Curriculum Vitae
John E. Bowers
Fred Kavli Chair of Nanotechnology
Department of ECE
University of California, Santa Barbara
Santa Barbara, California 93106-9560
Phone: (805) 893-8447
Fax:
(805) 893-7990
email: bowers@ece.ucsb.edu
web: http://www.ece.ucsb.edu/Faculty/Bowers
FORMAL EDUCATION
Ph.D. (Applied Physics), Stanford University, 1981. Thesis: Broadband
Sezawa Wave Storage Correlators and Convolvers
Monolithic
M. S. (Applied Physics), Stanford University, 1978.
B. S. (Physics), University of Minnesota, 1976.
PROFESSIONAL EXPERIENCE
2009-present Director, Center for Materials for Energy Efficient Applications
2008-present Director, Energy Efficiency Institute
1987-present Professor, Department of Electrical and Computer Engineering, University of
California, Santa Barbara.
2004-present Cofounder and Member, Technology Management Program
1999-2008
CTO and cofounder, Calient Networks.
1996-2004
Director, Multidisciplinary Optical Switching Technology Center (MOST)
1998-2001
Executive Director and Cofounder, Center for Entrepreneurship and Engineering
Management, UCSB.
1996-1998
CEO and cofounder, Terabit Technology (acquired by Ciena).
1992-1999
Optics Thrust Leader, Center for Quantized Electronic Structures, an NSF Science
and Technology Center
1990-1993
Associate Director, Optoelectronics Technology Center.
1982-1987
AT&T Bell Laboratories. Member of Technical Staff (MTS)
Investigated high speed optoelectronic devices, and demonstrated the largest
bandwidth of any laser in the world. Invented and demonstrated numerous novel
lasers, photodetectors, and other optical device structures. Investigated fiber optic
digital transmission at bit rates of 16 Gbit/s and analog microwave signal
transmission at frequencies to 20 GHz.
1981-1982
Ginzton Laboratory, Stanford University. Research Associate.
Invented and demonstrated several high-frequency signal processing devices using
single-mode fibers, including tapped delays lines, optical buffer memories and
filters. Invented and demonstrated a novel fiber-optic SAW sensor which was
mechanically stable and very sensitive.
1976-1978
1979-1981
Ginzton Laboratory, Stanford University. Research Assistant.
Investigated interactions of semiconductors and piezoelectrics using Sezawa and
Rayleigh Surface Acoustic Waves (SAW). Fabricated broadband SAW signal
processing devices including Sezawa wave storage convolvers and correlators and
demonstrated them in several applications, including adaptive filtering.
June 1978June 1979
Honeywell Corporate Materials Science Center. Scientist.
Developed large area, multi-layer LPE growth of the II-VI semiconductor
HgxCd1-xTe.
CONSULTING
Calient Networks
Aerius Photonics
Aurrion
AWARDS AND HONORS
 2009 Kavli Chair for Nanotechnology, (2009).
 OSA 2009 Nick Holonyak, Jr., Award, (2009).
 IEEE Transactions on Components and Packaging Technologies Best Paper of 2006
Award, (2007).
 EETimes ACE Award for “Most Promising New Technology,” (2007).
 Micro-optics Conference Award for "In recognition of significant contributions to the
development of semiconductor-based high-speed lasers, VCSELs, photonic switching
devices, and integrated optics." (2007).
 Discover Magazine list of top 100 achievments in (2006).
 PC World Technical Excellence Award with for Best Semiconductor Technology, (2006)
 National Academy of Engineering, (2005).
 Fellow of the Optical Society of America, (2002).
 Entrepreneur of the Year Award, South Coast Business and Technology Group,(2001).
 Fellow of the American Physical Society (1996)
 IEEE LEOS William Streifer Award (1996)
 IEEE LEOS IPRM Best Paper Award (1995)
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Fellow of IEEE (1994).
LEOS Distinguished Lecturer (1994).
NSF Presidential Young Investigator (1988).
NSF Fellowship (1976).
Thomas F. Andrew Award for Undergraduate Research from Sigma Xi (1976).
PROFESSIONAL ACTIVITIES
2009
Microoptics Conference Program Committee
2009
Microwave Photonics Conference Program Committee
2009
International Symposium on Compound Semiconductors Program Committee
2008
2008
Asia Optoelectronics Exhibition and Conference (AOE 2008) Program Chair
Microoptics Conference Program Committee
2008
OIDA Technology Advisory Board
2008
IEEE Photonics in Switching Technical Program Committee
2008
OSA/IEEE CLEO Technical Program Committee
2008
International Microwave Photonics Conference Technical Program Committee
(Gold Coast, Australia).
2007
Micro-Optics Technical Program committee
2007
IEEE Photonics in Switching Technical Program Committee
2006
Technical Program Committee, 2006 International conference on high-speed and
broadband network (ICHBNT’06) April 3-4, 2006
2006
Program Committee OSA Topical Meeting on Coherent Optical Technologies &
Applications (COTA), Whistler, British Columbia, June 28-30, 2006.
2005-present Program Committee, IEEE LEOS International Semiconductor Laser Conference
2005-present Program Committee, Conference on the Optical Internet (COIN)
2006
International advisory committee of the International Conference on High speed
and broadband networks (ICHBNT)
2004
Scientific Advisory Committee to COMMAD
2003-2004
Assoc. Editor, IEEE LEOS Journal of Quantum Electronics
2003
Served on the Optical Society of America John Tyndall Award Committee.
1999
General Chair, Ultrafast Electronic and Optoelectronics Conference.
1998-present Steering Committee Member, Int. Sem Laser Conference
1998
IEEE LEOS Liaison, Microwave Optics Conference, 1898.
1988-present Program Committee Member, LEOS Semiconductor Laser Conference.
1998
General Co-Chair (with T. Ikegami) of the 25th International Symp. on Compound
Semiconductors.
1998
Program Committee
Semiconductors
1988-1997
OFC Program Committee.
1997
Vice President for conferences, IEEE LEOS.
1997
Subcommittee Chair, Optoelectronic Devices, OFC Program Committee.
1997
Program Chair, Ultrafast Electronics and Optoelectronics Conference at the OSA
‘97 Spring Topical Meetings.
1997
Chair, Steering Committee of the Conference on Lasers and Electro-optics
(CLEO).
1995-1997
Elected member of the Board of Governors of the IEEE Lasers and Electro-optics
Society (LEOS).
1994-1996
Meetings Chairman, IEEE LEOS.
1994-1997
Member, Steering Committee of the Conference on Lasers and Electro-optics
(CLEO).
1996
Co-Chair (with David Miller) of the Conference on Lasers and Electro-optics
(CLEO).
1994-1996
Chair, Steering Committee of the LEOS Summer Topical Meetings
1994-1996
Chair, Steering Committee of the IEEE InP and Related Materials Conference
(IPRM).
of
the
25th
International
Symp.
on
Compound
1995
Co-Chair (with Atac Imamoglu) of Joint Symposium on Semiconductor Quantum
Optics, OSA/ILS Annual Meeting 1995.
1995
CLEO-QELS Program Committee Liaison
1994
Program Co-Chair (with David Miller), CLEO.
1994
Conference Chair of the IEEE InP and Related Materials Conference (IPRM)
1994
Short Course Chair and Program Committee Member for the 1994 IEEE
International Semiconductor Laser Conference
1994
Program Committee Member, Ultrafast Electronics and Optics Conference
1988-1994
Member, IEEE LEOS Technical Subcommittee on Semiconductor Lasers
1988-1994
Program Committee Member, Program Committee of CLEO
1993
Vice Chair, InP and Related Materials Conference.
1992-1993
Semiconductor Laser Subcommittee Chair for CLEO.
1993
Program Committee Member, LEOS Annual Meeting
1990, 1993
Program Committee Member, Picosecond Optics and Electronics Conference
1991-1992
Chair, IEEE LEOS Technical Subcommittee on Semiconductor Lasers
1992
Americas Chair for the 1992 IEEE International Semiconductor Laser Conference
1992
Program Co-Chair (with U. Mishra), SPIE Ultrafast Optoelectronics and
Electronics Meeting, Somerset.
1987-1992
Advisory Board, International Journal of Optoelectronics.
1990
Organizer of the 1990 International Workshop on Semiconductor Lasers, San
Francisco.
1990
Local Arrangements Chair, Device Research Conference.
1990
Organizer, Panel Discussion on “High Speed Modulation” at the International
Integrated Optics and Optoelectronics Conference.
1990
Program Committee Member, Device Research Conference
1989
Guest Editor of the Special Issue of the Journal of Quantum Electronics on
Semiconductor Lasers, June 1989.
1989
Organizing Committee, First Workshop on Quantum Well Optical Device
Physics, Kobe, Japan.
1988
Organizer of the Symposium on Lasers for Coherent Detection Systems at the
Optical Society of America Annual Meeting, Santa Clara, CA.
UNIVERSITY ACTIVITIES
2008-present Director, Institute for Energy Efficiency.
2008-present UCSB Sustainability Committee
Present
Various department, college and ad hoc committees
2005-2008
Chair, ECE Long Range Planning Committee
2004-2009
Steering Committee Member, University of California Industry-University.
Cooperative Research Program
1998-2004
Board of Directors, Center for Entrepreneurship and Engineering Management,
UCSB.
2002-2003
Chair, Technology and Entrepreneurship Search Committee
1997-2000
UCSB representative on the President’s Industry-University Cooperative
Research Initiative
1994-2000
UCSB representative on Oversight Committee of the Office of Technology
Transfer
1995-1996
UCSB Graduate Council
1994-1995
Member, Conflict of Interest Committee
1994-1995
Member, Committee to Recruit Excellent Students (CREST)
1994-1995
Member, Laser Safety Committee
1994-1995
Member, Research Review Committee
PERSONAL INFORMATION
Citizenship: United States
Two children, ages 25 and 28.
Interests include flying, sailing and golf.
DOCTORAL STUDENTS
1.
Radhakrishnan Nagarajan, “Carrier Transport Effects in High Speed Quantum Well
Lasers”, July, 1992.
2.
Dennis Derickson, “Multi-Section Mode Locked Semiconductor Lasers”, July, 1992.
3.
Yih-Guei Wey, “High Speed Double Heterostructure GaInAs/InP p-i-n Photodiodes”,
February, 1993.
4.
Roger Helkey, “Subpicosecond Pulse Generation Using Mode Locked Semiconductor
Laser Diodes”, July, 1993.
5.
Wenbin Jiang, “Mode Locked Vertical Cavity Semiconductor Lasers”, November, 1993.
6.
John Wasserbauer, “Design and Fabrication of High Speed Long Wavelength
Semiconductor Lasers”, February, 1994.
7.
James Dudley, “Wafer Fused Vertical Cavity Lasers”, August, 1994.
8.
Judy Karin, “Ultrafast Dynamics in Semiconductor Laser Structures”, September, 1994.
9.
Alan Mar, “High Power Mode Locked Semiconductor Lasers”, October, 1994.
10.
Kirk Giboney, “Travelling-Wave Photodetectors”, August 1995.
11.
Dubravko Babic, “Double-Fused Long Wavelength Vertical-Cavity Lasers,” August, 1995.
12.
Pat Corvini, “Current Injection in Semi-Insulating Indium Phosphide,” November 1995.
13.
Rich Mirin, “Alternating Molecular Beam Epitaxy and Characterization of InGaAs
Quantum Dots and Quantum Dot Lasers,” October 1996.
14.
Gary Wang, “Carrier Dynamics in Self-Organized Quantum Dots,” July 1997.
15.
Rajeev Ram, “Microcavity Lasers: Coherent Matter and Light,” December 1996.
16.
Archie Holmes, “1.55 Micron In-Plane Lasers Using Wafer Fused Cladding Layers,” June
1997.
17.
Daniel Tauber, “Design and Performance of Semiconductor Microstrip Lasers,” March
1998.
18.
Near Margalit, “High-Temperature Long-Wavelength Vertical-Cavity Lasers,” June 1998.
19.
Aaron Hawkins, “Silicon-Indium-Gallium-Arsenide Avalanche Photodetectors,” December
1998.
20.
Yi-Jen Chiu, “Sub-Terahertz Travelling-Wave Low-Temperature Grown-GaAs P-I-N
Photodetector,” May 1999.
21.
Sheng Zhang, “Travelling-Wave Electroabsorption Modulators,” July 1999.
22.
Alexis Black, “Fused Long-Wavelength Vertical-Cavity Lasers,” March, 2000.
23.
Bin Liu, “Three-Dimensional Photonic Devices and Circuits,” March 2000.
24.
Volkan Kaman, “High-Speed Optical Systems Based on Electroabsorption Modulators,”
December, 2000.
25.
Kehl Sink, “Cleaved-Facet Group-III Nitride Lasers,” December, 2000.
26.
Chris LaBounty, “Heterostructure Integrated Thermionic Cooling of Optoelectronic
Devices,” December, 2001.
27.
Adil Karim, “Wafer Bonded 1.55 micron Vertical Cavity Laser Arrays for Wavelength
Division Multiplexing,” December, 2001.
28.
Thomas Liljeberg, “Indium-Phosphide Based Narrow-Band Optical Filters and Add-Drop
Multiplexers,” June, 2002.
29.
E. Staffan Björlin, “Long-Wavelength Vertical-Cavity Semiconductor Optical Amplifiers,”
December, 2002.
30.
Maura Raburn, “Three-Dimensional Wafer Bonded Indium Phosphide Photonic
Waveguide Devices,” June 2003.
31.
Jonathan Geske, “Ultra-Wideband WDM VCSEL Arrays by Lateral Heterogeneous
Integration,” May 2004.
32.
Daniel Lasaosa, “Traveling-wave Amplifier-Photodetectors,” Dec 2004.
33.
Yae Okuno, “Polarization control of long-wavelength vertical cavity surface emitting laser
(VCSEL) fabricated by orientation-mismatched wafer bonding,” Sept 2004.
34.
Garrett Cole, “MEMS-tunable vertical-cavity SOAs,” Sept. 2005.
35.
Hsu Feng Chou, “Optical Signal Processing Using Traveling-Wave Electroabsorption
Modulators,” Nov. 2005.
36.
Manish Mehta, “High Power, High Bandwidth Long-Wavelength Vertical-Cavity SurfaceEmitting Lasers,” Jan. 2006.
37.
Kian Giap Gan, “Carrier Dynamics in Nitride Semiconductors,” December 2006.
38.
Alex Fang, “Silicon Evanescent Lasers,” March 2008.
39.
Hyundai Park, “Silicon Evanescent Devices for Optical Buffers and Networks,” March
2008.
40.
Emily Burmeister, “Integrated Optical Buffers for Packet-Switched Networks” June, 2008.
41.
Brian Koch, “Optical Signal Processing in Photonic Integrated Circuits with Mode Locked
Lasers and Optoelectronic Cavities,” October, 2008.
PATENTS
1.
J. E. Bowers and J. L. Schmit, “Hg Containment for Liquid Phase Growth of HgCdTe
from Te-rich Solution,” patent number 4,317,689, March 2, 1982.
2.
J. E. Bowers and J. L. Schmit, “Hg Containment for Liquid Phase Growth of HgCdTe
from Te-rich solution - Apparatus,” patent number 4,366,771, January 4, 1983.
3.
G. S. Kino, D. Behar, J. E. Bowers, H. Olaisen, “Adaptive Filter Using an ASW Storage
Correlator,” patent number 4,458,328, July 3, 1984.
4.
S. A. Newton, J. E. Bowers, H. J. Shaw, “Dual Coupler Fiber Optic Recirculating
Memory,” patent number 4,479,701, Oct. 30, 1984.
5.
H. J. Shaw, S. A. Newton, J. E. Bowers and K. P. Jackson, “Fiber Optic Word
Generators,” patent number 4,495,656, Jan. 22, 1985.
6.
S. A. Newton and J. E. Bowers, “Fiber Optic Data Distributor,” patent number 4,511,207,
April 16, 1985.
7.
S. A. Newton and J. E. Bowers, “Tapped Optical Fiber Delay Line,” patent number
4,558,920, Dec. 17, 1985.
8.
M. Tur, J. W. Goodman, H. J. Shaw, B. Moslehi, and J. E. Bowers. “Optical Guided
Wave Signal Processor for Matrix-Vector Multiplication and Filtering,” patent number
4,588,255, May 13, 1986.
9.
J. E. Bowers and G. S. Kino, “Fiber Optic Sensor for Detecting Very Small
Displacements of a Surface,” patent number 4,572,949, February 25,1986.
10.
J. E. Bowers, “High speed Intensity Modulated Light Source, patent number 4,638,483,
January 20, 1987.
11.
G. S. Kino and J. E. Bowers, “Improved Fiber Optic Sensor for Detecting Very Small
Displacements of a Surface,” patent number 4,652,744, Mar. 24, 1987.
12.
J. E. Bowers, H. J. Shaw and S. A. Newton, “A Continuously Variable Fiber Optic Delay
Line,” patent number 4,676,585, June 30, 1987.
13.
J. E. Bowers and H. J. “Fiber Optic Switch and Discretely Variable Delay Line,” patent
number 4,723,827, Feb. 9, 1988.
14.
S. A. Newton and J. E. Bowers, “Tapped optical fiber delay line,” patent number
4,558,920, December 17, 1985.
15.
J. E. Bowers, A. Mar, R. Helkey, J. R. Karin, “Generation of High Power Optical Pulses
using Flared Mode Locked Semiconductor Lasers and Optical Amplifiers,” patent
number 5,799,024, August 25, 1998.
16.
J. E. Bowers, A. Mar, R. Helkey, J. R. Karin, “Generation of High Power Optical Pulses
using Flared Mode Locked Semiconductor Lasers and Optical Amplifiers,” patent
number 5,802,084, August 25, 1998
17.
J. E. Bowers, S. DenBaars, and K. Sink, “A Method for Making Cleaved Facets for
Lasers Fabricated with GaN and other Non-cubic Materials, Reduced Resistance
Contacts and Increased P-Type Dopant Activation in P-Type Metallic Nitride,” patent
number 5,985,687, November 16, 1999.
18.
J. E. Bowers and A. Shakouri, “Heterostructure Thermionic Coolers,” patent number
5,955,772, September 21, 1999.
19.
J. E. Bowers and A. Shakouri, “Heterostructure Thermionic Coolers,” patent number
6,323,414, November 27, 2001.
20.
J. E. Bowers and D. Babic, “Buried Layer in a Semiconductor Formed by Bonding,”
patent number 5,977,604, November 2, 1999.
21.
J. E. Bowers and D. Tauber. “Metal Layered Semiconductor Laser,” patent number
6,015,980, January 18, 2000.
22.
J. E. Bowers, D. Babic, J. J. Dudley, K. W. Carey, L. Yang, “Surface Emitting Laser
using Two Wafer Bonded Mirrors,” patent number 6,277,696, August 21, 2001.
23.
J. E. Bowers, A. R. Hawkins, “Semiconductor Hetero-Interface Photodetector”, patent
number 6,074,892, June 13, 2000.
24.
J. E. Bowers, A. R. Hawkins, “Semiconductor Hetero-Interface Photodetector”, patent
number 6,130,441, October 10, 2000.
25.
J. E. Bowers, A. R. Hawkins, “Semiconductor Hetero-Interface Photodetector,” patent
number 6,147,391, November 14, 2000.
26.
J. E. Bowers, A. R. Hawkins, “Semiconductor Hetero-Interface Photodetector,” patent
number 6,465,803, October 15, 2002.
27.
A. Shakouri, J. E. Bowers, “Method for Making Heterostructure Thermionic Coolers,”
patent number 6,060,331, May 9, 2000.
28.
J. E. Bowers, A. Shakouri, B.-G. Kim, B. Liu and P. Abraham, “Fused Vertical Coupler
for Switches, Filters and Other Electro-optic Devices,” patent number 6,385,376, May 7,
2002.
29.
A. Shakouri, C. Labounty and J. E. Bowers, “Two-stage three-terminal
thermionic/thermoelectric coolers,” patent number 6,552,256, April 22, 2003.
30.
D. Babic and J. E. Bowers, “Buried layer in a semiconductor formed by bonding”, patent
number 6,208,007, March 27, 2001.
31.
A. Shakouri and J. E. Bowers, “High efficiency heterostructure thermionic coolers”,
patent number 6,403,874, June 11, 2002.
32.
M. Little, J. Lyon, J. E. Bowers and R. Helkey, “2D Optical Switch”, patent number
6,396,976, May 28, 2002.
33.
R. Helkey, H.P. Koenig, J.E. Bowers, and R.K. Sink, “Optical Switch Having Mirrors
arranged to accommodate freedom of movement,” patent number 6,560,384, May 6,
2003.
34.
J. E. Bowers et al., “Micro-electro-mechanical-system (MEMS) mirror device and
methods for fabricating the same,” patent number 6,563,106, May 13, 2003.
35.
J. E. Bowers, et al. "Feedback stabilization of a loss optimized switch," patent number
6,728,433 May 4, 2004.
36.
J. E. Bowers, et al. “Method and apparatus for internal monitoring and control of
reflectors in an optical switch,” patent number 6,788,842.
37.
J. E. Bowers, et al. “Wavelength power equalization by attenuation in an optical switch,”
patent number 6,697,547.
38.
J. E. Bowers, et al. “Optical cross-connect switch with integrated optical signal tap,”
patent number 6,668,108.
39.
J. E. Bowers, et al. “Optical switch having switch mirror arrays controlled by scanning
beams,” patent number 6,643,425.
40.
J. E. Bowers, et al. “Feedback stabilization of a loss optimized switch,” patent number
6,456,751.
41.
J. E. Bowers et al., “Optical Switch Package,” patent number 6,819,824.
42.
J. E. Bowers et al., “Method and Apparatus for Indirect Adjustment of Optical Switch
Reflectors,” patent number 6,819,815.
43.
J. E. Bowers et al., "Optical Switch With Adjustable Optical Loss,” patent number
6,904,195, June 7, 2005.
44.
J. B. Bowers et al., “Method and Apparatus to Provide Alternative Paths for Optical
Protection Path Switch Arrays,” patent number 7,110,633, September 19, 2006.Bowers,
S. Yuan, R. Helkey, X. Zheng, J. Sechrist, "Optical Switch with Adjustable Optical
Loss," Patent 7127137, October 24, 2006.
45.
T. Walter, D. Blumenthal, J. E. Bowers, P. Hunt, R. Helkey, X. Zheng, "Wavelength
Power Equalization by Attenuation in an Optical Switch," filed 12/10/03 Patent
7,142,744, Nov. 28, 2006.
46.
J. E. Bowers, et al., “Apparatus for Simultaneous OTDM Demultiplexing, Electrical
Clock Recovery, and Optical clock Generation, and Optical Clock Recovery,” patent
7,184,189, February 27, 2007.
47.
J. E. Bowers, et al., "MEMS tunable vertical cavity semiconductor optical amplifier,"
patent 7457033, Nov. 25, 2008.
48.
R. Helkey, J. E. Bowers, X. Zheng, O. Jerphagnon, R. Anderson "Wavelength
Dependant Optical Switch," filed 06/30/03
49.
J. E. Bowers, Fast All Optical Packet Switches,” patent pending, filed 2005.
50.
J. E. Bowers, Optical Gain and Lasing in Silicon,” patent pending, filed 2005.
51.
J.E. Bowers, III-V Silicon Photonic Integration,” patent pending, filed 2006.
52.
J. Bowers, A. Fang, R. Jones, M. Paniccia, and H. Park. “Electrically Pumped
Semiconductor Evanescent Laser,” filed 6/30/06
53.
J. Zide, J. Bowers, A. Shakouri, A. Gossard, “High Efficiency Thermoelectric Materials
Based on Metal Semiconductor Nanocomposites,” filed 6/20/06.
54.
Bowers, et al., "MEMS tunable vertical cavity semiconductor optical amplifier," patent
7,457,033, Nov. 25, 2008.
55.
J.E. Bowers, et. al., "High Silicon Laser-Quantum Well Intermizing Wafer Bonded
Intergration Platform for Advanced Photonic Circuits with Electroabsorption
Modulators," patent 12,355,628, Jan 16, 2009.
JOURNALS
1.
R. D. Klem, J. E. Bowers, H. Kagan, J. Lee, E. Marquit, W. Peterson, and K. Ruddick,
“Measurement of Asymmetries of Inclusive Pion Production in Proton-Proton
Interactions at 6.0 and 11.8 GeV/C,” Physical Review Letters, 36 (16), 929-931, (1976).
2.
W. H. Dragoset, Jr., J.B. Roberts, J. E. Bowers, H. W. Courant, H. Kagan, M. L.
Marshak, E. A. Peterson, and K. Ruddick, “Asymmetries in Inclusive Proton-Nucleon
Scattering at 11.75 GeV/C,” Physical Review D., 11, 3939-3954, (1978).
3.
J. E. Bowers, J. L. Schmit, and J. Mroczkowski, “Characterization of LPE Grown Hg1xCdxTe,” Applied Physics Letters, 35 (6), 457-458, (1979).
4.
W. P. Robbins and J. E. Bowers, “Comparison of the Grating and Meander-Line
Transducers for Magnetoelastic Surface Wave Excitation,” Journal of Applied Physics,
50 (787), (1979).
5.
J. E. Bowers, B. T. Khuri-Yakub, and G. S. Kino, “Broadband Efficient Thin Film
Sezawa Wave Interdigital Transducers,” Applied Physics Letters, 36 (10), 806-807,
(1980).
6.
D. Behar, G. S. Kino, J. E. Bowers, and H. Olaison, “Storage Correlator as an Adaptive
Inverse Filter,” Electronic Letters, 16 (130), (1980).
7.
J. E. Bowers, J. L. Schmidt, C. J. Speerschneider, and R. B. Maciolek, “Comparison of
Hg0.6Cd0.4Te LPE Layer Growth from Te-, Hg-, and HgTe-rich Solutions,” IEEE Trans.
Elec. Dev., ED-27 (1), 24-28, (1980).
8.
H.C. Tuan, J. E. Bowers, and G. S. Kino, “Theoretical and Experimental Results for
Monolithic SAW Memory Correlators,” IEEE Trans. Sonics Ultrasonics, SU-27 (6), 360369, (1980).
9.
J. E. Bowers and G. S. Kino, “Adaptive Noise Cancellation With a SAW Storage
Correlator,” Electronic Letters, 17 (13), 460-461, (1981).
10.
J. E. Bowers, Ph.D. Thesis, “Broadband Monolithic Sezawa Wave Storage Correlators
and Convolvers,” Ginzton Lab Report #3260, Standford University, 118-123, (1981).
11.
J. E. Bowers, G. S. Kino, D. Behar, and H. Olaisen, “Adaptive Deconvolution Using a
SAW Storage Correlator,” IEEE Trans. Microwave Theory Tech., MTT-29 (5), 491-498,
(1981).
12.
K.P. Jackson, J. E. Bowers, S. A. Newton, and C.C. Cutler, “A Microbend Tapped Delay
Line for Gigahertz Signal Processing,” Applied Physics Letters, 42 (2), 139-141, (1982).
13.
R. L. Jungerman, J. E. Bowers, J.B. Green, and G. S. Kino, “Fiber Optic Laser Probe for
Acoustic Wave Measurements,” Applied Physics Letters, 40 (4), 313-315, (1982).
14.
J. E. Bowers, “Fiber-Optical Sensor for Surface Acoustic Waves,” Applied Physics
Letters, 41 (3), 231-233, (1982).
15.
J. E. Bowers, B. T. Khuri-Yakub, R. L. Thornton, and G. S. Kino, “The Effect of NonUniform Piezoelectric Films on Monolithic SAW Devices,” Applied Physics Letters, 41
(9), 805-807, (1982).
16.
J. E. Bowers, S. A. Newton, and H. J. Shaw, “Fiber Optic Variable Delay Lines,”
Electronic Letters, 18 (23), 999-1000, (1982).
17.
J. E. Bowers, S. A. Newton, W. V. Sorin, and H. J. Shaw, “Filter Response of Single
Mode Fiber Recirculating Delay Lines,” Electronic Letters, 18 (3), 110-11, (1982).
18.
M. Tur, J. W. Goodman, B. Moslehi, J. E. Bowers, and H. J. Shaw, “Fiber Optic Signal
Processor with Applications to Matrix-Vector Multiplication and Lattice Filtering,”
Optics Letters, 7 (9), 463-465, (1982).
19.
J. E. Bowers, L. A. Coldren, B. R. Hemenway, B. I. Miller and R. J. Martin, “1.55 µm
Multisection Ridge Lasers,” Electronic Letters, 19 (14), 523-525, (1983).
20.
B. R. Hemenway, J. E. Bowers and B. I. Miller, “Anisotropic Undercutting in (100)
Indium Phosphide,” Electronic Letters, 19, 1049, (1983).
21.
J. E. Bowers, R. L. Jungerman, and G. S. Kino, “An All Fiber Optic Sensor for Surface
Acoustic Wave Measurements,” J. Lightwave Tech., LT-1 (2), 429-436, (1983).
22.
S. A. Newton, J. E. Bowers, G. Kotler and H. J. Shaw, “Single-Mode Fiber 1 x N
Directional Coupler,” Optics Letters, 8 (1), 60-62, (1983).
23.
J. E. Bowers, J. E. Bjorkholm, C. A. Burrus, L. A. Coldren, B. R. Hemenway and D. P.
Wilt, “Cleaved-Coupled-Cavity Lasers with Large Cavity Length Ratios for Enhanced
Stability,” Applied Physics Letters, 44, 821, (1984).
24.
T. L. Koch and J. E. Bowers, “Nature of Wavelength Chirping in Directly Modulated
Semiconductor Lasers,” Electronic Letters, 20, 1038, (1984).
25.
A. F. Arbel and J. E. Bowers, “Low Noise High-Speed Optical Receiver for Fiber Optic
Systems,” IEEE Journal of Solid State Circuits, SC-19 (1), 155-157, (1984).
26.
J. E. Bowers, R. S. Tucker and C. A. Burrus, “6-GHz Direct Frequency Modulation of
Cleaved-Coupled-Cavity Channeled Substrate Buried Heterostructure Lasers,” Journal of
Quantum Electronics, QE-20, 1230, (1984).
27.
W. T. Tsang, N. A. Olsson, R. A. Logan, C. H. Henry, L. F. Johnson, J. E. Bowers and J.
Long, “The Heteroepitaxial Ridge Overgrown Distributed Feedback Laser,” Journal of
Quantum Electronics, QE-21, 519, (1984).
28.
J. E. Bowers and D. P. Wilt, “Optimum Design of 1.55 µm Double Heterostructures and
Ridge Waveguide Lasers,” Optics Letters, 9, 330, (1984).
29.
B. G. Koehler and J. E. Bowers, “In Line Single Mode Fiber Polarization Controllers at
1.55µm, 1.30µm and 0.63µm,” Applied Optics, 24, 349, (1985).
30.
J. E. Bowers, B. R. Hemenway, and D. P. Wilt, “Etching of Deep Grooves for the
Precise Positioning of Cleaves in Semiconductor Lasers,” Applied Physics Letters, 46,
453, (1985).
31.
J. E. Bowers, B. R. Hemenway, A. H. Gnauck, T. J. Bridges and E. G. Burkhardt, “High
Frequency Constricted Mesa Lasers,” Applied Physics Letters, 47, 78, (1985).
32.
J. E. Bowers, W. T. Tsang, T. L. Koch, N. A. Olsson and R. A. Logan, “Microwave
Intensity and Frequency Modulation of Heteroepitaxial-Ridge-Overgrown-DistributedFeedback Lasers,” Applied Physics Letters, 46 (3), 233, (1985).
33.
L. A. Coldren, G. D. Boyd, J. E. Bowers and C. A. Burrus, “Reduced Dynamic Linewidth
in Three-Terminal Two-Section Diode Lasers,” Applied Physics Letters, 46 (2), 125,
(1985).
34.
J. E. Bowers, B. R. Hemenway, D. P. Wilt, T. J. Bridges and E. G. Burkhardt, “26.5 GHz
Bandwidth InGaAsP Lasers with Tight Optical Confinement,” Electronic Letters, 21,
1090, (1985).
35.
A. H. Gnauck, J. E. Bowers, and J.C. Campbell, “8 Gb/s Transmission Over 30 km of
Optical Fiber,” Electronic Letters, (1985).
36.
J. E. Bowers, T. L. Koch, B. R. Hemenway, T. J. Bridges, E. G. Burkhardt, and D. P.
Wilt, “High Frequency Modulation of 1.52 µm Vapor Phase Transported InGaAsP
Lasers,” Electronic Letters, 21, 297, (1985).
37.
C. Lin and J. E. Bowers, “High-Speed Large-Signal Digital Modulation of a 1.3µm
InGaAsP Constricted Mesa Laser at a Simulated Bit Rate of 16 Gb/s,” Electronic Letters,
21, 906, (1985).
38.
U. Koren, G. Eisenstein, J. E. Bowers, A. H. Gnauck, and P. K. Tien, “Improved
Bandwidth of Three Channel Buried Crescent Lasers,” Electronic Letters, 21, 500,
(1985).
39.
C. A. Burrus, J. E. Bowers and R. S. Tucker, “Improved Very-High-Speed Packaged
InGaAs PIN Punch-through Photodiode,” Electronic Letters, 21, 262, (1985).
40.
J. E. Bowers, C. A. Burrus, and R. J. McCoy, “InGaAs PIN Photodetectors With
Modulation Response to Millimeter Wavelengths,” Electronic Letters, 21, 812, (1985).
41.
C. Lin and J. E. Bowers, “Measurements of 1.3 µm and 1.55 µm Gain Switched
Semiconductor Laser Pulses With a Picosecond IR Streak Camera and a High Speed
InGaAs PIN Photodiode,” Electronic Letters, 21, 1200, (1985).
42.
J. E. Bowers, “Millimeter Wave Response of InGaAsP Lasers,” Electronic Letters, 21,
1195, (1985).
43.
J. M. Wiesenfeld, R. S. Tucker, P. M. Downey and J. E. Bowers, “Optical Correlation
Measurement of Switching Transients in High-Speed Semiconductor Lasers,” Electronic
Letters, 22, 396, (1985).
44.
G. D. Boyd, C. E. Soccolich, J. E. Bowers, C. A. Burrus, T. L. Koch, and J. M. Jopson,
“Spectral Linewidth of 1.3 µm Cleaved Coupled Cavity Lasers,” Electronic Letters, 21,
1129, (1985).
45.
R. H. Stolen, A. Ashkin, J. E. Bowers, J. M. Dziedzic and W. Pleibel, “Polarization
Selective Fiber Directional Coupler,” Journal of Lightwave Tech., LT-3, 1125, (1985).
46.
J. E. Bowers and C. A. Burrus, “Optoelectronic Components and Systems with
Bandwidths in Excess of 26 GHz,” RCA Review, 46, 496, (1985).
47.
P. M. Downey, J. E. Bowers, C. A. Burrus, L. Mitschke and L. Mollenauer, “High Speed,
Hybrid InGaAsP/GaP p-i-n/ Photoconductor Circuit,” Applied Physics Letters, 49, 430,
(1986).
48.
R. S. Tucker, J. M. Wiesenfeld, P. M. Downey and J. E. Bowers, “Propagation Delays
and Transition Times in Pulse-Modulated Semiconductor Lasers,” Applied Physics
Letters, 48, 1707, (1986).
49.
R. Schimpe, J. E. Bowers, and T. L. Koch, “Characterization of Frequency Response of a
1.5 µm InGaAsP DFB Laser Diode and InGaAs PIN Photodiode by Heterodyne
Measurement Technique,” Electronic Letters, 22, 453, (1986).
50.
J. E. Bowers, A.K. Srivastava, C. A. Burrus, J. C. DeWinter, M. A. Pollack and J. L.
Zyskind, “High Speed GaInAsSb/ GaSb PIN Photodetectors for Wavelengths to 2.3 µm,”
Electronic Letters, 22, 137, (1986).
51.
J. E. Bowers and C. A. Burrus, “High Speed Zero Bias Waveguide Photodetectors,”
Electronic Letters, 22, 905, (1986).
52.
J. E. Bowers, C. A. Burrus, and F. Mitschke, “Millimeter Waveguide-Mounted InGaAs
Photodetectors,” Electronic Letters, 22, 137, (1986).
53.
J. E. Bowers, “Optical Transmission Using PSK Modulated Subcarriers at Frequencies to
16 GHz,” Electronic Letters, 22, 1119, (1986).
54.
J. E. Bowers, B. R. Hemenway, A. H. Gnauck and D. P. Wilt, “High Speed InGaAsP
Constricted Mesa Lasers," Journal of Quantum Electron., 22, 833, (1986).
55.
J. C. Campbell, W. T. Tsang, G. J. Qua, and J. E. Bowers, “InP/InGaAsP/InGaAs
Avalanche Photodiodes with 70 GHz Gain-Bandwidth Product,” App. Phys. Lett., 51,
1454-1456, (1987).
56.
U. Koren, B. I. Miller, K. Y. Su, T. U. Koch and J. E. Bowers, “Low Internal Loss
Separate Confinement Heterostructure InGaAs/InGaAsP Quantum Well Laser,” App.
Phys. Lett., 51, 1744-1746, (1987).
57.
J. E. Bowers and M. A. Pollack, “Injection Lasers For Telecommunications,” chapter in
Optical Fiber Telecommunications II,, S.E. Miller and I.P. Kaminow, eds., Academic
Press, New York, (1987).
58.
A. H. Gnauck and J. E. Bowers, “16 Gbit/s Direct Modulation of an InGaAsP Laser,”
Electronic Letters, (1987).
59.
R. S. Tucker, A. H. Gnauck, J. M. Wiesenfeld and J. E. Bowers, “8Gb/s Return to Zero
Modulation of a Semiconductor Laser by Gain Switching,” Electronic Letters, 22, 1329,
(1987).
60.
J. E. Bowers, A.C. Chipaloski, S. Boodaghians and J. W. Carlin, “Direct Fiber Optic
Transmission of Entire Microwave Satellite Antenna Signals,” Electronic Letters, 23,
185, (1987).
61.
J. E. Bowers, U. Koren, B. I. Miller, C. Soccolich, and W. Y. Jan, “High Speed
Polyimide Based Semi-Insulating Planar Buried Heterostructures,” Electronic Letters, 23,
1263-1265, (1987).
62.
P. M. Downey, J. E. Bowers, R. S. Tucker and E. Agyekum, “Picosecond Dynamics of a
Gain-Switched InGaAsP Laser,” IEEE J. Quantum Electron., QE-23, 1039, (1987).
63.
J. E. Bowers and C. A. Burrus, “Ultra-Wide Band Long-Wavelength PIN
Photodetectors,” Invited Paper, J. Lightwave Tech., LT-5, 1339, (1987).
64.
J. E. Bowers, “High Speed Semiconductor Laser Design and Performance,” Invited
Paper, Solid State Electronics, 30, 1, (1987).
65.
B. L. Kasper, J. C. Campbell, J. R. Talman, A. H. Gnauck, J. E. Bowers and W. S.
Holden, “An APD/FET Optical Receiver Operating at 8 Gbit/s,” J. Lightwave Tech., LT5, 344, (1987).
66.
J. E. Bowers, A. C. Chipaloski, S. Boodaghians and J.W. Carlin, “Long Distance Fiber
Optic Transmission of C-Band Microwave Signals to and from a Satellite Antenna,” J.
Lightwave Tech., LT-5, 1733, (1987).
67.
S. W. Corzine, J. E. Bowers, G. Przybylek, U. Koren, B. I. Miller, and C. E. Soccolich,
“An Actively Mode Locked GaInAsP Laser With Subpicosecond Output,” App. Phys.
Lett., 52 (5), 348-350, February, (1988).
68.
G. D. Boyd, J. E. Bowers, C. E. Soccolich, D. A. Miller, D. S. Chemla, L. M. F.
Chirovsky, A. C. Gossard and J. H. English, “5.5 GHz Multiple Quantum Well
Reflection Modulator,” Electronics Letters, 25 (9), 558-559, April, (1989).
69.
J. E. Bowers, P. A. Morton, A. Mar, and S. Corzine, “Actively Mode Locked
Semiconductor Lasers,” J. Quantum Electronics, 25 (6), 1426-1439, June, (1989).
70.
P. A. Morton, R. F. Ormondroyd, J. E. Bowers, and M. S. Demokan, “Large-Signal
Harmonic and Intermodulation Distortions in Wide-Bandwidth GaInAsP Semiconductor
Lasers,” J. Quantum Electronics, 25 (6), 1559-1567, June, (1989).
71.
P. A. Morton, R. J. Helkey, and J. E. Bowers, “Dynamic Detuning in Actively Mode
Locked Semiconductor Lasers,” J. Quantum Electronics, 25 (12), 2621-2633, December,
(1989).
72.
J. E. Bowers, “Modulation Properties of Semiconductor Lasers,” chapter in
Optoelectronics for the Information Age, C. Lin, ed., Van Nostrand, New York, (1989).
73.
P. A. Morton, R. J. Helkey, S. W. Corzine, J. E. Bowers, “Subpicosecond Multiple Pulse
Formation in Actively Mode Locked Semiconductor Lasers,” OSA Proceedings on
Picosecond Electronics and Optoelectronics,, Vol. 4, G. Sollner and D. M. Bloom, eds.,
Washington, D. C., (1989).
74.
P. A. Morton and J. E. Bowers, “Monolithic Hybrid Mode Locked 1.3 µm Semiconductor
Lasers,” Applied Physics Letters, 56 (2), 111-113, January, (1990).
75.
D. J. Derickson, R. J. Helkey, A. Mar, P. A. Morton, and J. E. Bowers, “Self Mode
Locking of a Semiconductor Laser Using Positive Feedback,” Applied Physics Letters, 56
(1), 7-9, January, (1990).
76.
R. J. Helkey, P. A. Morton, and J. E. Bowers, “Partial Integration Method for Analysis of
Mode Locked Semiconductor Lasers,” Optics Letters, 15 (2), 112-114, January, (1990).
77.
P. A. Morton, D. L. Crawford and J. E. Bowers, “Design of 1.3 mm GaInAsP Surface
Emitting Lasers for High Bandwidth Operation,” Optics Letters, 15 (12), 679-681, June,
(1990).
78.
A. Mar, P. A. Morton, and J. E. Bowers, “Optimum Facet Reflectivity for High Speed
Lasers,” Electronics Letters, 26 (17), 1382-1384, August, (1990).
79.
J. R. Karin, L. G. Melcer, R. L. Nagarajan, J. E. Bowers, S. W. Corzine, P. A. Morton, R.
S. Geels and L. A. Coldren, “Generation of Picosecond Pulses With a Gain Switched
GaAs Surface Emitting Laser,” Applied Physics Letters, 57 (10), 963-965, September,
(1990).
80.
D. J. Derickson, A. Mar, and J. E. Bowers, “Residual and Absolute Timing Jitter in
Actively Mode-Locked Semiconductor Lasers,” Electronics Letters, 26 (24), 2026-2028,
November, (1990).
81.
D. L. Crawford, Y. G. Wey, A. Mar, J. E. Bowers, M. J. Hafich, and G. Y. Robinson,
“High Speed InGaAs/InP P-I-N Photodiodes Fabricated on a Semi-Insulating Substrate,”
Photonics Technology Lett., 2 (9), 647-649, (1990).
82.
T. Fukushima, J. E. Bowers, R. A. Logan, T. Tanbun-Ek, and H. Temkin, “Effect of
Strain on the Resonant Frequency and Damping Factor in InGaAs/InP Multiple Quantum
Well Lasers,” Applied Physics Letters, 58 (12), 1244-1246, March, (1991).
83.
D. L. Crawford, R. L. Nagarajan, and J. E. Bowers, “Comparison of Bulk and Quantum
Wire Photodetectors,” Applied Physics Letters, 58 (15), 1629-1631, April, (1991).
84.
R. L. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, “High
Speed InGaAs/GaAs Strained Multiple Quantum Well Lasers with Low Damping,”
Applied Physics Letters, 58 (21), 2326-2328, May, (1991).
85.
Y. G. Wey, D. L. Crawford, K. Giboney, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J.
Hafich and G. Y. Robinson, “Ultrafast Graded Double Heterostructure GaInAs/InP
Photodiode,” Applied Physics Letters, 58 (19), 5156-2158, May, (1991).
86.
D. I. Babic, J. J. Dudley, M. Shirazi, E. L. Hu, and J. E. Bowers, “Sputter Deposition of
Precision Si/Si3N4 Bragg Reflectors Using Multi-Tasking Interactive Processing
Control,” Journal of Vacuum Vac. Sci. Tech. A, 9 (3), 1113-1117, May/June, (1991).
87.
R. L. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, “Single
Quantum Well Strained InGaAs/GaAs Lasers With Large Modulation Bandwidth and
Low Damping,” Electronic Letters, 27 (12), 1058-1059, June, (1991).
88.
W. H. Cheng, K. D. Buehring, A. Appelbaum, D. Renner, S. Shin, C. B. Su, A. Mar, and
J. E. Bowers, “High-Speed and Low-Relative-Intensity Noise 1.3µm InGaAsP SemiInsulating Buried Crescent Lasers,” J. of Quantum Electron., 27 (6), 1642-1647, June,
(1991).
89.
L. G. Melcer, J. R. Karin, R. L. Nagarajan, and J. E. Bowers, “Picosecond Dynamics of
Optical Gain Switching in Vertical Cavity Surface Emitting Lasers,” J. of Quantum
Electron., 27 (6), 1417-1425, June, (1991).
90.
