THE UNIVERSITY OF BRITISH COLUMBIA
Publications Record
SURNAME: PULFREY
FIRST NAME:
MIDDLE NAME (S):
David
Leslie
Initials: D.L.P.
Date: 13 / Dec / 2009
Those publications considered to be of primary importance are indicated by an asterisk.
1.
REFEREED PUBLICATIONS
(a)
Journals (inverse chronological order to 2000: chronological order 1968-1999)
1. G.B. Abadir, K. Walus, and D.L. Pulfrey, " Bias-dependent amino-acid-induced conductance changes in short
semi-metallic carbon nanotubes", Nanotechnology, 21, 015202, 2010.
2. Li Chen and D.L. Pulfrey, "Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency
performance, Solid-State Electronics, 53, 935-939, 2009.
3. G.B. Abadir, K. Walus, and D.L. Pulfrey, "Comment on "Curvature effects on electronic properties of small
radius nanotube"[Appl. Phys. Lett. 91, 033102 (2007)]", Appl. Phys. Lett., 94, 176101, 2009.
4. G.B. Abadir, K. Walus, and D.L. Pulfrey, “Basis-Set Choice for DFT/NEGF Simulations of Carbon Nanotubes".
J. Computational Electronics, 8, 1-9, 2009.
5. *B. Faraji, W. Shi, D.L Pulfrey, and L. Chrostowski, “Analytical modeling of the transistor laser”, IEEE J. Sel.
Topics Quantum Electronics, 15, 594-603, 2009.
6. Behnam Faraji, Wei Shi, David L. Pulfrey, and Lukas Chrostowski, "Common-emitter and common-base
small-signal operation of the transistor laser", Appl. Phys. Lett., 93, 143503, 2008.
7. B. Faraji, D.L. Pulfrey, and L. Chrostowski, “Small-signal modeling of the transistor laser including quantum
capture and escape lifetimes”, Appl. Phys. Lett., 93, 10359, 2008.
8. G. Abadir, K. Walus, R.F.B. Turner, and D.L. Pulfrey, “Biomolecular Sensing using Carbon Nanotubes: A
Simulation Study”, Int. J. High-Speed Electronic Systems, 18(4), 879-997, 2008.
9. * D.L. Pulfrey and Li Chen, “Examination of the high-frequency capability of carbon nanotube FETs”. SolidState Electronics, 52, 1324-1328, 2008.
10. * D.L. Pulfrey, L.C. Castro, D.L. John, and M. Vaidyanathan, “Regional signal-delay analysis applied to highfrequency carbon nanotube FETs, IEEE Trans. Nanotechnology, 6(6), 711-717, 2007.
11. D.L. John and D.L. Pulfrey, "Issues in the modeling of carbon nanotube FETs: structure, gate thickness and
azimuthal asymmetry ," J. Computational Electronics. 6, 175-178, 2007. Online: SpringerLink
DOI:10.1007/s10825-006-0080-z.
12. L.C. Castro, D.L. Pulfrey and D.L. John, ``High-frequency capability of Schottky-barrier carbon nanotube
FETs'', Solid-State Phenomena, 121-123, 693-696, 2007.
13. D.L. McGuire and D.L. Pulfrey, "A multi-scale model for mobile and localized electroluminescence in carbon
nanotube field-effect transistors ," Nanotechnology, 17, 5805-5811, 2006.
14. * D.L. John and D.L. Pulfrey, “Switching-speed calculations for Schottky-barrier Carbon Nanotube FETs”,
J.Vac.Sci.Tech.A, 24, 708-712, 2006.
15. D.L. McGuire and D.L. Pulfrey, “Error Analysis of Boundary-Condition Approximations in the Modeling of
Coaxially gated Carbon nanotube FETs”, Physica Status Solidi A, 203, 1111-1116, 2006.
16. D.L. John and D.L Pulfrey, ``Green's functions calculations for semi-infinite carbon nanotubes'', Physica Status
Solidi B, 243, 442-448, 2006.
17. * L.C. Castro and D.L. Pulfrey, ``Extrapolated fmax for carbon nanotube FETs'', Nanotechnology, 17, 300-304,
2006.
18. L.C. Castro, D.L. John and D.L. Pulfrey, ``An Improved Evaluation of the DC Performance of Carbon
Nanotube Field-EffectTransistors,'' Smart Material and Structures, 15, S9-S13, 2006.
19. D.L. Pulfrey, G. Parish, D.K. Wee, and B.D. Nener, ``Surface-layer damage and responsivity in sputteredITO/ p-GaN Schottky-barrier photodiodes'', Solid-State Electron., 49, 1969-1973, 2005.
