Dependence of dynamic magnetization and magneto-transport properties of FeAlSi
films with oblique sputtering studied via spin rectification effect
Supplementary Materials

Finite element method simulations on the current density j and field h
configurations
To elucidate the magnitude and directions of the current density and field distributions within
our films, finite-element simulations are performed using Ansoft HFSS to model the coupling
between our microstrip fixture and films. The measured conductivities  zz are used as
parameters in our simulations. Because  xx is not measureable due to the presence of a
capping SiO2 layer, a gradual decrease of 36% in  xx is assumed from 0 to 45 deg oblique
samples resulting from the possible anisotropy in resistivity due to oblique sputtering. The
simulation parameters for various films are given in Table. SI. Contributions to the first order
due to the anomalous Hall Effect and anisotropic magneto-resistance can be neglected in our
simulations, since these effects are only considered to the second order in our measured dc
voltages. Fig. S1 shows the current density distribution for 0 deg oblique FeAlSi (50 nm) film
at 2.9 GHz and 18 dBm power.
From Fig. S1, it is seen that the current density is strongest below the microstrip,
where our FeAlSi film resides. In this region, the current density dominantly flows in x
direction, since the z components cancel due to symmetry. Therefore, only jx is significant,
which is consistent with results from our angular measurements. Comparing the simulated
current density jx (at the centre of the film) across all oblique samples, we see that despite a
36% decrease in  xx postulated due to oblique deposition, jx remains relatively unchanged
with only a ~5% variation. Thus, our assumption of jx
1107 Am 2 is justified. Fig. S2
shows the simulated microwave magnetic field h distribution within the sample. Clearly, the
dominant contribution of h lies in the z-direction, with magnitudes which are consistent with
our experimental determination via FMR experiments performed with a Vector Network
Analyzer.
Oblique angle (deg)
 zz ( 105 1m 1 )
 xx ( 105 1m 1 )
jx ( 107 Am 2 )
0
6.48
6.48
1.65
17
6.48
6.09
1.63
27
6.07
5.70
1.55
39
6.48
5.32
1.57
42
5.85
4.93
1.47
45
6.40
4.54
1.49
Table SI. Simulation parameters and simulated microwave current magnitude j x at the
centre of the film.
Fig. S1. Direction (arrows) and magnitude (colour scale) of the current density distributions
for the 0 deg oblique FeAlSi film, as seen from top view.
Fig. S2. Direction (arrows) and magnitude (colour scale) of the microwave magnetic field
distributions for 0 deg oblique FeAlSi film, as seen from top view.

X-Ray Diffraction (XRD) results for various obliquely-sputtered FeAlSi (50 nm)
films
To quantify the structural changes due to oblique deposition, we performed XRD 2-Theta
scans for various oblique samples. As evidenced in Fig. S3 below, a shift of the (200)
peak is seen with increasing oblique angles, indicating that the lattice spacing is increased
from 2.0100 to 2.0177 angstroms as oblique angle increases from 0 to 45 deg.
Fig. S3. XRD 2-Theta scan results for various obliquely-deposited FeAlSi films, showing a
shift in the (200) peak.