M. Kamegawa, K. Giboney, J. R. Karin, S. Allen, M. Case, R. Yu, M. J. W. Rodwell, and
J. E. Bowers, “Picosecond GaAs Monolithic Optoelectronic Sampling Circuit,”
Photonics Technology Lett., 3 (6), 567-569, June, (1991).
91.
C. Johnsen, S. Sloan, D. Braun, J. Russel, M. Zurakowski, M. Lightner, F. Kellert, G.
Patterson, R. Koo, D. Derickson, and J. E. Bowers, “Efficient Single Heterojunction
Al0.27Ga0.73As/GaAs p-i-n Photodiodes with 22 GHz Bandwidths,” Electron. Dev.
Lett., 38 (8), 1968-1970, August, (1991).
92.
T. Fukushima, R. L. Nagarajan, J. E. Bowers, R. A. Logan and T. Tanbun-Ek, “Relative
Intensity Noise Reduction In InGaAs/InP Multiple Quantum Well Lasers With Low
Nonlinear Damping,” Photonics Technology Letters, 3 (8), 691-693, August, (1991).
93.
R. L. Nagarajan, T. Fukushima, S. W. Corzine, and J. E. Bowers, “Effects of Carrier
Transport on High Speed Quantum Well Lasers,” Applied Physics Letters, 59 (15), 18351837, October, (1991).
94.
I.-H. Tan, D. Lishan, R. Mirin, V. Jayaraman, T. Yasuda, E. L. Hu, and J. E. Bowers,
“Systematic Observation of Strain-Induced Lateral Confinement of Excitons in
GaAs/AlGaAs Quantum Well by Chemical Dry Etching,” Applied Physics Letters, 59
(15), 1875-1877, October, (1991).
95.
I. H. Tan, D. Lishan, R. Mirin, V. Jayaraman, T. Yasuda, E. Hu, and J. E. Bowers,
“Strain-induced Lateral Confinement of Excitons in GaAs/AlGaAs Quantum Well by
Chemical Dry Etching,” J. Vac. Sci. Tech. B, 9 (6), 3498-3501, November/December,
(1991).
96.
H. Wada, D. I. Babic, D. L. Crawford, T. E. Reynolds, J. J. Dudley, J. E. Bowers, E. L.
Hu, J. L. Merz, B. I. Miller, U. Koren, and M. G. Young, “Low Threshold, HighTemperature Pulsed Operation of InGaAsP/InP Vertical Cavity Surface Emitting Lasers,”
Photonics Technology Letters, 3 (11), 977-979, November, (1991).
97.
D. J. Derickson, P. A. Morton, J. E. Bowers, and R. L. Thornton, “Comparison of Timing
Jitter in External and Monolithic Cavity Mode-Locked Semiconductor Lasers,” Applied
Physics Letters, 59 (26), 3372-3374, December, (1991).
98.
P. A. Morton, D. J. Derickson, R. J. Helkey, A. Mar, and J. E. Bowers, “Mode Locked
Semiconductor Lasers,” Laser Optics of Condensed Matter, Vol. 2, E. Garmire, A. A.
Maradudin, and K. K. Rebane, eds., Plenum Press, New York, December, (1991).
99.
W. B. Jiang, R. Mirin, and J. E. Bowers, “Mode-locked GaAs Vertical Cavity Surface
Emitting Lasers,” Applied Physics Letters, 60 (6), 677-679, February, (1992).
100.
R. L. Nagarajan, T. Fukushima, M. Ishikawa, J. E. Bowers, R. S. Geels, and L. A.
Coldren, “Transport Limits in High Speed Quantum Well Lasers: Experiment and
Theory,” Photonics Technology Letters, 4 (2), 121-123, February, (1992).
101.
P. Silvestre, M. J. Hafich, T. Vogt, A. Nanda, G. Y. Robinson, J. J. Dudley, J. E. Bowers,
K. M. Jones, and M. M. Al-Jassim, “Gas-Source Molecular-Beam Epitaxial Growth of
InGaAsP for 1.3 (micro)m Distributed Bragg Reflectors,” J. Vac. Sci. Tech. B, 10 (2),
956-958, March/April, (1992).
102.
R. L. Nagarajan, M. Ishikawa, and J. E. Bowers, “Effects of Carrier Transport on
Relative Intensity Noise and Critique of K Factor Predictions of Modulation Response,”
Electronic Letters, 28 (9), 846-847, April, (1992).
103.
R. T. Huang, D. Wolf, W-H Cheng, C-L. Jiang, R. Agarwal, D. Renner, A. Mar, J. E.
Bowers, “High-Speed, Low-Threshold InGaAsP Semi-Insulating Buried Crescent Lasers
with 22 GHz Bandwidth,” Photonics Technology Letters, 4 (4), 293-295, April, (1992).
104.
D. J. Derickson, R. J. Helkey, A. Mar, and J. E. Bowers, “Suppression of Multiple Pulse
Formation in External Cavity Mode-Locked Lasers Using Intra-Waveguide Saturable
Absorbers,” Photonics Technology Letters, 4 (4), 333-335, April, (1992).
105.
J. J. Dudley, D. L. Crawford, J. E. Bowers, “Temperature Dependence of the Properties
of DBR Mirrors Used in Surface Normal Optoelectronic Devices,” Photonics Technology
Letters, 4 (4), 311-314, April, (1992).
106.
D. J. Derickson, R. J. Helkey, A. Mar, J. B. Wasserbauer, W. B. Jiang, and J. E. Bowers,
“Mode-Locked Semiconductor Lasers: Short Pulse, Small Package,” Optics and
Photonics News, 3 (5), 14-20, May, (1992).
107.
H. Wada, D. I. Babic, M. Ishikawa, and J. E. Bowers, “Effects of Non-Uniform Current
Injection in GaInAsP/InP Vertical Cavity Lasers,” Applied Physics Letters, 60 (24),
2974-2976, June, (1992).
108.
A. Mar, D. J. Derickson, R. Helkey, J. E. Bowers, R. T. Huang, and D. Wolf, “Actively
Mode-Locked External-Cavity Semiconductor Lasers With Transform-Limited Single
Pulse Output,” Optics Letters, 17 (12), 868-870, June, (1992).
109.
M. Mondry, D. Babic, J. E. Bowers, and L. A. Coldren, “Refractive Index of
(Al,Ga,In)As as Epilayers on InP for Optoelectronic Applications,” Photonics
Technology Letters, 4 (6), 627-630, June, (1992).
110.
I.-H. Tan, R. Mirin, V. Jayaraman, S. Stone, E. L. Hu, J. E. Bowers, and J. Merz,
“Photoluminescence Study of Strain-Induced Quantum Well Dots by Wet Etching
Technique,” Applied Physics Letters, 61 (3), 300-302, July, (1992).
111.
M. Ishikawa, T. Fukushima, R. L. Nagarajan, and J. E. Bowers, “Temperature
Dependence of Damping in High Speed Quantum-Well Lasers,” Applied Physics Letters,
61 (4), 396-398, July, (1992).
112.
I.-H. Tan, R. Mirin, T. Yasuda, M. Y. He, E. Hu, J. E. Bowers, P. Hansma, and A. Evans,
“Study of Partial Strain Release and Surface States Formed on the Side Wall of InGaAs
Quantum Well Wires,” J. Vac, Sci Tech. B, 10 (4), 1971-1974, July/August, (1992).
113.
R. Mirin, I.-H. Tan, H. Weman, M. Leonard, T. Yasuda, J. E. Bowers, and E. L. Hu,
“InGaAs Quantum Well Wires Grown on Patterned GaAs Substrates,” J. Vac. Sci. Tech.
A, 10 (4), 697-700, July/August, (1992).
114.
D. I. Babic, T. E. Reynolds, E. L. Hu, and J. E. Bowers, “In-situ Characterization of Thin
Film Optical Coatings Using a Normal Incidence Laser Reflectometer,” J. Vac. Sci. Tech.
A, 10 (4), 939-944, July/August, (1992).
115.
I.-H. Tan, T. Yasuda, M. Y. He, R. Mirin, D. Lishan, E. L. Hu, J. E. Bowers, J. Merz, and
A. Evans, “Optical Study of Strained Quantum Well Wires,” J. Vac. Sci. Tech. A, 10 (4),
664-668, July/August, (1992).
116.
J. G. Wasserbauer, J. E. Bowers, M. J. Hafich, P. Silvestre, L. M. Wood, and G. Y.
Robinson, “Specific Contact Resistivity of InGaAs/InP p-Isotype Heterojunctions,”
Electronic Letters, 28 (17), 1568-1570, August, (1992).
117.
R. L. Nagarajan, R. P. Mirin, T. E. Reynolds, and J. E. Bowers, “Effect of the
Confinement Layer Composition on the Internal Quantum Efficiency and Modulation
Response of Quantum Well Lasers,” Photonics Technology Letters, 4 (8), 832-834,
August, (1992).
118.
R. J. Helkey, D. J. Derickson, A. Mar, J. Wasserbauer, J. E. Bowers, and R. L. Thornton,
“Repetition Frequency Stabilization of Passively Mode-Locked Semiconductor Lasers,”
Electronic Letters, 28 (20), 1920-1922, September, (1992).
119.
S. Levy, R. L. Nagarajan, A. Mar, P. Humphrey, and J. E. Bowers, “Fiber-Optic PSK
Subcarrier Transmission at 35 GHz Using a Resonantly Enhanced Semiconductor Laser,”
Electronic Letters, 28 (22), 2103-2104, October, (1992).
120.
R. L. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels and J. E. Bowers, “High Speed
Quantum Well Lasers and Carrier Transport Effects,” J. Quantum Electron., 28 (10),
1990-2008, October, (1992).
121.
M. Ishikawa, R. L. Nagarajan, T. Fukushima, J. G. Wasserbauer, and J. E. Bowers,
“Long Wavelength High Speed Semiconductor Lasers With Carrier Transport Effects,” J.
Quantum Electron., 28 (10), 2230-2241, October, (1992).
122.
D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers,
“Short Pulse Generation Using Multi-Segment Mode-Locked Lasers,” J. Quantum
Electron., 28 (10), 2186-2202, October, (1992).
123.
I. H. Tan, Y. L. Chang, S. Shi, R. Mirin, E. Hu, J. Merz, and J. E. Bowers, “Evaluation of
the Etch Depth Dependence of Three Dimensional Confinement in Strain-Induced
Quantum Well Dots,” J. Vac. Sci. Tech. B, 10 (6), 2851-2854, November/December,
(1992).
124.
J. J. Dudley, M. Ishikawa, D. I. Babic, B. I. Miller, R. Mirin, W. B. Jiang, J. E. Bowers,
and E. L. Hu, “144 ºC Operation of 1.3 (micro)m InGaAsP Vertical Cavity Lasers on
GaAs Substrates,” Applied Physics Letters, 61 (26), 3095-3097, December 28, (1992).
125.
K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, “Travelling-Wave Photodetectors,”
Photonics Technology Letters, 4 (12), 1363-1365, December, (1992).
126.
D. Tauber, G. Wang, R. S. Geels, J. E. Bowers, and L. A. Coldren, “Large and Small
Signal Dynamics of Vertical Cavity Surface Emitting Lasers,” Appl. Pys. Lett., 62 (4),
325-327, January 25, (1993).
127.
R. J. Helkey, D. J. Derickson, A. Mar, J. G. Wasserbauer, J. E. Bowers, “Millimeter
Wave Signal Generation Using Semiconductor Diode Lasers,” Invited Paper,
Microwave and Optical Technology Letters, 6 (1), 1-5, January, (1993).
128.
T. Fukushima, R. L. Nagarajan, M. Ishikawa, and J. E. Bowers, “High-Speed Dynamics
in InP Based Multiple Quantum Well Lasers,” Jpn. J. Appl. Phys., 32 (1A), 89-102,
January, (1993).
129.
W. B. Jiang, M. Shimizu, R. P. Mirin, T. E. Reynolds, and J. E. Bowers, “Femtosecond
Periodic Gain Vertical-Cavity Lasers,” Photonics Technology Letters, 5 (1), 23-24,
January, (1993).
130.
P. D. Humphrey, and J. E. Bowers, “Fiber-Birefringence Tuning Technique for an
Erbium-Doped Fiber Ring Laser,” Photonics Technology Letters, 5 (1), 32-34, January,
(1993).
131.
R. L. Nagarajan, S. Levy, A. Mar, and J. E. Bowers, “Resonantly Enhanced
Semiconductor Lasers for Efficient Transmission of Millimeter Wave Modulated Light,”
Photonics Technology Letters, 5 (1), 4-6, January, (1993).
132.
M. E. Heimbuch, A. L. Holmes, Jr., M. P. Mack, and S. P. Den Baars, L. A. Coldren, and
J. E. Bowers, “Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric
Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutlyphosphine (TBP),”
Electronics Letters, 29 (4), 340-341, February, (1993).
133.
D. Derickson, R. Helkey, A. Mar, J. Wasserbauer, and J. E. Bowers, “Mode-Locked
Semiconductor Lasers,” Invited Paper, Microwave Journal, 36 (2), 76-90, February,
(1993).
134.
R. Mirin, M. Krishanmurthy, I. H. Tan, J. E. Bowers, A. C. Gossard, and E. Hu,
“Morphology and Optical Properties of Strained InGaAs Quantum Well Wires,” J. of
Crystal Growth, 127, 881-886, February, (1993).
135.
P. D. Humphrey and J. E. Bowers, “Measurement of Fibre-Optic Chromatic Dispersion
from RIN Spectra of a Tunable Fibre Laser,” Electronics Letters, 29 (6), 515-517, March
18, (1993).
136.
S. Levy, R. L. Nagarajan, R. J. Helkey, P. Humphrey, and J. E. Bowers, “Millimetre
Wave Fiber-Optic PSK Subcarrier Transmission at 35 GHz over 6.3 km using a Grating
External Cavity Semiconductor Laser,” Electronics Letters, 29 (8), 690-691, April 15,
(1993).
137.
L. Smilowitz, A. Hays, A. J. Heeger, G. Wang, and J. E. Bowers, “Time Resolved
Photoluminescence From Poly (2-methoxy, 5-(2’ethyl-hexloxy)-p-phenylene-vinylene):
Solutions, Gels, Films, and Blends,” J. Chem. Physics, 98 (8), 6504-6509, April 15,
(1993).
138.
W. B. Jiang, D. Derickson, R. Mirin, and J. E. Bowers, “Analysis of Laser Pulse Chirping
in Mode-locked Vertical Cavity Surface Emitting Lasers,” J. Quantum Electron., 29 (5),
1309-1318, May, (1993).
139.
M. Shimizu, D. I. Babic, J. J. Dudley, W. B. Jiang, and J. E. Bowers, “Thermal
Resistance of 1.3 µm InGaAsP Vertical Cavity Lasers,” Microwave and Optical
Technology Letters, 6 (8), 455-457, June 20, (1993).
140.
R. L. Nagarajan, and J. E. Bowers, “Effects of Carrier Transport on Injection Efficiency
and Wavelength Chirping in Quantum Well Lasers,” J. of Quantum Electron., 29 (6),
1601-1608, June, (1993).
141.
W. H. Cheng, A. Mar, J. E. Bowers, R. T. Huang, and C. B. Su, “High-Speed 1.3 µm
InGaAsP Fabry-Perot Lasers for Digital and Analog Applications,” J. of Quantum
Electron., 29 (6), 1960-1967, June, (1993).
142.
D. I. Babic, Y. Chung, N. Dagli, and J. E. Bowers, “Modal Reflection of Quarter-Wave
Mirrors in Vertical Cavity Lasers,” J. of Quantum Electron., 29 (6), 1950-1962, June,
(1993).
143.
G. Wang, R. L. Nagarajan, D. Tauber, and J. E. Bowers, “Reduction of Damping in High
Speed Semiconductor Lasers,” Photonics Technology Letters, 5 (6), 642-645, June,
(1993).
144.
R. L. Nagarajan, R. P. Mirin, T. E. Reynolds, and J. E. Bowers, “Experimental Evidence
for Hole Transport Limited Intensity Modulation Response in Quantum Well Lasers,”
Electronics Letters, 29 (19), 1688-1690, September, (1993).
145.
W. Jiang, M. Shimizu, R. P. Mirin, T. E. Reynolds, and J. E. Bowers, “Electrically
Pumped Mode-Locked Vertical-Cavity Semiconductor Lasers,” Optics Letters, 18 (22),
1937-1939, November 15, (1993).
146.
Y. G. Wey, K. S. Giboney, J. E. Bowers, M. J. W. Rodwell, P. Silvestre, P. Thiagarajan,
and G. Y. Robinson, “108 GHz GaInAs/InP p-i-n Photodiodes with Integrated Bias Tees
and Matched Resistors,” IEEE Photonic Tech. Lett., 5 (11), 1310-1312, November,
(1993).
147.
A. Mar, R. Helkey, J. E. Bowers, D. Botez, C. Zmudzinski, C. Tu, and L. Mawst, “ModeLocked Multi-Segment Resonant-Optical-Waveguide Diode Laser Arrays,” IEEE
Photonic Tech. Lett., 5 (12), 1355-1359, December, (1993).
148.
I.-H. Tan, T. Yasuda, R. Mirin, D. Lishan, E. Hu, J. E. Bowers, and J. Merz,
“Observation of Quantum Confinement in Strain-Induced Quantum Wires/Dots,”
Quantum-Effect Physics, Electronics and Applications, Institute of Publishing, London,
(1993).
149.
R. L. Nagarajan, D. Tauber, and J. E. Bowers, “High Speed Semiconductor Lasers,”
Invited Paper, International Journal of High Speed Electronics and Systems, 9 (1), 1-44,
January, (1994).
150.
R. L. Nagarajan, S. Levy and J. E. Bowers, “Millimeter Wave Narrowband Optical Fiber
Links Using External Cavity Semiconductor Lasers,” J. of Lightwave Technology, 12 (1),
127-136, January, (1994).
151.
J. R. Karin, R. J. Helkey, D. J. Derickson, R. L. Nagarajan, D. S. Allin, J. E. Bowers, and
R. L. Thornton, “Ultrafast Dynamics in Field-Enhanced Saturable Absorbers,” Applied
Physics Letters, 64 (6), 676-678, February 7, (1994).
152.
T. Ishikawa and J. E. Bowers, “Band Lineup and In-Plane Effective Mass of InGaAsP or
InGaAlAs on InP Strained Layer Quantum Well,” Special Issue on Strained-Layer
Optoelectronic Materials and Devices, J. of Quantum Electron., 30 (2), 562-570,
February, (1994).
153.
D. A. Tauber, R. Spickermann, R. L. Nagarajan, T. Reynolds, A. L. Holmes, Jr., and J. E.
Bowers, “Inherent Bandwidth Limits in Semiconductor Lasers due to Distributed
Microwave Effects,” Applied Physics Letters, 64 (13), 1610-1612, March 28, (1994).
154.
J. J. Dudley, D. I. Babic, R. Mirin, L. Yang, B.I. Miller, R. J. Ram, T. Reynolds, E. L.
Hu, and J. E. Bowers, “Low Threshold, Wafer Fused Long Wavelength Vertical Cavity
Lasers,” Applied Physics Letters, 64 (12), 1463-1465, March, (1994).
155.
D. I. Babic, R. J. Ram, M. Tan, L. Yang, and J. E. Bowers, “Scaling Laws for Gainguided Vertical Cavity Lasers with Distributed Bragg Reflectors,” Applied Physics
Letters, 64 (14), 1762-1764, April 4, (1994).
156.
D. I. Babic, J. J. Dudley, K. Streubel, R. P. Mirin, E. L. Hu, and J. E. Bowers, “Optically
Pumped All-Epitaxial Wafer-Fused 1.52µm Vertical Cavity Lasers,” Electronics Letters,
30 (9), 704-706, April 28, (1994).
157.
G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time
Resolved Optical Characterization of InGaAs/GaAs Quantum Dots,” Applied Physics
Letters, 64 (21), 2815-2817, May 23, (1994).
158.
I.-H. Tan, J. J. Dudley, D. I. Babic, D. A. Cohen, B. D. Young, E. L. Hu, J. E. Bowers,
B. I. Miller, U. Koren, and M. G. Young, “High Quantum Efficiency and Narrow
Absorption Bandwidth of the Wafer-fused Resonant In0.53Ga0.47 As Photodetectors,”
IEEE Photonics Technology Letters, 6 (7), 811-813, July, (1994).
159.
T. Ishikawa, R. L. Nagarajan, and J. E. Bowers, “Analysis of the Effects of Doping and
Barrier Design on the Small-signal Modulation Characteristics of Long-wavelength
Multiple Quantum Well Lasers,” Optical and Quantum Electronics, 26 (7), S805-S816,
July, (1994).
160.
R. C. Yu, R. L. Nagarajan, T. Reynolds, A. Holmes, J. E. Bowers, S. P. Denbaars, and CE. Zah, “Ultrahigh Speed Performance of a Quantum Well Laser at Cryogenic
Temperatures,” Applied Physics Letters, 65 (5), 528-530, August 1, (1994).
161.
A. Mar, R. Helkey, J. E. Bowers, D. Mehuys and D. Welch, “Mode-locked Operation of
a Master Oscillator Power Amplifier,” Photonics Technology Letters, 6 (9), 1067-1070,
September, (1994).
162.
J.R. Karin, A.V. Uskov, R. L. Nagarajan, J. E. Bowers, and J. Mørk, “Carrier Heating
Dynamics in Semiconductor Waveguide Saturable Absorbers,” Applied Physics Letters,
65 (21), 2708-2710, November 21, (1994).
163.
K. Giboney, S. T. Allen, M. Rodwell, and J. E. Bowers, “Picosecond Measurements by
Free-Running Electro-Optic Sampling,” IEEE Photonics Technology Letters, 6 (11),
1353-1355, November, (1994).
164.
J. E. Bowers, and Y. G. Wey, “High Speed Photodetectors,” book chapter in the
Handbook of Optics, 2nd Edition, ed. by M. Bass, E. Van Stryland, D. Williams, and W.
Wolfe, Optical Society of America, (1994).
165.
R. Helkey and J. E. Bowers, “Mode Locked Semiconductor Lasers,” chapter in
Semiconductor Lasers: Past, Present and Future, ed. by G. Agrawal, American Institute
of Physics Press, (1994).
166.
P. Blixt, and J. E. Bowers, “An Optical Technique For Bit and Packet Synchronization,”
IEEE Photonics Technology Letters, 7 (1), 123-125, January, (1995).
167.
D. Babic, J. Dudley, K. Streubel, R. Mirin, J. E. Bowers, and E. Hu, “Double-Fused 1.52
µm Vertical-Cavity Lasers,” Applied Physics Letters, 66 (9), 1030-1032, February 27,
(1995).
168.
R. J. Ram, D. I. Babic, R. A. York, and J. E. Bowers, “Spontaneous Emission in
Microcavities With Distributed Mirrors,” J. Quantum Electronics, 31 (2), 399-410,
February, (1995).
169.
I.-H. Tan, C. Reaves, A. L. Holmes, E. Hu, J. E. Bowers, and S. DenBaars, “LowTemperature Pd Bonding of III-V Semiconductors,” Electronics Letters, 31 (7), 588-589,
March 30, (1995).
170.
D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, and E. L. Hu,
“Transverse-Mode and Polarisation Characteristics of Double-Fused 1.52-µm VerticalCavity Lasers,” Electronics Letters, 31 (8), 653-654, April 13, (1995).
171.
K. S. Giboney, R. L. Nagarajan, T. E. Reynolds, S. T. Allen, R. P. Mirin, M. J. Rodwell,
and J. E. Bowers, “Travelling-Wave Photodetectors with 172 GHz Bandwidth and 76
GHz Bandwidth-Efficiency Product,” IEEE Photonics Technology Letters, 7 (4), 412414, April, (1995).
172.
E. F. Goobar, R. J. Ram., L. A. Coldren, and J. E. Bowers, “Intensity Noise and Facet
Correlation in Fabry-Pérot Laser Diodes With Low Facet Reflectivities,” Applied Physics
Letters, 66 (25), 3419-3421, June 19, (1995).
173.
R. J. Helkey, W. X. Zou, A. Mar, D. B. Young, and J. E. Bowers, “High Yield 3.55-GHz
Repetition Rate Monolithic Mode-Locked Semiconductor Lasers,” Microwave and
Optical Technology Letters, 9 (3), 115-117, June 20, (1995).
174.
A. Mar, R. Helkey, W. X. Zou, D. B. Young, and J. E. Bowers, “High Power ModeLocked Semiconductor Lasers Using Flared Waveguides,” Applied Physics Letters, 66
(26), 3558-3560, June 26, (1995).
175.
A. V. Uskov, J. R. Karin, R. L. Nagarajan, and J. E. Bowers, “Dynamics of Carrier
Heating and Sweepout in Waveguide Saturable Absorbers,” Journal of Selected Topics in
Quantum Electronics, 1 (2), 552-561, June, (1995).
176.
S. S . Murtaza, I.-H. Tan, R. V. Chelakara, M. R. Islam, A. Srinivasan, K. A. Anselm, J.
E. Bowers, E. L. Hu, R. D. Dupuis, B. G. Streetman, and J. C. Campbell, “Highefficiency, Dual-wavelength, Wafer-fused Resonant-cavity Photodetetor Operating at
Long Wavelengths,” Photonics Technology Letters, 7 (6), 679-681, June, (1995).
177.
Y.-G. Wey, K. Giboney, J. E. Bowers, M. Rodwell, P. Silvestre, P. Thiagarajan, and G.
Robinson, “110 GHz GaInAs/InP Double Heterostructure p-i-n Photodetectors,” Journal
of Lightwave Technology, 13 (17), 1490-1499, July, (1995).
178.
U. Bhattacharya, M. J. Mondry, G. Hurtz, I.-H. Tan, R. Puella, M. Reddy, J. Guthrie, M.
J. Rodwell, and J. E. Bowers, “Transferred Substrate Schottky-collector Heterojunction
Bipolar Transistors: First Results and Scaling Laws for High fmax,” IEEE Electron Device
Letters, 16 (8), 357-359, August, (1995).
179.
C. C. Barron, C. J. Mahon, B. J. Thibeault, G. Wang, W. Jiang, L. A. Coldren, and J. E.
Bowers, “Millimeter-Wave Asymmetric Fabry-Perot Modulators,” Journal of Quantum
Electronics, 31 (8), 1484-1493, August, (1995).
180.
R. J. Ram, J. J. Dudley, and J. E. Bowers, “GaAs to InP Wafer Fusion,” Journal of
Applied Physics, 78 (6), 4227-4237, September 15, (1995).
181.
P. Blixt, J. E. Bowers, E. Bødtker, O. Sahlén, and R. S. Smith, “Optical Data
Synchronization Using Tunable Transmitters and Non-Zero Dispersion Links,” IEEE
Transactions on Microwave Theory and Techniques, 43 (9), 2214-2221, September,
(1995).
182.
E. Bodtker, and J. E. Bowers, “Techniques for Optical Demultiplexing in High Bit Rate
Communication Systems,” Journal of Lightwave Technology, 13 (9), 1809-1814,
September, (1995).
183.
I.-H. Tan, E. L. Hu, J. E. Bowers, “Modeling and Performance of Wafer-fused ResonantCavity Enhanced Photodetectors,” Journal of Quantum Electronics, 31 (10), 1863-1875,
October, (1995).
184.
D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, “RoomTemperature Continuous-Wave Operation of 1.54 µm Vertical-Cavity Lasers,” Photonics
Technology Letters, 7 (11), 1225-1227, November, (1995).
185.
R. P. Mirin, J. P. Ibbetson, K. Nishi, A. C. Gossard, and J. E. Bowers, “1.3 µm
Photoluminescence from InGaAs Quantum Dots on GaAs,” Applied Physics Letters, 67
(25), 3795-3797, December 18, (1995).
186.
I.-H. Tan, C-K Sun, K. S. Giboney, J. E. Bowers, and E. L. Hu, B. I. Miller, and R. J.
Capik, “120 GHz Long-Wavelength Low-Capacitance Photodetector with an Air-bridged
Coplanar Metal Waveguide,” Photonics Technology Letters, 7 (12), 1477-1479,
December, (1995).
187.
W. B. Jiang, and J. E. Bowers, “Ultrafast Vertical Cavity Semiconductor Lasers,” chapter
in Compact Sources of Ultrashort Pulses, ed. by I. Duling, Cambridge Press, (1995).
188.
D. I. Babic, R. P. Mirin, E. L. Hu, J. E. Bowers, “Characterization of Metal Mirrors on
GaAs,” Electronics Letters, 32 (4), 319-320, February 15, (1996).
189.
C.-K. Sun, G. Wang, J. E. Bowers, B. Brar, H.-R Blank, H. Kroemer, and M. H. Pilkuhn,
“Optical Investigations of the Dynamic Behavior of GaSb/GaAs Quantum Dots,” Applied
Physics Letters, 68 (11), 1543-1545, March 11, (1996).
190.
R. K. Sink, S. Keller, B. P. Keller, D. I. Babic, A. L. Holmes, D. Kapolnek, S. P.
DenBaars, J. E. Bowers, X. H. Wu, and J. S. Speck, “Cleaved GaN Facets by Wafer
Fusion of GaN to InP,” ***EmptyPublication***, 68 (15), 2147-2149, April 8, (1996).
191.
J. Piprek, D. I. Babic, and J. E. Bowers, “Numerical Analysis of 1.54 µm Double-Fused
Vertical-Caity Lasers Operating Continuous-Wave up to 33ºC,” Applied Physics Letters,
68 (19), 2630-2632, May 6, (1996).
192.
E. Bodtker, P. Blixt, K. Sink, and J. E. Bowers, “A Simple Fiber-Optic Multiplexer With
Wide Bit-rate Range,” Journal of Optical Communications, 17 (5), 169-171, May 17,
(1996).
193.
D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, M. G. Peters, E. L. Hu, J. E.
Bowers, “Fabrication and Characteristics of Double-Fused Vertical-Cavity Lasers,”
Optical and Quantum Electronics, 28, 475-485, May, (1996).
194.
P. Blixt, D. I. Babic, N. M. Margalit, T. E. Reynolds, J. E. Bowers, “Single-Mode , 1
Gbit/s Operation of Double-Fused Vertical Cavity Lasers at 1.54 µm,” Photonics
Technology Letters, 8 (5), May, (1996).
195.
R. J. Ram, E. Goobar, M. G. Peters, L. A. Coldren, and J. E. Bowers, “Spontaneous
Emission Factor in Post Microcavity Lasers,” Photonics Technology Letters, 8 (5), 599601, May, (1996).
196.
A. R. Hawkins, T. E. Reynolds, D. R. England, D. I. Babic, M. J. Mondry, K. Streubel,
and J. E. Bowers, “Silicon Heterointerface Photodetector,” Appl. Phys. Letters, 68 (26),
3692-3694, June 24, (1996).
197.
S. S. Murtaza, I.-H. Tan, J. E. Bowers, E L. Hu, K. A. Anselm, M. R. Islam, R. V.
Chelakara, R. D. Dupuis, B. G. Streetman, and J. C. Campbell, “High-Finesse ResonantCavity Photodetectors With An Adjustable Resonance Frequency,” Journal of Lightwave
Technology, 14 (6), 1081-1089, June, (1996).
198.
N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, D. E. Mars, J. E. Bowers, and E. L.
Hu, “Laterally Oxidized Long Wavelength CW Vertical Cavity Lasers,” Appl. Phys.
Letters, 69 (4), 471-472, July 22, (1996).
199.
M. Horita, D. A. Tauber, A. L. Holmes, Jr., B. I. Miller, and J. E. Bowers, “Metal Fused
Microstrip InGaAsP/InP MQW Lasers,” Technical Report of the Institute of Electronics,
Information, and Communication Engineers (IEICE of Japan), ED96-70, OPE96-36,
LQE96-38, 19-24, July, (1996).
200.
S. Z. Zhang, N. M. Margalit, T. E. Reynolds, and J. E. Bowers, “1.55 µm Vertical Cavity
Laser Transmission Over 200 km at 622 Mbit/s,” Electronic Letters, 32, 1597-1599,
August 15, (1996).
201.
R. P. Mirin, A. Gossard, and J. E. Bowers, “Room Temperature Lasing From InGaAs
Quantum Dots,” Electronics Letters, 32 (18), 1732-1733, August 29, (1996).
202.
N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, R. L. Naone, J. E. Bowers, and E.
L. Hu, “Submilliamp Long-Wavelength Vertical Cavity Lasers,” Electronics Letters, 32
(18), 1675-1677, August 29, (1996).
203.
C.-K. Sun, S. Keller, G. Wang, M. S. Minsky, J. E. Bowers, and S. P. DenBaars,
“Radiative Recombination Lifetime Measurements of InGaN Single-Quantum-Well,”
Applied Physics Letters, 69 (13), 1936, September 23, (1996).
204.
K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, “Travelling-Wave Photodetector
Design and Measurements,” IEEE Journ. of Selected Topics Quantum Electronics, 2 (1),
September, (1996).
205.
R. K. Sink, S. Keller, B. P. Keller, D. I. Babic, A. L. Holmes, D. Kapolnek, X. H. Wu, J.
S. Speck, S. P. DenBaars, and J. E. Bowers, “Cleaved Facets in GaN by Wafer Fusion of
GaN to InP,” Materials Research Society, Compound Semiconductor Electronics and
Photonics, 421, October 14, (1996).
206.
R. Yu, S. Beccue, P. J. Zampardi, R. L. Pierson, A. Petersen,. K. C. Wang, and J. E.
Bowers, “A Packaged Broad-Band Monolithic Variable Gain Amplifier Implemented in
AlGaAs/GaAs HBT Technology,” Journ. of Solid-State Circuits, 31 (10), 1380-1386,
October, (1996).
207.
P. Blixt, D. I. Babic, N. M. Margalit, K. Streubel, and J. E. Bowers, “Multimode Fiber
Transmission Using Room-Temperature Double-Fused 1.54µm Vertical-Cavity Lasers,”
IEEE Photonics Technology Letters, 8 (11), 1564-1566, November, (1996).
208.
S. L. Lee, D. A. Tauber, V. Jayaraman, M. E. Heimbuch, L. A. Coldren, and J. E.
Bowers, “Dynamic Responses of Widely Tunable Sampled Grating DBR Tunable
Lasers,” IEEE Photonics Technology Letters, 8 (12), December, (1996).
209.
W. Wu, A. R. Hawkins, and J. E. Bowers, “Frequency Response of Avalanche
Photodetectors with Separate Absorption and Multiplication Layers,” Journal of
Lightwave Tech, 14 (12), 2778-2785, December, (1996).
210.
S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P.
M. Petroff, and J. E. Bowers, “Temperature Effects on the Radiative Recombination in
Self-Assembled Quantum Dots,” Surface Science, 362 (N1-3), 778-782, (1996).
211.
A. R. Hawkins, W. Wu, P. Abraham, K. Streubel and J. E. Bowers, “High GainBandwidth-Product Silicon Heterointerface Photodetector,” Applied Physics Letters, 70
(3), 303-305, January 20, (1997).
212.
Y. M. Zhang, V. Borzenets, N. Dubash, T. Reynolds, Y. G. Wey and J. E. Bowers,
“Cryogenic Performance of a High-Speed GaInAs/InP p-i-n Photodiode,” Journal of
Lightwave Technology, 15 (3), March 3, (1997).
213.
S. Zhang, N. M. Margalit, T. E. Reynolds and J. E. Bowers, “1.54 µm Vertical-Cavity
Laser Transmission at 2.5 Gbit/s,” Photonics Technology Letters, 9 (3), 374-376, March,
(1997).
214.
C.-K. Sun, S. Keller, J. E. Bowers and S. P. DenBaars, “Femtosecond Studies of Carrier
Dynamics in InGaN,” Applied Physics Letters, 70 (15), 2004-2006, April 14, (1997).
215.
J. Piprek, D. I. Babic and J. E. Bowers, “Simulation and Analysis of 1.55 µm DoubleFused Vertical-Cavity Lasers,” Journal of Applied Physics, 81 (8), 3382-3390, April 15,
(1997).
216.
N. M. Margalit, J. Piprek, S. Zhang, D. Babic, K. Streubel, R. P. Mirin, J. R.
Wesselmann, J. E. Bowers and E. L. Hu, “64 °C Continuous-Wave Operation of 1.5-µm
Vertical-Cavity Laser,” IEEE Journal of Selected Topics in Quantum Electronics, 3 (2),
April, (1997).
217.
B. F. Levine, A. R. Hawkins, S. Hiu, B. J. Tseng, C. A. King, L. A. Gruezke, R. W.
Johnson, D. R. Zolnowski and J. E. Bowers, “20 GHz High Performance Si/InGaAs PIN
Photodetector,” Applied Physics Letters, 70 (18), 2449-2451, May 5, (1997).
218.
N. M. Margalit, S. Z. Zhang and J. E. Bowers, “Vertical Cavity Lasers for Telecom
Applications,” Invited Paper, IEEE Communications Magazine Special issue on
Lightwave Technology, May, (1997).
219.
P. Corvini and J. E. Bowers, “Model for Trap Filling and Avalanche Breakdown in SemiInsulating Fe:InP,” Journal of Applied Physics, 82 (1), 259-269, June 15, (1997).
220.
A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Jr., Y.-L. Chang, P.
Abraham, J. E. Bowers, and E. L. Hu, “Wafer Fusion: Materials Issues and Device
Results,” IEEE Journal of Selected Topics in Quantum Electronics, 3 (3), 943-951, June,
(1997).
221.
C.-K. Sun, Stacia Keller, T.-L. Chiu, Gary Wang, M. S. Minsky, John E. Bowers and S.
P. DenBaars, “Well-Width Dependent Studies of InGaN-GaN Single-Quantum Wells
Using Time-Resolved Photoluminescence Techniques,” IEEE Journal of Selected Topics
in Quantum Electronics, 3 (3), 731-738, June, (1997).
222.
C.-K. Sun, T.-L. Chiu, S. Keller, G. Wang, M. S. Minsky, S. P. DenBaars and J. E.
Bowers, “Time-resolved Photoluminescence Studies of InGaN/GaN Single-quantumwells at Room Temperature,” Applied Physics Letters, 71 (4), 425-427, July 28, (1997).
223.
D. I. Babic, J. Piprek, K. Streubel, R. P. Mirin, N. M. Margalit, D. E. Mars, J. E. Bowers
and E. L. Hu, “Design and Analysis of Double-Fused 1.55µm Vertical-Cavity Lasers,”
IEEE Journal of Quantum Electronics, 33 (8), 1369-1383, August, (1997).
224.
K. S. Giboney, M. J. W. Rodwell and J. E. Bowers, “Travelling-Wave Photodetector
Theory,” IEEE Transactions on Microwave Theory and Techniques, 45 (8), August,
(1997).
225.
R. Mirin, J. Ibbetson, J. E. Bowers and A. Gossard, “Overgrowth of InGaAs Quantum
Dots Formed by Alternating Molecular Beam Epitaxy,” Journal of Crystal Growth,
August, (1997).
226.
W. Wu, A. Hawkins and J. E. Bowers, “Design of Silicon Hetero-Interface
Photodetectors,” Journal of Lightwave Technology, 15 (8), 1608-1615, August, (1997).
227.
W. Wu, A. R. Hawkins and J. E. Bowers, “Analysis of the Effect of an Electric-Field
Profile on the Gain-Bandwidth Product of Avalanche Photodetectors,” Optics Letters, 22
(5), 1183-1185, August, (1997).
228.
B. F. Levine, A. R. Hawkins, S. Hiu, J. P. Reilly, B. J. Tseng, C. A. King, L. A. Gruezke,
R. W. Johnson, D. R. Zolnowski and J. E. Bowers, “Characterization of Wafer Bonded
Photodetectors Fabricated Using Various Annealing Temperatures and Ambients,”
Applied Physics Letters, 71 (11), September 15, (1997).
229.
A. Shakouri and J. E. Bowers, “Heterostructure Integrated Thermionic Coolers,” Applied
Physics Letters, 71 (9), 1234-1236, September, (1997).
230.
M. Nuss & J. E. Bowers, “Ultrafast Electronics and Optoelectronics” Trends in Optics
and Photonics, 13, September, (1997).
231.
Y.-J. Chiu, S. Fleischer, D. Lasaosa and J. E. Bowers, “Ultrafast (370 GHz Bandwidth)
P-I-N Traveling Wave Photodetector Using Low-temperature-grown GaAs,” Applied
Physics Letters, 71 (17), 2508-2510, October 27, (1997).
232.
J. E. Schramm, D. I. Babic, E. L. Hu, J. E. Bowers, and J. L. Merz, “Fabrication of HighAspect-Ratio InP-Based Vertical-Cavity Laser Mirrors Using CH4/H2/O2/Ar Reactive
Ion Etching,” Journal of Vacuum Science and Technology, 15 (6), 2031-2036,
November/December, (1997).
233.
D. Babic, G. Dohler, J. E. Bowers, and E. Hu, “Isotype Heterojunctions With Flat
Valence or Conduction Band,” IEEE Journal of Quantum Electronics, 33 (12), 21952198, December, (1997).
234.
D. Tauber and J. E. Bowers, “Dynamics of Wide Bandwidth Semiconductor,” Journal of
High Speed Electronics and Systems, 8 (3), 377-416, December, (1997).
235.
D. A. Tauber, and J. E. Bowers, “Dynamics of Wide Bandwidth Semiconductor Lasers,”
International Journal of High Speed Electronics and Systems, 8 (3), (1997).
236.
D. I. Babic, J. E. Bowers and E. L. Hu, “Wafer Fusion for Surface-Normal
Optoelectronic Device Applications,” International Journal of High Speed Electronics
and Systems, 8 (2), (1997).
237.
C.-K. Sun, I. Tan and J. E. Bowers, “Ultrafast Transport Dynamics of p-i-n
Photodetectors Under High Power Illumination,” IEEE Photonics Technology Letters, 10
(1), 135-137, January, (1998).
238.
A. Shakouri, E. Y. Lee, D.L. Smith, V. Narayanamurti and J. E. Bowers, “Thermoelectric
Effects in Submicron Heterostructure Barriers,” Microscale Thermophysical
Engineering, 2, 37-47, January/February, (1998).
239.
N. M. Margalit, K. A. Black, Y.-J. Chiu, E. R. Hegblom, K. Streubel, P. Abraham, M.
Anzlowar, J. E. Bowers and E.L. Hu, “Top-emitting Double-fused 1.5 mm Vertical
Cavity Lasers,” Electronics Letters, 34 (3), 285-287, February, (1998).
240.
A. V. Uskov, J. R. Karin, J. E. Bowers and J. McInerney, “Intraband Carrier Kinetics and
Picosecond Pulse Shaping in a Field-Enhanced Semiconductor Absorbers,” Optics
Letters, 23 (5), 376-378, March 1, (1998).
241.
M.S. Minsky, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller and S. P.
DenBaars, “Characterization of High-Quality InGaN/GaN Multiquantum Wells with
Time-Resolved Photoluminescence,” Applied Physics Letters, 72 (9), 1066-1068, March
2, (1998).
242.
J. Piprek, Y. A. Akulova, D. I. Babic, L. A. Coldren and J. E. Bowers, “Minimum
Temperature Sensitivity of 1.55 mm Vertical-Cavity Lasers at -30nm Gain Offset,”
Applied Physics Letters, 72 (15), 1814-1816, April 13, (1998).
243.
S.-Y. Hu, S. Z. Zhang, J. Ko, J. E. Bowers and L. A. Coldren, “1.5 Gbit/s/Channel
Operation of Multiplewavelength Vertical-Cavity Photonic Integrated Emitter Arrays for
Low-Cost Multimode WDM Local-Area Networks,” Electronic Letters, 34 (8), 768-769,
April 16, (1998).
244.
J. R. Wesselmann, N. M. Margalit and J. E. Bowers, “Analog Measurements of Long
Wavelength Vertical-Cavity Lasers,” Applied Physics Letters, April 27, (1998).
245.
D. Tauber, M. Horita, J. Piprek, P. Abraham, A. Holmes and J. E. Bowers, “The
Microstrip Laser,” IEEE Photonics Technology Letters, 10 (4), 478-480, April, (1998).
246.
B. Liu, A. Shakouri, P. Abraham, B.-G. Kim, A. W. Jackson and J. E. Bowers, “Fused
Vertical Couplers,” Applied Physics Letters, 72 (21), 2637-2638, May 25, (1998).
247.
A. C. Abare, M. P. Mack, M. Hansen, R. K. Sink, P. Kozodoy, S. Keller, J. S. Speck, J.
E. Bowers, U. K. Mishra, L. A. Coldren, and S.P. DenBaars, “Cleaved and Etched Facet
Nitride Laser Diodes,” IEEE Journal of Selected Topics in Quantum Electronics, 4 (3),
505-509, May/June, (1998).
248.
Y.-J. Chiu, S. Z. Zhang, S. B. Fleischer, J. E. Bowers and U. K. Mishra, “GaAs-Based,
1.5mm High Speed, High Saturation Power, Low-Temperature Grown GaAs pin
Photodetector,” Electronics Letters, 34 (12), 1253-1255, June 11, (1998).
249.
S. Keller, B. P. Keller, M.S. Minsky, J. E. Bowers, U. K. Mishra, S. P. DenBaars, W.
Seifert, “Growth and properties of InGaN nanoscale islands on GaN,” Journal of Crystal
Growth, 189/190, 29-32, June, (1998).
250.
S. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S.
Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke and S. P.
