Sponsored by
Arizona State University
19th North
American
Conference
on
Molecular
Beam
Epitaxy
October 15~18, 2000
The American Vacuum Society
NA-MBE 2000 Conference Schedule
Sunday, Oct. 15
08:00 – 15:00
13:00 – 17:00
16:00 – 18:00
17:20 – 19:20
19:30 – 21:30
19:30 – 21:30
Event/Session
Conference Hike (Rogers Canyon)
Vendor Exhibit Setup
Registration
Welcoming Reception (Sponsor: InPact)
VG User Meeting (by invitation only)
Riber User Meeting (by invitation only)
Location
Eng. Research Center
MU/Arizona (207)
MU/Arizona Entrance
MU/Arizona (207)
TMP Hotel
Monti's La Casa Vieja
Monday, Oct. 16
07:50 – 08:20
08:00 – 17:00
08:00 – 17:00
08:00 – 15:00
08:20 – 08:40
08:40 – 10:20
10:20 – 10:40
10:40 – 12:20
12:20 – 13:40
12:40 – 13:40
13:40 – 15:00
15:00 – 15:20
15:20 – 17:00
17:00 – 17:20
17:20 – 19:00
19:00 – 22:00
Continental Breakfast (Sponsor: Philips)
Vendor Exhibit Open
Registration
Manuscript Submission
Opening Remarks (Crouch, Zhang, Turner)
Session 1, Devices – Nitrides (Chair: Nguyen)
Coffee Break (Sponsor: Advanced Ceramics)
Session 2, Nitrides (Chair: Pfeiffer)
Lunch Break (Sponsor: AXT)
Lab Tours (MBE, CSSER, CSSS)
Session 3, Nitride alloys (Chair: Tu)
Coffee Break
Session 4, Novel materials (Chair: Beresford)
Social Break (Sponsor: IQE)
Session X, MBE road map (Sponsor: IQE)
Applied Epi User Meeting (open invitation)
MU/Arizona (207)
MU/Arizona (207)
MU/Arizona Entrance
MU/Arizona Entrance
MU/Ventana (226)
MU/Ventana (226)
MU/Arizona (207)
MU/Ventana (226)
MU/Arizona/Terrace
Eng. Research Center
MU/Ventana (226)
MU/Arizona (207)
MU/Ventana (226)
MU/Arizona (207)
MU/Ventana (226)
TMP Hotel
Tuesday, Oct. 17
07:50 –08:20
08:00 – 17:00
08:20 – 10:20
10:20 – 10:40
10:40 – 12:20
12:00 – 14:00
12:20 – 13:40
12:40 – 13:40
12:20 – 15:20
13:40 – 15:00
15:00 – 15:20
15:20 – 16:20
16:20 – 17:20
17:40 – 18:40
18:40 – 20:00
20:00 – 20:40
20:40 – 21:00
Continental Breakfast (Sponsor: AXT)
Vendor Exhibit Open
Session 5, Nanostructures (Chair: Xie)
Coffee Break
Session 6, II-VI (Chair: Sivananthan)
Advisory Board Meeting (lunch served)
Lunch Break (Sponsored by Riber)
Lab Tours (MBE, CSSER, CSSS)
Poster Setup (All posters must be up by 15:20)
Session 7, Antimonides (Chair: Hasenberg)
Coffee Break
Poster Session 1
Poster Session 2
Social Hour (Sponsor: UMC)
Banquet with Wine (Sponsor: DCA)
Entertainment (Yellow Bird Productions)
Remarks and Awards
MU/Arizona (207)
MU/Arizona Entrance
MU/Ventana (226)
MU/Arizona (207)
MU/Ventana (226)
MU/Yavapai (209)
MU/Arizona/Terrace
Eng. Research Center
MU/Arizona (207)
MU/Ventana (226)
MU/Arizona (207)
MU/Arizona (207)
MU/Arizona (207)
Terrace, TMP Hotel
Terrace, TMP Hotel
Terrace, TMP Hotel
Terrace, TMP Hotel
Wednesday, Oct. 18
07:50 – 08:20
Continental Breakfast
MU/Arizona (207)
08:00 – 14:00
Vendor Exhibit Open
MU/Arizona (207)
08:20 – 10:20
Session 8, Devices II (Chair: Wicks)
MU/Ventana (226)
10:20 – 10:40
Coffee Break
MU/Arizona (207)
10:40 – 12:20
Session 9, Growth Issues (Chair: Goodhue)
MU/Ventana (226)
12:20 – 13:40
Lunch Break (Sponsor: Riber)
MU/Arizona/Terrace
12:40 – 13:40
Lab Tours (MBE, CSSER, CSSS)
Eng. Research Center
13:40 – 15:20
Session 10, In-situ Monitoring (Chair: Chow)
MU/Ventana (226)
14:00 – 17:00
Vendor Exhibit Breakdown
MU/Arizona (207)
NOTE: MU is the Memorial Union; TMP Hotel is the Tempe Mission Palms Hotel
c
Table of Contents
Letter from the President ---------------------------------------------------------------------------------II
Location ------------------------------------------------------------------------------------------------------III
Parking -------------------------------------------------------------------------------------------------------III
Registration Information and Fees --------------------------------------------------------------------III
Internet Access ---------------------------------------------------------------------------------------------III
Accommodations ------------------------------------------------------------------------------------------IV
Conference Bus Schedule -------------------------------------------------------------------------------V
Conference Committee ----------------------------------------------------------------------------------VI
Social Events ----------------------------------------------------------------------------------------------VII
Appreciation -----------------------------------------------------------------------------------------------VIII
Conference Exhibitors ----------------------------------------------------------------------------------VIII
Conference Event Sponsors --------------------------------------------------------------------------VIII
About the Sponsors ---------------------------------------------------------------------------------------IX
Session 1: Devices-Nitrides -----------------------------------------------------------------------------X
Session 2: Nitrides ----------------------------------------------------------------------------------------XI
Session 3: Nitride Alloys --------------------------------------------------------------------------------XII
Session 4: Novel Materials ----------------------------------------------------------------------------XIII
Session 5: Nanostructures ----------------------------------------------------------------------------XIV
Session 6: II-VI -------------------------------------------------------------------------------------------XV
Session 7: Antimonides --------------------------------------------------------------------------------XVI
Poster Session 1 ---------------------------------------------------------------------------------------XVII
Poster Session 2 ----------------------------------------------------------------------------------------XIX
Session 8: Devices II -----------------------------------------------------------------------------------XXI
Session 9: Growth Issues ----------------------------------------------------------------------------XXII
Session 10: In-Situ Monitoring ---------------------------------------------------------------------XXIII
ARIZONA STATE UNIVERSITY
October 15, 2000
Amid the excitement of one millennium's end and another's beginning, it is especially rewarding
to be at Arizona State University today. We continue to make great progress in many areas, but
none more significant to the future of the state and the nation than in engineering. Our
commitment is reflected in the recent U.S. News & World Report ranking of graduate schools
(ASU is now 49th in Engineering and 18th in Industrial/Manufacturing) as well as in our
continuing expansion of our research facilities and our relationships with local and national
industry.
