Jeremy Allam
April 2nd 2002
1 1
P
A T E N T S
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U B L I C A T I O N S
A N D
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O N F E R E N C E S
Patents
P1.
“Avalanche Photodetector”, J. Allam, F. Capasso and A. Y. Cho, US Patent 4755860
(issued 5/7/88).
P2.
[P-CB-011/14]
“Nonlinear optical device”, J. Allam and M. Wagner, European Patent 545595 (issued
9/6/93),
“Non-linear quantum dot optical device”, J. Allam and M. Wagner, US Patent 5291034
(issued 1/3/94).
P3.
[P-CB-027]
“Nanofabricated semiconductor device”, K. Ogawa and J. Allam, European Patent 626730
(issued 30/11/94),
“Nanofabricated device for multiple-state logic operation”, K. Ogawa and J. Allam, US
Patent 5485018 (issued 16/1/96).
P4.
[P-CB0-31]
“Improved metal-semiconductor-metal photodetector”, J. Allam, European Patent 651448
(issued 3/5/95),
“Metal-semiconductor-metal photodetector”, J. Allam, US Patent 5512763 (issued 30/4/96).
P5.
[P-CB-038/43]
“Semiconductor structures”, J. Allam, European Patent 757392 (issued 5/2/97).
US patent granted 2002 - details to be supplied.
P6.
[P-CB-057]
(Patent pending).
Jeremy Allam
April 2nd 2002
Selected Publications
Electron transport in multiple quantum wells:
S1.
“Resonant Zener tunnelling between valence-band and conduction-band quantum wells”,
J. Allam, F. Beltram, F. Capasso and A. Y. Cho, Applied Physics Letters 51(8), 24 August
1987, pp. 575-577.
Impact ionisation in multiple quantum wells:
S2.
S3.
“Near single carrier-type multiplication in a multiple graded well structure for a solid-state
photomultiplier”, J. Allam, F. Capasso, K. Alavi and A. Y. Cho, IEEE Electron Device
Letters EDL-8(1), January 1987, pp. 4-6.
"Role of satellite valleys in impact ionisation rate enhancement in multiple quantum well
avalanche photodiodes", I. K. Czajkowski, J. Allam, and A. R. Adams, Electronic Letters 26,
2 August 1990, pp. 1311-1312.
Bandstructure dependence of impact ionisation:
S4.
“Universal dependence of avalanche breakdown on bandstructures: choosing materials for
high-power devices”, J. Allam, Japanese Journal of Applied Physics 36 (3B), March 1997,
pp. 1529-1542. (TP-CB-188)
S5.
“Impact ionization in GaAs: Distribution of final electron states determined from hydrostatic
pressure measurements”, J. Allam, A. R. Adams, M. A. Pate and J. S. Roberts, Applied
Physics Letters 67(22), 27 November 1995, pp. 3304-3306.
“High pressure measurements and the “universal” scaling of impact ionisation with
bandstructure”, J. Allam and A. R. Adams, physica status solidi (b) 211(1), January 1999,
pp. 335-344. (TP-CB-292)
S6.
Ultrafast electro-optic sampling:
S7.
S8.
S9.
“Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate FET”,
J. Allam, N. Baynes, J. R. A. Cleaver, K. Ogawa, T. Mishima and I. Ohbu, Optical &
Quantum Electronics 28(7) (Special Issue on Optical Probing of Ultrafast Devices and
Integrated Circuits), July 1996, pp. 875-896.
“Ultrafast characterisation of quasi-one-dimensional in-plane-gate transistor integrated with
photoconductor switches”, K. Ogawa, J. Allam, N. Baynes, J. R. A. Cleaver, I. Ohbu and
T. Mishima, Applied Physics Letters 66(10), 6 March 1995, pp. 1228-1230.
“Mode-discriminating electro-optic sampling of coplanar waveguide”, N. Baynes, J. Allam
and J. R. A. Cleaver, IEEE Microwave & Guided Wave Letters 6(3), March 1996, pp. 126128.
High-speed transistors:
S10.
“Manufacturable PHEMT process for time-domain measurement of ultrafast transistors”,
C. Yuca, J. Allam, J. R. A. Cleaver and M. Missous, Proceedings of 6th International
Workshop on High Performance Electron Devices for Microwave and Optoelectronic
Applications (IEEE, 1998), pp. 7-12.
Optical properties of quantum dots:
S11. “Optical second-harmonic generation in laterally asymmetric quantum dots”, Jeremy Allam
and Mathias Wagner, Applied Physics Letters 60(22), 1 June 1992, pp. 2726-2728.
S12. “Anomalous excitation intensity dependence of photoluminescence from InAs selfassembled quantum dots”, J. Motohisa, J. J. Baumberg, A. P. Heberle and J. Allam, SolidState Electronics 42 (7-8), July-Aug 1998, pp. 1335-1339.
Jeremy Allam
April 2nd 2002
Journal Publications
(Papers J2, J6, J9, J16, J18, and J45 are conference proceedings whose content is duplicated in
other publications listed below. They are included here only for completeness.)
