BOOKS & Proceedings Volumes (Authored & Edited)
1.
Boyd, I.W. (Author), Laser Processing of Thin Films & Microstructures: Oxidation, Deposition and Etching,
1987, Springer Series on Materials Science, 3, Springer-Verlag, London, Berlin, (ISBN: 3 540 17951 8) pp.320.
2.
Boyd, I.W., Krimmel, E.F. (Eds.) Photon, Beam and Plasma Assisted Processing, 1989, North Holland,
Amsterdam, New York, (ISBN: 0 444 87301 5) pp.703.
3.
Boyd, I.W., Rimini, E. (Eds.) Beam Processing & Laser Chemistry E-Mrs Spring Conference, Strasbourg,
France, 30 May - 2 June 1989 - Preface. Applied Surface Science 43, R7-R, 1989, North-Holland, Amsterdam,
(ISBN: 0 444 88555 2) pp.467.
4.
Boyd, I.W., Fogarassy, E., Stuke, M. (Eds.) Surface Processing with Laser Assisted Chemistry, 1990, NorthHolland, Amsterdam, (ISBN: 0 444 88947 7) pp.476.
5.
Konov, V.I., Luk'yanchuk, B.S., Boyd, I.W. (Eds.). Laser Surface Microprocessing, 1990, Proc. SPIE, Vol.
1352, Washington, (ISBN: 0 8194 0413 6) pp.352.
6.
Boyd, I.W., Jackman, R.B., (Eds.) Photochemical Processing of Electronic Materials, 1991, Academic Press,
London, San Diego, (ISBN:0 12 121740 X) pp.513.
7.
Boyd, I.W., (Ed.) Laser Surface Processing and Characterisation, 1992, North-Holland, Amsterdam, (ISBN: 0
444 89419 5), pp.535.
8.
Boyd, I.W., Haruna, M., Jerominek, H., Konov, V.I., Loper, G.L., Peckerar, M.C., Polla, D.L., (Eds.) Laser
Assisted Fabrication of Thin Films and Microstructures, 1993, Proc. SPIE, Vol. 2045, Washington, (ISBN: 0
8194 1304 6) pp.366.
9.
Boyd, I.W., Perriere, J., Stuke, M. (Eds.) Surface Processing: Laser Lamp, Plasma, 1999, Elsevier, Amsterdam
(ISBN: 0-08-043610-2) pp 658.
10. Peled, A., Hess, P., Hanabusa, M., Boyd, I.W., (Eds.) Photo-Excited Processes & Applications, 2000, Proc.
ICPEPA-3, Applied Surface Science, 154/155 pp.747.
11. Blank, D.H.A., Hoffman, P., Slaoui, A, Boyd, I.W., (Eds.) Photon-Induced Material Processing, 2001, Vol. 92,
EMRS Proceedings, Elsevier, Amsterdam.
12. Chrisey, D., Lippert, T., Millon, E., Boyd, I.W., (Eds.) Photonic-Processing of Surfaces, Thin Films, and
Devices, 2003, Elsevier, Amsterdam (ISBN: 0040-6090) pp 623.
13. Chrisey, D. B., Dinescu, M., Boyd, I.W., Rode, A., (Eds.) Advanced Optical Processing of Materials, 2003,
MRS, Warrendale, USA (ISBN: 1-55899-717-2) pp. 216.
Invited and Commissioned Chapters
1.
Boyd, I.W., "Laser Doping and Oxidation," Chapter 10 of "Laser Microfabrication: Thin Film Processes and
Lithography," 1989, Eds., Ehrlich, D.J., Tsao, J.Y., Academic, New York, pp. 539-580.
2.
Boyd, I.W., "Photochemical Processing: Fundamental Mechanisms & Operating Criteria", Chapter 1 of
"Photochemical Processing of Electronic Materials", 1991, Eds., Boyd, I.W., Jackman, R.B., Academic Press,
London, pp.1-40.
3.
Beech, F., Boyd, I.W., "Laser Ablation of Inorganic Solids: Thin Films and Superconductors", Chapter 15 of
"Photochemical Processing of Electronic Materials", 1991, Eds., Boyd, I.W., Jackman, R.B., Academic Press,
London, pp.388-432.
4.
Boyd, I.W., Chrisey, D.B., “Pulsed Laser Deposition of Thin Films”, Chapter D1.8, of "Handbook of Laser
Technology", Taylor & Francis CRC Press (2003).
5.
Boyd, I.W., Zhang, J.-Y., Kogelschatz, U., "Development & Applications of UV Excimer Lamps", Chapter 6 of
"Photo-Excited Processes, Diagnostics and Applications: Fundamentals and Advanced Topics", 2003, Ed.,
Peled, A., Kluwer Academic, Dordrecht, pp.161-195.
Guest Edited Journals
1.
Boyd, I.W., (Editor), Applied Physics A: Solids & Surfaces, 1988, 46 (4).
2.
Boyd, I.W., (Editor), Applied Physics A: Solids & Surfaces, 1988, 46 (11.)
3.
Boyd, I.W., Habermeier, U. (Eds.), Materials Science & Engineering, 1992, (B), 13 (1).
4.
Boyd, I.W., (Editor), Advanced Materials for Optoelectronics & Electronics, 1993, 2 (1&2).
Refereed Papers
1.
Boyd, I.W., Wilson, J.I.B., "Laser Annealing of Semiconductor Devices," Nature, 1980, 287, 278.
2.
Boyd, I.W., Wilson, J.I.B., West, J.L., "Laser Induced Oxidation of Si", Thin Solid Films, 1981, 83, L173-175.
3.
Boyd, I.W., Wilson, J.I.B., "Oxidation of Si Surfaces by CO 2 Laser" Appl. Phys. Lett., 1982, 41, pp.162-164.
4.
Boyd, I.W., Wilson, J.I.B., "A Study of Thin Silicon Dioxide Films Using Infrared Absorption Techniques", J.
Appl. Phys., 1982, 53, pp.4166-4172.
5.
Hassan, Y.M., Boyd, I.W., Riddoch, F., Wilson, J.I.B., "Effects of Laser Radiation on Glow Discharge
Amorphous Silicon Diodes," IEE Solid-State and Electron Devices, 1982, 129, pp.180-184.
6.
Boyd, I.W., Crowder, J.G., "A Real-Time Visual Display of a High Power Laser Beam", J. Phys. (E): Scientific
Instruments, 1982, 15, pp.421-422.
7.
Boyd, I.W., Wilson, J.I.B., "CO2 Laser Oxidation of Si," Physica, 1983, 118B, pp.1030-1032.
8.
Boyd, I.W., "Laser Enhanced Oxidation of Si," Appl. Phys. Lett., 1983, 42, pp.728-730.
9.
Boyd, I.W., "A Real-time Method for Monitoring the 3D Extent of High Power CW Laser Beams", Optics and
Laser Technology, 1983, 15, pp.150-152.
10. Boyd, I.W., "Incorporation of CO2 Laser Grown Oxides into Conventional MOS Devices," J. Appl. Phys., 1983,
54, pp.3561-3565.
11. Boyd, I.W., "Laser Induced Oxidation of Silicon Surfaces", in "Surface Studies with Lasers", 1983, Eds.,
Aussenegg, F.R., Leitner, A., Lippitsch, M.E., Springer-Verlag, Berlin, pp.193-201.
12. Boyd, I.W., "Incorporation of O Atoms into As+ Implanted Silicon during CW CO2 Laser Annealing in O2"
Appl. Phys. A, 1983, 31, pp.71-74.
13. Boyd, I.W., Wilson, J.I.B., "Growth of Oxide Layers on Si Using Laser Radiation" in "Insulating Films on
Semiconductors", 1983, ed. Verweij, J.F., Wolters, D.R., North-Holland, Amsterdam, pp.59-62.
14. Boyd, I.W., "Review of Laser Beam Applications for Processing Si", Contemporary Physics, 1983, 24, pp.461490.
15. Boyd, I.W., Wilson, J.I.B., "Laser Processing of Silicon", Nature, 1983, 303, pp.481-486. (Front Cover Feature).
16. Boyd, I.W., Binnie, T.D., Wilson, J.I.B., Colles, M.J., "Absorption of Infrared Radiation in Silicon", J. Appl.
Phys., 1984, 55, pp.3061-3063.
17. Boyd, I.W., Moss, S.C., Boggess, T.F., Smirl, A.L., "Initial Observation of the Crystal-Amorphous Transition and
the Formation of Ripple Patterns on Silicon Induced by 7 ps Pulses at 1.05 µm", in "Energy Beam-Solid
Interactions and Transient Thermal Processing", 1984, Eds., Fan, J.C.C., Johnson, N.M., North-Holland, New
York, pp.203-208.
18. Boggess, T.F., Moss, S.C., Boyd, I.W., Smirl, A.L., "Nonlinear Optical Energy Regulation and Nonlinear
Absorption in Silicon", Optics Letters, 1984, 9, pp.291-293.
19. Boyd, I.W., Wilson, J.I.B., "The Dielectric Strength of CO2 Laser Grown Silicon Dioxide", Solid State
Electronics, 1984, 27, pp.209-211.
20. Boyd, I.W., Moss, S.C., Boggess, T.F., Smirl, A.L. "Inhomogeneous Energy Disposition in c-Si with pico- second
Pulses of 1µm Radiation" in "Laser Processing and Diagnostics", 1984, Ed., Bäuerle, D., Springer Verlag,
Heidelberg, pp.14-18.
21. Boyd, I.W., Boggess, T.F., Moss, S.C., Smirl, A.L., "Optical Regulation Using Crystalline Silicon", in Laser
Processing and Diagnostics, 1984, Ed., Bäuerle, D., Springer Verlag, Heidelberg, pp.50-53.
22. Boyd, I.W., Moss, S.C., Boggess, T.F., Smirl, A.L., "Various Phase Transitions and Changes in Surface
Morphology of Crystalline Silicon Induced by 4-260 Picosecond Pulses of 1 Micron Radiation," Appl. Phys.
Lett., 1984, 45, pp.80-82.
23. Boyd, I.W., "Laser Assisted Pyrolytic Growth and Photochemical Deposition of Thin Oxide Films", in "Laser
Processing and Diagnostics", 1984, Ed., Bäuerle, D., Springer Verlag, Heidelberg, pp.274-287.
24. Smirl, A.L., Boggess, T.F., Boyd. I.W., Moss., S.C., "Pulsewidth Dependence of the Nonlinear Absorption,
Melting Threshold, and Phase Transitions of Silicon Irradiated by 1 Micron Picosecond Pulses", in "Proceedings
of the International Conference on the Physics of Semiconductors", 1984, Eds., Chadi, J.D., Harrison, W.A.,
Springer Verlag, Berlin, pp.1485-1489.
25. Moss, S.C., Boyd, I.W., Boggess, T.F., Smirl, A.L., "Pulsewidth Dependence of Various Bulk Phase Transitions
and Morphological Changes of c-Si Irradiated by 1 µm Picosecond Pulses", in "Ultrafast Phenomena IV",
1984, Eds., Auston, D.H., Eisenthal, K.B., Springer Verlag, New York, pp.184-186.
26. Smirl, A.L., Boggess, T.F., Moss, S.C., Boyd, I.W., "Pulsewidth Dependence of Nonlinear Energy Deposition and
Redistribution in Si, GaAs and Ge, During 1 µm Picosecond Irradiation", Journal of Luminescence, 1984, 30,
pp.272-289.
27. Boggess, T.F., Moss, S.C., Boyd, I.W., Smirl, A.L., "Nonlinear Optical Energy Switching in Si", in "Ultra-fast
Phenomena IV", Eds., Auston, D.H., Eisenthal, K.B., 1984, Springer Verlag, New York, pp. 202-204.
28. Boyd, I.W., Moss, S.C., "Kinetics of Pulsed Laser Annealing", Nature, 1985, 313, 100.
29. Boggess, T.F., Smirl, A., Moss, S.C., Boyd, I.W., Van Stryland, E., "Optical Limiting in Gallium Arsenide",
IEEE J. Quantum Electronics, 1985, QE-21, pp.488-494.
30. Smirl, A.L., Boggess, T., Boyd, I.W., Moss, S., Bohnert, K., Mansour, K., "Spatial and Temporal Resolution of
the Nonlinear Optical Properties and Melt Dynamics of Si at 1 µ m", SPIE, 1985, 533, pp.87-100.
31. Moss, S.C., Boyd, I.W., Boggess, T.F., Smirl, A.L., "Spatially and Temporally Resolved Reflectivity Profiles of
c-Si Irradiated by 48 ps Pulses of 1 µ m Laser Radiation", in "Energy Beam-Solid Interactions & Transient
Thermal Processing", 1985, Eds., Biegelsen, D.K., Rozgonyi, G., Shank, C.V., pp.107-111.
32. Smirl, A.L., Boggess, T.F., Moss, S.C., Boyd, I.W., "Pulsewidth Dependence of Nonlinear Energy Deposition and
Redistribution in Si, GaAs, and Ge, During 1 Micron Picosecond Irradiation", in "High Excitation and Short
Pulse Phenomena", 1985, ed., Pilkuhn, M., North-Holland, Amsterdam.
