Record 1 of 495 Title: Tunable DFB lasers integrated with Ti thin film

Record 1 of 495

Title: Tunable DFB lasers integrated with Ti thin film heaters fabricated with a simple procedure

Author(s): Zhang, C (Zhang, Can); Liang, S (Liang, Song); Zhu, HL (Zhu, Hongliang); Wang, W (Wang,

Wei)

Source: OPTICS AND LASER TECHNOLOGY Volume: 54 Pages: 148-150 DOI:

10.1016/j.optlastec.2013.05.024 Published: DEC 30 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Tunable DFB lasers integrated with thin film heaters fabricated with a novel procedure are presented. Ti and Au layers are deposited successively in a single sputter run and act as both p electrodes of the lasers and contact pads of the heaters. Au above the heater strips is selectively removed, leaving Ti alone as the heater material. With the procedure, no separate step for the deposition of heater material is needed, which simplifies the integration of thin film heaters with lasers greatly. A large heater resistance and thus a high tuning efficiency can be obtained at the same time. (C) 2013

Elsevier Ltd. All rights reserved.

Addresses: [Zhang, Can; Liang, Song; Zhu, Hongliang; Wang, Wei] Chinese Acad Sci, Inst Semicond,

Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, C (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat

Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zhangcan537@semi.ac.cn

ISSN: 0030-3992

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Record 2 of 495

Title: Low temperature operating In2-xNixO3 sensors with high response and good selectivity for NO2 gas

Author(s): Chen, Y (Chen, Yu); Zhu, LH (Zhu, Linghui); Feng, CH (Feng, Caihui); Liu, J (Liu, Juan); Li, C

(Li, Chao); Wen, SP (Wen, Shanpeng); Ruan, SP (Ruan, Shengping)

Source: JOURNAL OF ALLOYS AND COMPOUNDS Volume: 581 Pages: 653-658 DOI:

10.1016/j.jallcom.2013.07.168 Published: DEC 25 2013



Abstract: Pure In2O3 and solid state solution In2-xNixO3 nanofibers with different Ni-doping concentration were prepared via electrospinning method. Sensor based on In2-xNixO3 nanofibers with 6

(mol)% Ni-doping concentration exhibited the highest response, good selectivity and low detectable concentration limit down to ppb levels of NO2 at a relatively low temperature of 90 degrees C. These properties make the In2-xNixO3 nanofibers good candidates for NO2 detection. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zhu, Linghui; Feng, Caihui; Ruan, Shengping] State Key Lab Integrated Optoelect,

Changchun 130012, Peoples R China.

[Liu, Juan; Li, Chao; Wen, Shanpeng] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R

China.

[Chen, Yu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Wen, SP (reprint author), Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples

R China.

E-mail Addresses: sp_wen@jlu.edu.cn; ruansp@jlu.edu.cn

ISSN: 0925-8388

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Record 3 of 495

Title: TiO2 ultraviolet detector based on LaAlO3 substrate with low dark current

Author(s): Lv, KB (Lv, Kaibo); Zhang, M (Zhang, Min); Liu, CX (Liu, Caixia); Liu, GH (Liu, Guohua); Li, HC

(Li, Huachen); Wen, SP (Wen, Shanpeng); Chen, Y (Chen, Yu); Ruan, SP (Ruan, Shengping)


10.1016/j.jallcom.2013.07.161 Published: DEC 15 2013



Abstract: In this letter, metal-semiconductor-metal (MSM) ultraviolet TiO2 photodetectors based on

LaAlO3 substrate were fabricated. TiO2 nano-film was prepared via a sol-gel method, and then was spin-coated on single crystal LaAlO3 substrate. Pt interdigitated electrodes were deposited on the top of

TiO2 film. At 5 V bias, the dark current of the detector was only 50 pA, which is much lower than

TiO2-based detector. When irradiated by 270 nm UV light, a high photoresponse of the device was obtained. The ratio of photocurrent to dark current was nearly 5 orders, which is much higher than other photodetectors based on TiO2 reported. The rise and fall time of the detector were 550 ms and 380 ms, respectively. The very low dark current and high sensitivity demonstrate the excellent application of the device in UV photo-electric detection. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Lv, Kaibo; Liu, Caixia; Liu, Guohua; Ruan, Shengping] Jilin Univ, State Key Lab Integrated

Optoelect, Changchun 130012, Peoples R China.

[Zhang, Min; Li, Huachen; Wen, Shanpeng] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012,

Peoples R China.


Reprint Address: Wen, SP (reprint author), Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples

R China.

E-mail Addresses: sp_wen@jlu.edu.cn; chenyu@semi.ac.cn; rsp1226@gmail.com

ISSN: 0925-8388

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Record 4 of 495

Title: Self-assembly epitaxial growth of nanorods on nanowalls in hierarchical ZnO hexagonal nanocastle

Author(s): Chen, CL (Chen, Chenlong); Yan, T (Yan, Tao); Chou, MMC (Chou, Mitch M. C.); Lee, CY (Lee,

Chun-Yu); Wang, BM (Wang, Bang-Min); Wen, MJ (Wen, Meng-Jie); Zhang, XW (Zhang, Xingwang)

Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 16 Issue: 1 Article Number: DOI:

10.1007/s11051-013-2142-z Published: DEC 13 2013



Abstract: Three-dimensional (3D) hierarchical porous nanostructure materials with controlled morphology have attracted much attention for their unique properties and wide applications. In the present work, a novel 3D hierarchical ZnO nanostructure was prepared through chemical vapor deposition, which is self-assembled by an array of vertical 1D nanorods on top of 2D nanowalls network in 3D hexagonal nanocastle. As revealed by transmission electron microscopy, the hierarchical nanostructures are composed of single crystal ZnO along the [0001] direction, and the preferred surfaces of nanowalls are .

Based on those experimental results, a growth mechanism which involves a Zn-self-catalytic vapor-liquid-solid and vapor-solid mode is proposed to explain the formation of nanorods on nanowalls in

3D nanocastle. Raman and photoluminescence spectrum demonstrated that these 3D hierarchical ZnO nanostructures are nearly free of strain and exhibit an intense ultraviolet emission at 377.6 nm with negligible defect-related green bands.

Addresses: [Chen, Chenlong; Yan, Tao; Chou, Mitch M. C.; Lee, Chun-Yu; Wang, Bang-Min; Wen,

Meng-Jie] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, NSC Taiwan Consortium Emergent

Crystalline Mat, Kaohsiung 80424, Taiwan.

[Zhang, Xingwang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Chou, MMC (reprint author), Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, NSC

Taiwan Consortium Emergent Crystalline Mat, Kaohsiung 80424, Taiwan.

E-mail Addresses: clchen@semi.ac.cn; mitch@faculty.nsysu.edu.tw

ISSN: 1388-0764

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Record 5 of 495

Title: Monolithically integrated terahertz quantum cascade array laser

Author(s): Chen, JY (Chen, Jian-Yan); Liu, JQ (Liu, Junqi); Wang, T (Wang, Tao); Liu, FQ (Liu, Fengqi);

Wang, ZG (Wang, Zhanguo)

Source: ELECTRONICS LETTERS Volume: 49 Issue: 25 Pages: 1632-1633 DOI:

10.1049/el.2013.3456 Published: DEC 5 2013



Abstract: By integrating triple terahertz quantum cascade lasers (at approximate to 3.25 THz) monolithically into an array, a peak power of 213 mW is obtained at 10 K with a threshold current density

of only 257 A/cm(2). The device shows distinct single-lobe far-field behaviour in the temperature range from 10 to 90 K, with a full-width at half-maximum of 36 degrees. The highest operating temperature of the array laser is identical to that of the single ridge laser, indicating good heat dissipation design in the array. These results are promising for realising high power THz quantum cascade lasers.

Addresses: [Chen, Jian-Yan; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo] Chinese Acad Sci, Inst

Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Chen, JY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,

Beijing 100083, Peoples R China.

E-mail Addresses: jqliu@semi.ac.cn

ISSN: 0013-5194

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Record 6 of 495

Title: An ultrathin terahertz lens with axial long focal depth based on metasurfaces

Author(s): Jiang, XY (Jiang, Xiao-Yan); Ye, JS (Ye, Jia-Sheng); He, JW (He, Jing-Wen); Wang, XK (Wang,

Xin-Ke); Hu, D (Hu, Dan); Feng, SF (Feng, Sheng-Fei); Kan, Q (Kan, Qiang); Zhang, Y (Zhang, Yan)

Source: OPTICS EXPRESS Volume: 21 Issue: 24 Pages: 30030-30038 DOI:

10.1364/OE.21.030030 Published: DEC 2 2013



Abstract: The plasmonic resonance effect on metasurfaces generates an abrupt phase change. We employ this phase modulation mechanism to design the longitudinal field distribution of an ultrathin terahertz (THz) lens for achieving the axial long-focal-depth (LFD) property. Phase distributions of the designed lens are obtained by the Yang-Gu iterative amplitude-phase retrieval algorithm. By depositing a

100 nm gold film on a 500 mu m silicon substrate and etching arrayed V-shaped air holes through the gold film, the designed ultrathin THz lens is fabricated by the micro photolithography technology.

Experimental measurements have demonstrated its LFD property, which basically agree with the theoretical simulations. In addition, the designed THz lens possesses a good LFD property with a bandwidth of 200 GHz. It is expected that the designed ultrathin LFD THz lens should have wide potential applications in broadband THz imaging and THz communication systems. (C) 2013 Optical Society of

America

Addresses: [Jiang, Xiao-Yan; Ye, Jia-Sheng; He, Jing-Wen; Wang, Xin-Ke; Hu, Dan; Feng, Sheng-Fei;

Zhang, Yan] Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R China.

[Jiang, Xiao-Yan; Ye, Jia-Sheng; He, Jing-Wen; Wang, Xin-Ke; Hu, Dan; Feng, Sheng-Fei; Zhang, Yan]

Minist Educ, Beijing Key Lab THz Spect & Imaging, Key Lab THz Optoelect, Beijing 100048, Peoples R

China.

[Ye, Jia-Sheng; Wang, Xin-Ke; Feng, Sheng-Fei; Zhang, Yan] Harbin Inst Technol, Beijing Ctr Math &

Informat Interdisciplinary Sci, Harbin 150001, Peoples R China.

[He, Jing-Wen; Hu, Dan; Zhang, Yan] Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China.

[Kan, Qiang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Ye, JS (reprint author), Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R

China.

E-mail Addresses: jiashengye@gmail.com; yzhang@mail.cnu.edu.cn

ISSN: 1094-4087

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Record 7 of 495

Title: Improved picoliter-sized micro-reactors for high-throughput biological analysis

Author(s): Han, WJ (Han WeiJing); Yuan, LN (Yuan LiNa); Wei, QQ (Wei QingQuan); Li, YT (Li YunTao);

Ren, LF (Ren LuFeng); Zhou, XG (Zhou XiaoGuang); Yu, J (Yu Jun); Yu, YD (Yu YuDe)

Source: SCIENCE CHINA-LIFE SCIENCES Volume: 56 Issue: 12 Pages: 1134-1141 DOI:

10.1007/s11427-013-4564-3 Published: DEC 2013



Abstract: High-throughput pyrosequencing, carried out in millions of picoliter-sized reactors on a fiber-optic slide, is known for its longer read length. However, both optical crosstalk (which reduces the signal-to-noise ratio of CCD images) and chemical retention adversely affect the accuracy of

chemiluminescence determination, and ultimately decrease the read length and the accuracy of pyrosequencing results. In this study, both titanium and oxidized aluminum films were deposited on the side walls and upper faces of micro-reactor slides to enhance optical isolation; the films reduced the inter-well crosstalk by one order of magnitude. Subsequently, chemical retention was shown to be caused by the lower diffusion coefficient of the side walls of the picoliter-sized reactors because of surface roughness and random pores. Optically isolated fiber-optic slides over-coated with silicon oxide showed smoother surface morphology, resulting in little chemical retention; this was further confirmed with theoretical calculations. Picoliter-sized micro-reactors coated with titanium-silicon oxide films showed the least inter-well optical crosstalk and chemical retention; these properties are expected to greatly improve the high-throughput pyrosequencing performance.

Addresses: [Han WeiJing; Wei QingQuan; Li YunTao; Zhou XiaoGuang; Yu YuDe] Chinese Acad Sci, Inst

Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Yuan LiNa; Ren LuFeng; Yu Jun] Chinese Acad Sci, Beijing Inst Genom, DNA Sequencing Technol R&D

Ctr, Beijing 100101, Peoples R China.

[Han WeiJing; Yuan LiNa; Wei QingQuan; Li YunTao; Ren LuFeng; Zhou XiaoGuang; Yu Jun; Yu YuDe]

Chinese Acad Sci, Inst Semicond, Joint Lab Bioinformat Acquisit & Sensing Technol, Beijing Inst Genom,


Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated

Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: junyu@big.ac.cn; yudeyu@semi.ac.cn

ISSN: 1674-7305

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Record 8 of 495

Title: Performance Enhancement of Thin-Film Amorphous Silicon Solar Cells with Low Cost Nanodent

Plasmonic Substrates (vol 6, pg 2965, 2013)

Author(s): Huang, HT (Huang, Hongtao); Lu, LF (Lu, Linfeng); Wang, J (Wang, Jun); Yang, J (Yang, Jie);

Leung, SF (Leung, Siu-Fung); Wang, YQ (Wang, Yongqian); Chen, D (Chen, Di); Chen, XY (Chen,

Xiaoyuan); Shen, GZ (Shen, Guozhen); Li, DD (Li, Dongdong); Fan, ZY (Fan, Zhiyong)

Source: ENERGY & ENVIRONMENTAL SCIENCE Volume: 6 Issue: 12 Pages: 3790-3790

Published: DEC 2013



Addresses: [Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &

Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Shen, GZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab

Superlattices & Microstruct, Beijing 100083, Peoples R China.

ISSN: 1754-5692

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Record 9 of 495

Title: Design and Optimization of 2D Laser Source Module for Compact Projector

Author(s): Kong, QS (Kong, Qingshan); Tong, YW (Tong, Youwan); Dong, H (Dong, Hui); Fang, Q (Fang,

Qing); Zhou, Y (Zhou, Yan); Liu, YL (Liu, Yuliang)

Source: JOURNAL OF DISPLAY TECHNOLOGY Volume: 9 Issue: 12 Pages: 995-1000 DOI:

10.1109/JDT.2013.2272856 Published: DEC 2013



Abstract: In order to make projector compact and efficient, we propose that the 2D laser source module is consisted of VCSEL array and micro-lens array. It describes packaging structure design of VCSEL array and thermal resistance calculation. A thermal 3D analysis of 3x3 array based on the finite-element method (FEM) is presented. The analysis shows that the maximum internal temperature of a VCSEL array reaches 51 degrees C. Then, it describes the principle of the micro-lens array. By ZEMAX simulation, in the micro-lens array illumination system, we have got the energy efficiency 67.3%, the light uniformity is 95.5%, respectively, on the micro-display chip at the distance of 65 mm. We have successfully built the complete 3-LCOS projection system based on the 2D source module. It can provide

1362 lm D65 light, and its total volume is 260 x 200 x 160 mm(3) which is more compact than the commercial projector.

Addresses: [Kong, Qingshan; Tong, Youwan; Dong, Hui; Fang, Qing; Zhou, Yan; Liu, Yuliang] Chinese

Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Kong, QS (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,


E-mail Addresses: kongqs@semi.ac.cn

ISSN: 1551-319X

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Record 10 of 495

Title: A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical

Etching

Author(s): Qi, YY (Qi, Yangyang); Wang, Z (Wang, Zhen); Zhang, ML (Zhang, Mingliang); Yang, FH

(Yang, Fuhua); Wang, XD (Wang, Xiaodong)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 47 Pages: 25090-25096

DOI: 10.1021/jp407720e Published: NOV 28 2013



Abstract: Heavily doped silicon nanowires (SiNWs) with controllable doping concentrations can be used in many fields because of their unique characteristics. However, it is difficult to fabricate long heavily doped SiNWs. In this article, a systematic study of metal-assisted chemical etching (MACE) of heavily doped silicon wafers is presented. High-quality SiNWS with lengths up to 40 mu m could be achieved.

The electron-transfer processes among Si, Ag+, Ag nanoparticles, and H2O2 were investigated to explain the formation of SiNWs. A chemical etching processing window, considering HF and H2O2 concentrations, reaction temperature, and etching time, is proposed. To obtain SiNWs, the etching reaction should occur at room temperature for less than 40 min. The appropriate concentration ranges are 0.2-0.4 M for H2O2 and 8-10 M for HF. Transmission electron microscopy (TEM) measurements confirmed that the as-prepared nanowires were single-crystalline. Current-voltage (I-V) measurements of an individual nanowire showed a resistance larger than the calculated value based on bulk silicon. This work can provide guidelines for obtaining high-quality heavily doped SiNWs using the MACE method.

Addresses: [Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Yang, Fuhua; Wang, Xiaodong] Chinese

Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Wang, XD (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond

Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: xdwang@semi.ac.cn

ISSN: 1932-7447

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Record 11 of 495

Title: GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition

Author(s): Xu, K (Xu, Kun); Xu, C (Xu, Chen); Xie, YY (Xie, Yiyang); Deng, J (Deng, Jun); Zhu, YX (Zhu,

Yanxu); Guo, WL (Guo, Weiling); Mao, MM (Mao, Mingming); Xun, M (Xun, Meng); Chen, MX (Chen,

Maoxing); Zheng, L (Zheng, Lei); Sun, J (Sun, Jie)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 22 Article Number: 222105 DOI:

10.1063/1.4836375 Published: NOV 25 2013



Abstract: Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar

GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 degrees C in air.

The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications. (C) 2013 AIP Publishing LLC.

Addresses: [Xu, Kun; Xu, Chen; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen,

Maoxing; Zheng, Lei; Sun, Jie] Beijing Univ Technol, Key Lab Optoelect, Minist Educ, Beijing 100124,

Peoples R China.

[Xie, Yiyang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

[Sun, Jie] Chalmers Tekniska Hogskola AB, S-41296 Gothenburg, Sweden.

Reprint Address: Xu, C (reprint author), Beijing Univ Technol, Key Lab Optoelect, Minist Educ, Beijing

100124, Peoples R China.

E-mail Addresses: xuchen58@bjut.edu.cn; jie.sun@chalmers.se

ISSN: 0003-6951

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Record 12 of 495

Title: Algebraic and geometric mean density of states in topological Anderson insulators

Author(s): Zhang, YY (Zhang, Yan-Yang); Shen, SQ (Shen, Shun-Qing)

Source: PHYSICAL REVIEW B Volume: 88 Issue: 19 Article Number: 195145 DOI:

10.1103/PhysRevB.88.195145 Published: NOV 25 2013



Abstract: Algebraic and geometric mean density of states in disordered systems may reveal properties of electronic localization. In order to understand the topological phases with disorder in two dimensions, we present the calculated density of states for the disordered Bernevig-Hughes-Zhang model. The topological phase is characterized by a perfectly quantized conducting plateau, carried by helical edge states, in a two-terminal setup. In the presence of disorder, the bulk of the topological phase is either a band insulator or an Anderson insulator. Both of them can protect edge states from backscattering. The topological phases are explicitly distinguished as a topological band insulator or a topological Anderson insulator from the ratio of the algebraic mean density of states to the geometric mean density of states.

The calculation reveals that the topological Anderson insulator can be induced by disorders from either a topologically trivial band insulator or a topologically nontrivial band insulator.

Addresses: [Zhang, Yan-Yang; Shen, Shun-Qing] Univ Hong Kong, Dept Phys, Pokfulam, Hong Kong,

Peoples R China.

[Zhang, Yan-Yang] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

Reprint Address: Zhang, YY (reprint author), Univ Hong Kong, Dept Phys, Pokfulam, Hong Kong,

Peoples R China.

ISSN: 1098-0121

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Record 13 of 495

Title: Atomic Layer Deposition of BiFeO3 Thin Films Using beta-Diketonates and H2O

Author(s): Zhang, F (Zhang, Feng); Sun, GS (Sun, Guosheng); Zhao, WS (Zhao, Wanshun); Wang, L

(Wang, Lei); Zeng, L (Zeng, Liu); Liu, SB (Liu, Shengbei); Liu, B (Liu, Bin); Dong, L (Dong, Lin); Liu, XF

(Liu, Xingfang); Yan, GG (Yan, Guoguo); Tian, LX (Tian, Lixin); Zeng, YP (Zeng, Yiping)


DOI: 10.1021/jp4080652 Published: NOV 21 2013



Abstract: Bismuth ferrite (BiFeO3) thin films were grown by atomic layer deposition (ALD) by combining

ALD of Bi2O3 and Fe2O3 and monitored by in-situ quartz crystal microbalance (QCM). The physical and chemical mechanisms of ALD of BiFeO3 were studied according to the results of in-situ QCM and indicate that the deposition of Bi-O and Fe-O were self-limited by molecular sizes of precursors and chemical absorption between precursors and hydroxyl groups. Pure Bi3+ and Fe3+ with atomic ratio of

1:1 were formed during the ALD, and no evaporation of Bi atoms was found at 250 degrees C by X-ray photoelectron spectroscopy (XPS). Pure rhombohedral phase was formed in BiFeO3 films after annealing at 650 degrees C by using X-ray diffraction (XRD). Polarization property of the ALD BFO film was observed and studied by using piezoresponse force microscopy (PFM). The ALD growth of BFO films demonstrates that ALD is an advanced deposition technique for BFO film preparation and memory device application.

Addresses: [Zhang, Feng; Sun, Guosheng; Zhao, Wanshun; Wang, Lei; Zeng, Liu; Liu, Shengbei; Liu,

Bin; Dong, Lin; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Chinese Acad Sci, Inst Semicond,


Reprint Address: Zhang, F (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: fzhang@semi.ac.cn

ISSN: 1932-7447

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Record 14 of 495

Title: Absorption enhancement using nanoneedle array for solar cell

Author(s): Zhang, X (Zhang, Xu); Sun, XH (Sun, Xiao-Hong); Jiang, LD (Jiang, Liu-Di)


10.1063/1.4832216 Published: NOV 18 2013



Abstract: A theoretical analysis of light trapping properties of Gallium arsenide (GaAs) nanoneedle arrays

(NNAs) solar cells is presented. The effect of geometric parameters on the optical absorption of NNAs has been analyzed by using rigorous coupled wave analysis algorithm and finite element method.

Compared with nanowire arrays and thin-film layer counterpart, higher light absorption efficiency can be achieved in GaAs NNAs, due to the graded refractive index of NNAs that incident light can be coupled into the NNAs efficiently. The absorption profiles at different wavelength and angle-dependant optical properties of NNAs are also evaluated. Meanwhile, the short-circuit current of GaAs NNAs for various lengths at fixed filling factor is obtained. (C) 2013 AIP Publishing LLC.

Addresses: [Zhang, Xu; Sun, Xiao-Hong] Zhengzhou Univ, Henan Key Lab Laser & Optoelect Informat

Technol, Zhengzhou 450052, Henan, Peoples R China.

[Sun, Xiao-Hong] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

[Jiang, Liu-Di] Univ Southampton, Fac Engn & Environm, Engn Mat Res Grp, Southampton SO17 1BJ,

Hants, England.

Reprint Address: Zhang, X (reprint author), Zhengzhou Univ, Henan Key Lab Laser & Optoelect Informat

Technol, Zhengzhou 450052, Henan, Peoples R China.

E-mail Addresses: zhangxubetter@gmail.com

ISSN: 0003-6951

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Record 15 of 495

Title: Low cross-talk 2 x 2 silicon electro-optic switch matrix with a double-gate configuration

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)

Source: OPTICS LETTERS Volume: 38 Issue: 22 Pages: 4774-4776 DOI: 10.1364/OL.38.004774

Published: NOV 15 2013



Abstract: In this study, a low cross-talk 2 x 2 silicon electro-optic switch matrix based on a double-gate configuration is proposed and experimentally demonstrated. The switch matrix consists of four

Mach-Zehnder-based 2 x 2 switching elements with 400 mu m long modulation arms. Low cross-talk values of -31 and -43 dB are, respectively, obtained for the "cross" and "bar" states over a 40 nm wide wavelength range around 1550 nm. The values for the total steady-state power consumption of the

"cross" and "bar" states are 40.8 and 19.1 mW, respectively. (C) 2013 Optical Society of America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Yu, Yude; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State

Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.


Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0146-9592

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Record 16 of 495

Title: Widely tunable single-bandpass microwave photonic filter based on polarization processing of a nonsliced broadband optical source

Author(s): Wang, H (Wang, Hui); Zheng, JY (Zheng, Jian Yu); Li, W (Li, Wei); Wang, LX (Wang, Li Xian);

Li, M (Li, Ming); Xie, L (Xie, Liang); Zhu, NH (Zhu, Ning Hua)





Abstract: We propose a new scheme of microwave photonic filter (MPF) based on the polarization processing of a broadband optical source (BOS), which features single-bandpass response and a wide span of operation bandwidth. The BOS is orthogonally polarized by a polarization division multiplexing emulator (PDME) with a tunable time delay between the two polarization states and incident at +/- 45 degrees to one principle axis of a polarization modulator (PolM). The PDME cascades a PolM, and a polarizer realizes a microwave modulation making the phase of the carrier able to be tuned while +/- 1st sidebands remain unchanged, which after propagating in a dispersive medium results in a tunable single-bandpass response in the RF domain. We experimentally verify the MPF. By adjusting the time delay and the optical spectrum bandwidth, the passband center frequency is continuously tuned from DC to 20 GHz and the 3 dB passband bandwidth changes while the optical spectrum bandwidth ranges from

1 to 4 nm. (C) 2013 Optical Society of America

Addresses: [Wang, Hui; Zheng, Jian Yu; Li, Wei; Wang, Li Xian; Li, Ming; Xie, Liang; Zhu, Ning Hua]

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xie, L (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xiel@semi.ac.cn

ISSN: 0146-9592

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Record 17 of 495

Title: 1.06-mu m InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure

Author(s): Wang, HL (Wang, Huolei); Mi, JP (Mi, Junping); Zhou, XL (Zhou, Xuliang); Meriggi, L (Meriggi,

Laura); Steer, M (Steer, Matthew); Cui, BF (Cui, Bifeng); Chen, WX (Chen, Weixi); Pan, JQ (Pan,

Jiaoqing); Ding, Y (Ding, Ying)





Abstract: InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 mu m with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current-voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved.

The lasing wavelength is 1.055 mu m at a bias current of 80 mA at 25 degrees C. (C) 2013 Optical

Society of America

Addresses: [Wang, Huolei; Mi, Junping; Zhou, Xuliang; Pan, Jiaoqing] Chinese Acad Sci, Inst Semicond,


[Meriggi, Laura; Steer, Matthew; Ding, Ying] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark,

Scotland.

[Cui, Bifeng] Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R

China.

[Chen, Weixi] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.

[Chen, Weixi] Peking Univ, Sch Phys, Beijing 100871, Peoples R China.

Reprint Address: Pan, JQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: jqpan@semi.ac.cn

ISSN: 0146-9592

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Record 18 of 495

Title: Enhanced trion emission from colloidal quantum dots with photonic crystals by two-photon excitation

Author(s): Xu, XS (Xu, Xingsheng)

Source: SCIENTIFIC REPORTS Volume: 3 Article Number: 3228 DOI: 10.1038/srep03228




Abstract: For colloidal quantum dots, the ongoing biggest problem is their fluorescence blinking. Until now, there is no generally accepted model for this fluorescence blinking. Here, two-photon excited fluorescence from CdSe/ZnS nanocrystals on silicon nitride photonic crystals is studied using a femtosecond laser. From analysis of the spectra and decay processes, most of the relative trion efficiency is larger than 10%, and the largest relative trion efficiency reaches 46.7%. The photonic crystals enhance the trion emission of CdSe/ZnS nanocrystals, where the enhancement is due to the coupling of the trion emission to the leaky mode of the photonic crystal slab. Moreover, the photonic crystals enhance the Auger-assisted trapping efficiency of electrons/holes to surface states, and then enhance the efficiency of the generations of charge separation and DC electric field, which modifies the trion spectrum. Therefore, a model is present for explaining the mechanism of fluorescence blinking including the effect of the environment.

Addresses: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Xu, XS (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xsxu@semi.ac.cn

ISSN: 2045-2322

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Record 19 of 495

Title: 16-Channel Fiber Laser Sensing System Based on Phase Generated Carrier Algorithm

Author(s): Fang, GS (Fang, Gaosheng); Xu, TW (Xu, Tuanwei); Li, F (Li, Fang)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 22 DOI:

10.1109/LPT.2013.2282400 Published: NOV 15 2013



Abstract: A 16-channel fiber laser sensing system based on four wavelength and four space division multiplexing and phase generated carrier (PGC) algorithm is proposed. Through introducing dc block and normalization technology, the influence of light intensity and fringe visibility is decreased. A point-bypoint calculation is adopted during PGC processing and we realized 16 channels real-time synchronous demodulation with high performance and stability based on PC and LabView. The wavelength shift resolution of the system is 6 x 10(-7)pm/root Hz, the linearity is >99.9%, and the dynamic range is 115 dB at 10 Hz and 98 dB at 100 Hz. For multichannel demodulation, the amplitude consistency is >96% and crosstalk less than -60 dB has been obtained; the correlation coefficient between the real signal and demodulated signal is >98%.

Addresses: [Fang, Gaosheng; Xu, Tuanwei; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst

Lab, Beijing 100083, Peoples R China.

Reprint Address: Fang, GS (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,


E-mail Addresses: fanggaosheng@semi.ac.cn; xutuanwei@semi.ac.cn; lifang@semi.ac.cn

ISSN: 1041-1135

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Record 20 of 495

Title: Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with

AlGaN as buffer layers

Author(s): Peng, EC (Peng, Enchao); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Wang, CM

(Wang, Cuimei); Yin, HB (Yin, Haibo); Chen, H (Chen, Hong); Feng, C (Feng, Chun); Jiang, LJ (Jiang,

Lijuan); Hou, X (Hou, Xun); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 383 Pages: 25-29 DOI:

10.1016/j.jcrysgro.2013.07.017 Published: NOV 15 2013



Abstract: High electron mobility transistors (HEMTs) structures with GaN, Al0.025Ga0.975N and

Al0.04Ca0.96N high resistivity (HR) buffers were grown on sapphire by metal organic chemical vapor

deposition (MOCVD). The structural and electrical properties of these three samples were investigated and compared. By increasing Al composition of AlGaN buffer, full width at half maximum (FWHM) values of (0002) and (10-12) x-ray rocking curves for buffer increase, indicating higher threading dislocation density. Room temperature noncontact Hall measurements were performed, and the measured 2DEG mobility was 1828 cm(2)/V s for GaN buffer, 1728 m(2)/V s for Al0.025Ga0.975N buffer, and 1649 cm(2)/V s for Al0.04Ga0.96N buffer, respectively. Combining the theoretical calculation with the experiments, it was demonstrated that the decrease of mobility was attributed to higher dislocation density in sample with higher Al composition of AlGaN buffer. Devices were fabricated and it was found that the double heterojunction (DH) HEMT with Al0.025Ga0.975N buffer could effectively reduce the buffer leakage current. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong;

Feng, Chun; Jiang, Lijuan; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat

Sci, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Hou, Xun] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083,

Peoples R China.

Reprint Address: Wang, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: xlwang@semi.ac.cn

ISSN: 0022-0248

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Record 21 of 495

Title: Design of an all-optical switch and arbitrary proportion of energy output beam splitter

Author(s): Qing-Hua, L (Qing-Hua, Liao); Xuan, Z (Xuan, Zhang); Shu-Wen, C (Shu-Wen, Chen); Ping, H

(Ping, Hu); Tian-Bao, Y (Tian-Bao, Yu); Yong-Zhen, H (Yong-Zhen, Huang)

Source: PHYSICS LETTERS A Volume: 377 Issue: 38 Pages: 2561-2563 DOI:

10.1016/j.physleta.2013.07.058 Published: NOV 15 2013



Abstract: Based on the Kerr effect of photonic crystal, we design a simple structure of all-optical switch, which can be controlled by the pump intensity. At the same time, the structure can also realize the free control of energy output. It has low insertion loss and crosstalk. Numerical simulation results embody its high efficiency. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Qing-Hua, Liao; Xuan, Zhang; Shu-Wen, Chen; Ping, Hu; Tian-Bao, Yu] Nanchang Univ,

Dept Phys, Nanchang 330031, Peoples R China.

[Yong-Zhen, Huang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


Reprint Address: Qing-Hua, L (reprint author), Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R

China.

E-mail Addresses: lqhua@ncu.edu.cn

ISSN: 0375-9601

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Record 22 of 495

Title: Impact of ammonia on the electrical properties of p-type Si nanowire arrays

Author(s): Li, CB (Li, Chuanbo); Zhang, CQ (Zhang, Chunqian); Fobelets, K (Fobelets, Kristel); Zheng, J

(Zheng, Jun); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen); Wang, QM

(Wang, Qiming)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 17 Article Number: 173702 DOI:

10.1063/1.4827184 Published: NOV 7 2013



Abstract: The electrical properties of vertically upstanding p-type silicon nanowires arrays in the ambience of NH3 are studied. It is found that, the introducing of ammonia lowers their conductivity. By investigating the absorption and desorption processes of ammonia on nanowires (NW) surfaces, the current modulations of Si NWAs are interpreted in terms of band bending at the NW edge due to injections of negative carriers from ammonia. (c) 2013 AIP Publishing LLC.

Addresses: [Li, Chuanbo; Zhang, Chunqian; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen;

Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

[Fobelets, Kristel] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7

2AZ, England.

Reprint Address: Li, CB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: cbli@semi.ac.cn

ISSN: 0021-8979

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Record 23 of 495

Title: Metal to semiconductor transition in metallic transition metal dichalcogenides

Author(s): Li, Y (Li, Yan); Tongay, S (Tongay, Sefaattin); Yue, Q (Yue, Qu); Kang, J (Kang, Jun); Wu, JQ

(Wu, Junqiao); Li, JB (Li, Jingbo)


10.1063/1.4829464 Published: NOV 7 2013



Abstract: We report on tuning the electronic and magnetic properties of metallic transition metal dichalcogenides (mTMDCs) by 2D to 1D size confinement. The stability of the mTMDC monolayers and nanoribbons is demonstrated by the larger binding energy compared to the experimentally available semiconducting TMDCs. The 2D MX2 (M = Nb, Ta; X = S, Se) monolayers are non-ferromagnetic metals and mechanically softer compared to their semiconducting TMDCs counterparts. Interestingly, mTMDCs undergo metal-to-semiconductor transition when the ribbon width approaches to similar to 13 angstrom and similar to 7 angstrom for zigzag and armchair edge terminations, respectively; then these ribbons convert back to metal when the ribbon widths further decrease. Zigzag terminated nanoribbons are ferromagnetic semiconductors, and their magnetic properties can also be tuned by hydrogen edge passivation, whereas the armchair nanoribbons are non-ferromagnetic semiconductors. Our results display that the mTMDCs offer a broad range of physical properties spanning from metallic to semiconducting and non-ferromagnetic to ferromagnetic that is ideal for applications where stable narrow bandgap semiconductors with different magnetic properties are desired. (c) 2013 AIP Publishing LLC.

Addresses: [Li, Yan; Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice

& Microstruct, Beijing 100083, Peoples R China.

[Tongay, Sefaattin; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Yue, Qu] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.

Reprint Address: Li, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice &


E-mail Addresses: jbli@semi.ac.cn

ISSN: 0021-8979

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Record 24 of 495

Title: Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer



Lijuan); Hou, X (Hou, Xun); Wang, ZG (Wang, Zhanguo)


10.1016/j.jallcom.2013.04.085 Published: NOV 5 2013



Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with

AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas

(2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the

disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG. (C) 2013 Elsevier B.V. All rights reserved.


Feng, Chun; Jiang, Lijuan; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat



Peoples R China.

Reprint Address: Peng, EC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: ecpeng@semi.ac.cn

ISSN: 0925-8388

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Record 25 of 495

Title: Design of polarization-independent adiabatic splitters fabricated on silicon-on-insulator substrates

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)


10.1364/OE.21.026729 Published: NOV 4 2013



Abstract: A novel design for a polarization-independent SOI-based 2 x 2 3-dB adiabatic splitter with sub-micron-scale dimensions is proposed and modeled. To achieve slow and smooth mode evolution, a structure with simultaneous tapering of velocity and coupling is used. To reduce the adiabatic region length by adjusting the gap separation, the coupling strengths of TE and TM polarizations as a function of the gap value are analyzed. For both polarizations, a high uniformity within +/- 0.2dB over a broad bandwidth from 1520 to 1650 nm is achieved with a 300-mu m-long adiabatic region. (C)2013 Optical

Society of America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Yu, Yude; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State





ISSN: 1094-4087

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Record 26 of 495

Title: High bandwidth surface-illuminated InGaAs/InP uni-travelling- carrier photodetector

Author(s): Li, C (Li Chong); Xue, CL (Xue Chun-Lai); Li, CB (Li Chuan-Bo); Liu, Z (Liu Zhi); Cheng, BW

(Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)

Source: CHINESE PHYSICS B Volume: 22 Issue: 11 Article Number: 118503 DOI:

10.1088/1674-1056/22/11/118503 Published: NOV 2013



Abstract: Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a 15-mu m-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically values. The maximum responsivity at 1.55 mu m was 0.32 A/W. The saturation output current was over 19.0 mA without bias.

Addresses: [Li Chong; Xue Chun-Lai; Li Chuan-Bo; Liu Zhi; Cheng Bu-Wen; Wang Qi-Ming] Chinese

Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xue, CL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: clxue@semi.ac.cn

ISSN: 1674-1056

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Record 27 of 495

Title: Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

Author(s): Liu, Z (Liu Zhi); Cheng, BW (Cheng Bu-Wen); Li, YM (Li Ya-Ming); Li, CB (Li Chuan-Bo); Xue,

CL (Xue Chun-Lai); Wang, QM (Wang Qi-Ming)


10.1088/1674-1056/22/11/116804 Published: NOV 2013



Abstract: Tensile strain, crystal quality, and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 degrees C for a short period (< 20 s). The films were grown on

Si(001) substrates by ultra-high vacuum chemical vapor deposition. These improvements are attributed to relaxation and defect annihilation in the Ge films. However, after prolonged (> 20 s) rapid thermal annealing, tensile strain and crystal quality degenerated. This phenomenon results from intensive Si-Ge mixing at high temperature.

Addresses: [Liu Zhi; Cheng Bu-Wen; Li Ya-Ming; Li Chuan-Bo; Xue Chun-Lai; Wang Qi-Ming] Chinese


Reprint Address: Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab

Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbw@semi.ac.cn

ISSN: 1674-1056

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Record 28 of 495

Title: Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Author(s): Tan, RB (Tan Ren-Bing); Qin, H (Qin Hua); Zhang, XY (Zhang Xiao-Yu); Xu, W (Xu Wen)


10.1088/1674-1056/22/11/117306 Published: NOV 2013



Abstract: We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi-Dirac distribution, we calculate the transport properties of the 2DEG in the

AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation.

Then, the nonequilibrium Fermi-Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E.

Importantly, the plasmon frequency could be tuned by the applied source-drain bias voltage besides the gate voltage (change of the electron density).

Addresses: [Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu] Chinese Acad Sci, Suzhou Inst Nanotech &

Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Tan Ren-Bing] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tan Ren-Bing] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Xu Wen] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China.

Reprint Address: Qin, H (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab

Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: hqin2007@sinano.ac.cn

ISSN: 1674-1056

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Record 29 of 495

Title: High-speed and broad optical bandwidth silicon modulator

Author(s): Xu, H (Xu Hao); Li, XY (Li Xian-Yao); Xiao, X (Xiao Xi); Li, ZY (Li Zhi-Yong); Yu, YD (Yu Yu-De);

Yu, JZ (Yu Jin-Zhong)


10.1088/1674-1056/22/11/114212 Published: NOV 2013



Abstract: A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach-Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed performance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB-5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.

Addresses: [Xu Hao; Li Xian-Yao; Xiao Xi; Li Zhi-Yong; Yu Yu-De; Yu Jin-Zhong] Chinese Acad Sci, Inst





ISSN: 1674-1056

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Record 30 of 495

Title: Thermoelectric transport through a quantum dot with a magnetic impurity

Author(s): Yu, Z (Yu Zhen); Guo, Y (Guo Yu); Zheng, J (Zheng Jun); Chi, F (Chi Feng)


10.1088/1674-1056/22/11/117303 Published: NOV 2013



Abstract: We study the thermoelectric effect in a small quantum dot with a magnetic impurity in the

Coulomb blockade regime. The electrical conductance, thermal conductance, thermopower, and the thermoelectrical figure of merit (FOM) are calculated by using Green's function method. It is found that the peaks in the electrical conductance are split by the exchange coupling between the electron entering into the dot and the magnetic impurity inside the dot, accompanied by the decrease in the height of peaks.

As a result, the resonances in the thermoelectric quantities, such as the thermal conductance, thermopower, and the FOM, are all split, opening some effective new working regions. Despite of the significant reduction in the height of the electrical conductance peaks induced by the exchange coupling, the values of the FOM and the thermopower can be as large as those in the case of zero exchange coupling. We also find that the thermoelectric efficiency, characterized by the magnitude of the FOM, can be enhanced by adjusting the left-right asymmetry of the electrode-dot coupling or by optimizing the system's temperature.

Addresses: [Yu Zhen; Zheng Jun] Bohai Univ, Coll Engn, Jinzhou 121013, Peoples R China.

[Guo Yu; Chi Feng] Bohai Univ, Sch Math & Phys, Jinzhou 121013, Peoples R China.

[Zheng Jun] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,

Peoples R China.

Reprint Address: Chi, F (reprint author), Bohai Univ, Sch Math & Phys, Jinzhou 121013, Peoples R

China.

E-mail Addresses: chifeng@semi.ac.cn

ISSN: 1674-1056

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Record 31 of 495

Title: Recent progress in perpendicularly magnetized Mn-based binary alloy films

Author(s): Zhu, LJ (Zhu Li-Jun); Nie, SH (Nie Shuai-Hua); Zhao, JH (Zhao Jian-Hua)


10.1088/1674-1056/22/11/118505 Published: NOV 2013



Abstract: In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal MnxGa and MnxAl thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and permanent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxAl with strong perpendicular magnetic anisotropy.

Then, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxAl respectively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin

valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

Addresses: [Zhu Li-Jun; Nie Shuai-Hua; Zhao Jian-Hua] Chinese Acad Sci, Inst Semicond, State Key

Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 1674-1056

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Record 32 of 495

Title: Uni-traveling-carrier double heterojunction phototransistor photodetector

Author(s): Huo, WJ (Huo Wen-Juan); Xie, HY (Xie Hong-Yun); Liang, S (Liang Song); Zhang, WR (Zhang

Wan-Rong); Jiang, ZY (Jiang Zhi-Yun); Chen, X (Chen Xiang); Lu, D (Lu Dong)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 22 Article Number: 228501 DOI:

10.7498/aps.62.228501 Published: NOV 2013



Abstract: An InP/InGaAsP uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector is simulated and analyzed in a two-dimensional (2D) model utilizing a numerical device simulator (Atlas). The effects of device structure parameters on operational performance, such as responsivity and characteristic frequency, are studied in detail. Simulation results indicate that the

UTC-DHPT can ease the contradiction between detection efficiency and working speed, which exists in traditional heterojun-ction phototransistor and achieve both high responsivity (>= 17.93 A/W) and high characteristic frequency (>= 121.68 GHz) simultaneously.

Addresses: [Huo Wen-Juan; Xie Hong-Yun; Zhang Wan-Rong; Jiang Zhi-Yun; Chen Xiang; Lu Dong]

Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China.

[Huo Wen-Juan; Liang Song] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


Reprint Address: Huo, WJ (reprint author), Beijing Univ Technol, Coll Elect Informat & Control Engn,


E-mail Addresses: huowenjuan@semi.ac.cn

ISSN: 1000-3290

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Record 33 of 495

Title: Adsorption and diffusion of Pb(II) on the kaolinite(001) surface: A density-functional theory study

Author(s): He, MC (He, Man-Chao); Zhao, J (Zhao, Jian); Wang, SX (Wang, Shuang-Xi)

Source: APPLIED CLAY SCIENCE Volume: 85 Pages: 74-79 DOI: 10.1016/j.clay.2013.08.045

Published: NOV 2013



Abstract: The adsorption and diffusion of Pb(II) atom on the hydroxylated (001) surface of kaolinite were investigated using density-functional theory within the generalized gradient approximation and a supercell approach. The coverage dependence of the adsorption structures and energetics was systematically studied for a wide range of coverage Theta [from 0.11 to 1.0 monolayers (ML)] and adsorption sites. The most stable among all possible adsorption sites was the two-fold bridge site followed by the one-fold top site, and the adsorption energy increased with the coverage, thus indicating the higher stability of surface adsorption and a tendency to the formation of Pb(II) islands (clusters) with increasing coverage. Moreover, the energy barrier for diffusion of Pb(II) atom between the one-fold top and the two-fold bridge adsorption sites on kaolinite(001) surface was 0.23 (0.31) eV, implying that the

Pb(II) atom is prone to diffusing on kaolinite(001) surface. The other properties of the Pb(II)/kaolinite(001) system including the different charge distribution, the lattice relaxation, and the electronic density of states were also studied and discussed in detail. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [He, Man-Chao; Zhao, Jian] China Univ Min & Technol, State Key Lab Geomech & Deep

Underground Engn, Beijing 100083, Peoples R China.

[Wang, Shuang-Xi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


Reprint Address: Zhao, J (reprint author), China Univ Min & Technol, State Key Lab Geomech & Deep

Underground Engn, Beijing 100083, Peoples R China.

E-mail Addresses: zhaojian0209@aliyun.com

ISSN: 0169-1317

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Record 34 of 495

Title: Electronic Structural Moire Pattern Effects on MoS2/MoSe2 2D Heterostructures

Author(s): Kang, J (Kang, Jun); Li, JB (Li, Jingbo); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Wang,

LW (Wang, Lin-Wang)

Source: NANO LETTERS Volume: 13 Issue: 11 Pages: 5485-5490 DOI: 10.1021/nl4030648

Published: NOV 2013



Abstract: The structural and electronic properties of MoS2/MoSe2 bilayers are calculated using first-principles methods. It is found that the interlayer van der Waals interaction is not strong enough to form a lattice-matched coherent heterostructure. Instead, a nanometer-scale Moire pattern structure will be formed. By analyzing the electronic structures of different stacking configurations, we predict that the valence-band maximum (VBM) state will come from the Gamma point due to interlayer electronic coupling. This is confirmed by a direct calculation of a Moire pattern supercell containing 6630 atoms using the linear scaling three-dimensional fragment method. The VBM state is found to be strongly localized, while the conduction band minimum (CBM) state is only weakly localized, and it comes from the MoS2 layer at the K point. We predict such wave function localization can be a general feature for many two-dimensional (2D) van der Waals heterostructures and can have major impacts on the carrier mobility and other electronic and optical properties.

Addresses: [Kang, Jun; Li, Jingbo; Li, Shu-Shen; Xia, Jian-Bai] Chinese Acad Sci, Inst Semicond, State

Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Kang, Jun; Wang, Lin-Wang] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley,

CA 94720 USA.

Reprint Address: Wang, LW (reprint author), Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat

Sci, Berkeley, CA 94720 USA.

E-mail Addresses: lwwang@lbl.gov

ISSN: 1530-6984

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Record 35 of 495

Title: Poly(3,4-ethylenedioxythiophene) (PEDOT) as interface material for improving electrochemical performance of microneedles array-based dry electrode

Author(s): Chen, YF (Chen, Yuanfang); Pei, WH (Pei, Weihua); Chen, SY (Chen, Sanyuan); Wu, X (Wu,

Xian); Zhao, SS (Zhao, Shanshan); Wang, H (Wang, Huan); Chen, HD (Chen, Hongda)

Source: SENSORS AND ACTUATORS B-CHEMICAL Volume: 188 Pages: 747-756 DOI:

10.1016/j.snb.2013.07.075 Published: NOV 2013



Abstract: As a promising alternative for conventional wet electrode made from silver/silver chloride

(Ag/AgCl), micro-needles array (MNA)-based dry electrode has gained extensive attention. The low contact impedance between the MNA-based dry electrode and skin interfaces is pivotal for the acquisition of high quality biopotential, especially for long-term monitoring. In this report, we study, for the first time, the use of organic conductive polymer poly(3,4-ethylenedioxythiophene) (PEDOT) as the interface material of MNA-based dry electrode to improve its electrochemical performance. The interface performance of PEDOT coated dry electrode was characterized by electrochemical impedance spectroscopy and cyclic voltammetry. The mean impedance magnitudes (measured from skin) of PEDOT dry electrode are around 7.5 +/- 3.2K Omega at 2 Hz and 2.7 +/- 1.2K Omega at 100 Hz, while the values are 274.2 +/- 54.6K Omega and 31.8 +/- 9.6K Omega for gold dry electrode, and 547.1 +/- 374.2K

Omega and 79.9 +/- 10.3K Omega for commercial electroencephalography (EEG) wet electrode. The charge storage capacity (measured on rat skin sample) of PEDOT and gold was 461.48 mu C and

1.8296 mu C, respectively. These improvements provided by PEDOT interface material can significantly contribute to MNA-based dry electrode for recording or electrostimulation. Compared with commercial

EEG wet electrode, similar biopotential signals can be acquired with our PEDOT-coated MNA-based dry electrodes. (C) 2013 Published by Elsevier B.V.

Addresses: [Chen, Yuanfang; Pei, Weihua; Chen, Sanyuan; Wu, Xian; Zhao, Shanshan; Wang, Huan;

Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Pei, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: peiwh@semi.ac.cn

ISSN: 0925-4005

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Record 36 of 495

Title: High-Power Distributed Feedback Terahertz Quantum Cascade Lasers

Author(s): Wang, T (Wang, Tao); Liu, JQ (Liu, Jun-Qi); Li, YF (Li, Yan-Fang); Chen, JY (Chen, Jian-Yan);

Liu, FQ (Liu, Feng-Qi); Wang, LJ (Wang, Li-Jun); Zhang, JC (Zhang, Jin-Chuan); Wang, ZG (Wang,

Zhan-Guo)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 11 Pages: 1412-1414 DOI:

10.1109/LED.2013.2280713 Published: NOV 2013



Abstract: Single-mode operation of distributed feedback (DFB) terahertz quantum cascade lasers based on metal-stripe surface grating structure is reported. Strong DFB coupling and low waveguide loss conditions are obtained while maintaining a high laser output power. A record high edge-emitting optical power of 57 mW, similar to 96.2 mu m at 10 K together with a well-shaped far-field pattern is presented.

Reliable dynamic single-mode emission at all injection currents and operating temperatures is realized with a side-mode suppression ratio >17 dB.

Addresses: [Wang, Tao; Liu, Jun-Qi; Li, Yan-Fang; Chen, Jian-Yan; Liu, Feng-Qi; Wang, Li-Jun; Zhang,

Jin-Chuan; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


Reprint Address: Wang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: jqliu@semi.ac.cn; fqliu@red.semi.ac.cn

ISSN: 0741-3106

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Record 37 of 495

Title: Sodium Titanate Nanorod Moisture Sensor and Its Sensing Mechanism

Author(s): Zhang, YP (Zhang, Yupeng); Zhang, Y (Zhang, Ying); Fu, B (Fu, Bo); Li, W (Li, Wei); Guo, WB

(Guo, Wenbin); Ruan, SP (Ruan, Shengping); Liu, DL (Liu, Dali); Chen, Y (Chen, Yu)


10.1109/LED.2013.2282832 Published: NOV 2013



Abstract: Sodium titanate Na2Ti6O13 nanorods were synthesized by a hydrothermal method and characterized by X-ray diffraction and scanning electron microscopy. Then, the material was coated on a

Al2O3 ceramic substrate to fabricate humidity sensors using Ag-Pd as interdigitated electrodes. The sensor shows high humidity sensitivity and fast response and recovery. The impedance changes by five orders of magnitude over a relative humidity (RH) range from 11% to 95%. At the frequency of 100 Hz, response and recovery times are both <2 s, and the maximum hysteresis is <3% RH. In addition, the complex impedance at different RH was investigated to understand the sensing mechanism. The results indicate potential applications of sodium titanate for fabricating high-performance humidity sensors.

Addresses: [Zhang, Yupeng; Zhang, Ying; Fu, Bo; Li, Wei; Guo, Wenbin; Ruan, Shengping; Liu, Dali;

Chen, Yu] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Zhang, Yupeng; Zhang, Ying; Fu, Bo; Li, Wei; Guo, Wenbin; Ruan, Shengping; Liu, Dali; Chen, Yu]

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, YP (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Changchun


E-mail Addresses: guowb@jlu.edu.cn

ISSN: 0741-3106

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Record 38 of 495

Title: Effect of the thickness of Bi2Se3 sheets on the morphologies of Bi2Se3-ZnS nanocomposites and improved photoresponsive characteristic

Author(s): Li, RX (Li, Renxiong); Wang, ML (Wang, Meili); Meng, XQ (Meng, Xiuqing); Wei, ZM (Wei,

Zhongming)

Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 24 Issue: 11

Pages: 4197-4203 DOI: 10.1007/s10854-013-1383-z Published: NOV 2013



Abstract: Bi2Se3-ZnS nanocomposites were synthesized with different morphologies and their photoluminescence were investigated. The compounds formed hexagonal rods as the thickness of

Bi2Se3 sheets stayed about a few nanometers; while the Bi2Se3 sheets' thickness increased to tens of nanometers, the compounds formed novel morphologies of Bi2Se3-ZnS nanocomposites with small ZnS nanoparticles randomly decorated onto Bi2Se3 sheets. The formation mechanism was proposed based on the different thickness of Bi2Se3 sheets used in experimental processes. In addition, the significant fluorescence quench and obvious improvement in photoresponsive characteristic were shown after the integration of ZnS with Bi2Se3 sheets, which showed potential application in optoelectronic devices.

Addresses: [Li, Renxiong; Wei, Zhongming] Chinese Acad Sci, Inst Semicond, State Key Lab


[Wang, Meili] BOE Technol Grp Co Ltd, Large Size AMOLED Project, BP Team, Ctr Technol, Beijing,

Peoples R China.

[Meng, Xiuqing] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R

China.

[Wei, Zhongming] Univ Copenhagen, Dept Chem, Nanosci Ctr, DK-2100 Copenhagen O, Denmark.

Reprint Address: Li, RX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &

Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: renxiongli@semi.ac.cn; zmwei@semi.ac.cn

ISSN: 0957-4522

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Record 39 of 495

Title: Analysis of effects of front and back surface dopants on silicon vertical multi-junction solar cell by

2D numerical simulation

Author(s): Xing, YP (Xing YuPeng); Han, PD (Han PeiDe); Wang, S (Wang Shuai); Liang, P (Liang Peng);

Lou, SS (Lou ShiShu); Zhang, YB (Zhang YuanBo); Hu, SX (Hu ShaoXu); Zhu, HS (Zhu HuiShi); Mi, YH

(Mi YanHong); Zhao, CH (Zhao ChunHua)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 11 Pages: 2798-2807

DOI: 10.1007/s11431-013-5378-z Published: NOV 2013



Abstract: The silicon vertical multi-junction (VMJ) solar cell has a good potential in high concentration, but it requires high quality front and back surface passivation layers to keep its high efficiency. We try to add dopants into the front and back surfaces of the VMJ cell to release this strict requirement in this work. The effects of recombination velocities, doping types and doping profiles of front and back surfaces on the performance of the P-type VMJ cell were calculated under 1 sun and 1000 suns. The 2D numerical simulation tool TCAD software was used. The performance of the VMJ cell without front and back surface dopants was also calculated for comparison. It was found that the requirement of high quality front and back surface passivation layers could be released remarkably by adding either N-type or P+-type front and back surface dopants. For the two types of front surface dopants, the highest efficiencies of the cells were got by light dopant; for the two types of back surface dopants, the doping type and profile affected little on the performance of the cell in our calculation range. It was also found that the series resistance of the VMJ cell with N-type front surface dopant was decreased by the 2D effect of front surface emitter.

The VMJ cell with P+-type front surface dopant had the highest efficiency under 1000 suns and the VMJ cell with N-type front surface dopant had the highest efficiency under 1 sun in our calculation range.

Addresses: [Xing YuPeng; Han PeiDe; Wang Shuai; Liang Peng; Lou ShiShu; Zhang YuanBo; Hu

ShaoXu; Zhu HuiShi; Mi YanHong; Zhao ChunHua] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Xing, YP (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xingyupeng@semi.ac.cn

ISSN: 1674-7321

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Record 40 of 495

Title: A compact neural recording interface based on silicon microelectrode

Author(s): Han, JQ (Han JianQiang); Zhang, X (Zhang Xu); Pei, WH (Pei WeiHua); Gui, Q (Gui Qiang);

Liu, M (Liu Ming); Chen, HD (Chen HongDa)


DOI: 10.1007/s11431-013-5359-2 Published: NOV 2013



Abstract: A prototype of hybrid neural recording interface has been developed for extracellular neural recording. It consists of a silicon-based plane microelectrode array and a CMOS low noise neural amplifier chip. The neural amplifier chip is designed and implemented in 0.18 mu m N-well CMOS 1P6M technology. The area of the neural preamplifier is only 0.042 mm(2) with a gain of 48.3 dB. The input equivalent noise is 4.73 mu Vrms within pass bands of 4 kHz. To avoid cable tethering for high dense multichannel neural recording interface and make it compact, flip-chip bonding is used to integrate the preamplifier chip and the microelectrode together. The hybrid device measures 3 mmx5.5 mmx330 mu m, which is convenient for implant or in-vivo neural recording. The hybrid device was testified in in-vivo experiment. Neural signals were recorded from hippocampus region of anesthetized Sprague Dawley rats successfully.

Addresses: [Han JianQiang; Zhang Xu; Pei WeiHua; Gui Qiang; Liu Ming; Chen HongDa] Chinese Acad

Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhang, X (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: zhangxu@semi.ac.cn

ISSN: 1674-7321

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Record 41 of 495

Title: All-Metal Optical Fiber Accelerometer With Low Transverse Sensitivity for Seismic Monitoring

Author(s): Jiang, DS (Jiang, Dongshan); Zhang, WT (Zhang, Wentao); Li, F (Li, Fang)

Source: IEEE SENSORS JOURNAL Volume: 13 Issue: 11 Pages: 4556-4560 DOI:

10.1109/JSEN.2013.2270554 Published: NOV 2013



Abstract: An all-metal double metal diaphragm-based optical fiber accelerometer with low transverse sensitivity is proposed and experimentally demonstrated. The theoretical analysis is given based on the electro-mechanical theory. Finite element modal analysis shows that the proposed accelerometer has low transverse sensitivity. Calibration results show that axis responsivity is 41 dB (re: 0 dB = 1 rad/g) with a fluctuation +/-2 dB in frequency bandwidth of 5-400 Hz. The transverse sensitivity is similar to 3 dB (re:

0 dB = 1 rad/g) with a fluctuation +/-1.5 dB. A transverse sensitivity of about -40 dB is achieved. The fluctuation of the acceleration responsivity for the three accelerometers is within +/-2.5 dB, which shows good consistency of the proposed accelerometer. The minimum phase demodulation detection accuracy of the phase-generated carrier is 10(-5) rad/Hz(1/2), and the minimum detectable acceleration can be 90 ng/Hz(1/2) theoretically. With an all-metal structure, the proposed accelerometer is expected to improve the reliability of long-term use in harsh environment. These desirable features show that the proposed optical fiber accelerometer is promising for seismic wave monitoring in oil and gas exploration.

Addresses: [Jiang, Dongshan; Zhang, Wentao; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect

Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Jiang, DS (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,


E-mail Addresses: zhangwt@semi.ac.cn

ISSN: 1530-437X

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Record 42 of 495

Title: Low-threshold, high SMSR tunable external cavity quantum cascade laser around 4.7 mu m

Author(s): Tan, S (Tan, S.); Zhang, JC (Zhang, J. C.); Zhuo, N (Zhuo, N.); Wang, LJ (Wang, L. J.); Liu, FQ

(Liu, F. Q.); Yao, DY (Yao, D. Y.); Liu, JQ (Liu, J. Q.); Wang, ZG (Wang, Z. G.)

Source: OPTICAL AND QUANTUM ELECTRONICS Volume: 45 Issue: 11 Pages: 1147-1155 DOI:

10.1007/s11082-013-9731-z Published: NOV 2013



Abstract: Room-temperature pulsed and continuous-wave (cw) operation of a tunable external cavity (EC) quantum cascade laser (QCL) at an emitting wavelength of was presented. The effect of different external cavity lengths and grating angles of the EC-QCL system were analyzed numerically. A wide tuning range greater than was obtained in pulsed mode at room temperature. Without the anti-reflection coating procedure, single-mode cw operation with a side-mode suppression ratio (SMSR) above 20 dB and a wide tuning range greater than were achieved. Near the center region, SMSR about 30 dB was also realized through designing the external cavity length. Strain-compensation combined with two-phonon resonance in an active region design and the high-reflection coating promised low threshold current density. A record low threshold current density of for an EC-QCL operated in cw mode was realized.

Addresses: [Tan, S.; Zhang, J. C.; Zhuo, N.; Wang, L. J.; Liu, F. Q.; Yao, D. Y.; Liu, J. Q.; Wang, Z. G.]

Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Tan, S.] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Wang, LJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: ts870222@semi.ac.cn; ljwang@semi.ac.cn; fqliu@red.semi.ac.cn

ISSN: 0306-8919

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Record 43 of 495

Title: Ohmic contact to n-type Ge with compositional Ti nitride

Author(s): Wu, HD (Wu, H. D.); Huang, W (Huang, W.); Lu, WF (Lu, W. F.); Tang, RF (Tang, R. F.); Li, C

(Li, C.); Lai, HK (Lai, H. K.); Chen, SY (Chen, S. Y.); Xue, CL (Xue, C. L.)

Source: APPLIED SURFACE SCIENCE Volume: 284 Pages: 877-880 DOI:

10.1016/j.apsusc.2013.08.028 Published: NOV 1 2013



Abstract: Fermi-Level pinning at Ge surface results in high Schottky barrier height (SBH) for nearly all metal/n-Ge contacts. By varying composition of the TiNx, modulation of the SBH was demonstrated for

TiNx/n-Ge contact. The effective SBH of the TiN0.1/n-Ge Schottky contact was found decreased to 0.45 eV, as compared to the Ti/n-Ge contact SBH which was originally pinned at 0.56 eV. Ohmic contact to n-type Ge was realized by increasing the nitrogen composition to x = 0.8 in TiNx. Dipoles formed by the difference of the Pauling electronegativities for Ge and N at the contact interface is proposed to alleviate the Fermi-Level pinning effect. (C) 2013 Elsevier B. V. All rights reserved.

Addresses: [Wu, H. D.; Huang, W.; Lu, W. F.; Tang, R. F.; Li, C.; Lai, H. K.; Chen, S. Y.] Xiamen Univ,

Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China.

[Xue, C. L.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Huang, W (reprint author), Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen

361005, Fujian, Peoples R China.

E-mail Addresses: weihuang@xmu.edu.cn; lich@xmu.edu.cn

ISSN: 0169-4332

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Record 44 of 495

Title: Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer

Author(s): Li, CB (Li, Chuanbo); Fobelets, K (Fobelets, Kristel); Liu, C (Liu, Chang); Xue, CL (Xue,

Chunlai); Cheng, BW (Cheng, Buwen); Wang, QM (Wang, Qiming)


10.1063/1.4826930 Published: OCT 28 2013



Abstract: Ag-assisted anisotropic lateral etching along the < 100 > directions in Si nanowire arrays (Si

NWAs) is investigated. It is found that Ag ions, generated by H2O2 oxidation of Ag particles, re-nucleate on the sidewalls of the nanowires, causing side etching and tapering of the wires. By enhancing the side etching effect, fractures can be formed at specific positions along the nanowires. This technique is applied to transfer large-area Si NWAs onto a glass substrate. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming] Chinese Acad Sci, Inst


[Fobelets, Kristel; Liu, Chang] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn,

London SW7 2AZ, England.




ISSN: 0003-6951

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Record 45 of 495

Title: Efficiency enhancement of polymer solar cells by localized surface plasmon of Au nanoparticles

Author(s): Gao, HL (Gao, H. L.); Zhang, XW (Zhang, X. W.); Yin, ZG (Yin, Z. G.); Zhang, SG (Zhang, S.

G.); Meng, JH (Meng, J. H.); Liu, X (Liu, X.)


10.1063/1.4827181 Published: OCT 28 2013



Abstract: We demonstrate the improvement of power conversion efficiency (PCE) in bulk heterojunction polymer solar cells based on blended poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester by introducing 40 nm Au nanoparticles (NPs) with various concentrations. The Au NPs were deposited on indium-tin-oxide (ITO) substrates by spin-coating from colloidal solution prior to deposition of poly

(3,4-ethylene dioxythiophene: poly (styrene sulfonate) (PEDOT:PSS) buffer layer. It has been found that both short-circuit current density and PCE increase after incorporating Au NPs between ITO and PEDOT:

PSS layer, and a suitable area density of Au NPs is required to achieve a maximum enhancement of device efficiency. The PCE of solar cells has been increased from 3.50% to 3.81% with 0.9wt.% Au NPs.

The PCE enhancement is attributed to the localized surface plasmon excitation of Au NPs. The method employed herein is a kind of simple and convenient solution process, and it has great potential in future practical applications. (C) 2013 AIP Publishing LLC.

Addresses: [Gao, H. L.; Zhang, X. W.; Yin, Z. G.; Zhang, S. G.; Meng, J. H.; Liu, X.] Chinese Acad Sci,

Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, XW (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: xwzhang@semi.ac.cn

ISSN: 0021-8979

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Record 46 of 495

Title: Modeling an antenna-coupled graphene field-effect terahertz detector

Author(s): Tan, RB (Tan, Ren-Bing); Qin, H (Qin, Hua); Sun, JD (Sun, Jian-Dong); Zhang, XY (Zhang,

Xiao-Yu); Zhang, BS (Zhang, Bao-Shun)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 17 Article Number: DOI:

10.1063/1.4826118 Published: OCT 21 2013



Abstract: The effect of ambipolar carriers on terahertz self-mixing is theoretically investigated in an antenna-coupled graphene field-effect terahertz (GFET) detector by taking into account the spatial distributions of the charge carriers and the terahertz field. The model predicts that the charge and field

distributions can be tuned by the gate voltage so that they match up with each other and enhance the photocurrent. Such a cooperative self-mixing does not occur in unipolar FET detectors. A GFET detector with a moderate carrier mobility could offer current responsivity of a few A/W and noise-equivalent power below 50 pW/root Hz at room temperature. (C) 2013 AIP Publishing LLC.

Addresses: [Tan, Ren-Bing; Qin, Hua; Sun, Jian-Dong; Zhang, Xiao-Yu; Zhang, Bao-Shun] Chinese Acad

Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R

China.

[Tan, Ren-Bing] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tan, Ren-Bing] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China.

Reprint Address: Qin, H (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou

Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

E-mail Addresses: hqin2007@sinano.ac.cn

ISSN: 0003-6951

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Record 47 of 495

Title: Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width



Lijuan); Qu, SQ (Qu, Shenqi); Kang, H (Kang, He); Hou, X (Hou, Xun); Wang, ZG (Wang, Zhanguo)


10.1063/1.4825318 Published: OCT 21 2013



Abstract: This is a theoretical study of GaN-based heterostructures with unintentionally doped (UID) GaN channel layer and high-resistivity (HR) GaN buffer layer doped by deep acceptors. Self-consistent

Schrodinger-Poisson (SP) numerical simulation shows that, by increasing the acceptor concentration in the HR buffer or narrowing the width of UID channel, the quantum confinement of two-dimensional electron gas (2DEG) is enhanced, while the sheet density of 2DEG is reduced. The tuning effect of 2DEG density is attributed to the depletion effect of negative space charges composed of ionized acceptors located in the region between the UID channel and the Fermi-level pinned region in the HR buffer. For the heterostructure without the UID channel, the 2DEG can be depleted as the acceptor concentration is beyond a critical value. However, by inserting a UID channel layer, the depletion effect of buffer acceptor on 2DEG density is reduced. To gain a further insight into the physics, a simple analytical model is developed, which reproduces well the results of SP simulation. By comparing our theoretical results with the experimental ones, a good agreement is reached, thus the validity of our model is verified. (C) 2013

AIP Publishing LLC.


Feng, Chun; Jiang, Lijuan; Qu, Shenqi; Kang, He] Chinese Acad Sci, Inst Semicond, Key Lab Semicond

Mat Sci, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Wang, Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing,

Peoples R China.


Peoples R China.




ISSN: 0021-8979

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Record 48 of 495

Title: Theoretical study of transport property in InAsSb quantum well heterostructures

Author(s): Zhang, YW (Zhang, Yuwei); Zhang, Y (Zhang, Yang); Guan, M (Guan, Min); Cui, LJ (Cui, Lijie);

Wang, CY (Wang, Chengyan); Zeng, YP (Zeng, Yiping)


10.1063/1.4826071 Published: OCT 21 2013



Abstract: Theoretical studies of transport properties in InAsSb-based quantum well heterostructures are presented. The concentration of two-dimensional electron gas is calculated self-consistently from our improved Schrodinger-Poisson model by taking into account of nonparabolicity effect and strain effect, and the results are used to obtain the electron mobility. All major scattering mechanisms by acoustic phonon, polar optical phonon, remote ionized impurity, background impurity, interface roughness, and alloy disorder have been included in our calculation. Particularly, dislocation scattering, intrasubband scattering, and intersubband scattering, which are always neglected in heterostructure systems, are considered. The calculated electron mobility is proved to be in good agreement with the experimental data for modulation-doped AlSb/InAsSb quantum well heterostructures. With a view to optimize the transport property, quantum well width, spacer thickness, barrier thickness, and remote doping concentration for AlSb/InAsSb heterostructures are discussed to examine their effect on total electron mobility. Intrinsic electron mobility exceeding 40 000 cm(2)/Vs is predicted at 300 K for

AlSb/InAs0.4Sb0.6 heterostructures which is dominated by a combination of polar optical phonon scattering, remote ionized impurity scattering, and interface roughness scattering. (C) 2013 AIP

Publishing LLC.

Addresses: [Zhang, Yuwei; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Chengyan; Zeng, Yiping] Chinese

Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, Y (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,

POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: terahertzantenna@163.com

ISSN: 0021-8979

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Record 49 of 495

Title: Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys

Author(s): Fan, SF (Fan, Shunfei); Qin, ZX (Qin, Zhixin); He, CG (He, Chenguang); Hou, MJ (Hou,

Mengjun); Wang, XQ (Wang, Xinqiang); Shen, B (Shen, Bo); Li, W (Li, Wei); Wang, WY (Wang, Weiying);

Mao, DF (Mao, Defeng); Jin, P (Jin, Peng); Yan, JC (Yan, Jianchang); Dong, P (Dong, Peng)


10.1364/OE.21.024497 Published: OCT 21 2013



Abstract: The exciton localization in wurtzite AlxGa1-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa1-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization.

(C) 2013 Optical Society of America

Addresses: [Fan, Shunfei; Qin, Zhixin; He, Chenguang; Hou, Mengjun; Wang, Xinqiang; Shen, Bo]

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R

China.

[Li, Wei; Wang, Weiying; Mao, Defeng; Jin, Peng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond


[Yan, Jianchang; Dong, Peng] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev


Reprint Address: Qin, ZX (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct &

Mesoscop P, Beijing 100871, Peoples R China.

E-mail Addresses: zxqin@pku.edu.cn

ISSN: 1094-4087

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Record 50 of 495

Title: Integrated waveguide Bragg gratings for microwave photonics signal processing

Author(s): Burla, M (Burla, Maurizio); Cortes, LR (Cortes, Luis Romero); Li, M (Li, Ming); Wang, X (Wang,

Xu); Chrostowski, L (Chrostowski, Lukas); Azana, J (Azana, Jose)


10.1364/OE.21.025120 Published: OCT 21 2013



Abstract: Integrated Microwave photonics (IMWP) signal processing using Photonic Integrated Circuits

(PICs) has attracted a great deal of attention in recent years as an enabling technology for a number of functionalities not attainable by purely microwave solutions. In this context, integrated waveguide Bragg grating (WBG) devices constitute a particularly attractive approach thanks to their compactness and flexibility in producing arbitrarily defined amplitude and phase responses, by directly acting on coupling coefficient and perturbations of the grating profile. In this article, we review recent advances in the field of integrated WBGs applied to MWP, analyzing the advantages leveraged by an integrated realization. We provide a perspective on the exciting possibilities offered by the silicon photonics platform in the field of

MWP, potentially enabling integration of highly-complex active and passive functionalities with high yield on a single chip, with a particular focus on the use of WBGs as basic building blocks for linear filtering operations. We demonstrate the versatility of WBG-based devices by proposing and experimentally demonstrating a novel, continuously-tunable, integrated true-time-delay (TTD) line based on a very simple dual phase-shifted WBG (DPS-WBG). (C) 2013 Optical Society of America

Addresses: [Burla, Maurizio; Cortes, Luis Romero; Azana, Jose] INRS EMT, Varennes, PQ J3X 1S2,

Canada.

[Li, Ming] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Xu; Chrostowski, Lukas] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T

1Z4, Canada.

Reprint Address: Burla, M (reprint author), INRS EMT, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2,

Canada.

E-mail Addresses: maurizio.burla@gmail.com; azana@emt.inrs.ca

ISSN: 1094-4087

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Record 51 of 495

Title: Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes

Author(s): Du, CX (Du, Chengxiao); Wei, TB (Wei, Tongbo); Zheng, HY (Zheng, Haiyang); Wang, LC

(Wang, Liancheng); Geng, C (Geng, Chong); Yan, QF (Yan, Qingfeng); Wang, JX (Wang, Junxi); Li, JM

(Li, Jinmin)


10.1364/OE.21.025373 Published: OCT 21 2013



Abstract: Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of

LEDs was also investigated by using three-dimensional finite-difference time-domain simulations. (C)

2013 Optical Society of America

Addresses: [Du, Chengxiao; Wei, Tongbo; Zheng, Haiyang; Wang, Liancheng; Wang, Junxi; Li, Jinmin]

Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R

China.

[Geng, Chong; Yan, Qingfeng] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Chem,


Reprint Address: Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol

Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: tbwei@semi.ac.cn

ISSN: 1094-4087

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Record 52 of 495

Title: Triangular-range-intensity profile spatial-correlation method for 3D super-resolution range-gated

imaging

Author(s): Wang, XW (Wang Xinwei); Li, YF (Li Youfu); Zhou, Y (Zhou Yan)

Source: APPLIED OPTICS Volume: 52 Issue: 30 Pages: 7399-7406 DOI: 10.1364/AO.52.007399

Published: OCT 20 2013



Abstract: We present a triangular-range-intensity profile (RIP) spatial-correlation method for 3D range-gated imaging with a depth of super resolution. In this method, spatial sampling volumes with triangular-RIPs are established by matching laser-pulse width and sensor gate time, and then depth information collapsed in gate images can be reconstructed by spatial correlation of overlapped gate images corresponding to sampling volumes. Compared with super-resolution depth mapping under trapezoidal-RIPs, range accuracy and precision are improved, and a large range fluctuation due to noise disturbance is smoothed by noise suppression under triangular-RIPs. In this paper, a proof experiment is demonstrated with a range precision 2.5 times better than that obtained under trapezoidal-RIPs. (C) 2013

Optical Society of America

Addresses: [Wang Xinwei; Zhou Yan] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing


[Wang Xinwei; Li Youfu] City Univ Hong Kong, Dept Mech & Biomed Engn, Hong Kong, Hong Kong,

Peoples R China.

Reprint Address: Li, YF (reprint author), City Univ Hong Kong, Dept Mech & Biomed Engn, Hong Kong,

Hong Kong, Peoples R China.

E-mail Addresses: meyfli@cityu.edu.hk

ISSN: 1559-128X

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Record 53 of 495

Title: Nanotetrapods: quantum dot hybrid for bulk heterojunction solar cells

Author(s): Tan, FR (Tan, Furui); Qu, SC (Qu, Shengchun); Li, FM (Li, Fumin); Jiang, QW (Jiang, Qiwei);

Chen, C (Chen, Chong); Zhang, WF (Zhang, Weifeng); Wang, ZG (Wang, Zhanguo)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 434 DOI:

10.1186/1556-276X-8-434 Published: OCT 19 2013



Abstract: Hybrid thin film solar cell based on all-inorganic nanoparticles is a new member in the family of photovoltaic devices. In this work, a novel and performance-efficient inorganic hybrid nanostructure with continuous charge transportation and collection channels is demonstrated by introducing CdTe nanotetropods (NTs) and CdSe quantum dots (QDs). Hybrid morphology is characterized, demonstrating an interpenetration and compacted contact of NTs and QDs. Electrical measurements show enhanced charge transfer at the hybrid bulk heterojunction interface of NTs and QDs after ligand exchange which accordingly improves the performance of solar cells. Photovoltaic and light response tests exhibit a combined optic-electric contribution from both CdTe NTs and CdSe QDs through a formation of interpercolation in morphology as well as a type II energy level distribution. The NT and QD hybrid bulk heterojunction is applicable and promising in other highly efficient photovoltaic materials such as PbS

QDs.

Addresses: [Tan, Furui; Li, Fumin; Jiang, Qiwei; Chen, Chong; Zhang, Weifeng] Henan Univ, Dept Phys &

Elect, Key Lab Photovolta Mat, Kaifeng 475004, Henan, Peoples R China.

[Qu, Shengchun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


Reprint Address: Qu, SC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: qsc@semi.ac.cn

ISSN: 1931-7573

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Record 54 of 495

Title: Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field

Author(s): Yue, Q (Yue, Qu); Shao, ZZ (Shao, Zhengzheng); Chang, SL (Chang, Shengli); Li, JB (Li,

Jingbo)


10.1186/1556-276X-8-425 Published: OCT 17 2013



Abstract: Using first-principles calculations, we investigate the adsorption of various gas molecules (H-2,

O-2, H2O, NH3, NO, NO2, and CO) on monolayer MoS2. The most stable adsorption configuration, adsorption energy, and charge transfer are obtained. It is shown that all the molecules are weakly adsorbed on the monolayer MoS2 surface and act as charge acceptors for the monolayer, except NH3 which is found to be a charge donor. Furthermore, we show that charge transfer between the adsorbed molecule and MoS2 can be significantly modulated by a perpendicular electric field. Our theoretical results are consistent with the recent experiments and suggest MoS2 as a potential material for gas sensing application.

Addresses: [Yue, Qu; Shao, Zhengzheng; Chang, Shengli] Natl Univ Def Technol, Coll Sci, Changsha

410073, Hunan, Peoples R China.

[Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083,

Peoples R China.

Reprint Address: Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice &



ISSN: 1931-7573

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Record 55 of 495

Title: Compact and low-loss silicon power splitter based on inverse tapers

Author(s): Li, XY (Li, Xianyao); Xu, H (Xu, Hao); Xiao, X (Xiao, Xi); Li, ZY (Li, Zhiyong); Yu, JZ (Yu,

Jinzhong); Yu, YD (Yu, Yude)





Abstract: A compact, low-loss, optical power splitter based on inverse tapers is proposed and fabricated on a silicon-on-insulator platform. High efficiency mode evolution between the fundamental mode of the input waveguide and the super mode of the output waveguides is realized using optimized tapers. A 1 x 4 splitter with insertion loss lower than 0.4 dB and uniformity better than 0.68 dB in a wavelength range from 1510 to 1550 nm are demonstrated within a footprint of only similar to 75 mu m(2). These properties are very promising for ultrahigh density photonic integration applications. (C) 2013 Optical Society of

America

Addresses: [Li, Xianyao; Xu, Hao; Xiao, Xi; Li, Zhiyong; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci, Inst





ISSN: 0146-9592

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Record 56 of 495

Title: Nonequilibrium. Shot Noise Spectrum Through a Quantum Dot in the Kon.do Regime: A Master

Equation Approach under Self-Consistent Born Approximation

Author(s): Liu, Y (Liu Yu); Jin, JS (Jin Jin-Shuang); Li, J (Li Jun); Li, XQ (Li Xin-Qi); Yan, YJ (Yan Yi-Jing)

Source: COMMUNICATIONS IN THEORETICAL PHYSICS Volume: 60 Issue: 4 Pages: 503-509




Abstract: We construct a number(n)-resolved master equation (ME) approach under self-consistent Born approximation (SCBA) for noise spectrum calculation. The formulation is essentially non-Markovian and incorporates properly the interlay of the multi-tunneling processes and many-body correlations. We apply this approach to the challenging none quilibrium Kondo system and predict a profound nonequilibriurn

Kondo signature in the shot noise spectrum. The proposed n-SCBA-ME scheme goes completely

beyond the scope of the Born-Markovian master equation approach, in the sense of being applicable to the shot noise of transport under small bias voltage, in non-Markovian regime, and with strong Coulomb correlations as favorably demonstrated in the none quilibrium Kondo system.

Addresses: [Liu Yu; Li Xin-Qi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


[Jin Jin-Shuang] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China.

[Li Jun] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

[Li Xin-Qi] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.

[Yan Yi-Jing] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China.

[Li Jun] Dezhou Univ, Coll Phys & Elect Engn, Dezhou 253023, Peoples R China.

Reprint Address: Liu, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


E-mail Addresses: jsjin@hznu.edu.cn; lixinqi@bnu.edu.cn

ISSN: 0253-6102

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Record 57 of 495

Title: Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

Author(s): Le, LC (Le, L. C.); Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Li, L (Li, L.); Wu, LL (Wu, L.

L.); Chen, P (Chen, P.); Liu, ZS (Liu, Z. S.); Yang, J (Yang, J.); Li, XJ (Li, X. J.); He, XG (He, X. G.); Zhu,

JJ (Zhu, J. J.); Wang, H (Wang, H.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.)


10.1063/1.4824801 Published: OCT 14 2013



Abstract: The effect of quantum barrier (QB) thickness on performances of InGaN/GaN multiple-quantum-well light-emitting diodes (MQW LEDs) with relatively large barrier layer thicknesses has been investigated. It is found that the density and averaged size of V-defects increases with QB thickness, resulting in larger reverse-and forward-bias current in LEDs. Electroluminescence measurement shows that LED with thinner QB has higher internal quantum efficiency but lower efficiency droop-onset current density, which should be ascribed to the faster saturation of carrier leakage into

V-defects. Correspondingly, above the droop-onset current density, severer Auger recombination and carrier overflow are induced by higher carrier density due to the less V-defect related carrier leakage, leading to the more serious droop phenomenon in LEDs with thinner QB. (C) 2013 AIP Publishing LLC.

Addresses: [Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He,

X. G.; Yang, H.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

[Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion,

Suzhou 215125, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 0021-8979

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Record 58 of 495

Title: Interface-Induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells

Author(s): Zhang, D (Zhang, Dong); Lou, WK (Lou, Wenkai); Miao, MS (Miao, Maosheng); Zhang, SC

(Zhang, Shou-cheng); Chang, K (Chang, Kai)

Source: PHYSICAL REVIEW LETTERS Volume: 111 Issue: 15 Article Number: 156402 DOI:

10.1103/PhysRevLett.111.156402 Published: OCT 11 2013



Abstract: We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which

leads to a topological insulator transition. Our work provides a new method to realize topological insulators in commonly used semiconductors and suggests a promising approach to integrate it in well-developed semiconductor electronic devices.

Addresses: [Zhang, Dong; Lou, Wenkai; Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing


[Miao, Maosheng] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA.

[Miao, Maosheng] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA.

[Zhang, Shou-cheng] Stanford Univ, Dept Phys, Stanford, CA 94305 USA.

[Chang, Kai] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

Reprint Address: Chang, K (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing


E-mail Addresses: kchang@semi.ac.cn

ISSN: 0031-9007

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Record 59 of 495

Title: Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet of GaAs nanowire

Author(s): Shang, XJ (Shang, Xiangjun); Yu, Y (Yu, Ying); Zha, GW (Zha, Guowei); Li, MF (Li, Mifeng);

Wang, LJ (Wang, Lijuan); Xu, JX (Xu, Jianxing); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 46 Issue: 40 Article Number:

405102 DOI: 10.1088/0022-3727/46/40/405102 Published: OCT 9 2013



Abstract: Inspired by the novel quantum dot (QD) structure, GaAs/AlAs core/shell QD on the facet of

GaAs/AlGaAs nanowire (NW), and its nice single-photon emission properties in Heiss et al's work (2013

Nature Mater. 12 439), a mechanism of wavefunction resonance in QD, induced by the AlAs shell surrounding QD, is proposed and proved by Schrodinger equation simulation. The thin AlAs shell between GaAs NW and QD, acting as a tunnelling barrier, determines QD emission linewidth. A 3 nm thick AlAs shell gives a linewidth of 35 mu eV. QD emission efficiency and lifetime are studied by rate equations. The parallel decay channel along continuous GaAs NW band, in rate of Gamma(R), reduces

QD emission lifetime. For Gamma(R) = 1 x 10(9) s(-1) and 3 nm thick AlAs shell, the lifetime is 680 ps.

The AlAs shell thickness shows opposite influences on QD spectral linewidth and emission efficiency, and thus must be traded off.

Addresses: [Shang, Xiangjun; Yu, Ying; Zha, Guowei; Li, Mifeng; Wang, Lijuan; Xu, Jianxing; Ni, Haiqiao;

Niu, Zhichuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


Reprint Address: Shang, XJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab

Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xjshang@semi.ac.cn; zcniu@semi.ac.cn

ISSN: 0022-3727

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Record 60 of 495

Title: Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Author(s): Li, ZC (Li, Zengcheng); Liu, JP (Liu, Jianping); Feng, MX (Feng, Meixin); Zhou, K (Zhou, Kun);

Zhang, SM (Zhang, Shuming); Wang, H (Wang, Hui); Li, DY (Li, Deyao); Zhang, LQ (Zhang, Liqun); Zhao,

DG (Zhao, Degang); Jiang, DS (Jiang, Desheng); Wang, HB (Wang, Huaibing); Yang, H (Yang, Hui)


10.1063/1.4824850 Published: OCT 7 2013



Abstract: Local InGaN quantum well (QW) decomposition and resultant inhomogeneous luminescence in green laser diode (LD) epitaxial structures are investigated using micro-photoluminescence, Z-contrast scanning transmission electron microscopy, and high-resolution transmission electron microscopy. The local InGaN QW decomposition is found to happen during p-type layer growth due to too high thermal budget and may initiate at the InGaN/GaN QW upper interface probably due to the formation of In-rich

InGaN clusters there. Reducing thermal budget and optimizing InGaN/GaN QW growth suppress the local InGaN QW decomposition, and green LD structures with homogeneous luminescence and bright electroluminescence (EL) intensity are obtained. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Zengcheng; Feng, Meixin; Zhou, Kun; Zhao, Degang; Jiang, Desheng; Yang, Hui]


[Li, Zengcheng; Liu, Jianping; Feng, Meixin; Zhou, Kun; Zhang, Shuming; Wang, Hui; Li, Deyao; Zhang,

Liqun; Wang, Huaibing; Yang, Hui] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123,

Peoples R China.

[Li, Zengcheng; Liu, Jianping; Feng, Meixin; Zhou, Kun; Zhang, Shuming; Wang, Hui; Li, Deyao; Zhang,

Liqun; Wang, Huaibing; Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou


Reprint Address: Liu, JP (reprint author), SIP, SEID, 398 Ruoshui Rd, Suzhou 215123, Peoples R China.

E-mail Addresses: jpliu2010@sinano.ac.cn

ISSN: 0003-6951

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Record 61 of 495

Title: Magnetic and Gilbert damping properties of L-21-Co2FeAl film grown by molecular beam epitaxy

Author(s): Qiao, S (Qiao, Shuang); Nie, SH (Nie, Shuaihua); Zhao, JH (Zhao, Jianhua); Huo, Y (Huo,

Yan); Wu, YZ (Wu, Yizheng); Zhang, XH (Zhang, Xinhui)


10.1063/1.4824654 Published: OCT 7 2013



Abstract: Co2FeAl film with L-21 structure was prepared. Its magnetic and Gilbert damping properties were studied by ferromagnetic resonance (FMR) and time-resolved magneto-optical Kerr effect

(TR-MOKE), respectively. It is observed that the apparent damping parameter decreases drastically with increasing magnetic field at low field regime and eventually becomes a constant value of 0.004 at high field regime by TR-MOKE measurements. A Gilbert damping parameter of 0.008 in the hard axis by FMR measurement has also been obtained, which is comparable with that extracted from TR-MOKE measurements at low external field, indicating the extrinsic damping processes involved in the low field regime. (C) 2013 AIP Publishing LLC.