Although we intend to keep our rankings moving upward in the new millennium, education is
not just about rankings and numbers, it is about giving highly qualified students the opportunity
to develop their potential to its fullest and partnering with industry to bring the results of
innovative research into the lives of citizens everywhere.
The opportunity to host a significant conference like the 19th North American Conference on
Molecular Beam Epitaxy is both a validation of ASU's commitment to excellence in engineering
research and an opportunity to put our research facilities on display to all who attend. We are
proud to join with the American Vacuum Society in sponsoring this year's conference
On behalf of the ASU family, I welcome all of you to Arizona, to Tempe, and, most especially to
Arizona State University.
Sincerely,
Lattie F. Coor
President
LFC:lv
/p
Office of the President
PO Box 872203, TEMPE, AZ 85287-2203
(480) 965-5606 FAX: (480) 965-0865
II
Location
The 19th North American Conference on Molecular Beam Epitaxy will take place in
the Memorial Union on the Main Campus of Arizona State University in Tempe, AZ,
October 15-18, 2000. Arizona State University’s Main Campus is located in the heart of
Tempe and is part of a fast-growing metropolis offering a number of significant cultural
and sporting events.
Parking
40 spaces are reserved in parking structure #1 for the NA-MBE conference. Parking
structure #1 is on Apache Blvd. and College Ave.—100m south of the Memorial Union.
(See campus map on back cover)
Cost to park on campus: $5 per day, payable at the parking lot. Be sure to tell the attendant
you are attending the NA-MBE so they can direct you to the reserved spaces.
Please be aware that campus parking is strictly regulated.
Registration Information
Conference registration will be open in the Arizona Room in the Memorial Union during
the following hours:
 Sunday, October 15
16:00-18:00
 Monday, October 16
08:00-17:00
 Tuesday, October 17 08:00-12:00
A welcoming reception will be in Arizona Room 207 in the Memorial Union, from 17:2019:20, Sunday, October 15.
Registration Fees
regular participant
student participant
prior to Sept 15th
after Sept 15th
$295
$135
$395
$195
The registration fee includes conference registration, the conference program, all
scientific proceedings, and one invitation to the banquet. Additional banquet tickets ($40
each) may be purchased at the registration desk, no later than Monday, October 16.
Internet Access
A number of computers with Internet access will be available for conference participants
during regular conference hours. These computers will be in the Memorial Union’s
Coconino Room 224.
III
Accommodations
The hotels listed below held a limited number of rooms at special conference rates for
reservations made by September 14, 2000. Reservations after that date are accepted
on space and rate availability. Contact the hotels directly to make your reservations. Be
sure to identify yourself as attending the Molecular Beam Epitaxy conference to receive
the reduced rate (if still available). You must provide a credit card number or payment of
the first night's lodging to guarantee your reservation and receive a confirmation. The
hotels are within one to three blocks of the campus conference center. (See map inside
back cover.) Rates do not include 9.97% sales and bed taxes. The Twin Palms Hotel is
within easy walking distance of the Memorial Union. There will be a free Conference
bus available for participants staying in any of the other hotels.
Twin Palms Hotel ($79.00 single/double)
225 E. Apache Blvd.
Tempe, AZ 85281
Phone: (480) 967-9431
Fax: (480) 968-1877
Tempe Mission Palms (TMP) ($139.00 single/double)
60 E. 5th St.
Tempe, AZ 85281
Phone: (480) 894-1400
Fax: (480) 921-9732
Holiday Inn ($107.10 single/double)
915 E. Apache Blvd.
Tempe, AZ 85281
Phone: (480) 968-3451 or (800) 695-6995
Fax: (480) 968-6262
Travelodge ($79.00 single/double)
1005 E. Apache Blvd.
Tempe, AZ 85281
Phone: (480) 968-7871 or (800) 578-7878
Fax: (480) 968-3991
Comfort Inn and Suites ($79.00 single/double)
