2014 Workshop on Innovative Nanoscale Devices and Systems (WINDS)
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2014 Workshop on Innovative Nanoscale Devices and Systems (WINDS)
Geometry Dependence of the Switching time in MTJs
with a Composite Free Layer
Alexander Makarov, Viktor Sverdlov, and Siegfried Selberherr
Institute for Microelectronics, TU Wien
Gußhausstraße 27-29, A-1040 Wien, Austria
Tel: +43-1-58801-36010 Fax: +43-1-58801-36099
email: Selberherr@TUWien.ac.at
Magnetoresistive random access memory with spin transfer torque (STT-MRAM) is a
promising candidate for future universal memory. Perpendicular MTJs with an
interface-induced anisotropy show potential, but still require damping reduction and
thermal stability increase. Thus, finding alternative architectures for MTJ structures is
of considerable importance for the success of STT-MRAM. Previously an MTJ with a
composite free layer (C-MTJ) was proposed. The free magnetic layer of such a
structure consists of two equal parts of half-elliptic form separated by a non-magnetic
spacer. C-MTJs demonstrate a substantial decrease of the switching time and
switching current. We have investigated the switching statistics dependence on the
geometry of the composite layer. We find that in C-MTJs with an elongated short axis
the width of the switching time distribution is almost ~2000 times narrower than that in
MTJs with a monolithic free layer. Therefore, the investigated C-MTJ offers great
potential for performance optimization of STT-MRAM devices.
This research is supported by the European Research Council through the Grant #247056 MOSILSPIN.
1. Swapan K. Mandal et al, ACS Nano 5, 2779 (2011).
2. Y. Okawa, Swapan K. Mandal et al., J. Am. Chem. Soc. 133, 8227 (2011).
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