Technical_Specifications_Bump_Bonding_V3_13

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ORGANISATION EUROPÉENNE POUR LA RECHERCHE NUCLÉAIRE
CERNEUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH
EDMS No.: 1263634
CERN/NA62 Project Document Ref.: 1263634
IT/3651/PH/NA62
The CERN/NA62 Project
Invitation to Tender
Technical Specification
Bump-bonded Si Pixel Assemblies for the CERN/NA62
Abstract
This technical specification concerns the supply of bump-bonded Si pixel
assemblies for the detector known as GigaTracKer (GTK) to be used in the
experiment NA62 at CERN.
Deliveries are foreseen over two years from placement of the contract.
March 2013
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Table of Contents
1.
1.1
1.2
2.
2.1
2.2
2.3
3.
3.1
3.1.1
3.1.2
3.1.3
3.1.4
3.2
3.3
4.
4.1
4.2
4.3
4.4
4.4.1
4.4.2
4.5
5.
INTRODUCTION ........................................................................................................................... 1
Introduction to CERN ....................................................................................................................... 1
Introduction to the NA62 Experiment and the GTK Detector .......................................................... 2
SPECIFICATION OF THE SUPPLY ........................................................................................... 3
Deliverables Included in the Supply ................................................................................................. 3
Items and Services Supplied by CERN ............................................................................................. 4
Options .............................................................................................................................................. 4
TECHNICAL REQUIREMENTS ................................................................................................. 5
Description of the Assembly Components ........................................................................................ 5
Sensor Specifications......................................................................................................................... 5
Read-out Chip Specifications ............................................................................................................ 8
Dummy components for the Pre-series............................................................................................ 11
Bump-bonded Assemblies ................................................................................................................ 11
Requirements for the Assembly Process ......................................................................................... 12
Safety Requirements
13
PERFORMANCE OF THE CONTRACT .................................................................................. 13
Delivery Schedule ........................................................................................................................... 13
Contract Follow-Up and Progress Monitoring ................................................................................ 14
Documentation Handling, Quality Control and Quality Assurance ................................................ 14
Tests to be carried out at the Contractors Premises ......................................................................... 14
Pre-series ........................................................................................................................................ 14
Production-series ............................................................................................................................ 15
Packing and Shipping ...................................................................................................................... 15
CERN CONTACT PERSONS ..................................................................................................... 15
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1.
INTRODUCTION
1.1
Introduction to CERN
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CERN, the European Organization for Nuclear Research, is an intergovernmental organization with
20 Member States1.
Its seat is in Geneva but its premises are located on both sides of the French-Swiss border
(http://cern.ch/fplinks/map.html).
CERN’s mission is to enable international collaboration in the field of high-energy particle physics
research and to this end it designs, builds and operates particle accelerators and the associated
experimental areas. At present more than 10 000 scientific users from research institutes all over the
world are using CERN’s installations for their experiments.
The accelerator complex at CERN is a succession of machines with increasingly higher energies.
Each machine injects the beam into the next one, which takes over to bring the beam to an even
higher energy, and so on. The flagship of this complex is the Large Hadron Collider (LHC) as
presented below:
Further information is available on the CERN website: http://cern.ch
1 The CERN Member States are currently Austria, Belgium, Bulgaria, the Czech Republic, Denmark, Finland, France, Germany,
Greece, Hungary, Israel*, Italy, the Netherlands, Norway, Poland, Portugal, Romania**, the Republic of Serbia*, the Slovak
Republic, Spain, Sweden, Switzerland and the United Kingdom.
* Associate Member State in the pre-stage to Membership
** Candidate for accession
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1.2
Introduction to the NA62 Experiment and the GTK Detector
The NA62 experiment is performed at the CERN Super Proton Synchrotron (SPS) accelerator. The
aim of NA62 is to investigate extremely rare kaon decays on a time scale of a few years to
accumulate
sufficient
statistics.
The
web
sites
http://cern.web.cern.ch
and
http://na62.web.cern.ch/NA62 can be consulted for more information on CERN and NA62.