33. Boggess, T.F., Smirl, A.L., Bohnert, K., Mansour, K., Moss, S.C., Boyd, I.W., "Dynamic Picosecond Reflectivity
Studies of Highly Optically Excited c-Si", SPIE, 1985, 540, pp.l40-145.
34. Boyd, I.W., Moss, S.C., Boggess, T.F., Smirl, A.L., "Temporally Resolved Imaging of Si Surfaces Melted with
Intense Picosecond 1 µm Radiation", Appl. Phys. Lett., 1985, 46, pp.366-368.
35. Smirl, A.L., Boggess, T.F., Boyd, I.W., Moss, S.C., Bohnert, K., Mansour, K. "Application of Nonlinear Optical
Properties and Melt Dynamics of c-Si to Optical Limiting of 1micron Picosecond Radiation", Optical
Engineering, 1986, 25, pp.157-165.
36. Boyd, I.W., "Photoformation of Silicon Dielectrics", in "Laser Processing and Diagnostics (II)", 1986, Eds.,
Bäuerle, D., Kompa, K.L., Laude, L., Les Editions de Physique, Les Ulis, pp.229-242.
37. Boyd, I.W., Boggess, T.F., Smirl, A.L., Moss, S.C., "Dynamic Picosecond Studies of Optically Excited Silicon",
Optica Acta, 1986, 33, pp.527-534.
38. Micheli, F., Boyd, I.W., "Laser Microfabrication of Thin Films: Part I", Optics and Laser Technology, 1986, 18,
pp.313-317.
39. Boyd, I.W., Micheli, F., "Microfabrication of Thin Films", Nature, 1986, 321, 649.
40. Smirl, A.L., Boyd, I.W., Boggess, T.F., Moss, S.C., van Driel, H.M., "Structural Changes Produced in Si by
Intense 1 µm Picosecond Pulses", J. Appl. Phys., 1986, 60, pp.1169-1177.
41. Boggess, T.F., Bohnert, K., Mansour, K., Moss, S.C., Boyd, I.W., Smirl, A.L., "Simultaneous Measurement of the
Two-Photon Coefficient and Free Carrier Cross-Section above the Bandgap of Crystalline Silicon", IEEE J.
Quantum Electronics, 1986, QE-22, pp.360-368.
42. Smirl, A.L., Boyd, I.W., Boggess, T.F., Moss, S.C., Pinizzotto, R.F., "Cross Section TEM Characterisation of
Structure Produced in Si by One Micron Picosecond Pulses", in "Beam-Solid Interactions and Phase
Transformations", 1986, Eds., Kurz, H., Olson, G.L., Poate, J.M., MRS, Pittsburgh, pp.213-218.
43. Boyd, I.W., Boggess, T.F., Smirl, A.L., Moss, S.C., "Fundamentals and Applications of the Interaction of
Picosecond One Micron Radiation", in "Trends in Quantum Electronics", 1986, Eds., Prokhorov, A.M., Ursu,
I., Springer Verlag, pp.281-300.
44. Micheli, F., Boyd, I.W., "Laser Microfabrication of Thin Films: Part II", Optics and Laser Technology, 1987,
19, pp.19-25.
45. Boyd, I.W., Wilson, J.B., "Structure of Ultrathin SiO 2 Films", Appl. Phys. Lett., 1987, 50, pp.320-322.
46. Boyd, I.W., "New Interpretation of Structure of Thermally Grown SiO 2", Electronics Letters, 1987, 23, pp.411413.
47. Micheli, F., Boyd, I.W., "Laser Microfabrication of Thin Films: Part III", Optics and Laser Technology, 1987,
19, pp.75-82.
48. Boyd, I.W., Micheli, F., "Wavelength Dependence of Optical Oxidation of Silicon", Electronics Letters, 1987,
23, pp.298-300.
49. Boyd, I.W., "Deconvolution of the Infrared Absorption Peak of the Vibrational Mode of Silicon Dioxide:
Evidence for Structural Order?", Appl. Phys. Lett., 1987, 51, pp.418-420.
50. Micheli, F., Boyd, I.W., "Photon Controlled Oxidation of Si", Appl. Phys. Lett., 1987, 51, pp.1149-1151.
51. Boyd, I.W., Wilson, J.I.B., "The Silicon-Silicon Dioxide Interface: An Infrared Study", J. Appl. Phys., 1987, 62,
pp.3195-3199.
52. Boyd, I.W., "Optically Enhanced Oxidation", in "Interfaces Under Laser Radiation", 1987, Eds., Laude, L.D.,
Bäuerle, D., Wautelet, M., Martinus Nijhoff, Dordrecht, pp.409-426.
53. Boyd, I.W., Micheli, F., "A Study of Rapid Thermal Oxidation of Silicon Photonic Effects", in "Photon, Beam
and Plasma Enhanced Processing", 1988, Eds., Golanski, A., Nguyen, V.T., Krimmel, E.F., Les Editions de
Physique, Les Ulis, pp.177-184.
54. Micheli, F., Boyd, I.W., "In-Situ Monitoring of Laser-Oxidation", Appl. Phys. A, 1988, 47, pp.249-253.
55. Boyd, I.W., "Non-Bulk SiO Bonding at Si-SiO2 Interface", Electronics Letters, 1988, 24, pp.1062-1063.
56. Boyd, I.W., "Photo-Oxidation of Si: Reaction Mechanisms and Film Structure", in "SiO2 and its Interfaces",
1988, Eds., Pantelides, S.T., Lucovsky, G., MRS, Vol. 105, Pittsburgh, pp.23-34.
57. Micheli, F., Boyd, I.W., "Growth and Structure of Argon Laser Grown SiO2", in "The Physics and Technology
of Amorphous SiO2", 1988, ed., Devine, R.A., Plenum, London, pp.331-335.
58. Boyd, I.W., Micheli, F., "Confirmation of the Wavelength Dependence of Si Oxidation Induced by Visible
Radiation", in "Emerging Technologies for In-Situ Processing", 1988, Eds., Ehrlich, D.J., Nguyen, V.T.,
Martinus Nijhoff, Dordrecht, pp.171-178.
59. Boyd, I.W., "Recent Advances in Laser Applications of Microelectronic Materials and Devices", J. Phys. D:
Applied Physics, 1988, 31, pp.S23-S27.
60. Boyd, I.W., Nolan, A.J., Nayar, V., Micheli, F., Overbury, A., Davidson, A., Swanson, G., George, S, "Laser
Repair of Faulty Packaged VLSI Chips", Electronics Letters, 1988, 24, pp.1474-1475.
61. Overtoom, F., Boyd, I.W., "Dual Wavelength Temperature Measurement of Laser Heated Silicon", J. Phys. (E):
Scientific Instruments, 1988, 21, pp.550-553.
62. Nayar, V., Boyd, I.W., Goodall, F., Arthur, G., "Low Temperature Oxidation of Crystalline Silicon Using
Excimer Laser Irradiation", Applied Surface Science, 1989, 36, pp.134-140.
63. Boyd, I.W., "Microstructure and Patterning of Laser Initiated Oxide Growth", SPIE, 1989, 1033, pp.212-222.
64. Boyd, I.W., "Ultrathin SiO2 Films: Photo-Induced Growth" in "Laser & Particle-Beam Chemical Processes on
Surfaces", 1989, Eds., Johnson, A.W., Loper, G., Sigmon, T.W., MRS, Vol. 129, Pittsburgh, pp.421-433.
65. Tyrrell, G., Boyd, I.W.., Jackman, R.B., "Ion Beam Assisted Etching of Silicon with Bromine: The Role of the
Adsorbed State", Applied Surface Science, 1989, 43, pp.439-446.
66. Nayar, V., Boyd, I.W., "Near UV 260-370nm Enhancement of Si Oxidation", Chemtronics, 4, 1989, pp.101-102.
67. Brown, M., Shiloh, M., Jackman, R., Boyd, I.W., "Geometric Optimisation for Laser Ablation of Superconductors", Applied Surface Science, 1989, 43, pp.382-386.
68. Nayar, V., Patel, P., Boyd, I.W., "Atmospheric Pressure, Low Temperature UV/Ozone Oxidation of Si",
Electronics Letters, 1990, 26, pp.205-206.
69. Ghisoni, M., Gibson, M., Rivers, A., Boyd, I.W., Parry, G., Roberts, J.S., Post Growth Tailoring of Optical
Properties of GaAs-AlGaAs Multiple Quantum Wells", Electronics Letters, 1990, 26, pp.1058-1059.
70. Shiloh, M., Wood, I., Brown, M., Beech, F., Boyd, I.W., "Formation of (Ca1-xSrx)2PbO4 in Bi (Pb)=Sr-Ca-Cu-O
System: Correlation with Formation of the 2223 Phase", J. Appl. Phys., 1990, 68, pp.2304-2307.
71. Patel, P., Nayar, V., Micheli, F., Boyd, I.W., "Photo-Engineering of Thin Film Structures: Si Oxidation", SPIE,
1990, pp.102-112.
72. Sajjadi, A., Kuen-Lau, K., Beech, F., Saba, F., Boyd, I.W., "Laser Ablation Deposition of Uniform Thin Films of
Bi2Sr2CaCu2Ox", Applied Surface Science, 1990, 46, pp.84-88.
73. Patel, P., Boyd, I.W., "Low Temperature VUV Enhanced Growth of Thin SiO2 Films", Applied Surface Science,
1990, 1352, 46, pp.352-356.
74. Sajjadi, A., Kilgallon, S., Beech, F., Saba, F., Boyd, I.W., "Thin Film Superconductors Grown by Laser Ablation
of PbO and BiPbSrCaCuO", Electronics Letters, 1991, 27, pp.345-346.
75. Naqvi, S.H., Beech, F., Boyd, I.W., "Preparation and Growth of Thin Film Pb2Sr2Ca0.5Y0.5Cu3O8+∂ Superconductors by Laser Ablation", Electronics Letters, 1991, 27, pp.430-431.
76. Kazor, A., Boyd, I.W., "UV-Assisted Growth of 100Å Thick SiO2 at 550˚ C", Electronics Letters, 1991, 27,
pp.909-911.
77. Amirhagi, S., Beech, F., Vickers, M., Barnes, P., Tarling, S., Boyd, I.W., "Growth of CeO2 Thin Films by Laser
Ablation", Electronics Letters, 1991, 27, pp.2304-2305.
78. Patel, P., Bergonzo, P., Kogelschatz, U., Boyd, I.W., "Photo-Induced Deposition of Thin SiO2 Films using a
Novel Large Area Excimer Lamp", in “Rapid Thermal and Integrated Processing”, 1991, Eds., Gelpey, J.C.,
Green, M.L., Wortman, J.J., Singh, R., MRS, Pittsburgh, pp.299-304.
79. Saba, F., Kilner, J.A., Sagoo, P., Sajjadi, A., Beech, F., Boyd, I.W, "Target Phase Composition effect on
BiPbSrCaCuO Thin Films Deposited by Laser Ablation", Materials Science & Engineering (B), 1992, 13,
pp.63-66.
80. Nayar, V., Boyd, I.W., "An Effective Oxidation Technique for Formation of SiO2 at <500˚C" in "Insulating
Films on Semiconductors", 1991, Eds., Eccleston, W., Uren, M.J., IOP, Bristol, pp.163-166.
81. Amirhagi, S., Archer, A., Taguiang, B., McMinn, R., Barnes, P., Tarling, S., Boyd, I.W., "Thin Film Deposition
of Dielectric Oxides by Laser Ablation", Applied Surface Science, 1992, 54, pp.205-209.
82. Sajjadi, A., Yau, M.K., Saba, F., Beech, F., "Laser Ablation Deposition of PbO/BiPbSrCaCuO", Applied Surface
Science, 1992, 54, pp.154-159.
83. Naqvi, S.H.H., Boyd, I.W., "In Situ and Multilayer Laser Ablation Deposition of Pb 2Sr2Y0.5Ca0.5Cu3O8+∂ Thin
Films", Applied Surface Science, 1992, 54, pp.166-170.
84. Naqvi, S., Sajjadi, A., Amirhagi, S., Beech, F., Boyd, I.W., "Laser Ablation Deposition of Superconducting and
Dielectric Thin Films", Materials Science & Engineering (B), 1991, 13, pp.53-56.
85. Bergonzo, P., Patel, P., Kogelschatz, U., Boyd, I.W., "Development of a Novel Large Area Excimer Lamp for
Direct Photo-Deposition of Thin Films", Applied Surface Science, 1992, 54, pp.424-429.
86. Saba, F., Sajjadi, A., Beech, F., Boyd, I.W., "Cluster Emissions and Production of BiPbSrCaCuO Thin
Films
by Laser Ablation", in “High Tc Superconductor Thin Films”, 1992, ed., Correra, L., Elsevier, Amsterdam,
pp.257-262.
87. Kazor, A., Boyd, I.W., "Low Temperature Photo-Assisted Oxidation of Silicon", Applied Surface Science 1992,
54, pp.460-464.
