- Résumé
Jagdish (Jay) Narayan
The John C. C. Fan Family Distinguished Chair Professor and Director
NSF Center for Advanced Materials and Smart Structures
Room 3030, Engineering Building I, Centennial Campus
Department of Materials Science and Engineering
North Carolina State University
Raleigh, NC 27695-7907.
Phone: (919) 515-7874; Fax: (919) 515-7642; E-mail: J_NARAYAN@NCSU.EDU
Education
Ph.D. (1971) and M.S. (1970) University of California, Berkeley; B. Tech. (1969 Univ. First Rank
Medalist, Highest Hons. & Dist.) I.I.T., Kanpur, India, 1997 Distinguished Alumnus Award
Major field- Materials Science and Eng; Minor fields- Electrical and Computer Eng and Solid State
Physics
Record of Professional Work Experience
2002The John C. C. Fan Family Distinguished Chair Professor
1990NCSU Distinguished University Professor (Materials Science and Engineering, Electrical
and Computer Engineering and Physics) and Director of Center for Advanced Materials
and Smart Structures
2007ORNL Distinguished Guest Scientist
1990-92
National Science Foundation, Division of Materials Research, Director*
1984North Carolina State University, Professor
1984-86
Microelectronics Center of North Carolina, Director
1972-84
Oak Ridge National Lab., Senior Scientist and Leader of Thin Film and Electron
Microscopy Group
1971-72
Lawrence Berkeley National Lab., Research Metallurgist
*The DMR is the largest division of the NSF with over twenty Research Program Directorates and over
$250M annual budget.
Specific Outstanding Technical and Professional Engineering Accomplishments and Contributions
Starting with his doctoral thesis, Narayan provided first direct evidence for the presence of vacancies and
interstitials in ionic solids, and established, via rigorous in-situ diffusion experiments, the activation
energy for pipe diffusion along the dislocations and grain boundaries to be half that in the bulk. This
research, recognized by numerous Awards, has proven to be pivotal to our understanding of basic
phenomena in metals, ceramics and electronic materials and processing. Narayan is internationally
known for his seminal contributions in laser processing of novel materials including laser annealing and
pulsed laser deposition, atomic-scale characterization, and atomistic modeling of dislocations and
interfaces. He invented novel supersaturated semiconductor alloys formed by solid phase epitaxy, and by
liquid phase crystallization where melt-quenching rates are billions of degrees per second. This research,
featured twice in Science Magazine (5/4/1979 & 4/19/1991 issues), resulted in four U.S. patents and two
IR-100 Awards. Narayan discovered and patented new nanocrystalline metal-ceramic composites,
invented 1-2-4 (Y1Ba2Cu4O8) superconductor with Tc~80-100 K, co-originated laser ablation for thin film
deposition, and patented a novel method for synthesizing thin films.
The 1982 ORNL Review, Summarizing the Four Decades of ORNL Achievements, recorded three of
Narayan’s achievements (relating to his three unprecedented IR-100 Awards) out of 12 totals in the field
of materials science and engineering. This is truly remarkable considering the fact the materials field
represents a major mission of the Laboratory in which many billions of dollars were spent over the last
0
forty years, and the fact that Narayan was associated with the ORNL only in the last decade. He
established atomic structure and properties of dislocations and grain boundaries in semiconductors and
high –Tc superconductors. He discovered the orientation dependence of core energy of dislocations,
critical to obtaining dislocation-free silicon wafers for devices. More recently, he has pioneered and
patented a new concept of domain epitaxy where an integral number of lattice constants of the film match
that of the substrate in large lattice mismatched systems. The domain epitaxy is key to the formation of
large-misfit thin film heterostructures, such as TiN films on silicon with 4/3 matching, and III-nitrides &
ZnO films on sapphire with 6/7 matching. Narayan has invented new cubic ZnMgO alloys which can be
grown epitaxially on (100)silicon substrates for integration between optoelectronic and spintronic
devices. Thus, Narayan’s inventions on domain matching epitaxy and fundamental advances in defects
and interfaces address a major grand challenge for next-generation solid state devices, which is related to
the formation of device-quality single-crystal thin films on substrates with lattice misfit ranging from 2%
to 30%. These thin-film heterostructures lead to a successful integration of device functionality ranging
from digital computing and signal processing, r-f devices and optical sources, to infrared detection
systems. Narayan has discovered and patented a new method of self-assembly for processing
nanostructured magnetic, photonic, electronic and structural materials. This research was judged by the
National Science Foundation to be a major breakthrough in 2004. His pioneering research on synthesis
and modeling of nanocrystalline metals, ceramics, and composites has established a solid foundation and
clarified long-standing controversies related to their structure-property correlations. One of his ideas
related to quantum confinement by thickness variation (creating Nano Pocket @) is being used by Kopin
Corp. to manufacture high-efficiency light emitting diodes for solid state lighting. He recently delivered
The Edward DeMille Campbell memorial lecture entitled, “New Frontiers in Thin Film Growth and
Nanomaterials,” at the Annual ASM International Meeting (October 17-20, 2004) in Columbus, Ohio.
Impact of Work
Profound impact on thin film epitaxy across the misfit scale, defects and interfaces, laser processing,
semiconductor doping and novel materials processing which led to a record three IR-100 Awards for new
materials and technologies. Narayan holds twenty five patents on domain matching epitaxy, defect reduction
in thin film heterostructures, new materials, and processing of semiconductor devices. He holds ten patents
with Kopin Corp (and Kobrite Corp), which are pivotal to their highly successful CYBER display, solid state
lighting and device business. The Kopin Corp, MIT spin-off and Massachusetts based multinational Corp, has
licensed patents related to domain epitaxy and new cubic ZnMgO and ZnCdO alloys from NCSU to
manufacture III-nitride and II-oxide based light emitting diodes and lasers covering the entire range of the
visible spectrum. Using DME and 3-D thin-film growth concepts (Volmer-Weber growth), Narayan invented
3-D self-assembled nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which
NSF hailed as one of the breakthroughs of the year (2004).
Landmark Publications
Properties of Vacancies and Interstitials in MgO – Scripta Met 6, 259 (1972) and Phil Mag. 26, 1179 (1972);
J. Appl. Phys 43, 4862(1972); Acta Met 21, 533(1973).
Laser Annealing of Ion Implanted Semiconductors – Appl. Phys. Lett. 32, 139 (1978) Citation Classic, and
(Invited) Science 204, 461 (1979) Citation Classic; Pulsed Laser Melting – Phil Mag 43, 1515 (1981) and
Phys. Rev. Lett. 52, 561 (1983).
Interface Instability and Formation of Supersaturated Semiconductor Alloys – J. Appl. Phys. 52, 1289 (1981)
and Appl. Phys. Lett. 41, 239 (1982).
1
Pulsed Laser Deposition and Processing of Thin Films – Appl. Phys. Lett. 51, 1845 (1987) and Physical
Review B41, 8843 (1990) Citation Classic, and Science 252, 416 (1991) and (Invited) International Materials
Reviews 42, 137 (1997).
Atomic Structure of Dislocations and Grain Boundaries – Phil. Mag. A71, 537 (1995); Phil Mag. A72, 297
(1995) and Phil Mag. A73, 767 (1996); J. Appl. Phys.92, 7122(2002).
Domain Epitaxy and Thin Films – Appl. Phys. Lett. 61, 1290 (1992); J. Appl. Phys. 84, 2597 (1998); J. Appl
Phys. (Invited Review) 87, 965 (2000); J. Appl. Phys.93,278(2003) and Met and Mat Trans 36, 5 (2005)Edward DeMille Campbell Lecture.
Novel Nanocrystalline Materials – Phys. Rev. Lett. 46, 1491 (1981); Phil Mag A 49,287(1984); Phil Mag 49,
475(1984); US Patent 4,376,755(1984); Appl. Phys. Lett. 76, 43 (2000); J. Nanoparticle Research 2,
91(2000);4,265(2002); Acta materialia 50, 3527 (2002); Acta Materialia 50, 5067(2002); Acta Materialia 50,
3995(2002); Acta Materialia 50, 4823(2002); J. Nanoscience and Nanotechnology 4, 726 (2004); J. Appl.
Phys. 89, 132502 (12006); J. Appl Phys 100, 034309 (2006).
III-nitride and II-oxide Based Materials- Appl. Phys Lett 67, 1549(1995); J. Appl Phys. 84,2597(1998); Appl
Phys. Lett. 74, 2465(1999); J. Appl Phys, 85, 7884(1999); Solid State Comm 121, 9(2002); Appl. Phys Lett
81,841(2002); Sold State Comm 121, 371(2002); Appl. Phys Lett 81, 3978(2002).
Perovskite Based Materials- J. Appl. Phys. 80,6720(1996); Appl. Phys Lett 71, 1709(1997); Appl. Phys Lett
76, 1458(2000); Appl. Phys Lett 80,4039(2002); Solid State Comm 121, 357(2002) and 121 357(2002); appl
Phys Lett 80,1337(2002).
Diluted Magnetic Semiconductors- Solid State Comm 121, 371 (2002); Appl. Phys Lett 88, 142503 (2006); J.
Elect Mat 35, 852 (2006); Appl. Phys Lett 88, 142511 (2006); Applied Phys Lett 84, 5255(2004); Appl Phys
Lett 87, 172502 (2005).
Smart Materials and Transparent Conducting Oxides- J. Appl. Phys 100, 103524 (2006); J. Appl. Phys 100,
123 102 (2006); J. Appl Phys 100, 093519 (2006); J. Appl Phys 100, 033713 (2006); Appl Phys Lett 88,
032106 (2006); J. Appl Phys 97, 083539 (2005).
Principal Technical Society Membership and Activities
Life Member and Fellow TMS (The Materials Society) and National Academy of Sciences, India – both
limited to 100 members; Life Member and Fellow of APS; Fellow of ASM International; Fellow of AAAS;
Materials Research Society Governing Board Councillor (1984-87); MRS Fall Meeting Co-chair (1984),
MRS Long-Range Planning (1987-89); Executive council-Electronic, Magnetic and Photonic Materials
Division of TMS; DOE-National Labs. and NSF-major facilities reviewer; TMS Awards Chair-EMPMD;
Board member Kopin (Highly Successful Advanced Materials and Display Devices Co.); Consultants at H. C.
Starck, Inc., Advanced Ceramics, Lockheed Martin, Honeywell and Spire Corp.; Director – Division of
Materials Research, NSF (1990-92); NSF Representative to NRC Committees; NSF Chair for the Presidential
Materials (AMPP) Initiative; Member – University of Alabama Advisory Committee; Member – Visiting
Committee (School of Materials Science and Engineering) Georgia Tech.; TMS Bruce Chalmers Award
Committee Member and Chair (2000-03); Army Research Office (ARO) Board Member and Chairman of the
Board (2002); ASM Nominating Committee Member; ASM Gold Metal Committee Member and Chair
(2001-04); International Materials Reviews Committee Member: TMS John Bardeen Committee Member
and Chair (2004-07).
2
Professional Awards and Recognition
2008 MRS Inaugural Fellow, 2005 TMS Symposium on NEW FONTIERS IN THIN FILM GROWTH AND
NANOMATERIALS held in honor of Professor Narayan at the 134th TMS Annual Meeting in San Francisco;
Journal of Electronic Materials (May 2006 Issue) Published honoring Professor Narayan; Winner of 2004
Edward DeMille Campbell Lecture and ASM Campbell Prize; 1999 ASM – International Gold Metal
(Highest ASM Honor); Life Member and Fellow TMS elected 1999 (Highest TMS Honor); Honorary
Membership MRS-India (Highest Honor) Elected in 2000; ASM Best-in-Class Award (1971); DOE (Div. of
Materials Sciences) Award for Outstanding Research (1981); IR-100 Award (1979) for Laser Diffused p-n
Junctions and Devices; IR-100 Award (1981) for Novel Supersaturated Semiconductor Alloys; IR-100 Award
(1982) for New Nanocrystalline Metal-Ceramic Composites; 1992 NSF Distinguished Service Award; 1997
IIT/K Distinguished Alumnus Award; NCSU – Distinguished University Research Professorship (1990- );
Fellow and Life Member (APS, NAS – limited to 100 members); Fellow (ASM, AAAS); 2001ASMInternational Best Paper Award; EMSA – Best Paper Award (1994); One of the most cited authors for
Journal articles published 1980 through 1997 (Max-Planck Citation Index), Web of Science: over 10,700
Citations, hi-index 49, Citation Classics 17.
Research and Training of Students
Professor Narayan directs the prestigious NSF Center for Advanced Materials and Smart Structures with a
total ($1.2M annual funding to NCSU and NC A&T). The Center was funded initially in 1998 for five years
and has recently been renewed for the next five years. He also has ONR, NSF-NIRT and ARO funded Center
for Nanostructured Materials with $275K/yr. In addition, he has had over $8.0M funding for his cutting-edge
research in advanced materials and devices since 1984. He has published over 1,000 papers in archival
journals, edited 9 books and received 25 patents. Three of these patents led to unprecedented 3 IR-100
Awards for three new technologies. In 2004-5, Professor Narayan has published over forty Journal and
reviewed conference proceedings papers. Narayan has graduated over 60 Ph.D. students and trained 25
Postdocs who are employed in leading companies such as IBM, INTEL, Motorola, Texas Instruments, AMD;
National Labs., and universities. Fourteen of them are in tenured and tenure-track faculty positions, six of
these students received NSF-NYI/CAREER Award, One Presidential Early CAREER (PECASE) Award, five
MRS-Best Graduate Student Medal, one TMS Hardy Gold Medal, three TMS Young Scientist Award, one
IBM Faculty Awards, EMSA and ASM Best Paper Awards, etc. In 2005-6, he graduated five PhD students,
two joined INTEL; one Applied Materials; one Texas A&M faculty; and one Post doctoral fellow at Los
Alamos National Lab.
Teaching Accomplishments
Since his tenure at NCSU in 1984, Professor Narayan has developed a total of seven courses:
1.
2.
3.
4-5.
6-7.
MAT 702 – Defects and Mass Transport in Solids
MAT 760 – Materials Science and Processing of Semiconductor Devices
MAT 770 – Defects, Diffusion and Ion Implantation in Semiconductors
MAT 791 A & B – Advanced Materials and Smart Structures I & II
MAT 791 J & K – Advanced Materials Processing I & II
Developed seven graduate level courses, two of them are taught on Distance-Education Network. These
courses MAT-760 (Materials Science and Processing of Semiconductor Devices) and MAT -770 (Defects,
Diffusion and ion Implantation in Semiconductors) are very popular among NCSU students and practicing
engineers in microelectronics and photonics industry such as IBM, INTEL, Motorola, AMD, to update their
skills and finish the M.S. degrees. Narayan pioneered Distance-Education teaching in North Carolina, starting
with his first course in 1985. The GA/Office of the President has provided a special grant as apart of the UNC
3
E-learning Initiative to incorporate these courses into a special degree program in Photonics and
Microelectronics. Narayan has the GA grant to develop MS in Nanoengineering which will be offered via
Engineering Online nationally and internationally.
MOST SIGNIFICANT CONTRIBUTION/ACCOMPLISHMENT:
Laser Processing of Advanced Materials
(1) Published FIRST papers in laser annealing of Ion Implanted semiconductors showing a complete
removal of displacement damage and electrical activation dopants (U.S. Patent, IR-100 Award and
DOE Award).
(I) "Laser Annealing of Boron Implanted Silicon" by R.T. Young, C.W. White, G.J. Clark, J.