DenBaars, “Effects of Si-Doping in the Barriers of InGaN Multiquantum Well PurplishBlue Laser Diodes,” Applied Physics Letters, 73 (4), 496-498, July 27, (1998).
251.
Y.-J. Chiu, S. B. Fleischer and J. E. Bowers, “High Speed Low-Temperature-Grown
GaAs p-i-n Traveling Wave Photodetector,” IEEE Photonics Technology Letters, 10 (7),
1012-1014, July, (1998).
252.
B. Kim, A. Shakouri, B. Liu, and J. E. Bowers, “Improved Extinction Ratio in Ultra Short
Directional Couplers Using Asymmetric Structures,” Japanese Journal of Applied
Physics, 37 (8A), 930-932, August 1, (1998).
253.
K. A. Black, P. Abraham, N. M. Margalit, E. R. Hegblom, Y-J. Chiu, J. Piprek, J. E.
Bowers and E. L. Hu, “Double-fused 1.5mm Vertical Cavity Lasers with a Record High
To of 132K at Room Temperature,” Electronics Letters, 34 (20), 1947-1949, October 1,
(1998).
254.
S. Chichibu, A. Abare, M. Minsky, S. Keller, S. Fleischer, J. E. Bowers, E. Hu, U. K.
Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective Band Gap Inhomogeneity
and Piezoelectric Field in InGaN/GaN Multiquantum Well Structures,” Applied Physics
Letters, 73 (14), 2006-2008, October 5, (1998).
255.
B. Liu, A. Shakouri, P. Abraham, and J. E. Bowers, “Fused Vertical Coupler Switches,”
Electronics Letters, 34 (22), 2159-2161, October 29, (1998).
256.
M. S. Minsky, S. F. Chichibu, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S.
Keller, U. K. Mishra, and S. P. DenBaars, “Optical Properties of InGaN/GaN Quantum
Wells with Si Doped Barriers,” Japanese Journal of Applied Physics, 37 (11B), 13621364, November 15, (1998).
257.
A. V. Uskov, J. R. Karin, J. E. Bowers, J. McInerney, and J. LeBihan, “Effects of Carrier
Cooling and Carrier Heating in Saturation Dynamics and Pulse Propagation through Bulk
Semiconductor Absorbers,” IEEE Journal of Quantum Electronics, 34 (11), 2162-2171,
November, (1998).
258.
A. Shakouri, B. Liu, B-G. Kim, P. Abraham, A. W. Jackson, A. C. Gossard, and J. E.
Bowers, “Wafer-Fused Optoelectronics for Switching,” Journal of Lightwave
Technology, 16 (12), 2236-2242, December, (1998).
259.
T. Liljeberg and J. E. Bowers, “High Speed Semiconductor Lasers and Photodetectors,”
chapter in Electro-Optics Handbook, 2nd edition, ed. by R.W. Waynant and M. Ediger,
McGraw-Hill Publishers, (1998).
260.
K. A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes Jr., Y.-L. Chang,
P. Abraham, J. E. Bowers and E. L. Hu, “Fusion Bonding: Hetero-interfacial Materials
Analysis and Device Application,” chapter in Heterogeneous Integration: Systems on a
Chip, Vol. CR70, A. Husain, M. Fallahi, eds., SPIE, Bellingham, Washington, (1998).
261.
R. P. Mirin, A. C. Gossard, and J. E. Bowers, “Characterization of InGaAs Quantum Dot
Lasers With a Single Quantum Dot Layer As An Active Region,” Physica E LowDimensional Systems and Nanostructures, 2, 738-742, (1998).
262.
A. Shakouri, C. LaBounty, J. Piprek, P. Abraham and J. E. Bowers, “Thermionic
Emission Cooling in Single Barrier Heterostructures,” Applied Physics Letters, 74 (1),
88-89, January 4, (1999).
263.
J. Piprek, P. Abraham, and J. E. Bowers, “Carrier Nonuniformity Effects on the Internal
Efficiency of Multiquantum-Well Lasers,” Applied Physics Letters, 74 (4), 489-491,
January 25, (1999).
264.
B. Liu, A. Shakouri, P. Abraham, Y.-J. Chiu, S. Zhang, and J. E. Bowers, “Fused InPGaAs Vertical Coupler Filters,” IEEE Photonics Technology Letters, 11 (1), 93-95,
January, (1999).
265.
S. Z. Zhang, Y.-J. Chiu, P. Abraham, and J. E. Bowers, “25-GHz Polarization-Insensitive
Electroabsorption Modulators with Traveling-Wave Electrodes,” IEEE Photonics
Technology Letters, 11 (2), 191-193, February, (1999).
266.
P. Abraham, J. Piprek, S. P. Denbaars, and J. E. Bowers, “Improvement of Internal
Quantum Efficiency in 1.55mm Laser Diodes with InGaP Electron Stopper Layer,”
Japanese Journal of Applied Physics, Part 1, 38 (2B), 1239-1242, February, (1999).
267.
Y. M. Zhang, J. Piprek, N. Margalit, M. Anzlowar, and J. E. Bowers, “Cryogenic
Performance of Double Fused 1.5mm Vertical Cavity Lasers,” IEEE Journal of
Lightwave Technology, 17 (3), 503-508, March 3, (1999).
268.
S. Chichibu, H. Marchand, M. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B.
Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S.P. DenBaars, T. Deguchi, T.
Sota, and S. Nakamura, “Emission Mechanisms of Bulk GaN and InGaN Quantum Wells
Prepared by Lateral Epitaxial Overgrowth,” Applied Physics Letters, 74 (10), 1460-1462,
March 8, (1999).
269.
B. Liu, A. Shakouri, P. Abraham, Y.-J. Chiu, and J. E. Bowers, “Fused III-V Vertical
Coupler Filter with Reduced Polarisation Sensitivity,” Electronics Letters, 35 (6), 481482, March 18, (1999).
270.
B. Liu, A. Shakouri, and J. E. Bowers, “Characteristic Equations for Different ARROW
Structures,” Optical and Quantum Electronics, 31, 1267-1276, March 31, (1999).
271.
J. Piprek, P. Abraham, and J. E. Bowers, “Cavity Length Effects on Internal Loss and
Quantum Efficiency of Multi-quantum-Well Lasers,” IEEE Journal of Selected Topics in
Quantum Electronics, 5 (3), 643-647, May/June, (1999).
272.
V. Kaman, S. Z. Zhang, A. J. Keating, and J. E. Bowers, “High-Speed Operation of
Travelling-Wave-Electro-Absorption Modulator,” Electronics Letters, 35 (12), 993-995,
June 10, (1999).
273.
B. Liu, A. Shakouri, P. Abraham, and J. E. Bowers, “Push-Pull Fused Vertical Coupler
Switch,” IEEE Photonics Technology Letters, 11 (6), 662-664, June, (1999).
274.
B. Liu, A. Shakouri, P. Abraham, and J. E. Bowers, “Vertical Coupler With Separated
Inputs and Outputs Fabricated Using Double-Sided Process,” Electronics Letters, 35
(18), 1552-1554, September 2, (1999).
275.
C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard,
“Subpicosecond Carrier Dynamics in Low-Temperature Grown GaAs on Si Substrates,”
Applied Physics Letters, 75 (17), 2575-2577, October 25, (1999).
276.
V. Kaman, T. Reynolds, A. Petersen, and J. E. Bowers, “A 100-kHz to 50-GHz Traveling
Amplifier IC Module,” IEEE Microwave and Guided Wave Letters, 9 (10), 416-418,
October, (1999).
277.
G. Zeng, A. Shakouri, C. LaBounty, G. Robinson, E. Croke, P. Abraham, X. Fan, H.
Reese, and J. E. Bowers, “SiGe Micro-Cooler,” Electronics Letters, 35 (24), 2146-2147,
November 25, (1999).
278.
C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, A. C. Gossard, J.-W. Dong, and
C. J. Palstrom, “Self-assembled ErAs Islands in GaAs: Growth and Subpicosecond
Carrier Dynamics,” Applied Physics Letters, 75 (22), 3548-3550, November 29, (1999).
279.
H. Schmidt, A. C. Abare, J. E. Bowers, S. P. Denbaars, and A. Imamoglu, “Large
Interband Second-Order Susceptibilities in InxGa1-xN/GaN Quantum Wells,” Applied
Physics Letters, 75 (23), 3611-3613, December 6, (1999).
280.
R. L. Nagarajan and J. E. Bowers, “High-Speed Lasers,” Chapter in Semiconductor
Lasers Vol 1, ed. by Eli Kapon, Academic Press, 177-290, (1999).
281.
D.I. Babic, J. Piprek, and J. E. Bowers, “Long-Wavelength Vertical-Cavity Lasers,”
Chapter in Vertical-Cavity Surface-Emitting Lasers, ed. by C. Wilmsen, H. Temkin, and
L. Coldren, Cambridge University Press, 303-333, (1999).
282.
S. F. Chichibu, A. C. Abare, M. P. Mack, M. S. Minsky, T. Deguchi, D. Cohen, P.
Kozodoy, S. B. Fleischer, S. Keller, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A.
Coldren, S. P. Denbaars, K. Wada, T. Sota, and S. Nakamura, “Optical Properties of
InGaN Quantum Wells,” Materials Science & Engineering B, 59, 298-306, (1999).
283.
P. Abraham, J. Piprek, S. P. Denbaars, and J. E. Bowers, “Study of Temperature Effects
on Loss Mechanisms in 1.55 mm Laser Diodes with In0. 81Ga0.19P Electron Stopper
Layer,” Semiconductor Science and Technology, 14, 419-424, (1999).
284.
B. Liu, A. Shakouri, P. Abraham and J. E. Bowers, “A Wavelength Multiplexer Using
Cascaded Three-Dimensional Vertical Couplers,” Applied Physics Letters, 76 (3), 282284, January 17, (2000).
285.
B.-E. Olsson, P. Ohlen, L. Rau, G. Rossi, O. Jerphagnon, R. Doshi, D.S. Humphries, D.J.
Blumenthal, V. Kaman, and J.E. Bowers, “Wavelength routing of 40 Gbit/s packets with
2.5 Gbit/s header erasure/rewriting using all-fibre wavelength converter,” Electronics
Letters, 36 (4), 345-347, February 17, (2000).
286.
A. Keating, K.A. Black, A. Karim, Y.-J. Chiu, P. Abraham, C. Harder, E. Hu, and J. E.
Bowers, “High-Temperature Optically Pumped 1.55-mm VCSEL Operating at 6 Gb/s,”
Photonics Technology Letters, 12 (2), 116-118, February, (2000).
287.
J. Piprek, P. Abraham, and J. E. Bowers, “Self-Consistent Analysis of High-Temperature
Effects on Strained-Layer Multiquantum-Well InGaAsP-InP Lasers,” IEEE Journal of
Quantum Electronics, 36 (3), 366-374, March, (2000).
288.
B. Liu, A. Shakouri, P. Abraham, and J. E. Bowers, “Optical Add/Drop Multiplexers
Based on X-Crossing Vertical Coupler Filters,” IEEE Photonics Technology Letters, 12
(4), 410-412, April, (2000).
289.
V. Kaman, Y.-J. Chiu, S. Z. Zhang, J. E. Bowers, “3.7ps Pulse Generation at ³ 30 GHz by
Dual-Drive Electroabsorption Modulator,” Electronics Letters, 36 (13), 1130-1132, June
22, (2000).
290.
V. Kaman, A. Keating, S. Z. Zhang, and J. E. Bowers, “Simultaneous OTDM
Demultiplexing and Detection Using an Electroabsorption Modulator,” IEEE Photonics
Technology Letters, 12 (6), 711-713, June, (2000).
291.
V. Kaman and J. E. Bowers, “120 Gbit/s OTDM System Using Electroabsorption
Transmitter and Demultiplexer Operating at 30 GHz,” Electronics Letters, 36 (17), 14771479, August 17, (2000).
292.
E. S. Björlin, B. Riou, A. Keating, P. Abraham, Y.-J. Chiu, J. Piprek, and J. E. Bowers,
“1.3mm Vertical-Cavity Amplifier,” Photonics Technology Letters, 12 (8), 951-953,
August, (2000).
293.
V. Kaman, Y.-J. Chiu, T. Liljeberg, S. Z. Zhang, and J.E. Bowers, “Compact 40 Gbit/s
Demultiplexing Receiver Based on Integrated Tandem Electroabsorption Modulators,”
Electronics Letters, 36 (23), November 9, (2000).
294.
V. Kaman, Y.-J. Chiu, T. Liljeberg, S. Z. Zhang, and J.E. Bowers, “Integrated Tandem
Traveling-Wave Electroabsorption Modulators for > 100 Gbit/s OTDM Applications,”
IEEE Photonics Technology Letters, 12 (11), 1471-1473, November, (2000).
295.
A. Karim, K. A. Black, P. Abraham, D. Lofgreen, Y.-J. Chiu, J. Piprek and J. E. Bowers,
“Superlattice Barrier 1528-nm Vertical-Cavity Laser with 85°C Continuous-Wave
Operation,” IEEE Photonics Technology Letters, 12 (11), 1438-1440, November, (2000).
296.
C. LaBounty, A. Shakouri, P. Abraham, J. E. Bowers, “Monolithic Integration of ThinFilm Coolers with Optoelectronic Devices,” Optical Engineering Journal, 39 (11), 28472851, November, (2000).
297.
A. Karim, E. S. Björlin, J. Piprek, and J. E. Bowers, “Long-Wavelength Vertical-Cavity
Lasers and Amplifiers,” Invited Paper, Journal on Selected Topics in Quantum
Electronics, 6 (6), 1244-1253, November/December, (2000).
298.
J. Geske, V. Jayaraman, T. Goodwin, M. Culick, M. MacDougal, T. Goodnough, D.
Welch, and J.E. Bowers, “2.5-Gb/s Transmission Over 50km with a 1.3mm VerticalCavity Surface-Emitting Laser,” IEEE Photonics Technology Letters, 12 (12), 17071709, December, (2000).
299.
M. Raburn, B. Liu, P. Abraham, and J. E. Bowers, “Double-Bonded InP-InGaAsP
Vertical Coupler 1:8 Beam Splitter,” IEEE Photonics Technology Letters, 12 (12), 16391641, December, (2000).
300.
D.J Blumenthal, B.-E Olsson, G. Rossi, T.E. Dimmick, L. Rau, M. Masanovic, O.
Lavrova, R. Doshi, O. Jerphagnon, J.E. Bowers, V. Kaman, L.A. Coldren, and J. Barton,
“All-Optical Label Swapping Networks and Technologies,” Journal of Lightwave
Technology, 18 (12), 2058-2075, December, (2000).
301.
J. Piprek, K. Takiguchi, K. A. Black, E. L. Hu, and J. E. Bowers, “Harmonic Distortion
in 1.55mm Vertical-Cavity Lasers,” Photonics Technology Letters, 12 (12), 1686-1688,
December, (2000).
302.
X. Fan, G. Zeng, E. Croke, G. Robinson, C. LaBounty, A. Shakouri, and J. E. Bowers,
“SiGe/Si Superlattice Coolers,” Invited Paper, Physics of Low-Dimensional Structures
Journal, 5 (6), 1-10, (2000).
303.
S. T. Huxtable, C. LaBounty, A. Shakouri, P. Abraham, Y.-J. Chiu, X. Fan, J. E. Bowers,
and A. Majumdar, “Thermal Conductivity of Indium Phosphide Based Superlattices,”
Microscale Thermophysical Engineering, 4, 197-203, (2000).
304.
C. Kadow, A. W. Jackson, A. C. Gossard, J. E. Bowers, S. Matsura, and G. A. Blake,
“Self-Assembled ErAs Islands in GaAs for THz Applications,” Physica E, 7, 97-100,
(2000).
305.
N. Y. Jin-Phillipp, W. Sigle, A. Black, D. Babic, J.E. Bowers, E.L. Hu, and M. Rühle,
“Interface of Directly Bonded GaAs and InP,” Journal of Applied Physics, 89 (2), 10171024, January 15, (2001).
306.
X. Fan, G. Zeng, E. Croke, C. LaBounty, C.C. Ahn, D. Vashee, A. Shakouri, and J.E.
Bowers, “High Cooling Power Density SiGe/Si Micro-Coolers,” Electronics Letters, 37
(2), 126-127, January 18, (2001).
307.
J. Piprek, E. S. Björlin, and J.E. Bowers, “Design and Analysis of Vertical-Cavity
Semiconductor Optical Amplifiers,” Journal of Quantum Electronics, 37 (1), 127-134,
January, (2001).
308.
E.S. Björlin, B. Riou, P. Abraham, J. Piprek, Y.-J. Chiu, K. A. Black, A. Keating, and J.
E. Bowers, “Long Wavelength Vertical-Cavity Semiconductor Optical Amplifiers,”
Journal of Quantum Electronics, 37 (2), 274-281, February, (2001).
309.
J. Piprek, E. S. Björlin and J. E. Bowers, “Optical gain-bandwidth product of verticalcavity laser amplifiers,” Electronics Letters, 37 (5), March 1, (2001).
310.
X. Fan, G. Zeng, C. LaBounty, J. E. Bowers, E. Croke, C. Ahn, S. Huxtable, A.
Majumar, and A. Shakouri, “SiGeC/Si Superlattice Microcoolers,” Applied Physics
Letters, 78 (11), 1850-1852, March 12, (2001).
311.
A. Karim, P. Abraham, D. Lofgreen, Y.-J. Chiu, J. Piprek and J. E. Bowers, “WaferBonded 1.55-mm Vertical Cavity Laser Arrays for Wavelength Division Multiplexing,”
Electronics Letters, 37 (7), 431-432, March, (2001).
312.
A. Karim, P. Abraham, D. Lofgreen, Y.-J. Chiu, J. Piprek and J. E. Bowers, “1.55-mm
Vertical-Cavity Laser Arrays for Wavelength-Division Multiplexing,” IEEE Journal on
Selected Topics in Quantum Electronics, 7 (2), 178-183, March/April, (2001).
313.
C. LaBounty, A. Shakouri, and J. E. Bowers, “Design and Characterization of Thin Film
Micro-Coolers,” Journal of Applied Physics, 89 (7), 4059-4064, April 1, (2001).
314.
A. Karim, P. Abraham, D. Lofgreen, Y.-J. Chiu, J. Piprek, and J. E. Bowers, “Wafer
Bonded 1.55 mm Vertical-Cavity Lasers with Continuous-Wave Operation Up to
105°C,” Applied Physics Letters, 78 (18), 2632-2633, April 30, (2001).
315.
M. Raburn, B. Liu, Y. Okuno and J. E. Bowers, “InP-InGaAsP Wafer-Bonded Vertically
Coupled X-Crossing Multiple Channel Optical Add-Drop Multiplexer,” IEEE Photonics
Technology Letters, 13 (6), 579-581, June, (2001).
316.
J.-W. Shi, K.-G. Gan, Y.-J. Chiu, Y.-H. Chen, C.-K. Sun, Y.-J. Yang, and J. E. Bowers,
“Metal-Semiconductor-Metal Traveling-Wave Photodetectors,” IEEE Photonics
Technology Letters, 16 (6), 623-625, June, (2001).
317.
Y.-J. Chiu, V. Kaman, S. Zhang and J. E. Bowers, “Distributed Effects Model for
Cascaded Traveling-Wave Electroabsorption Modulator,” IEEE Photonics Technology
Letters, 13 (8), 791-793, August, (2001).
318.
J. Geske, Y. Okuno, J. E. Bowers and V. Jayaraman, “Vertical and Lateral
Heterogeneous Integration,” Applied Physics Letters, 79 (12), 1760-1762, September 17,
(2001).
319.
S. Gee and J. E. Bowers, “Ultraviolet Picosecond Optical Pulse Generation from a ModeLocked InGaN Laser Diode,” Applied Physics Letters, 79 (13), 1951-1952, September
24, (2001).
320.
K. A. Black, E. S. Björlin, J. Piprek, E.L. Hu and J.E. Bowers, “Small-Signal Frequency
Response of Long-Wavelength Vertical-Cavity Lasers,” IEEE Photonics Technology
Letters, 13 (10), 1049-1051, October, (2001).
321.
E. S. Björlin, J. Geske, and J. E. Bowers, “Optically Preamplified Receiver at 10 Gbit/s
Using Vertical-Cavity SOA,” Electronics Letters, 37 (24), 1474-1475, November 22,
(2001).
322.
B. Liu, A. Shakouri and J. E. Bowers, “Passive Microring-Resonator-Coupled Lasers,”
Applied Physics Letters, 79 (12), 3561-3563, November 26, (2001).
323.
E. S. Björlin, A. Dahl, J. Piprek, P. Abraham, Y.-J. Chiu and J. E. Bowers, “VerticalCavity Amplifying Modulator at 1.3 mm,” IEEE Photonics Technology Letters, 13 (12),
1271-1273, December, (2001).
324.
E. S. Björlin, J. Piprek, S. Gee, Y.-J. Chiu, J.E. Bowers, A. Dahl and P. Abraham, “1.3
mm Vertical-Cavity Amplifying Switch,” OSA Trends in Optics and Photonics, 60, 154160, (2001).
325.
E. S. Björlin and J. E. Bowers, “Noise Figure of Vertical-Cavity Semiconductor Optical
Amplifiers,” IEEE Journal of Quantum Electronics, 38 (1), 61-66, January, (2002).
326.
S. T. Huxtable, A. R. Abramson, C.-L. Tien, A. Majumdar, C. LaBounty, X. Fan, G.
Zeng, J. E. Bowers, A. Shakouri and E. T. Croke, “Thermal Conductivity of Si/SiGe and
SiGe/SiGe Superlattices,” Applied Physics Letters, 80 (10), 1737-1739, March 11,
(2002).
327.
J.-W. Shi, Y.-H. Chen, K.-G. Gan, Y.-J. Chiu, C.-K. Sun, J. E. Bowers, “High-Speed and
High-Power Performances of LTG-GaAs Based Metal-Semiconductor-Metal TravelingWave-Photodetectors in 1.3-μm Wavelength Regime,” IEEE Photonics Technology
Letters, 14 (3), 363-365, March, (2002).
328.
H.-F. Chou, Y.-J. Chiu and J.E. Bowers, “40GHz Optical Pulse Generation Using
Sinusoidally-Driven Traveling-Wave Electroabsorption Modulator,” Electronics Letters,
38 (8), 379-380, April 11, (2002).
329.
K.-G. Gan, J.-W. Shi, Y.-H. Chen, C.-K. Sun, Y.-J. Chiu, and J. E. Bowers, “Ultrahigh
Power-bandwidth-product Performance of Low-temperature-grown-GaAs based metalsemiconductor-metal traveling-wave photodetectors,” Applied Physics Letters, 80 (21),
4054-4056, May 27, (2002).
330.
Bin Liu, A. Shakouri, and J. E. Bowers, “Wide Tunable Double Ring Resonator Coupled
Lasers,” IEEE Photonics Technology Letters, 14 (5), 600-602, May, (2002).
331.
R. Helkey, S. Adams, J. Bowers, T. Davis, O. Jerphagnon, V. Kaman, A. Keating, B. Liu,
C. Pusarla, D. Xu, S. Yuan, and X. Zheng, “Design of Large MEMS-Based Photonic
Switches,” Optic & Photonics News, May, (2002).
332.
Y.-J. Chiu, H.-F. Chou, V. Kaman, P. Abraham, and J. E. Bowers, “High Extinction
Ratio and Saturation Power Traveling-Wave Electroabsorption Modulator,” IEEE
Photonics Technology Letters, 14 (6), 792-794, June, (2002).
333.
M. Raburn, B. Liu, K. Rauscher, Y. Okuno, N. Dagli and J. E. Bowers, “3D Photonic
Circuit Technology,” Invited Paper, Journal of Selected Topics in Quantum Electronics,
8 (4), 935-942, July/August, (2002).
334.
J.-W. Shi, K.-G. Gan, Y.-H. Chen, C.-K. Sun, Y.-J. Chiu, and J.E Bowers,, “UltrahighPower-Bandwidth Product and Nonlinear Photoconductance Performances of LowTemperature-Grown GaAs-Based Metal-Semiconductor-Metal Traveling-Wave
Photodetectors,” Photonics Technology Letters, 14 (11), 1587-1589, November, (2002).
335.
L. Rau, W. Wang, B.-E. Olsson, Y.-J. Chiu, H.-F. Chou, D. J. Blumenthal, and J. E.
Bowers, “Simultaneous All-Optical Demultiplexing of a 40-Gb/s Signal to 4X10 Gb/s
WDM Channels Using an Ultrafast Fiber Wavelength Converter,” IEEE Photonics
Technology Letters, 14 (12), 1725-1727, December, (2002).
336.
J. Piprek and J. E. Bowers, “Analog Modulation of Semiconductor Lasers,” chapter in RF
Photonic Technology in Optical Fiber Links, ed. by W. S. C. Chang, Cambridge
University Press, (2002).
337.
H.-F. Chou, Y.-J. Chiu, L. Rau, W. Wang, S. Rangarajan, J.E. Bowers, and D.J.
Blumenthal, “Low Power Penalty 80 to 10 Gbit/s OTDM Demultiplexer using Standingwave Enhanced Electroabsorption Modulator with Reduced Driving Voltage,”
Electronics Letters, 39 (1), 94-95, January, (2003).
338.
D. Blumenthal, J.E. Bowers, H.-F. Chou, H. Poulsen, S. Rangarajan, L. Rau, and W.
Wang, “Optical Signal Processing for Optical Packet Switching Networks,” IEEE Optical
Communications Magazine, 523-529, February, (2003).
339.
J. Geske, Y.L. Okuno, D. Leonard, and J.E. Bowers, “Long-Wavelength TwoDimensional WDM Vertical Cavity Surface-Emitting Laser Arrays Fabricated by
Nonplanar Wafer Bonding,” IEEE Photonics Technology Letters, 15 (2), 179-181,
February, (2003).
340.
H.-F. Chou, Y.-J. Chiu, and J.E. Bowers, “Standing-Wave Enhanced Electroabsorption
Modulator for 40-GHz Optical Pulse Generation,” IEEE Photonics Technology Letters,
15 (2), 215-217, February, (2003).
341.
X. Zheng, V. Kaman, S. Yuan, Y. Xu, O. Jerphagnon, A. Keating, R. C. Anderson, H. N.
Poulsen, B. Liu, J. R. Sechrist, C. Pusarla, R. Helkey, D. J. Blumenthal, and J. E. Bowers,
“Three-Dimensional MEMS Photonic Cross-Connect Switch Design and Performance,”
Journal of Selected Topics in Quantum Electronics, 9 (2), 571-579, March, (2003).
342.
Y. Okuno, J. Geske, K.-G. Gan, Y. -J. Chiu, S. DenBaars, and J. E. Bowers, “1.3 mm
Wavelength Vertical Cavity Surface Emitting Laser Fabricated by OrientationMismatched Wafer Bonding: A Prospect for Polarization Control,” Applied Physics
Letters, 82 (15), 2377-2379, April 14, (2003).
343.
V. Kaman, X. Zheng, C. Pusarla, A. J. Keating, R. J. Helkey, and J. E. Bowers,
“Mitigation of Optical Crosstalk Penalty in Photonic Cross-Connects Using Forward
Error Correction,” Electronics Letters, 39 (8), 678-679, April 17, (2003).
344.
L. Rau, R. Doshi, S. Rangarajan, Y.-J. Chiu, D.J. Blumenthal and J. E. Bowers, “Analog
Performance of an Ultrafast Sampled-Time All-Optical Fiber XPM Wavelength
Converter,” Photonics Technology Letters, 15 (4), 560-562, April, (2003).
345.
V. Kaman, X. Zheng, R. J. Helkey, C. Pusarla, and J. E. Bowers, “A 32-Element 8-Bit
Photonic True-Time Delay System Based on a 288 X 288 3-D MEMS Optical Switch,”
Photonics Technology Letters, 15 (6), 849-851, June, (2003).
346.
C. K. Sun, Y. H. Chen, J. W. Shi, Y.-J Chiu, K. G. Gan and J. E. Bowers, “Electron
relaxation and transport dynamics in low temperature grown GaAs under 1 eV optical
excitation,” Applied Physics Letters, 83 (5), 911-913, August, (2003).
347.
E. S. Björlin, T. Kimura, J. E. Bowers, “Carrier Confined Vertical-Cavity Semiconductor
Optical Amplifiers for Higher Gain and Efficiency,” IEEE Journal of Selected Topics in
Quantum Electronics, Issue on Semiconductor Lasers, 9 (5), 1374-1385,
September/October, (2003).
348.
H.-F. Chou, Y.-J. Chiu, W. Wang, J. E. Bowers, and D. J. Blumenthal, “Compact 160Gb/s Demultiplexer Using a Single-Stage Electrically Gated Electroabsorption
Modulator,” IEEE Photonics Technology Letters, 15 (10), 1458-1460, October, (2003).
349.
W. Wang, H. N. Poulsen, L. Rau. H.-F. Chou, J. E. Bowers, D. J. Blumenthal, and L.
Gruner-Nielsen, “Regenerative 80-Gb/s Fiber XPM Wavelength Converter Using a
Hybrid Raman/EDFA Gain-Enhanced Configuration,” IEEE Photonics Technology
Letters, 15 (10), 1416-1418, October, (2003).
350.
V. Jayaraman, M. Mehta, A. W. Jackson, S. Wu, Y. Okuno, J. Piprek, J. E. Bowers,
“High-Power 1320-nm Wafer-Bonded VCSELs With Tunnel Junctions,” IEEE Photonics
Technology Letters, 15 (11), 1495-1497, November, (2003).
351.
T. Kimura, S. Björlin, J. Piprek, and J. E. Bowers, “High-Temperature Characteristics
and Tunability of Long-Wavelength Vertical-Cavity Semiconductor Optical Amplifiers,”
IEEE Photonics Technology Letters, 15 (11), 1501-1503, November, (2003).
352.
B. Liu, J. Shim, Y. J. Chiu, A. Keathing, J. Piprek, and J. Bowers, “Analog
characterization of low-voltage MQW traveling-wave electroabsorption modulators,”
IEEE Lightwave Tech, 21 (12), 3011-3019, December, (2003).
353.
Z. Hu, H.-F. Chou, D. Blumenthal, and J. E. Bowers, “40GHz Optical Pulse Generation
Using Strong External Light Injection of a Gain-switched High-Speed DBR Laser
Diode,” IEEE Photonics Technology Letters, 15 (12), 1767-1769, December, (2003).
354.
E. S. Björlin, T. Kimura, Q. Chen, C. Wang, and J. E. Bowers, “High Output Power 1540
nm Vertical Cavity Semiconductor Optical Amplifiers,” Electronic Letters, 40 (2), 121123, January, (2004).
355.
J. W. Shi, Y.-H. Chen, K.-G. Gan, Y.-J.Chiu; J.E. Bowers, M-C. Tien, T.-M. Liu, and C.K. Sun, “Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors
Around 1.3-µm Telecommunication Wavelength,” IEEE Photonics Technology Letters,
16 (1), 242-244, Januar, (2004).
356.
V. Kaman, X. Zheng, O. Jerphagnon, C. Pusarla, R. J. Helkey, and J. E. Bowers, “A
Cyclic MUX–DMUX Photonic Cross-Connect Architecture for Transparent Waveband
Optical Networks,” IEEE Photonics Technology Letters, 16 (2), 638-640, February,
(2004).
357.
H.-F. Chou, Y.-J. Chiu, A. Keating, J. E.. Bowers and D. J. Blumenthal, “PhotocurrentAssisted Wavelength (PAW) Conversion With Electrical Monitoring Capability Using a
Traveling-Wave Electroabsorption Modulator,” IEEE Photonics Technology Letters, 16
(2), 530-532, February, (2004).
358.
H.-F. Chou, Z. Hu, J. E. Bowers, D. J. Blumnethal, K. Nishimura, R. Inohara, and M.
Usami, “Simultaneous 160-Gb/s Demultiplexing and Clock Recovery by Utilizing
Microwave Harmonic Frequencies in a Traveling Wave Electroabsorption Modulator,”
IEEE Photonics Technology Letters, 16 (2), 608-610, February, (2004).
359.
B. Liu, J. Shim, Y-J. Chiu, H.-F. Chou, J. Piprek, and J. E. Bowers, “Slope Efficiency
and Dynamic Range of Traveling-Wave Multiple-Quantum-Well Electroabsorption
Modulators,” IEEE Photonics Technology Letters, 16 (2), 590-592, February, (2004).
360.
L. Rau, S. Rangarajan, W. Wang, H.-F. Chou, H. N. Poulsen, J. E. Bowers, and D. J.
Blumenthal, “High-speed optical time-division-multiplexed/WDM networks and their
network elements based on regenerativall-optical ultrafast wavelength converters,”
Journal of Optical Networking, 3 (4), 100-118, February, (2004).
361.
J. Shim, B. Liu, J. Piprek, and J. E. Bowers, “Nonlinear Properties of Traveling-Wave
Electroabsorption Modulator,” IEEE Photonics Technology Letters, 16 (4), 1035-1037,
April, (2004).
362.
Y. L. Okuno, S. P. DenBaars, J. E. Bowers, “High doping incorporation on (311)B
InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel
junction fabrication,” Applied Physics Letters, 84 (18), 3483-3485, May, (2004).
363.
Z. Hu, H.-F. Chou, J. E. Bowers, and D. J. Blumenthal, “40-Gb/s Optical Clock Recovery
Using a Compact Traveling-Wave Electroabsorption Modulator-Based Ring Oscillator,”
IEEE Photonics Technology Letters, 16 (5), 1376-1378, May, (2004).
364.
K.-G. Gan, and J. E. Bowers, “Measurement of Gain, Group Index, Group Velocity
Dispersion, and Linewidth Enhancement Factor of an InGaN Multiple Quantum-Well
Laser Diode,” IEEE Photonics Technology Letters, 16 (6), 1256-1258, May, (2004).
365.
K.-G. Gan, C.-K. Sun, S. P. DenBaars, and J. E. Bowers, “Ultrafast Valence Intersubband
Hole Relaxation in InGaN Multiple-Quantum-Well Laser Diodes,” Applied Physics
Letters, 18 (23), 4675-4677, June, (2004).
366.
J. Shin, B. Liu, J. Piprek, and J. E. Bowers, “An Improved Approach of Optical Loss
Measurement Using Photocurrent and Optical Transmission In An Electroabsorption
Modulator,” IEEE Photonics Technology Letters, 16 (6), 1474-1476, June, (2004).
367.
H.-F. Chou, J. E. Bowers, and D. J. Blumenthal, “Compact 160-Gb/s Add–Drop
MultiplexerWith a 40-Gb/s Base Rate Using Electroabsorption Modulators” IEEE
Photonics Technology Letters, 16 (6), 1474-1476, June, (2004).
368.
Q. Chen, G. D. Cole, E. S. Bjorlin, T. Kimura, S. Wu, C. S. Wang, N. C. MacDonald, and
J.E. Bowers, “First Demonstration of a MEMS Tunable Vertical-Cavity SOA,” IEEE
Photonics Technology Letters, 16 (6), June, (2004).
369.
J. Geske, J. E. Bowers, and A. Riley, “Simplified Nonplanar Wafer Bonding for
Heterogeneous Device Integration,” Applied Physics Leters, 85 (2), 170-172, July,
(2004).
370.
D. Lasaosa, J.-W. Shi, D. Pasquariello, K.-G. Gan, M.-C. Tien, H.-H. Chang, S.-W. Chu,
C.-K. Sun, Y.-J. Chiu and J. E. Bowers, “Traveling-Wave Photodetectors with UltraHigh Power-Bandwidth and Gain-Bandwidth Product Performances,” Invited Paper,
Journal of Special Topics in Quantum Electronics (JSTQE), 10 (4), 728-741,
July/August, (2004).
371.
J. Shim, B. Liu, and J. E. Bowers, “Dependence of Transmission Curves on Input
Optical Power in a Traveling Wave Electroabsorption Modulator,” IEEE Journal of
Quantum Electronics, 40 (11), 1622-1628, November, (2004).
372.
Z. Hu, K. Nishimura, H.-F. Chou, L. Rau, M. Usami, J. E. Bowers, and D. J. Blumenthal,
“40-Gb/s Optical Packet Clock Recovery With Simultaneous Reshaping Using a
Traveling-Wave Electroabsorption Modulator-Based Ring Oscillator,” IEEE Photonics
Techhnology Letters, 16 (12), 2640-2624, December, (2004).
373.
D.Vashaee, J. Christofferson, Y. Zhang, G. Zheng and J. E. Bowers, “Modeling and
Optimization of Single-Element Bulk SiGe Thin-Film Coolers,” Microscale
Thermophysical Engineering, 9 (1), 99-118, January, (2005).
374.
H.-F. Chou, Z. Hu, J. E. Bowers, and D. J. Blumenthal, “Compact Optical 3R
Regeneration Using a Traveling-Wave Electroabsorption Modulator,” IEEE Photonics
Technology Letters, 17 (2), 486-488, February, (2005).
375.
“Optically Preamplified Receiver at 10, 20, and 40 Gb/s Using a 1550-nm VerticalCavity SOA,", T. Kimura, E. S. Bjorlin, H. Chou, Q. Chen, S. Wu, J. E. Bowers IEEE
Photonics Technology Letters, 17 (2), 456-458, February, (2005).
376.
W. Wang, H. N. Poulsen, L. Rau, H.-F. Chou, J. E. Bowers, and D. J. Blumenthal,
“Raman-Enhanced Regenerative Ultrafast All-Optical Fiber XPM Wavelength
Converter,” IEEE Journal of Lightwave Technology, 23 (3), 1105-1115, March, (2005).
377.
G. Cole, E. S. Bjorlin, Q. Chen Q, S. Wu, C.S. Wang, N. C. MacDonald, and J. E.
Bowers, “MEMS-Tunable Vertical-Cavity SOAs,” IEEE Journal of Quantum
Electronics, 41 (3), 390-407, March, (2005).
378.
Z. Hu, H. Chou, K. Nishimura, M. Usami, J. E. Bowers, and D. J. Blumenthal, "Optical
Clock Recovery Circuits Using Traveling-Wave Electroabsorption Modulator-Based
Ring Oscillators for 3R Regeneration," IEEE Journal of Selected Topics in Quantum
Electronics, Special Issue on Integrated Optoelectronics, 11 (2), March/April, (2005).
379.
V. Kaman, X. Zheng, S. Yuan, J. Klingshirn, C. Pusarla, R. J. Helkey, O. Jerphagnon,
and J. E. Bowers, “Cascadability of Large Scale 3-D MEMS based Low-Loss Photonic
Cross-Connects,” IEEE Photonics Technology Letters, 17 (4), 771-773, April, (2005).
380.
G. D. Cole, E. S. Bjorlin, Q. Chen, C. Y. Chan, S. Wu, C. S. Wang, N. C. MacDonald, J.
E. Bowers, "MEMS-tunable vertical-cavity SOAs," IEEE Journal of Quantum
Electronics, 41 (3), 390-407, May, (2005).
381.
E. S. Bjorlin, J. Geske, M. Mehta, J. Piprek, J. E. Bowers, "Temperature Dependence of
the Relaxation Resonance Frequency of Long-Wavelength Vertical-Cavity Lasers," IEEE
Photonics Technology Letters, 17 (5), 944-946, May, (2005).
382.
E. S. Bjorlin, J. Geske, M. Mehta, J. Piprek, J.E. Bowers, "Temperature Dependence of
the Relaxation Resonance Frequency of Long-Wavelength Vertical-Cavity Lasers," IEEE
Photonics Technology Letters, 17 (5), 944-946, May, (2005).
383.
H. Chou and J. Bowers, "Simplified Optoelectronic 3R Regenerator Using Nonlinear
Electro-Optical Transformation in an Electroabsorption Modulator," Optics Express, 13
(7), 2742-2746, May, (2005).
384.
Z. Hu, R. Doshi, H.-F. Chou, H. N. Poulsen, D. Wolfson, J. E. Bowers, and D. J.
Blumenthal, “Optical Label Swapping Using Payload Envelope Detection Circuits,”
IEEE Photonics Technology Letters, 17 (7), 1537-1539, July, (2005).
385.
J. M. Zide, D. O. Klenov, S. Stemmer, G. Zheng, J. E. Bowers, D. Ashace, and A.
Shakouri, “Thermoelectric Power Factor in Semiconductors With Buried Epitaxial
Semimetallic Nanoparticles,” Applied Physics Letters, 87 (11), September, (2005).
386.
Y. L. Okuno, K. G. Gan, H. F. Chou, C. S. Wang, S. Wu, J. Geske, E. S. Bjorlin, and J.
E. Bowers, “Stable Polarization Operation of 1.3-mm Wavelength Vertical-Cavity
Surface-Emitting Laser (VCSEL) Fabricated by Orientation-Mismatched Wafer
Bonding,” IEEE Journal of Selected Topics in Quantum Electronics, 11 (5), 1006-1014,
September, (2005).
387.
V. Kaman, X. Zheng, S. Yuan, J. Klingshirn, C. Pusarla, R. J. Helkey, O. Jerphagnon and
J. E. Bowers, “A 32 10 Gb/s DWDM Metropolitan Network Demonstration Using
Wavelength-Selective Photonic Cross-Connects and Narrow-Band EDFAs,” IEEE
Photonics Technology Letters, 17 (9), 1977-1979, September, (2005).
388.
V. Kaman, S. Yuan, J. Klingshirn, X. Zheng, C. Pusarla, R. J. Helkey, O. Jerphagnon,
and J. E. Bowers, “Optical Performance of Variable Attenuation in Large-Scale 3-D
MEMS-Based Photonic Cross-Connects,” IEEE Photonics Technology Letters, 17 (9),
1857-1859, September, (2005).
389.
Y. J. Chiu, T. H. Wu, W. C. Cheng, and J. E. Bowers, “Enhanced Performance in
Traveling-wave Electroabsorption Modulators Based on Undercut-etching the ActiveRegion,” IEEE Photonics Technology Letters, 17 (10), 2065-2067, October, (2005).
390.
H. Park, A. W. Fang, S. Kodama, and J. E. Bowers, "Hybrid Silicon Evanescent Laser
Fabricated With a Silicon Waveguide and III-V Offset Quantum Wells," Optics Express,
13 (23), 9460-9464, November, (2005).
391.
G. D. Cole, E. J. Bjorlin, Wang. J. E. Bowers, “Widely tunable bottom-emitting verticalcavity SOAs,” IEEE Photonics Technology Letters, 17 (12), 2526-2528, December,
(2005).
392.
J. E. Bowers, H.-F. Chou, “Wavelength Division Multiplexing,” Optical Communications
Systems, Book Chapter, (2005).
393.
E. F. Burmeister, J.E. Bowers, "Integrated Gate Matrix Switch for Optical Packet
Buffering," Photonics Technology Letters, 18 (1), January, (2006).
394.
G. Zeng, J. E. Bowers, J. M. O. Zide and A. C. Gossard, W. Kim, S. Singer, and A.
Majumdar, R. Singh, Z. Bian, Y. Zhang, and A. Shakouri, “ErAs:InGaAs/InGaAlAs
Superlattice Thin-Film Power Generator Array,” Applied Physics Letters, 88, March 13,
(2006).
395.
D. Pasquariello, E. S. Bijorlin, D. Lasagosa, Y.-J. Chiu, J. Poprek, J. E. Bowers,
“Selective Undercut Etching of InGaAs and InGaASP Quantum Wells for Improved
Performance of Long-Wavelength Optoelectronic Devices,” Journal of Lightwave
Technology, 24 (3), March, (2006).
396.
A.W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A
Continuous Wave Hybrid AlGaInAs-Silicon Evanescent Laser,” IEEE Photonics
Technology Letters, 18 (10), 1143-1145, May 15, (2006).
397.
W. Kim, S. L. Singer, A. Majumdar, D. Vashaee, Z. Bian, A. Shakouri, G. Zeng, J. E.
Bowers, J. M. O. Zide, and A. C. Gossard, “Cross-plane Lattice and Electronic Thermal
Conductivities of ErAs:InGaAs/InGaAlAs Superlattices,” Applied Physics Letters, 88,
June 13, (2006).
398.
Y. Zhang, J. Christofferson, A. Shakouri, G. Zeng, J. E. Bowers and E. T. Croke, "OnChip High Speed Localized Cooling Using Superlattice Microrefrigerators," Best Paper
of 2006 Award Winner, IEEE Transactions on Components and Packaging
Technologies, 29 (2), June, (2006).
399.
B. R. Koch, Z. Hu, J. E. Bowers, and D. J. Blumenthal, “All-Optical Payload Envelope
Detection of Variable Length 40Gbps Optically Labeled Packets,” IEEE Photonics
Technology Letters, 18 (17), 1846-1848, September, (2006).
400.
B. R. Koch, Z. Hu, J. E. Bowers, D. J. Blumenthal, “Payload Envelope Detection and
Label Read Integrated Photonic Circuits for Asynchronous Variable Length Optical
Packet Switching with 40-Gb/s RZ Payloads and 10-Gb/s NRZ Labels,” Journal of
Lightwave Technology, 24 (9), 3409-3417, September, (2006).
401.
A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically
Pumped Hybrid AlGaInAs-Silicon Evanescent Laser,” Optics Express, 14, 9203-9210,
October, (2006).
402.
C. H. Huang, H. F. Chou, and J. E. Bowers, “Dynamically Reconfigurable Optical
Packet Switch (DROPS),” Optics Express, 14, 12008, November, (2006).
403.