1031 E. Apache Blvd.
Tempe, AZ 85281
Phone: (480) 966-7202 or (800) 228-5150
Fax (480) 829-9340
IV
Conference Bus Schedule
Route 1: ASU conference site (Lemon & College) to Holiday Inn, Travelodge, Comfort Inn and Suites
Route 2: ASU conference site (Lemon & College) to Tempe Mission Palms
Sunday, October 15, 2000
Route 1 Afternoon bus leaves at:
Holiday Inn
15:40
16:10
16:40
17:10
Travelodge
15:45
16:15
16:45
17:15
Comfort Inn
15:50
16:20
16:50
17:20
ASU
16:00
16:30
17:00
17:30
Route 2 Afternoon bus leaves at:
Mission Palms
15:40
16:10
16:40
17:10
ASU
16:00
16:30
17:00
17:30
Monday, October 16, 2000
Route 1 Morning bus leaves at:
Holiday Inn
07:00
07:30
08:00
08:30
Travelodge
07:05
07:35
08:05
08:35
Comfort Inn
07:10
07:40
08:10
08:40
ASU
07:20
07:50
08:20
08:50
Route 1 Afternoon bus leaves at:
ASU
18:00
18:30
19:00
19:30
Holiday Inn
18:10
18:40
19:10
19:40
Travelodge
18:15
18:45
19:15
19:45
Comfort Inn
18:20
18:50
19:20
19:50
Route 2 Morning bus leaves at:
Mission Palms
07:00
07:30
08:00
08:30
ASU
07:20
07:50
08:20
08:50
Route 2 Afternoon bus leaves at:
ASU
18:00
18:30
19:00
19:30
Mission Palms
18:20
18:50
19:20
19:50
17:40
17:45
17:50
18:00
18:10
18:15
18:20
18:30
18:40
18:45
18:50
19:00
19:10
19:15
19:20
19:30
19:40
19:45
19:50
20:00
20:10
20:15
20:20
17:40
18:00
18:10
18:30
18:40
19:00
19:10
19:30
19:40
20:00
20:10
09:00
09:05
09:10
09:20
09:30
09:35
09:40
09:50
20:00
20:10
20:15
20:20
20:30
20:40
20:45
20:50
09:00
09:20
09:30
09:50
20:00
20:20
20:30
20:50
Tuesday, October 17, 2000
Route 1 Morning bus leaves at:
Holiday Inn
07:00
07:30
08:00
08:30
09:00
Travelodge
07:05
07:35
08:05
08:35
09:05
Comfort Inn
07:10
07:40
08:10
08:40
09:10
ASU
07:20
07:50
08:20
08:50
09:20
Route 1 Afternoon bus leaves at:
ASU
17:00
17:30
18:00
18:30
19:00
Holiday Inn
17:10
17:40
18:10
18:40
19:10
Travelodge
17:15
17:45
18:15
18:45
19:15
Comfort Inn
17:20
17:50
18:20
18:50
19:20
Route 2 Morning bus leaves at:
Mission Palms
07:00
07:30
08:00
08:30
09:00
ASU
07:20
07:50
08:20
08:50
09:20
Route 2 (To banquet) 3 afternoon buses at each time
ASU
17:20
17:40
18:00
18:20
18:40
Mission Palms
17:30
17:50
18:10
18:30
18:50
Route 2 (After banquet) 2 evening buses at each time
Mission Palms
21:00
21:40
22:20
23:00
Holiday Inn
21:15
21:55
22:35
23:15
Travelodge
21:20
22:00
22:40
23:20
Comfort Inn
21:25
22:05
22:45
23:25
Wednesday, October 18, 2000
Route 1 Morning bus leaves at:
Holiday Inn
07:00
07:30
08:00
08:30
Travelodge
07:05
07:35
08:05
08:35
Comfort Inn
07:10
07:40
08:10
08:40
ASU
07:20
07:50
08:20
08:50
Route 1 Afternoon bus leaves at:
ASU
15:30
16:00
16:30
17:00
Holiday Inn
15:40
16:10
16:40
17:10
Travelodge
15:45
16:15
16:45
17:15
Comfort Inn
15:50
16:20
16:50
17:20
Route 2 Morning bus leaves at:
Mission Palms
07:00
07:30
08:00
08:30
ASU
07:20
07:50
08:20
08:50
Route 2 Afternoon bus leaves at:
ASU
15:30
16:00
16:30
17:00
Mission Palms
15:50
16:20
16:50
17:20
V
09:30
09:35
09:40
09:50
19:30
19:40
19:45
19:50
09:30
09:50
09:00
09:05
09:10
09:20
09:30
09:35
09:40
09:50
17:30
17:40
17:45
17:50
18:00
18:10
18:15
18:20
09:00
09:20
09:30
09:50
17:30
17:50
18:00
18:20
Conference Committee
Conference Chair
Organizing Chair
Yong-Hang Zhang
Arizona State University
Dept. of Electrical Engineering
Box 875706
Tempe, AZ 85226-5706
Tel: 480-965-2562
Fax: 480-965-0775
Email: yhzhang@asu.edu
Shane Johnson
Arizona State University
Center for Solid State
Electronics Research
Box 876206
Tempe, AZ 85287-6206
Tel: 480-965-2565
Fax: 480-965-8118
Email: shane.johnson@asu.edu
Program Chair
Proceedings Editor
George Turner
MIT Lincoln Laboratory
244 Wood Street
Lexington, MA 02420
Tel: 781-981-7836
Fax: 781-981-0122
Email: turner@ll.mit.edu
Chanh Nguyen
HRL Laboratories
3011 Malibu Canyon Road
Malibu, CA 90265-4799
Tel: 310-317-5605
Fax: 310-317-5450
Email: cnnguyen@hrl.com
Program Committee
Advisory Board
J. Baillargeon
P. Chin
D. Chow
W. D. Goodhue
T. C. Hasenberg
W. Hoke
D. L. Miller
J. Mirecki-Millunchick
S. Sivananthan
J. Speck
A. J. SpringThorpe
M. Tamargo
C. Tu
Y.-H. Xie
P. Bhattacharya
K. Y. Cheng
A. Y. Cho
W. D. Goodhue
J. S. Harris
W. Hoke
D. L. Miller
A. J. SpringThorpe
C. Tu
G. Turner
K. L. Wang
Z. R. Wasilewski
G. W. Wicks
Y.-H. Zhang
Organizing Committee
M. Beaudoin
R. Droopad
R. Tsui
VI
Social Events
Conference Hike
Sunday, October 15
08:00—15:00
Engineering Research Center (ERC)
Welcoming Reception
Sunday, October 15
Memorial Union—Arizona 207
17:20—19:20
Social Break and Rump Session
Monday, October 16
Memorial Union—Arizona 207
17:00—19:00
Social Hour
Tuesday, October 17
17:40—18:40
Terrace, TMP** Hotel
Banquet with Wine
Tuesday, October 17
Terrace, TMP** Hotel
18:40—20:00
Entertainment (Yellow Bird Productions)
Tuesday, October 17
Terrace, TMP** Hotel
20:00—20:40
Remarks and Awards
Tuesday, October 17
Terrace, TMP** Hotel
20:40—21:00
**Tempe Mission Palms
VII
Appreciation
The Conference Committee would like to thank ASU, the College of Engineering and
Applied Sciences, the Center for Solid State Electronic Research (CSSER), the Electrical
Engineering Dept., the Center for Professional Development, the Memorial Union, all vendors
and all corporate participants for their support of the 19th North American Conference on
Molecular Beam Epitaxy.