Addresses: [Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui] Chinese Acad Sci, Inst

Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Huo, Yan; Wu, Yizheng] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433,

Peoples R China.

[Huo, Yan; Wu, Yizheng] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China.

Reprint Address: Zhang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: xinhuiz@semi.ac.cn

ISSN: 0003-6951

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Record 62 of 495

Title: N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Author(s): Wang, LC (Wang, Liancheng); Ma, J (Ma, Jun); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan);

Yuan, GD (Yuan, Guodong); Wang, GH (Wang, Guohong)


10.1063/1.4823849 Published: OCT 7 2013



Abstract: N-polar GaN etching process and mechanism has been investigated in detail by varying the etching parameter (etchant temperature, etchant concentration, and etching duration) in KOH and

H3PO4. Quasi-perfect micro-scale hexagonal pyramids vertical light emitting diodes (mu-HP VLEDs) array with least active area loss (<12%) has been fabricated by N-polar etching. The mu-HP VLEDs shows massively improved crystal quality with X-ray diffraction full width at half maxima decreased from

442 s to 273 s, and the room temperature minority carriers decay time increased from 252 ps to 747 ps.

Temperature dependence of photoluminescence result reveals a similar to 30% improved internal quantum efficiency, and transmission electron microscope further reveals its quasi-perfect crystalline quality clearly. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, Liancheng; Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong; Wang, Guohong]


China.

[Wang, Liancheng] Nanyang Technol Univ, Sch Elect & Elect Engn, Luminous Ctr Excellence Semicond

Lighting & Displ, Singapore 639798, Singapore.

Reprint Address: Wang, LC (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting

Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: wanglc@ntu.edu.sg; spring@semi.ac.cn

ISSN: 0021-8979

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Record 63 of 495

Title: Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess

Author(s): Fang, Q (Fang, Qing); Jia, LX (Jia, Lianxi); Song, JF (Song, Junfeng); Lim, AEJ (Lim, Andy E.

J.); Tu, XG (Tu, Xiaoguang); Luo, XS (Luo, Xianshu); Yu, MB (Yu, Mingbin); Lo, GQ (Lo, Guoqiang)


10.1364/OE.21.023325 Published: OCT 7 2013



Abstract: In this paper, we demonstrate a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess on a SOI wafer. A 120nm-deep Si recess is etched on the SOI wafer with a 340nm-thick top Si layer by the TMAH solution. The measured results show that the responsivity is more than 0.60 A/W for TE polarization and is more than 0.65 A/W for TM polarization at 1550 nm wavelength. Compared to the photo-detector without the Si recess, the responsivities for both TE and TM polarizations are improved by similar to 10%. A low dark current of 170 nA is achieved at a bias voltage of -1 V. And, the 3dB-bandwidth at a bias voltage of -3 V is 21.5 GHz. This approach can be used to improve the coupling and absorption for high responsivity of photo-detector while maintain its high speed on a thick SOI platform based on the simulation results. (C) 2013 Optical Society of America

Addresses: [Fang, Qing; Jia, Lianxi; Song, Junfeng; Lim, Andy E. J.; Tu, Xiaoguang; Luo, Xianshu; Yu,

Mingbin; Lo, Guoqiang] A STAR Agcy Sci & Technol Res, Inst Microelect, Singapore 117685, Singapore.

[Fang, Qing] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Song, Junfeng] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun


Reprint Address: Fang, Q (reprint author), A STAR Agcy Sci & Technol Res, Inst Microelect, Singapore

117685, Singapore.

E-mail Addresses: fangq@ime.a-star.edu.sg

ISSN: 1094-4087

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Record 64 of 495

Title: Direct generation of broadband chaos by a monolithic integrated semiconductor laser chip

Author(s): Wu, JG (Wu, Jia-Gui); Zhao, LJ (Zhao, Ling-Juan); Wu, ZM (Wu, Zheng-Mao); Lu, D (Lu, Dan);

Tang, X (Tang, Xi); Zhong, ZQ (Zhong, Zhu-Qiang); Xia, GQ (Xia, Guang-Qiong)


10.1364/OE.21.023358 Published: OCT 7 2013



Abstract: A solitary monolithic integrated semiconductor laser (MISL) chip with a size of 780 micrometer is designed and fabricated for broadband chaos generation. Such a MISL chip consists of a DFB section, a phase section and an amplification section. Test results indicate that under suitable operation conditions, this laser chip can be driven into broadband chaos. The generated chaos covers an RF frequency range, limited by our measurement device, of 26.5GHz, and possesses significant dimension and complexity. Moreover, the routes into and out of chaos are also characterized through extracting variety dynamical states of temporal waveforms, phase portraits, RF spectra and statistical indicators. (C)

2013 Optical Society of America

Addresses: [Wu, Jia-Gui; Wu, Zheng-Mao; Tang, Xi; Zhong, Zhu-Qiang; Xia, Guang-Qiong] Southwest

Univ, Sch Phys, Chongqing 400715, Peoples R China.

[Zhao, Ling-Juan; Lu, Dan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


Reprint Address: Xia, GQ (reprint author), Southwest Univ, Sch Phys, Chongqing 400715, Peoples R

China.

E-mail Addresses: gqxia@swu.edu.cn

ISSN: 1094-4087

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Record 65 of 495

Title: Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 mu m

Author(s): Yan, SL (Yan, Shilian); Zhang, L (Zhang, Ling); Yu, HJ (Yu, Haijuan); Li, ML (Li, Menglong);

Sun, W (Sun, Wei); Hou, W (Hou, Wei); Lin, XC (Lin, Xuechun); Wang, YG (Wang, Yonggang); Wang, YS

(Wang, Yishan)

Source: OPTICAL ENGINEERING Volume: 52 Issue: 10 Article Number: 106107 DOI:

10.1117/1.OE.52.10.106107 Published: OCT 2013



Abstract: We demonstrated a passively Q-switched Nd:YAG laser operating at 1.319 mu m using a transmission-type single-wall carbon nanotube (SWCNT) as the saturable absorber. This is the first report on using SWCNT as a Q-switcher for 1.319 mu m Nd:YAG laser in a side-pumped configuration. A maximum output power of 780 mW was obtained with 1.15-mu s pulse duration and 42.7-kHz repetition rate. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)

Addresses: [Yan, Shilian; Zhang, Ling; Yu, Haijuan; Li, Menglong; Sun, Wei; Hou, Wei; Lin, Xuechun]

Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

[Wang, Yonggang; Wang, Yishan] Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab

Transient Opt & Photon, Xian 710119, Peoples R China.

Reprint Address: Yan, SL (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light

Sources, Beijing 100083, Peoples R China.

E-mail Addresses: xclin@semi.ac.cn; chinawygxjw@hotmail.com

ISSN: 0091-3286

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Record 66 of 495

Title: A LOW POWER 2.4 GHz RF TRANSCEIVER FOR ZIGBEE APPLICATIONS

Author(s): Liu, WY (Liu, Weiyang); Chen, JJ (Chen, Jingjing); Wang, HY (Wang, Haiyong); Wu, NJ (Wu,

Nanjian)

Source: JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS Volume: 22 Issue: 9 Special

Issue: SI Article Number: 1340007 DOI: 10.1142/S0218126613400070 Published: OCT 2013



Abstract: This paper presents a low power RF transceiver for 2.4 GHz ZigBee applications. The current reused inductor-less-load balun low noise amplifier (LNA) with quadrature mixer is proposed for area and power saving for low-IF receiver. The transmitter adopts power efficient power ampli fier (PA) to improve transmitting efficiency. This RF transceiver is implemented in 0.18 mu m CMOS technology. The receiver achieves 6.5 dB noise figure (NF) and 20 dB conversion gain. The transmitter delivers maximum +3dBm output power with PA efficiency of 30%. The receiver and transmitter front-end dissipate 1.9 mW and 5.3 mW at 1.8 V supply, respectively. The whole die area is 0.95 mm(2).

Addresses: [Liu, Weiyang; Chen, Jingjing; Wang, Haiyong; Wu, Nanjian] Chinese Acad Sci, Inst


Reprint Address: Wu, NJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: nanjian@red.semi.ac.cn

ISSN: 0218-1266

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Record 67 of 495

Title: Design of a high-speed silicon electro-optical modulator based on an add-drop micro-ring resonator

Author(s): Cao, TT (Cao Tong-Tong); Zhang, LB (Zhang Li-Bin); Fei, YH (Fei Yong-Hao); Cao, YM (Cao

Yan-Mei); Lei, X (Lei Xun); Chen, SW (Chen Shao-Wu)


10.7498/aps.62.194210 Published: OCT 2013



Abstract: Silicon electro-optical modulators based on add-drop micro-ring resonators have the advantage of more freedom in designing high-extinction-ratio and large-bandwidth modulators without changing the ion doping processes of the chip. Here we design a highspeed silicon modulator based on an add-drop micro-ring resonator with a radius of 20 mu m; it demonstrates high extinction ratio with low reverse bias.

How the coupling between the straight waveguide and the ring resonator affects the performances is studied theoretically and it is found that a lower coupling coefficient at drop port leads to a higher extinction ratio but not the best bandwidth. Therefore, a balance should be considered between extinction ratio and bandwidth. According to the optimized result of the parameters the device is fabricated and tested. The spectrum testing indicates that the device can have 12 dB extinction ratio when it is operated at 3 V reverse bias. Furthermore, we have observed 8 Gbps open-eye diagram with only 1.2 V peak-to-peak signal voltage.

Addresses: [Cao Tong-Tong; Zhang Li-Bin; Fei Yong-Hao; Cao Yan-Mei; Lei Xun; Chen Shao-Wu]

Chinese Acad Sci, Inst Semicond, State Key Lab Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Chen, SW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Optoelect,


E-mail Addresses: swchen@semi.ac.cn

ISSN: 1000-3290

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Record 68 of 495

Title: Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN

Author(s): Li, XJ (Li Xiao-Jing); Zhao, DG (Zhao De-Gang); He, XG (He Xiao-Guang); Wu, LL (Wu

Liang-Liang); Li, L (Li Liang); Yang, J (Yang Jing); Le, LC (Le Ling-Cong); Chen, P (Chen Ping); Liu, ZS

(Liu Zong-Shun); Jiang, DS (Jiang De-Sheng)





Abstract: In this paper, we investigate the effect of annealing conditions on the characteristic of Ni/Au

Ohmic contact to p-GaN. The specific contact resistivities under different annealing temperature and different annealing atmosphere are tested using the circular transmission line model. It is found that the best annealing temperature is about 500 C. The annealing atmosphere of nitrogen-oxygen gas mixture can lead to lower specific contact resistivity than that of pure nitrogen, and the specific contact resistivity has no relationship with the content of oxygen. Finally, we obtain the lowest specific contact resistivity to be 7.65 x 10(-4) Omega.cm(2) at the best annealing temperature and atmosphere.

Addresses: [Li Xiao-Jing; Zhao De-Gang; He Xiao-Guang; Wu Liang-Liang; Li Liang; Yang Jing; Le

Ling-Cong; Chen Ping; Liu Zong-Shun; Jiang De-Sheng] Chinese Acad Sci, Inst Semicond, State Key

Lab Integrated Optoelect, Beijing 100083, Peoples R China.




ISSN: 1000-3290

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Record 69 of 495

Title: Properties of delta doped GaAs/A1(chi)Ga(1-chi) As 2DEG with embedded InAs quantum dots

Author(s): Wang, HP (Wang Hong-Pei); Wang, GL (Wang Guang-Long); Yu, Y (Yu Ying); Xu, YQ (Xu

Ying-Qiang); Ni, HQ (Ni Hai-Qiao); Niu, ZC (Niu Zhi-Chuan); Gao, FQ (Gao Feng-Qi)





Abstract: The delta-doped GaAs/AlxGa1-xAs 2DEG samples are grown with molecular beam epitaxy. In this process, the doping concentration (Nd), spatial isolation layer thickness (Wd) and Al component of

ALGai_ As (xAl) are changed separately. Then Hall measurements on the samples are made in the two temperature conditions (300 and 78 K). According to the test results, the relationships of Nd, Wd and xAl to the carrier density and mobility of GaAs/AlxGa1-xAs 2DEG are discussed respectively. The b-doped

GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dot samples are grown, and InAs quantum dots with different densities are grown with gradient growth method. The Hall measurement results show that the mobility of GaAs/AEGai_ As 2DEG greatly decreases with density of InAs quantum dots steadily increasing. In experiments, the lowest density of 16 x 108/cm2 InAs quantum dot sample is obtained. The experimental results can provide a reference for the study and application of b-doped GaAs/AlxGa1-xAs

2DEG with embedded InAs quantum dots.

Addresses: [Wang Hong-Pei; Wang Guang-Long; Gao Feng-Qi] Ordnance Engn Coll, Lab Nanotechnol

& Microsyst, Shijiazhuang 050003, Peoples R China.

[Wang Hong-Pei; Yu Ying; Xu Ying-Qiang; Ni Hai-Qiao; Niu Zhi-Chuan] Chinese Acad Sci, Inst Semicond,

Natl Lab Superlatt & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wang, HP (reprint author), Ordnance Engn Coll, Lab Nanotechnol & Microsyst,

Shijiazhuang 050003, Peoples R China.

E-mail Addresses: realwhp@163.com

ISSN: 1000-3290

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Record 70 of 495

Title: Quantum-dot gated field effect enhanced single-photon detectors

Author(s): Wang, HP (Wang Hong-Pei); Wang, GL (Wang Guang-Long); Ni, HQ (Ni Hai-Qiao); Xu, YQ

(Xu Ying-Qiang); Niu, ZC (Niu Zhi-Chuan); Gao, FQ (Gao Feng-Qi)





Abstract: In order to solve the problem of low light absorption efficiency of single photon detectors based on quantum-dot gated field effect transistor (QDFET), a new type of quantum-dot gated field effect enhanced single-photon detectors (QDFEE-SPD) was proposed. QDFEE-SPD was designed with a resonant cavity, and the GaAs/AlAs multilayer was used as the basic mirror. The light absorption efficiency and responsivity of QDFEE-SPD were analyzed and simulated. Results show that, compared with that without cavity, the absorption efficiency and responsivity of the QDFEE-SPD is greatly improved.

Also for the optimization of light absorption efficiency, the thickness of the absorption layer should normally be 0.1-0.5 mu m. Then the material samples of QDFEE-SPD were grown and tested. Reflection spectroscopy and PL spectroscopy testing results show that the light absorption efficiency has been significantly enhanced. The achievements in this article provide a new way for researching high-efficiency single-photon detection technology based on QDFET.

Addresses: [Wang Hong-Pei; Wang Guang-Long; Gao Feng-Qi] Ordnance Engn Coll, Lab Nanotechnol

& Microsyst, Shijiazhuang 050003, Peoples R China.

[Wang Hong-Pei; Ni Hai-Qiao; Xu Ying-Qiang; Niu Zhi-Chuan] Chinese Acad Sci, Inst Semicond, Natl

Lab Superlatt & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wang, HP (reprint author), Ordnance Engn Coll, Lab Nanotechnol & Microsyst,

Shijiazhuang 050003, Peoples R China.

E-mail Addresses: realwhp@163.com

ISSN: 1000-3290

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Record 71 of 495

Title: Study of data format transform with optical waveguide resonators

Author(s): Zhang, LB (Zhang Li-Bin); Chen, SW (Chen Shao-Wu); Fei, YH (Fei Yong-Hao); Cao, TT (Cao

Tong-Tong); Cao, YM (Cao Yan-Mei); Lei, X (Lei Xun)





Abstract: Based on the linear property of silicon microring resonators, we experimentally observed that such resonator can transform square-wave signal into pulse-wave signal, and the output waveform is strongly dependent on the input wavelength. We then proposed a mathematical model, which utilized linear coupling mode theory, Fourier transform and electro-optical Mach-Zehnder (MZ) intensity modulation functions. The numerical simulation results fit well with the experimental results. Besides, we gave a detailed explanation based on the transfer function of microrings. Furthermore, we have studied the case when the ring resonator is deviated from the critical coupling condition, and found that the coupling state, over coupling or under coupling, can be easily judged through the output waveform.

Addresses: [Zhang Li-Bin; Chen Shao-Wu; Fei Yong-Hao; Cao Tong-Tong; Cao Yan-Mei; Lei Xun]


Reprint Address: Chen, SW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1000-3290

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Record 72 of 495

Title: Design and fabrication of a high-performance evanescently coupled waveguide photodetector

Author(s): Liu, SQ (Liu Shao-Qing); Yang, XH (Yang Xiao-Hong); Liu, Y (Liu Yu); Li, B (Li Bin); Han, Q

(Han Qin)


10.1088/1674-1056/22/10/108503 Published: OCT 2013



Abstract: In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photodetector operating at 1.55 mu m, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain

(3D FDTD) method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

Addresses: [Liu Shao-Qing; Yang Xiao-Hong; Liu Yu; Li Bin; Han Qin] Chinese Acad Sci, Inst Semicond,

State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xhyang@semi.ac.cn; hanqin@red.semi.ac.cn

ISSN: 1674-1056

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Record 73 of 495

Title: A mode-locked external-cavity quantum-dot laser with a variable repetition rate

Author(s): Wu, J (Wu Jian); Jin, P (Jin Peng); Li, XK (Li Xin-Kun); Wei, H (Wei Heng); Wu, YH (Wu

Yan-Hua); Wang, FF (Wang Fei-Fei); Chen, HM (Chen Hong-Mei); Wu, J (Wu Ju); Wang, ZG (Wang

Zhan-Guo)


10.1088/1674-1056/22/10/104206 Published: OCT 2013



Abstract: A mode-locked external-cavity laser emitting at 1.17-mu m wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively.

The narrowest -3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation.

Addresses: [Jin Peng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing


Reprint Address: Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: pengjin@semi.ac.cn

ISSN: 1674-1056

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Record 74 of 495

Title: A high figure of merit localized surface plasmon sensor based on a gold nanograting on the top of a gold planar film

Author(s): Zhang, ZY (Zhang Zu-Yin); Wang, LN (Wang Li-Na); Hu, HF (Hu Hai-Feng); Li, KW (Li

Kang-Wen); Ma, XP (Ma Xun-Peng); Song, GF (Song Guo-Feng)


10.1088/1674-1056/22/10/104213 Published: OCT 2013



Abstract: We investigate the sensitivity and figure of merit (FOM) of a localized surface plasmon (LSP) sensor with gold nanograting on the top of planar metallic film. The sensitivity of the localized surface plasmon sensor is 317 nm/RIU, and the FOM is predicted to be above 8, which is very high for a localized surface plasmon sensor. By employing the rigorous coupled-wave analysis (RCWA) method, we analyze the distribution of the magnetic field and find that the sensing property of our proposed system is attributed to the interactions between the localized surface plasmon around the gold nanostrips and the surface plasmon polarition on the surface of the gold planar metallic film. These findings are important for developing high FOM localized surface plasmon sensors.

Addresses: [Zhang Zu-Yin; Wang Li-Na; Hu Hai-Feng; Li Kang-Wen; Ma Xun-Peng; Song Guo-Feng]

Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhang, ZY (reprint author), Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect,


E-mail Addresses: wo2baobao1213@163.com

ISSN: 1674-1056

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Record 75 of 495

Title: High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared

Author(s): Liu, Z (Liu, Zhe); Luo, T (Luo, Tao); Liang, B (Liang, Bo); Chen, G (Chen, Gui); Yu, G (Yu,

Gang); Xie, XM (Xie, Xuming); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: NANO RESEARCH Volume: 6 Issue: 11 Pages: 775-783 DOI:

10.1007/s12274-013-0356-0 Published: OCT 2013



Abstract: InAs is a direct, narrow band gap (0.354 eV) material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 x 10(3) AW(-1), 1.03 x

10(6)%, and 2.6 x 10(11) Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse.

Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse.

Addresses: [Liu, Zhe; Liang, Bo; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab


[Liu, Zhe; Luo, Tao; Liang, Bo; Chen, Gui; Yu, Gang; Xie, Xuming; Chen, Di] Huazhong Univ Sci &

Technol, WNLO, Wuhan 430074, Peoples R China.

[Liu, Zhe; Luo, Tao; Liang, Bo; Chen, Gui; Yu, Gang; Xie, Xuming; Chen, Di] Huazhong Univ Sci &

Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.

Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, WNLO, Wuhan 430074,

Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 1998-0124

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Record 76 of 495

Title: A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

Author(s): Chen, P (Chen Ping); Zhao, DG (Zhao De-Gang); Feng, MX (Feng Mei-Xin); Jiang, DS (Jiang

De-Sheng); Liu, ZS (Liu Zong-Shun); Zhang, LQ (Zhang Li-Qun); Li, DY (Li De-Yao); Liu, JP (Liu

Jian-Ping); Wang, H (Wang Hui); Zhu, JJ (Zhu Jian-Jun); Zhang, SM (Zhang Shu-Ming); Zhang, BS

(Zhang Bao-Shun); Yang, H (Yang Hui)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 10 Article Number: 104205 DOI:

10.1088/0256-307X/30/10/104205 Published: OCT 2013



Abstract: An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.

Addresses: [Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui]


[Feng Mei-Xin; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming;

Zhang Bao-Shun; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab





ISSN: 0256-307X

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Record 77 of 495

Title: Temperature Characteristics of Monolithically Integrated Wavelength-Selectable Light Sources

Author(s): Han, LS (Han Liang-Shun); Zhu, HL (Zhu Hong-Liang); Zhang, C (Zhang Can); Ma, L (Ma Li);

Liang, S (Liang Song); Wang, W (Wang Wei)


10.1088/0256-307X/30/10/108501 Published: OCT 2013



Abstract: The temperature characteristics of monolithically integrated wavelength-selectable light sources are experimentally investigated. The wavelength-selectable light sources consist of four distributed feedback (DFB) lasers, a multimode interferometer coupler, and a semiconductor optical amplifier. The oscillating wavelength of the DFB laser could be modulated by adjusting the device operating temperature. A wavelength range covering over 8.0 nm is obtained with stable single-mode operation by selecting the appropriate laser and chip temperature. The thermal crosstalk caused by the lateral heat spreading between lasers operating simultaneously is evaluated by oscillating-wavelength shift. The thermal crosstalk approximately decreases exponentially as the increasing distance between lasers.

Addresses: [Han Liang-Shun; Zhu Hong-Liang; Zhang Can; Ma Li; Liang Song; Wang Wei] Chinese Acad

Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhu, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: zhuhl@red.semi.ac.cn

ISSN: 0256-307X

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Record 78 of 495

Title: New Energy Storage Option: Toward ZnCo2O4 Nanorods/Nickel Foam Architectures for

High-Performance Supercapacitors

Author(s): Liu, B (Liu, Bin); Liu, BY (Liu, Boyang); Wang, QF (Wang, Qiufan); Wang, XF (Wang, Xianfu);

Xiang, QY (Xiang, Qingyi); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 5 Issue: 20 Pages: 10011-10017

DOI: 10.1021/am402339d Published: OCT 2013



Abstract: Hierarchical ZnCo2O4/nickel foam architectures were first fabricated from a simple scalable solution approach, exhibiting outstanding electrochemical performance in supercapacitors with high specific capacitance (similar to 1400 F g(-1) at 1 A g(-1)), excellent rate capability (72.5% capacity retention at 20 A g(-1)), and good cycling stability (only 3% loss after 1000 cycles at 6 A g(-1)).

All-solid-state supercapacitors were also fabricated by assembling two pieces of the ZnCo2O4-based electrodes, showing superior performance in terms of high specific capacitance and long cycling stability.

Our work confirms that the as-prepared architectures can not only be applied in high energy density fields, but also be used in high power density applications, such as electric vehicles, flexible electronics, and energy storage devices.

Addresses: [Liu, Bin; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


[Liu, Bin; Liu, Boyang; Wang, Qiufan; Wang, Xianfu; Xiang, Qingyi; Chen, Di] Huazhong Univ Sci &


[Liu, Bin; Liu, Boyang; Wang, Qiufan; Wang, Xianfu; Xiang, Qingyi; Chen, Di] Huazhong Univ Sci &

Technol, Coll Opt & Elect Informat, Wuhan 430074, Peoples R China.

Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, WNLO, Wuhan 430074,

Peoples R China.


ISSN: 1944-8244

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Record 79 of 495

Title: Photovoltaic performance optimization of methyl 4-[6,6]-C61-benzoate based polymer solar cells with thermal annealing approach

Author(s): Chi, D (Chi, Dan); Liu, C (Liu, Chao); Qu, SC (Qu, Shengchun); Zhang, ZG (Zhang, Zhi-Guo);

Li, YJ (Li, Yongjun); Li, YL (Li, Yuliang); Wang, JZ (Wang, Jizheng); Wang, ZG (Wang, Zhanguo)

Source: SYNTHETIC METALS Volume: 181 Pages: 117-122 DOI: 10.1016/j.synthmet.2013.08.019




Abstract: A new type of fullerene acceptor, methyl 4-[6,6]-C61-benzoate (MCB), was used to fabricate bulk heterojunction solar cells in combination with poly(3-hexylthiopene) (P3HT) as donor. To optimization of device performance, the effect of annealing temperature was investigated in the range of

80-180 degrees C. And the highest power conversion efficiency (PCE) of 3.49% was achieved after baking the device at 110 degrees C for 10 min. This optimization condition was associated with the surface morphology of blend films as investigated by atomic force microscope and optical microscope.

The device parameters were also analyzed by the relationship among the open circuit voltage, the short circuit current density, the reverse saturation current density and the ideality factor. Moreover, the devices were stable and the PCE showed about 90% durability even after 72 days. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Chi, Dan; Qu, Shengchun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab

Semicond Mat Sci, Beijing 100083, Peoples R China.

[Chi, Dan; Liu, Chao; Zhang, Zhi-Guo; Li, Yongjun; Li, Yuliang; Wang, Jizheng] Chinese Acad Sci, Inst

Chem, Being Natl Lab Mol Sci, CAS Key Lab Organ Solids, Beijing 100190, Peoples R China.



E-mail Addresses: qsc@semi.ac.cn; zgzhangwhu@iccas.ac.cn

ISSN: 0379-6779

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Record 80 of 495

Title: Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

Author(s): Li, HJ (Li, Hongjian); Li, PP (Li, Panpan); Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Li, ZC (Li,

Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 10 Article Number: 102103 DOI:

10.7567/APEX.6.102103 Published: OCT 2013



Abstract: We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep

InGaN QWs and GaN barriers. Without using any phosphors, this monolithic LED chip can be tuned to realize wide-range multicolor emissions from red to yellow under different injection currents. In partical, when the injection current reaches an upper level above 100 mA, the LEDs will achieve white emission with a very high color rending index (CRI) of 85.6. This color-tunable characteristic is attributed to the carrier redistribution in the shallow/deep QWs and the energy band filling effect as well. (c) 2013 The

Japan Society of Applied Physics

Addresses: [Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang,

Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R

China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr,


E-mail Addresses: semi_lihongjian@126.com

ISSN: 1882-0778

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Record 81 of 495

Title: Four-wavelength microdisk laser array laterally coupled with a bus waveguide

Author(s): Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Long, H

(Long, Heng); Yao, QF (Yao, Qi-Feng); Xiao, JL (Xiao, Jin-Long); Du, Y (Du, Yun)





Abstract: A four-wavelength microdisk laser array laterally coupled with a bus waveguide is demonstrated numerically and experimentally. The coupled-mode characteristics as well as scattering loss in the bus waveguide caused by the connected microdisks are simulated by a 2D finite-difference time-domain technique. An AlGaInAs/InP microdisk laser array with circular radii of 10.1, 10.2, 10.3, and 10.4 mu m is designed and fabricated by common photolithography and an inductively coupled-plasma etching technique. Continuous-wave electrically injected operation is realized at room temperature with the lowest threshold current of 3 mA. Four-wavelength lasing operation is realized with wavelength intervals of 3-4 nm and side mode suppression ratios larger than 25 dB. Finally, the influences of heating effect and thermal cross talk on lasing mode wavelength tuning are investigated experimentally. (C) 2013

Optical Society of America

Addresses: [Zou, Ling-Xiu; Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Yao, Qi-Feng; Xiao, Jin-Long;

Du, Yun] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples

R China.

Reprint Address: Huang, YZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: yzhuang@semi.ac.cn

ISSN: 0146-9592

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Record 82 of 495

Title: Nonblocking 4x4 silicon electro-optic switch matrix with push-pull drive

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Zhou, PJ (Zhou, Peiji); Xiao, X (Xiao, Xi); Yu, JZ

(Yu, Jinzhong); Yu, YD (Yu, Yude)





Abstract: A compact rearrangeable nonblocking 4 x 4 silicon electro-optic switch matrix based on a

Spanke-Benes network is proposed and fabricated by a 0.18 mu m standard commercial complementary metal-oxide semiconductor line. By respectively modulating the two modulation arms with a push-pull drive, a cross talk (CT) of less than -18 dB is obtained for the switching element with 150-mu m-long modulation arms. The total steady-state power consumption of the switch matrix ranges from 4.46 to

35.92 mW for different routing states. The CT values of the routing state with the minimum and maximum power consumptions are less than -19 dB and less than -12 dB, respectively. (C) 2013 Optical Society of

America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Zhou, Peiji; Xiao, Xi; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci,

Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.




ISSN: 0146-9592

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Record 83 of 495

Title: Enhanced optical absorption in nanohole-textured silicon thin-film solar cells with rear-located metal particles

Author(s): Chen, YK (Chen, Yankun); Han, WH (Han, Weihua); Yang, FH (Yang, Fuhua)





Abstract: We report the computational modeling of Ag nanoparticles deposited on the rear of a nanohole-textured silicon thin film to achieve higher absorption for silicon solar cells. The silicon nanoholes and the rear-located Ag nanoparticles can enhance the absorption in the silicon thin film. The short circuit current density for nanohole-textured silicon thin film can be further improved by about 11.6% by Ag nanoparticles. The combination of silicon nanoholes and plasmonic metal nanoparticles provides a promising way to enhance the absorption of silicon thin-film solar cells. (C) 2013 Optical Society of

America

Addresses: [Chen, Yankun; Han, Weihua; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr

Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Han, WH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


E-mail Addresses: weihua@semi.ac.cn

ISSN: 0146-9592

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Record 84 of 495

Title: AlGaN/GaN Schottky Diode Fabricated by Au Free Process

Author(s): Jia, LF (Jia, Lifang); Yan, W (Yan, Wei); Fan, ZC (Fan, Zhongchao); He, Z (He, Zhi); Wang, XD

(Wang, Xiaodong); Wang, GH (Wang, Guohong); Yang, FH (Yang, Fuhua)


10.1109/LED.2013.2278337 Published: OCT 2013



Abstract: An AlGaN/GaN Schottky diode is fabricated using an Au free process. Both ohmic and Schottky contact are studied. The ohmic contact results show low contact resistance and good surface morphology.

The specific resistance (rho(c)) and contact resistance (R-c) of the ohmic contact are similar to 3.5x10(-5)

Omega x cm(2) and 2.1 Omega . mm, respectively. Several current transport mechanisms are employed to analyze the measured I-V curves of the diode. The data have demonstrated that at a lower forward bias the combination of generation recombination and tunneling current mechanisms are dominant,

whereas the thermionic emission mechanism becomes more significant at a higher forward bias. The effective Schottky barrier height is estimated to be 0.99 eV. The breakdown voltage of AlGaN/GaN

Schottky diode is similar to 125 V.

Addresses: [Jia, Lifang; Yan, Wei; Fan, Zhongchao; He, Zhi; Wang, Xiaodong; Wang, Guohong; Yang,

Fuhua] Chinese Acad Sci, Engn Res Ctr Semicond Integrat Technol, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Jia, LF (reprint author), Chinese Acad Sci, Engn Res Ctr Semicond Integrat Technol,

Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: hezhi@semi.ac.cn

ISSN: 0741-3106

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Record 85 of 495

Title: Photonic Generation of Ultrawideband Signals With Large Carrier Frequency Tunability Based on an Optical Carrier Phase-Shifting Method

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Zheng, JY (Zheng, Jian Yu); Li, M (Li, Ming); Zhu,

NH (Zhu, Ning Hua)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 5 Article Number: 5502007 DOI:

10.1109/JPHOT.2013.2284260 Published: OCT 2013



Abstract: We theoretically and experimentally demonstrated a novel photonic approach to generating ultrawideband (UWB) pulses with large carrier frequency tunability based on an optical carrier phase-shifting technique by cascading polarization modulators (PolMs) and a polarizer. The UWB pulses are generated by truncating a continuous wave (CW) RF signal into a pulsed signal in a photodetector

(PD). The experimental results show that the base-band frequency components and the strong residual local oscillator (LO) signal are well suppressed. In addition, the generated UWB signals satisfy the

Federal Communications Commission (FCC) spectral mask very well.

Addresses: [Li, Wei; Wang, Li Xian; Zheng, Jian Yu; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, Inst


Reprint Address: Zhu, NH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: nhzhu@semi.ac.cn

ISSN: 1943-0655

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Record 86 of 495

Title: Enhanced 1524-nm Emission From Ge Quantum Dots in a Modified Photonic Crystal L3 Cavity

Author(s): Zhang, Y (Zhang, Yong); Zeng, C (Zeng, Cheng); Li, DP (Li, Danping); Huang, ZZ (Huang,

Zengzhi); Li, KZ (Li, Kezheng); Yu, JZ (Yu, Jinzhong); Li, JT (Li, Juntao); Xu, XJ (Xu, Xuejun); Maruizumi,

T (Maruizumi, Takuya); Xia, JS (Xia, Jinsong)





Abstract: Light emitters based on Ge quantum dots embedded in modified photonic crystal three defect-long (L3) cavities are fabricated and characterized. Several sharp resonant luminescence peaks dominate the photoluminescence (PL) spectrum at room temperature. The strongest resonant luminescence peak is obtained at 1524 nm. The enhancement factor is 110, and the corresponding

Purcell factor is estimated to be 6.7. The large enhancement is due to high Purcell factor and high collection efficiency of modified L3 cavity verified by far-field patterns. The intrinsic Q factor measured from crossed-polarized resonant scattering is much higher than the Q factor measured from PL, indicating that the Q factors measured from PL are inaccurate due to free-carrier absorption of the photogenerated carriers.

Addresses: [Zhang, Yong; Zeng, Cheng; Li, Danping; Huang, Zengzhi; Yu, Jinzhong; Xia, Jinsong]

Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074,

Peoples R China.

[Li, Kezheng; Li, Juntao] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275,

Guangdong, Peoples R China.

[Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Xu, Xuejun; Maruizumi, Takuya] Tokyo City Univ, Adv Res Labs, Res Ctr Silicon Nanosci, Tokyo

1580082, Japan.

Reprint Address: Xia, JS (reprint author), Huazhong Univ Sci & Technol, Sch Opt & Elect Informat,

Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

E-mail Addresses: jinsongxia@gmail.com

ISSN: 1943-0655

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Record 87 of 495

Title: Monolithic Integrated Silicon Photonic Interconnect With Perfectly Vertical Coupling Optical

Interface

Author(s): Zhang, ZY (Zhang, Zanyun); Huang, BJ (Huang, Beiju); Zhang, Z (Zhang, Zan); Cheng, CT

(Cheng, Chuantong); Chen, HD (Chen, Hongda)





Abstract: We proposed and demonstrated a point-to-point photonic interconnect based on a perfectly vertical grating coupler. This bidirectional grating plays double roles of coupling and splitting at the optical input. Based on such a configuration, an electrooptical (E-O) modulator and photonic interconnect were demonstrated. To characterize the photonic interconnect, both the E-O modulator and germanium waveguide photodetector were measured. Finally, an eye diagram test was carried out to study the dynamic performance of the photonic link. The results show that the maximum operation speed is 4 Gb/s.

Addresses: [Zhang, Zanyun; Huang, Beiju; Zhang, Zan; Cheng, Chuantong; Chen, Hongda] Chinese


Reprint Address: Huang, BJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: bjhuang@semi.ac.cn

ISSN: 1943-0655

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Record 88 of 495

Title: Single Phase Modulator for Binary Phase-Coded Microwave Signals Generation

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Li, M (Li, Ming); Zhu, NH (Zhu, Ning Hua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 19 Pages: 1867-1870

DOI: 10.1109/LPT.2013.2278277 Published: OCT 1 2013



Abstract: We report a new approach to photonic generation of binary phase-coded microwave signals based on the asymmetric phase modulation indexes of a phase modulator in the TE and TM polarization states. The proposed system is extremely simplified compared with any other techniques reported in the previous literature since we only use one phase modulator. The microwave carrier frequency is widely tunable, and the p phase shift of the microwave signal is independent of the amplitude of the electrical driving signal. The proposed technique is theoretically analyzed and experimentally verified at carrier frequencies of 10 and 25 GHz, respectively.

Addresses: [Li, Wei; Wang, Li Xian; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, State Key


Reprint Address: Li, W (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: liwei05@semi.ac.cn; lxwang@semi.ac.cn; ml@semi.ac.cn; nhzhu@semi.ac.cn

ISSN: 1041-1135

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Record 89 of 495

Title: Photonic MMW-UWB Signal Generation via DPMZM-Based Frequency Up-Conversion

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Zheng, JY (Zheng, Jian Yu); Li, M (Li, Ming); Zhu,

NH (Zhu, Ning Hua)


DOI: 10.1109/LPT.2013.2278867 Published: OCT 1 2013



Abstract: We propose a photonic technique for millimeter-wave ultra-wideband (MMW-UWB) signal generation via direct frequency up-conversion using a dual-parallel Mach-Zehnder modulator (DPMZM).

By properly setting the dc bias voltages of the DPMZM, the baseband UWB pulse is up-converted to the

MMW band without pulse distortion. In addition, the excessive residual local oscillator component is perfectly suppressed. The electrical spectrum of the up-converted UWB signal satisfies the Federal

Communications Commission spectral mask very well.

Addresses: [Li, Wei; Wang, Li Xian; Zheng, Jian Yu; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, Inst


Reprint Address: Li, W (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: liwei05@semi.ac.cn; lxwang@semi.ac.cn; jyzheng@semi.ac.cn; ml@semi.ac.cn; nhzhu@semi.ac.cn

ISSN: 1041-1135

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Record 90 of 495

Title: Number-resolved master equation approach to quantum transport under the self-consistent Born approximation

Author(s): Liu, Y (Liu Yu); Jin, JS (Jin JinShuang); Li, J (Li Jun); Li, XQ (Li XinQi); Yan, YJ (Yan YiJing)

Source: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY Volume: 56 Issue: 10 Pages:

1866-1873 DOI: 10.1007/s11433-013-5238-7 Published: OCT 2013



Abstract: We construct a particle-number (n)-resolved master equation (ME) approach under the self-consistent Born approximation (SCBA) for quantum transport through mesoscopic systems. The formulation is essentially non-Markovian and incorporates the interplay of the multi-tunneling processes and many-body correlations. The proposed n-SCBA-ME goes beyond the scope of the Born-Markov master equation, being applicable to transport under small bias voltage, in non-Markovian regime and with strong Coulomb correlations. For steady state, it can recover not only the exact result of noninteracting transport under arbitrary voltages, but also the challenging nonequilibrium Kondo effect.

Moreover, the n-SCBA-ME approach is efficient for the study of shot noise. We demonstrate the application by a couple of representative examples, including particularly the nonequilibrium Kondo system.

Addresses: [Liu Yu; Li XinQi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


[Jin JinShuang] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China.

[Li Jun] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

[Li XinQi] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.

[Yan YiJing] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China.

Reprint Address: Jin, JS (reprint author), Hangzhou Normal Univ, Dept Phys, Hangzhou 310036,

Zhejiang, Peoples R China.

E-mail Addresses: jsjin@hznu.edu.cn; lixinqi@bnu.edu.cn

ISSN: 1674-7348

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Record 91 of 495

Title: Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

Author(s): Wu, LL (Wu, L. L.); Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Chen, P (Chen, P.); Le,

LC (Le, L. C.); Li, L (Li, L.); Liu, ZS (Liu, Z. S.); Zhang, SM (Zhang, S. M.); Zhu, JJ (Zhu, J. J.); Wang, H

(Wang, H.); Zhang, BS (Zhang, B. S.); Yang, H (Yang, H.)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 28 Issue: 10 Article Number:

105020 DOI: 10.1088/0268-1242/28/10/105020 Published: OCT 2013



Abstract: The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 degrees C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at

850 degrees C exhibits the best ohmic contact properties with respect to the specific contact resistivity

(rho(c)). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer.

Addresses: [Wu, L. L.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Le, L. C.; Li, L.; Liu, Z. S.] Chinese Acad Sci,


[Zhang, S. M.; Zhu, J. J.; Wang, H.; Zhang, B. S.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech &

Nanobion, Suzhou 215125, Peoples R China.

Reprint Address: Wu, LL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 0268-1242

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Record 92 of 495

Title: Doping and electrical properties of cubic boron nitride thin films: A critical review

Author(s): Zhang, XW (Zhang, X. W.)

Source: THIN SOLID FILMS Volume: 544 Pages: 2-12 DOI: 10.1016/j.tsf.2013.07.001 Published:

OCT 1 2013



Abstract: Cubic boron nitride (c-BN) is a promising material for high-power and high-temperature electronic devices operating in harsh environments due to its outstanding properties including a wide band-gap, good chemical stability, high thermal conductivity, and high breakdown field. The electronic applications of c-BN have received considerable attention, benefiting from the progress in c-BN thin film deposition techniques during the last few years. The present article reviews the latest developments in doping and electrical properties of c-BN thin films. Following a brief introduction on film growth, we present calculated theoretical results on electronic structure as well as the energies of native defects and impurity dopants in c-BN. In recent experimental research, several dopants, including Be, Mg, Zn, S, and

Si, have been incorporated into c-BN thin films during deposition or by post ion implantation, resulting in both n- and p-type conduction. These results are summarized and discussed in Section 3. In addition, results on c-BN/metal-contacts and p-n junctions based on intrinsic or doped c-BN thin films are discussed in Section 4. Finally, current status and future prospects for doping and electrical properties of c-BN thin films are discussed. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.



E-mail Addresses: xwzhang@semi.ac.cn

ISSN: 0040-6090

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Record 93 of 495

Title: Structural, morphological and magnetic properties of AlGaN thin films co-implanted with Cr and Sm ions

Author(s): Gao, XG (Gao, Xingguo); Liu, C (Liu, Chao); Yin, CH (Yin, Chunhai); Sun, LL (Sun, Lili); Tao,

DY (Tao, Dongyan); Yang, C (Yang, Cheng); Man, BY (Man, Baoyuan)

Source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS Volume: 343 Pages: 65-68

DOI: 10.1016/j.jmmm.2013.04.072 Published: OCT 2013



Abstract: Cr and Sm co-implanted AlGaN (AlGaN:Cr:Sm) films have been fabricated by metal organic chemical vapor deposition, ion implantation and annealing. No secondary phase and metal-related peak

can be detected within the detection limit of X-ray diffraction measurement. The Raman analysis demonstrated that the peak of E-2 (H) phonon mode of sample B is much more narrow and sharp than that of sample A. The atomic force microscopy measurements indicated that the root mean square roughness for sample A and sample B were 2.26 and 1.07 nm, respectively. According to superconducting quantum interference device analysis, the AlGaN:Cr:Sm films exhibit room-temperature ferromagnetism and colossal magnetic moment effect. Moreover, the saturation magnetization of sample

B is 9.75 mu(B)/atom, which is much higher than that of sample A (1.86 mu(B)/atom). Finally, the possible origin of the room-temperature ferromagnetism in AlGaN:Cr:Sm films was discussed. (C) 2013 Elsevier

B.V. All rights reserved.

Addresses: [Gao, Xingguo] Shandong Polytech Univ, Sch Sci, Jinan 250353, Peoples R China.

[Gao, Xingguo; Yang, Cheng; Man, Baoyuan] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014,

Peoples R China.

[Liu, Chao; Yin, Chunhai; Sun, Lili; Tao, Dongyan] Chinese Acad Sci, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: cliu@semi.ac.cn; byman@sdnu.edu.cn

ISSN: 0304-8853

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Record 94 of 495

Title: Environmentally stable/self-powered ultraviolet photodetectors with high sensitivity

Author(s): Yang, SX (Yang, Shengxue); Tongay, S (Tongay, Sefaattin); Li, SS (Li, Shu-Shen); Xia, JB (Xia,

Jian-Bai); Wu, JQ (Wu, Junqiao); Li, JB (Li, Jingbo)


10.1063/1.4824204 Published: SEP 30 2013



Abstract: Here, we demonstrate self-powered ultraviolet photodetectors that are capable of generating opposite current flow when illuminated at different wavelengths. The photodetectors are composed of n-ZnO/Polyaniline (PANI) p-n and PANI/ZnGa2O4 type-II heterojunctions and operate without any need for external power source. Devices display superior stability in ambient conditions within months. Results provide opportunities for developing devices for optical recognition. (C) 2013 AIP Publishing LLC.

Addresses: [Yang, Shengxue; Tongay, Sefaattin; Li, Shu-Shen; Xia, Jian-Bai; Wu, Junqiao; Li, Jingbo]

Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R

China.


Reprint Address: Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &



ISSN: 0003-6951

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Record 95 of 495

Title: A novel humidity sensor based on NH2-MIL-125(Ti) metal organic framework with high responsiveness

Author(s): Zhang, Y (Zhang, Ying); Chen, Y (Chen, Yu); Zhang, YP (Zhang, Yupeng); Cong, HH (Cong,

Huahua); Fu, B (Fu, Bo); Wen, SP (Wen, Shanpeng); Ruan, SP (Ruan, Shengping)


10.1007/s11051-013-2014-6 Published: SEP 29 2013



Abstract: A novel porous nanosized humidity-sensing material of amine-functionalized titanium metal organic framework (MOF), NH2-MIL-125(Ti), was investigated. NH2-MIL-125(Ti) nanoparticles with high phase purity and good physicochemical property were synthesized by a simple hydrothermal method.

The nanosized MOF was characterized by X-ray diffraction and scanning electron microscope. The average size of the MOF nanoparticles is around 300 nm. Then NH2-MIL-125(Ti) humidity sensor was fabricated by coating the nanosized materials on interdigitated electrodes. The humidity sensor based on

NH2-MIL-125(Ti) shows good linearity of RH (11-95 % RH), as well as fast response and recovery time.

The RH detecting range is from 11 to 95 % RH at 100 Hz. The response and recovery time are about 45 and 50 s, respectively. Moreover, the sensing mechanism was discussed by complex impedance analysis in detail. These results indicate the potential application of NH2-MIL-125(Ti) in humidity sensors.

Addresses: [Zhang, Ying; Zhang, Yupeng; Cong, Huahua; Ruan, Shengping] Jilin Univ, State Key Lab

Integrated Optoelect, Changchun 130012, Peoples R China.


[Fu, Bo; Wen, Shanpeng] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.

Reprint Address: Ruan, SP (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Changchun


E-mail Addresses: sp_wen@jlu.edu.cn; maheping609@gmail.com

ISSN: 1388-0764

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Record 96 of 495

Title: Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors

Author(s): Ma, LH (Ma, Liuhong); Han, WH (Han, Weihua); Wang, H (Wang, Hao); Li, XM (Li, Xiaoming);

Yang, FH (Yang, Fuhua)


10.1063/1.4822318 Published: SEP 28 2013



Abstract: The electronic behaviors in the n-type multiple-channel junctionless nanowire transistors are investigated in the thermal range from 10K to 300K. At low temperatures (T < 100K), oscillation current spikes are clearly observed below flatband voltage and attributed to resonant tunneling through donor-induced quantum dot array. There is a minimum value at the critical temperature of 15K for the drain currents and the electron mobility. The electron mobility increases rapidly above 15K because of the thermal activation of ionized electrons. The temperature-dependent background trapping at the interface of silicon and silicon dioxide is evaluated by an Arrhenius-type off-state current with the activation energy of approximately 49meV. As temperatures increasing, the negative shift of the threshold voltage with the slope of 4.0mV K-1 is given predominantly by the thermal activation of traps. (C) 2013

AIP Publishing LLC.

Addresses: [Ma, Liuhong; Han, Weihua; Wang, Hao; Li, Xiaoming; Yang, Fuhua] Chinese Acad Sci, Inst

Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

Reprint Address: Ma, LH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond

Integrat Technol, Beijing 100083, Peoples R China.

E-mail Addresses: weihua@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 0021-8979

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Record 97 of 495

Title: Hydrogen storage by metalized silicene and silicane

Author(s): Wang, J (Wang, Jing); Li, JB (Li, Jingbo); Li, SS (Li, Shu-Shen); Liu, Y (Liu, Ying)


10.1063/1.4823738 Published: SEP 28 2013



Abstract: The hydrogen storage capacities of K-decorated silicene and silicane are studied using first-principles calculations. It is found that K atoms can form a uniform and stable coverage on one side of silicene and both sides of silicane. Each K atom can absorb a maximum of five H-2 molecules and the hydrogen storage capacity of K-decorated silicane can reach 6.13wt. % with an average adsorption energy of 0.133 eV/H-2. This hydrogen storage capacity is in excess of 6wt. %, the U. S. Department of

Energy target. This is a remarkable result indicating another application of silicene/silicane as a potential high-capacity storage medium. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, Jing; Liu, Ying] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Peoples R

China.

[Wang, Jing; Liu, Ying] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Peoples R

China.

[Li, Jingbo; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,


Reprint Address: Wang, J (reprint author), Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Peoples

R China.

E-mail Addresses: yliu@hebtu.edu.cn

ISSN: 0021-8979

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Record 98 of 495

Title: Electron delocalization in gate-tunable gapless silicene

Author(s): Zhang, YY (Zhang, Yan-Yang); Tsai, WF (Tsai, Wei-Feng); Chang, K (Chang, Kai); An, XT (An,

X. -T.); Zhang, GP (Zhang, G. -P.); Xie, XC (Xie, X. -C.); Li, SS (Li, Shu-Shen)


10.1103/PhysRevB.88.125431 Published: SEP 26 2013



Abstract: The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since intervalley scattering from nonmagnetic impurities is highly suppressed by time-reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is nonmagnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities.

Addresses: [Zhang, Yan-Yang; Chang, Kai; An, X. -T.; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond,

SKLSM, Beijing 100083, Peoples R China.

[Zhang, Yan-Yang; Xie, X. -C.] Peking Univ, ICQM, Beijing 100871, Peoples R China.

[Tsai, Wei-Feng] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.

[Zhang, G. -P.] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China.

Reprint Address: Tsai, WF (reprint author), Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.

E-mail Addresses: wftsai@mail.nsysu.edu.tw

ISSN: 1098-0121

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Record 99 of 495

Title: Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures

Author(s): Wang, KF (Wang, Ke-Fan); Qu, SC (Qu, Shengchun); Liu, DW (Liu, Dewei); Liu, K (Liu, Kong);

Wang, J (Wang, Jian); Zhao, L (Zhao, Li); Zhu, HL (Zhu, Hongliang); Wang, ZG (Wang, Zhanguo)

Source: MATERIALS LETTERS Volume: 107 Pages: 50-52 DOI: 10.1016/j.matlet.2013.05.123

Published: SEP 15 2013



Abstract: Sulfur hyperdoped silicon was usually prepared by sulfur ion implantation and nanosecond laser annealing. It has a smooth surface and a low sub-band-gap absorption of 30%. Here we report that the surface of silicon wafer was chemically textured before it was treated by the above two processes, which greatly enhanced the light absorption of the hyperdoped silicon from 30% to 70% in sub-band-gap wavelength and from 65% to 80% in visible wavelength for the antireflection characteristics of the formed dome structures. Consequently, the surface texture process will be a necessary step for device development that is based on sulfur hyperdoped silicon materials. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Wang, Ke-Fan] Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect, Kaifeng 475004,

Peoples R China.

[Wang, Ke-Fan; Qu, Shengchun; Liu, Kong; Zhu, Hongliang; Wang, Zhanguo] Chinese Acad Sci, Inst


[Liu, Dewei] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China.

[Wang, Jian; Zhao, Li] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.

Reprint Address: Wang, KF (reprint author), Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect,

Kaifeng 475004, Peoples R China.

E-mail Addresses: kfwang@henu.edu.cn

ISSN: 0167-577X

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Record 100 of 495

Title: First-principles study of electronic and magnetic properties of FeCl3-based graphite intercalation compounds

Author(s): Li, Y (Li, Yan); Yue, Q (Yue, Qu)

Source: PHYSICA B-CONDENSED MATTER Volume: 425 Pages: 72-77 DOI:

10.1016/j.physb.2013.05.030 Published: SEP 15 2013



Abstract: The structural, electronic and magnetic properties of stage-1 and -2 FeCl3-based graphite intercalation compounds (GICs) are studied in the framework of the GGA+U implementation of density functional theory. The intercalation process extends the c-axis remarkably and modulates the band structure of graphite to p-type doped. A linearly dispersing band structure is observed for stage-1 GIC.

The carrier density shows a weak descending tendency from stage-1 GIC to stage-2 GIC. The dependence of the energy level positions of Fe 3d orbitals on parameter U is strong. With the increase of

U, the spin-up states move to the deeper energy levels, while the spin-down states move to the shallower energy levels. Stage-1 GIC has antiferromagnetic (AFM) order and stage-2 GICs has ferromagnetic (FM) orders at the ground states, and two combinative effects are proposed to explain the origin of the magnetic transformation from stage-1 GIC to stage-2 GIC. (c) 2013 Elsevier B.V. All rights reserved.

Addresses: [Li, Yan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing



Reprint Address: Li, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


E-mail Addresses: bclly2008@semi.ac.cn

ISSN: 0921-4526

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Record 101 of 495

Title: Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Author(s): Tongay, S (Tongay, Sefaattin); Suh, J (Suh, Joonki); Ataca, C (Ataca, Can); Fan, W (Fan, Wen);

Luce, A (Luce, Alexander); Kang, JS (Kang, Jeong Seuk); Liu, J (Liu, Jonathan); Ko, C (Ko, Changhyun);

Raghunathanan, R (Raghunathanan, Rajamani); Zhou, J (Zhou, Jian); Ogletree, F (Ogletree, Frank); Li,

JB (Li, Jingbo); Grossman, JC (Grossman, Jeffrey C.); Wu, JQ (Wu, Junqiao)





Abstract: Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by alpha-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering.

Addresses: [Tongay, Sefaattin; Suh, Joonki; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu,

Jonathan; Ko, Changhyun; Zhou, Jian; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley,

CA 94720 USA.

[Tongay, Sefaattin; Suh, Joonki; Li, Jingbo; Wu, Junqiao] Chinese Acad Sci, Inst Semicond, Beijing


[Ataca, Can; Raghunathanan, Rajamani; Grossman, Jeffrey C.] MIT, Dept Mat Sci & Engn, Cambridge,

MA 02139 USA.

[Luce, Alexander; Ogletree, Frank; Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div

Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Wu, JQ (reprint author), Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720

USA.

E-mail Addresses: wuj@berkeley.edu

ISSN: 2045-2322

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Record 102 of 495

Title: Modulation of Fermi velocities of Dirac electrons in single layer graphene by moire superlattice

Author(s): Zou, Q (Zou, Q.); Belle, BD (Belle, B. D.); Zhang, LZ (Zhang, L. Z.); Xiao, WD (Xiao, W. D.);

Yang, K (Yang, K.); Liu, LW (Liu, L. W.); Wang, GQ (Wang, G. Q.); Fei, XM (Fei, X. M.); Huang, Y (Huang,

Y.); Ma, RS (Ma, R. S.); Lu, Y (Lu, Y.); Tan, PH (Tan, P. H.); Guo, HM (Guo, H. M.); Du, SX (Du, S. X.);

Gao, HJ (Gao, H. -J.)


10.1063/1.4821178 Published: SEP 9 2013



Abstract: Study of electronic properties of graphene on an anisotropic crystal substrate including boron nitride (BN) has raised significant interest recently due to the application of graphene based vertical hetero-devices. We have performed scanning tunneling microscopy (STM) and scanning tunneling spectroscopy studies of single-layer graphene on hexagonal BN (h-BN) substrates with an applied perpendicular magnetic field at low temperature. Different periodic moire superlattices can be resolved with STM, and their quantized Landau levels in high magnetic field are investigated. The renormalized

Fermi velocities of massless Dirac fermions in graphene are revealed to show dependent on the moire superlattice. Density functional theory calculation verifies that the interlayer interaction between graphene and h-BN is stronger with smaller twisting angle between lattices of graphene and h-BN, thus, leading to a reduction in the velocity of charge carriers. Our results should provide valuable insight of electronic properties and device performance of graphene on crystal substrates. (C) 2013 AIP Publishing

LLC.

Addresses: [Zou, Q.; Zhang, L. Z.; Xiao, W. D.; Yang, K.; Liu, L. W.; Wang, G. Q.; Fei, X. M.; Huang, Y.;

Ma, R. S.; Guo, H. M.; Du, S. X.; Gao, H. -J.] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R

China.

[Belle, B. D.] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England.

[Lu, Y.; Tan, P. H.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zou, Q (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.

E-mail Addresses: hmguo@iphy.ac.cn; hjgao@iphy.ac.cn

ISSN: 0003-6951

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Record 103 of 495

Title: Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2

Author(s): Zhu, CR (Zhu, C. R.); Wang, G (Wang, G.); Liu, BL (Liu, B. L.); Marie, X (Marie, X.); Qiao, XF

(Qiao, X. F.); Zhang, X (Zhang, X.); Wu, XX (Wu, X. X.); Fan, H (Fan, H.); Tan, PH (Tan, P. H.); Amand, T

(Amand, T.); Urbaszek, B (Urbaszek, B.)


10.1103/PhysRevB.88.121301 Published: SEP 9 2013



Abstract: We use micro-Raman and photoluminescence (PL) spectroscopy at 300 K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially degenerate E' monolayer Raman mode is split into a doublet as a direct consequence of the strain applied to MoS2 through Van der Waals coupling at the sample-substrate interface. We observe a strong shift of the direct band gap of 48 meV/(% of strain) for the monolayer and 46 meV/% for the bilayer, whose indirect gap shifts by 86 meV/%. We find a strong

decrease of the PL polarization linked to optical valley initialization for both monolayer and bilayer samples, indicating that scattering to the spin-degenerate Gamma valley plays a key role.

Addresses: [Zhu, C. R.; Wang, G.; Liu, B. L.; Wu, X. X.; Fan, H.] Chinese Acad Sci, Beijing Natl Lab

Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.

[Marie, X.; Amand, T.; Urbaszek, B.] Univ Toulouse, INSA CNRS UPS, LPCNO, F-31077 Toulouse,

France.

[Qiao, X. F.; Zhang, X.; Tan, P. H.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


Reprint Address: Zhu, CR (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys,

Inst Phys, Beijing 100190, Peoples R China.

E-mail Addresses: blliu@iphy.ac.cn; urbaszek@insa-toulouse.fr

ISSN: 1098-0121

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Record 104 of 495

Title: Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots

Author(s): Li, ZC (Li, Z. C.); Liu, JP (Liu, J. P.); Feng, MX (Feng, M. X.); Zhou, K (Zhou, K.); Zhang, SM

(Zhang, S. M.); Wang, H (Wang, H.); Li, DY (Li, D. Y.); Zhang, LQ (Zhang, L. Q.); Sun, Q (Sun, Q.); Jiang,

DS (Jiang, D. S.); Wang, HB (Wang, H. B.); Yang, H (Yang, H.)


10.1063/1.4820935 Published: SEP 7 2013



Abstract: Self-organized InGaN quantum dots (QDs) with emission wavelength from green to red range have been grown on GaN templated c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of matrix layer composition on the structural and optical properties of

InGaN QDs have been investigated. A continued growth of QDs is observed during the growth of

In0.1Ga0.9N matrix layer, which results in an increase of the QDs' size. By using In0.1Ga0.9N matrix layer instead of GaN one, the annealing induced blue-shift in emission energy of the InGaN QDs can be suppressed. After the growth of top GaN cap layer, a larger red-shift caused by the quantum confined

Stark effect is observed in the sample with In0.1Ga0.9N matrix layer. Employing this method, InGaN QD sample emitting at 615 nm with an internal quantum efficiency of 24.3% has been grown. The significance of this method is that it allows a higher growth temperature of InGaN QDs with emission wavelength in the green range to improve the crystalline quality, which is beneficial to enhance the efficiency of green InGaN QD light-emitting-diodes and laser diodes. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Z. C.; Feng, M. X.; Zhou, K.; Jiang, D. S.; Yang, H.] Chinese Acad Sci, Inst Semicond,


[Li, Z. C.; Liu, J. P.; Feng, M. X.; Zhou, K.; Zhang, S. M.; Wang, H.; Li, D. Y.; Zhang, L. Q.; Sun, Q.; Wang,

H. B.] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Li, Z. C.; Liu, J. P.; Feng, M. X.; Zhou, K.; Zhang, S. M.; Wang, H.; Li, D. Y.; Zhang, L. Q.; Sun, Q.; Wang,

H. B.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R

China.

Reprint Address: Liu, JP (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou



ISSN: 0021-8979

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Record 105 of 495

Title: Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

Author(s): Zhang, YM (Zhang, Yamin); Feng, SW (Feng, Shiwei); Zhu, H (Zhu, Hui); Zhang, GC (Zhang,

Guangchen); Deng, B (Deng, Bing); Ma, L (Ma, Lin)


10.1063/1.4820763 Published: SEP 7 2013



Abstract: The forward Schottky characteristic method, utilizing the temperature dependence of forward gate-source Schottky junction voltage, has been used to measure the transient temperature rise under

DC and cycle pulse for multi-finger AlGaN/GaN high electron mobility transistor. The effect of electrical pulse on channel temperature has been studied. The transient temperature rise of channel under pulses with different duty cycles and frequencies are determined, respectively. The measurement results show that operation under high frequency and/or low duty cycle can improve the lifetime and performance reliability of AlGaN/GaN HEMT devices effectively. Furthermore, the measurement results are found to be consistent with the electro-thermal simulation results performed for the device. (C) 2013 AIP

Publishing LLC.

Addresses: [Zhang, Yamin; Feng, Shiwei; Zhu, Hui; Zhang, Guangchen; Deng, Bing; Ma, Lin] Beijing

Univ Technol, Coll Elect Informat & Control Engn, Inst Semicond Device Reliabil Phys, Beijing 100124,

Peoples R China.

Reprint Address: Zhang, YM (reprint author), Beijing Univ Technol, Coll Elect Informat & Control Engn,

Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China.

E-mail Addresses: shwfeng@bjut.edu.cn

ISSN: 0021-8979

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Record 106 of 495

Title: Boron Nitride Nanopores: Highly Sensitive DNA Single-Molecule Detectors

Author(s): Liu, S (Liu, Song); Lu, B (Lu, Bo); Zhao, Q (Zhao, Qing); Li, J (Li, Ji); Gao, T (Gao, Teng); Chen,

YB (Chen, Yubin); Zhang, YF (Zhang, Yanfeng); Liu, ZF (Liu, Zhongfan); Fan, ZC (Fan, Zhongchao);

Yang, FH (Yang, Fuhua); You, LP (You, Liping); Yu, DP (Yu, Dapeng)

Source: ADVANCED MATERIALS Volume: 25 Issue: 33 Pages: 4549-4554 DOI:

10.1002/adma.201301336 Published: SEP 6 2013



Addresses: [Liu, Song; Lu, Bo; Zhao, Qing; Li, Ji; You, Liping; Yu, Dapeng] Peking Univ, Sch Phys, State

Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.

[Liu, Song; Lu, Bo; Zhao, Qing; Li, Ji; You, Liping; Yu, Dapeng] Peking Univ, Sch Phys, Electron

Microscopy Lab, Beijing 100871, Peoples R China.

[Gao, Teng; Chen, Yubin; Zhang, Yanfeng; Liu, Zhongfan] Peking Univ, Coll Chem & Mol Engn, State Key

Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, Beijing 100871,

Peoples R China.

[Zhang, Yanfeng] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China.

[Fan, Zhongchao; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct,


Reprint Address: Zhao, Q (reprint author), Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing


E-mail Addresses: zhaoqing@pku.edu.cn; yudp@pku.edu.cn

ISSN: 0935-9648

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Record 107 of 495

Title: Controllable synthesis of ZnO nanostructures on the Si substrate by a hydrothermal route

Author(s): Dong, JJ (Dong, Jing-Jing); Zhen, CY (Zhen, Chun-Yang); Hao, HY (Hao, Hui-Ying); Xing, J

(Xing, Jie); Zhang, ZL (Zhang, Zi-Li); Zheng, ZY (Zheng, Zhi-Yuan); Zhang, XW (Zhang, Xing-Wang)


10.1186/1556-276X-8-378 Published: SEP 5 2013



Abstract: In this paper, controllable synthesis of various ZnO nanostructures was achieved via a simple and cost-effective hydrothermal process on the Si substrate. The morphology evolution of the ZnO nanostructures was well monitored by tuning hydrothermal growth parameters, such as the seed layer, solution concentration, reaction temperature, and surfactant. X-ray diffraction and photoluminescence measurements reveal that crystal quality and optical properties crucially depend on the morphology of the ZnO nanostructures. The ease of synthesis and convenience to tune morphology and optical properties bring this approach great potential for nanoscale applications.

Addresses: [Dong, Jing-Jing; Zhen, Chun-Yang; Hao, Hui-Ying; Xing, Jie; Zhang, Zi-Li; Zheng, Zhi-Yuan]

China Univ Geosci, Sch Sci, Beijing 100083, Peoples R China.

[Zhang, Xing-Wang] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

Reprint Address: Dong, JJ (reprint author), China Univ Geosci, Sch Sci, Beijing 100083, Peoples R

China.

E-mail Addresses: jjdong@cugb.edu.cn; zcy19920609@foxmail.com; huiyinghaol@cugb.edu.cn; xingjie@cugb.edu.cn; zlzhang@cugb.edu.cn; zhyzheng@cugb.edu.cn; xwzhang@semi.ac.cn

ISSN: 1931-7573

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Record 108 of 495

Title: A 1319 nm diode-side-pumped Nd:YAG laser Q-switched with graphene oxide

Author(s): Zhang, L (Zhang, Ling); Yu, HJ (Yu, Haijuan); Yan, SL (Yan, Shilian); Zhao, WF (Zhao,

Weifang); Sun, W (Sun, Wei); Yang, YY (Yang, Yingying); Wang, LR (Wang, Lirong); Hou, W (Hou, Wei);

Lin, XC (Lin, Xuechun); Wang, YG (Wang, Yonggang); Wang, YS (Wang, Yishan)

Source: JOURNAL OF MODERN OPTICS Volume: 60 Issue: 15 Pages: 1287-1289 DOI:

10.1080/09500340.2013.837975 Published: SEP 1 2013



Abstract: We have demonstrated a diode-side-pumped Q-switched Nd:YAG laser operating at 1319nm with a saturable absorber of graphene oxide fabricated by the vertical evaporation method. The 1319nm

Q-switched laser pulses were realized with average output power of 820 mW, pulse width of 2s and repetition rate of 35kHz. The pulse energy and peak power were 23.4J and 11.7W, respectively when the optical pump power was 232W. The experimental results indicate that graphene oxide is an effective saturable absorber for Q-switched lasers.

Addresses: [Zhang, Ling; Yu, Haijuan; Yan, Shilian; Zhao, Weifang; Sun, Wei; Yang, Yingying; Wang,

Lirong; Hou, Wei; Lin, Xuechun] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources,


[Wang, Yonggang; Wang, Yishan] Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab

Transient Opt & Photon, Xian 710119, Peoples R China.

Reprint Address: Lin, XC (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light


E-mail Addresses: chinawygxjw@opt.ac.cn; xclin@semi.ac.cn

ISSN: 0950-0340

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Record 109 of 495

Title: Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective

Volume of Active Region by Carrier Localization

Author(s): Li, HJ (Li, Hongjian); Li, PP (Li, Panpan); Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Zhang, YY

(Zhang, Yiyun); Liang, M (Liang, Meng); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Wang,

GH (Wang, Guohong)


10.7567/APEX.6.092101 Published: SEP 2013



Abstract: Carrier localization can be modeled as a parameter of reduced effective volumes of the active region within the efficiency equation to describe efficiency droop of InGaN light-emitting diodes (LEDs).

Reduced effective volume due to carrier localized in the potential minima of In-rich areas results in an increase of carrier density, which accelerates the saturation of radiative recombination as well as the loss of Auger recombination and carrier overflow. Wavelength-dependent droop can be well modeled with different reduced effective volumes of the active region. (c) 2013 The Japan Society of Applied Physics

Addresses: [Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Liang, Meng; Li, Zhicong; Li,

Jing; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting,


Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting,



ISSN: 1882-0778

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Record 110 of 495

Title: High efficiency beam combination of 4.6-mu m quantum cascade lasers

Author(s): Wu, H (Wu, Hao); Wang, LJ (Wang, Lijun); Liu, FQ (Liu, Fengqi); Peng, HY (Peng, Hangyu);

Zhang, J (Zhang, Jun); Tong, CZ (Tong, Cunzhu); Ning, YQ (Ning, Yongqiang); Wang, LJ (Wang, Lijun)

Source: CHINESE OPTICS LETTERS Volume: 11 Issue: 9 Article Number: 091401 DOI:

10.3788/COL201311.091401 Published: SEP 2013



Abstract: The quantum cascade laser (QCL), a potential laser source for mid-infrared applications, has all of the advantages of a semiconductor laser, such as small volume and light weight, and is driven by electric power. However, the optical power of a single QCL is limited by serious self-heating effects.

Therefore, beam combination technology is essential to achieve higher laser powers. In this letter, we demonstrate a simple beam combination scheme using two QCLs to extend the output peak power of the lasers to 2.3 W. A high beam combination efficiency of 89% and beam quality factor of less than 5 are also achieved.

Addresses: [Wu, Hao; Peng, Hangyu; Zhang, Jun; Tong, Cunzhu; Ning, Yongqiang; Wang, Lijun] Chinese

Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China.

[Wang, Lijun; Liu, Fengqi] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Tong, CZ (reprint author), Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys,


E-mail Addresses: tongcz@ciomp.ac.cn

ISSN: 1671-7694

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Record 111 of 495

Title: Grain boundary ferromagnetism in vanadium-doped In2O3 thin films

Author(s): Feng, Q (Feng, Qi); Blythe, HJ (Blythe, Harry J.); Fox, AM (Fox, A. Mark); Qin, XF (Qin,

Xiu-Fang); Xu, XH (Xu, Xiao-Hong); Heald, SM (Heald, Steve M.); Gehring, GA (Gehring, Gillian A.)

Source: EPL Volume: 103 Issue: 6 Article Number: 67007 DOI: 10.1209/0295-5075/103/67007

Published: SEP 2013



Abstract: Room temperature ferromagnetism was observed in In2O3 thin films doped with 5 at.% V, prepared by pulsed-laser deposition at substrate temperatures ranging from 300 to 600 degrees C. X-ray absorption fine-structure measurement indicated that V was substitutionally dissolved in the In2O3 host lattice, thus excluding the existence of secondary phases of V compounds. Magnetic measurements based on SQUID magnetometry and magnetic circular dichroism confirm that the magnetism is at grain boundaries and also in the grains. The overall magnetization originates from the competing effects between grains and grain boundaries. Copyright (C) EPLA, 2013

Addresses: [Feng, Qi; Blythe, Harry J.; Fox, A. Mark; Gehring, Gillian A.] Univ Sheffield, Dept Phys &

Astron, Sheffield S3 7RH, S Yorkshire, England.

[Qin, Xiu-Fang; Xu, Xiao-Hong] Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R

China.

[Heald, Steve M.] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA.

Reprint Address: Feng, Q (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing


E-mail Addresses: fengqi1985@gmail.com; g.gehring@sheffield.ac.uk

ISSN: 0295-5075

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Record 112 of 495

Title: Optimization of direct modulation rate for circular microlasers by adjusting mode Q factor

Author(s): Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Zou, LX (Zou, Ling-Xiu); Long, H

(Long, Heng); Du, Y (Du, Yun)

Source: LASER & PHOTONICS REVIEWS Volume: 7 Issue: 5 Pages: 818-829 DOI:

10.1002/lpor.201300036 Published: SEP 2013



Abstract: Semiconductor microcircular lasers have been investigated as potential light sources for photonic integrated circuits and optical interconnections for more than two decades. However, the direct modulation bandwidths of the circular microlasers remain a challenge, especially when being compared with other microlasers, such as photonic crystal lasers. In this paper, microcircular lasers connected to an output waveguide are investigated for high-speed direct modulation with optimized mode Q factors.

Small signal modulation with a resonance frequency of f(R) = 12.5 GHz is realized for a AlGaInAs/InP circular microlaser with a radius of 10 mu m at 290 K. Furthermore, clear eye diagrams are observed at

12.5 Gbit/s for a 15-mu m radius circular microlaser with f(R) = 6.9 GHz.

Addresses: [Lv, Xiao-Meng; Huang, Yong-Zhen; Zou, Ling-Xiu; Long, Heng; Du, Yun] Chinese Acad Sci,



Optoelect, A35 QingHua East Rd, Beijing 100083, Peoples R China.


ISSN: 1863-8880

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Record 113 of 495

Title: Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

Author(s): Wu, K (Wu, Kui); Zhang, YY (Zhang, Yiyun); Wei, TB (Wei, Tongbo); Lan, D (Lan, Ding); Sun,

B (Sun, Bo); Zheng, HY (Zheng, Haiyang); Lu, HX (Lu, Hongxi); Chen, Y (Chen, Yu); Wang, JX (Wang,

Junxi); Luo, Y (Luo, Yi); Li, JM (Li, Jinmin)

Source: AIP ADVANCES Volume: 3 Issue: 9 Article Number: 092124 DOI: 10.1063/1.4823478

Published: SEP 2013



Abstract: The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8 degrees reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these

PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Addresses: [Wu, Kui; Zhang, Yiyun; Wei, Tongbo; Sun, Bo; Zheng, Haiyang; Lu, Hongxi; Chen, Yu; Wang,

Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing


[Wu, Kui; Luo, Yi] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated

Optoelect, Dept Elect Engn, Beijing 100084, Peoples R China.

[Lan, Ding] Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China.

Reprint Address: Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


E-mail Addresses: tbwei@semi.ac.cn

ISSN: 2158-3226

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Record 114 of 495

Title: A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

Author(s): Wei, H (Wei Heng); Jin, P (Jin Peng); Luo, S (Luo Shuai); Ji, HM (Ji Hai-Ming); Yang, T (Yang

Tao); Li, XK (Li Xin-Kun); Wu, J (Wu Jian); An, Q (An Qi); Wu, YH (Wu Yan-Hua); Chen, HM (Chen

Hong-Mei); Wang, FF (Wang Fei-Fei); Wu, J (Wu Ju); Wang, ZG (Wang Zhan-Guo)


10.1088/1674-1056/22/9/094211 Published: SEP 2013



Abstract: The optical performance of a grating-coupled external cavity laser based on InAs/InP quantum dots is investigated. Continuous tuning from 1391 nm to 1468 nm is realized at an injection current of

1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.


Peoples R China.






ISSN: 1674-1056

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Record 115 of 495

Title: High power 2-mu m room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

Author(s): Xu, Y (Xu Yun); Wang, YB (Wang Yong-Bin); Zhang, Y (Zhang Yu); Song, GF (Song

Guo-Feng); Chen, LH (Chen Liang-Hui)


10.1088/1674-1056/22/9/094208 Published: SEP 2013



Abstract: A high power GaSb-based laser diode with lasing wavelength at 2 mu m was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm(2) (72 A/cm(2) per quantum well), and the slope efficiency was

0.2 W/A. The internal loss was 11 cm(-1) and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

Addresses: [Xu Yun; Wang Yong-Bin; Zhang Yu; Song Guo-Feng; Chen Liang-Hui] Chinese Acad Sci,


Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: sgf@semi.ac.cn

ISSN: 1674-1056

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Record 116 of 495

Title: Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Author(s): Yang, J (Yang Jing); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu

Zong-Shun); Chen, P (Chen Ping); Li, L (Li Liang); Wu, LL (Wu Liang-Liang); Le, LC (Le Ling-Cong); Li,

XJ (Li Xiao-Jing); He, XG (He Xiao-Guang); Wang, H (Wang Hui); Zhu, JJ (Zhu Jian-Jun); Zhang, SM

(Zhang Shu-Ming); Zhang, BS (Zhang Bao-Shun); Yang, H (Yang Hui)


10.1088/1674-1056/22/9/098801 Published: SEP 2013



Abstract: The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p-i-n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm(2) to 0.95

mA/cm(2) by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells.

Addresses: [Yang Jing; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Li Liang; Wu

Liang-Liang; Le Ling-Cong; Li Xiao-Jing; He Xiao-Guang; Yang Hui] Chinese Acad Sci, Inst Semicond,


[Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun; Yang Hui] Chinese Acad Sci, Suzhou Inst

Nanotech & Nanobion, Suzhou 215123, Peoples R China.




ISSN: 1674-1056

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Record 117 of 495

Title: High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

Author(s): Zheng, L (Zheng Liu); Zhang, F (Zhang Feng); Liu, SB (Liu Sheng-Bei); Dong, L (Dong Lin);

Liu, XF (Liu Xing-Fang); Fan, ZC (Fan Zhong-Chao); Liu, B (Liu Bin); Yan, GG (Yan Guo-Guo); Wang, L

(Wang Lei); Zhao, WS (Zhao Wan-Shun); Sun, GS (Sun Guo-Sheng); He, Z (He Zhi); Yang, FH (Yang

Fu-Hua)


10.1088/1674-1056/22/9/097302 Published: SEP 2013



Abstract: 4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m Omega.cm(2) with a total active area of

2.46 x 10(-3) cm(2). Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250 degrees C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 x 10(-5) A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

Addresses: [Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo;

Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi] Chinese Acad Sci, Inst Semicond, Key Lab


[Fan Zhong-Chao; Yang Fu-Hua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated

Technol, Beijing 100083, Peoples R China.




ISSN: 1674-1056

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Record 118 of 495

Title: Cavity-mode calculation of L3 photonic crystal slab using the effective index perturbation method

Author(s): Zhang, SZ (Zhang, Shizhu); Zhou, WF (Zhou, Wenfei); Ye, XL (Ye, Xiaoling); Xu, B (Xu, Bo);


Source: OPTICAL REVIEW Volume: 20 Issue: 5 Pages: 420-425 DOI:

10.1007/s10043-013-0072-8 Published: SEP 2013



Abstract: This paper mainly describes that the effective index perturbation (EIP) technique in combination with two-dimensional (2D)/three-dimensional (3D) PWE methods predicts resonant mode frequencies

and mode patterns for the L3 photonic crystal slab cavity, which substantially reduces the computation time and computer memory without losing accuracy. The simulation results show that when the perturbed effective index by matching dielectric band edge is used, the fundamental resonant mode has small calculation frequency error; however, when the effective index obtained by the standard effective index method (EIM) is used, it is appropriate for predicting higher-order resonant modes, and the micro-photoluminescence experiments verify the predictions of the theoretical model. In addition, mode profiles of the L3 cavity with both the displacement of the end-holes and the base cavity structure can also be accurately predicted. (C) 2013 The Japan Society of Applied Physics

Addresses: [Zhang, Shizhu; Zhou, Wenfei; Ye, Xiaoling; Xu, Bo; Wang, Zhanguo] Chinese Acad Sci, Inst


Reprint Address: Zhang, SZ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: shizhuz@semi.ac.cn

ISSN: 1340-6000

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Record 119 of 495

Title: Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy

Author(s): Nie, SH (Nie Shuai-Hua); Zhu, LJ (Zhu Li-Jun); Pan, D (Pan Dong); Lu, J (Lu Jun); Zhao, JH

(Zhao Jian-Hua)


10.7498/aps.62.178103 Published: SEP 2013



Abstract: Perpendicularly magnetized MnAlx thin films with different Al contents have been epitaxied on

GaAs (001) substrates by a molecular-beam epitaxy system. Crystalline quality of MnAlx films is closely related to Al content, and magnetic properties of MnAlx films are improved as crystalline quality of MnAlx fims increases. MnAl0.9 film shows the best crystalline quality and magnetic property among all samples.

So we grew MnAl0.9 films at different growth temperatures to further optimize growth conditions. With increasing temperature, the chemical order parameter increases and the full width at half maximum of the tau (002) peak decreases, which reveal the improvement of crystalline quality. Higher perpendicular magnetization, coercivity and magnetic anisotropy are found as growth temperature increases. The best crystalline quality and perpendicularly magnetized properties are found at 350 degrees C; the coercivity of 8.3 kOe, saturation magnetization of 265 emu/cm(3), M-r/M-s of 0.933 and perpendicular magnetic anisotropy constant of 7.74 Merg/cm(3) are achieved. These tunable perpendicularly magnetized properties and good compatibility associated with semiconductor materials make the noble-metal-free and rare-earth-free MnAl films attractive in the application of spintronic devices.

Addresses: [Nie Shuai-Hua; Zhu Li-Jun; Pan Dong; Lu Jun; Zhao Jian-Hua] Chinese Acad Sci, Inst

Semicond, Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Superlattices &



ISSN: 1000-3290

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Record 120 of 495

Title: The progress of silicon-based grating couplers

Author(s): Yang, BA (Yang Biao); Li, ZY (Li Zhi-Yong); Xiao, X (Xiao Xi); Anastasia, N (Anastasia,

Nemkova); Yu, JZ (Yu Jin-Zhong); Yu, YD (Yu Yu-De)


10.7498/aps.62.184214 Published: SEP 2013



Abstract: Silicon-based photonic integrated chips recently have attracted great attention and actively intervened in many applications such as optical communications, optical interconnects, and optical sensing for relevant research institutions. Photonic integrated circuits are the key block to build information infrastructures. Among of them, grating couplers play an important role in silicon photonics,

due to high efficient optical coupling on/off photonic chips. Also, they have many advantages in high density photonic packaging and on-wafer testing, such as large alignment tolerances and no requirements for wafer scribing or chip polishing. This review focuses on the principles and performances of grating couplers on silicon-on-insulator substrates. In this article, we also discuss the state-of-art and the trends in the near future, with a summary of our achievements over the last few years.

Addresses: [Yang Biao; Li Zhi-Yong; Xiao Xi; Anastasia, Nemkova; Yu Jin-Zhong; Yu Yu-De] Chinese

Acad Sci, Inst Semicond, Natl Key Lab Optoelect Integrat, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, Natl Key Lab Optoelect

Integrat, Beijing 100083, Peoples R China.


ISSN: 1000-3290

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Record 121 of 495

Title: Detection of rail corrugation based on fiber laser accelerometers

Author(s): Huang, WZ (Huang, Wenzhu); Zhang, WT (Zhang, Wentao); Du, YL (Du, Yanliang); Sun, BC

(Sun, Baochen); Ma, HX (Ma, Huaixiang); Li, F (Li, Fang)

Source: MEASUREMENT SCIENCE & TECHNOLOGY Volume: 24 Issue: 9 Article Number:

094014 DOI: 10.1088/0957-0233/24/9/094014 Published: SEP 2013



Abstract: Efficient inspection methods are necessary for detection of rail corrugation to improve the safety and ride quality of railway operations. This paper presents a novel fiber optic technology for detection of rail corrugation based on fiber laser accelerometers (FLAs), tailored to the measurement of surface damage on rail structures. The principle of detection of rail corrugation using double integration of axle-box acceleration is presented. Then we present the theoretical model and test results of FLAs which are installed on the bogie to detect the vertical axle-box acceleration of the train. Characteristics of high sensitivity and large dynamic range are achieved when using fiber optic interferometric demodulation. A flexible inertial algorithm based on double integration and the wavelet denoising method is proposed to accurately estimate the rail corrugation. A field test is carried out on the

Datong-Qinhuangdao Railway in north China. The test results are compared with the results of a rail inspection car, which shows that the fiber laser sensing system has a good performance in monitoring rail corrugation.

Addresses: [Huang, Wenzhu; Zhang, Wentao; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect

Syst Lab, Beijing 100083, Peoples R China.

[Huang, Wenzhu; Ma, Huaixiang] Shijiazhuang Tiedao Univ, Sch Mech Engn, Shijiazhuang 050043,

Peoples R China.

[Du, Yanliang; Sun, Baochen] Shijiazhuang Tiedao Univ, Key Lab Struct Hlth Monitoring & Control Hebei

Pr, Shijiazhuang 050043, Peoples R China.

Reprint Address: Huang, WZ (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,



ISSN: 0957-0233

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Record 122 of 495

Title: Characterization of Obtuse Triangular Defects on 4H-SiC 4 degrees off-Axis Epitaxial Wafers

Author(s): Dong, L (Dong Lin); Sun, GS (Sun Guo-Sheng); Yu, J (Yu Jun); Zheng, L (Zheng Liu); Liu, XF

(Liu Xing-Fang); Zhang, F (Zhang Feng); Yan, GG (Yan Guo-Guo); Li, XG (Li Xi-Guang); Wang, ZG

(Wang Zhan-Guo); Yang, F (Yang Fei)


10.1088/0256-307X/30/9/096105 Published: SEP 2013



Abstract: We investigate the triangular defects with different structural features on 4H-SiC epilayers by a

Nomarski microscope, a Candela optical surface analyzer and ultraviolet photoluminescence (UV-PL) imaging. Both the foreign particles and the substrate scratches can cause the formation of the obtuse triangular defects. The central area of some obtuse triangular defects can have the spatially confined

core, in which the in-grown stacking faults can be observed under the UV-PL imaging. In contrast, the obtuse triangular defects induced by the scratches appear in the form of band-like defects, of which the width depends on the scratch direction and reaches the maximum when the scratch direction is parallel to the step flow direction. The formation mechanisms of these obtuse triangular defects are discussed.

Addresses: [Dong Lin; Sun Guo-Sheng; Zheng Liu; Liu Xing-Fang; Zhang Feng; Yan Guo-Guo; Wang

Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Sun Guo-Sheng; Yu Jun; Li Xi-Guang] Dongguan Tianyu Semicond Inc, Dongguan 523000, South

Korea.

[Yang Fei] State Grid Smart Grid Res Inst, Beijing 100192, Peoples R China.

Reprint Address: Dong, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: donglin09@semi.ac.cn

ISSN: 0256-307X

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Record 123 of 495

Title: Strain Distributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

Author(s): Zhao, GJ (Zhao Gui-Juan); Yang, SY (Yang Shao-Yan); Liu, GP (Liu Gui-Peng); Liu, CB (Liu

Chang-Bo); Sang, L (Sang Ling); Gu, CY (Gu Cheng-Yan); Liu, XL (Liu Xiang-Lin); Wei, HY (Wei

Hong-Yuan); Zhu, QS (Zhu Qin-Sheng); Wang, ZG (Wang Zhan-Guo)


10.1088/0256-307X/30/9/098102 Published: SEP 2013



Abstract: By using x-ray diffraction analysis, we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane InxGa1-xN thin films grown on r-sapphire substrates by metalorganic chemical vapour deposition. The results of the inplane grazing incidence diffraction technique are analyzed and compared with a complementary out-of-plane high resolution x-ray diffraction technique. When the indium composition is low, the a-plane InxGa1-xN layer is tensile strain in the growth direction (a-axis) and compressive strain in the two in-plane directions (m-axis and c-axis).

The strain status becomes contrary when the indium composition is high. The stress in the m-axis direction sigma(yy) is larger than that in the c-axis direction sigma(zz). Furthermore, strain in the two in-plane directions decrease and the crystal quality becomes better with the growing of the InxGa1-xN film.

Addresses: [Zhao Gui-Juan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing




Reprint Address: Zhao, GJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: gjzhao@semi.ac.cn; sh-yyang@red.semi.ac.cn

ISSN: 0256-307X

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Record 124 of 495

Title: Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage

Spectroscopy

Author(s): Li, H (Li, Hao); Zeng, XB (Zeng, Xiangbo); Yang, P (Yang, Ping); Zhang, XD (Zhang,

Xiaodong); Xie, XB (Xie, Xiaobing); Li, JY (Li, Jingyan); Wang, QM (Wang, Qiming)


10.1109/LED.2013.2273171 Published: SEP 2013



Abstract: The interface state level at amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions is identified with surface photovoltage spectroscopy (SPS). A positive slope alteration of SPS in 1.2 eV indicates there is a primarily empty state at Ev(c-Si) + 0.75 eV. Using hydrogen plasma treatment (HPT)

on c-Si surface, we observed a systematic variation in the SPS signal upon HPT time, which was associated to the change of interface state density. Our results show that the SPS can be used to optimize the heterojunction with intrinsic thin-layer solar cell preparation process.

Addresses: [Li, Hao; Zeng, Xiangbo; Yang, Ping; Zhang, Xiaodong; Xie, Xiaobing; Li, Jingyan; Wang,

Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples

R China.