J. M. O. Zide, D. Vashaee, Z. X. Bian, G. Zeng, J. E. Bowers, A. Shakouri, and A. C.
Gossard, “Demonstration of Electron Filtering to Increase the Seebeck Coefficient in
ErAs:InGaAs/InGaAlAs Superlattices,” Phys. Rev. B, 74 (20), 205335, December,
(2006).
404.
R. Helkey, O. Jerphagnon and J. Bowers, “High Performance Optical Switches,” book
chapter in Grid Computing, (2006).
405.
B. Koch, Z. Hu, J. Bowers, and D. Blumenthal, "Integrated optical payload envelope
detection and label recovery device for optical packet switching networks," Optics
Express, 14, 5073-5078, (2006).
406.
V. Kaman, R. J. Helkey, and J. E. Bowers, "Compact and scalable three-dimensional
microelectromechanical system optical switches," Invited Paper, J. Opt. Netw., 6 (1),
19-24, January, (2007).
407.
D. Zibar, L. A. Johansson, H.-F. Chou, A. Ramaswamy, and J. E. Bowers, “Dynamic
Range Enhancement of a Novel Phase-locked Coherent Optical Phase Demodulator,”
Optics Express, 15 (1), 33-44, January, (2007).
408.
H. F. Chou, and J. E. Bowers, “High-Speed OTDM and WDM Networks Using
Traveling-Wave Electroabsorption Modulators,” Invited Paper, IEEE Journal of
Selected Topics in Quantum Electronics, 13 (1), January/February, (2007).
409.
H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A Hybrid
AlGaInAs-Silicon Evanescent Amplifier,” IEEE Photonics Technology Letters, 19 (4),
230-232, February, (2007).
410.
G. Zheng, J. M. O. Zide, W. Kim, J. E. Bowers, A. C. Gossard, Z. Bian, Y. Zhang, A.
Shakouri, S. L. Singer, and A. Majumdar, “Cross-plane Seebeck Coefficient of
ErAs:InGaAs/InGaAlAs Superlattice,” Journal of Applied Physics, 101, 034502,
February, (2007).
411.
M. N. Sysak, L. Johansson, J. S. Klamkin, L. A. Coldren, and J. E Bowers, “A Dynamic
Measurement Technique for Third-Order Distortion in Optical Phase Modulators,”
Photonics Technology Letters, 19 (3), 170-172, February, (2007).
412.
J. Klamkin, A. Ramaswamy, L. A. Johansson, H.-F. Chou, Matthew N. Sysak, J. W.
Raring, S. P. DenBaars, J. E. Bowers, and L. A. Coldren, “High Output Saturation
Evanescently and High-Linearity Uni-Traveling-Carrier Waveguide Photodiodes,”
Photonics Technology Letters, 19 (3), 149-151, February, (2007).
413.
A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers,
“Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Optics
Express, 15 (5), 2315-2322, March, (2007).
414.
B. R. Koch, J. S. Barton, M. Masanovic, Z. Hu, J. E. Bowers, and D. J. Blumenthal,
“Monolithic Mode-Locked Laser and Optical Amplifier for Regenerative Pulsed Optical
Clock Recovery,” IEEE Photonics Technology Letters, 19 (9), 641-643, May, (2007).
415.
H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J.
E. Bowers, “A Hybrid AlGaInAs-silicon Evanescent Waveguide Photodetector,” Optics
Express, 15 (10), 6044-6052, May, (2007).
416.
D. Zibar, L. A. Johansson, H.-F. Chou, A. Ramaswamy, M. Rodwell, J. E. Bowers,
“Novel Optical Phase Demodulator Based on a Sampling Phase-Locked Loop,”
Photonics Technology Letters, 19 (9), 686-688, May, (2007).
417.
H.-F. Chou, A. Ramaswamy, D. Zibar, L. A. Johansson, J. E. Bowers, M. Rodwell, and
L. A. Coldren, “Highly Linear Coherent Receiver With Feedback,” IEEE Photonics
Technology Letters, 19 (12), June 15, (2007).
418.
A. Fang, H. Park, Y.-H. Kuo, R. Jones, O. Cohen, D. Liang, O. Raday, M. Paniccia and J.
E. Bowers, “Hybrid Silicon Evanescent Devices” Invited Paper, Materials Today, 10 (78), July/August, (2007).
419.
H.-F. Chang, A. W. Fang, M. N. Sysak, H. Park, R. Jones, O. Cohen, O. Raday, M. J.
Paniccia, and J. E. Bowers, “1310 nm Silicon Evanescent Laser,” Optics Express, 15
(18), 11466-11471, August, (2007).
420.
B. R. Koch, A. W. Fang, O. Cohen, and J. E. Bowers, “Mode-locked Silicon Evanescent
Lasers,” Optics Express, 15 (18), 11225-11233, September, (2007).
421.
M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and
M. Paniccia, “Experimental and theoretical thermal analysis of a Hybrid Silicon
Evanescent Laser,” Optics Express, 15 (23), 15041-15046, October, (2007).
422.
Z. Bian, M. Zebarjadi, R. Singh, Y. Ezzahri, A. Shakouri, G. Zeng, J-H. Bahk, J. E.
Bowers, J. M. O. Zide, A. C. Gossard, “Cross-Plane Seebeck Coefficient and Lorenz
number in superlattices.” The American Physical Society, 205311/1-205311/7,
November, (2007).
423.
G. Zeng, J.-H. Bahk, J. E. Bowers, J. M. O. Zide, A. C. Gossard, Z. Bian, R. Singh, A.
Shakouri, W., “ErAs:(InGaAs)1-x(InAlAs)x Alloy Power Generator Modules,” Journal
of Appl. Phys. Lett., 91, 263510, (2007).
424.
H. Park, Y. Kuo, A. Fang, R. Jones, O. Cohen, M. Paniccia, and J. Bowers, "A hybrid
AlGaInAs-silicon evanescent preamplifier and photodetector," Optics Express, 15,
13539-13546, (2007).
425.
A. Ramaswamy, L. A. Johansson, J. Klamkin, H.-F. Chou, C. Sheldon, M. J. Rodwell, L.
A. Coldren, and J. E. Bowers, “Integrated Coherent Receivers for High Linearity
Microwave Photonic Links,” Journal of Lightwave Technology, 26 (1), 209-216, January,
(2008).
426.
A. W. Fang, B. R. Koch, K. Gan, H. Park, R. Jones, O. Cohen, M. J. Paniccia, D.
Blumenthal, J. E. Bowers, “A racetrack mode-locked silicon evanescent laser,” Optics
Express, 16 (2), 1393-1398, January, (2008).
427.
S-S. Hwang, J. J. Shynk, T. Kang, J. E. Bowers, “Algorithms for a Sparse Reconfigurable
Adaptive Filter and a Photonic Swtich Architecture,” IEEE Transactions on Circuits and
Systems-I: Regular Papers, 55 (1), 347-360, February, (2008).
428.
“Photonic Integration on Hybrid Silicon Evanescent Device Platform,”, H. Park, A. W.
Fang, D. Liang, Y. Kuo, H. Chang, B. R. Koch, H. Chen, M. N. Sysak, R. Jones, J.
E. Bowers AOT, Article ID 682978, 1-17, March, (2008).
429.
E.F. Burmeister, D.J. Blumenthal, J.E. Bowers, “A Comparison of Optical Buffering
Technologies,” Optical Switching and Networking, 5 (1), 10-18, March, (2008).
430.
A. W. Fang, E. Lively, Y-H. Kuo, D. Liang, J. E. Bowers, “A Distributed Feedback
Silicon Evanescent Laser” Optics Express, 16 (7), 4413-4419, March, (2008).
431.
J. Klamkin, Y.-C. Chang, A. Ramaswamy, L.A. Johansson, J.E. Bowers, D.J. S.P.
DenBaars, L.A. Coldren, "Output Saturation and Linearity of Waveguide UnitravelingCarrier Photodies," Journal of Quantum Electronics, 44 (4), 354-359, April, (2008).
432.
J. Klamkin, Y-C. Chang, A. Ramaswamy, L. A. Johansson, J. E. Bowers, S. P.
DenBaars, and L. A. Coldren, “Output Saturateion and Linearity of Waveguide UniTraveling-Carrier Photodiodes,” Journal of Quantum Electronics, 44 (4), 354-359, April,
(2008).
433.
E. F. Burmeister, J. P. Mack, H. N. Poulsen, J. Klamkin, L. A. Coldren, D. J. Blumenthal,
J. E. Bowers, "SOA gate array recirculating buffer with fiber delay loop," Optics Express,
16 (12), 8451-8456, May 27, (2008).
434.
D. Liang, A.W. Fang, J. E. Bowers, “Low-Temperature, Strong SiO2-SiO2 Covalent
Wafer Bonding For III-V Compound Semicounductors-to-Silcion Phontonic Integrated
Circuits,” Journal of Electronic Materials, ISSN 0361-5235, June 3, (2008).
435.
Y. Kang, M. Zadka, S. Litski, G. Sarid, M. Morse, M. Paniccia, Y. Kuo, J. Bowers, A.
Beling, H. Liu, D. McIntosh, J. Campbell, and A. Pauchard, "Epitaxially-grown Ge/Si
avalanche photodiodes for 1.3 µm light detection," Optics Express, 16, 9365-9371, June
20, (2008).
436.
Y-H. Kuo, H-W. Chen, J.E. Bowers, “High speed hybrid silicon evanescent
electroabsorption modulator,” Optics Express, 16 (13), 9936-9941, June 20, (2008).
437.
Hyundai Park, John P. Mack, Daniel J. Blumenthal, and John E. Bowers, “An Integrated
Recirculating optical buffer,” Optics Express, 16 (15), 11124-11131, July 10, (2008).
438.
D. Liang, J. E. Bowers, “Highly Efficient Vertical Outgassing Channels for LowTemperature InP-to-Silicon Direct Wafer Bonding on the Silicon-On-Insulator
Substrate,” JVST, 26 (4), 1560-1568, August 15, (2008).
439.
M. N. Sysak, J.O. Anthes, J.E. Bowers, O. Raday, R. Jones, "Integration of Hybrid
Silicon Lasers and Electroabsorption Modulators," Optics Express, 16 (17), 1247912486, August 18, (2008).
440.
D. Zibar, L.A. Johansson, H-F. Chou, A. Ramaswamay, M. Rodwell, J.E. Bowers,
“Phase-Locked Coherent Demodulator With Feedback and Sampling for Optically PhaseModulated Microwave Links,” Journal of Lightwave Technology, 26 (15), 2460-2475,
August, (2008).
441.
B.R. Koch , A.W. Fang , E. Lively , R. Jones , O. Cohen , D.J. Blumenthal , J.E. Bowers,
“Mode locked and distributed feedback silicon evanescent lasers,” Laser and Photonics
Review, 3 (4), 355-369, October 2, (2008).
442.
B.R. Koch, A.W. Fang, E. Lively, R. Jones, O. Cohen, D.J. Blumenthal, J.E. Bowers,
"Mode locked and distributed feedback silicon evanescent lasers," Laser and Photonic
Review, 1 (15), DOI 10-1002/lpor.200810033, November 27, (2008).
443.
V. Kaman, H. N. Poulsen, R. J. Helkey, J. E. Bowers, “All-Optical Traffic Grooming,”
book chapter in Traffic Grooming for Optical Networks: Foundations and Techniques
and Frontiers, ed by R. Dutta, A. E. Kamal, G. N. Rouskas, Springer, (2008).
444.
G. Zeng, J.-H. Bahk, J. E. Bowers, H. Lu, J. M. O. Zide, A. C. Gossard, R. Singh, Z.
Bian, A. Shakouri, S. L. Singer, W. Kim, A. Majumdar, "Power Generator Modules of
Segmented Bi2Te3 and ErAs:(InGaAs)(1-x)(InAlAs)(x)," Journal of Electronic
Materials, 37, 1786, (2008).
445.
H. Chen, Y. Kuo, and J. Bowers, "High speed hybrid silicon evanescent Mach-Zehnder
modulator and switch," Optics Express, 16, 20571-20576, (2008).
446.
D. Liang, A. W. Fang, H.-W. Chen, M.N. Sysak, B.R. Koch, E. Lively, Omri Raday, Y.H. Kuo, R. Jones, and J.E. Bowers, "Hybrid silicon evanescent approach to optical
interconnects," Applied Physics A: Materials Science & Processing,
DOI10.1007/s00339-009-5118-1, 0947-8396 (Print)/1432-0630 (Online), Febuary 19,
(2009).
447.
E. F. Burmeister, J. P. Mack, H. N. Poulsen, M. L. Mašanović, B. Stamenić, D. J.
Blumenthal, and J. E. Bowers, "Photonic integrated circuit optical buffer for packetswitched networks," Optics Express, 17 (8), 6629-6635, April 7, (2009).
448.
M. Zebarjadi, K. Esfarjani, A. Shakouri, J.-H. Bahk, Z. Bian, G. Zeng, J. E. Bowers, H.
Lu, J Zide, A.Gossard, "Effect of nanoparticle scattering on thermoelectric power factor,"
Virtual Journal of Nanoscale Science & Technology, 19 (22), May, (2009).
449.
A. W. Fang, M. N. Sysak, B. R. Koch, R. Jones, E. Lively, Y.-H. Kuo, D. Liang, O.
Raday, J. E. Bowers, "Single-Wavelength Silicon Evanescent Lasers," Journal of
Selected Topics in Quantum Electronics, 15 (3), 535-544, May/June, (2009).
450.
D. Liang, A.W. Fang, H.-W. Chen, M. N. Sysak, B.R. Koch, E. Lively, O. Raday, Y.-H.
Kuo, R. Jones, J. E. Bowers, “ Hybrid Silicon Evanescent Approach to Optical
Interconnects,” Applies Physica A: Materials Science & Processing, 95 (4), doi:
10.1007/s00339-0095118-1, 1045-1057, June, (2009).
451.
D. Liang, J. E. Bowers, “Photonic Integration: Si or InP Substrates?” Electronics Letters,
45 (12), June, (2009).
452.
N. Nunoya, A. Ramaswamy, H.-W., Chen, M.N. Sysak, J.E. Bowers, "Dynamic
Characterization of Distortion in Hybrid Silicon Evanescent Phase Modulators," IEEE
Photonic Tech. Lett., 21 (3), 833-835, July, (2009).
453.
G. Zeng, J.H. Bahk, J. E. Bowers, H. Lu, A. C. Gossard, S. L. Singer, A. Majumdar, Z.
Bian, M. Zebarjadi, A. Shakouri, “Thermoelectric Power Generator Module of 16 x 16
Bi2Te3 and 0.6%ErAs:(InGaAs)[sub 1−x](InAlAs)[sub x] Segmented Elements” Applied
Physics Letters, 95 (8), 1, August 24, (2009).
454.
N. Madamopoulos, V. Kaman, S. Yuan, O. Jerphagnon, R. J. Helkey, J. E. Bowers,
"Applications of Large-Scale Optical 3D-MEMS Switches in Fiber-Based BroadbandAccess Networks Photonic Network Communications, DOI10.1007/s11107-009-0211-0,
August 13, (2009).
455.
C.-H. Chen, J. Klamkin, S. C. Nicholes, L. A. Johansson, J. E. Bowers, L. A. Coldren,
“Compact beam splitters with deep gratingsfor miniature photonic integrated circuits:
design and implementation aspects,” Applied Optics, 48 (25), 68-75, September, (2009).
456.
Daoxin Dai, Hui-Wen Chen, John E. Bowers, Yimin Kang, Mike Morse, and Mario J.
Paniccia, "Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si
avalanche photodiodes," Optics Express, 17 (19), 16549-16557, September, (2009).
457.
D. Liang, M. Fiorentino, T. Okumura, H.-H. Chang, D. T. Spencer, Y.-H. Kuo, A. W.
Fang, D. Dai, R. G. Beausoleil and J. E. Bowers, "Electrically-pumped compact hybrid
silicon microring lasers for optical interconnects," Optics Express, 17 (22), 20355-20364,
October 23, (2009).
458.
D. Dai, A. W. Fang, J.E. Bowers, “Hybrid silicon lasers for optical interconnects,” New
Journalof Physics: Advanced Semiconductor Heterostructures for Optoelectronics, 11
(12), 125016, December, (2009).
459.
M. Zebarjadi, K. Esfarjani, A. Shakouri, J.-H. Bahk, Z. Bian, G. Zeng, J. E. Bowers, H.
Lu, J. Zide, A. Gossard, "Effect of nanoparticle scattering on thermoelectric power
factor," Applied Physics Letters, 94, 202105, (2009).
460.
R. Singh, Z. Bian, A. Shakouri, G. Zeng, J.H. Bahk, J. E. Bowers, J. M. O. Zide, A. C.
Gossard, “Direct measurement of thin-film thermoelectric figure of merit,” Applied
Physics Letters, 94, 202508, (2009).
461.
M. Zebarjadi, K. Esfarjani, A. Shakouri, Z. Bian, J.-H. Bahk, G. Zeng, J. E. Bowers, H.
Lu, J. Zide, A. Gossard, "Effect of Nanoparticles on Electron and Thermoelectric
Transport," Journal of Electronic Materials, 38, 954, (2009).
462.
W. S. Zaoui, H.W. Chen, J. E. Bowers, Y. Kang, M. Morse, M. J. Paniccia, A. Pauchard,
J. C. Campbell, “Frequency Response and Bandwidth Enhancement in Ge/Si Avalanche
Photodiodes with over 840GHz Gain-Bandwidth-Product” Optics Express, 17 (15),
12641-12649, (2009).
463.
G. Roelkens, L. Liu, J. Van Campenhout, D. Van Thourhout, R. Baets, D. Liang, A.
Fang, J. Bowers, R. Jones, B. Koch, “III-V/Silicon Photonics for On-chip and Intra-chip
Optical Interconnects,” Laser & Photonics Reviews, DOI: 10.1002/lpor.200900033,
January 11, (2010).
464.
N. Madamopoulos, V. Kaman, S. Yuan, O. Jerphagnon, R. J. Helkey, and J. E. Bowers,
“Applications of Large-Scale Optical 3D MEMS Switches in Fiber-Based BroadbandAccess Networks,” Photonic Network Communications, 19 (1), 62-73, February 1,
(2010).
465.
H. Chen, Y. Kuo, and J. Bowers, "25Gb/s hybrid silicon switch using a capacitively
loaded traveling wave electrode," Optics Express, 18, 1070-1075, (2010).
466.
A. Ramaswamy, N. Nunoya, K. Williams, J. Klamkin, M. Piels, L. Johansson, A.
Hastings, L. Coldren, and J. Bowers, "Measurement of intermodulation distortion in
high-linearity photodiodes," Optics Express, 18, 2317-2324, (2010).
CONFERENCES
1.
M. Marshak, J. E. Bowers, H. Kagan, J. Lee, E. Marquit, W. Peterson, E. Peterson and K.
Ruddick, “Inclusive Pion Asymmetries in Polarized Proton-Proton Collisions at 6
GeV/c,” American Physical Society Meeting, New York, (1976).
2.
W. P. Robbins and J. E. Bowers, “Comparison of the Grating and Meander-Line
Transducers for Magnetoelastic Surface Wave Excitation,” IEEE Ultrasonics Symposium
Proc., 693, (1978).
3.
J. E. Bowers, B. T. Khuri-Yakub, G. S. Kino, and F. Yu, “Design and Applications of
High Efficiency Wideband SAW Edge Bonded Transducers,” IEEE Ultrasonics
Symposium Proc., 794, (1978).
4.
H. Tuan, A. Selfridge, B. T. Khuri-Yakub, G. S. Kino, and J. E. Bowers, “An Edge
Bonded Surface Acoustic Wave Transducer Array,” IEEE Ultrasonics Symposium Proc.,
221, (1979).
5.
J. E. Bowers, J. L. Schmit, and J. Mroczkowski, “Characterization of LPE Grown
Hg1xCdxTe,” IRIS Detector Specialty Meeting, Minneapolis, Minnesota, (1979).
6.
J. E. Bowers, B. T. Khuri-Yakub, and G. S. Kino, “Monolithic Sezawa Wave Storage
Correlators and Convolvers,” IEEE Ultrasonics Symposium Proc., 118, (1980).
7.
C. H. Chou, J. E. Bowers, A. R. Selfridge, B. T. Khuri-Yakub, and G. S. Kino, “The
Design of Broadband and Efficient Acoustic Wave Transducers,” IEEE Ultrasonics
Symposium Proc., 984, (1980).
8.
A. F. Arbel and J. E. Bowers, “Active Matching of Interdigital Transducers,” IEEE
Ultrasonics Symposium Proc., 69, (1981).
9.
R. L. Thornton, J. E. Bowers, and J. B. Green, “Recent Developments in the ZnO on Si
Storage Correlator,” IEEE Ultrasonics Symposium Proc., 774, (1981).
10.
J. E. Bowers, R. L. Jungerman, and G. S. Kino, “Fiber Optic Sensor for Surface Acoustic
Waves,” IEEE Topical Conf. on Optical Fiber Communications, Phoenix, Arizona,
(1982).
11.
J. E. Bowers, R. L. Jungerman, and B. T. Khuri-Yakub, “Noncontacting Sensors for
Acoustic Waves,” IEEE Ultrasonics Symposium Proc., 854, (1982).
12.
S. A. Newton, J. E. Bowers and H. J. Shaw, “Single Mode Fiber Recirculating Delay
Line,” SPIE, (1982).
13.
S. A. Newton, H. J. Shaw, and J. E. Bowers, “Single-Mode Fiber Multiterminal
Directional Coupler/Tapped Delay Line,” 1983 Topical Conf. on Optical Fiber Comm.,
paper ML4, (1983).
14.
M. Tur, B. Moslehi, J. E. Bowers, S. A. Newton, K. P. Jackson, J. W. Goodman, and H.
J. Shaw, “Laser Phase Noise Effects in Fiber-Optic Signal Processors with Recirculating
Loops,” CLEO, (1983).
15.
J. E. Bowers, L. A. Coldren, B. R. Hemenway, and B. I. Miller, “1.55 µm SingleLongitudinal-Mode Multisection Ridge Lasers,” Device Research Conference, paper
IVB-4, (1983).
16.
J. E. Bowers, L. A. Coldren and B. I. Miller, “Photoelectrochemical Etching of
InGaAsP,” Electronic Materials Conference, paper M-7, (1983).
17.
L. A. Coldren, B.I. Miller, J. E. Bowers, K.J. Ebeling and J.A. Rentschler, “Coupled
Cavity Approach to Single-Mode Lasers at 1.3-1.6 µm,” Int. Conf. Int. Optics and Opt.
Fiber Comm., 194, (1983).
18.
J. E. Bjorkholm, J. E. Bowers, C. A. Burrus, and B. R. Hemenway, “Fabrication and
Mode Stability of Cleaved-Coupled-Cavity Lasers Having a Long and a Short Cavity,”
OSA Annual Meeting, (1983).
19.
S. A. Newton, K. P. Jackson, J. E. Bowers, C. C. Cutler, and H. J. Shaw, “Fiber-Optic
Delay Line Devices for Gigahertz Signal Processing,” Proc. IEEE Int. Conf. Acoustics,
Speech, Signal Processing, 1204, (1983).
20.
J. E. Bowers, J. E. Bjorkholm, C. A. Burrus, L. A. Coldren, B. R. Hemenway, and D. P.
Wilt, “Cleaved Coupled-Cavity Lasers with Large Cavity Length Ratios for Enhanced
Stability,” IEEE Topical Conf. on Optical Fiber Comm., paper MF-4, (1984).
21.
R. S Tucker, J. E. Bowers, and C. A. Burrus, “Microwave Direct Frequency Modulation
of Cleaved-Coupled-Cavity InGaAsP Channeled Substrate Lasers,” IEEE Topical Conf.
on Optical Fiber Comm., paper WB6, (1984).
22.
L. A. Coldren, C. A. Burrus, K. J. Ebeling, T. L. Koch, R. G. Swartz and J. E. Bowers,
“Verification of Coupling Gap Dependence in Coupled-Cavity Lasers,” IEEE Topical
Conf. on Optical Fiber Comm., paper WB5, (1984).
23.
J. E. Bowers, W. T. Tsang, T. L. Koch, N. A. Olsson, and R. A. Logan, “Microwave
Intensity and Frequency Modulation of Ridge-Waveguide-Type DFB Lasers,” Int.
Quantum Electron. Conf., paper PDB-2, (1984).
24.
J. E. Bowers and C. A. Burrus, “Microwave Frequency Modulation of DC-PBH Lasers,”
IX IEEE Int. Semiconductor Laser Conf., (1984).
25.
L. A. Coldren, G. D. Boyd, J. E. Bowers, and C. A. Burrus, “Chirp Reduction in
Modulated Three-Terminal Coupled-Cavity Lasers,” IX Int. Semiconductor Laser Conf.,
Rio de Janeiro, (1984).
26.
L. A. Coldren, G. D. Boyd, J. E. Bowers, and C. A. Burrus, “Chirp Reduction in TwoSection Coupled-Cavity Diode Lasers,” OSA Meeting, J. Opt. Soc. Am., (1984).
27.
J. E. Bowers, T. L. Koch, B. R. Hemenway, T. J. Bridges, E. G. Burkhardt, and D. P.
Wilt, “8 GHz Bandwidth 1.52 µm Vapor Phase Transported InGaAsP Lasers,” CLEO,
Washington, DC, (1985).
28.
T. L. Koch and J. E. Bowers, “Factors Affecting Wavelength Chirping in Directly
Modulated Semiconductor Lasers,” CLEO, Washington, DC, (1985).
29.
J. E. Bowers and B. R. Hemenway, “Precise Positioning of Semiconductor Laser
Cleaves,” CLEO, Washington, DC, (1985).
30.
A. H. Gnauck, J. E. Bowers, and J. C. Campbell, “8 Gb/s Transmission over 30 km of
Optical Fiber,” European Conf. on Comm., paper PD-2, Venice, (1985).
31.
J. E. Bowers, “Semiconductor Lasers and Detectors with Bandwidths in Excess of 20
GHz,” IEEE Sarnoff Symp., Princeton, NJ, (1985).
32.
J. E. Bowers, B. R Hemenway, A. H. Gnauck, D. P. Wilt, and S. Maynard, “20 GHz
Bandwidth InGaAsP Laser,” IEEE Top. Conf. on Opt. Fiber Comm., paper PD-B2,
(1985).
33.
J. E. Bowers, C. A. Burrus, and R. S. Tucker, “22-GHz Bandwidth InGaAs/InP PIN
Photodiodes,” Picosecond Optics and Electronics Meeting, Incline Village, Nevada,
(1985).
34.
B. R. Hemenway, J. E. Bowers and D. P. Wilt, “Photoelectrochemical Etched Grooves to
Create Specific Cavity Lengths in Semiconductor Lasers,” Top. Conf. Opt. Fiber Comm.,
paper TuQ13, San Diego, (1985).
35.
J. E. Bowers and B. G. Koehler, “A Fiber Optic Frequency Discriminator for Microwave
Optical Communications,” Topical Meeting on Optical Fiber Comm., paper MH3, San
Diego, (1985).
36.
J. E. Bowers, and C. A. Burrus, “Heterojunction Waveguide Photodetectors,” SPIE
Conference on High Frequency Optical Communications, Boston, MA, September,
(1986).
37.
J. E. Bowers and C. A. Burrus, “Semiconductor Laser, Detectors and Optical
Transmission Systems with Bandwidth from DC to Millimeter Waves,” CLEO, Invited
Paper, (1986).
38.
R. S. Tucker, J. M. Wiesenfeld, P. M. Downey and J. E. Bowers, “Limitations on
Switching Speed in Wideband Semiconductor Lasers,” IEEE MTT-S International
Microwave Symposium, paper Z-2, Baltimore, (1986).
39.
J. E. Bowers, “Microwave and Millimeter Wave Bandwidth Optical Communication,”
IEEE MTT-S International Microwave Symposium, Invited Paper, paper Z-1, Baltimore,
(1986).
40.
J. E. Bowers, A. K. Srivastava, C. A. Burrus, J. C. DeWinter, M. A. Pollack and J. L.
Zyskind, “High Efficiency 4 Gb/s GaInAsSb Photodetectors for Wavelengths to 2.3 µm,”
Int. Guided Wave Optic Meeting, postdeadline paper, (1986).
41.
J. L. Zyskind, J. E. Bowers, A. K. Srivastava, C. A. Burrus, J. C. DeWinter, and M. A.
Pollack, “High Speed GaInAsSb/GaSb PIN Photodetectors for Wavelengths to 2.3 µm,”
Optical Soc. Am., paper TuK4, (1986).
42.
J. L. Zyskind, C. A. Burrrus, C. Caneau, A. G. Dentai, M. A. Pollack, A. K. Srivastava, J.
E. Bowers, and J. C. DeWinter, “GaInAsSb Detectors and Lasers for Mid-Infrared
Optical Communications,” SPIE, 722(200), Boston, (1986).
43.
J. E. Bowers, “Ultimate Bandwidth of Semiconductor Lasers,” SPIE, Invited Paper,
723(42), Boston, (1986).
44.
J. E. Bowers, B. R. Hemenway, T. J. Bridges, E. G. Burkhardt, and D. P. Wilt, “Design
and Implementation of High Speed InGaAsP Constricted Mesa Lasers,” Top. Conf. on
Opt. Fiber Comm., paper WBB2, Atlanta, (1986).
45.
R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers, “Measurements of
Switching Transients in High-Speed Semiconductor Laser,” Top. Conf. on Opt. Fiber
Comm., paper WBB3, Atlanta, (1986).
46.
J. E. Bowers, “PSK Subcarrier Modulation of Semiconductor Lasers at Frequencies to 16
GHz,” X Int. Semiconductor Laser Conference, paper M-3, Kanazawa, (1986).
47.
J. E. Bowers, “Relation between Bandwidth and Resonance Frequency and the
Determination of Bandwidth Limitations,” X Int. Semiconductor Laser Conference, paper
M-1, Kanazawa, (1986).
48.
P. M. Downey and J. E. Bowers, “Spectra and Picosecond Dynamics of a Gain-Switched
Laser,” CLEO, Baltimore, (1987).
49.
J. E. Bowers, “Wide Bandwidth Optical Devices,” Device Research Conference, Plenary
Paper, Santa Barbara, (1987).
50.
J. E. Bowers, “High Speed Optoelectronic Communications and the Requirements for
Drivers and Receivers,” IEEE Cornell Univ. Conf. Adv. Concepts in High Speed
Semiconductor Devices and Circuits, Plenary Paper, Cornell, (1987).
51.
J. C. Campbell, W. T. Tsang, G. J. Qua, B. C. Johnson and J. E. Bowers, “WideBandwidth InP/InGaAsP/InGaAs Avalanche Photodiodes Grown by Chemical Beam
Epitaxy,” IEEE Int. Electron. Dev. Meeting, Washington, DC, (1987).
52.
J. Carlin, J. E. Bowers, A. C. Chipaloski, and S. Booodaghians, “Direct Fiber Optic
Transmission of a Wideband Multi-Carrier Microwave Signal Spectrum to and from a
Satellite Earth Station,” IEEE MTT-S International Microwave Symposium, Las Vegas,
Nevada, (1987).
53.
P. M. Downey, J. E. Bowers, R. S. Tucker, and J. M. Wiesenfeld, “Picosecond
Measurements of Gain-Switching in a Semiconductor Laser Driven by Ultrashort
Electrical Pulses,” Top Meeting on Picosecond Optoelectronics and Electronics, paper
ThA4, Incline Village, Nevada, (1987).
54.
A. H. Gnauck and J. E. Bowers, “16 Gbit/s Direct Modulation of an InGaAsP Laser,”
Top. Meeting Picosecond Electronics and Optoelectronics, paper WE-18, Incline Village,
Nevada, (1987).
55.
J. E. Bowers and C. E. Burrus, “Characteristics, Packaging and Physics of Ultra High
Speed Diode Lasers and Detectors,” Top. Meeting Picosecond Electronics and
Optoelectronicspaper, Invited Paper, paper ThA1, Incline Village, Nevada, (1987).
56.
R. S. Tucker, A. H. Gnauck, J. M. Wiesenfeld, and J. E. Bowers, “8 Gb/s Return-to-Zero
Modulation of a Semiconductor Laser by Gain-Switching,” Top. Mtg. on Optical Fiber
Comm., paper WK-4, (1987).
57.
J. E. Bowers, “Microwave Signal Transmission with High Speed InGaAsP Lasers,” Top.
Mtg. on Optical Fiber Comm., Invited Paper, paper WK-1, (1987).
58.
J. E. Bowers, “Ultrahigh Frequency Modulation of Laser Diodes,” CLEO, Invited Paper,
Anaheim, (1988).
59.
J. E. Bowers, Y. G. Wey, A. Mar, P. A. Morton, and S. W. Corzine, “Modulation
Frequency Dependence of Active Mode Locking of Semiconductor Lasers,” IEEE
International Conference on Semiconductor Lasers, Boston, (1988).
60.
J. E. Bowers, “Subpicosecond Pulses from Mode Locked Lasers,” LEOS ‘88 Annual
Meeting, Invited Paper, Santa Clara, (1988).
61.
R. P. Schloss, A. C. Chipaloski, J. W. Carlin, and J. E. Bowers, “Reduction of In-Band
Intermodulation Products in Microwave Analog Fiberoptic Links by Application of a
Strong Out-of-Band Tone,” O-E Fiber-Lase, (1988).
62.
J. E. Bowers, “High Speed Lasers, Photodetectors and Optical Communications,”
SHORT COURSE, OFC, New Orleans, (1988).
63.
J. E. Bowers, “Generation and Detection of Millimeter Wave Modulated Light with High
Speed Diode Lasers and Photodetectors,” The 13th International Conference on Infrared
and Millimeter Waves, Invited Paper, Honolulu, (1988).
64.
S. W. Corzine, J. E. Bowers, G. Przybylek, U. Koren, B. I. Miller and C. E. Soccolich,
“An Actively Mode Locked Laser with Subpicosecond Output,” Top. Conf. Optical Fiber
Comm., New Orleans, (1988).
65.
U. Koren, B. I. Miller, Y. K. Su, T. L. Koch, and J. E. Bowers, “Low Internal Loss
Separate Confinement Heterostructure InGaAs/InGaAsP Quantum Well Laser,” Top.
Conf. Optical Fiber Comm., New Orleans, (1988).
66.
J. E. Bowers, J. Wasserbauer, D. Crawford, S. Zehr and K. Hess, “Semi-Insulating InP
Layers: Growth, Processing and Devices,” International Conference on InP and Related
Materials for Advanced Electronic and Optical Devices, Invited Paper, paper C-1,
March 20, (1989).
67.
P. A. Morton, R. J. Helkey, S. W. Corzine, and J. E. Bowers, “Subpicosecond Multiple
Pulse Formation in Actively Mode Locked Semiconductor Lasers,” OSA Topical Meeting
on Picosecond Electronics and Optics, Salt Lake City, March, (1989).
68.
P. A. Morton, J. E. Bowers, L. A. Koszi and D. P. Wilt, “Monolithic Mode Locked 1.3
µm Laser with Active Waveguide and Saturable Absorber,” Device Research
Conference, paper IIIA-4, Boston, June 19-21, (1989).
69.
J. E. Bowers, D. J. Derickson, A. Mar, P. A. Morton, and M. J. W. Rodwell, “Phase
Noise in Actively Mode Locked Semiconductor Lasers,” Seventh International
Conference on Integrated Optics and Optical Fiber Communication, Kobe, Japan, July
18-21, (1989).
70.
J. E. Bowers, P. A. Morton, R. Helkey, D. Derickson, and A. Mar, “High Speed
Semiconductor Lasers and Applications in Subpicosecond Mode Locking,” IEEE LEOS
Annual Meeting, Invited Paper, paper OE 7.1, Orlando, (1989).
71.
D. J. Derickson, R. J. Helkey, A. Mar, P. A. Morton, and J. E. Bowers, “Self Mode
Locking of a Semiconductor Laser Using Positive Feedback,” IEEE LEOS Annual
Meeting, paper OE4.4, Orlando, (1989).
72.
J. J. Dudley, L. Melcer, J. E. Bowers, E. Hu, and F. Storz, “Surface Emitting
GaInAsP/InP Lasers,” IEEE LEOS Annual Meeting, paper OE11.3, Orlando, (1989).
73.
P. A. Morton, J. E. Bowers, L. A. Koszi, M. Soler, J. Lopata, D. P. Wilt, “Monolithic
Mode-Locked 1.3 µm Semiconductor Lasers Arrays,” International Electron Devices
Meeting, Washington, (1989).
74.
J. E. Bowers, “High Speed Semiconductor Lasers,” SHORT COURSE, CLEO, Baltimore,
(1989).
75.
P. A. Morton, D. J. Derickson, R. J. Helkey, A. Mar, and J. E. Bowers, “Ultrafast
Semiconductor Lasers,” Fourth US-USSR Symposium on the “Physics of Optical
Phenomena and their Use as Probes of Matter”, Irvine, CA, January 22, (1990).
76.
D. L. Crawford, J. E. Bowers, Y. G. Wey, P. A. Morton, D. Derickson, C. A. Burrus, and
F. Storz, “High Speed Photodetectors,” SPIE Digital Optical Computing Meeting, SPIE
#1215, 220-223, Los Angeles, CA, January, (1990).
77.
P. A. Morton, R. J. Helkey, A. Mar, D. J. Derickson, and J. E. Bowers, “Monolithic
Mode Locked Laser Arrays in Optical Computing,” SPIE Digital Optical Computing
Meeting, Invited Paper, SPIE #1215, 94-102, Los Angeles, CA, January, (1990).
78.
D. L. Crawford, Y. G. Wey, J. E. Bowers, M. J. Hafich and G. Y. Robinson, “GaInAs
PIN Photodetectors on Semi-Insulating Substrates,” SPIE OE/Fibers Meeting, SPIE
#1371, paper 1371-21, 138-141, January, (1990).
79.
J. E. Bowers, D. L. Crawford, Y. G. Wey, R. L. Nagarajan, and J. Wasserbauer, “High
Speed Lasers and Photodetectors,” AFCEA Defense Fiber Optics Conference, Invited
Paper, McLean, VA, March 20-23, (1990).
80.
R. Helkey, P. A. Morton, and J. E. Bowers, “A New Partial Integration Method for
Analysis of Mode Locked Semiconductor Lasers,” Integrated Photonics Conference,
Hilton Head, March, (1990).
81.
Y. G. Wey, D. L. Crawford, J. E. Bowers, and F. Storz, “Design of High Speed
GaInAs/InP p-i-n Photodetectors,” IEEE InP and Related Compounds Conference,
Denver, CO, April, (1990).
82.
J. G. Wasserbauer, J. E. Bowers, and S. Zehr, “High Speed Semi-Insulating GaInAsP
Laser Processing,” IEEE InP and Related Compounds Conference, Denver, CO, April,
(1990).
83.
P. A. Morton, D. L. Crawford and J. E. Bowers, “High Bandwidth Operation of 1.3 µm
GaInAsP Surface Emitting Lasers,” CLEO, Los Angeles, CA, May, (1990).
84.
D. L. Crawford, Y. G. Wey and J. E. Bowers, “High Speed Quantum Wire
Photodetectors,” CLEO, Los Angeles, CA, May, (1990).
85.
J. R. Karin, L. G. Melcer, J. E. Bowers, S. W. Corzine, R. S. Geels and L. A. Coldren,
“Picosecond Gain-Switching of GaAs Surface Emitting Lasers,” CLEO, Los Angeles,
CA, May, (1990).
86.
M. Case, M. Kamegawa, K. Giboney, M. Rodwell, J. Franklin and J. E. Bowers, “62.5 ps
to 5.5 ps Soliton Compression on a Monolithic Nonlinear Transmission Line,” DRC postdeadline paper, Santa Barbara, CA, June, (1990).
87.
L. G. Melcer, J. R. Karin, R. L. Nagarajan, S. W. Corzine, and J. E. Bowers, “Minimum
Pulsewidth and Delay for Multiple Quantum Well Vertical Cavity Lasers,” 22nd
Conference on Solid State Devices and Materials (SSDM), paper D-3-3, 525-528, Sendai,
Japan, July, (1990).
88.
D. J. Derickson, A. Mar, and J. E. Bowers, “Relative and Absolute Timing Jitter In
Actively Mode-Locked Semiconductor Lasers,” Int. Sem. Laser Conf., Davos,
Switzerland, September 9-14, (1990).
89.
T. Fukushima, J. Wasserbauer, and J. E. Bowers, “The Advantage of Compressive Strain
for InGaAs/InP Multiple Quantum Well Lasers,” Int. Sem. Laser Conf., Postdeadline
paper, paper PD-4, Davos, Switzerland, September 9-14, (1990).
90.
J. E. Bowers, “Picosecond Dynamics in Semiconductor Lasers,” Int. Sem. Laser Conf.
Davos, Plenary Paper, paper A-3, Switzerland, September 9-14, (1990).
91.
D. I. Babic, J. E. Dudley, M. Shirazi, E. L. Hu, and J. E. Bowers, “Sputter Deposition of
Precision Si/Si3N4 Bragg Reflectors Using Multi-Tasking Interactive Processing
Control,” Int. Vacuum Soc. Meeting, September, (1990).
92.
A. Mar, J. D. Dudley, E. L. Hu, and J. E. Bowers, “Reactively Sputtered Silicon
Oxynitride for Anti-Reflection Optical Coatings,” Electronic Materials Conference,
Santa Barbara, CA, October, (1990).
93.
S. Geels, J. R. Karin, S. W. Corzine, L. G. Melcer, J. E. Bowers, and L. A. Coldren,
“Low-Threshold and High-speed Vertical-Cavity Diode Lasers,” GOMAC Conference,
November, (1990).
94.
Y. Wey, D. Crawford, J. E. Bowers, M. J. Hafich, and G. Y. Robinson, “High Speed
InGaAs/InP p-i-n Photodiode on Semi-Insulating Substrate,” DARPA/RADC Conference
on Optics in Microwave Radars, Monterey, CA., December, (1990).
95.
J. Wasserbauer, T. Fukushima, J. E. Bowers, S. Zehr, and R. T. Huang, “High Speed
Semi-Insulating Planar Buried Heterostructure Lasers for Microwave Transmission,”
DARPA/RADC Conference on Optics in Microwave Radars, Monterey, CA., December,
(1990).
96.
R. L. Nagarajan, T. Fukushima, J. E. Bowers, R. Geels and L. Coldren, “High Speed
InGaAs/GaAs Strained Multiple Quantum Well Ridge Waveguide Lasers with Low
Damping,” Optical Fiber Communication Conference, paper PD8, San Diego, CA,
Febuary, (1991).
97.
Y. G. Wey, M. Kamegawa, A. Mar, K. J. Williams, K. Giboney, D. L. Crawford, J. E.
Bowers, and M. Rodwell, “Hybrid Integration of an InGaAs/InP PIN Photodiode with an
Ultrafast Sampling Circuit,” Optical Fiber Communication Conference, paper PD8-1,
San Diego, CA, Febuary, (1991).
98.
M. Kamegawa, K. Giboney, J. R. Karin, S. Allen, M. Case, R. Yu, M. J. W. Rodwell, and
J. E. Bowers, “Picosecond GaAs Photodetector Monolithically Integrated with a High
Speed Sampling Circuit,” OSA Proceedings on Picosecond Electronics and Optics
Meeting, 9, Salt Lake City, UT, March 13-15, (1991).
99.
D. L. Crawford, Y. Wey, K. Giboney, J. E. Bowers, and M. J. Rodwell, “Ultrafast Graded
Double Heterostructure p-i-n Photodiode,” OSA Proceedings on Picosecond Electronics
and Optics Meeting, Invited Paper, Salt Lake City, UT, March 13-15, (1991).
100.
Y. G. Wey, D. Crawford, K. Giboney, A. Mar, and J. E. Bowers, “Graded Double
Heterostructure Photodetectors,” Engineering Foundation Conference on High Speed
Optoelectronics, Palm Coast, FL, March, (1991).
101.
R. L. Nagarajan, T. Fukushima, and J E. Bowers, “High Speed and Noise Properties of
Strained InGaAs/GaAs Multiple Quantum Well Lasers,” Engineering Foundation
Conference on High Speed Optoelectronics, Palm Coast, FL, March, (1991).
102.
T. Fukushima, R. L. Nagarajan, and J. E. Bowers, “Modulation and Noise Properties of
InGaAs/GaAs Multiple Quantum Well Lasers,” Engineering Foundation Conference on
High Speed Optoelectronics, Palm Coast, FL, March, (1991).
103.
C. H. Chou, J. E. Bowers, A. R. Selfridge, B. T. Khuri-Yakub, and G. S. Kino, “Residual
and Absolute Timing Jitter in Monolithic and External Cavity Mode-Locked
Semiconductor Lasers,” Engineering Foundation Conference on High Speed
Optoelectronics, Invited Talk, Palm Coast, FL, March, (1991).
104.
D. Derickson, P. Morton, G. Jia, R. Geels, J. E. Bowers and R. Thornton, “Monolithic
0.85 µm Mode Locked Semiconductor Laser Arrays,” Integrated Photonics Research
Conference, Monterey, CA, March, (1991).
105.
D. L Crawford, Y. G. Wey, K. Giboney, M. Rodwell, J. E. Bowers, P. Sylvestre, M.
Hafich and G. Robinson, “3.8 ps FWHM Impulse Response of a Graded Double
Heterostructure P-I-N Photodiode Fabricated on a Semi-Insulating Substrate,” InP and
Related Compounds Conference, Cardiff, Wales, April, (1991).
106.