Conference Exhibitors
Accent Semiconductor Technologies, Inc.
ADDON/EpiSoft (ARS Associates)
Advanced Ceramics Corp.
American XTAL Technology
Applied Epi
Bede Scientific, Inc.
DCA Instruments
El Dorado Sol, Ltd.
EPIR, Ltd.
GEO Gallium
InPact Company
k-Space Associates, Inc.
Kurt J. Lesker Company
Lehighton Electronics, Inc.
NIMTEC Inc.
Performance Materials, Inc.
Riber
SPECS USA, Inc.
Sumitomo Electric
SVT Associates, Inc.
United Mineral & Chemical Corp.
Vacuum Barrier Corporation
Varian Vacuum Technologies
VBS Industries
VG Semicon
Wafer Technology Ltd.
Conference Event Sponsors
Wafer Technology Ltd. (Conference Bags)
United Mineral & Chemical Corp. (Social Hour)
Riber (Two Lunches)
Philips Analytical (Breakfast)
NIMTEC Inc. (Tee-Shirts)
IQE Inc. (Social Break, Rump Session)
InPact Company (Welcoming Reception)
DCA Instruments (Banquet and Wine)
Applied Epi (Tee-Shirts, Bus Service)
American XTAL Technology (Breakfast, Lunch)
Advanced Ceramics Corp. (Coffee Break)
VIII
About the Sponsors
The American Vacuum Society is a nonprofit organization that promotes
communication, dissemination of knowledge, recommended practices, research, and
education in the use of vacuum and other controlled environments to develop new
materials, process technology, devices, and related understanding of material
properties for the betterment of humanity. The AVS is comprised of 8 technical
divisions, 4 technical groups, 20 local-area chapters and about 6000 members
worldwide. The Society provides stimulating symposia, short courses, and educational
outreach both at the national and local levels.
Web site: www.vacuum.org
The Center for Solid State Electronics Research (CSSER) was established in
1981 during the first phase of the Engineering Excellence Program at Arizona State
University. The vision was to achieve nothing less than national leadership in the
crucial area of solid state electronics. High technology now directly or indirectly
supports one out of every five jobs in Arizona. The Center has exhibited strong and
steady growth since those days and currently provides resources and infrastructure for
research and education in solid state electronics in the form of 30 laboratories and
support areas covering more than 30,000 sq. ft., including a Class-100 Cleanroom
administered and maintained by a complement of 10 staff and 4 student workers.
Today, CSSER has more than 30 active faculty members, 10 post-doctoral
researchers and 75 students drawn from various disciplines, including electrical
engineering, chemical engineering, bioengineering, materials science, mechanical
engineering and industrial engineering. The microelectronics research is focussed in
five main cross-disciplinary efforts: Nanostructures; Molecular Beam Epitaxy (MBE) and
Optoelectronics; Materials and Process Fundamentals; Low Power Electronics; and
Focused Ion Beam research.
Web site: http://ceaspub.eas.asu.edu/csser/
The Center for Professional Development sponsors continuing education
programs for engineers, scientists and technical managers. The Center uses advanced
educational and telecommunication technology to deliver high quality, career-long
education to the job site. The University is a member of the National Technological
University (NTU) and the Association for the Media-based Continuing Education for
Engineers (AMCEE).
Web site: http://www.eas.asu.edu/cpd/
Arizona State University is one of only nine Research 1 institutions in the
nation, joining such prestigious universities as MIT and Stanford in the forefront of
engineering research. A recent U.S. News & World Report ranking of graduate schools
placed ASU’s School of Engineering in the 49 th position in the country and listed the
Industrial/Manufacturing Division in the 18th spot.
IX
Program Schedule*
*The number in parentheses following the title of the presentation is the page number on which
the abstract appears in this booklet.
Monday, October 16, 2000 — Early Morning (8:20-10:20)
08:20–08:40
Opening Remarks (P. Crouch, Y.-H. Zhang, G. Turner)
Session 1: Devices-Nitrides — Chair: C. Nguyen
08:40
1-1
Production of AlGaN/GaN High Electron Mobility Transistor Structures by
Molecular Beam Epitaxy (page 1)
M. Micovic, P. Hashimoto, P. Janke, L. McCray, W. H. Wong, C. Nguyen; HRL
Laboratories LLC
09:00
1-2
MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength OptoElectronics (page 2)
S. G. Spruytte, M. C. Larson1, C. W. Coldren, V. A. Sabnis, J. S. Harris; Stanford
University; 1Lawrence Livermore National Laboratory
09:20
1-3
MBE Growth of Ga(In)NAs/GaAs Heterostructures for Photodiodes (page 4)
D. W. Gotthold, S. Govindaraju, G. Kinsey, A. L. Holmes, Jr., J. C. Campbell;
University of Texas at Austin
09:40
1-4
RF-MBE Growth of III-Nitrides for Micro Sensor Applications (page 6)
D. Starikov, E. Kim, C. Bonney, J. -W. Um, A. Bensaoula; SVEC University of
Houston
10:00
1-5
AlxGa1-xSbAs Lattice-Matched to InP for InAlAs/InGaAs HEMTs (page 8)
W. Z Cai, N. T. Moshegov, T. S. Mayer and D. L. Miller; Pennsylvania State
University
10:20–10:40
Coffee Break
X
Monday, October 16, 2000 — Late Morning (10:40-12:20)
Session 2: Nitrides — Chair: L. Pfeiffer
10:40
2-1
Growth and Characterization of GaN/AlGaN Multiple Quantum Wells for
Near-infrared Intersubband Transitions (page 11)