Reprint Address: Li, H (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xbzeng@semi.ac.cn

ISSN: 0741-3106

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Record 125 of 495

Title: A wafer-level Sn-rich Au-Sn intermediate bonding technique with high strength

Author(s): Fang, ZQ (Fang, Zhiqiang); Mao, X (Mao, Xu); Yang, JL (Yang, Jinling); Yang, FH (Yang,

Fuhua)

Source: JOURNAL OF MICROMECHANICS AND MICROENGINEERING Volume: 23 Issue: 9

Article Number: 095008 DOI: 10.1088/0960-1317/23/9/095008 Published: SEP 2013



Abstract: Sn-rich Au-Sn solder bonding has been systematically investigated for low temperature wafer-level hermetic packaging of high-end micro-electro-mechanical systems (MEMS) devices. The

AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the

Au-Sn system makes a major contribution to the high bonding strength. A maximum shear strength of 64

MPa and a leak rate lower than 4.9 x 10(-7) atm-cc s(-1) have been obtained for Au46Sn54 solder bonded at 310 degrees C. In addition, several routines have been used to effectively inhibit the solder overflow and preserve a good bonding strength and water resilience: producing dielectric SiO2 structures which do not wet the melting solder to the surrounding bonding region, reducing the bonding pressure, and prolonging the bonding time. This wafer level bonding technique with good hermeticity can be applied to MEMS devices requiring a low temperature package.

Addresses: [Fang, Zhiqiang; Mao, Xu; Yang, Jinling; Yang, Fuhua] Chinese Acad Sci, Inst Semicond,


[Fang, Zhiqiang; Mao, Xu; Yang, Jinling] State Key Lab Transducer Technol, Shanghai 200050, Peoples

R China.

Reprint Address: Yang, JL (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: jlyang@semi.ac.cn

ISSN: 0960-1317

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Record 126 of 495

Title: Synthesis of chalcopyrite CuIn1-xGaxSe2 alloys for photovoltaic application by a novel melting method

Author(s): Chen, T (Chen, Teng); Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Yang, J (Yang,

Jun); Liu, T (Liu, Tong)





Abstract: CuIn1-xGaxSe2 (CIGS) compounds used for the fabrication of thin-film solar cell absorber layers have been synthesized by a novel melting method which is easily controlled and practical. Based on vapor phase transport caused by the temperature gradient built, the quaternary CIGS alloy was prepared from the low-cost elementary Cu, In, Ga and Se in a closed quartz tube at 1100 degrees C for 3 h. Through various characterization methods, the as-synthesized alloy with crystal grains sized 100-150 mu m presented a desirable chemical composition and a single-phase chalcopyrite structure.

Furthermore, the CIGS absorber layer made from this material turned out to be high-quality with a correct phase and large nanocrystals, indicating great application potential of the proposed method in low-cost solar cell fabrication. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Yang, Jun; Liu, Tong] Chinese Acad Sci, Inst


[Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Yang, Jun; Liu, Tong] Beijing Key Lab Low Dimens

Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Chen, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: chenteng@semi.ac.cn

ISSN: 0167-577X

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Record 127 of 495

Title: A high average power single-stage picosecond double-clad fiber amplifier

Author(s): Sun, W (Sun, W.); Yu, HJ (Yu, H. J.); Zhang, L (Zhang, L.); Yan, SL (Yan, S. L.); Dong, ZY

(Dong, Z. Y.); Han, ZH (Han, Z. H.); Hou, W (Hou, W.); Li, JM (Li, J. M.); Lin, XC (Lin, X. C.)

Source: LASER PHYSICS Volume: 23 Issue: 9 Article Number: 095101 DOI:

10.1088/1054-660X/23/9/095101 Published: SEP 2013



Abstract: In this paper, we report 38.8 W average power output through a single-stage fiber amplifier, with emission of 1064 nm wavelength with 80 MHz repetition and 35 ps pulse width amplified from a 2.15 W

SESAM passively mode-locked Nd:YVO4 laser oscillator. The high power fiber amplification is through a coupled 60.8 W 976 nm backward unidirectional pump power into a 2 m long 30/250 mu m Yb-doped inner cladding. No obvious nonlinear effects arise in the high power output. To our knowledge this is the highest average power output with 2 m 30/250 mu m Yb-doped double-clad fiber in a single-stage picosecond fiber amplifier.

Addresses: [Sun, W.; Yu, H. J.; Zhang, L.; Yan, S. L.; Dong, Z. Y.; Han, Z. H.; Hou, W.; Li, J. M.; Lin, X. C.]

Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

Reprint Address: Sun, W (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light


E-mail Addresses: xclin@semi.ac.cn

ISSN: 1054-660X

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Record 128 of 495

Title: Photonic generation of widely tunable and background-free binary phase-coded radio-frequency pulses

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Li, M (Li, Ming); Zhu, NH (Zhu, Ning Hua)





Abstract: We present a novel photonic approach to generating widely tunable and background-free binary phase-coded radio-frequency (RF) pulses by cascading a polarization modulator (PolM) and a phase modulator (PM). The PolM is used to produce an optical carrier and two sidebands with orthogonal polarization states. The phase shift theta between the optical carrier and the sidebands is controlled by the electrical driving signal applied to the PM. For theta > pi/2 or < pi/2, the phase of the detected RF signal is 0 or pi, respectively. For theta = pi/2, there is no RF signal recovered in the photodiode (PD). In this way, binary phase-coded RF pulses can be generated, while the optical power launched to the PD keeps constant. The proposed technique is therefore background free by eliminating the baseband frequency components. Moreover, the carrier frequency of the RF pulses is widely tunable and the p phase shift of the RF signal is independent of the amplitude of the electrical driving signal. The proposed scheme is theoretically analyzed and experimentally verified. (C) 2013 Optical Society of America

Addresses: [Li, Wei; Wang, Li Xian; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, State Key Lab Integrated

Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhu, NH (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst

Semicond, Beijing 100083, Peoples R China.


ISSN: 0146-9592

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Record 129 of 495

Title: Two-mode multiplexer and demultiplexer based on adiabatic couplers

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Xiao, X (Xiao, Xi); Yu, JZ (Yu, Jinzhong); Yu, YD

(Yu, Yude)





Abstract: A two-mode (de) multiplexer based on adiabatic couplers is proposed and experimentally demonstrated. The experimental results are in good agreement with the simulations. An ultralow mode cross talk below -36 dB and a low insertion loss of about 0.3 dB over a broad bandwidth from 1500 to

1600 nm are measured. The design is also fabrication-tolerant, and the insertion loss can be further improved in the future. (C) 2013 Optical Society of America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Xiao, Xi; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci, State Key

Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst

Semicond, POB 912, Beijing 100083, Peoples R China.


ISSN: 0146-9592

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Record 130 of 495

Title: Numerical computation of pyramidal quantum dots with band non-parabolicity

Author(s): Gong, L (Gong Liang); Shu, YC (Shu Yong-chun); Xu, JJ (Xu Jing-jun); Wang, ZG (Wang

Zhan-guo)

Source: SUPERLATTICES AND MICROSTRUCTURES Volume: 61 Pages: 81-90 DOI:

10.1016/j.spmi.2013.06.011 Published: SEP 2013



Abstract: This paper presents an effective and feasible eigen-energy scanning method to solve polynomial matrix eigenvalues introduced by 3D quantum dots problem with band non-parabolicity. The pyramid-shaped quantum dot is placed in a computational box with uniform mesh in Cartesian coordinates. Its corresponding Schrodinger equation is discretized by the finite difference method. The interface conditions are incorporated into the discretization scheme without explicitly enforcing them. By comparing the eigenvalues from isolated quantum dots and a vertically aligned regular array of them, we investigate the coupling effect for variable distances between the quantum dots and different size. (C)

2013 Elsevier Ltd. All rights reserved.

Addresses: [Gong Liang; Shu Yong-chun; Xu Jing-jun] Nankai Univ, Minist Educ, Key Lab Adv Tech &

Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

[Wang Zhan-guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

Reprint Address: Gong, L (reprint author), Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak

Light Nonlinear, Tianjin 300457, Peoples R China.

E-mail Addresses: gongliang@mail.nankai.edu.cns

ISSN: 0749-6036

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Record 131 of 495

Title: Preparation and photoluminescence properties of reverse type-I ZnO/PbS core/shell nanorods

Author(s): He, ZH (He, Zhaohui); Meng, XQ (Meng, Xiuqing)

Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 24 Issue: 9

Pages: 3365-3370 DOI: 10.1007/s10854-013-1256-5 Published: SEP 2013



Abstract: ZnO/PbS one-dimensional core/shell nanorods have been fabricated by a two-step growth method. Photoluminescence properties of these samples with different shell thickness are studied in

detail. The result reveals that the photoluminescence intensity of the ZnO/PbS core/shell nanorods changes with the increase of thickness of PbS shell. When the shell is very thin, the increase in photoluminescence intensity is attributed to the modification of surface defect state. When the shell becomes thicker, the formation of a reverse type-I band alignment between the core and shell is ascribed to be the factor resulting in the decrease in intensity of the photoluminescence properties.

Addresses: [He, Zhaohui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,


[Meng, Xiuqing] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R

China.

Reprint Address: He, ZH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices

& Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zhhe@semi.ac.cn

ISSN: 0957-4522

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Record 132 of 495

Title: Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface

Author(s): Zheng, L (Zheng, Liu); Sun, GS (Sun, Guosheng); Zhang, F (Zhang, Feng); Liu, SB (Liu,

Shengbei); Liu, B (Liu, Bin); Dong, L (Dong, Lin); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Liu,

XF (Liu, Xingfang); Yan, GG (Yan, Guoguo); Tian, LX (Tian, Lixin); Zeng, YP (Zeng, Yiping)


10.1016/j.apsusc.2013.05.017 Published: SEP 1 2013



Abstract: Formation mechanisms of initial 4H-SiC (0 0 0 1)/SiO2 interface were analyzed by density functional theory (DFT) and angle-dependent X-ray photoelectron spectroscopy (ADXPS). Through the theoretical model calculations, either C or O interstitial is likely to exist in the oxidation process of 4H-SiC.

Besides, there is one suboxide theoretically more easily to form and more stable than any others. The results of the ADXPS experiment revealed only one suboxide with shift of +0.94 eV relative to the 4H-SiC bulk component rather than three ones, which verified the theoretical results. These calculation and experimental results demonstrated there is only one rather than three silicon suboxides that induced the high density of states in the 4H-SiC/SiO2 interface. Besides, we did some speculations about the formation mechanism of the initial 4H-SiC/SiO2 interface according to the theoretical and experimental results. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zheng, Liu; Sun, Guosheng; Zhang, Feng; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei;

Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Chinese Acad Sci, Inst Semicond,


[Zheng, Liu; Sun, Guosheng; Zhang, Feng; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao,

Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Beijing Key Lab Low Dimens Semicond

Mat & Devices, Beijing 100083, Peoples R China.




ISSN: 0169-4332

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Record 133 of 495

Title: Multi-point defect single-fundamental-mode photonic crystal vertical cavity surface emitting laser

Author(s): Xie, YY (Xie, Yi-Yang); Xu, C (Xu, Chen); Kan, Q (Kan, Qiang); Wang, CX (Wang, Chun-Xia);

Chen, HD (Chen, Hong-Da)

Source: OPTICS AND LASER TECHNOLOGY Volume: 50 Pages: 130-133 DOI:

10.1016/j.optlastec.2013.02.009 Published: SEP 2013



Abstract: A seven-point-defect photonic crystal (PhC) vertical cavity surface emitting laser (VCSEL) operating with high single-fundamental-mode of 23 mW and low threshold current of 1.2 mA was demonstrated and its performance was analyzed. The single-fundamental-mode emission aperture

(central defect area) was enlarged to achieve high output power. Furthermore, suitable refractive index

step due to the photonic crystal structure was obtained to overcome the external index perturbations, which can be attributed to stable single-fundamental-mode operation even at saturation current. The transverse mode confinement characteristics by photonic crystal was analyzed based on the effective index model and showed good agreement with the experiment results. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Xie, Yi-Yang; Xu, Chen] Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol,


[Xie, Yi-Yang; Kan, Qiang; Wang, Chun-Xia; Chen, Hong-Da] Chinese Acad Sci, Inst Semicond, State


Reprint Address: Kan, Q (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: kanqiang@semi.ac.cn

ISSN: 0030-3992

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Record 134 of 495

Title: From the ZnO Hollow Cage Clusters to ZnO Nanoporous Phases: A First-Principles Bottom-Up

Prediction

Author(s): Liu, ZF (Liu, Zhifeng); Wang, XG (Wang, Xingiang); Cai, JT (Cai, Jiangtao); Liu, GB (Liu,

Gaobin); Zhou, P (Zhou, Ping); Wang, K (Wang, Kan); Zhu, HJ (Zhu, Hengjiang)


DOI: 10.1021/jp405084r Published: AUG 29 2013



Abstract: A family of ZnkOk (k = 12, 16) cluster-assembled solid phases with novel structures and properties has been characterized utilizing a bottom-up approach with density functional calculations.

Geometries, stabilities, equation of states, phase transitions, and electronic properties of these ZnO polymorphs have been systematically investigated. First-principles molecular dynamics (FPMD) study of the two selected building blocks, Zn12O12 and Zn16O16, with hollow cage structure and large

HOMO-LUMO gap shows that both of them are thermodynamically stable enough to survive up to at least 500 K. Via the coalescence of building blocks, we find that the Zn12O12 cages are able to form eight stable phases by four types of Zn12O12-Zn12O12 interactions, and the Zn16O16 cages can bind into three phases by the Zn16O16-Zn16O16 links of H', C', and S'. Among these phases, six ones are reported for the first time. This has greatly extended the family of ZnO nanoporous phases. Notably, some of these phases are even more stable than the synthesized metastable rocksalt ZnO polymorph.

The hollow cage structure of the corresponding building block ZnkOk is well preserved in all of them, which leads to their low-density nanoporous and high flexibility features. In addition the electronic integrity (wide-energy gap) of the individual ZnkOk is also retained. Our calculation reveals that they are all semiconductor with a large direct or indirect band gap. The insights obtained in this work are likely to be general in II-VI semiconductor compounds and will be helpful for extending the range of properties and applications of ZnO materials.

Addresses: [Liu, Zhifeng; Wang, Xingiang; Liu, Gaobin; Zhou, Ping; Wang, Kan] Chongqing Univ, Coll

Phys, Chongqing 401331, Peoples R China.

[Cai, Jiangtao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


[Zhou, Ping] Chongqing Jiaotong Univ, Sch Sci, Chongqing 400074, Peoples R China.

[Zhu, Hengjiang] Xinjiang Normal Univ, Coll Phys & Elect Engn, Urumqi 830054, Peoples R China.

Reprint Address: Liu, ZF (reprint author), Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R

China.

E-mail Addresses: zfliu8413@cqu.edu.cn; xqwang@cqu.edu.cn

ISSN: 1932-7447

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Record 135 of 495

Title: Generation and evolution of the terahertz vortex beam

Author(s): He, JW (He, Jingwen); Wang, XK (Wang, Xinke); Hu, D (Hu, Dan); Ye, JS (Ye, Jiasheng); Feng,

SF (Feng, Shengfei); Kan, Q (Kan, Qiang); Zhang, Y (Zhang, Yan)


10.1364/OE.21.020230 Published: AUG 26 2013



Abstract: Based on the complementary V-shaped antenna structure, ultrathin vortex phase plates are designed to achieve the terahertz (THz) optical vortices with different topological charges. Utilizing a THz holographic imaging system, the two dimensional complex field information of the generated THz vortex beam with the topological number l = 1 is directly obtained. Its far field propagation properties are analyzed in detail, including the rotation, the twist direction, and the Gouy phase shift of the vortex phase.

An analytic Laguerre-Gaussian mode is used to simulate and explain the measured phenomena. The experimental and simulation results overlap each other very well. (C)2013 Optical Society of America

Addresses: [He, Jingwen; Wang, Xinke; Hu, Dan; Ye, Jiasheng; Feng, Shengfei; Zhang, Yan] Capital

Normal Univ, Dept Phys, Beijing Key Lab THz Spect & Imaging, Key Lab THz Optoelect,Minist Educ,


[He, Jingwen; Hu, Dan; Zhang, Yan] Harbin Inst Technol, Harbin 150001, Peoples R China.

[Kan, Qiang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Wang, XK (reprint author), Capital Normal Univ, Dept Phys, Beijing Key Lab THz Spect

& Imaging, Key Lab THz Optoelect,Minist Educ, 105 XiSanHuan BeiLu, Beijing 100048, Peoples R

China.

E-mail Addresses: wxk82721@gmail.com; yzhang@mail.cnu.edu.cn

ISSN: 1094-4087

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Record 136 of 495

Title: Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching

Author(s): Geng, C (Geng, Chong); Zheng, L (Zheng, Lu); Fang, HJ (Fang, Huajing); Yan, QF (Yan,

Qingfeng); Wei, TB (Wei, Tongbo); Hao, ZB (Hao, Zhibiao); Wang, XQ (Wang, Xiaoqing); Shen, DZ

(Shen, Dezhong)

Source: NANOTECHNOLOGY Volume: 24 Issue: 33 Article Number: 335301 DOI:

10.1088/0957-4484/24/33/335301 Published: AUG 23 2013



Abstract: Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

Addresses: [Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wang, Xiaoqing; Shen, Dezhong]

Tsinghua Univ, Dept Chem, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.

[Wei, Tongbo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Hao, Zhibiao] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.

Reprint Address: Geng, C (reprint author), Tsinghua Univ, Dept Chem, State Key Lab New Ceram & Fine

Proc, Beijing 100084, Peoples R China.

E-mail Addresses: yanqf@mail.tsinghua.edu.cn

ISSN: 0957-4484

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Record 137 of 495

Title: Ag@SiO2 core-shell nanoparticles on silicon nanowire arrays as ultrasensitive and ultrastable substrates for surface-enhanced Raman scattering

Author(s): Zhang, CX (Zhang, Chang Xing); Su, L (Su, Lei); Chan, YF (Chan, Yu Fei); Wu, ZL (Wu, Zheng

Long); Zhao, YM (Zhao, Yong Mei); Xu, HJ (Xu, Hai Jun); Sun, XM (Sun, Xiao Ming)

Source: NANOTECHNOLOGY Volume: 24 Issue: 33 Article Number: 335501 DOI:

10.1088/0957-4484/24/33/335501 Published: AUG 23 2013



Abstract: Ag nanoparticles (NPs) coated with silica nanolayers were decorated onto a large-scale and uniform silicon nanowire array (SiNWA) by simple chemical etching and metal reduction processes. The three-dimensional Ag/SiNWAs thus formed are employed as a substrate for surface-enhanced Raman scattering (SERS), and a detection limit for rhodamine 6G as low as 10(-16) M and a Raman enhancement factor as large as 10(14) were obtained. Simulation results show that two kinds of inter-Ag-NP nanogaps in three-dimensional geometry create a huge number of SERS 'hot spots' where electromagnetic fields are substantially amplified, contributing to the higher SERS sensitivity and lower detection limit. The excellent SERS stability of Ag/SiNWAs is attributed to the presence of the SiO2 nanolayer around Ag NPs that prevented the Ag NP surface from being oxidized. The calibration of the

Raman peak intensities of rhodamine 6G and thiram allowed their quantitative detection. Our finding is a significant advance in developing SERS substrates for the fast and quantitative detection of trace organic molecules.

Addresses: [Zhang, Chang Xing; Su, Lei; Chan, Yu Fei; Xu, Hai Jun; Sun, Xiao Ming] Beijing Univ Chem

Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China.

[Zhang, Chang Xing; Su, Lei; Chan, Yu Fei; Xu, Hai Jun; Sun, Xiao Ming] Beijing Univ Chem Technol,

Sch Sci, Beijing 100029, Peoples R China.

[Wu, Zheng Long] Beijing Normal Univ, Analyt & Testing Ctr, Beijing 100875, Peoples R China.

[Zhao, Yong Mei] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing


Reprint Address: Zhang, CX (reprint author), Beijing Univ Chem Technol, State Key Lab Chem Resource

Engn, Beijing 100029, Peoples R China.

E-mail Addresses: hjxu@mail.buct.edu.cn

ISSN: 0957-4484

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Record 138 of 495

Title: Design of a silicon Mach-Zehnder modulator with a U-type PN junction

Author(s): Cao, TT (Cao, Tongtong); Fei, YH (Fei, Yonghao); Zhang, LB (Zhang, Libin); Cao, YM (Cao,

Yanmei); Chen, SW (Chen, Shaowu)


Published: AUG 20 2013



Abstract: We have developed a silicon depletion-mode modulator featuring a novel U-type PN junction that enables a substantial improvement in electro-optical modulation efficiency. Through electrical, optical, and manufacturing process simulations, an ultralow V pi L of 0.63 V . cm is exhibited with 3 V reverse bias. The high modulation efficiency enables a high extinction ratio (ER) of >17 dB with only a 1 mm phase shifter when the excess loss at the "on" state is 2 dB. The ER can maintain >12 dB at similar to 28

GHz operation with a 3 V peak-to-peak voltage due to the small voltage attenuation of the short phase shifter. (C) 2013 Optical Society of America

Addresses: [Cao, Tongtong; Fei, Yonghao; Zhang, Libin; Cao, Yanmei; Chen, Shaowu] Chinese Acad Sci,

Inst Semicond, State Key Lab Optoelect, Beijing 100083, Peoples R China.




ISSN: 1559-128X

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Record 139 of 495

Title: Ge/Si quantum dots thin film solar cells

Author(s): Liu, Z (Liu, Zhi); Zhou, TW (Zhou, Tianwei); Li, LL (Li, Leliang); Zuo, YH (Zuo, Yuhua); He, C

(He, Chao); Li, CB (Li, Chuanbo); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Wang, QM

(Wang, Qiming)


10.1063/1.4818999 Published: AUG 19 2013



Abstract: Thin film p-i-n solar cells (SCs) with 30 bilayers undoped or p-type self-assembled Ge/Si quantum dots (QDs) were fabricated on n(+)-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. Compared with the SCs without Ge QDs, the external quantum efficiency in infrared region and the short-circuit current densities of the SCs with Ge QDs increased. However, their open-circuit voltages and efficiencies decreased. The open circuit voltages of p-type Ge/Si QDs SCs recovered significantly at low temperature, which was due to the suppression of recombination centers and longer carrier lifetime. (C) 2013 AIP Publishing LLC.

Addresses: [Liu, Zhi; Zhou, Tianwei; Li, Leliang; Zuo, Yuhua; He, Chao; Li, Chuanbo; Xue, Chunlai;

Cheng, Buwen; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,





ISSN: 0003-6951

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Record 140 of 495

Title: Conjugated molecule doped polyaniline films as buffer layers in organic solar cells

Author(s): Tan, FR (Tan, Furui); Qu, SC (Qu, Shengchun); Zhang, WF (Zhang, Weifeng); Zhang, XW

(Zhang, Xingwang); Wang, ZG (Wang, Zhanguo)

Source: SYNTHETIC METALS Volume: 178 Pages: 18-21 DOI: 10.1016/j.synthmet.2013.06.006




Abstract: Doping of polyaniline (PANI) is of great importance to tune its properties. In this work, we have prepared doped PANI films with electrochemistry method. A conjugated molecule with short chain length,

9-anthracene methyl acid (AMA), was used as the dopant considering its electrically active conjugated structure. Films morphology of doped and undoped PANI samples was researched. The corresponding changes in optical and electrical properties after AMA doping were also discussed. The organic hybrid solar cells with AMA doped PANI films as the anode buffers demonstrated enhanced photovoltaic performance compared to that without buffer layer and that with undoped PANI films. The application of synthesized PANI films in organic solar cells indicates a promising advantage in the flexible photovoltaic devices. (c) 2013 Elsevier B.V. All rights reserved.

Addresses: [Tan, Furui; Zhang, Weifeng] Henan Univ, Dept Phys & Elect, Key Lab Photovolta Mat,

Henan 475004, Peoples R China.

[Tan, Furui; Qu, Shengchun; Zhang, Xingwang; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key

Lab Semicond Mat Sci, Beijing 100083, Peoples R China.



E-mail Addresses: 82305052qsc@semi.ac.cn

ISSN: 0379-6779

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Record 141 of 495

Title: Widely tunable dual-mode distributed feedback laser fabricated by selective area growth technology integrated with Ti heaters

Author(s): Zhang, C (Zhang, Can); Liang, S (Liang, Song); Zhu, HL (Zhu, Hongliang); Wang, W (Wang,

Wei)





Abstract: A widely tunable dual-mode distributed feedback (DFB) laser fabricated by selective area growth (SAG) technology integrated with Ti heaters was demonstrated. In the device, an original mode

spacing of 4 nm was obtained by the simple SAG technology. Ti thin-film heaters were integrated with a novel procedure, which simplifies the fabrication of such heaters greatly. A large electrical resistance of the heaters is obtained at the same time, resulting in a high wavelength tuning efficiency. An accurate mode spacing as small as 0.34 nm and as large as 8.06 nm is achieved, which corresponds to a wide beat frequency range from 42.2 GHz to 1 THz. The simple fabrication process indicates that it is promising for reducing the cost of dual-mode DFB laser in fabricating self-pulsation lasers and THz generators. (C) 2013 Optical Society of America

Addresses: [Zhang, Can; Liang, Song; Zhu, Hongliang; Wang, Wei] Chinese Acad Sci, Inst Semicond,


Reprint Address: Zhang, C (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: zhangcan537@semi.ac.cn

ISSN: 0146-9592

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Record 142 of 495

Title: All-fiber optical filter with an ultranarrow and rectangular spectral response

Author(s): Zou, XH (Zou, Xihua); Li, M (Li, Ming); Pan, W (Pan, Wei); Yan, LS (Yan, Lianshan); Azana, J

(Azana, Jose); Yao, JP (Yao, Jianping)





Abstract: Optical filters with an ultranarrow and rectangular spectral response are highly desired for high-resolution optical/electrical signal processing. An all-fiber optical filter based on a fiber Bragg grating with a large number of phase shifts is designed and fabricated. The measured spectral response shows a

3 dB bandwidth of 650 MHz and a rectangular shape factor of 0.513 at the 25 dB bandwidth. This is the narrowest rectangular bandpass response ever reported for an all-fiber filter, to the best of our knowledge.

The filter has also the intrinsic advantages of an all- fiber implementation. (C) 2013 Optical Society of

America

Addresses: [Zou, Xihua; Pan, Wei; Yan, Lianshan] Southwest Jiaotong Univ, Ctr Informat Photon &

Commun, Chengdu 610031, Peoples R China.

[Zou, Xihua; Li, Ming; Azana, Jose] INRS EMT, Quebec City, PQ, Canada.

[Zou, Xihua] Sci & Technol Elect Informat Control Lab, Chengdu 610036, Peoples R China.

[Zou, Xihua; Yao, Jianping] Univ Ottawa, Microwave Photon Res Lab, Ottawa, ON K1N 6N5, Canada.

[Li, Ming] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing, Peoples R

China.

Reprint Address: Zou, XH (reprint author), Southwest Jiaotong Univ, Ctr Informat Photon & Commun,

Chengdu 610031, Peoples R China.

E-mail Addresses: zouxihua@swjtu.edu.cn

ISSN: 0146-9592

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Record 143 of 495

Title: Functionalization of monolayer MoS2 by substitutional doping: A first-principles study

Author(s): Yue, Q (Yue, Qu); Chang, SL (Chang, Shengli); Qin, SQ (Qin, Shiqiao); Li, JB (Li, Jingbo)

Source: PHYSICS LETTERS A Volume: 377 Issue: 19-20 Pages: 1362-1367 DOI:

10.1016/j.physleta.2013.03.034 Published: AUG 15 2013



Abstract: Electron-beam mediated substitutional doping of monolayer MoS2 was recently demonstrated, opening a new way to modify its properties. Using first-principles calculations, the structural, electronic and magnetic properties of monolayer MoS2 doped with nonmetal and transition-metal atoms are investigated. All dopants are strongly bound to the structures, inducing interesting magnetic behaviors.

While all H, B, N and F-doped monolayers have magnetic moment of 1.0 mu(B), V, Cr, Mn, Fe and

Co-doped ones attain 1.0, 4.0, 3.0, 3.0 and 1.0 mu(B), respectively. Additionally, MoS2 undergoes transition from semiconductor to half-metal in the presence of H, B or Cr doping. (C) 2013 Elsevier B.V.

All rights reserved.

Addresses: [Yue, Qu; Chang, Shengli; Qin, Shiqiao] Natl Univ Def Technol, Coll Sci, Changsha 410073,

Hunan, Peoples R China.

[Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083,

Peoples R China.




ISSN: 0375-9601

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Record 144 of 495

Title: Two-band finite difference method for the bandstructure calculation with nonparabolicity effects in quantum cascade lasers

Author(s): Ma, XP (Ma, Xunpeng); Li, KW (Li, Kangwen); Zhang, ZY (Zhang, Zuyin); Hu, HF (Hu,

Haifeng); Wang, Q (Wang, Qing); Wei, X (Wei, Xin); Song, GF (Song, Guofeng)


10.1063/1.4817795 Published: AUG 14 2013



Abstract: We present a two-band finite difference method for the bandstructure calculation of quantum cascade lasers (QCLs) based on the equivalent two-band model of the nonparabolic Schrodinger equation. Particular backward and forward difference forms are employed in the discretization procedure instead of the common central difference form. In comparison with the linearization approach of the nonparabolic Schrodinger equation, the method is as accurate and reliable as the linearization approach, while the velocity of the method is faster and the matrix elements are more concise, therefore making the method more practical for QCLs simulations. (C) 2013 AIP Publishing LLC.

Addresses: [Ma, Xunpeng; Li, Kangwen; Zhang, Zuyin; Hu, Haifeng; Wang, Qing; Wei, Xin; Song,

Guofeng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Ma, XP (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.


ISSN: 0021-8979

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Record 145 of 495

Title: Spin-based effects and transport properties of a spin-orbit-coupled hexagonal optical lattice

Author(s): Zhu, GB (Zhu, G. -B.); Sun, Q (Sun, Q.); Zhang, YY (Zhang, Y. -Y.); Chan, KS (Chan, K. S.);

Liu, WM (Liu, W. -M.); Ji, AC (Ji, A. -C.)

Source: PHYSICAL REVIEW A Volume: 88 Issue: 2 Article Number: 023608 DOI:

10.1103/PhysRevA.88.023608 Published: AUG 13 2013



Abstract: We investigate an ultracold Fermi gas in a hexagonal lattice subjected to a strong Rashba spin-orbit coupling (SOC). We focus on the marginal Abelian limit with the strength of SOC kappa = pi/2, where the derived Dirac fermions are spin-1/2 spinors in contrast to the pure hexagonal lattice. We find a double-degeneracy at the center of the Brillouin zone, which is a spin-3/2 Dirac-Weyl fermion that can be represented as two spin-1/2 fermions. While at the corner of the Brillouin zone, there occur another two spin-1/2 fermions. These Dirac spinors display a verity of spin textures beyond the usual topological properties. Furthermore, we investigate the energy spectrum of one- dimensional (1D) zigzag and armchair ribbons, and show that the appearance of a new cone at the center of the Brillouin zone can induce two flat bands in a 1D zigzag ribbon. These unique properties allow us to transport a single spin-1/2 Dirac spinor through the 1D zigzag ribbon with two quasi-two-dimensional leads, where only the spin-up or spin-down freedom of the Dirac spinors can transit through the ribbon.

Addresses: [Zhu, G. -B.; Sun, Q.; Ji, A. -C.] Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R

China.

[Zhu, G. -B.; Chan, K. S.] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R

China.

[Sun, Q.; Liu, W. -M.] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.

[Zhang, Y. -Y.] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, Y. -Y.] Peking Univ, ICQM, Beijing 100871, Peoples R China.

Reprint Address: Ji, AC (reprint author), Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R

China.

E-mail Addresses: andrewjee@sina.com

ISSN: 1050-2947

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Record 146 of 495

Title: Multiple scattering theory for massive Dirac fermions on the topological insulator surface with a strong warping effect

Author(s): Fu, ZG (Fu, Zhen-Guo); Zhang, P (Zhang, Ping); Lin, HQ (Lin, Hai-Qing); Li, SS (Li, Shu-Shen)


10.1103/PhysRevB.88.085304 Published: AUG 5 2013



Abstract: We theoretically develop a partial-wave method to study multiple scattering of massive Dirac fermions on the surface of topological insulators (TI) with strong warping effect. The cross sections (CS), local density of states (LDOS), and charge current density (CCD) for single-, two-, and three-centered magnetic scattering cases are discussed. We demonstrate that the s-wave approximation is not advisable and convergent for magnetic impurity scattering. Similar to the case of nonmagnetic impurity scattering, a sharp resonance peak at the band edge of the gapped TI is found in the total CS for the magnetic impurity scattering. Furthermore, we show that with increasing the Fermi energy, the power-law decay of LDOS is modified due to the warping effect of the Fermi surface. The CCD patterns are also modified remarkably by the strong warping.

Addresses: [Fu, Zhen-Guo; Zhang, Ping; Lin, Hai-Qing] Beijing Computat Sci Res Ctr, Beijing 100084,

Peoples R China.

[Zhang, Ping] Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China.

[Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

Reprint Address: Zhang, P (reprint author), Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R

China.

E-mail Addresses: zhang_ping@iapcm.ac.cn

ISSN: 1098-0121

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Record 147 of 495

Title: Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

Author(s): Liu, XF (Liu Xing-Fang); Sun, GS (Sun Guo-Sheng); Liu, B (Liu Bin); Yan, GG (Yan Guo-Guo);

Guan, M (Guan Min); Zhang, Y (Zhang Yang); Zhang, F (Zhang Feng); Dong, L (Dong Lin); Zheng, L

(Zheng Liu); Liu, SB (Liu Sheng-Bei); Tian, LX (Tian Li-Xin); Wang, L (Wang Lei); Zhao, WS (Zhao

Wan-Shun); Zeng, YP (Zeng Yi-Ping)


10.1088/1674-1056/22/8/086802 Published: AUG 2013



Abstract: We investigate the formations of wurtzite (WZ) SiC nano polytypes in zinc blende (ZB) SiC nanofilms hetero-grown on Si-(100) substrates via low pressure chemical vapor deposition (LPCVD) by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of

WZ polytypes (WZ + ZB) and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5,

1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the

Si/C surface saturation control.

Addresses: [Liu Xing-Fang; Sun Guo-Sheng; Liu Bin; Yan Guo-Guo; Guan Min; Zhang Yang; Zhang

Feng; Dong Lin; Zheng Liu; Liu Sheng-Bei; Tian Li-Xin; Wang Lei; Zhao Wan-Shun; Zeng Yi-Ping]


Reprint Address: Liu, XF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: liuxf@mail.semi.ac.cn

ISSN: 1674-1056

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Record 148 of 495

Title: Photonic Generation of Binary Phase-Coded Microwave Signals With Large Frequency Tunability

Using a Dual-Parallel Mach-Zehnder Modulator

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Li, M (Li, Ming); Wang, H (Wang, Hui); Zhu, NH

(Zhu, Ning Hua)


10.1109/JPHOT.2013.2274771 Published: AUG 2013



Abstract: We present a photonic approach to generating binary phase-coded microwave signals with large frequency tunability using a dual-parallel Mach-Zehnder modulator (DPMZM). The DPMZM consists of a pair of sub-MZMs embedded in the two arms of a parent MZM. In our scheme, one of the sub-MZMs is fed by a sinusoidal microwave signal to be phase-coded, and the other sub-MZM is driven by a rectangular coding signal. The optical signals from the two sub-MZMs are destructively interfered by adjusting the dc bias of the parent MZM. As a result, the optical carrier is binary phase coded. A binary phase-coded microwave signal is generated by beating between the optical carrier and the sidebands.

The carrier frequency of the phase-coded microwave signal is widely tunable. Phase-coded microwave signals with two different frequencies at 10 and 20 GHz are experimentally generated, respectively.

Addresses: [Li, Wei; Wang, Li Xian; Li, Ming; Wang, Hui; Zhu, Ning Hua] Chinese Acad Sci, Inst





ISSN: 1943-0655

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Record 149 of 495

Title: All-Optical Microwave Photonic Single-Passband Filter Based on Polarization Control Through

Stimulated Brillouin Scattering

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Zhu, NH (Zhu, Ning Hua)





Abstract: We present a novel microwave photonic single-passband filter based on polarization control through simulated Brillouin scattering (SBS). The principle of the filter is based on a vector SBS process, which is different from the previously reported scalar SBS technique. For a radio-frequency (RF) modulated signal launched to the proposed processor, the state of polarization (SOP) of the optical carrier is rotated by 90 degrees through a two-step SBS process. As a result, the RF signals cannot be recovered in the photodetector (PD). To recover the desirable RF signal, the SOP of the RF modulated sideband is rotated by another pump wave. Since the orthogonal polarization condition between the optical carrier and the sideband is destroyed, the desirable RF signal can be recovered. By adjusting the wavelength of the pump wave, the frequency response of the filter is tunable in a frequency range from similar to 2 to 20 GHz with out-of-band rejection of similar to 30 dB and similar to 3 dB bandwidth of similar to 20 MHz. In addition, for any modulation format, it is converted to the single-sideband (SSB) modulation by the proposed filter. Therefore, the system is expected to be immune to the fiber dispersion-induced power fading. Moreover, it is independent of the modulation formats of the incoming signal wave. The filter structure can be inserted anywhere in conventional fiber-optic links without the need for modifying the link configuration and the transmitter.

Addresses: [Li, Wei; Wang, Li Xian; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, State Key Lab





ISSN: 1943-0655

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Record 150 of 495

Title: Note: Simultaneous measurements of magnetization and electrical transport signal by a reconstructed superconducting quantum interference device magnetometer

Author(s): Wang, HL (Wang, H. L.); Yu, XZ (Yu, X. Z.); Wang, SL (Wang, S. L.); Chen, L (Chen, L.); Zhao,

JH (Zhao, J. H.)

Source: REVIEW OF SCIENTIFIC INSTRUMENTS Volume: 84 Issue: 8 Article Number: 086103

DOI: 10.1063/1.4817623 Published: AUG 2013



Abstract: We have developed a sample rod which makes the conventional superconducting quantum interference device magnetometer capable of performing magnetization and electrical transport measurements simultaneously. The sample holder attached to the end of a 140 cm long sample rod is a nonmagnetic drinking straw or a 1.5 mm wide silicon strip with small magnetic background signal.

Ferromagnetic semiconductor (Ga,Mn) As films are used to test the new sample rod, and the results are in good agreement with previous report. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, H. L.; Yu, X. Z.; Wang, S. L.; Chen, L.; Zhao, J. H.] Chinese Acad Sci, State Key Lab

Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct,

Inst Semicond, POB 912, Beijing 100083, Peoples R China.


ISSN: 0034-6748

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Record 151 of 495

Title: Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a

Formation-Dissolution-Regrowth Method

Author(s): Zhang, SZ (Zhang Shi-Zhu); Ye, XL (Ye Xiao-Ling); Xu, B (Xu Bo); Liu, SM (Liu Shu-Man);

Zhou, WF (Zhou Wen-Fei); Wang, ZG (Wang Zhan-Guo)


10.1088/0256-307X/30/8/087804 Published: AUG 2013



Abstract: Low-density (similar to 10(9) cm(-2)), long-wavelength (more than 1300 nm at room temperature) InAs/GaAs quantum dots (QDs) with only 1.75-mono-layer (ML) InAs deposition were achieved by using a formation-dissolution-regrowth method. Firstly, small high-density InAs QDs were formed at 490 degrees C, then the substrate temperature was ramped up to 530 degrees C, and another

0.2 ML InAs was added. After this process, the density of the InAs QDs became much lower, and their size became much larger. The full width at half maximum of the photoluminescence peak of the low density, long-wavelength InAs QDs was as small as 27.5 meV.

Addresses: [Zhang Shi-Zhu; Ye Xiao-Ling; Xu Bo; Liu Shu-Man; Zhou Wen-Fei; Wang Zhan-Guo]


Reprint Address: Ye, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: xlye@semi.ac.cn

ISSN: 0256-307X

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Record 152 of 495

Title: Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode

Author(s): Wang, W (Wang Wei); Cai, Y (Cai Yong); Huang, W (Huang Wei); Li, HO (Li Hai-ou); Zhang,

BS (Zhang Bao-shun)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 8 Special Issue: SI

Article Number: DOI: 10.7567/JJAP.52.08JG08 Part: 2 Published: AUG 2013



Abstract: In this paper, we report a single-chip large area (5 x 5mm(2)) InGaN/GaN blue LED with the optical output power of 4.3 W. This device consists of 24-stages small LED-cells that are connected in series. Driven at 500 mA, the forward voltage is measured to be 87.2 V with a reverse current of 2.63 x

10(-9) A at -120 V. The comparison of two different cooling schemes, i.e., with/without fan cooling, was made; the results suggest that the thermal convection between the heat sink and air is more critical. A simple white LED package was also tried by covering silicone gel mixed with yttrium aluminum garnet

(YAG) phosphor. The luminous flux and the correlated color temperature (CCT) were measured to be

1090 lm and 5082 K, when the device was driven at 500 mA. This report also demonstrated the feasibility of the application for camera flash. (C) 2013 The Japan Society of Applied Physics

Addresses: [Wang Wei; Cai Yong; Zhang Bao-shun] Chinese Acad Sci, Suzhou Inst Nanotech &

Nanobion, Suzhou 215123, Jiangsu, Peoples R China.

[Wang Wei] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang Wei] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Huang Wei; Li Hai-ou] WuXi Jingkai Technol Co Ltd, Wuxi 214061, Jiangsu, Peoples R China.

Reprint Address: Wang, W (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion,

Suzhou 215123, Jiangsu, Peoples R China.

E-mail Addresses: ycai2008@sinano.ac.cn

ISSN: 0021-4922

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Record 153 of 495

Title: A fiber-based implantable multi-optrode array with contiguous optical and electrical sites

Author(s): Chen, SY (Chen, Sanyuan); Pei, WH (Pei, Weihua); Gui, Q (Gui, Qiang); Chen, YF (Chen,

Yuanfang); Zhao, SS (Zhao, Shanshan); Wang, H (Wang, Huan); Chen, HD (Chen, Hongda)

Source: JOURNAL OF NEURAL ENGINEERING Volume: 10 Issue: 4 Article Number: 046020

DOI: 10.1088/1741-2560/10/4/046020 Published: AUG 2013



Abstract: Objective. Although various kinds of optrodes are designed to deliver light and sense electrophysiological responses, few have a tightly closed optical delivering site or electrical recording site.

The large space between them often blurs the stimulation location and light intensity threshold. Approach.

Based on an optical fiber, we develop an optrode structure which has a coniform tip where the light exit point and gold-based electrode site are located. The optrode is fabricated by integrating a metal membrane electrode on the outside of a tapered fiber. Half of the cone-shape tip is covered by a layer of gold membrane to form the electrode. A commercial fiber connector, mechanical transfer (MT) module, is chosen to assemble the multi-optrode array (MOA). The MT connector acts as both the holder of the optrode array and an aligning part to connect the MOA with the light source. Main results. We fabricated a pluggable MOA weighing only 0.2 g. The scanning electron microscope images showed a tight cover of the metal layer on the optrode tip with an exposure area of 1500 mu m(2). The electrochemical impedance of the optrode at 1 kHz was 100 k Omega on average and the light emission intensity reached 13 mW. The optical modulating and electrophysiological recording ability of the MOA was validated by monitoring the response of cells in a ChR2-expressing mouse's cerebral cortex. Neurons that maintained high cluster quality (signal-to-noise ratio = 5:1) and coherence in response to trains of 20

Hz stimulation were monitored. Significance. The optrode array reduces the distance between the optical stimulating sites and electrophysiological sites dramatically and can supply multiple channels to guide different lights simultaneously. This optrode with its novel structure may lead to a different kind of optical neural control prosthetic device, opening up a new option for neural modulation in the brain.

Addresses: [Chen, Sanyuan; Pei, Weihua; Gui, Qiang; Chen, Yuanfang; Zhao, Shanshan; Wang, Huan;

Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.




ISSN: 1741-2560

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Record 154 of 495

Title: Electronic structure of twisted bilayer graphene

Author(s): Wu, JB (Wu Jiang-Bin); Zhang, X (Zhang Xin); Tan, PH (Tan Ping-Heng); Feng, ZH (Feng

Zhi-Hong); Li, J (Li Jia)


10.7498/aps.62.157302 Published: AUG 2013



Abstract: This paper uses the first-principles and the tight-binding methods to study the electronic structures of twisted bilayer graphene for different angles. The band structures and density of states of twisted bilayer graphene in different angles are calculated. Our analysis points out that there is a linear dispersion relation in a twisted bilayer graphene, which is similar to a monolayer graphene, and the Fermi velocity of twisted graphene is lower and lower with reducing angle. Furthermore, gaps appearing at M point of certain angles, in which the width of gap depends on the twist angle, this gap would strengthen the Raman mode intensity of twisted bilayer graphene, as was confirmed by experiment. The comparison of moire' patterns and the location of density of states both certify that 'AB region' of moire' patterns is the reason of gap at M point.

Addresses: [Wu Jiang-Bin; Zhang Xin; Tan Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab


[Feng Zhi-Hong; Li Jia] Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiaghuang 050051,

Peoples R China.

Reprint Address: Tan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: phtan@semi.ac.cn

ISSN: 1000-3290

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Record 155 of 495

Title: Synthesis of silver quantum dots decorated TiO2 nanotubes and their incorporation in organic hybrid solar cells

Author(s): Tan, FR (Tan, Furui); Qu, SC (Qu, Shengchun); Zhang, XW (Zhang, Xingwang); Liu, K (Liu,

Kong); Wang, ZG (Wang, Zhanguo)


10.1007/s11051-013-1844-6 Published: AUG 2013



Abstract: Uniform silver quantum dots decorated TiO2 nanotubes (Ag-TiO2 NTs) were synthesized via a simple reduction reaction in ethanol solvent. The size distribution of composite NTs arranges from 3 to 5 nm for Ag quantum dots and about 10 nmfor TiO2 NTs in diameter. The composite Ag-TiO2 nanoparticles were incorporated in organic hybrid solar cells through doping into the active layer. Both the optical and electrical properties of the solar cells were improved. The photocurrent and fill factor of the devices were obviously increased after the Ag-TiO2 NTs were introduced, accompanied with a greatly reduced series resistance as well as enlarged shunt resistance. Suppressed recombination due to efficient charge transfer from plasmonic Ag quantum dots to the attached TiO2 NTs made contribution to the charge collection and transportation so that the fill factor was increased. Meanwhile, the enhanced light absorption resulted from effective incident light scattering by the Ag-TiO2 NTs composite played a role in increasing photocurrent. As a result, solar cells with Ag-TiO2 NTs generated an enhanced conversion efficiency up to 20 and 50 % compared to that adopting TiO2 NTs and that without doping, respectively.

Addresses: [Tan, Furui] Hehan Univ, Dept Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Henan,

Peoples R China.

[Tan, Furui; Qu, Shengchun; Zhang, Xingwang; Liu, Kong; Wang, Zhanguo] Chinese Acad Sci, Inst


Reprint Address: Tan, FR (reprint author), Hehan Univ, Dept Phys & Elect, Key Lab Photovolta Mat,

Kaifeng 475004, Henan, Peoples R China.

E-mail Addresses: frtan2012@163.com; qsc@semi.ac.cn

ISSN: 1388-0764

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Record 156 of 495

Title: Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence

Author(s): Ji, QQ (Ji, Qingqing); Zhang, YF (Zhang, Yanfeng); Gao, T (Gao, Teng); Zhang, Y (Zhang, Yu);

Ma, DL (Ma, Donglin); Liu, MX (Liu, Mengxi); Chen, YB (Chen, Yubin); Qiao, XF (Qiao, Xiaofen); Tan, PH

(Tan, Ping-Heng); Kan, M (Kan, Min); Feng, J (Feng, Ji); Sun, Q (Sun, Qiang); Liu, ZF (Liu, Zhongfan)

Source: NANO LETTERS Volume: 13 Issue: 8 Pages: 3870-3877 DOI: 10.1021/nl401938t

Published: AUG 2013



Abstract: Molybdenum disulfide (MoS2) is back in the spotlight because of the indirect-to-direct bandgap tunability and valley related physics emerging in the monolayer regime. However, rigorous control of the monolayer thickness is still a huge challenge for commonly utilized physical exfoliation and chemical synthesis methods. Herein, we have successfully grown predominantly monolayer MoS2 on an inert and nearly lattice-matching mica substrate by using a low-pressure chemical vapor deposition method. The growth is proposed to be mediated by an epitaxial mechanism, and the epitaxial monolayer MoS2 is intrinsically strained on mica due to a small adlayer-substrate lattice mismatch (similar to 2.7%).

Photoluminescence (PL) measurements indicate strong single-exciton emission in as-grown MoS2 and room-temperature PL helicity (circular polarization similar to 0.35) on transferred samples, providing straightforward proof of the high quality of the prepared monolayer crystals. The homogeneously strained high-quality monolayer MoS2 prepared in this study could competitively be exploited for a variety of future applications.

Addresses: [Ji, Qingqing; Zhang, Yanfeng; Gao, Teng; Zhang, Yu; Ma, Donglin; Liu, Mengxi; Chen, Yubin;

Liu, Zhongfan] Peking Univ, Acad Adv Interdisciplinary Studies, Coll Chem & Mol Engn, Ctr Nanochem

CNC,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China.

[Zhang, Yanfeng; Zhang, Yu; Kan, Min; Sun, Qiang] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing


[Qiao, Xiaofen; Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


[Feng, Ji] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

[Sun, Qiang] Peking Univ, Ctr Appl Phys & Technol, Beijing 100871, Peoples R China.

Reprint Address: Zhang, YF (reprint author), Peking Univ, Acad Adv Interdisciplinary Studies, Coll Chem

& Mol Engn, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China.

E-mail Addresses: yanfengzhang@pku.edu.cn; zfliu@pku.edu.cn

ISSN: 1530-6984

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Record 157 of 495

Title: Elastic properties of VO2 from first-principles calculation

Author(s): Dong, HF (Dong, Huafeng); Liu, HF (Liu, Hongfei)

Source: SOLID STATE COMMUNICATIONS Volume: 167 Pages: 1-4 DOI:

10.1016/j.ssc.2013.05.011 Published: AUG 2013



Abstract: We used first-principles methods to calculate the elastic properties of rutile (R) structure and monoclinic (M-1: space group P2(1)/c, M-2: space group C2/m) structure VO2, including single-crystal elastic constants c(ij)'s, polycrystalline bulk modulus, shear modulus, Young's modulus and elastic anisotropy ratio. We found that the energy difference among the R, M-1 and M-2 phases is small, indicating that it is easy to transit among them under a perturbation. Furthermore, from the pressure dependence of c(ij)'s, we also found that the structural instability (or phase transition) will occur when the volumes of the three phases are slightly smaller than their equilibrium volumes. Additionally, the R and

M-2 phases are predicted to be harder than the M-1 phase, indicated by their larger bulk moduli and shear moduli. The elastic anisotropy of the M-2 phase is larger than the M-1 and R phases. The presently predicted elastic properties of VO2 provide helpful guidance for the strain energy estimation and stress analysis in nano-electronic devices. Crown Copyright (C) 2013 Published by Elsevier Ltd. All rights reserved.

Addresses: [Dong, Huafeng] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Dong, Huafeng; Liu, Hongfei] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


Reprint Address: Dong, HF (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

E-mail Addresses: hfdong@semi.ac.cn

ISSN: 0038-1098

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Record 158 of 495

Title: Numerical analysis on quantum dots-in-a-well structures by finite difference method

Author(s): Gong, L (Gong Liang); Shu, YC (Shu Yong-chun); Xu, JJ (Xu Jing-jun); Zhu, QS (Zhu

Qin-sheng); Wang, ZG (Wang Zhan-guo)

Source: SUPERLATTICES AND MICROSTRUCTURES Volume: 60 Pages: 311-319 DOI:

10.1016/j.spmi.2013.05.012 Published: AUG 2013



Abstract: A finite difference technology is applied to the InAs/InGaAs/GaAs quantum dots-in-a-well

(DWELL) structures in order to determine their electronic properties. Conventional quantum dots (QDs) sample has a simple structure, i.e., the QDs are imbedded in a GaAs bulk medium. In stead of the conventional structure, we prefer the weak confinement DWELL structure because it can efficiently lower the intersubband transition energy. Thus the DWELL detector is expected to make the longer wavelength detection possible. Present method used in this study is demonstrated to be efficient and flexible for determining the electronic state of the DWELL system. However, to our knowledge there has been no literature reporting so far on the electronic structure of DWELL characterized by the finite difference method. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Gong Liang; Shu Yong-chun; Xu Jing-jun] Nankai Univ, Minist Educ, Key Lab Adv Tech &

Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

[Zhu Qin-sheng; Wang Zhan-guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


Reprint Address: Gong, L (reprint author), Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak

Light Nonlinear, Tianjin 300457, Peoples R China.

E-mail Addresses: gongliang@mail.nankai.edu.cn

ISSN: 0749-6036

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Record 159 of 495

Title: Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer

Author(s): Li, Y (Li, Ym); Cheng, B (Cheng, Bw)

Source: JOURNAL OF OPTICS Volume: 15 Issue: 8 Article Number: 085501 DOI:

10.1088/2040-8978/15/8/085501 Published: AUG 2013



Abstract: A tapered-mode coupler integrated GeSi electro-absorption (EA) modulator is investigated theoretically. To improve the parameter insensitivity and modulation efficiency of the GeSi EA modulator based on evanescent coupling, a tapered coupler on the GeSi layer is introduced in our design. The two coupling mechanisms in our suggested structure are compared. Both the beam propagation method

(BPM) calculation and coupling mode theory show almost 100% power transfer from the bottom rib waveguide to the GeSi layer. After a series of designs of the tapered coupler, we get a modulator with the advantages of both evanescent-coupling modulators (Feng et al 2011 Opt. Express 19 7062-7, Feng et al

2012 Opt. Express 20 22224-32, Liu et al 2008 Nature Photon. 2 433-7, Liu et al 2007 Opt. Express 15

623-8) and butt-coupling modulators (Lim et al 2011 Opt. Express 19 5040-6), that are ease of fabrication, low coupling loss, performance stability and high modulation efficiency.

Addresses: [Li, Ym; Cheng, Bw] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,


Reprint Address: Li, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: ymli@semi.ac.cn; cbw@red.semi.ac.cn

ISSN: 2040-8978

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Record 160 of 495

Title: Performance analysis of vertical multi-junction solar cell with front surface diffusion for high concentration

Author(s): Xing, YP (Xing, Yupeng); Han, PD (Han, Peide); Wang, S (Wang, Shuai); Fan, YJ (Fan, Yujie);

Liang, P (Liang, Peng); Ye, Z (Ye, Zhou); Li, XY (Li, Xinyi); Hu, SX (Hu, Shaoxu); Lou, SS (Lou, Shishu);

Zhao, CH (Zhao, Chunhua); Mi, YH (Mi, Yanhong)

Source: SOLAR ENERGY Volume: 94 Pages: 8-18 DOI: 10.1016/j.solener.2013.04.030 Published:

AUG 2013



Abstract: The vertical multi-junction (VMJ) solar cell has good potential applications in high concentration photovoltaic. The efficiency of VMJ cell reached to 19.19% under 2480 suns has been reported.

Numerical calculations show that the efficiency can reach close to 30% after optimization. In this work, the performance of the silicon VMJ cell with front surface diffusion working under 1 sun and 1000 suns was calculated numerically using a TCAD software. The front surface diffusion can reduce the requirement of high quality front surface passivation, but increases the series resistance. The effect of the N-type emitter dopant profile, P+-type back surface field dopant profile, width, thickness, bulk doping concentration and lifetime of the sub-cell on the performance of the VMJ cell with front surface diffusion was calculated and analyzed. The efficiency reached to 30.56% under 1000 suns after optimization. (C)


Addresses: [Xing, Yupeng; Han, Peide; Wang, Shuai; Fan, Yujie; Liang, Peng; Ye, Zhou; Li, Xinyi; Hu,

Shaoxu; Lou, Shishu; Zhao, Chunhua; Mi, Yanhong] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Xing, YP (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xingyupeng@semi.ac.cn

ISSN: 0038-092X

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Record 161 of 495

Title: Highly Efficient Coupling Between Inner and Surface Fields in Photonic Crystal Waveguides

Author(s): Yu, TB (Yu, Tianbao); Li, SZ (Li, Sizhong); Liu, NH (Liu, Nianhua); Wang, TB (Wang, Tongbiao);

Liao, QH (Liao, Qinghua); Xu, XM (Xu, Xuming)


DOI: 10.1109/LPT.2013.2269998 Published: AUG 1 2013



Abstract: Connecting inner and surface propagation field in photonic crystal waveguides (PCWs) with an efficient method is critical to achieve flexible designs and applications in photonic integrated circuits. This letter realizes highly efficient coupling between inner and surface PCWs by modifying the structures of waveguides and interface. The aim of the modification is to achieve a good match of modal field profiles between different types of waveguide structures as well as suppress the reflected field at the interface.

The numerical results based on finite-difference time-domain simulations show that the bandwidth for coupling efficiency larger than 90% can be as broad as over 100 nm.

Addresses: [Yu, Tianbao; Li, Sizhong; Wang, Tongbiao; Liao, Qinghua; Xu, Xuming] Nanchang Univ,

Dept Phys, Nanchang 330031, Peoples R China.

[Yu, Tianbao] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

[Liu, Nianhua] Nanchang Univ, Inst Adv Study, Nanchang 330031, Peoples R China.

Reprint Address: Yu, TB (reprint author), Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R

China.

E-mail Addresses: yutianbao@ncu.edu.cn; lsz214@163.com; nhliu@ncu.edu.cn; tbwang@ncu.edu.cn; lqliao@ncu.edu.cn; ncxmxcn@ncu.edu.cn

ISSN: 1041-1135

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Record 162 of 495

Title: High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field pattern

Author(s): Liu, L (Liu, Lei); Zhang, JX (Zhang, Jianxin); Ma, SD (Ma, Shaodong); Qi, AY (Qi, Aiyi); Qu,

HW (Qu, Hongwei); Zhang, YJ (Zhang, Yejin); Zheng, WH (Zheng, Wanhua)





Abstract: High-brightness, edge-emitting diode laser arrays integrated with a phase shifter have been designed and fabricated at a wavelength of about 910 nm. Stable out-of-phase mode is generated through coupling evanescently and converted to be nearly in-phase by the phase modulation from the phase shifter. With a very simple manufacture process, stable single-lobe far-field pattern is achieved in the slow axis when the continuous wave output power exceeds 460 mW/facet, and the divergence angle is only 2.7 times the diffraction-limited value. Such device shows a promising future for high-brightness application with low cost and easy fabrication. (C) 2013 Optical Society of America

Addresses: [Liu, Lei; Zhang, Jianxin; Ma, Shaodong; Qi, Aiyi; Qu, Hongwei; Zhang, Yejin; Zheng,

Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples

R China.

Reprint Address: Zheng, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: whzheng@semi.ac.cn

ISSN: 0146-9592

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Record 163 of 495

Title: Investigation of EEG abnormalities in the early stage of Parkinson's disease

Author(s): Han, CX (Han, Chun-Xiao); Wang, J (Wang, Jiang); Yi, GS (Yi, Guo-Sheng); Che, YQ (Che,

Yan-Qiu)

Source: COGNITIVE NEURODYNAMICS Volume: 7 Issue: 4 Pages: 351-359 DOI:

10.1007/s11571-013-9247-z Published: AUG 2013



Abstract: The objective of the present study was to investigate brain activity abnormalities in the early stage of Parkinson's disease (PD). To achieve this goal, eyes-closed resting state electroencephalography (EEG) signals were recorded from 15 early-stage PD patients and 15 age-matched healthy controls. The AR Burg method and the wavelet packet entropy (WPE) method were used to characterize EEG signals in different frequency bands between the groups, respectively. In the case of the AR Burg method, an increase of relative powers in the delta- and theta-band, and a decrease of relative powers in the alpha- and beta-band were observed for patients compared with controls. For the WPE method, EEG signals from patients showed significant higher entropy over the global frequency domain. Furthermore, WPE in the gamma-band of patients was higher than that of controls, while WPE in the delta-, theta-, alpha- and beta-band were all lower. All of these changes in EEG dynamics may represent early signs of cortical dysfunction, which have potential use as biomarkers of PD in the early stage. Our findings may be further used for early intervention and early diagnosis of PD.

Addresses: [Han, Chun-Xiao; Che, Yan-Qiu] Tianjin Univ Technol & Educ, Tianjin Key Lab Informat

Sensing & Intelligent Co, Tianjin 300222, Peoples R China.

[Han, Chun-Xiao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Jiang; Yi, Guo-Sheng] Tianjin Univ, Sch Elect & Automat Engn, Tianjin 300072, Peoples R China.

Reprint Address: Wang, J (reprint author), Tianjin Univ, Sch Elect & Automat Engn, 92 Weijin Rd, Tianjin


E-mail Addresses: cxhan@tju.edu.cn; jiangwang@tju.edu.cn

ISSN: 1871-4080

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Record 164 of 495

Title: Monolithically Integrated 4-Channel-Selectable Light Sources Fabricated by the SAG Technology

Author(s): Zhang, C (Zhang, Can); Zhu, HL (Zhu, Hongliang); Liang, S (Liang, Song); Han, LS (Han,

Liangshun); Wang, W (Wang, Wei)





Abstract: The monolithic integration of four 1.5-mu m InGaAsP/InP distributed feedback (DFB) lasers with a 4 x 1 multimode-interference (MMI) optical combiner using the selective area growth and butt-joint regrowth technologies is proposed and demonstrated. A dry-etching stop layer is grown to guarantee the etching depth of MMI. The four channels could match the ITU wavelength grid of 200-GHz well with a simple integrated thin-film heater, covering the wavelength range of 1552.3-1556.3 nm. The average output power of LD is 2.8 mW with a 150-mA current, and the threshold current is 20-22 mA at 25 degrees C. The four channels can operate separately or simultaneously.

Addresses: [Zhang, Can; Zhu, Hongliang; Liang, Song; Han, Liangshun; Wang, Wei] Chinese Acad Sci,




E-mail Addresses: zhangcan537@semi.ac.cn; zhuhl@semi.ac.cn

ISSN: 1943-0655

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Record 165 of 495

Title: A III-V/silicon hybrid racetrack ring single-mode laser with periodic microstructures

Author(s): Zhang, YJ (Zhang, Yejin); Wang, HL (Wang, Hailing); Qu, HW (Qu, Hongwei); Zhang, S

(Zhang, Siriguleng); Ma, SD (Ma, Shaodong); Peng, HL (Peng, Hongling); Feng, ZG (Feng, Zhigang);

Zheng, WH (Zheng, Wanhua)

Source: OPTICS COMMUNICATIONS Volume: 301 Pages: 112-115 DOI:

10.1016/j.optcom.2013.03.026 Published: AUG 1 2013



Abstract: In this paper, a III-V/silicon hybrid single-mode on-chip laser is presented. The mode-selection mechanism of the hybrid mode laser is based on a racetrack resonator with periodic microstructures. The laser only needs standard photolithography in the whole fabrication process. Better mode characteristics can be realized comparing to simple runway ring laser. Output power of 0.3 mW and the side-mode suppression ratio of larger than 20 dB in continuous-wave are obtained from experiments. (C) 2013

Elsevier B.V. All rights reserved.

Addresses: [Zhang, Yejin; Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Ma, Shaodong; Peng,

Hongling; Feng, Zhigang; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated





ISSN: 0030-4018

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Record 166 of 495

Title: Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells

Author(s): Liu, CB (Liu, Changbo); Yang, SY (Yang, Shaoyan); Shi, K (Shi, Kai); Liu, GP (Liu, Guipeng);

Zhang, H (Zhang, Heng); Jin, DD (Jin, Dongdong); Gu, CY (Gu, Chengyan); Zhao, GJ (Zhao, Guijuan);

Sang, L (Sang, Ling); Liu, XL (Liu, Xianglin); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo)

Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 52 Pages:

150-154 DOI: 10.1016/j.physe.2013.04.009 Published: AUG 2013



Abstract: A modified quantum dots (QDs) structure model is developed in this study. Compared with the traditional model, the gradual composition transition at the interface between the QDs and matrix is taken into account in the modified model. Two dimensional electron gas (2DEG) mobility limited by QDs scattering is studied based on the modified model. The result is compared with the one based on the traditional model. It is found that the contribution of the gradual composition transition region to the electron mobility is too significant to be negligible, especially in the case of high 2DEG density or small

QDs radius. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Liu, Changbo; Yang, Shaoyan; Shi, Kai; Liu, Guipeng; Zhang, Heng; Jin, Dongdong; Gu,

Chengyan; Zhao, Guijuan; Sang, Ling; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci,


[Liu, Changbo; Yang, Shaoyan; Shi, Kai; Liu, Guipeng; Zhang, Heng; Jin, Dongdong; Gu, Chengyan;

Zhao, Guijuan; Sang, Ling; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst

Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Liu, CB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: liuchb@semi.ac.cn; sh-yyang@semi.ac.cn

ISSN: 1386-9477

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Record 167 of 495

Title: Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs solar cells

Author(s): Yang, TS (Yang, Tianshu); Wang, XD (Wang, Xiaodong); Liu, W (Liu, Wen); Shi, YP (Shi,

Yanpeng); Yang, FH (Yang, Fuhua)


10.1364/OE.21.018207 Published: JUL 29 2013



Abstract: Multilayer anti-reflection (AR) coatings can be used to improve the efficiency of Gallium

Arsenide (GaAs) solar cells. We propose an alternate method to obtain optical thin films with specified refractive indices, which is using a self-assembled nanoporous anodic aluminum oxide (AAO) template as an optical thin film whose effective refractive index can be tuned by pore-widening. Different kinds of double-layer AR coatings each containing an AAO layer were designed and investigated by finite difference time domain (FDTD) method. We demonstrate that a gimel /4n - gimel /4n AR coating consisting of a TiO2 layer and an AAO layer whose effective refractive index is 1.32 realizes a 96.8% light absorption efficiency of the GaAs solar cell under AM1.5 solar spectrum (400 nm-860 nm). We also have concluded some design principles of the double-layer AR coating containing an AAO layer for GaAs solar cells. (C) 2013 Optical Society of America

Addresses: [Yang, Tianshu; Wang, Xiaodong; Liu, Wen; Shi, Yanpeng; Yang, Fuhua] Chinese Acad Sci,

Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Yang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


E-mail Addresses: xdwang@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 1094-4087

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Record 168 of 495

Title: InAs-mediated growth of vertical InSb nanowires on Si substrates

Author(s): Li, TF (Li, Tianfeng); Gao, LZ (Gao, Lizhen); Lei, W (Lei, Wen); Guo, LJ (Guo, Lijun); Pan, HY

(Pan, Huayong); Yang, T (Yang, Tao); Chen, YH (Chen, Yonghai); Wang, ZG (Wang, Zhanguo)


10.1186/1556-276X-8-333 Published: JUL 24 2013



Abstract: In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications.

Addresses: [Li, Tianfeng; Gao, Lizhen; Guo, Lijun] Henan Univ, Sch Phys & Elect, Dept Phys, Kaifeng


[Li, Tianfeng; Yang, Tao; Chen, Yonghai; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab


[Lei, Wen] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia.

[Pan, Huayong] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.

[Pan, Huayong] Peking Univ, Dept Elect, Beijing 100871, Peoples R China.

Reprint Address: Guo, LJ (reprint author), Henan Univ, Sch Phys & Elect, Dept Phys, Kaifeng 475004,

Peoples R China.

E-mail Addresses: juneguo@henu.edu.cn

ISSN: 1931-7573

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Record 169 of 495

Title: Experimental investigation of quantum Simpson's paradox

Author(s): Li, YL (Li, Yu-Long); Tang, JS (Tang, Jian-Shun); Wang, YT (Wang, Yi-Tao); Wu, YC (Wu,

Yu-Chun); Han, YJ (Han, Yong-Jian); Li, CF (Li, Chuan-Feng); Guo, GC (Guo, Guang-Can); Yu, Y (Yu,

Ying); Li, MF (Li, Mi-Feng); Zha, GW (Zha, Guo-Wei); Ni, HQ (Ni, Hai-Qiao); Niu, ZC (Niu, Zhi-Chuan)


10.1103/PhysRevA.88.015804 Published: JUL 24 2013



Abstract: The well-known Simpson's paradox, or Yule-Simpson (YS) effect, is often encountered in social-science and medical-science statistics. It occurs when the correlations present in different groups are reversed if the groups are combined. Simpson's paradox also exists in quantum measurements. In this Brief Report, we experimentally realized two analogous effects: the quantum-classical YS effect and the quantum-quantum YS effect in the quantum-dot system. We also compared the probability of obtaining those two effects under identical quantum measurements and found that the quantum-quantum

YS effect is more likely to occur than the quantum-classical YS effect.

Addresses: [Li, Yu-Long; Tang, Jian-Shun; Wang, Yi-Tao; Wu, Yu-Chun; Han, Yong-Jian; Li, Chuan-Feng;

Guo, Guang-Can] Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Peoples R

China.

[Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan] Chinese Acad Sci, SKLSM, Inst


Reprint Address: Li, CF (reprint author), Univ Sci & Technol China, CAS, Key Lab Quantum Informat,

Hefei 230026, Peoples R China.

E-mail Addresses: cfli@ustc.edu.cn

ISSN: 1050-2947

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Record 170 of 495

Title: High efficient GaN-based laser diodes with tunnel junction

Author(s): Feng, MX (Feng, M. X.); Liu, JP (Liu, J. P.); Zhang, SM (Zhang, S. M.); Jiang, DS (Jiang, D. S.);

Li, ZC (Li, Z. C.); Zhou, K (Zhou, K.); Li, DY (Li, D. Y.); Zhang, LQ (Zhang, L. Q.); Wang, F (Wang, F.);

Wang, H (Wang, H.); Chen, P (Chen, P.); Liu, ZS (Liu, Z. S.); Zhao, DG (Zhao, D. G.); Sun, Q (Sun, Q.);

Yang, H (Yang, H.)


10.1063/1.4816598 Published: JUL 22 2013



Abstract: High-efficient GaN-based laser diodes (LDs) with tunnel junction are designed by replacing conventional p-type AlGaN cladding layers and p-type GaN contact with lower-resistant n-type AlGaN cladding layers and n-type GaN contact. In addition, the characteristics of the LDs with tunnel junction are numerically investigated by using the commercial software LASTIP. It is found that the performance of these LDs is greatly improved. As a comparison, the absorption loss and non-radiative recombination are greatly reduced. The threshold current and series resistance are decreased by 12% and 59%, respectively, and the slope efficiency is raised up by 22.3%. At an injection current of 120 mA, the output power and wall-plug-efficiency are increased by 34% and 79%, respectively. (C) 2013 AIP Publishing

LLC.

Addresses: [Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Zhou, K.; Li, D. Y.; Zhang, L. Q.; Wang, F.;

Wang, H.; Sun, Q.; Yang, H.] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123,

Peoples R China.

[Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Zhou, K.; Li, D. Y.; Zhang, L. Q.; Wang, F.; Wang, H.; Sun,

Q.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Feng, M. X.; Jiang, D. S.; Chen, P.; Liu, Z. S.; Zhao, D. G.] Chinese Acad Sci, Inst Semicond, State Key




E-mail Addresses: jpliu2010@sinano.ac.cn; smzhang2010@sinano.ac.cn

ISSN: 0003-6951

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Record 171 of 495

Title: Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 degrees C at lambda similar to 4.6 mu m

Author(s): Yao, DY (Yao, Dan-Yang); Zhang, JC (Zhang, Jin-Chuan); Liu, FQ (Liu, Feng-Qi); Zhuo, N

(Zhuo, Ning); Yan, FL (Yan, Fang-Liang); Wang, LJ (Wang, Li-Jun); Liu, JQ (Liu, Jun-Qi); Wang, ZG

(Wang, Zhan-Guo)


10.1063/1.4816722 Published: JUL 22 2013



Abstract: We demonstrate surface emitting distributed feedback (DFB) quantum cascade lasers for very high temperature continuous-wave (cw) operation at lambda similar to 4.6 mu m. A second-order DFB grating beneath the waveguide provides efficient vertical outcoupling. cw operation is reported up to a temperature of 75 degrees C. Total output power of 105 mW is obtained with a record low threshold current density of 0.85 kA/cm(2) at 10 degrees C. Single-lobed far-field radiation pattern with a low divergence angle of about 0.17 degrees x 18.7 degrees is achieved. Robust single-mode emission with a side-mode suppression ratio about 30 dB is continuously tunable by the heat sink temperature and injection current. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816722]

Addresses: [Yao, Dan-Yang] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Yao, DY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: zhangjinchuan@semi.ac.cn; fqliu@semi.ac.cn

ISSN: 0003-6951

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Record 172 of 495

Title: Electron energy and angle distribution of GaAs photocathodes

Author(s): Chen, ZH (Chen, Zhanghui); Jiang, XW (Jiang, Xiangwei); Li, JB (Li, Jingbo); Li, SS (Li,

Shushen); Wang, LW (Wang, Linwang)


10.1063/1.4816045 Published: JUL 21 2013



Abstract: A precise Monte Carlo model is developed to investigate the electron energy and angle distribution of the transmission-mode GaAs (100) photocathode at room temperature. Both distributions are important for high-quality electron sources. The results show that the energy loss (0.1309 eV) and the angle-dependent energy distribution curves fit well with experimental data. It is found that 65.24% of the emission electrons come from Gamma valley, 33.62% from L valley, and 1.15% from X valley. The peak of the energy distribution curve is contributed by both Gamma and L-valley electrons, while the high-energy part is contributed by Gamma-valley electrons rather than L electrons, which is different from previous inference and can be attributed to the narrow energy range of L-valley electrons. However,

L-valley electrons have a larger angular spread than Gamma-valley electrons and lead to the spread of the emission cone. The further simulation indicates that increasing the hole concentration or the thickness of the first activation layer can improve the angle distribution, but the energy distribution will turn to be slightly more dispersive. Temperature effect on the two distributions is also analyzed. The energy distribution curve moves towards the higher energy while the angle distribution curve moves towards the lower value when the temperature declines. (C) 2013 AIP Publishing LLC.

Addresses: [Chen, Zhanghui; Jiang, Xiangwei; Li, Jingbo; Li, Shushen] Chinese Acad Sci, Inst Semicond,

State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wang, Linwang] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720

USA.

Reprint Address: Chen, ZH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab



ISSN: 0021-8979

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Record 173 of 495

Title: Investigation anisotropic mode splitting induced by electro-optic birefringence in an

InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser

Author(s): Yu, JL (Yu, J. L.); Cheng, SY (Cheng, S. Y.); Lai, YF (Lai, Y. F.); Chen, YH (Chen, Y. H.)


10.1063/1.4813619 Published: JUL 21 2013



Abstract: The mode splitting induced by electro-optic birefringence in an P-I-N InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser (VCSEL) has been studied by photocurrent difference spectroscopy

(PCDS) at room temperature. The mode splitting, anisotropic broadening width, and the anisotropic integrated area of the two orthogonal polarized modes for a VCSEL device are determined. The mode splitting changes linearly with the injected current, which agree very well with theoretical calculations using a Jones matrix approach. It is demonstrated that the PCDS is a powerful tool to study the cavity anisotropy of a VCSEL device.

Addresses: [Yu, J. L.; Cheng, S. Y.; Lai, Y. F.] Fuzhou Univ, Coll Phys & Informat Engn, Inst Micro Nano

Devices & Solar Cells, Fuzhou 350108, Fujian Province, Peoples R China.

[Chen, Y. H.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

Reprint Address: Yu, JL (reprint author), Fuzhou Univ, Coll Phys & Informat Engn, Inst Micro Nano

Devices & Solar Cells, Fuzhou 350108, Fujian Province, Peoples R China.

E-mail Addresses: jlyu@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 0021-8979

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Record 174 of 495

Title: Mechanical and Electronic Properties of Graphyne and Its Family under Elastic Strain: Theoretical

Predictions

Author(s): Yue, Q (Yue, Qu); Chang, SL (Chang, Shengli); Kang, J (Kang, Jun); Qin, SQ (Qin, Shiqiao); Li,

JB (Li, Jingbo)


DOI: 10.1021/jp4021189 Published: JUL 18 2013



Abstract: Using the first-principles calculations, we investigate the mechanical and electronic properties of graphyne and its family under strain. It is found that the in-plane stiffness decreases with increasing the number of acetylenic linkages, which can be characterized by a simple scaling law. The band gap of the graphyne family is found to be modified by applying strain through various approaches. While homogeneous tensile strain leads to an increase in the band gap, the homogeneous compressive strain as well as uniaxial tensile and compressive strains within the imposed range induce a reduction in it. Both graphyne and graphyne-3 under different tensile strains possess direct gaps at either M or S point of

Brillouin zone, whereas the band gaps of graphdiyne and graphyne-4 are always direct and located at the

G point, irrespective of strain types. Our study suggests a potential direction for fabrication of novel strain-tunable nanoelectronic and optoelectronic devices.

Addresses: [Yue, Qu; Chang, Shengli; Qin, Shiqiao] Natl Univ Def Technol, Coll Sci, Changsha 410073,


[Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct,





ISSN: 1932-7447

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Record 175 of 495

Title: Linear optical pulse compression based on temporal zone plates

Author(s): Li, B (Li, Bo); Li, M (Li, Ming); Lou, S (Lou, Shuqin); Azana, J (Azana, Jose)


10.1364/OE.21.016814 Published: JUL 15 2013



Abstract: We propose and demonstrate time-domain equivalents of spatial zone plates, namely temporal zone plates, as alternatives to conventional time lenses. Both temporal intensity zone plates, based on intensity-only temporal modulation, and temporal phase zone plates, based on phase-only temporal modulation, are introduced and studied. Temporal zone plates do not exhibit the limiting tradeoff between temporal aperture and frequency bandwidth (temporal resolution) of conventional linear time lenses. As a result, these zone plates can be ideally designed to offer a time-bandwidth product (TBP) as large as desired, practically limited by the achievable temporal modulation bandwidth (limiting the temporal resolution) and the amount of dispersion needed in the target processing systems (limiting the temporal aperture). We numerically and experimentally demonstrate linear optical pulse compression by using temporal zone plates based on linear electro-optic temporal modulation followed by fiber-optics dispersion. In the pulse-compression experiment based on temporal phase zone plates, we achieve a resolution of similar to 25.5 ps over a temporal aperture of similar to 5.77 ns, representing an experimental TBP larger than 226 using a phase-modulation amplitude of only similar to 0.8 pi rad. We also numerically study the potential of these devices to achieve temporal imaging of optical waveforms and present a comparative analysis on the performance of different temporal intensity and phase zone plates. (C) 2013 Optical Society of America

Addresses: [Li, Bo; Li, Ming; Azana, Jose] Inst Natl Rech Sci Energie Mat & Telecommun, Montreal, PQ

H5A 1K6, Canada.

[Li, Bo; Lou, Shuqin] Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 10004, Peoples R China.

[Li, Ming] Chinese Acad Sci, Inst Semiconductors, Beijing 100083, Peoples R China.

Reprint Address: Li, B (reprint author), Inst Natl Rech Sci Energie Mat & Telecommun, Montreal, PQ H5A

1K6, Canada.

E-mail Addresses: bo.li@emt.inrs.ca

ISSN: 1094-4087

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Record 176 of 495

Title: Electro-Optic Directed XNOR Logic Gate Based on U-Shaped Waveguides and Microring

Resonators

Author(s): Zhu, WW (Zhu, Weiwei); Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin)


DOI: 10.1109/LPT.2013.2263786 Published: JUL 15 2013



Abstract: We report an electro-optic directed logic gate based on two U-shaped waveguides and two microring resonators, which can implement the XNOR operation. Two electrical signals representing the two operands of the operation are applied to the PIN diodes embedded around the two microring resonators, which are modulated through the plasma dispersion effect. The result of the XNOR operation is obtained at the output port as optical signal. The operation at the speed of 100 Mb/s is demonstrated.

Addresses: [Zhu, Weiwei; Tian, Yonghui; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst Semicond, State


Reprint Address: Zhu, WW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: zhuweiwei@semi.ac.cn; tianyh@semi.ac.cn; zhanglei@semi.ac.cn; oip@semi.ac.cn

ISSN: 1041-1135

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Record 177 of 495

Title: Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition

Author(s): Luo, S (Luo, Shuai); Ji, HM (Ji, Hai-Ming); Yang, XG (Yang, Xiao-Guang); Yang, T (Yang, Tao)


10.1016/j.jcrysgro.2013.04.024 Published: JUL 15 2013



Abstract: The impact of a double-cap procedure using two growth temperatures on the optical characteristics of InAs/InGaAsP/InP quantum dots (QDs) grown by metal-organic chemical vapor deposition has been investigated. With a combination of optimized thickness of the first cap layer and elevated growth temperature for the second cap layer, it is found that the photoluminescence (PL) linewidth of QDs can be significantly reduced from 124 meV to 87 meV at room temperature (RT). This reduction in PL linewidth is likely to be due to the enhanced As/P exchange reaction and indium migration at high growth temperature, which lead to a more uniform QD height distribution. Moreover, the uniformity of the PL peak intensity and peak energy on the wafer surface is evidently improved due to the higher material quality achieved when an elevated temperature is used for the SCL growth. (C) 2013 Elsevier

B.V. All rights reserved.

Addresses: [Luo, Shuai; Ji, Hai-Ming; Yang, Xiao-Guang; Yang, Tao] Chinese Acad Sci, Inst Semicond,


Reprint Address: Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: tyang@semi.ac.cn

ISSN: 0022-0248

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Record 178 of 495

Title: Dispersion Relation of Bloch Modes in Corrugated Metallic Thin Film With Square-Lattice Nanowell

Array

Author(s): Wang, ZZ (Wang, Zhenzhen); Wang, CX (Wang, Chunxia); Kan, Q (Kan, Qiang); Chen, HD

(Chen, Hongda)

Source: JOURNAL OF LIGHTWAVE TECHNOLOGY Volume: 31 Issue: 14 Pages: 2314-2320

DOI: 10.1109/JLT.2013.2262114 Published: JUL 15 2013



Abstract: The optical properties of plasmonic crystal consisting of corrugated metallic thin film with square-lattice nanowell array are theoretically investigated. The dispersion relationship and mode behaviors of surface plasmon polariton (SPP) Bloch modes around the Gamma point in the first Brillouin zone are calculated using rigorous coupled wave analysis method. We found that these properties are relevant to the Bloch-mode excitation of the top surface of metal layer by free-space illumination. We have also studied the influence of the patterned silicon substrate on the excitation of SPP Bloch mode and found that with the increase of gold film thickness, the proportion of energy coupling to the silicon substrate becomes smaller, which would increase the coupling efficiency of SPP mode.

Addresses: [Wang, Zhenzhen; Wang, Chunxia; Kan, Qiang; Chen, Hongda] Chinese Acad Sci, State Key

Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Wang, ZZ (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst


E-mail Addresses: cxwang@semi.ac.cn

ISSN: 0733-8724

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Record 179 of 495

Title: Electro-Optical Response Analysis of a 40 Gb/s Silicon Mach-Zehnder Optical Modulator

Author(s): Ding, JF (Ding, Jianfeng); Ji, RQ (Ji, Ruiqiang); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin)

Source: JOURNAL OF LIGHTWAVE TECHNOLOGY Volume: 31 Issue: 14 Pages: 2434-2440

DOI: 10.1109/JLT.2013.2262522 Published: JUL 15 2013



Abstract: We demonstrate a 40 Gbit/s silicon Mach-Zehnder optical modulator driven by a differential voltage of 0.36 Vpp. The energy efficiency is as low as 32.4 fJ/bit which is near the power efficiency of the ring modulator. We analyze the relationship between the electrical bandwidth and the electro-optical (EO) bandwidth based on the electrical S parameter measurement. Because of the nonlinear response, the electro-optical bandwidths in the small-signal tests are is slightly different when the modulator is biased at different transmission points. But the EO response is much different when the optical phase change is large enough to cover the nonlinear and linear regions at the same time. The nonlinearity can greatly improve the EO response in large-signal test. In our experiment, the rise/fall (20%-80%) time decreases from 13 ps to 10 ps as the driving amplitude increases from 5 V to 6 V under the same reverse bias of 3

V.

Addresses: [Ding, Jianfeng; Ji, Ruiqiang; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst Semicond, State


Reprint Address: Ding, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: oip@semi.ac.cn

ISSN: 0733-8724

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Record 180 of 495

Title: Multi-channel DFB laser arrays fabricated by SAG technology

Author(s): Zhang, C (Zhang, Can); Liang, S (Liang, Song); Zhu, HL (Zhu, Hongliang); Ma, L (Ma, Li);

Wang, BJ (Wang, Baojun); Ji, C (Ji, Chen); Wang, W (Wang, Wei)


10.1016/j.optcom.2013.03.012 Published: JUL 15 2013



Abstract: Selective area growth (SAG) of multi-quantum well materials (MQW) has been carried out for the fabrication of monolithically integrated DFB laser arrays. The effects of different growth conditions on the control of MQW emission wavelengths are studied in view of achieving uniformly spaced array wavelengths. It is found that SAG of MQWs at a lower reactor pressure and with a wider opening of the

SAG masks shows better control of both the optical properties of the MQW materials and the emission wavelengths of lasers. Through optimizing the SAG conditions, a rather good control of the emission wavelengths of DFB lasers is obtained, with less than 0.1 nm wavelength deviations from its corresponding fitted value. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zhang, Can; Liang, Song; Zhu, Hongliang; Ma, Li; Wang, Baojun; Ji, Chen; Wang, Wei]


Reprint Address: Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: liangsong@semi.ac.cn

ISSN: 0030-4018

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Record 181 of 495

Title: Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer

Author(s): Nie, SH (Nie, S. H.); Chin, YY (Chin, Y. Y.); Liu, WQ (Liu, W. Q.); Tung, JC (Tung, J. C.); Lu, J

(Lu, J.); Lin, HJ (Lin, H. J.); Guo, GY (Guo, G. Y.); Meng, KK (Meng, K. K.); Chen, L (Chen, L.); Zhu, LJ

(Zhu, L. J.); Pan, D (Pan, D.); Chen, CT (Chen, C. T.); Xu, YB (Xu, Y. B.); Yan, WS (Yan, W. S.); Zhao, JH

(Zhao, J. H.)


10.1103/PhysRevLett.111.027203 Published: JUL 9 2013



Abstract: The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the

Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic

circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn) As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/(Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.

Addresses: [Nie, S. H.; Lu, J.; Meng, K. K.; Chen, L.; Zhu, L. J.; Pan, D.; Zhao, J. H.] Chinese Acad Sci,

State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

[Chin, Y. Y.; Lin, H. J.; Chen, C. T.] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan.

[Liu, W. Q.; Xu, Y. B.] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England.

[Tung, J. C.; Guo, G. Y.] Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 11605, Taiwan.

[Guo, G. Y.] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan.

[Yan, W. S.] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China.

Reprint Address: Guo, GY (reprint author), Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 11605,

Taiwan.

E-mail Addresses: gyguo@phys.ntu.edu.tw; jhzhao@red.semi.ac.cn

ISSN: 0031-9007

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Record 182 of 495

Title: Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor

(Ga,Mn)As

Author(s): Li, YY (Li, Yuanyuan); Cao, YF (Cao, Y. F.); Wei, GN (Wei, G. N.); Li, YY (Li, Yanyong); Ji, Y (Ji,

Y.); Wang, KY (Wang, K. Y.); Edmonds, KW (Edmonds, K. W.); Campion, RP (Campion, R. P.); Rushforth,

AW (Rushforth, A. W.); Foxon, CT (Foxon, C. T.); Gallagher, BL (Gallagher, B. L.)


10.1063/1.4813085 Published: JUL 8 2013



Abstract: Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Yuanyuan; Cao, Y. F.; Wei, G. N.; Li, Yanyong; Ji, Y.; Wang, K. Y.] Chinese Acad Sci, Inst

Semicond, SKLSM, Beijing 100083, Peoples R China.

[Edmonds, K. W.; Campion, R. P.; Rushforth, A. W.; Foxon, C. T.; Gallagher, B. L.] Univ Nottingham, Sch

Phys & Astron, Nottingham NG7 2RD, England.

Reprint Address: Li, YY (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing


E-mail Addresses: kywang@semi.ac.cn

ISSN: 0003-6951

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Record 183 of 495

Title: Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Author(s): Wang, J (Wang, Juan); Wang, GW (Wang, Guo-Wei); Xu, YQ (Xu, Ying-Qiang); Xing, JL (Xing,

Jun-Liang); Xiang, W (Xiang, Wei); Tang, B (Tang, Bao); Zhu, Y (Zhu, Yan); Ren, ZW (Ren, Zheng-Wei);

He, ZH (He, Zhen-Hong); Niu, ZC (Niu, Zhi-Chuan)


10.1063/1.4811443 Published: JUL 7 2013



Abstract: InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region

and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and

Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated.

