Direct Synthesis of Photosensitive Poly(benzoxazole) Kazuya Ebara, Yuji Shibasaki, and Mitsuru Ueda* Department of Organic and Polymeric Materials Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan Poly(o-hydroxy-amide) (3) as a poly(benzoxazole) precursor was prepared by the polycondensation of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (1) and N,N`-isophtaloylbis(benzoxazoline-2-thione) (2) in N-methylpyrrolidinone. The resist from the polymerization solution without isolation of 3 was formulated with diazonaphtoquinone. A clear positive pattern with 8 m line and space could be obtained when the film was exposed to g-line (436 nm), followed by developing with a 0.8 wt% aqueous tetramethylammonium hydroxide (TMAH) solution, where the sensitivity and contrast were determined as 80 mJ/cm 2 and 2.2 respectively. The positive image was successfully converted to poly(benzoxazole) pattern by thermal treatment. Keywords: photoresist, direct synthesis, poly(o-hydroxy-amide), poly(benzoxazole) 1. Introduction Photosensitive polyimides (PSPIs) are widely used as protection and insulation layers of very large scale intergrated circuit, multichip modules for computer, telecommunications and thermal heads because they simplify processing and do not need a photoresist used in the microlithograpy or a toxic etchant such as hydrazine [1]. Most of the standard resist materials used in semiconductor manufacturing are positive type resists based on novolac resins with diazonaphtoquinone (DNQ), where DNQ acts as a dissolution inhibitor for aqueous base development of novolac resins. Therefore, positive-working PSPIs that can be developed with an aqueous base solution have been attracting great interest. A conventional polyimide precursor, poly(amic acid) (PAA) is very soluble in an aqueous alkaline solution, and the dissolution rate is essentially too high to get a sufficient dissolution contrast. Thus, the dissolution rate of PAA has to be reduced by prebaking or post exposure bake. These methods, however, don’t afford a reliable dissolution contrast. To overcome this problem, polyimide containing hydroxy groups and DNQ, or o-nitrobenzyl ester of polyamic acid have been reported [2,3,4]. Poly(o-hydroxy-amide) is a poly(benzoxazole) precursor, attracting increasing attention as an alkaline developable positive -type photosensitive polymer because of its appropriate dissolution rate toward a 2.38 wt% tetramethylammonium hydroxide (TMAH) aqueous solution, and the disappearance of phenol moiety after benzoxazole ring formation. A chlorine free synthetic method using a condensing agent is generally applied to prepare poly(o-hydroxy-amide) from aromatic dicarboxylic acid and bis(o-aminophenol), and polymer is isolated by precipitation from a polymerization solution [5-9]. For the resist formulation, the polymer should be again dissolved in a solvent. This procedure is troublesome. Therefore, it is of interest to develop a more simple procedure, that is, the resist formulation from the polymerization solution without isolation of poly(o-hydroxy-amide). We now report a direct resist formulation method for photosensitive polybenzoxazole. 2. Experimental 2.1. Materials Acetone was purified by distillation and stored over 4-A molecular sieves. N-Methyl-2-pyrrolidinone (NMP) was purified by vacuum distillation from calcium hydride and stored over 4-A molecular sieves. 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoro -propane (1) was purified by recrystallization from hexane / tetrahydrofuran. Other reagents including 1-{1,1-bis[4-(2-diazo-1(2H)naphthalenone-5sulfonyloxy)phenyl]-ethyl}-4-{1-[4-(2-diazo1(2H)naphthalenone-5-sulfonyloxy)phenyl]m ethylethyl}benzene (S-DNQ) were obtained commercially and used as received. N,N’-Isophtaloylbis(benzoxazoline -2-thione) (2) To solution of 2-mercaptobenzoxazole (MB) (0.906 g, 12 mmol) and triethylamine (TEA) (2 mL, 14 mmol) in acetone (10 mL), was dropwise a solution of isophtaloyl chloride (1.22 g, 6 mmol) in acetone (10 mL). After 1 h the mixture was poured into water. The precipitate was collected, washed with water, and dried in vacuo over P 2 O 5 . It was recrystallized from dichloromethane to give white-yellow needles. Yield 1.45 g (56 %) mp: 198 ℃ (lit. 201-202 ℃)[10]: IR (KBr) ν 1720 (C=O), 1604 (Ar), 1355 cm -1 (C=S); 1 H-NMR(CDCl 3 ) σ 8.38 (t, J = 1.8 Hz, 1H), 8.15 (dd, J = 7.7 and 1.8 Hz, 2H), 7.68 (t, J = 7.7 Hz, 1H), 7.59-7.58 (m, 2H), 7.41-7.33 (m, 6H); 13 C-NMR(CDCl 3 ) σ179.0, 167.3, 147.4, 135.4, 132.7, 132.0, 130.2, 129.3, 126.2, 125.7, 113.6, 110.4. 