A schematic layout of the experiment is shown in Fig. 1.
LAV:
Large Angle Photon Veto
SAV
Small Angle g Veto
Vacuum Tank
CHOD
Charged
Hodoscope
CHANTI
Charged
Particle
Veto
Target
CEDAR
Beam Pipe
Gigatracker
RICH
Decay Region: 65 m
LKr MUV
Straw
Tracker
Total Length: 270 m
Figure 1. Schematic layout of the NA62 experiment.
The GTK (Gigatracker) Detector is a core part of the NA62 experiment and consists of three
silicon pixel detector stations (GTK1, 2 and 3) mounted along the beam-line inside a vacuum tank
in a high radiation environment. The location of the Gigatracker detector inside the experiment is
shown by a red ellipse, and its expanded view can be found in Fig. 2.
The GTK stations will provide information on the particle trajectories and momentum, and also
allow for precise time tagging of each passing particle with a precision better than 200 ps per
station. Approximately 20 full-detector assemblies, compliant with the specifications, will be
required for the 3 year running time of the experiment.
Figure 2. Arrangement of the three GTK stations, represented by red rectangles, along the beamline. The blue triangles
represent bending magnets, used to deflect the beam for momentum and angle measurement.
Each station is made of one hybrid silicon pixel detector consisting of one silicon sensor flip-chip
bonded to 2 x 5 front-end chips, as schematically shown in Fig. 3. The total size of the silicon
sensor is approximately 29 mm x 63 mm with a pixel cell size of 300 µm x 300 µm (enlarged pixels
of 400 µm x 300 µm are used in the neighbouring region between adjacent chips, as described
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below in more detail). The module design for each station will include also a support structure, the
connection to the cooling system as well as electrical and optical connections.
The GTK stations will be operated in vacuum and in a relatively high radiation environment;
current estimates expect up to 2 x 1014 1 MeV neq cm-2 per year. Therefore, it is foreseen to
regularly exchange the GTK stations to avoid performance degradation due to radiation damage.
The beam intensity distribution on one GTK assembly is shown in Fig. 3, where the highly nonuniform particle rate across the sensor is clearly visible.
Figure 3. Beam intensity distribution (in MHz/mm2) on a GTK station. One of the 10 read-out chips of the hybrid
bump-bonded assembly is schematically shown.
The expected running time of the experiment is approximately 100 days per year. Currently an
overall operation time for the NA62 experiment of 3 years is foreseen.
Whilst in a Lab, the temperature of the detector assembly can be as high as 70 0C, once installed in
the experimental area the cooling system has been designed to cool down the detector assembly at a
temperature of -20 0C.
Hereafter the full–area sensor bump-bonded to 10 read-out chip is called full-detector assembly,
while the smaller sensor bump-bonded to a single chip is called single-chip assembly.
2.
SPECIFICATION OF THE SUPPLY
The successful bidder (hereinafter referred to as the “Contractor”) shall deliver the items
(hereinafter referred to, in whole or in part, as the “Supply”) as defined in this technical
specification. The Supply shall originate from CERN Member States. Hereinafter the other party of
the contract will be referred as CERN (on behalf of the NA62 experiment)
2.1
Deliverables Included in the Supply
The Supply comprises two phases:
1) Pre-series: delivery of thinned and bump bonded assemblies made of dummy components.
The purpose of the pre-series is for the Contractor to develop the required expertise for the
chip thinning and bump bonding.
2) Production-series: delivery of final assemblies (full-detectors and single-chip assemblies
thinned and bump-bonded).
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The detailed list of batches to be delivered is shown in Table 1. Each delivered batch shall include a
full performance protocol as detailed in section 4.4. The production-series of final assemblies can
only start after CERN has accepted the successful completion of the pre-series. CERN reserves the
right to cancel the production-series, thinned to 100 m, if the quality of the Pre-series does not
comply with the technical specification.
Table 1 Summary of batches to be supplied by the Contractor.