The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 angstrom. The electron mobility has reached as high as 27 000 cm(2)/Vs with a sheet density of 4.54 x 10(11)/cm(2) at room temperature. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu,

Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: zcniu@semi.ac.cn

ISSN: 0021-8979

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Record 184 of 495

Title: Fabrication of SU8-based chip suitable for genomic sequencing

Author(s): Han, WJ (Han Wei-Jing); Wei, QQ (Wei Qing-Quan); Li, YT (Li Yun-Tao); Zhou, XG (Zhou

Xiao-Guang); Yu, YD (Yu Yu-De)


10.7498/aps.62.148701 Published: JUL 2013



Abstract: DNA sequencing technology has markedly advanced the development of biological and medicinal sciences. High-throughput pyrosequencing instruments that combine the pyrosequencing with microfabricated high-density picoliter reactors have been proved to be suitable for de novo sequencing and metagenome sequencing. In the present work, we report on an alternative sequencing chip consisting of hundreds of thousands of picoliter sized honeycombed SU8 reaction vessels on a fiber-optic slide by lithography technique for high-throughput pyrosequencing instruments. Highly reproducible fabrication process of SU8 sequencing chip is achieved through the improvement on SU8 film thickness uniformity and relaxation of SU8 residual stress during fabrication. To achieve the optical isolation required for SU8 reaction wells, metal film is selectively deposited on the side walls of the reaction vessels by reformating vacuum coating. With the metal coating, the average value of optical cross talking between SU8 reaction vessels is reduced from 25% to 1%. The SU8 sequencing chip demonstrates an excellent light transmission characteristic and meets the need of pyrosequencing application.

Addresses: [Han Wei-Jing; Wei Qing-Quan; Li Yun-Tao; Zhou Xiao-Guang; Yu Yu-De] Chinese Acad Sci,


[Han Wei-Jing; Wei Qing-Quan; Li Yun-Tao; Zhou Xiao-Guang; Yu Yu-De] Chinese Acad Sci, Inst

Semicnductorss, Joint Lab Bioinformat Acquisit & Sensing Technol, Beijing Inst Genom, Beijing 100083,

Peoples R China.




ISSN: 1000-3290

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Record 185 of 495

Title: Dynamics Maps and Scenario Transitions for a Semiconductor Laser Subject to Dual-Beam Optical

Injection

Author(s): AlMulla, M (AlMulla, Mohammad); Qi, XQ (Qi, Xiao-Qiong); Liu, JM (Liu, Jia-Ming)

Source: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Volume: 19 Issue:

4 Article Number: 1501108 DOI: 10.1109/JSTQE.2013.2239611 Published: JUL-AUG 2013



Abstract: Compared with single-beam injection, dual-beam optical injection increases the complexity and enriches the nonlinear dynamics of a semiconductor laser. The nonlinear dynamics of a dual-beam optically injected semiconductor laser system under various operating conditions are numerically studied

by comprehensive comparisons of the output spectra of single-beam injection and dual-beam injection.

Complete mapping of the different scenarios induced by dual-beam optical injection is shown for various combinations of detuning frequencies and injection strengths of the two injection beams. Complex dual-beam injection dynamics are mapped, and the dynamics in different scenarios are linked through transitional regions. Characteristics of the transition from one scenario to another are traced and analyzed by comparing the resonance frequency of each dual-beam injection optical spectrum with that of the dominant single-beam injection optical spectrum. Two different types of chaos, each following a period-doubling route, are identified in two different scenarios.

Addresses: [AlMulla, Mohammad; Liu, Jia-Ming] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles,

CA 90095 USA.

[Qi, Xiao-Qiong] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: AlMulla, M (reprint author), Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA

90095 USA.

E-mail Addresses: almulla@ucla.edu; qixiaqiong2002@yahoo.com.cn

ISSN: 1077-260X

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Record 186 of 495

Title: Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

Author(s): Feng, MX (Feng, Mei-Xin); Liu, JP (Liu, Jian-Ping); Zhang, SM (Zhang, Shu-Ming); Jiang, DS

(Jiang, De-Sheng); Li, ZC (Li, Zeng-Cheng); Li, DY (Li, De-Yao); Zhang, LQ (Zhang, Li-Qun); Wang, F

(Wang, Feng); Wang, H (Wang, Hui); Yang, H (Yang, Hui)





Abstract: Effects of an inserted InGaN interlayer between active region and p-AlGaN electron blocking layer on electrical and optical characteristics of GaN-based blue laser diodes are numerically investigated. It is found that the inserted InGaN interlayer reduces the barrier height for hole injection into multiple quantum wells. Moreover, it is found that the background electron concentration of the undoped

InGaN plays a critical role in the LD performance. A background electron concentration higher than 1 x

10(17) cm(-3) may induce undesired electron-hole recombination in this layer. In addition, we have calculated the dependences of optical confinement factor and internal absorption loss (IAL) on location,

In composition, and thickness of the InGaN layer. A significant increase in OCF and a decrease in IAL are obtained by inserting the InGaN layer.

Addresses: [Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Li, Zeng-Cheng; Li, De-Yao; Zhang, Li-Qun;

Wang, Feng; Wang, Hui; Yang, Hui] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123,

Peoples R China.

[Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Li, Zeng-Cheng; Li, De-Yao; Zhang, Li-Qun; Wang,

Feng; Wang, Hui; Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123,

Peoples R China.

[Feng, Mei-Xin; Jiang, De-Sheng] Chinese Acad Sci, Inst Semicond, Beijing 100803, Peoples R China.

Reprint Address: Feng, MX (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou



ISSN: 1077-260X

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Record 187 of 495

Title: Mode Analysis for Unidirectional Emission AlGaInAs/InP Octagonal Resonator Microlasers

Author(s): Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Long, H

(Long, Heng); Xiao, JL (Xiao, Jin-Long); Yao, QF (Yao, Qi-Feng); Lin, JD (Lin, Jian-Dong); Du, Y (Du,

Yun)





Abstract: We investigate mode characteristics for octagonal resonator microlasers directly connecting an output waveguide. The threshold current of 8 mA at 286 K and single-transverse-mode operation are realized for an octagonal resonator microlaser with a side length of 10.8 mu m and a 2-mu m-wide vertex output waveguide. The laser spectra of multiple longitudinal modes with mode wavelength intervals of

7-8 nm are observed accompanied with three weak, higher order transverse modes. Furthermore, blueshift of mode wavelength versus the injection current around the threshold current and the far-field patterns are measured and discussed. In addition, the mode characteristics of the octagonal microresonators are simulated by the two-dimensional finite-difference time-domain technique. Two sets of high-Q longitudinal modes are observed experimentally and numerically, for the octagonal resonators with the output waveguide connected to the vertex and the midpoint of one side of the resonators, respectively.

Addresses: [Zou, Ling-Xiu; Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Xiao, Jin-Long; Yao, Qi-Feng;

Lin, Jian-Dong; Du, Yun] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing


Reprint Address: Zou, LX (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst


E-mail Addresses: zoulingxiu@semi.ac.cn; lvxiaomeng@semi.ac.cn; yzhuang@semi.ac.cn; longheng@semi.ac.cn; jlxiao@mail.semi.ac.cn; qifengyao@semi.ac.cn; linjiandong@semi.ac.cn; duyun@semi.ac.cn

ISSN: 1077-260X

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Record 188 of 495

Title: Texture Evolution and Grain Competition in NiGe Film on Ge(001)

Author(s): Huang, W (Huang, Wei); Tang, MR (Tang, Mengrao); Wang, C (Wang, Chen); Li, C (Li, Cheng);

Li, J (Li, Jun); Chen, SY (Chen, Songyan); Xue, CL (Xue, Chunlai); Lai, HK (Lai, Hongkai)


10.7567/APEX.6.075505 Published: JUL 2013



Abstract: To understand the agglomeration mechanism of NiGe films grown on Ge(001), texture structures of NiGe films are revealed by X-ray pole figure measurement. Two preferred epitaxial orientations of the NiGe grains are identified to be NiGe(4 (5) over bar4) II Ge(001) NiGe[(1) over bar 01]

II Ge[110] and NiGe(130) II Ge(001) NiGe[002] II Ge[110]. The component of the first epitaxial alignment becomes dominating and the latter diminishing with increasing annealing temperature. The NiGe grains of the second epitaxial alignment are unstable and diminishing at high temperature due to the relatively higher interface/surface energy. The competition of grains with various epitaxial orientations has made a significant contribution to film agglomeration. (C) 2013 The Japan Society of Applied Physics

Addresses: [Huang, Wei; Tang, Mengrao; Wang, Chen; Li, Cheng; Li, Jun; Chen, Songyan; Lai, Hongkai]

Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China.

[Xue, Chunlai] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Huang, W (reprint author), Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen

361005, Fujian, Peoples R China.

E-mail Addresses: weihuang@xmu.edu.cn

ISSN: 1882-0778

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Record 189 of 495

Title: Pyramid Array InGaN/GaN Core-Shell Light Emitting Diodes with Homogeneous Multilayer

Graphene Electrodes

Author(s): Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Li, HJ (Li, Hongjian); Liu, ZQ (Liu, Zhiqiang); Li, X (Li,

Xiao); Yi, XY (Yi, Xiaoyan); Ma, P (Ma, Ping); Zhu, HW (Zhu, Hongwei); Wang, GH (Wang, Guohong)





Abstract: Pyramid array InGaN/GaN core-shell light-emitting diodes (LEDs) were fabricated by using a

highly homogeneous multilayer graphene transparent conducting electrode. This novel electrode exhibited excellent optical, structural, and electrical properties. In this design, graphene connected each pyramid array as a top window electrode. The current-driven pyramid array InGaN/GaN core-shell LED was operated at a low current injection and exhibited bright electroluminescence. Our results suggest that graphene offers excellent current spreading and transparent conductive properties for nano- or microscale devices. (c) 2013 The Japan Society of Applied Physics

Addresses: [Kang, Junjie; Li, Zhi; Li, Hongjian; Liu, Zhiqiang; Yi, Xiaoyan; Ma, Ping; Wang, Guohong]


China.

[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Dept Mech Engn, Key Lab Adv Mfg Mat Proc Technol, Beijing


Reprint Address: Kang, JJ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


ISSN: 1882-0778

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Record 190 of 495

Title: Photoinduced Spin Precession in Fe/GaAs(001) Heterostructure with Low Power Excitation

Author(s): Yuan, HC (Yuan, Haochen); Gao, HX (Gao, Haixia); Gong, Y (Gong, Yu); Lu, J (Lu, Jun);

Zhang, XH (Zhang, Xinhui); Zhao, JH (Zhao, Jianhua); Ren, YH (Ren, Yuhang); Zhao, HB (Zhao, Haibin);

Chen, LY (Chen, Liangyao)





Abstract: Pronounced spin precessions are observed in Fe films grown on n-doped GaAs(001) with a tailored Schottky interface under low-energy ultrafast laser excitation, more than two orders of magnitude smaller than typically required in heat-induced excitation. Pump wavelength dependence of the precession amplitude shows that the fast drift of the optically excited free carriers in the narrow depletion layer of GaAs is the key mechanism to generate the significant transient magnetic field triggering spin precessions. (C) 2013 The Japan Society of Applied Physics

Addresses: [Yuan, Haochen; Zhao, Haibin; Chen, Liangyao] Fudan Univ, Shanghai Ultra Precis Opt Mfg

Engn Res Ctr, Shanghai 200433, Peoples R China.

[Yuan, Haochen; Zhao, Haibin; Chen, Liangyao] Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist

Educ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China.

[Gao, Haixia; Lu, Jun; Zhang, Xinhui; Zhao, Jianhua] Inst Semicond, State Key Lab Superlattices &


[Gong, Yu; Ren, Yuhang] CUNY Hunter Coll, Dept Phys & Astron, New York, NY 10065 USA.

Reprint Address: Ren, YH (reprint author), CUNY Hunter Coll, Dept Phys & Astron, New York, NY 10065

USA.

E-mail Addresses: yre@hunter.cuny.edu; hbzhao@fudan.edu.cn

ISSN: 1882-0778

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Record 191 of 495

Title: Femtosecond Laser Pulse Induced Ultrafast Demagnetization in Fe/GaAs Thin Films

Author(s): Gong, Y (Gong, Y.); Kutayiah, AR (Kutayiah, A. R.); Cevher, Z (Cevher, Z.); Zhang, XH (Zhang,

X. H.); Zhao, JH (Zhao, J. H.); Ren, YH (Ren, Y. H.)

Source: IEEE TRANSACTIONS ON MAGNETICS Volume: 49 Issue: 7 Pages: 3199-3202 DOI:

10.1109/TMAG.2013.2240271 Published: JUL 2013



Abstract: As the magnetic storage density approaches 1 TB/in(2), a grand challenge is looming as how to read/write such a huge amount of data within a reasonable time. In this study, we demonstrate femtosecond demagnetization in 10-nm epitaxially grown Fe thin films by applying low-energy femtosecond laser pulses. We used time-resolved pump-probe Magneto Kerr Effect spectroscopy to record ultrafast laser induced demagnetization and its recovery. The demagnetization time was found to be 70 fs from the time-resolved hysteresis loops. The time scale is much shorter than the phonon

thermalization time. Our results show that the demagnetization can be completed before electron-phonon equilibration is achieved, and therefore indicate the feasibility of ultrafast optical control of demagnetization responses for next generation femtosecond-switching magnetic storage devices.

Addresses: [Gong, Y.; Kutayiah, A. R.; Cevher, Z.; Ren, Y. H.] CUNY, Hunter Coll, New York, NY 10065

USA.

[Gong, Y.; Cevher, Z.; Ren, Y. H.] CUNY, Grad Ctr, New York, NY 10016 USA.

[Zhang, X. H.; Zhao, J. H.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,


Reprint Address: Gong, Y (reprint author), CUNY, Hunter Coll, New York, NY 10065 USA.

E-mail Addresses: ygong@hunter.cuny.edu

ISSN: 0018-9464

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Record 192 of 495

Title: The research of the perpendicular magnetic anisotropy in CoFeB/AlOx/Ta and AlOx/CoFeB/Ta structures

Author(s): Chen, X (Chen Xi); Liu, HF (Liu Hou-Fang); Han, XF (Han Xiu-Feng); Ji, Y (Ji Yang)





Abstract: The perpendicular magnetic anisotropy (PMA) of the CoFeB/AlOx/Ta structure and the

AlOx/CoFeB/Ta structure with different thicknesses of both CoFeB and AlOx is studied. Magnetization curves show that the CoFeB/AlOx/Ta structure has a clear perpendicular magnetic easy axis while the

AlOx/CoFeB/Ta structure does not. The cause of the asymmetrical phenomenon in the symmetric structures is analyzed. Dependence of the perpendicular coercivities on the thicknesses of CoFeB and

AlOx shows that both of them can affect the strength of the PMA originating from the interfacial interaction. This work will be meaningful for the fabrication of the AlOx-based perpendicular magnetic tunnel junctions.

Addresses: [Chen Xi; Ji Yang] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


[Liu Hou-Fang; Han Xiu-Feng] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys,


Reprint Address: Ji, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


E-mail Addresses: jiyang@semi.ac.cn

ISSN: 1000-3290

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Record 193 of 495

Title: Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy

Author(s): Li, QQ (Li Qiao-Qiao); Han, WP (Han Wen-Peng); Zhao, WJ (Zhao Wei-Jie); Lu, Y (Lu Yan);

Zhang, X (Zhang Xin); Tan, PH (Tan Ping-Heng); Feng, ZH (Feng Zhi-Hong); Li, J (Li Jia)





Abstract: Raman spectroscopy has become a key way for characterizing and studying disorder in graphene, due to its nondestructive, rapid and sensitive technique. In this paper, ion implantation is used to produce the structural defects in single-layer graphene (SLG) and bi-layer graphene (BLG). The first-and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by

Raman spectroscopy. The dependence of dispersive frequency of first-and second-order modes in SLG and BLG on the excitation energy was discussed in detail. Results show that the similar to 2450 cm(-1) peak is the combination mode of the D mode at similar to 1350 cm(-1) and the D '' mode at similar to

1150 cm(-1).

Addresses: [Li Qiao-Qiao; Han Wen-Peng; Zhao Wei-Jie; Lu Yan; Zhang Xin; Tan Ping-Heng] Chinese

Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Feng Zhi-Hong; Li Jia] Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiazhuang 050051,

Peoples R China.




ISSN: 1000-3290

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Record 194 of 495

Title: Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Author(s): Zeng, ZQ (Zeng, Zhaoquan); Morgan, TA (Morgan, Timothy A.); Fan, DS (Fan, Dongsheng); Li,

C (Li, Chen); Hirono, Y (Hirono, Yusuke); Hu, X (Hu, Xian); Zhao, YF (Zhao, Yanfei); Lee, JS (Lee, Joon

Sue); Wang, J (Wang, Jian); Wang, ZMM (Wang, Zhiming M.); Yu, SQ (Yu, Shuiqing); Hawkridge, ME

(Hawkridge, Michael E.); Benamara, M (Benamara, Mourad); Salamo, GJ (Salamo, Gregory J.)


Published: JUL 2013



Abstract: High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs

(111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and

Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Addresses: [Zeng, Zhaoquan; Morgan, Timothy A.; Fan, Dongsheng; Li, Chen; Hirono, Yusuke; Hu, Xian;

Wang, Zhiming M.; Yu, Shuiqing; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J.] Univ

Arkansas, Arkansas Inst Nanoscale Mat Sci & Engn, Fayetteville, AR 72701 USA.

[Fan, Dongsheng; Yu, Shuiqing] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA.

[Zhao, Yanfei; Wang, Jian] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R

China.

[Lee, Joon Sue; Wang, Jian] Penn State Univ, Ctr Nanoscale Sci, University Pk, PA 16802 USA.

[Lee, Joon Sue; Wang, Jian] Penn State Univ, Dept Phys, University Pk, PA 16802 USA.

[Wang, Zhiming M.] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic,

Chengdu 610054, Peoples R China.

[Wang, Zhiming M.] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol,


Reprint Address: Wang, J (reprint author), Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871,

Peoples R China.

E-mail Addresses: jianwangphysics@pku.edu.cn; zhmwang@semi.ac.cn

ISSN: 2158-3226

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Record 195 of 495

Title: Selectable infiltrating large hollow core photonic band-gap fiber

Author(s): Liu, JG (Liu JianGuo); Du, YX (Du YuanXin); Zhu, NH (Zhu NingHua); Liu, FM (Liu FengMei)

Source: CHINESE SCIENCE BULLETIN Volume: 58 Issue: 21 Special Issue: SI Pages:

2606-2610 DOI: 10.1007/s11434-012-5549-5 Published: JUL 2013



Abstract: A selectable infiltrating large hollow core photonic band-gap fiber is fabricated with simple arc discharge technique. The offset, discharge duration, arc current and discharge times are optimized for selected sealing side air-holes but leave the central large air-hole partially open. The collapse length of the PCF is shortened by increasing the number of discharges and offset with discharge duration and arc

current kept at a relatively low level. Light with the wavelength located at the photonic band-gap can still propagate while the central hollow air-hole is infiltrated with a kind of oil with refractive index of 1.30. The selectable infiltrating large hollow core photonic band-gap fiber has potential application for implementing novel lasers, sensors and tunable optoelectronic devices.

Addresses: [Liu JianGuo; Du YuanXin; Zhu NingHua] Chinese Acad Sci, Inst Semicond, State Key Lab


[Liu FengMei] Haidian Maternal & Child Hlth Hosp, Beijing 100080, Peoples R China.

Reprint Address: Liu, JG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: jgliu@semi.ac.cn

ISSN: 1001-6538

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Record 196 of 495

Title: High-sensitive and temperature-self-calibrated tilted fiber grating biological sensing probe

Author(s): Liu, F (Liu Fu); Guo, T (Guo Tuan); Liu, JG (Liu JianGuo); Zhu, XY (Zhu XiaoYang); Liu, Y (Liu

Yu); Guan, BO (Guan BaiOu); Albert, J (Albert, Jacques)





Abstract: High sensitivity biological sample measurement has been achieved by using a 10A degrees tilted fiber Bragg grating sensing probe. Human acute leukemia cells with different intracellular densities were clearly discriminated by identifying their slight refraction index (RI) perturbations in the range from

1.3342 to 1.3344, combining with a temperature self-calibration property. We studied the relationship between the intracellular density of cells (S50 and S60) and their RIs, the experimental results provide a potential way to verify the hypothesis for "density alteration in non-physiological cells (DANCE)".

Addresses: [Liu Fu; Guo Tuan; Guan BaiOu] Jinan Univ, Inst Photon Technol, Guangzhou 510632,


[Liu JianGuo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Zhu XiaoYang; Liu Yu] Jinan Univ, Sch Med, Dept Biochem, Guangzhou 510632, Guangdong, Peoples

R China.

[Albert, Jacques] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada.

Reprint Address: Guo, T (reprint author), Jinan Univ, Inst Photon Technol, Guangzhou 510632,


E-mail Addresses: tuanguo@jnu.edu.cn

ISSN: 1001-6538

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Record 197 of 495

Title: Tween-modified suspension array for sensitive biomolecular detection

Author(s): Zhao, ZA (Zhao Zhuan); Li, Z (Li Zong); Li, J (Li Jiong)





Abstract: Suspension arrays are attracting increasing interest for detecting and quantifying proteins, nucleic acids and other biomolecules. Among various suspension arrays, sillica-based suspension arrays which benefit from low fluorescence background and material stability have been widely used.

Sillica-based suspension arrays are often manufactured with the popular aldehyde-aminosilane chemistry for the attachment of a variety of biomolecules. One drawback of this immobilization strategies is the relatively high array particles lost efficiency when washed by centrifugation. Due to this shortcoming, it is low reproductivity and limited in multiplex assay. Herein we report a novel method to fabricate Tween-coated suspension sillica particles, which could achieve good-reproductivity and the low limit of detection. Tween surfactants, each containing hydrophilic ethylene glycol head groups and a hydrophobic alkyl tail, prevent silica particles from being adsorbed onto the centrifuge tube wall and make beads resuspended well. Also, Tween with low fluorescence background could reduce non-specific protein adsorption. Also Tween surfactants are economic and facile agent. In this study, we demonstrate

the preparation of the protein array to substantiate the applicability of our approach. Under the optimized experiment conditions, the limit of detection of our Tween-modified particles is as low as 50 pg/mL, which is sufficiently low for the current methods. We believe that the proposed method could provide a perspective on the improvement of self-encoded silica particle arrays.

Addresses: [Zhao Zhuan; Li Zong; Li Jiong] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div

Nanobiomed, Suzhou 215123, Peoples R China.

[Zhao Zhuan] Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.

[Zhao Zhuan; Li Zong] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China.

[Li Zong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Li, J (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div

Nanobiomed, Suzhou 215123, Peoples R China.

E-mail Addresses: jli2006@sinano.ac.cn

ISSN: 1001-6538

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Record 198 of 495

Title: Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

Author(s): Wang, JX (Wang Jian-Xia); Yang, SY (Yang Shao-Yan); Wang, J (Wang Jun); Liu, GP (Liu

Gui-Peng); Li, ZW (Li Zhi-Wei); Li, HJ (Li Hui-Jie); Jin, DD (Jin Dong-Dong); Liu, XL (Liu Xiang-Lin)


10.1088/1674-1056/22/7/077305 Published: JUL 2013



Abstract: The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

Addresses: [Wang Jian-Xia; Yang Shao-Yan; Wang Jun; Liu Gui-Peng; Li Zhi-Wei; Li Hui-Jie; Jin

Dong-Dong; Liu Xiang-Lin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


Reprint Address: Yang, SY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: jxwang2009@semi.ac; sh-yyang@semi.ac.cn

ISSN: 1674-1056

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Record 199 of 495

Title: Tuning Properties of External Cavity Violet Semiconductor Laser

Author(s): Lv, XQ (Lv Xue-Qin); Chen, SW (Chen Shao-Wei); Zhang, JY (Zhang Jiang-Yong); Ying, LY

(Ying Lei-Ying); Zhang, BP (Zhang Bao-Ping)


10.1088/0256-307X/30/7/074204 Published: JUL 2013



Abstract: A tunable grating-coupled external cavity (EC) laser is realized by employing a GaN-based laser diode as the gain device. A tuning range of 4.47 nm from 403.82 to 408.29 nm is achieved. Detailed investigations reveal that the injection current strongly influences the performance of the EC laser. Below the free-running lasing threshold, EC laser works stably. While above the free-running lasing threshold, a

Fabry-Perot (F-P) resonance peak in the emission spectrum and a smooth kink in the output power-injection current characteristic curve are observed, suggesting the competition between the inner

F-P cavity resonance and EC resonance. Furthermore, the tuning range is found to be asymmetric and occurs predominantly on the longer wavelength side. This is interpreted in terms of the asymmetric gain distribution of GaN-based quantum well material.

Addresses: [Lv Xue-Qin] Xiamen Univ, Pen Tung Sah Inst Micronano Sci & Technol, Xiamen 361005,

Peoples R China.

[Chen Shao-Wei] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.

[Zhang Jiang-Yong; Ying Lei-Ying; Zhang Bao-Ping] Xiamen Univ, Dept Elect Engn, Xiamen 361005,

Peoples R China.

[Lv Xue-Qin] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R

China.

Reprint Address: Zhang, BP (reprint author), Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R

China.

E-mail Addresses: bzhang@xmu.edu.cn

ISSN: 0256-307X

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Record 200 of 495

Title: Advanced rechargeable lithium-ion

ZnCo2O4-urchins-on-carbon-fibers electrodes batteries based on bendable

Author(s): Liu, B (Liu, Bin); Wang, XF (Wang, Xianfu); Liu, BY (Liu, Boyang); Wang, QF (Wang, Qiufan);

Tan, DS (Tan, Dongsheng); Song, WF (Song, Weifeng); Hou, XJ (Hou, Xiaojuan); Chen, D (Chen, Di);

Shen, GZ (Shen, Guozhen)

Source: NANO RESEARCH Volume: 6 Issue: 7 Pages: 525-534 DOI:

10.1007/s12274-013-0329-3 Published: JUL 2013



Abstract: A novel class of ZnCo2O4-urchins-on-carbon-fibers matrix has been designed, characterized, and used to fabricate high-performance energy storage devices. We obtained a reversible lithium storage capacity of 1180 mA center dot h/g even after 100 cycles, demonstrating the highreversible capacity and excellent cycle life of the as-prepared samples. Tested as fast-charging batteries, these electrodes exhibited a considerable capacity of 750 mA center dot h/g at an exceptionally high rate of 20 C (18 A/g), with an excellent cycle life (as long as 100 cycles), which are the best high-rate results reported at such a high charge/discharge current density for ZnCo2O4-based anode materials in lithium rechargeable batteries. Such attractive properties may be attributed to the unique structure of the binder-free

ZnCo2O4-urchins-on-carbon-fibers matrix. Full batteries were also developed by combining the

ZnCo2O4 anodes with commercial LiCoO2 cathodes, which showed flexible/wearable and stable features for use as very promising future energy storage units.

Addresses: [Liu, Bin; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


[Liu, Bin; Wang, Xianfu; Liu, Boyang; Wang, Qiufan; Tan, Dongsheng; Song, Weifeng; Hou, Xiaojuan;

Chen, Di] Huazhong Univ Sci & Technol HUST, WNLO, Wuhan 430074, Peoples R China.

[Liu, Bin; Wang, Xianfu; Liu, Boyang; Wang, Qiufan; Tan, Dongsheng; Song, Weifeng; Hou, Xiaojuan;

Chen, Di] Huazhong Univ Sci & Technol HUST, Coll Opt & Elect Informat, Wuhan 430074, Peoples R

China.




ISSN: 1998-0124

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Record 201 of 495

Title: The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers

Author(s): Li, YF (Li, YanFang); Wang, J (Wang, Jian); Yang, N (Yang, Ning); Liu, JQ (Liu, Junqi); Wang,

T (Wang, Tao); Liu, FQ (Liu, Fengqi); Wang, ZG (Wang, Zhanguo); Chu, WD (Chu, Weidong); Duan, SQ

(Duan, Suqing)


10.1364/OE.21.015998 Published: JUL 1 2013



Abstract: We report on Terahertz quantum cascade lasers with tapered waveguide structure operating at similar to 103 mu m. The tapered waveguide effect on the output power and the laser beam divergence are experimentally studied with the tapered angle ranging from 0 degrees to 8 degrees. It is found that

the peak output power of the devices with same length reaches the maximum at about 5 degrees similar to 6 degrees tapered angle. Meanwhile, the horizontal divergence angle of the laser beam can be greatly reduced. The existence of such optimal tapered angle is explained by the finite-element simulation with the consideration of the self-focusing effect for the devices with larger tapered angle. (C) 2013 Optical

Society of America

Addresses: [Li, YanFang; Yang, Ning; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo; Chu, Weidong;

Duan, Suqing] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Li, YanFang; Yang, Ning; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo; Chu, Weidong; Duan,

Suqing] Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China.

[Wang, Jian] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China.

Reprint Address: Yang, N (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: yang_ning@iapcm.ac.cn; jqliu@semi.ac.cn

ISSN: 1094-4087

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Record 202 of 495

Title: Analysis of vertical radiation loss and far-field pattern for microcylinder lasers with an output waveguide

Author(s): Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Long, H

(Long, Heng); Zou, LX (Zou, Ling-Xiu); Yao, QF (Yao, Qi-Feng); Jin, X (Jin, Xin); Xiao, JL (Xiao, Jin-Long);

Du, Y (Du, Yun)


10.1364/OE.21.016069 Published: JUL 1 2013



Abstract: Vertical radiation loss and far-field pattern are investigated for microcylinder lasers by 3D FDTD simulation and experimentally. The numerical results show that an output waveguide connected to the microcylinder resonator can result in additional vertical radiation loss for high Q coupled modes and affect the far field pattern. The vertical radiation loss can be controlled by adjusting the up cladding layer thickness. Furthermore, two lobes of vertical far-field patterns are observed for a 15-mu m-radius microcylinder laser connected with an output waveguide, which confirms the vertical radiation loss.

(C)2013 Optical Society of America

Addresses: [Lv, Xiao-Meng; Huang, Yong-Zhen; Yang, Yue-De; Long, Heng; Zou, Ling-Xiu; Yao, Qi-Feng;

Jin, Xin; Xiao, Jin-Long; Du, Yun] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,


Reprint Address: Lv, XM (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1094-4087

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Record 203 of 495

Title: Theoretical investigation of a highly efficient nanograting for outcoupling XUV

Author(s): Yang, YY (Yang, Ying-Ying); Yu, HJ (Yu, Hai-Juan); Zhang, L (Zhang, Ling); Lin, XC (Lin,

Xue-Chun)

Source: LASER PHYSICS LETTERS Volume: 10 Issue: 7 Article Number: 075302 DOI:

10.1088/1612-2011/10/7/075302 Published: JUL 2013



Abstract: A highly efficient nano-periodical blazed grating is fully theoretically investigated for outcoupling extreme ultraviolet (XUV) radiation. Rigorous coupled-wave analysis (RCWA) with the S matrix method is employed to optimize the parameters of the grating. The grating is designed to be etched on the top layers of an IR reflector, performing as a highly reflective mirror for IR light and a highly efficient outcoupler for XUV. The diffraction efficiency of the -1 order of this XUV outcoupler is greater than 20% in the range near 60 nm, which allows high-resolution spectroscopy of the 1s-2s transition in He+ at around

60 nm with extreme precision. The theoretical calculations are consistent with the experimental data.

Addresses: [Yang, Ying-Ying; Yu, Hai-Juan; Zhang, Ling; Lin, Xue-Chun] Chinese Acad Sci, Lab Solid

State Laser Sources, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Yang, YY (reprint author), Chinese Acad Sci, Lab Solid State Laser Sources, Inst


E-mail Addresses: yangyy@semi.ac.cn; xclin@semi.ac.cn

ISSN: 1612-2011

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Record 204 of 495

Title: Tunable DFB fiber laser based on photo-thermal effects

Author(s): Zhao, Q (Zhao, Q.); Wang, YJ (Wang, Y. J.); Xu, TW (Xu, T. W.); Dai, X (Dai, X.); Li, F (Li, F.);

Qu, Y (Qu, Y.)


10.1088/1612-2011/10/7/075105 Published: JUL 2013



Abstract: A novel DFB fiber laser frequency tuning method involving introduction of a photo-thermal light resource into an optical fiber laser system is proposed. A theoretical analysis has been made and experiments have been done. The test results show that the static and dynamic frequency tuning range is about 112 MHz/100 mA and the tuning rate is more than 2 kHz. This method gives a simple way of achieving both relatively high dynamic tuning range and high tuning speed.

Addresses: [Zhao, Q.; Dai, X.; Qu, Y.] Changchun Univ Sci & Technol, Natl Key Lab High Power

Semicond Lasers, Changchun 130022, Jilin, Peoples R China.

[Zhao, Q.; Wang, Y. J.; Xu, T. W.; Dai, X.; Li, F.] Chinese Acad Sci, Optoelect Syst Lab, Inst Semicond,


Reprint Address: Zhao, Q (reprint author), Changchun Univ Sci & Technol, Natl Key Lab High Power


E-mail Addresses: zqhero9494@163.com; wyj@semi.ac.cn; xutuanwei@semi.ac.cn; daixing@semi.ac.cn; lifang@semi.ac.cn; quyi@cust.edu.cn

ISSN: 1612-2011

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Record 205 of 495

Title: Silicon-on-insulator-based adiabatic splitter with simultaneous tapering of velocity and coupling

Author(s): Xing, JJ (Xing, Jiejiang); Xiong, K (Xiong, Kang); Xu, H (Xu, Hao); Li, ZY (Li, Zhiyong); Xiao, X

(Xiao, Xi); Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)


Published: JUL 1 2013



Abstract: We propose and experimentally demonstrate a 2 x 2 3 dB adiabatic splitter based on silicon-on-insulator technology, with simultaneous tapering of the phase velocity and coupling. The advantages of the proposed splitter are indicated by analyzing the effective index evolution of the system modes and comparing them with the simulated performances. The experimental results are in good agreement with the simulations. Over the 100 nm wavelength range measured, the output uniformity is better than 0.2 dB. A low and flat excess loss of about 0.3 dB per splitter is obtained, with a variation below 0.2 dB. (C) 2013 Optical Society of America

Addresses: [Xing, Jiejiang; Xiong, Kang; Xu, Hao; Li, Zhiyong; Xiao, Xi; Yu, Jinzhong; Yu, Yude] Chinese





ISSN: 0146-9592

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Record 206 of 495

Title: A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

Author(s): Yan, S (Yan, S.); Yan, X (Yan, X.); Yu, H (Yu, H.); Zhang, L (Zhang, L.); Guo, L (Guo, L.); Sun,

W (Sun, W.); Hou, W (Hou, W.); Lin, X (Lin, X.)


10.1088/1054-660X/23/7/075302 Published: JUL 2013



Abstract: We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO4 oscillator, followed by an 880 nm diode-pumped Nd:YVO4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M-2 were measured to be M-x(2) = 1.2 and M-y(2) = 1.19, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification.

Addresses: [Yan, S.; Yan, X.; Yu, H.; Zhang, L.; Guo, L.; Sun, W.; Hou, W.; Lin, X.] Chinese Acad Sci, Inst

Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

Reprint Address: Yan, S (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light


E-mail Addresses: xclin@semi.ac.cn

ISSN: 1054-660X

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Record 207 of 495

Title: ULTRAFAST ELECTRON SPIN DYNAMICS OF AS-GROWN Ga1-xMnxAs WITH APPROPRIATE

Mn DOPING

Author(s): Yue, H (Yue, Han)

Source: MODERN PHYSICS LETTERS B Volume: 27 Issue: 16 Article Number: 1350124 DOI:

10.1142/S0217984913501248 Published: JUN 30 2013



Abstract: The electron spin dynamics in the as-grown Ga1-xMnxAs films with appropriate Mn doping of x similar to 2-5% is studied using time-resolved magneto-optical Kerr effect measurements. Due to the existence of Mn interstitials, the s-d exchange scattering is found to play an important role for the as-grown Ga1-xMnxAs, and compete with p-d exchange coupling to dominate the electron spin relaxation process. The contribution of electron-electron Coulomb scattering to the electron spin dynamics for the as-grown Ga1-xMnxAs appears to be as important as that of the annealed ones. Our findings are fundamentally important for better understanding the electron spin dynamics in Ga1-xMnxAs for its future spintronic applications.

Addresses: Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Yue, H (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct,


E-mail Addresses: yuehan@semi.ac.cn

ISSN: 0217-9849

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Record 208 of 495

Title: Shape designing for light extraction enhancement bulk-GaN light-emitting diodes

Author(s): Sun, B (Sun, Bo); Zhao, LX (Zhao, Lixia); Wei, TB (Wei, Tongbo); Yi, XY (Yi, Xiaoyan); Liu, ZQ

(Liu, Zhiqiang); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)


10.1063/1.4812464 Published: JUN 28 2013



Abstract: Light extraction efficiency enhancement of bulk GaN light-emitting diodes (LEDs) in the shape of truncated-pyramid has been investigated. Compared with the reference LEDs, an enhancement of up to 46% on the light output power from rectangle-shaped LEDs chip with the inclination angle (similar to

44 degrees) has been observed. Compared with the common triangle-shaped and hexagon-shaped

LEDs, large size of conventional rectangular LEDs shaped with truncated-pyramid shows more obvious enhancement in light extraction efficiency. In addition, the ray-tracing simulations results show that light

extraction efficiency was influenced not only by inclination angle but also by dimension size. (C) 2013 AIP

Publishing LLC.

Addresses: [Sun, Bo; Zhao, Lixia; Wei, Tongbo; Yi, Xiaoyan; Liu, Zhiqiang; Wang, Guohong; Li, Jinmin]


China.

[Sun, Bo] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Sun, B (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


E-mail Addresses: lxzhao@semi.ac.cn; tbwei@semi.ac.cn

ISSN: 0021-8979

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Record 209 of 495

Title: Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed

N-Polar n-Type GaN

Author(s): Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Guo, EQ (Guo, Enqing); Yang, H (Yang,

Hua); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 5 Issue: 12 Pages: 5797-5803 DOI:

10.1021/am401354z Published: JUN 26 2013



Abstract: The electrical characteristics of metallization contacts to flat (F-sample, without wet-etching roughed) and wet-etching roughed (R-sample) N-polar (Nitrogen-polar) n-GaN have been investigated.

R-sample shows higher contact resistance (R-c) to Al/Ti/Au (similar to 2.5 x 10(-5) Omega.cm(2)) and higher Schottky barriers height (SBH, similar to 0.386 eV) to Ni/Au, compared with that of F-sample

(similar to 1.3 x 10(-6) Omega.cm(2), similar to 0.154 eV). Reasons accounting for this discrepancy has been detail investigated and discussed: for R-sample, wet-etching process caused surface state and spontaneous polarization variation will degraded its electrical characteristics. Metal on R-sample shows smoother morphology, however, the effect of metal deposition state on electrical characteristics is negligible. Metallization contact area for both samples has also been further considered. Electrical characteristics of metallization contact to both samples show degradation upon annealing. The VLED chip (1 mm x 1 mm), which was fabricated on the basis of a hybrid scheme, coupling the advantage of F- and R-sample, shows the lowest forward voltage (2.75 V@350 mA) and the highest light output power.

Addresses: [Wang, Liancheng; Liu, Zhiqiang; Guo, Enqing; Yang, Hua; Yi, Xiaoyan; Wang, Guohong]


China.



E-mail Addresses: wanglc@semi.ac.cn; spring@semi.ac.cn

ISSN: 1944-8244

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Record 210 of 495

Title: In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces

Author(s): Wu, SJ (Wu, Shujie); Chen, YH (Chen, Yonghai); Yu, JL (Yu, Jinling); Gao, HS (Gao, Hansong);

Jiang, CY (Jiang, Chongyun); Huang, JL (Huang, Jianliang); Zhang, YH (Zhang, Yanhua); Wei, Y (Wei,

Yang); Ma, WQ (Ma, Wenquan)


10.1186/1556-276X-8-298 Published: JUN 25 2013



Abstract: The in-plane optical anisotropy (IPOA) in InAs/GaSb superlattices has been studied by reflectance difference spectroscopy (RDS) at different temperatures ranging from 80 to 300 K. We introduce alternate GaAs- and InSb-like interfaces (IFs), which cause the symmetry reduced from D (2d) to C (2v) . IPOA has been observed in the (001) plane along [110] and [10] axes. RDS measurement results show strong anisotropy resonance near critical point (CP) energies of InAs and GaSb. The energy positions show red shift and RDS intensity decreases with the increasing temperature. For the superlattice sample with the thicker InSb-like IFs, energy positions show red shift, and the spectra exhibit

stronger IPOA. The excitonic effect is clearly observed by RDS at low temperatures. It demonstrates that biaxial strain results in the shift of the CP energies and IPOA is enhanced by the further localization of the carriers in InSb-like IFs.

Addresses: [Wu, Shujie; Chen, Yonghai; Yu, Jinling; Gao, Hansong; Jiang, Chongyun] Chinese Acad Sci,


[Wu, Shujie; Chen, Yonghai; Yu, Jinling; Gao, Hansong; Jiang, Chongyun] Chinese Acad Sci, Beijing Key

Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Beijing 100083, Peoples R China.

[Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Ma, Wenquan] Chinese Acad Sci, Inst Semicond, Lab

Nanooptoelect, Beijing 100083, Peoples R China.

Reprint Address: Chen, YH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: yhchen@semi.ac.cn

ISSN: 1931-7573

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Record 211 of 495

Title: Controlling edge state transport in a HgTe topological insulator by superlattice effect

Author(s): Lin, LZ (Lin, L. -Z.); Cheng, F (Cheng, F.); Zhang, LB (Zhang, L. B.); Zhang, D (Zhang, D.);

Yang, W (Yang, Wen)


10.1103/PhysRevB.87.245311 Published: JUN 24 2013



Abstract: We investigate theoretically the edge state transport in a HgTe topological insulator under periodic electrical modulation. We find constructive interference of the backscattering amplitudes, leading to the formation of superlattice minigaps and hence complete suppression of the edge state transmission.

Consequently, the edge channel can be switched on/off by appropriately tuning the modulation amplitude via gate voltages, even for wide Hall bar with a small finite size effect. We also find efficient conversion between spin-up and spin-down edge channels by the gate-induced Rashba spin-orbit interaction.

Addresses: [Lin, L. -Z.; Zhang, D.] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R

China.

[Cheng, F.] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R

China.

[Zhang, L. B.] Hunan Normal Univ, Dept Phys, Changsha 410012, Hunan, Peoples R China.

[Yang, Wen] Beijing Computat Sci Res Ctr, Beijing 100089, Peoples R China.

Reprint Address: Lin, LZ (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing


E-mail Addresses: lzlin@semi.ac.cn; wenyang@csrc.ac.cn

ISSN: 1098-0121

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Record 212 of 495

Title: The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes

Author(s): Li, Z (Li, Zhi); Kang, JJ (Kang, Junjie); Zhang, YY (Zhang, Yiyun); Liu, ZQ (Liu, Zhiqiang);

Wang, LC (Wang, Liancheng); Lee, X (Lee, Xiao); Li, X (Li, Xiao); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu,

Hongwei); Wang, GH (Wang, Guohong)


10.1063/1.4811224 Published: JUN 21 2013



Abstract: GaN-based nanorod light-emitting diodes (LEDs) with multilayer graphene (MLG) transparent electrodes have been fabricated. Two types of nano-LEDs with graphene on and under the metal pads are fabricated and their performances are investigated. And LEDs with graphene on the metal-pads exhibiting lower forward voltage and higher electroluminescence intensity are obtained. Using scanning electron microscope and Raman spectroscopy, we have demonstrated that graphene transferred after the metal deposition remains intact and has much less damages than graphene under the metal during the fabrication of LEDs with nanorods. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Zhi; Kang, Junjie; Zhang, Yiyun; Liu, Zhiqiang; Wang, Liancheng; Yi, Xiaoyan; Wang,

Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083,

Peoples R China.

[Lee, Xiao; Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R

China.

[Lee, Xiao; Zhu, Hongwei] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.

Reprint Address: Liu, ZQ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


E-mail Addresses: lzq@semi.ac.cn; hongweizhu@tsinghua.edu.cn

ISSN: 0021-8979

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Record 213 of 495

Title: Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler alloy films

Author(s): Qiao, S (Qiao, Shuang); Nie, SH (Nie, Shuaihua); Zhao, JH (Zhao, Jianhua); Zhang, XH

(Zhang, Xinhui)


10.1063/1.4811688 Published: JUN 21 2013



Abstract: The structural and magnetic properties of a series of Co2FeAl Heusler alloy films grown on

GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co2FeAl films with an ordered L-21 structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L-21 structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy. (C) 2013 AIP Publishing LLC.

Addresses: [Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui] Chinese Acad Sci, Inst


Reprint Address: Zhang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab



ISSN: 0021-8979

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Record 214 of 495

Title: Design and experimental verification for optical module of optical vector-matrix multiplier

Author(s): Zhu, WW (Zhu, Weiwei); Zhang, L (Zhang, Lei); Lu, YY (Lu, Yangyang); Zhou, P (Zhou, Ping);

Yang, L (Yang, Lin)


Published: JUN 20 2013



Abstract: Optical computing is a new method to implement signal processing functions. The multiplication between a vector and a matrix is an important arithmetic algorithm in the signal processing domain. The optical vector-matrix multiplier (OVMM) is an optoelectronic system to carry out this operation, which consists of an electronic module and an optical module. In this paper, we propose an optical module for

OVMM. To eliminate the cross talk and make full use of the optical elements, an elaborately designed structure that involves spherical lenses and cylindrical lenses is utilized in this optical system. The optical design software package ZEMAX is used to optimize the parameters and simulate the whole system.

Finally, experimental data is obtained through experiments to evaluate the overall performance of the system. The results of both simulation and experiment indicate that the system constructed can implement the multiplication between a matrix with dimensions of 16 by 16 and a vector with a dimension of 16 successfully. (C) 2013 Optical Society of America

Addresses: [Zhu, Weiwei; Zhang, Lei; Lu, Yangyang; Zhou, Ping; Yang, Lin] Chinese Acad Sci, Inst


Reprint Address: Yang, L (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1559-128X

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Record 215 of 495

Title: TiO2 modified FeS Nanostructures with Enhanced Electrochemical Performance for Lithium-Ion

Batteries

Author(s): Wang, XF (Wang, Xianfu); Xiang, QY (Xiang, Qingyi); Liu, B (Liu, Bin); Wang, LJ (Wang, Lijing);

Luo, T (Luo, Tao); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)





Abstract: Anatase TiO2 modified FeS nanowires assembled by numerous nanosheets were synthesized by using a typical hydrothermal method. The carbon-free nanocoated composite electrodes exhibit improved reversible capacity of 510 mAh g(-1) after 100 discharge/charge cycles at 200 mA g(-1), much higher than that of the pristine FeS nanostructures, and long-term cycling stability with little performance degradation even after 500 discharge/charge cycles at current density of 400 mA g(-1). Full batteries fabricated using the FeS@ TiO2 nanostructures anode and the LiMn2O4 nanowires cathode with excellent stability, and good rate capacities could also be achieved. The enhanced electrochemical performance of the composite electrodes can be attributed to the improved conductively of the integrated electrodes and the enhanced kinetics of lithium insertion/extraction at the electrode/electrolyte interface because of the incorporation of anatase TiO2 phase.

Addresses: [Wang, Xianfu; Xiang, Qingyi; Liu, Bin; Wang, Lijing; Luo, Tao; Chen, Di] HUST, WNLO,

Wuhan 430074, Peoples R China.

[Wang, Xianfu; Xiang, Qingyi; Liu, Bin; Wang, Lijing; Luo, Tao; Chen, Di] HUST, Sch Opt & Elect Informat,


[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing





ISSN: 2045-2322

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Record 216 of 495

Title: 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Author(s): Dong, P (Dong, Peng); Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi); Zhang, Y (Zhang,

Yun); Geng, C (Geng, Chong); Wei, TB (Wei, Tongbo); Cong, PP (Cong, Peipei); Zhang, YY (Zhang,

Yiyun); Zeng, JP (Zeng, Jianping); Tian, YD (Tian, Yingdong); Sun, LL (Sun, Lili); Yan, QF (Yan,

Qingfeng); Li, JM (Li, Jinmin); Fan, SF (Fan, Shunfei); Qin, ZX (Qin, Zhixin)


10.1063/1.4812237 Published: JUN 17 2013



Abstract: We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The

AlN coalescence thickness on NPSS is only 3 mu m due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a

282-nm UV-LED reaches 3.03mW at 20mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency. (C) 2013 AIP Publishing LLC.

Addresses: [Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Wei, Tongbo; Cong, Peipei; Zhang,

Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond

Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Geng, Chong; Yan, Qingfeng] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China.

[Fan, Shunfei; Qin, Zhixin] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys,


Reprint Address: Yan, JC (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


E-mail Addresses: yanjc@semi.ac.cn

ISSN: 0003-6951

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Record 217 of 495

Title: Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al,Ga)As superlattice at room temperature

Author(s): Huang, YY (Huang, Yuyang); Li, W (Li, Wen); Ma, WQ (Ma, Wenquan); Qin, H (Qin, Hua);

Grahn, HT (Grahn, Holger T.); Zhang, YH (Zhang, Yaohui)


10.1063/1.4811358 Published: JUN 17 2013



Abstract: We have experimentally observed spontaneous quasi-periodic current self-oscillations at room temperature in a doped, weakly coupled GaAs/(Al,Ga)As superlattice (SL) with 50 periods, 7 nm well width, and 4 nm barrier width. The mole fraction of the aluminum in the barrier has been chosen to be

0.45 so that the direct barrier at the Gamma point is as high as possible and thermal carrier leakage through the X valley is as small as possible. A spectral analysis of the current self-oscillations, which are observed under DC voltage bias alone, demonstrates that spontaneous quasi-periodic oscillation modes coexist with periodic ones. (C) 2013 AIP Publishing LLC.

Addresses: [Huang, Yuyang; Li, Wen; Qin, Hua; Zhang, Yaohui] Chinese Acad Sci, Suzhou Inst

Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Ma, Wenquan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Grahn, Holger T.] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany.

Reprint Address: Huang, YY (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398

Ruoshui Rd, Suzhou 215123, Peoples R China.

E-mail Addresses: yhzhang2006@sinano.ac.cn

ISSN: 0003-6951

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Record 218 of 495

Title: Bidirectional grating coupler based optical modulator for low-loss Integration and low-cost fiber packaging

Author(s): Zhang, ZY (Zhang, Zanyun); Huang, BJ (Huang, Beiju); Zhang, Z (Zhang, Zan); Cheng, CT



10.1364/OE.21.014202 Published: JUN 17 2013



Abstract: We proposed and demonstrated a novel optical modulator based on a bidirectional grating coupler designed for perfectly vertical fiber coupling. The grating functions as the fiber coupler and 3-dB splitter. To observe the interference, an arm difference of 30 mu m is introduced. As a result of the high coupling efficiency and near perfect split ratio of the grating coupler, this device exhibits a low on-chip insertion loss of 5.4dB (coupling loss included) and high on-off extinction ratio more than 20dB. The modulation efficiency is estimated to be within 3-3.84V.cm. In order to investigate the fiber misalignment tolerance of this modulator, misalignment influence of the static characteristics is analyzed. 10Gb/s Data transmission experiments of this device are performed with different fiber launch positions. The energy efficiency is estimated to be 8.1pJ/bit. (C) 2013 Optical Society of America

Addresses: [Zhang, Zanyun; Huang, Beiju; Zhang, Zan; Cheng, Chuantong; Chen, Hongda] Chinese


[Huang, Beiju] Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084,

Peoples R China.

Reprint Address: Zhang, ZY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: bjhuang@semi.ac.cn

ISSN: 1094-4087

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Record 219 of 495

Title: Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

Author(s): Yuan, LJ (Yuan, Lijun); Tao, L (Tao, Li); Yu, HY (Yu, Hongyan); Chen, WX (Chen, Weixi); Lu, D

(Lu, Dan); Li, YP (Li, Yanping); Ran, GZ (Ran, Guangzhao); Pan, JQ (Pan, Jiaoqing)


DOI: 10.1109/LPT.2013.2262265 Published: JUN 15 2013



Abstract: A 1.55-mu m InGaAsP-Si hybrid laser operating at 10 degrees C under continuous-wave operation is fabricated using a selective-area metal-bonding method with AuGeNi/Au on InGaAsP gain structure as both cathode and bonding metal and AuSn on silicon-on-insulator (SOI) as bonding metal.

The maximum single-facet output power is 9 mW. The slope efficiency of the hybrid laser is 0.04 W/A, four times that of the laser before bonding. A semi-insulating InP:Fe buried heterostructure laser is flip-chip bonded onto an SOI waveguide. The light generated in the active area is evanescently coupled into the silicon waveguide. The simplicity and flexibility of the fabrication process and high yield make the hybrid laser a promising light source.

Addresses: [Yuan, Lijun; Yu, Hongyan; Lu, Dan; Pan, Jiaoqing] Chinese Acad Sci, Inst Semicond, Key


[Tao, Li; Chen, Weixi; Li, Yanping; Ran, Guangzhao] Peking Univ, State Key Lab Mesoscop Phys, Beijing


[Tao, Li; Chen, Weixi; Li, Yanping; Ran, Guangzhao] Peking Univ, Sch Phys, Beijing 100871, Peoples R

China.

Reprint Address: Yuan, LJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: ljyuan@semi.ac.cn; taolipku@pku.edu.cn; hyyu09@semi.ac.cn; wxchen@pku.edu.cn; ludan@semi.ac.cn; lyphlj@163.com; rangz@pku.edu.cn; jqpan@semi.ac.cn

ISSN: 1041-1135

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Record 220 of 495

Title: Ordered silicon nanowires prepared by template-assisted morphological design and metal-assisted chemical etching

Author(s): Liu, K (Liu, Kong); Qu, SC (Qu, Shengchun); Tan, FR (Tan, Furui); Bi, Y (Bi, Yu); Lu, SD (Lu,

Shudi); Wang, ZG (Wang, Zhanguo)





Abstract: We reported a metal-assisted chemical etching approach to manufacture well-aligned silicon nanowires (SiNWs). Highly ordered gold (Au) mesh was achieved via vacuum evaporation on anodized aluminum oxide (AAO). It was revealed that the diameter and length of SiNWs could be controlled by adjusting the size of holes in Au mesh and etching duration, respectively. We found that the SiNWs fabricated by etching for 5 min were vertically oriented to form an array, while longer etching duration led to bunched SiNWs. The resulting SiNWs, which exhibited smooth side walls, uniform diameter, and high aspect ratio, were proved to grow along the [100] crystal direction of silicon. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Liu, Kong; Qu, Shengchun; Tan, Furui; Bi, Yu; Lu, Shudi; Wang, Zhanguo] Chinese Acad Sci,





ISSN: 0167-577X

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Record 221 of 495

Title: Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique

Author(s): Ma, H (Ma, Hui); Jiang, CY (Jiang, Chongyun); Liu, Y (Liu, Yu); Zhu, LP (Zhu, Laipan); Qin, XD

(Qin, Xudong); Chen, YH (Chen, Yonghai)


10.1063/1.4810913 Published: JUN 10 2013



Abstract: We investigate the circular photogalvanic effect (CPGE) excited by sub-bandgap radiation in a

GaAs/Al0.3Ga0.7As two dimensional electron gas and tune its amplitude by synchronously imposing an above-bandgap unpolarized light at normal incidence. With this photo-modulation technique, we identify two microscopic mechanisms of CPGE according to the dramatic change of apparent Rashba and

Dresselhaus effects. We suggest the optical transitions to be Franz-Keldysh and intraband regime, respectively. Both regimes coexist in conventional CPGE and the intraband regime dominates at sufficient modulation power. (C) 2013 AIP Publishing LLC.

Addresses: [Ma, Hui] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.



Reprint Address: Ma, H (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: mahui@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 0003-6951

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Record 222 of 495

Title: Enhanced photoluminescence from porous silicon nanowire arrays

Author(s): Zhang, CQ (Zhang, Chunqian); Li, CB (Li, Chuanbo); Liu, Z (Liu, Zhi); Zheng, J (Zheng, Jun);

Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen); Wang, QM (Wang, Qiming)


10.1186/1556-276X-8-277 Published: JUN 9 2013



Abstract: The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to

Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission.

Addresses: [Zhang, Chunqian; Li, Chuanbo; Liu, Zhi; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng,

Buwen; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing





ISSN: 1931-7573

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Record 223 of 495

Title: Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

Author(s): Jin, DD (Jin, Dong-Dong); Yang, SY (Yang, Shao-Yan); Zhang, LW (Zhang, Liu-Wan); Li, HJ (Li,

Hui-jie); Zhang, H (Zhang, Heng); Wang, JX (Wang, Jian-xia); Yang, T (Yang, Tao); Liu, XL (Liu,

Xiang-Lin); Zhu, QS (Zhu, Qin-Sheng); Wang, ZG (Wang, Zhan-Guo)


10.1063/1.4809763 Published: JUN 7 2013



Abstract: We study theoretically the effect of the in-plane magnetic field on two-dimensional electron gas transport in GaAs/InGaAs single quantum well structure. Our results show that, due to the scatterers

(GaSb quantum dots) are one-side distributed, the in-plane magnetic field leads to an anisotropic scattering probability, which results in a higher mobility along the direction perpendicular to the magnetic field. Besides, compared with the no magnetic field case, the mobility shows a parabolic increasing trend as the in-plane magnetic field strength increases. (C) 2013 AIP Publishing LLC.

Addresses: [Jin, Dong-Dong; Yang, Shao-Yan; Li, Hui-jie; Zhang, Heng; Wang, Jian-xia; Yang, Tao; Liu,

Xiang-Lin; Zhu, Qin-Sheng; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


[Jin, Dong-Dong; Yang, Shao-Yan; Li, Hui-jie; Zhang, Heng; Wang, Jian-xia; Yang, Tao; Liu, Xiang-Lin;

Zhu, Qin-Sheng; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens

Semicond Mat & Devices, Beijing 100083, Peoples R China.

[Jin, Dong-Dong; Zhang, Liu-Wan] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Jin, DD (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: ddjin2009@semi.ac.cn; sh-yyang@semi.ac.cn; qszhu@semi.ac.cn

ISSN: 0021-8979

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Record 224 of 495

Title: A sphere-cut-splice crossover for the evolution of cluster structures


Shushen)

Source: JOURNAL OF CHEMICAL PHYSICS Volume: 138 Issue: 21 Article Number: 214303 DOI:

10.1063/1.4807091 Published: JUN 7 2013



Abstract: A new crossover operator is proposed to evolve the structures of the atomic clusters. It uses a sphere rather than a plane to cut and splice the parent structures. The child cluster is constructed by the atoms of one parent which lie inside the sphere, and the atoms of the other parent which lie outside the sphere. It can reliably produce reasonable offspring and preserve the good schemata in parent structures, avoiding the drawbacks of the classical plane-cut-splice crossover in the global searching ability and the local optimization speed. Results of Lennard-Jones clusters (30 <= N <= 500) show that at the same settings the genetic algorithm with the sphere-cut-splice crossover exhibits better performance than the one with the plane-cut-splice crossover. The average number of local minimizations needed to find the global minima and the average number of energy evaluation of each local minimization in the sphere scheme is 0.8075 and 0.8386 of that in the plane scheme, respectively. The mean speed-up ratio for the entire testing clusters reaches 1.8207. Moreover, the sphere scheme is particularly suitable for large clusters and the mean speed-up ratio reaches 2.3520 for the clusters with 110 <= N <= 500. The comparison with other successful methods in previous studies also demonstrates its good performance.

Finally, a further analysis is presented on the statistical features of the cutting sphere and a modified strategy that reduces the probability of using tiny and large spheres exhibits better global search. (C)

2013 AIP Publishing LLC.

Addresses: [Chen, Zhanghui; Jiang, Xiangwei; Li, Jingbo; Li, Shushen] Chinese Acad Sci, State Key Lab


Reprint Address: Chen, ZH (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct,



ISSN: 0021-9606

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Record 225 of 495

Title: Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor

Author(s): Li, XM (Li, Xiaoming); Han, WH (Han, Weihua); Wang, H (Wang, Hao); Ma, LH (Ma, Liuhong);

Zhang, YB (Zhang, Yanbo); Du, YD (Du, Yandong); Yang, FH (Yang, Fuhua)


10.1063/1.4809828 Published: JUN 3 2013



Abstract: The electron mobility in a heavily n-doped junctionless nanowire transistor is demonstrated by the experimental investigation of the transfer characteristics at low temperatures. It is found that the minimum electron mobility at a critical low temperature results from the interplay of the thermal activation and impurity scattering. The temperature-dependence tendency of the normalized electron mobility by theoretical calculation and experimental extraction reveals that the thermal activation is responsible for the impact of the donor ionization and thermal energy on the electron mobility. (C) 2013 AIP Publishing

LLC.

Addresses: [Li, Xiaoming; Han, Weihua; Wang, Hao; Ma, Liuhong; Zhang, Yanbo; Du, Yandong; Yang,

Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083,

Peoples R China.

Reprint Address: Li, XM (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond



ISSN: 0003-6951

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Record 226 of 495

Title: Tunable coupling-induced transparency band due to coupled localized electric resonance and quasiguided photonic mode in hybrid plasmonic system

Author(s): Liu, JT (Liu, Jietao); Xu, BZ (Xu, Binzong); Hu, HF (Hu, Haifeng); Zhang, J (Zhang, Jing); Wei,

X (Wei, Xin); Xu, Y (Xu, Yun); Song, GF (Song, Guofeng)


10.1364/OE.21.013386 Published: JUN 3 2013



Abstract: A numerical and theoretical study is presented on the exhibition of tunable narrow band coupled-induced transparency phenomenon in a hybrid waveguide-plasmon system consisting of gold twin nanowires array embedded in a slab waveguide. We show that, at slightly non-normal incidence, a properly designed splitting of transmission with narrow transparency peaks may occur at a given wavelength, depending on the angle of incidence. This leads to the wavelength-selective high quality coupled-induced transparency resonance at optical frequencies. By adjusting the gap distance of the pair gratings, the coupled-induced transparency band can be switched between on-state and off-state, which provides us possibilities to develop controllable plasmonic functional devices employing plasmonic nanostructures. (C) 2013 Optical Society of America

Addresses: [Liu, Jietao; Xu, Binzong; Hu, Haifeng; Zhang, Jing; Wei, Xin; Xu, Yun; Song, Guofeng]


Reprint Address: Liu, JT (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.


ISSN: 1094-4087

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Record 227 of 495

Title: Selective synthesis of Sb2S3 nanoneedles and nanoflowers for high performance rigid and flexible photodetectors

Author(s): Chao, JF (Chao, Junfeng); Liang, B (Liang, Bo); Hou, XJ (Hou, Xiaojuan); Liu, Z (Liu, Zhe); Xie,

Z (Xie, Zhong); Liu, B (Liu, Bin); Song, WF (Song, Weifeng); Chen, G (Chen, Gui); Chen, D (Chen, Di);

Shen, GZ (Shen, Guozhen)


10.1364/OE.21.013639 Published: JUN 3 2013



Abstract: Needle-like and flower-like antimony sulfide nanostructures were synthesized and applied for both rigid and flexible photodetectors. Rigid photodetectors based on both nanostructures have the features of linear photocurrent characteristics, low linear dynamic range and good sensitivity to light intensity. Especially, the rigid Sb2S3 nanoflowers photodetector has high photoresponse characteristics and its response time and decay time were found to be relatively fast as 6 ms and 10 ms respectively.

The flexible Sb2S3 nanoflowers photodetector has high flexible, light-weight and adequate bendability with a response time of about 0.09 s and recovery time of 0.27 s. Our results revealed that the rigid and flexible photodetectors based on Sb2S3 nanostructures have great potential in next generation optoelectronic devices. (C) 2013 Optical Society of America

Addresses: [Chao, Junfeng; Liang, Bo; Hou, Xiaojuan; Liu, Zhe; Xie, Zhong; Liu, Bin; Song, Weifeng;

Chen, Gui; Chen, Di; Shen, Guozhen] HUST, WNLO, Wuhan 430074, Peoples R China.

[Chao, Junfeng; Liang, Bo; Hou, Xiaojuan; Liu, Zhe; Xie, Zhong; Liu, Bin; Song, Weifeng; Chen, Gui;

Chen, Di; Shen, Guozhen] HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.



Reprint Address: Chao, JF (reprint author), HUST, WNLO, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@mail.hust.edu.cn

ISSN: 1094-4087

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Record 228 of 495

Title: Impedance Immunosensor Based on Interdigitated Array Microelectrodes for Rapid Detection of

Avian Influenza Virus Subtype H5

Author(s): Yan, XF (Yan, Xiaofei); Wang, RH (Wang, Ronghui); Lin, JH (Lin, Jianhan); Li, YT (Li, Yuntao);

Wang, MH (Wang, Maohua); An, D (An, Dong); Jiao, PR (Jiao, Peirong); Liao, M (Liao, Ming); Yu, YD (Yu,

Yude); Li, YB (Li, Yanbin)

Source: SENSOR LETTERS Volume: 11 Issue: 6-7 Special Issue: SI Pages: 1256-1260 DOI:

10.1166/sl.2013.2870 Published: JUN-JUL 2013



Abstract: An impedance immunosensor based on interdigitated array microelectrodes (IDAMs) was developed for rapid and sensitive detection of avian influenza virus (AIV) subtype H5. The surface of the gold microelectrodes was modified with protein A and then immobilized with monoclonal antibodies against an epitope in the hemagglutinin (HA) of AIV H5 subtype. The binding of H5 subtype viruses onto the antibody-modified nnicroelectrodes surface resulted in a change in the impedance, which was measured in a frequency range of 20 Hz to 1 MHz in the presence of 10 mM [Fe(CN)(6)](3-/4-) as a redox probe. An equivalent circuit was introduced to interpret the impedance spectra of this immunosensor system. Experimental and fitting impedance spectra were well matched. The results showed that the binding of AIV H5N1 to the modified microelectrodes surface significantly increased the electron transfer resistance. A linear relationship between the change of the electron transfer resistance and the logarithmic value of H5N1 virus concentration was found in the range of 2(1) to 2(5) HA unit/50 mu l. The detection limit was 2(1) HA unit/50 mu l and the detection time was 1 h. This impedance immunosensor was specific to H5 subtype virus (H5N1) as no detectable signals were generated in the detection of non-target viruses such as AIV H9 subtype and Newcastle disease virus.

Addresses: [Yan, Xiaofei; Wang, Maohua; An, Dong] China Agr Univ, Key Lab Modern Precis Agr Syst

Integrat Res, Minist Educ, Beijing 100083, Peoples R China.

[Wang, Ronghui; Lin, Jianhan; Li, Yanbin] Univ Arkansas, Dept Biol & Agr Engn, Fayetteville, AR 72701

USA.

[Li, Yuntao; Yu, Yude] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


[Jiao, Peirong; Liao, Ming] South China Agr Univ, Coll Vet Med, Guangzhou 510642, Guangdong,

Peoples R China.

Reprint Address: Wang, MH (reprint author), China Agr Univ, Key Lab Modern Precis Agr Syst Integrat

Res, Minist Educ, Beijing 100083, Peoples R China.

E-mail Addresses: wangmh@cau.edu.cn

ISSN: 1546-198X

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Record 229 of 495

Title: Solution-grown ZnO Nanorods on Femtosecond Laser-microstructured Si Substrates

Author(s): Jia, GZ (Jia, Guozhi); Hao, BX (Hao, Bingxue); Lu, XC (Lu, Xucen); Yao, JH (Yao, Jianghong)

Source: INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE Volume: 8 Issue: 6

Pages: 7976-7983 Published: JUN 2013



Abstract: High density ZnO nanorods were prepared on femtosecond laser-restructured Si substrates by the simple and facile sol-gel and chemical bath deposition combination technology. ZnO nanorods, preferentially oriented along the c-axis, were of the hexagonal wurzite structure. The investigation shown that the ultrafast melting and ablation can change the lattice constant during the formation of Si surface microstructure after laser irradiation, which can result in the surface of Si destroyed and rebuild. As a result, the strain between ZnO nanorods and Si can be effectively decreased. The influencing mechanism of laser-restructured Si surface on the characteristics of ZnO nanorods was further analyzed.

Addresses: [Jia, Guozhi] Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

[Hao, Bingxue; Lu, Xucen; Yao, Jianghong] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat

Weak Light Nonlinear, Tianjin 300457, Peoples R China.

[Jia, Guozhi] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Jia, GZ (reprint author), Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

E-mail Addresses: gzjia@semi.ac.cn

ISSN: 1452-3981

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Record 230 of 495

Title: Size Effect of Heterostructure Type in Core/Shell Quantum Dot

Author(s): Jia, GZ (Jia, Guozhi); Hao, BX (Hao, Bingxue); Lu, XC (Lu, Xucen); Yao, JH (Yao, Jianghong)

Source: INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE Volume: 8 Issue: 6

Pages: 8167-8174 Published: JUN 2013



Abstract: Size effect of heterostructure type and exciton properties in ZnTexSe1-x/ZnSe core/shell structure QDs have been investigated by effective-mass approximation method with taking into the

Coulomb interaction account. The heterostructure types of QDs can be changed from Type-I, to Type-II with changing of the size of QDs. The spatial separation between electron and hole in QDs can be presence abruptly by adjusting Se molar fraction in the core region and size of QDs. We demonstrate that the quantum confinement effect in the ternary core is a key to the transformation from the type-I to type-II.

The transition energies can be widely tuned by the changing the Se molar fraction in the core layer and size of QDs.


[Hao, Bingxue; Lu, Xucen; Yao, Jianghong] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat

Weak Light Nonlinear, Tianjin 300457, Peoples R China.



E-mail Addresses: gzjia@semi.ac.cn

ISSN: 1452-3981

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Record 231 of 495

Title: The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

Author(s): Li, L (Li Liang); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu

Zong-Shun); Chen, P (Chen Ping); Wu, LL (Wu Liang-Liang); Le, LC (Le Ling-Cong); Wang, H (Wang

Hui); Yang, H (Yang Hui)


10.1088/1674-1056/22/6/068802 Published: JUN 2013



Abstract: InGaN/GaN p-i-n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaN-based solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.

Addresses: [Li Liang; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Wu Liang-Liang; Le

Ling-Cong; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


[Wang Hui; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R

China.




ISSN: 1674-1056

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Record 232 of 495

Title: Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

Author(s): Yu, YX (Yu Ying-Xia); Lin, ZJ (Lin Zhao-Jun); Luan, CB (Luan Chong-Biao); Wang, YT (Wang

Yu-Tang); Chen, H (Chen Hong); Wang, ZG (Wang Zhan-Guo)


10.1088/1674-1056/22/6/067203 Published: JUN 2013



Abstract: We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.

Addresses: [Yu Ying-Xia; Lin Zhao-Jun; Luan Chong-Biao; Wang Yu-Tang] Shandong Univ, Sch Phys,

Jinan 250100, Peoples R China.

[Chen Hong] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190,

Peoples R China.

[Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

Reprint Address: Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.

E-mail Addresses: linzj@sdu.edu.cn

ISSN: 1674-1056

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Record 233 of 495

Title: Highly tunable Terahertz filter with magneto-optical Bragg grating formed in semiconductor-insulator-semiconductor waveguides

Author(s): Li, KW (Li, Kangwen); Ma, XP (Ma, Xunpeng); Zhang, ZY (Zhang, Zuyin); Wang, LN (Wang,

Lina); Hu, HF (Hu, Haifeng); Xu, Y (Xu, Yun); Song, GF (Song, Guofeng)


Published: JUN 2013



Abstract: A highly tunable terahertz (THz) filter with magneto-optical Bragg grating formed in semiconductor-insulator-semiconductor waveguides is proposed and demonstrated numerically by means of the Finite Element Method. The results reveal that a sharp peak with high Q-value presents in the band gap of Bragg grating waveguide with a defect, and the position of the sharp peak can be modified greatly by changing the intensity of the transverse magnetic field applied to the device.

Compared to the situation without magnetic field applied, the shift of the filtered frequency (wavelength) reaches up to 36.1 GHz (11.4 mu m) when 1 T magnetic field is applied. In addition, a simple model to predict the filtered frequency and an effective way to improve the Q-value of the filter are proposed by this paper. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a

Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4812703]

Addresses: [Li, Kangwen; Ma, Xunpeng; Zhang, Zuyin; Wang, Lina; Hu, Haifeng; Xu, Yun; Song,

Guofeng] Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China.


China.


ISSN: 2158-3226

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Record 234 of 495

Title: Flexible Asymmetric Supercapacitors Based upon Co9S8 Nanorod//Co3O4@RuO2 Nanosheet

Arrays on Carbon Cloth

Author(s): Xu, J (Xu, Jing); Wang, QF (Wang, Qiufan); Wang, XW (Wang, Xiaowei); Xiang, QY (Xiang,

Qingyi); Hang, B (Hang, Bo); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: ACS NANO Volume: 7 Issue: 6 Pages: 5453-5462 DOI: 10.1021/nn401450s Published:

JUN 2013



Abstract: We have successfully fabricated flexible asymmetric supercapacitors (ASCs) based on acicular

Co9S8 nanorod arrays as positive materials and Co3O4@RuO2 nanosheet arrays as negative materials on woven carbon fabrics. Co9S8 nanorod arrays were synthesized by a hydrothermal sulfuration treatment of acicular Co3O4 nanorod arrays, while the RuO2 was directly deposited on the Co3O4 nanorod arrays. Carbon cloth was selected as both the substrate and the current collector for its good conductivity, high flexibility, good physical strength, and lightweight architecture. Both aqueous KOH solutions and polyvinyl alcohol (PVA)/KOH were employed as electrolyte for electrochemical measurements. The as-fabricated ASCs can be cycled reversibly In the range of 0-1.6 V and exhibit superior electrochemical performance with an energy density of 1.21 mWh/cm(3) at a power density of

13.29 W/cm(3) in aqueous electrolyte and an energy density of 1.44 mWh/cm(3) at the power density of

0.89 W/cm(3) in solid-state electrolyte, which are almost 10-fold higher than those reported In early ASC work. Moreover, they present excellent cycling performance at multirate currents and large currents after thousands of cycles. The high-performance nanostructured ASCs have significant potential applications in portable electronics and electrical vehicles.

Addresses: [Xu, Jing; Wang, Qiufan; Wang, Xiaowei; Xiang, Qingyi; Hang, Bo; Chen, Di; Shen, Guozhen]

HUST, WNLO, Wuhan 430074, Peoples R China.

[Xu, Jing; Wang, Qiufan; Wang, Xiaowei; Xiang, Qingyi; Hang, Bo; Chen, Di; Shen, Guozhen] HUST, Sch

Opt & Elect Informat, Wuhan 430074, Peoples R China.



Reprint Address: Chen, D (reprint author), HUST, WNLO, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mall.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 1936-0851

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Record 235 of 495

Title: The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers

Author(s): Han, WP (Han Wen-Peng); Shi, YM (Shi Yan-Meng); Li, XL (Li Xiao-Li); Luo, SQ (Luo

Shi-Qiang); Lu, Y (Lu Yan); Tan, PH (Tan Ping-Heng)


10.7498/aps.62.110702 Published: JUN 2013



Abstract: The optical and electronic properties of two-dimensional atomic crystals including graphene are closely dependent on their layer numbers (or thickness). It is a fundamental issue to fast and accurately identify the layer number of multilayer flakes of two-dimensional atomic crystals before further research and application in optoelectronics. In this paper, we discuss in detail the application of transfer matrix method to simulate the optical contrast of ultrathin flakes of two-dimensional atomic crystals and further to identify their thickness, where numerical aperture of microscope objective is considered. The importance of numerical aperture in the thickness determination is confirmed by the experiments on the

graphene flakes. Furthermore, two lasers with different wavelengths can be serviced as light sources for the thickness identification of flakes of two-dimensional atomic crystals with a size close to the diffraction limit of the microscope objective. The transfer matrix method is found to be very useful for the optical-contrast calculation and thickness determination of flakes of two-dimensional atomic crystals on multilayer dielectric substrate.

Addresses: [Han Wen-Peng; Shi Yan-Meng; Li Xiao-Li; Luo Shi-Qiang; Lu Yan; Tan Ping-Heng] Chinese





ISSN: 1000-3290

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Record 236 of 495

Title: Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect

Author(s): Li, YM (Li Ya-Ming); Liu, Z (Liu Zhi); Xue, CL (Xue Chun-Lai); Li, CB (Li Chuan-Bo); Cheng,

BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)





Abstract: We present a novel GeSi electro-absorption (EA) modulator design on a silicon-on-insulator platform. The GeSi EA modulator is constructed based on the Franz-Keldysh (FK) effect. The light is evanescent-coupled into the GeSi absorption layer from the rib Si waveguide. A contnet of 1.19% Si in

SiGe absorption layer is chosen for C (1528-1560 nm) band operation. Simulation shows a high (3 dB) bandwidth of similar to 64 GHz and extinction ratio of 8.8 dB. Especially the insertion loss is as low as 2.7 dB.

Addresses: [Li Ya-Ming; Liu Zhi; Xue Chun-Lai; Li Chuan-Bo; Cheng Bu-Wen; Wang Qi-Ming] Chinese

Acad Sci, Inst Semicond, Inst State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, Inst State Key Lab


E-mail Addresses: cbw@red.semi.ac.cn

ISSN: 1000-3290

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Record 237 of 495

Title: Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials

Author(s): Zhang, BQ (Zhang Bai-Qiang); Zheng, ZS (Zheng Zhong-Shan); Yu, F (Yu Fang); Ning, J

(Ning Jin); Tang, HM (Tang Hai-Ma); Yang, ZA (Yang Zhi-An)





Abstract: Nitrogen ions implanted into the buried oxide layer can increase the total dose radiation hardness of silicon on insulator (SOT) materials. However, the obvious increase in positive charge density in the buried layer with high dose of nitrogen implantation leads to a negative effect on the technology of nitrogen implantation into buried oxide. In order to suppress the increase in positive charge density in the nitrogen-implanted buried layer, co-implantation of nitrogen and fluorine is used to implant fluorine into the nitrogen-implanted buried layer. High-frequency voltage-capacitance (C-V) technique is used to characterize the positive charge density in the buried layer. Results show that, in most cases, using the co-implantation of nitrogen and fluorine can significantly reduce the positive charge density in the nitrogen-implanted buried layer. At the same time, it is also found that further increase of the positive charge density induced by fluorine implantation in the nitrogen-implanted buried layer can occur in particular cases. It is proposed that the decrease in the positive charge density in the fluorine and nitrogen-implanted buried layer is due to the introduction of electron traps into the buried layer through fluorine implantation.

Addresses: [Zhang Bai-Qiang; Tang Hai-Ma; Yang Zhi-An] Univ Jinan, Sch Phys & Technol, Jinan


[Zheng Zhong-Shan; Yu Fang] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China.

[Ning Jin] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Yang, ZA (reprint author), Univ Jinan, Sch Phys & Technol, Jinan 250022, Peoples R

China.

E-mail Addresses: zszheng513@163.com

ISSN: 1000-3290

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Record 238 of 495

Title: Study on proton irradiation induced defects in GaN thick film

Author(s): Zhang, ML (Zhang Ming-Lan); Yang, RX (Yang Rui-Xia); Li, ZX (Li Zhou-Xin); Cao, XZ (Cao

Xing-Zhong); Wang, BY (Wang Bao-Yi); Wang, XH (Wang Xiao-Hui)





Abstract: Proton-irradiation-induced defects threaten seriously the stable performance of GaN-based devices in harsh environments, such as outer space. It is therefore urgent to understand the behaviors of proton-irradiation-induced defects for improving the radiation tolerance of GaN-based devices. Positron annihilation spectroscopy (PAS) has been used to study proton-induced defects in GaN grown by HYPE.

The result shows that V-Ga is the main defects and no (VGaVN) or (VGaVN)(2) is formed in 5 MeV proton-irradiated GaN. Photoluminescence (PL) spectrum is carried out at 10K. After irradiation, the band edge shows a blue-shift, but the donor-acceptor pair (DAP) emission band and its LO-phonon replicas is kept at the original position. The intensity of yellow luminescence (YL) band is decreased, which means that the origin of YL band has no relation with V-Ga. The increased FWHM of GaN (0002) peak in proton-irradiated GaN indicates a degradation of crystal quality.

Addresses: [Zhang Ming-Lan; Yang Rui-Xia] Hebei Univ Technol, Colleage Informat Engn, Tianjin


[Zhang Ming-Lan; Wang Xiao-Hui] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci Inst,


[Li Zhou-Xin; Cao Xing-Zhong; Wang Bao-Yi] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl

Anal Tech, Beijing 100049, Peoples R China.

Reprint Address: Zhang, ML (reprint author), Hebei Univ Technol, Colleage Informat Engn, Tianjin


E-mail Addresses: zhml@hebut.edu.cn

ISSN: 1000-3290

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Record 239 of 495

Title: Photonic-Assisted Ultrawideband Pulse Generator With Tunable Notch Filtering Based on

Polarization-to-Intensity Conversion

Author(s): Zheng, JY (Zheng, Jianyu); Zhu, NH (Zhu, Ninghua); Wang, H (Wang, Hui); Du, YX (Du,

Yuanxin); Wang, LX (Wang, Lixian); Liu, JG (Liu, Jianguo)


10.1109/JPHOT.2013.2259584 Published: JUN 2013



Abstract: A photonic approach to generating ultrawideband (UWB) pulses with tunable band-rejection behavior and a chirp-free property, which is based on a nonlinear operated polarization-to-intensity converter, is proposed and demonstrated. As an initial phase shift of the incident light phi(0) = pi, a high-order UWB pulse fully satisfied the indoor mask regulated by the Federal Communications

Commission was synthesized by a pair of polarity-inverted and doublet-like pulses at the output port of the polarization beam combiner. Moreover, the notch band will occur dynamically on the power spectra of the UWB signals from 3 to 16 GHz through adjusting the relative delay time between both doublet-like pulses from 333 to 62.5 ps due to the effect of microwave photonic filtering, which means that the spectrum-overlay-induced interference between UWB and other narrow-band communication systems

could be real-time averted. In addition, the polarity switch of the synthesized UWB pulse could be implemented by adjusting angle alpha between the x-axis component of modulated light and the principal axis of the arm of transverse electric mode by the polarization controller.

Addresses: [Zheng, Jianyu; Zhu, Ninghua; Wang, Hui; Du, Yuanxin; Wang, Lixian; Liu, Jianguo] Chinese





ISSN: 1943-0655

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Record 240 of 495

Title: Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular

Physisorption Gating

Author(s): Tongay, S (Tongay, Sefaattin); Zhou, J (Zhou, Jian); Ataca, C (Ataca, Can); Liu, J (Liu,

Jonathan); Kang, JS (Kang, Jeong Seuk); Matthews, TS (Matthews, Tyler S.); You, L (You, Long); Li, JB

(Li, Jingbo); Grossman, JC (Grossman, Jeffrey C.); Wu, JQ (Wu, Junqiao)

Source: NANO LETTERS Volume: 13 Issue: 6 Pages: 2831-2836 DOI: 10.1021/nl4011172

Published: JUN 2013



Abstract: In the monolayer limit, transition metal dichalcogenides become direct-bandgap, light-emitting semiconductors. The quantum yield of light emission is low and extremely sensitive to the substrate used, while the underlying physics remains elusive. In this work, we report over 100 times modulation of light emission efficiency of these two-dimensional semiconductors by physical adsorption of O-2 and/or H2O molecules, while inert gases do not cause such effect. The O-2 and/or H2O pressure acts quantitatively as an instantaneously reversible "molecular gating" force, providing orders of magnitude broader control of carrier density and light emission than conventional electric field gating. Physi-sorbed O-2 and/or H2O molecules electronically deplete n-type materials such as MoS2 and MoSe2, which weakens electrostatic screening that would otherwise destabilize excitons, leading to the drastic enhancement in photoluminescence. In p-type materials such as WSe2, the molecular physisorption results in the opposite effect Unique and universal in two-dimensional semiconductors, the effect offers a new mechanism for modulating electronic interactions and implementing optical devices.

Addresses: [Tongay, Sefaattin; Zhou, Jian; Liu, Jonathan; Kang, Jeong Seuk; Matthews, Tyler S.; Wu,

Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Ataca, Can; Grossman, Jeffrey C.] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA.

[You, Long] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA.

[Li, Jingbo] Chinese Acad Sci, Inst Semiconduct, Beijing 100083, Peoples R China.

[Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Wu, JQ (reprint author), Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720

USA.

E-mail Addresses: wuj@berkeley.edu

ISSN: 1530-6984

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Record 241 of 495

Title: Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

Author(s): Li, JJ (Li, Jijun); Zhao, CW (Zhao, Chunwang); Xing, YM (Xing, Yongming); Su, SJ (Su,

Shaojian); Cheng, BW (Cheng, Buwen)

Source: MATERIALS Volume: 6 Issue: 6 Pages: 2130-2142 DOI: 10.3390/ma6062130

Published: JUN 2013



Abstract: The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60 dislocation and 90 full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA) and peak pairs analysis (PPA), respectively.

The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and

Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.

Addresses: [Li, Jijun; Zhao, Chunwang; Xing, Yongming] Inner Mongolia Univ Technol, Coll Sci, Hohhot


[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Zhao, CW (reprint author), Inner Mongolia Univ Technol, Coll Sci, Hohhot 010051,

Peoples R China.

E-mail Addresses: lijjtom@yahoo.com.cn; sushaojian@hqu.edu.cn; cbw@red.semi.ac.cn

ISSN: 1996-1944 zhaocw@imut.edu.cn; xym@imut.edu.cn;

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Record 242 of 495

Title: Double Plasmon-Induced Transparency in Hybrid Waveguide-Plasmon System and Its Application for Localized Plasmon Resonance Sensing with High Figure of Merit

Author(s): Liu, JT (Liu, Jietao); Xu, BZ (Xu, Binzong); Zhang, J (Zhang, Jing); Song, GF (Song, Guofeng)

Source: PLASMONICS Volume: 8 Issue: 2 Pages: 995-1001 DOI: 10.1007/s11468-013-9501-6

Published: JUN 2013



Abstract: We demonstrate multispectral sharp plasmon-induced transparency response in a hybrid waveguide-plasmon system. By using the classical mechanical model of coupled damped harmonic oscillators, a clear and intuitive interpretation of the construction of the double-electromagnetically induced transparency (EIT)-like phenomenon is provided. High figure of merit up to 28.8 of the system for localized plasmon resonance refractive index sensing is obtained. Narrow polarization-independent double EIT-like spectral response is constructed, which provides an efficient tool for possible applications on slow light, enhanced nonlinear effect, nanoplasmonic functional devices, and integrated optical circuit.

Addresses: [Liu, Jietao; Xu, Binzong; Zhang, Jing; Song, Guofeng] Chinese Acad Sci, Inst Semicond,


Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083,

Peoples R China.


ISSN: 1557-1955

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Record 243 of 495

Title: Tunable Omnidirectional Broadband Band-Stop Filter in Symmetric Hybrid Plasmonic Structures

Author(s): Liu, JT (Liu, Jietao); Zhang, J (Zhang, Jing); Cai, LK (Cai, Likang); Xu, BZ (Xu, Binzong); Song,

GF (Song, Guofeng)

Source: PLASMONICS Volume: 8 Issue: 2 Pages: 1101-1108 DOI: 10.1007/s11468-013-9515-0

Published: JUN 2013



Abstract: We numerically investigate a symmetric hybrid waveguide-plasmon system composed of a periodic metallic nanowires pairs array embedded in symmetric dielectric sandwich layers for band-stop filtering in the optical frequency range. The proposed symmetric system shows an omnidirectional broadband absorption enhancement with flat band-stop transmission induced by the coupling and hybridization of photonic and plasmonic modes. The transmission stop band bandwidth ranging from 80 to 585 nm is observed. The bandwidth of the proposed system can be further manipulated by tailoring their geometrics for potential applications in plasmonic-assisted broadband optical filtering.

Addresses: [Liu, Jietao; Zhang, Jing; Cai, Likang; Xu, Binzong; Song, Guofeng] Chinese Acad Sci, Inst


Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083,

Peoples R China.


ISSN: 1557-1955

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Record 244 of 495

Title: Effect of MoO3-doped PTCDA as buffer layer on the performance of CuPc/C60 solar cells

Author(s): Guan, M (Guan, Min); Cao, GH (Cao, Guohua); Chu, XB (Chu, Xinbo); Zhang, Y (Zhang,

Yang); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping)

Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Volume: 210

Issue: 6 Pages: 1178-1182 DOI: 10.1002/pssa.201228597 Published: JUN 2013



Abstract: The long-term performance stability of organic solar cells (OSCs), as well as their high power-conversion efficiency, is necessary for their practical use. A stable OSC with the structure of

ITO/buffer/donor/acceptor/cathode is presented. A thin layer of MoO3-doped PTCDA (molar ratio 1:1) is adopted as the buffer in CuPc/C60 organic heterojunction photovoltaic (PV) solar cells, resulting in four to five times longer lifetime. The CT complex of buffer layer plays a decisive role in improving the stability and abnormal efficiency changes.