J1.
“New high speed long wavelength Al0.48In0.52As/Ga0.47In0.53As multiple quantum well
avalanche photodiodes”, K. Mohammed, F. Capasso, J. Allam, A. Y. Cho and
A. L. Hutchinson, Applied Physics Letters 47(6), 15 September 1985, pp. 597-599.
J2.
“New high speed long wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche
photodiodes”, K. Mohammed, F. Capasso, J. Allam, A. Y. Cho and A. L. Hutchinson,
Proceedings of 1985 International Electron Devices Meeting, December 1985, pp. 462-464.
“High speed InP/ Ga0.47In0.53As superlattice avalanche photodiodes with very low
background doping grown by continuous trichloride vapor phase epitaxy”,
V. D. Mattera, Jnr., F. Capasso, J. Allam, A. L. Hutchinson, J. Dick, J. M. Brown and
A. Westphal, Journal of Applied Physics 60(7), 1 October 1986, pp. 2609-2612.
“New avalanche multiplication phenomena in quantum well superlattices: Evidence of
impact ionisation across the band-edge discontinuity,” F. Capasso, J. Allam, A. Y. Cho,
K. Mohammed, R. J. Malik, A. L. Hutchinson and D. Sivco, Applied Physics Letters 48(19),
12 May 1986, pp. 1294-1296.
“Observation of novel step-like structure in the photocurrent and dark current of a
superlattice: charge collection by successive depletion of quantum wells”, J. Allam,
F. Capasso, M. B. Panish and A. L. Hutchinson, Applied Physics Letters 49(12), 22
September 1986, pp. 707-709.
“Observation of novel step-like structure in the photocurrent and dark current of a
superlattice: charge collection by successive depletion of quantum wells”, J. Allam,
F. Capasso, M. B. Panish and A. L. Hutchinson, Institute of Physics Conference Series No.
83, 1987, pp. 399-404.
J3.
J4.
J5.
J6.
J7.
J8.
J9.
J10.
J11.
J12.
J13.
J14.
“Impact ionisation across the band-edge discontinuity with very large ionisation rate ratio in
a superlattice avalanche photodiode with graded wells”, J. Allam, F. Capasso, K. Alavi and
A. Y. Cho, Institute of Physics Conference Series No. 83, 1987, pp. 405-410.
“Near single carrier-type multiplication in a multiple graded well structure for a solid-state
photomultiplier”, J. Allam, F. Capasso, K. Alavi and A. Y. Cho, IEEE Electron Device
Letters EDL-8(1), January 1987, pp. 4-6.
“Near single carrier-type multiplication in a multiple graded well structure for a solid-state
photomultiplier”, J. Allam, F. Capasso, K. Alavi and A. Y. Cho, Proceedings of 1986
International Electron Devices Meeting, 1986, pp. 614-617.
“Measurement of heterojunction band offsets by admittance spectroscopy: InP/
Ga0.47In0.53As”, D. V. Lang, M. B. Panish, F. Capasso, J. Allam, R. A. Hamm,
A. M. Sergent and W. T. Tsang, Applied Physics Letters 50(12), 23 March 1987, pp. 736738.
“Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical
vapour deposition”, F. Beltram, J. Allam, F. Capasso, U. Koren and B. Millar, Applied
Physics Letters 50(17), 27 April 1987, pp. 1170-1172.
“Molecular beam epitaxial growth of graded band-gap quaternary GaxAlyIn1-x-yAs multilayer
heterostructures on InP: Application to a novel avalanche photodiode with an ultrahigh
ionisation ratio”, K. Alavi, A. Y. Cho, F. Capasso and J. Allam, Journal of Vacuum Science
and Technology B5(3), May/June 1987, pp. 802-807.
“GaAs APD's and the effect of rapid thermal annealing on crystalline quality of GaAs grown
on Si by MBE”, N. Chand, A. Y. Cho, F. Capasso and J. Allam, Journal of Vacuum Science
and Technology B5(3), May/June 1987, pp. 822-826.
“Measurement of heterojunction band offsets in InP/ Ga0.47In0.53As by admittance
spectroscopy”, D. V. Lang, M. B. Panish, F. Capasso, J. Allam, R. A. Hamm, A. M. Sergent
and W. T. Tsang, Journal of Vacuum Science and Technology B5(4), Jul/Aug 1987,
pp. 1215-1220.
J15.
J16.
J17.
J18.
J19.
J20.
J21.
J22.
J23.
J24.
J25.
J26.
Jeremy Allam
April 2nd 2002
“Resonant Zener tunnelling between valence-band and conduction-band quantum wells”,
J. Allam, F. Beltram, F. Capasso and A. Y. Cho, Applied Physics Letters 51(8), 24 August
1987, pp. 575-577.
