Optical Universal Logic Gates based on Electro-Optic Effect of Lithium Niobate in Mach-Zehnder Interferometer 1,2 Santosh Kumar1, Ashish Bisht2, Angela Amphawan3 Photonics Lab, Department of Electronics & Communication Engineering, DIT University, Dehradun, Uttarakhand, 248009, India 3 InterNetWorks Research Laboratory, School of Computing, Universiti Utara Malaysia, Sintok, Kedah, 06010, Malaysia e-mail: 1santoshrus@yahoo.com,2mail2ashishbisht@gmail.com, 3angelaoptics@gmail.com Abstract: The paper demonstrates newly proposed optical universal logic gates which can be used as a basic building block in digital optical computers. The simulation results are provided through MATLAB and Beam propagation method. Keywords: Optical logic devices; Optical logic; Optical logic devices 1. Introduction Optical logic gates are the key components in optical combinational and sequential digital systems which take advantage of the propagation of light to accomplish logic functions [1–3]. Optical logic gates have potential applications for bit-error monitoring [4], address and payload separation [5]. Researchers have shown their interest in implementing optical XOR, OR and universal logic gates by using SOA-MZIs [6]. But the response time of gain saturation of a SOA-MZI limits its operation. In this paper the optical universal logic gate operation and a novel design is demonstrated using minimum number of LiNbO3 based MZIs, which reduces the complexity of optical circuits at great extent. The scheme depends on the electro-optic effect based MZI structures which provides very high data rates [7]. Also, utilizing at appropriate operating points low cross talk, high extinction ratio, low transition losses can be achieved [8]. 2. Design and Working Figure 1(a) shows the schematic diagram of the proposed NOR gate using two MZIs. An optical signal is given to the first input port of MZI1. The second output port of MZI1 is connected to the second input port of MZI2. The first output port of MZI2 (Output Port 2 in Fig. 1(a)) is the output port of interest and provides the output of the NOR logic gate. For proper switching of the optical signal, voltage signal X and Y are applied at the second electrode of MZI1 and MZI 2 respectively. The OptiBPM layout of NOR gate is shown in Fig. 2 (a). Fig. 1. (a) Schematic diagram of NOR gate using MZIs (b) Schematic diagram of NAND gate using MZIs. Three MZIs are required to implement the NAND gate as shown in Fig. 1 (b). The optical signal is provided to the first input port of MZI1 and MZI2. The second output port of MZI1 is connected to the first input port of MZI3 and the second output port of MZI 2 is connected to the second input port of MZI3. Here, the first output port of MZI3 (Output port 2 in Fig. 1 (b)) is acting as the output of NAND logic gate. For proper switching of the optical signal, voltage signal X is applied to the second electrode of MZI1 and voltage signal Y is applied to the second electrode of MZI2 and MZI3 respectively. The OptiBPM layout of NAND gate is shown in Fig. 2 (b). Fig. 2. (a) Layout diagram of NOR gate using MZIs (b) Layout diagram of NAND gate using MZIs. 3. Simulation Results and Discussion The MATLAB simulation results for the optical NOR and NAND logic gates are shown in Fig. 3 (a) and in Fig. 3 (b) respectively. The possible combinations of input signal X and Y are represented in first and second row respectively. The output of the optical logic gate is represented in third row. Fig. 3. (a) MATLAB simulation result of NOR gate (b) MATLAB simulation result of NAND gate. OptiBPM is further used to analyze the proposed structure. The OptiBPM simulation results for the optical NOR and NAND logic gates are shown in Fig. 4 (a) and in Fig. 4 (b) respectively. In the case of optical NOR gate, optical signal is obtained at first output port of MZI2 only when both the input signal X and Y attains 0 electrode voltages. Whereas in case of NAND gate, optical signal is not obtained at first output port of MZI3 only when both the input signal X and Y attains 6.75 electrode voltages. Here, electrode voltage 0V and 6.75V is considered as logic ‘0’ and logic ‘1’ for the proposed device respectively [6]. Fig. 4. (a) OptiBPM simulation results for optical NOR gate operation (b) OptiBPM simulation results for optical NAND gate operation. 4. Conclusion The optical NOR and NAND gate logic operations have been implemented using the cascaded MZI structures based on electro-optic effect of lithium niobate. The schematic and layout diagrams are provided. The results are obtained using the MATLAB simulation and verified through Beam Propagation Method. 5. References [1] [2] [3] [4] [5] [6] [7] [8] J. Hardy and J. 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