Addresses: [Guan, Min; Chu, Xinbo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

[Cao, Guohua] Henan Polytech Univ, Sch Phys & Chem, Jiaozuo 454000, Peoples R China.

[Zhang, Yang; Liu, Xingfang; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083,

Peoples R China.

Reprint Address: Guan, M (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912,


E-mail Addresses: guanmin@semi.ac.cn; ghcao@hpu.edu.cn; ypzeng@semi.ac.cn

ISSN: 1862-6300

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Record 245 of 495

Title: The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

Author(s): Li, ZD (Li Zhi-Dong); Xiao, HL (Xiao Hong-Ling); Wang, XL (Wang Xiao-Liang); Wang, CM

(Wang Cui-Mei); Deng, QW (Deng Qing-Wen); Jing, L (Jing Liang); Ding, JQ (Ding Jie-Qin); Wang, ZG

(Wang Zhan-Guo); Hou, X (Hou Xun)


10.1088/0256-307X/30/6/068402 Published: JUN 2013



Abstract: Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN

MQWs on Si (111) substrate is demonstrated, and an InGaN/GaNMQWs solar cell device is fabricated.

Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage V-oc = 0.32 V, and short circuit current J(sc) = 0.07mA/cm(2), under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and

Raman scattering experiments are carried out. It is found that insertion of a proper top AlN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.

Addresses: [Li Zhi-Dong; Xiao Hong-Ling; Wang Xiao-Liang; Wang Cui-Mei; Deng Qing-Wen; Jing Liang;

Ding Jie-Qin; Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing


[Li Zhi-Dong; Xiao Hong-Ling; Wang Xiao-Liang; Wang Cui-Mei; Deng Qing-Wen; Jing Liang; Ding

Jie-Qin; Wang Zhan-Guo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083,

Peoples R China.

[Wang Xiao-Liang] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R

China.

[Wang Xiao-Liang; Hou Xun] Xi An Jiao Tong Univ, Xian 710049, Peoples R China.

Reprint Address: Xiao, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: hlxiao@semi.ac.cn

ISSN: 0256-307X

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Record 246 of 495

Title: InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Author(s): Luo, S (Luo Shuai); Ji, HM (Ji Hai-Ming); Gao, F (Gao Feng); Yang, XG (Yang Xiao-Guang);

Liang, P (Liang Ping); Zhao, LJ (Zhao Ling-Juan); Yang, T (Yang Tao)


10.1088/0256-307X/30/6/068101 Published: JUN 2013



Abstract: We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs. Ridge waveguide lasers with 6 mu m width have been fabricated by standard optical lithography and wet etching. Under continuous wave operation at room temperature, a low threshold current density of 447 A/cm(2) per QD layer is achieved for a QD laser with a cavity length of 2 mm. Moreover, the lasing redshifts from 1.61 mu m to 1.645 mu m as the cavity length increases from 1.5 mm to 4 mm. A high characteristic temperature of up to 88 K is obtained in the temperature range between 10 degrees C and 40 degrees C.

Addresses: [Luo Shuai; Ji Hai-Ming; Gao Feng; Yang Xiao-Guang; Liang Ping; Zhao Ling-Juan; Yang

Tao] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.




ISSN: 0256-307X

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Record 247 of 495

Title: Continuous-Wave Operation of Terahertz Quantum Cascade Lasers at 3.2 THz

Author(s): Wang, T (Wang Tao); Liu, JQ (Liu Jun-Qi); Chen, JY (Chen Jian-Yan); Liu, YH (Liu Ying-Hui);

Liu, FQ (Liu Feng-Qi); Wang, LJ (Wang Li-Jun); Wang, ZG (Wang Zhan-Guo)


10.1088/0256-307X/30/6/064201 Published: JUN 2013



Abstract: We demonstrate continuous-wave (cw) operation of terahertz (THz) quantum cascade lasers emitting at 3.2 THz based on bound-to-continuum active region and semi-insulating surface-plasmon waveguide design. Optical power of 62mW with a threshold current density of 285 A/cm(2) is obtained at

10K from a 130-mu m-wide and 1.5-mm-long laser in cw operation. Maximum cw operation temperature is up to 60 K. In pulsed mode, peak optical power more than 100mW at 10K and 2.1mW at 85K are observed from a 230-mu m-wide and 2-mm-long device.

Addresses: [Wang Tao; Liu Jun-Qi; Chen Jian-Yan; Liu Ying-Hui; Liu Feng-Qi; Wang Li-Jun; Wang


China.

Reprint Address: Liu, JQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,



ISSN: 0256-307X

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Record 248 of 495

Title: Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

Author(s): Emelyanov, EA (Emelyanov, E. A.); Kokhanenko, AP (Kokhanenko, A. P.); Pchelyakov, OP

(Pchelyakov, O. P.); Loshkarev, ID (Loshkarev, I. D.); Seleznev, VA (Seleznev, V. A.); Putyato, MA

(Putyato, M. A.); Semyagin, BR (Semyagin, B. R.); Preobrazhenskii, VV (Preobrazhenskii, V. V.); Niu, ZC

(Niu, Zhicuan); Ni, HQ (Ni, Haiqiao)

Source: RUSSIAN PHYSICS JOURNAL Volume: 56 Issue: 1 Pages: 55-61 DOI:

10.1007/s11182-013-9994-7 Published: JUN 2013



Abstract: Using the method of molecular-beam epitaxy, GaAs films are grown on Si substrates tilted from the (001) plane by 6A degrees to the [110] direction. The GaAs films are grown both on Si surfaces terminated by arsenic atoms and on pseudo-morphic GaP/Si layers. The layers of GaAs are nucleated by the method of atomic-layer epitaxy at low temperatures. The resulting structures are found to differ in crystallographic orientation of the GaAs film with respect to the film tilt direction. The structures thus grown are examined by the methods of x-ray diffraction analysis and atomic force microscopy.

Addresses: [Emelyanov, E. A.; Pchelyakov, O. P.; Loshkarev, I. D.; Seleznev, V. A.; Putyato, M. A.;

Semyagin, B. R.; Preobrazhenskii, V. V.] SB RAS, Rzhanov Inst Semicond Phys, Novosibirsk, Russia.

[Kokhanenko, A. P.] Natl Res Tomsk State Univ, Tomsk, Russia.

[Niu, Zhicuan; Ni, Haiqiao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Emelyanov, EA (reprint author), SB RAS, Rzhanov Inst Semicond Phys, Novosibirsk,

Russia.

E-mail Addresses: kokh@elefot.tsu.ru

ISSN: 1064-8887

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Record 249 of 495

Title: Hybrid III-V/silicon single mode laser with periodic microstructures (vol 38, pg 842, 2013)

Author(s): Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SRGL

(Zhang, Siriguleng); Ma, SD (Ma, Shaodong); Qi, AY (Qi, Aiyi); Feng, ZG (Feng, Zhigang); Peng, HL

(Peng, Hongling); Zheng, WH (Zheng, Wanhua)





Addresses: [Zhang, Yejin; Qu, Hongwei; Wang, Hailing; Zhang, Siriguleng; Ma, Shaodong; Qi, Aiyi; Feng,

Zhigang; Peng, Hongling; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated

Optoelect, Beijing, Peoples R China.


Optoelect, Beijing, Peoples R China.


ISSN: 0146-9592

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Record 250 of 495

Title: The magnetic switching process in MBE-grown Co2MnAl Heusler alloy film

Author(s): Qiao, S (Qiao, Shuang); Gao, HX (Gao, Haixia); Nie, SH (Nie, Shuaihua); Zhao, JH (Zhao,

Jianhua); Zhang, XH (Zhang, Xinhui)


10.1016/j.ssc.2013.03.027 Published: JUN 2013



Abstract: Single-crystalline Co2MnAl Heusler alloy film has been successfully grown on GaAs (001) substrate by molecular-beam epitaxy (MBE). The complex multistep magnetic switchings with single, double, and triple loops, deriving from the in-plane uniaxial magnetic anisotropy superimposed with a cubic anisotropy, have been observed experimentally. All switching processes are revealed to be mediated by the sweeping of 90 degrees and 180 degrees domain walls, and can be explained successfully based on the domain energetics. Theoretical calculation of hard axis orientation using free energy density shows excellent agreement with the experimental result. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Qiao, Shuang; Gao, Haixia; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui] Chinese Acad Sci,

State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, XH (reprint author), Chinese Acad Sci, State Key Lab Superlattices &

Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.


ISSN: 0038-1098

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Record 251 of 495

Title: Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature

Author(s): Hu, SX (Hu, Shaoxu); Han, PD (Han, Peide); Mi, YH (Mi, Yanhong); Xing, YP (Xing, Yupeng);

Liang, P (Liang, Peng); Fan, YJ (Fan, Yujie)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 16 Issue: 3 Pages:

987-991 DOI: 10.1016/j.mssp.2013.02.008 Published: JUN 2013



Abstract: Selenium-hyperdoped silicon was prepared by ion implantation at 100 eV to a dose of 6 x 10(15)

Se/cm(2), followed by furnace annealing at 500-900 degrees C for 30 min. A phase transition from amorphous to crystalline was observed for the sample annealed at 600 degrees C. Carrier density in the

Se doping layer gradually increases with the annealing temperature and a high carrier/donor ratio of

7.5% was obtained at 900 degrees C. The effects of annealing temperature on the rectifying behavior and external quantum efficiency of n(+)p junctions formed on Se-hyperdoped silicon were also investigated. We found that 700 degrees C was the optimal annealing temperature for improving the crystallinity, below-bandgap absorption, junction rectification and external quantum efficiency of

Se-doped samples. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Hu, Shaoxu; Han, Peide; Mi, Yanhong; Xing, Yupeng; Liang, Peng; Fan, Yujie] Chinese


Reprint Address: Hu, SX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: hushaoxu@semi.ac.cn

ISSN: 1369-8001

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Record 252 of 495

Title: Photoluminescence properties of porous InP filled with ferroelectric polymers

Author(s): Jia, CH (Jia, C. H.); Chen, YH (Chen, Y. H.); Jiang, YC (Jiang, Y. C.); Liu, FQ (Liu, F. Q.); Qu,

SC (Qu, S. C.); Zhang, WF (Zhang, W. F.); Wang, ZG (Wang, Z. G.)

Source: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 111 Issue: 3

Pages: 695-699 DOI: 10.1007/s00339-013-7717-0 Published: JUN 2013



Abstract: Photoluminescence properties of porous InP are found to be strongly affected by infilling ferroelectric polymers. Based on the temperature- and excitation-power-dependent photoluminescence, the intensity suppression and blue shift of the near-band-edge emission are supposed to result from the passivation of surface states by introducing ferroelectric polymers. On the other hand, the significant enhancement of deep-level emission is caused by the increased concentration of phosphorus vacancies due to ion exchange when infilling the ferroelectric polymers into porous InP. The surface passivation of porous InP by ferroelectric polymers is useful for improving the performances of InP-based electronic and optoelectronic devices.

Addresses: [Jia, C. H.; Zhang, W. F.] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004,

Peoples R China.

[Jia, C. H.; Zhang, W. F.] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

[Jia, C. H.; Chen, Y. H.; Jiang, Y. C.; Liu, F. Q.; Qu, S. C.; Wang, Z. G.] Chinese Acad Sci, Inst Semicond,


Reprint Address: Chen, YH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: yhchen@red.semi.ac.cn

ISSN: 0947-8396

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Record 253 of 495

Title: Stable p- and n-type doping of few-layer graphene/graphite

Author(s): Meng, XQ (Meng, Xiuqing); Tongay, S (Tongay, Sefaattin); Kang, J (Kang, Jun); Chen, ZH

(Chen, Zhanghui); Wu, FM (Wu, Fengmin); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Li, JB (Li,

Jingbo); Wu, JQ (Wu, Junqiao)

Source: CARBON Volume: 57 Pages: 507-514 DOI: 10.1016/j.carbon.2013.02.028 Published:

JUN 2013



Abstract: ZnMg and NbCl5 were intercalated in graphite and the presence of such molecules between the graphene sheets results in n- and p-type doping, respectively. The doping effect is confirmed by Hall and Raman measurements and the intercalation process is monitored by scanning tunneling microscopy.

After intercalation the carrier concentration increase almost an order of magnitude and reaches values as high as 10(19)and 10(18) cm(-3) for p- and n-type doping, respectively. For higher intercalation times, the intercalated graphite turns back to be as ordered as pristine one as evidenced by the reduction in the D peak in Raman measurements. Intercalation compounds show remarkable stability allowing us to permanently tune the physical properties of few-layer graphite. Our study has provided a new route to produce stable and functional graphite intercalation compounds and the results can be applied to other graphitic structures such as few-layer graphene on SiC. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Meng, Xiuqing; Wu, Fengmin; Li, Jingbo] Zhejiang Normal Univ, Res Ctr Light Emitting

Diodes LED, Jinhua 321004, Peoples R China.


[Kang, Jun; Chen, Zhanghui; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo] Chinese Acad Sci, State Key Lab


Reprint Address: Li, JB (reprint author), Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED,

Jinhua 321004, Peoples R China.


ISSN: 0008-6223

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Record 254 of 495

Title: A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance

Author(s): Yu, GH (Yu, Guohao); Cai, Y (Cai, Yong); Wang, Y (Wang, Yue); Dong, ZH (Dong, Zhihua);

Zeng, CH (Zeng, Chunhong); Zhao, DS (Zhao, Desheng); Qin, H (Qin, Hua); Zhang, BS (Zhang,

Baoshun)


10.1109/LED.2013.2259213 Published: JUN 2013



Abstract: In this letter, a double-gate AlGaN/GaN high electron mobility transistor operated in a synchronized switching mode is demonstrated, and improved dynamic performances are obtained. The additional gate sits on top of the conventional gate and stretches 2/4 mu m to the source/drain electrodes, respectively. A positive voltage pulse is applied to the top gate and is synchronized with the ON-OFF switching pulse applied to the conventional gate. Such a double-gate driving method significantly improves the dynamic performances of the device. Moreover, it allows us to investigate the dynamic

ON-resistance in the drift region in detail.

Addresses: [Yu, Guohao; Cai, Yong; Wang, Yue; Dong, Zhihua; Zeng, Chunhong; Zhao, Desheng; Qin,

Hua; Zhang, Baoshun] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices &

Applicat, Suzhou 215123, Peoples R China.

[Yu, Guohao; Wang, Yue] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Yu, Guohao] Chinese Acad Sci, Inst Semicond, Beijing 10008, Peoples R China.

Reprint Address: Yu, GH (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab



ISSN: 0741-3106

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Record 255 of 495

Title: 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs

Barrier

Author(s): Cui, K (Cui, Kai); Ma, WQ (Ma, Wenquan); Zhang, YH (Zhang, Yanhua); Huang, JL (Huang,

Jianliang); Wei, Y (Wei, Yang); Cao, YL (Cao, Yulian); Guo, XL (Guo, Xiaolu); Li, Q (Li, Qiong)


10.1109/LED.2013.2258135 Published: JUN 2013



Abstract: We report on a memory structure that only makes use of holes as the storage charges based on type-II GaSb/GaAs quantum dots (QDs) using an AlGaAs barrier. The C-V measurements confirm existence of quantum states in the GaSb dots and reveal the applied bias voltage range for the write/erase process by charging/discharging the QDs. A large hole activation energy value of 540 meV is obtained for the device measured by deep level transient spectroscopy. Our results indicate that type-II

GaSb/GaAs QD system is a promising candidate for future memory devices.

Addresses: [Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo,

Xiaolu; Li, Qiong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Cui, K (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: wqma@semi.ac.cn

ISSN: 0741-3106

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Record 256 of 495

Title: Tunable Distributed Feedback Quantum Cascade Lasers by a Sampled Bragg Grating

Author(s): Zhuo, N (Zhuo, Ning); Zhang, JC (Zhang, Jinchuan); Liu, FQ (Liu, Fengqi); Wang, LJ (Wang,

Lijun); Tan, S (Tan, Song); Yan, FL (Yan, Fangliang); Liu, JQ (Liu, Junqi); Wang, ZG (Wang, Zhanguo)


DOI: 10.1109/LPT.2013.2257716 Published: JUN 1 2013



Abstract: A novel complex-coupled distributed feedback quantum cascade laser emitting around lambda similar to 4.7 mu m is demonstrated by a sampled Bragg grating (SBG). The key superiorities are to utilize the +1st-order (positive first order) transmission of the SBG for laser single-mode operation, and use conventional holographic exposure combined with the optical photolithography technology to fabricate the sampled grating, which lead to improved flexibility, repeatability, and cost-effectiveness.

Selective single-mode lasing with a mean side mode suppression ratio above 20 dB and wavelength coverage range of 87 nm is achieved by changing the sampling period.

Addresses: [Zhuo, Ning; Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Tan, Song; Yan, Fangliang; Liu,

Junqi; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

[Zhuo, Ning; Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Tan, Song; Yan, Fangliang; Liu, Junqi; Wang,

Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Zhuo, N (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: zhangjinchuan@semi.ac.cn; fqliu@semi.ac.cn

ISSN: 1041-1135

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Record 257 of 495

Title: Dislocation Scattering in ZnMgO/ZnO Heterostructures

Author(s): Sang, L (Sang, Ling); Yang, SY (Yang, Shao Yan); Liu, GP (Liu, Gui Peng); Zhao, GJ (Zhao,

Gui Juan); Liu, CB (Liu, Chang Bo); Gu, CY (Gu, Cheng Yan); Wei, HY (Wei, Hong Yuan); Liu, XL (Liu,

Xiang Lin); Zhu, QS (Zhu, Qin Sheng); Wang, ZG (Wang, Zhan Guo)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 60 Issue: 6 Pages: 2077-2079

DOI: 10.1109/TED.2013.2255599 Published: JUN 2013



Abstract: The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region.

The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dis-locations was chosen as N-dis =

1.5 x 10(8) cm(-2) and the IRS parameters were Delta = 5.206 and Lambda = 30 angstrom. We obtained a good fit between our calculated results and experimental data reported in the works referenced.

Addresses: [Sang, Ling; Yang, Shao Yan; Liu, Gui Peng; Zhao, Gui Juan; Liu, Chang Bo; Gu, Cheng Yan;

Wei, Hong Yuan; Liu, Xiang Lin; Zhu, Qin Sheng; Wang, Zhan Guo] Chinese Acad Sci, Inst Semicond,

Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083,

Peoples R China.

Reprint Address: Sang, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: lingsang@semi.ac.cn; sh-yyang@semi.ac.cn; liugp@semi.ac.cn; gjzhao@semi.ac.cn; liuchb@semi.ac.cn; chygu@semi.ac.cn; why@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn; zgwang@red.semi.ac.cn

ISSN: 0018-9383

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Record 258 of 495

Title: Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Author(s): Su, XJ (Su, X. J.); Xu, K (Xu, K.); Ren, GQ (Ren, G. Q.); Wang, JF (Wang, J. F.); Xu, Y (Xu, Y.);

Zeng, XH (Zeng, X. H.); Zhang, JC (Zhang, J. C.); Cai, DM (Cai, D. M.); Zhou, TF (Zhou, T. F.); Liu, ZH

(Liu, Z. H.); Yang, H (Yang, H.)


10.1016/j.jcrysgro.2013.03.018 Published: JUN 1 2013



Abstract: A detailed study on electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy is presented. There are two distinctive regions with non-homogeneous electrical and optical properties in N-face of GaN revealed by wet etching, Raman and cathodoluminescence. One region exclusively exhibited stronger donor-acceptor pair emission and higher carrier concentration due to impurity incorporation. A strong red-shift of near band edge emission of similar to 24 meV was also observed owing to additional carrier concentration. Furthermore, the activation energy difference of the etching process between the two regions is similar to 0.12 eV. The distinctive etching topography was probably due to the difference of surface potentials related to the level of carrier concentration in GaN. (C)

2013 Elsevier B.V. All rights reserved.

Addresses: [Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou,

T. F.; Liu, Z. H.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123,

Peoples R China.

[Su, X. J.; Xu, K.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zhang, J. C.; Cai, D. M.] Suzhou Nanowin Sci & Technol Co Ltd,

Suzhou 215123, Peoples R China.

Reprint Address: Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou


E-mail Addresses: kxu2006@sinano.ac.cn

ISSN: 0022-0248

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Record 259 of 495

Title: Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

Author(s): Yang, XG (Yang, Xiaoguang); Wang, KF (Wang, Kefan); Gu, YX (Gu, Yongxian); Ni, HQ (Ni,

Haiqiao); Wang, XD (Wang, Xiaodong); Yang, T (Yang, Tao); Wang, ZG (Wang, Zhanguo)

Source: SOLAR ENERGY MATERIALS AND SOLAR CELLS Volume: 113 Pages: 144-147 DOI:

10.1016/j.solmat.2013.02.005 Published: JUN 2013



Abstract: This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells by directly doping Si into InAs QDs during the QD growth. The devices which contain five stacked

QDs in their i-regions were grown using molecular beam epitaxy. It is shown that using appropriate

Si-doing, the open-circuit voltage of the device can be increased to 0.84 V. This is dramatically higher

than the value of 0.67 V obtained in undoped device using the same structure. Moreover, the efficiency of corresponding device is improved from 11.3% to 17.0%. This improvement in efficiency is attributed to greatly reduced energy loss in the devices that results from the reduction of the defect density in the stacked InAs/GaAs QD layers due to the doping. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Yang, Xiaoguang; Wang, Kefan; Gu, Yongxian; Yang, Tao; Wang, Zhanguo] Chinese Acad


[Ni, Haiqiao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


[Wang, Xiaodong] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing





ISSN: 0927-0248

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Record 260 of 495

Title: The effect of magnetic ordering on light emitting intensity of Eu-doped GaN

Author(s): Li, YC (Li, Yanchen); Yu, S (Yu, Sheng); Meng, XQ (Meng, Xianquan); Liu, YH (Liu, Yihe);

Zhao, YH (Zhao, Yonghe); Liu, FQ (Liu, Feng Qi); Wang, ZG (Wang, Zhanguo)


215101 DOI: 10.1088/0022-3727/46/21/215101 Published: MAY 29 2013



Abstract: The optical and magnetic properties of Eu-doped GaN prepared by ion implantation were reported and the effect of magnetic field on the photoluminescence (PL) behaviour was studied. The PL spectra show that the samples exhibit strong emission at around 622.0 nm. Magnetic measurement reveals ferromagnetic ordering at room temperature. There was an obvious correlation between the PL intensity and the external magnetic field. When external magnetic field of 1000 Oe was applied to the sample, a decrease of roughly 24% in the peak intensity at 622 nm was observed. The mechanics of the magnetic ordering-modulated light emission of rare-earth-doped GaN films is discussed. It may have applications in producing magneto-optical devices.

Addresses: [Li, Yanchen; Yu, Sheng; Meng, Xianquan; Liu, Yihe; Zhao, Yonghe] Wuhan Univ, Key Lab

Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Hubei, Peoples R China.

[Li, Yanchen; Yu, Sheng; Meng, Xianquan; Liu, Yihe; Zhao, Yonghe] Wuhan Univ, Sch Phys & Technol,

Wuhan 430072, Hubei, Peoples R China.

[Meng, Xianquan; Liu, Feng Qi; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond


Reprint Address: Li, YC (reprint author), Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ,

Wuhan 430072, Hubei, Peoples R China.

E-mail Addresses: mengxq@whu.edu.cn

ISSN: 0022-3727

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Record 261 of 495

Title: Ultrafine Sulfur Nanoparticles in Conducting Polymer Shell as Cathode Materials for High

Performance Lithium/Sulfur Batteries

Author(s): Chen, HW (Chen, Hongwei); Dong, WL (Dong, Weiling); Ge, J (Ge, Jun); Wang, CH (Wang,

Changhong); Wu, XD (Wu, Xiaodong); Lu, W (Lu, Wei); Chen, LW (Chen, Liwei)


Published: MAY 29 2013



Abstract: We report the synthesis of ultrafine S nanoparticles with diameter 10 similar to 20 nm via a membrane-assisted precipitation technique. The S nanoparticles were then coated with conducting poly

(3,4-ethylenedioxythiophene) (PEDOT) to form S/PEDOT core/shell nanoparticles. The ultrasmall size of

S nanoparticles facilitates the electrical conduction and improves sulfur utilization. The encapsulation of conducting PEDOT shell restricts the polysulfides diffusion, alleviates self-discharging and the shuttle

effect, and thus enhances the cycling stability. The resulting S/PEDOT core/shell nanoparticles show initial discharge capacity of 1117 mAh g(-1) and a stable capacity of 930 mAh g(-1) after 50 cycles.

Addresses: [Chen, Hongwei; Dong, Weiling; Ge, Jun; Wang, Changhong; Wu, Xiaodong; Lu, Wei; Chen,

Liwei] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, i LAB, Suzhou 215123, Peoples R

China.

[Chen, Hongwei] Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China.

[Dong, Weiling] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Changhong] Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R

China.

Reprint Address: Chen, LW (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion

SINANO, i LAB, Suzhou 215123, Peoples R China.

E-mail Addresses: lwchen2008@sinano.ac.cn

ISSN: 2045-2322

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Record 262 of 495

Title: Interplay between edge and bulk states in silicene nanoribbon

Author(s): An, XT (An, Xing-Tao); Zhang, YY (Zhang, Yan-Yang); Liu, JJ (Liu, Jian-Jun); Li, SS (Li,

Shu-Shen)


10.1063/1.4808367 Published: MAY 27 2013



Abstract: We investigate the interplay between the edge and bulk states, induced by the Rashba spin-orbit coupling, in a zigzag silicene nanoribbon in the presence of an external electric field. The interplay can be divided into two kinds, one is the interplay between the edge and bulk states with opposite velocities, and the other is that with the same velocity direction. The former can open small direct spin-dependent subgaps. A spin-polarized current can be generated in the nanoribbon as the

Fermi energy is in the subgaps. While the later can give rise to the spin precession in the nanoribbon.

Therefore, the zigzag silicene nanoribbon can be used as an efficient spin filter and spin modulation device. (C) 2013 AIP Publishing LLC.

Addresses: [An, Xing-Tao] Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R

China.

[An, Xing-Tao; Zhang, Yan-Yang; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing


[Zhang, Yan-Yang] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

[Liu, Jian-Jun] Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R China.

Reprint Address: An, XT (reprint author), Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei,

Peoples R China.

E-mail Addresses: anxingtao@semi.ac.cn

ISSN: 0003-6951

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Record 263 of 495

Title: Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system

Author(s): Ma, H (Ma, Hui); Jiang, CY (Jiang, Chongyun); Liu, Y (Liu, Yu); Yu, JL (Yu, Jinling); Chen, YH

(Chen, Yonghai)


10.1063/1.4808348 Published: MAY 27 2013



Abstract: We report the experimental observation of photo-assisted generation of helicity dependent photocurrents (PA-HDPC) in a GaAs/Al0.3Ga0.7As two-dimensional electron gas, which is distinct from the circular photogalvanic effect (CPGE). The PA-HDPC is generated under suppressed configuration of

CPGE with the illumination of an obliquely incident unpolarized radiation in the system of C-2v point group symmetry. We suggest that the PA-HDPC originates from spin-orbit coupling as well as the CPGE.

The unpolarized assisted radiation, instead of the circularly polarized radiation, imposes an asymmetric

distribution of the spin-polarized carriers in the system and results in a helicity dependent photocurrent.

(C) 2013 AIP Publishing LLC.

Addresses: [Ma, Hui] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.



Reprint Address: Ma, H (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: mahui@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 0003-6951

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Record 264 of 495

Title: Magnetic Silicon Nanotube: Role of Encapsulated Europium Atoms

Author(s): Li, J (Li, Jing); Wang, J (Wang, Jing); Zhao, HY (Zhao, Hui-Yan); Liu, Y (Liu, Ying)


DOI: 10.1021/jp401090p Published: MAY 23 2013



Abstract: A europium-encapsulating silicon nanotube, Eu-2@Si-30, has been predicted by density functional theory. Electronic structure analysis shows that in Si Si chemical bonds there exist sp(2)-like hybridizations induced by the europium atoms, and the hybridizations evidently enhance the stability of the silicon nanotube. Moreover, the nanotube of Eu-2@Si-30, with D-sh symmetry, retains a high spin moment of 10 mu(B). On the basis of the Eu2Si30 Tube, a stable magnetic silicon nanotube (SiNT) was obtained, and it is found to be metallic. Similar to the predictions and speculation of Daedalus, the new magnetic SiNT may have potential applications in the fields of spintronics and high-density magnetic storage.

Addresses: [Li, Jing; Wang, Jing; Zhao, Hui-Yan; Liu, Ying] Hebei Normal Univ, Dept Phys, Shijiazhuang

050024, Hebei, Peoples R China.

[Li, Jing; Wang, Jing; Zhao, Hui-Yan; Liu, Ying] Hebei Normal Univ, Hebei Adv Thin Film Lab,

Shijiazhuang 050024, Hebei, Peoples R China.

[Wang, Jing; Zhao, Hui-Yan; Liu, Ying] Natl Key Lab Mat Simulat & Design, Beijing 100083, Peoples R

China.

[Li, Jing] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Liu, Y (reprint author), Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei,

Peoples R China.

E-mail Addresses: yliu@hebtu.edu.cn

ISSN: 1932-7447

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Record 265 of 495

Title: Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques

Author(s): Su, XJ (Su, X. J.); Xu, K (Xu, K.); Xu, Y (Xu, Y.); Ren, GQ (Ren, G. Q.); Zhang, JC (Zhang, J.

C.); Wang, JF (Wang, J. F.); Yang, H (Yang, H.)





Abstract: A study on brittle cracking in GaN films processed by laser lift-off is presented. Two kinds of cracks were found in the N-polar face of GaN after the laser lift-off process, namely perpendicular cracks along the {1-1 0 0} planes and lateral cracks along the (0 0 0-1) plane, respectively. Single-shot laser damage is studied to understand the cracking mechanism. The damage morphology indicates that the

GaN material on the edge of the laser ablation area experiences three loading modes: shear stress P-S, longitudinal compressive stress P-L and transverse tensile stress P-T. Under shock P-L, lateral cracks likely appear and extend from the illuminated region along the interface in mode I. Furthermore, two different kinds of perpendicular cracks were found, namely shear cracks (PC I) and deflection cracks (PC

II). A strong P-S gives rise to PC I while a cooperative action of P-L and P-T results in PC II. In addition,

there exist a critical effective spot size d(Pth) and a critical ratio of the laser spot size d(L) to the effective spot size d(P), when cracks occur over them.

Addresses: [Su, X. J.; Xu, K.; Ren, G. Q.; Zhang, J. C.; Wang, J. F.; Yang, H.] Chinese Acad Sci, Suzhou

Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Yang, H.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Xu, K.; Xu, Y.; Zhang, J. C.; Wang, J. F.; Yang, H.] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou


Reprint Address: Su, XJ (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou


E-mail Addresses: kxu2006@sinano.ac.cn

ISSN: 0022-3727

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Record 266 of 495

Title: Why twisting angles are diverse in graphene Moire patterns?

Author(s): Jiang, JW (Jiang, Jin-Wu); Wang, BS (Wang, Bing-Shen); Rabczuk, T (Rabczuk, Timon)


10.1063/1.4805036 Published: MAY 21 2013



Abstract: The interlayer energy of the twisting bilayer graphene is investigated by the molecular mechanics method using both the registry-dependent potential and the Lennard-Jones potential. Both potentials show that the interlayer energy is independent of the twisting angle theta, except in the two boundary regions theta approximate to 0 degrees or 60 degrees, where the interlayer energy is proportional to the square of the twisting arc length. The calculation results are successfully interpreted by a single atom model. An important information from our findings is that, from the energy point of view, there is no preference for the twisting angle in the experimental bilayer graphene samples, which actually explains the diverse twisting angles in the experiment. (C) 2013 AIP Publishing LLC.

Addresses: [Jiang, Jin-Wu; Rabczuk, Timon] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar,

Germany.

[Wang, Bing-Shen] Chinese Acad Sci, State Key Lab Semicond Superlattice & Microstruct, Beijing


[Wang, Bing-Shen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Rabczuk, Timon] Korea Univ, Sch Civil Environm & Architectural Engn, Seoul, South Korea.

Reprint Address: Jiang, JW (reprint author), Bauhaus Univ Weimar, Inst Struct Mech, Marienstr 15,

D-99423 Weimar, Germany.

E-mail Addresses: timon.rabczuk@uni-weimar.de

ISSN: 0021-8979

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Record 267 of 495

Title: Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

Author(s): Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Liu, Y (Liu, Y.); Jiang, CY (Jiang, C. Y.); Ma, H (Ma,

H.); Zhu, LP (Zhu, L. P.); Qin, XD (Qin, X. D.)


10.1063/1.4807742 Published: MAY 20 2013



Abstract: The photocurrent spectra of the inter-band photoinduced anomalous Hall effect (PAHE) in insulating GaAs/AlGaAs quantum wells have been observed at room temperature. The PAHE current changes linearly with the varied longitudinal electric fields. The anomalous Hall conductivity corresponding to excitonic state 1HH-1E (the first valence subband of heavy hole to the first conduction) has the same sign with that of excitonic state 1LH-1E (the first valence subband of light hole to the first conduction), while under uniaxial strain along the < 110 > axes, they have different signs. The PAHE current of 1HH-1E decreases linearly, but that of 1LH-1E increases linearly with shear strain. The linearly dependence of the PAHE current on uniaxial strain along the < 110 > axes suggests that the dominant mechanism is intrinsic, which has not yet been confirmed in our previous work. (C) 2013 AIP Publishing

LLC.

Addresses: [Yu, J. L.; Chen, Y. H.; Liu, Y.; Jiang, C. Y.; Ma, H.; Zhu, L. P.; Qin, X. D.] Chinese Acad Sci,


Reprint Address: Yu, JL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,



ISSN: 0003-6951

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Record 268 of 495

Title: Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics

Author(s): Yu, Y (Yu, Ying); Shang, XJ (Shang, Xiang-Jun); Li, MF (Li, Mi-Feng); Zha, GW (Zha,

Guo-Wei); Xu, JX (Xu, Jian-Xing); Wang, LJ (Wang, Li-Juan); Wang, GW (Wang, Guo-Wei); Ni, HQ (Ni,

Hai-Qiao); Dou, XM (Dou, Xiuming); Sun, BQ (Sun, Baoquan); Niu, ZC (Niu, Zhi-Chuan)


10.1063/1.4807502 Published: MAY 20 2013



Abstract: Self assembled small InAs quantum dots (SQDs) were formed in various densities and environments using gradient InAs deposition on a non-rotating GaAs substrate. Two SQD environments

(SQD I and SQD II) were characterized. SQD I featured SQDs surrounded by large QDs, and SQD II featured individual SQDs in the wetting layer (WL). Micro-photoluminescence of single QDs embedded in a cavity under various excitation powers and electric fields gave insight into carrier transport processes.

Potential fluctuations of the WL in SQD II, induced by charge redistribution, show promise for charge-tunable QD devices; SQD I shows higher luminescence intensity as a single-photon source. (C)

2013 AIP Publishing LLC.

Addresses: [Yu, Ying; Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan;

Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan] Chinese Acad Sci, Inst


Reprint Address: Yu, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &



ISSN: 0003-6951

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Record 269 of 495

Title: Mach-Zehnder-based five-port silicon router for optical interconnects

Author(s): Li, XY (Li, Xianyao); Xiao, X (Xiao, Xi); Xu, H (Xu, Hao); Li, ZY (Li, Zhiyong); Chu, T (Chu, Tao);

Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)





Abstract: We propose and fabricate a five-port silicon optical router based on Mach-Zehnder interferometer switches. Only 10 switching elements and five low-loss waveguide crossings are required in our design. Through thermal control of the switching network, we successfully demonstrate 20 possible

I/O paths of the five-port optical router at a data transmission rate of 32 Gb/s. The results here show great potential for application in ultrahigh-capacity optical interconnects. (C) 2013 Optical Society of America

Addresses: [Li, Xianyao; Xiao, Xi; Xu, Hao; Li, Zhiyong; Chu, Tao; Yu, Jinzhong; Yu, Yude] Chinese Acad





ISSN: 0146-9592

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Record 270 of 495

Title: Sensitive refractive index sensing with good operation angle polarization tolerance using a

plasmonic split-ring resonator array with broken symmetry

Author(s): Liu, JT (Liu, Jie-Tao); Xu, BZ (Xu, Bin-Zong); Xu, Y (Xu, Yun); Wei, X (Wei, Xin); Song, GF

(Song, Guo-Feng)





Abstract: A localized plasmon resonance sensor consisting of an asymmetric split-ring resonator array sustaining highly localized field energy with high refractive index sensitivity and good figure of merit is demonstrated and investigated. In the proposed 3-cut split-ring resonator structure with broken symmetry, a highly tunable transmission with a large modulation depth and a narrow resonance linewidth is obtained, which shows polarization-insensitive and angle-independent properties. Numerical calculation results show that a high sensitivity of up to 1006 nm/RIU and a figure of merit of 9.7 can be reached. This plasmonic index sensor is practically obtainable, and is expected to have potential applications for high-sensitivity convenient and efficient detection.

Addresses: [Liu, Jie-Tao; Xu, Bin-Zong; Xu, Yun; Wei, Xin; Song, Guo-Feng] Chinese Acad Sci, Inst


Reprint Address: Liu, JT (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.


ISSN: 0022-3727

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Record 271 of 495

Title: Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

Author(s): Zhou, K (Zhou, Kun); Liu, JP (Liu, Jianping); Zhang, SM (Zhang, Shuming); Li, ZC (Li,

Zengcheng); Feng, MX (Feng, Meixin); Li, DY (Li, Deyao); Zhang, LQ (Zhang, Liqun); Wang, F (Wang,

Feng); Zhu, JJ (Zhu, Jianjun); Yang, H (Yang, Hui)


10.1016/j.jcrysgro.2013.01.029 Published: MAY 15 2013



Abstract: Hillocks on c-plane homoepitaxial GaN epilayers were investigated. They were observed on epilayers grown on [1 (1) over bar 00] direction miscut free-standing GaN substrates with miscut angle not larger than 0.2 degrees and were absent when substrate miscut angle increased to 0.4 degrees.

Atomic force microscopy (AFM) and cathodoluminescence measurements reveal a close correlation between hillocks and dislocation clusters, while hillocks are absent on layers grown on GaN substrate free of dislocation clusters. We believe that the hillocks originate from spiral growth around dislocation clusters. Larger strain induced by dislocation accumulation may be responsible for the hillock formation around dislocation clusters. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zhou, Kun; Li, Zengcheng; Feng, Meixin; Yang, Hui] Chinese Acad Sci, Inst Semicond, State


[Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang,

Feng; Zhu, Jianjun; Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123,

Peoples R China.

[Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang,

Feng; Zhu, Jianjun; Yang, Hui] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123,

Peoples R China.

Reprint Address: Liu, JP (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou



ISSN: 0022-0248

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Record 272 of 495

Title: Tripartite correlations in a Heisenberg XXZ spin ring in thermal equilibrium

Author(s): Cai, JT (Cai, Jiang-Tao); Abliz, A (Abliz, Ahmad)

Source: PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS Volume: 392 Issue: 10

Pages: 2607-2614 DOI: 10.1016/j.physa.2013.01.041 Published: MAY 15 2013



Abstract: Tripartite correlations are investigated at length by various witnesses such as tripartite negativity, genuine tripartite entanglement, total tripartite correlations and genuine tripartite correlations.

Their behaviors following various tunable system parameters as well as their connections with quantum phase transitions (QPTs) in a three-qubit Heisenberg XXZ spin ring with three-spin interaction in thermal equilibrium are discussed. The results show that these tripartite correlation witnesses can faithfully detect the critical points associated with QPTs at zero temperature limit in this model. In addition, total tripartite correlations and genuine tripartite correlations can even signal critical points with respect to anisotropy

Delta at finite low temperatures. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Cai, Jiang-Tao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,


[Abliz, Ahmad] Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054, Peoples R China.

Reprint Address: Cai, JT (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: jtcai@semi.ac.cn; exmetjan@yahoo.com

ISSN: 0378-4371

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Record 273 of 495

Title: Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

Author(s): Chen, G (Chen, G.); Li, ZL (Li, Z. L.); Wang, XQ (Wang, X. Q.); Huang, CC (Huang, C. C.);

Rong, X (Rong, X.); Sang, LW (Sang, L. W.); Xu, FJ (Xu, F. J.); Tang, N (Tang, N.); Qin, ZX (Qin, Z. X.);

Sumiya, M (Sumiya, M.); Chen, YH (Chen, Y. H.); Ge, WK (Ge, W. K.); Shen, B (Shen, B.)


10.1063/1.4807131 Published: MAY 13 2013



Abstract: Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 mu m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 mu m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m(2) which gave rise to blueshift of the

ISBT wavelength and thus partially compensated its redshift with increasing well thickness. (C) 2013 AIP

Publishing LLC.

Addresses: [Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen,

B.] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R

China.

[Sang, L. W.; Sumiya, M.] Natl Inst Mat Sci NIMS, Opt & Elect Mat Unit, Tsukuba, Ibaraki 3050044,

Japan.

[Chen, Y. H.] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Ge, W. K.] Tsinghua Univ, Dept Phys, Beijing 100871, Peoples R China.

Reprint Address: Chen, G (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct &


E-mail Addresses: wangshi@pku.edu.cn; bshen@pku.edu.cn

ISSN: 0003-6951

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Record 274 of 495

Title: Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in

Mg0.2Zn0.8O/ZnO heterostructures at room temperature

Author(s): Duan, JX (Duan, J. X.); Tang, N (Tang, N.); Ye, JD (Ye, J. D.); Mei, FH (Mei, F. H.); Teo, KL

(Teo, K. L.); Chen, YH (Chen, Y. H.); Ge, WK (Ge, W. K.); Shen, B (Shen, B.)


10.1063/1.4805079 Published: MAY 13 2013



Abstract: A spin-related photocurrent with swirly distribution and anomalous dependence of the total spin-related photocurrent on the incident angle were observed on spin-polarized two-dimensional gas in a Mg0.2Zn0.8O/ZnO heterostructure under illumination of circular polarized light at room temperature.

The ferromagnetic two-dimensional Rashba model was adopted to interpret the results. It is demonstrated that a radial spin current induced by the gradient of the spin-polarized electron density is the origin of the anomalousness. This spin current only exists in spin polarized systems. (C) 2013 AIP

Publishing LLC.

Addresses: [Duan, J. X.; Tang, N.; Mei, F. H.; Ge, W. K.; Shen, B.] Peking Univ, Sch Phys, State Key Lab

Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

[Ye, J. D.] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China.

[Ye, J. D.] Australia Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200,

Australia.

[Teo, K. L.] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

[Chen, Y. H.] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Ge, W. K.] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Duan, JX (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct &


E-mail Addresses: ntang@pku.edu.cn; bshen@pku.edu.cn

ISSN: 0003-6951

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Record 275 of 495

Title: 19 mu m quantum cascade infrared photodetectors

Author(s): Zhai, SQ (Zhai, Shen-Qiang); Liu, JQ (Liu, Jun-Qi); Wang, XJ (Wang, Xue-Jiao); Zhuo, N

(Zhuo, Ning); Liu, FQ (Liu, Feng-Qi); Wang, ZG (Wang, Zhan-Guo); Liu, XH (Liu, Xi-Hui); Li, N (Li, Ning);

Lu, W (Lu, Wei)


10.1063/1.4807030 Published: MAY 13 2013



Abstract: Two InP based InGaAs/InAlAs photovoltaic quantum cascade detectors operating at peak wavelengths of 18 mu m and 19 mu m using different electronic transport mechanisms are reported. A longitudinal optical phonon extraction stair combined with energy mini-steps are employed for electron transport, which suppresses the leakage current and results in high device resistance. Altogether, this quantum design leads to 15K peak responsivity of 2.34mA/W and Johnson noise limited detectivity of 1 x

10(11) Jones at 18 mu m. (C) 2013 AIP Publishing LLC.

Addresses: [Zhai, Shen-Qiang; Liu, Jun-Qi; Wang, Xue-Jiao; Zhuo, Ning; Liu, Feng-Qi; Wang, Zhan-Guo]

Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond

Mat & Devices, Beijing 100083, Peoples R China.

[Liu, Xi-Hui; Li, Ning; Lu, Wei] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys,

Shanghai 200083, Peoples R China.

Reprint Address: Zhai, SQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,

Beijing Key Lab Low Dimens Semicond Mat & Devices, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jqliu@semi.ac.cn; fqliu@semi.ac.cn

ISSN: 0003-6951

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Record 276 of 495

Title: Surface plasmon resonance sensor based on spectral interferometry: numerical analysis

Author(s): Zhang, YF (Zhang, Yunfang); Li, H (Li, Hui); Duan, JY (Duan, Jingyuan); Shi, AC (Shi, Ancun);

Liu, YL (Liu, Yuliang)





Abstract: In this paper, we introduce a numerical simulation of a phase detecting surface plasmon resonance (SPR) scheme based on spectral interference. Based on the simulation, we propose a method to optimize various aspects of SPR sensors, which enables better performance in both measurement range (MR) and sensitivity. In the simulation, four parameters including the spectrum of the broadband light source, incident angle, Au film thickness, and refractive index of the prism coupler are analyzed. The results show that it is a good solution for better performance to use a warm white broadband (625-800 nm) light source, a divergence angle of the collimated incident light less than 0.02 degrees, and an optimized 48 nm thick Au film when a visible broadband light source is used. If a near-IR light source is used, however, the Au film thickness should be somewhat thinner according the specific spectrum. In addition, a wider MR could be obtained if a prism coupler with higher refractive index is used.

With all the parameters appropriately set, the SPR MR could be extended to 0.55 refractive index units while keeping the sensitivity at a level of 10(-8). (c) 2013 Optical Society of America

Addresses: [Zhang, Yunfang; Li, Hui; Duan, Jingyuan; Shi, Ancun; Liu, Yuliang] Chinese Acad Sci, Inst

Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Duan, JY (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,


E-mail Addresses: zhangyf10@semi.ac.cn

ISSN: 1559-128X

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Record 277 of 495

Title: GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Author(s): Li, J (Li, Jie); Guo, H (Guo, Hao); Liu, J (Liu, Jun); Tang, J (Tang, Jun); Ni, HQ (Ni, Haiqiao);

Shi, YB (Shi, Yunbo); Xue, CY (Xue, Chenyang); Niu, ZC (Niu, Zhichuan); Zhang, WD (Zhang, Wendong);

Li, MF (Li, Mifeng); Yu, Y (Yu, Ying)


10.1186/1556-276X-8-218 Published: MAY 8 2013



Abstract: As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for

MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 x 10(-9) m(2)/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

Addresses: [Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Shi, Yunbo; Xue, Chenyang; Zhang, Wendong] North

Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Shanxi,

Peoples R China.

[Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Shi, Yunbo; Xue, Chenyang; Zhang, Wendong] North Univ China,

Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Shanxi, Peoples R China.

[Ni, Haiqiao; Niu, Zhichuan; Li, Mifeng; Yu, Ying] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Tang, J (reprint author), North Univ China, Minist Educ, Key Lab Instrumentat Sci &

Dynam Measurement, Taiyuan 030051, Shanxi, Peoples R China.

E-mail Addresses: tangjun@nuc.edu.cn

ISSN: 1931-7573

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Record 278 of 495

Title: Multilayer silver nanoparticles for light trapping in thin film solar cells

Author(s): Shi, YP (Shi, Yanpeng); Wang, XD (Wang, Xiaodong); Liu, W (Liu, Wen); Yang, TS (Yang,

Tianshu); Xu, R (Xu, Rui); Yang, FH (Yang, Fuhua)


10.1063/1.4803676 Published: MAY 7 2013



Abstract: In this paper, a systematic design and analysis of thin film crystalline silicon solar cells incorporated with a new style of multilayer silver (Ag) nanoparticles (NPs) array is presented. Using numerical simulations, we showed that multilayer Ag NPs provide better light trapping than single layer

Ag NPs when the Ag NPs are located on the rear of the solar cell. Furthermore, Ag NP double layers on the rear achieved the best light absorption enhancement for solar cells. Ag NP double layers showed a

6.65% increase in intergraded quantum efficiency across the solar spectrum compared with single layer structures. The parasitic absorption occurring in Ag NP bottom layers was also discussed. (C) 2013 AIP

Publishing LLC.

Addresses: [Shi, Yanpeng; Wang, Xiaodong; Liu, Wen; Yang, Tianshu; Xu, Rui; Yang, Fuhua] Chinese


Reprint Address: Shi, YP (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


E-mail Addresses: xdwang@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 0021-8979

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Record 279 of 495

Title: Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

Author(s): Zhang, HY (Zhang, Hongyi); Chen, YH (Chen, Yonghai); Zhou, XL (Zhou, Xiaolong); Jia, YA

(Jia, Yanan); Ye, XL (Ye, Xiaoling); Xu, B (Xu, Bo); Wang, ZG (Wang, Zhanguo)


10.1063/1.4803683 Published: MAY 7 2013



Abstract: Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power. (C) 2013

AIP Publishing LLC.

Addresses: [Zhang, Hongyi] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing




Reprint Address: Zhang, HY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: hyzhang@semi.ac.cn

ISSN: 0021-8979

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Record 280 of 495

Title: Elastic properties of tetragonal BiFeO3 from first-principles calculations

Author(s): Dong, HF (Dong, Huafeng); Chen, CQ (Chen, Changqing); Wang, SY (Wang, Shanying);

Duan, WH (Duan, Wenhui); Li, JB (Li, Jingbo)


10.1063/1.4804641 Published: MAY 6 2013



Abstract: Multiferroic BiFeO3 can exist in tetragonal G-type and C-type antiferromagnetic phases with a giant c/a ratio and polarizability. In this letter, the elastic constants cij's of these tetragonal BiFeO3 phases are studied as the function of pressure using first-principles density-functional theory. We find that, except for c(44), the predicted c(ij)'s decrease with decreasing pressure (or increasing volume). When the volume is less than 11 angstrom(3)/atom (or greater than 17 angstrom(3)/atom), the c(44) of these tetragonal phases tend to zero and the structures become unstable. The tetragonal phases are predicted to be softer than the rhombohedral antiferromagnetic phase. Other elastic properties, including bulk

modulus, shear modulus, Young's modulus, Poisson's ratio, and elastic anisotropy ratios are also investigated. (C) 2013 AIP Publishing LLC.

Addresses: [Dong, Huafeng; Wang, Shanying; Duan, Wenhui] Tsinghua Univ, Dept Phys, Beijing 100084,

Peoples R China.

[Dong, Huafeng; Li, Jingbo] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond,


[Chen, Changqing] Tsinghua Univ, Dept Engn Mech, AML, Beijing 100084, Peoples R China.

[Chen, Changqing] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.



ISSN: 0003-6951

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Record 281 of 495

Title: Saturation of the junction voltage in GaN-based laser diodes

Author(s): Feng, MX (Feng, M. X.); Liu, JP (Liu, J. P.); Zhang, SM (Zhang, S. M.); Liu, ZS (Liu, Z. S.);

Jiang, DS (Jiang, D. S.); Li, ZC (Li, Z. C.); Wang, F (Wang, F.); Li, DY (Li, D. Y.); Zhang, LQ (Zhang, L. Q.);

Wang, H (Wang, H.); Yang, H (Yang, H.)


10.1063/1.4804384 Published: MAY 6 2013



Abstract: Saturation of the junction voltage in GaN-based laser diodes (LDs) is studied. It is found that there is a bump above the lasing transition in the I(dV/dI)-I curve, instead of a dip as that for GaAs-based

LDs. The bump in I(dV/dI)-I curve moves to higher currents along with the lasing threshold. A model considering ambipolar conduction and electron overflow into p-AlGaN cladding layer due to poor carrier confinement in active region is used to explain the anomaly. The characteristic temperature of

GaN-based LD is obtained by fitting threshold currents determined from I(dV/dI)-I curves. Moreover, it is found that GaN-based LDs show characteristics with a nonlinear series resistance, which may be due to the electron overflow into p-AlGaN cladding layer and the enhanced activation of Mg acceptors. (C) 2013

AIP Publishing LLC.

Addresses: [Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Wang, F.; Li, D. Y.; Zhang, L. Q.; Wang, H.;

Yang, H.] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Wang, F.; Li, D. Y.; Zhang, L. Q.; Wang, H.; Yang, H.]

Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Feng, M. X.; Liu, Z. S.; Jiang, D. S.; Yang, H.] Chinese Acad Sci, Inst Semicond, State Key Lab





ISSN: 0003-6951

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Record 282 of 495

Title: Multibistability and self-pulsation in nonlinear high-Q silicon microring resonators considering thermo-optical effect

Author(s): Zhang, LB (Zhang, Libin); Fei, YH (Fei, Yonghao); Cao, TT (Cao, Tongtong); Cao, YM (Cao,

Yanmei); Xu, QY (Xu, Qingyang); Chen, SW (Chen, Shaowu)


10.1103/PhysRevA.87.053805 Published: MAY 6 2013



Abstract: Optical bistability (BI) and self-pulsation (SP) in high-Q silicon microring resonators (MRRs) induced by thermo-optical (TO) effect and other nonlinear effects are theoretically studied with coupled mode theory and linear stability analysis method. It is found that the boundaries for both BI and SP are mainly restricted by two counteracting effects: free carrier dispersion effect and TO effect. If the refractive index changes of a MRR caused by these two effects are on the same order of magnitude, the output power will exhibit much more complicated dependence on the input power and wavelength, namely,

input-power-dependent multi-BI and multi-SP regions will exist at certain input wavelength range. The controllability of multi-BI and multi-SP phenomena by the input power and input wavelength could be very useful in all-optical nonlinear devices.

Addresses: [Zhang, Libin; Fei, Yonghao; Cao, Tongtong; Cao, Yanmei; Xu, Qingyang; Chen, Shaowu]


Reprint Address: Zhang, LB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1050-2947

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Record 283 of 495

Title: PDECO: Parallel differential evolution for clusters optimization


Shushen); Wang, LW (Wang, Linwang)

Source: JOURNAL OF COMPUTATIONAL CHEMISTRY Volume: 34 Issue: 12 Pages: 1046-1059

DOI: 10.1002/jcc.23235 Published: MAY 5 2013



Abstract: The optimization of the atomic and molecular clusters with a large number of atoms is a very challenging topic. This article proposes a parallel differential evolution (DE) optimization scheme for large-scale clusters. It combines a modified DE algorithm with improved genetic operators and a parallel strategy with a migration operator to address the problems of numerous local optima and large computational demanding. Results of LennardJones (LJ) clusters and Gupta-potential Co clusters show the performance of the algorithm surpasses those in previous researches in terms of successful rate, convergent speed, and global searching ability. The overall performance for large or challenging LJ clusters is enhanced significantly. The average number of local minimizations per hit of the global minima for Co clusters is only about 34% of that in previous methods. Some global optima for Co are also updated. We then apply the algorithm to optimize the Pt clusters with Gupta potential from the size 3 to

130 and analyze their electronic properties by density functional theory calculation. The clusters with 13,

38, 54, 75, 108, and 125 atoms are extremely stable and can be taken as the magic numbers for Pt systems. It is interesting that the more stable structures, especially magic-number ones, tend to have a larger energy gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital. It is also found that the clusters are gradually close to the metal bulk from the size N > 80 and

Pt38 is expected to be more active than Pt75 in catalytic reaction. (c) 2013 Wiley Periodicals, Inc.

Addresses: [Chen, Zhanghui; Jiang, Xiangwei; Li, Jingbo; Li, Shushen] Chinese Acad Sci, Inst Semicond,


[Wang, Linwang] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720

USA.

Reprint Address: Chen, ZH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab



ISSN: 0192-8651

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Record 284 of 495

Title: The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray

Photoelectron Spectroscopy

Author(s): Wan, XJ (Wan Xiao-Jia); Wang, XL (Wang Xiao-Liang); Xiao, HL (Xiao Hong-Ling); Wang, CM

(Wang Cui-Mei); Feng, C (Feng Chun); Deng, QW (Deng Qing-Wen); Qu, SQ (Qu Shen-Qi); Zhang, JW

(Zhang Jing-Wen); Hou, X (Hou Xun); Cai, SJ (Cai Shu-Jun); Feng, ZH (Feng Zhi-Hong)


10.1088/0256-307X/30/5/057101 Published: MAY 2013



Abstract: The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be

0.13 +/- 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of similar to 0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN

heterojunction exhibits a type-I band alignment.

Addresses: [Wan Xiao-Jia; Wang Xiao-Liang; Xiao Hong-Ling; Wang Cui-Mei; Feng Chun; Deng

Qing-Wen; Qu Shen-Qi] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

[Wang Xiao-Liang] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R

China.

[Wang Xiao-Liang; Zhang Jing-Wen; Hou Xun] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian


[Cai Shu-Jun; Feng Zhi-Hong] Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China.




ISSN: 0256-307X

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Record 285 of 495

Title: AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature

Author(s): Zhang, L (Zhang, Lu); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Chen, H (Chen,

Hong); Feng, C (Feng, Chun); Shen, GD (Shen, Guangdi); Wang, ZG (Wang, Zhanguo); Hou, X (Hou,

Xun)

Source: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS Volume: 62 Issue: 2 Article

Number: DOI: 10.1051/epjap/2013120390 Published: MAY 2013



Abstract: The AlGaN/GaN/InGaN/GaN double heterojunction high electron mobility transistors

(DH-HEMTs) sample has been grown by MOCVD on (0 0 0 1) sapphire substrate. The structure features a 7 nm In0.046Ga0.954N interlayer determined by Rutherford backscattering (RBS). Since the polarization field in the InGaN interlayer is opposite to it in the AlGaN layer, an additional potential barrier is introduced between the two-dimensional electron gas (2DEG) channel and buffer, leading to enhanced carrier confinement and improved buffer isolation. The GaN layers between the AlGaN layer and InGaN interlayer are divided into two layers consisting of GaN channel layer which provides high mobility 2DEG grown at 1070 degrees C and GaN spacer layer grown at the same temperature as InGaN interlayer (800 degrees C) to prevent indium diffusion. RBS measurement confirms that the 3 nm GaN spacer layer isolates the InGaN interlayer well and free from diffusion. Hall measurement has been performed, the mobility as high as 1552 cm(2)/V s at room temperature is obtained and the sheet carrier density is 1.55 x

10(13) cm(-2). The average sheet resistance is 331 Omega/sq, respectively. The mobility obtained in this paper is about 20% higher than similar structures reported.

Addresses: [Zhang, Lu; Shen, Guangdi] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing


[Zhang, Lu; Wang, Xiaoliang; Xiao, Hongling; Chen, Hong; Feng, Chun; Wang, Zhanguo] Chinese Acad

Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Hou, Xun] Xi An Jiao Tong Univ, Xian 710049, Peoples R China.

Reprint Address: Zhang, L (reprint author), Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing



ISSN: 1286-0042

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Record 286 of 495

Title: Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN

Author(s): Yin, CM (Yin, Chunming); Yuan, HT (Yuan, Hongtao); Wang, XQ (Wang, Xinqiang); Liu, ST

(Liu, Shitao); Zhang, S (Zhang, Shan); Tang, N (Tang, Ning); Xu, FJ (Xu, Fujun); Chen, ZY (Chen,

Zhuoyu); Shimotani, H (Shimotani, Hidekazu); Iwasa, Y (Iwasa, Yoshihiro); Chen, YH (Chen, Yonghai);

Ge, WK (Ge, Weikun); Shen, B (Shen, Bo)

Source: NANO LETTERS Volume: 13 Issue: 5 Pages: 2024-2029 DOI: 10.1021/nl400153p

Published: MAY 2013



Abstract: Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect

(CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on

InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

Addresses: [Yin, Chunming; Wang, Xinqiang; Liu, Shitao; Zhang, Shan; Tang, Ning; Xu, Fujun; Shen, Bo]

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R

China.

[Yuan, Hongtao; Chen, Zhuoyu; Shimotani, Hidekazu; Iwasa, Yoshihiro] Univ Tokyo, Quantum Phase

Elect Ctr, Tokyo 1138656, Japan.

[Yuan, Hongtao; Chen, Zhuoyu; Shimotani, Hidekazu; Iwasa, Yoshihiro] Univ Tokyo, Dept Appl Phys,

Tokyo 1138656, Japan.

[Chen, Yonghai] Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R

China.

[Ge, Weikun] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Wang, XQ (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct &


E-mail Addresses: wangshi@pku.edu.cn; bshen@pku.edu.cn

ISSN: 1530-6984

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Record 287 of 495

Title: Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

Author(s): Ma, L (Ma Li); Zhu, HL (Zhu Hong-Liang); Liang, S (Liang Song); Zhao, LJ (Zhao Ling-Juan);

Chen, MH (Chen Ming-Hua)


10.1088/1674-1056/22/5/054211 Published: MAY 2013



Abstract: Monolithic integration of four 1.55-mu m-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 x 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.

Addresses: [Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan] Chinese Acad Sci, Inst Semicond, Key


[Ma Li; Chen Ming-Hua] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.




ISSN: 1674-1056

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Record 288 of 495

Title: Optimized geometry and electronic structure of graphyne-like silicyne nanoribbons

Author(s): Pei, Y (Pei Yang); Wu, HB (Wu Hai-Bin)


10.1088/1674-1056/22/5/057303 Published: MAY 2013



Abstract: Silicyne, a silicon allotrope, which is closely related to silicene and has graphyne-like structure,

is theoretically investigated in this work. Its optimized geometry and electronic band structure are calculated by means of the first-principles frozen-core projector-augmented wave method implemented in the Vienna ab initio simulation package (VASP). We find that the lattice parameter is 9.5 angstrom, the silicon chain between hexagons is composed of disilynic linkages (-Si equivalent to Si-) rather than cumulative linkages (=Si=Si=), and the binding energy is -3.41 eV per atom. The band structure is calculated by adopting the generalized gradient approximation and hybrid functionals. The band gap produced by the HSE06 functional is 0.73 eV, which is nearly triple that by the generalized gradient approximation of Perdew-Burke-Ernzerhof functional.

Addresses: [Pei Yang; Wu Hai-Bin] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


Reprint Address: Pei, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


E-mail Addresses: ypei@semi.ac.cn

ISSN: 1674-1056

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Record 289 of 495

Title: The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals

Author(s): Wang, HY (Wang Hua-Yong); Xu, XS (Xu Xing-Sheng)


10.1088/1674-1056/22/5/054205 Published: MAY 2013



Abstract: An electrically driven, single-longitudinal-mode GaAs based photonic crystal (PC) ridge waveguide (RWG) laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma (ICP) etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.

Addresses: [Wang Hua-Yong; Xu Xing-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Xu, XS (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xsxu@semi.ac.cn

ISSN: 1674-1056

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Record 290 of 495

Title: High sensitivity Hall devices with AlSb/InAs quantum well structures

Author(s): Zhang, Y (Zhang Yang); Zhang, YW (Zhang Yu-Wei); Wang, CY (Wang Cheng-Yan); Guan, M

(Guan Min); Cui, LJ (Cui Li-Jie); Li, YY (Li Yi-Yang); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu

Zhan-Ping); Zeng, YP (Zeng Yi-Ping)


10.1088/1674-1056/22/5/057106 Published: MAY 2013



Abstract: AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm(2).V-1.s(-1) has been achieved for an InAs channel of 22.5 nm.

The Hall devices with high sensitivity and good temperature stability were fabricated based on the

AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

Addresses: [Zhang Yang] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Zhang Yang; Zhang Yu-Wei; Wang Cheng-Yan; Guan Min; Cui Li-Jie; Li Yi-Yang; Wang Bao-Qiang; Zhu

Zhan-Ping; Zeng Yi-Ping] Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R

China.

Reprint Address: Zhang, Y (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing


E-mail Addresses: zhang_yang@semi.ac.cn

ISSN: 1674-1056

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Record 291 of 495

Title: Multi-walled carbon nanotube as a saturable absorber for a passively mode-locked Nd:YVO4 laser

Author(s): Lin, XC (Lin, Xue Chun); Zhang, L (Zhang, Ling); Tsang, YH (Tsang, Yuen H.); Wang, YG

(Wang, Yong Gang); Yu, HJ (Yu, Hai Juan); Yan, SL (Yan, Shi Lian); Sun, W (Sun, Wei); Yang, YY (Yang,

Ying Ying); Han, ZH (Han, Zehua); Hou, W (Hou, Wei)


10.1088/1612-2011/10/5/055805 Published: MAY 2013



Abstract: Within the family of carbon nanotubes, multi-walled carbon nanotube material has the advantages of low-cost and high laser damage threshold. Therefore, in principle, it is more suitable for high power laser applications. In this letter, a high power continuous wave mode-locking Nd:YVO4 laser using a multi-walled carbon nanotube absorber has been successfully demonstrated. An average output power as high as 1.4 W has been achieved with a slope efficiency of 24%. The repetition rate and pulse width of the mode-locked laser were 68 MHz and 15.5 ps, respectively. The calculated pulse energy and peak power were 20.6 nJ and 1.33 kW, respectively.

Addresses: [Lin, Xue Chun; Zhang, Ling; Yu, Hai Juan; Yan, Shi Lian; Sun, Wei; Yang, Ying Ying; Han,

Zehua; Hou, Wei] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083,

Peoples R China.

[Tsang, Yuen H.] HongKong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China.

[Tsang, Yuen H.] HongKong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China.

[Wang, Yong Gang] Chinese Acad Sci, Xian Inst Opt & Precis Mech, China State Key Lab Transient Opt

& Photon, Xian, Peoples R China.

Reprint Address: Lin, XC (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light


E-mail Addresses: Yuen.Tsang@polyu.edu.hk; chinawygxjw@opt.ac.cn

ISSN: 1612-2011

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Record 292 of 495

Title: Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method

Author(s): Liu, JM (Liu, Jingming); Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Yang, FY

(Yang, Fengyun); Wang, FH (Wang, Fenghua); Cao, KW (Cao, Kewei); Liu, T (Liu, Tong); Xie, H (Xie,

Hui); Chen, T (Chen, Teng)

Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 31 Issue: 3 Article

Number: 031404 DOI: 10.1116/1.4798309 Published: MAY 2013



Abstract: Residual impurities and contamination on semi-insulating (SI) InP wafers are detrimental for epitaxial growth and device performance, especially because residual silicon on an SI-InP wafer surface is electrically active and generates an n-type conduction layer at the interface between the epilayer and the InP substrate. In order to reduce the concentration of Si and improve surface quality, the authors investigate a wet-chemical cleaning process for ready-to-use InP substrates. A novel and practical cleaning process was developed by adding an alkaline solution to the conventional acidic cleaning process. Time-of-flight secondary mass spectrometry, a very powerful analysis technique to characterize surfaces and investigate any organic and inorganic contamination present on the InP surface, was used after the samples were etched under different cleaning processes. The results show that the novel etching process effectively reduces the Si contamination. (C) 2013 American Vacuum Society.

Addresses: [Liu, Jingming; Zhao, Youwen; Dong, Zhiyuan; Yang, Fengyun; Wang, Fenghua; Cao, Kewei;

Liu, Tong; Xie, Hui; Chen, Teng] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing


Reprint Address: Liu, JM (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond,

POB 912,A35,Qinghua East Rd, Beijing 100083, Peoples R China.

E-mail Addresses: liujm10@semi.ac.cn

ISSN: 0734-2101

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Record 293 of 495

Title: Perpendicularly magnetized MnxGa films: promising materials for future spintronic devices, magnetic recording and permanent magnets

Author(s): Zhu, LJ (Zhu, Lijun); Zhao, JH (Zhao, Jianhua)


Pages: 379-387 DOI: 10.1007/s00339-013-7608-4 Published: MAY 2013



Abstract: In this article, we review the recent progress in synthesis, characterization and related spintronic devices of tetragonal MnxGa alloys with L1(0) or D0(22) ordering. After a brief introduction to the growing demands for perpendicularly magnetized materials and the prospective candidate of MnxGa, we focus on lattice structures and synthesis of MnxGa bulks, and epitaxial growth, structural characterization and magnetic properties of MnxGa films. Then we discuss effective ways to tailor and improve the structure and magnetism for possible applications in spintronics, magnetic recording and permanent magnets. Finally, we outline the recent progress in spin polarization, magnetic damping, magneto-optical and magneto-transport behaviors and thermal and chemical stability of MnxGa films and related spintronic devices like magnetic tunneling junctions, spin valves and spin injectors into semiconductors.

Addresses: [Zhu, Lijun; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &





ISSN: 0947-8396

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Record 294 of 495

Title: Numerical study of radial temperature distribution in the AlN sublimation growth system

Author(s): Li, HJ (Li, Huijie); Liu, XL (Liu, Xianglin); Feng, YX (Feng, Yuxia); Wei, HY (Wei, Hongyuan);

Yang, SY (Yang, Shaoyan)

Source: CRYSTAL RESEARCH AND TECHNOLOGY Volume: 48 Issue: 5 Pages: 321-327 DOI:

10.1002/crat.201300064 Published: MAY 2013



Abstract: A large radial temperature gradient in the AlN sublimation growth system would lead to non-uniform growth rate along the radial direction and introduce thermal stress in the as grown crystal. In this paper, we have numerically studied the radial thermal uniformity in the crucible of a AlN sublimation growth system. The temperature difference on the source top surface is insignificant while the radial temperature gradient on the lid surface is too large to be neglected. The simulation results showed that the crucible material with a large thermal conductivity is beneficial to obtain a uniform temperature distribution on the lid surface. Moreover, it was found that the temperature gradient on the lid surface decreases with increased lid thickness and decreased top window size.

Addresses: [Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan] Chinese Acad Sci, Inst


Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: hjli2009@semi.ac.cn

ISSN: 0232-1300

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Record 295 of 495

Title: Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A

Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Author(s): Gong, X (Gong, Xiao); Han, GQ (Han, Genquan); Liu, B (Liu, Bin); Wang, LX (Wang,

Lanxiang); Wang, W (Wang, Wei); Yang, Y (Yang, Yue); Kong, EYJ (Kong, Eugene Yu-Jin); Su, SJ (Su,

Shaojian); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Yeo, YC (Yeo, Yee-Chia)


DOI: 10.1109/TED.2013.2255057 Published: MAY 2013



Abstract: We report a novel common gate-stack solution for In0.7Ga0.3As n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs), featuring sub-400 degrees C Si2H6 passivation, sub-1.75-nm capacitance equivalent thickness (CET), and single TaN metal gate. By incorporating Si2H6 passivation, an ultrathin SiO2/Si interfacial layer is formed between the high-k gate dielectric and the high mobility InGaAs and GeSn channels. The In0.7Ga0.3As nMOSFET and

Ge0.97Sn0.03 pMOSFET show drive currents of similar to 143 and similar to 69 mu A/mu m, respectively, at vertical bar VDS vertical bar and vertical bar VGS-VTH vertical bar of 1V for a gate length L-G of 4 mu m. At an inversion carrier density N-inv of 10(13) cm(-2), In0.7Ga0.3 As nMOSFETs and Ge0.97Sn0.03 pMOSFETs show electron and hole mobilities of similar to 495 and similar to 230 cm(2)/V.s, respectively.

At Ninv of 4 x 1012 cm-2, electron and hole mobility values of similar to 705 and similar to 346 cm(2)/V.s are achieved. Symmetric V-TH is realized by choosing a metal gate with midgap work function, and CET of less than 1.75nm is demonstrated with a gate-leakage current density (JG) of less than 10(-4)A/cm(2) at a gate bias of V-TH +/- 1V. Using this gate-stack, a Ge0.95Sn0.05 pMOSFET with the shortest L-G of

200nm is also realized. Drive current of similar to 680 mu A/mu m is achieved at V-DS of -1.5V and V-GS

- V-TH of -2V, with peak intrinsic transconductance G(m,int) of similar to 492 mu S/mu m at V-DS of -1.1V.

Addresses: [Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong,

Eugene Yu-Jin; Yeo, Yee-Chia] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576,

Singapore.

[Su, Shaojian] Huaqiao Univ, Xiamen 361021, Peoples R China.

[Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Gong, X (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, Singapore

117576, Singapore.

E-mail Addresses: g0801802@nus.edu.sg; lanxiang@nus.edu.sg; elewwei@nus.edu.sg; hangenquan@ieee.org; liubin@nus.edu.sg; yue_yang@nus.edu.sg; eugkong@gmail.com; sushao-jian@hqu.edu.cn; clxue@semi.ac.cn; cbw@semi.ac.cn; yeo@ieee.org

ISSN: 0018-9383

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Record 296 of 495

Title: Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an

AlN Back Barrier

Author(s): Kong, X (Kong, Xin); Wei, K (Wei, Ke); Liu, GG (Liu, Guoguo); Liu, XY (Liu, Xinyu); Wang, CM

(Wang, Cuimei); Wang, XL (Wang, Xiaoliang)


10.7567/APEX.6.051201 Published: MAY 2013



Abstract: An ultrathin AlN layer is inserted between the GaN channel and buffer in the fabrication of deep-submicrometer AlGaN/GaN high-electron-mobility transistors (HEMTs). The wide bandgap of AlN establishes a high back barrier and thus enhances the confinement of two-dimensional electron gas under high drain bias voltages. Owning to the effective suppression of short-channel effects in the device with a highly scaled gate length, the fabricated AlN back barrier HEMTs show better pinch-off quality, lower subthreshold current, lower drain-induced barrier lowering factor, and better high-frequency response than the reference device without an AlN back barrier. (C) 2013 The Japan Society of Applied

Physics

Addresses: [Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu] Chinese Acad Sci, Inst Microelect, Microwave

Devices & Integrated Circuits Dept, Beijing 100029, Peoples R China.

[Wang, Cuimei; Wang, Xiaoliang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, XY (reprint author), Chinese Acad Sci, Inst Microelect, Microwave Devices &

Integrated Circuits Dept, Beijing 100029, Peoples R China.

E-mail Addresses: xyliu@ime.ac.cn

ISSN: 1882-0778

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Record 297 of 495

Title: Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow

Quantum Well

Author(s): Li, HJ (Li, Hongjian); Li, PP (Li, Panpan); Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Zhang, YY

(Zhang, Yiyun); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Li, JM (Li, Jinmin); Wang, GH

(Wang, Guohong)


10.7567/APEX.6.052102 Published: MAY 2013



Abstract: InGaN-based green light-emitting diodes (LEDs) with low-indium-composition shallow quantum well (SQW) inserted before the InGaN emitting layer are investigated theoretically and experimentally.

Numerical simulation results show an increase of the overlap of electron-hole wave functions and a reduction of electrostatic field within the active region of the SQW LED, compared to those of the conventional LED. Photoluminescence (PL) measurements exhibit reduced full width at half maximum

(FWHM) and increased PL intensity for the SQW LED. A 28.9% enhancement of output power at 150 mA for SQW LED chips of 256 x 300 mu m(2) size is achieved. (c) 2013 The Japan Society of Applied

Physics

Addresses: [Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi,

Xiaoyan; Li, Jinmin; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr,


[Zhang, Yiyun] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr,



ISSN: 1882-0778

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Record 298 of 495

Title: Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations

Author(s): Lin, LZ (Lin, Liang-Zhong); Cheng, F (Cheng, F.); Zhang, D (Zhang, D.); Lou, WK (Lou,

Wen-Kai); Zhang, LB (Zhang, Le-Bo)


10.1016/j.ssc.2013.02.023 Published: MAY 2013



Abstract: We theoretically investigate the electron transport through a quantum spin Hall bar in the presence of periodic potential modulations. We find that the edge states show different behaviors for the periodic electric potential modulation in the proposed structures. The backscattering process can be controlled by tuning the electric potential modulation. Crown Copyright (C) 2013 Published by Elsevier

Ltd. All rights reserved.

Addresses: [Lin, Liang-Zhong; Zhang, D.; Lou, Wen-Kai] Chinese Acad Sci, Inst Semicond, SKLSM,


[Cheng, F.] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R

China.

[Zhang, Le-Bo] Hunan Normal Univ, Dept Phys, Changsha 410012, Hunan, Peoples R China.

Reprint Address: Lin, LZ (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing


E-mail Addresses: lzlin@semi.ac.cn

ISSN: 0038-1098

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Record 299 of 495

Title: Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire

Transistors

Author(s): Li, XM (Li, Xiaoming); Han, WH (Han, Weihua); Ma, LH (Ma, Liuhong); Wang, H (Wang, Hao);

Zhang, YB (Zhang, Yanbo); Yang, FH (Yang, Fuhua)


10.1109/LED.2013.2250898 Published: MAY 2013



Abstract: A single n-channel junctionless nanowire transistor is fabricated and characterized for low-temperature quantum transport behavior. Transfer characteristics exhibit current oscillations below flat-band voltage (V-FB) up to temperature 75 K, possibly due to cotunneling through unintentional quantum dots. Furthermore, regular current steps are observed above VFB, that is, each current plateau corresponds to a fully populated subband. Experimental result of transconductance peaks indicates that the subband energy spacing in the 1-D channel agrees well with theoretical prediction.

Addresses: [Li, Xiaoming; Han, Weihua; Ma, Liuhong; Wang, Hao; Zhang, Yanbo; Yang, Fuhua] Chinese

Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

Reprint Address: Li, XM (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond



ISSN: 0741-3106

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Record 300 of 495

Title: Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors

(p-MOSFETs) with ammonium sulfide passivation

Author(s): Wang, LX (Wang, Lanxiang); Su, SJ (Su, Shaojian); Wang, W (Wang, Wei); Gong, X (Gong,

Xiao); Yang, Y (Yang, Yue); Guo, PF (Guo, Pengfei); Zhang, GZ (Zhang, Guangze); Xue, CL (Xue,

Chunlai); Cheng, BW (Cheng, Buwen); Han, GQ (Han, Genquan); Yeo, YC (Yeo, Yee-Chia)

Source: SOLID-STATE ELECTRONICS Volume: 83 Pages: 66-70 DOI: 10.1016/j.sse.2013.01.031

Published: MAY 2013



Abstract: High-mobility strained Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH4)(2)S] surface passivation were demonstrated. A similar to 10 nm thick fully-strained single crystalline GeSn layer was epitaxially grown on Ge (1 0 0) substrate as the channel layer. (NH4)(2)S surface passivation was performed for the GeSn surface, followed by gate stack formation. Ge0.958Sn0.042 p-MOSFETs with (NH4)(2)S passivation show decent electrical characteristics and a peak effective mobility of 509 cm(2)/V s, which is the highest reported peak mobility obtained for GeSn channel p-MOSFETs so far. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Wang, Lanxiang; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Han, Genquan; Yeo,

Yee-Chia] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

[Wang, Lanxiang; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Han, Genquan; Yeo, Yee-Chia] Natl

Univ Singapore, NUS Grad Sch Integrat Sci & Engn NGS, Singapore 117576, Singapore.

[Su, Shaojian; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State


Reprint Address: Han, GQ (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, 10 Kent Ridge

Crescent, Singapore 119260, Singapore.

E-mail Addresses: hangenquan@ieee.org; yeo@ieee.org

ISSN: 0038-1101

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Record 301 of 495

Title: n-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation

Author(s): Xu, B (Xu, Bin); Li, CB (Li, Chuanbo); Myronov, M (Myronov, Maksym); Fobelets, K (Fobelets,

Kristel)

Source: SOLID-STATE ELECTRONICS Volume: 83 Pages: 107-112 DOI:

10.1016/j.sse.2013.01.038 Published: MAY 2013



Abstract: The output power of a discrete assembly of n-Si-p-Si1-xGex (0 <= x <= 0.4) thermoelectric generators is measured as a function of load resistance. The influence of Ge content and nanowire structures on the performance of thermoelectric devices is evaluated in measurements around room temperature. The nanowire arrays are etched using a metal induced local oxidation and etching process, based on self-assembled Ag nanoparticles and HF. The use of nanowires and SiGe with dimensions smaller than 30 mu m, is beneficial for an improvement of, at least, a factor of 10 in the output power.

However, better performance improvements can be obtained by optimising the thermal and electrical contact resistances at the interfaces. Optimisation of the electrical contact results in a performance boost by a factor of 25. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Xu, Bin; Li, Chuanbo; Fobelets, Kristel] Univ London Imperial Coll Sci Technol & Med, Dept

Elect & Elect Engn, London SW7 2AZ, England.

[Li, Chuanbo] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

[Myronov, Maksym] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England.

Reprint Address: Li, CB (reprint author), Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect

Engn, Exhibit Rd, London SW7 2AZ, England.

E-mail Addresses: cbli@semi.ac.cn; k.fobelets@imperial.ac.uk

ISSN: 0038-1101

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Record 302 of 495

Title: Mode analysis for metal-coated nanocavity by three-dimensional S-matrix method

Author(s): Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Zou, LX

(Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Long, H (Long, Heng); Xiao, JL (Xiao, Jin-Long); Guo, CC (Guo,

Chu-Cai)

Source: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS Volume: 30

Issue: 5 Pages: 1335-1341 DOI: 10.1364/JOSAB.30.001335 Published: MAY 2013



Abstract: Three-dimensional scattering matrix method is proposed to investigate mode characteristics for metal-coated nanocavities, with the vertical waveguide structure of an active region confined by upper and lower cladding layers. For a nanocavity with radius of 800 nm, Q factors of well-confined modes with wavelength around 1550 nm first decrease with the increase of the metallic layer thickness due to the metallic absorption and the increase of radiation loss as the metallic layer thickness is less than 10 nm, and then rise with the increase of the metallic layer. However, for a weak confined nanocavity with a radius of 500 nm, the mode Q factor increases with the metallic layer thickness first, reaches a maximum value at an optimal metallic thickness, then decrease with the further increase of the metallic layer. For nanocavities confined by a thick metallic layer, the Q factors approach constants limited by the metallic absorption. However, mode field patterns, including the vertical field distributions, are affected by the metallic layer, which not only influences the metallic layer absorption but also the optical confinement factor in the active region. (C) 2013 Optical Society of America

Addresses: [Yao, Qi-Feng; Huang, Yong-Zhen; Yang, Yue-De; Zou, Ling-Xiu; Lv, Xiao-Meng; Long, Heng;

Xiao, Jin-Long; Guo, Chu-Cai] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,





ISSN: 0740-3224

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Record 303 of 495

Title: The quantification of quantum nonlocality by characteristic function

Author(s): Wen, W (Wen Wei)

Source: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY Volume: 56 Issue: 5 Pages:

947-951 DOI: 10.1007/s11433-013-5045-1 Published: MAY 2013



Abstract: We propose a way to measure the strength of quantum nonlocal correlation (QNC) based on the characteristic function, which is defined as a response function under the local quantum measurement in a composite system. It is found that the strength of QNC based on the characteristic function is a half-positive-definite function and does not change under any LU operation. Generally, we give a new definition for quantum entanglement using the strength function. Furthermore, we also give a separability-criterion for 2 x m-dimensional mixed real matrix. This paper proposes an alternative way for

QNC further research.

Addresses: Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,

Peoples R China.

Reprint Address: Wen, W (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: chuxiangzi@semi.ac.cn

ISSN: 1674-7348

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Record 304 of 495

Title: Carrier-Induced Silicon Bragg Grating Filters With a p-i-n Junction

Author(s): Fang, Q (Fang, Qing); Song, JF (Song, Jun Feng); Tu, XG (Tu, Xiaoguang); Jia, LX (Jia,

Lianxi); Luo, XS (Luo, Xianshu); Yu, MB (Yu, Mingbin); Lo, GQ (Lo, Guo Qiang)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 9 Pages: 810-812 DOI:

10.1109/LPT.2013.2252611 Published: MAY 1 2013



Abstract: In this letter, we present a carrier-induced silicon waveguide Bragg grating filter with a p-i-n junction. The carrier-induced Bragg grating is formed on the rib silicon waveguide by ion implantation technology. The bandwidth and the extinction ratio of the filter are 0.3 nm and 14 dB, respectively. It can be tuned by both forward and reverse biases. The central wavelength shifting rates under forward and reverse biases are 1.35 and 0.52 pm/V, respectively. The extinction ratio can also be tuned. At the forward bias of 1.5 V, the extinction ratio is reduced from 14 to 5 dB.

Addresses: [Fang, Qing; Song, Jun Feng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo

Qiang] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore.

[Fang, Qing; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo Qiang] Chinese Acad Sci,

Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Song, Jun Feng] Jilin Univ, Coll Elect Sci & Engn, Changchun 100015, Jilin, Peoples R China.

Reprint Address: Fang, Q (reprint author), Agcy Sci Technol & Res, Inst Microelect, Singapore 117685,

Singapore.

E-mail Addresses: fangq@ime.a-star.edu.sg; Songjf@ime.a-star.edu.sg; tux@ime.a-star.edu.sg; jialx@ime.a-star.edu.sg; luox@ime.a-star.edu.sg; mingbin@ime.a-star.edu.sg; logq@ime.a-star.edu.sg

ISSN: 1041-1135

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Record 305 of 495

Title: Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs

Author(s): Zhan, T (Zhan, Teng); Zhang, Y (Zhang, Yang); Ma, J (Ma, Jun); Tian, T (Tian, Ting); Li, J (Li,

Jing); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Guo, JX (Guo, Jinxia); Wang, GH (Wang, Guohong);

Li, JM (Li, Jinmin)





Abstract: In this letter, GaN-based high-voltage light-emitting diodes (HV-LEDs) arrays with 16 microchips connected in series are fabricated. The light output power-current-voltage (LOP-I-V) characteristic of HV-LEDs is measured. Under input power of 1.1 W, the LOP of HV-LEDs is enhanced by

11.9% compared to traditional high power light-emitting diodes (THP-LEDs) with the same chip size. Due to the reduced metal shadow effect and better current spread, the HV-LEDs exhibit higher light extraction efficiency under the same current density, which is simulated by a 3-D ray tracing method. As a result, the

luminous efficiency of HV-LEDs is 21.6% higher than that of THP-LEDs under input power of 1.1 W.

Furthermore, the efficiency droop of HV-LEDs is reduced to half of that of THP-LEDs.

Addresses: [Zhan, Teng; Zhang, Yang; Ma, Jun; Tian, Ting; Li, Jing; Liu, Zhiqiang; Yi, Xiaoyan; Guo,

Jinxia; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res &

Dev Ctr, Beijing 100083, Peoples R China.

Reprint Address: Zhan, T (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


E-mail Addresses: tianting@semi.ac.cn; zhanteng10@semi.ac.cn; lijing2006@semi.ac.cn; zhangy@semi.ac.cn; lzq@semi.ac.cn; guojinxia@semi.ac.cn; ghwang@red.semi.ac.cn; jmli@red.semi.ac.cn majun@semi.ac.cn; spring@semi.ac.cn;

ISSN: 1041-1135

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Record 306 of 495

Title: High Efficiency Broadband Polarization Converter Based on Tapered Slot Waveguide

Author(s): Fei, YH (Fei, Yonghao); Zhang, LB (Zhang, Libin); Cao, TT (Cao, Tongtong); Cao, YM (Cao,

Yanmei); Chen, SW (Chen, Shaowu)





Abstract: A novel high efficiency broadband polarization converter based on an adiabatic tapered vertical slot waveguide is proposed and analyzed. Unlike previously reported tapered polarization converters, this device converts the first-order TM/TE mode into the first-order TE/TM mode. The structure utilizes a vertical slot waveguide, which only needs a one-mask etching process. The bandwidth is ultrawide, similar to 100 nm (1500-1600 nm) with a conversion efficiency of > 98%. The total length of the polarization converter is 116 mu m, and its minimum fabrication tolerance is acceptable for modern nanofabrication technology.

Addresses: [Fei, Yonghao; Zhang, Libin; Cao, Tongtong; Cao, Yanmei; Chen, Shaowu] Chinese Acad Sci,

State Key Lab Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Fei, YH (reprint author), Chinese Acad Sci, State Key Lab Optoelect, Inst Semicond,


E-mail Addresses: feiyonghao@semi.ac.cn; ymeicao@semi.ac.cn; swchen@semi.ac.cn zhanglibin@semi.ac.cn; ttcao@semi.ac.cn;

ISSN: 1041-1135

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Record 307 of 495

Title: Surface plasmon resonance enhanced ellipsometric analysis for monitoring of cobalt electrochemical reaction in solution

Author(s): Wang, ZZ (Wang, Zhenzhen); Liu, W (Liu, Wei); Wang, CX (Wang, Chunxia); Kan, Q (Kan,

Qiang); Chen, S (Chen, She); Chen, HD (Chen, Hongda)

Source: SENSORS AND ACTUATORS B-CHEMICAL Volume: 181 Pages: 221-226 DOI:

10.1016/j.snb.2013.01.044 Published: MAY 2013



Abstract: Cobalt-based ion selective electrode (ISE) is one of the key methods for phosphate detection.

