SemiconNano2015, Hsinchu, Taiwan, September 6-September 11 2015
Submission Format for SemiconNano2015
(Title in 18-point Times font)
Jen-Inn Chyi
National Nano Device Laboratories, Narlabs, Taiwan
Email address: xxx@xxx.xxx
Wen-Kuan Yeh, Jia-Min Shieh, and Guo-Wei Huang
National Nano Device Laboratories, Narlabs, Taiwan
Begin abstract text. Please write a short summary of a few sentences as the first
paragraph of text. References [1, 2] can go on the second page.
After the short summary, use the rest of this page and the second page to include some
more details. Please stick to the format as given so that the abstract booklet looks nice.
Apologies for those who don’t like Word or its delightful equation editor
P  
S
x  y  z 3 dxdy
V   R m
(1)
but we think it is the most widely used package! We will assemble all the abstracts and
produce a PDF format abstract booklet for delegates and web publication.
SemiconNano2015, Hsinchu, Taiwan, September 6-September 11 2015
Continue text on second page if needed.
Figure 1
Double alignment MEIS 2D data (100 keV H+ incident along [2-1-11]) for MnSb(0001)(2×2)-GaAs(111)B, showing <4-2-21> and <2-1-11> blocking dips with strong Sb and
Mn edges, plus weak Ga edge.
References
[1]
P.A. Bone, J.M. Ripalda, G.R. Bell and T.S. Jones, Surf. Sci. 600 (2006) 973.
[2]
A. Wendt and R. Duvall, Political Theory 36 (2008) 607.
[3]
P. Halevi, Phys. Rev. B 77 (2010) 167772.