Process step
1
Pre-series
2
Production series
Item to be supplied
6 Full-detector assemblies consisting of dummy components
with chips thinned to 100 m
15 Single-chip assemblies with chips thinned to 100 m
6 Full-detector assemblies with chips thinned to 100 m
15 Single-chip assemblies with chips thinned to 100 m
6 Full-detector assemblies with chips thinned to 100 m
Besides the deliverables mentioned above, the Contractor shall be in charge of:
 Procurement of all masks and tools as required for the Pre- and Production series.
 Procurement of dummy components (dummy sensors and dummy chips) for the Pre-series.
 Dicing of the sensors wafers.
 Dicing and thinning of the read-out chip wafers.
 Delivery to CERN with proper packaging and full risk insurance of all materials during
transportation to CERN.
2.2
Items and Services Supplied by CERN
CERN will supply the following items:
 Final sensors for the production series: a set of 12 to 15 four-inch high resistivity 200 µm
thick wafers on which several components have been structured. Each wafer contains one
final size sensor of dimensions 29.3 mm x 63.1 mm and three sensors matching a single
chip. For information: other structures are also present in the wafers, they are not relevant
for this delivery.
 Final read-out chips for the production series: a set of 5 to 7 wafers with read-out chips. The
wafers are 200 mm diameter with a native thickness of about 750 µm. Each wafer contains
approximately 60 read-out chips. For information: other structures are also present in the
wafers, they are not relevant for this delivery.
2.3
Options
The conditions of this tender should apply also to further purchases of similar type of assemblies in
batches as specified in Table 2 in the two years after the completion of the delivery of this supply.
Table 2 Optional batches that CERN may purchase with the same conditions.
15 Single-chip assembly with chips thinned to 100 m
6 Full-detector assembly with chips thinned to 100 m
15 Single-chip assembly with chips thinned to 200 m
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6 Full-detector assembly with chips thinned to 200 m
If the supplied assemblies comply with the technical specification, the total amount of full-detector
assemblies thinned to 100 m,that CERN expects to order, is of the order of 50.
3.
FOR THE OPTIONAL PURCHASES CERN WILL SUPPLY ADDITIONAL
SENSORS AND READ-OUT CHIP WAFERS.TECHNICAL REQUIREMENTS
The supply concerns the construction of bump-bonded silicon pixel assemblies comprising the
following steps: thinning of read-out chips, dicing of sensors and read-out chips, and bump bonding
of sensors and read-out chips. A pre-series, based on dummy components, is necessary to validate
the full process.
The technical specifications of the full-detector assembly and the single-chip assembly and their
components are described in the following sub-sections.
3.1
Description of the Assembly Components
The two components of the bump-bonded assembly are the sensor and the read-out chip.
In this sub-section are specified: a) the sensors, b) the read-out chip, c) the dummy components for
the Pre-series, and d) the final result, which is the bump-bonded assembly of the Production-series.
3.1.1
Sensor Specifications
In order to achieve the required timing precision it is necessary to operate the GTK sensors at high
over-depletion. Thus the sensor is expected to be biased with a voltage up to 700 V. In order to
maintain good current-voltage characteristics also at high bias voltage it is necessary to ensure
careful handling procedures and an excellent dicing quality during processing.
3.1.1.1 Sensor Wafers
The sensors are delivered as 4” high resistivity float-zone wafers (<100> or <111>). The wafer
thickness is (200±10) μm and the bow, after processing and measured on the sensor surface, is less
than 30 μm. The wafer back side is metalized to allow wire bonding contacts for applying reverse
bias to the sensor.
A schematic drawing of the wafer layout is shown in Fig.4. The sensor wafer layout contains one
final size sensor of dimensions 29.3 mm x 63.1 mm (called “full-sensor” that will be bump-bonded
to the 10 read-out chips to form a full-detector assembly), and three sensors to be bump-bonded to
a single read-out chip to form a single-chip assembly. Furthermore a number of pixelated and diode
test structures (not shown in the drawing) are also present in the sensor wafer.