88. Kazor, A., Boyd, I.W., "Low Temperature UV Growth of SiO2 in O2 and N2O", in Photons and Low Energy
Particles in Surface Processing, 1992, Eds., Ashby, C.I.H., Brannon, J.H., Pang, S.W., MRS, Pittsburgh pp.371376.
89. Beech, F., Amirhaghi, S., Sajjadi, A., Boyd, I.W., "Laser Ablation for the Synthesis of Oxides", in Laser
Ablation of Electronic Materials, 1992, Eds., Fogarassy, E., Lazare, S., North-Holland, Amsterdam, pp.341350.
90. Cracium, V., Reader, A.H., Kersten, W., Timmers, J., Gravensteijn, D.J., Boyd, I.W., "UV Assisted Oxidation of
SiGe Strained Layers”, Thin Solid Films, 1992, 222, pp.145-148.
91. Boyd, I.W., "Laser Ablation Deposition of Thin Films", in “Laser Deposition of Advanced Materials” 1993,
Eds., Allegrini, M., Giardini-Guidoni, A., Morone, A., Edizioni ETS, Pisa, pp.3-13.
92. Craciun, V., Cracium, D., Boyd, I.W., "Reactive Pulsed Deposition of Thin TiN Films", Materials Science &
Engineering B, 1993, 18, pp.178-180.
93. Amirhaghi, S., Beech, F., Craciun, V., Sajjadi, A., Vickers, M., Tarling, S., Barnes, P., Boyd, I.W., Growth of
Cerium Oxide Buffer Layers and Superconducting Thin Films on Silicon", in “Layered Superconductors
Fabrication, Properties & Applications”, 1993, Eds., Shaw, D.T., Tsuei, C.C., Schneider, T.R., Shiohara, Y.,
MRS, Pittsburgh pp.501-506.
94. Naqvi, S.H.H., Vickers, M., Tarling, S., Barnes, P., Boyd, I.W., "Preparation and Growth of PbSrYCaCuO Thin
Film Superconductors", in “Laser Ablation in Materials Processing: Fundamentals & Applications”, 1993,
Eds., Braren, B., Dubowski, J.J., D.P. Norton, D.P., MRS, Pittsburgh, pp.287-292.
95. Kazor, A., Boyd, I.W., "Ozone Oxidation of Silicon", Electronics Letters, 1993, 29, pp.115-116.
96. Bergonzo, P., Kogelschatz, U., Boyd, I.W., "Direct photo-deposition of silicon dioxide films using a xenon
excimer lamp", Applied Surface Science, 1993, 69, pp.393-397.
97. Kazor, A., Boyd, I.W., “Ozone Induced Rapid Low Temperature Oxidation of Silicon”, Appl. Phys. Lett., 1993,
63, pp.2517-2519.
98. Bergonzo, P., Boyd, I.W., “Low Pressure Photodeposition of Silicon Nitride films using a Xenon Excimer
Lamp”, Appl. Phys. Lett., 1993, 63, pp.1757-1759.
99. Craciun, V., Craciun, D., Vickers, M., Tarling, S., Barnes, P., Boyd, I.W., "Pulsed Laser Deposition of High
Quality ZnO Thin Films", in “Laser Ablation in Materials Processing: Fundamentals & Applications”, 1993,
Eds., Braren, B., Dubowski, J.J., Norton, D.P. MRS, Pittsburgh, pp.489-494.
100. Craciun, V., Craciun, D., Amirhaghi, S., Vickers, M., Tarling, S.E., Barnes, P., Boyd, I.W., "Titanium Oxynitride
Thin Film Deposition by PLD of Ti Targets in Nitrogen", in Laser Ablation in Materials Processing:
Fundamentals & Applications, 1993, Eds., Braren, B., Dubowski, J.J., Norton, D.P. MRS, Pittsburgh, pp.337342.
101. Naqvi, S.H.H., Boyd, I.W., “Superconductivity in PbCuSrYCaCuO Without High Pressure Oxygen Annealing”,
Physica C, 1993, 213, pp.161-166.
102. Sajjadi, A., Boyd, I.W., "Pulsed Laser Deposition of Superconducting Thin Films of 2223 Phase of
(BiPb)2Sr2Ca2Cu3O10 on MgO", Appl. Phys. Lett., 1993, 63, pp.3373-3375.
103. Craciun, V., Boyd, I.W., “VUV Oxidation of Si and SiGe”, in Rapid Thermal Processing, 1993, ed., Fair, R.B.,
Lojek, B., (Springer-Verlag, Berlin), pp.363-368.
104. Boyd, I.W., Craciun, V., Kazor, A., “UV and VUV Oxidation of Si and SiGe”, Jpn. J. Appl. Phys., 1993, 32,
pp.6141-6146.
105. Flicstein, J., Leon, B., Boyd, I.W., “UV Routes for Approaching Low Temperature Dielectrics Deposition in III-V
Technology”, 1994, SPIE, 2045, pp.160-173.
106. Sajjadi, A., Boyd, I.W., "Growth of 2223 Phase of BiPbSrCaCuO Thin Film Superconductors by the PLD
Layered Technique", 1994, SPIE, 2045, pp.30-39.
107. Kazor, A., Boyd, I.W., "Growth and Modelling of UV Induced Oxidation of Silicon", J. Appl. Phys., 1994, 75,
pp.227-231.
108. Boyd, I.W., 'Thin Film Growth by Pulsed Laser Deposition”, in Laser in Engineering, 1994, ed., Waidelich, W.,
Springer-Verlag, Berlin, pp.349-359.
109. Bergonzo, P., Boyd, I.W., "Photo-CVD of Dielectric Materials by Pseudo-continuous Excimer Sources", SPIE,
1994, 2045, pp.174-183.
110. Craciun, V., Boyd, I.W., Reader, A., Kersten, W.J., Hakkens, F.J.G., Oosting, P.H., Vandenhoudt, D.E.W.,
“Microstructure of Oxidised Layers Formed by the Low Temperature Ultraviolet Assisted Dry Oxidation of
Strained Si0.8Ge0.2 Layers on Si”, J. Appl. Phys., 1994, 75, pp.1972-1976.
111. Tyrrell, G., York, T., Cherief, N., Givord, G., Lawler, J., Lunney, J. G., Buckley, M., Boyd, I.W., “Kinetic energy
and mass distributions of ablated species formed during pulsed laserdeposition”, Microelectronic Engineering,
1994, 25, pp.247-252.
112. Boyd, I.W., “Pulsed Laser Deposition”, in Excimer Lasers and New Trends in Laser Technology, 1994, Eds.,
Metev, S., Sepold, G., Meisenbach, Bamberg, pp.179-188.
113. Bergonzo, P., Boyd, I.W., “Rapid Photo-Deposition of Silicon Dioxide Films using 172nm VUV Light”,
Electronics Letters, 1994, 30, pp.606-608.
114. Kazor, A., Gwilliam, R., Boyd, I.W., Growth Rate Enhancement Using Ozone During Rapid Thermal Oxidation
of Silicon, Appl. Phys. Lett., 1994, 65, pp.412-414.
115. Bergonzo, P., Boyd, I.W., “VUV Induced Growth of Si Oxynitrides”, Microelectronic Engineering, 1994, 25,
pp.345-350.
116. Boyd, I.W., “Vacuum Ultraviolet Deposition of Silicon Dielectrics”, in Semiconductor Processing and
Characterisation with Lasers, 1994, (Trans Tech, Switzerland,) ed., Brieger, M., Dittrich, H., Klose, M.,
Schock, H.W., Werner, J., pp.81-92.
117. Kazor, A., Jeynes, C., Boyd, I.W., Fluorine Enhanced Oxidation of Si at Low Temperatures”, Appl. Phys. Lett.,
1994, 65, pp.1572-1574.
118. Amirhaghi, S., Craciun, V., Craciun, D., Elders, J., Boyd, I.W., “Low Temperature Growth of Highly Transparent
c-axis Oriented ZnO Thin Films by Pulsed Laser Deposition”, Microelectronic Engineering, 1994, 25, pp.321326.
119. Craciun, V., Boyd, I.W., Reader, A., Vandenhoudt, D.E.W., “Low Temperature Synthesis of Ge Nanocrystals in
SiO2”, Appl. Phys. Lett., 1994, 65, pp.3233-3235.
120. Boyd, I.W., “Pulsed Laser Deposition of Thin Films”, in Laser and Ion Beam Modification Of Materials, 1994,
Eds., Yamada, I., Ishiwara, H., Kamijo, E., Kawai, T., Allen, C.W. White, C.W., Elsevier, Amsterdam, pp.319326.
121. Bergonzo, P., Boyd, I.W., “Rapid Low Temperature Photo-Deposition of Silicon Dioxide Films using Excimer
Lamp VUV Light”, J. Appl. Phys., 1994, 76, pp.4372-4376.
122. Craciun, V., Elders, J., Gardiniers, J.G.E., Boyd, I.W., “Characteristics of High Quality ZnO Films deposited by
Pulsed Laser Deposition”, Appl. Phys. Lett., 1994, 65, pp.2963-2965.
123. Craciun, V., Reader, A.H., Vandenhoudt, D.E.W., Best, S.B., Hutton, R.S., Andrei, A., Boyd, I.W., “Low
Temperature UV Oxidation of SiGe for Preparation of Ge Nanocrystals in SiO 2”, Thin Solid Films, 1995, 255,
pp.290-294.
124. Tyrrell, G., York, T.H., Boyd, I.W., “Characterisation of Ionic Species Generated During Ablation of BiSrCaCuO
by Frequency-Doubled Nd:YAG Laser Radiation”, Appl. Surf. Sci., 1995,.86, pp.50-58.
125. King, S., Coccia, L., Boyd, I.W., “SEM Observations of YBCO on As-Received and Heat-treated MgO
Substrates”, Appl. Surf. Sci., 1995, 86, pp.134-139.
126. Craciun, V., Elders, J., Gardiniers, J.G.E., Geretovszky, Z., Boyd, I.W., “Growth of ZnO Thin Films on GaAs by
Pulsed Laser Deposition“, Thin Solid Films, 1995, 259, pp.1-4.
127. Naqvi, S.H.H., Boyd, I.W., The PbSrYCaCuO Superconducting System: Preparation and Characteristics, J. Mat.
Sci. & Eng., 1995, B33, pp.67-74..
128. Amirhaghi, S., Li, Y.H., Kilner, J.A., Boyd, I.W., "Growth of Pure and Doped Cerium Oxide Thin Film Bi-Layers
by PLD", J. Mat. Sci & Eng., 1995, B34, pp.192-198.
129. Boyd, I.W., Zhang, J-Y., Bergonzo, P., “New Excimer Ultraviolet Sources for Photo-Assisted Deposition of Thin
Films: An Alternative to Excimer Laser-Induced Deposition”, SPIE, 1995, 2043, pp.290-301.
130. Craciun, V., Amirhaghi, S., Craciun, D., Elders, J., Gardiniers, J.G.E., Boyd, I.W., “Effects of laser wavelength
and fluence on the growth of ZnO thin films by Pulsed Laser Deposition”, Appl. Surf. Sci., 1995, 86, pp.99-106.
131. Boyd, I.W., “ULSI Dielectrics: Low Temperature Silicon Dioxides“ Materials Chemistry & Physics, 1995, 41,
pp.266-274.
132. Lynch, S., O’Connor, G., Crean, G., Zhang, J-Y., Geretovszky, Z., Bergonzo, P., Boyd, I.W., “Characterisation of
Ultrathin Excimer Lamp CVD Oxynitride Films“, SPIE, 1995, 2403, pp.302-310.
133. Boyd, I.W., “Thin Film Growth by PLD”, Ceramics International, 1996, 22, pp.429-424.
134. King, S., Wilby, M.R., Boyd, I.W., “Evolution of the Morphology of Annealed, Bulk MgO (100) Substrate
Surfaces”, Mat. Sci & Eng., 1996, B37, pp.162-167.
135. Zhang, J.-Y., Esrom, H., Boyd, I.W., “Decomposition Mechanisms of Thin Palladium Acetate Film with Excimer
UV Radiation”, Appl. Surf. Sci., 1996, 96-98, pp.399-404.
136. King, S., Gardiniers, J.G.E., Boyd, I.W., “Pulsed Laser Deposited ZnO for Device Applications”, Appl. Surf.
Sci., 1996, 96-98, pp.811-818.
137. Coccia, L.G., Tyrrell, G.T., Kilner, J.A., Waller, D., Chater, R.J., Boyd, I.W., “Pulsed Laser Deposition of Novel
Materials for Thin Film Solid Oxide Fuel Cell Applications: CeGdO, LaSrCoO, and LaSrCoFeO”, Appl. Surf.
Sci., 1996, 96-98, pp.795-801.
138. Tyrrell, G.C., York, T.H., Coccia, L.G., Boyd, I.W., “Kinetic Energy Distributions of Ions Ejected During Laser
Ablation of Lead Zirconate Titanate and their Correlation to Deposition of Ferroelectric Thin Films”, Appl. Surf.
