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Semiconductor Quantum Dot Using Resonance Fluorescence Spectroscopy,” E. B. Flagg, J. W.
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“Intermediate-band material based on GaAs quantum rings for solar cells,” J. Wu, D.L. Shao,
Z.H. Li, M.O. Manasreh, V.P. Kunets, Z.M. Wang, and G.J. Salamo, Appl. Phys. Lett. 95, 071908
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Min Xiao, Appl. Phys. Lett. 88, 143512 (2006).
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Performance via Greener Synthetic Chemistry,” N. Pradhan, and X. Peng, J. Am. Chem. Soc. 129,
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Nucleation and Growth Kinetics in Hierarchical Nanosyntheses of Branched ZnO Crystallites,
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“Bright and Stable Purple/Blue Emitting CdS/ZnS Core/Shell Nanocrystals Grown by Thermal
Cycling Using a Single-Source Precursor,” D.A. Chen, F. Zhao, H. Qi, M. Rutherford, and X.
Peng, Chemistry of Materials 22, 1437 (2010); and private communication NN-Labs.
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non-cadmium containing, and biocompatible,” R. Xie, K. Chen, X. Chen, and X. Peng, Nano
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“Synthesis of Cu-Doped InP Nanocrystals (d-dots) with ZnSe Diffusion Barrier as Efficient and
Color-Tunable NIR Emitters,”R. G. Xie, X. Peng, J. of the Am. Chem. Soc. 131, 10645 (2009).
Recognition of Excellence in Innovation Certificate was presented in person by the Under
Secretary of Commerce for Technology Robert Cresanti on August 7, 2007 to Prof. Xiaogong
Peng, and his company, Nanomaterials and Nanofabrication Laboratories (NN-Labs), They were
recognized for pioneering the manufacturing and application of high-quality, nanocrystals in
solution that can used in solid-state lighting, light-emitting diodes, solar cells, and biomedical
detection.
“Dislocation filtering by AlxIn1-xSb/ AlyIn1-ySb interfaces for InSb-based devices grown on
GaAs(001) substrates,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Appl. Phys. Lett. 88,
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“Reduction of micro-twin defects for high-electron-mobility InSb quantum wells,” T.D. Mishima,
M. Edirisooriya, and M.B. Santos, Appl. Phys. Lett. 91, 062106 (2007).
“Micro-twin defects in InSb/AlInSb layers grown on (001) GaAs- Application of the <-116>
directional analysis,” T.D. Mishima and M.B. Santos, Physics Procedia 3, 1373 (2010).
“Dislocation-filtering AlInSb buffer layers for InSb quantum wells—Analysis by high-tilt brightfield and dark-field TEM,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Physica E 42, 2777
(2010).
“InSb quantum well based micro-Hall devices: potential for pT-detectivity,” Vas. P. Kunets, S.
Easwaran, W. T. Black, D. Guzun, Yu. I. Mazur, and G. J. Salamo, N. Goel, T. D. Mishima, and
M. B. Santos, IEEE Transactions on Electron Devices 56, 683 (2009).
“InSb Quantum-Well Structures for Electronic Device Applications,” M. Edirisooriya, T.D.
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“Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy,”
M.C. Debnath, T.D. Mishima, M.B. Santos, K. Hossain, and O.W. Holland, J. Vac. Sci. Technol.
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“Measurement of the Dresselhaus and Rashba spin-orbit coupling via weak anti-localization in
InSb quantum wells,” A.R. Dedigama, D. Jayathilaka, S.H. Gunawardana, S.Q. Murphy, M.
Edirisooriya, N. Goel, T.D. Mishima and M.B. Santos, Springer Proceedings in Physics 119, 35
(2008).
“Current focusing in InSb heterostructures,” A.R. Dedigama, D. Deen, S.Q. Murphy, N. Goel, J.
Keay, M.B. Santos, K. Suzuki, S. Miyashita, and Y. Hirayama, Physica E 34, 647 (2006).
“Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin
Quantum Hall Ferromagnet,” H. W. Liu, K. F. Yang, T. D. Mishima, M. B. Santos, Y. Hirayama,
http://arxiv.org/abs/1002.3087
“Experimental Evidence of Nonlinear Magnetic Field Dependence of Spin Polarization in TwoDimensional Electron Systems,” K.F. Yang, H.W. Liu, T.D. Mishima, M.B. Santos, K. Nagase,
Y. Hirayama, Phys. Rev. B 82 (Rapid Comm.), 241304 (2010).
“Comprehensive doping and temperature studies of spin relaxation in InSb,” Dorel Guzun, Eric
Decuir Jr., Vasyl Kunets, Yu Mazur, Gregory J. Salamo, P.A.R. Dilhani Jayathilaka, Sheena
Murphy, Tetsuya Mishima, and Michael Santos, Appl. Phys. Lett. 95, 241903 (2009).