H. M. Ng, C. Gmachl, S. N. G. Chu, A. Y. Cho, R. L. Forrest1, E. D. Meserole1, M.
S. Goorsky*; Lucent Technologies; 1University of California, Los Angeles
11:00
2-2
Growth of High Mobility AlGaN/GaN Heterostructures by Molecular Beam
Epitaxy on GaN Templates Prepared by Hydride Vapor Phase Epitaxy (page 13)
Michael Manfra, Loren Pfeiffer, Kirk Baldwin, David Lang, Julia Hsu, Kenneth West,
Richard J. Molnar1; Lucent Technologies; 1Massachusetts Institute of Technology,
Lincoln Laboratory
11:20
2-3
Optical Spectroscopy of High-Mobility AlGaN/GaN Heterostructures Grown
by Plasma-Assisted Molecular Beam Epitaxy (page 14)
B. J. Skromme, G. L. Martinez, I. P. Smorchkova1, C.R.Elsass1*, B. Heying1, U. K.
Mishra1, J. S. Speck1; Arizona State University; 1University of California, Santa
Barbara
11:40
2-4
Gas Source Molecular Beam Epitaxy of High Quality Al xGa1-xN (0 x 1) on
Si(111) (page 15)
S. Nikishin, V. Kuryatkov, C. Jin, G. Kipshidze, K. Choi, Iu. Gherasoiu, L. Grave
de Peralta, A. Zubrilov1, K. Copeland, T. Prokofyeva, M. Seon, M. Holtz, H.
Temkin; Texas Tech University; 1Ioffe Physical-Technical Institute
12:00
2-5
Crack Formation in GaN Grown on Silicon by MBE (page 16)
G. W. Wicks, R. Jothilingam, M. W. Koch, J. B. Posthill1; University of Rochester;
1
Research Triangle Institute
12:20–13:40
Lunch Break
XI
Monday, October 16, 2000 — Early Afternoon (13:40-15:00)
Session 3: Nitride Alloys — Chair: C. W. Tu
13:40
3-1
Band Lineup of GaInNP/GaAs (page 17)
Y. G. Hong and C. W. Tu; University of California, San Diego
14:00
3-2
Dilute GaNxAs1-x Grown by MBE Using a Novel RF Plasma Source (page 18)
M. Adamcyk, S. Tixier, B. J. Ruck, J. H. Schmid, W. N. Hardy, T. Tiedje, V. Fink1, M.
Jeffries1, D. Karaiskaj1 K. Kavanagh1, M. Thewalt1; University of British Columbia; 1Simon
Fraser University
14:20
3-3
Growth and Characterization of GaInNAs/GaAs Multiquantum Wells(page 19)
P. Gilet, L. Grenouillet1, P. Duvaut, P. Ballet, G. Rolland, C. Vannuffel, A. Million;
LETI/CEA-G-DOPT; 1LPM-INSA (UMR-CNRS-5511)
14:40
3-4
Antimony in GaN Grown by Molecular Beam Epitaxy (page 20)
C. W. Pei, B. Turk, J. B. Heroux, W. I. Wang; Columbia University
15:00–15:20
Coffee Break
XII
Monday, October 16, 2000 — Late-Afternoon (15:20-17:00)
Session 4: Novel Materials — Chair: R. Beresford
15:20
4-1
ZnO Films on GaN: Band Offset and Control of Polarity (page 21)
S. K. Hong, T. Hanada, H. Makino, H. J. Ko, Y. Chen, T. Yao, A. Tanaka, H.
Sasaki, S. Sato, D. Imai1, M. Shinohara1; Tohoku University; 1Shimadzu Co.
15:40
4-2
Interfaces and Defects in Epitaxial ZnO Films on (01-12) LiTaO3 Grown by
Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy (page 24)
S.-H. Lim and D. Shindo; Tohoku University
16:00
4-3
New Phase Formation of Gd2O3 Films on GaAs (100) (page 23)
A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C.
Steiner1 B. Bolliger1, M. Erbudak1; Lucent Technologies; 1Laboratorium fur
Festkorperphysik, ETH
16:20
4-4
Growth and Characterization of MnAs/ZnSe Ferromagnet/Semiconductor
Hybrid Heterostructures (page 26)
S. H. Chun, J. J. Berry, K. C. Ku, N. Samarth, I. Malajovich 1, D. D. Awschalom1, L.
Chen1 and J. Speck1; Pennsylvania State University; 1University of California,
Santa Barbara
16:40
4-5
MBE Growth and Luminescence Properties of Nd3+ Doped LaF3/CaF2 Thin
Films (page 27)
X. Zhang, E. Daran1, C. Serrano1, K. Pita, C. H. Kam, Y. L. Lam; Nanyang
Technological University; 1Laboratorire d’ Analyse et d’ Architectures des Systeme du
CNRS
XIII
Tuesday, October 17, 2000 — Early Morning (8:20-10:20)
Session 5: Nanostructures — Chair: Y.-H. Xie
08:20
5-1
Non-Linear Optical and Electro-Optic Properties of InAs/GaAs SelfOrganized Quantum Dots (page 29)