Sci., 1996, 96-98, pp.769-774.
139. Boyd, I.W., “Dielectric Photoformation on Si and SiGe”, in Advances in Rapid Thermal & Integrated
Processing, 1996, Ed., Roozeboom, F., Kluwer, Dordrecht, Chapter 9, pp.235-264.
140. Zhang, J.-Y., Boyd, I.W., “Investigation of High Efficient Excimer UV Sources from a Dielectric Barrier
Discharge in Rare Gas/Halogen Sources”, J. Appl. Phys., 1996, 80, pp.633-638.
141. Tyrrell, G.C., Coccia, L.G., York, T.H., Boyd, I.W., “Energy-dispersive Mass Spectrometry of High Energy Ions
Generated During KrF and Frequency-doubled Nd:YAG Laser Ablation of Metals”, Appl. Surf. Sci., 1996, 9698, pp.227-232.
142. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, W., “Transport Properties and Giant Magnetoresistance Behaviour in Novel La-Nd-Sr-Mn-O Films”, Appl. Phys. Lett., 1996, 69, pp.1154-1156.
143. Craciun, V., Boulmer-Leborgne, C., Nicholls, E.J., Boyd, I.W., “Light Emission from Ge Nanoparticles formed
by UV Assisted Oxidation of SiGe”, Appl. Phys. Lett., 1996, 69, pp.1506-1508.
144. Zhang, J.-Y., Boyd, I.W., Esrom, H., “ Surface Modification of Polyethyleneterephthalate with Excimer UV
Radiation”, Surface & Interface Analysis, 1996, 24, pp.718-722.
145. Zhang, J.-Y. Boyd, I.W., “Low Temperature Photo-Oxidation of Silicon Using Deep UV Radiation”, Electron.
Lett., 1996, 32, pp.2097-2098.
146. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, W., “Effect of Trivalent Ion Composition on the
Magnetoresistance Behaviour of LaNdSrMnO Films”, Appl. Phys. Lett., 1996, 69, pp.3599-3601.
147. Zhang, W., Boyd, I. W., Elliott, M., Herrenden-Harkerand, W., “The Effect of Oxygen Content on the
Magnetoresistive Behaviour in LaCaMnO Films Grown on Si”, Appl. Phys. Lett., 1996, 69, pp.3929-3931.
148. Boyd, I.W., Zhang, J.-Y., “New Large Area Ultraviolet Lamp Sources and their Applications“, Nucl. Inst. &
Meth. in Phys. Res., B, 1997, 121, pp.349-356.
149. Boyd, I.W., “UV Induced Mechanisms in Oxide Formation“, Appl. Surf. Sci., 1997, 109/110, pp.538-543.
150. Zhang, J.-Y., King, S.L., Boyd, I.W., Fang, Q., “VUV Light-Induced Decomposition of Palladium Acetate Films
for Electroless Copper Plating”, Appl. Surf. Sci., 1997, 109/110, pp.487-492.
151. Zhang, J.-Y., Boyd, I.W., Esrom, H.,L., “UV Intensity Measurement for a Novel 222nm Excimer Lamp Using
Chemical Actinometer”, Appl. Surf. Sci., 1997, 109/110, pp.482-486.
152. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, W., “Growth of Giant Metallic Granular Co-Ag Films
with Pulsed Laser Deposition”, J. Magnetism & Magnetic Materials, 1997, 165, pp.330-333.
153. Zhang, W., Boyd, I.W., Cohen, N.S., Bui, Q.-T., Pankhurst, Q.A., “Giant Magnetoresistance Behaviour in
LaSrMnO Films on Si Grown by Pulsed Laser Deposition”, Appl. Surf. Sci., 1997, 109-110, pp.350-353.
154. Zhang, J.-Y., Boyd, I.W., “Photo-Induced Deposition of Low Dielectric Constant Polyimide Film for Interlayer
Applications”, Electronics Letters, 1997, 33, pp.911-912.
155. Coccia, L.G., Tyrrell, G., Boyd, I.W.,, “Gas Phase Reactions During Reactive Laser Ablation of Ti and Si in N 2
and O2 Rarified Atmospheres Analysed Using EDMS”, Appl. Surf. Sci., 1997, 109-110, pp.413-418.
156. Zhang, J.-Y., Boyd, I.W., Esrom, H., “Excimer Laser Induced Surface Activation of Alumina for Electroless
Metal Deposition”, Appl. Surf. Sci., 1997, 109-110, pp.253-258.
157. Zhang, W., Boyd, I.W., Cohen, N.S., Bui, Q.-T., Pankhurst, Q.A., Elliott, M., Herrenden-Harkerand, W., “Phase
Segregation and GMR in As-deposited Co-Ag Films”, J. Appl. Phys, 1997, 81, pp.5211-5213.
158. Zhang, J.-Y., Boyd, I.W., “Photo-Induced Decomposition of Palladium Metalorganic Films for Electroless
Copper Plating”, J. Mat. Sci. Lett., 1997, 16, pp.996-998.
159. Craciun, V., Craciun, D., Bunescu, M.C., Dabu, R., Boyd, I.W., “Growth of Highly Transparent Oxide Layers by
PLD: Reduction of Droplet Density”, Appl. Surf. Sci., 1997, 109-110, pp.354-358.
160. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, W., “Giant Magnetoresistance in In-situ LaSrMnO
Films Grown on Si Substrates by PLD”, Appl. Surf. Sci., 1997, 110, pp.350-353.
161. Zhang, J.-Y., Boyd, I.W., “Photo-Decomposition of Thin Palladium Acetate Films with 126nm Radiation”, Appl.
Phys. A, 1997, 65, pp.379-382
162. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, W., “Enhanced Magnetoresistance in LaCaMnO Films
on Si Substrates using YBaCuO/CeO2 Heterostructures”, Physica C, 1997, 282-287, pp.1231-1232.
163. Zhang, J.-Y., Boyd, I.W., “Low Temperature Photo-oxidation of Si using a Xenon Excimer Lamp”, Appl. Phys.
Lett., 1997, 71, pp.2964-2966.
164. Boyd, I.W., Zhang, J.-Y., “Low Temperature Si Oxidation with Excimer Lamp Sources”, in Rapid Thermal and
Integrated Processing VI, 1997, Eds., Riley, T.J., Gelpey, J.C., Roozeboom, F., Saito, S., MRS, Pittsburgh,
pp.343-354.
165. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, W., “The Effects of Deposition Temperature on MR
Behaviour in LaCaMnO Films”, J. Magnetism & Magnetic Materials, 1997, 165, pp.540-544.
166. Craciun, V., Boyd, I.W., Andreazza, P., Boulmer-Leborgne, C., “Stress Effects Induced in SiGe Strained Layers
by Low Temperature Ultraviolet-Assisted Oxidation, J. Appl. Phys., 1998, 83, pp.1770-1772.
167. Craciun, V., Hutton, B., Williams, D.E., Boyd, I.W., “Low Temperature VUV-Assisted Oxidation of Ge”,
Electronics Letters, 1998, 34, pp.71-72.
168. Zhang, J.-Y., Bie, L.-J., Boyd, I.W., “Formation of High Quality Tantalum Oxide Thin Films at 400˚ C by 172nm
Radiation”, Jpn. J. Appl. Phys., 1998, 37, L27-29.
169. Zhang, J.-Y., Boyd, I.W., “Efficient XeI Excimer Ultraviolet Sources from a Dielectric Barrier Discharge”, J.
Appl. Phys., 1998, 84, pp.1174-1178.
170. Zhang, J.-Y., Boyd, I.W., “ Investigations of Photo-Induced decomposition of Palladium Acetate for Electroless
Plating”, Thin Solid Films, 1998, 318, pp.234-238.
171. Zhang, J.-Y., Bie, Li-J., Boyd, I.W., Dusastre, V., “Thin Tantalum Oxide Films Prepared by 172nm Excimer
Lamp Irradiation Using Sol-Gel Method”, Thin Solid Films, 1998, 318, pp.252-256.
172. Craciun, V., Craciun, D., Boyd, I.W., “Low Temperature Vacuum Ultraviolet Annealing of ZrO 2 Optical
Coatings Grown by Laser Ablation”, Electronics Letters, 1998, 34, pp.1527-1528.
173. Zhang, J.-Y., Boyd, I.W., “UV Light-Induced Deposition of Low Dielectric Constant Organic Polymer for
Interlayer Dielectrics”, Optical Materials, 1998, 9, pp.251-254.
174. Boyd, I.W., Zhang, W., “Growth of Perovskite Manganite Oxide Thin Films by PLD”, Appl. Surf. Sci., 1998,
127-129, pp.410-417.
175. Zhang, J.-Y., Boyd, I.W., Draper, S., “Excimer Lamp-Induced Decomposition of Palladium Metalorganic Films
for Electroless Copper Plating”, Surface & Coatings Technology, 1998, 100-101, pp.469-473.
176. Craciun, V., Zhang, J-Y, Boyd, I.W., “Challenges in the Oxidation of Strained SiGe Layers”, in Fundamental
Aspects of Ultrathin Dielectrics on Si-based Devices”, 1998, Ed., E. Garfunkle, Kluwer, Dordrecht, pp.461475.
177. Zhang, J.-Y., Lim, B., Boyd, I.W., “Thin Tantalum Pentoxide Films Deposited by Photo-induced CVD”, Thin
Solid Films, 1998, 336, pp.340-343.
178. Craciun, V., Craciun, D., Bunescu, M.C., Vasile, E., Ioncea, A., Dabu, R., Boyd, I.W., “Mechanisms of Droplet
Formation in Pulsed Laser Growth of Thin Oxide Films, SPIE, 1998, 3405, pp.225-232.
179. Zhang, J.Y., Boyd, I.W., “Metal Oxide Semiconductor Characteristics of Tantalum Oxide Thin Films Grown by
172nm Radiation”, J. Mat. Sci. Lett., 1998, 17, pp.1507-1509.
180. Zhang, W., Wang, X.R., Boyd, I.W., “Incongruent Transfer Related to Surface Segregation in Pulsed Laser
Deposited La-Ca-Mn-O Films”, Appl. Phys. Lett., 1998, 73, pp.2745-2747.
181. Craciun, D., Craciun, V., Martin, C., Mihailescu, I.N., Vasile, E., Bunescu, M.C., Ioncea, A., Boyd, I.W.,
“Microstructure of Hydroxyapatite Thin Layers Grown by Pulsed Laser Deposition Technique”, SPIE, 1998,
3405, pp.272-277.
182. Zhang, J.-Y., Boyd, I.W., Esrom, H., “Lamp Induced Forward Transfer: A New Approach for Deposition of
Metal Films”, J. Mat. Sci. Lett., 1998, 17, pp.2037-2040.
183. Zhang, W., Wang, W., Elliott, M., Boyd, I.W., "Stress Effects and Enhanced Magnetoresistance in CeO2 Buffered
LaCaMnO Multilayers", Phys. Rev. B, 1998, 58, pp.14143-14146.
184. Zhang, J.-Y., Lim, B., Boyd, I.W., Dusastre, V., 'Characteristics of High Quality Tantalum Oxide Films
Deposited by Photo-Induced Chemical Vapour Deposition”, Appl. Phys. Lett., 1998, 73, pp.2299-2301.
185. Zhang, J.-Y., Fang, Q., Boyd, I.W., “Growth of Tantalum Pentoxide Film by Pulsed Laser Deposition”, Appl.
Surf. Sci., 1999, 138-139, pp.320-324.
186. Geretovszky, Z., Boyd, I.W., “Kinetic Study of 222nm Excimer Lamp Induced Decomposition of Palladium
Acetate Films”, Appl. Surf. Sci., 1999, 138-139, pp.401-407.
187. Craciun, V., Craciun, D., Bunescu, M.C., Boyd, I.W., “Scanning Electron Microscopy Investigations of Surface
Morphology of Laser Ablated Targets”, J. Phys. D: Appl. Phys., 1999, 32, pp.1306-1312.
188. Zhang, W., Wang, X., Elliott, M., Herrenden-Harkerand, W., Boyd, I.W., “Preparation Dependence of the
Magnetic Behaviour in La-Ca-Mn-O Films”, Appl. Surf. Sci., 1999, 138-139, pp.569-573.
189. Zhang, W., Wang, X., Boyd, I.W., “Enhanced Magnetoresistance Behaviour in CeO2 Buffered LaCaMnO Films
on Si”, Appl. Surf. Sci., 1999, 138-139, pp.563-568.
190. Craciun, V., Craciun, D., Perriere, J., Boyd, I.W., “Droplet Formation During Extended Time Pulsed Laser
Deposition of La0.5Sr0.5CoO3 Thin Layers”, J. Appl. Phys., 1999, 85, pp.3310-3313.
191. Zhang, J.-Y., Boyd, I.W., “Characterisation of Lead Zirconate Titanate (PZT) Films Formed by PhotoDecomposition of Metal Organic Polymer”, Jpn. J. Appl. Phys., 1999, 38, pp.L393-L394.
