Knowlton
MSE/ECE 510
Quiz 6 – Learning objectives
Topics:
• Lectures of course covering Ch. 6 of Kasap
• MOS, tunneling, high-k, NVM devices
Learning Objectives: For the quiz, the student should know how to:
• Write down Poisson’s equation and define all variables
•
Explain the concept of Poisson’s equation
•
Show that Poisson’s equation is a force-energy relation
•
Write down the relationship between energy and voltage and define all variables
•
Describe the MOS modes of operation: depletion, accumulation, inversion for the
following cases:
o φm < φsc
o φm > φsc
•
Name and define the three different types of tunneling, the governing equation
and associated parameters in the equation.
•
Describe the benefits of high-k dielectrics using BGE and SP3 including:
o Idrain and the variables that are in and govern the equation
o Jgate and the variables that are in and govern the equation
o Eg
o Band offsets
•
For a charge trap-based NVM flash memory device, define BL, CTL, and TL.
•
Draw the energy band diagram for flatband and equilibrium conditions of the
following structures:
o Metal Gate-High-k-pSi
o Metal Gate-High-k – IL-pSi
o Metal Gate-High-k – IL-p-SiGe-pSi
o NVM with Metal Gate-BL-CTL-TL-pSi for:
•

kBL>kCTL>kTL

kCTL>kBL> kTL
Using BGE and SP3, describe the parameters to consider (& why) when
engineering a charge trap-based NVM flash memory device relative to the BL,
CTL, and TL.