Proposal for samples for cross calibration and performance evaluation.
W.Vandervorst, A.Vantomme, IKS Leuven
Introduction
This objective of this activity is to provide a set of well characterized structures which
allow establishing a quantitative evaluation of the quantification accuracy and depth
resolution of the various set-ups, for a variety of ion beam analysis techniques
(RBS/channeling, PIXE, NRA, ERDA).
Samples will be prepared using standard process recipes/wafers from the
microelectronics industry and represent daily challenges in any semiconductor
environment. Structures will be prepared on 200 and 300 mm wafers, allowing to
provide identical samples to all facilities.
Sample description
Proposed structures and purpose
I.
SiGe/Si : quantification, depth resolution, (strain, relaxation?)
Different wafers with Si1-xGex (x=0,25, 0.45 and 0.54), maximally 10 nm thick.
Epitaxially grown on Si with/without epitaxial Si-cap (1-4 nm).
Cross calibrated with XRD, TEM, SE
II.
Thin metal films on SiO2.(quantification)
Typical layers would be ALD-grown TiN, TaN (2-5 nm) targeting the
determination of the stoichiometry Ti/N. Test for quantification accuracy and/or
depth resolution. Typical thickness ~ 5 nm, maximally 10 nm.
Cross calibrated with XRD, XPS
III.
High-k dielectrica on metal film/SiO2 (quantification + depth resolution)
SrxTiyOz (10-20 nm) on TiN (50nm) on SiO2. Test for quantification of light (O,
N) and heavy elements in complex stack.
IV.
Dopants in Si : sensitivity + depth resolution
Still to be defined but these can be
Si-epitaxial (uniformly doped with B, As) : typical 20-50 nm, ~5e19 at/cm3.
Monolayers of dopants (B, As) covered with 5 nm Si cap.
Cross calibrated with SIMS