2.2. Synthesis of poly(o-hydroxy-amide) (3) from 1 and 2 To a solution of 2 (0.648 g, 1.5 mmol) in NMP (2.7 mL) was added 1 (0.549 g, 1.5 mmol). The solution was stirred at room temperature for 3 h, and poured into 3w% sodium carbonate aqueous solution (150 mL) to precipitate the polymer. The obtained polymer was washed with water, dried in vacuo over P 2 O 5 . The Yield was 0.700 g (94%): IR (KBr): ν 3300 (OH), 1654 (C=O), 1608 (Ar) and 1253 cm -1 (CF 3 ); 1 H-NMR(DMSO-d 6 ): σ 10.0 (brs, 1H), 9.62 (s, 1H), 8.51 (s, 1H), 8.12 (d, J = 8.0 Hz, 2H), 7.95 (s, 1H), 7.64 (t, J = 8.0 Hz, 1H), 7.01 (brs, 4H) 2.3. Dissolution Rate To a polymerization solution was directly added S-DNQ (30 wt% of polymer 3). Films spin-cast on silicone wafer were pre-baked at115 ℃ for 3 min and exposed through a filtered super-high pressure mercury lamp SH-200. Imagewise exposure was carried out in a contact mode. Exposed films were subjected to developing with a 0.8 wt% TMAH aqueous solution at room temperature. 2.4. Photosensitivity A 1 m thick film obtained from a polymerization solution and S-DNQ (30 wt% of polymer 3) on silicone wafer was exposed to 436 nm light through the filtered super-high-pressure mercury lamp. The characteristic curve was obtained by normalized film thickness against exposed energy. 2.5. Measurement Infrared spectra were recorded on a Horiba FT-720 spectrometer. 1 H and 13 C-NMR spectra were obtained on a Bruker DPX-300 spectrometer. Molecular weights were determined by a gel permeation chromatography (GPC) with polystyrene calibration using a HITACHI D-7100-G equipped with column in THF at 40 ℃ . Thermal analyses were performed on a Seiko EXSTAR 6000-TG / DTA6300 thermal analyzer at a heating rate of 10 ℃・min -1 for thermogravimetric (TG) under nitrogen. 3. Results and Discussion 3.1. Synthesis of poly(o-hydroxy-amide) (3) In a previous paper [10], we reported that active diamides derived from MB reacted with aromatic diamines at room temperature, producing polyamides with high molecular weights. Based on this information, the synthesis of polymer 3 was carried out by the addition of 1 into 2 solution in NMP. The polycondensation proceed smoothly, giving 3 in 94 % yield. O O O S S + HO O in Figure 2. NH2 CF3 N N OH NMP, r.t. 3 h CF3 H2N 1 2 O HO O CF3 N H CF3 OH N H + 2 HN n S O MB 3 The structure of polymer 3 was confirmed as a desired poly(o-hydroxy-amide) by IR and 1 H-NMR spectroscopies. The IR spectrum of polymer 3 showed characteristic O-H, carbonyl of amide group, C=C, and CF 3 bands at, 3300, 1654, 1608, and 1253 cm -1 , respectively. The 1 H-NMR spectrum of polymer 3 is presented in Figure 1. O O c e N H HO d f CF3 N Hb OH n a CF3 g g b c de f a 10.0 9.5 9.0 8.5 8.0 7.5 7.0 6.5 ppm 1 Fig. 1. H-NMR spectrum of polymer 3 in DMSO-d 6 . All peaks were well assigned to the expected polymer structure. The molecular weight of polymer 3 was estimated (relative to a polystyrene standard) by gel permeation chromatography (GPC) in THF. The chromatogram of polymer 3 was a unimodal distribution with a polydispersity of 3.9. The weight-average molecular weight (M w ) was determined as 21,000. 3.2. Lithographic Evaluation The leaving group of active amide, MB in a polymerization solution does not have absorption above 330 nm. In fact, the UV-visible spectrum of a 1 m thick film obtained directly from a polymerization solution is a similar to that of a film obtained from polymer 3, and showed an excellent transparency above 400 nm. Thus, S-DNQ having a strong absorption in the range of 320-440 nm was selected as a photoactive compound. The UV-visible spectra of the film casted from the polymerization solution containing 30 wt% of S-DNQ and its changes upon irradiation with 436 nm light are shown Fig. 2. UV-visible spectral changes of polymer 3 containing 30 wt% S-DNQ. The characteristic absorption band at around 425 nm decreased rapidly with