LPCVD SiN covered with ALD alumina (EKL)
(Samples delivered in December 2015)
Overview of Samples
Fig.1. Box sent to BNL in this batch
Tested batch contains 10 samples: 5.1, 6.1, 7.1, 8.1, 5.2, 6.2, 7.2, 8.2, Si.15 and Si.25. LPCVD SiN
(40 nm or 200 nm thick) is grown on 525 μm thick Si substrate and then covered with ALD alumina:
15 nm or 25 nm. This time we want to investigate an ALD layer grown in a different machine. The
second digit in the numeration of samples refers to a thickness of ALD layer:
1: 25 nm
2: 15 nm
whereas the first digit is:
5:
6:
7:
8:
200 nm std SiN (refl)
40 nm std SiN (refl)
200 nm Si rich SiN (refl)
40 nm Si rich SiN (refl)
Samples Si.15 and Si.25 are ’’naked’’ Si pieces covered with ALD alumina, 15 and 25 nm thick,
respectively.
Deposition method of SiN.
Deposition method of alumina.