Narayan, W.H. Christie, M. Murakami, P.W. King, and S.D. Kramer, Appl. Phys. Lett. 32, 139
(1978).
(II) "A comparative study of Laser and Thermal Annealing of Boron Implanted Silicon", J. Narayan,
R.T. Young, and C.W. White, J. Appl. Phys. 49, 3912 (1978).
(III) "Laser Annealing of Diffusion Induced Imperfections in Silicon", R.T. Young and J. Narayan,
Appl. Phys. Lett. 33, 14 (1978).
(IV) "Laser Annealing of Ion Implanted Semiconductors", C.W. White, J. Narayan and R.T. Young,
Invited Article in Science 204, 461 (1979).
(2) Confirmation of the Melting model by annealing of microstructural defects and precipitates and
growth of dislocations.
(I) "Depth of Melting by Pulsed Laser Irradiation", J. Narayan, Appl. Phys. Lett. 34, 312 (1979).
(II) "Growth of Dislocations During Laser Melting and Solidification", J. Narayan and F.W. Young,
Jr., Appl. Phys. Lett. 35, 330 (1979).
(III) "Melting Phenomenon and Properties of Defects associated with Pulsed Laser Irradiation", J.
Narayan and C.W. White, Phil. Mag. 43, 1515 (1981).
(IV) "Pulsed Laser Melting of Amorphous Silicon: Time-resolved Measurements and Model
Calculations", D.H. Lowndes, R.F. Wood and J. Narayan, Phys. Rev. Lett. 52, 561 (1983).
(3) Novel method for forming p-n junction by dopant deposition followed by laser melting and
solidification (U.S. Patent + IR-100 Award).
"P-n Junction Formation in Boron Deposited Silicon by laser-Induced Diffusion", J. Narayan, R.T.
Young, R.F. Wood and W.H. Christie, Appl. Phys. Lett. 33, 338 (1978).
(4) Invented a novel method for forming ohmic contacts on wide-band-gap semiconductors based laser
melting and interfacial reaction (U.S. Patent).
"Formation of Ohmic Contacts in Semiconducting Oxides", J. Narayan and V.N. Shukla, Appl. Phys.
Lett. 51, 3444 (1980).
(5) Formation of Supersaturated semiconductor alloys by laser melting and solid-phase-epitaxial growth
of dopant implanted layers and rapid quenching (U.S. Patent + IR-100 Award)
(I) "Formation of Metastable Supersaturated Solid Solutions...", J. Narayan and O.W. Holland, Appl.
Phys. Lett. 41, 239 (1982).
(II) "Interface Instability and Cell Formation in Ion Implanted and Laser Annealed Silicon", J.
Narayan, J. Appl. Phys. 52, 1289 (1981).
(III) "Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted silicon", J.
Narayan, O.W. Holland and B.R. Appleton, J. Vac. Sc. Tech. B1, 871 (1983).
(6) Transition to flame annealing or rapid thermal annealing of semiconductors —> Published first papers
in this area immense technological significance.
(I) "Flame Annealing of Arsenic- and Boron-Implanted Silicon", J. Narayan and R.T. Young, Appl.
Phys. Lett. 42, 466 (1983).
(II) "Rapid Thermal Annealing of Arsenic- and Boron-Implanted Silicon", J. Narayan et al., Appl.
Phys. Lett. 43, 957 (1983).
4
(7) Transition to Laser Surface Modification of Ceramics.
(I) "Ion Beam and Laser Mixing of Nickel Overlayers on Silicon Carbide", J. Narayan et al., Appl.
Phys. Lett. 56, 1577 (1984).
(II) "Laser Surface Modification of Metal-coated Ceramics", R.K. Singh, K. Jagannadham, and J.
Narayan, J. Mater. Res. 3, 1119 (1988).
(III) "Mechanisms of Improvement of Fracture Strength in Laser-Surface-Modified Ceramics", K.
Jagannadham and J. Narayan, J. Am. Ceram. Soc. 72, 1185 (1989).
(8) Transition to Laser Evaporation - Pulsed Laser Deposition of Thin Films (2U.S. Patents)
Published first experimental (concurrently with Bell Core Group) and theoretical papers on pulsed
laser deposition of thin films and obtained record critical current density (5.0x10 6A cm-2 at 77K)
value in PLD high Tc films.
(I) "Formation of Thin Films by a Laser Processing Method", J. Narayan et al., Appl. Phys. Lett. 51,
1845 (1987).
(II) "In-situ Processing of Epitaxial Y-Ba-Cu-O Thin Films" by R.K. Singh, J. Narayan, Appl. Phys.
Lett. 54, 2271 (1989).
(III) "A Novel Method for Simulating Laser-solid Interactions in Semiconductors and Layers
structures", R.K. Singh and J. Narayan, Mat. Sc. and Eng. B3, 217 (1989).
(IV) "Theoretical Model for Deposition of Superconducting Thin Films using Pulsed Laser
Evaporation Technique", R.K. Singh, O.W. Holland and J. Narayan, J. Appl. Phys. 68, 233
(1990).
(V) "Pulsed Laser Evaporation Technique for Deposition of Thin Films", R.K. Singh and J. Narayan,
Phys. Rev. B41, 8843 (1990).
(9) Invented Domain Epitaxy where integral multiples of lattice constants or major planes match across
the film-substrate interface, e.g., TiN/Si, Cu/TiN/Si, Ysz/Y123 (J. Narayan, U.S. Patent 5,406,123,
4/11/1995)
(I) "Epitaxial Growth of TiN Films on (100) Silicon Substrates by Laser Physical Vapor
Deposition", J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, Appl.
Phys. Lett. 61, 1290 (1992).
(II) "Epitaxial Growth in Large-Lattice-Mismatch Systems", T. Zheleva, K. Jagannadham and J.
Narayan, J. Appl. Phys. 75, 860 (1994).
(III)
"Pulsed Laser Deposition of Epitaxial Si/TiN/Si(100) Heterostructures", R. Chowdhury, X.
Chen and J. Narayan, Appl. Phys. Lett. 64 (10), 1236 (1994).
(IV)
"Pulsed Laser Deposition and Characterization of Epitaxial Cu/TiN/Si(100)
Heterostructures", R. Chowdhury, X. Chen, P. Tiwari and J. Narayan, Appl. Phys. Lett. 65,
2565 (1994).
(V)
“ Domain Matching Epitaxy- a Unified Paradigm for Thin Film Growth,” J. Narayan and
B.C. Larson, J. Appl. Phys. 93, 278(2003).
(10) Domain Matching Epitaxy for the Growth of III-nitrides, II-oxides and Perovskite based materials
on sapphire and silicon
(I) “Epitaxial Growth of AlN on Si(111),” R. D. Vispute, J. Narayan, H. Wu, J. Appl. Phys. 77,
4724(1995).
(II) “ High-Quality Epitaxial AlN on Sapphire (0001),” R. D. Vispute, H. Wu, J. Narayan, Appl. Phys.
Lett. 67, 1549(1995).
(III) “Defects and Interfaces in ZnO/Sapphire and AlN/ZnO/Sapphire Heterostructures,” J. Narayan , J.
Appl. Phys. 84, 2597(1998).
(IV) “ Novel Cubic ZnMgO Epitaxial Heterostructures on Si(100),” J. Narayan et. Al. Solid State Comm
121, 9(2002).
(V) “ Formation of Epitaxial Au/Ni/Au Ohmic Contacts,” J. Narayan et al. Appl. Phys. Lett. 81,
3978(2002).
5
(VI) “ Strain-induced tuning of metal-insulator transition in NdNiO3,” A. Tiwari, C. Jin, J, Narayan, Appl.
Phys. Lett. 80, 4039(2002).
(VII) “ Growth of Epitaxial NdNiO3 and Integration with Si(100),” A. Tiwari, C. Jin, J. Narayan,
Appl. Phys. Lett. 80, 1337(2002).
(VIII) “Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures,” J.
Narayan, P. Pant, A. Chugh, H. Choi, and J. C. C. Fan, J. Appl. Phys. 99, 054313 (2006).
(11) Fundamentals of Defects and Interfaces in Thin Film Heterostructures
(I) “ Misfit Dislocations in Ge/Si Heterostructures,” S. Oktyabrsky, H. Wu, J. Narayan, Phil Mag.
71,537(1995).
(II) “ New Mechanism of Formation of Stacking Faults in Ge/Si Heterostructures,” S. Oktyabrsky and J.
Narayan, Phil. Mag. 72, 305 (1995).
(III) “ Role of Surface Steps in Misfit Dislocation Nucleation and Critical Thickness Determination,” M.
Ichimura and J. Narayan, Mat Sci and Eng B 31, 299(1995).
(IV) “Atomic Study of Dislocation Nucleation in Ge/Si Heterostructures,” M. Ichimura and J. Narayan,
Phil. Mag. 72,281(1995).
(V) “ Negative Step Surface Energy Change and Misfit Dislocations in Semiconductor Heterostructures,”
M. Ichimura and J. Narayan, Phil. Mag. 72, 297(1995).
(VI) “ Formation of Misfit Dislocations in Thin Film Heterostructures,” J. Narayan and S. Oktyabrsky, J.
Appl. Phys. 92,7122(2002).
(VII) “Z-Contrast Imaging of Dislocation Cores at GaAs/Si Interface,” S. Lopatin, S. Pennycook, J.
Narayan, Appl. Phys Lett 81,2728(2002).
(12) Novel Nanostructured Materials: Narayan started his pioneering research on metal-ceramic
nanocomposites in 1981
(I) “Nickel Colloids in MgO,” J. Narayan, Y. Chen, and R. M. Moon, Phys. Rev. Lett 46, 1491(1981);
Phil. Mag. A 49,287(1984); Phil Mag. A49, 475(1984); US Patent # 4,376 755(March 15,1983).
(II) “ Size and Interface Control of novel Nanocrystalline Materials,” J. Narayan, J. Nanoparticle Res. 91,
7(2000).
(III) “ Structure and Properties of Nanocrystalline Zinc Films,” J. Narayan et al, J. Nanoparticle Res.
4,265(2002).
(IV) “ Mechanism of Grain Size Softening in Nanocrystalline Zn,” H. Conrad and J. Narayan, Appl. Phys
Lett. 81,2241(2002).
(V)“ Studies of Deformation Mechanisms in Ultra-fine-grained and Nanostructured Zn,” X. Zhang..and J.
Narayan, Acta Mater 50, 4823(2002).
(VI) “ Effect of Thickness Variation in High-efficiency InGaN/GaN LEDs,” J. Nrayan et al. Appl. Phys.
Lett 81, 841(2002).
(VII) “ Role of Self-assembled Gold Nanodots on Electrical and Optical Properties of ZnO,” A. Tiwari..
and J. Narayan, J. Nanoscience and Nanotechnology 3, 368(2003).
PATENTS of Professor Narayan (from USPTO Website)
PAT.
NO.
1
2
3
4
5
6
7
Titl
e
7,122,841
7,105,118
6,955,985
6,881,983
6,847,052
6,734,091
6,518,077
Bonding pad for gallium nitride-based light-emitting devices
Methods of forming three-dimensional nanodot arrays in a matrix
Domain epitaxy for thin film growth
Efficient light emitting diodes and lasers
Light-emitting diode device geometry
Electrode for p-type gallium nitride-based semiconductors
Method for making optoelectronic and microelectronic devices including cubic
6
8
6,423,983
9
10
11
5,453,153
5,406,123
5,221,411
12
13
14
15
16
17
5,208,182
5,063,202
5,021,119
4,885,052
4,863,877
4,774,630
18
4,376,755
19
4,261,764
20
21
4,181,538
4,147,563
ZnMgO and/or CdMgO alloys
Optoelectronic and microelectronic devices including cubic ZnMgO and/or
CdMgO alloys
Zone-melting recrystallization process
Single crystal titanium nitride epitaxial on silicon
Method for synthesis and processing of continuous monocrystalline diamond
thin films
Dislocation density reduction in gallium arsenide on silicon heterostructures
High transition temperature superconductors
Zone-melting recrystallization process
Zone-melting recrystallization process
Ion implantation and annealing of compound semiconductor layers
Apparatus for mounting a semiconductor chip and making electrical connections
thereto
Production of crystalline refractory metal oxides containing colloidal metal
precipitates and useful as solar-effective absorbers
Laser method for forming low-resistance ohmic contacts on semiconducting
oxides
Method for making defect-free zone by laser-annealing of doped silicon
Method for forming p-n junctions and solar-cells by laser-beam processing
PUB.
Title
APP. NO.
1
20090042751 Lubricant having nanoparticles and microparticles to enhance fuel efficiency,
and a laser synthesis method to create dispersed nanoparticles
2
20070280848 Methods Of Forming Alpha And Beta Tantalum Films With Controlled And
New Microstructures
3
20060266442 Methods of forming three-dimensional nanodot arrays in a matrix
4
20060130745 Domain epitaxy for thin film growth
5
20060016388 Domain epitaxy for thin film growth
6
20050161689 Efficient light emitting diodes and lasers
7
20050124161 Growth and integration of epitaxial gallium nitride films with silicon-based
devices
8
20040262621 Bonding pad for gallium nitride-based light-emitting devices
9
20040119064 Methods of forming three-dimensional nanodot arrays in a matrix
10
20040077135 Light-emitting diode device geometry
11
20040072381 Domain epitaxy for thin film growth
12
20040000671 Electrode for p-type gallium nitride-based semiconductors
13
20030160246 Efficient light emitting diodes and lasers
14
20030160229 Efficient light emitting diodes and lasers
15
20020084466 Optoelectronic and microelectronic devices including cubic ZnMgO and/or
CdMgO alloys
7
MOST SIGNIFICANT PUBLICATIONS IN ARCHIVAL JOURNALS FROM A TOTAL LIST OF
OVER 560 ARCHIVAL JOURNAL PAPERS
1. J. Narayan and J. Washburn, “Direct Observation of Pipe Diffusion in Magnesium Oxide,” Scripta Met.
6, 259 (1972).
2. J. Narayan and J. Washburn, “Self Climb of Dislocation Loops in Magnesium Oxide,” Phil. Mag. 26,
1179 (1972).
3. J. Narayan and J. Washburn, “Stability of Dislocation Loops Near a Free Surface,” J. Appl. Phys. 43,
4862 (1972).
4. J. Narayan and J. Washburn, “Self Diffusion in Magnesium Oxide,” Acta Met. 21, 533 (1973).
5. J. Narayan, “Coexistance of Two Charge Density Waves of Different Symmetry in Transition Metal
Dichalcogenide 4Hb-TaS2,” Appl. Phys. Lett. 29, 223 (1976).
6. J. Narayan and B. C. Larson, “Defect Clusters and Annealing in Self-Ion Irradiated Nickel,” J. Appl.
Phys. 48, 4536 (1977).
7. Y. Chen, H. T. Tohver, J. Narayan, and M. M. Abraham, “High Temperature and Ionization-Induced
Effects in Lithium-Doped MgO Single Crystals,” Phys. Rev. B 16, 5535 (1977).
8. J. Narayan and S. M. Ohr, “Residual Image Contrast of Dislocation Loops,” Phys. Stat. Sol. (a) 46, 281
(1978).
9. R. T. Young, C. W. White, G. J. Clark, J. Narayan, W. H. Christie, M. Murakami, P. W. King and S. D.
Kramer, “Laser Annealing of Boron Implanted Silicon,” Appl. Phys. Lett. 32, 139 (1978).
