Supporting information for “Effects of the Cu off-stoichiometry on transport
properties of wide gap p-type semiconductor, layered oxysulfide LaCuSO”
Yosuke Goto,1 Mai Tanaki,1 Yuki Okusa,1 Taizo Shibuya,2 Kenji Yasuoka,2 Masanori Matoba,1 and
Yoichi Kamihara1
1
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio
University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan
2
Department of Mechanical Engineering, Faculty of Science and Technology, Keio University,
Yokohama 223-8522, Japan
Table S1. Electrical transport properties of LaCuSO at 300 K.a
sample
 (cm)
S (VK-1)
nH (cm–3)
H (cm2V-1s-1)
reference
1.0  105
––
––
––
[1]
2.0  101
––
––
––
[2]
––
––
[3]
1.1 
102,b
1.3  101,c
polycrystalline bulk
LaCuSO
polycrystalline thin film
epitaxial thin film
(1.0 
89,b 50,c
1.3  105
150
––
––
[4]
1.8 
105
––
––
––
[5]
7.5  101
134
3.0  1015
9.4
[6]
6.7 
105
––
8.3  101
150
––
––
[7]
1.6  104
713
(2.0  1015)e
(2.0  10-1)e
[8]
~105
––
––
––
[9]
1.5  100
122
1.0  1019
5.0  10-1
[10]
––
––
––
[5]
8.0  103,f
LaCu1-SO
20d
101)d
(7.5  101)g
(4.7 
1013)e
(2.0 
10-1)e
present study
LaCu0.99SO
2.6  10–1
16
> 1019
< 100
present study
LaCu0.98SO
3.5  100
24
> 1019
< 100
present study
8.2  10–1
24
> 1019
< 100
present study
(5.3  100)h
3
––
––
[4]
(7.5  10-2)i
––
––
––
[11]
1.2  10-1
––
––
––
[2]
LaCu0.97SO
polycrystalline bulk
Sr-doped LaCuSO
La0.9Ca0.1Cu0.9Ni0.1S
O
La0.97Sr0.03CuSO
polycrystalline thin film
5.0  10-2
44
2.7  1020
4.7  10-1
[8]
Sr-doped LaCuSOg
polycrystalline thin film
3.8  100
40
––
––
[7]
Electrical resistivity (), Seebeck coefficient (S), Hall carrier concentration (nH), and Hall mobility
(H).
b
Sintered at 800 C for 6 h.
c
Sintered at 900 C for 6 h.
a
Sintered at 900 C for 40 h.
The nH was estimated assuming H is 0.2 cm2V-1s-1.
f
Nominal Cu deficiency is 0.5 mol%.
d
e
Nominal Cu excess is 1.5 mol%.
h
Nominal Sr content is 5 mol%.
i
Nominal Sr content is 30 mol%.
g
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