A multi-guard ring structure is implemented around every sensor (full-detector and single-chip) in
order to ensure stable operation at relatively high voltage, therefore the distance between the last
active pixel edge and the sensor scribe line is about 1.2 mm.
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Figure 4. Schematic drawing of the 4'' sensor wafer layout. It contains one full-detector assembly and three singlechip sensors. Other pixelated and diode test structures are also present but not shown here.
The full layout of the sensor wafer will be provided from CERN to the Contractor.
Table 3 summarizes the sensor structures and their dimensions.
Table 3 Characteristics of the main sensor elements on a wafer.
Number
1
3
Structure
Full sensor:
o 18000 pixels (90 × 200 matrix)
o 27.0 × 60.8 mm2 active area
o 29.3 × 63.1 mm2 effective size on wafer
Single-chip sensor:
o 1800 pixels (45 × 40 matrix)
 3 types (A,B,C): one piece for each type
 Type A: 300 µm × 300 m pixels
 Type B: enlarged pixels in lateral columns (300 m × 400 m)
 Type C: as B but completely opened in the back side
o 13.5 × 12.0 (12.2 for B and C) mm2 active area
o 15.8 × 14.3 (14.5 for B and C) mm2 effective size on wafer
3.1.1.2 Pixel Layout
The sensors are composed of 300 m × 300 m pixel cells (Fig. 5), except for the inter-chip
regions, which incorporate 400 m × 300 m pixel cells (Fig. 6). Each pixel cell contains one bump
pad to connect it with the corresponding cell in the read-out chip.
In addition the guard ring of each sensor needs to be connected to the corresponding pads on the
read-out chip using bump bonds. The bump-bonding pads (see Figures 5 and 6) have octagonal
shape (26 m with 20 m opening in the passivation) and the bump pad centre is located at 50 m
from the pixel edges for the 300 m × 300 m pixel cells. The distance from the edge is 150 m for
enlarged pixels (300 m × 400 m cells)
The bump-bonding pads are arranged in a mirrored scheme on neighbouring columns (Fig. 7).
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300
300
50
50
20
Figure 5. Standard 300 µm x 300 µm pixel cell (quoted dimensions are in µm).
300
400
20
50
150
Figure 6. Elongated 300 µm x 400 µm pixel cell (quoted dimensions are in µm).
The full-detector assembly will accommodate 10 front-end chips arranged in 2 rows of 5 chips. The
pixel columns at the edges of the readout chips are connected to cells in the sensor with enlarged
dimensions. This allows maintaining a fully sensitive area over the full sensor size. A schematic
drawing of the implemented geometry is shown in Fig. 7 and 8.
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60.8 mm
27.0 mm
13.5 mm
13.5 mm
500 mm
100 mm
300 mm
500 mm
500 mm
300 mm
500 mm
300 mm
12.1 mm
12.2 mm
36.5 mm
Figure 7. Schematic layout of the full-detector assembly. Enlarged pixel cells (400 µm x 300 µm) are put in the border
region between neighboring read-out chips. Overall dimensions are in mm.
Figure 8. Pixel matrix arrangement in the border region between 4 neighboring read-out chips (corresponds to the
region indicated by the blue ellipse in Fig. 7). The elongated pixels column are clearly visible close to the vertical
orange dotted line. Distances between the center of the bump-bonding pads are quoted.
3.1.2
Read-out Chip Specifications
The read-out chip will be produced in a commercial 0.13 µm CMOS process. The chips will be
available on 200 mm wafers with native thickness of about 750 µm. Each chip will contain a matrix
of 40 x 45 pixels of 300 µm x 300 µm and wire bonding pads on one of the short edges. The total
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size of the front-end chip will be 12.030 mm x 20.400 mm. The full-detector assembly will consist
of one silicon sensor (29.3 mm x 63.1 mm) and two rows of 5 read-out chips bump bonded to the
sensor. Figure 9 shows a schematic drawing of the read-out chip for the Gigatracker (called
“TDCpix”). The target thickness of the final front-end chips for the GTK stations is 100 µm.At one
short edge of the chip, wire bonding pads allows for connecting the chip. The bonding pads are
arranged in two rows staggered with respect to each other. The wire bonding pad dimensions are 62
µm x ~200 µm in the bottom row and 62 µm x ~100 µm in the second row. The bump pad
connections are identical with the ones described in section 3.1.1.2. The GDS file of the top metal
and passivation layers will be provided by CERN to the Contractor.
