Ben-Gurion University of the Negev
Material Engineering
Name of the module: Electrical Properties of Semiconductors
Number of module: 563-1-5111
BGU Credits: 3
Course Description:
ECTS credits: 4
This is an introductory course devoted to the description of conducting properties
of semiconducting materials.. In the framework of the course the students will
learn the different physical models and approaches applied to the description of
these properties as well as approximations used in definition of important
characteristics of semiconductors.
The first part of the course is related to description of elements of the band theory
in solids. The relations of the band structure with the behavior of electrons are
considered.
The second part describes the electron and hole conductivity, explains the
significant characteristics of electrons and holes, including the definitions of
effective mass of the charge carriers, their mobility, and the temperature
dependence of conductivity and considers the links with the fine structure of
electron bands in semiconductors.
The third part is devoted to determination of kinetics of charge transfer in
semiconductors. The response of charge carriers on magnetic field and
illumination is discussed.
In the fourth part the applications of semiconductors are considered, contact effects
are described in real and reciprocal space. Several applications of diodes and
transistors are described.
In all parts of the course the results of the theory and the experimental data on the
properties of semiconductor materials are compared.
Academic year: 2012-2013
Semester: Autumn semester
Hours of instruction:3 hours per week
Location of instruction:
will be
defined
Language of instruction: Hebrew
Cycle: First cycle
Position: required course for
undergraduate students
(Specialization "Electronic
Materials", 3rd year of education) and
elective course for the rest of
undergraduate students (4th year of
education) in Materials Engineering
Aims of the module:
Department
Field
of
Education:
Engineering:
Materials
Physics
of
semiconductors, microscopic models
for description of the electrons,
mathematical
quantitative
tools
to
description
obtain
of
the
properties, comparison of theoretical
results with experimental data for
semiconductor materials, applications.
Responsible department: Materials
Engineering
General prerequisites: none
Grading scale:the grading scale would
be determined on a scale of 0 – 100 (0
would
indicate
failure
and
100
complete success), passing grade is
56.
Lecturer: Prof. David Fuks
Contact details: room 012, building
59
To introduce students to the basic principles of physics of semiconducting
materials based on the elements of quantum mechanics and to provide a general
explanation of the behavior of semiconductors in different thermal conditions,
and/or under the influence of external electromagnetic (light) and magnetic fields.
Students will learn the obligatory fundamental aspects of the applications of
physical and mathematical models to analysis of the nature of charge carriers
of the materials. The course will focus on the response of semiconductors on the
external fields as well as on the applications of these materials.
Objectives of the module:
Students would understand the impacts and effects in semiconductors on the basis
of the underlying physics and as a consequence of the behavior of the electronic
sub-system in materials.
Learning outcomes of the module:
On successful completion of the course the students should be able to:
1. Define and describe the behavior of electrons in solids in terms of
quantum mechanics.
2. Relate the specific features of the band structure with conductivity in
metals, semiconductors, and insulators.
3. Discuss and explain the conducting properties of intrinsic and extrinsic
semiconductor materials.
4. Compare the properties of p- and n-type semiconductors with respect to
applied external magnetic and electric fields.
5. Recognize the ways of application of semiconductor devices in the
electric circles and for sensing to light and with respect to chemical
environment.
Attendance regulation: attendance and participation in class is mandatory (at least
80%).
Office phone: 08-6461460
Email: fuks@bgu.ac.il
Office hours:
Monday, from 9 to 11 AM
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Ben-Gurion University of the Negev
Material Engineering
Confirmation:
the
syllabus
was
Teaching arrangement and method of instruction: lectures, which include the
confirmed by the faculty academic
examples for solving problems linked to the physical properties of materials.
advisory committee to be valid on
Assessment:
2012-2013.
Final Exam: 100%
Last update: 29.08.2012
Work and assignments: Exam consists of three numerical problems and two
theoretical questions
Time required for individual work: in addition to attendance in class, the students
are expected to do their assignment and individual work: at least 2 hours per week.
Module Content\ schedule and outlines:
1. Electrons in solids. Shrödinger equation, modeling of crystal potential
for electrons, energy levels, degeneration of states,
work function for electrons (3 hours)
2. Density of states for free electrons, statistics for electrons, Fermi energy. (3 hours)
3. Electrons in periodic potential, Formation of bands in solids, Reciprocal space.
number of states in a band, forbidden bands. (3 hours)
4. Brillouin zones. Occupation of states in the bands by electrons. Metals, insulators,
semiconductors. Overlapping of the bands. (3 hours)
5. Conductivity in metals and semiconductors. Electrons and holes.
Temperature dependence of conductivity. (3 hours)
6. Effective mass for electrons and holes. Mobility of charge carriers. (3 hours)
7. Donors and acceptors. Explanation of conductivity in semiconductors
with donors and acceptors in real and reciprocal space. (3 hours)
8. Fermi energy in semiconductors and its temperature dependence. (3 hours)
9. Hall effect and its applications. (3 hours)
10. Response of semiconductor on illumination. Electron-phonon interactions,
direct and non-direct band gaps. Sensing properties of semiconductors. (3 hours)
11. Excess of charge carriers, recombination, life time for electrons and holes,
length of diffusion. (3 hours)
12. Measurements of diffusion coefficient, mobility and lifetime of minority
charge carriers. (3 hours)
13. Formation of p-n junction, technologies to get the junction, principles of
work for diodes. Transistors and their application (3 hours)
Required reading:


Physics of semiconductor devices, S.M. Sze, Wiley-Interscience,
2nd edition, 1981.
Introduction to Solid State Physics, Ch. Kittel, John Wiley&Sons, 1972.
Additional literature:
Solid State Physics, N. W. Ashcroft, N. D. Mermin, Brooks Cole, 1st edition, 1976.
Semiconductor Device Fundamentals, Robert F. Pierret, Addison Wesley,
2nd edition, 1996.
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