The study of photo-electric sensor based on the slotted photonic crystal waveguide Daquan Yang, Huiping Tian, Yuefeng Ji Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing yangdq5896@163.com, hptian@bupt.edu.cn, jyf@bupt.edu.cn function and localize light is broken, which are Abstract necessary for these applications. Designing We present a novel concept of a compact, more photonic crystals with strong field confinement sensitive photoelectric sensor, based on the [4,10-12], small mode volumes, and low slotted photonic crystal waveguide structures extinction that can be realized in two dimensional photonic interconnects, and higher sensitivity sensors. At crystal slabs of silicon in Silicon-on-Insulator present, there are large number of documents (SOI) as core material employing a nonlinear and papers ahout the stress sensors[1,7] and optical polymer as infiltration and cladding bio-sensors[6,14-16] based on the photonic material. By applying three-dimensional (3D) crystals. However, the search of photo-electric finite-difference we sensor based on the photonic crystals in simulate the change of optical properties domestic and international research is still in the (including wavelength and transmission) of the exploration W1 silicon photonic crystal waveguide and the waveguide[2,4,10-12] photonic crystals recently slotted photonic crystal waveguide, respectively. reported, that are able to confine light in a The sensitivity enhancement of more than 30 nanoscale low index region are becoming crucial times is demonstrated in the slotted photonic due to the fact that they provide an ideal crystal sensor platform for mode field concentration in the slot configuration. Besides , the quality (Q) factor region where other materials can be inserted to has also been improved significantly. provide a myriad of new explorations[2]. Keywords: slotted photonic crystal; SOI; In this paper, we propose a novel concept of a FDTD; transmission; sensitivity; compact, more sensitive photo-electric sensor, time-domain waveguide (FDTD), photo-electric photo-electric sensor; quality factor losses stage. enables Particularly, lower the loss slotted based on the polymer-infiltrated slotted photonic crystal waveguide structures. The ability of 1 Introduction electro-optical(EO) [9] active polymers to infiltrate structures on the scale of hundreds of Photonic crystals (PhC) is a kind of periodic nanometers had been previously shown to work dielectric structure with the capability to from solution [2,8]. To increase the interaction manipulate light propagation[9], which have of the external electric field and optical field (i.e. been studied extensively for many applications, TE polarization) in the nonlinear polymer region including optical waveguides and interconnects, a slot was introduced into the PhC defect modulators [2,8] and switches, and sensors waveguide. Finally, using the three-dimensional [7-16]. When the defects are introduced in (3D) finite-difference time-domain (FDTD), we photonic crystals, the periodicity of the dielectric simulate the change of optical transmission of Considering a PhCW photo-electric sensor the W1 silicon photonic crystal waveguide and without slot as shown in Figure 1, it is the waveguide constructed in a silicon slab (nsi=3.48) by respectively when the drive voltage increase at arranging a triangular lattice of air holes U =0.2V. The sensitivity enhancement of infiltrated with the polymer (npoly=1.6), where a more than 30 times is demonstrated in the slotted single row of air holes is removed. Two photonic crystal waveguide photo-electric sensor electrodes have been placed on each side of the configuration. Besides, the quality (Q) factor has waveguide. This means that the electrostatic also been improved obviously. field lines are parallel to the y axis, allowing the slotted photonic crystal largest electro-optic coefficien r33 in polystyrene 2 The simulation methods to be used. In our design, we consider the drive Two-dimensional photonic crystal lattice hole and defect hole positions were integrated to define the complete photonic crystal structure. Finite-difference time-domain (FDTD) analysis of the photonic crystal structure was carried out using software with subpixel averaging for increased accuracy (meep). All simulations were voltage (U) between the electrodes as the varation parameter. By applying the 3D FDTD method, U is varied from 0 to 1.0v with step U =0.2V, the transmission spectrum for TE polarized light-wave in W1 PhCW can be numerically calculated and analyzed, as shown in Figure 2. carried out at the resolution (resolution=10) in order to obtain consistent comparison results. The Gaussian source with center frequency ( 0.27(2 c a) )was used and run for several periods. The simulation area was surrounded by one-spatial unit thick perfectly matched layer (PML), which absorbed the fields leaving the simulated region in order to prevent reflections. 3 The theoretical model and the simulation result Figuer 2 Normalized transmission spectra of the W1 PhCW photo-electric sensor with six different drive voltage ranging from U=0v to 3.1 Photo-electric sensor based on photonic U=1.0v in U =0.2v increments. crystal waveguide without slot To make the device operate around 1550 nm, the lattice constant is tailored to a= 426 nm, the bulk a hole radius of the PCW is r=0.32a and the slab Electrode thickness H=220 nm. The radii of the first two rows of holes adjacent to the defect are r1=0.3a, 2r2 2r1 Light r2=0.36a respectively. When the drive voltage varies from 0 to 1.0v, because of the Pockels y npoly nsi x z Figure 1 Electrode Structure model of W1 PhCW photo-electric sensor without slot, where a=426 nm, r = 0.32a, r1 = 0.3a, r2=0.36a. effect based on electronic displacement the refractive index of polymer will be changed. The relationship between the variation of refractive index of polymer(△n)and the drive voltage (U) can be defined as follows: 1 U n n3poly 33 2 d a (1) Electrode Where r33 is the electro-optic coefficient. By choosing a state of the art polymer material with r33=150 pm/v, U is the applied modulated voltage, and d is the width of the waveguide. 2r2 2r1 w Light y nploy Based on the sensor’s architecture shown as Figure 1, using the FDTD simulation method, nsi x z Electrode the electric field distribution for the sensor at operating frequency ( 0.27(2 c a) ) is Figure 4 shown in Figure 3. The FDTD simulation result r1 = 0.3a, r2=0.36a, w=0.25a. show that the resonance wavelength shifts up by U = 0.1V, as plotted in Figure 2. In Figure 3, the resonance wavelength shift 0.27nm for is also plotted as a function of variation of the drive voltage, the sensor’s sensitivity is defined as: S= / U (2) The calculated structural varition rate S of the W1 PhC waveguide photo-electric sensor is 2.7nm/v in the drive voltage measurement range 0-1.0v. Structure model of slotted PhCW photo-electric sensor, where a=426 nm, r = 0.32a, The structure of the slotted PhC waveguide photo-electric sensor as shown in Figure 4, where a single row of air holes is removed and replaced by a narrow air slot. Two electrodes have been placed on each side of the waveguide. We also consider the drive voltage (U) between the electrodes as the varation parameter. By applying the 3D FDTD method, U is varied from 0 to 1.0v at the U =0.2V, the transmission spectrum for TE polarized light-wave in slotted PhC waveguide photo-electric sensor is shown in Figure 5. u=0v u=0.2v u=0.4v u=0.6v u=0.8v u=1v 0.8 Transimission---(a.u.) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Figure 3 The relationship between the applied drive voltage and the change of output resonance wavelength is a linear dependence,the sensitivity of the W1 PhCW sensor is about 2.7nm/v. Insert: calculated y component of the electic field distribution for the W1 PhCW sensor at operating frequency. 3.2 Photo-electric sensor based on photonic crystal waveguide with slot 1200 Figuer 5 1400 1600 1800 wavelength---(nm) 2000 2200 Normalized transmission spectra of the slotted PhCW photo-electric sensor with six different drive voltage ranging from U=0v to U=1.0v in U =0.2v increments. In order to obtain consistent comparison results, all the structural parameters about the slotted waveguide sensor , such as the lattice constant a, the hole radius of the PCW r, r1 and r2, and the slab thickness H, are the same as the W1 waveguide structural parameters except for the width of the slotted waveguide w, where the change of peak wavelength--/nm slotted waveguide width is 0.25a. 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 slot波 导 结 构 w1波 导 结 构 线性拟合 0 Figure 7 0.2 0.4 0.6 0.8 the voltage between waveguide--/v 1 The relationship between the applied drive voltage and the change of output resonance Figure 6 The relationship between the applied wavelength. The relationships of the sensor drive voltage and the change of output resonance sensitivity for the W1 PhCW sensor and the wavelength slotted PhCW sensor are presented. is a linear dependence, the sensitivity of the slotted PhCW sensor is about 87nm/v. Insert: calculated y component of the electic field distribution for the slotted PhCW sensor at operating frequency Based on the sensor’s architecture shown in Figure 4, by applying the FDTD simulation method, the electric field distribution for the sensor at operating frequency ( 0.27(2 c a) ) is shown in Figure 6. The FDTD simulation result shows that the resonance wavelength shifts up about by 9nm for U = 0.1V, as plotted in Figure 6. In Figure 6, the resonance wavelength shift is also plotted as a function of variation of the drive voltage. The calculated structural varition rate S of the slotted PhC waveguide photo-electric sensor is about 87nm/v in the drive voltage measurement range 5 Conclusions In conclusion, we present a more sensitive photo-electricsensor, based on the polymer infiltrated slotted photonic crystal waveguide structures. Using the three-dimensional (3D) finite-difference time-domain (FDTD), we simulate the change of optical transmission spectrum properties of the W1 PhCW sensor and the slotted PhCW sensor, respectively. By comparing with the two different structures of the sensor, both simulaition and calculation data demonstrate that the slotted PhCW sensor exhibits over 30-times sensitivity enhancement that benefits from the strong restrict of light in a nanoscale low index region. Acknowledgement 0-1.0v. In Figure 7, comparing with the PhCW sensor without slot, we can come to a conclusion This research was supported in part by NSFC that the sensitivity of the slotted PhCW (No. 60707001, No. 60711140087), National photo-electric sensor configuration is improved 973 Program (No. 2007CB310705), National more than 30 times. 863 Program (No. 2009AA01Z214), NCET (07-0110), SRFDP(200800130001), PCSIRT (No.IRT0609), ISTCP(No.2006DFA11040), P. R. China. References [1] Christopher Kang, Sharon M. 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