I.-H. Tan, D. Lishan, R. Mirin, V. Jayaraman, T. Yasuda, E. Hu and J. E. Bowers, “Strain
Induced Lateral Confinement of Excitons in GaAs/AlGaAs Quantum Well by Chemical
Dry Etching,” Electron, Ion and Photon Beams Conference (EIPB), Session D2, Seattle,
WA, May 29-31, (1991).
107.
R. L. Nagarajan, T. Fukushima, J. E. Bowers, R. Geels, and L. Coldren, “Comparison of
Modulation and Noise Properties of Strained InGaAs and Unstrained GaAs Single
Quantum Well Lasers,” Conference on Lasers and Electro Optics (CLEO), paper CTuK1,
Baltimore, MD, May, (1991).
108.
D. L. Crawford, Y. G. Wey, J. E. Bowers, K. Giboney, and M. Rodwell, “New Directions
in High Speed Photodetectors,” Conference on Lasers and Electro Optics (CLEO),
Invited Paper, paper CWB6, 10, 226-227, Baltimore, MD, May, (1991).
109.
J. E. Bowers, “High Speed Semiconductor Lasers and Photodetectors,” Conference on
Lasers and Electro-Optics (CLEO), SHORT COURSE, Baltimore, MD, May, (1991).
110.
R. L. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, “High
Speed Single Quantum Well InGaAs/GaAs Laser Design and Experiment,” Device
Research Conference, paper IIA-1, Boulder, CO, June, (1991).
111.
H. Wada, D. I. Babic, D. L. Crawford, J. J. Dudley, J. E. Bowers, E. L. Hu, J. L. Merz, B.
I. Miller, U. Koren, and M. G. Young, “High Temperature Pulsed Operation of
InGaAsP/InP Surface Emitting Lasers,” Device Research Conference, Post deadline
paper, Boulder, CO, June, (1991).
112.
I.-H. Tan, T. Yasuda, R. Mirin, D. Lishan, V. Jayaraman, C. Prater, E. L. Hu, J. E.
Bowers, and J. Merz, “The Formation of Strain-Induced Quantum Well Wires by Low
Damage Chemical Dry Etching,” LEOS Summer Topical Meeting-Microfabrication for
Photonics and Optoelectronics, Newport Beach, CA, July 29-August 1, (1991).
113.
P. Silvestre, M. J. Hafich, T. Vogt, A. Nanda, G.Y. Robinson, J. J. Dudley, J. E. Bowers,
K. M. Jones, and M. M. Al-Jassim, “Gas Source MBE Growth of InGaAsP for 1.3 µm
Distributed Bragg Reflectors,” 11th MBE Workshop, Austin, TX, September, (1991).
114.
R. L. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, “HighSpeed Single Quantum Well Strained InGaAs/GaAs Lasers,” 17th European Conf. on
Optical Comm. (ECOC)/8th Int. Conf. on Integrated Optics and Optical Fiber Comm.
(IOOC), paper Tu.A4.3, Paris, France, September, (1991).
115.
D. I. Babic, T. E. Reynolds, E. L. Hu, and J. E. Bowers, “Reactive Sputtering of QuarterWave Dielectric Mirrors Using In-Situ Laser Reflectometry,” SPIE #1593, 194-201,
September, (1991).
116.
T. Fukushima, R. L. Nagarajan, J. E. Bowers, R. A. Logan, and T. Tanbun-Ek, “Relative
Intensity Noise Reduction in InGaAs/InP Multiple Quantum Well Lasers with Low
Nonlinear Damping,” The 52nd Autumn Meeting, Japan Society of Applied Physics, paper
11a-ZM-5, Okayama, Japan, October 9-12, (1991).
117.
R. Mirin, I. H. Tan, R. Yasuda, J. E. Bowers, and E. Hu, “InGaAs Quantum Well Wires
Grown on Patterned GaAs Substrates,” American Vacuum Society Annual Symposium,
Seattle, WA, November 11-15, (1991).
118.
I.-H. Tan, T. Yasuda, M. Y. He, R. Mirin, D. Lishan, E. Hu, J. E. Bowers, J. Merz, and
A. Evans, “Optical Study of Strained Quantum Well Wires,” American Vacuum Society
Annual Symposium, Seattle, WA, November 11-15, (1991).
119.
R. L. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, “High
Speed Strained InGaAs/GaAs Quantum Well Lasers,” Government Microcircuit
Applications Conference (GOMAC), paper 10.7, Orlando, FL, November, (1991).
120.
A. Mar, D. Derickson, R. Helkey, J. E. Bowers, “1.4 Picosecond Pulses Directly
Generated Using a Tandem-Contact Actively Mode-locked 1.3 µm Semiconductor
Laser,” LEOS 1991 Annual Meeting, paper SDL14.1, San Jose, CA, November, (1991).
121.
H. Wada, D. I. Babic, D. L. Crawford, J. J. Dudley, J. E. Bowers, E. L. Hu and J. L.
Merz, “Low Threshold High Temperature Pulsed Operation of InGaAs/InP Surface
Emitting Lasers,” LEOS 1991 Annual Meeting, San Jose, CA, November, (1991).
122.
W. B. Jiang, R. Mirin, and J. E. Bowers, “Mode-Locked GaAs Vertical Cavity Surface
Emitting Lasers,” LEOS 1991 Annual Meeting, paper PD2, San Jose, CA, November,
(1991).
123.
D. Babic, M. J. Mondry, L. A. Coldren, and J. E. Bowers, “Refractive Indices of
AlGaInAs on InP as a Function of Composition and Wavelength,” LEOS 1991 Annual
Meeting, San Jose, CA, November, (1991).
124.
D. Derickson, R. J. Helkey, A. Mar, R. L. Thornton, J. E. Bowers, “Benefits of IntraWaveguide Saturable Absorbers in External Cavity Mode-locked Semiconductor Lasers,”
OSA Annual Meeting, paper MG5, San Jose, CA, November, (1991).
125.
M. Ishikawa, T. Fukushima, R. L. Nagarajan, and J. E. Bowers, “Temperature
Dependence of Damping in High Speed Quantum-Well Lasers,” OSA Annual Meeting,
paper TuHH4, San Jose, CA, November, (1991).
126.
D. J. Derickson, R. J. Helkey, A. Mar, J. G. Wasserbauer, Y. G. Wey, J. E. Bowers,
“Comb and Signal Generation Above 100 GHz Using Optoelectronics,” Photonic
Systems for Antenna Applications Conference, Monterey, CA, December, (1991).
127.
I.-H. Tan, R. Mirin, T. Yasuda, M. Y. He, E. Hu, J. E. Bowers, P. Hansma, and A. Evans,
“Study of Partial Strain Release and Surface States Formed on the Side Wall of InGaAs
Quantum Well Wires,” Physics and Chemistry of Semiconductor Interfaces Conference
(PCSI), Death Valley, CA, January 28-30, (1992).
128.
I-H. Tan. T. Yasuda. R. Mirin. D. Lishan, E. Hu. J. Bowers, and J. Merz, "Observation of
Quantum Confinement in Strained Quantum Wires/Dots," Int. Workshop on Quantum
Effect Physics, Electronics, and Applications, Luxor, Egypt, January 6-10, (1992).
129.
I.-H. Tan, T. Yasuda, R. Mirin, D. Lishan, E. Hu, J. E. Bowers, and J. Merz,
“Observation of Quantum Confinement in Strained Quantum Wires/Dots,” Int. Workshop
on Quantum Effect Physics, Electronics, and Applications, Luxor, Egypt, January 6-10,
(1992).
130.
R. L. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, and J. E. Bowers, “Carrier
Transport Effects in High-Speed Quantum-Well Lasers,” Laser Diode Technology and
Applications IV, OE/LASE ‘92 (SPIE Conference #1634), paper 1634-14, Los Angeles,
CA, January, (1992).
131.
D. J. Derickson, J. G. Wasserbauer, R. J. Helkey, A. Mar, J. E. Bowers, D. Coblentz, R.
Logan, and T. Tanbun-Ek, “A Comparison of Colliding Pulse and Self-Colliding Pulse
Monolithic Cavity Mode Locked Semiconductor Lasers,” Optical Fiber Communication
Conference (OFC), paper ThB3, San Jose, CA, Febuary, (1992).
132.
J. E. Bowers, “High-Speed Semiconductor Lasers and Detectors,” Optical Fiber
Communication Conference (OFC), tutorial WI1, San Jose, CA, Febuary, (1992).
133.
R. L. Nagarajan, T. Fukushima, M. Ishikawa, J. E. Bowers, R. S. Geels, and L. A.
Coldren, “Transport Limits in High Speed Quantum Well Lasers,” Optical Fiber
Communication Conference (OFC), paper ThB5, San Jose, CA, Febuary, (1992).
134.
R. L. Nagarajan, and J. E. Bowers, “Carrier Transport in High Speed Quantum Well
Lasers,” Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD
‘92), San Antonio, TX, Febuary, (1992).
135.
J. E. Bowers, “High-Speed Lasers and Detectors,” DOD Fiber Optics Conference,
McLean, VA, March 24-27, (1992).
136.
J. J. Dudley, H. Wada, D. I. Babic, T. E. Reynolds, and J. E. Bowers, “Long Wavelength
Vertical Cavity Lasers,” DOD Fiber Optics Conference, McLean, VA, March 24-27,
(1992).
137.
R. L. Nagarajan, M. Ishikawa, and J. E. Bowers, “Effects of Carrier Transport on
Relative Intensity Noise and Modulation Response in Quantum Well Lasers,” HighSpeed Electronics and Optoelectronics Symposium on Compound Semiconductor Physics
and Devices, (SPIE Conference #1680), paper 1680-11, Somerset, NJ, March, (1992).
138.
A. Mar, J. E. Bowers, R-T. Huang, D. Wolf, W-H. Cheng, C-L. Jiang, R. Agarwal, and
D. Renner, “High-Speed, Low-Threshold InGaAsP Semi-Insulating Buried Crescent
Lasers,” InP and Related Materials Conference, paper THE3, Newport, RI, April 21-24,
(1992).
139.
J. G. Wasserbauer, J. E. Bowers, M. J. Hafich, P. Silvestre, L. M. Woods, and G. Y.
Robinson, “Specific Contact Resistivity of InGaAs/InP p-Isotype Heterojunctions,” InP
and Related Materials Conference, paper THP27, Newport, RI, April 21-24, (1992).
140.
J. J. Dudley, D. L. Crawford, and J. E. Bowers, “Temperature Dependence and Material
Properties of InGaAsP/InP Mirrors,” InP and Related Materials Conference, paper FD4,
Newport, RI, April 21-24, (1992).
141.
J. E. Bowers, “Ultrafast Optoelectronics,” InP and Related Materials Conference,
Plenary Paper, Newport, RI, April 21-24, (1992).
142.
I.-H. Tan, S. Shi, R. Mirin, E. L. Hu, J. Merz, and J. E. Bowers, “Study of the Surface
Cleaning Effects to the InGaAs Quantum Well Wires by Atomic Force Microscopy and
Photoluminescence Spectroscopy,” Spring Conference of Material Research Society
(MRS), San Francisco, CA, April 27-May 1, (1992).
143.
D. J. Derickson, R. J. Helkey, A. Mar, J. G. Wasserbauer, and J. E. Bowers, ”Design of
Multi-Section Mode-Locked Semiconductor Lasers with Intra-Waveguide Saturable
Absorbers,” 1992 Integrated Photonics Research Topical Meeting, paper WC3, New
Orleans, LA, April, (1992).
144.
R. J. Helkey, D. J. Derickson, A. Mar, J. G. Wasserbauer, and J. E. Bowers, “Colliding
Pulse Effects in Mode Locked Semiconductor Diode Lasers,” Quantum Electronics and
Laser Science Conference (CLEO), paper JThB2, Anaheim, CA, May 10-15, (1992).
145.
I.-H. Tan, T. Yasuda, R. Mirin, D. Lishan, E. L. Hu, J. E. Bowers and J. Merz, “Excitons
in Strain-Induced Quantum Well Wires/Dots,” Quantum Electronics and Laser Science
Conference (CLEO), Invited Paper, Anaheim, CA, May 10-15, (1992).
146.
W. B. Jiang, D. Derickson, R. Mirin, and J. E. Bowers, “Importance of Laser Cavity
Length Detuning in Mode-Locked Vertical-Cavity Surface-Emitting Lasers,” Quantum
Electronics and Laser Science Conference (CLEO), paper JThE2, Anaheim, CA, May
10-15, (1992).
147.
I.-H. Tan, Y. L. Chang, S. Shi, R. Mirin, E. Hu, J. Merz and J. E. Bowers, “Evaluation of
the Etch Depth Dependence of Three Dimensional Confinement in Strain-Induced
Quantum Well Dots,” Electron, Ion, and Photon Beams Conference (EIPB), Orlando, FL,
May 26-29, (1992).
148.
P. J. Corvini, M. Hashemi, S. P. DenBaars, and J. E. Bowers, “Fe-Doped Semi-Insulating
InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine,
Trimethylindium, and Ferrocene,” Electronic Materials Conference, Boston, MA, June
25-27, (1992).
149.
D. Tauber, G. Wang, R. S. Geels, J. E. Bowers, and L. A. Coldren, “70 GHz Relaxation
Oscillation in a Vertical Cavity Surface Emitting Laser,” Device Research Conference,
Boston, MA, June, (1992).
150.
D. J. Derickson, R. J. Helkey, A. Mar, J. G. Wasserbauer, and J. E. Bowers, “Microwave
and Millimeter Wave Signal Generation Using Mode-Locked Semiconductor Lasers
With Intra-Waveguide Saturable Absorbers,” IEEE MTT International Microwave
Symposium Digest, paper V-2, 753-756, Albuquerque, NM, June, (1992).
151.
J. R. Karin, D. J. Derickson, R. J. Helkey, J. E. Bowers, and R. L. Thornton, “FieldEnhanced GaAs/AlGaAs Waveguide Saturable Absorbers,” Ultrafast Phenomena VIII
Conference, paper MC21, France, June, (1992).
152.
L. Smilowitz, A. Hays, A. J. Heeger, G. Wang, and J. E. Bowers, “Picosecond Time
Resolved Photoluminescence in MEHPPV-Solution, Film, Gel, and Blend,” Synthetic
Metals: Proceedings of Int. Conf. Synthetic Metals(ICSM), paper SP16-F, Sweden,
August 17, (1992).
153.
W. B. Jiang, D. Derickson, and J. E. Bowers, “Analysis of Laser Pulse Chirping in ModeLocked Vertical Cavity Surface Emitting Lasers,” Engineering Foundation Conference
on High Speed Optoelectronic Devices and Circuits II, Banff, Canada, August 9-13,
(1992).
154.
R. L. Nagarajan, and J. E. Bowers, “Effects of Bandfilling and Thermionic Emission on
the Modulation Response of Quantum Well Lasers,” Engineering Foundation Conference
on High Speed Optoelectronic Devices and Circuits II, Banff, Canada, August 9-13,
(1992).
155.
R. Mirin, I. H. Tan, M. Krishanmurthy, J. E. Bowers, A. C. Gossard, and E. Hu,
“Morphology and Optical Properties of Strained InGaAs Quantum Well Wires,” 7th
Molecular Beam Epitaxy Conference, Germany, August, (1992).
156.
J. G. Wasserbauer, D. J. Derickson, K. Giboney, R. J. Helkey, J. R. Karin, A. Mar, and J.
E. Bowers, “Integrated Optical Transmitters and Receivers Using Multi-Segment Laser
Processes,” IEEE Lasers and Electro-optics Society Meeting on Integrated
Optoelectronics, paper ThC1, Santa Barbara, CA, August, (1992).
157.
J. J. Dudley, M. Ishikawa, B. I. Miller, D. I. Babic, R. Mirin, W. B. Jiang, M. Shimizu, J.
E. Bowers, and E. L. Hu, “InGaAsP (1.3 µm) Vertical Cavity Lasers Using GaAs/AlAs
Mirrors,” 1992 Optical Society of America Annual Meeting, paper FKK7, Albuquerque,
NM, September 20-25, (1992).
158.
M. Shimizu, J. J. Dudley, D. I. Babic, W. B. Jiang, and J. E. Bowers, “Thermal Design
for CW Operation of 1.3 µm GaInAsP Surface-Emitting Lasers,” 1992 Optical Society of
America Annual Meeting, paper C-00173, Albuquerque, NM, September 20-25, (1992).
159.
J. J. Dudley, M. Ishikawa, D. I. Babic, B. I. Miller, R. Mirin, W. B. Jiang, J. E. Bowers,
and E. L. Hu, “144˚ C Lasing of 1.3 µm InGaAsP VCSELs Utilizing GaAs/AlAs
Mirrors,” 13th International Semiconductor Laser Conference, Postdeadline paper,
Takamatsu, Japan, September, (1992).
160.
R. L. Nagarajan, R. P. Mirin, T. E. Reynolds, and J. E. Bowers, “Carrier Confinement
and its Effect on the Internal Quantum Efficiency and Modulation Response of Quantum
Well Lasers,” 13th International Semiconductor Laser Conference, Takamatsu, Japan,
September, (1992).
161.
A. Mar, D. J. Derickson, R. J. Helkey, J. E. Bowers, and D. Botez, “Mode-Locking of
High-Power Resonant-Optical-Waveguide Diode Laser Arrays,” 13th International
Semiconductor Laser Conference, paper N-7, Takamatsu, Japan, September, (1992).
162.
R. J. Helkey, D. J. Derickson, A. Mar, J. G. Wasservauer, J. E. Bowers, and R. L.
Thornton, “Stabilization of Passively Mode-Locked Semiconductor Laser Repetition
Frequency,” IEEE Lasers and Electro-optics Society Annual Meeting, paper DLTA4.2,
Boston, MA, November, (1992).
163.
I.-H. Tan, R. Mirin, V. Jayaraman, S. Shi, E. Hu, J. E. Bowers, and J. Merz, “StrainInduced Quantum Well Wires and Dots Utilizing an InGaAs Stressor,” Second Int.
Symposium on New Phenomena in Mesoscopic Structures, Kauai, HI, December 7-11,
(1992).
164.
J. J. Dudley, D. I. Babic, H. Wada, M. Shimizu, R. Mirin, J. E. Bowers, and E. Hu,
“InGaAsP Vertical Cavity Lasers,” SPIE OE/LASE 1993, paper 1850-10, Los Angeles,
CA, January 18-20, (1993).
165.
R. J. Helkey, A. Mar, W. X. Zou, D. B. Young, and J. E. Bowers, “Mode-locked
Repetition Rate Feedback Stabilization of Semiconductor Diode Lasers,” SPIE OE/LASE
1993, Invited Paper, Los Angeles, CA, January 18-20, (1993).
166.
L. Smilowitz, N. S. Sariciftci, C. Gettinger, A. J. Heeger, F. Wudl, G. Wang, and J. E.
Bowers, “Photexcitation Spectroscopy of Photoinduced Electron Transfer Conducting
Polymer-Buckminsterfullerence Composites,” SPIE OE/LASE 1993, Los Angeles, CA,
January 18-20, (1993).
167.
S. Levy, R. L. Nagarajan, A. Mar, and J. E. Bowers, “Resonant Enhancement of
Semiconductor Laser Modulation Response for Efficient Analog Transmission at 35
GHz,” SPIE OE/LASE 1993, Los Angeles, CA, January 18-20, (1993).
168.
Y. G. Wey, K. S. Giboney, J. E. Bowers, M. J. W. Rodwell, P. Silvestre, P. Thiagarajan,
and G. Y. Robinson, “110 GHz Double Heterostructure GaInAs/InP p-i-n Photodiode,”
Ultrafast Electronic & Optoelectronics Conference, postdeadline paper, San Francisco,
CA, January 25-27, (1993).
169.
W. B. Jiang, M. Shimizu, R. Mirin, T. Reynolds, and J. E. Bowers, “Femtosecond
Periodic Gain Vertical-Cavity Surface-Emitting Lasers,” Ultrafast Electronic &
Optoelectronics Conference, San Francisco, CA, January 25-27, (1993).
170.
G. Wang, R. L. Nagarajan, D. Tauber, and J. E. Bowers, “Picosecond Gain Dynamics in
Vertical Cavity Surface Emitting Laser: Transient Carrier Heating and Gain
Enhancement,” Ultrafast Electronic & Optoelectronics Conference, San Francisco, CA,
January 25-27, (1993).
171.
P. D. Humphrey, and J. E. Bowers, “Tunable Erbium-Doped Fiber Ring Laser Using
Fiber-Birefringence Tuning Technique,” OSA Advanced Solid-State Lasers Topical
Meeting, New Orleans, LA, Febuary 1-4, (1993).
172.
M. Shimizu, J. J. Dudley, D. I. Babic, W. B. Jiang, and J. E. Bowers, “Conditions for
Continuous Wave Operation of 1.3 µm InGaAsP Vertical Cavity Laser,” Optical Fiber
Communication Conf./Int. Conf. on Integrated Optics and Optical Fiber Communication
(OFC/IOOC), paper WH18, San Jose, CA, Febuary 21-26, (1993).
173.
S. Levy, R. L. Nagarajan, A. Mar, and J. E. Bowers, “Fiber Optic Transmission of 35
GHz Subcarrier BPSK Signal Using Resonant Enhancement of a Semiconductor Laser,”
Optical Fiber Communication Conf./Int. Conf. on Integrated Optics and Optical Fiber
Communication (OFC/IOOC), paper WI5, San Jose, CA, Febuary 21-26, (1993).
174.
J. E. Bowers and R. L. Nagarajan, “High Speed Semiconductor Lasers and Detectors,”
Optical Fiber Communication Conf./Int. Conf. on Integrated Optics and Optical Fiber
Communication (OFC/IOOC), Tutorial, San Jose, CA, Febuary 21-26, (1993).
175.
P. Humphrey and J. E. Bowers, “Novel Chromatic Dispersion Measurement Technique
Using a Tunable Erbium-Doped Fiber Laser With Intracavity Test Fiber,” Optical Fiber
Communication Conf./Int. Conf. on Integrated Optics and Optical Fiber Communication
(OFC/IOOC), paper ThA3, San Jose, CA, Febuary 21-26, (1993).
176.
M. Heimbuch, A. L. Holmes, Jr., S. P. DenBaars, L. A. Coldren, and J. E Bowers, “Low
Threshold InxGa1-xAs/InP Quantum Well Lasers Grown with Liquid Group V Sources,”
6th Biennial Workshop on OMVPE, Palm Springs, CA, March 22-24, (1993).
177.
T. Ishikawa, R. L. Nagarajan, and J. E. Bowers, “Theoretical Study of Carrier
Distribution and Small Signal Response in InGaAsP/InP Multiple Quantum Well Lasers”
Integrated Photonics Research Conference (IPR’93), Palm Springs, CA, March 22-24,
(1993).
178.
J. E. Bowers, D. Babic, G. Wang, D. Tauber, W. Jiang, and R. L. Nagarajan, “Vertical
Cavity Laser High Speed Dynamics and Modeling,” Integrated Photonics Research
Topical Meeting, Invited Paper, Palm Springs, CA, March 22-24, (1993).
179.
M. E. Heimbuch, A. L. Holmes, Jr., M. P. Mack, S. P. DenBaars, L. A. Coldren, and J. E.
Bowers, “High Quality Long Wavelength Lasers Grown by Atmospheric Pressure
MOCVD with Liquid Group V Sources,” 5th Int. Conf. On InP and Related Materials,
Paris, France, April 18-22, (1993).
180.
K. S. Giboney, Y. G. Wey, J. E. Bowers, and M. J. W. Rodwell, “High-Speed
GaInAs/InP p-i-n Photodiodes with Integrated Bias Tees,” 5th Int. Conf. On InP and
Related Materials, postdeadline paper, Paris, France, April 18-22, (1993).
181.
R. L. Nagarajan, S. Levy, and J. E. Bowers, “External Cavity Semiconductor Lasers
Suitable for Efficient Transmission of Millimeter Wave Modulated Light,” CLEO ‘93,
paper CMK3, Baltimore, MD, May 2-7, (1993).
182.
D. Babic, Y. Chung, N Dagli, and J. E. Bowers, “Modal Reflectivity of Quarterwave
Mirrors in Vertical-Cavity Lasers,” CLEO ‘93, paper CTuM7, Baltimore, MD, May 2-7,
(1993).
183.
J. E. Bowers, R. L. Nagarajan, and T. Ishikawa, “Picosecond Carrier Transport in
Quantum Well Lasers,” CLEO ‘93, Invited Paper, paper JThA1, Baltimore, MD, May 27, (1993).
184.
R. L. Nagarajan, and J. E. Bowers, “High Speed Lasers and Phototdetectors,”
IEEE/LEOS Workshop on Interconnections within High-Speed Digital Systems, Santa Fe,
New Mexico, May 23-26, (1993).
185.
R. Helkey, W. X. Zou, A. Mar, D. B. Young, and J. E. Bowers, “Curved and Tapered
Waveguide Mode-Locked InGaAs/AlGaAs Semiconductor Lasers Fabricated by
Impurity Induced Disordering,” IEEE 51st Device Research Conference, Santa Barbara,
CA, June 21-23, (1993).
186.
J. J. Dudley, D. I. Babic, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L.
Hu, and J. E. Bowers, “Low Threshold, Electrically Injected InGaAsP (1.3 mm) Vertical
Cavity Lasers on GaAs Substrates,” IEEE 51st Device Research Conference, postdeadline
paper, Santa Barbara, CA, June 21-23, (1993).
187.
A. Mar, R. Helkey, T. Reynolds, D. Botez, C. Zmudzinski, and J. E. Bowers, “Modelocked Multi-segment Resonant-optical Waveguide Diode Laser Arrays,” LEOS 1993,
postdeadline paper, Santa Barbara, CA, July 19-21, (1993).
188.
R. L. Nagarajan, S. Levy, R. Helkey, P. Humphrey, and J. E. Bowers, “Fiber-Optic BPSK
Subcarrier Transmission at 35 GHz over 6.3km using a Grating External cavity
Semiconductor Laser,” LEOS Summer Topical Meeting on Optical Microwave
Interactions, paper T2.2, Santa Barbara, CA, July 19-21, (1993).
189.
A. Mar, R. Helkey, T. Reynolds, J. E. Bowers, “Mode-Locked Multi-Segment ResonantOptical-Waveguide Diode Laser Arrays,” LEOS Summer Topical Meeting on Optical
Microwave Interactions, postdeadline paper, Santa Barbara, CA, July 19-21, (1993).
190.
J. E. Bowers, K. Giboney, Y. G. Wey, and M. Rodwell, “New Concepts in 100 GHz
High-Efficiency Photodetectors,” LEOS Summer Topical Meeting on Optical Microwave
Interactions, Invited Paper, paper M1.1, Santa Barbara, CA, July 19-21, (1993).
191.
R. L. Nagarajan and J. E. Bowers, “High Speed Optoelectronic Devices,” 1993 SBMO
Int. Microwave Conference, Invited Paper, Brazil, August, (1993).
192.
M. Shimizu, W. Jiang, R. P. Mirin, T. E. Reynolds, and J. E. Bowers, “Electrically
Pumped Mode-Locked Vertical-Cavity Semiconductor Lasers,” Japanese Applied
Physics Annual Meeting, Hokaido, Japan, September, (1993).
193.
M. Shimizu, W. Jiang, R. P. Mirin, T. E. Reynolds, and J. E. Bowers, “External-Cavity
Mode-Locked Surface-Emitting Lasers,” Photonic Switching Systems and Devices,
Tokyo, Japan, October 22, (1993).
194.
R. J. Ram, R. A. York, D. I. Babic, and J. E. Bowers, “Classical Analysis of Microcavity
Lasers,” OSA Symposium, paper WDD2, Ontario, Canada, October, (1993).
195.
W. Jiang, and J. E. Bowers, “Effect of Carrier Transport on Mode-locked Vertical-cavity
Semiconductor Lasers,” OSA Symposium, paper WWW3, Ontario, Canada, October,
(1993).
196.
D. I. Babic, R. J. Ram, J. E. Bowers, M. Tan and L. Tang, “Transverse Modes in Cavities
With Distributed Bragg Reflectors,” OSA Symposium, paper MLL2, Ontario, Canada,
October, (1993).
197.
A. Mar, R. Helkey, J. E. Bowers, D. Mehuys and D. Welch, “Mode-Locked Operation of
a Master Oscillator Power Amplifier,” IEEE Lasers and Electro-optics Society Annual
Meeting, San Jose, CA, November 15-18, (1993).
198.
J. J. Dudley, D. I. Babic, L. Yang, R. Mirin, B. I. Miller, R. J. Ram, T. Reynolds, E. L.
Hu, and J. E. Bowers, “Wafer Fused Long Wavelength Vertical Cavity Lasers,” IEEE
Lasers and Electro-optics Society Annual Meeting, paper SCL4.1, San Jose, CA,
November 15-18, (1993).
199.
R. L. Nagarajan and J. E. Bowers, “Effect of Carrier Transport on Wavelength Chirp in
Quantum Well Semiconductor Lasers,” OE/LASE 1994, Physics and Simulation of
Optoelectronic Devices II Conference, paper 2146-24, Los Angeles, CA, January 22-29,
(1994).
200.
R. L. Nagarajan and J. E. Bowers, “Narrowband Millimeter Wave Transmission Systems
at 35 GHz,” AFCEA Fiber Optics and Photonic Conference, paper 6-1, McLean, VA,
March 22-24, (1994).
201.
J. J. Dudley, D. I. Babic, R. P. Mirin, L. Yang, B. I. Miller, E. L. Hu, and J. E. Bowers,
“Wafer Fused, Low Threshold, Long Wavelength Vertical Cavity Lasers on GaAs
Substrates,” AFCEA Fiber Optics and Photonic Conference, paper 6-3, McLean, VA,
March 22-24, (1994).
202.
J. E. Schramm, D. I. Babic, E. L. Hu, J. E. Bowers, and J. L. Merz, “Anisotropy Control
in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon,” IPRM
Conference, paper WE4, Santa Barbara, CA, March 27-31, (1994).
203.
P.J. Corvini and J. E. Bowers, “Avalanche Breakdown in Semi-Insulating Fe:InP,” IPRM
Conference, Postdeadline Paper PDB3, Santa Barbara, CA, March 27-31, (1994).
204.
I.-H. Tan, C. Reaves, J. J. Dudley, A. L. Holmes, Jr., D. I. Babic, E. L. Hu, J. E. Bowers,
and S. DenBaars, “Low-Temperature Pd Direct Bonding and Electrical Transport Across
InP-Pd-GaAs Interfaces,” IPRM Conference, paper ThG4, Santa Barbara, CA, March 2731, (1994).
205.
D. I. Babic, J. J. Dudley, K. Streubel, R. P. Mirin, E. L. Hu, and J. E. Bowers, “Optically
Pumped All-Epitaxial Wafer-Fused 1.52-µm Vertical Cavity Lasers,” IPRM Conference,
paper WA4, Santa Barbara, CA, March 27-31, (1994).
206.
J. J. Dudley, D. I. Babic, R. P. Mirin, L. Yang, B. I. Miller, E. L. Hu, and J. E. Bowers,
“Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity
Lasers on GaAs Substrates,” IPRM Conference, paper WA3, Santa Barbara, CA, March
27-31, (1994).
207.
L. Yang, K. Carey, M. Ludowise, W. Perez, D. E. Mars, J. E. Fouquet, K. Nauka, S.J.
Rosner, R.J. Ram, J.J. Dudley, D. I. Babic, and J. E. Bowers, “Wafer Bonding of InP and
GaAs: Interface Characterization and Device Applications,” IPRM Conference, paper
MP36, Santa Barbara, CA, March 27-31, (1994).
208.
D. A. Tauber, R. Spickermann, R. L. Nagarajan, T. Reynolds, A. L. Holmes, Jr., and J. E.
Bowers, “Distributed Microwave Effects in High Speed Semiconductor Lasers,” IEEE
MTT-S International Microwave Symposium Digest, paper TU1C-1, 47, San Diego, CA,
May 22-28, (1994).
209.
K. S. Giboney, S. T. Allen, M. Rodwell, and J. E. Bowers, “1.5 ps Fall-Time
Measurements by Free-Running Electro-Optic Sampling,” CLEO 1994, paper CME4,
Anaheim, CA, May 8-13, (1994).
210.
R.-C. Yu, R. L. Nagarajan, T. Reynolds, J. E. Bowers, “An Ultrahigh Speed Cryogenic
Optical Fiber Link,” CLEO 1994, paper CThJ2, Anaheim, CA, May 8-13, (1994).
211.
D. A. Tauber, R. Spickermann, R. L. Nagarajan, T. Reynolds, A. L. Holmes, Jr., and J. E.
Bowers, “Inherent Bandwidth Limits in Semiconductor Lasers due to Distributed
Microwave Effects,” CLEO 1994, paper CThB3, 277, Anaheim, CA, May 8-13, (1994).
212.
G. Wang, S. Farfard, D. Leonard, J. E. Bowers, P. Petroff, and J. Merz, “Time Resolved
Photoluminescence in InGaAs Quantum Dots,” IQEC, Anaheim, CA, May 8-13, (1994).
213.
K. S. Giboney, R. Nagrarajan, T. Reynolds, S. Allen, R. P. Mirin, M. Rodwell, and J. E.
Bowers, “172 GHz, 42% Quantum Efficiency p-i-n Travelling-Wave Photodetector,”
Device Research Conference, Postdeadline Paper, Boulder, CO, June 20-22, (1994).
214.
I.-H. Tan., J. E. Bowers, and E. L. Hu, “High Quantum Efficiency and Narrow Detection
Bandwidth of a Resonant In0.53Ga0.47As Photodetector by Using Wafer Fusing,”
Device Research Conference, paper VIA-4, Boulder, CO, June 20-22, (1994).
215.
J. E. Bowers, D. I. Babic, J. J. Dudley, and R. J. Ram, “Long Wavelength Vertical
Cavity Lasers,” Fifth Optoelectronics Conference, Invited Paper, paper 14D3-1,
Makuhari Messe, Chiba, Japan, July 12-15, (1994).
216.
R. L. Nagarajan, R. Yu, T. Reynolds, A. L. Holmes, Jr., J. E. Bowers, and S. DenBaars,
“Cryogenic Microwave Optical Sources,” Engineering Foundation Third Conference on
High Speed Optoelectronic Devices for Communications and Interconnects, Invited
Paper, San Luis Obispo, CA, August 14-18, (1994).
217.
J. J. Dudley, D. I. Babic, R. J. Ram, L. Yang, J. E. Bowers, and E. L. Hu, “Long
Wavelength Surface Emitting Lasers on GaAs Substrates,” Engineering Foundation
Third Conference on High Speed Optoelectronic Devices for Communications and
Interconnects, San Luis Obispo, CA, August 14-18, (1994).
218.
K. Streubel, J. Wallin, J. André, G. Landgren, D. I. Babic, E. Goober, and J. E. Bowers,
“Photopumped Operation of Dry-etched 1.52 µm Vertical-cavity Lasers,” Engineering
Foundation Third Conference on High Speed Optoelectronic Devices for
Communications and Interconnects, San Luis Obispo, CA, August 14-18, (1994).
219.
K. S. Giboney, M. Rodwell, and J. E. Bowers, “Travelling-Wave Photodetectors,”
Engineering Foundation Third Conference on High Speed Optoelectronic Devices for
Communications and Interconnects, Invited Paper, San Luis Obispo, CA, August 14-18,
(1994).
220.
R. L. Nagarajan, K. S. Giboney, R.-C. Yu, D. A. Tauber, and J. E. Bowers, “High Speed
Optoelectronics,” 21st International Symposium on Compound Semiconductors, Invited
Paper, paper WP 3.1, San Diego, CA, September 18-22, (1994).
221.
R .J . Ram, D. I. Babic, R. A. York, and J. E. Bowers, “Limitations to Controlling
Spontaneous Emission in Microcavities with Distributed Mirrors,” International
Semiconductor Laser Conference, paper T3.5, Maui, HI, September 19-23, (1994).
222.
A. V. Uskov, J. R. Karin, R. L. Nagarajan, J. Mørk, and J. E. Bowers, “Ultrafast
Dynamics in Waveguide Saturable Absorbers,” International Semiconductor Laser
Conference, paper P18, Maui, HI, September 19-23, (1994).
223.
E. Goobar, R. J. Ram, R. L. Nagarajan, L. A. Coldren, J. E. Bowers, A. Karlsson, and G.
Bjork, “Quantum Noise and Facet Intensity Correlation in Semiconductor Lasers,”
International Semiconductor Laser Conference, Postdeadline Paper, paper PD1, Maui,
HI, September 19-23, (1994).
224.
E. Goobar, R. J. Ram, R. L. Nagarajan, L. A. Coldren, J. E. Bowers, A. Karlsson, and G.
Bjork, “Quantum Noise and Facet Intensity Correlation in Semiconductor Lasers,”
Research Conference on Quantum Optics, paper # B24, Davos, Switzerland, September
24-29, (1994).
225.
A. Mar, J. E. Bowers, “High-power modelocked semiconductor lasers,” 1994 OSA
Annual Meeting, Invited Paper, paper ThV1, Dallas, TX, October 2-7, (1994).
226.
P. Blixt and J. E. Bowers, “An Optical Technique for Bit and Packet Synchronization,”
LEOS ‘94, 7th Annual Meeting, Invited Paper, paper OC/ON1.3, Boston, MA, October
31-November 3, (1994).
227.
D. I. Babic, J. J. Dudley, K. Streubel, R. P. Mirin, N. Margalit, E. L. Hu, and J. E.
Bowers, “Double-fused 1.52µm vertical-cavity lasers,” LEOS ‘94, 7th Annual Meeting,
Postdeadline Paper, Boston, MA, October 31-November 3, (1994).
228.
R. J. Ram, D. I. Babic, R. A. York, and J. E. Bowers, “Spontaneous Emission in Micro
Cavities with Distributed Mirrors,” LEOS ‘94, 7th Annual Meeting, Invited Paper, paper
SL6, Boston, MA, October 31-November 3, (1994).
229.
D. A. Tauber, R. Spickermann, R. L. Nagarajan, T. Reynolds, A. L. Holmes, Jr., and J. E.
Bowers, “Microwave Propagation Effects in Directly Modulated Semiconductor Lasers,”
Government Microcircuit and Applications Conference ‘94, San Diego, CA, November
7-10, (1994).
230.
D. I. Babic, J. J. Dudley, R. J. Ram, R. P. Mirin, J. E. Bowers, and E. L. Hu, “Long
Wavelength Vertical Cavity Surface Emitting Lasers,” International Electron Device
Meeting ‘94, Invited Paper, paper 31.1, San Francisco, CA, December 11-14, (1994).
231.
D. I. Babic, J. J. Dudley, R. J. Ram, R. P. Mirin, J. E. Bowers, and E. L. Hu, “Long
Wavelength Vertical Cavity Surface Emitting Lasers,” Integrated Photonics Research
Topical Meeting, Invited Paper, paper IFA1, Dana Point, CA, February 23-25, (1995).
232.
A. K. Petersen, T. Reynolds, R. L. Nagarajan, Y.-G. Wey, J. E. Bowers, and M. Rodwell,
“3 MHz - 30 GHz Travelling Wave Optical Front-end Receiver,” OFC ‘95, February 26March 3, (1995).
233.
R. P. Mirin, J. Ibbetson, K. Nishi, A. Gossard, and J. E. Bowers, “1.32µm room
temperature photoluminescence from InGaAs quantum dots on GaAs,” Quantum
Optoelectronics Conference, Dana Point, CA, March 13-15, (1995).
234.
G. Wang, C.-K. Sun, D. Leonard, G. M. Riberio, J. E. Bowers, P. M. Petroff, J.
Oshinowo, and Y. Arakawa, “Exciton Dynamics in InGaAs/GaAs Quantum Dots,”
Quantum Optoelectronics Topical Meeting, Postdeadline Paper, Dana Point, CA, March
13-15, (1995).
235.
J. E. Bowers, “Trends in Ultrafast Optical Devices and Transmission Systems,” Ultrafast
Electronics and Optoelectronics ‘95 Conference, Invited Paper, paper UMA1, Dana
Point, CA, March 13-15, (1995).
236.
S. S. Murtaza, K. A. Anselm, I.-H. Tan, R. V. Chelakara, M. R. Islam, R. D. Dupuis, B.
G. Streetman, J. E. Bowers, E. L. Hu, and J. C. Campbell, “Resonant-Cavity Avalanche
Photodiodes and Narrow Spectral Response Photodiodes,” 1995 IEEE/Cornell
Conference, April, (1995).
237.
J. E. Bowers, K. S. Giboney, and M. Rodwell, “Traveling Wave Photodetectors,” IEEE
MTT-S International Microwave Symposium, Invited Paper, paper TUC3-1, Orlando,
FL, May 14-19, (1995).
238.
U. Bhattacharya, M. J. Mondry, G. Hurtz, I.-H. Tan, R. Pullela, M. Reddy, J. Guthrie, M.
Rodwell, and J. E. Bowers, “Schottky-Collector Heterojunction Bipolar Transistors:
Device Scaling Laws for fmax beyond 500 GHz,” MTT ‘95, Orlando, FL., May 14-19,
(1995).
239.
R-C. Yu, R. L. Nagarajan, T. Reynolds, J. E. Bowers, C. E. Zah, T. Smith, C.
Mohwinkeo, “Ultra High Speed Cryogenic Laser Diodes For Broadband Optical Fiber
Link Applications,” MTT ‘95, Orlando, FL., May 14-19, (1995).
240.
K. S. Giboney, M. Rodwell, and J. E. Bowers, “Field-Screening Effects in TravellingWave and Vertically Illuminated p-i-n Photodetectors,” CLEO ‘95, Paper CFB4,
Baltimore, MD, May 22-26, (1995).
241.
J. E. Bowers, I.-H. Tan, E. L. Hu, and L. Yang, “Wafer Fusion for Telecommunication
Devices on GaAs,” CLEO ‘95, Invited Paper, paper CWB7, Baltimore, MD, May 22-26,
(1995).
242.
R. J. Ram, K. Campman, H. Schmidt, A. Imamoglu, A. Gossard, and J. E. Bowers,
“Intersubband Semiconductor Lasers Without Population Inversion,” QELS ‘95,
Baltimore, MD, May 22-26, (1995).
243.
I.-H. Tan, B. I. Miller, K. S. Giboney, J. E. Bowers, and E. L. Hu, “Air-bridged Coplanar
Long-wavelength Photodetectors,” IPRM Conference, Paper ThB1-5, Sapporo, Japan,
May 9-13, (1995).
244.
J. E. Bowers, “High Speed Time Division Multiplexing (TDM) Systems - from Materials
to Protocols,” IPRM Conference, SHORT COURSE, Sapporo, Japan, May 9-13, (1995).
245.
S. S. Murtaza, I.-H. Tan, R. V. Chelakara, M. R. Islam, A. Srinivasan, K. A. Anselm, J.
E. Bowers, E. L. Hu, R. D. Dupuis, and B. G. Streetman, “High-efficiency, Dualwavelength Wafer-fused Resonant-cavity Photodetetor Operating at Long Wavelengths,”
IPRM Conference, Paper ThP-43, Sapporo, Japan, May 9-13, (1995).
246.
D. I. Babic, J. J. Dudley, K. Streubel, R. P. Mirin, N. Margalit, J. E. Bowers and E. L.
Hu, “Transverse Mode and Polarization Characteristics of Double-fused 1.52µm
Vertical-cavity Lasers,” IPRM Conference, Paper SB1-2, Sapporo, Japan, May 9-13,
(1995).
247.
A. V. Iskov, J. M. Karin, and J. E. Bowers, “Ultrafast Dynamics of Saturation and
Recovery in Waveguide Saturable Absorbers,” ICONO ‘95, St. Petersburg, Russia, June
27-July 1, (1995).
248.
D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars,
L. Yang, and K. Carey, “Room-temperature continuous-wave operation of 1.54 µm
vertical-cavity lasers,” IOOC-95 Conference, Hong Kong, June 26-30, (1995).
249.
R. Mirin, J. Ibbetson, J. E. Bowers, and A. Gossard, “Room Temperature
Photoluminescence at 1.32µm from InGaAs Quantum Dots on GaAs Substrates,” EMC
Conference, Charlottesville, VA, June, (1995).
250.
J. E. Bowers, A. V. Uskov, and J.R. Karin, “Femtosecond Gain and Absorption
Dynamics in Semiconductor Waveguides,” OSA Annual Meeting, Invited Paper, paper
MVV1, Portland, OR, September 10-15, (1995).
251.
J. E. Bowers, “Recent Results of the Thunder and Lightning Project,” OSA Annual
Meeting, Invited Paper, paper WZ1, Portland, OR, September 10-15, (1995).
252.
A. K. Peterson, I.-H. Tan and J. E. Bowers, “High Speed Digital and Analog Receivers,”
LEOS ‘95 Annual Meeting, Invited Talk, San Francisco, CA, October 30-November 2,
(1995).
253.
A. R. Hawkins, T. Reynolds, D. R. England, D. I. Babic, M. Mondry, and J. E. Bowers,
“Silicon Hetero-Interface Photodetector,” LEOS ‘95 Annual Meeting, San Francisco, CA,
October 30-November 2, (1995).
254.
A. K. Petersen, and J. E. Bowers, “Microwave packages for 30 Gbit/s analog and digital
circuits,” Electrical Performance and Electronic Packaging Conference, 152-155,
Portland, OR, October, (1995).
255.