192. Craciun, V., Boyd, I.W., Craciun, D., Andreazza, P., Perriere, J., “Vacuum Ultraviolet Annealing of
Hydroxyapatite Films Grown by Pulsed Laser Deposition”, J. Appl. Phys., 1999, 85, pp.8410-8414.
193. Craciun, V., Boyd, I.W., Hutton, B., Williams, D., “Characteristics of Dielectric Layers Grown on Ge by Low
Temperature Vacuum Ultraviolet-assisted Oxidation”, Appl. Phys. Lett., 1999, 75, pp.1261-1263.
194. Zhang, J.-Y., Boyd, I.W., Draper, S., “Excimer Lamp-Induced Decomposition of Platinum Acetylacetonate Films
for Electroless Copper Plating”, Solid State Electronics, 1999, 43, pp.1107-1111.
195. Craciun, V., Boyd, I.W., Hutton, B., Nicholls, E.J., Perriere, J., "Characteristics of Dielectric Layers formed by
Low Temperature Vacuum Ultraviolet Assisted Oxidation of SiGe Layers", J. Mater. Research, 1999, 14,
pp.3525-3529.
196. Zhang, J.-Y., Esrom, H., Boyd, I.W., “UV Intensity Measurement of 308nm Excimer Lamp Using Chemical
Actinometer”, Appl. Surf. Sci., 1999, 138-139, pp.315-319.
197. Mooney, M.B., Hurley, P.K., O’Sullivan, B.J., Beechinor, J.T., Zhang, J.-Y., Boyd, I.W., Kelly, P.V., Sénateur,
J.P., Crean, G.M., Jimenez, C., Paillous, M., “Characteristics of Ta 2O5 Dielectric Films Deposited on Si by
Excimer Lamp Assisted Photo-induced CVD Using an Injection Liquid Source”, Microelectronic Engineering,
1999, 48, pp.283-286.
198. Zhang, J.-Y., Boyd, I.W., Dusastre, V., Williams, D.E., “Ultraviolet Annealing of Tantalum Oxide Films Grown
by Photo-induced Chemical Vapour Deposition”, J. Phys. D: Appl. Phys., 1999, 32, L91-L95.
199. Shimizu-Iwayama, T., Hole, D.E., Boyd, I.W., “Mechanism of Photoluminescence of Si Nanocrystals in SiO2
Fabricated by Ion Implantation: The Role of Cluster-Cluster Interactions and Oxygen”, J. Phys.: Condensed
Matter., 1999, 11, pp.6595-6604.
200. Craciun, V., Craciun, D. Andreazza, P., Perriere, J., Boyd, I.W., “Vacuum Ultraviolet Annealing of Thin Films
Grown by Pulsed Laser Deposition”, Appl. Surf. Sci., 1999, 138-139, pp.587-592.
201. Zhang, J.-Y., Boyd, I.W., Mooney, M.B., Hurley, P.K., O’Sullivan, B.J., Beechinor, J.T., Kelly, P.V., Crean,
G.M., Sénateur, J.P., “Photo-Induced CVD of Tantalum Pentoxide Dielectric Films Using an Injection Liquid
Source”, in Ultrathin SiO2 and High k Materials for ULSI Gate Dielectrics, 1999, Eds., Huff, H.R., Richter,
C.A., Green, M.L., Lucovsky, G., Hattori, T. MRS, Warrendale, pp.397-402.
202. Zhang, J.-Y., Boyd, I.W., “Vacuum Ultraviolet Annealing of Tantalum Oxide Films Deposited at Room
Temperature by Photo-Induced CVD”, in Ultrathin SiO2 and High k Materials for ULSI Gate Dielectrics,
1999, Eds., Huff, H.R., Richter, C.A., Green, M.L., Lucovsky, G., Hattori, T. MRS, Warrendale, pp.494 - 500.
203. Beechinor, J.T., Mooney, M.B., Kelly, P.V., Crean, G.M., Zhang, J.-Y., Boyd, I.W., Paillous, M., Jimenez, C.,
Sénateur, J.P., “Characterisation of Process Variables for Ultraviolet Injection Liquid Source Chemical Vapour
Deposition (UVILS-CVD) of Tantalum Pentoxide Films”, in Ultrathin SiO2 and High k Materials for ULSI
Gate Dielectrics, 1999, Eds., Huff, H.R., Richter, C.A., Green, M.L., Lucovsky, G., Hattori, T. MRS,
Warrendale, pp.509 - 514.
204. Sharma, S., Keast, V.J., Iwayama, T.S., Boyd, I.W., Humphreys, C.J., “Characterisation of silicon nanocrystals in
silica and correlation with luminescence, in “Electron Microscopy and Analysis”, 1999, Ed., C.J. Kiely, IoP
Conf Series Vol 161 pp589-592.
205. Boyd, I.W., Zhang, J.-Y., “Photo-induced Growth of Dielectrics with Excimer Lamps”, SPIE, 2000, 4070,
pp.275-283.
206. Zhang, J.-Y., Boyd, I.W., “UV Annealing of Thin Films Grown by PLD”, Appl. Surf. Sci., 2000, 154/155, pp.1721.
207. Zhang, J.-Y., Lim, B., Boyd, I.W., “Deposition and Annealing of Ta2O5 Films Using 172nm Excimer Lamp”,
Appl. Surf. Sci., 2000, 154-155, pp.382-386.
208. Kaliwoh, N., Zhang, J.-Y., Boyd, I.W., “Titanium Dioxide Films prepared by Photo-Induced Sol-Gel Processing
using 172nm Excimer Lamps”, Surf. & Coat. Technol., 2000, 125, pp.424-427.
209. Boyd, I.W., Zhang, J.-Y., “Low Temperature Photoformation of Tantalum Oxide”, Microelectronics Reliability,
2000, 40, pp.649-655.
210. Zhang, J.-Y., Boyd, I.W., “Pulsed Laser Deposition of Ta2O5 Film”, Appl. Phys. A, 2000, 70, pp.657-661.
211. Zhang, J.-Y., Boyd, I.W., “Multi-Wavelength Excimer Ultraviolet Sources from a Mixture of Krypton and Iodine
in a Dielectric Barrier Discharge”, Appl. Phys. B, 2000, 71, pp.177-179.
212. Zhang, J.-Y., Boyd, I.W., Mooney, M.B., Hurley, P.K., Beechinor, J.T., O’Sullivan, B.J., Kelly, P.V., Crean,
G.M., Sénateur, J.P., Jimenez, C., Paillous, M., “Thin Ta 2O5 Films Deposited by Photo-Induced Chemical
Vapour Deposition Using an Injection Liquid Source”, Appl. Phys. A, 2000, 70, pp.647-649.
213. Zhang, J.-Y., Boyd, I.W., “Ultrathin High Quality Tantalum Pentoxide Films Grown by Photo-induced Chemical
Vapour Deposition”, Appl. Phys. Lett., 2000, 77, pp.3574-3576.
214. Iwayama T.S., Hole D.E., Boyd I.W., “Characteristic Photoluminescence Band in Si+-Implanted SiO2 Grown on
Si Wafer”, Microelectronics Reliability, 2000, 40, pp.849-854.
215. Waller D., Coccia L.G., Kilner J.A., Boyd I.W., “The Effect of Pulse Duration and Oxygen Partial Pressure on
La0.7Sr0.3CoO3-∂ and La0.7Sr0.3Co0.2Fe0.8O3-∂ Films Prepared by Laser Ablation”, Solid State Ionics, 2000,
134, pp.119-125.
216. Kaliwoh, N., Zhang, J.Y., Boyd, I.W., "Photo-Induced Preparation of (Ta2O5)1-x(TiO2)x Dielectric Thin Films
by Photo-Induced Sol-Gel Processing Using Xenon Excimer Lamp", Appl. Surf. Sci., 2000, 168, pp.13-16.
217. Kogelschatz, U., Esrom, H., Zhang, J.-Y., Boyd, I.W., High Intensity Sources of Incoherent UV and VUV
Excimer Radiation for Low Temperature Materials Processing, Appl. Surf. Sci., 2000, 168, pp.29-36.
218. Zhang, J.Y., Boyd, I.W., "Thin Tantalum and Tantalum Oxide Films Grown by Pulsed Laser Deposition", Appl.
Surf. Sci., 2000, 168, pp.234-238.
219. Kaliwoh, N., Zhang, J.Y., Boyd, I.W., "Ultrathin Silicon Dioxide Films Grown by Photo-Oxidation of Silicon
Using 172 nm Excimer Lamps", Appl. Surf. Sci., 2000, 168, pp.288-291.
220. Zhang, J.Y., Boyd, I.W., "Lifetime Investigation of Excimer UV Sources", Appl. Surf. Sci., 2000, 168, pp.296299.
221. Zhang, J.Y., Hopp, B., Geretovszky, Z., Boyd, I.W., “Photo-Deposition of Tantalum Pentoxide Film Using 222
nm Excimer Lamps", Appl. Surf. Sci., 2000, 168, pp.307-311.
222. Zhang, J.Y., Boyd, I.W., "Formation of Silicon Dioxide Layers During UV Annealing of Tantalum Pentoxide
Film", Appl. Surf. Sci., 2000, 168, pp.312-315.
223. Zhang, J.Y., Boyd, I.W., "Low Dielectric Constant Porous Silica Films Formed by Photo-Induced Sol-gel
Processing”, Materials Science in Semiconductor Processing, 2000, 3, pp.345-349.
224. Kelly, P.V., Mooney, M.B., Beechinor, J.T., O'Sullivan, B.J., Crean, G.M., Zhang, J.-Y., Boyd, I.W., Paillous,
M., Sénateur, J.P., "Ultraviolet assisted injection liquid source chemical vapor deposition (UVILS-CVD) of
tantalum pentoxide" (invited paper) Advanced Materials for Optics and Electronics, 2000, 10, pp.115-122.
225. Boyd, I.W., Zhang, J.-Y., "Photo-induced large area growth of dielectrics with excimer lamps" in “Laser-Solid
Interactions for Materials Processing,”, 2001, Eds., D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara, X. Xi, .
MRS, Warrendale, USA.
226. Zhang, J.-Y., Boyd, I.W., "Photo-induced growth of low dielectric constant porous silica film at room
temperature", in “Laser-Solid Interactions for Materials Processing,”, 2001, Eds., D. Kumar, D.P. Norton,
C.B. Lee, K. Ebihara, X. Xi, . MRS, Warrendale, USA.
227. Shimizu-lwayama, T., Hama, T., Hole, D.E., Boyd, I.W., “Characteristic photoluminescence properties of Si
nanocrystals in SiO2 fabricated by ion implantation and annealing”. Solid-State Electronics, 2001, 45(8),
pp.1487-1494.
228. Yu, J.J., Zhang, J.Y., Boyd, I.W., Lu, Y.F., “Excimer Laser Induced Micropatterning of Silicon Dioxide on
Silicon Substrates”, Appl. Phys. A, 2001, 72, pp.35-39.
229. Zhang, J.Y., Dusastre, V., Boyd, I.W., "Ultraviolet Annealing of Tantalum Oxide Films Deposited by Photo-CVD
using 172 nm Excimer Lamp", Mat. Sci. in Semiconductor Processing, 2001, 4, pp.313-317.
230. Boyd, I.W., Zhang, J.Y., , "Photo-induced Growth of Dielectrics with Excimer Lamps” Solid State Electronics,
2001, 45, pp.1413-1431.
231. Yu, J.J., Fang, Q., Boyd, I.W., “Photoformation of Zirconium Oxide at Low Temperatures”, J. Phys. IV (France)
2001, 11, pp.289-293.
232. Zhang, J.-Y., Fang, Q., Wu, J.X., Xu, C.Y., O’Sullivan, B.J., Hurley, P.K., Leedham, T.L., Audier, M.A.,
Sénateur, J.P., Boyd, I.W., “Photo-CVD Deposited TiO2 Films Studied by Raman and XPS Spectroscopy”, J.
Phys. IV (France), 2001, 11, pp.289-293.
233. Fang, Q., Zhang, J.-Y., Wu, J.X., O’Sullivan, B.J., Hurley, P.K., Leedham, T.L., Audier, M.A., Sénateur, J.P.,
Boyd, I.W., “XPS Investigation of UV Annealed Ultrathin TiO2 Films on Silicon”, J. Phys. IV (France), 2001,
11, pp.301-305.
234. Yu, J.J., Boyd, I.W., “Structural and Electrical Characteristics of Zirconium Oxide layers Derived by PhotoAssisted Sol Gel Processing”, Appl. Phys., 2001, 74, pp.143-146.
235. O’Sullivan, B.J., O’Connor, E., Howley, R., Hurley, P.K., Zhang, J.-Y., Boyd, I.W., Dubourdieu, C., Audier,
M.A., Sénateur, J.P., Leedham, T.L., Semmache, B., “Effects of Active Nitrogen Surface Preparation on the
Properties of High Permittivity Films Deposited by UV-Assisted CVD”, J. Phys. IV (France), 2001, 11, 261265.