S. Ghosh, A. S. Lenihan, M. V. G. Dutt, O. Qasaimeh, D. G. Steel, P.
Bhattacharya; University of Michigan
08:40
5-2
Formation and Photoluminescence of Stacked CdSe Quantum Dots Grown
by Molecular Beam Epitaxy (page 31)
Yasuhiro Murase, Tsuguki Noma, Kenzo Maehashi, Hisao Nakashima; Osaka University
09:00
5-3
Self-Assembled Quantum Dot Transformation via Anion Exchange(page 33)
Jeng-Jung Shen, April S. Brown, Yongqian Wang, Zhong L. Wang; Georgia
Institute of Technology
09:20
5-4
Highly Uniform and High Optical Quality In0.22Ga0.78As/GaAs Quantum Wires
Grown on (221)A GaAs Substrate by MBE (page 34)
T. Nitta, H. Kanamori, Y. Ohno, S. Shimomura and S. Hiyamizu; Osaka University
09:40
5-5
Dislocation Induced Spatial Ordering of InAs Quantum Dots (page 36)
S. Chaparro, R. Leon*, S. R. Johnson, C. Navarro, X. Jin, Y.-H. Zhang; Arizona
State University; *Jet Propulsion Laboratory
10:00
5-6
CBE Growth of InAs/InP Quantum Dots (page 38)
P. J. Poole, J. P. McCaffrey, R. L Willlams, J. Lefebvre, N. Rowell; National
Research Council of Canada
10:20–10:40
Coffee Break
XIV
Tuesday, October 17, 2000 — Late Morning (10:40-12:20)
Session 6: II-VI — Chair: S. Sivananthan
10:40
6-1
ZnxCdyMg1-x-ySe Distributed Bragg Reflectors Grown by Molecular Beam
Epitaxy (page 40)
O. Maksimov, S. P. Guo, Y. Y. Luo, W. Lin, M. C. Tamargo, F. C. Peiris1, J. K.
Furdyna1; CUNY; 1University of Notre Dame
11:00
6-2
MBE-Growth and Characterization of ZnTe:Cr2+ Layers on GaAs (100)
(page 42)
Yu. G. Sadofyev, V. F. Pevtsov, E. M. Dianov1, P. A. Trubenko1, M. V. Korshkov2; P. N.
Lebedev Physical Institute RAS; 1General Physics Institute RAS; 2State Radio-engineering
Academy
11:20
6-3
Electrical Properties of In-Situ As Doped Hg1-xCdxTe Epilayers Grown by
Molecular Beam Epitaxy (page 43)
Y. Selamet, T. S. Lee, S. Sivananthan; University of Illinois at Chicago
11:40
6-4
Growth of Single Crystalline CdS on CdTe by MBE (page 45)
Paul Boieriu, Robert Sporken1, Yan Xin, N. D. Browning, S. Sivananthan;
University of Illinois at Chicago; 1Facults Universitaires Notre-Dame de la Paix
12:00
6-5
Strain-Mediated Phase Coexistence in MnAs Films on GaAs (page 47)
B. Jenichen, V. M. Kaganer, F. Schippan, W. Braun, L. Däweritz and K. H. Ploog
Paul-Drude-Institut für Festkörperelektronik
12:20–13:40
Lunch Break
XV
Tuesday, October 17, 2000 — Mid-Afternoon (13:40-15:00)
Session 7: Antimonides — Chair: T. C. Hasenberg
13:40
7-1
Long Wavelength Pseudomorphic InGaAsSb Active Materials Grown on
GaAs (page 49)
S. R. Johnson, C. Navarro, S. Chaparro, J. Xu, C. -Z. Guo, P. Dowd, W. Braun,
Y.-H. Zhang; Arizona State University
14:00
7-2
Growth, Structure and Optical Properties of GaAsSb Quantum Wells on
GaAs (page 51)
J. E. Cunningham, M. Dinu, J. Shah, M. D. Williams 1; Lucent-Bell Laboratories;
1
Atlanta Clark University
14:20
7-3
Optical Properties of InGaAs/AIAsSb Type-I Single Quantum Wells LatticeMatched to InP Grown by Molecular Beam Epitaxy (page 52)
Nikolai Georgiev, Teruo Mozume; Femtosecond Technology Research Association
(FESTA)
14:40
7-4
InAs/InGaSb Type-II Interband Cascade Lasers (page 53)
H. -W. Ren, Jun Zheng, H. Q. Le, S. S. Pei, S. V. Zaitsov1, W. Y. Hwang1, J.
Um1, Chih-Hsiang Lin1; University of Houston; 1Applied Optoelectronics Inc.
15:00–15:20
Coffee Break
XVI
Tuesday, October 17, 2000 — Late Afternoon (15:20-16:20)
Poster Session 1
15:20 P1-1
Spontaneous Formation of InAs Nanowires on Nominal InP (001) (page 55)
Hanxuan Li, Theda Daniels-Race and Mohamed-Ali Hasan1; Duke University;
1
University of North Carolina at Charlotte
P1-2
Transition from Nanowires to Dots (page 56)
Haeyeon Yang and G. J. Salamo; University of Arkansas
P1-3
Photoluminescence Properties of Self-assembled InAs Quantum Dots
Grown on
InP Substrates by Solid source Moleculor Beam Epitaxy
(page 57)
Q. D. Zhuang, S. F. Yoon, H. Q. Zheng; Nanyang Technological University
P1-4
Microstructural Evolution of Ge/Si (100) Islands (page 58)
David J. Smith, D. Chandrasekhar, P. A. Crozier, M. Floyd, M. R. McCartney, Jeff
Drucker1, S. Chaparro1, Y. Zhang1; Arizona State University; 1University of Texas at El
Paso
P1-5
Systematic Study of Surfactant-mediated Growth and Characterization of
Ge(211)/Si (211) (page 59)
S. Tari, G. Brill, A. Prociuk, S. Sivananthan, M. Floyd1, David J. Smith1; University
of Illinois at Chicago; 1Arizona State University
P1-6
Photoluminescence of the ZnTe (Yb) Films Grown on (100) GaAs by MBE
(page 60)
Yu. G. Sadofyev, V. M. Konnov, N. N. Loiko, A. A. Gippius, P. N. Lebedev;
Physical Institute of the Russian Academy of Sciences
P1-7
Determination of the Indices of Refraction of MBE-Grown ZnSe/ZnCdSe
Multiple Quantum Well Structures (page 61)
F. C. Peiris, U. Bindley, J. K. Furdyna; University of Notre Dame
XVII
P1-8
In-Situ Control of Temperature and Alloy Composition of Cd1-xZnxTe Grown
by Molecular Beam Epitaxy (page 62)
M. Daraselia, J. W. Garland, S. Sivananthan; University of Illinois
P1-9
Temperature
Overshoot
Measurements
During
Growth
of
the
InGaAs/AlGaAs pHEMT System (page 63)
Joseph G. Pellegrino, Jonathan Guyer, Wen Tseng, W. Robert Thurber, Donald A.