R. Yu, S. Beccue, P. Zampardi, R. Pierson, A. K. Petersen, K. C. Wang, and J. E.
Bowers, “A packaged broadband monolithic variable gain amplifier implemented in
AlGaAs/GaAs HBT technology,” GaAs IC Symposium 1995, 197-200, San Diego,
October, (1995).
256.
J. E. Bowers, P. Blixt, A. Petersen, P. A. Morton, R-C Yu, S. M. Beccue, K. R. Runge, K.
C. Wang, “30 Gbit/s Transmission Experiment Using Directly Modulated Semiconductor
Lasers,” SPIE OE/LASE ‘96, Conference Proceedings, Invited Paper, 2684, 54-57, San
Jose, January 27-February 2, (1996).
257.
S. Zhang, R. L. Nagarajan, A. Petersen and J. E. Bowers, “40 Gbit/s Fiber Optic
Transmission Systems: Are Solitons Needed?” SPIE OE/LASE ‘96, Conference
Proceedings, 2684, 182-185, San Jose, January 27-February 2, (1996).
258.
R.-C. Yu, R. Nagarajan, and J. E. Bowers, “Low Modulation of a Semiconductor Laser,”
SPIE OE/LASE ‘96, Conference Proceedings, Invited Paper, 2684, 10-16, San Jose,
January 27-February 2, (1996).
259.
J. Piprek, D. I. Babic, J. E. Bowers, “Modeling and Optimization of 1.54 µm doublefused VCSELs for CW operation above room temperature,” SPIE OE/LASE ‘96,
Conference Proceedings, 2693, San Jose, January 27-February 2, (1996).
260.
R. J. Ram, C.-K. Sun, J. Ko, G. Wang, E. Goobar, M. Oesterich, J. E. Bowers, and A.
Imamoglu, “Dynamics of Condensing Polaritons,” Physics of Quantum Electronics, 26th
Winter Colloquium on Quantum Electronics, Snowbird, Utah, January 7-10, (1996).
261.
A. R. Hawkins, J. E. Bowers, “Silicon-InGaAs APDs-the best of both worlds,”
WOSCEMMAD ‘96, Santa Fe, New Mexico, February 19-21, (1996).
262.
C.-K. Sun, A. K. Petersen, I.-H. Tan, and J. E. Bowers, “Ultrafast Optical
Telecommunication Devices and Systems,” FST ‘96, Invited Paper, Tsukuba, Japan,
February 21-22, (1996).
263.
P. Blixt, D. I. Babic, N. M. Margalit, T. E. Reynolds, J. E. Bowers, “1 Gbit/s, SingleMode Operation of Vertical-Cavity Lasers Emitting at 1.54 µm,” OFC ‘96, San Jose, CA,
February 25-March 1, (1996).
264.
J. E. Bowers, P. E. Blixt, N. Dagli, A. K. Petersen, M. Rodwell, P. M. Melliar-Smith, S.
Beccue, K. Runge, K. C. Wang, “30 Gbit/s Components and Fiber Optic System
Results,” OFC ‘96, Invited Paper, San Jose, CA, February 25-March 1, (1996).
265.
N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, S. Zhang, D. E. Mars, and J. E.
Bowers, “Laterally Oxidized Long Wavelength CW Vertical-Cavity Lasers,” OFC ‘96,
San Jose, CA, February 25-March 1, (1996).
266.
S. Balsamo, F. Sartori, G. Perrone, C. Naddeo, I. Montrosset, C. Giuliano, R. K. Sink, P.
Blixt, J. E. Bowers, “Dynamic Beam Propagation Method for Modelling Pulse
Propagation in Flared Semiconductor Laser Amplifiers,” Integrated Photonics Research
Symposia (IPR), IMD3, Boston, MA, April 29-May 3, (1996).
267.
D. A. Tauber, M. Horita, A. L. Holmes, B. I. Miller, and J. E. Bowers, “The Microstrip
Laser,” Integrated Photonics Research Symposia (IPR), Boston, MA, April 29-May 3,
(1996).
268.
D. I. Babic, K. Streubel, R. P. Mirin, J. Piprek, N. M. Margalit, J. E. Bowers, E. L. Hu,
D. E. Mars, L. Yang, and K. Carey, “Room-Temperature Performance of Double-Fused
1.54 µm Vertical-Cavity Lasers,” IPRM’96, Invited Paper, Schwabisch Gmund,
Germany, April 21-25, (1996).
269.
J. E. Bowers, A. Petersen, M. Rodwell, A. Shakouri, “High Speed TDM Systems,”
Topical Meeting on Photonics in Switching (PS’96), Invited Paper, Sendai, Japan, April
21-25, (1996).
270.
D. I. Babic, V. Jayaraman, N. M. Margalit, K. Streubel, M. E. Heimbuch, R. P. Mirin, B.
J. Thibeault, J. E. Bowers, E. L. Hu, S. DenBaars, “Long-wavelength vertical-cavity
surface-emitting laser diodes,” Proc. Mat. Res. Soc. Symp., vol. 421, 63-74, San
Francisco, April 8-12, (1996).
271.
R. K. Sink, S. Keller, B. P. Keller, A. Holmes, D. Kapolnek, X. Wu, J. E. Bowers, S.
DenBaars, J. S. Speck, “Cleaved Facets in GaN by Wafer Fusion of GaN to InP,”
Proceedings of the MRS Spring ‘96 Meeting, Symposium C, San Francisco, April 8-12,
(1996).
272.
G. Wang, C.-K. Sun, H. R. Blank, B. Brar, J. E. Bowers, H. Kroemer, and M. H. Pilkuhn,
“Time Resolved Optical Investigation of Spatially Indirect Excitons in GaAs/GaSb
Quantum Dots,” 16th annual Conference on Laser and Electro-optics (CLEO/QUELS
‘96), Anaheim, CA, June 2-7, (1996).
273.
C.-K. Sun, I.-H. Tan, J. E. Bowers, M. Lundstrom, and J. Gray, “Ultrafast Transport
Nonlinearity in Ultrawide-Band Long-Wavelength p-i-n Photodetectors under High
Illumination,” 16th annual Conference on Laser and Electro-optics (CLEO/QUELS ‘96),
Anaheim, CA, June 2-7, (1996).
274.
A. R. Hawkins, T. E. Reynolds, D. England, D. I. Babic, K. Streubel, and J. E. Bowers,
“81 GHz Gain-Bandwidth Product Silicon Hetero-Interface Photodetector,” Device
Research Conference, Santa Barbara, CA, June 24-26, (1996).
275.
J. P. Ibbetson, P. J. Corvini, J. E. Bowers, and U. K. Mishra, “High field transport in nonstoichiometric GaAs,” Electronic Materials Conference, Santa Barbara, CA, June 26-28,
(1996).
276.
C.-K. Sun, G. Wang, M. S. Minsky, J. E. Bowers, S. Keller, B. Keller, and S. P.
DenBaars, “Time-Resolved Photoluminescence Study in InGaN single-quantum-well,”
Electronic Materials Conference, Santa Barbara, CA, June 26-28, (1996).
277.
R. J. Ram, C.-K. Sun, G. Wang, E. Goobar, J. Ko, M. Oestreich, J. E. Bowers, and A.
Imamoglu, “Dynamics of Condensing Polaritons,” IQEC ‘96, Sydney, Australia, July 1419, (1996).
278.
G. Wang, C.-K. Sun, J. E. Bowers, G. Medeiro and P. M. Petroff, “Ultrafast Carrier
Dynamics in InAs Self-Organized Quantum Dots,” IQEC ‘96, Sydney, Australia, July
14-19, (1996).
279.
J. E. Bowers, “Very High Speed TDM Fiber Optic Transmission System,” IEEE/LEOS
Summer Topical Meetings, Invited Talk, Keystone, CO, August 5-9, (1996).
280.
C.-K. Sun, I-H Tan, and J. E. Bowers, “High Power Characteristics of Ultrawide-band
Surface-normal Photodetectors,” SPIE Photonics and Radio Frequency, 2844, 139-143,
Denver, CO, August 7-8, (1996).
281.
D. A. Tauber, M. Horita, A. L. Holmes, Jr., B. I. Miller, J. Piprek, and J. E. Bowers,
“InGaAsP Metal Fused Microstrip Laser,” High Speed Optoelectronics Devices and
Systems, Snowbird, UT, August 8-15, (1996).
282.
N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, J. Piprek, J. E. Bowers, and E. L.
Hu, “Laterally Oxidized Long-Wavelength Vertical Cavity Lasers,” High Speed
Optoelectronics Devices and Systems, Snowbird, UT, August 8-15, (1996).
283.
P. Blixt, D. I. Babic, N. M. Margalit, K. Streubel, and J. E. Bowers, “Multimode Fibre
Transmission Using Room Temperature Double-Fused 1.54 µm Vertical-Cavity Lasers,”
ECOC’96, Oslo, Norway, September 15-19, (1996).
284.
D. Tauber, and J. E. Bowers, “Ultrahigh Speed Semiconductor Lasers,” ILS-XII Annual
Meeting, Invited Talk, Rochester, NY, October 19-27, (1996).
285.
N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, J. Piprek, J. E. Bowers, and E. L.
Hu, “Submilliamp Long Wavelength Vertical Cavity Lasers,” International
Semiconductor Laser Conference (ISLC), Haifa, Israel, October 13-18, (1996).
286.
A. R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J. E. Bowers, “High GainBandwidth Product Silicon Heter-Interface Photodetector,” LEOS ‘96, Postdeadline
paper, Boston, MA, November 18-21, (1996).
287.
J. E. Bowers, M. Rodwell, N. Dagli, M. Melliar-Smith, A. K. Petersen, K. Runge, and K.
C. Wang, “High Speed TDM Components and Systems,” LEOS ‘96, Invited Paper,
Boston, MA, November 18-21, (1996).
288.
J. E. Bowers, S. Butner, L. Coldren, M. Melliar-Smith, M. Varvarigos and A. Shakouri,
“The Multidisciplinary Optical Switching Technology Center,” Photonics Switching
Talk, Tokyo, Japan, December 2, (1996).
289.
J. E. Bowers, “Devices for Microwave Photonics,” MWP ‘96, Plenary Talk, Kyoto,
Japan, December 3-5, (1996).
290.
M. Horita, D. A. Tauber, A. L. Holmes, Jr., B. Miller, and J. E. Bowers, “Metal Fused
Microstrip InGaAsP/InP MQW Lasers,” The 43rd Spring Meeting, The Japan Society of
Applied Physics and Related Societies, Extended Abstracts 3(27) C-4 p1046, Saitama,
Japan, (1996).
291.
P. J. Corvini, J. P. Ibbetson, J. E. Bowers, U. K. Mishra, “Current saturation in nonstoichiometric GaAs: the role of velocity saturation with high trap concentrations,”
Workshop on Non-stoichiometric GaAs and Related Materials, Santa Barbara, (1996).
292.
S. Zhang, N. M. Margalit, T. E. Reynolds and J. E. Bowers, “1.54 µm Vertical-Cavity
Laser Transmission at 2.5 Gbit/s,” OFC ‘97, Dallas, TX, February 16-21, (1997).
293.
W. Wu, A. R. Hawkins and J. E. Bowers, “High Gain-Bandwidth Product Si/InGaAs
Avalanche Photodetectors,” OFC ‘97, Dallas, TX, February 16-21, (1997).
294.
E. R. Hegblom, N. M. Margalit and B. J. Thibeault, L. A. Coldren, and J. E. Bowers,
“Current Spreading in Apertured Vertical Cavity Lasers,” SPIE Photonics West '97, San
Jose, CA, February 13-14, (1997).
295.
W. Wu, A. R. Hawkins and J. E Bowers, “Design of Si/InGaAs Avalanche
Photodetectors for 200 GHz Gain-Bandwidth Product,” Optoelectronic Integrated
Circuits-SPIE Photonics West ‘97, Invited Paper, San Jose, CA, February 8-14, (1997).
296.
N. M. Margalit and J. E. Bowers, “High Temperature 1.55µm Vertical Cavity Lasers
Through Wafer Fusion,” SPIE Optoelectronics ‘97, Invited Paper, San Jose, CA,
February 8-14, (1997).
297.
A. R. Hawkins, W. Wu and J. E. Bowers, “Improvement of Avalanche Photodetectors
Through Integration of InGaAs and Si,” SPIE Optoelectronics ‘97, Invited Paper, 2999,
68-75, San Jose, CA, February 8-14, (1997).
298.
J. E. Bowers, “Novel Wafer Fused Optoelectronic Devices,” EMS’97, Invited Paper,
Sunnyvale, CA, March 27, (1997).
299.
P. Abraham, A. L. Holmes, M. E. Heimbuch, G. Fish, S. P. DenBaars and J. E. Bowers,
“1.55µm Lasers Using Separate Strain Compensation Heterostructure,” Organometalic
Vapor Phase Epitaxy Workshop, Warrendale, PA, April 13-17, (1997).
300.
W. Wu, A. R. Hawkins and J. E. Bowers, “Effect of Electric Field Profile on GainBandwidth Product of InGaAs/Si Avalanche Photodetectors,” CLEO ‘97, Baltimore, MD,
May 18-23, (1997).
301.
A. Uskov, J. Karin and J. E. Bowers, “Ultrafast Switching and Improved Pulse Shaping
in Field-Enhanced Semiconductor Saturable Absorbers,” CLEO ‘97, Baltimore, MD,
May 18-23, (1997).
302.
J. E. Bowers, A. Hawkins, N. Margalit, P. Abraham, A. Black, A. Holmes and E. Hu,
“Wafer Fusion Technology for Optoelectronic Devices,” CLEO ‘97, Invited Paper,
Baltimore, MD, May 18-23, (1997).
303.
P. Abraham, A, K. Black, N. M. Margalit, A. R. Hawkins, S. P. DenBaars and J. E.
Bowers, “Substrate Engineering of 1.55 µm Lasers,” IPRM ‘97, Hyannis, MA, May 1115, (1997).
304.
R. K. Sink, G. Bahir, A. Abare, H. Schmidt, S. P. DenBaars and J. E. Bowers,
“Intersubband Absorption Measured in AlGaN/InGaN MQW,” ‘97 Electronic Materials
Conference, Fort Collins, CA, June 25-27, (1997).
305.
H. Reese, Y.-J. Chiu, A. Shakouri, E. Hu and J. E. Bowers, “Wet Thermal Oxidation of
Low Temperature Al.98Ga.02As,” EMC ‘97, For Collins, CO, June 25-27, (1997).
306.
N. M. Margalit, Y.-J. Chiu, J. E. Bowers and E. L. Hu, “Long-Wavelength VerticalCavity Lasers Through Wafer Fusion,” CLEO Pacific Rim ‘97, Invited Paper, Chiba,
Japan, July 14-18, (1997).
307.
T. Liljeberg and J. E. Bowers, “Velocity Mismatch Limits in Semiconductor Lasers and
Amplifiers,” LEOS’97, San Francisco, CA, July 18, (1997).
308.
R. P. Mirin, A. Gossard and J. E. Bowers, “Characterization of InGaAs Quantum Dot
Lasers with a Single Quantum Dot Layer as an Active Region,” MSS-8, Santa Barbara,
CA, July 10, (1997).
309.
W. Wu, A. R. Hawkins and J. E. Bowers, “Silicon Based Telecommunication Avalanche
Photodetectors,” OECC ‘97, Invited Paper, Seoul, Korea, July 8-11, (1997).
310.
N. M. Margalit, Y.-J. Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. E.
Bowers and E. L. Hu, “120 0C Pulsed Operation from a 1.55 µm Vertical-Cavity Laser,”
IEEE/LEOS Summer Topicals, Invited Paper, Piscataway, NJ, August 11- 18, (1997).
311.
J. E. Bowers, “Long Distance Transmission Using 1.55 µm VCSELs: Issues and
Results,” IEEE/LEOS Summer Topicals, Invited Paper, Montreal, Canada, August 1115, (1997).
312.
A. Shakouri and J. E. Bowers, “Heterostructure Integrated Thermionic Refrigeration,”
International Conference on Thermoelectrics, Dresden, Germany, August, (1997).
313.
L. Rushing, A. Shakouri, P. Abraham, and J. E. Bowers, “Micro Thermoelectric Coolers
for Integrated Applications,” International Conference on Thermoelectrics, Dresden,
Germany, August, (1997).
314.
A. Shakouri, E. Lee, D. Smith, V. Narayanamurti and J. E. Bowers, “Thermoelectric
Effects in Submicron Heterostructure Barriers,” Workshop on Thermophysical
Phenomena in Microscale Sensors, Devices and Structures, Baltimore, MD, August,
(1997).
315.
N. M Margarlit, Y.-J. Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, E. Hu
and J. E. Bowers, “Vertical Cavity Surface Emitting Lasers Operating at 1550 nm,” MiniSymposium on Devices and Systems for Optical Interconnects and Data Links, Invited
Paper, Grasmere, England, September 1-4, (1997).
316.
Y.-J. Chiu, S. Fleischer and J. E. Bowers, “Subpicosecond (570fs)Response of p-i-n
Traveling Wave Photodetector Using Low-Temperature-Grown GaAs,” ‘97 Microwave
Photonics Conference, Duisburg/Essen, Germany, September 3-5, (1997).
317.
J. E. Bowers, A. R. Hawkins and N. M. Margalit, “Novel Optoelectronic Devices Using
Wafer Bonding,” 1997 American Vacuum Society Annual Meeting, Invited Paper, San
Jose, October 20, (1997).
318.
C. Chang, K. D. Pedrotti, A. Price, A. D. Campana, D. Meekers, S. M. Beccue, D. Wu,
K. C. Wang, A. Metzger, P. M. Asbeck, D. Huff, N. Kwong, M. Swatt, S. Z. Zhang, and
J. E. Bowers, “40 Gb/s WDM Cross-Connect With an Electronic Switching Core:
Preliminary Results from the WEST Consortium,” LEOS ‘97, Invited Talk, San
Francisco, CA, November 11-13, (1997).
319.
B. Liu, A. Shakouri and J. E. Bowers, “Fused Vertical Directional Couplers,” LEOS ‘97,
San Francisco, CA, November 11-13, (1997).
320.
A. R. Hawkins and J. E. Bowers, “High-Speed Wafer-Fused Photodetectors,” LEOS ‘97,
Invited Paper, San Francisco, CA, November 11-13, (1997).
321.
Y.-J. Chiu, S. Fleischer and J. E. Bowers, “Low-temperature Grown GaAs Traveling
Wave PIN Photodetector With High Bandwidth,” LEOS ‘97, San Francisco, CA,
November 11-13, (1997).
322.
R. K. Sink, A. C. Abare, P. Kozodoy, M. P. Mack, S. Keller, L. A. Coldren, S. P.
DenBaars and J. E. Bowers, “Pulsed Operation of Cleaved-Facet InGaN Laser Diodes,”
Materials Research Society Symposium Fall Meeting 1997, Boston, MA, December 1-5,
(1997).
323.
K. A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes Jr., Y.-L. Chang,
P. Abraham, J. E. Bowers and E. L. Hu, “Fusion Bonding: Hetero-interfacial Materials
Analysis and Device Application,” SPIE, San Jose, CA, January 26, (1998).
324.
J. E. Bowers, Y.-J. Chiu, S. B. Fleischer and A. Gossard, “High Power Characteristics of
560 GHz Bandwidth Traveling Wave Photodetectors,” PSAA, January, (1998).
325.
B. Liu, A. Shakouri, P. Abraham, B. Kim and J. E. Bowers, “Fused Vertical Couplers,”
OFC ‘98, San Jose, CA, February 22-27, (1998).
326.
J. E. Bowers and T. Liljeberg, “High-Speed Semiconductor Lasers and Photodetectors,”
OFC’98, Short Course, San Jose, CA, February 22-27, (1998).
327.
K. D. Pedrotti, C. E. Change, A. Price, S. M. Beccue, A. D. Campana, G. Gutierrez, D.
Meeker, D. Wu, K. C. Wang, A. Metzger, P. M Asbeck, D. Huff, N. Kwong, M. Swass,
S. Z. Zhang, J. E. Bowers, “West 120-Gbit/s 3X3 Wavelength-Division Multiplexd
Cross-Connect,” OFC’98, San Jose, CA, February 22-27, (1998).
328.
B. G. Kim, A. Shakouri, B. Liu, and J. E. Bowers, “Improved Extinction Ratio in Ultra
Short Directional Couplers Using Asymmetric Structures,” Integrated Photonics
Research Conference, Victoria, British Columbia, Canada, March 30-April 1, (1998).
329.
J. E. Bowers, N. Margalit, A. Black, A. Hawkins, B. Liu, A. Shakouri, P. Abraham and
E. Hu, “Wafer Fused Optical Devices,” IPR’98, Victoria, British Columbia, Canada,
March 30-April 1, (1998).
330.
P. Abraham, J. Piprek, S. P. Denbaars and J. E. Bowers, “Effects of an InGaP Electron
Barrier Layer on 1.55mm Laser Diode Performance,” IPRM ’98, Tsukuba, Japan, May
11-15, (1998).
331.
A. Shakouri, P. Abraham, C. LaBounty and J. E. Bowers, “InGaAsP Based
Heterostructure Integrated Thermionic Coolers” International Conference on
Thermoelectrics, Nagoya, Japan, May 24-28, (1998).
332.
J. E. Bowers and T. Liljeberg, “High-Speed Semiconductor Lasers and Photodetectors,”
CLEO/IQEC ’98, Short Course, San Francisco, CA, May 3-8, (1998).
333.
J. E. Bowers, “Innovative Optoelectronic Devices and Integrated Circuits Utilizing Wafer
Bonding,” Future Trends in Microelectronics Workshop, Invited Paper, Ile des Embiez,
France, May 31-June 5, (1998).
334.
Y.-J. Chiu, S. B. Fleischer, J. E. Bowers, A. C. Gossard, and U. K. Mishra, “High-Power,
High-Speed, Low-Temperature-Grown GaAs p-i-n Traveling-Wave Photodetctor,”
CLEO ‘98, San Francisco, CA, May 5-9, (1998).
335.
A. Shakouri, C. La Bounty, P. Abraham and J. E. Bowers, “Thermionic Emission
Cooling in Single Barrier and Superlattice Heterostructures,” 2nd Microtherm Workshop
and Tutorial, Albuquerque, NM, June 13-14, (1998).
336.
S. Chichibu, A. Abare, M. Mack, M. Minsky, T. Deguchi, D. Deguchi, D. Cohen, P.
Kozodoy, S. B. Fleischer, S. Keller, J. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A.
Coldren, S. P. DenBaars, K. Wada, T. Sota, and S. Nakamura, “Optical Properties of
InGaN Quantum Wells,” E-MRS Spring Meeting, Strasbourg, France, June 16-19, (1998).
337.
K. A. Black, S. Mathis, P. Abraham, J. E. Bowers, E. L. Hu, “Structural and Chemical
Analysis of the GaAs/InP Wafer Bonded Interface,” 40th EMC, Charlottesville, Virginia,
June 24-26, (1998).
338.
A. Shakouri, P. Abraham and J. E. Bowers, “Nonisothermal Thermionic Emission in
InGaAsP Heterostructures,” Technical Program with Abstracts of the 40th Electronic
Materials Conference, Charlottesville, Virginia, June 24-26, (1998).
339.
A. V. Uskov, J. LeBihan, J. R. Karin, J. E. Bowers, and J. McInerney, “Mechanisms of
Saturation in Pulse Propagation Through Bulk Semiconductor Absorbers,” XVI
International Conference on Coherent and Nonlinear Optics Technical Digest, Moscow,
Russia, June 29-July 3, (1998).
340.
A. Shakouri, B. Liu, P. Abraham and J. E. Bowers, “Wafer Fused Optoelectronics for
Switching,” Digest of the 1998 IEEE/LEOS Summer Topical Meetings on Broadband
Optical Networks and Technologies: An Emerging Reality, Invited Paper, MC1, pp. 7-8,
Monterey, CA, July 20-22, (1998).
341.
S. Chichibu, H. Marchand, S. Keller, P. Fini, J. Ibbetson, M. Minsky, S. B. Fleischer, J.
Speck, J. E. Bowers, E. Hu, U. Mishra, S. DenBaars, T. Deguchi, T. Sota, and S.
Nakamura, “Exciton Localization in InGaN Quantum Wells Grown on Lateral
Epitaxially Overgrown (LEO) GaN,” ISBLLED, Th-P42, Chiba, Japan, September,
(1998).
342.
K. Suzuki, M. S. Minsky, S. B. Fleischer, R. A. Hogg, S. Kako, E. Hu, J. E. Bowers and
Y. Arakawa, “Radiative Lifetimes of Spatially Indirect Excitons in Type-II GaSb/GaAs
Self-assembled Quantum Dots,” 25th International Symposium on Compound
Semiconductors (ISCS ’98), Conference Digest, pp. 475-480, Nara, Japan, October 12-16,
(1998).
343.
C. LaBounty, A. Shakouri, P. Abraham, J. Piprek, and J. E. Bowers, “Thermionic Coolers
Using III-V Materials,” IEEE Cool Electronics (ICE) Workshop, Washington D.C.,
October 15-16, (1998).
344.
Y.-J. Chiu, S. Z. Zhang, S. B. Fleischer, J. E. Bowers and U. K. Mishra, “1.55mm
Absorption, High Speed, High Saturation Power, P-I-N Photodetector Using LowTemperature Grown GaAs,” IEEE Microwave Photonics Meeting, Conference Digest,
pp. 181-184, Princeton, NJ, October 12-14, (1998).
345.
S. Z. Zhang, Y.-J. Chiu, P. Abraham, and J. E. Bowers, “Polarization-Insensitive
Multiple-Quantum-Well Travelling-Wave Electroabsorption Modulators with 18 GHz
Bandwidth and 1.2 V Driving Voltage at 1.55 mm,” IEEE Microwave Photonics Meeting,
Conference Digest, pp. 33-36, Princeton, NJ, October 12-14, (1998).
346.
K. A. Black, N. M. Margalit, E. R. Hegblom, P. Abraham, Y.-J. Chiu, J. Piprek, J. E.
Bowers and E. L. Hu, “ Double-Fused 1.5µm Vertical Cavity Lasers Operating
Continuous-Wave up to 71 0C,” IEEE International Semiconductor Laser Conference,
Nara, Japan, October 4-8, (1998).
347.
Y. Zhang, J. Piprek, N. Margalit, M. Anzlowar, and J. E. Bowers, “Cryogenic HighSpeed Operation of Double-Fused 1.5mm Vertical-Cavity Lasers,” IEEE International
Semiconductor Laser Conference, Conference Digest, pp. 117-118, Nara, Japan, October
4-8, (1998).
348.
J. Piprek, P. Abraham and J. E. Bowers, “Effects of Quantum Well Recombination
Losses on the Internal Differential Efficiency of Multi-Quantum-Well Lasers,” IEEE
International Semiconductor Laser Conference, Conference Digest, pp. 167-168, Nara,
Japan, October 4-8, (1998).
349.
E. L. Hu, K. A. Black, N. Margalit, P. Abraham, J. Piprek, E. R. Hegblom, Y.-J. Chiu, A.
Karim, and J. E. Bowers, “Advancements in Long Wavelength Vertical Cavity Lasers,”
OSA Conference, Invited Paper, Baltimore, MD, October 4-9, (1998).
350.
C. Kadow, A. Jackson, J. Ibbetson, A. Gossard, S. Fleischer, and J. E. Bowers, “LTGGaAs Grown on Silicon Substrates for THz-Photomixer Applications,” Symposium on
Nonstoichiometric III-V Compounds, Erlangen, Germany, October 5-7, (1998).
351.
J. E. Bowers, “Wafer Fusion for Optoelectronic Integration,” U.S. Japan Joint
Optoelectronics Project Expert’s Workshop, Nara, Japan, October 9, (1998).
352.
A. Shakouri, C. LaBounty, P. Abraham, J. Piprek, and J. E. Bowers, “Enhanced
Thermionic Emission Cooling in High Barrier Superlattice Heterostructures,” Material
Research Society Fall Meeting, Invited Paper, Conference Digest, pp. 449-458, Boston,
MA, November 30-December 4, (1998).
353.
B. Liu, A. Shakouri, P. Abraham, Y.-J. Chiu, S. Zhang, and J. E. Bowers, “InP/GaAs
Fused Vertical Coupler Filters,” 11th Annual Meeting of IEEE Lasers and Electro-Optics
Society (LEOS ’98), Conference Digest, pp. 18-19, Orlando, Florida, December 1-4,
(1998).
354.
Y.-J. Chiu, V. Kaman, S. Z. Zhang, J. E. Bowers, and U. K. Mishra, “A Novel 1.54mm
N-I-N Photodetector Based on Low-Temperature Grown GaAs,” 11th Annual Meeting of
IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (LEOS ’98), Conference
Digest, pp. 155-156, Orlando, Florida, December 1-4, (1998).
355.
S.P. DenBaars, A.C. Abare, M.P. Mack, M. Hansen, R.K. Sink, P. Kozodoy, S. Keller,
J.S. Speck J.E. Bowers, U.K. Mishra, and L.A. Coldren, “Blue InGaN MQW Laser
Diodes on Sapphire” 11th Annual Meeting of IEEE Lasers and Electro-Optics Society
1998 Annual Meeting (LEOS ’98), Conference Digest, pp. 346-347, Orlando, Florida,
December 1-4, (1998).
356.
A. Shakouri, B. Liu, P. Abraham, and J. E. Bowers, “3D Photonic Integrated Circuits for
WDM Applications,” SPIE’s International Symposium, Conference Digest, pp. 181-204,
San Jose, CA, January 25-26, (1999).
357.
J. Piprek, K. Takiguchi, A. Black, P. Abraham, A. Keating, V. Kaman, S. Z. Zhang and J.
E. Bowers, “Analog Modulation of 1.55mm Vertical-Cavity Lasers,” SPIE’s
International Symposium LASE ’99 Vertical Cavity Surface Emitting Lasers III, eds. K.D.
Choquette and C. Lei, San Jose, CA, January 23-29, (1999).
358.
J. E. Bowers, S. Z. Zhang, P. Abraham, Y.-J. Chiu and V. Kaman, “Low Drive Voltage,
High Speed Travelling-Wave Electroabsorption Modulators,” PSAA-9, Invited Paper,
Monterey, CA, February 14-17, (1999).
359.
J. E. Bowers, “High-Speed Semiconductor Lasers and Photodetectors,” OFC/IOOC ‘99,
Short Course, San Diego, CA, February 21-26, (1999).
360.
B. Liu, A. Shakouri, P. Abraham, and J. E. Bowers, “Push-Pull Fused Vertical Coupler
Switch,” OFC/IOOC ‘99, San Diego, CA, February 21-26, (1999).
361.
S. Z. Zhang, V. Kaman, A. Keating, Y.-J. Chiu, P. Abraham, and J. E. Bowers, “30
Gbit/s Operation of a Travelling-Wave Electroabsorption Modulator,” OFC/IOOC ’99,
San Diego, CA, February 21-26, (1999).
362.
J. E. Bowers, “The Physics of the Best Lasers for Communications,” Symposium for the
American Physical Society’s March Meeting, Invited Paper, Atlanta, GA, March 20-26,
(1999).
363.
S. B. Fleischer, S. Keller, A. C. Abare, L. A. Coldren, U. K. Mishra, S. P. DenBaars, and
J. E. Bowers, “Picosecond Carrier Transport and Capture for InGaN/GaN Single and
Multiple Quantum Wells,” OSA Ultrafast Electronics and Optoelectronics Topical
Meeting, Conference Digest, pp.135-138, Snowmass Village at Aspen, Colorado, April
12-16, (1999).
364.
C. Kadow, J. P. Ibbetson, S. B. Fleischer, A. C. Gossard, and J. E. Bowers, “Ultrafast
Response of ErAs Islands in GaAs,” OSA Ultrafast Electronics and Optoelectronics
Topical Meeting, Conference Digest, pp. 139-145, Snowmass Village at Aspen,
Colorado, April 12-16, (1999).
365.
K. A. Black, P. Abraham, A. Karim, J. E. Bowers, and E. L. Hu, “Improved
Luminescence from InGaAsP/InP MQW Active Regions Using a Wafer Fused
Superlattice Barrier,” IPRM ‘99, Conference Digest, pp. 357-360, Davos, Switzerland,
May 16-20, (1999).
366.
A. Shakouri, C. LaBounty, P. Abraham, J. Piprek, and J. E. Bowers, “InP-based
Thermionic Coolers,” IPRM ‘99, Conference Digest, pp.463-465, Davos, Switzerland,
May 16-20, (1999).
367.
K. A. Black, J. Piprek, P. Abraham, A. Keating, Y.-J. Chiu, E. L. Hu, and J. E. Bowers,
“Long Wavelength Vertical Cavity Lasers,” IPRM ‘99, Invited Paper, Conference
Digest, 271-276, Davos, Switzerland, May 16-20, (1999).
368.
J. E. Bowers and T. Liljeberg, “High Speed Semiconductor Lasers and Photodetectors,”
CLEO ’99, Short Course, Baltimore, MD, May 23-28, (1999).
369.
J. Piprek, K. A. Black, P. Abraham, E. L. Hu, and J. E. Bowers, “Abrupt Self-Switching
in Fused GaAs/InP Vertical-Cavity Lasers,” Conference on Lasers and Elecro-Optics
(CLEO), Baltimore, MD, May 23-28, (1999).
370.
A. Keating, A. Black, A. Karim, Y.-J. Chiu, P. Abraham, C. Harder, E. Hu, and J. E.
Bowers, “High Temperature, Optically Pumped, 1.55mm VCSEL Operating at 6 Gb/s,”
57th Device Research Conference, Santa Barbara, CA, June 28-30, (1999).
371.
A. Shakouri, C. LaBounty, P. Abraham, Y.-J. Chiu, and J. E. Bowers, “Temperature
Dependence of Thermionic Emission Cooling in Single Barrier and Superlattice
Heterostructures,” Electronic Materials Conference, Santa Barbara, CA, June 30-July 2,
(1999).
372.
P. Abraham, S. P. DenBaars, and J. E. Bowers, “MOCVD Growth of Zn-doped StrainedQW Active-Region for 1.55mm Double-Fused VCSEL,” EW-MOVPE VIII, Prague,
Czechoslovakia, June 8-11, (1999).
373.
A. Shakouri, B. Liu, and J. E. Bowers, “Fused Photonic Integrated Circuits for Optical
Switching,” Photonics and Switching ’99, Santa Barbara, CA, July 21-23, (1999).
374.
J. Piprek, P. Abraham, and J. E. Bowers, “Efficiency Analysis of Quantum Well Lasers
Using PICS3D,” Integrated Photonics Research Conference, Santa Barbara, CA, July,
(1999).
375.
C. LaBounty, A. Shakouri, P. Abraham, and J. E. Bowers, “Design of Integrated Thin
Film Coolers,” 18th International Conference on Thermoelectrics, Baltimore, MD,
August 29-September 2, (1999).
376.
S. Huxtable, A. Shakouri, P. Abraham, Y. Chiu, X. Fan, J. E. Bowers and A. Majumdar,
“Thermal Conductivity of Indium Phosphide Based Superlattices,” 18th International
Conference on Thermoelectrics, Baltimore, MD, August 29-September 2, (1999).
377.
C. Kadow, A. W. Jackson, S. Matsura, G.A. Blake, J. E. Bowers, and A. C. Gossard,
“Materials Aspects of Photomixers,” Workshop on Photonic Local Oscillators, Bonn,
Germany, August 23-24, (1999).
378.
J. Piprek, P. Abraham, and J. E. Bowers, “Self-consistent analysis of high-temperature
effects on InGaAsP/InP lasers,” 26th IEEE International Symposium on Compound
Semiconductors (ISCS), WeP13, pp. 379-382, Berlin, Germany, August, (1999).
379.
A. Keating, K. A. Black, A. Karim, Y.-J. Chiu, P. Abraham, C. Harder, E. Hu, and J. E.
Bowers, “6 Gb/s Optically Pumped 1.55mm VCSEL Operating up to 1050 C,” ECOC ’99,
Nice, France, September 26-30, (1999).
380.
B. E. Olsson, P. Ohlen, L. Rau, G. Rossi, O. Jerphagnon, R. Doshi, D. S. Humphries, D.
J. Blumenthal, V. Kaman, and J. E. Bowers, “Wavelength Routing of 40 Gbit/s Packets
with 2.5 Gbit/s Header Erasure/Rewriting Using an All-Fiber Wavelength Converter,”
ECOC ’99, Nice, France, September 26-30, (1999).
381.
J. E. Bowers, G. Fish, L. Coldren, B. Liu, and A. Shakouri, “In GaAsP Optical Cross
Connect Technologies,” OSA Annual Meeting, Invited Paper, Santa Clara, CA,
September 26-October 1, (1999).
382.
C. Kadow, A. W. Jackson, A. C. Gossard, J. E. Bowers, S. Matsuura, G. A. Blake, “ErAs
Islands in GaAs for THz Applications,” ITQW ’99, Bad Ischl, Austria, September,
(1999).
383.
P. Abraham, K. A. Black, A. Karim, J. Piprek, Y.-J. Chiu, B. Liu, A. Shakouri, S.K.
Mathis, E. L. Hu, and J. E. Bowers, “VCSEL and High-Performance Photonics Enabled
by Wafer Bonding,” 5th International Symposium on Semiconductor Wafer Bonding
Science Technology, Invited Paper, Honolulu, Hawaii, October 17-22, (1999).
384.
C. Kadow, A. W. Jackson, A. C. Gossard, J. E. Bowers, S. Matsuura, and G. A. Blake,
“Self Assembled ErAs Islands in GaAs for THz Applications,” 2nd Symposium on Non
Stoichiometric III-V Compounds, Erlangen, Germany, October, (1999).
385.
A. Keating, B. Riou, C. Harder, and J. E. Bowers, “8-Gb/s Free Space Transmission Over
150 Meters Using a 980 nm Laser Diode,” LEOS ‘99, Conference Digest, pp. 299-300,
San Francisco, CA, November 8-11, (1999).
386.
Y.-J. Chiu, S. Z. Zhang, V. Kaman, J. P. Ibbetson, J. E. Bowers, and U.K. Mishra, “Bias
Dependent Performance of 1.55mm Absorption High-Speed N-I-N Photodetectors Using
Low-Temperature Grown GaAs,” LEOS ‘99, Conference Digest, pp. 868-869, San
Francisco, CA, November 8-11, (1999).
387.
C.-K. Sun, J.-C. Wang, T.-M. Liu, Y.-J. Chiu, and J. E. Bowers, “Electron Trapping
Time Versus Annealing Temperature in Low Temperature Grown GaAs,” LEOS ‘99,
Conference Digest, pp. 633-634, San Francisco, CA, November 8-11, (1999).
388.
B. Liu, A. Shakouri, P. Abraham, and J. E. Bowers, “Wavelength Multiplexers by
Cascading 3D Vertical Couplers,” LEOS ‘99, Conference Digest, pp. 409-410, San
Francisco, CA, November 8-11, (1999).
389.
C. LaBounty, A. Shakouri, P. Abraham, and J. E. Bowers, “Integrated Cooling for
Optoelectronic Devices,” SPIE International Optoelectronics Symposium, Conference
Digest, pp. 69-75, San Jose, CA, January 24-27, (2000).
390.
J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and
Optimization of 420 nm InGaN/GaN Laser Diodes,” SPIE International Optoelectronics
Symposium, Conference Digest, pp. 28-39, San Jose, CA, January 24-27, (2000).
391.
B. Riou, E. S. Björlin, A. Keating, K.A. Black, J. Piprek, P. Abraham, Y.-J. Chiu, and J.
E. Bowers, “1.3mm Vertical Cavity Amplifier,” OFC ‘2000, Baltimore, MD, March 710, (2000).
392.
J. E. Bowers, T. Liljeberg, “High-Speed Semiconductor Lasers,” OFC ‘2000, Short
Course, Baltimore, MD, March 7-10, (2000).
393.
B. Liu, A. Shakouri, P. Abraham, and J. E. Bowers, “Optical Add/Drop Multiplexers
Based on X-Crossing Vertical Coupler Filters,” OFC ‘2000, Conference Digest, pp. 266268, Baltimore, MD, March 7-10, (2000).
394.
C. LaBounty, A. Shakouri, G. Robinson, L. Esparza, P. Abraham, and J. E. Bowers,
“Experimental Investigation of Thin Film InGaAsP Coolers,” MRS ‘2000 Spring
Meeting, San Francisco, CA, April 23-28, (2000).
395.
X. Fan, G. Zeng, E. Croke, G. Robinson, C. LaBounty, C. C. Ahn, A. Shakouri, and J. E.
Bowers, “P-Type SiGe/Si Superlattice Cooler,” MRS ‘2000 Spring Meeting, San
Francisco, CA, April 23-28, (2000).
396.
A. Karim, K. A. Black, P. Abraham, D. Lofgreen, Y.-J. Chiu, and J. E. Bowers, “80°C
CW Operation of Long Wavelength VCSEL Using a Superlattice Barrier,” Indium
Phosphide and Related Materials Conference, Postdeadline Paper, Williamsburg, VA,
May 14-18, (2000).
397.
X. Fan, G. Zeng, E. Croke, G. Robinson, C. LaBounty, A. Shakouri, and J. E Bowers,
“N- and P-Type SiGe/Si Superlattice Coolers,” 7th Intersociety Conference on Thermal
and Thermomechanical Phenomena in Electronic Systems (ITHERM ‘2000), Las Vegas,
NV, May 23-26, (2000).
398.
X. Fan, G. Zeng, E. Croke, G. Robinson, C. LaBounty, A. Shakouri, and J. E Bowers,
“SiGe Thin Film Cooler,” 7th Intersociety Conference on Thermal and
Thermomechanical Phenomena in Electronic Systems (ITHERM ‘2000), Las Vegas, NV,
May 23-26, (2000).
399.
C. LaBounty, A. Shakouri, P. Abraham, and J. E. Bowers, “Two Stage Monolithic
Coolers,” 7th Intersociety Conference on Thermal and Thermomechanical Phenomena in
Electronic Systems (ITHERM ‘2000), Conference Digest, pp.44-47, Las Vegas, NV, May
23-26, (2000).
400.
X. Fan, G. Zeng, C. Luo, E. Croke, D. Clarke, A. Shakouri, and J. E. Bowers, “Thermal
Conductivity of SiGe/Si and SiGeC/Si Superlattices and their Application to
Thermoelectric/Thermionic Cooling,” 14th Symposium on Thermophysical Properties,
Abstract, Boulder, CO, June 25-30, (2000).
401.
M. Raburn, B. Liu, J. E. Bowers, and P. Abraham, “Double Fused InP/InGaAsP Vertical
Coupler Beam Splitter,” Integrated Photonics Research Conference, Quebec, Canada,
July 12-15, (2000).
402.
A. Karim, K. A. Black, E. S. Björlin, P. Abraham, P. Abraham, Y.-J. Chiu, J. Piprek, and
J. E. Bowers, “Long Wavelength Vertical Cavity Lasers and Amplifiers,”
Optoelectronics and Communications Conference, Invited Paper, Chiba, Japan, July 1114, (2000).
403.
J.-W. Shi, Y.-S. Yang, C.-K. Sun, Y.-J. Chiu, and J. E. Bowers, “GaAs-Based LongWavelength Traveling-Wave Photodetector,” SPIE Photonics Taiwan, Taipei, Taiwan,
July 26-28, (2000).
404.
C. LaBounty, D. Vashaee, X. Fan, G. Zeng, P. Abraham, A. Shakouri, and J. E. Bowers,
“P-type InGaAs/InGaAsP Coolers,” 19th International Conference on Thermionic
Coolers, Cardiff, Wales, August 20-24, (2000).
405.
C. LaBounty, G. Almaneau, A. Shakouri, X. Fan, G. Zeng, and J. E. Bowers, “Sb-based
III-IV Cooler,” 19th International Conference on Thermionic Coolers, Cardiff, Wales,
August 20-24, (2000).
406.
V. Kaman, Y.-J. Chiu, T. Liljeberg, and J. E. Bowers, “Integrated Tandem
Electroabsorption Modulators for High-Speed OTDM Applications,” Microwave
Photonics Conference (MPW), Conference Digest, 109-112, Oxford, United Kingdom,
September 11-13, (2000).
407.
A. Karim, P. Abraham, D. Lofgreen, Y.-J. Chiu, and J. E. Bowers, “Long Wavelength
Vertical Cavity Laser Arrays for WDM Applications,” 17th IEEE International
Semiconductor Laser Conference, Monterey, CA, September 25-29, (2000).
408.
A. Karim, K. A. Black, P. Abraham, D. Lofgreen, Y.-J. Chiu, J. Piprek, and J.E. Bowers,
“Superlattice Barrier 1528 nm Vertical Cavity Laser with 85° Continuous Wave
Operation,” 17th IEEE International Semiconductor Laser Conference, Conference
Digest, 157-158, Monterey, CA, September 25-29, (2000).
409.
V. Kaman, A. J. Keating, S. Z. Zhang, and J. E. Bowers, “Electroabsorption Modulator as
a Compact OTDM Demultiplexing Receiver,” European Conference on Optical
Communication (ECOC), Munich, Germany, September 2-8, (2000).
410.
J. Piprek, E. S. Björlin, B. Riou, P. Abraham, Y.-J. Chiu, and J. E. Bowers, “Performance
Optimization of 1.3 mm Vertical-Cavity Semiconductor Optical Amplifiers,” European
Conference on Optical Communication (ECOC), Munich, Germany, September 2-8,
(2000).
411.