“Resonant Zener tunnelling of electrons across the band-gap between bound states in the
valence-band and conduction-band quantum wells in a multiple quantum well structure”,
J. Allam, F. Beltram, F. Capasso and A. Y. Cho, Journal de Physique 48(C-5), November
1987, pp.439-442 .
"Impact ionisation thresholds in Si and Ge under hydrostatic pressure and strain",
I. K. Czajkowski, J. Allam, M. Silver, A. R. Adams and M. A. Gell, IEE Proceedings 137
Pt. J(1), February 1990, pp. 79-87.
“Ionisation thresholds in silicon and germanium avalanche photodiodes under hydrostatic
pressure and strain”, J. Allam, I. K. Czajkowski, M. Silver, A. R. Adams and M. A. Gell,
IEEE Transactions on Electron Devices 36, 1989, pp. 2625-2626.
"Role of satellite valleys in impact ionisation rate enhancement in multiple quantum well
avalanche photodiodes", I. K. Czajkowski, J. Allam, and A. R. Adams, Electronic Letters
26, 2 August 1990, pp. 1311-1312.
"Strained-layer lasers and avalanche photodetectors", A. R. Adams, J. Allam,
I. K. Czajkowski, A. Ghiti, E. P. O'Reilly and W. S. Ring, Condensed Systems of Low
Dimensionality (Editor J. L. Beeby; NATO Advanced Science Institutes Series B, Physics;
Plenum, New York, 1990), Vol. 253, pp. 623-634.
"Evidence for impact ionisation via X and L valleys in GaAs from hydrostatic pressure
studies of avalanche breakdown", J. Allam, A. R. Adams, M. A. Pate and J. S. Roberts,
Institute of Physics Conference Series No. 112, 1991, pp. 375-376.
"Band-structure dependence of impact ionisation: bulk semiconductors, strained Si/Ge
alloys and multiple quantum well avalanche photodetectors", I. K. Czajkowski, J. Allam and
A. R. Adams, Proceedings of S.P.I.E. 1362, 1991, pp. 179-190.
"Dark currents in InAsxSbyP1-(x+y)/InAs photodiodes for 2. 5 µm operation", C. M. Telford,
J. Allam, A. R. Adams, A. S. M. Ali, W. J. Duncan, M. D. A. MacBean, Materials Science
and Engineering B9(1-3), 1991, pp. 371-374.
"Impact ionisation thresholds in GexSi1-x alloys and strained layers", I. K. Czajkowski,
J. Allam, A. R. Adams and M. A. Gell, Journal of Applied Physics 71(8), 15 April 1992,
pp. 3821-3826.
“Bandstructure dependence of impact ionisation in semiconductors from high pressure
studies”, J. Allam, High Pressure Research, vol. 9, 1992, pp. 231-242. (TP-CB-028) (Invited)
“Optical second-harmonic generation in laterally asymmetric quantum dots”, Jeremy Allam
and Mathias Wagner, Applied Physics Letters 60(22), 1 June 1992, pp. 2726-2728.
(TP-CB-034)
J27.
J28.
J29.
J30.
“Multistability at the tunneling-ballistic boundary in a mesoscopic device”, D. A. Williams,
H. H. Mueller, W. Chen, J. D. White, J. Allam, K. Nakazato, & J. R. A. Cleaver, in
Foundations of Quantum Mechanics in the Light of New Technology (Editors M. Tsukada,
S. I. Kobayashi, S. Kurihara and S. Nomura; Japanese Journal of Applied Physics Series 9,
Tokyo 1993). (TP-CB-038)
“Photoconductive sampling circuits using low-temperature GaAs interdigitated switches”,
J. Allam, K. Ogawa, J. White, N. de B. Baynes, J. R. A. Cleaver, I. Ohbu, T. Tanoue and
T. Mishima, in OSA Proceedings on Ultrafast Electronics and Optoelectronics, Vol. 14
(Editors Jagdeep Shah and Umesh Mishra; Optical Society of America, Washington, DC
1993), pp. 197-200. (TP-CB-050)
“Transport properties of dual quantum dots”, K. Ogawa, R. J. Blaikie, J. D. White, J. Allam,
H. Ahmed, Surface Science 305 (1-3), 20 March 20 1994, pp. 659-663. (TP-CB-064)
“Scaling characteristics of picosecond interdigitated photoconductors”, N. de B. Baynes,
J. Allam, J. R. A. Cleaver, K. Ogawa, I. Ohbu and T. Mishima, Institute of Physics
Conference Series No. 136, 1994, pp. 337-342. (TP-CB-067)
J31.
J32.
J33.
J34.
J35.
J36.
J37.
J38.
J39.
J40.
J41.
J42.
J43.
J44.
J45.
Jeremy Allam
April 2nd 2002
“Avalanche breakdown in GaAs/AlGaAs multilayers and alloys”, J. P. R. David, J. Allam,
J. S. Roberts, R. Grey, G. Rees and P. N. Robson, Institute of Physics Conference Series No.
136, 1994, pp. 721-726.