236. Yu, J.J., Zhang, J.Y., Boyd, I.W, Lu, Y.F., "Laser-assisted mechanical texturing of magnetic media" Appl. Phys.
A, 2001, 72, pp.687-690.
237. O’Sullivan, B.J., O’Connor, E., Howley, R., Hurley, P.K., Fang, Q., Zhang, J.Y., Boyd, I.W, Dubourdieu, C.,
Audier, M., Sénateur, J.P., “Effect of substrate nitridation on the electrical properties followed of high-k films” J.
Phys. IV France, 2001, 11, pp.261-265.
238. Fang, Q., Zhang, J.Y., Boyd I.W., Sénateur, J.P., O’Sullivan, B.J., Hurley, P.K., Kelly, P.V., “Photo-CVD
deposited TiO2 films studied by Raman and XPS spectroscopy" J. Phys. IV France, 2001, 11, pp.295-299.
239. Fang, Q., Zhang, J.Y., Boyd I.W., O’Sullivan, B.J., Hurley, P.K., Kelly, P.V., J-P Sénateur, “XPS investigation of
UV-annealed ultrathin Ta2O5 films on silicon” J. Phys. IV France, 2001, 11, pp.301-305.
240. Craciun, V., Lambers, E.S., Singh, R.K., Boyd, I.W., “X-Ray Photoelectron Spectroscopy Investigations of
Ultrathin Layers Grown by Ultraviolet Assisted Oxidation of SiGe”, Appl. Surf. Sci., 2002, 186, pp.237-240.
241. Iwayama, T.S., Hama, T., Hole, D.E., Boyd, I.W., “Optical and structural properties of encapsulated Si
nanocrystals formed in SiO2 by ion implantation”, Surface & Coatings Technology, 2002, 158-159, pp.712-716.
242. Kaliwoh, N., Zhang, J.Y., Boyd, I.W., “Characterisation of TiO2 deposited by photo-induced chemical vapour
deposition”. Appl. Surf. Sci., 2002, 186, pp.241-245.
243. Zhang, J.-Y., Boyd, I.W., “Rapid Photo-oxidation of Silicon at Room Temperature Using 126nm Vacuum
Ultraviolet Lamp”, Appl. Surf. Sci., 2002, 186, pp.64-68.
244. Craciun, V., Singh, R.K., Boyd, I.W., “Photonic effects during low temperature ultraviolet-assisted oxidation of
SiGe”, J. of Electronic Materials, 2002, 31, pp.1325-1320.
245. Zhang, J.Y., Boyd, I.W., “Structural and Electrical Properties of Tantalum Oxide Films Grown by Photo-Assisted
Pulsed Laser Deposition”, Appl. Surf. Sci, 2002, 186, pp.40-44.
246. Zhang, J.Y., Windall, G., Boyd, I.W., “UV Curing of optical Fibre Coatings Using Excimer Lamps”, Appl. Surf.
Sci, 2002, 186, pp.568-572.
247. Yu, J.J., Boyd, I.W., “Structural and Electrical Characteristics of Zirconium Oxide layers Derived by PhotoAssisted Sol Gel Processing”, Appl. Phys., 2002, 74, pp.143-146.
248. Yu, J.J., Zhang, J.-Y., Boyd, I.W., “UV Annealing of Ultrathin Tantalum Oxide Films”, Appl. Surf. Sci., 2002,
186, pp.57-63.
249. Yu, J.J., Zhang, J.-Y., Boyd, I.W., “Formation of Stable Zirconium Oxide on Silicon by Photo-Assisted Sol Gel
Processing”, Appl. Surf. Sci., 2002, 186, pp.190-194.
250. Kaliwoh, N., Zhang, J.-Y., and Boyd, I.W., “(Ta2O5)1-x(TiO2)x deposited by photo-induced CVD using 222 nm
excimer lamps”, Appl. Surf. Sci, 2002, 186, pp.246-250.
251. Zhang, J.Y., Boyd, I.W., O’Sullivan, B.J., Hurley, P.K., Kelly, P.V., Sénateur, J.-P., “Nanocrystalline TiO2 Films
Studied by Optical, XRD and FTIR Spectroscopy”, J. Non-Crystalline Solids, 2002, 303, pp.134-138.
252. Hopp, B., Geretovszky Z., Bertóti, I., Boyd I.W., Comparative tensile strength study of the adhesion improvement
of polytetrafluoroethylene by UV photon assisted surface processing, Appl. Surf. Sci,. 2002, 186, pp.80-85.
253. Yu, J.J., Boyd, I.W., “ZrO2 films deposited by photo-CVD at low temperatures”, Appl. Phys A., 2002, 75,
pp.489-492.
254. Geretovszky, Z., B. Hopp, B., Bertóti, I., Boyd I.W., Photodegradation of polycarbonate under narrow band
irradiation at 172 nm, Appl. Surf. Sci., 2002, 186, pp.85-90.
255. Chen, W., Zhang, J.Y., Di, Y., Boyd, I.W., “Photo-chemical production of gold nanoparticles in monolithic
porous silica by using a novel excimer ultraviolet source”, Inorganic Chemistry Communications, 2003, 6,
pp.950-952.
256. Fang, Q., Zhang, J.Y, Wang, Z.M., Wu, J.X., O'Sullivan, B.J., Hurley, R.K., Leedham, T.L., Davies, H., Audier,
M.A., Jimenez, C., Sénateur, J.P., Boyd, I.W., “Characterisation of HfO2 deposited by photo-induced chemical
vapour deposition”, Thin Solid Films, 2003, 427, pp.391-396.
257. Boyd, I.W., Zhang, J.Y., Kogelschatz, U., “Development and applications of UV excimer lamps”, in PhotoExcited Processes, Diagnostics, and Applications: Fundamentals and Advanced Topics”, Ed., A. Peled,
2003, pp.161-199.
258. Fang, Q., Zhang, J.-Y., and Boyd I.W., " Rapid oxidation of silicon using 126nm excimer radiation at low
pressure" Appl. Surf. Sci., 2003, 208/209, pp.369-373.
259. Yu, J.J., Boyd, I.W., “X-ray diffraction and electrical characterization of photo-CVD zirconium oxide layers”.
Appl. Surf. Sci., 2003, 208-209, pp.374-377.
260. Fang, Q., Zhang, J.-Y., Wang, Z.M., Wu, J.X., O’Sullivan, B.J., Hurley, P.K., Leedham, T.L., Davies, H.,
Audier, M.A., Jimenez, C., Sénateur, J.P., Boyd I.W., "Interface of tantalum oxide films on silicon by UV
annealing at low temperature", Thin Solid Films, 2003, 428, pp.248-252.
261. Fang, Q., Zhang, J.-Y., Wang, Z.M., Wu, J.X., O'Sullivan, B.J., Hurley, P.K., Leedham, T.L., Audier, M.A.,
Sénateur, J.P., Boyd I.W., " Investigation of Ti doped HfO2 thin films deposited by photo-CVD" Thin Solid
Films, 2003, 428, 263-268.
262. Yu, J.J., Fang, Q., Zhang, J.-Y., Wang, Z.M., Boyd I.W, " Hafnium oxide layers derived by photo-assistted SolGel processing" Appl. Surf. Sci., 2003, 208, pp.676-681.
263. Fang, Q., Zhang, J.-Y., Wang, Z.M., He, G., Yu, J., Boyd, I.W.,, High-k dielectrics by UV photo-assisted
chemical vapour deposition”, Microelectronic Engineering, 2003, 66, pp.621-630.
264. Fang, Q., Meier, M., Yu, J.J., Wang, Z.M., Zhang, J.Y., Wu, J.X., Kenyon, A., Hoffmann, P., "FTIR and XPS
investigation of Er-doped SiO2-TiO2 films", Materials Science and Engineering B: Solid State Materials for
Advanced Technology, 2003, 105, pp.208-212.
265. Zhang, J.-Y., Fang, Q., Kenyon, A.J., Boyd I.W., Visible photoluminescence from nanocrystalline Ge grown at
room temperatures by photo-oxidation of SiGe using a 126nm lamp" Appl. Surf. Sci., 2003, 208/209 pp.364-368.
266. Zhang, X.Y., Chen, W., Wang, Z.M., Zhang, J.Y., Boyd, I.W., “UV annealing of inorganic-organic composite
films prepared by sol-gel technique”, Thin Solid Films, 2004, 453/454, pp.59-62.
267. Wang, Z.M., Fang, Q., “Growth of titanium silicate thin films by photo-induced chemical vapour deposition”.
Thin Solid Films, 2004, 453/454, pp.167-171.
268. Yu, J.J., Boyd I.W. “Low temperature Si and SiGe oxidation through dielectric barrier discharges”. Thin Solid
Films, 2004, 453/454, pp.63-66.
269. Yu, J.J., Boyd I.W “Excimer UV-assisted preparation of zirconium silicate layers”. Thin Solid Films, 2004,
453/454, pp.215-218.
270. Bjeletich, P.J., Peterson, J.J., Cuadras, A., Fang, Q., Zhang, J.Y., Robinson, M., Boyd, I.W., Hunt, C.E.,
“Electrical characterization of photo-oxidized Si 1-x-yGexCy films”, Microelectronic Engineering, 2004, 72, pp.
218-222.
271. Geretovszky, Z., Szörényi, T., Stoquert, J.-P., Boyd, I. W. “Correlation of compositional and structural changes
during pulsed laser deposition of tantalum oxide films”. Thin Solid Films, 2004, 453/454, pp.245-250.
272. Fang, Q., He, G., Cai, W.P., Zhang, J.Y., Boyd, I. W., Palladium nanoparticles on silicon by photo-reduction
using 172 nm excimer UV lamps, Appl. Surf. Sci., 2004, 226, pp.7-11.
273. Wang, Z.M., Fang, Q., Zhang, J.Y., Wu, J.X., Di, Y., Chen, W., Chen, M.L., Boyd, I. W., “Growth of titanium
silicate thin films by photo-induced chemical vapor deposition”, Thin Solid Films, 2004, 453/54, pp.167-171.
274. Chen, W., Zhang, J.Y., Fang, Q., Hu, K.L., Boyd, I. W., “Surface modification of polyimide with excimer UV
radiation at wavelength of 126 nm”, Thin Solid Films, 2004, 453/454, pp.3-6.
275. Wang, Z.M., Fang, Q., Zhang, J.Y., Wu, J.X., Di, Y., Chen, W., Chen, M.L., Boyd, I.W., “Growth of titanium
silicate thin films by photo-induced chemical vapor deposition”, Thin Solid Films, 2004, 253/53, pp.167-171.
276. Yu, J. J., Boyd, I. W., Direct Si oxidation with fluorine incorporation using an argon excimer VUV source.
Physica Status Solidi A: Applications and Materials Science, 2005, 202, R98-R100.
277. Sun, F., Cai, W., Li, Y., Duan, G., Nichols, W.T., Liang, C., Koshizaki, N., Fang, Q., Boyd, I.W., “Laser
morphological manipulation of gold nanoparticles periodically arranged on solid supports”, Appl. Phys. B:
Lasers and Optics, 2005, 81, pp.765-768.
278. Yu, J. J., Boyd, I. W., Excimer VUV formation of erbium-doped silica layers. Physica Status Solidi A:
Applications and Materials Science, 2005, 202, R92-R94.
279. Li, Y., Cai, W., Duan, G., Sun, F., Cao, B., Lu, F., Fang, Q., Boyd, I.W., “Large-area In2O3 ordered pore arrays
and their photoluminescence properties”, Applied Physics A: Materials Science & Processing, 2005, 81,
pp.269-273.
280. Yu, J.J., Boyd, I. W., Strong erbium photoluminescence from erbium-doped silica layers prepared using excimer
VUV lamps, Electronics Letters, 2005, 41, 924-925.
281. Fang, Q., Liaw, I., Modreanu, M., Hurley, P. K., Boyd, I. W., Post deposition UV-induced O2 annealing of HfO2
thin films. Microelectronics Reliability, 2005, 45, pp.957-960.
282. Decams, J.M., Guillon, H., Jimenez, C., Audier, M., Sénateur, J.P., Dubourdieu, C., Cadix, O., O'Sullivan, B.J,,
Modreanu M., Hurley, P.K., Rushworth, S, Leedham, T.J., Davies, H., Fang, Q., Boyd, I.W., “Electrical
characterization of HfO2 films obtained by UV assisted injection MOCVD”, Microelectronics Reliability, 2005,
45, pp.929-932.
283. Shimizu-Iwayama, T., Hama, T., Hole, D.E., Boyd, I.W., “Enhancement of luminescence from encapsulated Si
nanocrystals in SiO2 with rapid thermal anneals”, Nucl. Inst. & Methods in Phys. Research Section B: Beam
Interactions with Materials and Atoms, 2005, 230, pp203-209.
284. Yu, J. J., Liaw, I. I. & Boyd, I. W. Direct nitridation of high-k metal oxide thin films using argon excimer sources.
Electronics Letters, 2005, 41, pp.1210-1211.