20. * L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, and H. Kosina, ``Method for predicting fT for
carbon nanotube FETs'', IEEE Trans. Nanotechnology, 4, 699-704, 2005.
21. * D.L. John, L.C. Castro and D.L. Pulfrey, "Quantum Capacitance in Nanoscale Device Modeling," Journal of
Applied Physics, 96(9), 5180-5184, 2004.
Page 2/8
22. J.P. Clifford, D.L. John, L.C. Castro, and D.L. Pulfrey, "Electrostatics of Partially Gated Carbon Nanotube
FETs," IEEE Transactions Nanotechnology, 3(2), 281-286, 2004.
23. J.P. Clifford, D.L. John and D.L. Pulfrey, "Bipolar Phenomena and Drain-Induced Barrier Lowering in Schottkybarrier carbon nanotube FETs", IEEE Trans. Nanotechnology, 2(3), 181-185, 2003.
24. * D.L. John, L.C. Castro, J.P. Clifford, and D.L. Pulfrey, "Electrostatics of coaxial Schottky-barrier nanotube
field-effect transistors", IEEE Trans. Nanotechnology, 2(3), 175-180, 2003.
25. C.W. Fok and D.L. Pulfrey, “Full-chip power-supply noise: the effect of on-chip power-rail inductance”, Int. J.
High Speed Electronics and Systems, 12(2), 573-582, 2002.
26. J.J. Kuek, D.L. Pulfrey, B.D. Nener, J.M. Dell, G. Parish and U.K. Mishra, “Effects of band tail absorption on
AlGaN-based ultraviolet photodiodes”, Physica Status Solidi A, 188, 311-315, 2001.
27. * D.L. Pulfrey and S. Fathpour, “Performance predictions for n-p-n AlxGa1-xN/GaN HBTs, IEEE Trans. Elec.
Dev., 48, 597-602, 2001.
28. L.S. McCarthy, I.P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D.L. Pulfrey, J.S. Speck, M.J.W.
Rodwell, S.P. DenBaars and U.K. Mishra, “GaN HBT: Toward an RF device”, IEEE Trans. Elec. Dev., 48, 535542, 2001.
29. D.L. Pulfrey, J.J. Kuek, M.P. Leslie, B.D. Nener, G. Parish, U.K. Mishra, P.Kozodoy and E.J. Tarsa, “High
UV/Solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes”, IEEE Trans. Elec. Dev., 48, 486-489, 2001.
30. * D.L. Pulfrey, S. Fathpour, A.R. St.Denis, M. Vaidyanathan, W.A. Hagley and R.K. Surridge, “Applicability of
the traditional compact expressions for estimating the regional signal delay times of HBTs”, J. Vac. Sci.
Techn., 18A, 775-779, 2000.
31. A. Bradwell, D.L. Pulfrey, "Time of Breakdown in Solid Dielectrics", Brit. J. Appl. Phys., Ser. 2, 1, 1581-3,
1968.
32. W.A. Smith, C.T. Elliot, P.A. Chatterton, D.L. Pulfrey, "A Photographic Study of Electrical Breakdown at Small
Gaps in Vacuum", Brit. J. Appl. Phys., Ser. 2, 2, 1005-1013, 1969.
33. D.L. Pulfrey, "A Generator of High Voltage Pulses with Subnanosecond Risetime and Adjustable Duration", J.
Sci. Instr., Ser. 2, 2, 503-5, 1969.
34. D.L. Pulfrey, P.S. Wilcox, L. Young, "Dielectric Properties of Ta2O5 Thin Films", J. Appl. Phys., 40, 3891-8,
1969.
35. D.L. Pulfrey, A.H. Shousha, L. Young, "Electronic Conduction and Space Charge in Amorphous Insulating
Films", J. Appl. Phys., 41, 2828-43, 1970.
36. G. Olive, D.L. Pulfrey, L. Young, "The Estimation of Field Strengths in the Oxide During Conventional and
Plasma Anodization", J. Electrochem. Soc., 117, 945-7, 1970.
37. W.L. Lee, G. Olive, D.L. Pulfrey, L. Young, "Ionic Current as a Function of Field in the Oxide During Plasma
Anodization of Tantalum and Niobium", J. Electrochem. Soc., 117, 1172-6, 1970.
38. R. Cooper, D.L. Pulfrey, "Discharge Propagation in Single Crystals of KBr", Brit. J. Appl. Phys., Ser. 3, 4, 2927, 1971.
39. A.H. Shousha, D.L. Pulfrey, L. Young, "Filamentary Thermal Breakdown in Thin Dielectrics", J. Appl. Phys.,
43, 15-18, 1972.