10. J. Narayan, R. T. Young and C. W. White, “ A Comparative Study of Laser and Thermal Annealing of
Boron Implanted Silicon,” J. Appl. Phys. 49, 3912 (1978).
11. R. T. Young and J. Narayan, “Laser Annealing of Diffusion-Induced Imperfection in Silicon,” Appl.
Phys. Lett. 33, 14 (1978).
12. J. Narayan, M. M. Abraham, H. T. Tohver and Y. Chen, “Electron Microscope Studies on Li-doped
MgO,” Phil. Mag. A 38, 247 (1978).
13. J. B. Lacy, M. M. Abraham, J. L. Boldu, Y. Chen, J. Narayan, and H. T. Tohver, “Oxidation and
Reduction of Lithium Containing Magnesium Oxide,” Phys. Rev. B18, 4136 (1978).
14. J. Narayan, R. T. Young, R. F. Wood and W. H. Christie, “P-n Junction Formation in Boron-Deposited
Silicon by Laser-Induced Diffusion,” Appl. Phys. Lett. 33, 338 (1978).
15. C. W. White, J. Narayan, B. R. Appleton and S. R. Wilson, “Impurity Segregation by Pulsed Laser
Irradiation,” J. Appl. Phys. 50, 2967 (1979).
16. C. W. White, J. Narayan, and R. T. Young, “Laser Annealing of Ion Implanted Semiconductors,”
Invited Article for Science Magazine 204, 461 (1979).
17. J. Narayan, “Depth of Melting Produced by Pulsed Laser Irradiation,” Appl. Phys. Lett. 34, 312 (1979).
18. J. Narayan and F. W. Young, Jr., “Growth of Dislocations During Laser Melting and Solidification,”
Appl. Phys. Lett. 35, 330 (1979).
19. R. T. Young, J. Narayan, and R. F. Wood, “Electrical and Structural Characteristics of Laser-Induced
Epitaxial Layers in Silicon,” Appl. Phys. Lett. 35, 448 (1979).
20. S. M. Ohr and J. Narayan, “Electron Microscope Observation of Shear Cracks in Stainless Steel Single
Crystals,” Phil. Mag. 41, 81 (1980).
21. J. Narayan, “Laser Annealing Under the Oxide Layers in Silicon,” Appl. Phys. Lett. 37, 66 (1980).
22. J. Narayan, “Laser Processing of Materials,” J. of Metals 33, 15 (1980).
23. H. R. Kerchner, J. Narayan, D. K. Christen and S. T. Sekula, “Fluxoid Pinning by Small Nitride
Precipitates in Niobium,” Phys. Rev. Lett. 44, 1146 (1980).
24. J. Narayan and V. N. Shukla, “Formation of Ohmic-Contacts in Semi-Conducting Oxides,” J. Appl.
Phys. 51, 3444 (1980).
25. J. Narayan and C. W. White, ”Melting Phenomenon and Properties of Defects Associated with Pulsed
Laser Irradiation,” Philos. Mag. 43, 1513 (1981).
8
26. Y. Chen, N. Dudney, J. Narayan and V. M. Orera, “Subthreshold [Li] Formation and Decoration of
Stained Regions in Crystalline MgO,” Phil. Mag. 44, 1783 (1981).
27. J. Narayan, “Interface Instability and Cell Formation in Ion-Implanted and Laser Annealed Silicon,” J.
Appl. Phys. 52, 1289 (1981).
28. J. Narayan, Y. Chen and R. M. Moon, “Nickel Colloids in Reduced Nickel-Doped MgO,” Phys. Rev.
Lett. 46, 1491 (1981).
29. J. Narayan and C. W. White, “Melting Phenomenon and Properties of Defects Associated with Pulsed
Laser Irradiation,” Phil. Mag. 43, 1515 (1981).
30. B. R. Appleton, O. W. Holland, J. Narayan,, O. E. Schow, III, J. S. Williams, K. T. Short, and E.
Lawson, “Characterization of Ion-Implanted Ge,” Appl. Phys. Lett. 41, 711 (1982).
31. J. Narayan, “Development of Morphological Instability and Formation of Cells in Silicon Alloys During
Pulsed-Laser Irradiation,” J. Cryst. Growth 59, 583 (1982).
32. J. Narayan, “Interface Structure during Solid-Phase-Epitaxial Growth in Ion-Implanted Semiconductors
and a Crystallization Model,” J. Appl. Phys. 53, 8607 (1982).
33. J. Narayan and O. W. Holland, “Formation of Metastable Supersaturated Solid Solutions in IonImplanted Silicon During Solid-Phase Crystallization,” Appl. Phys. Lett. 41, 239 (1982).
34. P. P. Pronko, A. K. Rai, O. W. Holland, B. R. Appleton, and J. Narayan, “The Material State of IonImplanted Cr in GaAs,” J. Appl. Phys. 53, 5621 (1982).
35. J. Narayan, O. W. Holland and B. R. Appleton, “Solid-Phase-Epitaxial Growth and Formation of
Metastable Alloys in Ion Implanted Silicon,” J. Voc. Sci. Tech. B1, 871 (1983).
36. O. W. Holland, B. R. Appleton, and J. Narayan, “Ion Implantation Damage and Annealing in
Germanium,” J. Appl. Phys. 54, 2295 (1983).
37. J. Narayan, O. W. Holland, R. E. Eby, J. J. Wortman, V. Ozguz, and G. A. Rozgonyi, “Rapid Thermal
annealing of Arsenic- and Boron-Implanted Silicon,” Appl. Phys. Lett. 43, 957 (1983).
38. J. Narayan and R. T. Young, “Flame Annealing of Arsenic- and Boron-Implanted Silicon,” Appl. Phys.
Lett. 42, 466 (1983).
39. D. H. Lowndes, R. F. Wood, and J. Narayan, “Pulsed Laser Melting of Amorphous silicon: TimeResolved Measurements and Model Calculations,” Phys. Rev. Lett. 52, 561 (1984).
40. J. Narayan and C. W. White, “Pulsed-Laser Melting of Amorphous Silicon Layers,” Appl. Phys. Lett.
44, 35 (1984).
41. S. J. Pennycook, J. Narayan, and O. W. Holland, “Point Defect Trapping in Solid-Phase Epitaxially
Grown silicon-Antimony Alloys,” J. Appl. Phys. 55, 837 (1984).
42. J. Narayan, Y. Chen, R. M. Moon, and R. W. Carpenter, “Characterization of Metal Precipitates in
Magnesium Oxide - Part I,” Philos. Mag. A49, 287 (1984).
43. J. Narayan and Y. Chen, “Physical Properties of Oxides Containing Metal Precipitates -Part II,” Philos.
Mag. A49, 475 (1984).
44. S. J. Pennycook, J. Narayan, and O. W. Holland, “Spatially Resolved Measurement of Substitutional
dopant Concentrations in Semiconductors,” Appl. Phys. Lett. 44, 547 (1984).
45. R. F. Wood, D. H. Lowndes, and J. Narayan, “Bulk Nucleation and Amorphous Phase Formation in
Highly Undercooled Molten silicon,” Appl. Phys. Lett. 44, 770 (1984)
46. O. W. Holland and J. Narayan, “Mechanism for Dynamic Annealing During High-flux Ion Irradiation
in Si,” Appl. Phys. Lett. 44, 758 (1984).
47. J. Narayan, D. Fathy, O. S. Oen, and O. W. Holland, “Atomic Structure of Ion Implantation Damage
and Process of Amorphization in Semiconductors,” J. Vac. Sci. Technol. A2, 1303 (1984).
48. J. Narayan and O. W. Holland, “Rapid Thermal Annealing of Ion-Implanted Semiconductors,” J.
Apppl. Phys. 56, 2913 (1984).
49. J. Narayan, D. Fathy, O. W. Holland, B. R. Appleton, R. F. Davis and P. F. Becher, “Ion-Beam and
Laser Mixing of Nickel Overlayers on Silicon Carbide,” J. Appl. Phys. 56, 1577 (1984).
50. S. J. Pennycook and J. Narayan, “Direct Imaging of Dopant Distributions in Silicon by STEM,” Appl.
Phys. Lett. 45, 385 (1984).
9
51. J. Narayan and O. W. Holland, “Characteristics of Ion Implantation Damage and Annealing Phenomena
in Semiconductors,” J. Electrochem. Soc. 131, 2651 (1984).
52. J. Narayan, C. W. White, O. W. Holland, and M. J. Aziz, “Phase Transformation and Impurity
Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers,” J. Appl. Phys. 56, 1821
(1984).
53. O. W. Holland, T. P. Sjoreen, D. Fathy, and J. Narayan, “The Influence of Substrate Temperature on the
Formation of Buried Oxide and Surface Crystallinity During High Dose Oxygen Implantation of Si,”
Appl. Phys. Lett. 45, 1081 (1984).
54. S. J. Pennycook, J. Narayan, and O. W. Holland, “Enhanced Diffusion from Interstitial Trapping solidPhase-Epitaxial Growth of Silicon Alloys,” J. Cryst. Growth 70, 597 (1984).
55. J. Narayan, “Properties of <100> Dislocations in Magnesium Oxide,” J. Appl. Phys. 57, 2703 (1985).
56. J. Narayan, O. W. Holland, W. H. Christie, and J. J. Wortman, “Rapid Thermal and Pulsed Laser
Annealing of BF2+ Implanted silicon,” J. Appl. Phys. 57, 2709 (1985).
57. S. J. Pennycook, and J. Narayan, “Atom Location by Axial Electron channeling Analysis,” Phys. Rev.
Lett. 54, 1543 (1985).
58. S. J. Pennycook, J. Narayan, and O. W. Holland, “Transient Enhanced Diffusion During furnace and
Rapid thermal Annealing of Ion-Implanted Silicon,” J. Electrochem. Soc. 132, 1962 (1985).
59. K. Vedam, P. J. McMarr, and J. Narayan, “Spectroscopic Ellipsometry, A New Tool for Nondestructive
Depth-Profiling and Characterization of Interfaces,” Appl. Phys. Lett. 47, 339 (1985).
60. K. Jagannadham and J. Narayan, “Elastic Strain Energy and Forces on Point Defects in a Two-Phase
Medium,” J. Mat. Res. 1, 193 (1986).
61. J. Narayan, T. A. Stephenson, T. Boat, D. Fathy, and S. J. Pennycook, “Formation of Solicides by Rapid
Thermal Annealing over Polycrystalline Silicon,” J. Appl. Phys. 60, 631 (1986).
62. N. M. Ravindrra and J. Narayan, “Optical Properties of Amorphous Silicon and Silicon Oxide,” J. Appl.
Phys. 60, 1139 (1986).
63. S. J. Pennycook, R. J. Culbertson, and J. Narayan, “Formation of Stable Dopant Interstitials During Ion
Implantation of silicon,” J. Mater. Res. 1 (3) 476 (1986).
64. P. J. McMarr, K. Vedam, and J. Narayan, “Spectroscopic Ellipsometry: A new tool for nondestructive
depth profiling and characterization of interfaces,” J. Appl. Phys. 59, 694 (1986).
65. K. Jagannadham and J. Narayan, “Modification of Dopant Profiles due to Surface and Interface
Interactions: Applications to Semiconductor Materials,” J. Appl. Phys. 61, 987 (1987).
66. N. M. Ravindrra and J. Narayan, “Optical Properties of Silicon Related Insulators,” J. Appl. Phys. 61,
2017 (1987).
67. N. M. Ravindrra, J. Narayan, D. Fathy, J. K. Srivastava and E. A. Irene, “Silicon Oxidation and Si-SiO2
Interfaces of Thin Oxides,” J. Mater. Res. 2, 216 (1987).
68. A. S. Nandedkar and J. Narayan, “Atomic Structure of Dislocations and Dipoles in Silicon,” Phil. Mag.
A56, 625 (1987).
69. J. Narayan, Y. Chen, and K. Tsang, “Metallic Colloids in Plastically Deformed MgO:Ni Crystals,” Phil.
Mag. A55, 807 (1987).
70. J. Narayan and K. Vedam, “Formation of SOI and Nondestructive Characterization Ion Implanted SOI
Layers,” Appl. Phys. Lett. 51, 343 (1987).
71. J. Narayan and K. Jagannadham, “Effect of free Surface and Interface on Thermal Annealing of
Dislocation Loops in silicon,” J. Appl. Phys. 62, 1694 (1987).
72. K. Jagannadham and J. Narayan, “The Elastic field Associated with a Square Loop in a Two Phase
Medium,” J. Appl. Phys. 62, 1698 (1987).
73. J. Narayan et al., “Microstructure and Properties of YBa2Cu3O7-d Superconductors with Transitions at
90 and near 290K,” Appl. Phys. Lett. 51, 914 (1987).
74. J. Narayan et al., “Formation of superconducting Films by a Novel Laser processing Method,” Appl.
Phys. Lett. 51, 1845 (1987).
75. J. Narayan, “Microstructure and Properties of Novel high-Tc Superconductors,” J. of Metals, 41, 18
(1988).
10
76. J. Narayan, A. R. Srivatsa, M. Peters, S. Yokota, and K. V. Ravi, “On Epitaxial Growth of Diamond
Films on (100) silicon Substrates,” Appl. Phys. Lett. 53, 1823 (1988).
77. R. K. Singh, K. Jagannadham, and J. Narayan, “Laser Surface Modification of Metal Coated Ceramics,”
J. Mater. Res. 3, 1119 (1988).
78. R. K. Singh and J. Narayan, “A Novel Method for Simulating Laser-Solid Interactions in
Semiconductors and Layered Structures,” Mat. Sci. and Engr. B3, 217 (1989).
79. J. Narayan and A. R. Srivatsa, “Mechanism of formation of <100> oriented Fivefold Crystallites in
Diamond Films,” Appl. Phys. Lett. 59, 1659 (1989).
80. K. Jagannadham and J. Narayan, “Mechanisms of Improvement in Fracture Strength in Laser-Surface
Modified Ceramics,” J. Amer. Cer. Soc. 72, 1185 (1989).
81. J. Krishnaswamy, A. Rengan, J. Narayan, K. Vedam and C. J. McHaurge, “Thin Film Deposition by a
New Laser Ablation and Plasma hybrid Technique,” Appl. Phys. Lett. 54, 2455 (1989).
82. K. Jagannadham and J. Narayan, “Modelling of Microstructural Features in Y-Ba-Cu-O
Superconductors,” Phil Mag. A59, 917 (1989).
83. A. S. Nandedkar and J. Narayan, “Atomic Structure of 60 and 90 Dislocations in Ge/Si Systems and
Critical Phenomena,” Mat. Sci. and Engr. A113, 51 (1989).
84. K. Jagannadham and J. Narayan, “Self-consistent Approach for critical Thickness during Threedimensional Epitaxial Growth,” Mat. Sci. and Engr. A113, 65 91989).
85. A. R. Srivatsa, S. Sharan, O. W. Holland, and J. Narayan, “Nature of Interfaces and Oxidation Processes
in Ge+ Implanted Silicon,” J. Appl. Phys. 65, 4028 (1989).
86. S. Sharan and J. Narayan, “Critical Thickness and Strain Relief Mechanisms in Semiconductor
Heterostructures, J. Appl. Phys. 66, 2376 (1989).
87. R. K. Singh, J. Narayan, A. K. Singh, and J. Krisnaswamy, “In-situ Processing High-Tc
Superconducting Y-Ba-Cu-O Thin Films,” Appl. Phys. Lett. 54, 2271 (1989).
88. J. Narayan, s. Sharan, and J. C. C. Fan, “Dislocation and Interfaces in Semiconductor Heterostructures,”
J. of Metals 41, 10 (1989).
89. R. K. Singh, L. Ganapathi, P. Tiwari and J. Narayan, “Effect of Processing Geometry in Oxygen
Incorporation and In-situ Formation of YBa2Cu3O7 Superconducting Thin Films by Pulsed Laser
Evaporation Technique,” Appl. Phys. Lett. 55, 2351 (1989).
90. N. Biunno, J. Narayan, A. R. Srivatsa, and O. W. Holland, “Laser Deposition of Epitaxial TiN Films on
(100) MgO,” Appl. Phys. Lett. 55, 405 (1989).
91. R. K. Singh and J. Narayan, Pulsed Laser Evaporation Technique for Deposition of Thin Films: physics
and Theoretical Model,” Phys. Rev. B41, 8843 (1990).
92. R. K. Singh, O. W. Holland, and J. Narayan, “Theoretical Model for Deposition of Thin films Using
Pulsed Laser Evaporation Technique,” J. Appl. Phys. 68, 233 (1990).
93. K. Jagannadham and J. Narayan, “Critical current Density and Atomic Structure of Grain Boundaries in
High Tc Superconductors,” Phil. Mag. A61, 129 (1990).
94. R. Singh, S. Sinha, N. J. Hsu, P. Chou, R. K. Singh, and J. Narayan, “Superconducting Thin Films of YBa-Cu-O Prepared by Metal-Organic Chemical Vapor Deposition,” J. Appl. Phys. 1990, Vol. 67, pp.
1562-1565.
95. R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, “Role of In-Situ Rapid Isothermal
Processing the Solid Phase Epitaxial Growth of II-A fluoride Films on InP,” Appl. Phys. Lett., 1990,
Vol. 56, pp. 247-249, and 1990, Vol. 56, p. 1808.
96. R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, “Structural Properties of Solid Phase
Epitaxial Films of BaF2 on (100) InP Formed by In-Situ Rapid Isothermal Processing,” J. Appl. Phys.,
Vol.67, 1990, pp. 6411-6414.
97. J. Narayan, “Dislocations, twins, and grain Boundaries in CVD Diamond Thin Films,” J. Mater. Res.
15, 2414 (1990).
98. R. K. Singh and J. Narayan, “Nature of Epitaxial Growth of high-Tc Laser Deposited Y-Ba-Cu-O Films
on (100) SrTiO3 Substrates,” J. Appl. Phys. 67, 3658 (1990).
11
99. R. K. Singh and J. Narayan, “ion Beam Analysis and Oxygen determination in High-Tc YBa2Cu3O7
superconducting Thin Films,” J. Mat. Res. 5, 1793 (1990)
100. R. K. Singh, A. K. Singh, and J. Narayan, “In-Situ Patterned Laser Deposition of High Tc Y-Ba-Cu-O
superconducting Thin Films,” J. Appl. Phys. 67, 3448 (1990).
101. R. K. Singh, A. K. Singh, and J. Narayan, “Epitaxial Single Crystal Laser Deposition of Y-Ba-Cu-O
Superconducting Thin Films on YS-ZrO2 Substrates at Low Processing Temperatures,” J. Appl. Phys.
67, 3452 (1990).
102. Ashok Kumar, L. Ganapathi, and J. Narayan, “In-Situ Processing of Textured Thin Films of 110K in
Bi(-Pb)-Ca-Sr-Cu-O by Excimer Laser Ablation,” Appl. Phys. Lett. 56, 2034 (1990).
103. N. V. Nguyen, K. Vedam and J. Narayan, “Characterization of the Interface Between Ge+ Implanted
Crystalline silicon and Thermally Grown Oxide by Spectroscopic Ellipsometry,” J. Appl. Phys. 67,
599 (1990).
104. R. K. Singh, D. Bhattacharya and J. Narayan, “Sub-Surface Heating Effects During Pulsed Laser
Evaporation of Materials,” Appl. Phys. Lett. 57, 2022 (1990).
105. D. K. Christen, C. E. Klabunde, R. Feenstra, D. H. Lowdnes, D. P. Norton, J. D. Budai, H. R.
Kerchner, J. R. Thompson, L. A. Boatner, J. Narayan, and R. Singh, “Transport Dissipation Effects in
Y-Ba-Cu-O Thin Films,” Physica C 165-166, 1415 (1990).
106. J. Narayan and A. S. Nandedkar, “Atomic Structure and Energy of Grain Boundaries in Silicon,
Germanium and Diamond,” Phil. Mag. B63, 1181 (1991).
107. J. Narayan, V. P. Godbole, and C. W. White, “Laser Method for Processing Continuous Diamond Thin
Films,” Science 252, 416 (1991); Research News in Science 252, 375 (1991).
108. J. Narayan and S. Sharan, “Mechanism of Formation of 60 and 90 dislocations in Semiconductor
Heterostructures,” Materials Sci. and Engr., B10, 261 (1991).
109. R. K. Singh, D. Bhattacharya and J. Narayan, “Improvement in Superconducting Properties of Silver
Doped Y-Ba-Cu-O Thin Films,” Appl. Phys. Lett. 60, 255 (1992).
110. K. Jagannadham and J. Narayan, “Depression of Order Parameter and Effect on Grain Boundary
Critical Current Density,” Mat. Sci. and Engr., B14, 214 (1992).
111. J. Narayan, V. P. Godbole, G. Matera, and R. K. Singh, “Enhancement of Nucleation and Adhesion of
Diamond Films on Copper, Stainless Steel, and Silicon Substrates,” J. of Appl. Phys. 71 (2), 966
(1992).
112. J. Narayan and X. Chen, “Laser Pattering of Diamond Films,” J. of Appl. Phys. 71 (8), 3795 (1992).
113. V. P. Godbole and J. Narayan, “Synthesis of Diamond Films on Hastealloy,” J. Mater. Res. 7, 2785
(1992).
114. J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, “Epitaxial Growth of TiN
Films on (100) Silicon Substrates by Laser Physical Vapor Deposition,” Appl. Phys. Lett. 61, 1290
(1992).
115. R. K. Singh, D. Bhattacharya, and J. Narayan, “Control of Surface Particle Density in Pulsed Laser
Deposition of superconducting Y1Ba2Cu3O7 and Diamondlike Carbon Thin Films,” Appl. Phys. Lett.
61, 483 (1992).
116. S. Pramanick and J. Narayan, “Effect of Processing Geometry on YBa2Cu3O7-x Plasma Emission
During Superconducting Thin Film Growth of Pulsed Laser Evaporation Technique,” J. Appl. Phys.
73, 316 (1993).
117. P. Tiwari, R. Singh, and J. Narayan, “Evaluation of Physical and Electrical Properties of CoSi2 Thin
Films on (100) Si by Laser Physical Vapor Deposition,” Philosophical Mag. B68, 413 (1993).
118. X. Chen and J. Narayan, “Effect of the Chemical Nature of Transition-Metal Substrates on Chemical
Vapor Deposition of Diamond,” J. Appl. Phys. 74, 4168 (1993).
119. P. Tiwari, T. Zheleva, and J. Narayan, “Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on 9100) Si With
Textured Y1Ba2Cu3O7 and YSZ Buffer Layers by LPVD,” Appl. Phys. Lett. 63, 30 (1993).
120. J. Narayan, J. Reddy, N. Biunno, S. M. Kanetkar, P. Tiwari, and N. Parikh, “Ion Assisted Laser
Processing of CNx Films,” Mat. Sci. and Engr. B26, 49 (1994).
12
121. K. Jagannadham and J. Narayan, “ Invited Review - Microstructure and Properties of HighTemperature superconducting Materials,” Mat. Sci. and Engr. B26, 75 (1994).
122. S. Bhargava, H. D. Bist, S. B. Samanta, A. V. Narlikar, A. Rengan, and J. Narayan, “Nanoclusters in
Laser Ablated Diamondlike Films Through Scanning Tunneling Microscopy,” Solid State Comm. 90,
205 (1994).
123. T. Zheleva, K. Jagannadham, and J. Narayan, “Epitaxial Growth in Large-Lattice-Mismatch Systems,”
J. Appl. Phys. 75, 860 (1994).
124. R. Chowdhury, X. Chen, and J. Narayan, “Pulsed Laser Deposition of Epitaxial Si/TiN/Si(100)
Heterostructures,” Appl. Phys. Lett. 64 (10), 1236 (1994).
125. J. Narayan, W. D. Fan, R. J. Narayan, P. Tiwari and H. H. Stadelmaier, “Diamond, Diamondlike and
Titanium Nitride Biocompatible Coatings for Human Body Parts,” Mat. Sci. and Engr. B25, 5 (1994).
126. J. Narayan, P. Tiwari, K. Jagannadham, and O. W. Holland, “Formation of Epitaxial and Textured
Films on Ceramics - (100) MgO Single Crystals by Pulsed Laser Deposition,” Appl. Phys. Lett. 64,
2093 (1994).
127. J. Narayan, R. Raghunathan, R. Chowdhury, and K. Jagannadham, “On the Mechanism of Combustion
of Silicon Carbide,” J. Appl. Phys. 75, 7252 (1994).
128. W. D. Fan, X. Chen, K. Jagganadham, and J. Narayan, “Diamond-ceramic Composite Tool Coatings,”
J. Mat. Res. 9, 2850 (1994).
129. M. O. Aboelfotoh, S. Oktyabrsky, and J. Narayan, “Microstructure Characterization of Cu3Ge/n-type
GaAs Ohmic Contacts,” J. Appl. Phys. 76, 5760 (1994).
130. R. D. Vispute, R. Chowdhury, P. Tiwari and J. Narayan, “Pulsed Laser Deposition and
Characterization of Epitaxial Cu/TiN/Si(100) Heterostructures,” Appl. Phys. Lett. 65, 2565 (1994).
131. R. K. Singh, S. Harkness, P. Tiwari, J. Narayan, C. Jahncke, and M. Paesler, “Existence of
Superconductivity in Chain Disordered YBa2Cu3O7-d,” Phys. Rev. B51(14), 9155 (1995).
132. S. Oktyabrsky, H. Wu, R. D. Vispute and J. Narayan, “Misfit Dislocations in Low-Temperature Grown
Ge/Si Heterostructures,” Phil. Mag. A71, 537 (1995).
133. M. Ichimura and J. Narayan, “Role of Surface Step on Misfit Dislocation Nucleation and Critical
Thickness in Semiconductor Heterostructures,” Mat. Sci. and Engr. B31, 299 (1995).
134. M. Ichimura and J. Narayan, “Negative Surface Energy in Semiconductor Heterostructures,” Phil.
Mag. A72, 297 (1995).
135. M. Ichimura and J. Narayan, “Atomic Study of Dislocation Nucleation in Ge/(001)Si
Heterostructures,” Phil. Mag. A72, 281 (1995).
136. S. Oktyabrsky and J. Narayan, “New Mechanism of Formation of Stacking Faults in Ge/(001)Si
Heterostructures,” Phil. Mag. A72, 305 (1995).
137. R. D. Vispute, Hong Wu and J. Narayan, “High Quality Aluminum Nitride Layers on Sapphire by
Pulsed Laser Deposition,” Appl. Phys. Lett. 67, 1549 (1995).
138. J. Narayan R. D. Vispute, and K. Jagannadham,” Interfacial Processing and Adhesion of Diamond,
Diamondlike Carbon and TiN Films on Metallic and Polymeric Substrates,” J. Adhesion Sci. Technol.
9, 753 (1995).
139. V. P. Godbole, K. Jagannadham, and J. Narayan, “Synthesis of Diamond Films on AIN Coated
Nickel,” Appl. Phys. Lett. 67, 1322 (1995).
140. M. Ichimura and J. Narayan, “Atomic Study of Partial Misfit dislocations in Ge/(001)Si
Heterostructures,” Phil. Mag. A73, 767 (1996).
141. V. P. Godbole and J. Narayan, “Aluminum Nitride Buffer Layer for Diamond Growth on Steels,” J.
Mat. Res. 11(7), 1810 (1996).
142. T. Zheleva, K. Jagannadham, R. D. Vispute, S. Oktyabrsky, and J. Narayan, “Characterization of
Highly Oriented (110) TiN Films Grown on Epitaxial Ge/Si(001) Heterostructures,” J. Mat. Res. 11,
399 (1996).
143. V. Weihnacht, W. D. Fan, K. Jagannadham, J. Narayan and C. T. Liu, “A New Design of Tungsten
Carbide Tools with Diamond Coatings,” J. Mat. Res. 11, 2220 (1996).
13
144. J. Narayan, H. Wu and R. D. Vispute, “Laser Processing of BN and AlN Films,” J. Elect. Mat. 25, 143
(1996).
145. S. Oktyabrsky, M. O. Aboelfotoh, J. Narayan, and J. M. Woodall, “Cu3Ge Ohmic contacts to n-type
GaAs,” J. Elect. Mat. 25, 1662 (1996).
146. S. Oktyabrsky, M. O. Aboelfotoh, and J. Narayan, “Microstructure and Chemistry of Cu-Ge Ohmic
Contact Layers to GaAs,” J. Elect. Mat. 25, 1673 (1996).
147. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, “Epitaxial Aluminum Nitride Thin Films
on Two Orientations of Sapphire,” J. Appl. Phys. 79, 2439 (1996).
148. M. A. Borek, S. Oktyabrsky, M. O. Aboelfotoh, and J. Narayan, “Low Resistivity Copper Germanide
on (100) Si contacts and Interconnections,” Appl. Phys. Lett. 69, 3560-3562 (1996).
149. R. D. Vispute, J. Narayan, K. Dovidenko, K. Jagannadham, N. Parikh, A. Suvkhanov, J. D. Budai,
“Heteroepitaxial Structures of SrTiO3/TiN on Si(100) by In-situ Pulsed Laser Deposition,” J. Appl.
Phys. 80 (1996), No.12, p. 6720-6724.
150. R. Chowdhury, R. D. Vispute, K. Jagannadham, and J. Narayan, “Cahracteristics of Titanium Nitride
Films Grown by Pulsed Laser Deposition,” J. Mat. Res. 11 (1196), No.6, 1458-1469.
151. K. Jagannadham, W. D. Fan, R. Komanduri, and J. Narayan, “Comparison of Diamond composite
Coatings with Polycrystalline Diamond and Polycrystalline BN Layers on WC Tools,” J. Vac. Sci. and
Technol. A15, 2262 (1997).
152. M. O. Aboelfotoh, S. Oktyabrsky, J. Narayan, and J. M. Woodall, “Electrical and Microstructural
Characteristics of Ge/Cu Ohmic Contacts to n-type GaAs,” J. Mat. Res. 12, 2325 (1997).
153. A. K. Sharma and J. Narayan, “Synthesis and Processing of Superhard Carbon Nitride Solids (Invited
Review),” International Materials Reviews 42, 137 (1997).
154. S. R. Kalyanraman, R. D. Vispute, S. Oktyabrsky, K. Dovidenko, K. Jagannadham, and J. Narayan,
“Influence of Oxygen Background Pressure on Crystallinity of SrTiO3 Films Grown on MgO by
PLD,” Appl. Phys. Lett. 71, 1709 (1997).
155. R. D. Vispute, J. Narayan, and J. D. Budai, “High-quality Optoelectric Grade Epitaxial AlN Films on
a-Al2O3, Si and 6H-SiC by PLD,” Thin Solid Films 11, 171 (1997).
156. M. Q. Ding, A. F. Myers, S. M. Campausen, J. Narayan, J. J. Cuomo, J. J. Hren, and J. Bruley, “Field
Emission from Amorphous Diamond Coated Mo Tip Emitters by Pulsed Laser Deposition,” J. Vac.
Sci. Technol. B15, 840 (1997).
157. K. Dovidenko, S. Oktyabrsky, and J. Narayan, “Characteristics of Stacking Faults in AlN Thin Films,”
J. Appl. Phys. 82, No.9, 4296-4299 (1997).
158. J. Narayan, K. Dovidenko, A. Sharma, and S. Oktyabrsky, “Defects and Interfaces in Epitaxial
ZnO/Al2O3 and AlN/ZnO/a-Al2O3 Heterostructures,” J. Appl. Phys. 84, 2597 (1998).
159. K. Jagannadham, A. K. Sharma, Q. Wei, R. Kalyanraman, and J. Narayan, “Structural Characteristics
of AlN Films by PLD and Magnetron sputtering: A Comparative Study,” J. Vac. Sci. Technol. A16(5),
2805 (1998).
160. M.O. Aboelfotoh, M.A. Borek, M.A., J. Narayan, Ohmic contact to P-type Gaas using Cu3Ge. Appl.
Phys. Lett., 75, 3953 (1999).
161. A.K. Sharma, A. Kvit, J. Narayan, Growth of single crystal MgO on TiN/Si heterostructure by
pulsed laser deposition. J. Vacuum Sci. & Tech. A, 17, 3393(1999).
162. A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, C. Jin, A. Kvit, R.M. Kolbas, O.W. Holland,
Optical and structural properties of epitaxial MgxZn1-xO alloys. Appl. Phys. Lett., 75, 3327 (1999).
163. Q, Wei, R.J. Narayan, A.K. Sharma, J. Sankar, J. Narayan, Preparation and mechanical properties of
composite diamond-like carbon thin films. J. of Vacuum Sci. & Tech. A, 17, 3406 (1999).
14
164. Q. Wei, J. Sankar, A.D. Kelkar, J. Narayan, Microstructure evolution accompanying high
temperature; uniaxial tensile creep of self-reinforced silicon nitride ceramics. Mat. Sci. Engg. A, 272,
380 (1999).
165. Q. Wei, J. Sankar, A.D. Kelkar, J. Narayan. Mechanical properties of diamond-like carbon
composite thin films prepared by pulsed laser deposition. Composites: Part B, Engineering, 30, 675
(1999).
166. K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi, Study of thin films polarity of group III
nitrides. MRS Internet J. of Nitride Semiconductor Res., 4S1 G6.46 (1999).
167. V.P. Godbole, R. Narayan, Z. Xu, J. Narayan, J. Sankar, Diamond films and composites on cobaltchromium alloys. Mat. Sci. Engg. B, 58, 251 (1999).
168. R. Kalyanaraman, S. Oktyabrsky, J. Narayan, The role of Ag in the pulsed laser growth of YBCO
thin films. J. of Appl. Phys., 85, 6636 (1999).
169. S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V, Joshkin, J. Narayan, Crystal structure and defects in
nitrogen-deficient GaN. MRS Internet J. of Nitride Semiconductor Res., 4S1 G6.46 (1999).
170. S. Oktyabrsky, K. Dovidenko, A.K. Sharma, J. Narayan, V. Joshkin, Cubic GaN formation under
nitrogen-deficient conditions. Appl. Phys. Lett., 74, 2465 (1999).
171. J.F. Muth, R.M. Kolbas, A.K. Sharma, S. Oktyabrsky, J. Narayan, Excitonic structure and adsorption
coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition. J. of
Appl. Phys., 85, 7884 (1999).
172. Y. Yamagata, A. Sharma, J. Narayan, R.M. Mayo, J.W. Newman, K. Ebihara, Optical emission
study of ablation plasma plume in the preparation of diamond-like carbon films by KrF excimer laser. J.
of Appl. Phys., 86, 4154 (1999).
173. M.O. Aboelfotoh, M.A. Borek, J. Narayan, Interaction of Cu and Cu3Ge thin films with Si1-xGex
alloys. Appl. Phys. Lett., 75, 1739 (1999).
174. K.M. Hassan, A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, R.M. Kolbas, Optical and structural
studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. Appl. Phys.
Lett., 75, 1222 (1999).
175. R.M. Mayo, J.W. Newman, A. Sharma, Y. Yamagata, J. Narayan, Electrostatice measurement of
plasma plume characteristics in pulsed laser evaporated carbon. J. of Appl. Phys., 86, 2865 (1999).
176. V.P. Godbole, K. Dovidenko, A.K. Sharma, J. Narayan, Thermal reactions and micro-structure of
TiN-AlN layered nano-composites. Mat. Sci. Engg. B, 68, 85 (1999).
177. A.K. Sharma, J. Narayan, C. Jin, A. Kvit, A, S. Chattopadhyay, C. Lee, Integration of
Pb(Zr0.52Ti.0.48) O-3 epilayers with Si by domain epitaxy. Appl. Phys. Lett., 76, 1458 (2000).
178. M.O. Aboelfotoh, M.A. Borek,, J. Narayan, Microstructure and electrical resistivity of Cu and
Cu3Ge thin films on Si1-xGex alloy layers, J. of Appl. Phys., 87, 365 (2000).
15
179. C.W. Teng, J.F. Muth, U. Ozgur, M.J. Bergmann, H.O. Everitt, A.K. Sharma, C. Jin, J. Narayan,
Refractive indices and adsorption coefficients of MgxZn1-xO alloys. Appl. Phys. Lett., 76, 979 (2000).
180. Q. Wei, J. Sankar, A.K. Sharma, S. Oktyabrsky, J. Narayan, R.J. Narayan, Atomic structure,
electrical properties, and infrared range optical properties of diamondlike carbon films containing foreign
atoms prepared by pulsed laser deposition. J. Mat. Res., 14, 633 (2000).
181. S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, III-nitrides: Growth, characterization, and
properties. J. of Appl. Phys., 87, 965 (2000).
182. C.W. Teng, J.F. Muth, R.M. Kolbas, K.M. Hassan, A.K. Sharma, A. Kvit, J. Narayan, Quantum
confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al203 or an AlN Matrix.
Appl. Phys. Lett., 76, 43 (2000).
183. H. Conrad, J. Narayan, On the grain size softening in nanocrystalline materials. Scripta Materialia,
42, 1025 (2000).
184. A.K. Sharma, R.J. Narayan, J. Narayan, J. Kasichainula, Structural and tribological characteristics of
diamond-like carbon films deposited by pulsed laser ablation. Mat. Sci. Engg. B, 77, 139 (2000).
185. Y. Yamagata, A. Sharma, J. Narayan, R.M. Mayo, J.W. Newman, K. Ebihara, Comparative study of
pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon target – part I
optical emission spectroscopy. J. Appl. Phys., 88, 6861 (2000).
186. R.M. Mayo, J.W. Newman, Y. Yamagata, A. Sharma, J. Narayan, Comparative study of pulsed laser
ablated plasma plumes from single crystal graphite and amorphous carbon targets – part II electrostatic
probe measurements. J. Appl. Phys., 88, 6868-6874 (2000)
187. J. Narayan, Size and interface control of novel nanocrystalline materials using pulsed laser
deposition. J. Nanoparticle Research, 91, (2000).
188. A.K. Sharma, J. Narayan, R.J. Narayan, K. Jagannadham, Structural and Tribological characteristics
of diamondlike carbon films. Mat. Sci. Engg. B, 77, 139 (2000).
189. J. Narayan and Q. Wei, Superhard diamonlike carbon: preparation, theory and properties. Int. Mat.
Rev. (Invited), 45, 133 (2000).
100 Recent Publications in Archival Journals from Prof. Narayan’s Group
1.
Title: Raman Studies of GaN/sapphire thin film heterostructures
Author(s): Hushur, A; Manghnani, MH; P; Narayan, J.
Source: JOURNAL OF APPLIED PHYSICS Volume: 106 Issue: 5 Article Number:
054317 Published: 2009
2.
Title: Thin film epitaxy and structure property correlations for non-polar ZnO films
Author(s): Pant, P; Budai, JD; Aggarwal, R; Narayan, RJ; Narayan, J
Source: ACTA MATERIALIA Volume: 57 Issue: 15 Pages: 4426-4431 Published:
2009
3.
Title: Formation of single and multiple deformation twins in nanocrystalline fcc metals
Author(s): Zhu, YT; Narayan, J; Hirth, JP; Mahajan, S; Wu, XL; Liao, XZ
16
Source: ACTA MATERIALIA Volume: 57 Issue: 13 Pages: 3763-3770 Published:
2009
4.
Title: Twinning partial multiplication at grain boundary in nanocrystalline fcc metals
Author(s): Zhu, YT; Wu, XL; Liao, XZ, et al.
Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 3 Article Number:
031909 Published: 2009
5.
Title: Defect mediated room temperature ferromagnetism in VO2 thin films
Author(s): Yang, TH; Nori, S; Zhou, H; and Narayan, J.
Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 10 Article Number:
102506 Published: 2009
6.
Title: The synthesis and magnetic properties of a nanostructured Ni-MgO system
Author(s): Narayan, J; Nori, S; Ramachandran, S, et al.
Source: JOM Volume: 61 Issue: 6 Pages: 76-81 Published: 2009
7.
Title: New frontier in thin film epitaxy and nanostructured materials
Author(s): Narayan, J
Source: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY Volume: 6 Issue:
5-6 Pages: 493-510 Published: 2009
8.
Title: Magnetic Properties of Self-Assembled Ni Nanoparticles in Two Dimensional
Structures
Author(s): Gupta, A; Narayan, J; Kumar, D
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume:
9 Issue: 6 Pages: 3993-3996 Published: 2009
9.
Title: Structural characterization of two-step growth of epitaxial ZnO films on sapphire
substrates at low temperatures
Author(s): Pant, P; Budai, JD; Aggarwal, R, et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue:
10 Article Number: 105409 Published: 2009
10.
Title: Magnetic properties and their dependence on deposition parameters of Co/Al2O3
multilayers grown by pulsed laser deposition
Author(s): Aggarwal, R; Nori, S; Jin, CM, et al.
Source: ACTA MATERIALIA Volume: 57 Issue: 6 Pages: 2040-2046 Published:
2009
11.
Title: MoOx modified ZnGaO based transparent conducting oxides
Author(s): Dutta, T; Gupta, P; Bhosle, V, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 105 Issue: 5 Article Number:
053704 Published: 2009
12.
Title: Plasma plume dynamics in magnetically assisted pulsed laser deposition
Author(s): Haverkamp, JD; Bourham, MA; Du, S, et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 2 Article
Number: 025201 Published: 2009
13.
Title: Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized
zirconia buffer layer
Author(s): Aggarwal, R; Jin, CM; Pant, P, et al.
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 25 Article Number:
17
251905 Published: 2008
14.
Title: Self-thickening, cross-slip deformation twinning model
Author(s): Narayan, J; Zhu, YT.
Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 15 Article Number:
151908 Published: 2008
15.
Title: Comparative Raman and HRTEM Study of Nanostructured GaN Nucleation Layers
and Device Layers on Sapphire (0001)
Author(s): Pant, P; Narayan, J; Wushuer, A, et al.
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume:
8 Issue: 11 Pages: 5985-5992 Published: 2008
16.
Title: Defect dependent ferromagnetism in MgO doped with Ni and Co
Author(s): Narayan, J; Nori, S; Pandya, DK, et al.
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 8 Article Number:
082507 Published: 2008
17.
Title: Observation of room temperature ferromagnetism in Ga : ZnO: A transition metal
free transparent ferromagnetic conductor
Author(s): Bhosle, V; Narayan, J
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 2 Article Number:
021912 Published: 2008
18.
Title: Deformation twin formed by self-thickening, cross-slip mechanism in
nanocrystalline Ni
Author(s): Wu, XL; Narayan, J; Zhu, YT
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 3 Article Number:
031910 Published: 2008
19.
Title: Plasma instabilities in magnetically assisted pulsed laser deposition
Author(s): Haverkamp, JD; Bourham, MA; Du, S, et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 41 Issue:
11 Article Number: 115206 Published: 2008
20.
Title: Structure-magnetic property correlations in the epitaxial FePt system
Author(s): Trichy, GR; Chakraborti, D; Narayan, J, et al.
Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 10 Article Number:
102504 Published: 2008
21.
Title: Magnetic properties of epitaxial oxide heterostructures
Author(s): Ramachandran, S; Prater, JT; Sudhakar, N, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 145 Issue: 1-2 Pages: 1822 Published: 2008
22.
Title: Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based
diluted magnetic semiconductors
Author(s): Chakraborti, D; Trichy, G; Narayan, J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 11 Article Number:
113908 Published: 2007
23.
Title: The effect of oxygen annealing on ZnO : Cu and ZnO :(Cu,Al) diluted magnetic
semiconductors
Author(s): Chakraborti, D; Trichy, GR; Prater, JT, et al.
18
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 40 Issue:
24 Pages: 7606-7613 Published: 2007
24.
Title: High-kappa gate dielectrics with ultra-low leakage current for sub-45 nm CMOS
Author(s): Venkateshan, A; Singh, R; Poole, KF, et al.
Source: ELECTRONICS LETTERS Volume: 43 Pages: 1130-1132 Published: 2007
25.
Title: Nanostructured GaN nucleation layer for light-emitting diodes
Author(s): Narayan, J; Pant, P; Wei, W, et al.
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume:
7 Issue: 8 Pages: 2719-2725 Published: AUG 2007
26.
Title: Growth, characterization, and magnetic properties of FePt nanodots on Si (100)
Author(s): Trichy, GR; Chakraborti, D; Narayan, J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 3 Article Number:
033901 Published: AUG 1 2007
27.
Title: Gallium-doped zinc oxide films as transparent electrodes for organic solar cell
applications
Author(s): Bhosle, V; Prater, JT; Yang, F, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 2 Article Number:
023501 Published: JUL 15 2007
28.
Title: Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films
on (0001) sapphire
Author(s): Bhosle, V; Prater, JT; Narayan, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 1 Article Number:
013527 Published: JUL 1 2007
29.
Title: Room temperature ferromagnetism and magnetotransport properties of the layered
manganite system La1.2Ba1.8Mn2-xRuxO7 (0 <= x <= 1-0)
Author(s): Sudhakar, N; Rajeev, KP; Tiwari, A, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 142 Issue: 9 Pages: 519524 Published: JUN 2007
30.
Title: Structural, magnetic, and electron transport studies on nanocrystalline layered
manganite La1.2Ba1.8Mn2O7 system
Author(s): Sudhakar, N; Ningthoujam, RS; Rajeev, KP; Gajbhiye, NS; Narayan, J
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume:
7 Issue: 3 Pages: 965-969 Published: 2007
31.
Title: Magnetic properties of Ni-doped MgO diluted magnetic insulators
Author(s): Ramachandran, S; Narayan, J; Prater, JT
Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 13 Article Number:
132511 Published: MAR 26 2007
32.
Title: Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001)
sapphire
Author(s): Bhosle, V; Narayan, J
Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 10 Article Number:
101903 Published: MAR 5 2007
33.
Title: Magnetic, electrical, and microstructural characterization of ZnO thin films codoped
with Co and Cu
19
Author(s): Chakraborti, D; Ramachandran, S; Trichy, G, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 101 Issue: 5 Article Number:
053918 Published: MAR 1 2007
34.
Title: Room temperature ferromagnetism in Zn1-xCuxO thin films
Author(s): Chakraborti, D; Narayan, J; Prater, JT
Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 6 Article Number:
062504 Published: FEB 5 2007
35.
Title: Photoluminescence study of ZnO films codoped with nitrogen and tellurium
Author(s): Porter, HL; Muth, JF; Narayan, J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 12 Article Number:
123102 Published: DEC 15 2006
36.
Title: Transmission electron microscopy observations on the microstructure of naturally
aged Al-Mg-Si alloy AA6022 processed with an electric field
Author(s): Conrad, H; Ramachandran, S; Jung, K; Narayan, J
Source: JOURNAL OF MATERIALS SCIENCE Volume: 41 Issue: 22 Pages: 75557561 Published: NOV 2006
37.
Title: Phase transition and critical issues in structure-property correlations of vanadium
oxide
Author(s): Narayan, J; Bhosle, VM
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 10 Article Number:
103524 Published: NOV 15 2006
38.
Title: Regular and high resolution transmission electron microscopy observations on the
precipitates in a naturally aged Al-Mg-Si alloy AA6022
Author(s): Ramachandran, S; Jung, K; Narayan, J, et al.
Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL
MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING Volume:
435 Pages: 693-697 Published: NOV 5 2006
39.
Title: Microstructure and electrical property correlations in Ga : ZnO transparent
conducting thin films
Author(s): Bhosle, V; Narayan, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 9 Article Number:
093519 Published: NOV 1 2006
40.
Title: Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001)
surface
Author(s): Zhou, H; Narayan, J
Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 8 Issue: 5 Pages:
595-600 Published: OCT 2006
41.
Title: Methods for processing tantalum films of controlled microstructures and properties
Author(s): Narayan, J; Bhosle, V; Tiwari, A, et al.
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 24 Issue:
5 Pages: 1948-1954 Published: SEP-OCT 2006
42.
Title: L1(0) ordered epitaxial FePt (001) thin films on TiN/Si (100) by pulsed laser
deposition
Author(s): Trichy, GR; Narayan, J; Zhou, H
Source: APPLIED PHYSICS LETTERS Volume: 89 Issue: 13 Article Number:
20
132502 Published: SEP 25 2006
43.
Title: Electrical properties of transparent and conducting Ga doped ZnO
Author(s): Bhosle, V; Tiwari, A; Narayan, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number:
033713 Published: AUG 1 2006
44.
Title: Critical size for defects in nanostructured materials
Author(s): Narayan, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number:
034309 Published: AUG 1 2006
45.
Title: Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors
Author(s): Ramachandran, S; Narayan, J; Prater, JT
Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 24 Article Number:
242503 Published: JUN 12 2006
46.
Title: Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire
(0001)
Author(s): Chugh, A; Ramachandran, S; Tiwari, A, et al.
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages:
840-845 Published: 2006
47.
Title: Co-doped ZnO dilute magnetic semiconductor
Author(s): Prater, JT; Ramachandran, S; Tiwari, A; Narayan, J
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages:
852-856 Published: 2006
48.
Title: Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3
(0001)
Author(s): Ramachandran, S; Chugh, A; Tiwari, A, et al.
Source: JOURNAL OF CRYSTAL GROWTH Volume: 291 Issue: 1 Pages: 212217 Published: MAY 15 2006
49.
Title: Hyperbaric laser chemical vapor deposition of carbon fibers from the 1-alkenes, 1alkynes, and benzene
Author(s): Maxwell, JL; Boman, M; Springer, RW, et al.
Source: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY Volume: 128 Issue:
13 Pages: 4405-4413 Published: APR 5 2006
50.
Title: Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a
high Curie temperature
Author(s): Tiwari, A; Bhosle, VM; Ramachandran, S, et al.
Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 14 Article Number:
142511 Published: APR 3 2006
51.
Title: Growth and observation of low-field giant magnetoresistance in
La0.7Sr0.3MnO3/ZnO superlattice structures
Author(s): Tiwari, A; Narayan, J
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume:
6 Issue: 3 Pages: 612-617 Published: MAR 2006
52.
Title: Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures
Author(s): Narayan, J; Pant, P; Chugh, A, et al.
21
Source: JOURNAL OF APPLIED PHYSICS Volume: 99 Issue: 5 Article Number:
054313 Published: MAR 1 2006
53.
Title: Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO
Author(s): Bhosle, V; Tiwari, A; Narayan, J
Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 3 Article Number:
032106 Published: JAN 16 2006
54.
Title: Grain size softening in nanocrystalline TiN
Author(s): Conrad, H; Narayan, J; Jung, K
Source: INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD
MATERIALS Volume: 23 Issue: 4-6 Pages: 301-305 Published: 2005
55.
Title: Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin
films
Author(s): Ramachandran, S; Tiwari, A; Narayan, J, et al.
Source: APPLIED PHYSICS LETTERS Volume: 87 Issue: 17 Article Number:
172502 Published: OCT 24 2005
56.
Title: Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium
Author(s): Porter, HL; Cai, AL; Muth, JF, et al.
Source: APPLIED PHYSICS LETTERS Volume: 86 Article Number:
211918 Published: 2005
57.
Title: Epitaxial growth and properties of MoOx(2 < x < 2.75) films
Author(s): Bhosle, V; Tiwari, A; Narayan, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 8 Article Number:
083539 Published: APR 15 2005
58.
Title: Epitaxial growth of zinc oxide thin films on silicon
Author(s): Jin, CM; Narayan, R; Tiwari, A, et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS
FOR ADVANCED TECHNOLOGY Volume: 117 Issue: 3 Pages: 348354 Published: MAR 25 2005
59.
Title: Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to
Anderson localized insulator (vol 96, pg 3827, 2004)
Author(s): Tiwari, A; Jin, C; Narayan, J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 5 Article Number:
059902 Published: MAR 1 2005
60.
Title: Effect of UV/VUV enhanced RTP on process variation and device performance of
metal gate high-kappa gate stacks for the sub-90-nm CMOS regime
Author(s): Damjanovic, D; Bolla, HK; Singh, R, et al.
Source: IEEE TRANSACTIONS ON SEMICONDUCTOR
MANUFACTURING Volume: 18 Issue: 1 Pages: 55-62 Published: FEB 2005
61.
Title: New frontiers in thin film growth and nanomaterials
Author(s): Narayan, J
Source: METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS
METALLURGY AND MATERIALS PROCESSING SCIENCE Volume: 36 Issue:
1 Pages: 5-22 Published: 2005
62.
Title: New frontiers in thin film growth and nanomaterials
22
Author(s): Narayan, J
Source: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL
METALLURGY AND MATERIALS SCIENCE Volume: 36A Issue: 2 Pages: 277294 Published: FEB 2005
63.
Title: Pulsed laser deposition assisted novel synthesis of self-assembled magnetic
nanoparticles
Author(s): Kumar, D; Yarmolenko, S; Sarkar, J, et al.
Source: COMPOSITES PART B-ENGINEERING Volume: 35 Issue: 2 Pages: 149155 Published: 2004
64.
Title: The effect of interfacial layers on high-performance gate dielectrics processed by
RTP-ALD
Author(s): Fakhruddin, M; Singh, R; Poole, KF, Narayan, J.
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 151 Issue:
8 Pages: G507-G511 Published: 2004
65.
Title: Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3(001)
Author(s): Tiwari, A; Narayan, J; Sudhakar, N, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 132 Issue: 12 Pages: 863866 Published: DEC 2004
66.
Title: Origin of room-temperature ferromagnetism in cobalt-doped ZnO
Author(s): Ramachandran, S; Tiwari, A; Narayan, J
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 11 Pages:
1298-1302 Published: 2004
67.
Title: Electrical transport in ZnO1-delta films: Transition from band-gap insulator to
Anderson localized insulator
Author(s): Tiwari, A; Jin, C; Narayan, J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 96 Issue: 7 Pages: 38273830 Published: OCT 1 2004
68.
Title: Novel methods of forming self-assembled nanostructured materials: Ni nanodots in
Al2O3 and TiN matrices
Author(s): Narayan, J; Tiwari, A
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume:
4 Issue: 7 Pages: 726-732 Published: SEP 2004
69.
Title: Epitaxial GaN on Si(111): Process control of SiNx interlayer formation
Author(s): Rawdanowicz, TA; Narayan, J
Source: APPLIED PHYSICS LETTERS Volume: 85 Issue: 1 Pages: 133135 Published: JUL 5 2004
70.
Title: Zn0.9Co0.1O-based diluted magnetic semiconducting thin films
Author(s): Ramachandran, S; Tiwari, A; Narayan, J
Source: APPLIED PHYSICS LETTERS Volume: 84 Issue: 25 Pages: 52555257 Published: JUN 21 2004
71.
Title: TaN-TiN binary alloys and superlattices as diffusion barriers for copper
interconnections (vol 33, pg 1, 2004)
Author(s): Wang, H; Gupta, A; Tiwari, A, et al.
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 1 Pages: L5L5 Published: JAN 2004
23
72.
Title: Role of self-assembled gold nanodots in improving the electrical and optical
characteristics of zinc oxide films
Author(s): Tiwari, A; Chugh, A; Jin, C, et al.
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume:
3 Issue: 5 Pages: 368-371 Published: OCT 2003
73.
Title: TaN-TiN binary alloys and superlattices as diffusion barriers for copper
interconnects
Author(s): Wang, H; Gupta, A; Tiwari, A, et al.
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 32 Issue: 10 Pages:
994-999 Published: 2003
74.
Title: Formation of self-assembled epitaxial nickel nanostructures
Author(s): Zhou, H; Kumar, D; Kvit, A, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 94 Issue: 8 Pages: 48414846 Published: OCT 15 2003
75.
Title: Growth and characteristics of TaN/TiN superlattice structures
Author(s): Wang, H; Zhang, X; Gupta, A, et al.
Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 15 Pages: 30723074 Published: OCT 13 2003
76.
Title: Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder
consolidation by room temperature milling: optimizing mechanical properties
Author(s): Zhu, XK; Zhang, X; Wang, H, et al.
Source: SCRIPTA MATERIALIA Volume: 49 Issue: 5 Pages: 429-433 Published:
SEP 2003
77.
Title: A novel technique for making self-encapsulated and self-aligned copper films
Author(s): Chugh, A; Tiwari, A; Kvit, A, et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS
FOR ADVANCED TECHNOLOGY Volume: 103 Issue: 1 Pages: 45-48 Published:
SEP 25 2003
78.
Title: Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure
Author(s): Tiwari, A; Jin, C; Kumar, D, et al.
Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 9 Pages: 17731775 Published: SEP 1 2003
79.
Title: Effect of microstructure on diffusion of copper in TiN films
Author(s): Gupta, A; Wang, H; Kvit, A, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 9 Pages: 52105214 Published: MAY 1 2003
80.
Title: Role of silver addition in the synthesis of high critical current density MgB2 bulk
superconductors
Author(s): Kumar, D; Pennycook, SJ; Narayan, J, et al.
Source: SUPERCONDUCTOR SCIENCE & TECHNOLOGY Volume: 16 Issue:
4 Pages: 455-458 Published: APR 2003
81.
Title: Plasma plume characteristics and properties of pulsed laser deposited diamond-like
carbon films
Author(s): Haverkamp, J; Mayo, RM; Bourham, MA, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 6 Pages: 3627-
24
3634 Published: MAR 15 2003
82.
Title: Evolution of microstructure and mechanical properties of in situ consolidated bulk
ultra-fine-grained and nanocrystalline Zn prepared by ball milling
Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.
Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL
MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING Volume:
344 Issue: 1-2 Pages: 175-181 Published: MAR 15 2003
83.
Title: Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films
on buffered silicon substrates using pulsed laser deposition
Author(s): Gilmore, WM; Chattopadhyay, S; Kvit, A, et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 18 Issue: 1 Pages: 111114 Published: JAN 2003
84.
Title: Domain epitaxy: A unified paradigm for thin film growth
Author(s): Narayan, J; Larson, BC
Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 1 Pages: 278285 Published: JAN 1 2003
85.
Title: Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates
Author(s): Narayan, J; Sharma, AK; Kvit, A, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 1 Pages: 913 Published: 2002
86.
Title: Low temperature electrical transport in La1-xNdxNiO3-delta
Author(s): Tiwari, A; Rajeev, KP; Narayan, J
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 357361 Published: 2002
87.
Title: Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1xMnxO films
Author(s): Tiwari, A; Jin, C; Kvit, A, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 371374 Published: 2002
88.
Title: Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)
Author(s): Tiwari, A; Chug, A; Jin, C, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 12 Pages: 679682 Published: 2002
89.
Title: Weak-localization effect in single crystal TaN(001) films
Author(s): Tiwari, A; Wang, H; Kumar, D, et al.
Source: MODERN PHYSICS LETTERS B Volume: 16 Issue: 28-29 Pages: 11431149 Published: DEC 20 2002
90.
Title: Formation of misfit dislocations in thin film heterostructures
Author(s): Narayan, J; Oktyabrsky, S
Source: JOURNAL OF APPLIED PHYSICS Volume: 92 Issue: 12 Pages: 71227127 Published: DEC 15 2002
91.
Title: Mechanisms for grain size hardening and softening in Zn
Author(s): Conrad, H; Narayan, J
Source: ACTA MATERIALIA Volume: 50 Issue: 20 Pages: 5067-5078 Published:
25
DEC 3 2002
92.
Title: Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix
Author(s): Kumar, D; Pennycook, SJ; Lupini, A, et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 22 Pages: 42044206 Published:2002
93.
Title: Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN
Author(s): Narayan, J; Wang, H; Oh, TH, et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 21 Pages: 39783980 Published: NOV 18 2002
94.
Title: Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn
Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 19 Pages: 4823-4830 Published:
NOV 14 2002
95.
Title: Epitaxial growth of ZnO films on si(111)
Author(s): Tiwari, A; Park, M; Jin, C, et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 17 Issue: 10 Pages:
2480-2483 Published: OCT 2002
96.
Title: Z-contrast imaging of dislocation cores at the GaAs/Si interface
Author(s): Lopatin, S; Pennycook, SJ; Narayan, J, et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 15 Pages: 27282730 Published: OCT 7 2002
97.
Title: Modulated oscillatory hardening and dynamic recrystallization in cryomilled
nanocrystalline Zn
Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 16 Pages: 3995-4004 Published:
SEP 20 2002
98.
Title: Mechanism for grain size softening in nanocrystalline Zn
Author(s): Conrad, H; Narayan, J
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 12 Pages: 22412243 Published: SEP 16 2002
99.
Title: Copper diffusion characteristics in single-crystal and polycrystalline TaN
Author(s): Wang, H; Tiwari, A; Zhang, X, et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 8 Pages: 14531455 Published: AUG 19 2002
100.
Title: Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized
disk bend test
Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 13 Pages: 3527-3533 Published:
AUG 1 2002
26
Summary of Narayan’s Research Contributions (with Most Cited Papers Below)
(1) Defects and diffusion in magnesium Oxide ( Most Cited #52 and 59; Narayan & Washburn,
Acta Met 21, 533(1973); Phil Mag 26, 1179(1972))
Narayan Provided first direct evidence for the presence of paired vacancies (Schottky defects) and paired
interstitials (Frenkel defects) and their clusters in magnesium oxide. This research was quite
groundbreaking in the field of ionic solids and ceramics, especially in the context of seminal work on the
presence of vacancies in metals by Simmons and Balluffi. Through his ingenious in-situ TEM
experiments, Narayan studied diffusion mechanisms of Schottky and Frenkel defects and showed
activation energy for diffusion along the dislocations and grain boundaries (pipe diffusion) to be
approximately half of the bulk value. This work has proved to be pivotal to processing of materials,
particularly, ceramics and semiconductors.
