18 mm Dia. PROXIMITY FOCUSED IMAGE INTENSIFIER ASSEMBLY V6833P/V6833P-G/V7090P FEATURES ●High Photocathode Sensitivity (GaAs Photocathode) ●ABC (Automatic Brightness Control) ●Bright Source Protection ●High Luminous Gain ●No Image Distortion ●Compact and Light Weight ●Auto Gating Function (V6833P-G) APPLICATIONS ●Night Viewer Goggle, Hand Held Scope, HMD (Head Mount Display) etc. Left: V6833P, Right: V7090P SPECIFICATIONS GENERAL Parameter Input Voltage Max. Input Voltage Max. Input Current Spectral Response Wavelength of Peak Response Material Photocathode Minimum Effective Diameter Material Thickness Input Window Index of Refraction (at 588 nm) Stage of MCP Material Phosphor Screen Minimum Effective Diameter Output Window Material Case Material Weight Operating Ambient Temperature Operating Ambient Humidity A Storage Temperature Storage Humidity A V6833P / V6833P-G / V7090P +2 to +3 +3.5 35 370 to 920 600 to 750 GaAs 17.5 Borosilicate Glass 5.5 1.49 1 P43 17.5 V6833P / V6833P-G: Inverting Concave Fiber Optic Plate V7090P: Straight Concave Fiber Optic Plate POM (Polyoxymethylene) V6833P / V6833P-G: Approx. 80 / V7090P: Approx. 85 -20 to +40 Below 70 -55 to +60 Below 70 Unit V V mA nm nm — mm — mm — — — mm — — g °C % RH °C % RH NOTE: ANo condensation CHARACTERISTICS (at +20 °C) Photocathode Sensitivity Parameter Luminous Radiant B Quantum Efficiency B Luminous Gain EBI Limiting Resolution Luminous MTF 2.5 lp/mm 7.5 lp/mm 15 lp/mm 25 lp/mm Magnification Min. 1000 — — 1.0 × 104 — 51 — — — — 0.96 Typ. 1500 170 30 4.0 × 104 1.0 × 10-11 64 92 80 61 38 — Max. — — — — 5.0 × 10-11 — — — — — 1.04 Unit µA/lm mA/W % (lm/m2) / lx lm/cm2 Lp/mm % % % % — NOTE: BAt the wavelength of peak response Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K. PROXIMITY FOCUSED IMAGE INTENSIFIER ASSEMBLY V6833P/V6833P-G/V7090P MAXIMUM SPOTS ALLOWED IN EACH ZONE Number Allowed B: 5.6 mm to 14.7 mm C: 14.7 mm to 17.5 mm 0 1 1 3 6 9 A: 5.6 mm 0 0 3 230 µm< 150 µm to 230 µm 75 µm to 150 µm Figure 1: Typical Spectral Response TII B0123EA 102 TII B0070EC PHOTOCATHODE RADIANT SENSITIVITY LUMINOUS EXITANCE (lm/m2) 100 10 4 MI N. .0× 04 :5 ×1 IN 100 .0 :1 IN QUANTUM EFFICIENCY 101 101 GA 102 GA PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 103 Figure 2: Typical Photocathode Illuminance vs Phosphor Screen Luminous Exitance 10-1 10-2 10-6 10-1 10-5 10-4 10-3 10-2 10-1 100 INPUT ILLUMINANCE (lx) 10-2 200 300 400 500 600 700 800 900 1000 WAVELENGTH (nm) Figure 3: Dimensional Outline (Unit: mm) ●V6833P/V6833P-G 31.0 ± 0.2 18.6 26 +0 36.8 - 0.2 2.5 R40 1.5 INPUT WINDOW (BOROSILICATE GLASS) 18.6 19.0 ± 0.1 5 4±1 INPUT VOLTAGE (+2 V to +3 V) 0.35 EFFECTIVE PHOSPHOR SCREEN AREA 17.5 MIN. 4.9 1.0 ± 0.1 60 ° 5.5 ± 0.1 EFFECTIVE PHOTOCATHODE AREA 17.5 MIN. OUTPUT WINDOW (INVERTING CONCAVE FIBER OPTIC PLATE) 9.5 GND PHOTOCATHODE (GaAs) INPUT VIEW OUTPUT VIEW ●V7090P TII A0031EE 8 0. R EFFECTIVE PHOTOCATHODE AREA 17.5 MIN. 1.6 ± 0.15 INPUT WINDOW PHOTOCATHODE 31.3 ± 0.6 EFFECTIVE PHOSPHOR SCREEN AREA 17.5 MIN. 4.8 ± 0.15 INPUT VOLTAGE (+2 V to +3 V) GND 14.20 ± 0.15 ± 0.1 +0.13 R18 + 23 - 0 +0.2 21.6 - 0 43.1 - 0.75 +0.08 – OUTPUT WINDOW (STRAIGHT CONCAVE FIBER OPTIC PLATE) 0.63 ± 0.10 5.5 ± 0.1 INPUT VIEW 19.73 ± 0.30 3.25 ± 0.15 HAMAMATSU PHOTONICS K.K. OUTPUT VIEW TII A0048EE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TII 1060E02 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: info@hamamatsu.it DEC. 2014 IP China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn