INVITED
Light Emitting Silicon-Germanium Nanostructures for Optical Interconnects
L. Tsybeskov1, E.-K. Lee1, and H.-Y. Chang1
D. J. Lockwood2, J.-M. Baribeau2
T. I. Kamins3
1
Department of Electrical and Computer Engineering, New Jersey Institute of
Technology, Newark, NJ 07102
2
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A
0R6, Canada
3
Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, California 94304
Corresponding author email: tsybesko@adm.njit.edu
Three-dimensional, SiGe nanostructures grown on Si (SiGe/Si) exhibit
photoluminescence and electroluminescence in the important spectral range of 1.3-1.6
μm. At a high level of photo-excitation or carrier injection, the previously accepted type
II energy band alignment at Si/SiGe cluster hetero-interfaces no longer controls radiative
carrier recombination. Instead, a recently proposed dynamic type I energy band
alignment is found to be responsible for the strong decrease in carrier radiative lifetime
and further increase in the luminescence quantum efficiency.
Q
J3
Silicon Photonics
Semiconductors for Optoelectronics: Heterostructures