(2) Ion-solid interactions (Ion Implantation), solid-phase epitaxy, and formation of novel
supersaturated semiconductor alloys (Most Cited # 9, 12, 14, , 23, 26, 28, 29, see attachment
below)
Narayan’s expertise in defects and diffusion was ideally suited for the next phase of his career at ORNL
on ion implantation, solid phase epitaxy, rapid thermal annealing, and formation of supersaturated
semiconductor alloys. He has made outstanding contributions in each of these areas; he established
atomic structure of displacement cascades and developed an amorphization model for semiconductors
based upon his careful experiments which led to the determination of critical damage energy for
amorphization (12eV/atom for silicon). He performed elegant TEM experiments on solid-phase-epitaxy
kinetics, and discovered the formation of supersaturated semiconductor alloys with solubility limits
exceeding as much as 500 over the equilibrium values. This is a critical step in ion implantation doping
for ultra-shallow p-n junctions in current and future devices. Narayan established amorphization in silicon
to be the first-order phase transformation with a break in entropy, and proposed a well-known
crystallization model to explain orientation dependence of crystallization kinetics and twin defect
nucleation.
(3) Pulsed laser annealing and rapid thermal processing of semiconductors (Most Cited # 3, 11, 14,
27, 29, 34, 39, 46; US Patents: # 4,147,563(1979); 4,181,538(1980); 4,261,764(1981))
Narayan and his coworkers at ORNL discovered pulsed laser annealing to remove ion implantation
damage and related defects in ion implanted silicon, and created “defect-free” supersaturated
semiconductor alloys by nonequilibrium melting and quenching with rates exceeding billions of degrees
per second. He performed seminal experiments on interfacial instability and cell formation under
controlled rapid quenching conditions. Narayan invented laser induced diffusion to form highly efficient
ultra-shallow p-n junctions and low-cost laser-diffused solar cells. This technique is being adopted
currently to form next-generation ultra-dense microelectronic devices with feature size less than 50nm.
Subsequent research in laser (transient thermal) processing resulted in the discovery of flame annealing
and rapid thermal processing, which constitutes the backbone of current device fabrication.
(4) Pulsed laser evaporation and deposition of thin films (Most Cited # 1, 4, 5, 6, , 13, 16, 18, 20, 21,,
22, 30; US Patents: # 5,406,123 (1995); 6,734 091 (2004); 6,955, 985 (2005)
Narayan’s critical understanding of laser-solid interactions led to nonequilibrium pulsed laser evaporation
at higher laser energies, and deposition of thin films. His group (along with Bell Core group) published
first seminal paper on pulsed laser deposition (PLD) of thin films of high-Tc superconductors in 1987
(Most Cited # 4). Since then, PLD technique has become one of the most popular techniques for thin film
deposition along with MOCVD and MBE. The PLD is proving to be an elegant nonequilibrium
27
technique, lending itself to higher quality films of multicomponent systems at lower thermal budgets with
fewer processing steps. Singh and Narayan developed a theoretical model based upon laser plume
generation and expansion to lay a firm foundation of PLD, leading to Most Cited #1 and #5.
(5) Domain matching epitaxy: Thin film epitaxy across the misfit scale (Most Cited # 2,7, 8, 15,
20,21, 30, 42) US Patents: # 5,406,123 (1995); 6,734 091 (2004); 6,955, 985 (2005)
Narayan discovered a new paradigm for thin film epitaxy across the misfit scale based upon matching of
integral multiples of lattice planes across the film-substrate interface. Thus, the films with 2% and 25%
misfits involve 49/50 and 3/4 matching, respectively. If the misfit falls in between the integral multiples,
it is accommodated by the principle of domain variation, where two domains alternate with a certain
frequency. The GaN based III-nitrides and ZnO II-oxides with misfit ranging from 13-20% on sapphire
and silicon substrates can be grown by domain matching epitaxy paradigm. Since the critical thickness
under such a large misfit is less than a monolayer, most of the strain is relaxed in less than two
monolayers so that rest of the film can grow relatively strain-free, as demonstrated by in-situ synchrotron
experiments of ZnO growth on sapphire by Narayan and Larson (# 42). Thus, for hard materials with
higher lattice friction and dislocation nucleation energy, better quality film can be grown at larger misfits
with the DME paradigm. The DME paradigm has been used to grow nucleation layer, device layer, and
epitaxial Ohmic contact layer to fabricate next-generation LEDs for solid state lighting.
Kopin and Kobrite (Chinese Subsidiary of Kopin) Corporations have licensed these patents to
manufacture high-efficiency LEDs and lasers on sapphire and silicon substrates.
(6) Nanotechnology for high-efficiency LEDs and lasers: (Applied Phys Lett. 81, 841 (2002); 81,
3978 (2002)); US Patents: # 6,881,983 (2005); 6,847,052 (2005); 7,122,841(2006)
Narayan and Kopin engineers have invented novel “Nano Pocket” LEDs where carriers are quantum
confined by introducing a thickness variation to control the bandgap of GaInN/GaN quantum wells. This
technology has been used to further enhance quantum efficiency of solid-state LEDs to compete
effectively with fluorescent lighting. The thickness variation is introduced during thin film growth as a
result of misfit strain between GaInN and GaN layers. This phenomenon was discovered and modeled by
Narayan to predict processing parameters and optimize the structures for high efficiency.
(7) Defects and interfaces in thin film heterostructures
(a) Ge/Si(100) and Si-Ge/Si(100) thin film heterostructures (Most Cited # 37, 41 66, 96)
Narayan proposed the mechanism of misfit stress relaxation by nucleation of slip dislocation at the steps
on the free surface of the film, above a critical thickness. In the case of Si-Ge/Si(100) heterostructure, he
verified them to be 600 dislocations, via in-situ TEM experiments, which glide to the interface. Another
set of correct 600 dislocations can be nucleated at the surface to form 900 dislocations or incorrect Burgers
vectors of the second set can lead to formation of stacking faults. Narayan and coworkers showed that
critical thickness is increased under tensile stress because of higher dislocation nucleation energy, and it
can be also increased under three-dimensional growth conditions. Narayan calculated core energy and
core radii of dislocations and established orientation dependence of core energy of dislocations, which
forms the basis for obtaining dislocation-free silicon wafers for devices. He published seminal papers on
defect control and reduction in semiconductor heterostructures, leading to three U.S. patents.
28
(b) ZnO and perovskite based thin film epitaxy and devices (Most Cited # 8, , 15, , 17, 22, 33,87)
Narayan and coworkers pioneered epitaxial growth of ZnO films using pulsed laser deposition on
sapphire (0001) and silicon (111) substrates via domain matching epitaxy. By controlling twodimensional growth characteristics of initial layer, misfit dislocations are confined in this layer, and the
rest of the film is grown relatively “defect-free.” He obtained fundamental electrical and optical
properties of ZnO films as a standard for other researchers. Narayan invented a novel method of p-type
doping of ZnO by bombarding with low-energy N2+ ions during thin film growth, where molecular ions
break up into atomic nitrogen upon impact and get incorporated into the film. He has created novel ZnO
based thin film heterostructures, where ZnO is doped with magnetic impurities, thus utilizing the charge
as well as the spin of an electron for novel spintronic devices. He also invented ZnMgO alloys (of
wurtzite and zince blende structure) for increasing the bandgap and ZnCdO alloys for decreasing the
bandgap to cover the entire visible spectrum. The cubic ZnMgO alloys can be directly grown on Si(100)
via DME for integration with silicon based microelectronics, and creation of novel smart sensor
structures. These ZnO based materials have been also grown on perovskite based LSMO (p-type)
materials for novel LEDs and sensors. Kopin Corporation has licensed Narayan’s US patents ( #
6,423,983(2002) and 6,518,077 (2003)) to manufacture next-generation high-efficiency ZnO based LEDs
and sensors.
(c) High-Tc based thin film heterostructures (Most Cited # 4, 5, 6, , 44, , 65, 67, 88, 90, 92, 93,99)
Narayan and his coworkers have pioneered pulsed laser deposition of high-Tc based thin film
heterostructures. He discovered 1-2-4 (Y1Ba2Cu4O8) superconductors Tc> 80-100K (U.S. patent #
5,063,202) and composites 1-2-4 and 1-2-3 (Y1Ba2Cu4O7-) with enhanced flux-pinning characteristics. In
addition, the 1-2-4 phase is much more stable than 1-2-3 under oxygen ambient.
(d) Diamond and diamondlike materials (Most Cited # 13, 16, 27, 35, 36, 37, , 49, 64, 71, 75)
Narayan is very well known for epitaxial growth of diamond thin films on Si(100) and Cu
(100)substrates. He invented (US Patent # 5,221,411(1993)) a laser method for synthesis and processing
of continuous diamond thin films on nondiamond substrates such as Cu(100). He used PLD to create
hydrogen-free diamondlike carbon films and invented a new laser ablation and plasma hybrid technique
to further enhance the Sp3 fraction in diamondlike films.
(8) Novel materials: nanostructured materials (Most Cited # 24, 32, 44, 68, 69, 81, 82, 94)
Narayan invented metal-ceramic composites having unique and improved mechanical and optical
properties. The first groundbreaking paper on Ni-MgO nanocomposites appeared in 1981 (Phys Rev Lett
46, 1491). The metallic precipitates in the ceramics act as dislocation sources and modify photon-solid
interactions (U.S. patent # 4,376,755 + IR-100 Award) for solar selective absorbers, cathodochromic,
photochromic and data storage applications. More recently, his work has focused on metal, WC and TiN
nanocomposites with theoretical modeling to explain grain size dependence on mechanical properties.
Using DME and 3-D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D selfassembled nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF
hailed as one of the breakthroughs of the year (2004).
29
(9) High-resolution electron microscopy and other techniques and structure-property correlations (
Most Cited # 10, 12, 36, 37, 41, 50)
Narayan developed atomic-resolution electron microscopy techniques to study the atomic structure of
defects (dislocations) and interfaces, which are based upon a three-step interactive procedure: calculation
simulation and comparison with experimental results. Narayan and his coworkers at ORNL also
developed direct imaging of dopants distribution and lattice location by scanning transmission electron
microscopy. These STEM and STEM-Z based techniques with Angstrom resolution are critical for atomic
structure, chemistry and property correlations, particularly in nanostructured materials and
nanocomposites.
50 Most Cited Papers of Professor Narayan from the Web of Science
Title: III-nitrides: Growth, characterization, and properties
1. Author(s): Jain, SC; Willander, M; Narayan, J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 87 Issue: 3 Pages: 9651006 Published: 2000
Times Cited: 544
Title: PULSED-LASER EVAPORATION TECHNIQUE FOR DEPOSITION OF THIN-FILMS
2. - PHYSICS AND THEORETICAL-MODEL
Author(s): SINGH, RK; NARAYAN, J
Source: PHYSICAL REVIEW B Volume: 41 Issue: 13 Pages: 8843-8859 Part:
A Published: MAY 1 1990
Times Cited: 512
Title: Optical and structural properties of epitaxial MgxZn1-xO alloys
3. Author(s): Sharma, AK; Narayan, J; Muth, JF, et al.
Source: APPLIED PHYSICS LETTERS Volume: 75 Issue: 21 Pages: 33273329 Published: NOV 22 1999
Times Cited: 186
Title: LASER ANNEALING OF BORON-IMPLANTED SILICON
4. Author(s): YOUNG, RT; WHITE, CW; CLARK, GJ, et al.
Source: APPLIED PHYSICS LETTERS Volume: 32 Issue: 3 Pages: 139-141 Published:
1978
Times Cited: 173
Title: THEORETICAL-MODEL FOR DEPOSITION OF SUPERCONDUCTING THIN-FILMS
5. USING PULSED LASER EVAPORATION TECHNIQUE
Author(s): SINGH, RK; HOLLAND, OW; NARAYAN, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 68 Issue: 1 Pages: 233247 Published: JUL 1 1990
Times Cited: 156
Title: FORMATION OF THIN SUPERCONDUCTING FILMS BY THE LASER
6. PROCESSING METHOD
30
Author(s): NARAYAN, J; BIUNNO, N; SINGH, R, et al.
Source: APPLIED PHYSICS LETTERS Volume: 51 Issue: 22 Pages: 18451847 Published: NOV 30 1987
Times Cited: 153
Title: EPITAXIAL-GROWTH OF TIN FILMS ON (100) SILICON SUBSTRATES BY LASER
7. PHYSICAL VAPOR-DEPOSITION
Author(s): NARAYAN, J; TIWARI, P; CHEN, X, et al.
Source: APPLIED PHYSICS LETTERS Volume: 61 Issue: 11 Pages: 12901292 Published: SEP 14 1992
Times Cited: 138
Title: INSITU PROCESSING OF EPITAXIAL Y-BA-CU-O HIGH-TC SUPERCONDUCTING
8. FILMS ON (100) SRTIO3 AND (100) YS-ZRO2 SUBSTRATES AT 500-650-DEGREES-C
Author(s): SINGH, RK; NARAYAN, J; SINGH, AK, et al.
Source: APPLIED PHYSICS LETTERS Volume: 54 Issue: 22 Pages: 22712273 Published: MAY 29 1989
Times Cited: 130
Title: Defects and interfaces in epitaxial ZnO/alpha-Al2O3 and AlN/ZnO/alpha-Al2O3,
9. heterostructures
Author(s): Narayan, J; Dovidenko, K; Sharma, AK, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 84 Issue: 5 Pages: 25972601 Published: SEP 1 1998
Times Cited: 127
Title: Structural, optical and magnetic properties of diluted magnetic semiconducting Zn110. xMnxO films
Author(s): Tiwari, A; Jin, C; Kvit, A, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 371374 Published: 2002
Times Cited: 125
Title: Excitonic structure and absorption coefficient measurements of ZnO single crystal
11. epitaxial films deposited by pulsed laser deposition
Author(s): Muth, JF; Kolbas, RM; Sharma, AK, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 85 Issue: 11 Pages: 78847887 Published: JUN 1 1999
Times Cited: 123
Title: Zn0.9Co0.1O-based diluted magnetic semiconducting thin films
12. Author(s): Ramachandran, S; Tiwari, A; Narayan, J
Source: APPLIED PHYSICS LETTERS Volume: 84 Issue: 25 Pages: 52555257 Published: JUN 21 2004
Times Cited: 120
31
Title: On the grain size softening in nanocrystalline materials
13. Author(s): Conrad, H; Narayan, J
Source: SCRIPTA MATERIALIA Volume: 42 Issue: 11 Pages: 1025-1030 Published:
MAY 31 2000
Times Cited: 109
Title: INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN
14. ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL
Author(s): NARAYAN, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 53 Issue: 12 Pages: 86078614 Published: 1982
Times Cited: 106
Title: SPECTROSCOPIC ELLIPSOMETRY - A NEW TOOL FOR NONDESTRUCTIVE
15. DEPTH PROFILING AND CHARACTERIZATION OF INTERFACES
Author(s): MCMARR, PJ; VEDAM, K; NARAYAN, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 59 Issue: 3 Pages: 694701 Published: FEB 1 1986
Times Cited: 103
Title: Refractive indices and absorption coefficients of MgxZn1-xO alloys
16. Author(s): Teng, CW; Muth, JF; Ozgur, U, et al.
Source: APPLIED PHYSICS LETTERS Volume: 76 Issue: 8 Pages: 979-981 Published:
FEB 21 2000
Times Cited: 102
Title: EPITAXIAL-GROWTH OF ALN THIN-FILMS ON SILICON(111) SUBSTRATES BY
17. PULSED-LASER DEPOSITION
Author(s): VISPUTE, RD; NARAYAN, J; WU, H, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 77 Issue: 9 Pages: 47244728 Published: MAY 1 1995
Times Cited: 100
Title: HIGH-QUALITY EPITAXIAL ALUMINUM NITRIDE LAYERS ON SAPPHIRE BY
18. PULSED-LASER DEPOSITION
Author(s): VISPUTE, RD; WU, H; NARAYAN, J
Source: APPLIED PHYSICS LETTERS Volume: 67 Issue: 11 Pages: 15491551 Published: SEP 11 1995
Times Cited: 95
Title: Domain epitaxy: A unified paradigm for thin film growth
19. Author(s): Narayan, J; Larson, BC
Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 1 Pages: 278285 Published: JAN 1 2003
Times Cited: 94
32
Title: P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER20. INDUCED DIFFUSION
Author(s): NARAYAN, J; YOUNG, RT; WOOD, RF, et al.
