-
-
-1.2
-
-
-2.4
-
-
-2.9
-
-
0.3
-
-
0.2
-
0.6
-
3.4
-
Dynamic characteristics
Input capacitance
P C iss
N
Output capacitance
P C oss
N
Reverse transfer capacitance
Turn-on delay time
V GS=0 V,
P: V DS=-15 V,
N: V DS= 15 V,
f =1 MHz
N
Rise time
P tr
N
Turn-off delay time
P t d(off)
N
Fall time
P: V DD=-15 V,
V GS=-10 V, R G=6 W,
I D=-1.5 A
N: V DD=15 V,
V GS=10 V, R G=6 W,
I D=1.4 A
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q gd
Switching charge
Qg
Gate plateau voltage
V plateau
Gate to source charge
N Q gs
Gate to drain charge
Q gd
Switching charge
Qg
Gate plateau voltage
V plateau
Rev. 2.3
V DD=-15 V,
I D=-1.5 A,
V GS=0 to -5 V
V DD=15 V,
I D=1.4 A,
V GS=0 to 5 V
-
page 3
nC
2014-07-21
BSL316C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
-0.5
-
-
0.5
P I S,pulse
-
-
-6.0
N
-
-
5.6
Reverse Diode
Diode continuous forward current
P IS
N
A
T C=25 °C
Diode pulse current
Diode forward voltage
Reverse recovery time
P V SD
V GS=0 V, I F=-1.5 A,
T j=25 °C
-
-0.8
-1.1
N
V GS=0 V, I F=1.4 A,
T j=25 °C
-
0.86
1.1
-
8.2
-
-
9.1
-
-
2.1
-
-
2.6
-
P t rr
N
Reverse recovery charge
P Q rr
V R=±15 V, I F=I S,
di F/dt =100 A/µs
N
Rev. 2.3
page 4
V
ns
nC
2014-07-21
BSL316C
2 Power dissipation (N)
P tot=f(T A)
P tot=f(T A)
0.6
0.6
0.5
0.5
0.4
0.4
Ptot [W]
Ptot [W]
1 Power dissipation (P)
0.3
0.3
0.2
0.2
0.1
0.1
0
0
0
40
80
120
0
160
40
TA [°C]
4 Drain current (N)
I D=f(T A)
I D=f(T A)
parameter: V GS≤-10 V
parameter: V GS≥10 V
1.6
1.6
1.4
1.4
1.2
1.2
1
1
ID [A]
-ID [A]
120
160
120
160
TA [°C]
3 Drain current (P)
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0
0
40
80
120
160
TA [°C]
Rev. 2.3
80
0
40
80
TA [°C]
page 5
2014-07-21
BSL316C
5 Safe operating area (P)
6 Safe operating area (N)
I D=f(V DS); T A=25 °C; D =0
I D=f(V DS); T A=25 °C; D =0
parameter: t p
parameter: t p
101
101
1 µs
1 µs
10 µs
10 µs
100 µs
100 µs
1 ms
100
100
1 ms
10 ms
ID [A]
-ID [A]
10 ms
DC
10-1
DC
10-1
10-2
10-2
10-1
100
101
102
10-1
100
-VDS [V]
101
VDS [V]
7 Max. transient thermal impedance (P)
8 Max. transient thermal impedance (N)
Z thJA=f(t p)
Z thJA=f(t p)
parameter: D =t p/T
parameter: D =t p/T
103
103
0.5
0.5
ZthJA [K/W]
102
ZthJA [K/W]
102
0.2
0.1
0.05
101
0.2
0.1
0.05
101
0.02
0.01
0.02
0.01
single pulse
single pulse
100
100
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
Rev. 2.3
102
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
page 6
2014-07-21
BSL316C
9 Typ. output characteristics (P)
10 Typ. output characteristics (N)
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: V GS
parameter: V GS
6
6
-10 V -5 V -4.5 V
-4 V
10 V
5V
4.5 V
5
5
4
-3.5 V
ID [A]
-ID [A]
4
3
2
4V
3
2
-3 V
3.5 V
1
1
3V
-2.5 V
0
2.5 V
0
0
1
2
3
0
1
2
-VDS [V]
3
VDS [V]
11 Typ. drain-source on resistance (P)
12 Typ. drain-source on resistance (N)
R DS(on)=f(I D); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
400
350
350
-3 V
3.5 V
-3.5 V
300
300