“Ultrafast characterisation of quasi-one-dimensional in-plane-gate transistor integrated with
photoconductor switches”, K. Ogawa, J. Allam, N. Baynes, J. R. A. Cleaver, I. Ohbu and
T. Mishima, Applied Physics Letters 66(10), 6 March 1995, pp. 1228-1230. (TP-CB-088)
“Monolithic integration of low-temperature-grown GaAs and high mobility 2DEG for
ultrafast photonic circuits”, J. Allam, K. Ogawa, A. Heberle, N. Baynes, I. Ohbu and
T. Mishima, in Ultrafast Electronics and Optoelectronics (OSA Technical Digest Series,
Optical Society of America, Washington, DC, 1995), Vol. 13, pp. 105-107. (TP-CB-102)
“Ultrafast characterisation of parasitics in in-plane-gate field-effects transistors”, K. Ogawa,
J. Allam, N. Baynes, J. R. A. Cleaver, I. Ohbu and T. Mishima, in Ultrafast Electronics and
Optoelectronics (OSA Technical Digest Series, Optical Society of America, Washington,
DC, 1995), Vol. 13, pp. 153-155. (TP-CB-103)
“Airbridges for slotline mode suppression in THz coplanar waveguide”, N. Baynes,
J. Allam, K. Ogawa, M. Ahmed and J. R. A. Cleaver,, in Ultrafast Electronics and
Optoelectronics (OSA Technical Digest Series, Optical Society of America, Washington,
DC, 1995), Vol. 13, pp. 55-57. (TP-CB-104).
“Avalanche breakdown in GaAs/AlGaAs multilayers and alloys”, J. P. R. David, J. Allam,
A. R. Adams, J. S. Roberts, R. Grey, G. Rees and P. N. Robson, Applied Physics Letters
66(21), 22 May 1995, pp. 2876-2878.
“Impact ionization in GaAs: Distribution of final electron states determined from hydrostatic
pressure measurements”, J. Allam, A. R. Adams, M. A. Pate and J. S. Roberts, Applied
Physics Letters 67(22), 27 November 1995, pp. 3304-3306.
“Universal relation between avalanche breakdown voltage and bandstructure in wide-gap
III-V semiconductors”, J. Allam and J. P. R. David, in Hot Carriers in Semiconductors
(Editors K. Hess, J. P. LeBurton and U. Ravaioli; Plenum Press, New York 1996), pp. 343346. (TP-CB-125)
“Ultrafast sampling of a dual-gate field-effect transistor”, N. Baynes, J. Allam and
J. R. A. Cleaver, in Ultrafast Processes in Spectroscopy (Editors O. Svelto, S. DeSilvestri
and G. Denardo; Plenum Press, New York, 1996), pp. 653-657. (TP-CB-134)
“Dynamics of trapping, trap-emptying and breakdown in LT GaAs”, J. Allam and
N. Baynes, in Ultrafast Processes in Spectroscopy (Editors O. Svelto, S. DeSilvestri and
G. Denardo; Plenum Press, New York, 1996), pp. 663-666. (TP-CB-135)
“Mode-discriminating electro-optic sampling of coplanar waveguide”, N. Baynes, J. Allam
and J. R. A. Cleaver, IEEE Microwave & Guided Wave Letters 6(3), March 1996, pp. 126128. (TP-CB-137)
“Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate FET”,
J. Allam, N. Baynes, J. R. A. Cleaver, K. Ogawa, T. Mishima and I. Ohbu, Optical &
Quantum Electronics 28(7) (Special Issue on Optical Probing of Ultrafast Devices and
Integrated Circuits), July 1996, pp. 875-896. (TP-CB-150)
“Ultrafast characterisation of in-plane-gate field-effect transistors: parasitics in laterally
gated devices”, K. Ogawa, J. Allam, N. D. Baynes, J. R. A. Cleaver, T. Mishima and
I. Ohbu, Optical & Quantum Electronics 28(7) (Special Issue on Optical Probing of Ultrafast
Devices and Integrated Circuits), July 1996, pp. 907-917.
“Photonic sampling of ultrafast electronic devices: bridging the measurement gap”,
J. Allam, in Extended Abstracts of 1996 International Conference on Solid State Devices
and Materials (Japan Society of Applied Physics, Tokyo, 1996), pp. 97-99. (TP-CB-167)
(Invited)
“Universal dependence of avalanche breakdown on bandstructure: choosing materials for
high-power devices”, J. Allam, in Extended Abstracts of 1996 International Conference on
Solid State Devices and Materials (Japan Society of Applied Physics, Tokyo, 1996),
pp. 767-769. (TP-CB-179)
J46.
J47.
J48.
J49.
J50.
J51.
J52.
J53.
J54.
J55.
J56.
J57.
J58.
