Junyi Zhu
Department of Physics, The Chinese University of Hong Kong
Tel: 56156153, Email: jyzhu@phy.cuhk.edu.hk
Academic qualification:
2003-2009 Ph.D., Materials Science and Engineering, University of Utah, Salt Lake City
1994-1998 B.S., Physics, Peking University, Beijing, China
Previous academic positions held :
2012- 2013 Postdoc fellow, University of Utah, Salt Lake City, UT.
2009 - 2012 Postdoctoral researcher, National Renewable Energy Lab, Golden, CO
Present academic position :
08/2013 – now:
Assistant professor, Physics Department, Chinese University of Hong Kong
Previous relevant research work :
First principles calculations of doping in conventional semicodncutors, surface and interfaces
science.
Publication records
Junyi Zhu, Feng Liu and Michaels Scarpulla, “Strain tuning of native defect populations: The
case of Cu2ZnSn(S,Se)4”, Appl. Phys. Lett. Matt. 2, 012110, (2014).
Anne K. Starace, Joongoo Kang, Junyi Zhu, Judith C. Gomez, Greg C. Glatzmaier, “One-Pot
Shear Synthesis of Gallium, Indium, and Indium–Bismuth Nanofluids: An Experimental and
Computational Study”, J. Nanotechnol. Eng. Med 4(4), 041004 (2014）.
S. Kahwaji, R. A. Gordon, E. D. Crozier, S. Roorda, M. D. Robertson, Junyi Zhu, and T. L.
Monchesky, “Surfactant-mediated growth of ferromagnetic Mn δ -doped Si”, Phys. Rev. B 88,
174419, (2013).
Joongoo Kang, Junyi Zhu, Calvin Curtis, Dan Blake, Greg Glatzmaier, Yong-Hyun Kim, and
Su-Huai Wei: “Atomically abrupt liquid-oxide interface stabilized by self-regulated interfacial
defects: The case of Al/Al2O3 interfaces”, Phys. Rev. Lett. 108, 226105 (2012).
Joongoo Kang, Junyi Zhu, Su-Huai Wei, Yong-Hyun Kim, and Eric Schwegler, Persistent
medium-range order in liquid Al1-xCux: The microscopic origins of a liquid-liquid phase
transition, Phys. Rev. Lett., 108, 115901 (2012).
Junyi Zhu, Su-Huai Wei, Tuning doping site and type by strain: Enhanced p-type doping in Li
doped ZnO, Solid State Communication 151, 1437 (2011).
Junyi Zhu, Feng Liu, G. B. Stringfellow, Su-Huai Wei, Strain-Enhanced Doping in
Semiconductors: Effects of Dopant Size and Charge State, Phys. Rev. Lett. 105, 195503 (2010).
Junyi Zhu, F. Liu, G. B. Stringfellow. Dual-Surfactant effect on enhancing different p-type
doping in GaP, Journal of Crystal Growth, 312, 2, 174, (2009).
Junyi Zhu, Feng Liu, and G. B. Stringfellow, Dual-Surfactant Effect to Enhance p-Type Doping
in III-V Semiconductor Thin Films, Phys. Rev. Lett. 101, 196103 (2008).
Y. Han, Junyi. Zhu, Feng Liu, Shao-Chun Li, Jin-Feng Jia, Yan-Feng Zhang, and Qi-Kun Xue,
Coulomb Sink: A Novel Coulomb Effect on Coarsening of Metal Nanoclusters on
Semiconductor Surfaces, Physics Rev. Lett. 93, 106102 (2004).
PATENT
Metallic Surfactant for Enhancing p- and n- Type Doping in III-IV Semiconductors, Feng Liu,
Gerald Stringfellow, Junyi Zhu (Application number: US20130203243).