Epitaxy : an enabling technology for confined optical
nanostructures
F.Laruelle
3S Photonics
Route de Villejust
F-91625 NOZAY France
Email : flaruelle@3sphotonics.com
Website : www.3sphotonics.com
Epitaxy of III-V semiconductors together with nanolithography and dry etching is
one of the enabling technology for advanced confined optical nanostructures. We will
focus on the In-Ga-Al / As-P material system which is the most widely spread for practical
applications.
In this lecture, we review first how modern vapor phase technologies such as
molecular beam epitaxy or metal organic vapor phase epitaxy are linked to liquid phase
epitaxy through well established thermodynamical laws. Then, we will show how interfaces
between element III or element V are understood and review low-dimensional structures
grown directly by epitaxy. We will conclude our lecture with overgrowth on non planar
surfaces which is a key approach for monolithic integration of optical functions on the
same chip.
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