Jeremy Allam
April 2nd 2002
“Universal dependence of avalanche breakdown on bandstructures: choosing materials for
high-power devices”, J. Allam, Japanese Journal of Applied Physics 36 (3B), March 1997,
pp. 1529-1542. (TP-CB-188)
“Anomalous excitation intensity dependence of photoluminescence from InAs selfassembled quantum dots”, J. Motohisa, J. J. Baumberg, A. P. Heberle and J. Allam, SolidState Electronics 42 (7-8), July-Aug 1998, pp. 1335-1339. (TP-CB-227)
“Semiconductor optoelectronic devices”, A. R. Adams, M. Silver, J. Allam, in
Semiconductors & Semimetals Vol. 55 (Academic Press, 1998) pp. 301- . (TP-CB-238)
“ ‘Average energy gap’ dependence of avalanche breakdown in semiconductors”, J. Allam,
in Computers & Devices for Communications (Editors S. Dhar and A. K. Das Gupta; Allied
Publishers, New Delhi, 1998), pp. 103-108. (TP-CB-239) (Invited)
“Manufacturable PHEMT process for time-domain measurement of ultrafast transistors”,
C. Yuca, J. Allam, J. R. A. Cleaver and M. Missous, Proceedings of 6th International
Workshop on High Performance Electron Devices for Microwave and Optoelectronic
Applications (IEEE, 1998), pp. 7-12. (TP-CB-290)
“High pressure measurements and the “universal” scaling of impact ionisation with
bandstructure”, J. Allam and A. R. Adams, physica status solidi (b) 211(1), January 1999,
pp. 335-344. (TP-CB-292) (Invited)
“Dark pulse formation in semiconductor lasers”, M. Kauer, A. P. Heberle, J. Allam,
J. Baumberg and J. R. A. Cleaver, submitted to IEEE Selected Issues in Quantum
Electronics (TP-CB-303)
“Quantitative electro-optic sampling for high-frequency characterisation of passive and
active devices”, J. Allam, C. Yuca, and J. R. A. Cleaver, Proceedings of 7th International
Workshop on High Performance Electron Devices for Microwave and Optoelectronic
Applications (EDMO 99) (IEEE 1999), pp…. (TP-CB-359) (Invited)
"Avalanche breakdown voltage in In0.53Ga0.47As", J. S. Ng, J. P. R. David, G. J. Rees and J.
Allam, submitted to Electronics Letters.
"Frequency-domain deconvolution of electro-optic probe response", C. Yuca, J. Allam and
J. R. A. Cleaver, submitted to IEEE Microwave Theory and Techniques.
"Electro-optic calibration of standard impedances for >100GHz vector network analysers",
C. Yuca, J. Allam and J. R. A. Cleaver, submitted to IEEE Microwave Theory and
Techniques.
"Integrated circuit for electro-optic sampling of T-gate transistors", C. Yuca, J. Allam and J.
R. A. Cleaver, submitted to IEEE Microwave Theory and Techniques.
"Simplified fabrication of 0.1m T-gate pHEMTs", C. Yuca, J. Allam and J. R. A. Cleaver,
submitted to J. Vac. Sci Technol.
Jeremy Allam
April 2nd 2002
Conference Presentations
C1.
C2.
C3.
C4.
C5.
C6.
C7.
C8.
C9.
C10.
C11.
C12.
C13.
C14.
“New high speed long wavelength Al0.48In0.52As /Ga0.47In0.53As multiple quantum well
avalanche photodiodes”, K. Mohammed, F. Capasso, J. Allam, A. Y. Cho, and
A. L. Hutchinson, 1985 IEEE International Electron Devices Meeting (IEDM 85)
(Washington, USA, December 1985).
“Superlattice avalanche photodiodes in Al0.48In0.52As / Ga0.47In0.53As: high speed operation
at 1.3µm”, J. Allam, K. Mohammed, F. Capasso, A. Y. Cho and A. L. Hutchinson, Institute
of Physics Solid State Physics Conference (Reading, U. K., December 1985).
“Impact ionisation across the band-edge discontinuity with very large ionisation rate ratio in
a superlattice avalanche photodiode with graded wells”, J. Allam, F. Capasso, K. Alavi and
A. Y. Cho, 13th International Symposium on GaAs and Related Compounds (Las Vegas,
USA, September 1986).
“Observation of novel step-like structure in the photocurrent and dark current of a
superlattice: charge collection by successive depletion of quantum wells”, J. Allam,
F. Capasso, M. B. Panish and A. L. Hutchinson, 13th International Symposium on GaAs and
Related Compounds (Las Vegas, USA, September 1986).
“Molecular-beam epitaxial-growth of graded band-gap quaternary AlxGayIn1-x-yAs multilayer
heterostructures on InP: application to novel avalanche photodiode with ultra-high ionisation
rate ratio”, K. Alavi, A. Y. Cho, F. Capasso and J. Allam, Seventh Workshop on Molecular
Beam Epitaxy (Cambridge, Massachusetts, USA, October 1986).
“On the use of rapid thermal annealing in improving crystalline quality of GaAs APD's
grown on Si by MBE”, N. Chand, A. Y. Cho, F. Capasso and J. Allam, Seventh Workshop
on Molecular Beam Epitaxy (Cambridge, Massachusetts, USA, October 1986).