40. D.L. Pulfrey, "The Electrical Breakdown of Solid Dielectrics in Non-Uniform Fields", J. Phys. D. Appl. Phys., 5,
647-55, 1972.
41. G. Olive, D.L. Pulfrey, L. Young, "The Role of Plasma Negative Ions in Plasma Anodization", Thin Solid Films,
12, 427-32, 1972.
42. D.L. Pulfrey, J.J.H. Reche, "The Determination of Thin Film Optical Properties from Single-Angle Reflectance
Measurements", Appl. Optics, 12, 1577-82, 1973.
43. J.J.H. Reche, D.L. Pulfrey, "A Reflectance Analog Computer for the Determination of Thin Film Optical
Properties", Rev. Sci. Instr., 44, 914-15, 1973.
44. D.L. Pulfrey, F.G.M. Hathorn, L. Young, "The Anodization of Si in an R.F. Plasma", J. Electrochem. Soc., 120,
1529--35, 1973.
45. * D.L. Pulfrey, R.F. McOuat, "Schottky Barrier Solar Cell Calculations", Appl. Phys. Lett., 24, 167-9, 1974.
46. D.L. Pulfrey, J.J.H. Reche, "Preparation and Properties of Plasma-Anodized Silicon Dioxide Films", Solid State
Electron.,17, 627-32, 1974.
47. J.J.H. Reche, D.L. Pulfrey, "Deformation of Aluminum Films During Anodization", J. Electrochem. Soc., 122,
1553-6, 1975.
48. * R.F. McOuat, D.L. Pulfrey, "A Model for Schottky-Barrier Solar Cell Analysis", J. Appl. Phys., 47, 2113--9,
1976.
Page 3/8
49. D.L. Pulfrey, "Barrier Height Enhancement in P-Silicon MIS Solar Cells", IEEE Trans. Electron Dev., ED-23,
587-9, 1976.
50. * D.L. Pulfrey, "A Minority Carrier MIS Solar Cell", Solid-State Electronics, 20, 455--457, 1977.
51. M. Propp, L. Young, D.L. Pulfrey, G. Olive, "Kinetics of Plasma Anodization of Aluminum", J. Electrochem.
Soc., 124, 891-7, 1977.
52. D.L. Pulfrey, "On the Fill-Factor of Solar Cells", Solid-State Electronics, 21, 519-20, 1977.
53. * D.L. Pulfrey, "MIS Solar Cells: A Review", IEEE Trans. Elec. Dev., ED-25, 1308-17, 1978.
54. * N.G. Tarr, D.L. Pulfrey, "An Investigation of Dark Current and Photocurrent Superposition in Solar Cells",
Solid-State Electronics, 22, 265--70, 1979.
55. * N.G. Tarr, D.L. Pulfrey, "New Experimental Evidence of Minority Carrier MIS Solar Cells", Appl. Phys. Lett.,
34, 295--7, 1979.
56. V.F. Drobny, D.L. Pulfrey, "Properties of Reactively-Sputtered Copper Oxide Thin Films", Thin Solid Films, 61,
89--98, 1979.
57. N.G. Tarr, D.L. Pulfrey, P.A. Iles, "MIS Solar Cells with Back Surface Fields", Appl. Phys. Lett., 35, 258-60,
1979.
58. * N.G. Tarr, D.L. Pulfrey, "The Superposition Principle for Homojunction Solar Cells", IEEE Trans. Elec. Dev.,
ED-27, 771-6, 1980.
59. J.K. Kleta, D.L. Pulfrey, "On the Stability of MIS Solar Cells", IEEE Elec. Dev. Lett., EDL-1, 107-9, 1980.
60. N.G. Tarr, P.A. Iles, D.L. Pulfrey, "An Induced Back Surface Field Solar Cell Employing a Negative Barrier MIS
Contact", J. Appl. Phys., 7, 3926-29, 1980.
61. * D.S. Camporese, T.P. Lester, D.L. Pulfrey, "A Fine Line Silicon Shadow Mask for Inversion Layer Solar
Cells", IEEE Elec. Dev. Lett., EDL-2, 61-63, 1981.
62. N.G. Tarr, D.L. Pulfrey, P.A. Iles, "Induced Back-Surface Field Solar Cells on P-Type Silicon Substrates",
Appl. Phys. Lett., 39, 83-85, 1981.
63. N.G. Tarr, D.L. Pulfrey, P.A. Iles, A. Neugroschel, "New Experimental Evidence for Minority Carrier Reflection
at Negative Barrier MIS Contacts", IEEE Trans. Elec. Dev., ED-29, 1018-1021, 1982.
64. * N.G. Tarr, D.L. Pulfrey, D.S. Camporese, "An Analytical Model for MIS Tunnel Junctions", IEEE Trans. Elec.
