Supplementary Material
Evolution of the electronic structure of C60/LSMO interface
Haipeng Xie1, Dongmei Niu1,, Lu Lyu1, Hong Zhang1, Yuhe Zhang1, Peng Liu1,
Peng Wang2, Di Wu2, Yongli Gao1, 3, *
1
Institute of Super-Microstructure and Ultrafast Process in Advanced Materials,
School of Physics and Electronics, Central South University, Changsha, Hunan
410083, China
2National
Laboratory of Solid State Microstructures and Department of Physics, Nanjing
University, Nanjing 210093, China
3
Department of Physics and Astronomy, University of Rochester, Rochester, NY
14627, USA
E-mail address: mayee@csu.edu.cn, ygao@pas.rochester.edu
To find an independent evidence for the p-doping of the C60 film by oxidization,
we measured the UPS spectra of an 8 nm fullerene film evaporated on MoS2 before
and after 2 hours of oxygen exposure at pressure of 1×10-2 mbar. MoS2 is chosen
because it is inert to oxygen exposure. After the oxygen exposure, the second electron
cutoff edge and the HOMO onset shift toward low binding energy (about 0.04~0.05
eV). As shown in Fig. S1 oxygen exposure does have a p-type doping effect.
FIG. S1. UPS spectra of C60/MoS2 measured before and after oxygen exposure. (a)
Cut-off Region, (b) HOMO Region.