Gajewski, C. A. Richter; National Institute of Standards and Technology
P1-10 In Situ Metrology for Real-time Control of Molecular Beam Epitaxy Growth of
Pseudomorphic InGaAs Thin Films (page 64)
Donald A Gajewski, Jonathan E. Guyer, Jeff Hale1 and Joseph G, Pellegrino;
National Institute of Standards and Technology; 1J. A. Woollam Co.
P1-11
The Art of High P-Type Doping of InGaAs Using Carbon Tetrabromide in
Chemical Beam Epitaxy (page 65)
A. Kuhl, R. Arès, R. Streater; Nortel Networks
P1-12
Improved Substrate Temperature Uniformity in a Commercial 4-inch
Single-wafer MBE Reactor with a Dual-Zone Substrate Heater (page 67)
Xiao-Ming Fang, Troy Yurasits, Dmitri Loubychev, Amy W. K. Liu, Mike DeBruzzi1,
Scott Priddy1, Charles Schiprett1; IQE Inc.; 1EPI MBE Products Group
P1-13
The Roles of MBE Growth Temperature, Growth Rate and In % on InGaAs
Microstructure and PHEMT Properties (page 68)
X. Deng, W. Liu, M. E. Lin, Jie Zhang1; Alpha Industries, Inc.; 1Michigan
Technological University
P1-14
Growth and Characterization of Size-Tailored InAs/AlxGa1-xAs Quantum Dots
for Intraband Infrared Photodetectors (page 69)
Z. H. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z.
Ye1, F. Ma1, B. Yang1, J. Campbell1; University of Southern California. 1University
of Texas at Austin.
P1-15
Growth and characterization of Fe/InAs hybrid structure for spin-polarized
electron injection (page 70)
K. Yoh, H. Ohno, A. Subagyo, K. Sueoka, K. Mukasa; Hokkaido University.
XVIII
Tuesday, October 17, 2000 — Late Afternoon (16:20-17:20)
Poster Session 2
16:20 P2-1
CBE Growth of GaN on Si (100) and Si (111) Using Ammonia and Triethyl
Gallium Precursors (page 72)
A. Tempez, E. Kim, A. Bensaoula; SVEC, University of Houston
P2-2
Optical Characterization of In.15Ga.85As1-xNx/GaAs Multiple Quantum Wells
(page 74)
J. B. Héroux, X. Yang, W. I. Wang; Columbia University
P2-3
Microstructure of AlN Thin Films Before and After Ultrahigh Temperature Processing
(page 76)
David J. Smith, Z. Y. Fan, N. Newman; Arizona State University
P2-4
Theoretical study of GaN MBE Growth Using ECR Nitrogen Plasma (page 77)
Wenning Fu, Rama Venkat, Meyya Meyyappan1; University of Nevada;
1
NASA Ames Research Center
P2-5
MBE Growth of an Al Mazed Bicrystal Thin Film on (100) Si (page 79)
A. F. Schwartzman, J. Yin, J. Inoue1, C. L. Briant, L. B. Freund, R. Beresford;
Brown University; 1University of Tokyo
P2-6
STM Observation of GaAs (001) c(4×4)-As Surface During As4 Irradiation (page 81)
Shiro Tsukamoto and Nobuyuki Koguchi; National Research Institute for Metals
P2-7
Effects of the Substrate Tilting Angle on the Molecular Beam Epitaxial
Growth of GaAs on Si (100) (page 83)
M. Meléndez-Lira, M. A. Santana-Aranda1, M. López-López, M. Tamura, T. Yodo1,
and M. A. Vidal2; Centro de Investigación y de Estudios Avanzados del IPN; 1Osaka
Institute of Technology; 2Universidad Autónoma de San Luis Postosi
XIX
P2-8
Improvement of the Optical Quality of InAs/GaSb Superlattices Grown on
GaSb by Molecular Beam Epitaxy (page 85)
E. M. Shaw, T. C. Hasenberg, Lin Zhang, T. F. Boggess; University of Iowa
P2-9
A Comparison of Spontaneous Lateral Composition Modulation in
Various Materials Systems (page 87)
C. Dorin and J. Mirecki-Millunchick; University of Michigan
P2-10 In-Situ Composition Determination with X-ray and Optical Photons (page 89)
Joseph Pellegrino, Donald Gajewski, N. V. Nguyen, Deane ChandlerHorowitz, Syed B. Qadri1, Wen F. Tseng; National Institute of Standards and
Technology; 1Naval Research Laboratory
P2-11 HgCdTe/Si Infrared Detector by MBE for TE Cooled Operation (page 91)
S. Velicu, R. Ashokan, Don Rafol, P. Boieriu1, C. H. Grein1 and S.
Sivananthan1; Smart Pixel Inc.; Jet Propulsion Laboratory; 1University of Illinois
at Chicago
P2-12 MBE Growth of IV-VI MQW Structures on Si (111), BaF2 (111) and PbSe
(100) and Mid-IR PL Studies of Epilayer Heating (page 92)
P. J. McCann, H. Z. Wu, K. Namjou, D. McAlister, X. M. Fang; University of Oklahoma
XX
Wednesday, October 18, 2000 — Early Morning (8:20-10:20)
Session 8: Devices II — Chair: G. W. Wicks
08:20
8-1
Metamorphic Heterojunction Bipolar Transistors and P-I-N Photodiodes on
GaAs Substrates Prepared by Molecular Beam Epitaxy (page 93)
W. E. Hoke, P. J. Lemonias, T. D. Kennedy, E. K. Tong, A. Torabi, J. –H. Jang1,
G. Cueva1, D. C. Dumka1, I. Adesida1; Raytheon RF Components; 1University of
Illinois
08:40
8-2
Strain Relaxation and Dislocation Filtering in Metamorphic HEMT
Structures Grown on GaAs Substrates (page 95)
D. Lubvshev, W. K. Liu, T. R. Stewart, A. B. Cornfeld, X.-M. Fang, X. Xu1, P.
Specht1, C. Kisielowski1, M. S. Goorsky2, J. Mirecki-Millunchick3, C. S.