Dev., ED-30, 1760-70, 1983.
65. T.P. Lester and D.L. Pulfrey, "A New Method Based on the Superposition Principle for the Calculation of the
Two-Dimensional Potential in a Buried-Channel, Charge-Coupled Device", IEEE Trans. Elec. Dev., ED-31,
999-1001, 1984.
66. * T.P. Lester and D.L. Pulfrey, "A New MOS Photon-Counting Sensor Operating in the Above-Breakdown
Regime", IEEE Trans. Elec. Dev., ED-31, 1420-7, 1984.
67. D.S. Camporese and D.L. Pulfrey, "The Effect of Metal Work Function on Current Conduction in MetalInsulator-Semiconductor Tunnel Junctions", J. Appl. Phys., 57, 373-6, 1985.
68. P. Van Halen, D.S. Camporese and D.L. Pulfrey, "The Emitter Injection Efficiency and Effective Surface
Recombination Velocity in Polysilicon Emitter Transistors", Canad. J. Phys., 63, 693--4, 1985.
69. * P. Van Halen, D.L. Pulfrey, "Accurate Short-Series Approximations to Fermi-Dirac Integrals of Order -1/2,
1/2, 1, 3/2, 2, 5/2 3 and 7/2", J. Appl. Phys., 57, 5271-4, 1985.
70. P. Van Halen and D.L. Pulfrey, "High Gain Bipolar Transistors with Polysilicon Tunnel Junction Emitter
Contacts", IEEE Trans. Elec. Dev., ED-32, 1307-13, 1985.
71. S.P. Lee and D.L. Pulfrey, "Modelling the DC Performance of GaAs Bipolar Transistors", Solid-State
Electronics, 29, 713-23, 1986.
72. * K.M. Chu and D.L. Pulfrey, "Design Procedures for Cascode Voltage Switch Logic", IEEE J. Solid State
Circuits, SC-21, 1082-87, 1982.
73. D.L. Pulfrey, P.R.B. Ward and W.G. Dunford, "A Photovoltatic-Powered System for Medium-Head Pumping",
Solar Energy, 38, 255-65, 1987.
74. * K.M. Chu and D.L. Pulfrey, "A Comparison of CMOS Circuit Techniques: Differential Cascode Voltage
Switch Logic Versus Conventional Logic", IEEE J. Solid-State Circuits, SC-22, 528-532, 1987.
75. P.R.B. Ward, W.G. Dunford and D.L. Pulfrey, "Performance of Small Progressive Cavity Pumps with Solar
Power", Canad. J. Civil Engg., 14, 284-287, 1987.
76. K.M. Chu and D.L. Pulfrey, "An Analysis of the DC and Small-Signal AC Performance of the Tunnel Emitter
Transistors (TETRAN)", IEEE Trans. Elec. Dev., ED-35, 188-194, 1988.
77. N. Szeto, D.L. Pulfrey and N.G. Tarr, "Thermal Stressing of Bipolar Transistors with Metal-InsulatorSemiconductor Heterojunction Emitters", Appl. Phys. Lett., 52, 664-666, 1988.
Page 4/8
78. * K.M. Chu and D.L. Pulfrey, "An Improved Analytic Model of the MIS Tunnel Junction", IEEE Trans. Elec.
Dev., ED-35, 1656-1663, 1988.
79. * H. Zhou and D.L. Pulfrey, "A Criterion for Stationary Domain Formation in GaAs MESFETs", IEEE Trans.
Elec. Dev., ED-36, 872-878, 1989.
80. B.P.C. Tsou, K.M. Chu and D.L. Pulfrey, "Series Resistance Calculations for Polysilicon Tunnel Junction
Emitter Transistors", Can. J. Phys., 67, 218-220, 1989.
81. * S.C.M. Ho and D.L. Pulfrey, "The Effect of Base Grading on the Gain and High Frequency Performance of
AlGaAs/GaAs HBTs", IEEE Trans. Elec. Dev., ED-36, 2173-2182, 1990.
82. S.P. Day, H. Zhou and D.L. Pulfrey, "The Kronig-Penney Model: May It Live On", IEEE Trans. Education, 33,
355-358, 1990.
83. A.P. Laser, K.M. Chu, D.L. Pulfrey, C.M. Maritan and N.G. Tarr, "An Investigation of PNP Polysilicon Emitter
Transistors", Solid-State Electronics, 33, 355-358, 1990.
84. * H. Zhou, D.L. Pulfrey and M.T. Yedlin, "A Phenomenological Approach to the Estimation of Transit Times in
GaAs HBTs", IEEE Trans. Elec. Dev., ED-37, 2113--2120, 1990.