“Impact ionisation across the band-edge discontinuity in superlattices and its application to
solid-state photomultipliers”, F. Capasso, J. Allam, A. Y. Cho, K. Mohammed, R. J. Malik,
A. L. Hutchinson and D. Sivco, Annual Meeting of Optical Society of America (Seattle,
USA, October 1986).
“Near single carrier-type multiplication in a multiple graded-well structure for a solid-state
photomultiplier”, J. Allam, F. Capasso, K. Alavi and A. Y. Cho, 1986 IEEE International
Electron Devices Meeting (IEDM 86) (Los Angeles, USA, December 1986). (Best Student
Paper Award)
“Trichloride VPE crystal growth of InP/In0.53Ga0.47As superlattice structures for avalanche
photodiode applications”, V. D. Mattera, F. Capasso, J. Allam, and A. L. Hutchinson,
Materials Research Society Fall Meeting (Boston, Massachusetts, USA, December 1986).
“Novel photocurrent multiplication and transport effects in InP/ Ga0.47In0.53As superlattice
structure grown by gas source molecular beam epitaxy”, J. Allam, F. Capasso, M. B. Panish
and A. L. Hutchinson, Institute of Physics Solid State Physics Conference (London, U. K.,
December 1986).
“Measurement of heterojunction band offsets in InP/In0.53Ga0.47As by admittance
spectroscopy”, D. V. Lang, M. B. Panish, F. Capasso, J. Allam, R. A. Hamm, A. M. Sergent
and W. T. Tsang, 14th Annual Conference on the Physics and Chemistry of Semiconductor
Interfaces (Salt Lake City, USA, January 1987).
“Resonant Zener tunnelling of electrons between valence- and conduction-band quantum
wells in a multiple quantum well structure”, J. Allam, F. Beltram, F. Capasso and
A. Y. Cho, Third International Conference on Modulated Semiconductor Structures (MSS
87) (Montpellier, France, July 1987).
“Multiple quantum wells for long-wavelength photodiodes”, J. Allam, Low Dimensional
Semiconductors Workshop (Oxford, U. K., October 1987).
“Resonant tunnelling in multiple quantum wells”, J. Allam, G. P. Witchlow and
E. P. O'Reilly, Institute of Physics Solid State Physics Conference (Bristol, U. K., December
1987).
-7-
C15.
C16.
C17.
C18.
C19.
C20.
C21.
C22.
C23.
C24.
C25.
C26.
C27.
C28.
C29.
C30.
Jeremy Allam
April 2nd 2002
“High pressure studies of impact ionisation thresholds in Si and Ge”, J. Allam,
I. K. Czajkowski and A. R. Adams, Institute of Physics Solid State Physics Conference
(Nottingham, U. K., December 1988).
“Impact ionisation thresholds in Si and Ge APD's”, J. Allam, I. K. Czajkowski and
A. R. Adams, Semiconductor and Integrated Optoelectronics Conference (SIOE 89)
(Cardiff, U. K., March 1989).
“Ionisation thresholds in Si and Ge avalanche photodiodes under hydrostatic pressure and
strain”, J. Allam, I. K. Czajkowski, M. Silver, A. R. Adams and M. A Gell, IEEE Device
Research Conference (DRC 89) (Cambridge, Massachusetts, USA, June 1989).
“Ionisation thresholds under hydrostatic pressure and strain: Si and Ge”, J. Allam, Impact
ionisation Workshop (London, U. K., September 1989).
“Hydrostatic pressure as a technique for studying impact ionisation”, I. K. Czajkowski,
J. Allam and A. R. Adams, Institute of Physics Solid State Physics Conference (Warwick, U.
K., December 1989).
“Resonant switching in a forward-bias multiple quantum well p-i-n diode”, J. Allam,
F. Beltram, F. Capasso and A. Y. Cho, Institute of Physics Solid State Physics Conference
(Warwick, U. K., December 1989).
“Band structure engineering for photodetectors”, J. Allam, I. K. Czajkowski and
A. R. Adams, Institute of Physics Meeting: Novel Applications of Low Dimensional
Structures (London, U. K., March 1990).
“Strained-layer lasers and avalanche photodetectors”, A. R. Adams, J. Allam,
I. K. Czajkowski, A. Ghiti, E. P. O'Reilly and W. S. Ring, NATO Advanced Research
Workshop on Condensed Systems of Low Dimensionality (Marmaris, Turkey , April 1990).
“The role of satellite valleys in ionisation rate enhancement in multiple quantum well
avalanche photodiodes”, I. K. Czajkowski, J. Allam and A. R. Adams, IEEE Device
Research Conference (DRC 90) (Santa Barbara, June 1990).
“Evidence for impact ionisation via X and L valleys in GaAs from hydrostatic pressure
studies of avalanche breakdown”, J. Allam, A. R. Adams, M. A. Pate and J. S. Roberts, 17th
International Symposium on GaAs and Related Compounds (Jersey, England, September
1990).