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12.03012030
mm µm
Full chip:
Column 0
Pixel matrix: 12000 µm
Pixel = column * 45 + row
Pixel group = column * 9+ group
group 0 contains pixel 0
Total: 20.400 mm
Pixel matrix: 13500 µm
Full chip: 20400 µm
double column analog 0
double column analog 19
row 0
TDC 19
TL rx: 70 µm
TDC 0
Test pads 215x500=9 pads
EoColumn bias 1800 µm
hitArbiter & DLL, SM,
fine registers
& Coarse units, pixel
group FIFOs,
column FIFO
qchip 0 3000x500 qchip 1 3000x500 qchip 2 3000x500 qchip
3 3000x500
qchip & qconfig
3 3000x500
dll_clk_fanout 119000 x 72
calfan_out 11900 x 72
config 11900 x 292
PLL & 4 x Serializer & clk divider 8400 x 500 Bgdig&temp
BGana
1400x300
IO row 12000 x 400 (158 pads)
1500x300
IO row
Figure 9. Schematic drawing of the basic blocks (with overall dimensions: 12.030 x 20.400 mm 2) of the TDCpix readout chip.
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3.1.2.1 Chip Thinning
Material budget constraints necessitate a thinning of the read-out chips to 100 µm. One essential
requirement for completing the Pre-series will be the Contractors capability to successfully perform
the read-out chip thinning.
3.1.3
Dummy components for the Pre-series
The dummy components should present all the mechanical and dimensional characteristics of the
sensor and the read-out chip to demonstrate successful handling, thinning and bump bonding.
3.1.3.1 Dummy Sensor Specifications
The dummy sensors shall be diced from a 200 m silicon wafer.
The dummy sensors shall have:

the same dimensions as the final sensors (29.3 x 63.1 mm),

the same pixel matrix as described in sub-section 3.1.1.2,

bump-bonding pads with the same geometry as described in sub-section 3.1.1.2.
3.1.3.2 Dummy Read-Out Chip
The dummy read-out chip should be thinned to 100 m from a silicon wafer having an original
thickness of 200 m or more.
The dummy read-out chips shall have:

Identical bump bonding pads then the ones described for the dummy sensors.

The same dimensions as the final sensors (12.030 mm x 20.400 mm) including the little
extra length sticking out from the dummy sensor.
The Contractor shall propose and implement a pattern of daisy-chain connections among predefined
bump pattern to check the bump-bonding yield. On the structure a set of pads located on the
periphery of the dummy read-out chip should be envisaged to allow the wire bonding. The
connection and the pads scheme shall be sent to CERN beforehand for approval.
3.1.4
Bump-bonded Assemblies
We refer to two types of bump-bonded assemblies: a) single-chip assembly as sketched in Fig. 10a); b) full-detector assembly as sketched in Fig. 10-b)
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b)
Figure 10. Schematic drawing of a single-chip assembly (a) and a full-detector assembly (b).
The sensor is polarized to 700 V with the ground voltage applied on the detector surface facing the
chip and the high level voltage (namely 700 V) on the back of the sensor. Due to leakage at the
edges of the sensor, a high level voltage (up to 700 V) can be present at the borders of the detector
surface facing the chips. This could cause a discharge on the chips followed by the destruction of
the chips themselves. This effect should be circumvented by protecting the surface of the detector
facing the chips.
3.2
Requirements for the Assembly Process
These requirements are common to both assembly types, single-chip and full-detector:
 Bump bonding of silicon sensors to front-end chips with a pixel size of 300 µm x 300 µm
and a bump pad of octagonal shape of 10 µm apothem (opening in the passivation).