increasing with an irradiation dose. The dissolution rate of resists depends on a concentration of TMAH aqueous solution and a S-DNQ loading. The dissolution rate was estimated by measuring the film thickness after development. Polymer 3 film was easily soluble in a 2.38 wt% of TMAH aqueous solution even in the presence of S-DNQ. After a preliminary optimization study of the concentration of TMAH aqueous solution, we decided to use the 0.8 wt% of TMAH aqueous solution. The dissolution rates of exposed and unexposed areas in the presence of the various DNQ contents were studied. The result presented in Figure 3 shows that the dissolution rate of the unexposed area decreased with increasing the S-DNQ content, and reached to zero under 30 wt% loading of S-DNQ. On the other hand, the solubility of exposed area was almost unchanged even increasing the S-DNQ content. Thus, the suitable S-DNQ content was determined to be 30 wt% of polymer 3. Fig. 3. Relationship between S-DNQ content and dissolution rate. Based on these optimization studies, we formulated a photosensitive polymer system consisting of polymer 3 and 30 wt% of S-DNQ. The sensitivity curve for 2.7 m thick resist (Figure 4) indicated that the sensitivity (D o ) and contrast (r o ) were 80 mJ/ cm 2 and 2.2 with 436 nm light, respectively. Fig. 4. Exposure characteristic curve for polymer 3 containing 30 wt% S-DNQ. Figure 5 presents SEM micrograph of the contact-printed image obtained using the resist system composed of polymer 3 (70 wt%) with S-DNQ (30 wt%), after exposure to 200 mJ/cm2 , and developed with the 0.8 wt% TMAH aqueous solution at room temperature. The clear positive pattern with 8 m line and space was obtained. 3.3. Thermal treatment of the resist system Thermal behavior of the resist system obtained directly from the polymerization solution and S-DNQ was studied by TG (Figure 6). The weight losses were observed from 150 to 330 ℃ due to decomposition of S-DNQ and MB, and elimination of water by formation of oxazole ring. The transformation was also confirmed by the appearance of an absorption band at 1627 cm-1 characteristic of an oxazole ring, and disappearing at 3300 and 1654 cm -1 characteristic of hydroxy and amide groups, respectively. Fig. 6. TG curve of polymer 3 obtained directly from polymerization solution and S-DNQ. Thus, the isothermal treatment of this resist system was carried out at 350 °C for 30 min under nitrogen. Figure 7 shows TG curves of i) a conventional poly(benzoxazole) ( PBO) and, ii) the PBO obtained by the thermal treatment of the resist system. Both TG curves are same, indicating the satisfactory formation of PBO accompanied with quantitative decomposition of MB and S-DNQ. The printed film was heated at 150 ℃ for 20 min, 250 ℃ for 30 min, then 350 ℃ for 30 min to convert into the PBO film. Figure 8 shows a SEM micrograph of the PBO film. The positive image in the resist remained unchanged. Fig. 7. TG curves of PBOs. Fig. 5. SEM micrograph of pattern from the system consisting of polymer 3 and S-DNQ. This direct resist formulation method is advantageous compared to the conventional two step one. Fig. 8. SEM image of thermally treated pattern. 4. Conclusion Poly(o-hydroxy-amide) 3 as a poly(benzoxazole) precursor was successfully prepared by the polycondensation of 1 and 2. The resist system was directly formulated from the polymerization solution with S-DNQ. This resist showed a high sensitivity 80 mJ/cm 2 and a contrast of 2.2 with 436 nm light. The positive image obtained was converted to the corresponding PBO pattern by thermal treatment. References 1. T. Omote, “Polyimides”, M. Ghosh, and K. L. Miital, Eds., Dekker, New York, 1996, p.121. 2. S. Hayase, K. Takano, Y. Mikogami, and Y. Nakano, J. Electronchem. Soc., 138 (1979) 3625. 3. T. Omote, K. Koseki, and T. Yamaoka, Macromolecules, 23 (1990) 4788. 4. T. Omote, S. Hayashi, K. Ishii, K. Naito, and T. Yamaoka, Adv. Technol., 4 (1993) 277. 5. D. N. Khanna and W. H. Mueller, Polym. Eng. Sci, 29 (1989) 954. 6. H. Ahne, R. Rubner, and E. Kuhn, EP0023626, to Siemens, 1980. 7. R. Rubner, Adv. Mater, 2 (1990) 452. 8. T. Yamaoka, N. Nakajima, K. Koseki, and Y. Maruyama, J. Polym. 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