“Band-structure dependence of impact ionisation: bulk semiconductors, strained Si/Ge
alloys and multiple quantum well avalanche photodetectors”, I. K. Czajkowski, J. Allam and
A. R. Adams, SPIE International Conference on Physical Concepts of Materials for Novel
Optoelectronic Device Applications (Aachen, Germany, October 1990).
“Defect-assisted tunnelling currents in long-wavelength
2.3 µm InAsSbP/InAs
photodiodes”, C. M. Telford, J. Allam, A. R. Adams, A S. M. Ali, W. J. Duncan and
M. D. A. MacBean, European Materials Research Society Conference (Strasbourg,
November 1990).
“Bandstructure dependence of impact ionization in semiconductors from hydrostatic
pressure studies”, J. Allam, European High Pressure Research Group XXIX Annual
Scientific Meeting (Thessaloniki, Greece, October 1991). (TP-CB-028) (Invited).
“Multistability at the tunneling-ballistic boundary in a mesoscopic device”, D. A. Williams,
H. H. Mueller, W. Chen, J. D. White, J. Allam, K. Nakazato, and J. R. A. Cleaver, 4th
International Symposium on Foundation of Quantum Mechanics in the Light of New
Technology (ISQM-92) (Tokyo, Japan, August 1992). (TP-CB-038)
“Picosecond characterisation of LT GaAs for ultrafast photoconductors”, J. Allam,
N. Baynes, J. D. White, K. Ogawa, J. R. A. Cleaver, I. Ohbu, T. Tanoue and T. Mishima,
Institute of Physics Condensed Matter & Materials Physics Conference (Sheffield,
December 1992). (TP-CB-053)
“Photoconductive sampling circuits using submicron photoconductors for ultrafast device
characterisation”, N. Baynes, J. Allam, J. D. White, K. Ogawa, J. R. A. Cleaver, I. Ohbu,
T. Tanoue, and T. Mishima, Institute of Physics Condensed Matter & Materials Physics
Conference (Sheffield, December 1992). (TP-CB-054)
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C31.
C32.
C33.
C34.
C35.
C36.
C37.
C38.
C39.
Jeremy Allam
April 2nd 2002
“Photoconductive sampling circuits using low-temperature GaAs interdigitated switches”,
J. Allam, K. Ogawa, J. D. White, N. Baynes, J. R. A. Cleaver, I. Ohbu, T. Tanoue and
T. Mishima, Optical Society of America Topical Meeting on Ultrafast Electronics &
Optoelectronics, (San Francisco, USA, January 1993). (TP-CB-050)
“Transport properties of dual quantum dots”, K. Ogawa, R. J. Blaikie, J. D. White, J. Allam
and H. Ahmed, 10th International Conference on the Electronic Properties of TwoDimensional Systems (EP2DS-10) (Newport, USA, May 1993). (TP-CB-064)
“Scaling characteristics of picosecond interdigitated photoconductors”, N. Baynes, J. Allam,
J. R. A. Cleaver, K. Ogawa, I. Ohbu and T. Mishima, 20th International Symposium on
GaAs & Related Compounds (Freiburg, Germany, August 1993). (TP-CB-067)
“Avalanche breakdown in GaAs/AlGaAs multilayers and alloys”, J. Allam, J. P. R. David,
J. S. Roberts, R. Grey, G. Rees and P. N. Robson, 20th International Symposium on GaAs &
Related Compounds (Freiburg, Germany, August 1993).
“Monolithic integration of high-speed electron device and photoconductive switches for
ultrafast photonic sampling”, K. Ogawa, J. Allam, N. Baynes, J. R. A. Cleaver, I. Ohbu and
T. Mishima, Conference on Lasers & Electro-Optics (CLEO 94), (Anaheim, USA, May
1994). (TP-CB-078)
“Ultrafast polarisation-dependant and independent interdigitated photoconductors”,
N. Baynes, J. Allam, K. Ogawa, J. R. A. Cleaver, I. Ohbu and T. Mishima, Conference on
Lasers & Electro-Optics (CLEO 94) (Anaheim, USA, May 1994). (TP-CB-079)
“Monolithic integration of low-temperature-grown GaAs and high mobility 2DEG for
ultrafast photonic circuits”, J. Allam, K. Ogawa, A. Heberle, N. Baynes, I. Ohbu and
T. Mishima, Optical Society of America Topical Meeting on Ultrafast Electronics &
Optoelectronics (Dana Point, USA, March 1995) (TP-CB-102)
“Ultrafast characterisation of parasitics in in-plane-gate field-effects transistors”, K. Ogawa,
J. Allam, N. Baynes, J. R. A. Cleaver, I. Ohbu and T. Mishima, Optical Society of America
Topical Meeting on Ultrafast Electronics & Optoelectronics (Dana Point, USA, March
1995). (TP-CB-103)
“Airbridges for slotline mode suppression in THz coplanar waveguide”, N. Baynes,
J. Allam, K. Ogawa, M. Ahmed and J. R. A. Cleaver, Optical Society of America Topical
Meeting on Ultrafast Electronics & Optoelectronics (Dana Point, USA, March 1995).