85. * A.P. Laser and D.L. Pulfrey, "Reconciliation of Methods for Estimating fmax for Microwave Heterojunction
Transistors", IEEE Trans. Elec. Dev., ED-38, 1685-1692, 1991.
86. O.S. Ang and D.L. Pulfrey, "The Cut-Off Frequency of Base-Graded and Junction-Graded AlGaAs DHBTs",
Solid-State Electronics, 34,1325--1328,1991.
87. * H. Zhou and D.L. Pulfrey, "Computation of Transit and Signal Delay Times for the Collector Depletion Region
of Gats-Based HBTs", Solid-State Electronics, 35,113--115,1992.
88. V.A. Samuilov, E.A. Bondarionok, D. Shulman and D.L. Pulfrey, "Memory switching effects in a-Si/c-Si
heterojunction bipolar structures", IEEE Electron Dev. Lett., 13, 396--398, 1992.
89. * A.R. St. Denis, D.L. Pulfrey and A. Marty, "Reciprocity in heterojunction bipolar transistors", Solid-State
Electronics, 35, 1633--1637, 1992.
90. H. Zhou and D.L. Pulfrey, "A new method for estimating the electron concentration in the 2--dimensional
electron gas in MODFETs", Solid-State Electronics, 35. 1779--1782, 1992.
91. * H. Zhou and D.L. Pulfrey, "Bipolar effects on the signal delay time in HBTs at high currents", Electron Dev.,
40, 44--48, 1993.
92. * D. L. Pulfrey and S. Searles, "Electron quasi-Fermi level splitting at the base-emitter junction of AlGaAs
HBTs", IEEE Trans. Elec. Dev., 40, 1183--1185, 1993.
93. A. Marty, T. Camps, J. Tasselli, D.L. Pulfrey and J.P. Bailbe, "A self-consistent dc-ac two-dimensional
electrothermal model for GaAlAs/GaAs microwave power HBTs", IEEE Trans. Elec. Dev., 40, 1202--1210,
1993.
94. Q.Z. Liu, D.L. Pulfrey and M.K. Jackson, "Analysis of pin -HBT optical receiver front-ends", IEEE Trans. Elec.
Dev., 40, p. 2204--2210, 1993.
95. * S. Searles and D.L. Pulfrey, "Analysis of space-charge-region recombination in HBTs", IEEE Trans. Elec.
Dev., 41, 476--483, 1994.
96. * J.J.X. Feng, D.L. Pulfrey, J. Stitch and R. Surridge, "A physics-based HBT SPICE model for large-signal
applications", IEEE Trans. Elec. Dev., 42, 8--14, 1995.
97. B. Ghodsian, D.L. Pulfrey, Z. Abid and S.P. McAlister, "On the design of composite-collector HBT's", SolidState Electronics, 38, 1275--1278,1995.
98. * A.R. St.Denis and D.L. Pulfrey, "An analytical expression for the current in short-base transistors", SolidState Electronics, 38, 1431--1436, 1995.
99. S.S. Winterton, S. Searles, C.J. Peters, N.G. Tarr and D.L. Pulfrey, "Distribution of base dopant for transit time
minimization in a bipolar transistor", IEEE Trans. Elec. Dev., 43, 170--172, 1995.
100.
* M. Vaidyanathan and D.L. Pulfrey, " An appraisal of the one-flux method for treating carrier transport in
modern semiconductor devices", Solid-State Electronics, 39, 827--832, 1996.
101.
* S. Searles and D.L. Pulfrey, "The influence of a transverse-effective-mass difference on the current at an
abrupt heterojunction", J. Appl. Phys., 79, 4203--4210, 1996.
102. * B.P.C. Tsou and D.L. Pulfrey, "A versatile SPICE model for quantum-well lasers", IEEE Trans. Quantum
Electronics, 33, 246--254, 1997.
103. M. Vaidyanathan and D.L. Pulfrey, "Effects of quasi-ballistic base transport on the high-frequency
characteristics of bipolar transistors", IEEE Trans. Elec. Dev., 44, 618--626, 1997.
104. * S. Searles, D.L. Pulfrey and T.C. Kleckner, “Analytical expressions for the tunnel current at abrupt
semiconductor-semiconductor heterojunctions”, IEEE Trans. Elec. Dev., 44, 1851-1856, 1997.
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105. B.P.C. Tsou and D.L. Pulfrey, “The influence of Coulomb enhancement on the modulation properties of
quantum-well lasers”, IEEE J. Quantum Electronics, 34, 318-324, 1998.
106. D.L Pulfrey and B.D. Nener, “Suggestions for the development of GaN-based photodiodes”, Solid-State
Electronics, 42, 1731-1736, 1998.