J. Christofferson, D. Vashaee, A. Shakouri, X. Fan, G. Zeng, C. LaBounty, J.E. Bowers,
and E.T. Croke, “Thermal Characterization of Thin Film Superlattice Micro
Refrigerators,” 27th International Symposium on Compound Semiconductors, Monterey,
CA, October 2-5, (2000).
412.
J. E. Bowers, “Rethinking the Layers: Optical Networking vs. Routing,” Next Generation
Networks conference, Invited Talk, Washington, D.C., October 30-November 3, (2000).
413.
Y.-J. Chiu, V. Kaman, P. Abraham, S. Z. Zhang, and J.E. Bowers, “Low-Bias and HighSaturation-Power Traveling-Wave Electroabsorption Modulator by Using
InGaAsP/InGaAsP MQW,” LEOS, Conference Digest, 326-327, Rio Grande, Puerto
Rico, November 13-17, (2000).
414.
C. LaBounty, D. Oberle, J. Piprek, P. Abraham, A. Shakouri, and J. E. Bowers,
“Monolithic Integration of Solid State Thermionic Coolers with Semiconductor Lasers,”
LEOS, Conference Digest, 498-499, Rio Grande, Puerto Rico, November 13-17, (2000).
415.
D. Lasaosa, Y.-J. Chiu, J. Piprek, and J. E. Bowers, “Traveling-Wave Amplification
Photodetector (TAP detector),” LEOS, Conference Digest, 260-261, Rio Grande, Puerto
Rico, November 13-17, (2000).
416.
E. S. Björlin, B. Riou, P. Abraham, J. Piprek, Y.-J. Chiu, K. A. Black, and J. E. Bowers,
“Vertical-Cavity Semiconductor Optical Amplifiers,” LEOS, Invited Paper, Conference
Digest, 573-574, Rio Grande, Puerto Rico, November 13-17, (2000).
417.
C. LaBounty, G. Robinson, P. Abraham, A. Shakouri, and J.E. Bowers, “TransferredSubstrate InGaAsP-based Thermionic Emission Coolers,” IMECE ‘2000, Orlando, Fla.,
November 5-10, (2000).
418.
S.-P. Tai, Y.-H. Chen, J.-W. Shi, C.-K. Sun, Y.-J. Chiu, and J. E. Bowers, “Saturation
Behaviors of High-Speed LTG-GaAs p-i-n & n-i-n Traveling-Wave Photodetectors at
Telecommunication Wavelength,” International Photonics Conference (IPC 2000),
Hsinchu, Taiwan, December 12-15, (2000).
419.
J.-W. Shi, K.-G. Gan, Y.-J. Chiu, C.-K. Sun, Y.-J. Yang, and J. E. Bowers, “Ultrahigh
(400 GHz) Bandwidth MSM Traveling-Wave Photodetectors,” International Photonics
Conference (IPC 2000), Hsinchu, Taiwan, December 12-15, (2000).
420.
J. E. Bowers, “Optical Switching Technologies that Scale to Meet Experimental Network
Demand,” SUPERnet 2001, Santa Clara, CA, January 14-17, (2001).
421.
K.-G. Gan, J.-W. Shi, Y.-J. Chiu, C.-K. Sun, and J. E. Bowers, “Self-Aligned 0.8ps
FWHM MSM Traveling Wave Photodetector Using Low-Temperature-Grown GaAs,”
Ultrafast Electronics and Optoelectronics, Lake Tahoe, Nevada, January 10-12, (2001).
422.
D. Vashaee, C. LaBounty, X. Fan, G. Zeng, P. Abraham, J. E. Bowers and A. Shakouri,
“P-Type InGaAsP Coolers for Integrated Optic Devices,” SPIE Photonics West, San Jose,
CA, January 20-26, (2001).
423.
D. Lasaosa, Y.-J. Chiu, J. Piprek, J.E. Bowers, “Modeling of Traveling-Wave
Amplification Photodetectors (TAP Detectors),” SPIE Photonics West: Integrated
Optoelectronic Devices, San Jose, CA, January 20-26, (2001).
424.
J. Piprek, E. S. Björlin and J. E. Bowers, “Modeling and Optimization of Vertical-Cavity
Semiconductor Laser Amplifiers,” SPIE Photonics West: Physics and Simulations of
Optoelectronic Devices IX, San Jose, CA, January 20-26, (2001).
425.
J. E. Bowers, “The Photonic Switching Revolution,” Optix 2001 Conference, Keynote
Speaker, Pasadena, CA, Febuary 11-14, (2001).
426.
J. E. Bowers, “Emerging Intelligent Photonic Networks,” All-Optical Networks, Invited
Paper, Dallas, TX, Febuary 6-8, (2001).
427.
X. Fan, G. Zeng, C. LaBounty, J. E. Bowers, D. Vashaee and A. Shakouri, “Recent
Advances in InP-Based Thermionic Coolers,” APS March Meeting 2001, Seattle, WA,
March 12-16, (2001).
428.
X. Fan, G. Zeng, C. LaBounty, J. E. Bowers, E. Croke and A. Shakouri, “The Effect of
Superlattice Parameters on the Performance of SiGe/Si Thin Film Coolers,” APS March
Meeting 2001, Seattle, WA, March 12-16, (2001).
429.
J. Geske, V. Jayaraman, T. Goodwin, M. Culik, M. MacDougal, T. Goodnough, D.
Welch, and J. E. Bowers, “2.5 Gbps Transmission Over 50km with a 1.3mm VerticalCavity Surface-Emitting Laser,” OFC, Anaheim, CA, March 17-22, (2001).
430.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” OFC, Short Course,
Anaheim, CA, March 17-22, (2001).
431.
J. Christofferson, D. Vashaee, A. Shakouri, P. Melese, X. Fan, G. Zeng, C. LaBounty, J.
E. Bowers and E. Croke, “Thermoreflectance Imaging of Superlattice Micro
Refrigerators,” 17th Annual IEEE Symposium on Semiconductor Thermal Measurement
and Management, San Jose, CA, March 20-22, (2001).
432.
M. Raburn, B. Liu, Y. Okuno and J. E. Bowers, “InP/InGaAsP Wafer-Bonded Vertically
Coupled X-Crossing Multiple Channel Optical Add-Drop Multiplexer,” IEEE
International Conference on Indium Phosphide and Related Materials Conference
Proceedings (13th IRPM), 166-169, Nara, Japan, May 14-18, (2001).
433.
J.-W. Shi, Y.-J. Chiu, J. E. Bowers, Y.-H. Chen, S.-P Tai and C.-K. Sun, “Bias
Dependent Nonlinear Responses of LTG-GaAs Based P-I-N/N-I-N Traveling-Wave
Photodetectors under Long Wavelength Excitation,” CLEO/QELS 2001, Baltimore, MD,
May 6-11, (2001).
434.
J. Piprek, E. S. Björlin and J. E. Bowers, “Optical Gain-Bandwidth Product of Vertical
Cavity Amplifiers,” CLEO/QELS 2001, 111, Baltimore, MD, May 6-11, (2001).
435.
J.-W. Shi, K.G. Gan, Y.-J. Chiu, C.-K Sun, Y.-J. Yang and J. E. Bowers, “Ultrahigh
Bandwidth MSM Traveling-Wave Photodetectors,” CLEO/QELS 2001, 348, Baltimore,
MD, May 6-11, (2001).
436.
S. Gee, J.E. Bowers, “Ultraviolet Picosecond Optical Pulse Generation from External
Cavity Modelocked GaN Based Laser/Diodes,” CLEO/QELS 2001, 49-50, Baltimore,
MD, May 6-11, (2001).
437.
J. E. Bowers, “3D MEMS Photonic Crossconnects,” Photonics in Switching Conference,
Invited Talk, Monterey, CA, June 11-13, (2001).
438.
X. Fan, G. Zeng, C. LaBounty, D. Vashaee, J. Christofferson, A. Shakouri and J.E.
Bowers, “Integrated Cooling for Si-based Microelectronics,” 20th International
Conference on Thermoelectrics, Conference Digest, 405-408, Beijing, China, June 8-11,
(2001).
439.
X. Fan, G. Zeng, Y. Okuno, C. LaBounty, A. Shakouri and J. E. Bowers, “Integrated
Cooling of Semiconductor Lasers by Water Fusion,” 20th International Conference on
Thermoelectrics, Beijing, China, June 8-11, (2001).
440.
C. LaBounty, A. Karim, X. Fan, G. Zeng, P. Abraham, Y. Okuno, J. E. Bowers, J.
Christofferson, D. Vashaee, A. Fitting, A. Shakouri, and E. Croke, “Wafer-Fused Thin
Film Cooler Semiconductor Laser Structures,” International Conference on
Thermoelectrics, Conference Digest, 397-400, Beijing, China, June 8-11, (2001).
441.
Y.-J. Chiu, S. Zhang, V. Kaman, J. Piprek and J. E. Bowers, “High-Speed TravelingWave Electroabsoroption Modulators,” 46th SPIE Annual Meeting: Symposium on Radio
Frequency Photonic Devices and Systems II, San Diego, CA, July 29-30, (2001).
442.
E. S. Björlin, J. Piprek, Y.-J Chiu, J. E. Bowers, A. Dahl, P. Abraham and C, Harder,
“1.3µm Vertical-Cavity Amplifying Switch,” 12th OSA Topical Meeting on Optical
Amplifiers and Their Applications, Stresa, Italy, July, (2001).
443.
J. E. Bowers, “Shedding Light on Optical Switches,” OPTICON, Invited Talk, San Jose,
CA, August 13-16, (2001).
444.
J. Geske, V. Jayaraman, Y. Okuno and J. E. Bowers, “Vertical and Lateral
Heterogeneous Integration Using Direct Wafer Bonding,” International Symposium on
Compound Semiconductors, Tokyo, Japan, October 1-4, (2001).
445.
J. E. Bowers, “Advances in Large Optical Cross Connects,” OSA Annual Meeting,
Invited Talk, Long Beach, CA, October 14-18, (2001).
446.
J.-W. Shi, C.-K. Sun and J. E. Bowers, “Taper Line Distributed Photodetector,” IEEE
LEOS Annual Meeting, 382-383, San Diego, CA, November 12-15, (2001).
447.
E. S. Björlin, J. Piprek and J. E. Bowers, “Noise in Vertical-Cavity Semiconductor
Optical Amplifiers,” IEEE/LEOS 14th Annual Meeting, 542-543, San Diego, CA,
November 12-15, (2001).
448.
J. Geske, V. Jayaraman, Y. Okuno and J. E. Bowers, “Vertical and Lateral
Heterogeneous Integration,” IEEE/LEOS 14th Annual Meeting, San Diego, CA,
November 12-15, (2001).
449.
Y.-J. Chiu, V. Kaman, S. Zhang, J. Piprek and J. E. Bowers, “Low-Voltage TravelingWave Electroabsorption Modulators,” LEOS 2001, Invited paper, 182-183, San Diego,
CA, November 12-15, (2001).
450.
S. Huxtable, A. Majumdar, C. LaBounty, G. Zeng, A. Shakouri, A. Abramson, C-L. Tien,
X. Fan, J. E. Bowers and E. Croke, “Thermal Conductivity of Si/SiGe Superlattices,”
Proceedings of IMECE 2001, New York, NY, November 11-16, (2001).
451.
A. Fitting, J. Christofferson, A. Shakouri, X. Fan, G. Zeng, C. LaBounty, J.E. Bowers,
and E. Croke, “Transient Response of Thin Film SiGe Micro Coolers,” Proceedings of
IMECE 2001, 98-103, New York, NY, November 11-16, (2001).
452.
J.-W. Shi, K.-G. Gan, Y.-J. Chiu, J. E. Bowers and C.-K. Sun, “High Power Performance
of Ultrahigh Bandwidth MSM TWPDs,” Technical Digest of IEEE/LEOS 14th Annual
Meeting, 887-888, San Diego, CA, November 12-15, (2001).
453.
G. Zeng, X. Fan, C. LaBounty, J.E. Bowers, E. Croke, J. Christofferson, D. Vashaee, Y.
Zhang, and A. Shakouri, “High Cooling Power Density SiGe/Si Superlattice
Microcoolers,” MRS Fall 2001 Conference, Boston, MA, November 26-30, (2001).
454.
J.-W. Shi, K.-G. Gan, Y.-J. Chiu, Y.-H. Chen, F. Bresson, C.-K. Sun, Y.-J. Yang and J.
E. Bowers, “Ultra-high Bandwidth (570 GHz) Metal-Semiconductor-Metal TravelingWave-Photodetectors,” Conference Proceeding of 2001 Asia Pacific Microwave
Conference, Taipei, Taiwan, R.O.C., December 3-6, (2001).
455.
D. Lasaosa, D. D’Alessandro, G. Giuliani, Y.-J. Chiu, J. Piprek and J. E. Bowers, “Noise
Model for Photodetectors with Distributed Optical Amplification and Absorption,”
International Workshop on Numerical Simulation of Optoelectronic Devices, Conference
Proceedings, 358-361, Santa Barbara, CA, December, (2001).
456.
K.-G. Gan, J.-W. Shi, Y.-J. Chiu, C.-K. Sun, and J.E. Bowers, “Self-aligned MSM LowTemperature-Grown GaAs Traveling Wave Photodetector for 810 nm and 1230 nm,”
MWP ‘01: 2001 International Topical Meeting on Microwave Photonics, Conference
Digest, 153-155, January 7-9, (2002).
457.
J. Piprek, Yi-Jen Chiu, and J. E. Bowers, “Analysis of Multi-Quantum Well
Electroabsorption Modulators,” SPIE Proc. 4646-77, Physics and Simulation of
Optoelectronic Devices X, Photonics West, San Jose, January, (2002).
458.
J. Piprek, J. E. Bowers, and L. A. Coldren, “Photonic Integrated Transmitter and
Receiver Components for RF Links with Gain,” GOMAC, Monterey, CA, March, (2002).
459.
L. Rau, S. Rangarajan, D. J. Blumenthal, H.-F. Chou, Y.-J. Chiu and J. E. Bowers, “TwoHop All-Optical Label Swapping with Variable Length 80Gb/s Packets and 10Gb/s Label
using Nonlinear Fiber Wavelength Converters, Unicast/Multicast Output and a Single
EAM for 80- to 10Gb/s Packet Demultiplexing,” OFC, Postdeadline Paper FD2,
Anaheim, CA, March, (2002).
460.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” Optical Fiber
Communication Conference (OFC ’02), Short Course, Anaheim, CA, March, (2002).
461.
J. E. Bowers, “Optical Switch Fabric-What is Their Value and When Will They Deliver
It?,” Optical Fiber Communication Conference (OFC ’02), Anaheim, CA, March,
(2002).
462.
E. S. Björlin, J. Geske, J. E. Bowers, “10Gb/s Optically Preamplified Receiver Using a
Vertical-Cavity Amplifying Optical Filter,” Technical Digest of 27th Optical Fiber
Communication Conference (OFC ’02), 153-155, Anaheim, CA, March, (2002).
463.
H.-F. Chou, Y.-J. Chiu and J. E. Bowers, “40GHz Optical Pulse Generation using
Traveling-wave Electroabsorption Modulator,” Technical Digest OFC 2002, paper WV2,
338-339, Anaheim, CA, March, (2002).
464.
M. Raburn, K. Rauscher, Y. Okuno, N. Dagli and J. E. Bowers, “Optimization and
Assessment of Shape, Alignment, and Structure of InP/InGaAsP Waveguide Vertically
Coupled Optical Add-Drop Multiplexers,” Indium Phosphide and Related Materials
2002, 131-134, Stockholm, Sweden, May 12-16, (2002).
465.
E. S. Björlin, P. Abraham, D. Pasquariello, J. Piprek, Y.-J. Chiu and J. E. Bowers, “High
Gain, High Efficiency Vertical-Cavity Semiconductor Optical Amplifiers,” 14th IPRM
Conference, Stockholm, Sweden, May, (2002).
466.
J. Piprek, Y.-J. Chiu, S. Zhang, J. E. Bowers, C. Prott, and H. Hillmer, “High-Efficiency
Multi-Quantum-Well Electroabsorption Modulators,” ECS Symposium on Integrated
Optoelectronics, Philadelphia, May, (2002).
467.
J.-W. Shi, Y.-H. Chen, K.-G. Gan, Y.-.J Chiu, J.E. Bowers, and C.-K. Sun, “High Speed
and High Power Performances of LTG-GaAs Based TWPDs in Telecommunication
Wavelength (~1.3 µm),” CLEO 2002, Conference Digest, 10-11, Long Beach, CA, June,
(2002).
468.
J.-W. Shi, K.-G. Gan, Y.-H. Chen, Y.-J. Chiu, J.E. Bowers, and C.-K. Sun, “Nonlinear
Behaviors of LTG-GaAs Based MSM TWPDs Under Telecommunication Wavelength
Excitation,” CLEO 2002, Conference Digest, paper CWA50, 350-351, Long Beach, CA,
June, (2002).
469.
H.-F. Chou, Y.-J. Chiu and J. E. Bowers, “Using Standing-Wave Electroabsorption
Modulators to Generate 40GHz Optical Pulses,” CLEO 2002, Technical Digest, 41-42,
Long Beach, CA, June, (2002).
470.
J. Piprek, Y.-J. Chiu, R. Glew, and J. Bowers, “Wafer-Bonded 1.3-micron Vertical
Cavity Laser,” CLEO 2002, Invited Paper, Long Beach, CA, June, (2002).
471.
J. Piprek, J. Geske, Y.-J. Chiu, V. Jayaraman, A. Karim, and J. Bowers, “Wafer-Bonded
Long-Wavelength Micro-Cavity Devices on GaAs,” Workshop Long-Wavelength on
GaAs, Napa Valley, June, (2002).
472.
D. Blumenthal, J. Bowers, Y.-J. Chiu, H.-F. Chou, B.-E. Olsson, S. Rangarajan, L. Rau
and W. Wang, “Optical Packet Switching and Associated Optical Signal Processing,”
2002 IEEE/LEOS Summer Topical Meeting, Invited Talk, Mont-Tremblant, Canada,
July 15-17, (2002).
473.
V. Kaman, J. E. Bowers, et al., “Optical Performance of a 288x288 Photonic CrossConnect System,” Topical Meeting on Photonics in Switching, Cheju Island, Korea, July
21-25, (2002).
474.
Y. Zhang; G. Zeng; R. Singh, J. Christofferson; E. Croke, J.E Bowers, and A. Shakouri,
“Measurement of Seebeck Coefficient Perpendicular to SiGe Superlattice,” 21st Annual
Conference on Thermoelectronics, Conference Digest, 329-332, Long Beach, CA,
August 25-29, (2002).
475.
R. Lingampalli, J.R. Sechrist, P. Wills, J. Chong, A. Okun, C. Broderick, and J. E.
Bowers, “Reliability of 3D MEMS-Based Photonic Switching Systems in All-Optical
Networks,” NFOEC Conference, Dallas, TX, September 15-19, (2002).
476.
C. Pusarla, and J. E. Bowers, “Optical Switching Technologies,” OSA Annual Meeting,
Invited Talk, Orlando, FL, September 29-October 3, (2002).
477.
H.-F. Chou, Y.-J. Chiu, J. E. Bowers, L. Rau, S. Rangarajan and D. J. Blumenthal,
“Standing-Wave Enhanced Electroabsorption Modulator for 80 to 10Gb/s OTDM
Demultiplexing,” ECOC 2002, Copenhagen, Denmark, September 8-12, (2002).
478.
J. Geske, Y. L. Okuno, J. E. Bowers, and D. Leonard, “Dual-Wavelength Vertical-Cavity
Surface-Emitting Laser Arrays Fabricated by Nonplanar Wafer Bonding,” 18th IEEE
International Semiconductor Laser Conference, Garmisch, Germany, September, (2002).
479.
Y. L. Okuno, J. Geske, Y.-J. Chiu, S. P. DenBaars, and J. E. Bowers, “Polarization
Control of 1.3 µm-Wavelength Vertical Cavity Surface Emitting Laser (VCSEL)
Fabricated By Orientation-Mismatched Wafer Bonding,” 18th IEEE International
Semiconductor Laser Conference, Garmisch-Partenkirchen, Germany, September,
(2002).
480.
E. S. Bjorlin and J. Bowers, “Long Wavelength Vertical Cavity Semiconductor Optical
Amplifiers,” SPIE Proceedings 4871, Semiconductor Lasers and Optical Amplifiers for
Lightwave Communications Systems, ITCom 02, Invited Paper, Boston, MA, September,
(2002).
481.
Y. L. Okuno, J. Geske, Y.-J. Chiu, S. P. DenBaars, and J. E. Bowers, “OrientationMismatched Wafer Bonding for Polarization Control of 1.3 um-Wavelength Vertical
Cavity Surface Emitting Lasers (VCSELs),” 29th International Symposium on Compound
Semiconductors, Lausanne, Switzerland, October 7-10, (2002).
482.
J.-W. Shi, Y.-H. Chen, T.-M. Liu, M.-C. Chan, K.-G. Gan, Y.-J. Chiu, J.E Bowers, and
C.-K. Sun, “Metal-Semiconductors-Metal Traveling Wave Photodetectors,” LEOS 2002,
The 15th Annual Meeting of the IEEE, Conference Digest, 2, 445-446, November 13-14,
(2002).
483.
K.-G. Gan, C.-K. Sun, J. E. Bowers and S. P. DenBaars, “Ultrafast Inter-subband Hole
Relaxation in an InGaN Multiple-Quantum-Well Laser Diode,” Ultrafast Electronics and
Optoelectronics Conference 2003, Washington, DC, January 15-17, (2003).
484.
K.-G. Gan, C.-K. Sun, J. E. Bowers and S. P. DenBaars, “Ultrafast Carrier Dynamics in
InGaN MQW Laser Diode,” Optoelectronics 2003 Symposium, San Jose, CA, January
25-31, (2003).
485.
J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, “Physics of Waveguide
Photodetectors with Integrated Amplification,” Physics and Simulation of Optoelectronic
Devices XI, SPIE, 4986-28, San Jose, CA, January 25-31, (2003).
486.
J. Piprek, A. Bregy, Y-J. Chiu, V. Jayaraman, and J.E. Bowers, “Lateral-Cavity Design
for Long-Wavelength Vertical-Cavity Lasers,” Proc., NanoTech, San Francisco, CA,
February, (2003).
487.
H.-F. Chou, Y.-J. Chiu, J. E. Bowers, W. Wang and D. J. Blumenthal, “160Gb/s to
10Gb/s OTDM Demultiplexing Using a Traveling-wave Electroabsorption Modulator,”
Optical Fiber Communication Conference and Exposition (OFC) 2003, Atlanta, GA,
March 23-28, (2003).
488.
W. Wang, H. N. Poulsen, L. Rau, D. J. Blumenthal, H.-F. Chou, J. E. Bowers, and G.
Lars, “80-Gb/s Regenerative Wavelength Conversion using a Hybrid Raman/EDFA
Gain-Enhanced XPM Converter with Highly-Nonlinear-Fiber,” The Optical Fiber
Communication Conference and Exposition (OFC) 2003, Atlanta, GA, March 23-28,
(2003).
489.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” The Optical Fiber
Communication Conference and Exposition (OFC) 2003, Short Course, Atlanta, GA,
March 23-28, (2003).
490.
J. E. Bowers, “Market Watch: Business and Technology Series, Tunability in the
Network,” The Optical Fiber Communication Conference and Exposition (OFC) 2003,
Atlanta, GA, March 23-28, (2003).
491.
J. E. Bowers, V. Kaman, R. J. Helkey, C. Pusarla, and X. Zheng, “The Use of Large
Optical Switches for True Time Delay Beam Forming in a Phased Array Radar,”
GOMAC 2003, Conference Proceedings, 155-158, Tampa, FL, March, (2003).
492.
J. E. Bowers, Panel: “Emerging Optical Architectures: Enhancing or Replacing
SONET/SDH,” Next Generation Ventures 2003, San Francisco, CA, April 15, (2003).
493.
J. Piprek, D. Pasquariello, D. Lasaosa, and J. E. Bowers, “Novel Waveguide
Photodetectors on InP with Integrated Light Amplification,” Proceedings of The 203rd
Electrochemical Society Meeting, Invited Talk, Paris, France, April 27-May 2, (2003).
494.
J. Piprek, D. Pasquariello, D. Lasaosa, and J.E. Bowers, “1.55 μm Traveling-Wave
Amplification Photodetector,” IEEE Int. Conf. on InP and Related Materials IPRM,
Santa Barbara, May, (2003).
495.
M. Mehta, V. Jayaraman, A. Jackson, S. Wu, Y. Okuno, J. Piprek, and J.E. Bowers,
“134°C Continuous-Wave Operation of a 1.33-µm Wafer-Bonded VCSEL,”
CLEO/QELS 2003, Baltimore, MD, June 1-6, (2003).
496.
B. Liu, J. Shim, Y.-J. Chiu, H.-F Chou, K.-G. Gan, J. Piprek, and J. E. Bowers,
“Dynamic Range of Traveling-Wave Multiple-Quantum-Well Electroabsorption
Modulators,” CLEO/QELS 2003, Baltimore, MD, June 1-6, (2003).
497.
T. Kimura, E. S. Björlin, J. Piprek, and J.E. Bowers, “Temperature Tuning of 1.3 μm
Vertical-Cavity Semiconductor Optical Amplifiers,” CLEO/QELS 2003, Baltimore, MD,
June 1-6, (2003).
498.
J. Piprek, D. Lasaosa, D. Pasquariello, and J.E. Bowers, “Traveling-Wave Photodetector
with Integrated Light Amplification,” CLEO/QELS 2003, Baltimore, MD, June 1-6,
(2003).
499.
J. Geske, D. Leonard, M. MacDougal, Y. Okuno, J. Piprek, and J. E. Bowers, “LongWavelength WDM Vertical-Cavity Surface-Emitting Laser Arrays Spanning 140nm,”
Proceedings of European Conference on Optical Communication, Rimini, Italy,
September 22-24, (2003).
500.
H.-F. Chou, Z. Hu, J. E. Bowers, D. J. Blumenthal, K. Nishimura, R. Inohara, and M.
Usami, “Simultaneous Demultiplexing, Electrical Clock Recovery, and Optical Clock
Generation Using Photocurrent and Subharmonic Frequency in a Traveling-Wave
Electroabsorption Modulator,” Proceedings of European Conference on Optical
Communication, Rimini, Italy, September 22-24, (2003).
501.
D. Pasquarillo, J. Piprek, D. Lasaosa, and J. E. Bowers, “InP-based Waveguide
Photodetector with Integrated Photon Multiplication,” Proceedings of 3rd Annual SPIE
ITCOM 2003, Orlando, FL, September 7-11, (2003).
502.
B. Liu, Y. Okuno, J. Piprek, and J. E. Bowers, “Integrated Cavity Surface Emitting
Lasers,” Proceedings of 3rd Annual SPIE ITCOM 2003, Orlando, FL, September 7-11,
(2003).
503.
J. Shim, B. Liu, Y.-J. Chiu, J. Piprek, and J. E. Bowers, “Nonlinear Behavior of
Traveling-Wave Electroabsorption Modulators,” Proceedings of 3rd Annual SPIE ITCOM
2003, Orlando, FL, September 7-11, (2003).
504.
D. Lasaosa, D. Pasquariello, J. Piprek, and J. E. Bowers, “Recent Advances in
Photodetectors with Distributed Optical Amplification,” Proceedings of 3rd Annual SPIE
ITCOM 2003, 5248, Orlando, FL, September 7-11, (2003).
505.
M. Mehta, V. Jayaraman, A. Jackson, S. Wu, Y. Okuno, J. Piprek, and J. E. Bowers,
“Wafer-Bonded VCSELs with Tunnel Junctions,” Proceedings of 3rd Annual SPIE
ITCOM 2003, Orlando, FL, September 7-11, (2003).
506.
J. Piprek, V. Jayaraman, M. Mehta, and J. E. Bowers, “Balanced Optimization of 1.31
μm Tunnel-Junction VCSELs,” Proceedings of NUSOD, Tokyo, Japan, October 14-16,
(2003).
507.
G. Zeng, X. Fan, C. LaBounty, E. Croke, Y. Zhang, J. Christofferson, D. Vashaee, A.
Shakouri, J. Bowers, "Cooling Power Density of SiGe/Si Superlattice Micro
Refrigerators," Proceedings of Materials Research Society Fall Meeting 2003, 793, paper
S2.2, Boston, MA, December, (2003).
508.
R. Singh, D. Vashaee, Y. Zhang, M. Negassi, A. Shakouri, Y. Okuno, G. Zeng, C.
LaBounty, and J. Bowers, "Experimental Characterization and Modeling of InP-Based
Microcoolers," Proceedings of Materials Research Society Fall Meeting 2003, 793, paper
S11.4, Boston, MA, December, (2003).
509.
Y. Zhang, D. Vashaee, R. Singh, A. Shakouri, G. Zeng, and Yi-Jin Chiu, and J. E.
Bowers, "Influence of Doping Concentration and Ambient Temperature on the CrossPlane Seebeck Coefficient of InGaAs/InAIAs Superlattices," Proceedings of Materials
Research Society Fall Meeting 2003, 793, paper S2.4, Boston, MA, December, (2003).
510.
G. Zeng, A. Shakouri, E. Croke, Y. Zhang, J. Christofferson, and J. E.Bowers, "SiGeC
Cantilever Micro Cooler," Proceedings of Materials Research Society Fall Meeting 2003,
793, paper S11.3, Boston, MA, December, (2003).
511.
K.-G. Gan and J. E. Bowers, “Femtosecond Carrier Dynamics in InGaN Multiplequantum-well Laser Diodes Under High Injection Levels,” 17th Annual Meeting of the
IEEE Lasers and Electro-Optics Society, 2, 7-11, January, (2004).
512.
J. Bowers, “All Optical Networks” Proceedings of International Technology Conference,
Invited talk, Hong Kong, February 10-11, (2004).
513.
J. Bowers, “ ‘The Next Revolution’, Back to the Future of Optical Communications:
Fiber Optics Opportunities Outside the Telco Bubble,” OSA Telecommunications
Executive Forum, Invited Talk, Los Angeles, CA, February 24, (2004).
514.
J. Bowers, “Building and Positioning a New Technology Company for the Telecom
Turnaround,” OFC MarketWatch Symposium, Invited paper, Los Angeles, February,
(2004).
515.
Z. Hu, B. Liu, X. Yan, J. E. Bowers, D. J. Blumenthal, “All-optical 40Gb/s CrossWavelength Transferred Clock Recovery for 3R Wavelength Conversion Using a
Traveling-wave Electroabsorption Modulator-based Resonant Cavity,” Proceedings of
29th Optical Fiber Communications Conference (OFC’04), paper WD3, Los Angeles,
CA, February, (2004).
516.
H.-F. Chou, J. E. Bowers, D. J. Blumenthal, “Compact 160 Gb/S Add-Drop Multiplexing
with a 40 Gb/S Base-Rate,” Proceedings of 29th Optical Fiber Communications
Conference (OFC’04), postdeadline paper PDP28, Los Angeles, CA, February, (2004).
517.
J. Geske, D. Leonard, M. MacDougal, J. E. Bowers, “CWDM Vertical-Cavity Surface
Emitting Laser Array Spanning 140 Nm Of The C, S, And L, Fiber Transmission Bands,”
Proceedings of 29th Optical Fiber Communications Conference (OFC’04), paper TuE7,
Los Angeles, CA, February, (2004).
518.
H.-F. Chou, J. E. Bowers, D. J. Blumenthal, “Novel photocurrent-assisted wavelength
(PAW) converter using a traveling-wave electroabsorption modulator with signal
monitoring and regeneration capabillities,” Proceedings of 29th Optical Fiber
Communications Conference (OFC’04), paper FD4, Los Angeles, CA, February, (2004).
519.
Hu, H.-F Chou, D. Blumenthal, and J. E. Bowers, “A Compact All-Optical 40Gb/S Clock
Recovery Using A Traveling-Wave Electroabsorption Modulator-Based Ring Oscillator
With A Chip Coplanar Q-Filter,” Proceedings of CLEO/IQEC Conference, San
Francisco, CA, May 18-23, (2004).
520.
G. D. Cole, Q. Chen, E. S. Björlin, T. Kimura, S. Wu, C. S. Wang, J. E. Bowers, N. C.
MacDoanld, “Microelectromechanical Tunable Long-wavelength Vertical-cavity
Semiconductor Optical Amplifiers,” Proceedings of 16th Int. Conf. InP and Related
Materials, Paper FA2-4, May 31 - June 4, (2004).
521.
J. Geske, J. E. Bowers, and A. Riley, “Simplified Nonplanar Wafer Bonding for
Heterogeneous Device Integration,” Proceedings of the 16th International Conference
InP and Related Materials, Paper FA2-4.31, May/June, (2004).
522.
G. Cole, and J. Bowers, “Vertical Cavity SOAs,” Proceedings of OAA Conference,
Invited Paper, San Francisco, CA, June 27- 30, (2004).
523.
J. E. Bowers, M. Mehta, S. Wu, S. Bjorlin, “High Power 1.3 μm Wafer Fused VCSELs,”
Proceedings of OECC/COIN 2004 Conference, Invited paper, Yokohama, Japan, July
12-16, (2004).
524.
G. Cole, Q. Chen, S. Björlin, T. Kimura, S. Wu, C. Wang, J. E. Bowers, and N.
Macdonald, “Wavelength Selection in MEMS Tunable Vertical-cavity SOAs,”
Proceedings of 15th Optical Amplifiers and Their Applications OSA Topical Meeting and
Exhibit, San Francisco, CA, July, (2004).
525.
K.-G. Gan and J. E. Bowers, “Femtosecond Carrier Dynamics in InGaN Multiplequantum-well Laser Diodes Under High Injection Levels,” 12th International Symposium
on Ultrafast Phenomena, Vilnius, Lithuania, August 22-25, (2004).
526.
J. E. Bowers, “Optical Switching Trends,” Proceedings of Workshop on Optical Network
Testbeds, Invited Paper, Palo Alto, August 9-11, (2004).
527.
H. Park, E. F. Burmeister, E.S. Björlin, and J.E. Bowers, “40-Gb/s Optical Buffer Design
and Simulation,” Proceedings of the 4th International Conference on Numerical
Simulation of Optoelectronic Devices (NUSOD’04), Santa Barbara, CA, August, (2004).
528.
M. Mehta, E. S. Bjorlin, and J. E. Bowers, “Calculated Voltage Characteristics for
Tunnel Junctions in Double intra-cavity Long-Wavelength Surface Emitting Lasers,”
Proceedings of the 4th International Conference on Numerical Simulation of
Optoelectronic Devices (NUSOD’04), Santa Barbara, CA, August, (2004).
529.
J. E. Bowers, “Trends in Optical Networks,” Proceedings of International Photonics
Technology Conference (IPCT), Plenary Talk, Seoul, Korea, September 15-17, (2004).
530.
J. E. Bowers, and H.-F. Chou, “Applications of Traveling-Wave Electroabsorption
Modulators in 160 Gbit/s Systems,” Proceedings of European Conference on Optical
Communications (ECOC), Invited Talk, Stockholm, Sweden, September 5-9, (2004).
531.
Z. Hu, K. Nishimura, H. Chou, L. Rau, M. Usami, J. E. Bowers, and K. J. Blumenthal,
“40-Gb/s Optical Packet Clock Recovery Using a Travelling-Wave Electroabsorption
Modulator-Based Ring Oscillator,” Proceedings of European Conference on Optical
Communications (ECOC404), paper We3.5.4, Stockholm, Sweden, September 5-10,
(2004).
532.
J. E. Bowers, “Optical Network Trends,” Proceedings of Terabits 2004, Invited Talk,
Washington, DC, Sept. 8-9, (2004).
533.
J. E. Bowers, and H. Chou, "Applications of Traveling-Wave Electroabsorption
Modualtors in 160-Gbit/s Systems," European Conference on Optical Communication
(ECOC404), Symposium Tu4.1.1, Stockholm, Sweden, September, (2004).
534.
J. Shynk and J. E. Bowers, “Adaptive Signal Processing,” Asilomar Conference, Invited
Talk, Blackburn, VA, November 7-10, (2004).
535.
J. E. Bowers, “All Optical Networks,” Proceedings of Asia Pacific Optical
Communications, Plenary Talk, Beijing, November 7-11, (2004).
536.
J. Shynk, J. E. Bowers, and S. Hwang, “A Sparse Reconfigurable Adaptive Filter Based
on a Photonic Switch,” Proceedings of the 38th Asilomar Conference on Signals, Systems,
and Computers, 235-240, Pacific Grove, CA, November 7-10, (2004).
537.
Z. Hu, H. F. Chou, J. E. Bowers, and D. J. Blumenthal, "40-Gb/s Optical 3R
Regeneration Using a Traveling-wave Electroabsorption Modulator-Based Optical Clock
Recovery," Proceedings of Optical Fiber Communication Conference (OFC’05), paper
OTuO5, March, (2005).
538.
H. Chou and J. E. Bowers, “Simplified Optoelectronic 3R Regenerator Using Nonlinear
E/O Transformation in an Electroabsorption Modulator,” Proceedings of Optical Fiber
Communication Conference (OFC’05), paper OTuO5, March, (2005).
539.
G. Zeng, J. E. Bowers, Y. Zhang, A. Shakouri, J. M. Zide, A. C. Gossard, W. Kim, A.
Majumdar, "ErAs/InGaAs Superlattice Seebeck Coefficient," Proceedings of
International Conference on Thermoelectrics, Clemson University, South Carolina, June,
(2005).
540.
G. Zeng, J. E. Bowers, Y. Zhang, A. Shakouri, "SiGe/Si Superlattice Power Generators,"
Proceedings of International Conference on Thermoelectrics, Clemson University, South
Carolina, June, (2005).
541.
G. Cole, J. E. Bowers, K. L. Turner, and N. C. MacDonald, “Dynamic Characterization
of MEMS-Tunable Vertical-Cavity SOAs,” 2005 IEEE/LEOS International Conference
on Optical MEMS and their Applications, Oulu, Finland, August, (2005).
542.
S. Kodama, H. Park, A. W. Fang and J. E. Bowers, "Novel Laser Diode Structure
consisting of a Si Waveguide and Compound-Semiconductor MQW layers for Si
Platform Integration," Proceedings of International Conference on Solid State Devices
and Materials, Kobe, Japan, September 13-15, (2005).
543.
J. M. Zide, G. Zeng, J. E. Bowers, W. Kim, A. Majumdar, D. Vashaee, A. Shakouri, and
A.C. Gossard, “MBE Growth of III-V Semiconductors Containing Epitaxial
Semimetallic Nanoparticles for Thermoelectric Power Generation,” Proceedings of
NAMBE, September 11-14, (2005).
544.
H. Park, A. Fang, S. Kodama, J. E. Bowers, "An Optically Pumped Silicon Evanescent
Laser," The 31st European Conference on Optical Communications (ECOC 2005),
SECC, Glasgow, Scotland, September, (2005).
545.
S.-S. Hwang, J. J. Shynk, J. E. Bowers, “Algorithms for a Sparse Reconfigurable
Adaptive Filter (SRAF) and a Photonic Switch,” Electrical and Computer Engineering
Research Review, Santa Barbara, CA, October 27-28, (2005).
546.
J. E. Bowers, “MEMS Optical Switching for Optical Burst Networks,” Broadnets
Conference, Invited Paper, Boston, MS, October 7, (2005).
547.
J. M. Zide, G. Zeng, J.H. Bahk, J.E. Bowers, W. Kim, A. Majumdar, A. Shakouri, A.C.
Gossard, “III-V Semiconductors Containing Epitaxially Embedded Semimetallic
Nanoparticles for Efficient Thermoelectric Materials,” MRS Fall Meeting, (2005).
548.
Z. Hu, H.-F. Chou, J. E. Bowers, and D. J. Blumenthal, “40-Gb/s Optical 3R
Regeneration Using a Traveling-wave Electroabsorption Modulator-Based Optical Clock
Recovery,” Optical Society of America, (2005).
549.
S. Hwang, J. Shynk and J. E. Bowers, "A System-Based Adaptive Algorithm for a
Reconfigurable Photonic Switch," Proceedings of the 39th Conference on Information
Sciences and Systems, (2005).
550.
J. E. Bowers, “Optical Networking Technology,” Symposium On Optical Communication
Technology, Plenary Talk, Taiwan, Febuary 22-24, (2006).
551.
A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers,
“Heterogeneous Integration of Silicon and AlGaInAs for a Silicon Evanescent Laser,”
Photonics West, Invited Paper, Feburary 7, (2006).
552.
H. Park, A. W. Fang, and J. E. Bowers, R. Jones, M. J. Paniccia, and O. Cohen, “An
Optically Pumped Silicon Evanescent Laser Operating Continuous Wave at 60 ºC,”
Optical Fiber Communication Conference (OFC’06), paper OWH2, Los Angeles, CA,
March, (2006).
553.
M. Mehta, V. Robbins, S. Lester, D. Mars, D. Bour, F. Mertz, and J. Miller, and J.E.
Bowers, “High Power, High Speed, Single-Mode Wafer-Bonded AlInGaAs-based LWVCSELs at 70 °C,” Optical Fiber Communication Conference (OFC’06), paper OFA7,
Los Angeles, CA, March, (2006).
554.
B. R. Koch, Z. Hu, J. E. Bowers, and D. J. Blumenthal, “Integrated Optical Label Read
and Payload Envelope Detection Circuit for Optical Label Swapping,” Optical Fiber
Communication Conference (OFC’06), paper OWL7, Los Angeles, CA, March, (2006).
555.
Z. Hu, B. R. Koch, J. E. Bowers, and D. J. Blumenthal, “Integrated Photonic/RF 40-Gb/s
Curst Mode Optical Clock Recoverey for Assynchronous Optical Packet Switching,”
Optical Fiber Communication Conference (OFC’06), paper OThS7, Los Angeles, CA,
March, (2006).
556.
J. Bowers, “Making Fiber Access More Profitable,” OSA Telecommunications Executive
Forum, Optical Fiber Communication Conference (OFC’06), Invited Talk, Los
Angeles, CA, March, (2006).
557.
J. E. Bowers, “Modulator Design and Application to 160 Gbit/s Systems,” ICBHT
Conference, Invited Paper, Taiwan, April 3-4, (2006).
558.
J. E. Bowers, H. Park, A. W. Fang, R. Jones, O. Cohen, and M. J. Paniccia, “A
Technology for Integrating Active Photonic Devices on SOI Wafers,” IPRM, Invited
Paper, May 7-11, (2006).
559.
J. E. Bowers, “Hybrid Silicon Evanescent Laser,” Device Research Conference 2006
(DRC 2006), Invited Paper, University Park, PA, June 20, (2006).
560.
M. N. Sysak, L. A. Johansson, J. W. Raring, L. A. Coldren, and J. E. Bowers, “A High
efficiency, Current Injection Based Quantum-Well Phase Modulator Monolithically
Integrated with a Tunable Laser for Coherent Systems,” Coherent Optical Technologies
and Applications (COTA'06), paper CFC6, Whistler, British Columbia, Canada, June,
(2006).
561.
H.-F. Chou, A. Ramaswamy, D. Zibar, L. A. Johansson, J. E. Bowers, M. Rodwell, and
L. Coldren, “SFDR Improvement of a Coherent Receiver Using Feedback,” Coherent
Optical Technologies and Applications (COTA'06), paper CFC6, Whistler, British
Columbia, Canada, June, (2006).
562.
D. Zibar, L. A. Johansson, H.-F. Chou, A. Ramaswamy and J. E. Bowers, “Time-Domain
Analysis of a Novel Phase-Locked Optical Demodulator,” Coherent Optical
Technologies and Applications (COTA'06), Paper JWB11, Whistler, British Columbia,
Canada, June, (2006).
563.
E. Burmeister, D. J. Blumenthal, and J. E. Bowers, “Optical Buffering for NextGeneration Routers,” Opto-Electronics and Communications Conference, Invited Paper,
Kaohsiung, Taiwan, June, (2006).
564.
J. E. Bowers, H. Park and A. Fang, “Design of Hybrid Silicon Evanescent Amplifiers,”
COIN-NGN, Invited Paper, Korea, July, (2006).
565.
J. M. O. Zide, G. Zeng, J. H. Bahk, W. Kim, S. Singer, D. Vashaee, Z. X. Bian, R. Singh,
J. E. Bowers, A. Majumdar, A. Shakouri, and A. C. Gossard, “Nanocomposites of
Semimetallic ErAs Nanoparticles Epitaxially Embedded Within InGaAlAs-based
Semiconductors for Thermoelectric Materials,” ICT 2006, Vienna, Austria, August 6-10,
(2006).
566.
J. E. Bowers, “Silicon Evanescent Lasers and Amplifiers,” 2006 IEEE/LEOS Group IV
Photonics Conference, Invited Paper, paper TuA1, Ottawa, Canada, September 13-15,
(2006).
567.
H. Park, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “40 C
+Continuous-Wave Electrically Pumped Hybrid Silicon Evanescent Laser,” IEEE 20th
International Semiconductor Laser Conference, paper PD1.3, Kohala, Hawaii, September
17-21, (2006).
568.
V. Kaman, S. Yuan, O. Jerphagnon, R. J. Helkey, and J. E. Bowers, “Comparison of
Wavelength-Selective Cross-Connect Architectures for Reconfigurable All-Optical
Networks,” Photonics in Switching Conference (PS’2006), Invited Paper, Crete, Greece,
October 18, (2006).
569.