 The arrangement of the bump pads should follow the scheme presented in Figure 7 and 8.
 The standoff height between chip and sensor after bump connection should be
approximately 10-15 µm.
 The handling and processing of the sensors should ensure that the leakage current
characteristics allow a high voltage operation, without current breakdown and a total
leakage current of less than approximately 8 nA/cm2 at 20 °C and at the operating voltage of
700 V.
 The planarity of the external chip surface over the area corresponding to the sensor should
deviate from flatness by less than 30µm.
 The wire bonding pads on the short edge of the read-out chips have to be fully accessible
and wire-bondable after assembly and delivery.
 In order to comply with the physics requirements the yield of working pixels per final GTK
assembly should exceed 99%.
 When polarized with the operating voltage (700 V) the assembly should withstand the
voltage without discharge or breakdown.
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
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The assemblies must meet the requirements with an ambient temperature swinging between
70 °C and -20 °C.
Safety Requirements
The supply shall comply with CERN safety rules available at http://cern.ch/safety-rules.
In particular, the supply shall comply with the following CERN standards/codes, namely:
 CERN safety code C1 : 'ELECTRICAL SAFETY CODE'
 CERN safety instruction IS 23 : Criteria and Standard Test Methods for the Selection of
Electric Cables and Wires with Respect to Fire Safety and Radiation Resistance (2005)
 CERN safety instruction IS 24 : Regulations applicable to electrical installations (1990)
CERN safety instruction IS 41 : The use of plastic and other non-metallic materials at CERN
with respect to fire safety and radiation resistance (2005)
4.
PERFORMANCE OF THE CONTRACT
The following shall be accomplished:
1) Pre-series: successful fabrication of assemblies made with dummy components
demonstrating that the contractor has acquired the expertise and the technical skills for the
chip thinning and the bump bonding. This process will be ended with the delivery of the
pre-series and their corresponding test protocols followed by a written acceptance from
CERN.
2) Production-series: successful fabrication and delivery of final assemblies followed by CERN
approval based on the quality of the delivered assemblies and the test protocols.
Note: Step 2 can only start after CERN has approved in writing the successful assembly of the
dummy modules.
4.1
Delivery Schedule
Once the Contractor is notified of the award of the contract, he shall deliver the supply according to
the following delivery schedule:
1) Pre-series: to be accomplished in less than 26 weeks from the date at which the order
has been placed
2) Production-series:
 6 full-detector-assemblies and 15 single-chip-assemblies shall be delivered to
CERN within 13 weeks after the acceptance of the Pre-series
 The remaining fraction of the order in a subsequent period of 13 weeks
CERN and its representatives shall have free access during normal working hours to the
manufacturing or assembly sites, including any Subcontractor’s premises, during the contract
period. The place of manufacture may only be changed after written acceptance by CERN.
The Contractor shall supply, within one month from the start of the contract, a written programme
detailing the development and production schedules. The programme shall include preliminary
dates for inspections and tests.
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4.2
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Contract Follow-Up and Progress Monitoring
The Contractor shall assign a technical responsible for the execution of the contract and its followup throughout the duration of the contract.
The Contractor shall send a written progress report to CERN every 2 weeks until the completion of
the contract and at the delivery of the Pre-series.
This report shall include all the necessary information, and in particular the actual progresses in
comparison to scheduled progress.
4.3
Documentation Handling, Quality Control and Quality Assurance
The Contractor shall plan, establish, implement and adhere to a documented quality assurance
program that fulfils all the requirements described in this technical specification.
In addition to the requirements of section 3, the Contractor may propose any internationally
recognised design standard, subject to prior written acceptance by CERN. The Contractor shall state
his intended method of design including applicable codes as part of his bid. CERN reserves the
right to veto the use of certain codes or norms if it is considered that their application will not fulfil
this technical specification.
The Contractor shall plan, establish, implement and adhere to a documented quality assurance
program that fulfils all the requirements described in this technical specification.