107. * A.R. St.Denis and D.L. Pulfrey, “Quasi-ballistic transport in GaAs-based hetero- and homo-junction bipolar
transistors”, J. Appl. Phys., 84, 4959-4965, 1998.
108. * M. Vaidyanathan and D.L. Pulfrey, “Extrapolated fmax of heterojunction bipolar transistors”, IEEE Trans.
Elec. Dev., 46, 301-309, 1999.
109. D.L. Pulfrey, J.J. Kuek, B.D. Nener, G. Parish, U.K. Mishra and E.J. Tarsa, “Towards an AlGaN, solar-blind,
p-I-n photodetector”, Physica Status Solidi A, 176, 169-173, 1999.
(b)
Conference Proceedings (inverse chronological order to 2000: chronological order 1975-1999)
1. G. Abadir, K. Walus, R.F.B. Turner, and D.L. Pulfrey, “Effect of Single-Biomolecule Adsorption on the
Electrical Properties of Short Carbon Nanotubes” 8th IEEE Conference on Nanotechnology, 230-232, 2008.
2. * D.L. Pulfrey, “Critique of high-frequency performance of carbon nanotube FETS”, Proc.37th IEEE
ESSDERC, 234-238 , 2007. INVITED
3. *D.L. Pulfrey, “Assessment of carbon nanotube FETs for high frequency performance,” Proc. 64th IEEE
Device Research Conference, pp. 167-169, 2006.
4. D.L. Pulfrey, D.L. John and L.C. Castro, “Carbon Nanotube FETs: AC Performance Capabilities” Proc. 13th.
Intl. Wkshop. Physics Semicond. Dev., Delhi, 7-13, 2005.
5. * D.L. John, L.C. Castro, P.J.S. Pereira and D.L. Pulfrey, "A Schrödinger-Poisson Solver for Modeling Carbon
NanotubeFETs," Technical Proceedings of the 2004 Nanotechnology Conference and Trade Show, 3, 65-68,
2004.
6. * L.C. Castro, D.L. John and D.L. Pulfrey, "Carbon Nanotube Transistors: An Evaluation", Proc. SPIE Conf.
Device and Process technologies for MEMS, Microelectronics, MEMS and Photonics III, 5276, 1-10, 2004.
7. * L.C. Castro, D.L. John and D.L. Pulfrey, "Towards a Compact Model for Nanotube FETs", Proc. IEEE
COMMAD-2002, Sydney, Australia, 303-306, 2003.
8. A.R. St. Denis and D.L. Pulfrey, "Kinetic Approach to Quasi-Ballistic Field-Dependent Electron Transport",
Proc. Inst. Phys. Int. Conf. Semiconductors, Conf. Series 171, CD vol. D36, pp.8, 2002.
9. J.J. Kuek, D.L. Pulfrey, B.D. Nener, J.M Dell, G. Parish and U.K. Mishra, “Effects of polarization on solar-blind
AlGaN UV photodiodes”, Proc. IEEE COMMAD-2000, Melbourne, Australia, to appear.
10. J.J. Kuek, D.L. Pulfrey, B.D. Nener, J.M Dell, G. Parish and U.K. Mishra, “Effects of spontaneous and
piezoelectric polarization on the photoresponsivity of Ga- and N-faced AlGaN UV photodiodes”, 4th. Pacific
Rim Conf. On Lasers and Electro-optics, CLEO/Pacific Rim 2001, 1, I_532-I_533, 2001.
11. J.J. Kuek, D.L. Pulfrey, B.D. Nener and J.M. Dell, “Comparison of p-I-n and n-I-p AlGaN UV photodiodes for
solar-blind performance”, Proc. Semiconducting and Insulating Materials Conference, SIMC-XI Intl., 333-336,
2000.
12. * R.F. McOuat, D.L. Pulfrey, "A Model for the Analysis of Silicon Schottky Barrier Solar Cells", Proc. 11th IEEE
Photovoltaic Specialists Conf., 371--5, IEEE: N.Y., 1975.
13. B.G. Russell, D.L. Pulfrey, "The Structure and Schottky Barrier Diode Properties of Poly-crystalline GaAs
Films Grown by the Close Spaced Vapour Transport Technique on Mo Substrates:, Proc. 12th IEEE
Photovoltaic Specialists Conf., 962--6, IEEE: N.Y., 1977.
14. V.F. Drobny, D.L. Pulfrey, "The Photovoltatic Properties of Thin Copper Oxide Films", Proc. 13th IEEE
Photovoltatic Specialists Conf., 180--3,1978.
15. N.G. Tarr, D.L. Pulfrey, "Minority Carrier MIS Solar Cells", Proc. 2nd European Photovoltaic Solar Energy
Conf., 58-64, D. Reidel: Boston, 1979.
