Ben- Gurion University of the Negev
Materials Engineering
Name of the module: Optoelectronic
Materials
Number of module: 365-1-4891
BGU Credits 3
Course Description: The course introduces the basic concepts underlying the
ECTS credits: 4
operation of optoelectronic devices. During the course the physical phenomena
Academic year: every year
underlying the operation of light emitting diodes, solid state lasers, semiconductor
Semester: Fall semester
solar cells, and optical fibers will be presented. Furthermore, materials choice and
Hours of instruction 2013: Tuesday
device considerations will be revealed. Recent advances in the field are presented
08-11
at the last part of the course by presentations given by the students themselves.
Location of instruction: Will be
These presentations, as well as a written assay, are considered in the assessments
defined
of the students' grade.
Language of instruction: Hebrew (or
English if requested by students)
Aims of the module: Introduce the basic physical principles of optoelectronic
Cycle: B.Sc.
devices and the factors controlling their performance.
Position: Elective course for Materials
Objectives of the module: Introduce the basic principles of operation of
Engineering.
optoelectronic devices. Beyond understanding the basic principles, the student
Field
of
Education:
Materials
Engineering
should know the main factors concerning materials choice and basic device design
considerations.
Responsible department: Materials
Engineering
Learning outcomes of the module: On successful completion of the course, the
student should be able to:
General prerequisites: Students should
1.
Understand the basic physical optoelectronic phenomena including charge
complete the following courses before
generation and recombination, electro-luminescence and light amplification,
their registration to the module:
the photovoltaic effect, electromagnetism, light propagation in waveguides
Semiconductor devices (365-1—
and fibers.
4141)
Grading scale: the grading scale
2.
Describe and analyze working parameters of optoelectronic devices.
3.
Calculate the efficiency of semiconductor optoelectronic devices.
4.
Be familiar with recent trends in optoelectronics..
would be determined on a scale of 0 –
100 (0 would indicate failure and 100
complete success 0 to 100), passing
grade is 56.
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Ben- Gurion University of the Negev
Materials Engineering
Lecturer: Professor Nurit Ashkenasy
Attendance regulation: Attendance in class is mandatory (80% of classes).
Contact details: Building 59, room
Attendance in students seminars is mandatory (100% of classes).
11
Teaching arrangement and method of instruction: Lectures and exercises.
Office phone: 08-6472494
Email: nurita@bgu.ac.il
Office hours:
Assessment:
will be announced.
how the students will be assessed in the module
1.
Assignment table of content
10%
Module evaluation: at the end of the
2.
Seminar
45%
semester the students will evaluate
3.
Written assay
45%
the
module,
in order to draw
100%
conclusions, and for the university's
internal needs.
Work and assignments: The students are expected to follow classes by looking over
was
the lecture notes, and supplement by reading in the text –book of the course, as well
confirmed by the faculty academic
as complementary literature. The students will prepare a written assay (10 pages)
advisory committee to be valid on
and oral presentation (20 minutes) on an advanced topic related to the course
2012-2013.
outline.
Last update: February 5, 2013
Time required for individual work: in addition to attendance in class, the students
Confirmation:
the
syllabus
are expected to do their assignment and individual work: 1 h per week for the first
half of the semester, and 5 hours per week during the second part of the semester.
Module Content\ schedule and outlines:
1.
2.
3.
4.
5.
6.
Introduction: p-n junction, charge generation and recombination in
semiconductors (3h).
Solar cells: the photovoltaic phenomena, short circuit current, open
circuit voltage, photocurrent and diode characteristics the solar spectrum,
, the fill factor, solar cell efficiency, the equivalent circuit, basic device
architecture, hetero-junction and tandem cells (6h).
Light emitting diode (LED): electroluminescence principles, internal and
external yield, output spectral characteristics, modulation bandwidth,
surface and edge LED, double heterostructure, materials choice (4h).
Laser: light amplification, population inversion, the laser cavity, Einstein
relations, the lasing condition, threshold gain, spectral bandwidth and
laser modes, HeNe laser, basic SC laser device, the threshold current,
power and efficiency, single mode laser, advanced cavities (DFB, CCC
lasers, quantum well lasers (8h).
Optical fibers: light propagation, total internal reflectance, the wave
guide condition, light intensity distribution and fiber modes, the V
number, dispersion in waveguide and fibers, multimode and single mode
fibers, the GRIN fiber, signal attenuation, fiber fabrication (6h)
Advanced topics (students presentations) (9h)
Required reading: Optoelectronics and Photonics principles and applications - S. O.
Kasap
Additional literature: articles and journals in the field
* Learning material will be available to the students on the module's website (high-learn)/ library/
electronic documents available to BGU students.
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