285. Durand, C., Vallee, C., Dubourdieu, C., Kahn, M., Derivaz, M., Blonkowski, S., Jalabert, D., Hollinger, P.,
Fang, Q., Boyd, I.W., ”Electrical property improvements of yttrium oxide-based metal-insulator-metal
capacitors”, Journal of Vacuum Science & Technology A, 2006, 24, pp459-466.
286. Yu, J. J., Boyd, I. W. “Nitridation and reoxidation of high-k metal oxide thin films using argon excimer sources”,
Physica Status Solidi A: Applications and Materials Science, 2006, 203, R9-R11.
287. Boyd, I.W., Liaw, Irving, “Development and application of UV excimer lamps from 354nm -126nm
”, SPIE,
2006, 6261, pp104
-120.
288. Iwayama, T.S. , Hama, T., Hole, D.E., Boyd, I.W., “Enhanced luminescence from encapsulated Si nanocrystals in
SiO2 with rapid thermal anneal”, Vacuum, 2006, 81, pp.179-185.
289. Dobb, H., Carroll, K., Webb D.J., Kallik, K., Komodromos, M., Themistos C., Peng, G.D., Argyros, A.,
Large, M.C.J., Van Eijkelenborg, M.A., Fang, Q., Boyd, I.W., “Grating based devices in polymer optical fibre”,
2006, SPIE, 6189
, pp1-12.
290. Boyd, I.W., Liaw, I.I., “ Development and application of UV excimer lamps from 354-126nm”, High-Power
Laser Ablation VI, Volume: 6261, 2006, pp. 26104-26104.
291. Yu, J.J., Boyd, I.W., “UV detection for excimer lamps using CVD diamond in various gaseous atmospheres”,
Diamond and Related Materials, 2007, 16, pp.494-497.
292. Chen, M., Zhang, X., Fang, Q., Zhang, J., Lin, Z., Boyd, I.W., “Deposition and growth kinetics of thin zirconium
dioxide by UVILS-CVD”, Appl. Surf. Sci., 2007, 253, pp.7942-7946.
293. Kalli, K., Dobb, H.L., Webb, D.J., Carroll, K., Komodromos, M., Themistos, C., Peng, G.D., Fang, Q.,
Boyd, I. W., “Electrically tunable Bragg gratings in single-mode polymer optical fiber”, Optics Letters, 2007, 32,
pp.214-216.
294. Liu, M., Zhu, L.Q., He, G., Wang, Z.M., Wu, J.X., Zhang, J.Y., Liaw, I., Fang, Q., Boyd, I.W., Hf1-xSixOy
dielectric films deposited by photo-induced chemical vapour deposition (UV-CVD)”, Appl. Surf. Sci., 2007, 253,
pp.7869-7873.
295. Iwayama, T.S., Hama, T., Hole, D.E., Boyd, I.W., “Control of embedded Si nanocrystals in SiO2 by rapid thermal
annealing and enhanced photoluminescence characterisation”, Surface & Coatings Technology, 2007, 201
pp.8490-8494.
296. Kalli, K., Dobb, H.L., Webb, D.J., Carroll, K., Thermistos, C., Komodromos, M., Peng, G.D., Fang, Q., Boyd,
I.W., “development of an electrically tuneable Bragg grating filter in polymer optical fibre operating at 1.55um”,
Measurement Science & Technology, 2007, 18, pp.3155-3164.
297. Wojdak, M., Liaw, I.I., Ahmad, I., Oton, C.J., Low, W.H., Kenyon, A.J., Boyd, I.W., “Si nanoclusters containing
nitrogen and sensitization of erbium luminescence in SiOx:Er”, Materials Science And Engineering B-Solid
State Materials For Advanced Technology, 2008, 146, pp.175-178.
Other Publications: Reviewed
1.
Boyd, I.W., "Argon Laser Oxidation of Silicon - The Importance of Enhanced Carrier Density Effects", CLEO
Digest, 1983, pp.40-42.
2.
Boggess, T.F., Moss, S.C., Boyd, I.W., Smirl, A.L., "Si Optical Zener Switch", CLEO/IQEC Digest, 1984,
pp.270.
3.
Boyd, I.W., Boggess, T.F., Moss, S.C., Smirl, A.L., "Morphological Changes Induced by 1 Micron Pico-second
Irradiation of Crystalline Silicon", CLEO/IQEC Digest, 1984, pp.114.
4.
Boyd, I.W., Smirl, A.L., Boggess, T.F., Moss, S.C., "Nonlinear Optical Limiting in GaAs", J. Optical
Society of America A, 1984, 1, 1297.
5.
Boggess,T.F., Smirl, A.L., Moss, S.C., Boyd, I.W., "Pulsewidth Dependence of Nonlinear Absorption of 1 µ m
Picosecond Pulses", J. Optical Society of America A, 1984, 1, 1299.
6.
Boyd, I.W., "Photon-Assisted Oxidation of Silicon", in "Laser-Assisted Modification and Synthesis of
Materials", 1985, ed., Metev, S., Sofia University Press, pp. 105-119.
7.
Boyd, I.W., "2-Photon Absorption Coefficient of GaAs", in "Properties of GaAs", 1986, EMIS Datareview 3,
INSPEC, 12.4.
8.
Boyd, I.W., "Oxidation Rates of Si Oxidised by Laser Based Methods" in "Properties of Silicon",1988,
Datareview 4, INSPEC, 16.2, pp. 480-481.
9.
Boyd, I.W., "Oxidation Reaction Mechanisms in Si", Properties of Silicon, 1988, EMIS, Datareview 4, INSPEC,
16.4, pp. 491-495.
EMIS
10. Boyd, I.W., "Ultrashort Laser Pulse Interactions with Si", Properties of Silicon, 1988, EMIS Datareview 4,
INSPEC, 24.1, pp. 887-891.
11. Tyrrell, G.C., Boyd, I.W., Jackman, R.B., "Ion Beam Enhanced Reactions at the Silicon-Bromine Interface:
Application to Electronic Materials Processing" (Extended abstract) Surface & Interface Analysis, 1990, 16, pp.
83-84.
12. Boyd, I.W., "Photo-Oxidation of GaAs", "Properties of GaAs":(2nd ed.) 1990, EMIS Datareview, INSPEC.
13. Boyd, I.W., "New Ultra-Violet Lamp Sources for Thin Film Deposition", CLEO/Pacific Rim’95 Digest, 1995,
pp. 131.
14. Boyd, I.W., “Pulsed Laser Deposition and Growth of Novel Oxide Thin Film Structures”, Proc. 12th Yokohama
21st Century Forum, 1996, ed., K. Kojima, pp.154-159.
15. Boyd, I.W., "Photo-Oxidation of GaAs", "Properties of GaAs":(3rd ed.) 1996, EMIS Datareview, INSPEC.
16. Zhang, J., Fang, Q., Esrom, H., Boyd, I.W., “Low Temperature Photo-Induced Metal Deposition with
Excimer UV Radiation”, Materials Review (China), 1996, pp.144-150.
17. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, “Giant Magnetoresistance behaviour in La-Sr-Mn-O
Films Near Room Temperature”, Appl. Phys. Lett., 1996.
18. Zhang, W., Boyd, I.W., Elliott, M., Herrenden-Harkerand, W., “Colossal
LaCaMnO/CeO2/Si Multilayers”, J. Appl. Phys., 1997, 81, 5759 (abstract only).
Magnetoresistance
in
19. Boyd, I.W., Glasow., P., Grimmeiss, H.G., Habermeier, H.U., Siffert, P., “The next twenty years”, Nature
Materials, 2003, 2, 563-565.
20. Magnetic Nanoparticles and Nanowires, eds., D. Kumar, L. Kurihara, I.W. Boyd, G. Duscher, and V. Harris MRS
Symp. Proc. 877E, Warrendale, PA, 2005.
21. H. Dobb, K. Carroll, D. Webb, K. Kalli, M. Komodromos, C. Themistos, G. D. Peng, A. Argyros, M. Large and
M. Eijkelenborg, Q. Fang and I. W. Boyd, “Thermal response of Bragg grating in POF”, Proc. 15th International
Conference on Polymer Optical Fibres, Seoul, 121-125, 11 September, 2006
22. K. Kalli, H. L. Dobb, D. J. Webb, G. D. Peng, Q. Fang, I Boyd, “ Progress towards a tunable FBG POF-based
filter”, invited paper, Proc. ICOCN/ATFO 2006 (ISBN 7-81114-264-3), Chengdu, China, 39-43, 18 September
2006.
Other Publications: Not Reviewed
23. Boggess, T.F., Moss, S.C., Boyd, I.W., Smirl, A.L., "Spectral, Temporal and Spatial Characterisation of a ModeLocked Nd: Phosphate Glass Laser", Bull. Am. Phys. Soc., 1984, 29, pp.919.
24. Boyd, I.W., Moss, S.C., Boggess, T.F., Smirl, A.L., "Morphological Transitions of Crystalline Silicon Induced by
8 ps Nd: Glass Laser Pulses", Bull. Am. Phys. Soc., 1984, 29, pp.919.
25. Boyd, I.W., "Laser Processing and Diagnostics", Physics Bulletin, 1984, 35, pp. 419-420.
26. Boyd, I.W., Moss, S.C., Boggess, T.F., Smirl, A.L., "Amorphisation of c-Si by 7 ps Pulses at 1.05 µm", Bull.
Am. Phys. Soc., 1984, 29. pp 541.
27. Moss, S.C., Boggess, T.F., Boyd, I.W., Smirl, A.L., "The Effects of Nonlinear Media on the Spectra of
Picosecond Laser Pulses", Bull. Am. Phys .Soc., 1984, 29, pp.919.
28. Boyd, I.W., Moss, S.C., "On Laser Enhanced Oxidation of Silicon", in Beam Induced Chemical Processes,
1985, (Eds) von Gutfeld, R.J., Greene, J.E., Schlossberg, H., MRS Extended Abstracts, Nov. 1984, Boston, USA.
29. Boyd, I.W., "Up Close: University College London, Department of Electronic and Electrical Engineering", MRS
Bulletin, X11 (4) pp.54-56.
30. Boyd, I.W., "Photo-Engineering of Thin Film Structures", Turkish J. Phys. 1990, 14 (Suppl 1), pp.12-23
(INVITED PAPER).
31. Boyd, I.W., "First Films of PbSrYCaCuO Grown at UCL", High Tc Update, Techwrite, Oxford, Sept. 1991.
List of Conference Contributions
Invited Papers at International Conferences
1.
Boyd, I.W., "Laser-Induced Oxidation of Silicon Surfaces", European Physical Society, QE Division,
Conference on Surface Studies with Lasers, March 1983, Mauterndorf, Austria.
2.
Boyd, I.W., "Laser Assisted Pyrolytic Growth and Photochemical Deposition of Thin Oxide Films", International Conference on Laser Processing and Diagnostics, July 1984, Johannes Kepler Universitä t, Linz,
Austria.
3.
Smirl, A.L., Boggess, T.F., Moss, S.C., Boyd, I.W., "Pulsewidth Dependence of the Nonlinear Energy Deposition
and Redistribution in Si, GaAs, and Ge during 1 µ m Picosecond Irradiation", 3rd IUPAP Semiconductor
Symposium on High Excitation & Short Pulse Phenomena, July 1984, Trieste, Italy.
4.
Smirl, A.L., Boggess, T.F., Boyd, I.W. Moss, S.C., Bohnert, K., Mansour, K., "Spatial and Temporal Resolution
of the Nonlinear Optical Properties and Melt Dynamics of Si at 1 µ m", SPIE International Conference on
Ultrashort Pulse Spectroscopy and Applications, Jan. 1985, Los Angeles, USA.
5.
Boyd, I.W., "Laser-Assisted Formation of Silicon Dioxide Films", International Winter School on Laser
Modification and Synthesis of Materials, March 1985, Gyuletchitza, Bulgaria.
6.
Boyd, I.W., "Fundamentals and Applications of the Interaction of Picosecond 1 µ m Radiation with c-Si", 2nd
International Conference, Trends in Quantum Electronics, Sept. 1985, Bucharest, Romania.
7.
Boyd, I.W., "Photoformation of Silicon Dielectrics", European Materials Research Society Conference, June
1986, Symposia B & D, Strasbourg, France.
8.
Boyd, I.W., "Oxidation of Silicon by Lasers", NATO ASI on Interfaces under Laser Radiation, July 1986,
Maratea, Italy.
9.
Boyd, I.W., "Silicon Oxidation by Lasers", WEH Heraeus Stiftung: Laser-Induced Chemical Processes at
Interfaces, March 1987, Bad Honnef, West Germany.
10. Boyd, I.W., "Photo-Oxidation of Silicon: Reaction Mechanism and Film Structure", MRS Fall Meeting, Dec.
1987, Boston, USA.
11. Boyd, I.W., "Recent Advances in Oxide Growth", Trends in Quantum Electronics, Sept. 1988, Bucharest,
Romania.
12. Boyd, I.W., "Resistless Patterned Oxide Growth" MRS Fall Meeting, Dec. 1988, Boston, USA. .
13. Boyd, I.W., "Photo-Engineering of Microstructures", International Conference on Beam-Solid Interactions,
April 1989, Ankara, Turkey.
