Supporting Information
Electrically Conductive Anti-reflecting Nanostructure for Chalcogenide Thin-Film
Solar Cells.
Ji-Hyeon Park, Tae Il Lee, Sung-Hwan Hwang, Kyeong-Ju Moon and Jae-Min Myoung*
Department of Materials Science and Engineering, Yonsei University, Seoul, Korea
E-mail: jmmyoung@yonsei.ac.kr
Figure S1. X-ray diffraction spectrum of the GZO seed layer and its 45° tilted cross sectional
SEM image.
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2 μm
8 mM
Figure S2. 45° tilted cross sectional SEM image of Al-doped ZnO NRs grown under 8 mM of
Al(NO3)3 · 9H2O.
Figure S3. Growth rate of ZnO NRs with different concentrations of Al(NO3)3 · 9H2O from 0
to 6 mM at a fixed 28.5 mM of Zn(NO3)2 · 6H2O.
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Figure S4. (a) A bright field and (b) HRTEM images of a piece of Al-doped ZnO NR grown
at 6 mM of Al(NO3)3 · 9H2O.
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Figure S5. Raw and deconvoluted XPS spectra of O 1s from ZnO NRs grown under the
different concentration of Al(NO3)3 · 9H2O (a) 0 mM, (b) 2 mM, (c) 4 mM, and (d) 6 mM. OI is related to the loosely bound oxygen on the surface of the ZnO NRs belonging to specific
species, e.g., -CO, -OH. O-II is related to O2- in the oxygen deficient regions with in the
matrix of ZnO. O-III represents the XPS spectrum corresponding to Zn-O in the wurtzite
structure. O-IV represents the XPS spectrum corresponding to Al-O in the wurtzite structure.
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(a)
(c)
(b)
(d)
(e)
(f)
(g)
(h)
Figure S6. Zn 3d core level peak of ZnO NRs without 5 nm Ag layer with different
concentrations of Al(NO3)3 · 9H2O (a),(c),(e), and (g). The energy of the valance band edge
was determined by linear fitting. Zn 3d core level at the Ag/ZnO NRs interface, (b),(d),(f),
and (h) with different concentrations of Al(NO3)3 · 9H2O.
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