(TP-CB-104)
C40.
“Microscopic simulation of ultrafast photodetectors”, J. Allam, A. B. Walker, P. J. Briggs,
Conference on Lasers & Electro-Optics (CLEO 95) (Baltimore, USA, May 1995).
(TP-CB-112)
C41.
C42.
C43.
C44.
C45.
C46.
“Breakdown and high-field transport dynamics in LT GaAs”, J. Allam and N. Baynes, 9th
International Conference on Hot Carriers in Semiconductors (HCIS-9) (Chicago, USA, July
1995). (TP-CB-124)
“Universal relation between avalanche breakdown voltage and bandstructure in wide-gap
III-V semiconductors”, J. Allam and J. P. R. David (9th International Conference on Hot
Carriers in Semiconductors (HCIS-9) (Chicago, USA, July 1995). (TP-CB-125)
“Ultrafast sampling of a dual-gate field effect transistor”, N. Baynes, J. Allam and
J. R. A. Cleaver, 9th International Symposium on Ultrafast Process in Spectroscopy (UPS
95) (Trieste, Italy, October 1995). (TP-CB-134)
“Dynamics of trapping recombination and breakdown in LT GaAs”, J. Allam and N. Baynes
9th International Symposium on Ultrafast Process in Spectroscopy (UPS 95) (Trieste, Italy,
October 1995). (TP-CB-135)
“Universal relation between impact ionisation and bandstructure”, J. Allam, Institute of
Physics Condensed Matter and Materials Physics (CMMP 95) (Liverpool, U.K., December
1995). (TP-CB-151)
“Dynamics of trapping in LT GaAs and its effect on transport”, J. Allam and N. Baynes,
Institute of Physics Condensed Matter and Materials Physics (CMMP 95) (Liverpool, U.K.,
December 1995). (TP-CB-152)
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C47.
C48.
C49.
C50.
C51.
C52.
C53.
C54.
C55.
C56.
Jeremy Allam
April 2nd 2002
“Photonic sampling of ultrafast electronic devices: bridging the measurement gap”,
J. Allam, 1996 International Conference on Solid State Devices and Materials (SSDM 96)
(Yokohama, Japan, August 1996). (TP-CB-167) (Invited)
“Universal dependence of avalanche breakdown on bandstructure: choosing materials for
high-power devices”, J. Allam, 1996 International Conference on Solid State Devices and
Materials (SSDM 96) (Yokohama, Japan, August 1996). (TP-CB-179)
“Ultrafast processes relevant to “real” opto/electronic devices”, J. Allam, Institute of Physics
Meeting: Ultrafast Processes in Semiconductors (Edinburgh, April 1997). (TP-CB-218)
(Invited)
“Anomalous excitation intensity dependence of PL from InAs self assembled quantum
dots”, J. Motohisa, J. J. Baumberg, A. P. Heberle and J. Allam, International Workshop on
Nano Physics and Electronics (NPE 97) (Tokyo, Japan, September 1997). (TP-CB-227)
“Average energy gap dependence of avalanche breakdown in semiconductors”, J. Allam,
International Conference on Computers & Devices for Communications (CODEC 98)
(Calcutta, India, January 1998). (TP-CB-239) (Invited)
“High pressure measurements and the “universal” scaling of impact ionisation with
bandstructure”, J. Allam and A. R. Adams, 8th International Conference on High Pressure
Semiconductor Physics (HPSP-VIII) (Thessaloniki, Greece, August 1998). (TP-CB-262)
(Invited)
“Manufacturable PHEMT process for time-domain measurement of ultrafast transistors”,
C. Yuca, J. Allam, J. R. A. Cleaver and M. Missous, 6th International Workshop on High
Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO 98)
(Manchester, U.K., November 1998). (TP-CB-290) (Best Student Paper Prize)
“Influence of hot carrier dynamics on pulse propagation in semiconductor lasers”, M. Kauer,
A. P. Heberle, J. J. Baumberg, J. Allam and J. R. A. Cleaver, 11th International Conference
on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) (Kyoto, Japan, July
1999). (TP-CB-314)
“Ultrashort pulse propagation over very long distances in semiconductor lasers”, M. Kauer,
A. P. Heberle, J. R. A. Cleaver and J. Allam, 6th International Workshop on Femtosecond
Technology (FST 99) (Tsukuba, Japan, July 1999). (TP-CB-331)
"Quantitative electro-optic sampling for high-frequency characterisation of passive and
active devices”, J. Allam, C. Yuca, and J. R. A. Cleaver, 7th International Workshop on
High Performance Electron Devices for Microwave and Optoelectronic Applications
(EDMO 99) (London, U.K., November 1999). (TP-CB-359) (Invited Paper)
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