In this paper, surface plasmon resonance (SPR) enhanced ellipsometric analysis method has been used to monitor the electrochemical reaction process at Co ISE sensor surface and the mass consumption of sensitive electrode membranes. An Au-Co bilayer film is designed as optical detection interface. In order to obtain detectable reflection intensity variation with Co thickness, Au film and Co film thickness are optimized at TM polarization state. According to the calculation results, 50 nm Au film is formed on glass substrate by electron beam evaporation. Then cobalt film with thickness of about 20 nm is grown on gold film by electrochemical deposition method. Ellipsometric measurements were performed at SPR angle

59. The consuming process of Co film reacting with dissolved oxygen in deionized water has been obtained by monitoring the change of reflection intensity. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Wang, Zhenzhen; Wang, Chunxia; Kan, Qiang; Chen, Hongda] Chinese Acad Sci, Inst


[Wang, Zhenzhen] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Liu, Wei; Chen, She] Chinese Acad Sci, Inst Mech, Dept Natl Micrograv Lab, Beijing 100083, Peoples R

China.

Reprint Address: Wang, CX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: cxwang@semi.ac.cn

ISSN: 0925-4005

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Record 308 of 495

Title: Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Author(s): Ji, D (Ji, Dong); Lu, YW (Lu, Yanwu); Liu, B (Liu, Bing); Liu, GP (Liu, Guipeng); Zhu, QS (Zhu,

Qinsheng); Wang, ZG (Wang, Zhanguo)

Source: THIN SOLID FILMS Volume: 534 Pages: 655-658 DOI: 10.1016/j.tsf.2013.03.028




Abstract: The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

(HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in

Al2O3/AlGaN/GaN double heterojunction HEMTs with thin Al2O3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n(s), shows that TF scattering acts as the main limitation when ns exceeds 2 x 10(12) cm(-2). The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. (C) 2013 Elsevier B.

V. All rights reserved.

Addresses: [Ji, Dong; Lu, Yanwu; Liu, Bing] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R

China.

[Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Lu, YW (reprint author), Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R

China.

E-mail Addresses: ywlu@bjtu.edu.cn

ISSN: 0040-6090

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Record 309 of 495

Title: Strain Field Mapping of Dislocations in a Ge/Si Heterostructure

Author(s): Liu, QL (Liu, Quanlong); Zhao, CW (Zhao, Chunwang); Su, SJ (Su, Shaojian); Li, JJ (Li, Jijun);

Xing, YM (Xing, Yongming); Cheng, BW (Cheng, Buwen)

Source: PLOS ONE Volume: 8 Issue: 4 Article Number: e62672 DOI:

10.1371/journal.pone.0062672 Published: APR 23 2013



Abstract: Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy

(HRTEM). The dislocations at the Ge/Si interface were identified to be 90 degrees full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60 degrees dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60 degrees dislocation core was compared with those of the Peierls-Nabarro and

Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60 degrees dislocation core in a relaxed Ge film on a Si substrate.

Addresses: [Liu, Quanlong; Zhao, Chunwang; Li, Jijun; Xing, Yongming] Inner Mongolia Univ Technol,

Coll Sci, Hohhot, Peoples R China.

[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen, Peoples R China.

[Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing, Peoples

R China.

Reprint Address: Zhao, CW (reprint author), Inner Mongolia Univ Technol, Coll Sci, Hohhot, Peoples R

China.

E-mail Addresses: zhaocw@imut.edu.cn

ISSN: 1932-6203

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Record 310 of 495

Title: Strain-driven synthesis of self-catalyzed branched GaAs nanowires

Author(s): Zha, GW (Zha, Guowei); Li, MF (Li, Mifeng); Yu, Y (Yu, Ying); Wang, LJ (Wang, Lijuan); Xu, JX

(Xu, Jianxing); Shang, XJ (Shang, Xiangjun); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)


10.1063/1.4803028 Published: APR 22 2013



Abstract: We report the strain-driven synthesis of self-catalyzed branched GaAs nanowires (NWs).

Decoration of facets with branches is achieved as NWs elongate or with the insertion of InAs. The hemisphere tip shaped branches on the backbone implies identical Vapor-Liquid-Solid growth mechanism. We present the homogeneous gallium-droplets (GDs) nucleation on the GaAs {110} side facets in the form of GaAs quantum-rings, specifying the role of GDs in branching. Structural characterization revealed strain defects at the crotch between the backbones and branches of the NWs.

The evolution mechanism of self-catalyzed branched NWs is discussed and finally nano-trees with hyper-branches are demonstrated. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4803028]

Addresses: [Zha, Guowei; Li, Mifeng; Yu, Ying; Wang, Lijuan; Xu, Jianxing; Shang, Xiangjun; Ni, Haiqiao;

Niu, Zhichuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


Reprint Address: Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices



ISSN: 0003-6951

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Record 311 of 495

Title: Anomalous electron trajectory in topological insulators

Author(s): Shi, LK (Shi, Li-kun); Zhang, SC (Zhang, Shou-cheng); Chang, K (Chang, Kai)


10.1103/PhysRevB.87.161115 Published: APR 22 2013



Abstract: We present a general theory about electron orbital motions in topological insulators. An in-plane electric field drives spin-up and spin-down electrons bending to opposite directions, and skipping orbital motions, a counterpart of the integer quantum Hall effect, are formed near the boundary of the sample.

The accompanying Zitterbewegung can be found and controlled by tuning external electric fields.

Ultrafast flipping electron spin leads to a quantum side jump in the topological insulator, and a snake-orbit motion in two-dimensional electron gas with spin-orbit interactions. This feature provides a way to control electron orbital motion by manipulating electron spin. DOI: 10.1103/PhysRevB.87.161115

Addresses: [Shi, Li-kun; Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples

R China.

[Zhang, Shou-cheng] Stanford Univ, Dept Phys, Stanford, CA 94305 USA.

Reprint Address: Shi, LK (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing


E-mail Addresses: kchang@semi.ac.cn

ISSN: 1098-0121

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Record 312 of 495

Title: High power buried sampled grating distributed feedback quantum cascade lasers

Author(s): Zhang, JC (Zhang, J. C.); Liu, FQ (Liu, F. Q.); Yao, DY (Yao, D. Y.); Zhuo, N (Zhuo, N.); Wang,

LJ (Wang, L. J.); Liu, JQ (Liu, J. Q.); Wang, ZG (Wang, Z. G.)


10.1063/1.4801906 Published: APR 21 2013



Abstract: A novel index-coupled distributed feedback quantum cascade laser emitting at lambda similar to 4.8 mu m is demonstrated by a sampled grating. The coupling coefficient can be almost controlled arbitrarily according to the duty cycle of sampled grating. The additional supermodes caused by the sampled grating can be strongly suppressed by choosing a small sampling period, so that the supermodes are shifted apart from the gain curve. Single-mode emission without any significant disadvantages compared with uniform grating is achieved. Especially, this powerful approach presented here can be applied to achieve the performance with high power and low threshold simultaneously. (C)

2013 AIP Publishing LLC

Addresses: [Zhang, J. C.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.


Reprint Address: Zhang, JC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: fqliu@semi.ac.cn

ISSN: 0021-8979

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Record 313 of 495

Title: Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As

Author(s): Misuraca, J (Misuraca, Jennifer); Kim, JI (Kim, Joon-Il); Lu, J (Lu, Jun); Meng, KK (Meng,

Kangkang); Chen, L (Chen, Lin); Yu, XZ (Yu, Xuezhe); Zhao, JH (Zhao, Jianhua); Xiong, P (Xiong, Peng); von Molnar, S (von Molnar, Stephan)


10.1063/1.4802259 Published: APR 15 2013



Abstract: Electrical spin transport and accumulation have been measured in highly Si doped

Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities, and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition. (C) 2013 AIP Publishing LLC

[http://dx.doi.org/10.1063/1.4802259]

Addresses: [Misuraca, Jennifer; Kim, Joon-Il; Xiong, Peng; von Molnar, Stephan] Florida State Univ, Dept

Phys, Tallahassee, FL 32306 USA.

[Lu, Jun; Meng, Kangkang; Chen, Lin; Yu, Xuezhe; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond,


Reprint Address: Misuraca, J (reprint author), Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA.

E-mail Addresses: jm05h@my.fsu.edu

ISSN: 0003-6951

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Record 314 of 495

Title: Perpendicularly magnetized tau-MnAl (001) thin films epitaxied on GaAs

Author(s): Nie, SH (Nie, S. H.); Zhu, LJ (Zhu, L. J.); Lu, J (Lu, J.); Pan, D (Pan, D.); Wang, HL (Wang, H.

L.); Yu, XZ (Yu, X. Z.); Xiao, JX (Xiao, J. X.); Zhao, JH (Zhao, J. H.)


10.1063/1.4801932 Published: APR 15 2013



Abstract: Perpendicularly magnetized s-MnAl films have been epitaxied on GaAs (001) by

molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm(3), perpendicular magnetic anisotropy constant of 13.65 Merg/cm(3), and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets. (C) 2013 AIP Publishing LLC

[http://dx.doi.org/10.1063/1.4801932]

Addresses: [Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.] Chinese





ISSN: 0003-6951

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Record 315 of 495

Title: PEDOT/MWCNT composite film coated microelectrode arrays for neural interface improvement

Author(s): Chen, SY (Chen, Sanyuan); Pei, WH (Pei, Weihua); Gui, Q (Gui, Qiang); Tang, RY (Tang,

Rongyu); Chen, YF (Chen, Yuanfang); Zhao, SS (Zhao, Shanshan); Wang, H (Wang, Huan); Chen, HD

(Chen, Hongda)

Source: SENSORS AND ACTUATORS A-PHYSICAL Volume: 193 Pages: 141-148 DOI:

10.1016/j.sna.2013.01.033 Published: APR 15 2013



Abstract: High-performance electrode materials play a crucial role at the interface of implantable neural electrode. To realize bidirectional transduction between neural tissue and neural microelectrodes, the electrode material must satisfy the function of stimulating and recording. As the number and density of electrode increase, tiny electrodes with high performance are needed in future bioengineering study. In this study, a method of electrochemically co-deposited poly(3,4-ethylenedioxythiophene)/multi-walled carbon nanotube (PEDOT/MWCNT) onto microelectrode arrays with 8 channels was investigated. After modification, the impedance, charge transfer ability and frequency response characteristic were improved simultaneously. Compared with bare golden electrode, the coated microelectrodes with a surface area of 615 mu m(2) exhibited a particularly high safe charge injection limit of 7.74 mC/cm(2) and low impedance of 12 k Omega at 1 kHz. In vivo inferior colliculus implantation of rats revealed that the composite film coated microelectrodes showed higher signal to noise ratio recordings >15 dB compared to 6 dB SNR of bare gold microelectrodes. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Chen, Sanyuan; Pei, Weihua; Gui, Qiang; Tang, Rongyu; Chen, Yuanfang; Zhao, Shanshan;

Wang, Huan; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,





ISSN: 0924-4247

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Record 316 of 495

Title: Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing

Author(s): Kang, J (Kang, Jun); Tongay, S (Tongay, Sefaattin); Li, JB (Li, Jingbo); Wu, JQ (Wu, Junqiao)


10.1063/1.4799126 Published: APR 14 2013



Abstract: The stability and band bowing effects of two-dimensional transition metal dichalcogenide alloys

MX2(1-x)X'(2x) (M = Mo, W, and X, X' = S, Se, Te) are investigated by employing the cluster expansion method and the special quasi-random structure approach. It is shown that for (S, Se) alloys, there exist stable ordered alloy structures with concentration x equal to 1/3, 1/2, and 2/3, which can be explained by the small lattice mismatch between the constituents and a large additional charge exchange, while no ordered configuration exists for (Se, Te) and (S, Te) alloys at 0K. The calculated phase diagrams indicate

that complete miscibility in the alloys can be achieved at moderate temperatures. The bowing in lattice constant for the alloys is quite small, while the bowing in band gap, and more so in band edge positions, is much more significant. By decomposing the formation of alloy into multiple steps, it is found that the band bowing is the joint effect of volume deformation, chemical difference, and a low-dimensionality enhanced structure relaxation. The direct band gaps in these alloys continuously tunable from 1.8 eV to

1.0 eV, along with the moderate miscibility temperatures, make them good candidates for two-dimensional optoelectronics.

[http://dx.doi.org/10.1063/1.4799126]

(C) 2013 American Institute of Physics.

Addresses: [Kang, Jun; Tongay, Sefaattin; Li, Jingbo; Wu, Junqiao] Chinese Acad Sci, Inst Semicond,


[Kang, Jun; Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA

94720 USA.


Reprint Address: Kang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: jbli@semi.ac.cn; wuj@berkeley.edu

ISSN: 0021-8979

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Record 317 of 495

Title: Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth

Author(s): Wen, JJ (Wen, Juanjuan); Liu, Z (Liu, Zhi); Li, LL (Li, Leliang); Li, C (Li, Chong); Xue, CL (Xue,

Chunlai); Zuo, YH (Zuo, Yuhua); Li, CB (Li, Chuanbo); Wang, QM (Wang, Qiming); Cheng, BW (Cheng,

Buwen)


10.1063/1.4801805 Published: APR 14 2013



Abstract: Room temperature photoluminescence (PL) was observed along 50 mu m long Ge strips on insulator on bulk Si substrates fabricated by rapid melt growth. The PL peaks evidently exhibited a redshift from the origin to the end of the Ge strip because of the shrinkage of the direct bandgap of Ge.

Moreover, PL intensities increased along the direction of lateral epitaxial growth primarily because of the decrease in the energy difference between the direct and indirect gaps of Ge. The change in the Ge band structure, which facilitated changes in PL peaks and intensities, was found to have resulted from the variation of tensile strain ratios and Si fractions along Ge strips. Furthermore, the PL intensity at the end of the strip was one magnitude higher than that of bulk Ge, which indicates the high quality of

Ge-on-insulator structures. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801805]

Addresses: [Wen, Juanjuan; Liu, Zhi; Li, Leliang; Li, Chong; Xue, Chunlai; Zuo, Yuhua; Li, Chuanbo;

Wang, Qiming; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,


Reprint Address: Wen, JJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 0021-8979

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Record 318 of 495

Title: Multi-channel DFB laser array fabricated by SAG with optimized epitaxy conditions

Author(s): Zhang, C (Zhang, Can); Liang, S (Liang, Song); Ma, L (Ma, Li); Han, LS (Han, Liangshun); Zhu,

HL (Zhu, Hongliang)


10.3788/COL201311.041401 Published: APR 10 2013



Abstract: Selective area growth (SAG) is performed to fabricate monolithically integrated distributed feedback (DFB) laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser array with an average channel

spacing of 1.47 nm is demonstrated by a conventional holographic method with constant-pitch grating.

The threshold current from 14 to 18 mA and over 35-dB side mode suppression ratio (SMSR) are obtained for all DFB lasers in the array.

Addresses: [Zhang, Can; Liang, Song; Ma, Li; Han, Liangshun; Zhu, Hongliang] Chinese Acad Sci, Inst

Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.

Reprint Address: Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat,


E-mail Addresses: liangsong@semi.ac.cn

ISSN: 1671-7694

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Record 319 of 495

Title: Wavelength evolution of long-period fiber gratings in a water environment

Author(s): Zhao, Q (Zhao, Qiang); Qu, Y (Qu, Yi); Wang, YJ (Wang, Yong-Jie); Li, F (Li, Fang)


Published: APR 10 2013



Abstract: In a water environment, wavelength evolution behavior of long-period fiber gratings (LPFGs) written in H-2-loaded fibers after annealing is studied. The phenomena that wavelength shifts in the longer wavelength direction and then in the shorter wavelength direction is observed. A shift of the grating resonance peak (LP05) of as much as 2.5 nm is found. A water-mediated model that water molecules induce the second diffusion of the remaining H-2 in the fiber and a diffusion-reaction mechanism that water molecules penetrate into fiber internal structures are proposed and are combined to explain the wavelength evolution process. Both the calculated balance point time according to the model, and the qualitative analysis according to the mechanism, correspond well with the experimental results. This research indicates that wavelength variation has to be considered or prevented when

H-2-loaded LPFGs are used in a water environment. (C) 2013 Optical Society of America

Addresses: [Zhao, Qiang; Qu, Yi] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond

Lasers, Changchun 130022, Jilin, Peoples R China.

[Zhao, Qiang; Wang, Yong-Jie; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing


Reprint Address: Zhao, Q (reprint author), Changchun Univ Sci & Technol, Natl Key Lab High Power


E-mail Addresses: zqhero9494@163.com; quyi@cust.edu.cn

ISSN: 1559-128X

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Record 320 of 495

Title: Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for high-performance advanced lithium-ion batteries

Author(s): Liu, B (Liu, Bin); Wang, XF (Wang, Xianfu); Chen, HT (Chen, Haitian); Wang, ZR (Wang,

Zhuoran); Chen, D (Chen, Di); Cheng, YB (Cheng, Yi-Bing); Zhou, CW (Zhou, Chongwu); Shen, GZ

(Shen, Guozhen)





Abstract: Toward the increasing demands of portable energy storage and electric vehicle applications, the widely used graphite anodes with significant drawbacks become more and more unsuitable. Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes fabricated via a facile method. Further, complete lithium-ion batteries based on Si and commercial LiCoO2 materials were assembled to investigate their corresponding across-the-aboard performances, demonstrating their enhanced specific capacity (2950 mAh g(-1) at 0.2 C), good repeatability/ rate capability (even >900 mAh g(-1) at high rate of 5 C), long cycling life, and excellent stability in various external conditions (curvature, temperature, and humidity). Above results light the way to principally replacing graphite anodes with silicon-based electrodes which was confirmed to have better comprehensive performances.

Addresses: [Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Chen, Di; Shen, Guozhen] Huazhong Univ Sci &


[Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Chen, Di; Shen, Guozhen] Huazhong Univ Sci & Technol, Coll

Opt & Elect Informat, Wuhan 430074, Peoples R China.

[Cheng, Yi-Bing] Monash Univ, Fac Engn, Clayton, Vic 3800, Australia.

[Chen, Haitian; Zhou, Chongwu] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA.



Reprint Address: Zhou, CW (reprint author), Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089

USA.

E-mail Addresses: chongwuz@usc.edu; gzshen@semi.ac.cn

ISSN: 2045-2322

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Record 321 of 495

Title: High-responsivity GeSn short-wave infrared p-i-n photodetectors

Author(s): Zhang, DL (Zhang, Dongliang); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Su, SJ

(Su, Shaojian); Liu, Z (Liu, Zhi); Zhang, X (Zhang, Xu); Zhang, GZ (Zhang, Guangze); Li, CB (Li,

Chuanbo); Wang, QM (Wang, Qiming)


10.1063/1.4801957 Published: APR 8 2013



Abstract: Surface-illuminated GeSn p-i-n photodetectors (PDs) with Ge0.964Sn0.036 active layer on Ge substrate were fabricated. Photodetection up to 1.95 mu m is achieved with a responsivity of 0.13 A/W.

High responsivities of 0.56 and 0.71 A/W were achieved under a reverse bias voltage of 3V at 1640 and

1790 nm, respectively. A low dark current of 1.08 mu A was obtained at a reverse bias of 1V with a diameter of 150 mu m, which corresponds to a current density of 6.1mA/cm(2). This value is among the lowest dark current densities reported among GeSn PDs. (C) 2013 AIP Publishing LLC

Addresses: [Zhang, Dongliang; Xue, Chunlai; Cheng, Buwen; Liu, Zhi; Zhang, Xu; Zhang, Guangze; Li,

Chuanbo; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Fujian Province, Peoples R

China.

Reprint Address: Xue, CL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: clxue@semi.ac.cn

ISSN: 0003-6951

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Record 322 of 495

Title: Lateral cavity photonic crystal surface emitting laser based on commercial epitaxial wafer

Author(s): Wang, YF (Wang, Yufei); Qu, HW (Qu, Hongwei); Zhou, WJ (Zhou, Wenjun); Qi, AY (Qi, Aiyi);

Zhang, JX (Zhang, Jianxin); Liu, L (Liu, Lei); Zheng, WH (Zheng, Wanhua)

Source: OPTICS EXPRESS Volume: 21 Issue: 7 Pages: 8844-8855 DOI: 10.1364/OE.21.008844




Abstract: A lateral cavity photonic crystal surface emitting laser (LC-PCSEL) with airholes of cone-like shape etched near to the active layer is fabricated. It employs only a simple commercial epitaxial wafer without DBR and needs no wafer bonding technique. Surface emitting lasing action at 1575 nm with power of 1.8 mW is observed at room temperature, providing potential values for mass production of electrically driven PCSELs with low cost. Additionally, Fano resonance is utilized to analyze aperture equivalence of PC, and energy distribution in simplified laser structure is simulated to show oscillation and transmission characteristics of laser. (c) 2013 Optical Society of America

Addresses: [Wang, Yufei; Qu, Hongwei; Zhou, Wenjun; Qi, Aiyi; Zhang, Jianxin; Liu, Lei; Zheng, Wanhua]


Reprint Address: Wang, YF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1094-4087

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Record 323 of 495

Title: Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

Author(s): Sahin, H (Sahin, H.); Tongay, S (Tongay, S.); Horzum, S (Horzum, S.); Fan, W (Fan, W.); Zhou,

J (Zhou, J.); Li, J (Li, J.); Wu, J (Wu, J.); Peeters, FM (Peeters, F. M.)


10.1103/PhysRevB.87.165409 Published: APR 5 2013



Abstract: Typical Raman spectra of transition-metal dichalcogenides (TMDs) display two prominent peaks, E-2g and A(1g), that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak in contrast to other TMDs. As the dimensionality is lowered, the observed peak splits in two. In contrast, our ab initio calculations predict that the degeneracy is retained even for WSe2 monolayers. Interestingly, for minuscule biaxial strain, the degeneracy is preserved, but once the crystal symmetry is broken by a small uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained WSe2 shows a good match to the measured Raman spectrum, which suggests that uniaxial strain exists in WSe2 flakes, possibly induced during the sample preparation and/or as a result of the interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an indirect-to-direct band-gap transition from bulk to monolayers, which is ubiquitous for semiconducting TMDs. These results not only allow us to understand the vibrational and electronic properties of WSe2, but also point to effects of the interaction between the monolayer TMDs and the substrate on the vibrational and electronic properties. DOI:

10.1103/PhysRevB.87.165409

Addresses: [Sahin, H.; Horzum, S.; Peeters, F. M.] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium.

[Tongay, S.; Fan, W.; Zhou, J.; Wu, J.] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720

USA.

[Horzum, S.] Ankara Univ, Dept Engn Phys, Fac Engn, TR-06100 Ankara, Turkey.

[Li, J.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wu, J.] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Sahin, H (reprint author), Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020

Antwerp, Belgium.

E-mail Addresses: hasan.sahin@ua.ac.be; tongay@berkeley.edu

ISSN: 1098-0121

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Record 324 of 495

Title: Optical anisotropy and blue-shift phenomenon in tetragonal BiFeO3

Author(s): Dong, HF (Dong, Huafeng); Liu, HF (Liu, Hongfei); Wang, SY (Wang, Shanying)


135102 DOI: 10.1088/0022-3727/46/13/135102 Published: APR 3 2013



Abstract: We study the uniaxial optical anisotropy of tetragonal BiFeO3 using first-principles density-functional theory and the Heyd-Scuseria-Ernzerhof hybrid functional in the near infrared to near ultraviolet range, and compare the results with related experiment and theory. It is found that the dielectric function is overall blue shifted compared with that of rhombohedral BiFeO3, and the charge transfer excitations are similar to 0.3 eV higher than those of the rhombohedral counterpart, which is caused by the symmetry breaking of FeO6 octahedral. Furthermore, it is a negative uniaxial crystal and shows significant birefringence.

Addresses: [Dong, Huafeng; Wang, Shanying] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R

China.

[Dong, Huafeng; Liu, Hongfei] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &



E-mail Addresses: hfdong@semi.ac.cn; sywang@mail.tsinghua.edu.cn

ISSN: 0022-3727

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Record 325 of 495

Title: Influence of growth conditions on the lateral grain size of AIN film grown by metal-organic chemical vapor deposition

Author(s): Wu, LL (Wu Liang-Liang); Zhao, DG (Zhao De-Gang); Li, L (Li Liang); Le, LC (Le Ling-Cong);

Chen, P (Chen Ping); Liu, ZS (Liu Zong-Shun); Jiang, DS (Jiang De-Sheng)


10.7498/aps.62.086102 Published: APR 2013



Abstract: In this paper, we investigate the effect of growth conditions on the quality of AN film grown by metal-organic chemical vapor deposition. We test and analyze the influence of different growth conditions, such as nitridation time, growth time of AN buffer layer and the flow rate of carrier gas, on the lateral grain size of AN film. It is found that the redution of nitridation time, the increase of growth time of AN buffer layer, and the reduction of the flow rate of carrier gas can enhance the lateral growth of AN film and coalescence of islands and increase the lateral grain size of AN film. So the quality of AN film is improved.

Addresses: [Wu Liang-Liang; Zhao De-Gang; Li Liang; Le Ling-Cong; Chen Ping; Liu Zong-Shun; Jiang

De-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.




ISSN: 1000-3290

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Record 326 of 495

Title: A Chirped Subwavelength Grating With Both Reflection and Transmission Focusing

Author(s): Lv, XM (Lv, Xiaomin); Qiu, WB (Qiu, Weibin); Wang, JX (Wang, Jia-Xian); Ma, YH (Ma, Yuhui);

Zhao, J (Zhao, Jing); Li, MK (Li, Mengke); Yu, HY (Yu, Hongyan); Pan, JQ (Pan, Jiaoqing)


10.1109/JPHOT.2013.2252333 Published: APR 2013



Abstract: A planar lens composed of a chirped subwavelength grating (CSG) structure with high numerical aperture (NA) was designed and analyzed in this paper. The reflectivity, transmission, and phase were calibrated as a function of the grating dimension using rigorous coupled wave analysis, while the focusing properties were numerically simulated by finite-element method. The designed CSG focused the reflected and transmitted waves that have approximately the same power ratios simultaneously. Numerical aperture values of the planar lens as high as 0.91 and 0.92 were obtained for normal incidence of TM and TE polarization light, respectively.

Addresses: [Lv, Xiaomin; Qiu, Weibin; Wang, Jia-Xian; Ma, Yuhui; Zhao, Jing] Huaqiao Univ, Coll

Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Li, Mengke; Yu, Hongyan; Pan, Jiaoqing] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

Reprint Address: Qiu, WB (reprint author), Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021,

Peoples R China.

E-mail Addresses: wbqiu@hqu.edu.cn; wangjx@hqu.edu.cn

ISSN: 1943-0655

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Record 327 of 495

Title: Photonic Generation of Chirp-Free Phase-Coded Microwave With Accurate pi Phase Shift and

Large Continuous Operating Bandwidth

Author(s): Wang, H (Wang, Hui); Zheng, JY (Zheng, Jianyu); Wang, LX (Wang, Lixian); Liu, JG (Liu,

Jianguo); Xie, L (Xie, Liang); Zhu, NH (Zhu, Ninghua)


10.1109/JPHOT.2013.2248706 Published: APR 2013



Abstract: This paper presents a novel approach to generate a binary phase-coded microwave signal with accurate pi phase shift and large continuous operating bandwidth. In the system, the phase-coding modulation with an accurate pi phase shift has been realized by the joint use of two cascaded polarization modulators (PolMs). The generation of phase-coded microwave signals at 10 GHz, 18 GHz, and 28 GHz has been experimentally demonstrated, which verifies the proposed technique positively.

Since there is no use of any optical filters and fiber Bragg gratings (FBGs), this system is rather simple and free from the optical bandwidth limitation problem with operating in a continuous microwave bandwidth as large as limited only by the PolMs (from dc to 40 GHz).

Addresses: [Wang, Hui; Zheng, Jianyu; Wang, Lixian; Liu, Jianguo; Xie, Liang; Zhu, Ninghua] Chinese

Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Xie, L (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst


E-mail Addresses: xiel@semi.ac.cn

ISSN: 1943-0655

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Record 328 of 495

Title: Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

Author(s): Li, Z (Li, Zhi); Kang, JJ (Kang, Junjie); Liu, ZQ (Liu, Zhiqiang); Du, CX (Du, Chengxiao); Lee, X

(Lee, Xiao); Li, X (Li, Xiao); Wang, LC (Wang, Liancheng); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu, Hongwei);

Wang, GH (Wang, Guohong)


Published: APR 2013



Abstract: Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of

AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/p-GaN interface. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a

Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4803647]

Addresses: [Li, Zhi; Kang, Junjie; Liu, Zhiqiang; Du, Chengxiao; Wang, Liancheng; Yi, Xiaoyan; Wang,

Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083,

Peoples R China.

[Lee, Xiao; Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R

China.

[Lee, Xiao; Zhu, Hongwei] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China.

Reprint Address: Li, Z (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res

& Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: lzq@semi.ac.cn; hongweizhu@tsinghua.edu.cn

ISSN: 2158-3226

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Record 329 of 495

Title: X-ray probe of GaN thin films grown on InGaN compliant substrates

Author(s): Xu, XQ (Xu, Xiaoqing); Li, Y (Li, Yang); Liu, JM (Liu, Jianming); Wei, HY (Wei, Hongyuan); Liu,

XL (Liu, Xianglin); Yang, SY (Yang, Shaoyan); Wang, ZG (Wang, Zhanguo); Wang, HH (Wang, Huanhua)


10.1063/1.4799279 Published: APR 1 2013



Abstract: GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and

X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers.

Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799279]

Addresses: [Xu, Xiaoqing; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo]

Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Li, Yang] Univ Sci & Technol Beijing, Dept Mat Sci, Beijing 100083, Peoples R China.

[Wang, Huanhua] Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing


Reprint Address: Xu, XQ (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond,


E-mail Addresses: xxq@semi.ac.cn; xlliu@semi.ac.cn; sh-yyang@semi.ac.cn

ISSN: 0003-6951

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Record 330 of 495

Title: Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy

Author(s): Zhu, LJ (Zhu, L. J.); Pan, D (Pan, D.); Nie, SH (Nie, S. H.); Lu, J (Lu, J.); Zhao, JH (Zhao, J.

H.)


10.1063/1.4799344 Published: APR 1 2013



Abstract: We report wide-range composition and annealing effects on magnetic properties of MnxGa films grown on GaAs (001) by molecular-beam epitaxy. We obtained single-crystalline MnxGa films in a surprisingly wide composition range from x = 0.76 to 2.6. We show that the magnetism could be effectively tailored by adjusting composition and annealing. Especially, when 0.76 <= x <= 1.75, MnxGa films simultaneously show magnetization from 130 to 450 emu/cc, perpendicular anisotropy from 8.6 to

21 Merg/cc, intrinsic coercivity from 4.38 to 20.1 kOe, normal coercivity to 3.6 kOe, energy product up to

3.4 MGOe, and thermal-stability up to at least 350 degrees C in contact with GaAs. (C) 2013 American

Institute of Physics. [http://dx.doi.org/10.1063/1.4799344]

Addresses: [Zhu, L. J.; Pan, D.; Nie, S. H.; Lu, J.; Zhao, J. H.] Chinese Acad Sci, State Key Lab





ISSN: 0003-6951

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Record 331 of 495

Title: Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages

Author(s): Du, CX (Du, Chengxiao); Geng, C (Geng, Chong); Zheng, HY (Zheng, Haiyang); Wei, TB (Wei,

Tongbo); Chen, Y (Chen, Yu); Zhang, YY (Zhang, Yiyun); Wu, K (Wu, Kui); Yan, QF (Yan, Qingfeng);

Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 4 Article Number:

040207 DOI: 10.7567/JJAP.52.040207 Published: APR 2013



Abstract: Unencapsulated GaN-based light-emitting diodes (LEDs) with two-dimensional (2D) hexagonal

closely-packed silicon oxide nanobowls photonic crystal (PhC) on the indium tin oxide (ITO) transparent conductive layer were fabricated by using polystyrene spheres and sol-gel process. Compared to conventional LEDs with planar ITO layers, the light output power of 600-nm-lattice PhC LEDs was improved by 25.6% at an injection current of 20 mA. Furthermore, electrical performance of the PhC

LEDs was damage-free via this chemical technique. (C) 2013 The Japan Society of Applied Physics

Addresses: [Du, Chengxiao; Zheng, Haiyang; Wei, Tongbo; Chen, Yu; Zhang, Yiyun; Wu, Kui; Wang,

Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing


[Geng, Chong; Yan, Qingfeng] Tsinghua Univ, Dept Chem, State Key Lab New Ceram & Fine Proc,


[Chen, Yu] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.

Reprint Address: Du, CX (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


E-mail Addresses: tbwei@semi.ac.cn; chenyu@semi.ac.cn

ISSN: 0021-4922

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Record 332 of 495

Title: Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate

Author(s): Liu, Z (Liu Zhi); Li, YM (Li Ya-Ming); Xue, CL (Xue Chun-Lai); Cheng, BW (Cheng Bu-Wen);

Wang, QM (Wang Qi-Ming)


10.7498/aps.62.076108 Published: APR 2013



Abstract: Four-bilayer Ge quantum dots (QDs) with Si spacers were epitaxially grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. In two samples, Ge QDs were in situ doped with phosphorus or boron, separately. Surface morphology and room temperature photoluminescence (PL) of multilayer Ge/Si QDs wer studied. Compared with the undoped Ge QDs, phosphorus-doping did not change the morphology of Ge QDs, enhanced PL wer observed from the phosphorus-doped Ge QDs. But reduction of Ge QDs density and PL intensity wer observed from the boron-doped Ge QDs. The intensity enhancement of PL could be attributed to the sufficient supply of electrons in Ge QDs for radiative recombination.

Addresses: [Liu Zhi; Li Ya-Ming; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad Sci, Inst





ISSN: 1000-3290

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Record 333 of 495

Title: The generation of MHz isolated XUV attosecond pulses by plasmonic enhancement in a tailored symmetric Ag cross nanoantenna with a few-cycle laser

Author(s): Yang, YY (Yang, Ying-Ying); Li, QG (Li, Qian-Guang); Yu, HJ (Yu, Hai-Juan); Lin, XC (Lin,

Xue-Chun)


10.1088/1054-660X/23/4/045301 Published: APR 2013



Abstract: Within a few-cycle laser, the generation of MHz isolated extreme ultraviolet (XUV) attosecond pulses via nanoplasmonic field enhancement in silver nanostructures is theoretically investigated.

Numerical techniques are employed to optimize nanoantennas and attain plasmonic field enhancement factors up to 270. In a volume of 15 x 15 x 30 nm(-3) in the nanoantenna, the intensity could be enhanced to 10(14) W cm(-2) for high harmonic generation (HHG). Optimal conditions for the production of MHz isolated attosecond pulses of 140 attosecond duration via HHG have been identified. These findings open up the possibility for the development of a compact source of ultrashort XUV pulses with MHz

repetition rates. Moreover, asymmetric cross HHG is proposed to control the polarizations, select the wavelengths by varying the ratio of silver nanoantennas and generate XUV pulses in both polarized directions.

Addresses: [Yang, Ying-Ying; Yu, Hai-Juan; Lin, Xue-Chun] Chinese Acad Sci, Inst Semicond, Lab Solid

State Laser Sources, Beijing 100083, Peoples R China.

[Li, Qian-Guang] Hubei Engn Univ, Dept Phys, Xiaogan 432000, Peoples R China.

Reprint Address: Yang, YY (reprint author), Chinese Acad Sci, Inst Semicond, Lab Solid State Laser


E-mail Addresses: yangyy@semi.ac.cn; xclin@semi.ac.cn

ISSN: 1054-660X

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Record 334 of 495

Title: Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with

Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

Author(s): Liu, XF (Liu, Xingfang); Sun, GS (Sun, Guosheng); Liu, B (Liu, Bin); Yan, GG (Yan, Guoguo);

Guan, M (Guan, Min); Zhang, Y (Zhang, Yang); Zhang, F (Zhang, Feng); Chen, Y (Chen, Yu); Dong, L

(Dong, Lin); Zheng, L (Zheng, Liu); Liu, SB (Liu, Shengbei); Tian, LX (Tian, Lixin); Wang, L (Wang, Lei);

Zhao, WS (Zhao, Wanshun); Zeng, YP (Zeng, Yiping)

Source: MATERIALS Volume: 6 Issue: 4 Pages: 1543-1553 DOI: 10.3390/ma6041543

Published: APR 2013



Abstract: We report a new method for growing hexagonal columnar nanograin structured silicon carbide

(SiC) thin films on silicon substrates by using graphene-graphitic carbon nanoflakes (GGNs) templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM). Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200-400 nm are synthesized on the GGNs, which form compact SiC thin films.

Addresses: [Liu, Xingfang; Sun, Guosheng; Liu, Bin; Yan, Guoguo; Guan, Min; Zhang, Yang; Zhang,

Feng; Dong, Lin; Zheng, Liu; Liu, Shengbei; Tian, Lixin; Wang, Lei; Zhao, Wanshun; Zeng, Yiping]


[Chen, Yu; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr,


Reprint Address: Liu, XF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: liuxf@mail.semi.ac.cn; gshsun@red.semi.ac.cn; liubin2010@semi.ac.cn; ggyan@semi.ac.cn; guanmin@red.semi.ac.cn; zhang_yang@mail.semi.ac.cn; fzhang@semi.ac.cn; chenyu@semi.ac.cn; donglin09@semi.ac.cn; liuero@semi.ac.cn; liushengbei@semi.ac.cn; tianlixin@semi.ac.cn; wangl@semi.ac.cn; zwshuke@semi.ac.cn; ypzeng@red.semi.ac.cn

ISSN: 1996-1944

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Record 335 of 495

Title: Temperature-dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

Author(s): Zeng, JP (Zeng, Jianping); Li, W (Li, Wei); Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi);

Cong, PP (Cong, Peipei); Li, JM (Li, Jinmin); Wang, WY (Wang, Weiying); Jin, P (Jin, Peng); Wang, ZG

(Wang, Zhanguo)

Source: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Volume: 7 Issue: 4 Pages:

297-300 DOI: 10.1002/pssr.201307004 Published: APR 2013



Abstract: Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP-MOCVD have been studied by means of deep ultraviolet time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV-AlGaN/AlGaN MQWs PL emission (E-p) exhibits a

similarly anti-S-shaped behavior (blueshift - accelerated redshift - decelerated redshift): E-p increases in the temperature range of 5.9-20 K and decreases for 20-300 K, involving an accelerated redshift for

20-150 K and an opposite decelerated redshift for 150-300 K with temperature increase. Especially at high temperature as 300 K, the slope of the E-p redshift tends towards zero. This temperature-induced

PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (C) 2013

WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Addresses: [Zeng, Jianping; Yan, Jianchang; Wang, Junxi; Cong, Peipei; Li, Jinmin] Chinese Acad Sci,

Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.

[Li, Wei; Wang, Weiying; Jin, Peng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab


Reprint Address: Zeng, JP (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D


E-mail Addresses: zengjp@semi.ac.cn

ISSN: 1862-6254

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Record 336 of 495

Title: Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

Author(s): Cao, ZF (Cao Zhi-Fang); Lin, ZJ (Lin Zhao-Jun); Lu, YJ (Lu Yuan-Jie); Luan, CB (Luan

Chong-Biao); Wang, ZG (Wang Zhan-Guo)


10.1088/1674-1056/22/4/047102 Published: APR 2013



Abstract: Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain

AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate-drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.

Addresses: [Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao] Shandong Univ, Sch Phys,


[Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

Reprint Address: Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.

E-mail Addresses: linzj@sdu.edu.cn

ISSN: 1674-1056

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Record 337 of 495

Title: Influence of strain and electric field on the properties of silicane

Author(s): Cheng, G (Cheng Gang); Liu, PF (Liu Peng-Fei); Li, ZT (Li Zi-Tao)


10.1088/1674-1056/22/4/046201 Published: APR 2013



Abstract: We investigate the influence of strain and electric field on the properties of a silicane sheet.

Some elastic parameters of silicane, such as an in-plane stiffness of 52.55 N/m and a Poisson's ratio of

0.24, are obtained by calculating the strain energy. Compared with silicene, silicane is softer because of its relatively weaker Si-Si bonds. The band structure of silicane is tunable by a uniform tensile strain, with the increase of which the band gap decreases monotonously. Moreover, silicane undergoes an indirect-direct gap transition under a small strain, and a semiconductor-metal transition under a large strain. The electric field can change the Si-H bond length of silicane significantly. When a strong field is

applied, the H atom at the high potential side becomes desorbed, while the H atom at the low potential side keeps bonded. So an external electric field can help to produce single-side hydrogenated silicene from silicane. We believe this study will be helpful for the application of silicane in the future.

Addresses: [Cheng Gang; Liu Peng-Fei; Li Zi-Tao] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Cheng, G (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: Chenggang@semi.ac.cn

ISSN: 1674-1056

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Record 338 of 495

Title: InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

Author(s): Li, XK (Li Xin-Kun); Jin, P (Jin Peng); Liang, DC (Liang De-Chun); Wu, J (Wu Ju); Wang, ZG

(Wang Zhan-Guo)


10.1088/1674-1056/22/4/048102 Published: APR 2013



Abstract: With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970 nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800 mA, an output power of 18.5 mW, and the single Gaussian-like emission spectrum centered at 972 nm with a full width at half maximum of

18 nm are obtained.


Peoples R China.






ISSN: 1674-1056

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Record 339 of 495

Title: Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector

Author(s): Yuan, SP (Yuan Si-Peng); Shen, C (Shen Chao); Zheng, HZ (Zheng Hou-Zhi); Liu, Q (Liu Qi);

Wang, LG (Wang Li-Guo); Meng, KK (Meng Kang-Kang); Zhao, JH (Zhao Jian-Hua)


10.1088/1674-1056/22/4/047202 Published: APR 2013



Abstract: Electric luminescence and its circular polarization in a Co2MnAl injector-based light emitting diode (LED) has been detected at the transition of e-A(C)(0), where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p(+)-GaAs layer. The large volume of the p(+)-GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-A(C)(0) emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p(+)-GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.

Addresses: [Yuan Si-Peng; Shen Chao; Zheng Hou-Zhi; Liu Qi; Wang Li-Guo; Meng Kang-Kang; Zhao

Jian-Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,

Peoples R China.

Reprint Address: Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: hzzheng@red.semi.ac.cn

ISSN: 1674-1056

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Record 340 of 495

Title: A High Sensitivity Index Sensor Based on Magnetic Plasmon Resonance in Metallic Grating with

Very Narrow Slits

Author(s): Xu, BZ (Xu Bin-Zong); Liu, JT (Liu Jie-Tao); Hu, HF (Hu Hai-Feng); Wang, LN (Wang Li-Na);

Wei, X (Wei Xin); Song, GF (Song Guo-Feng)


10.1088/0256-307X/30/4/040702 Published: APR 2013



Abstract: The index sensing characteristics of metallic deep gratings are numerically investigated. The concept is based on magnetic polariton resonance, which is very sensitive to changes in the refractive index of the surrounding medium. We numerically demonstrate that the sensitivity and figure of merit of the magnetic plasmon mode can be tailored by adjusting the depth and width of the slits. The highest sensitivity of 1542nm per refractive index unit with a good figure of merit of 12.3 is obtained. The angle-insensitive property with a high signal intensity of this system could be useful for the future design and application of wide-range sensitive plasmonic index sensors.

Addresses: [Xu Bin-Zong; Liu Jie-Tao; Hu Hai-Feng; Wang Li-Na; Wei Xin; Song Guo-Feng] Chinese

Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.


China.

E-mail Addresses: sgf@red.semi.ac.cn

ISSN: 0256-307X

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Record 341 of 495

Title: High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area

Transmission Electro-Absorption Modulators

Author(s): Yang, XH (Yang Xiao-Hong); Liu, SQ (Liu Shao-Qing); Ni, HQ (Ni Hai-Qiao); Li, MF (Li

Mi-Feng); Li, L (Li Liang); Han, Q (Han Qin); Niu, ZC (Niu Zhi-Chuan)


10.1088/0256-307X/30/4/046102 Published: APR 2013



Abstract: The good quality of 200 pairs of highly strained In0.24GaAs/GaAs multi-quantum-well (MQW) structure is demonstrated by the x-ray diffraction and photoluminescence curves. Large-area modulators based on the pseudomorphic In0.24GaAs/GaAs MQW are designed and fabricated successfully, where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm. The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.

Addresses: [Yang Xiao-Hong; Liu Shao-Qing; Li Liang; Han Qin] Chinese Acad Sci, Inst Semicond, State


[Ni Hai-Qiao; Li Mi-Feng; Niu Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


Reprint Address: Yang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xhyang@red.semi.ac.cn

ISSN: 0256-307X

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Record 342 of 495

Title: Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire

Author(s): Yu, Y (Yu, Ying); Li, MF (Li, Mi-Feng); He, JF (He, Ji-Fang); He, YM (He, Yu-Ming); Wei, YJ

(Wei, Yu-Jia); He, Y (He, Yu); Zha, GW (Zha, Guo-Wei); Shang, XJ (Shang, Xiang-Jun); Wang, J (Wang,

Juan); Wang, LJ (Wang, Li-Juan); Wang, GW (Wang, Guo-Wei); Ni, HQ (Ni, Hai-Qiao); Lu, CY (Lu,

Chao-Yang); Niu, ZC (Niu, Zhi-Chuan)

Source: NANO LETTERS Volume: 13 Issue: 4 Pages: 1399-1404 DOI: 10.1021/nl304157d

Published: APR 2013



Abstract: We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is similar to 20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 mu eV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.

Addresses: [Yu, Ying; Li, Mi-Feng; He, Ji-Fang; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Juan; Wang,

Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab


[He, Yu-Ming; Wei, Yu-Jia; He, Yu; Lu, Chao-Yang] Univ Sci & Technol China, Hefei Natl Lab Phys Sci

Microscale, Hefei 230026, Anhui, Peoples R China.

[He, Yu-Ming; Wei, Yu-Jia; He, Yu; Lu, Chao-Yang] Univ Sci & Technol China, Dept Modern Phys, Hefei

230026, Anhui, Peoples R China.

Reprint Address: Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices



ISSN: 1530-6984

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Record 343 of 495

Title: All Zinc-Blende GaAs/(Ga,Mn)As Core-Shell Nanowires with Ferromagnetic Ordering

Author(s): Yu, XZ (Yu, Xuezhe); Wang, HL (Wang, Hailong); Pan, D (Pan, Dong); Zhao, JH (Zhao,

Jianhua); Misuraca, J (Misuraca, Jennifer); von Molnar, S (von Molnar, Stephan); Xiong, P (Xiong, Peng)

Source: NANO LETTERS Volume: 13 Issue: 4 Pages: 1572-1577 DOI: 10.1021/nl304740k

Published: APR 2013



Abstract: Combining self-catalyzed vapor liquid solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB)

GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitazially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 degrees C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.

Addresses: [Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond,


[Misuraca, Jennifer; von Molnar, Stephan; Xiong, Peng] Florida State Univ, Dept Phys, Tallahassee, FL

32306 USA.




ISSN: 1530-6984

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Record 344 of 495

Title: Modulation of Thermal Conductivity in Kinked Silicon Nanowires: Phonon Interchanging and

Pinching Effects

Author(s): Jiang, JW (Jiang, Jin-Wu); Yang, N (Yang, Nuo); Wang, BS (Wang, Bing-Shen); Rabczuk, T

(Rabczuk, Timon)

Source: NANO LETTERS Volume: 13 Issue: 4 Pages: 1670-1674 DOI: 10.1021/nl400127q

Published: APR 2013



Abstract: We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity:

(1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

Addresses: [Jiang, Jin-Wu; Rabczuk, Timon] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar,

Germany.

[Yang, Nuo] Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092,

Peoples R China.

[Wang, Bing-Shen] Chinese Acad Sci, State Key Lab Semicond Superlattice & Microstruct, Beijing


[Wang, Bing-Shen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Jiang, JW (reprint author), Bauhaus Univ Weimar, Inst Struct Mech, Marienstr 15,

D-99423 Weimar, Germany.

E-mail Addresses: jinwu.jiang@uni-weimar.de; imyangnuo@tongji.edu.cn

ISSN: 1530-6984

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Record 345 of 495

Title: Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell

Author(s): Li, ZD (Li, Zhidong); Xiao, HL (Xiao, Hongling); Wang, XL (Wang, Xiaoliang); Wang, CM (Wang,

Cuimei); Deng, QW (Deng, Qingwen); Jing, L (Jing, Liang); Ding, JQ (Ding, Jieqin); Hou, X (Hou, Xun)

Source: PHYSICA B-CONDENSED MATTER Volume: 414 Pages: 110-114 DOI:

10.1016/j.physb.2013.01.026 Published: APR 1 2013



Abstract: In this study, potential efficiency of InGaN/Si mechanically stacked two-junction solar cell is theoretically investigated by optimizing the band gap and thickness of the top InGaN cell. Results show that the optimum conversion efficiency is 35.2% under AM 1.5G spectral illuminations, with the bandgap and thickness of top InGaN solar cell are 2.0eV and 600 nm, respectively. The results and discussion would be helpful in designing and fabricating high efficiency InGaN/Si mechanically stacked solar cell in experiment. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Li, Zhidong; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang;

Ding, Jieqin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Wang, Xiaoliang] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing, Peoples R China.

[Hou, Xun] Xi An Jiao Tong Univ, Xian 710049, Peoples R China.

Reprint Address: Xiao, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: hlxiao@semi.ac.cn

ISSN: 0921-4526

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Record 346 of 495

Title: Slotted Hybrid III-V/Silicon Single-Mode Laser

Author(s): Zhang, YJ (Zhang, Yejin); Wang, HL (Wang, Hailing); Qu, HW (Qu, Hongwei); Zhang, SL

(Zhang, Siriguleng); Zheng, WH (Zheng, Wanhua)


10.1109/LPT.2013.2248082 Published: APR 1 2013



Abstract: In this letter, a III-V/silicon hybrid single-mode laser operating at L band for photonic integrated circuits is presented. The AlGaInAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode-selection mechanism based on a slotted silicon waveguide is applied, which only needs i-line projection photolithography in the whole fabrication process. At room temperature, we obtain 0.85 and 3.5 mW output power in continuous-wave and pulse-wave regimes, respectively. The side-mode suppression ratio of larger than 25 dB is obtained from experiments.

Addresses: [Zhang, Yejin; Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Zheng, Wanhua] Chinese


Reprint Address: Zhang, YJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: yjzhang@semi.ac.cn; hlwang@sina.com; quhongwei@sina.com; zhangsi@sina.com; whuazheng@sina.com

ISSN: 1041-1135

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Record 347 of 495

Title: Photonic Generation of Phase Coded Microwave Pulses Using Cascaded Polarization Modulators

Author(s): Wang, LX (Wang, Li Xian); Li, W (Li, Wei); Wang, H (Wang, Hui); Zheng, JY (Zheng, Jian Yu);

Liu, JG (Liu, Jian Guo); Zhu, NH (Zhu, Ning Hua)





Abstract: We demonstrate a technique of generating a binary phase coded microwave pulse based on two cascaded polarization modulators (PolMs). The first PolM (PolM1) followed by an optical band-pass filter is used to generate two phase-locked and polarization orthogonal optical frequencies. The second

PolM (PolM2) aims to change their polarization states. A polarizer attached to the output of PolM2 allows only one of the two optical frequencies passing, or combines them with positive/negative phase difference. By changing the voltage level of the electrical modulation signal applied to PolM2, a series of binary phase coded microwave pulses is directly generated from a continuous wave microwave signal in the optical domain. In the proposed system, the precise amplitude control or amplification of the modulation signal are avoided. The waveform of the generated pulse is very stable. For a proof-of-concept experiment, a series of 25-GHz pulses with similar to 2.08-ns pulse duration and similar to 10.24-ns repetition time is generated. The pulses are phase coded by a 13-bit Barker code.

Addresses: [Wang, Li Xian; Li, Wei; Wang, Hui; Zheng, Jian Yu; Liu, Jian Guo; Zhu, Ning Hua] Chinese

Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Wang, LX (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples

R China.

E-mail Addresses: lxwang@semi.ac.cn; liwei05@semi.ac.cn; whui@semi.ac.cn; jyzheng@semi.ac.cn; jgliu@semi.ac.cn; nhzhu@semi.ac.cn

ISSN: 1041-1135

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Record 348 of 495

Title: High Performance Surface Grating Distributed Feedback Quantum Cascade Laser

Author(s): Zhang, JC (Zhang, Jinchuan); Liu, FQ (Liu, Fengqi); Wang, LJ (Wang, Lijun); Chen, JY (Chen,

Jianyan); Zhai, SQ (Zhai, Shenqiang); Liu, JQ (Liu, Junqi); Wang, ZG (Wang, Zhanguo)





Abstract: We report on the development of lambda similar to 4.7 mu m continuous-wave (CW) operation of surface grating distributed feedback (DFB) quantum cascade lasers (QCLs). A high wall plug efficiency

(WPE) of 7% is obtained at 15 degrees C from a single facet producing over 0.85 W of CW output power.

The threshold current density of DFB QCL is as low as 1.19 kA/cm at 15 degrees C and 2.29 kA/cm at 90

degrees C in CW mode. Single-mode operation with side mode suppression ratio above 25 dB is observed in the working temperature of 15 degrees-95 degrees C.

Addresses: [Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Chen, Jianyan; Zhai, Shenqiang; Liu, Junqi;

Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples

R China.

[Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Chen, Jianyan; Zhai, Shenqiang; Liu, Junqi; Wang, Zhanguo]


Reprint Address: Zhang, JC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: fqliu@semi.ac.cn; ljwang@semi.ac.cn

ISSN: 1041-1135

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Record 349 of 495

Title: Continuous blood separation utilizing spiral filtration microchannel with gradually varied width and micro-pillar array

Author(s): Geng, ZX (Geng, Zhaoxin); Ju, YR (Ju, Yanrui); Wang, W (Wang, Wei); Li, ZH (Li, Zhihong)

Source: SENSORS AND ACTUATORS B-CHEMICAL Volume: 180 Special Issue: SI Pages:

122-129 DOI: 10.1016/j.snb.2012.06.064 Published: APR 2013



Abstract: A microfluidic separation device that uses the cross flow and the centrifugation effect to separate human plasma from whole blood has been designed, fabricated and evaluated. The chip mainly consists of a spiral channel divided into inner and outer microchannels by micropillar arrays, which are employed to filter blood cells and plasma. The major feature of this chip is that the width of the inner channel decreases gradually from the inlet Lathe outlet in order to increase the separation efficiency.

Clogging and jamming in this filtration structure are efficiently alleviated. The performances of the separation device have been investigated theoretically and experimentally. Due to high purity of plasma and compact structure, this device can be used as either a plasma extraction device solely, or a pretreatment component that is integrated with other microfluidic device for point-of-care diagnostics. (C)

2012 Elsevier B.V. All rights reserved.

Addresses: [Geng, Zhaoxin; Ju, Yanrui; Wang, Wei; Li, Zhihong] Peking Univ, Inst Microelect, Natl Key

Lab Nano Micro Fabricat Technol, Beijing 100871, Peoples R China.

[Geng, Zhaoxin] Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China.

[Geng, Zhaoxin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Li, ZH (reprint author), Peking Univ, Inst Microelect, Natl Key Lab Nano Micro Fabricat

Technol, Beijing 100871, Peoples R China.

E-mail Addresses: Zhhli@ime.pku.edu.cn

ISSN: 0925-4005

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Record 350 of 495

Title: Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates

Author(s): Dong, L (Dong, Lin); Sun, GS (Sun, Guosheng); Yu, J (Yu, Jun); Zheng, L (Zheng, Liu); Liu, XF

(Liu, Xingfang); Zhang, F (Zhang, Feng); Yan, GG (Yan, Guoguo); Li, XG (Li, Xiguang); Wang, ZG (Wang,

Zhanguo)


10.1016/j.apsusc.2013.01.018 Published: APR 1 2013



Abstract: In situ etching and epitaxial growth have been performed on 4H-SiC 4 degrees off-axis substrates with 100 mm diameter. In situ etching process optimizations lead to obtain step-bunching free epilayer surfaces with roughnesses of 0.2 nm and 0.8 nm, which were grown on the substrates with and without chemical mechanical polishing, respectively. Yet the epilayer surfaces free of step-bunching are more likely to suffer from various types of morphological defects than the ones with step-bunching. An increase in chlorine/silicon ratio during epitaxy can effectively suppress the appearance of defects on the

step-bunching free epilayer surfaces. Using optimized epitaxial processes, we can obtain the total morphological defects density lower than 1 cm(-2) on 4H-SiC epilayers with surface roughness of 0.2 nm.

(c) 2013 Elsevier B.V. All rights reserved.

Addresses: [Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Wang,

Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Sun, Guosheng; Yu, Jun; Li, Xiguang] Tianyu Semicond Technol Co Ltd, Dongguan 523000, Peoples R

China.

Reprint Address: Dong, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: donglin09@semi.ac.cn

ISSN: 0169-4332

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Record 351 of 495

Title: Implementation of wavelength reusing upstream service based on distributed intensity conversion in ultrawideband-over-fiber system

Author(s): Zheng, JY (Zheng, Jianyu); Wang, H (Wang, Hui); Wang, LX (Wang, Lixian); Zhu, NH (Zhu,

Ninghua); Liu, JG (Liu, Jianguo); Wang, SL (Wang, Sunlong)

Source: OPTICS LETTERS Volume: 38 Issue: 7 Pages: 1167-1169 Published: APR 1 2013



Abstract: We propose and demonstrate a simple scheme for generating the ultrawideband (UWB) signals and reusing the wavelength for upstream service simultaneously by using a distributed polarization modulation-to-intensity modulation convertor. Through adjusting the static phase difference between transverse electric and transverse magnetic modes of the optical carrier (OC) and the angle between the polarization direction of the OC and the principal axis of the polarizers, the UWB doublet-like signals were generated. Meanwhile, the error-free transmission of the upstream signals with bit rate of 1.25 Gbit/s over 10 km fiber is achieved. The power penalty resulting from the interference of downstream signals is less than 0.3 dB. (C) 2013 Optical Society of America

Addresses: [Zheng, Jianyu; Wang, Hui; Wang, Lixian; Zhu, Ninghua; Liu, Jianguo; Wang, Sunlong]





ISSN: 0146-9592

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Record 352 of 495

Title: Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films

Author(s): Gao, XG (Gao, Xingguo); Liu, C (Liu, Chao); Yin, CH (Yin, Chunhai); Tao, DY (Tao, Dongyan);

Yang, C (Yang, Cheng); Man, BY (Man, Baoyuan)

Source: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE

MATERIALS Volume: 178 Issue: 6 Pages: 349-353 DOI: 10.1016/j.mseb.2012.12.005 Published:

APR 1 2013



Abstract: Diluted-magnetic GaN:Tb and AlGaN:Tb films have been fabricated by implanting Tb+ ions into c-plane (0 0 0 1) GaN and AlGaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and superconducting quantum interference device

(SQUID), respectively. The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. According to the SQUID analysis, both the

GaN:Tb and the AlGaN:Tb films exhibit clear room-temperature ferromagnetism. It is very interesting to find the saturation magnetization value of the AlGaN:Tb sample is almost two times that of GaN:Tb sample. The possible origin of the ferromagnetism of the samples was discussed briefly. (C) 2012

Elsevier B.V. All rights reserved.

Addresses: [Gao, Xingguo; Yang, Cheng; Man, Baoyuan] Shandong Normal Univ, Coll Phys & Elect,


[Gao, Xingguo] Shandong Polytech Univ, Sch Sci, Jinan 250353, Peoples R China.

[Liu, Chao; Yin, Chunhai; Tao, Dongyan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: cliu@semi.ac.cn; byman@sdnu.edu.cn

ISSN: 0921-5107

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Record 353 of 495

Title: Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy

Author(s): Guo, XL (Guo, Xiaolu); Ma, WQ (Ma, Wenquan); Huang, JL (Huang, Jianliang); Zhang, YH

(Zhang, Yanhua); Wei, Y (Wei, Yang); Cui, K (Cui, Kai); Cao, YL (Cao, Yulian); Li, Q (Li, Qiong)


045004 DOI: 10.1088/0268-1242/28/4/045004 Published: APR 2013



Abstract: We investigate the background doping level, mobility and conductivity of the absorber layer using the type-II InAs/GaSb structure grown by molecular beam epitaxy for the mid, long and very long wavelength (MW, LW and VLW) bands between 77 K and room temperature. It is found that the conduction of the absorber layer changes from p-to n-type when increasing temperature. The transition temperature occurs at 210, 140 and 85 K and the electron activation energy is 106, 71 and 32 meV for the MW, LW and VLW samples, respectively. The conduction change with respect to temperature is attributed to different activation energy between the residual electrons in the InAs layer and the residual holes in the GaSb layer. The detailed trend of the electrical properties is also discussed.

Addresses: [Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao,

Yulian; Li, Qiong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Guo, XL (reprint author), Chinese Acad Sci, Inst Semicond, Qinghua East Rd A 35,


E-mail Addresses: wqma@semi.ac.cn

ISSN: 0268-1242

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Record 354 of 495

Title: Dual-beam optically injected semiconductor laser for radio-over-fiber downlink transmission with tunable microwave subcarrier frequency

Author(s): Liu, YP (Liu, Yuping); Qi, XQ (Qi, Xiaoqiong); Xie, L (Xie, Liang)


10.1016/j.optcom.2012.11.008 Published: APR 1 2013



Abstract: We propose a downlink broadcast transmission scheme of radio-over-fiber (RoF) system based on period-one (P1) dynamic of dual-beam optically injected semiconductor laser with tunable microwave subcarrier frequency. The transmission performance of 2.5 Gb/s data in a 60 GHz RoF system is demonstrated through numerical simulations. It is found that the proposed transmission scheme can easily generate a single-sideband (SSB) optical modulation by adjusting the injection strength level of two master lasers (ML), which is favorable to reduce the fading effect due to chromatic dispersion.

Furthermore, influences of the pulse amplitudes and duty cycles of the downlink data on the transmission properties are investigated. It is observed that the oscillation of the relative power at the base station induced by fiber dispersion does not vary apparently with the modulation parameters. Once the SSB spectrum is generated by dual-beam optical injection, the downlink transmission performance of the proposed RoF system keeps good stability and reliability. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Liu, Yuping; Qi, Xiaoqiong; Xie, Liang] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Qi, XQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xqqi@semi.ac.cn

ISSN: 0030-4018

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Record 355 of 495

Title: Chemical trends of magnetic interaction in Mn-doped III-V semiconductors

Author(s): Peng, HW (Peng, Haowei); Li, JB (Li, Jingbo); Wei, SH (Wei, Su-Huai)


10.1063/1.4799164 Published: MAR 25 2013



Abstract: The trends of magnetic coupling strength in Mn-doped III-V semiconductors are explained using a physically transparent band-coupling model, based on first-principles calculations. According to this model, the stability of the ferromagnetism in Mn-doped III-V semiconductors should increase with both the strength of p-d coupling and an effective coupling range parameter, alpha. However, these two quantities counteract to each other, i.e., increased p-d coupling strength means a decreased alpha value.

Therefore, this competition will lead to the non-monotonic variation of ferromagnetic interaction in

Mn-doped common-cation III-V semiconductors as the anion becomes heavier. Our results suggest that

Mn-doped GaAs and AlAs are optimal materials for high T-C spintronics, in good agreement with experimental observations. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799164]

Addresses: [Peng, Haowei; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


[Wei, Su-Huai] Natl Renewable Energy Lab, Golden, CO 80401 USA.

Reprint Address: Peng, HW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab



ISSN: 0003-6951

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Record 356 of 495

Title: Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors

Author(s): Deng, HX (Deng, Hui-Xiong); Wei, SH (Wei, Su-Huai); Li, SS (Li, Shu-Shen); Li, JB (Li, Jingbo);

Walsh, A (Walsh, Aron)


10.1103/PhysRevB.87.125203 Published: MAR 21 2013



Abstract: Amorphous semiconductors are known to give rise to greatly reduced conductivity relative to their crystalline counterparts, which makes the recent development of amorphous oxide semiconductors with high electron mobility unexpected. Using first-principles molecular dynamics and electronic structure simulations, we have analyzed the electronic and optical properties of covalent and ionic oxide amorphous semiconductors. We observe that in covalent systems, amorphization introduces deep defect states inside the gap, resulting in a substantial deterioration of electrical conductivity. In contrast, in ionic systems, such as the transparent conducting oxide ZnO, amorphization does not create deep carrier-recombination centers, so the oxides still exhibit good conductivity and visible transparency relative to the crystalline phases. The origin of the conductivity imbalance between covalent and ionic amorphous semiconductors can be explained using a band coupling mechanism. DOI:

10.1103/PhysRevB.87.125203

Addresses: [Deng, Hui-Xiong; Wei, Su-Huai] Natl Renewable Energy Lab, Golden, CO 80401 USA.

[Li, Shu-Shen; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,


[Walsh, Aron] Univ Bath, Ctr Sustainable Chem Technol, Bath BA2 7AY, Avon, England.

[Walsh, Aron] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England.

Reprint Address: Deng, HX (reprint author), Natl Renewable Energy Lab, Golden, CO 80401 USA.

ISSN: 1098-0121

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Record 357 of 495

Title: Pseudomagnetoexcitons in strained graphene bilayers without external magnetic fields

Author(s): Wang, ZG (Wang, Zhigang); Fu, ZG (Fu, Zhen-Guo); Zheng, FW (Zheng, Fawei); Zhang, P

(Zhang, Ping)





Abstract: We propose a strained graphene double-layer (SGDL) system for detecting pseudomagnetoexcitons (PME) in the absence of external magnetic fields. The carriers in each graphene layer experience different strong pseudomagnetic fields (PMFs) due to strain engineering, which give rise to Landau quantization. The pseudo-Landau levels of electron-hole pairs under inhomogeneous PMFs in the SGDL are obtained analytically in the absence of Coulomb interactions.

Based on the derived optical absorption selection rule for PMEs, we interpret the optical absorption spectra as indicating the formation of Dirac-type PMEs. We also predict that in the presence of inhomogeneous PMFs, the superfluidity-normal phase-transition temperature of PMEs is greater than that under homogeneous PMFs. DOI: 10.1103/PhysRevB.87.125418

Addresses: [Wang, Zhigang; Fu, Zhen-Guo; Zheng, Fawei; Zhang, Ping] Inst Appl Phys & Computat

Math, LCP, Beijing 100088, Peoples R China.

[Fu, Zhen-Guo] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, Ping] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

Reprint Address: Zhang, P (reprint author), Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing


E-mail Addresses: zhang_ping@iapcm.ac.cn

ISSN: 1098-0121

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Record 358 of 495

Title: Wavelength and Mode-Spacing Tunable Dual-Mode Distributed Bragg Reflector Laser

Author(s): Yu, LQ (Yu, Liqiang); Lu, D (Lu, Dan); Zhao, LJ (Zhao, Lingjuan); Li, Y (Li, Yan); Ji, C (Ji,

Chen); Pan, JQ (Pan, Jiaoqing); Zhu, HL (Zhu, Hongliang); Wang, W (Wang, Wei)


10.1109/LPT.2013.2243723 Published: MAR 15 2013



Abstract: In this letter, we report a novel mode-beating distributed Bragg reflector (DBR) laser with dual-mode output. Both the working wavelengths and mode spacing of the dual-mode laser can be tuned when the currents injected into the DBR laser are adjusted. The tuning ranges of the laser wavelength and mode-beating frequency are [1527.20 nm, 1531.04 nm] and [91.88 GHz, 94.02 GHz], respectively. A fourth harmonic injection locking is also demonstrated to achieve a synchronized RF output at 93.23 GHz.

The phase noise of the RF output is measured by using the down-conversion method. A single sideband phase noise of 96.92 dBc/Hz with 1-MHz offset at a down-converted frequency of 13.23 GHz is achieved.

Addresses: [Yu, Liqiang; Lu, Dan; Zhao, Lingjuan; Ji, Chen; Pan, Jiaoqing; Zhu, Hongliang; Wang, Wei]

Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Li, Yan] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing


Reprint Address: Yu, LQ (reprint author), Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci,


E-mail Addresses: liyan1980@bupt.edu.cn; wwang@semi.ac.cn

ISSN: 1041-1135 yuliqiang10@semi.ac.cn; chenji@semi.ac.cn; ludan@semi.ac.cn; jqpan@semi.ac.cn; ljzhao@semi.ac.cn; zhuhl@red.semi.ac.cn;

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Record 359 of 495

Title: Hybrid III -V/silicon single-mode laser with periodic microstructures

Author(s): Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SRGL

(Zhang, Siriguleng); Ma, SD (Ma, Shaodong); Qi, AY (Qi, Aiyi); Feng, ZG (Feng, Zhigang); Peng, HL

(Peng, Hongling); Zheng, WH (Zheng, Wanhua)

Source: OPTICS LETTERS Volume: 38 Issue: 6 Pages: 842-844 Published: MAR 15 2013



Abstract: In this Letter, a III-V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III-V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. Over 10,000 h lifetime can be reached. (C) 2013 Optical Society of America

Addresses: [Zhang, Yejin; Qu, Hongwei; Wang, Hailing; Zhang, Siriguleng; Ma, Shaodong; Qi, Aiyi; Feng,

Zhigang; Peng, Hongling; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated




E-mail Addresses: yjzhang@semi.ac.cn

ISSN: 0146-9592

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Record 360 of 495

Title: Undetectable quantum transfer through a continuum

Author(s): Ping, J (Ping, Jing); Ye, Y (Ye, Yin); Xu, LT (Xu, Luting); Li, XQ (Li, Xin-Qi); Yan, YJ (Yan,

YiJing); Gurvitz, S (Gurvitz, Shmuel)

Source: PHYSICS LETTERS A Volume: 377 Issue: 9 Pages: 676-681 DOI:

10.1016/j.physleta.2013.01.010 Published: MAR 15 2013



Abstract: We demonstrate that a quantum particle, initially prepared in a quantum well, can propagate through a reservoir with a continuous spectrum and reappear in a distant well without being registered in the reservoir. It is shown that such a passage through the reservoir takes place even if the latter is continuously monitored. We discuss a possible experimental realization of such a teleportation phenomenon in mesoscopic systems. (c) 2013 Elsevier B.V. All rights reserved.

Addresses: [Ping, Jing; Ye, Yin; Li, Xin-Qi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


[Xu, Luting; Li, Xin-Qi] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.

[Yan, YiJing] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China.

[Gurvitz, Shmuel] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

[Gurvitz, Shmuel] Weizmann Inst Sci, Dept Particle Phys & Astrophys, IL-76100 Rehovot, Israel.

Reprint Address: Li, XQ (reprint author), Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R

China.

E-mail Addresses: xqli@red.semi.ac.cn

ISSN: 0375-9601

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Record 361 of 495

Title: Raman spectroscopy of shear and layer breathing modes in multilayer MoS2

Author(s): Zhang, X (Zhang, X.); Han, WP (Han, W. P.); Wu, JB (Wu, J. B.); Milana, S (Milana, S.); Lu, Y

(Lu, Y.); Li, QQ (Li, Q. Q.); Ferrari, AC (Ferrari, A. C.); Tan, PH (Tan, P. H.)





Abstract: We study by Raman scattering the shear and layer breathing modes in multilayer MoS2. These are identified by polarization measurements and symmetry analysis. Their positions change significantly with the number of layers, with different scaling for odd and even layers. A chain model can explain the results, with general applicability to any layered material, allowing a reliable diagnostic of their thickness.

Addresses: [Zhang, X.; Han, W. P.; Wu, J. B.; Milana, S.; Lu, Y.; Li, Q. Q.; Tan, P. H.] Chinese Acad Sci,

Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Milana, S.; Ferrari, A. C.] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 OFA, England.

Reprint Address: Zhang, X (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: acf26@eng.cam.ac.uk; phtan@semi.ac.cn

ISSN: 1098-0121

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Record 362 of 495

Title: Electron spin dynamics of ferromagnetic Ga1-xMnxAs across the insulator-to-metal transition

Author(s): Yue, H (Yue, Han); Zhao, CB (Zhao, Chunbo); Gao, HX (Gao, Haixia); Wang, HL (Wang,

Hailong); Yu, XZ (Yu, Xuezhe); Zhao, JH (Zhao, Jianhua); Zhang, XH (Zhang, Xinhui)


10.1063/1.4795535 Published: MAR 11 2013



Abstract: Electron spin dephasing dynamics of ferromagnetic Ga1-xMnxAs with Mn concentration spanning from 0.5% to 15% across the insulator-to-metal transition is systematically studied using time-resolved magneto-optical Kerr effect measurements. In the insulating Ga1-xMnxAs, the impurity scattering and s-d exchange scattering induced by the magnetic impurity Mn ions are responsible for the electron spin dephasing process. While in the metallic and near metallic regime, the electron-electron

Coulomb scattering becomes dominant over the impurity scattering on the spin dephasing process with

D'yakonov-Perel' mechanism. Our findings are important for better engineering of Mn impurity doping in order to achieve potential Ga1-xMnxAs-based spintronics application. (C) 2013 American Institute of

Physics. [http://dx.doi.org/10.1063/1.4795535]

Addresses: [Yue, Han; Zhao, Chunbo; Gao, Haixia; Wang, Hailong; Yu, Xuezhe; Zhao, Jianhua; Zhang,

Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,

Peoples R China.

Reprint Address: Yue, H (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices



ISSN: 0003-6951

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Record 363 of 495

Title: 1.82-mu m distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H2O sensing system

Author(s): Yu, HY (Yu, Hongyan); Pan, JQ (Pan, Jiaoqing); Shao, YB (Shao, Yongbo); Wang, BJ (Wang,

Baojun); Zhou, DB (Zhou, Daibing); Wang, W (Wang, Wei)


10.3788/COL201311.031404 Published: MAR 10 2013



Abstract: High-strained InGaAs/InGaAsP multiple quantum wells (MQWs) distributed feedback (DFB) lasers, fabricated using metal organic chemical vapor deposition, are presented at 1.82 mu m with a high side-mode-suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/degrees C, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be applied to H2O concentration sensing.

Addresses: [Yu, Hongyan; Pan, Jiaoqing; Shao, Yongbo; Wang, Baojun; Zhou, Daibing; Wang, Wei]


Reprint Address: Pan, JQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: jqpan@semi.ac.cn

ISSN: 1671-7694

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Record 364 of 495

Title: InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer

Author(s): Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Li, X (Li, Xiao); Liu, ZQ (Liu,

Zhiqiang); Zhang, L (Zhang, Lian); Guo, EQ (Guo, Enqing); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu,

Hongwei); Wang, GH (Wang, Guohong)

Source: PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND

ENGINEERING SCIENCES Volume: 469 Issue: 2151 Article Number: 20120652 DOI:

10.1098/rspa.2012.0652 Published: MAR 8 2013



Abstract: Vertical light-emitting diodes (VLEDs) with a highly reflective membrane (HRM) as current blocking layer (CBL) and a graphene transparent conductive layer (TCL) have been fabricated and characterized. High reflectance of HRM and high transmittance of graphene ensure less loss of the optical power. The VLEDs show improved optical output and less efficiency droop, thanks to the current spreading effect of HRM CBL and graphene TCL by preventing current crowding under the top electrode and thus increasing the internal and external quantum efficiency. With further acid modification, forward electrical characteristics of VLEDs are improved.

Addresses: [Wang, Liancheng; Zhang, Yiyun; Liu, Zhiqiang; Zhang, Lian; Guo, Enqing; Yi, Xiaoyan;

Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing


[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China.

[Zhu, Hongwei] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China.

Reprint Address: Zhu, HW (reprint author), Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R

China.

E-mail Addresses: spring@semi.ac.cn; hongweizhu@tsinghua.edu.cn

ISSN: 1364-5021

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Record 365 of 495

Title: Crystal structures and metastability of carbon-boron compounds C3B and C5B

Author(s): Mikhaylushkin, AS (Mikhaylushkin, Arkady S.); Zhang, XW (Zhang, Xiuwen); Zunger, A

(Zunger, Alex)





Abstract: The recent discovery of the diamondlike C3B and C5B compounds has raised hopes of revealing interesting properties and also elicits questions about the stability of such compounds. Using our implementation of the evolutionary global space-group optimization method, we have found ordered structural models for C3B (layered hexagonal) and C5B (diamondlike) with lower energies than previously obtained and revealing unusual layer-stacking sequences. The compounds are less stable than a mixture of freestanding lowest-energy phases of B, C, and C4B, thus C3B and C5B are not ground-state structures. Nevertheless, disordered diamondlike C3B and C5B can be formed exothermically at high temperature in the reaction [graphitelike C3B] + 2C -> [diamondlike C5B] and

[graphitelike C3B] -> [diamondlike C3B]. Thus, the disorder on the C and B sites of diamondlike C3B and

C5B is responsible for the observed phases. DOI: 10.1103/PhysRevB.87.094103

Addresses: [Mikhaylushkin, Arkady S.] Chinese Acad Sci, Inst Semicond, SKSLM, Beijing 100083,

Peoples R China.

[Mikhaylushkin, Arkady S.; Zhang, Xiuwen] Natl Renewable Energy Lab, Golden, CO 80401 USA.

[Zhang, Xiuwen] Colorado Sch Mines, Golden, CO 80401 USA.

[Zunger, Alex] Univ Colorado, Boulder, CO 80309 USA.

Reprint Address: Mikhaylushkin, AS (reprint author), Chinese Acad Sci, Inst Semicond, SKSLM, POB

912, Beijing 100083, Peoples R China.

E-mail Addresses: Xiuwen.Zhang@nrel.gov; alex.zunger@colorado.edu

ISSN: 1098-0121

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Record 366 of 495

Title: Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices

Author(s): Wang, KY (Wang, K. Y.); Blackburn, AM (Blackburn, A. M.); Wang, HF (Wang, H. F.);

Wunderlich, J (Wunderlich, J.); Williams, DA (Williams, D. A.)


10.1063/1.4794535 Published: MAR 4 2013



Abstract: We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads prevent the orbital spin states splitting with magnetic field up to 2 T at 4K. With increasing magnetic field further, both positive or negative coulomb peaks shift slopes are observed associating with clockwise and anticlockwise orbital state splitting. The strongly suppressed/enhanced of the conductance has been observed associating with the magnetic field induced orbital states splitting/converging. (C) 2013

American Institute of Physics. [http://dx.doi.org/10.1063/1.4794535]

Addresses: [Wang, K. Y.; Wang, H. F.] Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Blackburn, A. M.; Wunderlich, J.; Williams, D. A.] Hitachi Cambridge Lab, Cambridge CB3 0HE,

England.

Reprint Address: Wang, KY (reprint author), Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples

R China.


ISSN: 0003-6951

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Record 367 of 495

Title: Whispering-gallery mode lasing from patterned molecular single-crystalline microcavity array

Author(s): Fang, HH (Fang, Hong-Hua); Ding, R (Ding, Ran); Lu, SY (Lu, Shi-Yang); Yang, YD (Yang,

Yue-De); Chen, QD (Chen, Qi-Dai); Feng, J (Feng, Jing); Huang, YZ (Huang, Yong-Zhen); Sun, HB (Sun,

Hong-Bo)


10.1002/lpor.201200072 Published: MAR 2013



Abstract: Organic single-crystalline materials have attracted great attention for laser applications.

However, the fabrication of laser resonators and pattern of crystals are still intractable problems. Organic single crystals have been limited to fundamental property studies despite their superior photonic characteristics. In this work, whispering-gallery mode (WGM) resonators of BP1T and BP2T crystalline materials have been fabricated through a combination method with improved lithography and dry etching.

Crystalline microresonators with different geometries over a large area are top-down fabricated with submicrometer spatial resolution. WGM lasing oscillation from circular, hexagonal, pentagonal and square resonators is definitively observed. The BP1T and BP2T crystals are characterized with high refractive index, and stable lasing in aqueous solution is demonstrated besides in the air environment. It is expected that organic crystalline materials would be used for the practical applications in a variety of organic electronic and optical devices.

Addresses: [Fang, Hong-Hua; Ding, Ran; Chen, Qi-Dai; Feng, Jing; Sun, Hong-Bo] Jilin Univ, State Key

Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.

[Lu, Shi-Yang; Sun, Hong-Bo] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China.

[Yang, Yue-De; Huang, Yong-Zhen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


Reprint Address: Feng, J (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci &

Engn, 2699 Qianjin St, Changchun 130012, Peoples R China.

E-mail Addresses: jingfeng@jlu.edu.cn; hbsun@jlu.edu.cn

ISSN: 1863-8880

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Record 368 of 495

Title: Highly Efficient Silicon Michelson Interferometer Modulators

Author(s): Li, XY (Li, Xianyao); Xiao, X (Xiao, Xi); Xu, H (Xu, Hao); Li, ZY (Li, Zhiyong); Chu, T (Chu, Tao);

Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)





Abstract: We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 mu m-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer

(MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction.

Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit V pi L pi of 0.72 V . cm similar to 0.91V . cm under the bias of -1 V similar to -6 V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.

Addresses: [Li, Xianyao; Xiao, Xi; Xu, Hao; Li, Zhiyong; Chu, Tao; Yu, Jinzhong; Yu, Yude] Chinese Acad


Reprint Address: Li, XY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xianyaoli@semi.ac.cn; xixiao@semi.ac.cn; xuhao@semi.ac.cn; lizhy@semi.ac.cn; tchu@semi.ac.cn; jzyu@semi.ac.cn; yudeyu@semi.ac.cn

ISSN: 1041-1135

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Record 369 of 495

Title: Slow Surface Plasmons in Plasmonic Grating Waveguide

Author(s): Xu, Y (Xu, Yun); Zhang, J (Zhang, Jing); Song, GF (Song, Guofeng)





Abstract: A metal/air/metal (MAM) plasmonic grating waveguide (PGW) consisting of two parallel silver slabs with periodic corrugations on their inner boundaries is developed to slow down the group velocity of surface plasmon polaritons (SPPs) excited at near-infrared frequencies. For a Gaussian pulse excitation with the full width at half maxim (FWHM) of 222fs and the center wavelength of 1.58 mu m, the group velocity of 0.034c and the group velocity dispersion (GVD) of 0.8ps/mm/nm can be achieved in finite-difference time-domain (FDTD) simulations with pulse excitation. Furthermore, a chirped PGW with varying groove depth is also demonstrated as a way to trap light by adopting continuous excitation.

Addresses: [Xu, Yun; Zhang, Jing; Song, Guofeng] Chinese Acad Sci, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Xu, Y (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: xuyun@semi.ac.cn; gcrrr@semi.ac.cn; sgf@semi.ac.cn

ISSN: 1041-1135

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Record 370 of 495

Title: Measurement of Linewidth Enhancement Factor for 1.3-mu m InAs/GaAs Quantum Dot Lasers

Author(s): Xiao, JL (Xiao, Jin-Long); Guo, CC (Guo, Chu-Cai); Ji, HM (Ji, Hai-Ming); Xu, PF (Xu,

Peng-Fei); Yao, QF (Yao, Qi-Feng); Lv, XM (Lv, Xiao-Meng); Zou, LX (Zou, Ling-Xiu); Long, H (Long,

Heng); Yang, T (Yang, Tao); Huang, YZ (Huang, Yong-Zhen)





Abstract: We present a procedure for determining the linewidth enhancement factor (alpha factor) of semiconductor lasers under continuous-wave operation with a proper correction of thermal effects. Gain spectra are measured by the Fourier series expansion method, and the variations of refractive index are determined by the mode wavelength shift and Kramers-Kronig relation, respectively. The alpha factors are measured in a wide wavelength range from 1170 to 1320 nm for an InAs/GaAs quantum dot (QD)

laser with a cavity length of 440 mu m. The alpha factors of 0.42 and 0.79 are obtained at gain peak wavelength of 1210 nm for the excited state at the injection currents of 40 and 60 mA, and the corresponding values of 1.97 and 3.97 are obtained at a wavelength of 1285 nm, respectively. The results show a relative low alpha factor at the gain peak position of QD excited state. We also calculate theoretically the optical gain and alpha factor for the QD laser, and compare with the experimental results.

The results indicate that high injection current will result in higher alpha factor due to the appearance of asymmetry gain spectrum.

Addresses: [Xiao, Jin-Long; Guo, Chu-Cai; Yao, Qi-Feng; Lv, Xiao-Meng; Zou, Ling-Xiu; Long, Heng;

Huang, Yong-Zhen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


[Guo, Chu-Cai] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R

China.

[Ji, Hai-Ming; Xu, Peng-Fei; Yang, Tao] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


Reprint Address: Xiao, JL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: jlxiao@semi.ac.cn; gcc1981@semi.ac.cn; jhm@semi.ac.cn; pfxu@semi.ac.cn; qifengyao@semi.ac.cn; lvxiaomeng@semi.ac.cn; zoulingxiu@semi.ac.cn; longheng@semi.ac.cn; tyang@semi.ac.cn; yzhuang@semi.ac.cn

ISSN: 1041-1135

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Record 371 of 495

Title: Five-Port Optical Router Based on Microring Switches for Photonic Networks-on-Chip

Author(s): Ji, RQ (Ji, Ruiqiang); Xu, J (Xu, Jiang); Yang, L (Yang, Lin)





Abstract: We demonstrate a five-port optical router that is suitable for large-scale photonic networks-on-chip. The optical router is designed to passively route the optical signal travelling in one direction and actively route the optical signal making a turn. In the case that an XY dimension-order routing is used, the passive routing feature guarantees that the maximum power consumption to route the data through the network is a constant that is independent of the network size. The fabricated device has an efficient footprint of similar to 460 x 1000 mu m(2). The routing functionality of the device is verified by using a 12.5-Gbit/s optical signal. The capability of multiwavlength routing for the optical router is also explored and discussed.

Addresses: [Ji, Ruiqiang; Yang, Lin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


[Ji, Ruiqiang; Yang, Lin] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples

R China.

[Xu, Jiang] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R

China.

Reprint Address: Ji, RQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: jiruiqiang@semi.ac.cn; jiang.xu@ust.hk; lyang@semi.ac.cn

ISSN: 1041-1135

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Record 372 of 495

Title: Spectra of circular and linear photogalvanic effect at inter-band excitation in

In0.15Ga0.85As/Al0.3Ga0.7As multiple quantum wells

Author(s): Yu, JL (Yu, Jinling); Chen, YH (Chen, Yonghai); Cheng, SY (Cheng, Shuying); Lai, YF (Lai,

Yunfeng)

Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 49 Pages:

92-96 DOI: 10.1016/j.physe.2013.01.018 Published: MAR 2013



Abstract: Spectra of circular photogalvanic effect (CPGE) and linear photogalvanic effect (LPGE) for inter-band transition have been experimentally investigated in In0.15Ga0.85As/Al0.3Ga0.7As multiple quantum wells (QWs) at room temperature. The CPGE and LPGE spectra are quite similar during the spectral region corresponding to the transitions 1e1hh (the first valence subband of heavy hole to the first conduction band) and 1e2hh, which is also similar to that of the photoconductivity. Comparing the photocurrent induced by LPGE and CPGE along [1 1 0] and [1 (1) over bar 0] directions, we obtain the anisotropic ratio of the linear photogalvanic tensor chi and circular photogalvanic tensor gamma to be chi(xxz)/chi(yyz) = 3.6 and gamma(xy)/gamma(yx) = 1.3 (x parallel to[1 1 0] and y parallel to[1 (1) over bar 0]), which indicate that the symmetry of the structure belongs to C-2v point group and the Rashba spin splitting is the dominant mechanism to induce the k-linear spin splitting of the subband in the

In0.15Ga0.85As/Al0.3Ga0.7As QWs. The magnitude of the LPGE is nearly at the same order with that of the CPGE for the investigated spectral region at room temperature. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou

350108, Fujian Province, Peoples R China.

[Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Fuzhou


[Chen, Yonghai] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples

R China.

Reprint Address: Yu, JL (reprint author), Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian

Province, Peoples R China.


ISSN: 1386-9477

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Record 373 of 495

Title: Splitting of electromagnetically induced transparency window and appearing of gain due to radio frequency field

Author(s): Li, XL (Li Xiao-Li); Shang, YX (Shang Ya-Xuan); Sun, J (Sun Jiang)


10.7498/aps.62.064202 Published: MAR 2013



Abstract: Two resonant radio frequency fields are added to lambda three-level system in this paper. By discussing the behaviors of probing field absorption profiles under the effect of different Rabi frequencies of two radio frequency fields, the splitting of electromagnetically induced transparency (EIT) can be seen and the overlapping between EIT and gain can be obtained. The results show that the two radio frequency fields have different control functions on the system. The radio frequency field which interacts with hyperfine levels of ground state plays a role in the splitting of EIT, but the radio frequency field which interacts with hyperfine levels of excited state does not work on it. In addition only when the Rabi frequency of radio frequency field interacting with hyperfine levels of ground state is greater than with hyperfine levels of excited state, can the new features about the overlapping between EIT and gain be obtained.