16. N.G. Tarr, D.L. Pulfrey, P.A. Iles, "Diffused Junction Solar Cells with MIS Back Surface Fields and MIS Solar
Cells with Diffused Back Surface Fields", Proc. 14th IEEE Photovoltaic Specialists Conf., 1345-9, IEEE Press:
N.Y., 1980.
17. N.G. Tarr, D.L. Pulfrey, P.A. Iles, "Induced Back Surface Field and MISIM Solar Cells on pSi Substrates",
Proc. 15th IEEE Photovoltaic Specialists Conf., 1409-11, IEEE Press: N.Y., 1981.
18. * D.S. Camporese, T.P. Lester, D.L. Pulfrey, "Development of Fine Line Silicon Shadow Masks for the
Deposition of Solar Cell Grids", ibid., 527-529.
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19. D.S. Camporese, N.G. Tarr, D.L. Pulfrey, "A Non-Adulterating Method for the Measurement of Minority Carrier
Diffusion Length in Silicon", Proc. 16th IEEE Photovoltaic Specialists Conf., 1249-51, IEEE Press: N.Y., 1982.
20. D.L. Pulfrey, W. Snyder, "An Expandable, Fully-Asynchronous, 4K Static CMOS RAM for Cell Library Use",
Proc. 1983 Canadian Conf. on VLSI, 50-53, 1983.
21. B.W. Jinks, W. Snyder and D.L. Pulfrey, "The Design and Testing of an Algorithmic ROM Macrocell", Proc.
1984 Canadian Conf. on VLSI, 168-171, 1984.
22. B.W. Jinks, W.S. Snyder and D.L. Pulfrey, "The Algorithmic Generation of ROM Macrocells", Proc. 2nd Int.
Symp. on VLSI Technology, Systems and Applications, Taiwan, pp. 190--3, 1985.
23. J.K. Poon, D.L. Pulfrey and P.D. Lawrence, "Arithmetic Processor Chip for Robot Control", ibid., pp. 337-341.
24. P.R.B. Ward, W.G. Dunford and D.L. Pulfrey, "Performance of Small Pumps with Solar Power", Proc. Ann.
Conf. Can. Soc. for Civil Eng., pp. 459-77, 1985.
25. D.L. Pulfrey, P.R.B. Ward and W.G. Dunford, "A Photovoltatic-Powered System for Medium Head Pumping",
Proc. 18th IEEE Photovoltaic Specialist Conf., 1985, pp. 1637-1642.
26. Q.Z. Liu and D.L. Pulfrey, "Noise in integrated optical receiver front-ends employing InP/InGaAs HBTs", Proc.
5th Int. Conf. on InP and Related Materials, pp. 417--419, 1993.
27. * D.L. Pulfrey, "Device models for HBT circuit simulation", Proc. 7th Int. Workshop on Physics of
Semiconductor Devices, K. Lal ed., New Delhi: Narosa Publishing, pp. 10--17, 1993.
28. S. Searles and D.L. Pulfrey, "Tunneling and its inclusion in analytical models for abrupt HBTs", Proc. 3rd Int.
Workshop on Computational Electronics, Portland, Oregon, 123--126, 1994.
29. * S. Searles, A.St.Denis and D.L. Pulfrey, "Distortion of the electron distribution by tunneling at an abrupt
heterojunction", Proc. NATO Advanced Workshop on the Future of Microelectronics, Ed.S. Luryi, to appear
1995.
30. * D.L. Pulfrey, A.R. St.Denis and M. Vaidyanathan, “Compact models for high-frequency bipolar transistors”,
Proc. IEEE COMMAD-98, Perth, W. Australia, 81-85, 1999.
31. J.J. Kuek, M.A. Wong, T.A. Fisher, B.D. Nener and D.L. Pulfrey, “Modeling AlGaN heterojunction solar-blind
photodetectors”, Proc. IEEE COMMAD-98, Perth, W. Australia, 407-410, 1999.
(c)
Other
2.
NON-REFEREED PUBLICATIONS
(a)
Journals
(b)
Conference Proceedings
(c)
Other
1. E.M. Pulfrey and D.L. Pulfrey, "Moving Mountains", Doctor’s Review, 21(9), 58-62, 2003.
2. BOOKS – AUTHORED
3.
1. **D.L. Pulfrey, “Understanding modern transistors and diodes”, 368 pages, Cambridge University Press,
UK, to appear, January 2010.
http://www.cambridge.org/us/catalogue/catalogue.asp?isbn=9780521514606
2. *D.L. Pulfrey and N.G. Tarr, “Introduction to Microelectronic Devices”, Prentice Hall: New Jersey, 432
pages, 1989.