“Intersubband magneto-absorption by electrons in InSb quantum wells,” M.B. Santos, S.D. Lowe,
T.D. Mishima, R.E. Doezema, L.C. Tung, Y-J. Wang, Proceedings of the 30th International
Conference on the Physics of Semiconductors, in press.
“Numerical study of the topological Anderson insulator in HgTe/CdTe quantum wells,” H. Jiang,
L. Wang, Q.F. Sun, and X.C. Xie, Phys. Rev. B 80, 165316 (2009).
“Topological Insulator: A New Quantized Spin Hall Resistance Robust to Dephasing,” H. Jiang,
S.G. Cheng, Q.F. Sun, and X.C. Xie, Phys. Rev. Lett. 103, 036803 (2009).
“In0.53Ga0.47As based MOS capacitors with ALD ZrO2 gate oxide demonstrating low gate leakage
current and equivalent oxide thickness less than 1 nm,” Niti Goel, Prashant Majhi, H. Wen,
Michael Santos, Serge Oktyabrsky, Vadim Tokranov, Rama Kambhampati, Richard Moore, Feng
Zhu, Jack Lee, Wilman Tsai, Applied Physics Letters 92, 222904 (2008).
“A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb
substrates using a germanium interfacial passivation layer,” Hyoung-Sub Kim, I. Ok, M. Zhang,
F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe,
and M. B. Santos, Applied Physics Letters 93, 062111 (2008).
“A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon
interface passivation layer,” Feng Zhu, Han Zhao, I. Ok, H. S. Kim, J. Yum, Jack C. Lee, Niti
Goel, W. Tsai, C.K. Gaspe, and M.B. Santos, Appl. Phys. Lett. 94, 013511 (2009).
“InAs-based interband cascade lasers near 6 mm,” Zhaobing Tian and Rui Q. Yang, Tetsuya D.
Mishima, Michael B. Santos, Robert T. Hinkey, Mark E. Curtis, and Matthew B. Johnson,
Electronics Letters 45, 48 (2009).
“Plasmon-waveguide interband cascade lasers near 7.5 mm,” Z. Tian, R.Q. Yang, T. D. Mishima,
M.B. Santos, and M.B. Johnson, Photonics Technology Letters 21, 1588 (2009).
“Interband Cascade Photovoltaic Devices,” Rui Q. Yang, Zhaobing Tian, J.F. Klem, Tetsuya D.
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“A new in-situ surface treatment during MBE-grown PbSe on CaF2/Si(111) heterostructure,” D.
Li, J. Ma, S. Mukherjee, B. Gang, F. Zhao, S. L. Elizondo and Z. Shi, J. Cryst. Growth 311,
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“Influence of oxygen passivation on optical and electrical properties of PbSe thin films,” F. Zhao,
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“Nanomechanical properties of a Ni nanodot-patterned surface,” H. Wang, M. Zou, P.R. Larson,
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Larson, K.L. Hobbs, M.B. Johnson, and O.K. Awitor, Tribology Letters 24, 137 (2006).
“Adhesion and Friction Properties of Micro/nano-engineered Superhydrophobic/Hydrophobic
Surfaces,” Y. Song, R. Premachandran Nair, M. Zou, and Y.A. Wang, Thin Solid Films 518, 3801
(2010).
“Single-molecule protein unfolding in solid state nanopores,” D. Talaga and J. Li, J. Am. Chem.
Soc. 131, 9287 (2009).
“Electrical Characterization of Protein Molecules by a Solid-State Nanopore,” D. Fologea, B.
Ledden, D.S. McNabb, and J. Li, Appl. Phys. Lett. 91, 053901 (2007).
“Single Flat Gold Nanoparticle Microscopy and Spectroscopy,” W.D. Tennyson, C.E. Allen, D.R.
Freno, D.H. Dahanayaka, and L.A. Bumm, Microscopy and Microanalysis, 14, 22 (2008).
“Tailored polymer–metal fractal nanocomposites: an approach to highly active surface enhanced
Raman scattering substrates,” A. Biswas, I. S Bayer, D. H Dahanayaka, L. A Bumm, Z. Li, F.
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