Addresses: [Li Xiao-Li; Shang Ya-Xuan; Sun Jiang] Hebei Univ, Coll Phys Sci & Technol, Baoding


[Li Xiao-Li] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,

Peoples R China.

Reprint Address: Li, XL (reprint author), Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples

R China.

E-mail Addresses: xiaolixiaoli001@yahoo.com.cn

ISSN: 1000-3290

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Record 374 of 495

Title: High efficiency and high power continuous-wave semiconductor terahertz lasers at similar to 3.1

THz

Author(s): Liu, JQ (Liu, Junqi); Chen, JY (Chen, Jianyan); Wang, T (Wang, Tao); Li, YF (Li, Yanfang); Liu,

FQ (Liu, Fengqi); Li, L (Li, Lu); Wang, LJ (Wang, Lijun); Wang, ZG (Wang, Zhanguo)

Source: SOLID-STATE ELECTRONICS Volume: 81 Pages: 68-71 DOI: 10.1016/j.sse.2013.01.014

Published: MAR 2013



Abstract: Continuous-wave operation of semiconductor terahertz quantum cascade lasers at similar to

3.1 THz based on a bound-to-continuum transition design is described. The material physics and device performance is analyzed in detail. With good injection efficiency in the upper single isolated radiative state and efficient extraction from the lower radiative state, the maximum operating temperature is in excess of 90 K in pulsed and 70 K in continuous-wave mode. The peak power of 112.5 mW was obtained at 10 K in pulsed mode, indicating similar to 36 photons per injected electron for 120 periods of active region. In continuous-wave operation, collected power of 62 mW and 22 photons per electron was also achieved at 10 K. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Liu, Junqi; Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Li, Lu; Wang, Lijun; Wang,

Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R

China.

[Liu, Junqi; Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Wang, Lijun; Wang, Zhanguo] Beijing

Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

[Li, Yanfang] Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China.

Reprint Address: Liu, JQ (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond,



ISSN: 0038-1101

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Record 375 of 495

Title: EIT and MOLLOW Spectrum in N-Type Four-Level System

Author(s): Li, XL (Li Xiao-li); Meng, XD (Meng Xu-dong); Yang, ZC (Yang Zi-cai); Sun, J (Sun Jiang)

Source: SPECTROSCOPY AND SPECTRAL ANALYSIS Volume: 33 Issue: 3 Pages: 590-594 DOI:

10.3964/j.issn.1000-0593(2013)03-0590-05 Published: MAR 2013



Abstract: An N-type four level system where two coupling fields interact with two separate optical transitions was constructed in the present paper. By discussing the behaviors of probing field absorption profiles under the effect of different Rabi frequencies of two coupling fields, EIT, Mollow and

Autler-Townes doublet can be seen and mutual transformation between them can be obtained. Multiple transition channels in the system were found and the results show that the system can be divided into several subsystems according to the transition channels. Quantum interference between different transition channels can be realized through different dividing methods, so three nonlinear effects with different generating conditions and physical nature can be seen in the system.

Addresses: [Li Xiao-li; Yang Zi-cai; Sun Jiang] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002,

Peoples R China.

[Li Xiao-li] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,

Peoples R China.

[Meng Xu-dong] Hebei North Univ, Dept Phys, Zhangjiakou 075000, Peoples R China.

Reprint Address: Li, XL (reprint author), Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples

R China.

E-mail Addresses: xiaolixiaoli001@yahoo.com.cn

ISSN: 1000-0593

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Record 376 of 495

Title: Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation

Author(s): Tao, DY (Tao Dong-yan); Liu, C (Liu Chao); Yin, CH (Yin Chun-hai); Zeng, YP (Zeng Yi-ping)

Source: SPECTROSCOPY AND SPECTRAL ANALYSIS Volume: 33 Issue: 3 Pages: 699-703 DOI:

10.3964/j.issn.1000-0593(2013)03-0699-05 Published: MAR 2013



Abstract: U-, n- and p-GaN Er films were prepared by ion implantation method. Three carrier types of

samples were studied by Raman spectra analysis. After Er+ ion implantation into GaN samples, new

Raman peaks at wavenumber of 293, 362 (sic) 670 cm(-1) appeared, where 293 cm(-1) was considered as disordered activation of Raman scattering (DARS), 362 and 670 cm(-1) may be associated with GaN lattice defects formed after ion implantation. The E-2 (high) characteristic peak moves to the high frequency before and after GaN Er samples annealing at 800 degrees C, indicating that GaN lattice is under the compressive stress. The Lorenz fitting was used to analysed the occurrences of A(1) (LO) peak in different samples which is composed of the uncoupled mode LO and the plasmon coupling mode

LPP+, qualitatively pointing out the carrier concentration variation of a series of GaN : Er samples.

Addresses: [Tao Dong-yan; Liu Chao; Yin Chun-hai; Zeng Yi-ping] Chinese Acad Sci, Inst Semicond, Key


Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: dongyantao@semi.ac.cn; cliu@semi.ac.cn

ISSN: 1000-0593

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Record 377 of 495

Title: Multiwall Nanotubes, Multilayers, and Hybrid Nanostructures: New Frontiers for Technology and

Raman Spectroscopy

Author(s): Bonaccorso, F (Bonaccorso, Francesco); Tan, PH (Tan, Ping-Heng); Ferrari, AC (Ferrari,

Andrea C.)

Source: ACS NANO Volume: 7 Issue: 3 Pages: 1838-1844 DOI: 10.1021/nn400758r Published:

MAR 2013



Abstract: Technological progress is determined, to a great extent, by developments in material science.

Breakthroughs can happen when a new type of material or new combinations of known materials with different dimensionality and functionality are created. Multi layered structures, being planar or concentric, are now emerging as major players at the forefront of research. Raman spectroscopy Is a well-established characterization technique for carbon nanomaterials and is being developed for layered materials. In this Issue of ACS Nano, Hirschmann et al. investigate triple-wall carbon nanotubes via resonant Raman spectroscopy, showing how a wealth of Information can be derived about these complex structures. The next challenge Is to tackle hybrid heterostructures, consisting of different planar or concentric materials, arranged "on demand" to achieve targeted properties.

Addresses: [Bonaccorso, Francesco; Ferrari, Andrea C.] Univ Cambridge, Cambridge Graphene Ctr,

Cambridge CB3 0FA, England.

[Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


Reprint Address: Ferrari, AC (reprint author), Univ Cambridge, Cambridge Graphene Ctr, 9 JJ Thomson

Ave, Cambridge CB3 0FA, England.

E-mail Addresses: acf26@eng.cam.ac.uk

ISSN: 1936-0851

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Record 378 of 495

Title: High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy

Author(s): Su, SJ (Su Shao-Jian); Zhang, DL (Zhang Dong-Liang); Zhang, GZ (Zhang Guang-Ze); Xue,

CL (Xue Chun-Lai); Cheng, BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)


10.7498/aps.62.058101 Published: MAR 2013



Abstract: As a new group-IV semiconductor alloy, Ge1-xSnx is a very promising material for applications in photonic and microelectronic devices. In this work, high-quality germanium-tin (Ge1-xSnx) alloys are grown on Ge(001) substrates by molecular beam epitaxy, with x = 1.5%, 2.4%, 2.8%, 5.3%, and 14%.

The Ge1-xSnx alloys are characterized by high resolution X-ray diffraction (HR-XRD), Rutherford backscattering spectra (RBS), and transmission electron micrograph (TEM). For the samples with Sn composition x <= 5.3%, the Ge1-xSnx alloys each exhibit a very high crystalline quality. The ratio of

channel yield to random yield (chi(min)) in the RBS spectrum is only about 5%, and the full width at half maximum (FWHM) of the Ge1-xSnx peak in HR-XRD curve is 100 ''. For the sample with x = 14%, the crystalline quality of the alloy is degraded and FWHM is 264.6 ''.

Addresses: [Su Shao-Jian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Zhang Dong-Liang; Zhang Guang-Ze; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad Sci,





ISSN: 1000-3290

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Record 379 of 495

Title: Topology identification of uncertain nonlinearly coupled complex networks with delays based on anticipatory synchronization

Author(s): Che, YQ (Che, Yanqiu); Li, RX (Li, Ruixue); Han, CX (Han, Chunxiao); Cui, SG (Cui, Shigang);

Wang, J (Wang, Jiang); Wei, XL (Wei, Xile); Deng, B (Deng, Bin)

Source: CHAOS Volume: 23 Issue: 1 Article Number: 013127 DOI: 10.1063/1.4793541

Published: MAR 2013



Abstract: This paper presents an adaptive anticipatory synchronization based method for simultaneous identification of topology and parameters of uncertain nonlinearly coupled complex dynamical networks with time delays. An adaptive controller is proposed, based on Lyapunov stability theorem and Barbalat's

Lemma, to guarantee the stability of the anticipatory synchronization manifold between drive and response networks. Meanwhile, not only the identification criteria of network topology and system parameters are obtained but also the anticipatory time is identified. Numerical simulation results illustrate the effectiveness of the proposed method. (C) 2013 American Institute of Physics.

[http://dx.doi.org/10.1063/1.4793541]

Addresses: [Che, Yanqiu; Li, Ruixue; Han, Chunxiao; Cui, Shigang] Tianjin Univ Technol & Educ, Tianjin

Key Lab Informat Sensing & Intelligent Co, Tianjin 300222, Peoples R China.

[Che, Yanqiu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Jiang; Wei, Xile; Deng, Bin] Tianjin Univ, Sch Elect Engn & Automat, Tianjin 300072, Peoples R

China.

Reprint Address: Che, YQ (reprint author), Tianjin Univ Technol & Educ, Tianjin Key Lab Informat

Sensing & Intelligent Co, Tianjin 300222, Peoples R China.

E-mail Addresses: yqche@tju.edu.cn

ISSN: 1054-1500

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Record 380 of 495

Title: High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical

Interconnection

Author(s): Li, C (Li, Chong); Xue, CL (Xue, Chunlai); Liu, Z (Liu, Zhi); Cheng, BW (Cheng, Buwen); Li, CB

(Li, Chuanbo); Wang, QM (Wang, Qiming)


DOI: 10.1109/TED.2013.2241066 Published: MAR 2013



Abstract: In this paper, we report efficient high-speed top-illuminated p-i-n photodiodes with high responsivity fabricated from germanium (Ge) films grown directly on silicon-on-insulator substrates. The devices were characterized with respect to their dark current, responsivity, and 3-dB bandwidth (BW) in the near infrared. For a 20-mu m-diameter device at room temperature, the dark current densities were approximately 38.3 mA/cm(2) at -1 V. The responsivity (R) at 1.55 mu m was 0.30 A/W, corresponding to a quantum efficiency of 24%. The 3-dB BW of the detector with 20-mu m diameter is as high as 23.3

GHz.

Addresses: [Li, Chong; Xue, Chunlai; Liu, Zhi; Cheng, Buwen; Li, Chuanbo; Wang, Qiming] Chinese


Reprint Address: Li, C (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: chli@semi.ac.cn; clxue@semi.ac.cn; zhiliu@semi.ac.cn; cbw@semi.ac.cn; cbli@semi.ac.cn; qmwang@semi.ac.cn

ISSN: 0018-9383

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Record 381 of 495

Title: High Response in aTellurium-Supersaturated Silicon Photodiode

Author(s): Wang, XY (Wang Xi-Yuan); Huang, YG (Huang Yong-Guang); Liu, DW (Liu De-Wei); Zhu, XN

(Zhu Xiao-Ning); Zhu, HL (Zhu Hong-Liang)


10.1088/0256-307X/30/3/036101 Published: MAR 2013



Abstract: Single crystalline silicon supersaturated with tellurium are formed by ion implantation followed by excimer nanosecond pulsed laser melting (PLM). The lattice damaged by ion implantation is restored during the PLM process, and dopants are effectively activated. The hyperdoped layer exhibits high and broad optical absorption from 400 to 2500 nm. The n(+)p photodiodes fabricated from these materials show high response (6.9A/W at 1000 nm) with reverse bias 12V at room temperature. The corresponding cut-off wavelength is 1258 nm. The amount of gain and extended cut-off wavelength both increase with increasing reverse bias voltage; above 100% external quantum efficiency is observed even at a reverse bias of 1 V. The cut-off wavelength with 0V bias is shorter than the commercial silicon detector. This implies that the Burstein-Moss shift is due to hyperdoping. The amount of the extended cut-off wavelength increases with increasing reverse bias voltage, suggesting existence of the Franz-Keldysh effect.

Addresses: [Wang Xi-Yuan; Huang Yong-Guang; Liu De-Wei; Zhu Xiao-Ning; Zhu Hong-Liang] Chinese

Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Liu De-Wei] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China.

Reprint Address: Huang, YG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat


E-mail Addresses: yghuang@red.semi.ac.cn

ISSN: 0256-307X

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Record 382 of 495

Title: The Generation of a Compact Azimuthally Polarized Vertical-Cavity Surface Emitting Laser Beam with Radial Slits

Author(s): Xu, BZ (Xu Bin-Zong); Liu, JT (Liu Jie-Tao); Cai, LK (Cai Li-Kang); Hu, HF (Hu Hai-Feng);

Wang, Q (Wang Qing); Wei, X (Wei Xin); Song, GF (Song Guo-Feng)


10.1088/0256-307X/30/3/034206 Published: MAR 2013



Abstract: We propose the simple and efficient generation of a compact azimuthally polarized laser beam.

Radial slits with annular distribution are patterned onto the output facet of a standard vertical-cavity surface emitting laser. Due to the polarization modulation of the surface plasmon polariton mode excited by the radial slits, a compact azimuthally polarized laser beam at 850 nm is experimentally demonstrated.

The finite-difference time-domain method is introduced to analyze the polarization characteristics of the transmitted light through the radial slit, which agrees well with our experimental results.

Addresses: [Xu Bin-Zong; Liu Jie-Tao; Cai Li-Kang; Hu Hai-Feng; Wang Qing; Wei Xin; Song Guo-Feng]



China.

E-mail Addresses: sgf@red.semi.ac.cn

ISSN: 0256-307X

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Record 383 of 495

Title: Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations

With Sub-400 degrees C Si2H6 Passivation

Author(s): Gong, X (Gong, Xiao); Han, GQ (Han, Genquan); Bai, F (Bai, Fan); Su, SJ (Su, Shaojian);

Guo, PF (Guo, Pengfei); Yang, Y (Yang, Yue); Cheng, R (Cheng, Ran); Zhang, DL (Zhang, Dongliang);

Zhang, GZ (Zhang, Guangze); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Pan, JS (Pan,

Jisheng); Zhang, Z (Zhang, Zheng); Tok, ES (Tok, Eng Soon); Antoniadis, D (Antoniadis, Dimitri); Yeo,

YC (Yeo, Yee-Chia)


10.1109/LED.2012.2236880 Published: MAR 2013



Abstract: In this letter, we report the first study of the dependence of carrier mobility anddrive current

I-Dsat of Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained Ge0.958Sn0.042 channels were grown on (100) and (111)

Ge substrates. Sub-400 degrees C Si2H6 treatment was introduced for the passivation of the GeSn surface prior to gate stack formation. Source/drain series resistance and subthreshold swing S were found to be independent of surface orientation. The smallest reported S of 130 mV/decade for GeSn pMOSFETs is achieved. The (111)oriented device demonstrates 13% higher IDsat over the (100)oriented one at a V-GS-V-TH of -0.6 V and V-DS of -0.9 V. We also found that GeSn pMOSFETs with (111) surface orientation show 18% higher hole mobility than GeSn pMOSFETs with (100) orientation.

Addresses: [Gong, Xiao; Han, Genquan; Bai, Fan; Guo, Pengfei; Yang, Yue; Cheng, Ran; Yeo, Yee-Chia]

Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond,


[Pan, Jisheng] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore.

[Pan, Jisheng; Tok, Eng Soon] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore.

[Zhang, Zheng] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore.

[Antoniadis, Dimitri] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA.

Reprint Address: Gong, X (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, Singapore

117576, Singapore.

E-mail Addresses: hangenquan@ieee.org; yeo@ieee.org

ISSN: 0741-3106

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Record 384 of 495

Title: Ultraviolet Detector Based on SrZr0.1Ti0.9O3 Film

Author(s): Zhang, M (Zhang, Min); Chen, Y (Chen, Yu); Zhang, HF (Zhang, Haifeng); Chen, WY (Chen,

Weiyou); Lv, KB (Lv, Kaibo); Ruan, SP (Ruan, Shengping)


10.1109/LED.2012.2236072 Published: MAR 2013



Abstract: In this letter, a nanocrystalline SrZr0.1Ti0.9O3 thin film was synthesized by sol-gel method and characterized by means of X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and UV-visible absorption spectra. Interdigitated Au electrodes were deposited on the film to fabricate metal-semiconductor-metal ultraviolet photodetector. At 5-V bias, the dark current of the device was 41 pA. Under the irradiation of 260-nm UV light, peak responsivity of 94 mA/W was achieved, which was higher than that of pure SrTiO3-based photodetectors. The higher responsivity of the SrZr0.1Ti0.9O3 device may be due to the introduction of zirconia, which would induce more oxygen vacancies. The

UV/visible rejection ratio R-260 nm/R-380 nm was more than three orders of magnitude, indicating excellent sensitivity. The rise time and fall time of the device were 3.8 and 565 ms, respectively.

Addresses: [Zhang, Min; Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping] Jilin

Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Zhang, Min; Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping] Chinese Acad Sci,


Reprint Address: Zhang, M (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Changchun


E-mail Addresses: chenyu@semi.ac.cn; rsp1226@gmail.com

ISSN: 0741-3106

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Record 385 of 495

Title: High response solar-blind ultraviolet photodetector based on Zr0.5Ti0.5O2 film

Author(s): Zhang, M (Zhang, Min); Gu, XH (Gu, Xuehui); Lv, KB (Lv, Kaibo); Dong, W (Dong, Wei); Ruan,

SP (Ruan, Shengping); Chen, Y (Chen, Yu); Zhang, HF (Zhang, Haifeng)


10.1016/j.apsusc.2012.12.084 Published: MAR 1 2013



Abstract: In this letter, high response solar-blind Zr0.5Ti0.5O2 ultraviolet detectors with Au and Pt electrodes were fabricated. The stability and photoelectric characteristics of the devices at different temperature and relative humidity were studied. The detectors covered the whole solar-blind spectrum range and responded mainly in 200-290 nm. At 5 V bias, 25 degrees C and 33% RH, the dark current of the detector with Pt electrodes was only 17 pA. Under the radiation of 250 nm UV light, a high responsivity of 620 mA/W was obtained for Pt electrodes device. Moreover, the detector also exhibited a fast response time: the rise and fall time were 424.1 and 154 ms, respectively. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Zhang, Min; Gu, Xuehui; Lv, Kaibo; Dong, Wei; Ruan, Shengping] Jilin Univ, State Key Lab

Integrated Optoelect, Changchun 130012, Peoples R China.


[Zhang, Haifeng] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA.

Reprint Address: Ruan, SP (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, 2699 Qianjin

St, Changchun 130012, Peoples R China.

E-mail Addresses: rsp1226@gmail.com; chenyu@semi.ac.cn

ISSN: 0169-4332

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Record 386 of 495

Title: 2013 3rd issue of SCIENCE CHINA Technological Sciences 11431 (Special Topic on Optoelectronic

Technology and Its Applications(537-628)

Author(s): Zhu, NH (Zhu NingHua); Su, YK (Su YiKai); Liu, JG (Liu JianGuo)


DOI: 10.1007/s11431-012-5111-3 Published: MAR 2013



Addresses: [Zhu NingHua; Liu JianGuo] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R

China.

[Su YiKai] Shanghai Jiao Tong Univ, Ctr Optoelect Mat & Devices, Shanghai, Peoples R China.

Reprint Address: Zhu, NH (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R

China.

ISSN: 1674-7321

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Record 387 of 495

Title: Output characteristics of square and circular resonator microlasers connected with two output waveguides

Author(s): Huang, YZ (Huang YongZhen); Lu, XM (Lu XiaoMeng); Lin, JD (Lin JianDong); Du, Y (Du Yun)





Abstract: Square and circular resonator microlasers connected with two output waveguides are investigated for correlation of output powers from the two output ports. The square resonator microlasers with two output waveguides connected at the midpoint of one side and one vertex are fabricated and

tested by measuring the output power versus injection current and the laser spectra of the two ports. The laser spectra indicated that the output power correlation between the two output ports is very weak because of different lasing modes in different ports of the square microlaser. Circular resonator microlaser with two output waveguides can realize single mode operation and has good output correlation from the two ports. So the output power from one port of the circular microlasers can be monitored by that of another port.

Addresses: [Huang YongZhen; Lu XiaoMeng; Lin JianDong; Du Yun] Chinese Acad Sci, Inst Semicond,





ISSN: 1674-7321

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Record 388 of 495

Title: InP based DFB laser array integrated with MMI coupler

Author(s): Zhu, HL (Zhu HongLiang); Ma, L (Ma Li); Liang, S (Liang Song); Zhang, C (Zhang Can); Wang,

BJ (Wang BaoJun); Zhao, LJ (Zhao LingJuan); Wang, W (Wang Wei)





Abstract: The techniques used for the fabrication of photonic integrated circuit (PIC) chip are introduced briefly. Then a four channel DFB laser array integrated with MMI coupler and semiconductor optical amplifier (SOA) fabricated with butt-joint technique, varied ridge width and holographic exposure techniques is reported.

Addresses: [Zhu HongLiang; Ma Li; Liang Song; Zhang Can; Wang BaoJun; Zhao LingJuan; Wang Wei]


[Ma Li] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.




ISSN: 1674-7321

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Record 389 of 495

Title: Development of silicon photonic devices for optical interconnects

Author(s): Xiao, X (Xiao Xi); Li, ZY (Li ZhiYong); Chu, T (Chu Tao); Xu, H (Xu Hao); Li, XY (Li XianYao);

Nemkova, A (Nemkova, Anastasia); Kang, X (Kang Xiong); Yu, YD (Yu YuDe); Yu, JZ (Yu JinZhong)





Abstract: Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling.

This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%.

Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s(-1).

Addresses: [Xiao Xi; Li ZhiYong; Chu Tao; Xu Hao; Li XianYao; Nemkova, Anastasia; Kang Xiong; Yu

YuDe; Yu JinZhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


Reprint Address: Yu, JZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: jzyu@semi.ac.cn

ISSN: 1674-7321

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Record 390 of 495

Title: Fast tunable and broadband microwave sweep-frequency source based on photonic technology

Author(s): Zhu, NH (Zhu NingHua); Du, YX (Du YuanXin); Wu, XM (Wu XuMing); Zheng, JY (Zheng

JianYu); Wang, H (Wang Hui); Liu, JG (Liu JianGuo)


DOI: 10.1007/s11431-012-5117-x Published: MAR 2013



Abstract: A high-speed broadband tunable microwave source utilizing the wavelength tunable characteristics of distributed Bragg reflector (DBR) laser is proposed and demonstrated. The wavelength tuning of the laser is achieved instantaneously by controlling the voltage of the phase section of the DBR laser. By means of optical delay self-heterodyne technology, the microwave signal with the property of frequency broadband tuning is generated. Sweep speeds of 5 and 40 mu s of the sweep-frequency source prototype were achieved and the maximum tuning range was up to 38.45 GHz.

Addresses: [Zhu NingHua; Du YuanXin; Wu XuMing; Zheng JianYu; Wang Hui; Liu JianGuo] Chinese





ISSN: 1674-7321

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Record 391 of 495

Title: Dual current injection tunable SBG semiconductor laser with asymmetric p equivalent phase shift

Author(s): Zhou, YT (Zhou, Yating); Hou, J (Hou, Jie); Chen, XF (Chen, Xiangfei)

Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Volume: 55 Issue: 3 Pages:

692-696 DOI: 10.1002/mop.27357 Published: MAR 2013



Abstract: An asymmetric p equivalent phase shift sampled Bragg grating (SBG) semiconductor, which is consisted of two section with the same length but different sampling duty cycle 0.4 and 0.6, is investigated experimentally. By increasing the two injected currents of the studied laser from 15 mA to

120 mA, the lasing wavelength can be tuned by 2.1 nm. Combining selecting appropriate sampling period, the lasing wavelength of the laser can be tuned to meet the ITU-T standard. Because of high yield and low cost, this type of SBG laser is very beneficial for designing and fabricating monolithically integrated wideband multiwavelength laser array for photonic integrated circuits in next generation fiber-optic system. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:692696, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27357

Addresses: [Zhou, Yating] Changzhou Inst Technol, Sch Sci, Changzhou 213002, Peoples R China.

[Zhou, Yating; Chen, Xiangfei] Nanjing Univ, Coll Engn & Appl Sci, Nanjing, Jiangsu, Peoples R China.

[Hou, Jie] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.

Reprint Address: Zhou, YT (reprint author), Changzhou Inst Technol, Sch Sci, Changzhou 213002,

Peoples R China.

E-mail Addresses: zhou-yating@163.com

ISSN: 0895-2477

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Record 392 of 495

Title: Analysis of Mode Coupling and Threshold Gain Control for Nanocircular Resonators Confined by

Isolation and Metallic Layers

Author(s): Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv,

Xiao-Meng); Lin, JD (Lin, Jian-Dong); Yang, YD (Yang, Yue-De)

Source: JOURNAL OF LIGHTWAVE TECHNOLOGY Volume: 31 Issue: 5 Pages: 786-792 DOI:

10.1109/JLT.2012.2234437 Published: MAR 1 2013



Abstract: Mode coupling and the control of mode Q factor and threshold gain are analyzed for nanocircular resonators confined by isolation and metallic layers based on solving eigenvalue equation for multiple-layer structure circular resonators. For nanocircular resonators only confined by a metallic layer, the metallic layer can enhance the mode confinement for transverse magnetic (TM) whispering-gallery modes (WGMs) and result in high Q TM WGMs. But transverse electric (TE) WGMs can form hybrid modes of surface plasmon polaritons and dielectric modes, with the mode Q factors limited by the metallic layer absorption. By introducing a low index isolation layer between the resonator and the metallic layer, we can greatly enhance the mode Q factors for TE WGMs. However, the mode coupling between different radial modes and the variation of the optical confinement factor in the active layer can result in the oscillation of the mode Q factor and threshold gain versus the isolation layer thickness. The optimization of the isolation layer thickness is important to enhance the mode Q factor and the optical confinement factor for realizing low threshold gain.

Addresses: [Yao, Qi-Feng; Huang, Yong-Zhen; Zou, Ling-Xiu; Lv, Xiao-Meng; Lin, Jian-Dong; Yang,

Yue-De] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples

R China.

Reprint Address: Yao, QF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: qifengyao@semi.ac.cn; yzhuang@semi.ac.cn; zoulingxiu@semi.ac.cn; lvxiaomeng@semi.ac.cn; linjiandong@semi.ac.cn; yyd@semi.ac.cn

ISSN: 0733-8724

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Record 393 of 495

Title: P-type reduced graphene oxide membranes induced by iodine doping

Author(s): Wang, Z (Wang, Zhi); Wang, WZ (Wang, Wenzhong); Wang, ML (Wang, Meili); Meng, XQ

(Meng, Xiuqing); Li, JB (Li, Jingbo)

Source: JOURNAL OF MATERIALS SCIENCE Volume: 48 Issue: 5 Pages: 2284-2289 DOI:

10.1007/s10853-012-7006-x Published: MAR 2013



Abstract: Reduced graphene oxide membranes with electrical conductivity of 201 S/cm were successfully fabricated by a simple hydriodic acid reducing method. It has been shown that the obtained graphene oxide membranes exhibit a p-type conductive property with a hole carrier concentration of 3.66 x 10(17) cm(-2) and a mobility of 13.7 cm(2)/Vs. The p-type conductive property was mainly attributed to iodine atom adsorption on C atom layer, supported by the energy dispersive X-ray spectrometry and the first-principles calculations based on the density functional theory. The Bader method was used to analyze charge density of each atom. It has been shown that 0.38 electrons per unit cell are transferred to I atom from the C atom layer which leaves a lot of holes.

Addresses: [Wang, Zhi; Wang, Meili; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab


[Wang, Wenzhong] Minzu Univ China, Sch Sci, Beijing 100081, Peoples R China.

[Meng, Xiuqing] Zhejiang Normal Univ, Jinhua 321004, Zhejiang, Peoples R China.

Reprint Address: Wang, Z (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: zhiwang@semi.ac.cn; jbli@semi.ac.cn

ISSN: 0022-2461

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Record 394 of 495

Title: In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy

Author(s): Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Bo, X (Bo, X.); Jiang, CY (Jiang, C. Y.); Ye, XL (Ye, X.

L.); Wu, SJ (Wu, S. J.); Gao, HS (Gao, H. S.)


10.1063/1.4790577 Published: FEB 28 2013



Abstract: In-plane optical anisotropy (IPOA) in modulation-doped (001) GaAs/AlGaAs quantum wells

(QWs) has been studied by reflectance difference spectroscopy (RDS). By changing the position of the delta-doping layer, we introduce an asymmetric potential into the quantum well system, which results in an additional IPOA. Compared to symmetrically doped and undoped structure, the asymmetrically doped

QWs exhibit larger IPOA, which is clearly demonstrated both by the RDS results measured at 80 K and the linear extrapolation of the RDS signal under uniaxial strain measured at room temperature. Numerical calculations within the envelope function framework show that the asymmetric potential induced by asymmetrically doping will introduce additional hole-mixing coefficients. This work demonstrates that the

IPOA of QWs can be tailored by changing the delta-doping position. (C) 2013 American Institute of


Addresses: [Yu, J. L.; Chen, Y. H.; Bo, X.; Jiang, C. Y.; Ye, X. L.; Wu, S. J.; Gao, H. S.] Chinese Acad Sci,


[Yu, J. L.] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian Province, Peoples R China.

[Yu, J. L.] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Fujian Province, Peoples

R China.



E-mail Addresses: yhchen@semi.ac.cn

ISSN: 0021-8979

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Record 395 of 495

Title: High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization

Author(s): Xiao, X (Xiao, Xi); Xu, H (Xu, Hao); Li, XY (Li, Xianyao); Li, ZY (Li, Zhiyong); Chu, T (Chu, Tao);

Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)

Source: OPTICS EXPRESS Volume: 21 Issue: 4 Pages: 4116-4125 Published: FEB 25 2013



Abstract: We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB.

A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America

Addresses: [Xiao, Xi; Xu, Hao; Li, Xianyao; Li, Zhiyong; Chu, Tao; Yu, Yude; Yu, Jinzhong] Chinese Acad


Reprint Address: Xiao, X (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1094-4087

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Record 396 of 495

Title: Anomalous electron collimation in HgTe quantum wells with inverted band structure

Author(s): Zou, YL (Zou, Y. L.); Zhang, LB (Zhang, L. B.); Song, JT (Song, J. T.)

Source: JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 25 Issue: 7 Article Number:

075801 DOI: 10.1088/0953-8984/25/7/075801 Published: FEB 20 2013



Abstract: We investigate the electron collimation behavior in HgTe quantum wells (QWs) with a magnetic-electric barrier induced by a ferromagnetic metal stripe. We find that electrons can transmit perfectly through the magnetic-electric barrier at some specific incidence angles. These angles can be controlled by the tuning gate voltage, local magnetic field and Fermi energy of incident electrons in QWs with appropriate barrier length. This collimation feature can be used to construct momentum filters in

HgTe QWs and has potential application in nanodevices.

Addresses: [Zou, Y. L.] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.

[Zhang, L. B.] Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China.

[Song, J. T.] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China.

[Song, J. T.] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Hebei, Peoples R

China.

Reprint Address: Zou, YL (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R

China.

E-mail Addresses: lbzhang@semi.ac.cn

ISSN: 0953-8984

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Record 397 of 495

Title: Improving the optical absorption of BiFeO3 for photovoltaic applications via uniaxial compression or biaxial tension

Author(s): Dong, HF (Dong, Huafeng); Wu, ZG (Wu, Zhigang); Wang, SY (Wang, Shanying); Duan, WH

(Duan, Wenhui); Li, JB (Li, Jingbo)


10.1063/1.4793397 Published: FEB 18 2013



Abstract: First-principles computations are employed to investigate the electronic structures and optical absorption of rhombohedral BiFeO3 under uniaxial compression and biaxial tension. We find that the bandgap of BiFeO3 is reduced under uniaxial compression, and it can be tuned to the ideal value for photovoltaic applications; furthermore, the indirect-to-direct bandgap transition occurs, which would lead to much enhanced optical absorption near the band edge. Similar results are found for biaxial tensile strain. Strong optical absorption is critical to build efficient solar cells based on ferroelectric thin films; strain engineering is thus a practical route towards realizing this scheme, in which no junction is needed to separate charge carriers. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793397]

Addresses: [Dong, Huafeng; Wang, Shanying; Duan, Wenhui] Tsinghua Univ, Dept Phys, Beijing 100084,

Peoples R China.

[Dong, Huafeng; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,


[Wu, Zhigang] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA.


E-mail Addresses: zhiwu@mines.edu; jbli@semi.ac.cn

ISSN: 0003-6951

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Record 398 of 495

Title: Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field

Author(s): Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Liu, Y (Liu, Y.); Jiang, CY (Jiang, C. Y.); Ma, H (Ma,

H.); Zhu, LP (Zhu, L. P.); Qin, XD (Qin, X. D.)


10.1063/1.4793211 Published: FEB 18 2013



Abstract: The (001)-oriented P-I-N InGaAs/GaAs quantum wells (QWs) are studied by means of helicity dependent spin photocurrent. We have observed an unexpected circular dichroism effect along [001] direction in the QWs without an applied magnetic field. The circular polarization rate can be linearly tuned by the applied DC current flowing along [001] direction, and its value is enhanced more than one order in an InGaAs/GaAs vertical-cavity surface-emitting laser with distributed Bragg reflectors than that in a common InGaAs/GaAs QWs. This experiment indicates a type of spin-splitting in (001)-grown P-I-N

InGaAs/GaAs quantum wells induced by space inversion asymmetry introduced by residual strain which is previously overlooked. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793211]

Addresses: [Yu, J. L.; Chen, Y. H.; Liu, Y.; Jiang, C. Y.; Ma, H.; Zhu, L. P.; Qin, X. D.] Chinese Acad Sci,





ISSN: 0003-6951

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Record 399 of 495

Title: In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Author(s): Li, MF (Li, Mi-Feng); Yu, Y (Yu, Ying); He, JF (He, Ji-Fang); Wang, LJ (Wang, Li-Juan); Zhu, Y

(Zhu, Yan); Shang, XJ (Shang, Xiang-jun); Ni, HQ (Ni, Hai-Qiao); Niu, ZC (Niu, Zhi-Chuan)


10.1186/1556-276X-8-86 Published: FEB 18 2013



Abstract: A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two-to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.

Addresses: [Li, Mi-Feng; Yu, Ying; He, Ji-Fang; Wang, Li-Juan; Zhu, Yan; Shang, Xiang-jun; Ni, Hai-Qiao;

Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


Reprint Address: Li, MF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


E-mail Addresses: limifeng09@semi.ac.cn; zcniu@semi.ac.cn

ISSN: 1931-7573

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Record 400 of 495

Title: Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles

Author(s): Liu, K (Liu, Kong); Qu, SC (Qu, Shengchun); Zhang, XH (Zhang, Xinhui); Tan, FR (Tan, Furui);



10.1186/1556-276X-8-88 Published: FEB 18 2013



Abstract: Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture our hybrid cells. Both short-circuit current and external quantum efficiency measurements show an enhancement in optical absorption of organic layer, especially at lower wavelengths.

Addresses: [Liu, Kong; Qu, Shengchun; Tan, Furui; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond,


[Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing





ISSN: 1931-7573

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Record 401 of 495

Title: High-speed microwave photonic switch for millimeter-wave ultra-wideband signal generation

Author(s): Wang, LX (Wang, Li Xian); Li, W (Li, Wei); Zheng, JY (Zheng, Jian Yu); Wang, H (Wang, Hui);

Liu, JG (Liu, Jian Guo); Zhu, NH (Zhu, Ning Hua)

Source: OPTICS LETTERS Volume: 38 Issue: 4 Pages: 579-581 Published: FEB 15 2013



Abstract: We propose a scheme for generating millimeter-wave (MMW) ultra-wideband (UWB) signal that is free from low-frequency components and a residual local oscillator. The system consists of two cascaded polarization modulators and is equivalent to a high-speed microwave photonic switch, which truncates a sinusoidal MMW into short pulses. The polarity switchability of the generated MMW-UWB pulse is also demonstrated. (C) 2013 Optical Society of America

Addresses: [Wang, Li Xian; Li, Wei; Zheng, Jian Yu; Wang, Hui; Liu, Jian Guo; Zhu, Ning Hua] Chinese


Reprint Address: Wang, LX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: lxwang@semi.ac.cn

ISSN: 0146-9592

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Record 402 of 495

Title: Widely-Tunable and Background-Free Ultra-Wideband Signals Generation Utilizing Polarization

Modulation-Based Optical Switch

Author(s): Du, YX (Du, Yuanxin); Zheng, JY (Zheng, Jianyu); Wang, LX (Wang, Lixian); Wang, H (Wang,

Hui); Zhu, NH (Zhu, Ninghua); Liu, JG (Liu, Jianguo)


10.1109/LPT.2013.2238526 Published: FEB 15 2013



Abstract: A simple widely-tunable and background-free ultra-wideband (UWB) pulse shaper by utilizing the polarization modulation-based optical switch is proposed and demonstrated. By virtue of the excellent switch isolation and the complementarity between two inverted baseband signals output from the optical switch, the local oscillator leakage signal and the low frequency components of the obtained UWB signals are suppressed very well. The UWB pulse with center frequency up to 28 GHz is generated.

Addresses: [Du, Yuanxin; Zheng, Jianyu; Wang, Lixian; Wang, Hui; Zhu, Ninghua; Liu, Jianguo] Chinese


Reprint Address: Du, YX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: yxdu@semi.ac.cn; jyzheng@semi.ac.cn; lxwang@semi.ac.cn; whui@semi.ac.cn; nhzhu@semi.ac.cn; jgliu@semi.ac.cn

ISSN: 1041-1135

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Record 403 of 495

Title: Synthesis of Novel Acceptor Molecules of Mono- and Multiadduct Fullerene Derivatives for

Improving Photovoltaic Performance

Author(s): Liu, C (Liu, Chao); Xu, L (Xu, Liang); Chi, D (Chi, Dan); Li, YJ (Li, Yongjun); Liu, HB (Liu,

Huibiao); Wang, JZ (Wang, Jizheng)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 5 Issue: 3 Pages: 1061-1069 DOI:

10.1021/am3028475 Published: FEB 13 2013



Abstract: We have successfully synthesized and separated a series of tert-butyl 4-C-61-benzoate (t-BCB) organofullerenes, including monoadduct, diadduct, and triadduct compounds, and investigated their photophysics, electrochemistry, thermal properties, and high-performance liquid chromatography analysis. The photovoltaic devices were fabricated based on monoadduct, diadduct, and triadduct products, and the devices based on them exhibited power conversion efficiencies of 2.43%, 0.48%, and

1.68%, respectively. This was the first time to study the dependent relationship on the device performance and the different isomer numbers.

Addresses: [Liu, Chao; Xu, Liang; Chi, Dan; Li, Yongjun; Liu, Huibiao; Wang, Jizheng] Chinese Acad Sci,

Inst Chem, CAS Key Lab Organ Solids, BNLMS, Beijing 100190, Peoples R China.

[Liu, Chao; Xu, Liang] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Chi, Dan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

Reprint Address: Liu, HB (reprint author), Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids,

BNLMS, Beijing 100190, Peoples R China.

E-mail Addresses: liuhb@iccas.ac.cn

ISSN: 1944-8244

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Record 404 of 495

Title: Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching

Author(s): Ma, J (Ma, Jun); Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Yuan, GD (Yuan,

Guodong); Ji, XL (Ji, Xiaoli); Ma, P (Ma, Ping); Wang, JX (Wang, Junxi); Yi, XY (Yi, Xiaoyan); Wang, GH

(Wang, Guohong); Li, JM (Li, Jinmin)

Source: OPTICS EXPRESS Volume: 21 Issue: 3 Pages: 3547-3556 Published: FEB 11 2013



Abstract: In this work, we reported the fabrication of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs) by N-polar wet etching. The performance of HPA V-LEDs devices was significantly improved with 30% higher internal quantum efficiency compared with conventional roughened broad area V-LEDs. The simulated extraction efficiency by finite difference time domain method was 20% higher than typical roughened V-LEDs. The reversed leakage current of HPA

V-LEDs was reduced due to better crystal quality, which was confirmed by conductive atomic force microscopy measurement. Furthermore, the efficiency droop for HPA V-LEDs were substantially alleviated. (C) 2013 Optical Society of America

Addresses: [Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yuan, Guodong; Ji, Xiaoli; Ma, Ping; Wang, Junxi;

Yi, Xiaoyan; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond

Lighting, Beijing 100083, Peoples R China.

Reprint Address: Ma, J (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond


E-mail Addresses: spring@semi.ac.cn

ISSN: 1094-4087

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Record 405 of 495

Title: Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

Author(s): Wang, C (Wang, C.); Qu, HJ (Qu, H. J.); Chen, WX (Chen, W. X.); Ran, GZ (Ran, G. Z.); Yu,

HY (Yu, H. Y.); Niu, B (Niu, B.); Pan, JQ (Pan, J. Q.); Wang, W (Wang, W.)


10.1063/1.4792508 Published: FEB 11 2013



Abstract: Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics.

Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect. (C) 2013 American Institute of Physics.

[http://dx.doi.org/10.1063/1.4792508]

Addresses: [Wang, C.; Qu, H. J.; Chen, W. X.; Ran, G. Z.] Peking Univ, State Key Lab Mesoscop Phys,


[Wang, C.; Qu, H. J.; Chen, W. X.; Ran, G. Z.] Peking Univ, Sch Phys, Beijing 100871, Peoples R China.

[Yu, H. Y.; Niu, B.; Pan, J. Q.; Wang, W.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond & Mat Sci,


Reprint Address: Wang, C (reprint author), Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871,

Peoples R China.

E-mail Addresses: rangz@pku.edu.cn; jqpan@semi.ac.cn

ISSN: 0003-6951

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Record 406 of 495

Title: Robust 3-component optical fiber accelerometer for seismic monitoring

Author(s): Jiang, DS (Jiang, Dongshan); Zhaug, FX (Zhaug, Faxiang); Zhang, WT (Zhang, Wentao); Li, F

(Li, Feng); Li, F (Li, Fang)


10.3788/COL201311.020602 Published: FEB 10 2013



Abstract: A robust cantilever-based push pull 3-component (3-C) optical fiber accelerometer is proposed and experimentally demonstrated. Sensitivity and resonance frequency can be enhanced simultaneously by increasing the number of turns of an optical fiber without increasing the accelerometer size at the mass of a certain value. The calibration results show that axis sensitivity is 45 dB (re: 0 dB = 1 rad/g), with a fluctuation less than 0.9 dB in a frequency bandwidth of 10-450 Hz. The cross sensitivity is approximately 15 dB, with a fluctuation less than 1.2 dB in a frequency bandwidth of 10-450 Hz. The crosstalk reaches up to 30 dB. Fluctuation of the responses of the acceleration sensitivity of different components is less than 0.7 dB over a frequency bandwidth of 10 -450 Hz, which proves the good consistency of the 3-C optical fiber accelerometer. By usingan all-metal structure is expected to improve the reliability of the designed accelerometer for long-term use in harsh environments. These desirable features show that the proposed 3-C optical fiber accelerometer is satisfactory for seismic wave monitoringin oil and gas exploration.

Addresses: [Jiang, Dongshan; Zhaug, Faxiang; Zhang, Wentao; Li, Feng; Li, Fang] Chinese Acad Sci,

Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Zhang, WT (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,



ISSN: 1671-7694

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Record 407 of 495

Title: Ultra-compact and fabrication-tolerant polarization rotator based on a bend asymmetric-slab waveguide

Author(s): Cao, TT (Cao, Tongtong); Chen, SW (Chen, Shaowu); Fei, YH (Fei, Yonghao); Zhang, LB

(Zhang, Libin); Xu, QY (Xu, Qing-Yang)

Source: APPLIED OPTICS Volume: 52 Issue: 5 Pages: 990-996 Published: FEB 10 2013



Abstract: We propose and analyze a polarization rotator based on a bend asymmetric-slab waveguide on the silicon-on-insulator platform. The device can be fabricated using standard complementary metal-oxide-semiconductor process involving only two dry etching steps. Compared with the formerly reported polarization rotators based on two-step etching, our introduced device demonstrates a significant improvement for fabrication tolerance. Furthermore, an ultra compact structure of similar to 5 mu m conversion length, an insertion loss of only 0.5 dB, and an extinction ratio of >40 dB for both TE to

TM polarization conversion and TM to TE polarization conversion are exhibited. Operation wavelength and the influence of environmental temperature on our device are also discussed. (C) 2013 Optical

Society of America

Addresses: [Cao, Tongtong; Chen, Shaowu; Fei, Yonghao; Zhang, Libin; Xu, Qing-Yang] Chinese Acad

Sci, Inst Semicond, State Key Lab Optoelect, Beijing 100083, Peoples R China.




ISSN: 1559-128X

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Record 408 of 495

Title: Temperature dependence of anisotropic mode splitting induced by birefringence in an

InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference

spectroscopy

Author(s): Yu, JL (Yu, Jinling); Chen, YH (Chen, Yonghai); Cheng, SY (Cheng, Shuying); Lai, YF (Lai,

Yunfeng)

Source: APPLIED OPTICS Volume: 52 Issue: 5 Pages: 1035-1040 Published: FEB 10 2013



Abstract: The temperature dependence of the mode splitting induced by birefringence in an

InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser has been studied by reflectance difference spectroscopy at different temperatures ranging from 80 to 330 K. The anisotropic broadening width and the anisotropic integrated area of the cavity mode under different temperatures are also determined. The relation between the mode splitting and the birefringence is obtained by theoretical calculation using a

Jones matrix approach. The temperature dependence of the energy position of the cavity mode and the quantum well transition are also determined by nearly normal reflectance and photoluminescence, respectively. (C) 2013 Optical Society of America

Addresses: [Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou


[Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Fuzhou


[Chen, Yonghai] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples

R China.

Reprint Address: Yu, JL (reprint author), Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian

Province, Peoples R China.


ISSN: 1559-128X

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Record 409 of 495

Title: Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar

Author(s): Cheng, F (Cheng, Fang); Lin, LZ (Lin, L. Z.); Zhang, LB (Zhang, L. B.); Zhou, GH (Zhou,

Guanghui)


10.1063/1.4790325 Published: FEB 7 2013



Abstract: We demonstrate theoretically electrical switching of the edge state transport via a transverse electric field in a quantum spin Hall bar. By tuning the electric fields, the Fermi energy and the gate voltage, the edge channels in the both topological insulator (TI)/band insulator (BI) and TI/TI p-n junctions can be transited from opaque to transparent. This electrical switching behavior offers us an efficient way to control the topological edge state transport which is robust against the local perturbation. (C) 2013


Addresses: [Cheng, Fang] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004,


[Cheng, Fang; Lin, L. Z.] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, L. B.; Zhou, Guanghui] Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R

China.

[Zhang, L. B.; Zhou, Guanghui] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Manipulat,

Changsha 410081, Hunan, Peoples R China.

Reprint Address: Cheng, F (reprint author), Changsha Univ Sci & Technol, Dept Phys & Elect Sci,

Changsha 410004, Hunan, Peoples R China.

ISSN: 0021-8979

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Record 410 of 495

Title: Electrical transport properties of boron-doped single-walled carbon nanotubes

Author(s): Li, YF (Li, Y. F.); Wang, Y (Wang, Y.); Chen, SM (Chen, S. M.); Wang, HF (Wang, H. F.);

Kaneko, T (Kaneko, T.); Hatakeyama, R (Hatakeyama, R.)


10.1063/1.4790505 Published: FEB 7 2013



Abstract: The transport properties of B-doped single-walled carbon nanotubes (SWNTs) are studied from both experimental and theoretical standpoints. Experimentally, it is found that the semiconducting behavior of SWNTs is drastically changed after B-doping, and the unusual abrupt current drops are observed at low temperatures, which may imply the possibility of superconducting transition in B-doped

SWNTs. Using the density-functional tight-binding calculation, it is observed that B-doping induces the presence of density of state peaks near the Fermi level which shifts toward the valence band region, showing a clear charge-transfer characteristic, which agrees well with the experimental observations. (C)

2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790505]

Addresses: [Li, Y. F.] China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249, Changping,

Peoples R China.

[Li, Y. F.; Kaneko, T.; Hatakeyama, R.] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan.

[Wang, Y.] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat,


[Chen, S. M.] Chinese Acad Sci, Inst Proc Engn, Beijing 100190, Peoples R China.

[Wang, H. F.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Li, YF (reprint author), China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249,

Changping, Peoples R China.

E-mail Addresses: liyongfeng2004@yahoo.com.cn

ISSN: 0021-8979

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Record 411 of 495

Title: Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1

1)-oriented vanadium dioxide films grown by magnetron sputtering

Author(s): Yu, Q (Yu, Qian); Li, WW (Li, Wenwu); Liang, JR (Liang, Jiran); Duan, ZH (Duan, Zhihua); Hu,

ZG (Hu, Zhigao); Liu, J (Liu, Jian); Chen, HD (Chen, Hongda); Chu, JH (Chu, Junhao)


055310 DOI: 10.1088/0022-3727/46/5/055310 Published: FEB 6 2013



Abstract: The metal-insulator transition behaviour of vanadium dioxide (VO2) films grown at different oxygen pressures is investigated. With the aid of temperature-dependent electrical and infrared transmittance experiments, it is found that the transition temperature in the heating process goes up with increasing argon-oxygen ratio, whereas the one in the cooling process shows an inverse variation trend.

It is found that the hysteresis width of the phase transition is narrowed at a lower argon-oxygen ratio because the defects introduced by excess oxygen lower the energy requirement of transformation.

Furthermore, the defects reduce the forbidden gap of the VO2 system due to the generation of a V5+ ion.

The present results are valuable for the achievement of VO2-based optoelectronic devices.

Addresses: [Yu, Qian; Li, Wenwu; Duan, Zhihua; Hu, Zhigao; Chu, Junhao] E China Normal Univ, Key

Lab Polar Mat & Devices, Minist Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.

[Liang, Jiran; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,


[Liu, Jian] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,

Peoples R China.

[Liang, Jiran] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China.

Reprint Address: Hu, ZG (reprint author), E China Normal Univ, Key Lab Polar Mat & Devices, Minist

Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.

E-mail Addresses: zghu@ee.ecnu.edu.cn

ISSN: 0022-3727

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Record 412 of 495

Title: Scattering due to large cluster embedded in quantum wells

Author(s): Liu, CB (Liu, Changbo); Zhao, GJ (Zhao, Guijuan); Liu, GP (Liu, Guipeng); Song, YF (Song,

Yafeng); Zhang, H (Zhang, Heng); Jin, DD (Jin, Dongdong); Li, ZW (Li, Zhiwei); Liu, XL (Liu, Xianglin);

Yang, SY (Yang, Shaoyan); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo)


10.1063/1.4782218 Published: FEB 4 2013



Abstract: Two dimensional electron gas mobility limited by the scattering of large cluster is studied. From this study, we find that the scattering caused by conduction band offset between host well and multiple mini-quantum well (mini-QW) series aligned along the QW channel, i.e., quantum pits, can be treated as a variable in our calculation. The results show that the mobility increases with increasing barrier height, which is opposite to the well-known interface roughness scattering mobility. To make the calculation simple, the InxGa1-xN/InyGa1-yN QW double-heterostructure is selected to along (11 (2) over bar0) non-polarized direction, along which the barrier and well are both flat. (C) 2013 American Institute of


Addresses: [Liu, Changbo; Zhao, Guijuan; Liu, Guipeng; Song, Yafeng; Zhang, Heng; Jin, Dongdong; Li,

Zhiwei; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond,


Reprint Address: Liu, CB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: liuchb@semi.ac.cn; qszhu@semi.ac.cn

ISSN: 0003-6951

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Record 413 of 495

Title: Ultrathin Terahertz Planar Elements

Author(s): Hu, D (Hu, Dan); Wang, XK (Wang, Xinke); Feng, SF (Feng, Shengfei); Ye, JS (Ye, Jiasheng);

Sun, WF (Sun, Wenfeng); Kan, Q (Kan, Qiang); Klar, PJ (Klar, Peter J.); Zhang, Y (Zhang, Yan)

Source: ADVANCED OPTICAL MATERIALS Volume: 1 Issue: 2 Pages: 186-191 DOI:

10.1002/adom.201200044 Published: FEB 2013



Abstract: Various ultrathin planar optical elements, including cylindrical lens, spherical lens, and phase holograms, are designed based on the interface phase modulation of antenna resonances in the terahertz (THz) range. The focusing and imaging performance of the lenses and image-reconstruction ability of the pure phase holograms are demonstrated experimentally. In contrast to conventional bulky optical elements where curve surfaces are used to control the light propagation, the manipulations of light propagation for these thin planar optical elements are achieved through designed arrays of complementary V-shaped antennas in the planar gold films with a thickness of 100 nm (1/4000th of the wavelength of the illuminating light). The adoption of the complementary V-shaped antennas makes the optical elements have double functions: light propagation manipulation and filtering, which improves the performance of the optical elements by blocking the disturbance from the direct transmission. This research is a significant step towards the reduction of the THz elements size and, therefore, to the development of micro-integrated THz systems and to other applications where the compaction is necessary. The approach used here can be expanded to multifarious optical elements in different wave bands.

Addresses: [Hu, Dan; Wang, Xinke; Feng, Shengfei; Ye, Jiasheng; Sun, Wenfeng; Zhang, Yan] Capital

Normal Univ, Dept Phys, Beijing Key Lab Terahertz Spect & Imaging, Beijing 100048, Peoples R China.

[Hu, Dan; Wang, Xinke; Feng, Shengfei; Ye, Jiasheng; Sun, Wenfeng; Zhang, Yan] Minist Educ, Key Lab

Terahertz Optoelect, Beijing 100048, Peoples R China.

[Hu, Dan; Zhang, Yan] Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China.

[Kan, Qiang] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083,

Peoples R China.

[Klar, Peter J.] Univ Giessen, Inst Expt Phys 1, D-35392 Giessen, Germany.

Reprint Address: Zhang, Y (reprint author), Capital Normal Univ, Dept Phys, Beijing Key Lab Terahertz

Spect & Imaging, Beijing 100048, Peoples R China.

E-mail Addresses: yzhang@mail.cnu.edu.cn

ISSN: 2195-1071

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Record 414 of 495

Title: Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs

Author(s): Zhang, YB (Zhang, Yanbo); Du, YD (Du, Yandong); Chen, YK (Chen, Yankun); Li, XM (Li,

Xiaoming); Yang, X (Yang, Xiang); Han, WH (Han, Weihua); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 13 Issue: 2 Pages:

804-807 DOI: 10.1166/jnn.2013.6074 Published: FEB 2013



Abstract: In this work, accumulation-mode (AM) p-channel wrap-gated FinFETs and AM p-channel planar

FETs are fabricated using top-down strategies, and compared in performance at temperatures from 6 K to 295 K. The threshold voltage variation of the AM wrap-gated FinFET is slightly larger than that of the

AM planar FET. The drain current and the peak transconductance in the AM wrap-gated FinFET are larger than those in the AM planar FET, and those differences are temperature dependent. We attribute those to the body current enhancement in the AM wrap-gated FinFET as temperature increases. The subthreshold swings (SS) of both types of the FETs improve with temperature decreasing and get lower than 10 mV/dec at 6 K. The higher SS in the AM wrap-gated FinFET is likely due to a high interface state density at the fin sidewalls arising from the fin patterning induced defects.

Addresses: [Zhang, Yanbo; Du, Yandong; Chen, Yankun; Li, Xiaoming; Yang, Xiang; Han, Weihua; Yang,

Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083,

Peoples R China.

[Zhang, Yanbo] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.

[Yang, Fuhua] State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Han, WH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


ISSN: 1533-4880

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Record 415 of 495

Title: Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates

Author(s): Gong, H (Gong, Hua); Chen, PX (Chen, Peixuan); Ma, YJ (Ma, Yingjie); Wang, LJ (Wang,

Lijun); Rastelli, A (Rastelli, Armando); Schmidt, OG (Schmidt, Oliver G.); Zhong, ZY (Zhong, Zhenyang)





Abstract: A multilayer of GeSi nanowires separated with Si spacers was readily self-assembled on miscut

Si (001) substrates with 8 degrees off toward < 110 >. The nanowires oriented along the miscut direction were very small and compactly arranged on the vicinal surface. Systematic photoluminescence (PL) spectroscopy studies were carried out on the GeSi nanowires. With increasing excitation power, a sublinear power dependent PL intensity and a blue-shift of similar to 7 meV/decade with nearly constant full width of half maximum (FWHM) of PL peaks from multilayer GeSi nanowires was observed. These results indicated a typical type-II band alignment of GeSi nanowires/Si. The blue-shift was attributed to band bending effect with the increase of photon-generated carriers. The nearly independent FWHM of PL peaks with the excitation power was explained in terms of the formation of mini-band due to strong coupling of holes in closely neighboring nanowires. An activation energy of similar to 12 meV was extracted from the temperature-dependent intensity of PL peaks of the nanowires, which was assigned to be the exciton binding energy around the nanowires. Based on Raman spectra, the Ge content in GeSi nanowires was estimated to be similar to 61%.

Addresses: [Gong, Hua; Ma, Yingjie; Zhong, Zhenyang] Fudan Univ, State Key Lab Surface Phys,

Shanghai 200433, Peoples R China.

[Gong, Hua; Ma, Yingjie; Zhong, Zhenyang] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.

[Chen, Peixuan; Rastelli, Armando; Schmidt, Oliver G.] IFW Dresden, Inst Integrat Nanosci, D-01069

Dresden, Germany.

[Wang, Lijun] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhong, ZY (reprint author), Fudan Univ, State Key Lab Surface Phys, Shanghai 200433,

Peoples R China.

ISSN: 1533-4880

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Record 416 of 495

Title: Polystyrene-Microsphere-Assisted Patterning of ZnO Nanostructures: Growth and Characterization

Author(s): Dong, JJ (Dong, J. J.); Zhang, XW (Zhang, X. W.); Zhang, SG (Zhang, S. G.); Tan, HR (Tan, H.

R.); Yin, ZG (Yin, Z. G.); Gao, Y (Gao, Y.); Wang, JX (Wang, J. X.)





Abstract: In this work, periodic arrays of various ZnO nanostructures were fabricated on both Si and GaN substrates via a facile hydrothermal process. To realize the site-specific growth, two kinds of masks were introduced. The polystyrene (PS) microsphere self-assembled monolayer (SAM) was employed as the mask to create a patterned seed layer to guide the growth of ZnO nanostructures. However, the resulting

ZnO nanostructures are non-equidistant, and the diameter of the ZnO nanostructures is uncontrollable.

As an alternative, TiO2 sol was used to replicate the PS microsphere SAM, and the inverted SAM (ISAM) mask was obtained by extracting the PS microspheres with toluene. By using the ISAM mask, the hexagonal periodic array of ZnO nanostructures with high uniformity were readily produced. Furthermore, the effect of the underlying substrates on the morphology of ZnO nanostructures has been investigated.

It is found that the highly ordered and vertically aligned ZnO nanorods epitaxially grow on the GaN substrate, while the ZnO nanoflowers on Si substrates are random oriented.

Addresses: [Dong, J. J.; Zhang, X. W.; Zhang, S. G.; Tan, H. R.; Yin, Z. G.; Gao, Y.] Chinese Acad Sci,


[Wang, J. X.] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol R&D Ctr, Beijing 100083,

Peoples R China.



ISSN: 1533-4880

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Record 417 of 495

Title: Optical transition of the charged excitons in InAs single quantum dots

Author(s): Li, WS (Li Wen-Sheng); Sun, BQ (Sun Bao-Quan)


10.7498/aps.62.047801 Published: FEB 2013



Abstract: Quantum dot (QD) samples studied in the experiment are grown by molecular-beam epitaxy on semi-insulating GaAs substrates. The photoluminescences (PLs) of the excitons in a single QD are measured at 5 K. The PL spectra of the excitons, biexcitons and charged excitons are identified by measuring and analyzing both PL peaks of the circular and linear polarization and power-dependent PL properties. The charged exciton emissions can be tuned by applying a bias voltage, i.e., negatively charged excitons are changed into positively charged excitons by changing the voltage from 1.0 to -1.0 V.

It is shown that the electron-spin will slowly relax compared with that of the hole when they relax from wetting layer into the QD.

Addresses: [Li Wen-Sheng] Tongliao Profess Educ Coll, Coll Chem Engn, Tongliao 028000, Peoples R

China.

[Sun Bao-Quan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


Reprint Address: Sun, BQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: bqsun@semi.ac.cn

ISSN: 1000-3290

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Record 418 of 495

Title: Highly nonlinear property and threshold voltage of Sc2O3 doped ZnO-Bi2O3-based varistor ceramics

Author(s): Xu, D (Xu Dong); Wu, JT (Wu Jieting); Jiao, L (Jiao Lei); Xu, HX (Xu Hongxing); Zhang, PM

(Zhang Peimei); Yu, RH (Yu Renhong); Cheng, XN (Cheng Xiaonong)

Source: JOURNAL OF RARE EARTHS Volume: 31 Issue: 2 Pages: 158-163 DOI:

10.1016/S1002-0721(12)60251-8 Published: FEB 2013



Abstract: A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150 degrees C. X-ray diffractometry (XRD) and scanning electron microscopy (SEM) were applied to characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and V-I characteristics. The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased. The best electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3-based ceramics sintered at 1000 degrees C, which exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of 0.16 mu A.

Addresses: [Xu Dong; Wu Jieting; Jiao Lei; Xu Hongxing; Zhang Peimei; Yu Renhong; Cheng Xiaonong]

Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China.

[Xu Dong] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

[Xu Dong] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples

R China.

[Xu Dong] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu


[Xu Dong] Jiangsu Univ, Changzhou Engn Res Inst, Changzhou 213000, Peoples R China.

[Zhang Peimei; Yu Renhong] Changzhou Ming Errui Ceram Co Ltd, Changzhou 213102, Peoples R

China.

Reprint Address: Xu, D (reprint author), Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R

China.

E-mail Addresses: frank@ujs.edu.cn

ISSN: 1002-0721

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Record 419 of 495

Title: Radial n-i-p structure silicon nanowire-based solar cells on flexible stainless steel substrates

Author(s): Xie, XB (Xie, Xiaobing); Zeng, XB (Zeng, Xiangbo); Yang, P (Yang, Ping); Li, H (Li, Hao); Li, JY

(Li, Jingyan); Zhang, XD (Zhang, Xiaodong); Wang, QM (Wang, Qiming)

Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Volume: 210

Issue: 2 Pages: 341-344 DOI: 10.1002/pssa.201228595 Published: FEB 2013



Abstract: Radial n-i-p structure silicon nanowires-(SiNWs) based solar cells on flexible stainless steel substrates have been fabricated by plasma-enhanced chemical vapor deposition (PECVD). The highest open-circuit voltage (V-oc) and short-circuit current density (J(sc)) for AM 1.5 illumination were 0.62 V and 13.36 mA cm(-2), respectively, at a maximum power conversion efficiency of 3.56%. The optical reflectance of the SiNWs solar cells over a broad rang of wavelengths (300-1000 nm) is reduced by similar to 80% in average compared to planar silicon thin film cells. The external quantum efficiency

(EQE) measurements show that the EQE response of SiNWs solar cells is improved greatly in the wavelength range of 550-750 nm compared to corresponding planar silicon thin film solar cells. (C) 2012

WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Addresses: [Xie, Xiaobing; Zeng, Xiangbo; Yang, Ping; Li, Hao; Li, Jingyan; Zhang, Xiaodong; Wang,

Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples

R China.

Reprint Address: Xie, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xbxie@semi.ac.cn

ISSN: 1862-6300

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Record 420 of 495

Title: Vertical cavity surface emitting laser transverse mode and polarization control by elliptical hole photonic crystal

Author(s): Cao, T (Cao Tian); Xu, C (Xu Chen); Xie, YY (Xie Yi-Yang); Kan, Q (Kan Qiang); Wei, SM (Wei

Si-Min); Mao, MM (Mao Ming-Ming); Chen, HD (Chen Hong-Da)


10.1088/1674-1056/22/2/024205 Published: FEB 2013



Abstract: The polarization of traditional photonic crystal (PC) vertical cavity surface emitting laser

(VCSEL) is uncontrollable, resulting in the bit error increasing easily. Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently. We analyze the far field divergence angle, and birefringence of elliptical hole PC VCSEL. When the ratio of minor axis to major axis b/a = 0.7, the PC VCSEL can obtain single mode and polarization. According to the simulation results, we fabricate the device successfully. The output power is 1.7 mW, the far field divergence angle is less than 10 degrees, and the side mode suppression ratio is over 30 dB. The output power in the Y direction is 20 times that in the X direction.

Addresses: [Cao Tian; Xu Chen; Xie Yi-Yang; Wei Si-Min; Mao Ming-Ming] Beijing Univ Technol, Key Lab

Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China.

[Xie Yi-Yang; Kan Qiang; Chen Hong-Da] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


Reprint Address: Xu, C (reprint author), Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ,


E-mail Addresses: xuchen58@bjut.edu.cn

ISSN: 1674-1056

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Record 421 of 495

Title: 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers

Author(s): Ji, L (Ji Lian); Lu, SL (Lu Shu-Long); Jiang, DS (Jiang De-Sheng); Zhao, YM (Zhao Yong-Ming);

Tan, M (Tan Ming); Zhu, YQ (Zhu Ya-Qi); Dong, JR (Dong Jian-Rong)


10.1088/1674-1056/22/2/026802 Published: FEB 2013



Abstract: Single-junction, lattice-mismatched In0.69Ga0.31As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition

(MOCVD). Compositionally undulating step-graded InAsyP1-y buffer layers with a lattice mismatch of similar to 1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm(2), which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).

Addresses: [Ji Lian; Lu Shu-Long; Zhao Yong-Ming; Tan Ming; Zhu Ya-Qi; Dong Jian-Rong] Chinese

Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215125,

Peoples R China.

[Jiang De-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Lu, SL (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab


E-mail Addresses: sllu2008@sinano.ac.cn

ISSN: 1674-1056

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Record 422 of 495

Title: Annealing effect on magnetic anisotropy in ultrathin (Ga, Mn)As

Author(s): Li, YY (Li Yan-Yong); Wang, HF (Wang Hua-Feng); Cao, YF (Cao Yu-Fei); Wang, KY (Wang

Kai-You)


10.1088/1674-1056/22/2/027504 Published: FEB 2013



Abstract: We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance (PHR).

Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields (below 1000 Gs, 1 Gs = 10(-4) T), which can be explained by competition between Zeeman energy and magnetic anisotropic energy. It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one. The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing. This gives a useful way to tune the magnetic anisotropy of ultrathin (Ga,Mn)As devices.

Addresses: [Li Yan-Yong; Wang Hua-Feng; Cao Yu-Fei; Wang Kai-You] Chinese Acad Sci, Inst Semicond,


Reprint Address: Wang, KY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab



ISSN: 1674-1056

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Record 423 of 495

Title: The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells

Author(s): Li, L (Li Liang); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu

Zong-Shun); Chen, P (Chen Ping); Wu, LL (Wu Liang-Liang); Le, LC (Le Ling-Cong); Wang, H (Wang

Hui); Yang, H (Yang Hui)


10.1088/0256-307X/30/2/028801 Published: FEB 2013



Abstract: An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature (LT) GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition. The effects of the LT GaN interlayer on the performance of the

InGaN/GaN solar cells are investigated. It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer, ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.

Addresses: [Li Liang; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Wu Liang-Liang; Le

Ling-Cong; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


[Wang Hui; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R

China.



E-mail Addresses: dgzhao@semi.ac.cn

ISSN: 0256-307X

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Record 424 of 495

Title: Two New Methods to Improve the Lithography Precision for SU-8 Photoresist on Glass Substrate

Author(s): Mao, X (Mao, Xu); Yang, JL (Yang, Jinling); Ji, A (Ji, An); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS Volume: 22 Issue: 1 Pages:

124-130 DOI: 10.1109/JMEMS.2012.2219295 Published: FEB 2013



Abstract: This paper introduces two novel approaches to effectively eliminate the influence of scattering light from the wafer chuck and enhance the lithography precision of SU-8 photoresist on glass substrate.

The first method is based on the fact that Si wafer can partially reflect ultraviolet (UV) light, and the second one employs materials that have low optical transparency and can achieve complete absorption of the near-UV light penetrating through the SU-8 photoresist and the glass substrate. The SU-8 structures produced by these two methods have much better profiles than those fabricated by the conventional process, and the linewidth deviation is smaller than 1 mu m. The two routines have advantages of simplicity and low cost, therefore are applicable to batch fabrication, and can significantly enhance the performance of microelectromechanical systems devices. These two methods were adopted to perform SU-8-based low-temperature bonding at wafer level and with high precision. The bonding shear strengths reach 2-26 MPa when the bonding temperature varied from 60 degrees C to 140 degrees C.

Addresses: [Mao, Xu; Yang, Jinling; Ji, An] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

[Mao, Xu; Yang, Jinling; Ji, An; Yang, Fuhua] State Key Lab Transducer Technol, Shanghai 200050,

Peoples R China.

Reprint Address: Mao, X (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: maoxu@semi.ac.cn; jlyang@semi.ac.cn; jian@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 1057-7157

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Record 425 of 495

Title: Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure

Author(s): Yu, GH (Yu, Guohao); Wang, Y (Wang, Yue); Cai, Y (Cai, Yong); Dong, ZH (Dong, Zhihua);

Zeng, CH (Zeng, Chunhong); Zhang, BS (Zhang, Baoshun)


10.1109/LED.2012.2235405 Published: FEB 2013



Abstract: Anovel double-gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent regions of a normal gate, was proposed and fabricated for the first time to compare the dynamic characteristics of AlGaN/GaN HEMTs with a source field plate (SFP) and a gate field plate (GFP). During the dynamic characterization, the device was configured in two operation modes: One is the SFP mode with the top gate biased at 0 V, and the other is the GFP mode applying the gate pulse signal on the top gate at the same time. Compared with an AlGaN/GaN HEMT without field plates, both GFP and SFP much improve the dynamic performances. Compared with the SFP, the GFP shows better dynamic performances with a similar to 34% reduction of switch-on delay time and similar to 6% reduction of dynamic ON-state resistance. Studying the dynamic characteristics and applying negative voltage on the top gate during the OFF state, the mechanism differences between the GFP and the SFP are discussed in detail.

Addresses: [Yu, Guohao; Wang, Yue; Cai, Yong; Dong, Zhihua; Zeng, Chunhong; Zhang, Baoshun]

Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123,

Peoples R China.

[Yu, Guohao; Wang, Yue] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Yu, Guohao] Chinese Acad Sci, Inst Semicond, Beijing 10008, Peoples R China.

Reprint Address: Yu, GH (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab



ISSN: 0741-3106

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Record 426 of 495

Title: CMOS-Compatible Vertical Grating Coupler With Quasi Mach-Zehnder Characteristics

Author(s): Zhang, ZY (Zhang, Zanyun); Zhang, Z (Zhang, Zan); Huang, BJ (Huang, Beiju); Cheng, CT



10.1109/LPT.2012.2234099 Published: FEB 1 2013



Abstract: A vertical grating coupler on silicon-on-insulator substrates has been designed and demonstrated. The light from a vertical fiber can be coupled in and split equally into two arms with the fiber placed in the grating center. An optical combiner is used to collect the transmission from the two arms. The measured peak coupling efficiency is 37%. Our device can also function like a Mach-Zehnder interferometer. In a device with an arm difference of 30 mu m, the normalized transmission spectra of

20-nm free spectral range and more than 12-dB extinction ratio at 1567 nm are obtained.

Addresses: [Zhang, Zanyun; Zhang, Zan; Huang, Beiju; Cheng, Chuantong; Chen, Hongda] Chinese

Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, ZY (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst


E-mail Addresses: zhangzanyun@semi.ac.cn; Zhangzan@semi.ac.cn; bjhuang@semi.ac.cn; chengchuantong@semi.ac.cn; hdchen@semi.ac.cn

ISSN: 1041-1135

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Record 427 of 495

Title: Various Correlations in a Two-Qubit Heisenberg XXZ Spin System Both in Thermal Equilibrium and

Under the Intrinsic Decoherence

Author(s): Cai, JT (Cai, Jiang-Tao); Abliz, A (Abliz, Ahmad); Li, SS (Li, Shu-Shen)

Source: INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS Volume: 52 Issue: 2 Pages:

576-588 DOI: 10.1007/s10773-012-1362-9 Published: FEB 2013



Abstract: In this paper we discuss various correlations measured by the concurrence (C), classical correlation (CC), quantum discord (QD), and geometric measure of discord (GMD) in a two-qubit

Heisenberg XXZ spin system in the presence of external magnetic field and Dzyaloshinskii-Moriya (DM) anisotropic antisymmetric interaction. Based on the analytically derived expressions for the correlations for the cases of thermal equilibrium and the inclusion of intrinsic decoherence, we discuss and compare the effects of various system parameters on the correlations in both cases. We also found that there is not a definite ordering of these quantities in thermal equilibrium, whereas there is a descending order of the CC, C, GMD and QD under the intrinsic decoherence with a nonnull B when the initial state is vertical bar Psi(2) (0)> = 1/root 2(vertical bar 00 > + vertical bar 11 >).

Addresses: [Cai, Jiang-Tao; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


[Abliz, Ahmad] Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054, Peoples R China.

Reprint Address: Cai, JT (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: jtcai@semi.ac.cn

ISSN: 0020-7748

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Record 428 of 495

Title: Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching

Author(s): Liu, K (Liu, Kong); Qu, SC (Qu, Shengchun); Zhang, XH (Zhang, Xinhui); Wang, ZG (Wang,

Zhanguo)

Source: JOURNAL OF MATERIALS SCIENCE Volume: 48 Issue: 4 Pages: 1755-1762 DOI:

10.1007/s10853-012-6936-7 Published: FEB 2013



Abstract: Low-cost fabrication methods enabling the morphological control of silicon nanowires are of great importance in many device application fields. A top-down fabrication method, metal-assisted chemical etching, is proved to be a feasible solution. In this paper, some novel approaches based on metal-assisted chemical etching, alkaline solution etching, and electrochemical anodic etching are presented for fabricating micro-and nano-structures, which reveal the anisotropic characteristics of metal-assisted chemical etching in silicon. A new model is proposed to explain the motility behavior of Ag particles in metal-assisted chemical etching of silicon. It is shown that Ag particle forms a self-electrophoresis unit and migrates into Si substrate along [100] direction independently. Diameter and

length control of silicon nanowires are achieved by varying Ag deposition and etching durations of metal-assisted chemical etching, respectively, which provide a facilitation to achieve high-aspect-ratio silicon nanowires at room temperature in a short period. These results show a potential simple method to microstructure silicon for devices application, such as solar cells and sensors.

Addresses: [Liu, Kong; Qu, Shengchun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab


[Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing




E-mail Addresses: liukong@semi.ac.cn; qsc@semi.ac.cn

ISSN: 0022-2461

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Record 429 of 495

Title: Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina mask

Author(s): Liu, W (Liu, Wen); Wang, XD (Wang, Xiaodong); Xu, R (Xu, Rui); Wang, XF (Wang, Xiaofeng);

Cheng, KF (Cheng, Kaifang); Ma, HL (Ma, Huili); Yang, FH (Yang, Fuhua); Li, JM (Li, Jinmin)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 16 Issue: 1 Pages:

160-164 DOI: 10.1016/j.mssp.2012.05.008 Published: FEB 2013



Abstract: With more and more attention given to the plasmonic nanostructures enhancing light trapping of solar cells, the fabrication of metal nanostructures becomes more and more important. In this work, we fabricated porous anodic alumina on SiO2/GaAs substrate and obtained periodic Ag nanodots with hemispherical shape by electron beam evaporation. During the experiments, it was found that the properties of barrier layers of porous anodic alumina fabricated on SiO2/GaAs and SiO2/Si substrates after pore-widening are different. The through-hole porous anodic alumina film on SiO2/GaAs substrate cannot be obtained after a long pore-widening process. The additional Ar ion bombardment against the samples was needed in our experiments to get the through-hole porous anodic alumina films on

SiO2/GaAs substrate. (C) 2012 Elsevier Ltd. All rights reserved.

Addresses: [Liu, Wen; Wang, Xiaodong; Xu, Rui; Wang, Xiaofeng; Cheng, Kaifang; Ma, Huili; Yang,

Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083,

Peoples R China.

[Yang, Fuhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


[Li, Jinmin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R

China.

Reprint Address: Wang, XD (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


E-mail Addresses: liuwen519@semi.ac.cn; xdwang@semi.ac.cn; xurui@semi.ac.cn; wangxiaofeng@semi.ac.cn; chengkaifang@semi.ac.cn; mahuili@semi.ac.cn; fhyang@semi.ac.cn; jmli@semi.ac.cn

ISSN: 1369-8001

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Record 430 of 495

Title: DESIGN OF NOVEL COMPOSITE BEAM SPLITTER WITH DIRECTIONAL COUPLERS AND

RING RESONATORS USING PHOTONIC CRYSTAL

Author(s): Liao, QH (Liao, Qinghua); Guo, H (Guo, Hao); Yu, TB (Yu, Tianbao); Huang, YZ (Huang,

Yongzhen)

Source: MODERN PHYSICS LETTERS B Volume: 27 Issue: 3 Article Number: 1350019 DOI:

10.1142/S021798491350019X Published: JAN 30 2013



Abstract: We propose and analyze a novel multiway high efficiency composite beam splitter based on propagation properties of the light waves in directional coupler (DC) and ring resonator. The spectral transmittance and splitting properties of the beam splitter have been numerically simulated and analyzed

using the plane wave expansion (PWE) method and finite difference time domain (FDTD) method. By simply adjusting the symmetrical coupling rods in the ring resonators, inducing the redistribution of the power of the optical field, equipartition or free distribution of the light field energy can be achieved. It was shown that the novel composite beam splitter has a large separating angle, a high beam transmittance, and high flexibility. Furthermore, this beam splitter can be easily extended to the structure with more light output channels. These features of the proposed composite beam splitter make it a promising candidate in optical communication applications.

Addresses: [Liao, Qinghua; Guo, Hao; Yu, Tianbao] Nanchang Univ, Dept Phys, Nanchang 330031,

Peoples R China.

[Huang, Yongzhen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing


Reprint Address: Liao, QH (reprint author), Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R

China.

E-mail Addresses: lqhua@ncu.edu.cn

ISSN: 0217-9849

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Record 431 of 495

Title: High-Q modes in defected microcircular resonator confined by metal layer for unidirectional emission

Author(s): Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Lin, JD (Lin, Jian-Dong); Lv, XM (Lv,

Xiao-Meng); Zou, LX (Zou, Ling-Xiu); Long, H (Long, Heng); Yang, YD (Yang, Yue-De); Xiao, JL (Xiao,

Jin-Long)

Source: OPTICS EXPRESS Volume: 21 Issue: 2 Pages: 2165-2170 Published: JAN 28 2013



Abstract: Defected circular resonators laterally confined by a metal layer with a flat side as an emitting window are numerically investigated based on the boundary element method for realizing unidirectional emission microlasers. The results indicate that Fabry-Perot (FP) modes become high Q confined modes in the defected circular resonator with a metallic layer. The mode coupling between the FP mode and chaotic-like mode can result in high Q confined mode for unidirectional emission with a narrow far field pattern. (C) 2013 Optical Society of America

Addresses: [Yao, Qi-Feng; Huang, Yong-Zhen; Lin, Jian-Dong; Lv, Xiao-Meng; Zou, Ling-Xiu; Long,

Heng; Yang, Yue-De; Xiao, Jin-Long] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


Reprint Address: Yao, QF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1094-4087

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Record 432 of 495

Title: High-harmonic and single attosecond pulse generation using plasmonic field enhancement in ordered arrays of gold nanoparticles with chirped laser pulses

Author(s): Yang, YY (Yang, Ying-Ying); Scrinzi, A (Scrinzi, Armin); Husakou, A (Husakou, Anton); Li, QG

(Li, Qian-Guang); Stebbings, SL (Stebbings, Sarah L.); Sussmann, F (Suessmann, Frederik); Yu, HJ (Yu,

Hai-Juan); Kim, S (Kim, Seungchul); Ruhl, E (Ruehl, Eckart); Herrmann, J (Herrmann, Joachim); Lin, XC

(Lin, Xue-Chun); Kling, MF (Kling, Matthias F.)




Abstract: Coherent XUV sources, which may operate at MHz repetition rate, could find applications in high-precision spectroscopy and for spatio-time-resolved measurements of collective electron dynamics on nanostructured surfaces. We theoretically investigate utilizing the enhanced plasmonic fields in an ordered array of gold nanoparticles for the generation of high-harmonic, extreme-ultraviolet (XUV) radiation. By optimization of the chirp of ultrashort laser pulses incident on the array, our simulations indicate a potential route towards the temporal shaping of the plasmonic near-field and, in turn, the generation of single attosecond pulses. The inherent effects of inhomogeneity of the local fields on the

high-harmonic generation are analyzed and discussed. While taking the inhomogeneity into account does not affect the optimal chirp for the generation of a single attosecond pulse, the cut-off energy of the high-harmonic spectrum is enhanced by about a factor of two. (C) 2013 Optical Society of America

Addresses: [Yang, Ying-Ying; Yu, Hai-Juan; Lin, Xue-Chun] Chinese Acad Sci, Inst Semicond, Lab Solid

State Laser Sources, Beijing 100083, Peoples R China.

[Scrinzi, Armin] Univ Munich, D-80333 Munich, Germany.

[Husakou, Anton; Herrmann, Joachim] Max Born Inst Nonlinear Opt & Short Pulse Spect, D-12489 Berlin,

Germany.

[Li, Qian-Guang] Univ Xiaogan, Hubei Engn Univ, Dept Phys, Xiaogan 432000, Peoples R China.

[Stebbings, Sarah L.; Suessmann, Frederik; Kling, Matthias F.] Max Planck Inst Quantum Opt, D-85748

Garching, Germany.

[Kim, Seungchul] POSTECH, Max Planck Ctr Attosecond Sci MPC AS, Pohang 790784, Kyungbuk,

South Korea.

[Ruehl, Eckart] Free Univ Berlin, Inst Chem & Biochem Phys & Theoret Chem, D-14195 Berlin, Germany.

[Kling, Matthias F.] Kansas State Univ, Dept Phys, JR Macdonald Lab, Manhattan, KS 66506 USA.

Reprint Address: Yang, YY (reprint author), Chinese Acad Sci, Inst Semicond, Lab Solid State Laser


E-mail Addresses: yangyy@semi.ac.cn; kling@phys.ksu.edu

ISSN: 1094-4087

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Record 433 of 495

Title: Electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice

Author(s): Lang, XL (Lang, Xiao-Li); Xia, JB (Xia, Jian-Bai)


10.1063/1.4780704 Published: JAN 28 2013



Abstract: The electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice

(M-structure) are investigated in the framework of eight-band effective-mass theory, with the interface potential considered. The calculated energy gaps agree excellently with the experimental results. Via calculations, we find that the electronic structure of M-structure strongly depends on the geometrical structure of superlattice. The electron effective mass increases notably with the thickness of GaSb and

AlSb layers, and AlSb layer is more favorable to obtain large electron effective mass than GaSb layer.

Increased thickness of AlSb layer also leads to larger variation range of valence band maximum (VBM) and so M-structure has more tunable VBM than InAs/GaSb superlattice. Also the VBM of M-structure rises considerably with the increment of GaSb layer thickness and is almost independent of InAs layer thickness. We further find that M-structure has no remarkable superior optical absorption coefficient over

InAs/GaSb superlattice. However, with larger electron effective mass and more tunable valence band maximum compared with InAs/GaSb superlattice, M-structure can be used as barrier in InAs/GaSb superlattice infrared detector to reduce the dark current. And the quantum efficiency of infrared photodiodes will not depend on the bias voltage when the M-structure is appropriately doped and carefully designed based on the dependence of its electronic structure on the superlattice geometry. (C)


Addresses: [Lang, Xiao-Li; Xia, Jian-Bai] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


Reprint Address: Lang, XL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: langxiaoli@semi.ac.cn; xiajb@semi.ac.cn

ISSN: 0021-8979

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Record 434 of 495

Title: Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

Author(s): Zhang, F (Zhang, Feng); Sun, GS (Sun, Guosheng); Zheng, L (Zheng, Liu); Liu, SB (Liu,

Shengbei); Liu, B (Liu, Bin); Dong, L (Dong, Lin); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Liu,

XF (Liu, Xingfang); Yan, GG (Yan, Guoguo); Tian, LX (Tian, Lixin); Zeng, YP (Zeng, Yiping)


10.1063/1.4789380 Published: JAN 28 2013



Abstract: Al2O3 films were prepared by atomic layer deposition using trimethylaluminum and H2O at 250 degrees C on 4H-SiC substrates and annealed at 1000 degrees C in N-2. The as-deposited and annealed Al2O3 films were measured and analyzed near the Al2O3/SiC interfaces by using an X-ray photoelectron spectroscopy (XPS) with etching processing. The XPS results showed that as-deposited

Al2O3 films were O-rich and converted to anhydride Al2O3 films after annealed at 1000 degrees C in N-2.

Si suboxides were found both at as-deposited and annealed Al2O3/SiC interfaces. Energy band shift between Al2O3 and 4H-SiC was found after annealing. The conduction band offsets of as-grown and annealed Al2O3/SiC were 1.90 and 1.53 eV, respectively. These results demonstrated that Al2O3 can be a good candidate to be applied in SiC metal-oxide-semiconductor devices. (C) 2013 American Institute of


Addresses: [Zhang, Feng; Sun, Guosheng; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Key Lab


[Zhang, Feng; Sun, Guosheng; Zheng, Liu; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao,

Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Ctr





ISSN: 0021-8979

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Record 435 of 495

Title: Quantum spin Hall effect induced by electric field in silicene

Author(s): An, XT (An, Xing-Tao); Zhang, YY (Zhang, Yan-Yang); Liu, JJ (Liu, Jian-Jun); Li, SS (Li,

Shu-Shen)


10.1063/1.4790147 Published: JAN 28 2013



Abstract: We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of

Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device. (C) 2013 American Institute of Physics.

[http://dx.doi.org/10.1063/1.4790147]

Addresses: [An, Xing-Tao] Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R

China.

[An, Xing-Tao; Zhang, Yan-Yang; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing


[Zhang, Yan-Yang] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

[Liu, Jian-Jun] Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R China.

Reprint Address: An, XT (reprint author), Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei,

Peoples R China.

E-mail Addresses: yanyang@semi.ac.cn

ISSN: 0003-6951

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Record 436 of 495

Title: Generation of Pure Bulk Valley Current in Graphene

Author(s): Jiang, YJ (Jiang, Yongjin); Low, T (Low, Tony); Chang, K (Chang, Kai); Katsnelson, MI

(Katsnelson, Mikhail I.); Guinea, F (Guinea, Francisco)


10.1103/PhysRevLett.110.046601 Published: JAN 23 2013



Abstract: The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical resonator through adiabatic cyclic deformations of the strains and a chemical potential in the suspended region. The accompanied strain gauge fields can break the spatial mirror symmetry of the problem within each of the two inequivalent valleys, leading to a finite valley current due to quantum pumping. An all-electrical measurement configuration is designed to detect the novel state with pure bulk valley currents. DOI: 10.1103/PhysRevLett.110.046601

Addresses: [Jiang, Yongjin] Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua


[Jiang, Yongjin] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China.

[Jiang, Yongjin; Chang, Kai] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

[Low, Tony] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA.

[Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Katsnelson, Mikhail I.] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands.

[Guinea, Francisco] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain.

Reprint Address: Jiang, YJ (reprint author), Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter

Phys, Jinhua 321004, Peoples R China.

E-mail Addresses: jyj@zjnu.cn; kchang@semi.ac.cn

ISSN: 0031-9007

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Record 437 of 495

Title: Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

Author(s): Jin, DD (Jin, Dong-Dong); Jiang, C (Jiang, Chao); Li, GD (Li, Guo-Dong); Zhang, LW (Zhang,

Liu-Wan); Yang, T (Yang, Tao); Liu, XL (Liu, Xiang-Lin); Yang, SY (Yang, Shao-Yan); Zhu, QS (Zhu,

Qin-Sheng); Wang, ZG (Wang, Zhan-Guo)


10.1063/1.4775790 Published: JAN 21 2013



Abstract: We suggest a new theoretical model to study the anisotropic scattering effect of the elongated quantum dots embedded in the GaAs/InGaAs double hetero-junction quantum well on the two-dimensional electron gas (2DEG). The elongated quantum dot (QD) with geometry which differs from ball-shaped quantum dot having isotropic cross section is assumed to be ellipsoid in the present calculation. The results show that the scattering in the direction parallel to the ellipsoid orientation (having small cross section) is weaker than that in the direction perpendicular to the ellipsoid orientation (having larger cross section) for the elongated QD when the mobile 2DEG is confined within the channel plane.