3. *D.L. Pulfrey, “Photovoltaic Power Generation”, Van Nostrand Reinhold Press: N.Y., 218 pages, 1978.
4.
BOOKS - EDITED
5.
CHAPTERS IN BOOKS
Page 7/8
1. * D.L. Pulfrey, “Modeling high-performance HBTs”, High-speed Semiconductor Devices, P.Roblin and
H.Rohdin, Eds., New York: Cambridge University Press, Ch. 18, 2002.
2. * D.L. Pulfrey, “Heterojunction Bipolar Transistor”, Wiley Encyclopedia of Electrical and Elecronics
Engineering, J.G. Webster, Ed., New York: John Wiley & Sons, Inc., 8, 690-706, 1999.
3. * C.J. Dell-Oca, D.L. Pulfrey, L. Young, "Anodic Oxide Films", “Physics of Thin Films, F. Haas and R. Thun,
Eds., New York: Academic Press, 6, 1-79, 1971.
6.
PATENTS
 D.D. Shulman, D.L. Pulfrey, V. Samuilov, E. Bondarionok, V. Drasnitski, N. Poklouski and V. Stelmakh,
“Inverting heterojunction bipolar device having undoped amorphous silicon layer”, US Patent
#5,285,083, issued Feb. 8, 1994.
7.
SPECIAL COPYRIGHTS
8.
ARTISTIC WORKS, PERFORMANCES, DESIGNS
9.
OTHER WORKS
Technical Reports
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
D.L. Pulfrey, L. Young, "Plasma Anodization", USAF Tech. Rpt., AFAL-TR-69-318, pp. 20, 1969.
D.L. Pulfrey, L. Young, "Plasma Anodization", USAF Tech. Rpt., AFAL-TR-70-328, pp. 45, 1971.
D.L. Pulfrey, L. Young, G. Olive, "Plasma Anodization", USAF Tech. Rpt., AFAL-TR-72-362, pp. 42, 1972.
D.L. Pulfrey, "Development of Surface Junction Solar Cells", Tech. Rpt. to Ntl. Semiconductors Ltd., pp. 40,
1980.
D.L. Pulfrey, "MISIL Solar Cells", Tech. Rpt. to U. of Washington, pp. 70, 1981.
D.L. Pulfrey, "Theory and Measurement of Arbitrary Doping Profiles in Silicon-on-Insulator Structures",
Plessey Tech. Rpt., No. to be assigned, pp. 60, 1982.
D.L. Pulfrey, "PCLM --- A Process Control Monitor for MPR", Microtel Pacific Research Tech. Rpt., pp. 14,
1983.
D.L. Pulfrey, "An Expandable, Fully-Asynchronous, CMOS Static RAM for Cell Library Use", Microtel Pacific
Research Tech. Rpt., pp. 18, 1983.
P.R.B. Ward, D.L. Pulfrey and W.G. Dunford, "Photovoltaic-Powered Systems for Medium Head Pumping",
National Research Council of Canada, Rept. 01SX.31926-3--3030, pp. 50, 1985.
D.L. Pulfrey and J. Hacker, "A Low Cost, Microprocessor-Based Battery Change Controller", Energy, Mines
and Resources, Technical Rpt. 23216-6-6109/01-SZ, pp. 52, 1987.
D.L. Pulfrey, "Development of Models for Heterojunction Bipolar Transistors", BNR, Ottawa, pp. 44, 1990.
D.L. Pulfrey, "InP Quaternary-Based Monolithic Integration of Lasers and Bipolar Transistors", NRC, Ottawa,
pp. 32, 1991.
D.L. Pulfrey, "Development of Models for Heterojunction Biopolar Transistors, Part II", BNR, Ottawa, pp. 28,
1991.
D.L. Pulfrey, "InP Quaternary-Based Monolithic Integration of Lasers and Bipolar Transistors", NRC, Ottawa,
pp. 32, 1992, 1993, 1994.
D.L. Pulfrey, "Development of Models for Heterojunction Biopolar Transistors, Part II", BNR, Ottawa, pp. 28,
1992, 1993, 1994.
D.L. Pulfrey and A.R. St.Denis, “Heterojunction Bipolar Transistor Modeling”, Nortel, Ottawa, 1995, 1996,
1997, 1998, 1999.
D.L. Pulfrey, "Towards a Switching Metric for HBTs", Nortel Networks, Ottawa, October 13, 2000.
D.L. Pulfrey, "Towards a Switching Metric for HBTs", Nortel Networks, Ottawa, March 26, 2002.
Page 8/8
10.
WORK SUBMITTED (including publisher and date of submission)
11.
WORK IN PROGRESS (including degree of completion)