Whelan4W. E. Hoke4, P. F. Marsh4, S. P. Svensson5; IQE Inc.; 1Lawrence
Berkeley National Laboratory; 2University of California at Los Angeles;
3
University of Michigan; 4Raytheon Microelectronics Center; 5Army Research
Laboratory
09:00
8-3
Mobility Enhancement by Reduced Remote Impurity Scattering in a
Pseudomorphic In0.7Ga0.9As/In0.52Al0.48As QW-HEMT Structure with (411)A
Super-Flat Interfaces Grown by MBE (page 97)
I. Watanabe, K. Kanzaki, T. Aoki, T. Kitada, S. Shimomura, S. Hiyamizu; Osaka
University
09:20
8-4
Molecular Beam Epitaxial Growth and Characterization of Strain
Compensated Al0.3In0.7P/InP/ Al0.3In0.7P Metamorphic/Pseudomorphic HEMTs
on GaAs Substrates (page 98)
W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong; Raytheon RF
Components
09:40
8-5
Optimizing InGaAs-InAlAs HEMTs for Operation at Frequencies > 150 GHz
(page 100)
E. Skuras, G. Pennelli, A. R. Long, C. R. Stanley; University of Glasgow
8-6
Fabrication of a GaP/Al-Oxide Distributed Bragg Reflector for the Visible
Spectrum (page 102)
G. W. Pickrell, H. C. Lin, K. L. Chang, K. C. Hsieh, K. Y. Cheng; University of
Illinois
10:00
10:20–10:40
Coffee Break
XXI
Wednesday, October 18, 2000 — Late Morning (10:40-12:20)
Session 9: Growth Issues — Chair: W. D. Goodhue
10:40
9-1
Combined Silicon, Beryllium and Carbon Tetrabromide Single-Port Dopant
Source for MBE (page 104)
N. T. Moshegov, C. D. Nordquist, W. Z. Cai, T. S. Mayer, D. I. Lubyshey1, D. L.
Miller; Pennsylvania State University; 1IQE
11:00
9-2
Dissociation of As4 Molecules During Molecular Beam Epitaxy of GaAsP on
(n11)A and (n11)B GaAs Substrates (page 106)
Y. Tatsuoka, M. Uenura, T. Kitada, S. Shimomura, S. Hiyamizu; Osaka University
11:20
9-3
Misfit Dislocation Density Reduction of InP-Based Pseudomorphic High
Electron Mobility Structures (page 107)
M. Naidenkova, R. Hsing, M. Goorsky, R. Sandhu, P. Chin, M. Wojtowicz, T.
Block; UCLA; TRW Space and Electronics Division
11:40
9-4
New
Interface
Roughness
Characterization
of
(411)A
NAIGaAs/In0.1Ga0.9As/Al0.23Ga0.77As Pseudomorphic Modulation Doped
Quantum Wells (page 109)
N. Saka, T. Hotta, S. Shimomura, T. Kitada, and S Hiyamizu; Osaka University
12:00
9-5
Improved Interface Abruptness in Pseudomorphic InGaAs/AIGaAs
Quantum Well with (411)A Super-Flat Interfaces Grown by Molecular Beam
Epitaxy (page 111)
T. Kitada, K. Nii, T. Hiraoka, S. Shimomura, S. Hiyamizu; Osaka University
12:20–13:40
Lunch Break
XXII
Wednesday, October 17, 2000 — Mid-Afternoon (13:40-15:20)
Session 10: In-Situ Monitoring — Chair: D. Chow
13:40
10-1 Metastability of InGaAs/GaAs Probed by In Situ Optical Stress Sensor
(page 113)
R. Beresford, K. Tetz, J. Yin, M. Ujue Gonzalez, E. Chason; Brown University
14:00
10-2 Optical and Structural Characterization of In-Situ Buried Multiquantum Well
Structures (page 114)
M. López-López, A. Perez-Centeno, M. Melendez-Lira1, M. Tamura, T.
Ishikawa1; Centro de Investigacion y de Estudios Avanzodos del IPN;
1
Optoelectronics Technology Research Laboratory
14:20
10-3 In Situ, Real-Time Pseudodielectric Function and Terahertz Device
Performance of Low-Temperature-Grown GaAs (page 116)
Donald A. Gajewski, Jonathan E. Guyer, Jeff Hale1, Joseph G. Pellegrino;
National Institute of Standards and Technology; 1J. A. Woollam Co.
14:40
10-4 In-Situ monitoring of MBE-grown Hg1-xCdxTe by Fourier Transform Infrared
Spectroscopy (page 117)
G. Badano, M. Daragelia, S. Sivananthan; University of Illinois at Chicago
15:00
10-5 Growth of HgCdTe for Long Wavelength Infrared Detectors Using
Automated Control from Spectroscopic Ellipsometry Measurements
(page 118)
Jamie Phillips, Dennis Edwall, Don Lee, Jose Arias; Rockwell Science Center
XXIII
NOTES
XXIV
1. Twin Palms Hotel
2. Holiday Inn
3. Travelodge
4. Comfort Inn and Suites
5. Tempe Mission Palms
XXV
XXVI