14. Boyd, I.W., "Advances in Direct Photo-Induced Film Growth on Silicon", International Workshop on Laser
Induced Surface Modification, June 1989, Schloss Ringberg, Max Planck Society, Germany.
15. Boyd, I.W., "Low Temperature Photo-Engineering of Oxides", International School on Laser Processing, Oct.
1989, Tashkent, USSR.
16. Boyd, I.W., "Photo-processing of Thin Films", Annual Meeting of the Canadian Association of Physicists,
June 1991, Winnipeg, Canada.
17. Boyd, I.W., "Photoformation of Insulators", Radiation Effects in Insulators-6, June 1991, Weimar, Germany.
18. Boyd, I.W., Beech, F., "Laser Ablation Deposition of Multilayers", International Workshop on Laser Ablation,
Sept. 1991, Bordeaux, France.
19. Boyd, I.W., "Multilayer Superconductor Structures Grown by Laser Ablation", X1V International Conference
on Coherent & Non-Linear Optics, Sept. 1991, Leningrad, USSR.
20. Boyd, I.W., "Low Temperature VUV Growth of Thin Films", International Conference on Electronic
Materials (ICEM '92), June 1992, Strasbourg, France.
21. Boyd, I.W., "Prospects for Thin Film Superconductor Growth by LAD", International Workshop on
Superconducting Electronics, September 1992, Tito, Italy.
22. Boyd, I.W., "Thin Film Growth by PLD", Laser '93, June 1993, Munich, Germany.
23. Boyd, I.W., “VUV Oxidation of Si & SiGe”, Microprocess '93, July 1993, Hiroshima, Japan.
24. Boyd, I.W., Craciun, V., "VUV Oxidation of Silicon", 1st International Rapid Thermal Processing
Conference (RTP '93), September 1993, Phoenix, USA.
25. Boyd, I.W., "Pulsed Laser Deposition of Thin Films", IUMRS'93, September 1993, Tokyo, Japan.
26. Boyd, I.W., “Novel Methods for Low Temperature Thin Film Growth”, Laser Processing: Applications
Photovoltaics, June 1994, Stuttgart, Germany.
in
27. Boyd, I.W., “UV Oxidation Phenomena in Si and SiGe”, Laserion, June 1994, Schloss Ringberg, Germany.
28. Boyd, I.W., “Pulsed Laser Deposition of Thin Films and Multilayers”, World Ceramics Conference, 8th
Cimtec, July 1994, Florence, Italy.
29. Boyd, I.W., “UV Pulsed Laser Deposition and Growth of Good Quality Thin Film Structures”, Gordon Research
Conference on Laser Interactions with Surfaces, August, 1994, New Hampshire, USA.
30. Boyd, I.W., “ULSI Dielectrics: Low Temperature Silicon Dioxides“
Materials (ICEM’94), Dec 1994, Hsinchu, Taiwan.
International Conference on Electronic
31. Boyd, I.W., Zhang, J-Y., Bergonzo, P., “New Excimer Ultraviolet Sources for Photo-Assisted Deposition of Thin
Films:An Alternative to Excimer Laser Deposition“, Photonics West 95, Feb 1995, San Jose, USA.
32. Boyd, I.W., “Dielectric Photoformation on Si and SiGe“, NATO ASI on Rapid Thermal and Integrated
Processing, July 1995, Maratea, Italy.
33. Boyd, I.W., “New UV Sources for Thin Film Deposition“, CLEO Pacific Rim ‘95, July, 1995, Tokyo.
34. Boyd, I.W., “Pulsed Laser Deposition and Growth of Novel Oxide Thin Structures”, 12th Yokohama 21st
Century 21st Century Forum, January, 1996, Tokyo, Japan.
35. Boyd, I.W., “New Large Area UV Lamp Sources and their Applications“, MRS-J, June, 1996, Tokyo.
36. Boyd, I.W., “UV Induced Mechanisms in Oxide Film Formation“, EMRS Spring Meeting, June 1996,
Strasbourg, France.
37. Boyd, I.W., “Lamp Processing of Materials”, MRSI-EMRS Bilateral Meeting, December 1996, Bangalore,
India.
38. Boyd, I.W., J-Y. Zhang, “New Excimer Ultraviolet Sources and their Applications”, International Workshop on
Hard Photon Technology, January 1997, Tsukuba, Japan.
39. Boyd, I.W., “Oxidation of Si and SiGe by UV and VUV Radiation”, MRS Spring Meeting, April 1997, San
Francisco, USA.
40. Boyd, I.W., “Pulsed Laser Deposition of Collosal and Giant Magneto-Resistive Thin Films” Conference on
Laser Ablation (COLA) July 1997, Monterey, USA.
41. Boyd, I.W., “Photo-induced Growth of Dielectrics with Excimer Lamps“, Advanced Laser Technologies (ALT
‘99) September 1999, Lecce, Italy.
42. Boyd, I.W., “Low Temperature Photoformation of Tantalum Oxide“, 10th Workshop on Dielectrics in
Microelectronics, November 1999, Barcelona, Spain.
43. Boyd, I.W., “Large Area UV Growth of Dielectrics”, MRS Spring Meeting, April 2000, San Francisco, USA..
44. Boyd, I.W., “Photo-Induced Large Area Growth of Dielectrics with Excimer Lamps”, International Workshop
on UV Applications, September, 2001, Okazaki, Japan.
45. Boyd, I.W., Zhang, J.-Y., “Applications of Large Excimer Lamps”, International Symposium: - Photonics
Japan, September, 2001, Miyazaki, Japan.
46. Boyd, I.W., “Development and Application of UV Lamps for Oxide Formation”, MRS Spring Conference, April
2006, San Francisco, USA.
47. Boyd, I. W., Liaw, I. I., “UV Excimer Lamp Processing of Thin Films”, Laser Ablation VI, May 2006, Taos,
New Mexico, USA.
48. Boyd, I.W., “Development and Application of Ultra-Violet Excimer Lamps from 354-126 nm”, Advanced
Laser Technologies, Sept 2006, Braşov, Romania.
49. Boyd, I.W., “Development & Application of Dielectric Discharge Ultraviolet Excimer Lamps for Thin Oxide
Deposition & Annealing”, 1st International Symposium on Transparent Conduction Oxides, October 2006
Hersonissos, Crete.
50. Irving I. Liaw, Boyd, I.W., “The Development and Application of UV Excimer Lamps in Nanofabrication”,
Functionalised Nanoscale Materials, Devices, and Systems for Chem.-Bio.-Sensors, Photonics, and Energy
Generation and Storage, NATO-ASI, June 2007, Sinaia, Romania
51. Boyd, I.W., Photo processing in the laboratory: past and future perspectives” Photonics West, January 2008, San
Jose, USA
52. Boyd, I.W., “Recent Developments and Applications of Excimer DBD sources”, 6th International Conference
on Photo-Excited Processes and Applications, September 2008, Sapporo, Hokkaido, Japan
Broadcasts/Interviews
Advanced Laser Applications", Science Service, Romania Radio, October 1988.
"Cheap Chips with Laser Technology", Science in Action, ED1101, BBC World Service, 20-23 Jan 1989.
“The Future of VLSI”, The Works, BBC World Service, November, 1998.
“Low temperature processing for nanotechnology”, Channel 4 News, July 2004
“Cool Light Leads to Cooler Chips”, BBC OnLine News: http://news.bbc.co.uk/2/hi/technology/5128762.stm, July 2006
Invited Seminars & Talks
1.
2.
3.
Laser Processing of Silicon
Laser Oxidation of Silicon
Oxide Formation on Si by Laser:
Photon-Enhanced Considerations
4. Picosecond Resolved Imaging of Laser Melting
5. Dynamic Picosecond Studies of Optically Excited Si
6. Laser Assisted Thin Film Formation
7. Photoformation of Silicon Dielectrics
8. Laser Applications towards Microfabrication
9. Laser Growth of Silicon Oxides
10. Laser Processing in the UK.
11. Ultrathin Oxides on Si Crown by Laser
12. Growth and Sructure of Laser Grown SiO2
13. Photoformation of Silicon Dioxide:
Growth Mechanisms & Microstructure
14. Advances in Laser Processing of Electronic Materials
15. Laser Processing of Superconductors
16. Future Concepts & Needs for Laser Microprocessing
17. SiO2 Microstructure & Microstructures
18. Low Temperature UV Silicon Oxidation
19. Oxide Microstructures
20. Photonic Processing of Silicon Dioxide
21. Laser Ablation of Superconductor Films
22. Low Temperature Photon Oxidation of Si.
23. Thin Film Superconductor Growth
24. Photo-Processing of Silicon Oxide
25. Silicon VLSI: The Why and How
26. UV and Excimer Laser Processing
27. Growth of PbO-BiSrCaCuO Multylayers by Laser
28. Laser & UV Assisted Thin Film Processing
29. Superconductor Growth by Laser Ablation
30. Photo-Processing of Thin Films
31. UV Growth of Dielectric & Superconducting Films
32. Thin Film Growth by UV & VUV Radiation
33. Pulsed Laser Deposition
34. Laser Ablation Deposition of Thin Films
35. Electronic Film Growth by PLD
36. VUV Oxidation of Si and SiGe
37. Pulsed Laser Deposition at UCL
38. Photo-initiated Methods for Low Temperature Processing
39. VUV & Ozone Oxidation of Si and SiGe
40. Development of UV Excimer Lamps
41. New Oxide Structures fabricated by UV Radiation
42. New UV Sources and Some Applications
43. Applications of High Intensity UV Sources
44. Making Light Work: Gigawatts to Nanostructures
45. Growth of High k Dielectrics by UV Lamp
46. UV assisted CVD Processing
47. New High k Dielectrics by UV Processing
48. The London Nanotechnology Centre
49. UVILS-CVD for High k Thin Films
50. Low Temperature UV Deposition of Thin Films
51. Deep UV Oxidation of Si
52. New UV Lamps and their Applications
53. Quantum Computing with Silicon
Hughes Microelectronics, Scotland, 6/82.
IEEE Quantum Electronics Society,
University of Texas, Dallas, USA, 10/83.
Interuniversity Microelectronic Centre (IMEC),
Leuven, Belgium, 3/85.
Johannes Kepler Universitat, Linz, Austria, 5/85.
University of Berne, Switzerland, 5/85.
RSRE, Malvern, UK, 5/85.
Aerospace Corporation, Los Angeles, USA, 12/85.
Rutherford Appleton Laboratory, UK, 3/87.
University of Hull, Hull, UK, 11/87.
Dept. Trade & Industry, London, UK, 11/87.
Hanscom US Air Force Base, Lexington, USA, 12/87.
JPL, Caltech, Pasadena, USA, 12/87.
IBM Thomas J. Watson Research Center
Yorktown Heights, USA, 12/87.
British Aerospace, Bristol, UK, 5/88.
Imperial College, UK, 8/88.
Central Inst of Physics, Bucharest, Romania, 9/88.
University of Surrey, Electronic Eng., UK, 11/88.
IBM Almaden Center, San Jose, USA, 12/88.
INTEL, Santa Clara, USA, 12/88.
University of Connecticut, Hartford, USA, 12/88.
US Air Force Academy, Colorado Springs, USA, 12/89.
London University Semiconductor IRC, ICST, UK, 12/89.
Polytechnique of Lausanne, Switzerland, 12/89.
University of Vigo, Spain, 1/90.
University of Vigo, Spain, 2/90.
Semiconductor IRC, Imperial College, UK, 3/90.
University of Oulu, Finland, 6/91.
National Optics Institute, Quebec, Canada, 6/91.
National Research Council, Ottawa, Canada, 6/91.
Philips Research Labs., Eindhoven, Holland, 10/91.
University of Strathclyde, Glasgow, 3/92.
University of Rome, Italy, 10/92.
ICL, University of Oxford, UK, 10/92.
Wright-Patterson Air Force Base, Dayton, USA, 12/92.
Aerospace Corporation, Los Angeles, USA, 12/92.
University of Waterloo, Canada, 8/93.
Imperial College, UK, 5/94.
University of Beijing, China, 12/1994.
RIKEN, Tokyo, Japan, 7/95.
Hungarian Academy of Sciences, Szeged, 12/95.
Atomic Research Centre, Budapest 12/95.
Natural Sciences Club, UCL, London, 10/96.
NPL, Teddington, UK, 4/97.
Inaugural Lecture, Darwin Theatre, UCL, 5/97.
Paul Scherrer Institute, Switzerland, 2/00.
Palais des Congrès, Strasbourg, France, 6/01.
USTC, Hefei, China, 6/02.
Chinese Academy of Science, Hefei, China, 6/02
Palais de Congrès, Strasbourg, France, 6/02.
Applied Materials, Santa Clara, USA, 4/05.
Applied Materials, Santa Clara, USA, 12/05.
PSI, Villigen, Switzerland, 7/06.
Chinese Academy of Sciences, Hefei, China, 9/07.