4.4
Tests to be carried out at the Contractors Premises
CERN reserves the right to be present, or to be represented by an organization of its choice, to
witness any tests carried out at the Contractor's or his Subcontractors' premises. The Contractor
shall give at least 5 working days notice of the proposed date of any such tests.
4.4.1
Pre-series
CERN considers the development as accomplished when 6 full-detector assemblies are accepted
according to the validations and verifications hereafter specified. For each of the 6 full-detector
assemblies (dummies), the Contractor shall perform and document the following quality control
steps:
a) dimensional verifications of the dummy components before bump bonding (size, thickness,
flatness)
b) the X-ray pictures showing the quality of the bonds;
c) planarity measurements of the external chip surface over the area corresponding to the
sensor, or in other terms the area where the bump-bonds are, showing a deviation from
flatness smaller than 30µm;
d) verification of the electrical continuity for 99% of the bump bonds (using daisy-chain
connections)
e) at least 100 temperature cycles in a climatic chamber swinging from 70 °C to -20 °C with a
temperature gradient in the range of 3-5 °C /min to prove that the assemblies keep the
required planarity and bump-bonds continuity;
f) thickness verification (100µm) of the front-end chip with a Scanning Electron Microscope;
g) wire bond pads clean and undamaged.
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Production-series
The validation of the production items includes the following assessments, which are derived from
the technical specification in section 3.2
a) the X-ray pictures showing the quality of the bonds;
b) planarity measurements of the external chip surface over the area corresponding to the
sensor, or in other terms the area where the bump-bonds are, showing a deviation from
flatness smaller than 30µm;
c) no discharges and breakdowns after 24 hours under with the full bias voltage (700 V)
between sensor and chips and the leakage current remains within the requirements (8
nA/cm2 at 20 °C);
d) at least 100 temperature cycles in a climatic chamber swinging from 70 °C to -20 °C with a
temperature gradient in the range of 3-5 °C /min to prove that the assemblies keep the
required planarity and bump-bonds continuity;
e) thickness verification (100µm) of the front-end chip with a Scanning Electron Microscope;
f) wire bond pads clean and undamaged.
4.5
Packing and Shipping
The Contractor shall comply with professional and CERN’s regulations in matter of packing and
shipping, etc. The Contractor is responsible for the packing and, where included, the transport to
CERN. He shall ensure that the equipment is delivered to CERN without damage and any possible
deterioration in performance due to transport conditions.
Due to the relative fragility of the material and devices, a proper packing and delivery procedure
must be planned to ensure adequate protection against damage and loss during handling and
transportation.
The assemblies should be packed in suitable antistatic protection boxes, properly labelled with the
required unique information, and clearly marked as fragile. All the material must be handled in a
sufficiently clean environment in order to preserve all its characteristics, and to proceed to the
following phases of the assembly of the GTK stations.
The batches for both the Pre-series and for all the production series are to be delivered to CERN.
The transport will be by a courier service to be agreed by CERN. The Contractor shall carry out all
the customs and other formalities for the importation of the material. CERN will provide the
Contractor any documentation reasonably needed to allow him to carry out the above obligations
5.
CERN CONTACT PERSONS
Persons to be contacted for technical matters:
Name/Department/Group
Mr. Flavio Marchetto
Tel-Fax
Tel:
+39 011 6707318
Cell.:
+39 3397622916
Fax:
+00390116699579
Email
Flavio.Marchetto@cern.ch
16
EDMS No.: 0000072124
/NA62 Project Document Ref.: 0000072124
IT/3651/PH/NA62
In case of absence:
Mrs. Roberta Arcidiacono
Tel:
+41 22 767 8098
Roberta.Arcidiacono@cern.ch
+41 76487 0931
Fax:
+41 22 767 8920
Persons to be contacted for commercial matters:
Name/Department/Group
Mr. Laslo Abel
Tel-Fax
Tel:
+41 22 767 9561
Fax:
+41 22 766 9911
Tel:
+41 22 767 6335
Fax:
+41 22 766 9912
Email
Laslo.Abel@cern.ch
In case of absence:
Mr. Dante Gregorio
Dante.Gregorio@cern.ch
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