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SAMPLE MATERIALS SCIENCE AND ENGINEERING RESUME- PhD
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420 Main Street, Apt. B7  Pittsburgh, PA 15232  Phone: (412) 555-5555  E-mail: mse@cmu.edu
SUMMARY OF QUALIFICATIONS
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Materials science engineer / researcher with in-depth knowledge on compound semiconductor, SiC
Ability to work collaboratively with commitment to achieve corporate goals
Excellent materials engineering project management skills
Hands-on skills with various tools, equipment and computer software
EDUCATION
Carnegie Mellon University, Pittsburgh, PA
Ph.D. in Materials Science and Engineering
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Thesis: Effect of doping on properties of hexagonal polytype silicon carbide crystals
May 2015
Seoul National University, Seoul, South Korea
M.S. in Metallurgical Engineering
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Thesis: Thermodynamic evaluation of phase equilibria of the Ti-Mo-C-N quaternary system
B.S. in Metallurgical Engineering
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Seoul National University Scholarship
June 2009
June 2007
EXPERIENCE
Carnegie Mellon University, Pittsburgh, PA
Graduate Researcher, Materials Science and Engineering
September 2011 – Present
GROWTH OF HIGH-PURITY SEMI-INSULATING 6H-SIC THICK FILMS AND BULK CRYSTALS
Funded by Defense Advanced Research Projects Agency (DARPA)
Conducted in collaboration with the Pennsylvania State University Applied Research Laboratory (ARL)
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Planned and executed 210+ experiments to establish a new chemical vapor deposition (CVD) process
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Worked in cooperation with three other colleagues in a team and attended monthly meetings with ARL
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Accomplished the growing of high-purity 6H-SiC single crystals with good semi-insulating properties, the
lowest reported impurity levels close to or below the detection limit of secondary ion mass spectroscopy
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Developed and implemented new features with the CVD system to improve the process
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Diagnosed and solved various problems related to the CVD system
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Published and presented findings at international conferences (ICSCRM 2012 and ICCG 2011)
EFFECT OF NITROGEN DOPING ON 4H-SIC SINGLE CRYSTAL
Funded by Office of Naval Research (ONR)
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Designed series of experiments in order to prove a working hypothesis defined through addressing the
contradiction between conventional viewpoint and experimental observations on the spontaneous formation of
structural defects in highly nitrogen doped 4H-SiC
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Prepared and inspected samples with both conventional TEM and High-Resolution TEM
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Analyzed samples with High-Resolution X-Ray Diffraction and Optical Absorption Spectrometer
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Verified the mechanism of the phenomena and identified the upper limit of nitrogen doping above which
structural defects would form spontaneously at device processing temperature
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Published and presented findings at international conference (ECSCRM 2011)
Course Assistant, Materials Science and Engineering
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Graded homework for graduate and undergraduate courses
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Assisted students in understanding topics in courses
2011 – Present
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Korean Electronics Technology Institute, South Korea
Project Engineer
2009 – 2010
SURFACE ACOUSTIC WAVE PROPAGATION PROPERTIES OF NITROGENATED DIAMOND-LIKE CARBON FILMS
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Developed simulation programs with FORTRAN
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Predicted the velocity of surface acoustic waves of multi layered thin film and verified experimental results
through the developed programs
Seoul National University, South Korea
Graduate Researcher, Materials Science and Engineering
2007 – 2009
THERMODYNAMIC EVALUATION OF PHASE EQUILIBRIA OF THE TI-MO-C-N QUATERNARY SYSTEM
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Obtained and validated experimental thermodynamic data related to Ti-Mo-C-N system
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Identified valid thermodynamic parameters and estimated the thermodynamic stability the system
SKILLS
Manufacturing Technologies: Extensive experience with equipment and processes of physical vapor transport (PVT)
and chemical vapor deposition (CVD)
Materials Testing and Characterization:
High-Resolution TEM(Transmission Electron Microscopy) , Conventional TEM, Scanning Electron Microscopy,
High-Resolution X-Ray Diffractometer, Powder and Laue X-Ray Diffractometer, X-Ray Topography,
Optical Microscopy, Optical Absorption Spectrometer,
Hall Measurements, Deep Levels Transient Spectroscopy, Scanning Electron Microscopy,
Computer: ThermoCalc, HSC Chemistry, Visio, Origin, Minitab, Mathematica, C, C++, Assembly, FORTRAN
Languages: Korean; Japanese
CONFERENCES
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Poster Presentation, ‘Electrical Properties of undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide
Chemical Vapor Deposition,’ ICSCRM 2011 (International Conference on Silicon Carbide and Related
Materials), Pittsburgh, Pennsylvania, USA, September 2011
Oral Presentation, ‘Properties of Thick 6H-SiC Crystals Grown by Halide Chemical Vapor Deposition,’
ICCG 2011 (International Conference on Crystal Growth), Grenoble, France, August 2010
Poster Presentation, ‘Halide Chemical Vapor Deposition growth of High-Purity 6H-SiC.’ ICCG 2010
(International Conference on Crystal Growth), Grenoble, France, August 2011
PUBLICATIONS
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Authors, “Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor
Deposition,” accepted for publication in Materials Science Forum.
Authors, “Bulk Growth of High-Purity 6H-SiC by Halide Chemical Vapor Deposition,” Journal of Applied
Physics, 97 (2011) 084913
Authors, “High-resolution X-ray diffraction and optical absorption study of heavily nitrogen doped 4H-SiC
crystals,” Journal of Crystal Growth., 259 (2010) 52-60
Authors, “Stacking fault formation in highly doped 4H-SiC epilayers during annealing,” Materials Science
Forum, 433-436, (2011) 253-256
Authors, “Stacking fault formation in highly doped 4H-SiC epilayers during annealing,” Applied Physics
Letter, 81 (2009) 3759-3761
Authors, “Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC,” accepted for
publication in Materials Science Forum
ACTIVITIES
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Korean Central Church of Pittsburgh, President of Young Adult Group, 2014
Volunteer, biweekly visits to the nursing home for retired nuns, 2013 – Present