Project Deliverable D2.2
Project Number:
Project Acronym:
247992
SEMIDEC
Instrument:
Project Title:
Stimulating Semiconductor Design Cooperation
between Europe and Russia
Thematic Priority
SUPPORT ACTION
INTERNATIONAL COLLABORATION
Title
D2.2 Report on organisations and research in semiconductor design methods and tools in Russia
Contractual Delivery Date:
Actual Delivery Date:
Month 12 (November 2010)
Start date of project:
Month 12 (November 2010)
Duration:
December, 1st 2009
Organization name of lead contractor for this deliverable:
Fraunhofer IIS
24 months
Document version:
V1.0
Dissemination level ( Project co-funded by the European Commission within the Seventh Framework Programme)
PU
Public
PP
Restricted to other programme participants (including the Commission)
RE
Restricted to a group defined by the consortium (including the Commission)
CO
Confidential, only for members of the consortium (including the Commission)
Authors (organizations) :
Anna PYATENKO, Johann Hauer (Fraunhofer IIS),
Giles BRANDON (Intelligentsia)
Gergana HRISTOZOVA (Inno),
Alexander LARCHIKOV (MIET),
Alexander KOROTKOV (SPbSPU),
Anton YANOVSKY (RTTN)
Reviewed by: Giles BRANDON (Intelligentsia)
X
Report on
Russian Semiconductor Research,
Technology and Organizations
SEMIDEC REPORT ON ORGANISATIONS AND RESEARCH IN SEMICONDUCTOR DESIGN IN RUSSIA |
2
This report has been prepared under the FP7 SEMIDEC project. The project is a European
Commission funded initiative entitled “Stimulating Semiconductor Design Cooperation Between
Europe and Russia” (Contract No 247992). Its main aim is to increase cooperation in developing
semiconductor design methods and tools between the EU and Russia. The project runs from
December 2009 until November 2011.
The project is being implemented by a consortium of European and Russian partners:






Intelligentsia Consultants, www.intelligentsia-consultants.com, Project Coordinator
Inno TSD SA, www.inno-group.com
Fraunhofer-IIS, www.iis.fraunhofer.de
Russian Technology Transfer Network www.rttn.ru
Moscow Institute of Electronic Technology, http://eng.miet.ru
St Petersburg State Polytechnical University, www.spbstu-eng.ru
This report has been written by the following group of experts:
Anna PYATENKO, Fraunhofer-IIS, anna.pyatenko@iis.fraunhofer.de (lead author)
Johann HAUER, Fraunhofer-IIS, johann.hauer@iis.fraunhofer.de
Giles BRANDON, Intelligentsia Consultants, gilesbrandon@intelligentsia-consultants.com
Gergana HRISTOZOVA, Inno, g.hristozova@inno-group.com
Alexander LARCHIKOV, MIET, lartchikov@unicm.ru
Alexander KOROTKOV, SPbSPU, korotkov@rphf.spbstu.ru
Anton YANOVSKY, RTTN, a.yanovsky@rttn.ru
If you would like further information about the FP7 SEMIDEC project and its activities and events,
please visit the project website: www.semidec-ru.eu
Disclaimer
Neither the European Commission nor any person acting on behalf of the Commission is responsible for the use, which
might be made of the following information. The views expressed in this report are those of the authors and do not
necessarily reflect those of the European Commission
© FP7 SEMIDEC, 2010
Reproduction is authorised provided the source is acknowledged
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
Table of Contents
3
TABLE OF CONTENTS
INTRODUCTION ........................................................................................................................ 5
1. RUSSIAN SEMICONDUCTOR SECTOR .............................................................................. 6
1.1
1.2
SHORT HISTORY ..........................................................................................................................6
CURRENT SITUATION .................................................................................................................7
1.2.1
1.2.2
1.2.3
1.2.4
EDUCATION AND RESEARCH ............................................................................................................. 7
INDUSTRY .............................................................................................................................................. 8
SEMICONDUCTOR MARKET ............................................................................................................... 9
STATE SUPPORT ................................................................................................................................. 12
1.2.4.1
1.2.4.2
1.3
TRENDS .......................................................................................................................................23
1.3.1
1.3.2
1.3.3
1.3.4
2.
INTEGRATED CIRCUITS ............................................................................................................31
SYSTEM ON A CHIP (SOC) .......................................................................................................33
SILICON-ON-INSULATOR (SOI) ..............................................................................................34
PHOTONICS ................................................................................................................................35
MEMS AND NEMS .....................................................................................................................36
FPGA ............................................................................................................................................ 37
RFID ..............................................................................................................................................38
SENSORS .....................................................................................................................................39
OPPORTUNITIES FOR RUSSIA TO PARTICIPATE IN EUROPEAN IC ACTIVITIES.......... 40
3.1
3.2
3.3
4.
EDUCATION AND RESEARCH ........................................................................................................... 23
INDUSTRY ............................................................................................................................................ 25
SEMICONDUCTOR MARKET ............................................................................................................. 26
STATE SUPPORT ................................................................................................................................. 27
RUSSIAN SEMICONDUCTOR RESEARCH AND TECHNOLOGY ...................................... 29
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
3.
STATE INFRASTRUCTURE ............................................................................................................................ 12
STATE SUPPORT PROGRAMMES ............................................................................................................... 16
IC DESIGN TRENDS IN EUROPE ..............................................................................................40
EUROPEAN R&D FRAMEWORK PROGRAMMES ................................................................. 47
EUROPEAN TECHNOLOGY PLATFORMS AND NETWORKS OF EXCELLENCE .................48
INTELLECTUAL PROPERTY AND EU-RUSSIA SEMICONDUCTOR COOPERATION ....... 51
4.1
4.2
4.3
4.4
INTELLECTUAL PROPERTY ORGANISATIONS AND TREATIES ..........................................51
INTELLECTUAL PROPERTY OWNERSHIP AND RIGHTS ......................................................52
INTELLECTUAL PROPERTY TRANSFER ..................................................................................54
EXPORT CONTROL.....................................................................................................................55
5. RECOMMENDATIONS ..................................................................................................... 58
APPENDIX A BIBLIOGRAPHY ............................................................................................. 61
APPENDIX B RUSSIA’S MEMBERSHIP OF WIPO TREATIES ............................................. 64
APPENDIX C ORGANIGRAMME OF R&D SYSTEM IN RUSSIA ........................................ 65
APPENDIX D EUROPEAN TECHNOLOGY PLATFORMS ..................................................... 66
APPENDIX E
EUROPEAN NETWORKS OF EXCELLENCE ................................................... 78
APPENDIX F
RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS ........................... 81
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
Table of Contents
4
INTRODUCTION
This report aims to provide a thorough description of Russian organisations and research concerned
with semiconductor design methods and tools. Furthermore, the report examines the overall Russian
semiconductor sector and the key role performed by the State. Next, opportunities for Russia to
participate in European activities are investigated as well as how semiconductor related intellectual
property can be transferred between the regions. Finally, the report concludes with a set of practical
recommendations on ways for Russia and Europe to strengthen their semiconductor cooperation in
the future.
The report is structured into the following sections:
 Section 1 provides an overview of the Russian semiconductor sector.
 Section 2 provides a detailed analysis of Russian semiconductor research and technology.
 Section 3 examines the opportunities for Russia to participate in European IC activities.
 Section 4 describes and assesses semiconductor intellectual property transfer between Europe
and Russia.
 Section 5 contains recommendations on how to enhance semiconductor cooperation between
Europe and Russia.
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Introduction
5
1. RUSSIAN SEMICONDUCTOR SECTOR
1.1 SHORT HISTORY
The USSR was one of the world’s leaders in the area of microelectronics between the 1950s and
1970s. Its leadership was not limited to IC production, but also covered material science, electronic
engineering and clean room infrastructure. Even during the 1980s, the technology lag with leading
industrial nations was only about 3-4 years.
In many areas, for example heterostructures and optoelectronics, technological advances were made
earlier in Russia than abroad. Furthermore, electronics organizations existed across all the Soviet
Republics having been established on powerful scientific and technological institutions1.
There were lags in some areas, in particular, in LSIC (large-scale integrated circuits) where it was
about 3-5 years. In 1987, the State established a goal to eliminate the lag and a colossal investment
plan was initiated. Financing began in 1988 but already by 1990 everything had been stopped. In late
1991, the USSR disintegrated and the Soviet electronics industry almost disappeared with it.
Since the late 1960s, the global microelectronics industry has been evolving exponentially in
accordance with Moore’s famous law. However, Russia has been largely absent from developments
between 1990 and 2005. The period up to 1990 in the USSR was characterized by the supply of
semiconductor electronics – from simple components up to ICs and LSIC - for civilian and military
applications in protected domestic markets. The absence of external market competition contributed
to the USSR not maintaining its technological leadership despite the considerable potential of its
scientists and designers.
Between 1990 and 2005, there were attempts to support microelectronics in Russia. However, the
technology gap between Russia and the world’s leading companies increased to 4 technological
generations. Meanwhile, the consumption of imported electronic components grew rapidly to 95% of
all sales in Russia by 2005. Unsurprisingly, only several tens of Russian design-centres and a few
industrial organizations (e.g. “Mikron” and “Angstrem”) survived the market upheaval.
The latest period of the Russia’s electronics industry can be traced back to 2005. The industry is now
comprised of about 200 organizations - 121 industry organizations, 18 production organizations, and
61 scientific organizations. Amongst them there are 36 federal state unitary enterprises and 164 open
joint stock companies. About 57% of the parts produced by the Russian electronics industry consist of
electronic based components: microchips and semiconductor devices (23%), electronic discharge
devices (19%), electro vacuum devices (14%), and optoelectronic devices (1%)2.
1
"Revival: A Look Inside "("Возрождение: взгляд изнутри"), «Open systems» («Открытые системы»), № 6, 2008,
http://www.osp.ru/os/2008/06/5345422/
2
SEMIDEC Project www.semidec-ru.eu
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Russian Semiconductor Sector
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1.2 CURRENT SITUATION
1.2.1 EDUCATION AND RESEARCH
There still exists a system for training highly skilled professionals in Russia, which is based on a unique
polytechnic education schools. However, facilities at Russian universities are often outdated and
graduates, despite their high professional level, often lack English language skills. On top of that, the
best graduates are often hired by international companies and leave the country.
The acute shortage of young, energetic and ambitious entrepreneurs, as well as market-oriented
middle and upper level managers, poses a serious obstacle to the development of the domestic
electronics industry. The absence of such human capital makes it almost impossible to implement the
most perspective and complex IC products and services.
Developers of very large scale integrated circuits (VLSI) and systems-on-chip (SoC) are needed most of
all today. However, according to representatives of several foreign companies (e.g. Synopsis), market
development for new customer designs will slow down in 2-3 years due to the lack of specialists and
additional training centres.
Russia still retains considerable resources in the field of basic and applied research. Since the
beginning of the new millennium, Russian microelectronics research has begun a logical transition
towards the nanoscale region. To enable State policy in the field of Nanotechnology, the Russian
Corporation of Nanotechnologies (RUSNANO) was established in 2007.
Based on information from an assessment by the Russian Academy of Sciences in 20083, the current
state of R&D in various critical technologies in the Russian Federation is presented in table below:
Critical technologies
Software design technologies
Technologies for electronic components database creation
Nanotechnologies and nanomaterials
Technologies for creation and processing of polymers and elastomers
Technologies for creation and processing of crystalline materials
Technologies for mechatronics and creation of micro system technics
Standard of Russia
compared to World
Level
3
1
1
2
2
1
1 - Russian developments are inferior to the global level in general and only in some areas do they match.
2 - Russian developments match the global level in general.
3 – Russian developments match the global level; Russia is leading in some areas.
3
Prognosis for science- technology development in the Russian Federation till 2030, Moscow , 2008, p.38,
http://www.ras.ru/FStorage/Download.aspx?id=5f47fe85-3594-4b3a-84b9-e63b640eaec4
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On the one hand, Russia’s current scientific and technological potential is being maintained thanks to
the R&D and innovation programmes of recent decades. On the other hand, Russia's electronic
science and technology development is strongly driven by security threats and gaps in ICT
development perceived by the State.
1.2.2
INDUSTRY
The Russian electronics industry can be divided into 3 main groups: large companies, small/new
companies, and design-centres.
The first electronics industrial group comprises of large companies, which were established in the
Soviet period. They are highly vertically integrated with capabilities spanning the industrial cycle from
design to production to product distribution. However, they lack modern design and production
technologies and much of their equipment is obsolete. Such larger organisations have usually
reorganized into companies that produce specific devices or have broken-up into smaller
organizations. Furthermore, their involvement in silicon wafer treatment has gradually petered out.
Nevertheless, such organisations survive thanks to their management’s old industrial contacts, which
help to ensure they win State contracts.
The current situation with regard to serial production is as follows: 180-500 nm chips are produced in
Russian electronic facilities in Zelenograd (Moscow district), while 130-90 nm chips are produced in
the Far East of Europe based on Russian designs. Russia has only recently started installing a
production line for chips below 180 nm.
The second electronics industrial group comprises of small, new companies that are either “start ups”
or the result of the break-up of older, larger organisations. Typically, the number of personnel does
not exceed 100 people in such companies. These companies have managed to identify areas of
interest and applications, which are economically profitable. The basis of their existence is contacts
with manufacturers of devices and electronic components and with higher education institutes, which
are also a source of talented employees.
Several different business strategies exist for new Russian microelectronic companies. The following
are the main options:
• Cooperation with large foreign corporations in educational programmes and services in Russia in
areas of common interest;
• Development of special software for the design of various types of devices;
• Development of small-series ICs based on FPGA for Russian consumers;
• Cooperation with large foreign corporations in the field of designing IP-blocks to order;
• Development of original projects for sale to large foreign corporations.
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The third electronics industrial group comprises of scientific and research departments of universities,
institutes and also state scientific research organizations. Some of them have successfully developed
domestic and international relations and transformed into modern design-centres. Others
concentrate on solving scientific tasks and are waiting for budget financing to increase. However,
their continued scientific research in microelectronics faces an uphill battle without the support of
industry and development of new products.
Russian design centres do not have significant production facilities, so their products can be presented
only in the form of intellectual property. But the intellectual property also becomes quickly obsolete
due to the high replacement rates. Consequently, companies cannot afford to be engaged in long-term
projects – they probably do not have the necessary resources and they run the risk of their design
becoming outdated before it has a chance to be produced. It is also very dangerous to concentrate all
efforts on a single project. If the project proves unprofitable, then the financial viability of the design
centre is put at risk. Typically, during a given year, the number of microelectronics design projects that
reach production is three times smaller than the number of projects in development. The optimal
variant is 3-4 projects in development with different dates for completion. Comprehensive and well
executed business plans are required to ensure that the company and its staff have the necessary
equipment (e.g. CAD systems) and training (e.g. design methods).
Finally, it should be mentioned that the number of new organizations is rising very quickly in Russia as
a result of foreign direct investment. The interest of the world’s leading electronics companies in
Russia and East Europe can be explained by the lack of qualified designers in Europe, America and
South-East Asia. Moscow and St Petersburg are important sources of highly skilled and qualified
human capital, which have universities training people for the electronics industry in cooperation with
multinational enterprises.
1.2.3
SEMICONDUCTOR MARKET
With the dramatic growth in imports of electronic components and products during the 1990s and
early 2000s, Russia surrendered its technological independence and leadership. One consequence of
this is that State security has been compromised. For example, ICs for domestic security applications
may be designed locally but are typically produced at foreign foundries. Consequently, the risk exists
that the IC topology can be interfered with.
In view of the strategic national importance of microelectronics, versus the current lack of domestic
production capability, some government ministries and agencies are trying to change the situation.
However, with limited financial and human resources, the government is proving ineffective so far at
establishing new production facilities.
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Since the late 1990s, government support for the electronics industry has grown, however the crisis in
the sector has only deepened. A key reason is the Russian industry’s uncompetitiveness compared to
the global industry and its urgent need for restructuring. Government support needs to be more
targeted on the creation and support of highly competitive businesses rather than the maintenance of
existing, monolithic companies. Unlike other developed countries, there is a lack of lobbying by the
domestic electronics industry in the bodies of state power in Russia.
Today, the Russian semiconductor market is characterised by a lack of diversified demand from
private industry and the State. Only certain microelectronics areas are supported by State
programmes. Consequently, the majority of Russian organizations offer their developments and
competencies in the following applied areas:
• Telecommunications,
• Transport, safety and security,
• Semiconductor manufacturing approaches, processes and tools.
In percentage terms, the structure of the Russian microelectronics market is as follows:
Structure of the Russian Microelectronics Market4
Many Russian microelectronics companies only work for one or two customers. Consequently,
demand is irregular and can easily collapse. Often the demand is not even large enough to meet the
production capacity of a single, typical, foreign semiconductor factory.
4
Uriy Borisov, Deputy Minister Ministry of Industry and Trade of the Russian Federation, Report on the conference “Russian microelectronics market –
perspectives of development”, February 26, 2010, Moscow
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Russian Semiconductor Sector
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Also problematic is the number of different products produced by a factory. The lack of commercial
perspectives for modern semiconductor production is the main reason no large scale production
facilities exist in Russia. Household and office electronics, automotive and telecommunications form
the main demand for microelectronics, however their manufacture is virtually absent in Russia.
For investment in semiconductor production to breakeven, it nearly always involves production runs
in the millions. The Russian semiconductor production industry simply cannot compete. Successful
global semiconductor production companies demonstrate flexibility and speed in restructuring their
lines for new product runs, ensuring output quality control, and a willingness to produce different
products. This is in complete contrast to Russian production, which is rather closed and traditionally
focused on small runs for military and space electronics5.
Experts estimate that Russia only has a development lead in narrow fields of electronics,
nanotechnology and mechatronics. However, although Russia can produce science and hightechnology concepts, their commercialisation must largely be implemented by other countries, and
the finished products are often then imported back into Russia.
Despite the gloomy assessment, there are grounds for future optimism as Russia has significantly
increased its investment in R&D in recent years. Hopefully, the increase in R&D activity will lead to the
development of high-technology electronic products that are competitive on domestic and world
markets. Also, in recent years, Russian private investors have begun investing in the electronic
industry for the first time ever. However, it has been a steep learning curve for the new Russian
owners who have not been prepared for such complex business cycles with unusually long – by
Russian standards - investment payback periods.
5
“The chance of Russia in the IT market”, Adamov D., Tishin U., Electronics: Science, Technology, Business, 3/2005,
http://www.electronics.ru/issue/2005/3/17
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1.2.4
STATE SUPPORT
The State plays a pervasive role in semiconductor research and production in Russia as the following
figure summarises.
4
IP
1
IP
2
3
IP
IP
IP
IP
The State influences activities through several main routes:
1 – Federal targeted programmes and research contracts
2 – Special tax treatments and funding schemes
3 – IC design contracts for domestic applications
4 – Military contracts
IP – Intellectual property (e.g. chip designs)
These will be examined in more detail in the following sections.
1.2.4.1
STATE INFRASTRUCTURE
The State funds a range of different facilities - R&D centres and innovation support infrastructure – to
support semiconductor research and production (See Appendix C for an organigramme illustrating
much of the State R&D system in Russia). Development of such state infrastructure is dependent on
the State’s strategy goals for research and industrial policy.
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Joint Use Centres
Joint Use Centres for scientific equipment in the Russian Federation are multi-functional research
complexes enabling a broad circle of scientists and scientific teams to carry out research on the basis
of state-of-the-art, expensive and unique equipment, giving an opportunity to increase the efficiency
of the usage of such equipment.
Joint Use Centres are key support units in the country’s regions and facilitate frontier research,
integrated developments and implementation of significant innovative projects.
The situation today with respect to Joint Use Centres is as follows:
 national network of 56 Joints Use Centres created in 7 federal districts of the Russian
Federation;
 accumulated 1,674 units of scientific equipment (total cost over 500 M€, i.e. about 5.5% of the
cost of the national research equipment stock)6.
Labs for New Knowledge Generation
Several Labs for New Knowledge Generation have been established across Russia to conduct R&D
work, to efficiently use practical professional skills, to use accessible knowledge bases for problem
solving, and to generate new knowledge.
A good example is the Laboratory of Micro-technologies and Micro-electromechanical Systems in the
Innovation and Investment Centre of St.Petersburg State Polytechnical University. The lab's core staff
consists of highly trained professionals who combine good theoretical knowledge with serious
practical experience. The lab can conduct the full development cycle for new devices through to
successful testing of experimental prototypes and manufacture of small production series.
Scientific-Innovation Centres
Scientific-innovation centres provide high level conditions for commercial developments and work for
scientific, engineering and business groups.
Clean Room Facilities
Many of the above described R&D and scientific organisations also have clean room facilities including
the following examples:
•
•
•
Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow;
Research-and-manufacturing enterprise Technofilter, Vladimir;
JSC POLEMA, Tula;
6
Catalogue of Joint Use Centers of scientific equipment (of project executors in 2005-2006 of the federal task scientific and technical program
“Researches and developments in priority areas of the science and technology” for 2002-2006) / Moscow State University of Engineering Ecology. Center
for Applied Studies. – M., 2007. -149 p.
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•
•
•
•
•
•
Moscow Institute of Electronic Technology, Zelenograd;
JSC Svetlana, St. Petersburg;
Saint Petersburg Electrotechnical University "LETI" (ETU);
St Petersburg Academic University — Nanotechnology Research and Education Centre of the
Russian Academy of Sciences;
Lebedev Institute of Physics of the Russian Academy of Sciences, Moscow - Clean room
system for production of powerful and durable semiconductor lasers;
Russian Research Institute of Engineering Physics, Snezhinsk, Chelyabinsk region - Clean room
system for hydride technology of heterojunction manufacturing department and naturally in all
semiconductor production facilities.
Technoparks
Technoparks are medium-sized specialized centres which house high-tech enterprises in such sectors
as nano-, bio-, information and other kinds of technology, as well as scientific research organizations,
educational institutions providing staff for such enterprises, and other related ventures. The surface
area of a typical Russian technological park is about 700,000 square meters, with 40% of this
designated for residential buildings, 25-30% for industrial purposes and 30-35% for infrastructure7.
The Russian Union of Innovation and Technology Centres (RUITC) represents more than 29
technoparks – with over 1500 companies - from across Russia8. RUITC aims to improve Russian
innovation complex infrastructure as well as create an information environment for the efficient
interaction of innovation centres.
Arguably the most successful technopark in Russia is the one first established in 1991 at Moscow
Institute of Electronic Technology (MIET) in Zelenograd9. The technopark has since grown into a major
innovation complex encompassing an innovation-technology centre, technology village (high-tech
cluster) and technology transfer office. Between 1999 and 2006, the MIET innovation complex created
impressive impacts in terms of stimulating innovation and entrepreneurism as the following table
demonstrates:
Indicator
1999
2002
2004
2006
Number of small high tech firms
Volume of sales (€m)
Volume of investments (€m)
Number of MIET professors working
at small firms
Number of students trained at small
firms
Number of graduates hired by high
tech companies located in the cluster
10
2.2
1.5
2
40
14.6
9.1
8
70
35.7
14.3
30
160
72.1
23.1
60
35
150
260
440
30
120
220
470
7
http://newsletters.cii.in/newsletters/russian_newsletter/creating_techno_parks_in_russia.htm
http://eng.unitc.ru
9
INNO-Policy TrendChart - Policy Trends and Appraisal Report – Russia, Ivanova et al, 2007
8
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This “success story” demonstrates that State initiatives aimed at creating technological infrastructure
can be successful, especially in the case of different types of infrastructure that co-exist on one
territory. Aside from that, important factors for success have been: 1) Zelenograd’s narrow
specialization on electronics: much of the electronics industry is presented nearby, which has helped
with establishing linkages between the university, small companies and large firms and factories; and
2) Zelenograd already initially possessed strong potential in education and research.
Technology Transfer Centres
The mission of technology transfer centres is to support the development of innovative business and
the commercialization of science-intensive technologies in Russia. Technology transfer centres receive
information from their members about offered or requested technologies and conduct technology
audits. In this way, they are able to build-up a common database of technology offers and requests.
The clients of technology transfer centres are SMEs and big companies, academic and industrial R&D
institutes, universities and individuals engaged in the promotion of technology information and
partner search. The main objectives of technology transfer centres can be summarised as:
• technology transfer between the science sector and industry, as well as between different
industries,
• partner search for co-operation in development and commercialization of new high-tech
products.
Over 60 technology transfer centres from 25 Russian regions are linked together under the Russian
Technology Transfer Network (RTTN)10.
Recently, the Russian Corporation of Nanotechnologies (RUSNANO) and the Russian Academy of
Sciences (RAS) have established a joint Center for Technology Transfer (CTT) 11. The total budget for the
project is 65.4m roubles of which RUSNANO is contributing 34.9m roubles. The mission of the CTT is
to commercialize knowledge and technology developed by the research institutes of RAS. Projects
developed in the centre can apply for RUSNANO’s co-financing, as well as to seed and venture capital
funds. Another important function of the centre is to monitor technological trends and challenges, as
well as analyse industrial road maps.
Special Economic Zones
A special economic zone (SEZ) is a geographical region that has economic laws that are more liberal
than a country's typical economic laws. Approximately 20 special economic zones (SEZs) have been
founded in Russia. Among them there are technical/innovation zones, industrial/development zones
and tourist zones.
As of March 2010, Russia's federal special economic zones host 207 investors from 18 countries.
10
11
ERAWATCH Research Inventory Report for: Russian Federation, Manfred Spiesberger, 30.04.2010
RUSNANO and Russian Academy of Sciences Establish Technology Transfer Center 15.07.2010, http://www.rusnano.com/Post.aspx/Show/27155
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Russia’s 15 existing and intended federal special economic zones are managed by OJSC "Special
Economic Zones". OJSC "SEZ" was founded in 2006 to accumulate and implement world best practice
in developing and managing SEZ and to promote foreign direct investment (FDI) in the Russian
economy. It is fully owned and funded by the Russian State. Federal economic zones in Russia are
regulated by Federal Law №116 FZ issued on July 22, 200512.
1.2.4.2
STATE SUPPORT PROGRAMMES
Due to the recent world economic crisis, the Russian State’s funding of certain investment projects
has been cut, but the maximum reduction is expected to be limited to 15%. Also, some projects have
been postponed e.g. from 2009 until 2010. State support takes the form of direct and indirect
measures13:
1.
2.
Direct support of $50 Billion (e.g. $10 Billion for Stage I enterprises)
Indirect support:

Government guarantees for credits, subsidies interest rates

20% reduction in profit tax

Reduced export taxes for certain products

Government buy-back of qualifying companies

Continued government support of critical technologies
Block fund allocation was the most important funding tool in Russia in 2007, with a share of slightly
more than 50% of civil public R&D budget allocated via this mode. However, block funding will
diminish relative to competitive funding schemes in the coming years. It will also increasingly be based
on key performance indicators for the R&D institutions.
There are several important public institutions that receive large chunks of their R&D budget in the
form of block funds:
1.
2.
3.
4.
5.
Ministry of Science and Education
Federal Agency for Science and Innovations (Rosnauka)
Russian Foundation of Basic Research (RFBR)
Foundation for Assistance to Small Innovative Enterprises (FASIE)
State corporations, including Rosatom, Rusnano, and Russian Technologies are
important groups that receive block funding.
The State – with a 63% share - is the largest funder of R&D in Russia as shown in the figure overleaf.
12
http://www.musavirlikler.gov.tr/upload/RF/SEz%20ing%20kanun.pdf
Russian Market Update, World Trade Center, Moscow, Russia, 8th April, 2009,
http://www.semiconsingapore.org/cms/groups/public/documents/web_content/ctr_028480.pdf
13
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Gross domestic expenditure on R&D (GERD)14
In the past few years, the State has introduced competitive funding programmes - called Federal
Targeted Programmes - to support specific thematic priorities (e.g. nanotechnologies) and socioeconomic priorities (e.g. human resources). The recent economic situation has helped to stimulate a
policy shift to a more competitive and project based allocation of R&D funding in Russia.
The Federal Targeted Programmes are multi-annual in duration and come with substantial budgets.
The funds are spread over the programme period with annual budget increases so that the funding
peak occurs at the end of the programme period.
There are a number of thematically focussed Federal Targeted Programmes involving semiconductor
R&D that have been introduced in recent years, which distribute funds on a competitive basis via
tenders:
 The Federal Targeted Programme National Technological Base 2007-2011 is a thematic
funding programme focussed on industry and accordingly managed by the Ministry of Industry
and Trade, and the Ministry of Education and Science. The budget amounts to RUB 61 billion
(€1.52 billion) and is financed to slightly less than 50% by the federal budget.
14
ERAWATCH Research Inventory Report: RUSSIAN FEDERATION
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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 The Federal Targeted Programme Development of Electronic Component Base and Radio
Electronics 2008-2015; budget: RUB 187 billion (€4.68 billion), of which RUB 110 billion funded
from the federal budget;
 The Research and Development in Preferred Elaboration Directions of the Russian
Technology Complex 2007-2012 managed by Ministry of Education and Science of the Russian
Federation, budget: RUB 187 billion (€4.68 billion).
 Strategy of Russian electronic industry development till 2025 managed by Ministry of Industry
and Energy. The budget amounts to:
o 1st stage (2007-2011) – 4,9 billion roubles, of which 3,0 billion roubles funded from the
federal budget;
o 2nd stage (2012-2015) – 63,2 billion roubles, of which 38,9 billion roubles funded from the
federal budget;
o 3rd stage (2016-2025) – 115,0-135,0 billion roubles, of which 70,0-80,0 billion roubles
funded from the federal budget.
In the table on the following pages, the main programmes are summarised, which provide support to
semiconductor related education, research, production and entrepreneurism.
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Programme Name
Programme
End Date
Areas of Interest
Federal Target Programmes
Development of scientific
and technical potential of
the Russian with a view of
preferred
directions
science, technology and
technique development in
the Russian Federation.
Creation
of
national
nanotechnology network
modern infrastructure for
development
and
implementation of native
nanoindustry potential.
Development of scientific
and technological and
industrial
base
for
elaboration
and
production of competitive
high technology electronic
products for solving the
priorities problems of
socio-economic
development and national
security.
Funding
Comments
4,7bn
euros
(187bn roubles)
Priority
directions
of
science and technology
development in Russia in
accordance with the list of
critical technologies in
Russian Federation.
Research
and
Development in Preferred
Elaboration Directions of
the Russian Technology
Complex 2007-2012
2012
Development
of
the
nanoindustrial
infrastructure
in
the
Russian Federation 20082010
2010
Development
of
the
electronic component base
and radioelectronics 20082015
2015
Scientific and academic
and teaching staff of
innovation Russia 20092013
2013
Creation conditions for
effective reproduction of
scientific and academic
and teaching staff and
young people fixation in
sphere of a science,
education
and
high
technology, maintenance
of
intergenerational
continuity in science and
education.
2,3bn
euros (90,4 bn
roubles)
Undefined
The main goal is R&D at
start-up
enterprises
support. This is the first
government
initiative
providing small enterprises
with
seed
financing.
Financing is provided
through
a
special
government foundation for
assistance
to
small
Fund
budget
defined
annually. Data
for 2010 –
60.5m
euros
(2,4bn roubles)
FASIE Programmes
Support of R&D at start-up
innovative companies –
programme START
695m
euros (27,7bn
roubles)
4,7
euros (187
roubles)
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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bn
bn
It is planned that in 2011
will
be
achieved
technological level of 0,09
microns
with
the
subsequent transition by
2015 to a technological
level of 0,045 microns that
will essentially reduce of
Russian electronics and
radio electronics from
world indicators.
19
Programme Name
Programme
End Date
Member of Youth Research
and
Innovation
Competition(U.M.N.I.K.)
Undefined
Partnership
universities
and
companies
programme – PUSK
Undefined
FASIE-OSEO (Joint FrancoRussian projects)
2010
FASIE-BMBF
(Joint
German-Russian projects)
2010
Areas of Interest
innovative
enterprises
whose budget is 1.5% of
the total federal budget for
civilian
science.
The
foundation finances only
R&D work of small
enterprises.
The
main
goal
is
identification of young
scientists, seeking to fulfil
their potential through
innovation activity, and
stimulation of youth mass
participation in scientific
and technological and
innovation
activity,
through organizational and
financial
support
of
innovative projects. The
foundation supports the
implementation
of
research and advanced
development projects of
programme participants.
The main goal is the
promotion
of
small
innovative enterprises and
level
increasing
of
technology
and
competitive through the
introduction of scientific
and
technological
development of Russian
institutions and the special
training of engineering
skills for a particular
technology or design.
The call objective is
promotion
and
development of bilateral
scientific and technological
cooperation
between
Russian and French small
innovative
enterprises,
conducting
applied
researches.
Support is lent to GermanRussian research projects
Funding
Comments
Fund
budget
defined
annually. Data
for 2010 –
60.5m
euros
(2,4bn roubles)
Support can be lent to
French
and
Russian
research projects aimed at
priority technology in
terms of French and
Russian sides (without
limitation of subject areas).
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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Programme Name
Programme
End Date
The Foundation for the
Assistance
of
Small
Innovation Enterprises in
science and technology,
R&D and anti-crisis
Undefined
”RAZVITIE” programme
Undefined
”INTER” programme
Undefined
RFBR projects
The joint research projects
call of RFBR and CNRS
(PICS
international
projects
of
scientific
cooperation 2011)
2014
Areas of Interest
Funding
in the following research
themes:
Biotechnology,
research in health and
medical
equipment
sphere; Nanotechnology;
Information
and
communication
technology; New materials
and
production
technologies; Technology
resources and energy
efficiency,
stable
environmental
technologies;
Optical
technology.
The main goal is support of
R&D
at
start-up
companies. This is the first
government initiative of
providing small companies
with
seed
financing.
Financing is provided
through
a
special
government foundation for
small
innovative
enterprises
assistance,
which budget is 1.5% of
the total federal budget for
civilian
science.
The
foundation finances only
R&D work of small
enterprises.
The main goal is increasing
market capitalization of
small
innovative
enterprises.
Perform research and
development work by
residents
of
special
economic
zones
of
technology-innovative
type.
Fund
budget
defined
annually. Data
for 2010 –
60.5m
euros
(2,4bn roubles)
Comments
The main goals is support
for basic research in the
following disciplines:
mathematics, informatics
and mechanics; physics
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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Programme Name
Programme
End Date
Areas of Interest
Funding
Comments
and astronomy; chemistry
and materials science;
biology
and
medical
science; earth sciences;
human and social sciences;
information
technology
7and computer systems;
fundamentals
of
engineering sciences.
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1.3
TRENDS
1.3.1
EDUCATION AND RESEARCH
The Russian system of engineering education is currently undergoing remarkable structural
transformation in accordance with the principles of Bologna declaration as well as best practices
and standards in worldwide academia and in engineering education in particular.
Also, the prestige of Russian higher education has considerably improved since the beginning of
the 2000s, especially in law and economics. But, despite the country's increased demand for
higher education, the salaries of university professors remain low.
There is some disparity in the information about the average salaries of academics. Oleg Smolin,
Deputy Chairman of the State's Duma Committee on Education, said the average salary of
university professors was about 17,000 roubles a month (US$600). But, according to Andrei
Fursenko, the Minister of Education, the rate is much higher, at 50,000 roubles (US$1750). Even
so, 50,000 roubles are inadequate when compared to the ever-rising cost of living in Russia. This
creates conditions for corruption in the country's universities15.
In Russia, scientific research expenditure has declined more than fivefold during the preceding
18 years and approached the level of developing countries. Today, Russia’s annual investment in
science is 1/7th of Japan and only 1/17th of the United States of America. The number of
researchers has halved.
The average age of production and research equipment is over 20 years old despite the
maximum effective age being just 9 years. New equipment is mainly imported. Nevertheless,
some high-tech areas - such as nuclear energy, rocket and space industry and aircraft industry have managed to more-or-less maintain investment in advanced facilities. In other sectors, such
as machine tools, there has been a serious collapse in a similar manner to that witnessed by the
electronics industry16.
The expected evolution in the numbers of R&D organizations is shown in the following
diagram17.
15
RUSSIA: Rising corruption threatens universities”, University World News, Eugene Vorotnikov 16 May 2010
ISSN 1019-3316, Herald of the Russian Academy of Sciences, 2009, Vol. 79, No. 2, pp. 109–116. © Pleiades Publishing, Ltd., 2009. Original
Russian Text © B.N. Kuzyk, 2009, published in Vestnik Rossiiskoi Akademii Nauk, 2009, Vol. 79, No. 3, pp. 216–224,
http://www.springerlink.com/content/28310242w7371134/fulltext.pdf?page=1
17 Prognosis for science- technology development in the Russian Federation till 2030, Moscow , 2008
http://www.ras.ru/FStorage/Download.aspx?id=5f47fe85-3594-4b3a-84b9-e63b640eaec4
16
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Dynamic evolution of the number of R&D organizations number
Some analysts claim that, in general, the level of high technology development across Russia is
about 10-15 years behind that of the most advanced nations, and up to 20 years behind in
specific areas.
Number of personnel working in R&D in Russia (thousands people)
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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The above figure shows the forecasted evolution of personnel involved in R&D 18. According to
the State’s development strategy, the number of personnel in R&D organizations is forecast to
rise to 1,8 times that of 2007 levels by 2030, and the number of researchers is expected to rise
to 1.9 times by the same year.
1.3.2
INDUSTRY
In 2009, the electronics world was on the threshold of a crisis: the production capacity of
modern enterprises far exceeded demand whilst designers lacked the time and technological
resources to create new products. At the same time, South East Asian companies have been
seeking to become not only the major contract manufacturers of commoditised ASICs, but also
developers and manufacturers of devices. It is a far more profitable market. This development is
leading to radical changes in the structure of the global electronics industry.
The establishment of large development teams tends to reduce the responsibility and creativity
of individual workers. In turn, this can lead to a drop in work productivity. One of the ways to
solve the problem is to restructure large teams into a system of relatively independent design
centres. Each design centre carries out its part within the bounds of a common programme of
development and specializes in IP-developments in a defined area. The design centres also
compete against each other since the IP-products of one centre can be replaced by the products
of others. There is a trend for large corporations to establish new design centres around the
world. Nevertheless, small independent design companies are able to compete with them
successfully.
Large corporations are interested to have their own networks of independent design centres
that can supply IP-blocks and secondary products covering the whole range of components for
new electronic systems. If a small independent company comes to market with a new and very
profitable product, larger corporations need to learn to be nimble in order to rapidly design and
produce their own version at lower cost.
On the other hand, the market for electronic goods is developing intensively. Consumer
electronic products become obsolete after 3-4 years and need to be replaced. Smaller,
independent companies expand the range of consumer electronics, ensure low volume
deliveries of industrial electronics, and reduce overall production costs by increasing the use of
semiconductor foundries. Small firms play a useful role for large corporations in this way.
18
Prognosis for science- technology development in the Russian Federation till 2030, Moscow , 2008
http://www.ras.ru/FStorage/Download.aspx?id=5f47fe85-3594-4b3a-84b9-e63b640eaec4
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Consequently, the microelectronics industry is currently characterized by intensive
technological developments as well as growth in the number of independent design centres and
growth in those linked to large corporations.
1.3.3
SEMICONDUCTOR MARKET
Today, there is a huge market for smart cards used in electronic passports, driving licenses, bank
cards, social cards and SIM-cards. Also, RFID tags are an example of an electronic technology
experiencing huge growth. RFID tags are being used everywhere: shops, hospitals, factories and
warehouses, and contactless cards for travel in metros. In Russia, the demand for such chips is
estimated to be hundreds of thousands, if not billions, of pieces per year19.
Demand is also being driven by government policy. For example, the federal programme
"Development of Broadcasting in Russia", adopted by the Government of Russia, aims to deliver
nationwide digital television broadcasting by 2015.
Smart cards, RFID tags and consumer digital devices are good examples of relatively simple
chips, required in vast quantities, but not needing leading edge manufacturing facilities for their
production. These devices exhibit two key qualities, which are necessary for the recoupment of
investment in modern semiconductor manufacturing: widespread and sustainable demand. The
forecasted demand for microelectronics devices in Russia is as follows:
Forecasted demand for microelectronic devices in Russia20:
Passports
Social cards
SIM-cards
Driving licenses
RFID
Digital Television
GLONASS
6 m.
4,5 m.
45 m.
15 m.
300 m.
58 m.
750,000
Currently, it is difficult to say if the capacity of Russian production facilities will be sufficient to
match the forecasted demand.
Market demand for electronics components can also be assessed from data provided in the
government’s programme “Development of the electronic component base and radioelectronics
2008-2015”. The figures for different market segments are provided in the following table:
19
20
ROSNANO and JSC «Sistematika Group» invest to the establishment of domestic RFID-tags manufacturer», 24.03.2010
«Micro perspectives of Russian microelectronics», March 2010, http://www.hifinews.ru/article/details/10546.htm
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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Market demand for electronic components and radioelectronics (Billions Roubles)
Market segment
1.
2.
3.
4.
5.
6.
7.
RFID
GLONASS
Digital television
Broadband access
Avionics
Automobile industry
Special equipment
TOTAL
1.3.4
Annual sales volume of
electronics
6-7
1,5 - 2,2
6-8
0,7 - 0,9
1 - 1,5
5-6
15 - 20
35,2 – 45,6
Annual sales volume of
radioelectronics
15 - 18
3,5 - 4,5
20
1,5 - 1,8
2,5 - 4
16 - 18
30
88,5 – 96,3
STATE SUPPORT
The State’s main strategic goals concerning science and technology development over the
coming years are formulated in two documents: “List of priority directions for development of
science, technology and engineering in the Russian Federation” and “List of critical technologies
of the Russian Federation”.
Recently, the Russian government has announced plans to establish 59 National Technology
Platforms, however the precise technology topics are not yet known. In a similar approach to
European Technology Platforms, the Russian National Technology Platforms will aim to draw
together universities, public research institutes and industry on common technology projects. It
is anticipated that 6-7 will be launched by the end of 2010 and the rest over the coming years21.
One of the Russian government’s most important and widely discussed policy measures is the
“Skolkovo Project”. This is a new and ambitious project to establish an ultra-modern scientifictechnological complex in the Skolkovo Village near Moscow.
The Skolkovo Project is also a good example of how many different factors – political, economic
and technological – influence Russian microelectronics development. The future innovation city
in Skolkovo will have a special legal regime and its own special security force. The city, which has
come to be referred to as an innograd, will also have a tax regime that is not typical: companies
that have the status of ‘resident’ will be exempt of profit and property taxes and will have lower
rates for social expenditures.
21
Minutes - Meeting of the Government Commission on High Technology and Innovations, 02.08.2010,
http://innoedu.ru/information/tp/files/protokol_pk.pdf
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The innograd will be run by a nonprofit foundation that will be managed by Viktor Vekselberg22
and established by the Russian Academy of Sciences, Rosnano, Vneshekonombank, Russian
Venture Company, Small Business Research Development Foundation, Housing Assistance
Foundation and several nonprofit organizations that will found universities, including Bauman
Moscow State Technical University.
The foundation will build the innograd for 25,000 -30,000 people and organize its main activities.
The first residents will move in within about 3 years. Scientific research premises will be built, as
will graduate schools, laboratories, housing, offices, kindergartens, schools and hospitals.
Highway infrastructure will be built within four years. Financing of the first stage (technical
assignments, architectural plans, tenders, and analyses) will cost 4.6 billion roubles, which was
earmarked by the government’s commission for modernization this year23.
World famous companies such as Philips (Holland), Nokia (Finland), Siemens (Germany), Boeing,
Cisco and Intel (USA) have expressed strong interest to be involved in the Russian Silicon Valley
(which is how the Skolkovo Project is also referred to).
22
23
http://en.wikipedia.org/wiki/Viktor_Vekselberg
St. Petersburg Times, Issue #1568 (29), Tuesday, April 27, 2010, http://www.sptimes.ru/index.php?action_id=2&story_id=31316
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2. RUSSIAN SEMICONDUCTOR RESEARCH AND TECHNOLOGY
During the first half of 2010 the FP7 SEMIDEC project team conducted a mapping exercise of
Russian semiconductor organisations.
The mapping exercise involved surveying over 100 public and private organisations across
Russia to identify their organisational structure, research activities, technologies and interest for
international cooperation. The geographical distribution of these semiconductor organisations
across Russia is illustrated in the map overleaf. Furthermore, a comprehensive list of Russian
semiconductor organisations can be found in Appendix F.
Thanks to the mapping exercise, it has been possible to identify the main strengths of Russian
organisations, which make them potentially attractive for European microelectronics companies
and research organisations:
Russian Semiconductor Sector – Main Strengths
S1. Good educational and theoretical basis of Russian experts
S2. Good contacts between Russian and European experts based on past cooperation projects
S3. Wide variety of nanoelectronics applications are being developed and introduced
S4. Comparative level of salaries of Russian experts is less then in Europe
S5. Strong Russian government support to microelectronics sector
S6. Strong growth in the Russian semiconductor market
Also, the mapping exercise has helped to pinpoint the technical domains where Russian
organisations are most active:








integrated chips (ICs),
system-on-chip (SoC),
silicon-on-insulator (SOI),
photonics,
micro/nano-electromechanical systems (MEMS/NEMS),
field programmable gate array (FPGA),
radio frequency identification devices (RFID) and
sensors.
The involvement of Russian organisations in each of these technical domains is examined in
depth in the following sub-sections.
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Map of Main Russian Cities with Semiconductor Organisations
2.1
INTEGRATED CIRCUITS
Geographical situation
The majority of Russian organizations involved in semiconductor
design R&D are active in the area of IC design. Most of these
organisations are concentrated close to Moscow, in Zelenograd,
also known as “Russian Silicon Valley”. Also, there are R&D centres
situated around Russia such as St. Petersburg, Voronezh and
Vladimir. Organisations are also located in Tomsk, Novosibirsk and
in the south of Russia such as Taganrog.
Technologies
Russian organisations are involved in three main directions in IC design: mixed IC, analogue IC
and digital IC. The majority of them work with semiconductor materials on the basis of silicon
(Si). The organisations mainly use the following technologies: CMOS / BiCMOS and bipolar.
However, the technology level varies considerably between design and production
technologies.
For example, Voronezh Innovation & Technology Centre works on the basis of modern technical
processes according to standard design cycle with CMOS technology: 0.13, 0.18, 0.25, 0,35, 0.5
and 0.8 μm. Whilst the fabless Vladimir State University has successful experience in design of IC
with design rules of CMOS 0.35 μm, 0.18 μm and 0.13 μm, St. Petersburg State Polytechnical
University works in design area of analog and RF ICs, ADCs with design rules 0.35 and 0.18 μm
CMOS or “IDM-plus” from Zelenograd offers CMOS, SoC, EEPROM technology: 0.6, 0.36,
0.18 μm24. Meanwhile, ELVEES R&D Centre offers IC design services with topological level of
CMOS 65-250nm.
JSC Mikron (Zelenograd) has recently completed a 200 mm project (0.18um CMOS EEPROM) - all
the equipment has been installed and production has been launched. JSC Mikron’s current
project is dedicated to setting up commercial 90-nm IC production in Russia25. Work to upgrade
up to 90 nm is going on and a joint venture agreement has been signed with RusNano as well as
a process license agreement with ST Microelectronics (France). Production launch (test wafers)
is planned for Q4 2010 / Q1 2011.
Angstrem-T (Zelenograd) is also involved in a 130nm project26. The organisation has bought the
technological equipment from AMD (USA) and plans to implement it by the 2011. Currently,
they are working on the Angstrem -T restructuring project aimed at increasing the technology
level up to 90 nm.
24
Materials from the first SEMIDEC event, 20-21 September 2010, St. Petersburg, Russia
http://www.rusnano.com/Post.aspx/Show/18622
26
http://www.zelenograd.ru/news/view.php3?id=4617
25
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Co operation
Russian organizations successfully cooperate with world renowned microelectronics companies
such as Freescale Semiconductor (USA), STMicroelectronics (France), Infineon (Germany), XFAB
(Germany), LFOUNDRY (Germany) and Semiconductor Manufacturing International (Shanghai)
Corp. Russian organizations use software from these world leaders for IC design (e.g. Synopsys,
Cadence, Mentor) and modelling as well as use their foundry facilities. For example, SaintPetersburg State Polytechnical University realized a Switched-Capacitor Filter project in
cooperation with Austria Microsystem Inc. Similarly, IDM-plus (Zelenograd) has contacts to
Semiconductor Manufacturing International (Shanghai) Corp. and X-FAB (Germany) for
developing chip production.
Market demand
Russian-made microchips are being produced for smart cards integrated into electronic
traveller’s passports, driving licenses and vehicle registration certificates, bank and social cards,
mobile phones SIM-cards, and RFID chips. The integrated circuits being manufactured will also
be used in GPS devices and digital set-top boxes that utilise Russia’s global navigation satellite
system (GLONASS)27.
27
http://www.gpssoft.ru/fcp_glonass.html
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2.2
SYSTEM ON A CHIP (SOC)
Geographical situation
The geographical spread of organisations working with SoC is
wide: St. Petersburg, Moscow, Voronezh, Zelenograd and
Vladimir. This area of activity is very closely connected to IC
design and FPGA.
Technologies
Russian organisations can design SoC chips with rules 0.045, 0.065, 0.09, 0.13, 0.18 and 0.25
μm28. The technological processes, they use in SoC design, are CMOS and BiCMOS. The
semiconductor materials they use for SoCs are Si and SiGe.
For example, the Russian organisation “Digital Solutions” (Moscow) pays special attention to
solving different problems using SoC which are functionally flexible. The company works with
semiconductor materials on the basis of silicon (Si). Meanwhile, the Institute of Electronic
Control Machines (Moscow) also works in the SoC design area with technological rules 0.045,
0.065 and 0.09 μm.
Co operation
The organizations cooperate with Russian, European, American and Asian production
companies. It includes global companies such as Freescale Semiconductor (USA),
STMicroelectronics (Switzerland), Infineon (Germany), XFAB (Germany), LFOUNDRY (Germany),
Chartered Semiconductor (Singapore) and Semiconductor Manufacturing International
(Shanghai) Corp.
Market demand
In Russia, demand is being driven by the Ministry of Industry and Trade of the Russian
Federation’s endorsement of a national programme to produce novel ICs for digital television
receivers using design rules 90-65 nm. The chip production will be realized by JSC “Elecard
NanoDevices” (Tomsk), JSC “MNITI” (Moscow research television institute), and JSC “Mikron” in
the framework of the RusNano project “Multimedia multiprocessor systems on chip”29.
28
29
Materials from the first SEMIDEC event, 20-21 September 2010, St. Petersburg, Russia
http://www.rusnano.com/Post.aspx/Show/26827
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2.3
SILICON-ON-INSULATOR (SOI)
Geographical situation
The development of silicon-on-insulator technology is concentrated in the
centre of Russia in Moscow and Zelenograd. "Technological Centre" MIET,
JSC PKK “Milandr”, Research Institute of Material Science and Technology
and Research Centre "Module" are amongst several organisations
offering IC design services based on SoI technology.
Technologies
SoI chips can be designed with technological rules 0.13, 0.18, 0.25, 0.35
and 0.5 μm and utilising CMOS technology30. For this reason, the
technologies used by Russian organisations correspond closely to those also used in the IC
design area.
Cooperation
JSC “Syntez Microelectronics” (Voronezh) provides foundry services to Wafer Foundry Fabs in
Asia, Europe and the USA according to a door-to-door scheme (shaping of the customer’s
technical requirements, granting access to libraries and design manuals, conclusion and further
maintenance of contracts with the foundry fab in our own name, providing communication
between the customer and the foundry fab). Their partners include Austria Microsystems, China
Resources Semiconductor, EPISIL (Taiwan), Freescale Semiconductor (USA), LFoundry, X-FAB
(Germany) and others. Most fabless Russian companies work in cooperation with these world
semiconductor design leaders.
Market demand
Demand in Russia is being driven by the federal targeted programme “Development of the
electronic component base and radioelectronics 2008-2015”31 which is supporting research in
the direction of “Radiation-resistant electronic components”. This specific programme aims to
develop:
• Base design technology using radiation-resistant specialized LSIs with the level of 0.50.35 μm based on SoI structures
• Design and production technologies for logic and analogue radiation-resistant devices
based on SoI with the design level 0.25-0.18 μm.
30
31
Materials from the first SEMIDEC event, 20-21 September 2010, St. Petersburg, Russia
http://www.fasi.gov.ru/fcp/electro/
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2.4
PHOTONICS
Geographical situation
Organisations working in photonics are situated across many cities of
Russia, for example, Tomsk, Moscow, Zelenograd and St. Petersburg.
Altogether, there are about 800 Russian organisations involved in
R&D related to laser equipment, optics and optoelectronics.
There are many special research topics in photonics: imaging and
metrology, optic components and systems, lighting, production
engineering, power engineering and ICT. Usually, research
organisations are specialised in more than one specific field of photonics. For example, MEPhI
Photonics Centre in Moscow is focussed on laser effects, photonics for medical applications, and
photonic methods for high energy physics. On the other hand, the St. Petersburg optical
industry is focussed on LED design, design and production of lighting for auto and rail transport,
optics of nanostructures, and investigation of three-dimensional holograms.
Technologies
Photonics, like other branches of microelectronic, relates very closely to fundamental
semiconductor technologies. Lasers, LEDs and optical filters tend to be silicon-based.
Co operation
Russian organizations participate extensively in international research projects. For example,
under the FP7 ICT programme, there are currently two photonics projects involving Russian and
EU partners. Firstly, “Vertically integrated systems for information transfer” (FP7 VISIT) involving
Ioffe Physical-Technical Institute of the Russian Academy of Sciences (St. Petersburg) and,
secondly, “Network of excellence for biophotonics” (FP7 PHOTONICS4LIFE) involving Saratov
State University. It means that Russia is cooperating with the main European research centres in
this area: Institut für Photonische Technologien (IPHT) of the Technische Universitaet Berlin
(Germany); Centre National de La Recherche Scientifique (France); and Lunds Universitet
(Sweden).
Contacts also exist with the International Commission for Optics, European Photonic
Association, Muenster University (Germany), Tohoku University (Japan), Louis Pasteur
University (France) and Pennsylvania State University (USA).
Market demand
The demand for photonics technology is very wide because photonics covers many research
directions such as lighting, signal devices, industrial lighting, material laser cutting, laser range
finders, telecommunications and medicine.
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2.5 MEMS AND NEMS
Geographical situation
Organisations working in MEMS and NEMS design areas can be
found in St. Petersburg, Moscow, Zelenograd, Vladimir and Tula.
MEMS production is mainly located in IC-foundry centres in
Zelenograd. MEMS R&D is being carried out by MIET, SPbSTU,
Tula State University and Institute of Applied Chemical Physics of
Russian Scientific Centre “Kurchatovsky Institute”, amongst
others.
Technologies
Usually MEMS are designed in accordance with CMOS and BiCMOS technologies. Consequently,
the design rules are the same as those used for CMOS technology in IC design.
Co operation
Russian organisations are involved in several FP7 projects related to MEMS/NEMS. For example,
the Siberian State University of Telecommunications and Informatics is involved in the
GAKO2007CA project, which aims to develop multiscale methods in the planning of nano
MEMS. Also, Ioffe Physical-Technical Institute of the Russian Academy of Sciences (St.
Petersburg) is involved in the FP7 MINIGAS project, which aims to develop a miniaturised
photoacoustic gas sensor based on patented interferometric readout and novel photonic
integration technologies and involves research partners from Norway, Finland, Romania, Italy
and UK.
Market demand
MEMS and NEMS technology is highlighted in the Russian government scheme “Programme of
nanoindustry development for the Russian Federation”32, which is part of the strategy of
Russian electronics industry development until 2020 that has been developed by the Ministry of
Industry and Energy. The specific technology highlighted includes inertial sensors,
micromachined pressure sensors, surface micromachined devices, microscale vacuum pumps,
reactive control for skin-friction reduction, and microchannel heat sinks.
32
http://www.portalnano.ru/files/229
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2.6 FPGA
Geographical situation
Fabless companies are located in St. Petersburg, Zelenograd, Moscow,
Vladimir, Nizhny Novgorod and Omsk. Meanwhile, foundries can be
found in Voronezh (JSC "Voronezh's factory of semiconductor devices assembly") and Zelenograd (JSC "Mikron" and JSC "Angstrem"). FPGA
technology has very close connections with SoC technology, because
the latter is often based on FPGA.
Technologies
Russian organisations can design FPGA chips with technological rules
0.13, 0.25, 0.35, 0.5 and 0.8 μm.
Co operation
Currently, the main area of cooperation is in marketing relationships: Russia buys FPGA chips
from foreign producers and realizes projects based on their component base. Russia orders
FPGA chips from American companies such as Altera, Xilinx, Actel and Atmel.
An international collaboration project is currently underway involving teams from Russia and
Belarus called SKIF-AURORA (2008–2010)33, which aims to develop a family of top-level
supercomputers using advanced CPUs for computation and FPGAs for its acceleration. The
responsibility of the Russian organizations includes programming FPGAs produced by foreign
foundries.
Market demand
The area of FPGA applications is large. However, the vast majority of FPGA are currently
imported to Russia from the USA. Nevertheless, Russian produced FPGA are competitive enough
to be implemented in a wide variety of enterprise applications: medical, telecommunication,
audio equipment; automotive, measurement and database systems.
33
http://skif.pereslavl.ru/psi-info/psi/psi-ppt.eng/2009/2009-10-02-abramov-skif-aurora-project.ppt
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2.7 RFID
Geographical situation
Organisations working in RFID production are concentrated in
Zelenograd near Moscow. Currently, there is a major new project
supported by RusNano to establish an RFID-foundry in St. Petersburg
with design rules of 90 nm34. Fabless RFID design organisations can be
found in St. Petersburg, Moscow, Voronezh and Zelenograd.
Technologies
Russia’s main RFID production facilities are based at JSC “Mikron” in
Zelenograd, which has a design level of 180 nm. Meanwhile, AngstremT (Zelenograd) is involved in establishing a 130nm foundry . The organisation has bought the
technological equipment from AMD (USA) and plans to implement it by the 2011. Furthermore,
projects are also underway to establish 90 nm foundries in Zelenograd and St. Petersburg.
Co operation
RusNano and the Italian company Galileo Vacuum Systems s.p.a. are members of a joint project,
which aims to establish high technology production of RFID-tags for goods calculation in
warehouses and trade organizations35.
Meanwhile, the EU funded GRIFS project “Global RFID interoperability forum for standards”
aims to develop global RFID interoperability standards and involves organisations from Europe,
Russia, China, Japan, Korea and USA36.
Market demand
RFID-tags usage is becoming ubiquitous: shops, hospitals, factories and warehouses to name but
a few arenas. For example, JSC “Mikron” produces RFID-tickets based on 0.18 μm design rules
for rock concerts, football matches, and metro/buses in St.Petersburg.
34
http://www.cnews.ru/news/top/index.shtml?2010/03/24/384066
http://www.rusnano.com/Post.aspx/Show/15823
36 GRIFS Project, http://www.grifs-project.eu
35
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2.8 SENSORS
Geographical situation
Russian organisations produce microelectronics based sensors for
a wide range of applications. Over 1200 types of inductive,
optoelectronic and capacitive proximity switches are produced
for factory and process automation markets. For this reason,
sensor organisations can be found all over Russia: St. Petersburg,
Moscow, Voronezh, Zelenograd, Yekaterinburg, Penza and
Obninsk.
Technologies
It is difficult to single out any particular technology for sensor production, because all of them
are specialized cells that are sensitive to:
• Light, motion, temperature, magnetic fields, gravity, humidity, vibration, pressure,
electrical fields, sound, and other physical aspects of the external environment;
• Physical aspects of the internal environment, such as stretch, motion of the organism,
and position of appendages (proprioception);
• Environmental molecules, including toxins, nutrients, and pheromones and others.
Co operation
Russian R&D organizations participate in many international projects in direction of sensors. A
good example is the FP7 MINIGAS project involving Ioffe Physical-Technical Institute of the
Russian Academy of Sciences (St. Petersburg), which aims to develop a miniaturised
photoacoustic gas sensor based on patented interferometric readout and novel photonic
integration technologies and involves research partners from Norway, Finland, Romania, Italy
and UK37.
Market demand
Applications include cars, machines, aerospace, medicine, manufacturing and robotics, smoke
detectors, ambient intelligence systems and special branch directions (food industry,
shipbuilding, hydraulic actuators and systems). The market for intelligent sensors is increasing
following rising demand in Europe.
37
http://cordis.europa.eu/fetch?CALLER=FP7_PROJ_EN&ACTION=D&DOC=1&CAT=PROJ&QUERY=0129b24dbefb:f1d3:4c4ae984&RCN=86683
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3.
OPPORTUNITIES FOR RUSSIA TO PARTICIPATE IN EUROPEAN IC ACTIVITIES
3.1 IC DESIGN TRENDS IN EUROPE
At the start of the 21st century, the dominant electronics trend is towards what is called
Ambient Intelligence. Ambient intelligence is a vision of the future of consumer electronics,
telecommunications and computing originally developed in the late 1990s for the time frame
2010–2020. In an ambient intelligence world, devices work in concert to support people in
carrying out their everyday life activities and tasks in an easy, natural way using information and
intelligence that is hidden in the network connecting these devices. As these devices grow
smaller, more connected and more integrated into our environment, the technology disappears
into our surroundings until only the user interface remains perceivable by users.
Ambient Intelligence38
A variety of technologies can be used to enable Ambient Intelligence environments such as:
•
•
•
•
•
•
38
RFID
ICT
Sensors
Software agents
Nanotechnology
Biometrics
El futuro del marketing: los entornos inteligentes”, Jueves 14 May 2009
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Opportunities for Russia to Participate in European IC Activities
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The market demand is growing very rapidly to have Ambient Intelligent environments. But the
realization of intelligence systems can be possible only with an evolution in the performance of
chips and ICs. Of course, everybody knows of the famous Moore’s law. It states that the number
of transistors that can be placed on an integrated circuit will double approximately every two
years. It started from a technological level of about 25 microns with the first ICs and it is now in
full production at a level of 44 nm. On the area of a single transistor from the 1970s, we can
place today 40 000 transistors. It is a very impressive increase. It started from around 10
components on a single chip and has progressed to billon components on a single chip today.
Therefore, with this very quick evolution of the performance of the ICs design, it is clear that
chip performance has increased in terms of speed, integration density and SoC capability.
However, the same dramatic increases have also been witnessed in:
• Costs for accessing the latest Si technology, especially for prototyping, are rising very
sharply;
• Circuit level/system level design complexity because a lot of effects are appearing at the
circuit and system level;
• Costs of advanced CAD tools;
• CAD tool complexity (set-up, use / maintenance).
The trend in cost of establishment of industrial production is a kind of extension of Moore’s law.
Exponential Growth of Computing39
39
Moore's Law”, Paul Kedrosky,·22 Jan 2010, http://paul.kedrosky.com/archives/2010/01/moores_law_then.html
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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About $5 billion are required today to establish a full production unit for the latest CMOS
technology. Consequently, there are very few production plants around the world. Today, most
of the fabs are situated or being transferred to Asia.
Also, technological physical limits are in sight today for CMOS technology. As a result, there are
three major directions of R&D development being explored:
Directions for R&D development40
• More Moore: pushing current CMOS technologies up to the design limit of Moore’s law,
• More than Moore: putting in a single chip more than just standard CMOS components,
• Beyond CMOS: using nanotechnologies.
More Moore
It can be characterized by pushing CMOS up to its extreme technological &physical limits:
•
•
•
•
Very complex technologies;
New materials: low-k, high-k dielectrics;
New component architectures;
New circuit design techniques to be developed: Sub - 1V, static leakages, dispersion of
characteristics;
• New system-level architectures (redundancy, reliability);
• Very expensive development and prototyping costs.
The solving of these problems is relevant for:
• Very large production volumes
• Applications with cutting-edge specifications
 Microprocessors
40
“Strategic Research Agenda - First full edition”, Fred van Roosmalen, ENIAC Forum of Stakeholders, Barcelona, 23 Nov 2005
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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 Memories
 Complex signal processing
• Mainly digital applications
Considering the fact that most Silicon foundries are migrating to Asia, the European
microelectronic industry is becoming increasingly fabless. Nevertheless, it is crucial to maintain
leadership in circuit and system design. To maintain technological leadership requires experts to
have a deep scientific knowledge and continuing education. By doing this, it will be possible to:
• Maintain technological know-how;
• Master physical limits and second order phenomena at a deep-submicron level;
• Master advanced device design and modelling;
• Master innovative circuit design technologies (sub-1V analog, RF, etc);
• Develop innovative system-level architectures (fault-tolerant, ultra-low power systems)
More than Moore
More than Moore explores a new area of micro/nanoelectronics, which reaches beyond the
boundaries of conventional semiconductor technologies and applications, creating and
integrating various non-digital functionality to semiconductor products. More than Moore
focuses on creating high value micro/nanoelectronics systems, motivating new technological
possibilities and unlimited application potential.
It requires integrating in one single chip or package much more than basic CMOS. Many
applications such as radio frequency (RF) devices, power management subsystems, passive
components, biochips, sensors, actuators and microelectromechanical systems (MEMS) play an
equally important role in today’s semiconductor products. Integrating analogue functions into
CMOS-based specialty technologies enables cost-optimized and value-added system solutions.
These diversified technologies are known as “More than Moore.”
More than Moore41
41
What is “More than Moore”?“, X-FAB
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More than Moore devices comprise of complex systems SoC and SiP with the following types of
features integrated into them:
•
•
•
•
•
•
•
•
•
•
•
•
CMOS logic
Embedded RAM
Analog interfaces
Power output
Non-volatile memory
Analog RF& RF MEMS
Digital Signal Processing
Evergy Scanvenging& power management
On-chip HV Generation
Micro cores
Software
MEMS Sensors & actuators
The integrated systems and heterogeneous systems open new perspectives for a wide range of
applications:
•
•
•
•
•
•
•
•
•
•
Security
Mobility
Communication
Health
Quality of life - improved autonomy for the elderly
Environment& sustainable development
Leasure
Domotics
Bio-medical
Energy
There is a huge market, which is still growing very rapidly, based on More than Moore
technology. More than Moore technology is a key domain for Europe since Europe already has
the following pre-requisites:
•
•
•
•
State-of-the-art R&D facilities
Technology and foundries
Rapidly growing markets and application domains
More than Moore is fully in phase with the trend towards "Ambient Intelligence"
Furthermore, Europe has various different European Technology Platforms (ETPs) and Networks
of Excellence (NoEs) that support More than Moore developments. For example,
EUROPRACTICE plays a central role in keeping education at its highest level in IC design.
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Beyond CMOS
The International Technology Roadmap for Semiconductors predicts that the minimum feature
size of silicon CMOS technology will approach 20 nm as early as 2010. As silicon CMOS
technology scales beyond these dimensions, new device structures and computational
paradigms will be required to replace and augment standard CMOS devices for ultra large scale
integrated (ULSI) circuits. These possible emerging technologies span the realm from transistors
made of silicon nanowires to devices made of nanoscale molecules. One theme that pervades
these seemingly disparate emerging technologies is that the electronic properties of these
nanodevices are extremely susceptible to small perturbations in structural and material
properties, such as dimension, structure, roughness, and defects. The extreme sensitivity of
electronic properties to nanoscale physical properties defines a significant need for precise
metrology as well as computational tools for nanoscale materials and devices.
Technologies
The following is an assessment of existing technologies for More Moore and More than Moore.
More Moore:
• Low cost access models to deep sub-micron CMOS
More than Moore: a large palette of technologies covering a wide spectrum of applications
•
•
•
•
•
•
CMOS High-Voltage
SiGe & CMOS RF
CMOS Opto
MEMS
3D Packaging
Smart System Integration
Developments in these two directions are also supported by:
•
•
•
•
•
Access to IP's libraries
Prototyping, low volume, high volume
Design, testing and packaging support
Low cost access to state-of-the-art CAD tools
Educational support: links with EUROPRACTICE, EUROTRAINING, IDESA and others.
Training and Education
A basis for effective development is a triangle of knowledge: Education – Innovation – Research.
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Knowledge Triangle
Schools provide new competences and learning habits which provide the opportunity for
further development of established skills as well as the development of new skills. This in turn
increases job opportunities. The European Council has constantly stressed the importance of
education and training in the long term plans of the Union. The achievement of such goals
depends on the acceleration of reforms, further excellence in higher education and the
promotion of creativity and innovation in all aspects of education and training.
Europe pays a lot of attention to education and human resource development for the hightechnology and semiconductor areas. For example, Master degree programmes often include
the following elements:
Analogue circuit design
HF&VHF circuits and techniques
Advanced analogue and RF IC design
VLSI Design
Integrated System Design
Hardware Systems modelling
Test of VLSI Systems
EDA-BASED Design Labs
IC Design Projects
Electronic Devices
Nanoelectronics
In the educational and industrial processes, the following CAD tools are mostly used42:
• Cadence Tool Suite
• Synopsys Tool Suite
• Mentor Tool Suite
42
“A passport for the future of IC design in Europe”, Prof. Michel Declercq, Ecole Polytechnique Fédérale de Lausanne, EUROPRACTICE
Conference, 17 Sep 2009, http://mediasite.imec.be/mediasite/Viewer/Viewers/Viewer320TL.aspx?mode=Default&peid=23c9efcb-fe66-4c83b556-3c0c1f5200ea&pid=a157f4bc-2816-42f0-b711-3256ff4fbdce&playerType=WM7
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3.2 EUROPEAN R&D FRAMEWORK PROGRAMMES
The FP7 SEMIDEC mapping exercise revealed that Russian organisations are eager to participate
in the semiconductor R&D projects funded under the Seventh Framework Programme (FP7).
However, there have been relatively few examples of such participation to date. Nevertheless,
the following are examples funded under the Sixth Framework Programme (FP6).
FP6 DELILA - Development of lithography technology for nanoscale structuring of materials
using laser beam interference43. DELILA is a recently completed 3 year project that involved the
Institute of Applied Physics of the Russian Academy of Sciences (IAP). The main aim of the 2m
euro funded project was to research and develop a new production technology for the high
resolution fabrication – better than 40nm - of 2D and 3D nanostructures and devices. In
particular, DELILA aimed to enable low cost and large volume production of surface structures
and patterns with nanometric resolution. During the project, IAP had lead responsibility for the
development of the multiple beam interference lithography technology. And, using the new
system, the DELIA team was able to successfully fabricate high resolution nanostructures with
feature sizes of ~30nm for direct writing as well as modifications of ~5nm.
FP6 SEMINANO – Physics and technology of elemental, alloy and compound semiconductor
nanocrystals, materials and devices. The main aim of SEMINANO was to develop fundamental
knowledge in production techniques, characterization and methods of application of
semiconductor Nan crystals to light emitting devices and floating gate memories. The project
was broken down into 3 main areas: 1) Preparation of Is and Gee Nan crystals in different media
and processed by various techniques; 2) Production and characterisation of some alloy and
compound semiconductor Nan crystals; and 3) Application of the materials studied in the first
two areas to the devices mentioned above. Led by the Middle East Technical University (Turkey),
the project consortium included Moscow-based Surface Phenomena Research Group LLC (SPRG)
who were deeply involved in optimisation of the annealing parameters and luminescence
properties of P, B, N doped SiO2:Si nanocomposite and P, B doped Al2O3:Si nanocomposite.
FP6 DOMINO - Antimonide quantum dots for mid-infrared nano-photonic devices. The main
objective of the DOMINO project was to demonstrate the feasibility of antimonides-based
quantum-dots (QDs) in nano-photonic quantum-dots laser diodes (QDLDs) operating continuous
wave at room temperature in the 3-5m wavelength range. Université Montpellier II (France)
coordinated the project with the support of nine partners – from five countries – including the
Ioffe Physical Technical Institute of the Russian Academy of Science. Ioffe was in charge of all indepth scanning probe microscope studies of QDS populations. Notably, Ioffe applied recently
developed scanning kelvin probe microscopy (SKPM) and electric force microscopy (EFM)
techniques whilst performing the studies.
43
FP6 DELILA, http://www.delila.cf.ac.uk
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3.3 EUROPEAN TECHNOLOGY PLATFORMS AND NETWORKS OF EXCELLENCE
A European Technology Platform (ETP) is a European network that brings together researchers,
industry and other relevant stakeholders in a particular technological field in order to foster
European research and development in the concerned area.
European Technology Platforms provide frameworks to define research and development
priorities, timeframes and action plans on different strategically important issues. Some
European Technology Platforms have become engaged in public-private partnerships, the Joint
Technology Initiatives, further contributing to the renewed Lisbon Strategy and to the
development of a European Research Area of knowledge for growth. They are proving to be
powerful actors in the development of European research policy, in particular in orienting the
Seventh Research Framework Programme to better meet the needs of industry. What is more,
ETPs mobilise public authorities at national and regional levels.
Network of Excellence (NoE) are medium-sized research projects funded by the European
Commission in the Sixth and Seventh Framework Programmes (FP6 and FP7). NoE projects are
designed to strengthen scientific and technological excellence on a particular research topic
through the durable integration of the research capacities of the participants.
NoE projects are provided grants for a maximum of seven years. The budget granted by the
Commission is one to six million euro per year depending upon the number of researchers
involved. An NoE project should not really be considered as a research project, since its aim is
not to conduct research, but rather to contribute to the clarification of the concepts in the
covered field.
Although ETP and NoE are potentially very interesting for Russian semiconductor organisations,
there are very few examples with Russian members44. Russian organisations need to make a
concerted effort to join. Firstly, they should identify which ETP/NoE are relevant to them by
reviewing the ETP/NoE membership lists and their R&D projects. Secondly, they should make a
convincing application explaining what their contribution/benefit could be. Their application will
be strengthened if supported by the nomination of an existing member.
The following is a list of European Technology Platforms, Networks of Excellence and some
other examples of EU funded projects relevant to semiconductor design.
44
FP7 SEMIDEC Mapping Exercise of Russian Semiconductor Organisations, First Half 2010
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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№ Name
1
2
3
4
5
6
1
2
3
1
2
3
4
Start Date End Date
More information
European Technology Platforms
ENIAC
2004
Indefinite
Technology Platform for
Nanoelectronics
ARTEMIS
2007
Indefinite
Advanced Research &
Technology for Embedded
Intelligence and Systems
PHOTOVOLTAIC
2005
Indefinite
Technology Platform for
photovoltaic
PHOTONICS21
2005
Indefinite
Technology Platform for
photonics
EPoSS
2006
Indefinite
Technology Platform on Smart
Systems Integration
EuMaT
2004
Indefinite
Technology Platform for
Advanced Materials and
Technologies
Existing EU funded Networks of Excellence relevant to Semiconductor Design
EUROSOI
2003
Indefinite
Thematic Network on Silicon-onInsulator Technology, Devices
and Circuits
NANOICT
2008
2010
Nano-scale ICT Devices and
Systems Instrument
Coordination Action
EUROPRACTICE
1989
Indefinite
European service-type projects
in the Microsystems and
Microelectronics fields
Other EU funded Projects relevant to Semiconductor Design
DOTFIVE
2008
2011
Individual Devices and
Integrated Circuits with higher
operating speed allowing
realization of new applications in
new regions of the
electromagnetic spectrum
R&D ACCESS
2009
2012
Access to research results on
semiconductor design
SOFI
2010
2012
Silicon-Organic hybrid
Fabrication platform for
Integrated circuits
POLARIC
2010
2013
Printable, organic and large-area
realisation of integrated circuits
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№ Name
5 EUROPIC
Start Date
2009
End Date
2012
More information
European manufacturing
platform for photonic integrated
circuits
6 D-DOT FET
2005
Indefinite
Disposable Dot Field Effect
Transistor for High Speed Si
Integrated Circuits
7 HISTORIC
2008
2011
Heterogeneous InP on silicon
technology for optical routing
and logic
8 COSMIC
2010
2013
Complementary organic
semiconductor and metal
integrated circuits
9 MEMS-4-MMIC
2008
2011
Enabling MEMS-MMIC
technology for cost-effective
multifunctional RF-system
integration
10 REALITY
2008
2010
Reliable and variability tolerant
system-on-a-chip design in
more-Moore technologies
11 SYNAPTIC
2009
2011
Synthesis using Advanced
Process Technology Integrated in
regular Cells, IPs, architectures,
and design platforms
12 NANOC
2010
No info
Nanoscale Silicon-Aware
Network-on-Chip Design
Platform
FP7 NMP Project funded jointly with the Russian Federation
1 SELFMEM
2009
2012
Self-assembled polymer
membranes
2 DOUBLENANOMEM
2009
2012
Nanocomposite and
nanostructured polymeric
membranes for gas and vapour
separations
3 NEPHH
2009
2012
Nanomaterials-related
environmental pollution and
health hazards throughout their
life-cycle
Extensive details about the ETP and NoE, including how to join them, can be found in
Appendix D and Appendix E.
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50
4.
INTELLECTUAL PROPERTY AND EU-RUSSIA SEMICONDUCTOR COOPERATION
Intellectual property rights - very broadly - are rights granted to creators and owners of works
that are the result of human intellectual creativity. These works can be in the industrial,
scientific, literary or artistic domains. They can – for example - be in the form of an invention, a
manuscript, a suite of software, or a business name.
In general, the objective of intellectual property law is to grant the creator of a work certain
control over the exploitation of that work, as the unfettered ability of others to copy the work
or invention may deprive the creator of reward and incentive. For some intellectual property
rights, the grant of protection is also in return for the creator making the work accessible to the
general public. Intellectual property law maintains a balance by (in most cases) granting the
rights for a limited time. Some rights require registration, for example, patent right, whilst other
rights accrue automatically upon the work's creation as in copyright.
The objects of copyright certificates include software, IC’s topologies and databases. Copyright
law fulfils a decisive role in articulating the contributions and rights of the different stakeholders
taking part in the cultural industries and the relation between them and the public.
4.1 INTELLECTUAL PROPERTY ORGANISATIONS AND TREATIES
The main world and European organizations dealing with intellectual property, rights protection
and transfer are:




World Intellectual Property Organization (WIPO)45
European Patent Organisation (EPO)46
European Intellectual Property Institutes Network (EIPIN)47
Eurasian Patent Organization (EAPO)48
In Russia, the Federal Service for Intellectual Property, Patents and Trademarks (Rospatent)49 is
responsible for intellectual property rights protection.
Russia’s most important laws concerning intellectual property are:
• Civil code of Russian Federation Part 4 Chapter 72 “Patents right”
45
World Intellectual Property Organization (WIPO), http://www.wipo.int
European Patent Organisation (EPO), http://www.epo.org
47 uropean Intellectual Property Institutes Network (EIPIN), http://www.eipin.org
48 Eurasian Patent Organization (EAPO), http://www.eapo.org
49 Federal Service for Intellectual Property, Patents and Trademarks (Rospatent), http://www1.fips.ru
46
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• Federal Law “About the bases of state regulation of foreign trade“
• Federal Law “About the state secret”
Russia is a member of the following important intellectual property treaties:
•
•
•
•
•
Locarno Agreement an International Classification for Industrial Designs
Patent Cooperation Treaty (PCT)
Strasbourg Agreement (Concerning the International Patent Classification)
Patent Law Treaty (PLT)
Paris Convention for the Protection of Industrial Property
Further details about Russia’s membership of such treaties can be found in Appendix B.
Notably, Russia is not a member of the following important intellectual property treaties:
• Washington Treaty on Intellectual Property in Respect of Integrated Circuits
• Agreement on Trade-Related Aspects of Intellectual Property Rights
• Hague Agreement (Concerning the International Registration of Industrial Designs)
Due to the complex legal issues surrounding the transfer and protection of intellectual property
for the EU and Russia, a one year, EU-funded project “Approximation of EU and Russian
Federation Intellectual Property Right aspects” was started in November 2009. The main
objective of the project has been to examine current Russian patent legislation and make
recommendations on how to converge it with European legislation as well as to develop patent
guidelines that can be used by patent examiners at “Rospatent”. The project has also sought to
streamline Russia’s patent application, registration and processing procedure and to
approximate them to the EU approach and facilitate the teaching of intellectual property
economics in Russia.
4.2
INTELLECTUAL PROPERTY OWNERSHIP AND RIGHTS
We summarise here the main principles for intellectual property ownership and rights from the
EU and Russia perspectives.
The main principles with regard to participation in EU funded collaborative R&D projects are as
follows:
 Foreground resulting from the project is owned by the participant generating it. When
foreground is generated jointly (i.e. where the separate parts of some result cannot be
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attributed to different participants), it is jointly owned, unless the participants
concerned agree on a different solution.
 In addition, participants must ensure that, where necessary, they reach an agreement
with their employees and other personnel if the latter are entitled to claim rights to
foreground (including third parties such as subcontractors, students, etc.), in order for
the participant to be able to meet its contractual obligations. Such agreements may for
instance involve a formal transfer of ownership, or at least the granting of appropriate
access rights (with a right to sublicense).
 For academic institutions, this is especially relevant regarding:
1) "non-employees" such as students (both undergraduate and postgraduate, e.g. PhD
students), and
2) researchers in those countries having a specific type of "professor’s privilege" regime
(according to which the researchers concerned may have some personal rights to the
results of university research).
Nevertheless, it can be challenging for European organisations to deal with intellectual property
ownership and rights issues arising from EU funded R&D projects, because the projects often
require working with competitors in large consortia50.
In Russia, the main principles with regard to intellectual property ownership and rights are as
follows:
 Intellectual property rights differ according to the type of agreement.
 If it is a research activity involving two parties, it means that there is a concerted,
coordinated action to achieve a common goal. In this case, the results are the common
intellectual property of both parties.
 If it is a contractor’s agreement, it means that each side has its own interests. But the
duty of consumer and executor is to keep confidential information, including knowledge,
which is not protected by legislation about trade secret. Prerogative rights are not
determined for both sides by law. That is why all details of ownership have to be clarified
in the special agreement.
However, in practice, Russian semiconductor design organisations that work with European
companies usually accept an offer and all EU terms concerning intellectual property transfer.
For IC design projects, it means that IC topologies designed by a Russian partner are owned
50
Interviews with European semiconductor experts, SEMIDEC event, 20-21 September, St. Petersburg
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exclusively by the European customer. However, if it is an R&D project, there can be special
conditions included in the contract signed between the Russian and European participants.
4.3
INTELLECTUAL PROPERTY TRANSFER
The five main phases of intellectual property transfer are shown in the figure below. The process
starts with strategy and goal definition and ends with contract completion. Legal aspects play an
important role already in the strategy and goal definition phase. Depending on the specific
objectives of cooperation there are different aspects to consider for contract execution. Also,
country-specific regulations can play a critical role.
Main Phases of Intellectual Property Transfer
The phase of preparing and beginning a contact involves an initiating organisation identifying the
competences it seeks in a partner organisation and assessing the collaboration risks. Information
about the partnering organisation’s country, legal norms and export control systems is also
accumulated and analyzed. The next step is to invite the potential partner organisation to a first
negotiation meeting. It is essential to clarify early on the next main points of the contract:
• The agreement type,
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•
•
•
•
•
•
The branch, which the agreement belongs to,
Existence of international agreements in the bounds of cooperation,
Conditions of the international agreements, including rights allocation,
Volume of work for every partner,
The territory of common project realization,
Investment by the partners in the project.
In the case of contracts involving trade secrets, it is important to include in the contract rules
some confidentiality clauses to protect the partners’ intellectual property.
On the basis of the gathered information, the partners make a decision whether or not to
establish a common project. After signing of the contract, the cooperation project begins.
Usually the stage of co-operation has a fixed duration. In most cases, the Russian partners are in
a comparatively weak bargaining position and obliged to accept the contract requirements of
the European partner51.
During execution of a contract, it is essential to control intermediate results and ensure
compliance with any deadlines. Clearly, the main goal of any collaboration is to achieve
successful results and unanimous agreement.
The earlier diagram captures accurately the process of co-operation between Russian SMEs and
European private enterprises and private orders. However, in the case of Russian State
organisations, considerable administrative and legislative hurdles also need to be crossed. The
main reason for this is often due to the State organisation being a supplier to the military, which
raises issues of dual-use and import/export control. In such instances, many Russian State
organisations opt not to work with foreign companies to avoid difficulties52.
4.4
EXPORT CONTROL
From the point-of-view of international collaboration between Russia and the EU, special
attention must be paid to the nature of the research and technology development: is it
uncritical (household devices, food, wear), critical (weapon, ammunition) or dual-use
(technologies which can be used for both peaceful and military aims).
Before Russian and European organisations can collaborate on research or technology that has a
dual-use nature, the work must be permitted by their respective export control authorities.
From the EU perspective, the export, transfer, brokering and transit of dual use items are
51
52
Interviews with Russian semiconductor experts, SEMIDEC event, 20-21 September, St. Petersburg
Interviews with Russian semiconductor experts, SEMIDEC event, 20-21 September, St. Petersburg
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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controlled at Community level by Council Regulation (EC) No. 428/200953. DG Trade of the
European Commission54 is the EU organisation at the centre of export control related issues.
Under the EU regime, controlled items may not leave the EU customs territory without an export
authorisation. Additional restrictions are also in place concerning the provision of brokering
services with regard to dual-use items and concerning the transit of such items through the EU.
From the Russian perspective, Article 8 of Russia's law On Export Control55 broadly defines the
duties of governmental entities in the sphere of export control. The Department of Export
Control of the Ministry of Economic Development and Trade56 is the country's lead export
control agency; it issues licenses for the export of dual-use and critical nuclear materials.
Meanwhile, the President and the Export Control Commission57 also play significant roles in the
export control system.
For collaboration on research and technology development involving international partners to
be successful, international laws and agreements need to be respected. Unfortunately, this is
always the case as the following figure illustrates from the perspective of the German Ministry
for Education and Research (BMBF).
Frequency and severity of violations of international R&D agreements58
Light blue circles – private companies
Light green circles – public research institutions
In fact, Russian companies belong to a relatively low risk group for violation of international
R&D agreements. Certainly, less risk posed than US companies and research institutions.
53
http://ec.europa.eu/trade/creating-opportunities/trade-topics/dual-use
http://ec.europa.eu/trade
55 http://www.nti.org/db/nisprofs/russia/excon/laws.htm#290799
56 http://www.economy.gov.ru
57 http://www.nti.org/db/nisprofs/russia/excon/eksport.htm
58 Umgang mit Know-how in internationalen FuE-Kooperationen - Bundesministerium für Bildung und Forschung (BMBF) - Bonn, Berlin 2009
54
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However, Russian public research institutions are considered to be on the border between low
and medium risk groups. Significantly, Russian private companies and public research
institutions are considered to pose a considerably lower risk than their Chinese and Indian
equivalents.
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5. RECOMMENDATIONS
Based on the preceding investigation and analysis of the Russian semiconductor sector, Russian
semiconductor research and technology and existing EU-Russia semiconductor cooperation, we
now propose recommendations to strengthen future EU-Russia semiconductor design and
production activities. The recommendations target different organisations (i.e. RTD community,
private industry and government) and are separated between strategic (medium-to-long term)
and operational levels (short-to-medium term and/or making use of existing schemes).
Strategic Level
Recommendation #1:
Create National Technology Platforms to support the Russian semiconductor sector and to
interact with the European Technology Platforms (e.g. ARTEMIS, ENIAC and EPOSS).
Need Addressed:
Low interaction between domestic industry and state run research organisations (see Section
1.2.4.2). Low Russian membership in ETP and NoE (see Section 3.3).
Responsible Organisation(s):
Ministry of Information Technologies and Communication, Ministry of Economic Development,
Ministry of Education and Science and Russian Academy of Sciences.
Recommendation #2:
Organise a SICA (Special International Cooperation Action) workshop focused on
semiconductor research topics of common interest to Russia and EU. The aim of the workshop
will be to pinpoint semiconductor research topics that could form the basis of a SICA call in a
future FP7 ICT work programme.
Need Addressed:
Relative lack of semiconductor R&D collaboration between Russia and Europe (see Section 3.2).
Responsible Organisation(s):
Russian Academy of Sciences, Ministry of Education and Science and DG INFSO Units G.1
Nanoelectronics and G.2 Microsystems.
Recommendation #3:
Recommend to the Ministry of Information Technologies and Communication, Ministry of
Economic Development, Ministry of Education and Science and Russian Academy of Sciences to
launch a competitive “Micro/nanoelectronics technology transfer” programme where consortia
comprising of higher educational institutes, public research organisations and industrial
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Recommendations
58
partners implement technology-transfer projects (from academic/public research organisations
to industry). The programme should be largely “bottom-up” driven, where the state defines
broad micro/nanoelectronics themes but consortia formulate their own specific proposal ideas.
Need Addressed:
Support State’s move towards competitive funding programmes. Low interaction between
domestic industry and state run research organisations (see Section 1.2.4.2).
Responsible Organisation(s):
Semiconductor RTD organisations (e.g. SPbSPU and MIET) and private industry (e.g. IDM-Plus
and Mikron).
Recommendation #4
Conduct a branding exercise to internationally promote Russian semiconductor design
organizations.
Need Addressed:
Relatively low awareness in Europe of Russian microelectronics industry. Lack of semiconductor
R&D collaboration between Russia and Europe (see Section 3.2).
Responsible Organisation(s):
Ministry of Information Technologies and Communication and Ministry of Economic
Development.
Operational Level
Recommendation #1:
Organise and financially support annual FP7 ICT awareness raising/training workshops –
concerning micro/nanoelectronics priorities - involving European semiconductor experts.
Need Addressed:
Relative lack of semiconductor R&D collaboration between Russia and Europe (see Section 3.2).
Responsible Organisation(s):
Ministry of Information Technologies and Communication, Ministry of Economic Development,
Ministry of Education and Science and Russian Academy of Sciences.
Recommendation #2:
Join European Technology Platforms and Networks of Excellence and concerned with
micro/nanoelectronics (e.g. AENEAS, ARTEMIS-IA, EUROSOI and EUROPRACTICE).
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
Recommendations
59
Need Addressed:
Low Russian membership in ETP and NoE (see Section 3.3).
Responsible Organisation(s):
Semiconductor RTD organisations (e.g. SPbSPU and MIET) and private industry (e.g. IDM-Plus
and Mikron).
Recommendation #3:
Use the Gate to Russian Business and Innovation Networks (Gate2RuBIN) and Russian
Technology Transfer Network (RTTN) to promote and transfer semiconductor knowledge and
technology to international partners.
Need Addressed:
Challenge of transferring intellectual property between Russia and Europe (see Section 4.2).
Responsible Organisation(s):
Semiconductor RTD organisations (e.g. SPbSPU and MIET) and private industry (e.g. IDM-Plus
and Mikron).
Recommendation #4
Provide tailored training courses to Russian semiconductor design organizations.
- marketing and business development (e.g. how to exploit specialized IC market niches)
- technology transfer (e.g. intellectual property rights, contracts, export control, etc)
- quality management systems (e.g. service best practice for fab and fabless organisations)
Need Addressed:
Challenge of transferring intellectual property between Russia and Europe (see Section 4.2).
Responsible Organisation(s):
Ministry of Information Technologies and Communication and Ministry of Economic
Development.
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60
APPENDIX A
BIBLIOGRAPHY
1. "Revival: A Look Inside "("Возрождение: взгляд изнутри"), «Open systems» («Открытые
системы»), № 6, 2008
2. “Moore's Law”, Paul Kedrosky,·22 Jan 2010
3. “Strategic Research Agenda - First full edition”, Fred van Roosmalen, ENIAC Forum of
Stakeholders, Barcelona, 23 Nov 2005
4. “The chance of Russia in the IT market”, Adamov D., Tishin U., Electronics: Science,
Technology, Business, 3/2005
5. „Russian business newspaper“ №755 (22) , 22 June 2010
6. «Micro perspectives of Russian microelectronics», March 2010
7. «ROSNANO and JSC «Sistematika Group» invest to the establishment of domestic RFID-tags
manufacturer», 24.03.2010
8. «Russian semiconductors: to the future with a hope», Romanchenko V., 02.09.2009
9. Catalogue of Joint Use Centers of scientific equipment (of project executors in 2005-2006 of
the federal task scientific and technical program “Researches and developments in priority
areas of the science and technology” for 2002-2006) /
10. Checklisten zur optimierten Antragstellung - Bundesamt für Wirtschaft und Ausfuhrkontrolle Stand: 01.08.2005
11. Collection of normative legal acts in the sphere of legal protection and use of intellectual
property - Office of monitoring in the field of legal protection and use of scientific and
technical activities results – Moscow 2009 (Сборник нормативных правовых актов в сфере
правовой охраны и использования результатов интеллектуальной деятельности Управление по контролю в сфере правовой охраны и использования РНТД –Москва 2009)
12. Commission recommendation on the management of intellectual property in knowledge
transfer activities and Code of Practice for universities and other public research
organizations - Commission of the European Communities - Brussels, 10.4.2008 C(2008)1329
13. ERAWATCH Research Inventory Report: RUSSIAN FEDERATION
14. EU and Russia to harmonize intellectual property right aspects - press release - Moscow,
03 November 2009
15. European Community-Russia scientific and technological cooperation a roadmap for action
2009-2011
16. Guide to Intellectual Property Rules for FP7 projects - The Seventh Framework Programme
(FP7) of the European Community for research, technological development and
demonstration activities (2007-2013) - European Commission
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Appendices
61
17. INNO-Policy TrendChart - Policy Trends and Appraisal Report – Russia – 2007, N.Ivanova,
I.Dezhina, N.Sheliubskaya, L.Pipiya and V.Zavarukhin, 2007
18. International patent classification guide - Version 2009 - World Intellectual Property
Organization
19. Interview with Dr Alexander Antonov ("NTK"SciDeCo" Ltd), SEMIDEC Event, St Petersburg,
20-21 Sept 2010
20. Interview with Vasily Atyunin (NEVATRON Ltd), SEMIDEC Event, St Petersburg, 20-21 Sept
2010
21. Interview with L.V. Lutsev (A.F. Ioffe Physico-Technical Institute), SEMIDEC Event, St
Petersburg, 20-21 Sept 2010
22. Interview with Alexandra Lyaplina (JSC "Intel A/O"), SEMIDEC Event, St Petersburg, 20-21
Sept 2010
23. Interview with Prof. Konstantin O. Petrosjans (Moscow State Institute of Electronics and
Mathematics), SEMIDEC Event, St Petersburg, 20-21 Sept 2010
24. Interview with Veniamin G. Stakhin (JSC "IDM-PLUS"), SEMIDEC Event, St Petersburg, 20-21
Sept 2010
25. Interview with Michel V. Voloshenko (SRC "Crystal"), SEMIDEC Event, St Petersburg, 20-21
Sept 2010
26. Interview with Dr. Irina Zakharova (St.Petersburg State Polytechnical University ), SEMIDEC
Event, St Petersburg, 20-21 Sept 2010
27. ISSN 1019-3316, Herald of the Russian Academy of Sciences, 2009, Vol. 79, No. 2, pp. 109–
116. © Pleiades Publishing, Ltd., 2009. Original Russian Text © B.N. Kuzyk, 2009, published
in Vestnik Rossiiskoi Akademii Nauk, 2009, Vol. 79, No. 3, pp. 216–224.
28. Memorandum result for the Second International Workshop – Exhibition “Strategy of
Development of Large-Scale Research Infrastructures of the Russian Federation &
Cooperation with the European Union” September 7-8, 2009
29. Presentation materials from the first SEMIDEC event, 20-21 September 2010, St. Petersburg,
Russia
30. Prognose of the science - technology development of the Russian Federation till 2030,
Moscow 2008
31. Report
on the conference “Russian microelectronics market – perspectives of
development”, Uriy Borisov, Deputy Minister Ministry of Industry and Trade of the Russian
Federation, February 26, Moscow
32. Results of interviewing of Russian and European experts in the semiconductor design area
33. Russia Falling Short of Anti-Corruption Plan, The Moscow times, Natalya Kostenko, 13 July
2010
34. Russian Market Update, World Trade Center, Moscow, Russia, 8th April, 2009
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Appendices
62
35. The law N311 ”On approval of development strategy of electronic industry in Russia till
2025”, The Industry and Energy Ministry of Russia, Aug. 7, 2007
36. The St. Petersburg Times, Issue #1568 (29), Tuesday, April 27, 2010
37. Umgang mit Know-how in internationalen FuE-Kooperationen - Bundesministerium für
Bildung und Forschung (BMBF) - Bonn, Berlin 2009
38. Understanding Copyright and related rights - World Intellectual Property Organization
Web links:
1. http://www.rusnano.com
2. http://www.zelenograd.ru
3. http://www.gpssoft.ru
4. http://www.fasi.gov.ru
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APPENDIX B
RUSSIA’S MEMBERSHIP OF WIPO TREATIES
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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APPENDIX C
59
ORGANIGRAMME OF R&D SYSTEM IN RUSSIA 59
ERAWATCH Research Inventory Report: RUSSIAN FEDERATION, http://cordis.europa.eu/erawatch/index.cfm?fuseaction=ri.downloadCountryReport&countryCode=RU
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APPENDIX D
EUROPEAN TECHNOLOGY PLATFORMS
1. NAME, WEBSITE
ENIAC, http://www.eniac.eu/
2. YEAR OF FOUNDATION
ENIAC was established in 2004 as the Technology Platform for Nanoelectronics.
3. MISSION
Its main goal was to define common research and innovation priorities to ensure a truly
competitive nanoelectronics industry in Europe. To attain such an objective, ENIAC invested
intensive efforts to bring together the key players in nanoelectronics research by gathering within
the Platform the main European industrial groups and research organisations, setting up the ENIAC
Scientific Community Council to ensure representation of Universities, and encouraging the
participation in ENIAC of Small and Medium enterprises through national platforms.
Once the strategic directions defined, the ENIAC Technology Platform drove the process leading to
the establishment of AENEAS (Association for European NanoElectronics Actitivities). AENEAS is
carrying on the activities of the Technology Platform and represents R&D actors in the ENIAC Joint
Undertaking (JU).
The ENIAC Joint Undertaking (JU) is a Community body established for the implementation of the
Joint Technology Initiative (JTI) on nanoelectronics, chartered to contribute to the implementation
of the Seventh Framework Programme and the theme Information and Communication
Technologies of the Specific Programme Cooperation.
4. MEMBERSHIP
AENEAS is a non-profit industrial association established under French law that will continue the
activities of the ENIAC Platform and represent the Nanoelectronics RTD partners in the Joint
Undertaking. Members are classified as active members and associated members.
ACTIVE MEMBERS: three types of Active Members are foreseen in the Articles of Association:



Active Members A also referred to as “SME-Active Members”
Active Members B of the association, hereinafter also referred to as “Public research
organisations”
Active Members C of the association, hereinafter also referred to as “Corporate-Active
Members”
ASSOCIATED MEMBERS: they must be natural persons active in the field of nanoelectronics, or
organisations existing as legal entities of industrial or public research organisations active in the
field of nanoelectronics not carrying out research or technological development activities in
funding schemes of industrial or not-for-profit research organisations active in the field of
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nanoelectronics. , e.g. EUREKA clusters, national platforms, pôles de compétivité.
The fixed contribution is an amount, which is set by the General Assembly, that is payable annually
by all Active Members and all Associated Members.
Active Members:
10,000 euros for Corporate-Active Members;
5,000 euros for Corporate-Active Members with a world-wide turnover in the Group to which they
belong of less than 500 Million euros in the ended fiscal year before the Effective Date;
1,000 euros for SMEs-Active Members and Research organisation-Active Members.
Associated Members:
1,000 euros for Associated Members.
All Active Members shall pay a Variable Contribution calculated on the basis of each Active
Member’s and its Associated Companies’ person year participation in JU Projects in the relevant
calendar/ financial year.
TO BECOME A MEMBER OR AN ASSOCIATE, THE PROCEDURE IS AS FOLLOWS:
A. 1. Download and read the Articles of Association, the AENEAS Supplementary Agreement and the
Declaration of Accession (for applicants as active members only);
2. Fill in the online application form;
3. After submitting the online application form, you will receive a pro-forma Application Form by
email.
B. The pro-forma Application Form and the Declaration of Accession Form must be filled and
returned BY MAIL with the requested data and duly signed.
C. A copy of the documents must also be sent electronically.
5. POSSIBILITIES OF RUSSIAN PARTICIPATION
Russian organizations conduction R&D in Europe can become a member of AENEAS. Otherwise,
organizations in FP7 associated countries are also accepted. Unfortunately, Russia is not on the list
of such countries.
6. CONTACTS
AENEAS
140 bis rue de Rennes
75006 Paris
France
Tel : 00 33 1 40 64 45 80
Fax : 00 33 1 40 64 45 89
Email: contact@aeneas-office.eu
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1. NAME, WEBSITE
ARTEMIS, http://www.artemis.eu/
2. YEAR OF FOUNDATION
ARTEMIS Industry Association is the association for R&D actors in Advanced Research &
Technology for Embedded Intelligence and Systems. It was founded in January 2007 to support the
ARTEMIS Joint Undertaking (JU) and to continue the work of the ARTEMIS European Technology
Platform.
3. MISSION
The ARTEMIS JU programme is the first of its kind to bring private-sector research actors together
with the European Commission and a large number of contributing Member States.
The vision of ARTEMIS-IA is that embedded systems will realise the dream of ambient intelligence.
In which intelligent support for people will be embedded in everyday objects. Large-scale
application will increase our quality of life. The result will be to help make life healthier and more
secure. And to provide more comfort for Europe's ageing population. ARTEMIS-IA nurtures the
ambition to strengthen Europe's position in embedded intelligence and systems and to attain
world-class leadership.
4. MEMBERSHIP
ARTEMIS-IA is founding member of the ARTEMIS Joint Undertaking (JU). A Public Private
Partnership together with the EC and participating member states. Till 2017, ARTEMIS JU issues
every year a Call for project proposals. ARTEMISIA represents all her members in the ARTEMIS JU.
The ARTEMISIA Office supports the members by organising multiple networking events and they
can help you in becoming visible in the ARTEMIS network. Only members have free participation in
the ARTEMISIA events such as the Annual Autumn Event and Co-summit with ITEA 2, the Annual
Spring Event, Brokerage Event, Summer Camp and workshops.
As stated by the Articles of Association (AoA), Membership is equally open to SMEs (Members A),
Public Research Organisation (Members B) and Corporate members (Members C). Individuals who
are active in the field of embedded systems or legal persons that maintain an organisation of
enterprises and/or Public Research Organisations that are active in the field of embedded systems
can apply for a position of Associate.
FOUR STEPS TO BECOME AN ARTEMIS-IA MEMBER or an ARTEMIS-IA ASSOCIATE:
1. Read the Articles of Association (AoA) and the ARTEMIS-IA Supplementary Agreement (ASA)
2. In order to pursue your membership or associate application, we ask you to print fill in and sign
the completed Application Form (and in case of membership, the Declaration of Accession (DoA) )
and send the original signed document(s) in any case by regular postal mail! Membership
Application Form Associate Application Form
3. Only applicants having signed the original Application Form documents are eligible to become
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an ARTEMIS-IA member or ARTEMIS-IA Associate.
4. The ARTEMIS-IA Presidium will decide on your application within two to three weeks and will
communicate its decision in writing, mentioning which kind of membership you will be attributed.
5. The original signed document(s) can be posted.
MEMBERSHIP FEE
The fee is per year as from January until December and will be calculated as from the day your
organization is officially accepted as an ARTEMIS-IA member.
EUR 1,000 for Associates
EUR 1,000 for SMEs (A members)
EUR 1,000 for Research Organisations (B members)
EUR 5,000 for Corporate Organisations < 500m (C members<500m)
EUR 10,000 for Corporate Organisations > 500m (C members>500m)
5. POSSIBILITIES OF RUSSIAN PARTICIPATION
Russian organizations can become a member of ARTEMIS-IA Association, although they cannot
participate with in funding in the ARTEMIS programme, since only organizations in the EU
countries are eligible for funding which is regrettable.
6. CONTACTS
Visiting address
ARTEMISIA Association
High Tech Campus 69 - 3rd Floor
5656 AG Eindhoven
The Netherlands
Tel: +31(0)88 0036 188
Fax: +31(0)88 0036 180
E-mail: artemisia@artemisia-association.eu
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1. NAME, WEBSITE
PHOTOVOLTAIC, http://www.eupvplatform.org/
2. YEAR OF FOUNDATION
PHOTOVOLTAIC was founded in 2005 as Photovoltaic Technology Platform.
3. MISSION
The Photovoltaic Technology Platform is an initiative which aims at mobilising all the actors sharing
a long-term European vision for photovoltaic; realising the European Strategic Research Agenda for
PV for the next decade(s) and give recommendations for implementation; ensuring that Europe
maintains industrial leadership.
The Platform Goals are:




Contribute to a rapid development of a world-class cost competitive European PV for a sustainable
electricity production;
Involve stakeholders in the formulation of research programmes;
Ensure strong links and coordination between industry, research and market;
To implement the strategic plan.
To implement the recommendations of the “vision” report of the Photovoltaic Technology
Platform at national level by deepening co-operation between Member States and European
Activities on technical and non-technical matters related to the Technology Platform, with a view
to promoting a European Research Area, facilitating public/private partnerships, removing national
barriers to commercial exploitation and contributing to the realisation of a coherent European
policy framework.
4. MEMBERSHIP
The Member State Mirror Group, acting in co-operation with the platform Steering Committee and
its Governing Board has a crucial role to play in goal and target setting, proposing actions and
providing opinion and feedback on strategies, activities and results generated through the
platform operations. Participants in the Mirror Group are Member States, Associated Candidate
Countries and Associated States of the research Framework Programme having an interest in the
development of photovoltaics. Additional participation from Regions or large Cities having
ambitious integrated initiatives may be considered. Transnational organisations can participate in
the Mirror Group provided that the individual countries which belong to them do not raise any
objections.
1. Obligation for members’ commitment
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It is crucial that Member State delegates are empowered to devote time and effort to participate
to meetings and to develop Member State position papers responding to recommended actions
and reports from the Steering Committee and Working Groups.
2. Chairperson and vice-chairpersons
The Mirror Group will select a committed member to act as Chairperson, to stimulate and coordinate Member States’ activities, to interact with the Steering Committee and participate to its
meetings as representative of the Mirror Group. Two vice-chairpersons shall be appointed to assist
the Chairperson. The Chairperson and Vice-chairpersons will serve for a two-year term with the
possibility to renew it once.
3. Secretariat
A secretariat will be established to support the activities of the Mirror Group and a Secretary will
be appointed by the Mirror Group. The secretariat will act in a purely administrative capacity. This
could be supported through a funded ERA-NET co-ordination action.
5. POSSIBILITIES OF RUSSIAN PARTICIPATION
There are no restrictions for participation of Russian experts, but there is only personal
membership.
6. CONTACTS
Coordinator PV SEC
EPIA - European Photovoltaic
Industry Association
63-65, rue d'Arlon
1040 Brussels
Tel. + 32-2-4653884
Fax +32-2-4001010
secretariat@eupvplatform.org
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1. NAME, WEBSITE
PHOTONICS21, http://www.photonics21.org/
2. YEAR OF FOUNDATION
Photonics21 – founded 2005 – is a voluntary association of industrial enterprises and other
stakeholders in the field of photonics in Europe.
3. MISSION
Photonics21 is a voluntary association of industrial enterprises and other stakeholders in the field
of photonics in Europe. It unites the majority of the leading Photonics industries and relevant R&D
stakeholders along the whole economic value chain throughout Europe. Presently, we can count as
members more than 1,400 stakeholders who come from 49 countries.
Photonics21 undertakes to establish Europe as a leader in the development and deployment of
Photonics in five industrial areas (Information and Communication, Lighting and Displays,
Manufacturing, Life Science and Security) as well as in Education and Training.
To achieve this leadership for the benefit of Europe and its citizens, an ambitious programme is
required to:



Supply the necessary research environment capable of supporting the visionary and industrially
relevant R&D activities for photonics components, systems and their application over a broad
range of industry sectors;
Establish strategic links between mainly SME-based photonics industries and principal user
industries to share their long term vision and to mobilise a critical mass resources;
Foster co-operation and smooth out the current fragmentation of national and European R&D
activities.
The mission of the European Technology Platform Photonics21 is the concerted strategic planning,
the coordination and the facilitation of photonics industrial and research activities in Europe,
encompassing education, basic research, applied research, development, manufacturing and
application.
To this end, Photonics21 will determine common industrial, scientific, technical, political, social
and economic objectives and agree on actions to be taken in order to achieve them.
4. MEMBERSHIP
All those who are involved with applied research, technical development and practical application
of optical and photonic technologies can become a member. However, the main reason for which
European Technology Platforms have been launched is to better align EU research priorities with
industry's needs. Thus, in particular, industrial enterprises and research institutions working at the
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industrial-scientific interface are called upon to join Photonics21. Representatives of public bodies
and governmental organisations involved with research and innovation in the field of photonics
are invited to participate via the Mirror Group of Photonics21.
Becoming a member of Photonics21 is an opportunity to be integrated into a European network of
Photonics experts. Furthermore, you will have the possibility to present your point of view in your
work group and to influence the future research in the field of photonics. Every two month,
members receive a newsletter providing information on platform's activities; they also have access
to a privileged member area within in the Photonics21 website.
HOW TO JOIN?
You can find the link to the membership application form in the web-site of the platform. In order
to join, please fill in the application form.
5. POSSIBILITIES OF RUSSIAN PARTICIPATION
There are no restrictions for participation of Russian experts, but there is only personal
membership.
6. CONTACTS
Photonics21 Secretariat
c/o VDI Technologiezentrum GmbH
VDI-Platz 1
40468 Duesseldorf
Germany
Telephone: +49 (0) 211 6214-668
e-mail: secretariat@photonics21.org
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1. NAME, WEBSITE
EPoSS, http://www.smart-systems-integration.org/public
2. YEAR OF FOUNDATION
EPoSS was founded in 2006 as the European Technology Platform on Smart Systems Integration
3. MISSION
EPoSS, the European Technology Platform on Smart Systems Integration, is an industry-driven
policy initiative, defining R&D and innovation needs as well as policy requirements related to
Smart Systems Integration and integrated Micro- and Nanosystems. EPoSS is contributing to the
Lisbon Strategy, aiming at boosting economic growth, creating more and better jobs and ensuring
sustainable prosperity in Europe.
EPoSS brings together European private and public stakeholders in order to create an enduring
basis for structuring initiatives, for co-ordinating and bundling efforts, for setting-up sustainable
structures of a European Research Area on Smart Systems Integration. EPoSS embraces all key
players, public and private, in the value chain so as to




provide a common European approach on Innovative Smart Systems Integration from research to
production outlining the key issues for a strategic European innovation process
formulate a commonly agreed roadmap for action (updating, assembling and completing existing
material and approaches) and provide a strategic R&D agenda
mobilise public and private human, infrastructural and financial resources, and
define priorities for common research and innovation in the future.
4. MEMBERSHIP
Like other Technology Platforms the infrastructure necessary to maintain operations as well as the
activities of the EPoSS Office are financed by its members. This contribution is not intended to be a
formal membership fee, but a remuneration for the services provided.
EPoSS Members will therefore be asked to pay a small contribution as follows:



Large Companies (>250 employees):
6,000 €
SMEs and public research institutions: 3,000 €
Universities:
1,500 €
Becoming an EPoSS member will provide you with a series of advantages as it will allow you
amongst others to


access the internal area of the EPoSS web portal
have unlimited access to the EPoSS Working Groups and to receive information from internal
sessions
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



1.
2.
3.
4.
5.
facilitate your access to European projects and funding and to receive information on Commission
decisions
participate at EPoSS internal meetings free of charge
obtain a reduced participation fee for the annual EPoSS conference
have privileged access to other smart systems events connected to EPoSS
MEMBERSHIP PROCCESS:
Fill in online form
You are now registered as the manager/responsible for this institution.
Confirmation
You will receive a notification. Representatives of an institution will now be able to add substitutes
for their institutions as well as accept further members.
Payment
The office will send the "offer for the services of the ETP" to you. Please return a signed version of
the fax-answer to the office. The office will send the invoice for the first year to you. Please pay the
membership contribution.
Access
You now have access to the internal area of the web portal. You will be able to download
documents, upload files (in certain folders) and contribute on a variety of working group activites.
Access is preliminary and is finally confirmed by payment of the membership fee.
Remember
This web portal will evolve continuously. The office will improve its functionality according to the
needs of the ETP members.
5. POSSIBILITIES OF RUSSIAN PARTICIPATION
There are no any special procedures to become an EPoSS member for Russia. Although EPoSS
essentially is open for everybody, members should predominantly be industry representatives.
SMEs are particularly welcome. Furthermore public research organisations, industry associations
and other organisations able to further develop the vision of Smart Systems are welcome.
6. CONTACTS
VDI/VDE Innovation + Technik GmbH
Steinplatz 1
10623 Berlin, Germany
http://www.vdivde-it.de
Mr. Wolfgang Gessner
Dr. Sebastian Lange
slange@vdivde-it.de
Tel.: +49 30 310078-299
Fax: +49 30 310078-225
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1. NAME, WEBSITE
EuMaT, http://www.eumat.org/
2. YEAR OF FOUNDATION
Establishing of the EuMaT has happened on November 29, 2004 in Brussells.
3. MISSION
EuMaT – European Technology Platform for Advanced Engineering Materials and Technologies has
been launched in order to assure optimal involvement of industry and other important
stakeholders in the process of establishing of R&D priorities in the area of advanced engineering
materials and technologies. EuMaT should improve coherence in existing and forthcoming EU
projects, and lead to (according the EU list of keywords):


"Radical Change"
"Sustainable Development"
Both, obviously, in the sector of advanced engineering materials and related technologies. EuMaT
should cover all elements of the life cycle of advanced engineering materials / technologies:







design, development & qualification of advanced materials
advanced production, processing and manufacturing
material and component testing
material selection and optimization
advanced modeling on all scales
databases and supporting analytical tools
life-cycle considerations, including impacts, decommissioning, reliability, hazards, risks and
recyclability.
4. MEMBERSHIP
To become a member there is a possibility to express interest in EuMaT online using the form on
the web-site. The procedure is quite simple and it consists of few steps. You need to provide your
contact data, to explain your interest in EuMaT and fill out the inquiry. You have to indicate your
views on general priorities in the area of Advanced Engineering Materials and Technologies. There
is no fee for EuMaT members.
For the deployment of its Strategic Research Agenda EuMaT looks explicitly for other than only EU
based financing. For this purpose EuMaT concentrates its efforts on strong concerting of the EU
and non-EU financing, helping to avoid duplication and/or any sub-optimal use of resources. For its
financing EuMaT looks at the experiences from other success stories (e.g. European Coal and Steel
Community - ECSC), and relays on the principles of the PPP – Public-Private-Partnership schemes.
The stakeholders will be organized as a EuMaT partners (regular ones, core ones, ad-hoc ones,
each of which can be, at the same time also an "investing/financing partner"). The decisionSEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
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









making and management structure comprising essentially:
the Industrial Supervisory Board
the Scientific Advisory Board
the all-partner General Assembly and
the Executive Group, and the Operating Agent
Main stakeholders to be involved are:
Industry (large, medium and small, embracing the whole production and supply chain, including
component, equipment and sub-system suppliers, service providers and user industries; those
involved in technology transfer; also, industry associations)
Public authorities (regulators and policy makers, funding agencies; in the particular notified and
licensing bodies)
Academic community (apart for education and research also those involved in innovation and
interested in the issue of European Innovation Area);
Consortia from other EU projects
Financial community (private banks including the EIB, the European Investment Fund EIF, venture
capital, etc.; in particular supporting SME’s)
Civil society, including users and consumers (involving the also the future customers, e.g. through
associations).
5. POSSIBILITIES OF RUSSIAN PARTICIPATION
Russian organizations can become a member of EuMaT, there are no restrictions or special
procedures for them.
6. CONTACTS
KMM-VIN AISBL
Rue du Trône 98
1050 Brussels
Belgium
Prof. Michal Basista
Tel: +48 22 828 53 74
+48 22 826 25 22
Fax: +48 22 826 25 22
Michal.Basista@kmm-vin.eu
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APPENDIX E EUROPEAN NETWORKS OF EXCELLENCE
1. NAME, WEBSITE
EUROSOI, http://www.eurosoi.org/
2. YEAR OF FOUNDATION
EUROSOI was founded in 2005 as a discussion forum for the exchange of ideas and results around
Silicon-On-Insulator technologies in Europe.
3. MISSION
The EUROSOI network embraces a broad range of research areas related to Silicon-On-Insulator
technology (from materials to end-user electronic applications in traditionally strong European
industrial sectors such as automotive, communications, space). EUROSOI aims at federating the
existing research work on SOI topics and at providing an appropriate communication channel
between academic groups and industrial production centres. EUROSOI coordination efforts will be
focused on fostering different activities to improve the lack of industrial development in Europe in
SOI topics. A network of research centres, industries and end-users is the appropriate tool to
structure and organize the existing R&D work on SOI topics, and achieve a critical mass to
efficiently close the gap between academic groups and industry, which is responsible for the
weakness of European Industry with regard to SOI. Key actions to reach the above-mentioned
objectives are:




to promote interaction between scientists,
to take advantage of the previous experience of research groups,
to join forces to maximize the synergy between individual skills, thus obtaining the best achievable
global results, and
to provide an appropriate communication channel between academic groups and industrial
production centres.
4. CONTACTS
Sorin Cristoloveanu, Co-Chair
Tel: +33476856040
E-mail: sorin@enserg.fr
Olivier Faynot, Co-chair
Tel: +33438784368
E-mail: olivier.faynot@cea.fr
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1. NAME, WEBSITE
EUROPRACTICE, http://www.europractice.com/
2. YEAR OF FOUNDATION
EUROPRACTICE was launched by the European Commission (DGIII) in October 1995.
3. MISSION
EUROPRACTICE was launched to help companies improve their competitive position in world
markets by adopting ASIC, Multi-Chip Module (MCM) or Microsystems solutions in the products
they manufacture. The program helps to reduce the perceived risks and costs associated with
these technologies by offering potential users a range of services, including initial advice and
ongoing support, reduced entry costs and a clear route to chip manufacture and product supply.
EUROPRACTICE can also provide users with the training and CAD software required to design and
develop their ASIC, MCM or Microsystems solution.
EUROPRACTICE services were enlarged and funded again by the EU Seventh Research Framework
Programme (FP7). The aim is to improve the competitiveness of European industry by the
adoption of advanced electronics technologies.
EUROPRACTICE is a quality brand name for European service-type projects in the Microsystems
and Microelectronics fields. The EUROPRACTICE brand name covers a wide range of FP6 and FP7
projects.
4. POSSIBILITIES OF RUSSIAN PARTICIPATION
There are no restrictions on Russian Organizations taking part in EUROPRACTICE. Currently there
are 15 Russian institutes with design tools supported via EUROPRACTICE and some of them have
had ICs fabricated.
5. CONTACTS
For general enquires about EUROPRACTICE:
Carl Das, Project Coordinator
Phone: +32 16 281571
E-Mail : mpc@imec.be
For IC Services:
Wayne Mckinley
Tel : +49 (0)9131 776-4413
E-mail : virtual-asic@iis.fraunhofer.de
For Tools and Software:
John McLean, Project Coordinator
Phone: +44 1235 445327
E-Mail : enquiries@msc.rl.ac.uk
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1. NAME, WEBSITE
NANOICT, www.nanoict.org
2. YEAR OF FOUNDATION
NANOICT was founded in January 2008 as Nano-scale ICT Devices and Systems Instrument
Coordination Action
3. MISSION
The nanoICT Coordination Action activities will reinforce and support the whole European
Research Community in "ICT nanoscale devices" covering the following research areas expected to
demonstrate unconventional solutions beyond the expected limits of CMOS technology:
 Demonstration of new concepts for switches or memory cells
 Demonstration of new concepts, technologies and architectures for local and chip level
interconnects with substantial improvements over current solutions
 Demonstration of radically new functionalities by the integration of blocks from a few
nanometres down to the atomic scale into high added-value systems
The CA action plans will go beyond the organisation of conferences, workshops, exchange of
personnel, WEB site, etc. developing the following activities:
 Consolidation and visibility of the research community in ICT nanoscale devices
 Mapping and benchmarking of research at European level, and its comparison with other
continents
 Identification of drivers and measures to assess research in ICT nanoscale devices, and to
assess the potential of results to be taken up in industrial research
 Coordination of research agendas and development of research roadmaps
 Coordination of national or regional research programmes or activities, with the aim to involve
funding authorities in building the ERA around this topic
 Development of strategies for international cooperation on themes related to NanoICT
 Expected impact will be the enhanced visibility, shaping and consolidation of the NanoICT
research community in Europe.
Fill in the online form to become a partner.
4. CONTACTS
Project Coordinator: Dr. Antonio Correia
Mailing address:
Phantoms Foundation
PCM - Pabellon C - 1ºPlanta
Ctra. Colmenar Viejo - Km.15 / Campus Cantoblanco / UAM
28049 Madrid (Spain)
Fax: +34 91 4973471
antonio@phantomsnet.net
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APPENDIX F RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS
Name
City
Activities
Applications
UNIVERSITIES
Skobeltsyn Institute of
Nuclear Physics
Lomonosov Moscow State
University
Moscow
System design ICDesign,
Process Modelling
Semiconductor manufacturing approaches,
processes and tools
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Biomedical microsystems and smart
miniaturised systems
National Research Nuclear
University MEPhI
Department of Microand
Nanoelectronics
Moscow
System design
IC-Design,
Process
Modelling,
Nanotechnology
devices
Increasing industrial process variability,
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Photonics,
Electro-magnetic interference, heat
dissipation, energy consumption,
Energy efficient electronic systems, thermal
effect aware design,
Autonomous energy efficient smart systems
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
miniaturised systems,
Heterogeneous systems, integration of
heterogeneous functions
National Research Nuclear
University MEPhI
Department of Electronics
Moscow
IC-Design
Read-out ASICs for different multichannel
detectors,
Chips for data-driven systems
SaintPetersburg
State Polytechnical
University, Department of
Electrical
Engineering and
Telecommunications
SaintPetersburg
State Polytechnical
University, Department of
Telematics
St.Petersburg
IC-Design
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Transport, safety and security,
Telecommunications
St.Petersburg
Measuring
devices,
High-speed
communication
network
Saint Petersburg State
Electrotechnical University
"LETI"
St.Petersburg
System design,
Nanotechnology
devices
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Autonomous energy efficient smart systems,
Transport, safety and security,
Telecommunications
Increasing industrial process variability,
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
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Name
Vladimir State University
City
Vladimir
R&D INSTITUTES/ORGANISATIONS
Research Institute of
Moscow
Material Science and
Technology
Activities
IC-Design,
System design
Applications
materials,
Transport, safety and security,
Telecommunications
Telecommunications,
Heterogeneous systems, integration of
heterogeneous functions
Transport, safety and security
Basic research,
application
development and
industrial
engineering of
materials for
military and civil
electronics
technology
Semiconductor manufacturing approaches,
processes and tools
Novel process/metrology equipment and
materials
Photonics
Electro-magnetic interference, heat
dissipation, energy consumption
Energy efficient electronic systems, thermal
effect aware design
Transport, safety and security
Telecommunications
Biomedical microsystems and smart
miniaturised systems
Research Centre "Module",
JSC
Moscow
System design
IC-Design,
Transport, safety and security,
Telecommunications
Federal State Unitary
Enterprise
"Microelectronic Research
Institute
"PROGRESS"
Moscow
System design,
IC-Design
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Energy efficient electronic systems, thermal
effect aware design,
Autonomous energy efficient smart systems,
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
miniaturised systems
Digital Solutions, LLC, SPE
Moscow
System design
IC-Design,
Process Modelling
Semiconductor manufacturing approaches,
processes and tools,
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Energy efficient electronic systems, thermal
effect aware design,
Autonomous energy efficient smart systems,
Transport, safety and security,
Telecommunications
Moscow State Institute of
Electronics and
Mathematics
Moscow
Process Modelling
Novel process/metrology equipment and
materials,
Electro-magnetic interference, heat
dissipation, energy consumption,
Energy efficient electronic systems, thermal
effect aware design
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Name
City
Activities
Applications
Intel Labs St. Petersburg
(Intel Labs
Department in Russia)
IC Design Centre “Alfa
Cristal”
St.Petersburg
System design
Telecommunications,
Heterogeneous systems, integration of
heterogeneous functions
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Transport, safety and security,
Telecommunications
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Photonics,
Telecommunications
Energy efficient electronic systems, thermal
effect aware design,
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
miniaturised systems
Novel process/metrology equipment and
materials,
Energy efficient electronic systems, thermal
effect aware design,
Transport, safety and security
St.Petersburg
IC-Design
Ioffe Physical Technical
Institute of
Russian Academy of Science
St.Petersburg
Process
Modelling,
Nanotechnology
devices
Nevatron, Ltd.
St.Petersburg
System design,
IC-Design
Taganrog Institute of
Technology (Southern
Federal University), Centre
“Nanotechnologies”
Taganrog
JointStock
Company Research Institute
of
Semiconductor Devices
Tomsk
System design,
IC-Design,
Process
Modeling,
Nanotechnology
devices
System design
IC-Design,
Process Modelling
Voronezh Innovation &
Technology Centre
Voronezh
IC-Design,
Process Modelling
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Energy efficient electronic systems, thermal
effect aware design,
Autonomous energy efficient smart systems,
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
miniaturised systems
ELNAS
Voronezh
IC-Design
Telecommunications (DVB H/T),
Satellite navigation (Glonass/GPS),
Logic and Memory SiP (FPGA/Flash),
Increasing industrial process variability,
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Photonics,
Energy efficient electronic systems, thermal
effect aware design,
Autonomous energy efficient smart systems,
Biomedical microsystems and smart
miniaturised systems
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Name
City
Activities
Applications
MEMS (Smart RFID),
Novel electrochemical nanomaterials (for IC,
3D TSV and Solar Cells)
Research and Production
Company "Sensor
IS”, LLC
Zelenograd
System design
IC-Design,
Process Modelling
Increasing industrial process variability,
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Photonics,
Transport, safety and security,
Telecommunications,
Heterogeneous systems, integration of
heterogeneous functions
PKK Milandr, JSC
Zelenograd
IC-Design
IDM Ltd
Zelenograd
IC-Design
Heterogeneous systems, integration of
heterogeneous functions
Telecommunications,
Autonomous energy efficient smart systems,
Heterogeneous systems, integration of
heterogeneous functions,
Biomedical microsystems and smart
miniaturised systems
IDM-PLUS
Zelenograd
System design,
IC-Design
Semiconductor manufacturing approaches,
processes and tools,
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Electro-magnetic interference, heat
dissipation, energy consumption,
Energy efficient electronic systems, thermal
effect aware design,
Autonomous energy efficient smart systems,
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
miniaturised systems
"Laboratory of Innovation
Technology" ltd.
Zelenograd
System design,
Process
Modelling,
Nanotechnology
devices
Increasing industrial process variability,
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Energy efficient electronic systems, thermal
effect aware design,
Autonomous energy efficient smart systems,
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
Appendices
84
Name
City
Activities
Applications
miniaturised systems,
Heterogeneous systems, integration of
heterogeneous functions
Electronic VLSI Engineering
and
Embedded Systems
Research and
Development Centre of
Microelectronics
Design Centre KM211
Zelenograd
Zelenograd
PRODUCTION COMPANIES/ORGANISATIONS
Epiel Joint Stock Company
Zelenograd
System design,
VLSI Design,
Process
simulation,
Nanotechnology
devices
System design,
IC-Design
ASIC (SoC & SiP, FPGA & IP) design,
Navigation and telecommunications
Rad Hard IC design for Space,
Transport, safety and security
Supplier of silicon
epitaxial wafers
and epitaxial
services for the
Microelectronics
Industry
Increasing industrial process variability,
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Photonics
Flexible, organic and large area electronics
(sensors, RFID, TFTs and others),
Photonics,
Energy efficient electronic systems, thermal
effect aware design,
Electro-magnetic interference, heat
dissipation, energy consumption,
Autonomous energy efficient smart systems,
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
miniaturised systems
Mikron, Joint Stock
Company
Zelenograd
System design
IC-Design, Process
Modelling,
Nanotechnology
devices
Semiconductor manufacturing approaches,
processes and tools,
Novel process/metrology equipment and
materials,
Energy efficient electronic systems, thermal
eff ect aware design,
Autonomous energy efficient smart systems
Transport, safety and security,
Telecommunications,
Biomedical microsystems and smart
miniaturised systems
SMC "TECHNOLOGICAL
CENTRE" MIET
Zelenograd
IC-Design,
Process Modelling
Transport, safety and security,
Biomedical microsystems and smart
miniaturised systems,
Heterogeneous systems, integration of
heterogeneous functions
SEMIDEC REPORT ON RUSSIAN SEMICONDUCTOR DESIGN ORGANIZATIONS |
Appendices
85