NEW MATERIALS AND NANOTECHNOLOGY
DEVELOPMENT AND INVESTIGATION OF FAST-OPERATING MICROWAVE
SWITCHING DEVICES WITH 4H-SiC PIN DIODES FOR THE 1÷40 GHz FREQUENCY
RANGE
Description
We propose to develop the design and technology, make
prototypes and carried out comprehensive investigations
of a number of small-size microwave devices with fastoperating high-voltage 4H-SiC pin diodes for control
over amplitude and phase of microwave signals in the
1÷40 GHz frequency range. The devices are to be
developed using the hybrid integrated circuit technology.
The study of device characteristics is to be performed at
low (up to 200 mW) and high (up to 100 W) levels of
continuous microwave power over the wide (70÷+400 С) temperature range.
Usually it involves a low-noise amplifier, power amplifier,
transmit-receive switch and phase shifter. Application of the
fast-operating microwave switching devices with 4H-SiC
pin diodes (that are capable of reliable operation at high
microwave power levels and elevated temperature) will
increase considerably the efficiency of electronically
scanned antennas.
Innovative Aspect and Main Advantages:
The heat conductivity of 4H-SiC is almost for times that
of silicon, and operating temperatures of the 4H-SiC
devices can be at least four times those of the Si devices.
The avalanche field in 4H-SiC is ~2.2106 V/cm, while
in Si it is ~2.5105 V/cm. So the SiC pin diodes can
switch microwave signals of power ten times that of the
Si pin diodes (with the same i-layer thickness), and with
the same switching speed.
In the framework of the NATO “Science for Peace”
Program Project SfP 978011 “Microwave Switching Units
Based on 4H-SiC p-i-n Diodes (SICPIN)”, the authors
have developed the manufacturing and packaging
technologies for the 4H-SiC pin diodes that can operate
in the 20÷700 С temperature range. The investigations
carried out by the authors in the course of Project
SfP 978011 realization demonstrated also the possibility
of development of broad band microwave amplitude
modulators with such diodes intended for the X and Ka
ranges, with the transmission losses of 1.5÷2.0 dB and
isolation of over 25÷40 dB. The modulators operated at
pulse microwave power levels up to 1÷2 kW.
Fig.1 The general view of the packaged modulator with 4HSiC pin diodes and microwave hybrid integrated circuit (a).
The view of the modulator on the side of the pin diode
control unit (b). A ruler with mm scale is shown beside the
modulator.
Stage of Development:
The laboratory testing of the prototypes.
Contact details:
Boltovets Mykola Sylovych,
Tel. / Fax: +380 44 456-05-48
E-mail: bms@i.kiev.ua
Areas of Application:
The application areas of the fast-operating microwave
switching devices with 4H-SiC pin diodes are as follows:
the technologies of electronically scanned antennas for
radars, communication systems and navigation. The
technology of electronically scanned antennas finds wide
application in various programs of development of
modern ground-, sea-, air- and space-based radars that are
realized by the leading world companies.
The known advantages of the electronically scanned
antennas determine the search for novel technical
solutions making it possible to improve the characteristics
and extend the capabilities of transceiver modules which
are the design basis for the active arrays. The
fundamental circuit arrangement of transceiver module
practically depends but slightly on the wavelength.
TPFe 275_02