Source: APPLIED PHYSICS LETTERS Volume: 33 Issue: 4 Pages: 338-340 Published:
1978
Times Cited: 94
Title: ION-ASSISTED LASER PROCESSING OF CN(X) FILMS
21. Author(s): NARAYAN, J; REDDY, J; BIUNNO, N, et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS
FOR ADVANCED TECHNOLOGY Volume: 26 Issue: 1 Pages: 49-53 Published: AUG
1994
Times Cited: 93
Title: NONDESTRUCTIVE DEPTH PROFILING BY SPECTROSCOPIC ELLIPSOMETRY
22. Author(s): VEDAM, K; MCMARR, PJ; NARAYAN, J
Source: APPLIED PHYSICS LETTERS Volume: 47 Issue: 4 Pages: 339-341 Published:
1985
Times Cited: 93
Title: THIN-FILM DEPOSITION BY A NEW LASER ABLATION AND PLASMA HYBRID
23. TECHNIQUE
Author(s): KRISHNASWAMY, J; RENGAN, A; NARAYAN, J, et al.
Source: APPLIED PHYSICS LETTERS Volume: 54 Issue: 24 Pages: 24552457 Published: JUN 12 1989
Times Cited: 90
Title: SUBSURFACE HEATING EFFECTS DURING PULSED LASER EVAPORATION OF
24. MATERIALS
Author(s): SINGH, RK; BHATTACHARYA, D; NARAYAN, J
Source: APPLIED PHYSICS LETTERS Volume: 57 Issue: 19 Pages: 20222024 Published: NOV 5 1990
Times Cited: 86
Title: LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
25. Author(s): WHITE, CW; NARAYAN, J; YOUNG, RT
Source: SCIENCE Volume: 204 Issue: 4392 Pages: 461-468 Published: 1979
Times Cited: 83
Title: ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES
26. Author(s): NARAYAN, J; SRIVATSA, AR; PETERS, M, et al.
Source: APPLIED PHYSICS LETTERS Volume: 53 Issue: 19 Pages: 18231825 Published: NOV 7 1988
Times Cited: 82
33
Title: Aluminum nitride films on different orientations of sapphire and silicon
27. Author(s): Dovidenko, K; Oktyabrsky, S; Narayan, J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 79 Issue: 5 Pages: 24392445 Published: MAR 1 1996
Times Cited: 80
Title: HIGH-TEMPERATURE AND IONIZATION-INDUCED EFFECTS IN LITHIUM28. DOPED MGO SINGLE-CRYSTALS
Author(s): CHEN, Y; TOHVER, HT; NARAYAN, J, et al.
Source: PHYSICAL REVIEW B Volume: 16 Issue: 12 Pages: 5535-5542 Published: 1977
Times Cited: 77
Title: CHARACTERISTICS OF ION-IMPLANTATION DAMAGE AND ANNEALING
29. PHENOMENA IN SEMICONDUCTORS
Author(s): NARAYAN, J; HOLLAND, OW
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 131 Issue:
11 Pages: 2651-2662 Published: 1984
Times Cited: 76
Title: ENHANCEMENT OF NUCLEATION AND ADHESION OF DIAMOND FILMS ON
30. COPPER, STAINLESS-STEEL, AND SILICON SUBSTRATES
Author(s): NARAYAN, J; GODBOLE, VP; MATERA, G, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 71 Issue: 2 Pages: 966971 Published: JAN 15 1992
Times Cited: 75
Title: ELECTRON-MICROSCOPE OBSERVATION OF SHEAR CRACKS IN STAINLESS31. STEEL SINGLE-CRYSTALS
Author(s): OHR, SM; NARAYAN, J
Source: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER
STRUCTURE DEFECTS AND MECHANICAL PROPERTIES Volume: 41 Issue:
1 Pages: 81-89 Published: 1980
Times Cited: 72
Title: SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE
32. ALLOYS IN ION-IMPLANTED SILICON
Author(s): NARAYAN, J; HOLLAND, OW; APPLETON, BR
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 1 Issue:
4 Pages: 871-887 Published: 1983
Times Cited: 71
Title: ATOMIC-STRUCTURE OF ION-IMPLANTATION DAMAGE AND PROCESS OF
33. AMORPHIZATION IN SEMICONDUCTORS
Author(s): NARAYAN, J; FATHY, D; OEN, OS, et al.
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM
SURFACES AND FILMS Volume: 2 Issue: 3 Pages: 1303-1308 Published: 1984
34
Times Cited: 68
Title: LASER METHOD FOR SYNTHESIS AND PROCESSING OF CONTINUOUS
34. DIAMOND FILMS ON NONDIAMOND SUBSTRATES
Author(s): NARAYAN, J; GODBOLE, VP; WHITE, CW
Source: SCIENCE Volume: 252 Issue: 5004 Pages: 416-418 Published: APR 19 1991
Times Cited: 61
Title: Preparation and mechanical properties of composite diamond-like carbon thin films
35. Author(s): Wei, Q; Narayan, RJ; Sharma, AK, et al.
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM
SURFACES AND FILMS Volume: 17 Issue: 6 Pages: 3406-3414 Published: NOV-DEC
1999
Times Cited: 60
Title: DISLOCATIONS, TWINS, AND GRAIN-BOUNDARIES IN CVD DIAMOND THIN36. FILMS - ATOMIC-STRUCTURE AND PROPERTIES
Author(s): NARAYAN, J
Source: JOURNAL OF MATERIALS RESEARCH Volume: 5 Issue: 11 Pages: 24142423 Published: NOV 1990
Times Cited: 60
Title: PULSED LASER MELTING OF AMORPHOUS-SILICON LAYERS
37. Author(s): NARAYAN, J; WHITE, CW
Source: APPLIED PHYSICS LETTERS Volume: 44 Issue: 1 Pages: 35-37 Published:
1984
Times Cited: 60
Title: RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
38. Author(s): NARAYAN, J; HOLLAND, OW
Source: JOURNAL OF APPLIED PHYSICS Volume: 56 Issue: 10 Pages: 29132921 Published: 1984
Times Cited: 60
Title: EPITAXIAL-GROWTH IN LARGE-LATTICE-MISMATCH SYSTEMS
39. Author(s): ZHELEVA, T; JAGANNADHAM, K; NARAYAN, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 75 Issue: 2 Pages: 860871 Published: JAN 15 1994
Times Cited: 59
Title: A NOVEL METHOD FOR SIMULATING LASER-SOLID INTERACTIONS IN
40. SEMICONDUCTORS AND LAYERED STRUCTURES
Author(s): SINGH, RK; NARAYAN, J
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS
FOR ADVANCED TECHNOLOGY Volume: 3 Issue: 3 Pages: 217-230 Published: AUG
35
1989
Times Cited: 56
Title: ATOMIC-STRUCTURE OF DISLOCATIONS IN SILICON, GERMANIUM AND
41. DIAMOND
Author(s): NANDEDKAR, AS; NARAYAN, J
Source: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER
STRUCTURE DEFECTS AND MECHANICAL PROPERTIES Volume: 61 Issue:
6 Pages: 873-891 Published: JUN 1990
Times Cited: 55
Title: COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON42. IMPLANTED SILICON
Author(s): NARAYAN, J; YOUNG, RT; WHITE, CW
Source: JOURNAL OF APPLIED PHYSICS Volume: 49 Issue: 7 Pages: 39123917 Published: 1978
Times Cited: 55
Title: Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates
43. Author(s): Narayan, J; Sharma, AK; Kvit, A, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 1 Pages: 913 Published: 2002
Times Cited: 54
Title: EFFECT OF THE CHEMICAL NATURE OF TRANSITION-METAL SUBSTRATES
44. ON CHEMICAL-VAPOR-DEPOSITION OF DIAMOND
Author(s): CHEN, X; NARAYAN, J
Source: JOURNAL OF APPLIED PHYSICS Volume: 74 Issue: 6 Pages: 41684173 Published: SEP 15 1993
Times Cited: 54
Title: RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED
45. SILICON
Author(s): NARAYAN, J; HOLLAND, OW; EBY, RE, et al.
Source: APPLIED PHYSICS LETTERS Volume: 43 Issue: 10 Pages: 957-959 Published:
1983
Times Cited: 53
Title: CHARACTERIZATION OF DAMAGE IN ION-IMPLANTED GE
46. Author(s): APPLETON, BR; HOLLAND, OW; NARAYAN, J, et al.
Source: APPLIED PHYSICS LETTERS Volume: 41 Issue: 8 Pages: 711-712 Published:
1982
Times Cited: 50
47. Title: ATOMIC-STRUCTURE OF DISLOCATIONS AND DIPOLES IN SILICON
36
Author(s): NANDEDKAR, AS; NARAYAN, J
Source: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER
STRUCTURE DEFECTS AND MECHANICAL PROPERTIES Volume: 56 Issue:
5 Pages: 625-639 Published: NOV 1987
Times Cited: 49
Title: DIAMOND, DIAMOND-LIKE AND TITANIUM NITRIDE BIOCOMPATIBLE
48. COATINGS FOR HUMAN-BODY PARTS
Author(s): NARAYAN, J; FAN, WD; NARAYAN, RJ, et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS
FOR ADVANCED TECHNOLOGY Volume: 25 Issue: 1 Pages: 5-10 Published: JUN
1994
Times Cited: 48
Title: PULSED-LASER MELTING OF AMORPHOUS-SILICON - TIME-RESOLVED
49. MEASUREMENTS AND MODEL-CALCULATIONS
Author(s): LOWNDES, DH; WOOD, RF; NARAYAN, J
Source: PHYSICAL REVIEW LETTERS Volume: 52 Issue: 7 Pages: 561564 Published: 1984
Times Cited: 48
37
38
Recent Papers in Acta Materialia and Scripta Materialia
1. On the grain size softening in nanocrystalline materials (Citation classic)
Author(s): Conrad H, Narayan J
Source: SCRIPTA MATERIALIA Volume: 42 Issue: 11 Pages: 1025-1030 Published: MAY 31 2000
2. Preparation of bulk ultrafine-grained and nanostructured Zn, Al and their alloys by in situ
consolidation of powders during mechanical attrition
Author(s): Zhang X, Wang H, Kassem M, et al.
Source: SCRIPTA MATERIALIA Volume: 46 Issue: 9 Pages: 661-665 Published: MAY 10 2002
3. Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by
room temperature milling: optimizing mechanical properties
Author(s): Zhu XK, Zhang X, Wang H, et al.
Source: SCRIPTA MATERIALIA Volume: 49 Issue: 5 Pages: 429-433 Published: SEP 2003
4. Thin film epitaxy and structure property correlations for non-polar ZnO films
Author(s): Pant P, Budai JD, Aggarwal R, et al.
Source: ACTA MATERIALIA Volume: 57 Issue: 15 Pages: 4426-4431 Published: SEP 2009
5. Formation of single and multiple deformation twins in nanocrystalline fcc metals
Author(s): Zhu YT, Narayan J, Hirth JP, et al.
Source: ACTA MATERIALIA Volume: 57 Issue: 13 Pages: 3763-3770 Published: AUG 2009
6. Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers
grown by pulsed laser deposition
Author(s): Aggarwal R, Nori S, Jin CM, et al.
Source: ACTA MATERIALIA Volume: 57 Issue: 6 Pages: 2040-2046 Published: APR 2009
7. Mechanisms for grain size hardening and softening in Zn
Author(s): Conrad H, Narayan J
Source: ACTA MATERIALIA Volume: 50 Issue: 20 Pages: 5067-5078 Published: DEC 3 2002
8. Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn
Author(s): Zhang X, Wang H, Scattergood RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 19 Pages: 4823-4830 Published: NOV 14 2002
9. Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn
Author(s): Zhang X, Wang H, Scattergood RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 16 Pages: 3995-4004 Published: SEP 20 2002
10. Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test
Author(s): Zhang X, Wang H, Scattergood RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 13 Pages: 3527-3533 Published: AUG 1 2002
11. Evidence for the formation mechanism of nanoscale microstructures in cryomilled Zn powder
Author(s): Zhang X, Wang H, Narayan J, et al.
Source: ACTA MATERIALIA Volume: 49 Issue: 8 Pages: 1319-1326 Published: MAY 8 2001
12. Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation
Author(s): P. Pant, J. Budai, and J. Narayan
Acta Materialia Volume 58 (2009).
39
Nanomaterials Breakthrough announced by NSF: Google: jagdish Narayan
not so spotty material
http://www.nsf.gov/news/news_summ.jsp?cntn_id=100427
www.physorg.com/pdf1020.pdf
http://www.physorg.com/news175252581.html
http://www.innovations-report.com/html/reports/process_engineering/report33003.html
http://www.phschool.com/science/science_news/articles/falling_into_place.html
http://radio.weblogs.com/0105910/2004/09/06.html
http://www.primidi.com/Self-assembling_3D_Nanostructures
http://pda.physorg.com/materials-jagdish-researchers_news1020.html
Google: jagdish Narayan mgo-ni
http://news.ncsu.edu/releases/degraffnarayan09/
http://ceramics.org/ceramictechtoday/tag/jagdish-jay-narayan/
http://asmcommunity.asminternational.org/portal/site/www/NewsItem/?vgnextoid
=d1325e47a5c74210VgnVCM100000621e010aRCRD
http://www.nanotech-now.com/news.cgi?story_id=35082
http://www.patentstorm.us/patents/4376755/description.html
http://inderscience.metapress.com/app/home/contribution.asp?referrer=parent&bac
kto=issue,5,11;journal,4,25;linkingpublicationresults,1:110881,1
http://localtechwire.com/business/local_tech_wire/news/blogpost/6337123/
http://www.rdmag.com/News/2009/10/Materials-Material-Developed-That-CouldBoost-Data-Storage/
http://www.gizmag.com/nanomaterial-boosts-data-storage-fuel-efficiency/13176/
http://www.sciencedaily.com/releases/2009/10/091020111614.htm
http://www.scientificcomputing.com/news-HPC-New-Material-Could-Boost-DataStorage-102109.aspx
http://www.storagenewsletter.com/news/flash/nc-state-fingernail-size-chip-tostore-1tb
http://www.scienceblog.com/cms/new-material-could-boost-data-storage-saveenergy-26400.html
http://www.infoniac.com/hi-tech/latest-invention-fingernail-size-chip-with-1tbcapacity.html
40