(C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775790]

Addresses: [Jin, Dong-Dong; Yang, Tao; Liu, Xiang-Lin; Yang, Shao-Yan; Zhu, Qin-Sheng; Wang,


China.

[Jin, Dong-Dong; Zhang, Liu-Wan] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Jiang, Chao; Li, Guo-Dong] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China.

Reprint Address: Jin, DD (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: ddjin2009@semi.ac.cn; qszhu@semi.ac.cn

ISSN: 0021-8979

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Record 438 of 495

Title: Conformal coating of parylene for surface anti-adhesion in polydimethylsiloxane (PDMS) double casting technique

Author(s): Chen, YF (Chen, Yuanfang); Pei, WH (Pei, Weihua); Tang, RY (Tang, Rongyu); Chen, SY

(Chen, Sanyuan); Chen, HD (Chen, Hongda)

Source: SENSORS AND ACTUATORS A-PHYSICAL Volume: 189 Pages: 143-150 DOI:

10.1016/j.sna.2012.09.024 Published: JAN 15 2013



Abstract: As a simple method to fabricate a high quality copy of master, PDMS double casting technique has been more and more popular in microfluidics chips and bioMEMS application. In this work, the method in which conformal coating of parylene C serves as a demolding anti-adhesion layer in PDMS double casting technique was proposed. First casting was carried out onto master mold to generate negative PDMS mold and second casting was done onto negative PDMS mold likewise to generate positive PDMS replica with the same structure as master mold. Microstructures with aspect ratio from 4:1 to 20:1 and sharp angle from 5 degrees to 40 degrees were successfully obtained by using this new method. Experiments show replicas remain high fidelity to their masters. This new method of surface anti-adhesive treatment is environment friendly. Moreover, a single coating of parylene C can make the treated mold keep its anti-adhesive property for long lifecycle regardless of the number of replica molding cycles. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Chen, Yuanfang; Pei, Weihua; Tang, Rongyu; Chen, Sanyuan; Chen, Hongda] Chinese





ISSN: 0924-4247

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Record 439 of 495

Title: A hybrid silicon single mode laser with a slotted feedback structure

Author(s): Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SGL

(Zhang, Siriguleng); Liu, L (Liu, Lei); Ma, SD (Ma, Shaodong); Zheng, WH (Zheng, Wanhua)




Abstract: In this paper, a III-V/Silicon hybrid single mode laser operating at a long wavelength for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode selected mechanism based on a slotted silicon waveguide is applied, which only need standard photolithography in the whole technological process.

The side mode suppression ratio of larger than 20dB is obtained from experiments. (C) 2013 Optical

Society of America

Addresses: [Zhang, Yejin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing




E-mail Addresses: yjzhang@semi.ac.cn; whzheng@semi.ac.cn

ISSN: 1094-4087

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Record 440 of 495

Title: Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

Author(s): Li, TF (Li, Tianfeng); Gao, LZ (Gao, Lizhen); Lei, W (Lei, Wen); Guo, LJ (Guo, Lijun); Yang, T

(Yang, Tao); Chen, YH (Chen, Yonghai); Wang, ZG (Wang, Zhanguo)


10.1186/1556-276X-8-27 Published: JAN 14 2013



Abstract: We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the

one-dimensional NW geometry and Raman selection rules.

Addresses: [Li, Tianfeng; Gao, Lizhen; Guo, Lijun] Henan Univ, Dept Phys, Sch Phys & Elect, Kaifeng


[Li, Tianfeng; Yang, Tao; Chen, Yonghai; Wang, Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat Sci,


[Lei, Wen] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia.

Reprint Address: Guo, LJ (reprint author), Henan Univ, Dept Phys, Sch Phys & Elect, Kaifeng 475004,

Peoples R China.

E-mail Addresses: juneguo@henu.edu.cn

ISSN: 1931-7573

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Record 441 of 495

Title: Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface

Author(s): Jia, CH (Jia, Caihong); Chen, YH (Chen, Yonghai); Liu, XL (Liu, Xianglin); Yang, SY (Yang,

Shaoyan); Zhang, WF (Zhang, Weifeng); Wang, ZG (Wang, Zhanguo)


10.1186/1556-276X-8-23 Published: JAN 10 2013



Abstract: Wurtzite ZnO thin films with different epitaxial relationships are obtained on as-received and etched (001), (011), and (111) SrTiO3 (STO) by metal-organic chemical vapor deposition (MOCVD). ZnO films exhibit nonpolar (1120) orientation with in-plane orientation relationship of < 0001 >(ZnO)//<

110 >(STO) on as-received (001) STO, and polar c-axis growth with < 1100 >(ZnO)//< 110 >(STO) on etched (001) STO substrates. ZnO films change from polar (0001) to semipolar (1012) oriented on as-received and etched (011) STO. On as-received and etched (111) STO, ZnO films show the same growing direction of polar (0001), but different in-plane orientations with 30A degrees rotation. The change of epitaxial relationship of ZnO films on as-received and etched (001), (011), and (111) STO substrates is accompanied with the increase of lattice mismatch, decrease of bond density, and increase of substrate surface roughness. In other words, the epitaxial relationships of ZnO/STO heterointerfaces can be controlled by etching the substrates. These results show that polar, nonpolar, and semipolar ZnO films for different applications can be grown epitaxially on STO substrates by MOCVD.

Addresses: [Jia, Caihong; Chen, Yonghai; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo] Chinese Acad

Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Jia, Caihong; Zhang, Weifeng] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004,

Peoples R China.

[Jia, Caihong; Zhang, Weifeng] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

Reprint Address: Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst

Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yhchen@red.semi.ac.cn

ISSN: 1931-7573

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Record 442 of 495

Title: Au-Decorated Silicene: Design of a High-Activity Catalyst toward CO Oxidation

Author(s): Li, C (Li, Chong); Yang, SX (Yang, Shengxue); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Li,

JB (Li, Jingbo)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 1 Pages: 483-488 DOI:

10.1021/jp310746m Published: JAN 10 2013



Abstract: First-principles calculations have been performed to study Au-decorated silicene (Au/silicene) as a high-activity catalyst for CO oxidation. The high binding strength of the Au/silicene system and the high diffusion-energy barrier of Au adsorbates, as well as the assisted Coulomb repulsion effect, jointly prevent the formation of Au clusters. Au/silicene transfers many more electrons to O-2 than to CO, thus facilitating CO oxidation first by the Langmuir-Hinshelwood (LH) mechanism (CO + O-2 -> OOCO -> CO2

+ O) and then by Eley-Rideal (ER) mechanism (CO + O -> CO2). The two reaction processes have quite low catalytic energy barriers of 0.34 and 0.32 eV, respectively. The underlying mechanism of high

catalytic oxidation of CO can be attributed to electronic-state hybridization among Au d orbitals and CO and O-2 2 pi* antibonding states around the Fermi energy. These findings enrich the applications of

Si-based materials to the high-activity catalytic field.

Addresses: [Li, Chong; Yang, Shengxue; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo] Chinese Acad Sci, Inst


Reprint Address: Yang, SX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: shengxueyang@semi.ac.cn; jbli@semi.ac.cn

ISSN: 1932-7447

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Record 443 of 495

Title: Band offsets and heterostructures of two-dimensional semiconductors

Author(s): Kang, J (Kang, Jun); Tongay, S (Tongay, Sefaattin); Zhou, J (Zhou, Jian); Li, JB (Li, Jingbo);

Wu, JQ (Wu, Junqiao)


10.1063/1.4774090 Published: JAN 7 2013



Abstract: The band offsets and heterostructures of monolayer and few-layer transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) are investigated from first principles calculations. The band alignments between different MX2 monolayers are calculated using the vacuum level as reference, and a simple model is proposed to explain the observed chemical trends. Some of the monolayers and their heterostructures show band alignments suitable for potential applications in spontaneous water splitting, photovoltaics, and optoelectronics. The strong dependence of the band offset on the number of layers also implicates a possible way of patterning quantum structures with thickness engineering. (C)


Addresses: [Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tongay, Sefaattin; Zhou, Jian; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA

94720 USA.

[Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083,

Peoples R China.

E-mail Addresses: jbli@semi.ac.cn; wuj@berkeley.edu

ISSN: 0003-6951

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Record 444 of 495

Title: Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer

Author(s): Li, HJ (Li, Hongjian); Kang, JJ (Kang, Junjie); Li, PP (Li, Panpan); Ma, J (Ma, Jun); Wang, H

(Wang, Hui); Liang, M (Liang, Meng); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Wang, GH

(Wang, Guohong)


10.1063/1.4773558 Published: JAN 7 2013



Abstract: A hole injection layer (HIL) is designed in GaN-based light emitting diodes (LEDs) between multiple quantum wells and p-AlGaN electron blocking layer (EBL). Based on numerical simulation by

APSYS, the band diagram is adjusted by HIL, leading to the improved hole-injection efficiency. The designed HIL is a p-GaN buffer layer grown at low temperature (LT_pGaN) on last quantum barrier before p-AlGaN EBL. The output power of the fabricated GaN-based LED device with LT_pGaN HIL is enhanced by 128% at 100 A/cm(2), while the efficiency droop is reduced by 33% compared to the conventional LED. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773558]

Addresses: [Li, Hongjian; Kang, Junjie; Li, Panpan; Ma, Jun; Liang, Meng; Li, Zhicong; Li, Jing; Yi,

Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Hui] YangZhou ZhongKe Semicond Lighting Co Ltd, Yangzhou 225009, Jiangsu, Peoples R

China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: lihongjian@yzzkled.com

ISSN: 0003-6951

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Record 445 of 495

Title: Electron spin dynamics study of bulk p-GaAs: The screening effect

Author(s): Zhao, CB (Zhao, Chunbo); Yan, TF (Yan, Tengfei); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu,

Zhichuan); Zhang, XH (Zhang, Xinhui)


10.1063/1.4775683 Published: JAN 7 2013



Abstract: In this work, the electron spin dynamics of bulk p-GaAs doped with Be grown by molecular beam epitaxy is investigated by using the time-resolved magneto-optical Kerr rotation technique. The spin relaxation/dephasing times T-1 and T-2* are systematically investigated as a function of hole doping density and photo-excitation density as well as temperature. The complex hole doping density dependence of spin relaxation times T-1 and T-2* is observed experimentally, which agrees well with predictions of the kinetic spin Bloch equation theory published previously [J. Jiang and M. Wu, Phys. Rev.

B 79, 125206 (2009)]. D'yakonov-Perel's mechanism [M. Dyakonov and V. Perel, Sov. Phys. Solid State

13, 3023 (1972)] is discussed to dominate the electron spin relaxation process in p-GaAs, with the effect of hole screening proven to play an important role. (C) 2013 American Institute of Physics.

[http://dx.doi.org/10.1063/1.4775683]

Addresses: [Zhao, Chunbo; Yan, Tengfei; Ni, Haiqiao; Niu, Zhichuan; Zhang, Xinhui] Chinese Acad Sci,

Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, CB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab



ISSN: 0003-6951

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Record 446 of 495

Title: First-principles study of atomic hydrogen adsorption and initial hydrogenation of Zr(0001) surface

Author(s): Zhang, P (Zhang, Peng); Wang, SX (Wang, Shuangxi); Zhao, J (Zhao, Jian); He, CH (He,

Chaohui); Zhao, YL (Zhao, Yaolin); Zhang, P (Zhang, Ping)


10.1063/1.4772675 Published: JAN 7 2013



Abstract: The atomic hydrogen adsorption on Zr(0001) surface is systematically investigated by using density functional theory within the generalized gradient approximation and a supercell approach. The coverage dependence of the adsorption structures and energetics is studied in detail for a wide range from 0.11 to 2.0 monolayer. At low coverage of 0 < Theta <= 1.0, the most stable adsorption site is identified as the on-surface hcp site followed by the fcc site, and the adsorption energy gradually increases with the coverage, thus, indicating the higher stability of on-surface adsorption and the tendency to form H clusters. The origin of this stability is carefully analyzed by the projected density of states and the charge distribution showing the Zr-H chemical bonding with a mixed ionic/covalent feature during the surface hydrogenation. In addition, the minimum energy paths as well as the activation barriers of the on-surface diffusion and the penetration from on-surface sites to subsurface sites are also calculated. At high coverage of 1.0 < Theta <= 2.0, it is found that the co-adsorption configuration with 1.0 monolayer H residing on the surface hcp sites and the remaining (Theta - 1) monolayer H occupying the sub-surface octahedral sites is most energetically favorable. The electronic structure properties of the resultant H-Zr-H sandwich structures at the coverage range of 1.0 < Theta <= 2.0 reveal the similar characteristics to the bulk hydride ZrH2, providing a detailed microscopic understanding for the Zr surface hydrogenation phenomenon. (C) 2013 American Institute of Physics.

[http://dx.doi.org/10.1063/1.4772675]

Addresses: [Zhang, Peng; He, Chaohui; Zhao, Yaolin] Xi An Jiao Tong Univ, Dept Nucl Sci & Technol,

Xian 710049, Peoples R China.

[Wang, Shuangxi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


[Zhao, Jian] China Univ Min & Technol, State Key Lab Geomech & Deep Underground Engn, Beijing


[Zhang, Ping] Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China.

Reprint Address: Zhang, P (reprint author), Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049,

Peoples R China.

E-mail Addresses: pengzhang@xjtu.edu.cn; zhang_ping@iapcm.ac.cn

ISSN: 0021-8979

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Record 447 of 495

Title: Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes

Author(s): Zhang, YY (Zhang, Yiyun); Zheng, HY (Zheng, Haiyang); Guo, EQ (Guo, Enqing); Cheng, Y

(Cheng, Yan); Ma, J (Ma, Jun); Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi,

Xiaoyan); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)


10.1063/1.4772669 Published: JAN 7 2013



Abstract: Light extraction efficiency (LEE) droop as an important factor contributing to the efficiency droop of InGaN-based light-emitting diodes (LEDs) has been demonstrated and investigated in detail. The LEE droop effect is induced by the spatial dependence of the extraction efficiency of photons inside of the

LED devices and the aggravating crowding effect of the injection electrons around n-type electrodes as injection current increases. A current blocking layer is introduced to alleviate the LEE droop effect. And the light output power of the LEDs is also improved by 43% at an injection current of 350 mA. (C) 2013


Addresses: [Zhang, Yiyun; Guo, Enqing; Cheng, Yan; Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yi,

Xiaoyan; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res

& Dev Ctr, Beijing 100083, Peoples R China.


[Zheng, Haiyang] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing


Reprint Address: Yi, XY (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


E-mail Addresses: spring@semi.ac.cn

ISSN: 0021-8979

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Record 448 of 495

Title: First-principles study on strontium titanate for visible light photocatalysis

Author(s): Liu, HF (Liu, Hongfei); Dong, HF (Dong, Huafeng); Meng, XQ (Meng, Xiuqing); Wu, FM (Wu,

Fengmin)

Source: CHEMICAL PHYSICS LETTERS Volume: 555 Pages: 141-144 DOI:

10.1016/j.cplett.2012.11.005 Published: JAN 3 2013



Abstract: Density functional calculations have been performed on the electronic structure of donor-acceptor (V-N, Nb-N, Cr-C and Mo-C) co-doped SrTiO3 to improve their photocatalytic activity in visible light region. By analyzing the electronic structure of pure and co-doped SrTiO3, we propose that the Mo-C co-doped system is promising materials for the visible light photocatalyst. It is found that the doping of Mo-C complex may shift the valence band edge up significantly, while keeping the conduction band edge almost unchanged. The calculated defect binding energies indicate that the co-doped systems are energetically favorable than their respective mono-doped systems. (C) 2012 Elsevier B. V.

All rights reserved.

Addresses: [Liu, Hongfei; Dong, Huafeng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


[Meng, Xiuqing; Wu, Fengmin] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004,

Peoples R China.

Reprint Address: Liu, HF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: liuhf@semi.ac.cn

ISSN: 0009-2614

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Record 449 of 495

Title: Optimum design of cam curve of zoom system based on Zemax

Author(s): Gao, YH (Gao, Yuhan); Yang, ZQ (Yang, Zhiqing); Zhao, WX (Zhao, Weixing); Jiang, B (Jiang,

Bo); Li, DM (Li, Dongmei); Li, MS (Li, Mingshan)

Source: OPTIK Volume: 124 Issue: 23 Pages: 6358-6362 DOI: 10.1016/j.ijleo.2013.05.042

Published: 2013



Abstract: Cam curve design is an indispensable step for a zoom system design. A novel method of designing cam curve based on Zemax is presented in this article. By utilizing Zemax programming language (ZPL) to create a program, which can accurately produce the data and shape of a cam curve, and obtain the curve fitting equation of the cam curve by using least squares method. Meanwhile, the program can figure out the continuous change of MTF during the whole zooming process, which helps us to evaluate the optical performance and imaging characters at any focal length for a zoom system. It can improve the efficiency and accuracy of a zoom system design, which has significant value for engineering application. (C) 2013 Elsevier GmbH. All rights reserved.

Addresses: [Gao, Yuhan; Yang, Zhiqing; Jiang, Bo; Li, Dongmei; Li, Mingshan] Chinese Acad Sci, Inst


[Zhao, Weixing] Nanjing Optotek Corp, Nanjing 210001, Jiangsu, Peoples R China.

Reprint Address: Gao, YH (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: gaoyuhan@126.com

ISSN: 0030-4026

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Record 450 of 495

Title: Polarization properties of Rayleigh backscattering with a high degree of coherence in single-mode fibers

Author(s): Xu, TW (Xu, Tuanwei); Ren, MZ (Ren, Meizhen); Li, F (Li, Fang)


Published: 2013



Abstract: The state and degree of polarization (SOP, DOP) of Rayleigh backscattering (RB) are analyzed by using Jones calculus for the case the source coherent length is larger than the fiber length. It shows that the SOP of RB is the same as the SOP of input light, and the fiber disturbance does not influence the

SOP of RB. The DOP of RB is also the same as that of input light. The corresponding experiments have been carried out, and the results agree well with all the predictions. (C) 2013 Elsevier GmbH. All rights reserved.

Addresses: [Xu, Tuanwei; Ren, Meizhen; Li, Fang] Chinese Acad Sci, Optoelect Syst Lab, Inst Semicond,


Reprint Address: Xu, TW (reprint author), Chinese Acad Sci, Optoelect Syst Lab, Inst Semicond, Beijing


E-mail Addresses: xutuanwei@semi.ac.cn

ISSN: 0030-4026

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Record 451 of 495

Title: Improved open-circuit voltage of silicon nanowires solar cells by surface passivation

Author(s): Yang, P (Yang, Ping); Zeng, XB (Zeng, Xiangbo); Xie, XB (Xie, Xiaobing); Zhang, XD (Zhang,

Xiaodong); Li, H (Li, Hao); Wang, ZG (Wang, Zhanguo)

Source: RSC ADVANCES Volume: 3 Issue: 47 Pages: 24971-24974 DOI: 10.1039/c3ra42823k

Published: 2013



Abstract: The surface recombination at the surface of silicon nanowires (SiNWs) deteriorates the performance of SiNWs solar cells and thus the reduction of the SiNWs surface recombination becomes a crucial issue. In this paper, we observe an improved SiNW surface passivation by hydrogenated amorphous silicon (a-Si:H). The results show that a thicker i-layer results in a higher open-circuit voltage

V-oc. That can be ascribed to the better passivation by thicker intrinsic a-Si:H. The dark current-voltage data reveal that the reverse leakage current and the diode ideality factor at high forward bias decrease monotonically with increasing the thickness of i-layer. Moreover, for the first time, we observe that the lower V-oc is associated with the capacitance-voltage (C-V) curve shifting toward higher positive voltage.

We propose that the shift of the curve is related to the capacitance affected by the surface states. Finally we prove that the improvement in the NW solar cell performance, especially the V-oc, can be attributed to the reduction of the surface states on SiNWs.

Addresses: [Yang, Ping; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


[Zeng, Xiangbo; Xie, Xiaobing; Zhang, Xiaodong; Li, Hao] Chinese Acad Sci, Inst Semicond, State Key


Reprint Address: Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: xbzeng@semi.ac.cn

ISSN: 2046-2069

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Record 452 of 495

Title: Enhanced Light Emission of InGaN Light-Emitting-Diodes by Nanosphere Lithography Generated

Photonic Crystals with Different Geometries

Author(s): Zheng, HY (Zheng, Haiyang); Wu, K (Wu, Kui)

Source: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Volume: 2 Issue: 11

Pages: R241-R244 DOI: 10.1149/2.021311jss Published: 2013



Abstract: This paper has proposed a simple, low-cost and high-throughput method to fabricate the pillar, cone and volcano photonic crystal (PhC) light-emitting diodes (LEDs) on the p-GaN surface using self-assembled nanosphere lithography (NSL) process to improve the light emission of InGaN-based light-emitting diodes (LEDs). A monolayer of self-assembled nanospheres has served as an etching mask for pattern transfer to the p-GaN layer, resulting in hexagonal PhC arrays with different geometrical patterns. Among the different patterns, LEDs with volcano PhC structures have exhibited the best optical property. At inject current of 350 mA, the light output power (LOP) of the volcano PhC LEDs has been enhanced by 43%, compared to that of the conventional LEDs. The volcano PhC LEDs have also exhibited emission divergence angle reduction of 19.8 degrees with respect to the conventional ones.

Their emission characteristics and mechanisms have been further investigated with finite-difference time-domain (FDTD) simulations. (C) 2013 The Electrochemical Society. All rights reserved.

Addresses: [Zheng, Haiyang; Wu, Kui] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


[Wu, Kui] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Key Lab Integrated


Reprint Address: Zheng, HY (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting


E-mail Addresses: zhy168@semi.ac.cn

ISSN: 2162-8769

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Record 453 of 495

Title: Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type

GaSb nanowires

Author(s): Xu, GW (Xu, Guangwei); Huang, SY (Huang, Shaoyun); Wang, XY (Wang, Xiaoye); Yu, B (Yu,

Bin); Zhang, H (Zhang, Hui); Yang, T (Yang, Tao); Xu, HQ (Xu, H. Q.); Dai, L (Dai, Lun)

Source: RSC ADVANCES Volume: 3 Issue: 43 Pages: 19834-19839 DOI: 10.1039/c3ra43127d

Published: 2013



Abstract: High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18) cm(-3) and similar to 14.2 cm(2) V-1 s(-1), respectively. The Schottky contact characteristics were observed and the barrier height was found to be similar to 14 meV. Our results show that the GaSb NWs could be used as building blocks for emerging p-type nanoelectronic devices in extremely low temperature environments.

Addresses: [Xu, Guangwei; Yu, Bin; Zhang, Hui; Dai, Lun] Peking Univ, State Key Lab Mesoscop Phys,


[Xu, Guangwei; Yu, Bin; Zhang, Hui; Dai, Lun] Peking Univ, Sch Phys, Beijing 100871, Peoples R China.

[Huang, Shaoyun; Yang, Tao] Peking Univ, Dept Elect, Beijing 100871, Peoples R China.

[Huang, Shaoyun; Xu, H. Q.] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples

R China.

[Wang, Xiaoye; Yang, Tao] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083,

Peoples R China.

[Xu, H. Q.] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden.

Reprint Address: Xu, HQ (reprint author), Peking Univ, Dept Elect, Beijing 100871, Peoples R China.

E-mail Addresses: Hongqi.Xu@.f.lth.se; lundai@pku.edu.cn

ISSN: 2046-2069

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Record 454 of 495

Title: Single-crystalline metal germanate nanowire-carbon textiles as binder-free, self-supported anodes for high-performance lithium storage

Author(s): Li, WW (Li, Wenwu); Wang, XF (Wang, Xianfu); Liu, B (Liu, Bin); Xu, J (Xu, Jing); Liang, B

(Liang, Bo); Luo, T (Luo, Tao); Luo, SJ (Luo, Sijun); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: NANOSCALE Volume: 5 Issue: 21 Pages: 10291-10299 DOI: 10.1039/c3nr03530a

Published: 2013



Abstract: Single-crystalline metal germanate nanowires, including SrGe4O9, BaGe4O9, and Zn2GeO4 were successfully grown on carbon textile via a simple low-cost hydrothermal method on a large scale.

The as-grown germanate nanowires-carbon textiles were directly used as binder-free anodes for lithium-ion batteries, which exhibited highly reversible capacity in the range of 900-1000 mA h g(-1) at

400 mA g(-1), good cyclability (no obvious capacity decay even after 100 cycles), and excellent rate capability with a capacity of as high as 300 mA h g(-1) even at 5 A g(-1). Such excellent electrochemical performance can be ascribed to the three-dimensional interconnected conductive channels composed of the flexible carbon microfibers, which not only serve as the current collector but also buffer the volume change of the active material upon cycling. Additionally, the one-dimensional nanostructures grown directly on the carbon microfibers also ensure fast charge carrier (e(-) and Li+) transport, large surface areas, better permeabilities, and more active sites, which also contributed to the improved electrochemical performance.

Addresses: [Li, Wenwu; Wang, Xianfu; Liu, Bin; Xu, Jing; Liang, Bo; Luo, Tao; Luo, Sijun; Chen, Di]

Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

[Li, Wenwu; Liang, Bo; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect,



ISSN: 2040-3364

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Record 455 of 495

Title: Low-cost multiple-walled carbon nanotubes absorber for passively Q-switched and mode-locked

Nd:YVO4 laser

Author(s): Wang, YG (Wang, Yong Gang); Zhang, L (Zhang, Ling); Lin, XC (Lin, Xue Chun)


Published: 2013



Abstract: A low-cost multiple-walled carbon nanotubes/polyvinyl alcohol (MWCNTs/PVA) absorber was fabricated by the characteristics of high viscosity in large molecule PVA aqueous solution and vertical evaporation technique. Sandwich structured MWCNT/PVA absorber was constructed by a piece of

MWCNT absorber, a piece of round quartz and a piece of reflective mirror. We exploited it to realize

Q-switched mode locking operation in a diode-pumped Nd:YVO4 laser. The maximum average output power is about 630 mW. (C) 2013 Elsevier GmbH. All rights reserved.

Addresses: [Wang, Yong Gang] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong,

Peoples R China.

[Zhang, Ling; Lin, Xue Chun] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing,

Peoples R China.

Reprint Address: Wang, YG (reprint author), Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong,

Hong Kong, Peoples R China.

E-mail Addresses: chinawygxjw@hotmail.com

ISSN: 0030-4026

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Record 456 of 495

Title: Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Author(s): Zhao, WJ (Zhao, Weijie); Ghorannevis, Z (Ghorannevis, Zohreh); Amara, KK (Amara, Kiran

Kumar); Pang, JR (Pang, Jing Ren); Toh, M (Toh, Minglin); Zhang, X (Zhang, Xin); Kloc, C (Kloc,

Christian); Tan, PH (Tan, Ping Heng); Eda, G (Eda, Goki)

Source: NANOSCALE Volume: 5 Issue: 20 Pages: 9677-9683 DOI: 10.1039/c3nr03052k

Published: 2013



Abstract: Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to the interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2, isoelectronic compounds of MoS2, in the mono-to few-layer thickness regime. We show that, similar to the case of

MoS2, the characteristic A(1g) and E-2g(1) modes exhibit stiffening and softening with increasing number of layers, respectively, with a small shift of less than 3 cm(-1) due to large mass of the atoms.

Thickness dependence is also observed in a series of multiphonon bands arising from overtone, combination, and zone edge phonons, whose intensity exhibit significant enhancement in excitonic resonance conditions. Some of these multiphonon peaks are found to be absent only in monolayers.

These features provide a unique fingerprint and rapid identification for monolayer flakes.

Addresses: [Zhao, Weijie; Ghorannevis, Zohreh; Eda, Goki] Natl Univ Singapore, Dept Phys, Singapore

117542, Singapore.

[Amara, Kiran Kumar; Pang, Jing Ren; Eda, Goki] Natl Univ Singapore, Dept Chem, Singapore 117543,

Singapore.

[Zhao, Weijie; Ghorannevis, Zohreh; Eda, Goki] Natl Univ Singapore, Graphene Res Ctr, Singapore

117546, Singapore.

[Toh, Minglin; Kloc, Christian] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798,

Singapore.

[Zhang, Xin; Tan, Ping Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &


Reprint Address: Eda, G (reprint author), Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542,

Singapore.

E-mail Addresses: g.eda@nus.edu.sg

ISSN: 2040-3364

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Record 457 of 495

Title: GaN-Based Light Emitting Diodes with Hybrid Micro-Nano Patterned Sapphire Substrate

Author(s): Cheng, Y (Cheng, Yan); Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Zheng, HY

(Zheng, Haiyang); Ma, J (Ma, Jun); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 11 Pages: Q93-Q97 DOI:

10.1149/2.007311ssl Published: 2013



Abstract: GaN-based light emitting diodes (LEDs) have been fabricated with hybrid micro-nano patterned sapphire substrate (MNPSS). Random nano pattern distributed on the spacing and inclined surface of the micro pattern was realized utilizing standard photolithography, nickel etching mask and inductively coupled plasma (ICP) etching techniques. Both surface morphology and X-ray diffraction (XRD) results showed that MNPSS and conventional MPSS had similar effect on the crystalline quality of the epilayers.

Furthermore, light output powers (LOP) of LEDs with MNPSS was increased considerably compared with conventional planar sapphire substrate (CPSS) and was even higher than that of LEDs employing micro patterned sapphire substrate (MPSS), indicating more superior performance of GaN-based LEDs was obtained by employing the hybrid micro-nano pattern. (C) 2013 The Electrochemical Society. All rights reserved.

Addresses: [Cheng, Yan; Wang, Liancheng; Zhang, Yiyun; Zheng, Haiyang; Ma, Jun; Yi, Xiaoyan; Wang,

Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing


Reprint Address: Cheng, Y (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond


E-mail Addresses: chengyan@semi.ac.cn

ISSN: 2162-8742

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Record 458 of 495

Title: SnO2-microtube-assembled cloth for fully flexible self-powered photodetector nanosystems

Author(s): Hou, XJ (Hou, Xiaojuan); Liu, B (Liu, Bin); Wang, XF (Wang, Xianfu); Wang, ZR (Wang,

Zhuoran); Wang, QF (Wang, Qiufan); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)


Published: 2013



Abstract: Integrating an energy conversion or storage device with photodetectors into a self-powered system provides a promising route to future devices aimed at reduced size, low weight and high flexibility.

We reported here the fabrication of a fully flexible self-powered photodetector nanosystem by integrating a flexible SnO2-cloth-based ultraviolet photodetector with a flexible SnO2-cloth-based lithium-ion battery.

The flexible SnO2-cloth-based ultraviolet photodetectors showed fast response to ultraviolet light with excellent flexibility and stability. Using SnO2-on-carbon-cloth as the binder-free anode and commercial

LiCoO2/Al foil as the cathode, a flexible full lithium-ion battery was assembled, exhibiting a reversible capacity of 550 mA h g(-1) even after 60 cycles at a current density of 200 mA g(-1) in a potential window of 2-3.8 V. When integrated with and driven by the flexible full battery, the fully flexible self-powered photodetector nanosystem exhibits comparable performance with an analogous externally powered device. Such an integrated nanosystem could serve as a wireless detecting system in large areas, as required in applications such as environmental sensing and biosensing.

Addresses: [Hou, Xiaojuan; Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Wang, Qiufan; Chen, Di] Huazhong

Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

[Hou, Xiaojuan; Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Wang, Qiufan; Chen, Di] Huazhong Univ Sci &

Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.



Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect,



ISSN: 2040-3364

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Record 459 of 495

Title: Abnormal low-temperature behavior of a continuous photocurrent in Bi2S3 nanowires

Author(s): Li, RX (Li, Renxiong); Yue, Q (Yue, Qu); Wei, ZM (Wei, Zhongming)

Source: JOURNAL OF MATERIALS CHEMISTRY C Volume: 1 Issue: 37 Pages: 5866-5871 DOI:

10.1039/c3tc30943f Published: 2013



Abstract: High-quality Bi2S3 nanowires are synthesized and their photoresponses are investigated in detail. Our results show that the photoresponsive curves have distinctly different characteristics at low-temperature (50 K) compared to those at room temperature (290 K). The transferred-electron effect is believed to cause this difference. A first principle calculation shows that Bi2S3 has many energy valleys, which agree with our experimental analysis. At low temperature, due to the lack of sufficient phonon energy, the photoexcited electrons in Bi2S3 mainly aggregate at the bottom of the conduction band. When this electron concentration increased to a high enough level after illumination, an electron transfer between the energy valleys happened and the photocurrent began to decrease slowly after the rapid increase in the first stage. After the transfer process reaches equilibrium, the photocurrent reaches a minimum, thus the trap states play a dominant role and the photocurrent rises slowly again.

Furthermore, photocurrent curves at different temperatures were recorded to estimate the phonon energy value needed to assist the electron transitions. The required phonon energy is calculated to be about 16.3 meV (corresponding to 190 K), which fits well with previous results.

Addresses: [Li, Renxiong; Wei, Zhongming] Chinese Acad Sci, Inst Semiconductors, State Key Lab



Reprint Address: Wei, ZM (reprint author), Chinese Acad Sci, Inst Semiconductors, State Key Lab


E-mail Addresses: zmwei@semi.ac.cn

ISSN: 2050-7526

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Record 460 of 495

Title: Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg

Doped Barrier

Author(s): Si, Z (Si, Zhao); Wei, TB (Wei, Tongbo); Ma, J (Ma, Jun); Yan, JC (Yan, Jianchang); Wei, XC

(Wei, Xuecheng); Lu, HX (Lu, Hongxi); Fu, BL (Fu, Binglei); Zhu, SX (Zhu, Shaoxin); Liu, Z (Liu, Zhe);

Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 10 Pages: R37-R39 DOI:

10.1149/2.006310ssl Published: 2013



Abstract: A study about the effect of Mg doping in specified quantum-barrier on dual wavelength light emitting diodes (LEDs) was performed. A series of dual wavelength LEDs with different Mg doping conditions and barrier thickness were fabricated. According to electroluminescence measurement, as Mg doping concentration and barrier thickness varied, improved carrier distribution and bottom QWs emitting was achieved. This result is in accord with APSYS simulation. In addition, the sample with appropriate

Mg doping level showed dual wavelength emitting. It is concluded that Mg doping in specified quantum-barrier could improve optical and electrical properties of dual wavelength LEDs. (c) 2013 The

Electrochemical Society. All rights reserved.

Addresses: [Si, Zhao; Wei, Tongbo; Ma, Jun; Yan, Jianchang; Wei, Xuecheng; Lu, Hongxi; Fu, Binglei;

Zhu, Shaoxin; Liu, Zhe; Wang, Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr

Semicond Lighting, Beijing 100083, Peoples R China.

Reprint Address: Si, Z (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond


E-mail Addresses: sizhao@semi.ac.cn; tbwei@semi.ac.cn

ISSN: 2162-8742

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Record 461 of 495

Title: Multi-component continuous separation chip composed of micropillar arrays in a split-level spiral channel

Author(s): Geng, ZX (Geng, Zhaoxin); Ju, YR (Ju, Yanrui); Wang, QF (Wang, Qifeng); Wang, W (Wang,

Wei); Li, ZH (Li, Zhihong)

Source: RSC ADVANCES Volume: 3 Issue: 34 Pages: 14798-14806 DOI: 10.1039/c3ra41906a

Published: 2013



Abstract: The separation and concentration of blood components or biological functional microparticles, have become indispensable in various biomedical and environmental applications. In this paper, a chip with two rows of micropillar arrays along a spiral-channel, in which plasma and various blood cells with different sizes can be separated or enriched simultaneously, has been achieved. The proposed method combines crossflow, centrifugation and size-selective separation approaches. Specially, a 40 mm-high step, which can increase the pressure difference, is designed between the inner and middle channel to enhance the separation efficiency and purity. In the chip with split-level channels, the number of red blood cells (RBCs) gathered from the inner outlet decreased significantly, and the collected plasma volume increased, compared to those in the plain one.

Addresses: [Geng, Zhaoxin] Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China.

[Geng, Zhaoxin; Ju, Yanrui; Wang, Wei; Li, Zhihong] Peking Univ, Inst Microelect, Natl Key Lab Sci &

Technol Micro Nano Fabricat, Beijing 100871, Peoples R China.

[Wang, Qifeng] Peking Univ, Coll Engn, Dept Mech & Aerosp Engn, Beijing 100871, Peoples R China.

[Geng, Zhaoxin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

Reprint Address: Geng, ZX (reprint author), Minzu Univ China, Sch Informat Engn, Beijing 100081,

Peoples R China.

E-mail Addresses: Gengsir@163.com

ISSN: 2046-2069

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Record 462 of 495

Title: Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography

Technique

Author(s): Sun, SH (Sun, Shenghua); Lu, P (Lu, Peng); Xu, J (Xu, Jun); Xu, L (Xu, Ling); Chen, KJ (Chen,

Kunji); Wang, QM (Wang, Qimin); Zuo, YH (Zuo, Yuhua)

Source: NANO-MICRO LETTERS Volume: 5 Issue: 1 Pages: 18-25 DOI: 10.3786/nml.v5i1.p18-25

Published: 2013



Abstract: Nano-structured photon management is currently an interesting topic since it can enhance the optical absorption and reduce the surface reflection which will improve the performance of many kinds of optoelectronic devices, such as Si-based solar cells and light emitting diodes. Here, we report the fabrication of periodically nano-patterned Si structures by using polystyrene nano-sphere lithography technique. By changing the diameter of nano-spheres and the dry etching parameters, such as etching time and etching power, the morphologies of formed Si nano-structures can be well controlled as revealed by atomic force microscopy. A good broadband antireflection property has been achieved for the formed periodically nano-patterned Si structures though they have the low aspect ratio (<0.53). The reflection can be significantly reduced compared with that of flat Si substrate in a wavelength range from

400 nm to 1200 nm. The weighted mean reflection under the AM1.5 solar spectrum irradiation can be as low as 3.92% and the corresponding optical absorption is significantly improved, which indicates that the present Si periodic nano-structures can be used in Si-based thin film solar cells.

Addresses: [Sun, Shenghua; Lu, Peng; Xu, Jun; Xu, Ling; Chen, Kunji] Nanjing Univ, Natl Lab Solid State

Microstruct, Nanjing 210093, Jiangsu, Peoples R China.

[Sun, Shenghua; Lu, Peng; Xu, Jun; Xu, Ling; Chen, Kunji] Nanjing Univ, Sch Elect Sci & Engn, Nanjing

210093, Jiangsu, Peoples R China.

[Wang, Qimin; Zuo, Yuhua] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond,


Reprint Address: Xu, J (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093,

Jiangsu, Peoples R China.

E-mail Addresses: junxu@nju.edu.cn

ISSN: 2150-5551

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Record 463 of 495

Title: Recent progress in organic-inorganic hybrid solar cells

Author(s): Fan, X (Fan, Xia); Zhang, ML (Zhang, Mingliang); Wang, XD (Wang, Xiaodong); Yang, FH

(Yang, Fuhua); Meng, XM (Meng, Xiangmin)

Source: JOURNAL OF MATERIALS CHEMISTRY A Volume: 1 Issue: 31 Pages: 8694-8709 DOI:

10.1039/c3ta11200d Published: 2013



Abstract: Organic-inorganic hybrid solar cells were expected to adopt the advantages of both organic and inorganic materials. Due to several crucial problems, the power conversion efficiency of most hybrid solar cells was lower than 1%. Recent work reported the highest power conversion efficiency of a hybrid solar cell as 11.3%, which increased the research interest into organic-inorganic hybrid solar cells. This article focuses on the progress in state-of-the-art research on organic-inorganic hybrid solar cells and the associated key issues, including the energy band alignment of the organic and inorganic components, interface control of the heterojunction, and the use of ordered nanostructures were discussed. The challenges and prospects for organic-inorganic hybrid solar cells in the near future are discussed.

Addresses: [Fan, Xia] Beihang Univ, Key Lab Bioinspired Smart Interfacial Sci & Techn, Minist Educ, Sch

Chem & Environm, Beijing 100191, Peoples R China.

[Zhang, Mingliang; Wang, Xiaodong; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr

Semicond Integrated Technol, Beijing 100083, Peoples R China.

[Zhang, Mingliang; Meng, Xiangmin] Chinese Acad Sci, Key Lab Photochem Convers & Optoelect Mat,

Tech Inst Phys & Chem, Beijing 100190, Peoples R China.

Reprint Address: Fan, X (reprint author), Beihang Univ, Key Lab Bioinspired Smart Interfacial Sci & Techn,

Minist Educ, Sch Chem & Environm, Beijing 100191, Peoples R China.

E-mail Addresses: xmmeng@mail.ipc.ac.cn

ISSN: 2050-7488

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Record 464 of 495

Title: Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth

Author(s): Wen, JJ (Wen, J. J.); Liu, Z (Liu, Z.); Li, LL (Li, L. L.); Li, C (Li, C.); Xue, CL (Xue, C. L.); Zuo,

YH (Zuo, Y. H.); Li, CB (Li, C. B.); Wang, QM (Wang, Q. M.); Cheng, BW (Cheng, B. W.)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 9 Pages: P73-P75 DOI:

10.1149/2.005309ssl Published: 2013



Abstract: Ge-on-insulator film stacks were formed on Si (100) substrates by a rapid melt growth process at different soaking temperatures and cooling rates to investigate the orientation twist. The cooling rate was found to be the crucial parameter affecting the twist. With decreased cooling rate to 57.8 degrees

C/s or lower, the twist along the strip was inhibited. The lattice rotation speed near the end of the Ge strip was slower than that of the forward part because of the less latent heat released toward the end of the strip. (c) 2013 The Electrochemical Society. All rights reserved.

Addresses: [Wen, J. J.; Liu, Z.; Li, L. L.; Li, C.; Xue, C. L.; Zuo, Y. H.; Li, C. B.; Wang, Q. M.; Cheng, B. W.]


Reprint Address: Wen, JJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 2162-8742

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Record 465 of 495

Title: Kinetic mechanism of ZnO hexagonal single crystal slices on GaN/sapphire by a layer-by-layer growth mode

Author(s): Jia, GZ (Jia, Guozhi); Lu, XC (Lu, Xucen); Hao, BX (Hao, Bingxue); Wang, XL (Wang,

Xionglong); Li, YM (Li, Yumei); Yao, JH (Yao, Jianghong)

Source: RSC ADVANCES Volume: 3 Issue: 31 Pages: 12826-12830 DOI: 10.1039/c3ra23261a

Published: 2013



Abstract: Hexagonal single crystal ZnO slices were prepared on a GaN/sapphire substrate by a chemical bath deposition method at low temperature. The ZnO slices were characterized by electron microscopy and photoluminescence spectroscopy. The nature of the kinetic mechanisms of the two-dimensional hexagonal ZnO slices' growth is explored. The formation of the slices involves several important processes: an ion adsorption competition mechanism, the forming of a nuclear center, diffusion of the nanoclusters and ripening of the ZnO cluster and a layer-by-layer growth process.



[Lu, Xucen; Hao, Bingxue; Wang, Xionglong; Li, Yumei; Yao, Jianghong] Nankai Univ, Key Lab Weak

Light Nonlinear Photon, Minist Educ, Sch Phys, Tianjin 300457, Peoples R China.

[Lu, Xucen; Hao, Bingxue; Wang, Xionglong; Li, Yumei; Yao, Jianghong] Nankai Univ, TEDA Appl Phys

Sch, Tianjin 300457, Peoples R China.


E-mail Addresses: jiaguozhi@tjuci.edu.cn

ISSN: 2046-2069

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Record 466 of 495

Title: Fabrication of curled conducting polymer microfibrous arrays via a novel electrospinning method for stretchable strain sensors

Author(s): Sun, B (Sun, Bin); Long, YZ (Long, Yun-Ze); Liu, SL (Liu, Shu-Liang); Huang, YY (Huang,

Yuan-Yuan); Ma, J (Ma, Jie); Zhang, HD (Zhang, Hong-Di); Shen, GZ (Shen, Guozhen); Xu, S (Xu,

Sheng)

Source: NANOSCALE Volume: 5 Issue: 15 Pages: 7041-7045 DOI: 10.1039/c3nr01832f

Published: 2013



Abstract: Stretchable strain sensors based on aligned microfibrous arrays of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate)-poly(vinyl pyrrolidone) (PEDOT:PSS-PVP) with curled architectures have been fabricated by a novel reciprocating-type electrospinning setup with a spinneret in straightforward simple harmonic motion. The incorporation of PEDOT:PSS into PVP is confirmed by Raman spectra, which improves the room-temperature conductivity of the composite fibers

(1.6 x 10(-5) S cm(-1)). Owing to the curled architectures of the as-spun fibrous polymer arrays, the sensors can be stretched reversibly with a linear elastic response to strain up to 4%, which is three times higher than that from electrospun nonwoven mats. In addition, the stretchable strain sensor with a high repeatability and durability has a gauge factor of about 360. These results may be helpful for the fabrication of stretchable devices which have potential applications in some fields such as soft robotics, elastic semiconductors, and elastic solar cells.

Addresses: [Sun, Bin; Long, Yun-Ze; Liu, Shu-Liang; Huang, Yuan-Yuan; Ma, Jie; Zhang, Hong-Di; Xu,

Sheng] Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China.

[Sun, Bin] Qingdao Univ, Coll Chem Chem Engn & Environm, Qingdao 266071, Peoples R China.

[Long, Yun-Ze; Zhang, Hong-Di; Xu, Sheng] Qingdao Univ, Key Lab Photon Mat & Technol Univ

Shandong, Qingdao 266071, Peoples R China.

[Long, Yun-Ze] Qingdao Univ, State Key Lab Cultivat Base New Fiber Mat & Moder, Qingdao 266071,

Peoples R China.



Reprint Address: Long, YZ (reprint author), Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China.

E-mail Addresses: yunze.long@163.com

ISSN: 2040-3364

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Record 467 of 495

Title: Timing and Operating Mode Design for Time-Gated Fluorescence Lifetime Imaging Microscopy

Author(s): Liu, C (Liu, Chao); Wang, XW (Wang, Xinwei); Zhou, Y (Zhou, Yan); Liu, YL (Liu, Yuliang)

Source: SCIENTIFIC WORLD JOURNAL Article Number: DOI: 10.1155/2013/801901 Published:

2013



Abstract: Steady-state fluorence imaging and time-resolved fluorescence imaging are two important areas in fluorescence imaging research. Fluorescence lifetime imaging is an absolute measurement method which is independent of excitation laser intensity, fluorophore concentration, and photobleaching compared to fluorescence intensity imaging techniques. Time-gated fluorescence lifetime imaging microscopy (FLIM) can provide high resolution and high imaging frame during mature FLIM methods. An abstract time-gated FLIM model was given, and important temporal parameters are shown as well.

Aiming at different applications of steady and transient fluorescence processes, two different operation modes, timing and lifetime computing algorithm are designed. High resolution and high frame can be achieved by one-excitation one-sampling mode and least square algorithm for steady imaging applications. Correspondingly, one-excitation two-sampling mode and rapid lifetime determination algorithm contribute to transient fluorescence situations.

Addresses: [Liu, Chao; Wang, Xinwei; Zhou, Yan; Liu, Yuliang] Chinese Acad Sci, Inst Semiconductors,

Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semiconductors, Optoelect Syst Lab,


E-mail Addresses: lcphs820@gmail.com

ISSN: 1537-744X

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Record 468 of 495

Title: Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO2 Nano-Bowl Photonic Crystal by Nanosphere Lithography

Author(s): Zheng, HY (Zheng, Haiyang); Wu, K (Wu, Kui)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 7 Pages: Q51-Q53 DOI:

10.1149/2.001307ssl Published: 2013



Abstract: The InGaN-based light-emitting diodes (LEDs) incorporating SiO2 nano-bowl photonic crystal

(SNPC) arrays with different periods onto the indium-tin oxide (ITO) layers have been fabricated using nano-sphere lithography (NSL). A monolayer of self-assembled nano-spheres has served as a hard mold for pattern transfer to the SiO2 layer, leaving the ITO layer intact and free of etching damages. The LEDs with SNPC arrays have exhibited enhancement of the light output power (LOP) by 42% and reduction of the emission divergence angle by 22.5 degrees compared with the conventional LEDs. Their optical performances and mechanisms have been investigated with finite-difference time-domain (FDTD) simulations. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.001307ssl] All rights reserved.

Addresses: [Zheng, Haiyang; Wu, Kui] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol


[Wu, Kui] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab


Reprint Address: Zheng, HY (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting


E-mail Addresses: zhy168@semi.ac.cn

ISSN: 2162-8742

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Record 469 of 495

Title: Crystal growth of KPb2Cl5 by Bridgeman method with pressure control system

Author(s): Cheng, G (Cheng, Gang); Meng, XQ (Meng, Xiuqing); Shan, D (Shan, Dong)

Source: ZEITSCHRIFT FUR KRISTALLOGRAPHIE Volume: 228 Issue: 5 Pages: 228-231 DOI:

10.1524/zkri.2013.1554 Published: 2013



Abstract: empty set 15 mm Single crystals of potassium lead chloride (KPb2Cl5) have been grown by a novel modified Bridgman method under protect of N-2 and CCl4 with a pressure control system. It could make vacuum or protect atmosphere according to the need of raw materials composition and crystals growth. So the process of preparation of crystal would be simplified. Measurements of the transmission of crystal in the mid-infrared were also made.

Addresses: [Cheng, Gang; Meng, Xiuqing; Shan, Dong] Chinese Acad Sci, Inst Semicond, State Key Lab


Reprint Address: Cheng, G (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab


E-mail Addresses: chenggang@semi.ac.cn

ISSN: 0044-2968

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Record 470 of 495

Title: Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices

Author(s): Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Zheng, HY (Zheng, Haiyang); Zhang,

YY (Zhang, Yiyun); Cheng, Y (Cheng, Yan); Xie, HZ (Xie, Haizhong); Rao, LQ (Rao, Liqiang); Wei, TB

(Wei, Tongbo); Yang, H (Yang, Hua); Yuan, GD (Yuan, Guodong); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang,

Guohong)

Source: RSC ADVANCES Volume: 3 Issue: 27 Pages: 10934-10943 DOI: 10.1039/c3ra40794b

Published: 2013



Abstract: A thermal stress aided electroless etching (TSEE) process of epitaxial GaN on sapphire has been demonstrated experimentally and theoretically. The sapphire has been successfully separated from the epitaxial GaN by electroless etching assisted by the thermal peeling stress at the GaN/sapphire interface. ANSYS simulation indicates a sharp increase in peeling stress at the edge of the chip. The mechanism of the TSEE process has been elucidated in macro-and micro-interpretation in this paper, which is based on a charge transfer reaction model with a thermodynamic cycle and an Arrhenius equation. The influences of etching temperature (ET) and etchant concentration (EC) on the TSEE process were quantitatively analyzed based on experimental results. X-Ray Diffraction (XRD) and

Transmission Electron Microscopy (TEM) results show an improvement in the epitaxial GaN crystallinity with the TSEE process. Analysis of the mechanisms of the TSEE process will undoubtedly deepen our understanding of semiconductor etching and facilitate more potential applications.

Addresses: [Wang, Liancheng; Liu, Zhiqiang; Zhang, Yiyun; Cheng, Yan; Xie, Haizhong; Wei, Tongbo;

Yang, Hua; Yuan, Guodong; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond

Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Zheng, Haiyang] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing



[Rao, Liqiang] China Ship Res Acad, Huanding Energy Servicesenterprise, Beijing 102200, Peoples R

China.



E-mail Addresses: wanglc@semi.ac.cn

ISSN: 2046-2069

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Record 471 of 495

Title: Thermoelectric devices based on one-dimensional nanostructures

Author(s): Qi, YY (Qi, Yangyang); Wang, Z (Wang, Zhen); Zhang, ML (Zhang, Mingliang); Yang, FH

(Yang, Fuhua); Wang, XD (Wang, Xiaodong)


10.1039/c3ta01594g Published: 2013



Abstract: Compared with the bulk, one-dimensional (1D) nanostructural materials exhibit enhanced thermoelectric performance. The figures of merit for most bulk materials used in practical devices are close to 1. However, the values for 1D nanostructural materials have reached 2.5 from experiments and could exceed 10 from theoretical simulations. This review discusses popular thermoelectric materials and devices based on 1D nanostructures, including preparation of nanostructures and fabrication of thermoelectric devices. Measurement approaches and the related devices for testing the thermal conductivity of 1D nanostructures were presented. Three potentially hot topics associated with thermoelectric properties of 1D nanostructures were discussed.

Addresses: [Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Yang, Fuhua; Wang, Xiaodong] Chinese


Reprint Address: Qi, YY (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


E-mail Addresses: zhangml@semi.ac.cn; xdwang@semi.ac.cn

ISSN: 2050-7488

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Record 472 of 495

Title: Synthesis of WO3 nanostructures and their ultraviolet photoresponse properties

Author(s): Huo, NJ (Huo, Nengjie); Yang, SX (Yang, Shengxue); Wei, ZM (Wei, Zhongming); Li, JB (Li,

Jingbo)

Source: JOURNAL OF MATERIALS CHEMISTRY C Volume: 1 Issue: 25 Pages: 3999-4007 DOI:

10.1039/c3tc30527a Published: 2013



Abstract: Tungsten oxide (WO3) nanostructures such as nanowires, nanorod bundles and nanotube bundles are synthesized by a facile hydrothermal method. The ultraviolet (UV) photoresponse characteristics of devices containing these WO3 nanostructures are investigated for the first time and new photosensitive mechanisms involving both photo-generated electron-hole pairs and reversible electrochemical reactions are proposed. We find that h-WO3 nanowires with large specific surface areas and fewer defects exhibit excellent UV photoresponse properties with switch ratios (defined as

I-photo/I-dark) as high as 60, which is due to the existing large tunnels serving as channels and intercalation sites for mobile ions and active electrochemical reactions, and our findings provide a new family and more selectivity for UV photosensitive nanomaterials in the future.

Addresses: [Huo, Nengjie; Yang, Shengxue; Wei, Zhongming; Li, Jingbo] Chinese Acad Sci, Inst


Reprint Address: Huo, NJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices


E-mail Addresses: shengxueyang@semi.ac.cn; jbli@semi.ac.cn

ISSN: 2050-7526

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Record 473 of 495

Title: High-performance energy-storage devices based on WO3 nanowire arrays/carbon cloth integrated electrodes

Author(s): Gao, LN (Gao, Lina); Wang, XF (Wang, Xianfu); Xie, Z (Xie, Zhong); Song, WF (Song,

Weifeng); Wang, LJ (Wang, Lijing); Wu, X (Wu, Xiang); Qu, FY (Qu, Fengyu); Chen, D (Chen, Di); Shen,

GZ (Shen, Guozhen)


10.1039/c3ta10831g Published: 2013



Abstract: Ordered WO3 nanowire arrays on carbon cloth (WNCC) conductive substrates are successfully prepared by a facile hydrothermal method. The as-prepared samples were characterized by XRD, SEM

and TEM and directly functionalized as supercapacitor (SC) and lithium-ion battery (LIB) electrodes without using any ancillary materials such as carbon black or binder. The unique structural features endow them with excellent electrochemical performance. The SCs demonstrate high specific capacitance of 521 F g(-1) at 1 A g(-1) and 5.21 F cm(-2) at 10 A cm(-2) and excellent cyclic performance with nearly 100% capacity retention after 2000 cycles at a current density of 3 A g(-1). All-solid-state SCs based on the integrated electrodes are also presented, exhibiting high flexibility without obvious performance declination at different bending states. A high capacity of 662 mA h g(-1) after 140 cycles at a 0.28 C rate and excellent rate capabilities are also obtained for LIBs due to the unique structures of the integrated electrodes.

Addresses: [Gao, Lina; Wang, Xianfu; Xie, Zhong; Song, Weifeng; Chen, Di; Shen, Guozhen] Huazhong

Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R

China.

[Gao, Lina; Wang, Lijing; Wu, Xiang; Qu, Fengyu] Harbin Normal Univ, Coll Chem & Chem Engn, Harbin




Reprint Address: Gao, LN (reprint author), Huazhong Univ Sci & Technol, Sch Opt & Elect Informat,

Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

E-mail Addresses: wuxiang05@gmail.com; qufengyu@hrbnu.edu.cn; gzshen@semi.ac.cn

ISSN: 2050-7488

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Record 474 of 495

Title: High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

Author(s): Wang, C (Wang, Chao); Qian, L (Qian, Long); Xu, WY (Xu, Wenya); Nie, SH (Nie, Shuhong);

Gu, WB (Gu, Weibing); Zhang, JH (Zhang, Jianhui); Zhao, JW (Zhao, Jianwen); Lin, J (Lin, Jian); Chen, Z

(Chen, Zheng); Cui, Z (Cui, Zheng)


Published: 2013



Abstract: In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs

(sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented.

The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge

SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors

(TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of similar to 34 cm(2) V-1 s(-1) and on-off ratios of similar to 10(7) have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm(2) V-1 s(-1) and on-off ratios of up to 10(5). Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a V-dd of -5 V. This work paves the way for making printable logic circuits for real applications.

Addresses: [Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao,

Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion,

Printable Elect Res Ctr, SEID, Suzhou 215123, Jiangsu, Peoples R China.

[Wang, Chao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Chao] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

Reprint Address: Zhao, JW (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion,

Printable Elect Res Ctr, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R

China.

E-mail Addresses: jwzhao2011@sinano.ac.cn; zcui2009@sinano.ac.cn

ISSN: 2040-3364

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Record 475 of 495

Title: Laser beam shaping with an ellipsoidal lens

Author(s): Luo, DX (Luo, Daxin); Zhao, BQ (Zhao, Baiqin); Chen, XL (Chen, Xuelei)


Published: 2013



Abstract: This paper presents a semiconductor laser beam shaping system that can collimate the irradiance profile effectively by using an ellipsoidal lens. Geometrical optics analysis based on the ray tracing method is done and the formulas to calculate the shape of ellipsoidal lens are given. Both the theoretical and experimental result show that the laser beam system works effectively; the divergence angle is reduced to less than 1 in the fast-axial direction. By using epoxy resin, this shaper collimates a semiconductor laser beam and packages the laser diode (LD) at the same time, which simplifies the manufacturing process and greatly reduces the LD volume. Because of the small volume, low-cost, high rigidity and easy fabrication, the shaper is of great value in the field of semiconductor laser diode applications. (c) 2012 Elsevier GmbH. All rights reserved.

Addresses: [Luo, Daxin; Zhao, Baiqin; Chen, Xuelei] Chinese Acad Sci, Inst Semicond, Beijing 100190,

Peoples R China.

Reprint Address: Luo, DX (reprint author), Inst Semicond, 1 621,Jia 35, Beijing 100083, Peoples R

China.

E-mail Addresses: luodaxin@gmail.com

ISSN: 0030-4026

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Record 476 of 495

Title: Far infrared response of silicon nanowire arrays

Author(s): Fobelets, K (Fobelets, K.); Li, CB (Li, C. B.); Coquillat, D (Coquillat, D.); Arcade, P (Arcade, P.);

Teppe, F (Teppe, F.)


Published: 2013



Abstract: The reflection, transmission and absorbance spectra of silicon nanowire arrays ( NWAs), as a function of the length of the nanowires, are investigated in a wavelength range of 15 mu m < lambda <

200 mu m, using Fourier transform infrared spectroscopy in vacuum. The NWAs are fabricated using metal-assisted electroless chemical etching. The wire length is varied between 20 mu m and 140 mu m, which is of the same order of magnitude as the wavelength, and their spectra are compared to bulk Si. At high frequencies the absorbance spectra of the NWAs show molecular resonances due to adsorption of molecules involved in the fabrication process but also due to the oxide quality that wraps the nanowires and changes as a function of nanowire length. Transmission characteristics show an increasing shift in absorption band edge towards the far infrared for longer wires and a transition from specular to diffuse reflection at a nanowire length of approximately 60 mu m.

Addresses: [Fobelets, K.; Li, C. B.] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect

Engn, London SW7 2AZ, England.

[Li, C. B.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,

Peoples R China.

[Coquillat, D.; Arcade, P.; Teppe, F.] Univ Montpellier 2, CNRS, UMR 5221, Lab Charles Coulomb,

F-34950 Montpellier, France.

Reprint Address: Fobelets, K (reprint author), Univ London Imperial Coll Sci Technol & Med, Dept Elect &

Elect Engn, Exhibit Rd, London SW7 2AZ, England.

E-mail Addresses: k.fobelets@imperial.ac.uk

ISSN: 2046-2069

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Record 477 of 495

Title: Fiber Bragg grating soil-pressure sensor based on dual L-shaped levers

Author(s): Li, F (Li, Feng); Du, YL (Du, Yanliang); Zhang, WT (Zhang, Wentao); Li, F (Li, Fang)

Source: OPTICAL ENGINEERING Volume: 52 Issue: 1 Article Number: 014403 DOI:

10.1117/1.OE.52.1.014403 Published: JAN 2013



Abstract: A fiber Bragg grating (FBG) soil-pressure sensor based on dual L-shaped levers is proposed and demonstrated. Using dual L-shaped levers, the deformation of the diaphragm, which experiences the soil pressure, will be transferred to the longitudinal strain of the FBG. The theoretical analysis on the sensitivity of the proposed sensor is given. The sensor has been calibrated in the laboratory.

Experimental results show a good agreement with theoretical expectations. Furthermore, this soil-pressure sensor has been installed in an earth dam in Beijing, China. Drifting of the FBG wavelength has been collected in rainy days from May to July 2012. It has been found that the earth dam has an obvious change of internal stress in the rainstorm. (C) 2013 Society of Photo-Optical Instrumentation

Engineers (SPIE). [DOI: 10.1117/1.OE.52.1.014403]

Addresses: [Li, Feng; Zhang, Wentao; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,


[Li, Feng; Du, Yanliang] Shijiazhuang Tiedao Univ, Struct Hlth Monitoring & Control Inst, Shijiazhuang,

Peoples R China.

Reprint Address: Li, F (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing



ISSN: 0091-3286

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Record 478 of 495

Title: Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Author(s): Zhao, WJ (Zhao, Weijie); Ghorannevis, Z (Ghorannevis, Zohreh); Chu, LQ (Chu, Leiqiang);

Toh, ML (Toh, Minglin); Kloc, C (Kloc, Christian); Tan, PH (Tan, Ping-Heng); Eda, G (Eda, Goki)

Source: ACS NANO Volume: 7 Issue: 1 Pages: 791-797 DOI: 10.1021/nn305275h Published:

JAN 2013



Abstract: Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion in mono- to few-layer thickness regime. Molybdenum disulfide (MoS2) was recently found to exhibit indirect-to-direct gap transition when the thickness is reduced to a single monolayer. Emerging photoluminescence (PL) from monolayer MoS2 opens up opportunities for a range of novel optoelectronic applications of the material. Here we report differential reflectance and PL spectra of mono- to few-layer WS2 and WSe2 that indicate that the band structure of these materials undergoes similar indirect-to-direct gap transition when thinned to a single monolayer. The transition is evidenced by distinctly enhanced PL peak centered at 630 and 750 nm in monolayer WS2 and WSe2, respectively.

Few-layer flakes are found to exhibit comparatively strong indirect gap emission along with direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by a chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest a strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe2.

Addresses: [Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang; Eda, Goki] Natl Univ Singapore, Dept

Phys, Singapore 117542, Singapore.

[Eda, Goki] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore.

[Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang; Eda, Goki] Natl Univ Singapore, Graphene Res Ctr,

Singapore 117546, Singapore.

[Toh, Minglin; Kloc, Christian] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798,

Singapore.

[Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing


Reprint Address: Eda, G (reprint author), Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542,

Singapore.

E-mail Addresses: g.eda@nus.edu.sg

ISSN: 1936-0851

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Record 479 of 495

Title: The measurement of magneto-optical Kerr effect of ultrathin films in a pulsed magnetic field

Author(s): Chen, X (Chen, Xi); Qian, X (Qian, Xuan); Meng, KK (Meng, Kangkang); Zhao, JH (Zhao,

Jianhua); Ji, Y (Ji, Yang)

Source: MEASUREMENT Volume: 46 Issue: 1 Pages: 52-56 DOI:

10.1016/j.measurement.2012.05.014 Published: JAN 2013



Abstract: A Kerr rotation measurement system in a pulsed magnetic field (up to 11 T) was built to study magnetic properties of several ultrathin films. Our result shows that the Kerr rotation angle increases with the increasing wavelength of the incident light, while the difference between the spectras of Fe and

CoFeAl is attributed to plasma resonance. We also studied the dynamic properties of the magnetic films: while ferromagnetic materials (Fe, CoFeAl, MnAs and CoMnAl) show quasi-static behavior in the time-scale of a few 100 mu s, diamagnetic material GaAs shows time-dependent hysteresis. Crown

Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.

Addresses: [Chen, Xi; Qian, Xuan; Meng, Kangkang; Zhao, Jianhua; Ji, Yang] Chinese Acad Sci, Inst

Semicond, SKLSM, Beijing 100083, Peoples R China.

Reprint Address: Ji, Y (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing


E-mail Addresses: jiyang@semi.ac.cn

ISSN: 0263-2241

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Record 480 of 495

Title: Improved performance of dye-sensitized solar cells with TiO2 nanocrystal/nanowires double-layered films as photoelectrode

Author(s): Meng, XQ (Meng, Xiuqing); Wang, Y (Wang, Yan); Wang, ML (Wang, Meili); Tu, JL (Tu, Jielei);

Wu, FM (Wu, Fengmin)


Published: 2013



Abstract: A double-layered (DL) photoanode is fabricated based on TiO2 nanowire (NW) arrays coated by TiO2 nanocrystal (NC) films on their top. The highest efficiency of the obtained double-layered photoanode cells is similar to 4.67% with 8 mu m-long NW arrays and 6 mu m-thick NC films. This efficiency is much higher than that of the devices with the pure TiO2 NC films or the pure TiO2 NW arrays as electrodes due to the synergistic effect of the dye adsorption and the rapid electron transport of

NWs/NC structure.

Addresses: [Meng, Xiuqing; Wu, Fengmin] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED,


[Wang, Yan; Wang, Meili] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tu, Jielei] Yunnan Normal Univ, Solar Energy Res Inst, Kunming 650092, Yunnan Province, Peoples R

China.

Reprint Address: Meng, XQ (reprint author), Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED,


ISSN: 2046-2069

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Record 481 of 495

Title: Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

Author(s): Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Li, X (Li, Xiao); Guo, EQ (Guo,

Enqing); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu, Hongwei); Wang, GH (Wang,

Guohong)

Source: RSC ADVANCES Volume: 3 Issue: 10 Pages: 3359-3364 DOI: 10.1039/c2ra22170e

Published: 2013



Abstract: Electrical characteristics of p-, n-GaN/graphene junctions before and after nitric acid doping have been investigated. Acid treatment can significantly improve the junction conductance in both cases, which is advantageous for the light emitting diode (LED) to reduce the operating voltage. GaN-based

vertical LEDs incorporating graphene as transparent electrodes are further assembled and tested, showing significant improvement in forward electrical characteristics and light output power upon acid modification.

Addresses: [Wang, Liancheng; Zhang, Yiyun; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong]


China.

[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Dept Mech Engn, Key Lab Adv Mfg Mat Proc Technol, Beijing


[Zhu, Hongwei] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.



E-mail Addresses: spring@semi.ac.cn; hongweizhu@tsinghua.edu.cn

ISSN: 2046-2069

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Record 482 of 495

Title: High performance AlGaN/GaN power switch with Si3N4 insulation

Author(s): Lin, DF (Lin, Defeng); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Kang, H (Kang,

He); Wang, CM (Wang, Cuimei); Jiang, LJ (Jiang, Lijuan); Feng, C (Feng, Chun); Chen, H (Chen, Hong);

Deng, QW (Deng, Qingwen); Bi, Y (Bi, Yang); Zhang, JW (Zhang, Jingwen); Hou, X (Hou, Xun)

Source: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS Volume: 61 Issue: 1 Article

Number: 10101 DOI: 10.1051/epjap/2012120366 Published: JAN 2013



Abstract: We report the fabrication of AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate structure using Si3N4 insulator. The Si3N4 films were deposited by plasma enhanced chemical vapor deposition (PECVD) as the surface passivation, interlayer films and the gate dielectric. In comparison with Schottky-gate HEMTs, the gate leakage currents of MIS-HEMTs exhibited three orders of magnitude reduction. With similar device structures, the off-state breakdown voltage of MIS-HEMTs was 1050 V with a specific on-resistance of 4.0 m Omega cm(2), whereas the breakdown voltage and specific on-resistance of

SG-HEMTs were 740 V and 4.4 m Omega cm(2), respectively. In addition, the MIS-HEMTs exhibited little current slump in the pulsed measurements and possessed faster switch speed than Si MOSFET. We demonstrate that AlGaN/GaN MIS-HEMTs are promising not only for microwave applications but also for high power switching applications.

Addresses: [Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng,

Chun; Chen, Hong; Deng, Qingwen; Bi, Yang] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing


[Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong] Chinese Acad


[Wang, Xiaoliang; Zhang, Jingwen; Hou, Xun] ISCAS XJTU Joint Lab Funct Mat & Devices Informat,


Reprint Address: Lin, DF (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912,



ISSN: 1286-0042

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Record 483 of 495

Title: Structural, elastic, electronic and dynamical properties of Ba2MgWO6 double perovskite under pressure from first principles

Author(s): Shi, LW (Shi, Liwei); Wu, L (Wu, L.); Duan, YF (Duan, Y. F.); Hu, J (Hu, J.); Yang, XQ (Yang, X.

Q.); Tang, G (Tang, G.); Hao, LZ (Hao, L. Z.)

Source: EUROPEAN PHYSICAL JOURNAL B Volume: 86 Issue: 1 Article Number: 9 DOI:

10.1140/epjb/e2012-30584-1 Published: JAN 2013



Abstract: Ab initio calculations within the framework of density-functional theory employing the local

density approximation have been performed to study the structural, elastic, electronic and dynamical properties for cubic double perovskite Ba2MgWO6 under hydrostatic pressure. The calculated ground-state properties and compression curve are in good agreement with the available experimental results. Pressure-induced enhancements of elastic constants, aggregate elastic moduli, elastic wave velocities and Debye temperature are observed, without any softening behaviors. Upon compression, the fundamental indirect energy gap E-g(Gamma-X) first increases slightly and then monotonically decreases. A linear-response approach is adopted to derive the full phonon-dispersion curves and phonon density of states. Evolution with pressure of the zone-center phonon frequencies for Raman-and infrared-active modes is analyzed. A pressure-induced soft optically silent T-1g phonon mode is identified near the Gamma point, signifying a structural dynamical instability. Our calculated results reveal that, when the pressure is high enough, besides bond shortening, the W-O-Mg bond becomes nonlinear, resulting in octahedral tilting distortion and thus a slight departure from the ideal cubic symmetry.

Addresses: [Shi, Liwei; Wu, L.; Duan, Y. F.; Hu, J.; Yang, X. Q.; Tang, G.] China Univ Min & Technol, Sch

Sci, Dept Phys, Xuzhou 221116, Peoples R China.

[Shi, Liwei; Wu, L.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,

Peoples R China.

[Hao, L. Z.] China Univ Petr, Fac Sci, Qingdao 266555, Peoples R China.

Reprint Address: Shi, LW (reprint author), China Univ Min & Technol, Sch Sci, Dept Phys, Xuzhou 221116,

Peoples R China.

E-mail Addresses: liweishi@semi.ac.cn

ISSN: 1434-6028

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Record 484 of 495

Title: XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency

Author(s): Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Xu, QF (Xu, Qianfan); Yang, L (Yang, Lin)


10.1002/lpor.201200036 Published: JAN 2013



Abstract: The coupled-resonator-induced transparency (CRIT) effect in parallel-coupled double microring resonators (MRRs) has been widely studied, and various applications based on the CRIT have been demonstrated. As an application of the CRIT, we propose and demonstrate a directed logic circuit that can implement the XOR and XNOR operations. Two electrical signals applied to the two MRRs represent the two operands of the logical operations, and the operational results are represented by the output optical signal. As a proof-of-concept, the thermo-optic modulating scheme is employed with an operational speed of 10 kbps.

Addresses: [Tian, Yonghui; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst Semicond, State Key Lab


[Xu, Qianfan] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA.

Reprint Address: Yang, L (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated



ISSN: 1863-8880

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Record 485 of 495

Title: Ag nanoparticles preparation and their light trapping performance

Author(s): Bai, YM (Bai YiMing); Wang, J (Wang Jun); Yin, ZG (Yin ZhiGang); Chen, NF (Chen NuoFu);

Zhang, XW (Zhang XingWang); Fu, Z (Fu Zhen); Yao, JX (Yao JianXi); Li, N (Li Ning); He, HY (He

HaiYang); Guli, MN (Guli MiNa)


DOI: 10.1007/s11431-012-5010-7 Published: JAN 2013



Abstract: Ag nanoparticles were fabricated on Si substrates by radio-frequency magnetron sputtering and thermal annealing treatments. It was found that Ag nanoparticles are ellipsoid at low annealing temperature, but the axis ratio decreases with the increase of annealing temperature, and a shape

transformation from ellipsoid to sphere occurs when the temperature increases to a critical point. The experimental results showed that the surface plasmon resonances depend greatly on the nanoparticles'shape and size, which is in accordance with the theoretical calculation based on discrete dipole approximation. The results of forward-scattering efficiency (FSE) and light trapping spectrum (LTS) showed that Ag nanoparticles annealed at 400 degrees C could strongly enhance the light harvest than those annealed at 300 and 500 degrees C, and that the LTS peak intensity of the former is 1.7 and 1.5 times stronger than those of the later two samples, respectively. The conclusions obtained in this paper showed that Ag ellipsoid nanoparticles with appropriate size is more favorable for enhancing the light trapping.

Addresses: [Bai YiMing; Chen NuoFu; Yao JianXi; Li Ning; He HaiYang; Guli MiNa] N China Elect Power

Univ, Sch Renewable Energy Engn, Beijing 102206, Peoples R China.

[Bai YiMing; Chen NuoFu; Yao JianXi; Guli MiNa] New & Renewable Energy Beijing Key Lab, Beijing


[Bai YiMing; Yin ZhiGang; Chen NuoFu; Zhang XingWang; Fu Zhen] Chinese Acad Sci, Key Lab

Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang Jun] Chinese Acad Sci, Natl Engn Res Ctr Optoelect Devices, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Bai, YM (reprint author), N China Elect Power Univ, Sch Renewable Energy Engn,


E-mail Addresses: ymbai@semi.ac.cn

ISSN: 1674-7321

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Record 486 of 495

Title: High Efficiency Grating Coupler for Coupling between Single-Mode Fiber and SOI Waveguides

Author(s): Zhang, C (Zhang Can); Sun, JH (Sun Jing-Hua); Xiao, X (Xiao Xi); Sun, WM (Sun Wei-Min);

Zhang, XJ (Zhang Xiao-Jun); Chu, T (Chu Tao); Yu, JZ (Yu Jin-Zhong); Yu, YD (Yu Yu-De)


10.1088/0256-307X/30/1/014207 Published: JAN 2013



Abstract: A high efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide is designed by a formula method. Over 78.5% coupling efficiency (>-1.05dB) with 3dB bandwidth about

50nm for one grating coupler is obtained experimentally and this result is the highest one as far as we know. This grating coupler is CMOS compatible which needs only one etch-step and is designed for a standard SOI chip without any Bragg reflector or bottom reflector.

Addresses: [Zhang Can; Sun Jing-Hua; Sun Wei-Min; Zhang Xiao-Jun] Harbin Engn Univ, Coll Sci,

Harbin 150001, Peoples R China.

[Zhang Can; Xiao Xi; Chu Tao; Yu Jin-Zhong; Yu Yu-De] Chinese Acad Sci, Inst Semicond, State Key Lab





ISSN: 0256-307X

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Record 487 of 495

Title: The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique

Author(s): Qiao, YB (Qiao, Yanbin); Feng, SW (Feng, Shiwei); Xiong, C (Xiong, Cong); Ma, XY (Ma,

Xiaoyu); Zhu, H (Zhu, Hui); Guo, CS (Guo, Chunsheng); Wei, GH (Wei, Guanghua)

Source: SOLID-STATE ELECTRONICS Volume: 79 Pages: 192-195 DOI:

10.1016/j.sse.2012.07.007 Published: JAN 2013



Abstract: The thermal properties of AlGaAs/GaAs laser diode bars have been analyzed in detail by transient thermal technique based on the diode forward voltage method on the vertical and horizontal thermal conduction paths, respectively. On the vertical thermal conduction path, it is found that the

steady-state temperature rise of the central emitter among operated emitters has a linear relationship with the logarithm of the total operating current. The time constant determined for chip decreases with the total operating current, while the time constant determined for solder/heat sink interface and package remains almost constant. In addition, the effective thermal diffusivity of chip increases with total operating current. On the horizontal thermal conduction path, the time constant varies linearly with the distance increasing, and the effective thermal diffusivity remains almost constant. The results suggest that the thermal crosstalk between emitters increases with the total operating current. (C) 2012 Elsevier Ltd. All rights reserved.

Addresses: [Qiao, Yanbin; Feng, Shiwei; Xiong, Cong; Zhu, Hui; Guo, Chunsheng; Wei, Guanghua]

Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China.

[Ma, Xiaoyu] Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083,

Peoples R China.

Reprint Address: Feng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn,

Beijing, Peoples R China.

E-mail Addresses: shwfeng@bjut.edu.cn

ISSN: 0038-1101

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Record 488 of 495

Title: Automatic Morphological Measurement of the Quantum Dots Based on Marker-Controlled

Watershed Algorithm

Author(s): Xu, LL (Xu, Lulu); Lu, HX (Lu, Huaxiang)

Source: IEEE TRANSACTIONS ON NANOTECHNOLOGY Volume: 12 Issue: 1 Pages: 51-56 DOI:

10.1109/TNANO.2012.2229467 Published: JAN 2013



Abstract: In the field of material growth, the quantum dot (QD) image analysis is a fundamental tool. The main challenge is that such study is used to be made by nonautomatic procedures which are time consuming and subjective. We aim to implement an algorithm of automatic analysis of the QDs images.

In this frame, efficient QDs segmentation is prerequisite. In this paper, a fast and robust method for the visual segmentation of QDs image based on marker-controlled watershed transform is proposed.

According to the foreground markers and the boundary of the coarse partition, the watershed transform is utilized to accurately separate QDs. A next process is then implemented to filter the possible attached substrates based on the area-height distribution of the extracted QDs. Finally, almost all the QDs can be accurately and robustly extracted and thus their properties can be measured. The experimental results show that the proposed approach gives a good tradeoff between the easy usability and efficiency, execution time, and segmentation quality.

Addresses: [Xu, Lulu; Lu, Huaxiang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Xu, LL (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R

China.

E-mail Addresses: ll2lovely@semi.ac.cn; luhx@semi.ac.cn

ISSN: 1536-125X

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Record 489 of 495

Title: Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As

Author(s): Wang, HL (Wang HaiLong); Chen, L (Chen Lin); Zhao, JH (Zhao JianHua)

Source: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY Volume: 56 Issue: 1 Special

Issue: SI Pages: 99-110 DOI: 10.1007/s11433-012-4959-3 Published: JAN 2013



Abstract: In this review article, we review the progress made in the past several years mainly regarding the efforts devoted to increasing the Curie temperature (T (C)) of (Ga,Mn)As, which is most widely considered as the prototype ferromagnetic semiconductor. Heavy Mn doping, nanostructure engineering and post-growth annealing which increase T (C) are described in detail.

Addresses: [Wang HaiLong; Chen Lin; Zhao JianHua] Chinese Acad Sci, State Key Lab Superlattices &

Microstruct, Inst Semicond, Beijing 100083, Peoples R China.




ISSN: 1674-7348

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Record 490 of 495

Title: Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method

Author(s): Chen, T (Chen, Teng); Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Liu, T (Liu,

Tong); Wang, J (Wang, Jun); Xie, H (Xie, Hui)


015024 DOI: 10.1088/0268-1242/28/1/015024 Published: JAN 2013



Abstract: In this work, solar cells fabricated from 100% upgraded metallurgical grade (UMG) silicon refined by a novel metallurgical route have been investigated. Compared with Siemens mc-Si solar cells, the UMG mc-Si solar cells fabricated in the same process present higher open voltages and fill factors, together with low initial light-induced degradation due to the material properties. By secondary ion mass spectroscopy measurements, the UMG mc-Si solar cells show shallower and better single-side abrupt junctions, resulting in higher photoelectric conversion in the wave band from 400 nm to 750 nm as external quantum efficiency measurements demonstrated. Although higher impurity content limits the minority carrier diffusion length, leading to lower shot-circuit current density, the average efficiency of the

UMG-Si solar cells fabricated in standard production line is up to 16.55%, close to 16.69% of the reference solar cells. Furthermore, by an additional phosphorous gettering process, the mean efficiency of the UMG-Si solar cells increases to 16.68%, and the reverse characteristics of the corresponding cells have been significantly improved.

Addresses: [Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Liu, Tong; Wang, Jun; Xie, Hui] Chinese Acad


Reprint Address: Chen, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,


E-mail Addresses: zhaoyw@semi.ac.cn

ISSN: 0268-1242

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Record 491 of 495

Title: Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in

Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Author(s): Ji, D (Ji, Dong); Lu, YW (Lu, Yanwu); Liu, B (Liu, Bing); Liu, GP (Liu, Guipeng); Zhu, QS (Zhu,

Qinsheng); Wang, ZG (Wang, Zhanguo)

Source: SOLID STATE COMMUNICATIONS Volume: 153 Issue: 1 Pages: 53-57 DOI:

10.1016/j.ssc.2012.10.010 Published: JAN 2013



Abstract: Influences of the dielectric layer-induced interfacial charges on two-dimensional electron gases

(2DEGs) are theoretical calculated in thin-barrier Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs). A decrease of 2DEG mobilities limited by three main scattering mechanisms, including misfit dislocation, threading dislocation and interface roughness scatterings, is observed with increasing value of the density of interfacial charges. The results in this article can be used to design structures to generate higher mobility in Al2O3/AlGaN/GaN double heterojunction HEMTs. (C)


Addresses: [Ji, Dong; Lu, Yanwu; Liu, Bing] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R

China.

[Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing 100083,

Peoples R China.

Reprint Address: Lu, YW (reprint author), Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R

China.

E-mail Addresses: ywlu@bjtu.edu.cn

ISSN: 0038-1098

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Record 492 of 495

Title: A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-mu A threshold current and 80-mV SET voltage

Author(s): Fu, YC (Fu, Yingchun); Wang, XF (Wang, Xiaofeng); Zhang, JY (Zhang, Jiayong); Wang, XD

(Wang, Xiaodong); Chang, C (Chang, Chun); Ma, HL (Ma, Huili); Cheng, KF (Cheng, Kaifang); Chen, XG

(Chen, Xiaogang); Song, ZT (Song, Zhitang); Feng, SL (Feng, Songlin); Ji, A (Ji, An); Yang, FH (Yang,

Fuhua)


Pages: 173-177 DOI: 10.1007/s00339-012-7083-3 Published: JAN 2013



Abstract: In this paper,we fabricate a lateral phase change memory device composed of a Ge2Sb2Te5 nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only as etch mask for the fabrication of the GST NW, but also as sacrificial layer for the lift-off process, which makes it feasible to fully confine the GST NW in the metal electrode nanogap. Electrical characterization shows that the device has unprecedentedly low threshold current and SET voltage of only 16 mu A and

80 mV, respectively.

Addresses: [Fu, Yingchun; Wang, Xiaofeng; Zhang, Jiayong; Wang, Xiaodong; Chang, Chun; Ma, Huili;

Cheng, Kaifang; Ji, An; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


[Fu, Yingchun; Zhang, Jiayong; Ma, Huili; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, State Key Lab


[Chen, Xiaogang; Song, Zhitang; Feng, Songlin] Chinese Acad Sci, Shanghai Inst Microsyst & Informat

Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China.

Reprint Address: Yang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond


E-mail Addresses: ycfu@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 0947-8396

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Record 493 of 495

Title: Directed XOR/XNOR Logic Gates Using U-to-U Waveguides and Two Microring Resonators

Author(s): Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin)


10.1109/LPT.2012.2227307 Published: JAN 1 2013



Abstract: We propose and demonstrate a directed optical logic circuit, which can perform the XOR and

XNOR logical operations based on U-to-U waveguides and two microring resonators. Compared to the previous structure, no waveguide crossings exist in the proposed circuit, which is beneficial to reduce the insertion loss and crosstalk of the device. Two electrical signals representing the two operands of the logical operation are employed to modulate two microring resonators through the thermo-optic effect, respectively. The operation result is represented by the output optical signal. For proof of principle, XOR and XNOR operations at 10 kb/s are demonstrated.

Addresses: [Tian, Yonghui; Zhang, Lei; Yang, Lin] Inst Semicond, State Key Lab Integrated Optoelect,


Reprint Address: Tian, YH (reprint author), Inst Semicond, State Key Lab Integrated Optoelect, Beijing


E-mail Addresses: tianyh@semi.ac.cn; zhanglei@semi.ac.cn; lyang@semi.ac.cn

ISSN: 1041-1135

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Record 494 of 495

Title: Polarization division multiplexed photonic radio-frequency channelizer using an optical comb

Author(s): Wang, LX (Wang, Li Xian); Zhu, NH (Zhu, Ning Hua); Li, W (Li, Wei); Wang, H (Wang, Hui);

Zheng, JY (Zheng, Jian Yu); Liu, JG (Liu, Jian Guo)


10.1016/j.optcom.2012.08.054 Published: JAN 1 2013



Abstract: A polarization division multiplexed photonic radio-frequency (RF) channelizer based on an optical comb is proposed and numerically investigated. A flat optical comb with nine lines is generated using two cascaded Mach-Zehnder modulators. The input broadband signal is simultaneously multicast by the optical comb and its frequency-shifted duplicate. These two combs are polarization multiplexed, spectrally sliced by a Fabry-Perot etalon (FPE), polarization de multiplexed and then channelized by wavelength division multiplexers (WDMs). The key advantage of the proposed approach is that it releases the trade-off between the measurement range and accuracy of a conventional optical comb based channelizer by a factor of 2. The impact of the polarization misalignment, the capability of monitoring multi-frequency RF signals with different powers and the reconfigurability of the system are also evaluated. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Wang, Li Xian; Zhu, Ning Hua; Li, Wei; Wang, Hui; Zheng, Jian Yu; Liu, Jian Guo] Chinese


Reprint Address: Wang, LX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated


E-mail Addresses: lxwang@semi.ac.cn

ISSN: 0030-4018

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Record 495 of 495

Title: Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells

Author(s): Fan, YJ (Fan, Yujie); Han, PD (Han, Peide); Liang, P (Liang, Peng); Xing, YP (Xing, Yupeng);

Ye, Z (Ye, Zhou); Hu, SX (Hu, Shaoxu)


10.1016/j.apsusc.2012.10.117 Published: JAN 1 2013



Abstract: In this paper, a series of comparative etching experiments on preparing inverted pyramids of silicon solar cells have been carried out using tetramethyl ammonium hydroxide (TMAH) and potassium hydroxide (KOH) at different etchant concentrations and temperatures on a patterned (1 0 0) Si. These experiment results show that TMAH solution has higher undercut rate and lower (1 0 0) plane etch rate than KOH solution, and the (1 1 1)/(1 0 0) etch rate ratio of TMAH is two to three times that of KOH solution. Additionally, etch rate of SiO2 mask is an order of magnitude lower in TMAH than in KOH.

Besides, surface morphology analysis indicates that TMAH etching can obtain much higher quality inverted pyramids of sharp vertex, smooth (1 1 1) sidewall and uncontaminated surface than KOH etching, which makes TMAH etching samples show better antireflection properties. Finally, the minimum reflectivity of TMAH etching sample low as 1.8% is obtained for inverted pyramids covered with SiO2 reflectivity coating. So the study reveals that TMAH is more attractive for the preparation of inverted pyramids than KOH. (C) 2012 Elsevier B. V. All rights reserved.

Addresses: [Fan, Yujie; Han, Peide; Liang, Peng; Xing, Yupeng; Ye, Zhou; Hu, Shaoxu] Chinese Acad

Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Fan, YJ (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst

Semicond, 35A Qinghua E Rd, Beijing 100083, Peoples R China.

E-mail Addresses: fanyujie@semi.ac.cn

ISSN: 0169-4332

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