RDS(on) [mW]
RDS(on) [mW]
4V
250
-4 V
200
-4.5 V
-5 V
150
4.5 V
200
5V
150
10 V
-10 V
100
100
50
50
0
0
0
1
2
3
4
5
-ID [A]
Rev. 2.3
250
0
1
2
3
4
5
ID [A]
page 7
2014-07-21
BSL316C
13 Typ. transfer characteristics (P)
14 Typ. transfer characteristics (N)
I D=f(V GS); |V DS |>2 | ID| RDS(on)max
I D=f(V GS); |V DS |>2 | I D | R DS(on)max
parameter: T j
parameter: T j
6
6
5
5
25 °C
150 °C
25 °C
4
ID [A]
-ID [A]
4
3
3
150 °C
2
2
1
1
0
0
0
1
2
3
4
0
5
1
2
-VGS [V]
3
4
VGS [V]
16 Drain-source on-state resistance (N)
R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V
R DS(on)=f(T j); I D=1.4 A; V GS=10 V
300
300
250
250
200
200
RDS(on) [mW]
RDS(on) [mW]
15 Drain-source on-state resistance (P)
98%
150
5
98%
150
typ
typ
100
100
50
50
0
0
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.3
-60
-20
20
60
100
140
180
Tj [°C]
page 8
2014-07-21
BSL316C
17 Typ. gate threshold voltage (P)
18 Typ. gate threshold voltage (N)
V GS(th)=f(T j); V GS=V DS; I D=-11 µA
V GS(th)=f(T j); V GS=V DS; I D=3.7 µA
2.8
2.8
2.4
2.4
2
1.6
VGS(th) [V]
-VGS(th) [V]
max
min
2
typ
1.2
1.6
typ
1.2
min
max
0.8
0.8
0.4
0.4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
19 Typ. capacitances (P)
20 Typ. capacitances (N)
C =f(V DS); V GS=0 V; f =1 MHz
C =f(V DS); V GS=0 V; f =1 MHz
103
102
Ciss
Coss
C [pF]
C [pF]
Ciss
102
Coss
101
Crss
Crss
101
100
0
10
20
30
-VDS [V]
Rev. 2.3
0
10
20
30
VDS [V]
page 9
2014-07-21
BSL316C
21 Forward characteristics of reverse diode (P)
22 Forward characteristics of reverse diode (N)
I F=f(V SD)
I F=f(V SD)
parameter: T j
parameter: T j
101
101
100
100
150 °C
25 °C
150 °C
IF [A]
-IF [A]
25 °C
10-1
10-1
25 °C, 98%
98%, 150°C
150 °C, 98%
98%, 25 °C
10-2
10-2
0
0.5
1
1.5
2
0
0.5
1
-VSD [V]
24 Avalanche characteristics (N)
I AS=f(t AV); R GS=25 W
I AS=f(t AV); R GS=25 W
parameter: T j(start)
parameter: T j(start)
10
IAV [A]
10
-IAV [A]
2
VSD [V]
23 Avalanche characteristics (P)
25 °C
1
100 °C
125 °C
0.1
1
25 °C
125 °C
100 °C
0.1
1
10
100
1000
tAV [µs]
Rev. 2.3
1.5
1
10
100
1000
tAV [µs]
page 10
2014-07-21
BSL316C
25 Typ. gate charge (P)
26 Typ. gate charge (N)
V GS=f(Q gate); I D=-1.5 A pulsed
V GS=f(Q gate); I D=1.4 A pulsed
parameter: V DD
parameter: V DD
10
10
8
8
6V
-6 V
-15 V
15 V
24 V
-24 V
6
VGS [V]
-VGS [V]
6
4
4
2
2
0
0
0
1
2
3
4
5
0
0.2
0.4
-Qgate [nC]
0.6
0.8
28 Drain-source breakdown voltage (N)
V BR(DSS)=f(T j); I D=-250 µA
V BR(DSS)=f(T j); I D=250 µA
36
36
34
34
32
32
VBR(DSS) [V]
-VBR(DSS) [V]
1.2
140
180
Qgate [nC]
27 Drain-source breakdown voltage (P)
30
30
28
28
26
26
24
24
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.3
1
-60
-20
20
60
100
Tj [°C]
page 11
2014-07-21
BSL316C
Package Outline:
TSOP6
Footprint:
Packaging:
Dimensions in mm
Note: For symmetric types there is no defined Pin 1 orientation in the reel.
Rev. 2.3
page 12
2014-07-21
BSL316C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3
page 13
2014-07-21