J. E. Bowers, E. Burmeister, D. Blumenthal, “Optical Buffering and Switching for
Optical Packet Switching,” Photonics in Switching Conference (PS’2006), Invited
Paper, Crete, Greece, October 18, (2006).
570.
J. E. Bowers, H. Park, A. Fang, R. Jones, O. Cohen, M. J. Paniccia, “Scalable Wafer
Bonding for Active Photonic Devices on Silicon,” LEOS Annual Meeting, Invited Paper,
paper TuC1, October 29-November 2, (2006).
571.
J. E. Bowers, H. Poulsen and D. Blumenthal, “Future Internet Architecture: Issues and
Non-issues,” Broadnets, Invited Paper, San Fransico, October 4, (2006).
572.
J. M. O. Zide, G. Zeng, J.H. Bahk, W. Kim, S. L. Singer, D. Vashaee, Z. X. Bian, R.
Singh, J. E. Bowers, A. Majumdar, A. Shakouri, A.C. Gossard, “MBE Growth of
Semimetallic ErAs Nanoparticles Epitaxially Embedded Within InGa(Al)As-Based
Structures for Efficient Thermoelectric Power Generation,” NAMBE, October 8, (2006).
573.
M. N. Sysak, L. A. Johannson, J. Klamkin, L. A. Coldren, J. E. Bowers,
“Characterization of Third Order Distortion in InGaAsP Optical Phase Modulators
Monolithically Integrated with Balanced UTC Photodetector,” Lasers and Electro-Optics
Society 19th Annual Meeting, paper TuU2, October, (2006).
574.
H.-F. Chou, L. Johansson, D. Zibar, A. Ramaswamy, M. Rodwell, J. E. Bowers, “AllOptical Coherent Receiver with Feedback and Sampling,” MWP 2006, Grenoble, France,
October, (2006).
575.
D. Zibar, L. A. Johansson, H.-F. Chou, A. Ramaswamy, M. Rodwell, J. Bowers,
“Investigation of a Novel Optical Phase Demodulator Based on a Sampling PhaseLocked Loop,” MWP 2006, Grenoble, France, October, (2006).
576.
J. E. Bowers, “Silicon Evanescent Photonic Integrated Circuits,” IEDMS, Plenary Talk,
Tainen, Taiwan, December 7, (2006).
577.
L. A. Johansson, H. Chou, A. Ramaswamy, J. Klamkin, L. A. Coldren, M.J. Rodwell, J.
E. Bowers, "Coherent Optical Receiver for Linear Optical Phase Demodulation," TMS
07, Orlando, FL, Febuary 25-March 1, (2007).
578.
B. Koch, J. S. Barton, M. Masanovic, Z. Hu, J. E. Bowers, and D. J. Blumenthal, “35
Gb/s Monolithic All-Optical Clock Recovery Pulse Source,” OFC, paper OWP2,
Anaheim, CA, March 27-29, (2007).
579.
J. Mack, et al., “A 40 Gb/s Asynchronous Optical Packet Buffer Based on an SOA Gate
Matrix for Contention Resolution,” OFC, paper OTuB7, Anaheim, CA, March 27-29,
(2007).
580.
H. Park, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, J. E. Bowers, “An Electrically
Pumped Hybrid Silicon Evanescent Amplifier,” OFC, paper OTuD2, Anaheim, CA,
March 27-29, (2007).
581.
J. Bowers, A. W. Fang, H. Park, “Hybrid Silicon Evanescent Laser in a Silicon-onInsulator Waveguide,” OFC, Invited Paper, paper OTuK4, Anaheim, CA, March 27-29,
(2007).
582.
Z. Bian, R. Singh, M. Zebarjadi, A. Shakouri, W. Kim, S. Singer, and A. Majumdar, J.-H.
Bahk, G. Zeng, and J. E. Bowers, J. M. O. Zide, and A. C. Gossard, “Wiedemann-Franz
law and electronic thermal conductivity in tall barrier superlattices,” MRS 2007, San
Fransisco, CA, April 10-13, (2007).
583.
Y. Kuo, A. Fang, H. Park, H. Wen, R. Jones, O. Cohen, M. Paniccia, “High speed silicon
photonic transceivers,” IEEE/LEOS Workshop on Interconnections within High Speed
Digital Systems, Invited Paper, Santa Fe, NM, May 20-23, (2007).
584.
Y.-H. Kuo, H. Park, A. W. Fang, J. E. Bowers, R. Jones, M. Paniccia, O. Cohen, "High
Speed Data Amplification Using Hybrid Silicon Evanescent Amplifier," CLEO 2007,
paper CTuII1, Baltimore, MD, May 8-10, (2007).
585.
J.E. Bowers, A.W. Fang, H. Park, R. Jones, O. Cohen, and M. J. Paniccia, “Hybrid
Silicon Evanescent Photonic Integrated Circuits Technology,” CLEO 2007, Invited
Paper, paper CTuQ1, Baltimore, MD, May 8-10, (2007).
586.
H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, J. E.
Bowers, “A Hybrid Silicon Evanescent Photodetector,” Device Research Conference
(DRC 2007), paper V.A-2, Notre Dame, IN, June 18-21, (2007).
587.
J. E. Bowers, “Low Power High Capacity Optical Switching,” Conference on Optical
Interconnects (COIN), Invited Paper, Australia, June 24-27, (2007).
588.
R. Singh, Z. Bian, G. Zeng, J. Zide, W. Kim, Je-Hyeong Bahk, Suzanne Singer, A.
Shakouri, J. E. Bowers, A.Gossard, A. Majumdar, “High-Temperature ZT of InGaAlAs
Thin Films with Embedded ErAsNanoparticles,” EMC 2007, paper J7, Notre Dame, IN,
June 20-22, (2007).
589.
D. Liang, H. Park, A. W. Fang, and J. E. Bowers, “Low temperature Wafer Bonding for
III-V Si Photonic Integrated Circuits,” EMC 2007, paper L3, Notre Dame, IN, June 2022, (2007).
590.
Z. Bian, R. Singh, Y. Ezzahri, M. Zebarjadi, A. Shakouri, G. Zeng, J. H. Bahk, J. E.
Bowers, J. M. O. Zide, A. C. Gossard, P. M. Mayer and R. J. Ram, “Micro devices for
thermoelectric figure-of-merit measurements of thin films,” EMC 2007, paper J6, Notre
Dame, IN, June 20-22, (2007).
591.
J. Zide, G. Zeng, J. H. Bahk, W. Kim, Z. Singer, D. Vashaee, Z. Bian, R. Singh, J. E.
Bowers, A. Majumdar, A. Shakouri, A. Gossard, “Semimetallic Nanoparticles Epitaxially
Embedded withink III-V Semiconductors for Efficient Thermoelectric Power
Generation,” EMC 2007, paper J5, Notre Dame, IN, June 20-22, (2007).
592.
G. Zeng, J.-H. Bahk, J. E. Bowers, J. Zide, A. Gossard, Z. Bian, R. Singh, M. Zebarjadi,
A. Shakouri, W. Kim, S. Singer, A. Majumdar, “Thin-Film Power Generator Modules of
(InGaAs)1-x(InAlAs)xEmbedded with ErAs Nanoparticles,” EMC 2007, paper J8, Notre
Dame, IN, June 20-22, (2007).
593.
L. A. Johansson, H.-F. Chou, A. Ramaswamy, J. Klamkin, L. A. Coldren, M. J. Rodwell,
and J. E. Bowers, “Coherent Optical Receiver for Linear Optical Phase Demodulation,”
International Microwave Symposium, Invited Paper, paper TU3D-01, Honolulu, HI,
June 3-8, (2007).
594.
J.-H. Bahk, G. Zeng, J. M. O. Zide, Z. X. Bian, R. Singh, A. Shakouri, A.C. Gossard, and
J. E. Bowers, “High Temperature Electrical Measurements of Thin Film InGaAlAs
Alloys with Embedded ErAs Nanoparticles,” Int. Conf on Thermoelectrics, Seoul, Korea,
June12-15, (2007).
595.
R. Jones, H. D. Park, A. W. Fang, J. E. Bowers, O. Cohen, O. Raday, and M. J. Paniccia,
“Hybrid Silicon Technology,” The International Conference on Optical, Optoelectronic
and Photonic Materials and Applications, London, UK, July 30-August 3, (2007).
596.
J. E. Bowers, H. Park, Y.-H. Kuo, A. W. Fang, R. Jones, M. J. Paniccia, O. Cohen, O.
Raday, “Integrated Optical Amplifiers on Silicon Waveguides,” IPNRA, Invited Paper,
paper ITuG1, Salt Lake City, July 8-12, (2007).
597.
J. E. Bowers, “Hybrid Silicon Laser by Wafer Bonding,” IPRA, Invited Paper,
Göteborg, Sweden, July 8-13, (2007).
598.
A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers,
“Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector,” 12th
OptoElectronics and Communications Conference, SPIE Photonics East, Invited Paper,
6775(67750P-1), Yokohama Kanagawa, Japan, July 9-13, (2007).
599.
J. E. Bowers, “Long Wavelength Sources on Silicon Substrates,” OECC/IOOC 2007,
Invited paper, Tokyo, Japan, July 9-13, (2007).
600.
V. Kaman, R. J. Helkey, and J. E. Bowers, “Multi-Degree ROADM’s with Agile AddDrop Access,” Photonics in Switching (PS’2007), Invited Paper, San Fransisco, CA,
August 19-20, (2007).
601.
J. E. Bowers, H. Park, Y.-H. Kuo, A. Fang, R. Jones, O. Cohen, O. Raday, and M.
Paniccia, “Silicon Evanescent Aplifiers,” Technology and Devices for Optical Buffers
and Switches CLEO Pacific Rim, Invited Paper, paper FA1-2, Seoul, Korea, August 2631, (2007).
602.
B. R. Koch, J. S. Barton, M. Mašanović, Z. Hu, H. N. Poulsen, J. E. Bowers, and D. J.
Blumenthal, “Fast Optical Clock Recovery and Signal Regeneration Applications of a
Monolithic Mode Locked Laser with DBR Mirrors and an Optical Amplifier,” ECOC
2007, paper 7.3.2, Berlin, Germany, September 16-20, (2007).
603.
J. E. Bowers, H. Park, A. W. Fang, Y.-H. Kuo, R. Jones, O. Cohen, O. Raday, M. J.
Paniccia, “Hybrid III-V and IV Lasers and Amplifiers,” ECOC 2007, Invited Paper,
paper 9.2.1, Berlin, Germany, September 16-20, (2007).
604.
J. E. Bowers, “Silicon Photonics,” Frontiers in Optics, Invited Paper, San Jose, CA,
September 16-20, (2007).
605.
J. E. Bowers, "Prospects of VLSI Photonics,” 34th International Symposium on
Compound Semiconductors (ISCS 2007), Plenary Speaker, Kyoto, Japan, October 1518, (2007).
606.
J. E. Bowers, “Silicon Photonics and Lasers,” Asia Optoelectronics Exhibition and
Conference (AOE 2007), Plenary Talk, Shanghai, China, October 17-19, (2007).
607.
M. N. Sysak, H. Park, A. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M.
Paniccia, “Experimental and Theoretical Analysis of Thermal Impedance in a Hybrid
Silicon Evanescent Laser,” LEOS 2007, Lake Buena Vista, FL, October 21-25, (2007).
608.
A. W. Fang, R. Jones, H. Park, O. Cohen, M. J. Paniccia, J. E. Bowers, “Hybrid
AlGaInAs-Silicon Evanescent Racetrack Laser,” LEOS 2007, Invited Paper ThR 1,
Lake Buena Vista, FL, October 21-25, (2007).
609.
A. Ramaswamy, L. A. Johansson, J. Klamkin, M. J. Rodwell, J. E. Bowers, and L. A.
Coldren, “Integrated All-Photonic Coherent Receiver,” LEOS 2007, Lake Buena Vista,
FL, October 21-25, (2007).
610.
J. Klamkin, L A. Johansson, A. Ramaswamy, J. E. Bowers, S. P. DenBaars, and L. A.
Coldren, “Monolithically Integrated Coherent Receiver for Highly Linear Microweave
Photonic Links,” LEOS 2007, Lake Buena Vista, FL, October 21-25, (2007).
611.
J. E. Bowers, “Large Scale Microoptic Switching,” MOC'07, Plenary Talk, Takamatsu,
Kagawa, Japan, October 28-31, (2007).
612.
J. Klamkin, L. Coldren, S. Denbaars, J. Bowers, M. Dummer, L. Johansson, Y.-C. Chang,
and A. Ramaswamy, “Uni-Traveling-Carrier Photodiodes with Increased Output
Response and Low Intermodulation Distortion,” IEEE Microwave Photonics Conference,
Victoria, BC Canada, October 3-5, (2007).
613.
L. Johansson, D. Zibar, A. Ramaswamy, L. Coldren, M. Rodwell, and J. E. Bowers,
“Analysis of Sampled Optical Phase-Lock Loops,” MWP Conference, Victoria, BC
Canada, October 3-5, (2007).
614.
J. E. Bowers, A. Ramaswamy, L. A.Johansson, J. Klmakin, M. Sysak, D. Zibar, L.
Coldren, and M. Rodwell, “Linear Coherent Receiver Based on a Broadband and
Sampling Optical Phase-Locked Loop,” MWP Conference, Invited Talk, Victoria, BC
Canada, October 3-5, (2007).
615.
J. E. Bowers and V. Kaman, “Optical Switching for High Capacity Grid Computing,”
International Symposium on High-capacity Optical Networks & Enabling Technologies,
Keynote Address, Dubai, UAE, November 10-12, (2007).
616.
G. Zeng, J.-H. Bahk, J. E. Bowers, J. M. O. Zide, A. C. Gossard, A. Shakouri, J. W.
Sharp, “Segment Power Generation Modules of Bi2Te3 and InGaAlAs Embedded with
ErAs Nanoparticles,” MRS Fall Meeting, November 26-30, (2007).
617.
J. E. Bowers, “Silicon Photonics: Issues and Solutions,” International Symposium on
VCSEL and Integrated Photonics, Invited Paper, Tokyo, Dec. 17-18, (2007).
618.
D. Liang, E. A. Lucero, J.E. Bowers, “Highly Efficient Vertical Outgassing Channels for
Robust, Void-Free, Low-Temperature Direct Wafer Bonding,” PCSI 2008, Paper
We1150, Santa Fe, NM, Janurary 13-17, (2008).
619.
H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers,
“Hybrid Silicon Evanescent Photodetectors,” SPIE Photonics West, Paper 6898-38, San
Jose, CA, January 21-25, (2008).
620.
A. W. Fang, H. Park, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers, “Integrated
AlGaInAs-silicon evanescent racetrack laser and photodetector,” SPIE Photonics West,
Paper 6898-18, San Jose, CA, January 21-25, (2008).
621.
A.W. Fang, E. Lively, Y-H. Huo, D. Liang, J.E. Bowers, "Distributed Feedback Silicon
Evanescent Laser," OFC 2008, Paper PDP15, San Diego, CA, February 24-28, (2008).
622.
Y. Kuo, H. Chen, J. E. Bowers, “A Hybrid Silicon Evanescent Electroabsorption
Modulator,” OFC 2008, Accepted Paper, San Diego, CA, February 24-28, (2008).
623.
B. R. Koch, A. W. Fang, H. Poulsen, H. Park, D. J. Blumenthal, J. E. Bowers, “AllOptical Clock Recovery with Retiming and Reshaping Using a Silicon Evanescent Mode
Locked Ring Laser,” OFC 2008, Paper OMN1, San Diego, CA, February 24-28, (2008).
624.
D. Zibar, I. T. Monroy, C. Peucheret, L. A. Johansson, J. E. Bowers, P. Jeppesen, “DSP
based Coherent Receiver for Phase-Modulated radio-over-Fiber Optical Links,” OFC
2008, paper OThH3, San Diego, CA, February 24-28, (2008).
625.
S. Yuan, N. Madamopoulos, R. Helkey, V. Kaman, J. Klingshirn, J. E. Bowers, “Fully
Intergrated NxN MEMS Wavelength Selective Switch with 100% Colorless Add-Drop
Ports,” OFC 2008, Accepted Paper, San Diego, CA, February 24-28, (2008).
626.
R. Jones, M. N. Sysak, H. Park, A. W. Fang, H. Chang, Y. Kuo, J. E. Bowers, O. Raday,
O. Cohen, “Intergrated Hybrid Lasers and Amplifiers on a Silicon Platform,” OFC 2008,
Paper OWM1, San Diego, CA, February 24-28, (2008).
627.
E. F. Burmeister, J. P. Mack, H. N. Poulsen, J. K. Klamkin, L. A. Coldren, D. J.
Blumenthal, J. E. Bowers, “SOA Gate Array Recirculating Bufer for Optical Packet
Switching,” OFC 2008, Paper Owe4, San Diego, CA, February 24-28, (2008).
628.
Y. Kang, M. Morse, M.J. Paniccia, S. Litski, M. Zadka, G. Sarid, Y-H. Kuo, J.E.
Bowers, A. Beling, J. Campbell, A. Pauchard, “10Gbps Ge/Si Avalanche Photodiodes
with 153GHz Gain Bandwidth Product,” ISTDM2008, Accepted Paper, Hsinchu,
Taiwan, May 11-14, (2008).
629.
D. Liang, A.W. Fang, D. Chapman, P.W. Juodawlkis, O. Raday, O. Cohen, J.E. Bowers,
“Wafer-Scale Fabrication of λ=1.55 µm Hybrid Silicon Evanescent Devices on 150 mm
Silicon-On-Insulator Wafers,” 35th ECTC 2008, Oral Presentation, Lake Buena Vista, FL,
May 27-30, (2008).
630.
D. Liang, A.W. Fang, J. E. Bowers, “Low Temperature, Large Wafer-Scale InP-to-Si
Direct Bonding with Vertical Outgassing Channels for Silicon Photonic Integrated
Circuits,” TMS Electronic Materials Conference 2008, paper II2, Santa Barbara, CA,
June 25-27, (2008).
631.
A. Ramaseamy, L.A. Johansson, J. Klamkin, D. Zibar, J.E. Bowers, L.A. Coldren,
"Optical Phase Demodulation of 10Ghz RF Signal using Optical Sampling," COTA 2008,
paper CtuC3, Boston, MA, July 13-16, (2008).
632.
M.L. Masanovic, E.F. Burmeister, A. Tauke-Pedretti, B.R. Koch, M.M. Dummer, J.A.
Summers, J.S. Barton, L.A. Coldren, J.E. Bowers, D.J. Blumenthal, “Photonic Intergrated
Circuits for Optical Routing and Sweitching Applications,” IPNR, Invited, paper IWC5,
Boston, MA, July 13-16, (2008).
633.
J.S. Barton, M.L. Masanovic, M.M. Dummer, A. Tauke-Pedretti, E.F. Burmeister, B.R.
Koch, J.A. Summers, L.A. Coldren, J.E. Bowers, D.J. Blumenthal, "Recent Progress on
LASOR Optical Router and Related Integrated Technologies," PS2008, Invited, paper D01-4, Sapporo, Japan, August 4-7, (2008).
634.
H.-W. Chen. Y.-H. Kuo, J.E. Bowers, "A 10Gb/s Mach-Zehnder Silicon Evanescent
Modulator," IEEE GFP 2008, WA3, Sorrento Italy, September 17-19, (2008).
635.
A.W. Fang, B.R. Koch, R. Jones, E. Lively, D. Liang, J. E. Bowers, "A Distributed bragg
Reflector Silicon Evanescent Laser," IEEE GFP 2008, WD2, Sorrento Italy, September
17-19, (2008).
636.
M. N. Sysak, J. O. Anthes, D. Liang, J. E. Bowers, O. Raday, R. Jones, "A Hybrid
Silicon Sampled Grating DBR Tunable Laser," IEEE GFP 2008, WD1 Invited, Sorrento
Italy, September 17-19, (2008).
637.
B.R. Koch, A.W. Fang, R. Jones, O. Cohen, M. Paniccia, D.J. Blumenthal, J.E. Bowers,
"Silicon Evanescent Optical Frequency Comb Generator," IEEE GFP 2008, WD4,
Sorrento Italy, September 17-19, (2008).
638.
M. Sysak, J. Anthes, O. Raday, J.E. Bowers, R. Jones, "A Hybrid Silicon Sampled
Grating DBR Laser integrated with an Electroabsorption Modulatorusing Quantum Well
Intermixing," ECOC 2008, paper number Tu.4.C.4, Brussels, Germany, September 2124, (2008).
639.
E.F. Burmeister, J.P. Mack, H.N. Poulsen. B. Stameric, M. Masanovic, D.J. Blumenthal,
J.E. Bowers, "Demonstration of contention resolution between two 40 Gb/s packet
streams using multiple photonic chip optical buffers," ECOC 2008, paper T.C. 2.5.,
Brussels, Germeny, September 21-24, (2008).
640.
J.P. Mack, E.F. Burmeister, H.N. Poulsen, B. Stamenic, J.E. Bowers, D.J. Blumenthal,
"Photonic Integrated Circuit Switch Matrix and Waveguide Delay Lines for Optical
Packet Synchronization," ECOC 2008, paper number Th.2.C.5., Brussels, Germany,
September 21-24, (2008).
641.
D. Liang, A.W. Fang, H-W. Chen, J.E. Bowers, “Wafer Bonded Silicon Photonics,”
IEEE/LEOS, Invited Talk, paper number Wa1, San Diego, CA, September 30-October 2,
(2008).
642.
D. Liang, A.W. Fang, J.E. Bowers, D.C. Oakley, A. Napoleone, D.C. Chapman, C-L.
Chen, P.W. Juodawlkis, “150 mm InP-to-Silicon Direct Wafer Bonding for Silicon
Photonic Integrated Circuits,” PRiME 2008, Paper 2220, Best Paper Award, Honolulu,
HI, October 12-17, (2008).
643.
C.-H. Chen, A. Ramaswamy, J. Klamkin, L.A. Johansson, J.E. Bowers, L.A. Coldren,
"Optical Phase Demodulation using a Coherent Receiver with an Ultra-Compact Grating
Beam Splitter," Asian Optical Fiber Communication and Optoelectronics Conference,
paper SAN3, Outstanding Student Presentation Award, Shanghai, China, October 20November 2, (2008).
644.
D. Liang, A.W. Fang, J. E. Bowers, “100 mm Integration of III-V and Silicon-onInsulator Wafers for the Realization of Distributed Feedback Silicon Evanescent Lasers,”
SPIE: Asian Pacific Optical Communicaiton, Paper number 7135-163, Hangzhou, China,
October 26-30, (2008).
645.
Y. Kang, M. Morse, M.J. Paniccia, M. Zadka, S. Litski, G. Sarid, Y.-H. Kuo, J.E.
Bowers, A. Beling, H.-D. Liu, D.C. Mcintosh, J. Campbell, and A. Pauchard,
"Monolithic Ge/Si Avalanche Photodiode Receiver for 10Gb/s 1.3mm Application,"
IEEE LEOS 21st Annual Meeting, Invited Talk, Newport Beach, CA, November 09-13,
(2008).
646.
A. Ramaswamy, J. Klamkin, L.A. Johansson, L.A. Coldren, J.E. Bowers, "Three-Tone
Characterization of High-Linearity Waveguide Uni-Traveling-Carrier Photodiodes,"
IEEE LEOS 21st Annual Meeting, paper number TuR3, Newport Beach, CA, November
09-13, (2008).
647.
G. Zeng, J.-H. Bahk, A. Ramu, J. E. Bowers, H. Lu, A. C. Gossard, Z. Bian, M.
Zebarjadi, A. Shakouri, "6 Watt Segmented Power Generator Modules using Bi2Te3 and
(InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles," Material
Research Society Symposium, Vol. 1129, 1129-V08-04, Boston, MA, December 1-5,
(2008).
648.
M. L. Mašanovic', E. P. Burmeister, M. M. Dummer, B. Koch, S. C. Nicholesb, B.
Jevremovic', K. Nguyen , V. Lal , J. E. Bowers, L. A. Coldren, and D. J.Blumenthal,
"Advanced photonic integrated technologies for optical routing and switching ," Invited
Talk, Optoelectronic Integrated Circuits XI, Proc. of SPIE, 7219(721901), doi:
10.1117/12.811611, February 10, (2009).
649.
G. Zeng, H. Lu, J.H. Bahk, A. Ramu, A. Gossard, J. E. Bowers, “ErAs Nanoparticles
Embedded in (InGaAs)1-x(InAlAs)x for Thermoelectric Power Conversion” TMS 138th
Annual Meeting & Exhibition, San Francisco, CA, February 15-19, (2009).
650.
J-H. Bahk, M. Zebarjadi, Z. Bain, G. Zeng, A. Ramu, H. Lu, A. Shakouri, A. Gossard,
and J.E. Bowers, "Characterization and modelling of randomly distributed ErAs
nanoparticles in InGaAIAs for thermoelectric power generaion," APS March Meeting
2009, Session T28. # 4, Pittsburg, PA, March 18, (2009).
651.
M. Piels, A. Ramaswamy, W. Sfar Zaoui, J.E. Bowers, Y. Kang, M. Morse, "Microwave
Nonlinearities in Ge/Si Avalanche Photodiodes having a Gain-Bandwidth Product of 300
GHz," OFC2009, paper number OMR1, San Diego, CA, March 23-27, (2009).
652.
W. S. Zaoui, H.-W. Chen, J.E. Bowers, Y. Kang, M. Morse, M.J. Paniccia, A. Pauchard,
J.C. Campbell, "Origin of the Gain-Bandwidth-Product Enhancement in SeparateAbsorption-Charge Multiplication Ge/Si Avalanche Photodiodes," OFC2009, paper
number OMR6, San Diego, CA, March 23-27, (2009).
653.
J.-H. Bahk , M. Zebarjadi , Z. Bian , G. Zeng , A. Ramu , H. Lu , A. Shakouri , A.
Gossard , J. Bowers, “Characterization and modeling of the randomly distributed ErAs
nanoparticles in InGaAlAs semiconductors for thermoelectric power generation,”
American Physical Society, T28.4, March, (2009).
654.
M. Zebarjadi, K. Esfarjani, A. Shakouri, Z. Bian, J.-H. Bahk, G. Zeng, J. Bowers, H. Lu,
J. M. O. Zide, A. Gossard, “Thermoelectric Power of high concentration embedded
nanoparticle samples,” American Physical Society, T28.2, March, (2009).
655.
T. Favaloro , R. Singh , J. Christofferson , Y. Ezzahri , Z. Bian , A. Shakouri , G. Zeng ,
J.-H. Bahk , J. Bowers , H. Lu , A. Gossard, “Transient Electrical and Thermal
Characterization of InGaAlAs Thin Films with embedded ErAs Nanoparticles,”
American Physical Society, T28.3, March, (2009).
656.
J.E. Bowers, "Hybrid Silicon Photonic Integrated Circuits," IEEE LEOS (IHSDS) '09,
Plenary Talk- PLE1, Santa Fe, NM, May 03-06, (2009).
657.
J. P. Mack, K. Nguyen, M. M. Dummer, E. F. Burmeister, H. N. Poulsen, B. Stamenic,
G. Kurczveil, J. E. Bowers, L. A. Coldren, D. J. Blumenthal, “40 Gb/s Buffered 2x2
Optical Packet Switching,” CLEO, Baltimore, MD, May 31-June 5, (2009).
658.
C.-H., Chen, A. Ramaswamy, L. A. Johansson, N. Nunoya, J. Klamkin, J.E. Bowers,
L.A. Coldren, "Linear Phase Demodulation using an Intergrated Coherent Receiver with
an Ultra-Compact Grating Beam Splitter," DRC, Penn State University, University Park,
PA, June 22-24, (2009).
659.
H.-W. Chen, Y.-H. Kuo, John E. Bowers, “ High Speed Silicon Modulators,” 14th OECC,
Invited Talk ThG1, Hong Kong, China, July 13-17, (2009).
660.
D. Dai, A. W. Fang, J.E. Bowers, "High speed modulation of hybrid silicon evanescent
lasers," IPRNA 2009, Invited Talk, Honolulu, HI, July 12-17, (2009).
661.
Y. Li, R. Wang, P. Herczfeld, J. Klamkin, L. Johansson, J. E. Bowers, "RF Frequency
Down-conversion with Quadratic Electro-optic Effect," IMS2009, paper number 1685,
Kunming & Banna, China, July 20-28, (2009).
662.
J.E. Bowers, “Low Power 3D MEMs Optical Seitches,” Optical MEMS & Nanophotonics
2009, Invited Talk, Clearwater Beach, FL, August 16-20, (2009).
663.
J.E. Bowers, A. Ramaswamy, D. Dai , W. S. Zaoui, Y. Kang, T. Yin, M. Morse, “CMOScompatible Ge/Si Photodetectors,” ISCS, Invited Paper, Santa Barbara, CA, August 30September 2, (2009).
664.
D. Dai, H.-W. Chen, J. E. Bowers, Y. Kang, M. Morse, M. J. Paniccia, “Equivalent
circuit model of a waveguide-type Ge/Si avalanche photodetector operating at 1550nm,”
ISCS, Santa Barbara, CA, August 30-September 2, (2009).
665.
G. A. Fish, A. Fang, J. E. Bowers, "Review of the State-of-the-Art in Silicon Photonics
and its Potential for Aerospace Applications", AVFOP 2009, Invited Paper, San
Antonio, TX, September 22-24, (2009).
666.
S. T. Todd, X. (Trent) Haung, J.E. Bowers, N. C. MacDonald, "High Aspect Ratio CPW
Fabricated Using a DRIE/Thermal Oxidation/Electroplating/Planarization
Micromachining Process," European Microwave Conference, Paper number 22044, Italy,
September 28-October 3, (2009).
667.
D. Liang, D. Spencer, M. Fiorentino, A. W. Fang, D. Dai, Y.H. Kuo, R. G. Beausoleil, J.
E. Bowers, "An Electrically-Pumped Hybrid Silicon Microring Laser For Optical
Interconnects," Group IV Photonics, PostDeadline, San Francisco, CA, September 9-11,
(2009).
668.
Y. Kang, M. Morse, M. J. Paniccia, M. Zadka, Y. Saad, G. Sarid, A. Pauchard, W. S.
Zaoui, H. -W. Chen, D. Dai, J. E. Bowers, H. -D. Liu, D. C. Mcintosh, X. Zheng, J. C.
Campbell, "Monolithic Ge/Si Avalanche Photodiodes," Group IV Photonics, Invited
Paper, WB6, San Francisco, CA, September 9-11, (2009).
669.
A. Ramaswamy, N. Nunoya, L. A. Johansson, J. E. Bowers, “A High Power Ge n-i-p
waveguide photodetector on Silicon-on-Insulator Substrate,” Group IV Photonics, WB4,
San Francisco, CA, September 9-11, (2009).
670.
H.-W. Chen, Y.-H. Kuo, J. E. Bowers, “A High Speed Mach-Zehnder Silicon Evanescent
Modulator Using Capacitively Loaded Traveling Wave Electrode,” Group IV Photonics,
FC4, San Francisco, CA, September 9-11, (2009).
671.
D. Liang, M. Fiorentino, A. W. Fang, D. Dai, Y.H. Kuo, R. G. Beausoleil, J. E. Bowers,
“An Optically-Pumped Silicon Evanescent Microring Resonator Laser,” Group IV
Photonics, FA5, San Francisco, CA, September 9-11, (2009).
672.
D. Dai, H.-W. Chen, J. E. Bowers, Y.Kang, M. Morse, M. J. Paniccia, “Equivalent circuit
model of a Ge/Si avalanche photodiode,” Group IV Photonics, WB2, San Francisco, CA,
September 9-11, (2009).
673.
S. T. Todd, J.E. Bowers, “High Aspect Ratio CPW Fabricated Using a Micromachining
Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization” CSICS
2009, Paper number 31, Greensboro, NC, October 11-14, (2009).
674.
H.W. Chen, A. W. Fang, J. Bovington, J. D. Peters, J. E. Bowers, "Hybrid Silicon
Tunable Filter Based on a Mach Zehnder Interferometer and Ring Resonator," MWP
2009, We.2.3, Best Paper Award, Valencia, Spain, October 14-16, (2009).
675.
A. Ramaswamy, N. Nunoya, M. Piels,L. A. Johansson, L.A. Coldren, J.E. Bowers,
“Experimental Analysis of Two Measurement Techniques to Characterize Photodiode
Linearity,” MWP 2009, Fr.2.4, Best Paper Runner Up, Valencia, Spain, October 14-16,
(2009).
676.
J. Klamkin, A. Ramaswamy, L. A. Johnsson, N. Nunoya, J.E. Bowers, S. P. DenBaars, L.
A. Coldren, “Uni-Traveling-Carrier Photodiodes with Tunable MMI Coupler for
Optimization of Sourc Laser RIN Suppression” MWP 2009, We.2.2, Valencia, Spain,
October 14-16, (2009).
677.
D. Dai, D. Liang, J. E. Bowers, “Enhancement of the evanescent coupling between
deeply-etched IIIV-Si hybrid microring laser and its small Si bus waveguide by using a
bending coupler” Asia Communications and Photonics Conference and Exhibition
(ACP), Shanghai, China, November 2-6, (2009).
678.
J. E. Bowers, “Research at the Center on Materials for Energy Efficiency Applications
(CMEEA),” AVS Symposia, Invited Talk, San Jose, CA, November 8-13, (2009).
679.
S. T. Todd, X. T. Huang, J. E. Bowers, N. C. MacDonald, "High Aspect Ratio CPW
Fabricated Using Silicon Bulk Micromachining with Substrate Removal," Asia-Pacific
Microwave Conference 2009, Singapore, December 7-10, (2009).
680.
N. Nunoya, A. Ramaswamy, H.-W. Chen, H. Park, and J.E. Bowers, "Dynamic
Distortion Characteristics of Silicon Evanescent Detectors and Phase Modulators," OFC
2009, San Diego, CA, (2009).
681.
J. Klamkin, L.A. Johansson, A. Ramaswamy, N. Nunoya, S. Ristic, U. Kishnamachari, J.
Chen, J.E. Bowers, S. P. DenBaars, and L.A. Coldren, "Highly Linear Integrated
Coherent Receivers for Microwave Photonic Links," OFC 2009, San Diego, CA, (2009).
682.
D. Liang, M. Fiorentino, R. G. Beausoleil, J. E. Bowers, "Compact Low-Threshold
Hybrid Silicon Microring Resonator Lasers," IEEE/LEOS Winter Topical Meetings,
Invited Talk, Majorca, Spain, January 11-13, (2010).
683.
J. E. Bowers, D. Dai, Y. Kang, M. Morse, "Resonant Si/Ge avalanche photodiode with an
ultrahigh gain bandwidth product," IEEE/LEOS Winter Topical Meetings, Invited Paper,
Majorca, Spain, January 11-13, (2010).
684.
J. M. Garcia, J. P. Mack, K. N. Nguyen, K. Hollar, E. F. Burmeister, B. Stamenic, G.
Kurczveil, H. N. Poulsen, J. E. Bowers, D. J. Blumenthal, "A Real-Time Asynchronous
Dynamically Re-Sizable Optical Buffer for Variable Length 40Gbps Optical Packets,"
OFC 2010, San Diego, CA, March 21-25, (2010).
685.
H.-H. Chang, Y.-H. Kuo, H.-W. Chen, R. Jones, A. Barkai, M. J. Paniccia, J. E. Bowers,
"Integrated Triplexer on Hybrid Silicon Platform," OFC 2010, Submitted, San Diego,
CA, March 21-25, (2010).
686.
J. E. Bowers, D. Dai, Y. Kang, M. Morse, "High Gain High Sensitivity Resonant Ge/Si
APD Photodetectors," SPIE, Orlando, FL, April 5-9, (2010).
687.
Y. Kang, H.D. Liua, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A.
Pauchard, Y.H. Kuo, H.W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. Mcintosh,
X. Zheng, J. C. Campbell, “Epitaxially-Grown Germanium/Silicon Avalanche
Photodiodes for Near Infrared Light Detection,” SPIE, 739906, Orlando, FL, April 13-17,
(2009).
EXTERNAL PRESENTATIONS SINCE OCTOBER, 1987
1.
“Mode Locking of Semiconductor Lasers,” Tektronix Research Laboratory, October,
1987.
2.
“Semi-insulating Planar Buried Heterostructure Lasers,” Rockwell Science Center,
Thousand Oaks, CA, November, 1987.
3.
“Millimeter Wave Transmission Using Semiconductor Lasers,” Hughes Research
Laboratories, Malibu, CA, December, 1987.
4.
“High Speed Semiconductor Lasers,” Rome Air Development Center, Boston, Mass.,
January, 1988.
5.
“Mode Locking of Semiconductor Lasers for Electro-optic Sampling,” Hewlett Packard
Research Laboratories, Palo Alto, CA, February, 1988.
6.
“Optoelectronics at UCSB,” Eta Kappa Nu Guest Speaker, UCSB, April, 1988.
7.
“Needs for High Speed Optoelectronic Instrumentation,” Keynote Speaker, OPTO Day,
Tektronix, Beaverton, Oregon, May, 1988.
8.
“Outlook for Fiber Optic Technology,” Second Rockwell Fiber Optics Workshop, June
1-2, 1989.
9.
“Active Mode Locking of Semiconductor Lasers,” Nippon Telephone and Telegraph,
Atsugi, JAPAN, July 10, 1989.
10.
“High Speed Optoelectronics at UCSB,” University of Tokyo Institute of Industrial
Science, Roppongi, JAPAN, July 11, 1989.
11.
“Active Mode Locking of Semiconductor Lasers,” Yokohama Electric Company,
Yokohama, JAPAN, July 12, 1989.
12.
“Active Mode Locking of Semiconductor Lasers,” Hammamatsu Photonic Corporation,
Hammamatsu, JAPAN, July 14, 1989.
13.
“State of the Art Components” Panel Member, Workshop on Integrated Optoelectronics,
Hilton Head, March, 1989.
14.
“High Speed Semiconductor Lasers,” Motorola, Phoenix, Arizona, March 15, 1990.
15.
“High Speed Optoelectronics,” Naval Research Laboratory, Washington, D.C., March 23,
1990.
16.
“High Speed Optoelectronics,” Colorado State University, April 26, 1990.
17.
“Long Wavelength InGaAsP VCSELs,” Hewlett Packard Research Laboratories, Palo
Alto, CA, August 7, 1992.
18.
“Ultrafast Optoelectronics,” Tokyo LEOS Chapter, University of Tokyo, Tokyo, Japan,
October 1, 1992.
19.
“Ultrafast Optoelectronics,” LEOS Ottawa Chapter, National Research Council, Ottawa,
Canada, November 19, 1992.
20.
“Ultrafast Optoelectronics,” Los Angeles LEOS Chapter, UCLA, Los Angeles, CA,
February 3, 1993.
21.
“Ultrafast Optoelectronics,” Santa Barbara IEEE Chapter, UCSB, Santa Barbara, CA,
February 18, 1993.
22.
“Ultrafast Optoelectronics,” Austin LEOS Chapter, Austin, Texas, March 17, 1993.
23.
“Ultrafast Optoelectronics,” Albuquerque LEOS Chapter, Albuquerque, New Mexico,
March 18, 1993.
24.
“Ultrafast Optoelectronics,” Santa Maria IEEE Chapter, Lompoc, CA, April 1, 1993.
25.
“Ultrafast Optoelectronics,” Paris IEEE Chapter, Paris, France, April 21, 1993.
26.
“Ultrafast Optoelectronics,” Boston LEOS Chapter, Boston, MA, May 6, 1993.
27.
“High Speed Optoelectronic Switching Systems,” Hewlett-Packard, Santa Rosa, CA,
May 24, 1993.
28.
“Long Wavelength Vertical Cavity Lasers,” Stanford University, Palo Alto, CA,
December 7, 1993.
29.
“Fusing for Advanced Optoelectronics,” ARPA DSRC Meeting, La Jolla, CA, 1994
30.
“High Speed Fiber Optic Transmission Systems,” ARPA DSRC Meeting, La Jolla, CA,
1995.
31.
“Silicon Hetero-Interface Photodetector,” Santa Barbara Research Center, November 17,
1995.
32.
“Fusing Technology for Novel Optoelectronic Devices, “Hewlett Packard, Palo Alto, CA,
December 14, 1995.
33.
“The Fiber Optics Revolution,” Science Lite Program, University Club, Santa Barbara,
CA, March 15, 1999.
34.
“Rethinking the layers: Optical networking versus Routing,” Next Generation Networks
Conference, Washington DC, Nov. 1, 2000.
35.
“High Technology Venture Funded Startups”, MIT Enterprise Forum Santa Barbara, CA,
November 15, 2000.
36.
“MEMS for Large Optical Switches,” Dynamic Silicon Conference, San Francisco, CA,
January 22, 2001.
37.
“Photonic Switching: A Scalable Solution to the Switching Bottleneck,” Keynote
Address, Optix 2001, Pasadena, CA, February 11-14, 2001.
38.
“3D MEMS Optical Switching and its Impact on the Evolution of Transparent Networks”
NRO Speaker Series, October 3, 2003.
39.
“All Optical Networks”, J. Bowers, China Telecom, Guangzhou, China, February, 2004.
40.
“Traveling-Wave Electroabsorption Modulators and Applications in High Speed OTDM
Systems and All Optical Networks”, J. Bowers, Chinese University of Hong Kong,
February, 2004.
41.
“Optoelectronic Innovations in MEMS, VCSELs and EAMs”, J. E. Bowers, Hong Kong
University of Science and Technology, Hong Kong, February 11, 2004.
42.
“Traveling-Wave Electroabsorption Modulators and Applications in High Speed OTDM
Systems and All Optical Networks”, Korea University, Seoul, Korea, Sept. 13, 2004.
43.
“Traveling-Wave Electroabsorption Modulators”, VCSOAs and Optical Switching,
Samsung Seoul, Korea, Sept. 14, 2004.
44.
“Trends in Optical Networks”, KAPIX Gwangju, Korea, Sept. 16, 2004.
45.
“High Speed Optoelectronics, Intel, San Jose, February, 2005.
46.
“Optical Reconfigurable Networks, Cisco, San Jose, May, 2005.
47.
“Optoelectronic Innovations in MEMS, Lasers and EAMs,” Univ. Texas, Austin, Nov.
11, 2005.
48.
“ErAs Thermoelectric Coolers,” Lincoln Labs, Feb. 3, 2006.
49.
“High Speed, Highly Linear Optoelectronic Links and Devices,” Raytheon, July 18,
2006.
50.
Optical Switching Challenges 3-D MEMS-based Dynamically Reconfigurable Optical
Packet Switch (DROPS) Cisco, September 2006.
51.
Silicon Evanescent Lasers, Science and Engineering Council, Santa Barbara, CA , Oct.
12, 2006.
52.
“Entrepreneurship and Innovation for the Lab Bench to the Work Bench,” Technology
Management Program, Santa Barbara, CA, Oct 19, 2006
53.
Silicon Evanescent Lasers, Google, Mountain View, CA, Oct. 23, 2006.
54.
Silicon Evanescent Lasers and Imagers, Raytheon, Oct. 31, 2006.
55.
Silicon Evanescent Photonic Integrated Circuits, National Taiwan University, December
6, 2006.
56.
VLSI Photonics, KDDI Research Laboratories, January 26, 2007.
57.
"Silicon Photonics for Optical Buffers and Transmitters," OFC Workshop, Anneheim,
March 25, 2007.
58.
“Silicon Photonics,” Caltech Feb. 23, 2007.
59.
“Silicon VLSI,” AGED STAR meeting, Monterey, CA July 25, 2007.
60.
“Linear Coherent Optical Receivers Using Optical Phase-Locked Loops,” IEEE
Buenaventura MTT-S Chapter meeting, Camarillo, CA April 16, 2008.
61.
Photonic Integration on Silicon”, OIDA Workshop on Integration, San Jose, Oct. 6, 2009.
62.
“Thermoelectrics” Science and Engineering Council, Santa Barbara, CA Oct. 8, 2009.
63.
“Silicon Photonics”, California Polytechnic University, San Louis Obispo, Oct. 9, 2009.
64.
“Cool Solutions for a Hot Planet”, United Nations Day, SBCC, Santa Barbara, CA, Nov.
7, 2009.
65.
“Erbium Arsenide Thermoelectrics, SSLEC Review, UCSB, Nov. 5, 2009.
66.
“Thermoelectrics for Waste Heat Recovery”, Science Lite Series, UCSB Affiliates, Nov.
12, 2009.
67.
SHORT COURSES SINCE 2003.
1.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE,
The Optical Fiber Communication Conference and Exposition (OFC), Atlanta, GA,
March 23-28 (2004).
2.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE,
ECOC Conference Stockholm, Sweden, September 5-9 (2004).
3.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE,
The Optical Fiber Communication Conference and Exposition (OFC), Anneheim (2005).
4.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE
SC177, The Optical Fiber Communication Conference and Exposition (OFC’06),
Anneheim (2006).
5.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE
SC177, The Optical Fiber Communication Conference and Exposition (OFC’07),
Anneheim (2007).
6.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE
SC177, The Optical Fiber Communication Conference and Exposition (OFC’08), San
Diego (2008).
7.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE
SC177, The Optical Fiber Communication Conference and Exposition (OFC’09), San
Diego (2009).
8.
J. E. Bowers, “High-Speed Semiconductor Lasers and Modulators,” SHORT COURSE
SC177, The Optical Fiber Communication Conference and Exposition (OFC’10), San
Diego (2010).